Flux of beta-Ga2O3 crystal and preparation method of single crystal X-ray detector

Abstract

The invention relates to the technical field of beta-Ga2O3 crystal material growth, in particular to a fluxing agent of a beta-Ga2O3 crystal and a preparation method of a single crystal X-ray detector of the fluxing agent. A fluxing agent for growing the beta-Ga2O3 crystal comprises tellurium oxide and divalent alkaline earth metal carbonate. Uniformly mixing gallium oxide and a fluxing agent to obtain a mixed material; transferring the mixed material into a crystal growth furnace, and heating to melt the mixed material to obtain a melt; and cooling the melt to 0.5-3 DEG C above the saturation point temperature, putting a seed crystal into the melt, cooling to enable the crystal to grow, taking out the crystal after the growth is finished, and cooling to room temperature to obtain the beta-Ga2O3 crystal. The fluxing agent provided by the invention does not contain toxic components such as lead, fluorine and the like, the crystal growth temperature range of the fluxing agent is approximately 780-850 DEG C, the growth temperature of the crystal is effectively reduced, the volatilization of a melt at a high temperature is reduced, the deviation and viscosity of solution components are reduced, the corrosion to a platinum crucible is reduced, and the beta-Ga2O3 crystal with high quality and large size is easy to obtain.

Description

Technical Field

[0001] This invention provides β Flux for Ga2O3 crystal growth and a crystal growth method based on this flux system, and based on this... β - An X-ray detector based on Ga2O3 single crystal and its preparation method belongs to the fields of crystal material growth technology and X-ray detection technology. Background Technology

[0002] Semiconductor materials are the core foundation of modern electronic information technology, and their research and development are of paramount importance. With the rapid development of information technology, semiconductor materials play an irreplaceable role in integrated circuits, communications, detection, and new energy fields. In recent years, X-ray detectors have found important and widespread applications in industrial non-destructive testing, security inspection, medical testing, scientific research, and space exploration. Based on the photoelectric conversion process, they can be divided into direct-type semiconductors and indirect-type semiconductors. In direct-type X-ray detectors, the photoelectric conversion layer directly converts X-rays into electrical signals, achieving better spatial resolution and lower detection limits. Semiconductor X-ray detectors belong to the direct-type detector category. Excellent semiconductor X-ray detectors require materials that simultaneously possess high light absorption coefficients, high carrier mobility lifetimes, and high electrical conductivity. μτ High resistivity, suitable band gap, stable physical and chemical properties, and excellent crystal growth habits enable X-ray detection materials to achieve high sensitivity and low detection limits, thereby reducing radiation-related health risks during medical examinations. Currently, common direct X-ray detection materials such as CdZnTe and perovskites suffer from various defects or problems during growth. Therefore, finding X-ray detection materials with the aforementioned comprehensive properties has become an important direction in this field.

[0003] β Ga₂O₃ is a monoclinic, ultra-wide bandgap semiconductor. As a fourth-generation semiconductor, compared to third-generation semiconductors such as SiC and GaN, it possesses higher breakdown electric field strength, higher thermal conductivity, lower dielectric constant, and shorter absorption cutoff edge and wider bandgap. These properties enable... β Ga2O3 has become a preferred material for optical communication, photoelectric detection, and power devices in the deep ultraviolet region. It can also be used to fabricate high-voltage, high-power, and low-loss power devices, making it one of the most sought-after semiconductor materials currently available and attracting widespread attention from the domestic and international semiconductor and X-ray detection fields. However, high-quality, large-size... β The growth of Ga2O3 single crystals has always been a key bottleneck restricting its industrialization.

[0004] β Ga₂O₃ crystals have an extremely high melting point, reaching 1800℃, and are a homogeneous molten compound. Currently, large-size...β The growth of Ga2O3 single crystals mainly relies on high-temperature melt methods, such as the Czochralski method, Bridgman method, guided-mode method, and optical floating zone method. Although these methods can achieve the growth of large-size single crystals, they also present several problems. High-temperature melt methods are prone to raw material volatilization during growth, resulting in uneven crystal composition. Furthermore, iridium crucibles are easily corroded at high temperatures, increasing costs and potentially introducing impurities that contaminate the crystal. In addition, the crystal growth is relatively unstable, prone to problems such as spiral growth, macroscopic defects (e.g., inclusions and cloud-like defects), and crystal coloration, severely affecting the optical and electrical properties of the crystal. These problems limit the growth of Ga2O3 single crystals. β High-quality and large-scale production of Ga2O3 single crystals.

