A spray assembly and silicon carbide epitaxial apparatus

Abstract

The application discloses a spraying assembly and a silicon carbide epitaxial equipment. The spraying assembly comprises a gas inlet module, which comprises oppositely arranged first and second uniform gas cavities, a plurality of first gas inlets and a plurality of second gas inlets, and the first gas inlets and the second gas inlets are alternately arranged. The first gas inlets are communicated with the first uniform gas cavity, the second gas inlets are communicated with the second uniform gas cavity, the first gas inlets are provided with a plurality of first gas outlet branch pipelines, the second gas inlets are provided with a plurality of second gas outlet branch pipelines, a uniform gas module is used for mixing the gases flowing into the first and second uniform gas cavities and flowing to the gas outlet channels of a cooling module through gas outlet ends of the uniform gas module, and the gas outlet ends are partially embedded in the corresponding gas outlet channels and have gaps with the gas outlet channels. The uniform gas module has at least one gas adjusting area, which forms a gas adjusting cavity in combination with the cooling module. The gas adjusting cavity comprises a plurality of gas outlet channels, inert gas is introduced into the gas adjusting cavity and flows through the gaps.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor epitaxial equipment, in particular to a spraying assembly and a silicon carbide epitaxial equipment. BACKGROUND

[0002] The silicon carbide epitaxial equipment is an equipment integrating gas transportation, gas mixing, vacuum, high temperature, rotation and other technologies, and when running, process gases (such as carbon source gas and silicon source gas) are respectively introduced into the spraying assembly for mixing, and when performing a process, the process gases need to be uniformly introduced into a film forming module and flow to the surface side of a substrate, and a single crystal thin film is grown on the surface of the substrate.

[0003] The current spraying assembly has uneven gas mixing, and most of them do not have regional control of the introduced process gases, which affects the quality of the grown single crystal thin film when used for 6-inch or larger size substrates.

[0004] Therefore, the existing silicon carbide epitaxial equipment needs to be improved. SUMMARY

[0005] In order to overcome the above-mentioned defects, the purpose of the present application is to provide a spraying assembly and a silicon carbide epitaxial equipment, which uses a multi-layer gas uniformization module to make the mixed gas more uniform, and can improve the epitaxial doping uniformity during epitaxial growth.

[0006] In order to achieve the above purpose, the present application adopts the following technical solutions:

[0007] A spraying assembly comprises:

[0008] A gas inlet module is arranged on one side of the gas uniformization module and comprises a body having a first gas uniformization cavity and a second gas uniformization cavity arranged opposite to each other, a plurality of first gas inlet channels and a plurality of second gas inlet channels, the first gas inlet channels and the second gas inlet channels being arranged alternately, and the first gas inlet channels being connected to the first gas uniformization cavity, and the second gas inlet channels being connected to the second gas uniformization cavity;

[0009] A plurality of first gas outlet branch pipes are arranged on each of the first gas inlet channels, and the first gas outlet branch pipes connect the first gas inlet channels and the gas uniformization module; a plurality of second gas outlet branch pipes are arranged on each of the second gas inlet channels, and the second gas outlet branch pipes connect the second gas inlet channels and the gas uniformization module;

[0010] The gas uniformization module is configured to have at least one gas adjusting zone, the gas adjusting zone is connected to a gas supply part through a pipeline, and a plurality of gas outlet ends are arranged on the side away from the gas inlet module; and

[0011] The cooling module has an axially extending gas outlet channel, and has a blocking portion near the side of the uniform gas module, which surrounds part of the gas outlet channel, and which, in combination with the gas regulating zone, forms a gas regulating cavity. The gas outlet channel matches the gas outlet end one by one, and the gas outlet end is partially embedded in the corresponding gas outlet channel and has a gap with the gas outlet channel, which is used for the gas introduced through the gas regulating cavity. In this way, by controlling the amount of gas introduced through the gas regulating cavity, the amount of process gas flowing out of the corresponding gas outlet channel is adjusted, and the quality of subsequent epitaxial growth is ensured.

[0012] Preferably, the uniform gas module comprises a first uniform gas module and a second uniform gas module,

[0013] The bottom of the first uniform gas module has a plurality of first uniform gas channels arranged along the axial direction thereof;

[0014] The second uniform gas module is in the shape of a cylinder and has a bottom plate, one side of the bottom plate has a side wall, the end of the side wall has a step, the step is used to install the first uniform gas module, the bottom plate has a plurality of second uniform gas channels extending along the axial direction thereof and penetrating through the bottom plate, and the side of the bottom plate away from the first uniform gas module is provided with a plurality of hollow gas outlet ends, which are gas nozzles, and the gas nozzles match the second uniform gas channels one by one.

[0015] The orthogonal projection of the first uniform gas channel on the bottom plate of the second uniform gas module does not overlap with the second uniform gas channel.

[0016] Preferably, the sum of the flow areas of the first gas outlet branch pipes and the second gas outlet branch pipes is greater than the sum of the flow areas of the first uniform gas channels.

[0017] Preferably, the bottom plate is provided with a first gas regulating zone and a second gas regulating zone, the first gas regulating zone has a first gas regulating passage, and the second gas regulating zone has a second gas regulating passage. The first gas regulating passage and the second gas regulating passage can be collectively referred to as a passage.

[0018] Preferably, the first gas regulating passage has a plurality of first gas outlet holes, and the second gas regulating passage has a plurality of second gas outlet holes.

[0019] Preferably, the first gas regulating zone is located inside the second gas regulating zone.

[0020] Preferably, the gas nozzle is at least partially in the shape of an eight or a horn along the axial cross-section thereof.

[0021] Preferably, the first gas outlet branch pipe comprises a first sub-gas outlet branch pipe and / or a second sub-gas outlet branch pipe, the number of first sub-gas outlet branch pipes matched with each first gas inlet is the same as the number of second sub-gas outlet branch pipes, and the first sub-gas outlet branch pipes and the second sub-gas outlet branch pipes are symmetrically arranged along the axial line of the corresponding first gas inlet,

[0022] The second gas outlet manifold includes a third sub-gas outlet manifold and / or a fourth sub-gas outlet manifold, the number of the third sub-gas outlet manifold matched with each second gas inlet is the same as the number of the fourth sub-gas outlet manifold, and the third and fourth sub-gas outlet manifolds are symmetrically arranged along the corresponding second gas inlets.

[0023] Preferably, the first uniform gas cavity is provided with a first gas inlet hole connected to a gas supply through a pipeline;

[0024] The second uniform gas cavity is provided with a second gas inlet hole connected to a gas supply through a pipeline, and the first and second uniform gas cavities have the same curvature.

[0025] The embodiment of the present application provides a silicon carbide epitaxial equipment including the spray assembly as described above.

[0026] Compared with the prior art, the spray assembly provided by the present application sets the uniform gas chambers (the first uniform gas cavity or the second uniform gas cavity) corresponding to the two kinds of gases, the gas is uniformly distributed in the corresponding uniform gas chamber, then enters the gas inlet (the first gas inlet or the second gas inlet) in communication with the uniform gas chamber, and then enters the first uniform gas module through the first gas outlet manifold of the first gas inlet or the second gas outlet manifold of the second gas inlet, is uniformly mixed