[0005] Therefore, as early as the 1960s, people proposed using the flux method for growth. β Ga2O3 single crystal. Grown using a fluxing method. β While Ga2O3 can effectively lower the crystal growth temperature, reduce crucible wear, and decrease melt volatilization to some extent, most flux-based crystal growth methods... β The flux system for Ga2O3 crystals contains toxic components such as PbO, PbF2, and V2O5, which are not friendly to humans or the environment. Furthermore, most current flux systems still operate at growth temperatures above 1000℃, exhibiting significant high-temperature melt volatilization, leading to system segregation, unstable growth, and difficulty in growing large-size, high-quality single crystals. Additionally, some flux systems have excessively high viscosity, hindering solute transport during growth and resulting in defects such as obvious inclusions and cloud-like formations in the crystals. Therefore, exploring more suitable flux systems is crucial for achieving high-quality growth. β The growth of Ga2O3 crystals has become an urgent problem to be solved. Summary of the Invention

[0006] In view of this, the present invention provides a flux and its application in... β Applications in Ga2O3 crystal growth. The flux of this invention does not contain toxic components such as lead and fluorine. Using the flux of this invention can effectively reduce the crystal growth temperature, reduce the volatilization of gallium oxide melt at high temperatures, and minimize wear on the platinum crucible. This invention also provides a method based on... β The invention relates to a method for preparing an X-ray detector using Ga2O3 crystals, which achieves high sensitivity and a low detection limit.

[0007] To achieve the above objectives, the present invention provides the following solution: One of the technical solutions of the present invention is a flux comprising tellurium oxide and divalent alkaline earth metal carbonate.

[0008] The second technical solution of the present invention is that the above-mentioned flux is inβ Applications in Ga2O3 crystal growth.

[0009] The third technical solution of the present invention, a kind of β The Ga2O3 crystal growth method includes the following steps: Gallium oxide and the above-mentioned flux are mixed to obtain a mixture; The mixture is transferred into a crystal growth furnace and heated to melt it, yielding a molten liquid. The melt is cooled to 0.5-3°C above its saturation point. A seed crystal is then placed into the melt, and the temperature is lowered to allow the crystal to grow. After growth is complete, the crystal is removed and cooled to room temperature to obtain the desired result. β -Ga2O3 crystals.

[0010] The fourth technical solution of the present invention is based on β The method for fabricating an X-ray detector from a Ga2O3 single crystal includes the following steps: [The text abruptly ends here, likely due to an incomplete sentence or missing information.] β -Gold is sputtered onto the top surface of a Ga2O3 single crystal as the positive electrode. β -Ga₂O₃ single crystal bottom surface sputtered with metallic gold as the negative electrode, with independent thicknesses of 50-150 nm for the positive and negative electrodes, to obtain a substrate based on... β - X-ray detector using Ga2O3 single crystal.

[0011] The fifth technical solution of the present invention is a method utilizing the above-mentioned... β The fabrication method of Ga2O3 single crystal X-ray detector based on β - X-ray detector using Ga2O3 single crystal.

[0012] The present invention discloses the following technical effects: The flux provided by this invention does not contain toxic components such as lead and fluorine, and poses no potential harm to human health or the environment during crystal growth; in this system, β The relatively low growth temperature range of Ga2O3 crystals effectively reduces melt composition shifts caused by high-temperature melt volatilization, thus ensuring the stability of the crystal growth process. The low viscosity and clear, transparent nature of the tellurium oxide solution effectively improves solute transport efficiency, preventing the formation of macroscopic defects such as inclusions, which is beneficial for growing high-quality, large-size crystals. β -Ga₂O₃ single crystal; Divalent alkaline earth metal carbonates possess certain ionic activity. Adding divalent alkaline earth metal carbonates to tellurium oxide systems can, on the one hand, reduce the viscosity of the solution, increasing the solute transport efficiency; on the other hand, it can improve the system's solubility of gallium oxide. Increasing the proportion of gallium oxide raw material at a certain temperature... β The growth range of Ga2O3 crystals is widened, enabling the growth of larger crystals. β-Ga2O3 crystals. In addition, compared with the mixed system of tellurium oxide and alkali metal carbonates, divalent alkaline earth metal carbonates have a larger ionic radius, making them less likely to enter the crystal and form impurities. Furthermore, divalent alkaline earth metal carbonates corrode platinum crucibles much less than alkali metal carbonates, effectively reducing the wear and tear on platinum crucibles.

[0013] Using the flux of the present invention β Ga2O3 crystal growth can produce millimeter-scale high-quality crystals (7×5×5mm). 3 )of β Ga₂O₃ single crystals can be made larger in size by increasing the cooling range, extending the crystal growth cycle, and precisely controlling the cooling curve. β -Ga2O3 single crystal.

[0014] Using the flux of the present invention β Ga2O3 crystal growth can effectively reduce the crystal growth temperature, with a growth temperature range of approximately 780-850℃. It also features a wide crystallization range and less volatilization within the corresponding temperature range. β -Ga2O3 single crystals are a single precipitate phase, and the solution is clear and transparent at high temperatures, making it easy to observe the crystal growth.

[0015] Utilizing the present invention β X-ray detectors fabricated from Ga2O3 single crystals use metallic Au as both the positive and negative electrodes, effectively improving performance, simplifying device fabrication processes, and reducing costs.

[0016] Utilizing the present invention β Ga2O3 single crystals have good crystallinity and regular morphology, and possess advantages such as high X-ray absorption coefficient, suitable band gap, high resistivity, high carrier mobility lifetime product, low dark current drift and better thermal stability. The resulting X-ray detectors can achieve high sensitivity, low detection limit and excellent stability. Attached Figure Description

[0017] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0018] Figure 1 Prepared as in Example 1 β - Photograph of the appearance of Ga2O3 single crystal.

[0019] Figure 2 Prepared as in Example 1β X-ray diffraction pattern of Ga2O3 single crystal powder and theoretical calculation results.

[0020] Figure 3 Prepared based on Example 1 β -Schematic diagram of the structure of an X-ray detector made of Ga2O3 single crystal.

[0021] Figure 4 Prepared as in Example 1 β X-ray absorption coefficient of Ga2O3 single crystal.

[0022] Figure 5 The preparation based on Example 1 β Photocurrent curves of an X-ray detector made of Ga2O3 single crystal at different doses.

[0023] Figure 6 The preparation based on Example 1 β - Sensitivity test diagram of an X-ray detector made of Ga2O3 single crystal.

[0024] Figure 7 The preparation based on Example 1 β -Detection limit test diagram of Ga2O3 single crystal X-ray detector.

[0025] Figure 8 The preparation based on Example 1 β -Dark current drift curve of an X-ray detector made of Ga2O3 single crystal. Detailed Implementation

[0026] Various exemplary embodiments of the present invention will now be described in detail. This detailed description should not be considered as a limitation of the present invention, but rather as a more detailed description of certain aspects, features, and embodiments of the present invention.

[0027] It should be understood that the terminology used in this invention is merely for describing particular embodiments and is not intended to limit the invention. Furthermore, with respect to numerical ranges in this invention, it should be understood that each intermediate value between the upper and lower limits of the range is also specifically disclosed. Any stated value or intermediate value within a stated range, as well as each smaller range between any other stated value or intermediate value within said range, is also included in this invention. The upper and lower limits of these smaller ranges may be independently included or excluded from the range.

[0028] Unless otherwise stated, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art. While only preferred methods and materials have been described herein, any methods and materials similar to or equivalent to those described herein may be used in the implementation or testing of this invention.

[0029] Various modifications and variations can be made to the specific embodiments described in this specification without departing from the scope or spirit of the invention, as will be apparent to those skilled in the art. Other embodiments derived from this specification will also be apparent to those skilled in the art. This specification and embodiments are merely exemplary.

[0030] The terms “include,” “including,” “have,” “contain,” etc., used in this article are all open-ended terms, meaning that they include but are not limited to.

[0031] The first aspect of the present invention provides a flux comprising tellurium oxide and divalent alkaline earth metal carbonate.

[0032] In a preferred embodiment of the present invention, the molar ratio of the tellurium oxide to the divalent alkaline earth metal carbonate is (3.2~6.7):(0.2~1.1).

[0033] In this invention, excessive telluride oxide makes crystal precipitation difficult, while insufficient telluride oxide leads to an excessively high melting point and severe volatilization; excessive divalent alkaline earth metal carbonates increase the melting point, while insufficient telluride oxides increase the melt viscosity, making crystal precipitation difficult. Therefore, this invention preferably limits the molar ratio of telluride oxide to the divalent alkaline earth metal carbonate to the above-mentioned range.

[0034] In a preferred embodiment of the present invention, the tellurium oxide is tellurium dioxide and / or tellurium trioxide; the divalent alkaline earth metal carbonate is one or two of magnesium carbonate, calcium carbonate, barium carbonate and strontium carbonate.

[0035] The second aspect of the present invention provides the above-described flux in β Applications in Ga2O3 crystal growth.

[0036] The third aspect of the present invention provides β The Ga2O3 crystal growth method includes the following steps: Gallium oxide and the above-mentioned flux are mixed to obtain a mixture; The mixture is transferred into a crystal growth furnace and heated to melt it, yielding a molten liquid. The melt is cooled to 0.5-3°C above its saturation point. A seed crystal is then placed into the melt, and the temperature is lowered to allow the crystal to grow. After growth is complete, the crystal is removed and cooled to room temperature to obtain the desired crystal. β -Ga2O3 crystals.

[0037] In a preferred embodiment of the present invention, the molar ratio of gallium oxide to tellurium oxide is 1:3.2 to 6.7.

[0038] In a preferred embodiment of the present invention, the heating rate for melting the mixture is 50~150℃ h.-1 The temperature at which the mixture is heated to melt is 870℃~980℃; after the mixture is heated to melt, the process also includes placing a platinum stirring paddle and stirring at 10~50 rpm for 48 hours to make the melt uniform.

[0039] In a preferred embodiment of the present invention, the saturation point temperature is 780~850℃; in some embodiments of the present invention, the saturation point temperature of the melt is determined by using a seed crystal contact method. The present invention does not impose any particular limitation on the cooling rate of the melt to 0.5~3°C above the saturation point temperature, and adopts the cooling rate commonly used by those skilled in the art.

[0040] In a preferred embodiment of the present invention, the seed crystal is obtained by submerging a platinum rod in the molten metal and rotating it (rotation speed 10~50 rpm), then cooling it (cooling rate 0.1~2℃ / d, cooling for 2~3 days) to induce spontaneous crystallization on the platinum rod.

[0041] In a preferred embodiment of the present invention, the cooling rate for crystal growth is 0.1~2℃ / d, and the temperature is reduced to 2~20℃ below the saturation point.

[0042] In a preferred embodiment of the present invention, the cooling rate to room temperature is 100~200℃ / d.

[0043] The fourth aspect of the present invention provides a method based on β The method for fabricating an X-ray detector from a Ga2O3 single crystal includes the following steps: [The text abruptly ends here, likely due to an incomplete sentence or missing information.] β -Gold is sputtered onto the top surface of a Ga2O3 single crystal as the positive electrode. β -Ga₂O₃ single crystal bottom surface sputtered with metallic gold as the negative electrode, with independent thicknesses of 50-150 nm for the positive and negative electrodes, to obtain a substrate based on... β - X-ray detector using Ga2O3 single crystal.

[0044] In a preferred embodiment of the present invention, before preparing the X-ray detector, first... β The Ga₂O₃ single crystal was oriented using an X-ray orientation instrument, followed by crystal cutting at a speed of 0.1 mm / h. Finally, the cut crystal was... β The Ga2O3 wafer was polished using the following process: First, it was coarsely polished by hand for 10 minutes using 1000-grit sandpaper, then finely polished by hand for 15 minutes using 7000-grit sandpaper, and finally polished for 10 minutes using microfiber cloth as a polishing pad, 0.05μm Al2O3 polishing powder and 0.5g anhydrous ethanol as polishing liquid.

[0045] The fifth aspect of the present invention provides an X-ray detector prepared according to the preparation method described above.

[0046] The technical solutions provided by the present invention will be described in detail below with reference to the embodiments, but they should not be construed as limiting the scope of protection of the present invention.

[0047] Unless otherwise specified, the technical solutions described in this invention are all conventional solutions in the field, and the reagents or raw materials used are all purchased from commercial channels or are publicly available unless otherwise specified.

[0048] The gallium oxide powder, tellurium oxide powder, and divalent alkaline earth metal carbonate powder used in the embodiments of the present invention have a purity of 99.99%, 99.99%, 99.99%, and 99.99%, respectively.

[0049] Example 1 (1) β Preparation of Ga2O3 single crystals: According to molar ratio β -Ga₂O₃∶Tellium dioxide∶Calcium carbonate = 1∶3.8∶0.2 Weigh gallium oxide powder, tellurium dioxide powder, and calcium carbonate powder and grind them thoroughly in an agate mortar for 1 hour to obtain a homogeneous mixture. Weigh 120g of the mixture and place it in a platinum crucible with a volume of Φ40mm×40mm. Place the platinum crucible containing the mixture in the center of a molten salt single crystal growth furnace heated by a resistance wire and slowly raise the temperature from room temperature to 980℃ for 10 hours. After the mixture has completely melted, insert a platinum stirring paddle at this temperature and stir continuously at 50rpm for 48 hours to obtain a homogeneous high-temperature melt. Remove the platinum stirring paddle. By inserting a platinum rod into the melt and rotating it (rotation speed 50rpm), and cooling it (cooling rate 50℃ / d, cooling for 3 days), spontaneous crystallization is induced on the platinum rod to obtain a seed crystal.

[0050] The saturation point temperature of the melt was determined using a seed crystal contact method. Regularly shaped, clean, transparent, and crack-free grains were selected as seed crystals. At a temperature close to but above the saturation point, the spontaneously crystallized seed crystal was lowered 0.5 mm below the melt surface for 12 hours, after which it was removed. The state of the seed crystal was observed. If the seed crystal melted, the melt had not yet reached the saturation point temperature and was in an unsaturated state; if the seed crystal grew, the melt was in a supersaturated state; if the seed crystal showed no significant change, this was the saturation point temperature of the melt. The temperature was repeatedly adjusted and the saturation point was tested, ultimately achieving an accuracy of within 1°C. The tested saturation point temperature was 820°C.

[0051] The melt temperature is lowered to within 0.5-3℃ above the saturation point. A seed crystal is lowered 0.5mm below the melt. The seed crystal rod is set to 50 rpm, accelerating for 10 seconds, running for 40 seconds, pausing for 10 seconds, and then cooling at a rate of 1℃ / day until the temperature reaches 2-20℃ below the saturation point, allowing the crystal to grow slowly. After crystal growth is complete, the platinum rod is removed, lifting the crystal 2cm above the liquid surface. The crystal is then cooled to room temperature at a rate of 200℃ / day. The final result is... β -Ga2O3 crystals ( Figure 1 ). Test its X-ray diffraction pattern, and β - The theoretical calculation results for Ga2O3 crystals are consistent. Figure 2 ), proving that β -Ga2O3 crystals.

[0052] (2) Based on β Fabrication of X-ray detectors from Ga2O3 single crystals: Select β -On the upper and lower corresponding planes of the Ga2O3 single crystal (001) wafer, Au electrodes are deposited on both sides by sputtering (the parameters of the sputtered electrode deposition are: vacuum degree: 8×10 -2 (Pa, current: 20mA, sputtering time: 5min) were used as the positive and negative electrodes, respectively, with thicknesses of 100nm; the resulting structure was Au / β -Ga2O3 single crystal / Au X-ray detector (such as Ga2O3 single crystal / Au) Figure 3 (As shown).

[0053] Figure 1 Prepared as in Example 1 β - Photograph of the appearance of a single Ga2O3 crystal. (Source: [Insert Source Here]) Figure 1 It can be seen that the crystal size is 7*5*5mm. 3 The quality is good, with no obvious cracks or defects and no inclusions.

[0054] Figure 2 Prepared as in Example 1 β X-ray diffraction pattern of Ga2O3 single crystal powder and theoretical calculation results. Figure 2 It can be seen that the product prepared in Example 1 β -Test results of Ga2O3 single crystal and β The results are consistent with theoretical calculations for Ga2O3 crystals.

[0055] Figure 3 Prepared as in Example 1 β -A schematic diagram of the structure of a Ga2O3 single-crystal X-ray detector, from Figure 3 It can be seen that the structure of the X-ray detector is Au / β -Ga2O3 single crystal / Au.

[0056] Figure 4 Prepared as in Example 1 β The X-ray absorption coefficient of Ga₂O₃ single crystal is given by... Figure 4 It can be seen that β -Ga2O3 has a high X-ray absorption coefficient.

[0057] Figure 5 The preparation based on Example 1 β The photocurrent curves of a Ga2O3 single-crystal X-ray detector at different doses are obtained from... Figure 5 It can be seen that, based on β The photocurrent of the Ga2O3 single crystal X-ray detector tends to increase with the increase of X-ray dose rate.

[0058] Figure 6 The preparation based on Example 1 β The sensitivity of a Ga2O3 single-crystal X-ray detector at X-ray energies is determined by... Figure 6 It can be seen that, based on β The sensitivity of the X-ray detector based on Ga2O3 single crystal is 534 μC Gy. air -1 cm -2 .

[0059] Figure 7 The preparation based on Example 1 β The detection limit of an X-ray detector made of Ga2O3 single crystal is determined by... Figure 7 It can be seen that, based on β The lowest detection limit for an X-ray detector based on a Ga2O3 single crystal is 140.02 nGy. air s -1 .

[0060] Figure 8 The preparation based on Example 1 β The dark current drift curve of an X-ray detector made of Ga2O3 single crystal is obtained from... Figure 7 It can be seen that, based on β The dark current drift of the Ga2O3 single-crystal X-ray detector is 2.78. 10 -8 nA cm -1 s -1 V -1 .

[0061] Comparative Example 1 The only difference from Example 1 is that tellurium dioxide is replaced with an equimolar amount of calcium carbonate.

[0062] Result: Replacing tellurium dioxide with an equimolar amount of calcium carbonate prevents gallium oxide from forming a homogeneous melt with calcium carbonate, thus hindering the growth of gallium oxide crystals.

[0063] Comparative Example 2 The only difference from Example 1 is that calcium carbonate is replaced with an equimolar amount of tellurium dioxide.

[0064] Results: When calcium carbonate was replaced with an equimolar amount of tellurium dioxide, a large amount of gallium telluride crystals were more likely to precipitate in the melt, and a small amount of needle-shaped gallium oxide was precipitated. The needle-shaped gallium oxide contained a large number of cracks and was surrounded by a large amount of tellurium dioxide melt, which made the grown gallium oxide unusable.

[0065] The embodiments described above are merely preferred embodiments of the present invention and are not intended to limit the scope of the present invention. Various modifications and improvements made by those skilled in the art to the technical solutions of the present invention without departing from the spirit of the present invention should fall within the protection scope defined by the claims of the present invention.

Claims

1. A fluxing agent characterized by, The tellurium oxide and the divalent alkaline earth metal carbonate.

2. The fluxing agent of claim 1, wherein The molar ratio of the tellurium oxide to the divalent alkaline earth metal carbonate is (3.2-6.7):(0.2-1.1).

3. The fluxing agent of claim 1, wherein The tellurium oxide is tellurium dioxide and / or tellurium trioxide; and the divalent alkaline earth metal carbonate is one or two of magnesium carbonate, calcium carbonate, barium carbonate and strontium carbonate.

4. Flux according to any one of claims 1 to 3 for use in β Ga2O3 crystal growth.

5. A kind β - A Ga2O3 crystal growth method, characterized in that... The method comprises the following steps: Mixing gallium oxide and the fluxing agent of any one of claims 1-3 to obtain a mixture; Moving the mixture into a crystal growth furnace, heating and melting the mixture to obtain a melt; The melt is cooled to 0.5-3°C above the saturation point temperature, a seed crystal is lowered into the melt, the crystal is grown by cooling, and after the growth is completed, the crystal is taken out, cooled to room temperature, and the Ga2O3 crystal is obtained. β -Ga2O3 crystal.

6. The method of claim 5, wherein the method further comprises: β A method for growing a Ga2O3 crystal, characterized by: The molar ratio of the gallium oxide to the tellurium oxide is 1:3.2-6.7; The temperature increasing rate of the mixture is 50-150℃ / h -1 The temperature of the mixture is 870-980℃, and the saturation point temperature is 780-850℃.

7. The method of claim 5, wherein the method further comprises: β A method for growing a Ga2O3 crystal, characterized by: The seed crystal is obtained by lowering a platinum-gold rod into the melt and rotating, and inducing spontaneous crystallization of the crystal on the platinum-gold rod.

8. The method of claim 5, wherein the method further comprises: β A method for growing a Ga2O3 crystal, wherein the temperature is decreased The cooling rate of the crystal growth is 0.1-2 ℃ / d, and the temperature is lowered to 2-20 ℃ below the saturation point temperature; and the cooling rate to room temperature is 100-200 ℃ / d.

9. based on β A method for manufacturing an X-ray detector of Ga2O3 single crystal, characterized by, Includes the steps described in any one of claims 1 to 3. β -Gold is sputtered onto the top surface of a Ga2O3 single crystal as the positive electrode. β -Ga₂O₃ single crystal bottom surface sputtered with metallic gold as the negative electrode, with independent thicknesses of 50-150 nm for the positive and negative electrodes, to obtain a substrate based on... β - X-ray detector using Ga2O3 single crystal.

10. An X-ray detector prepared by the preparation method of claim 9.

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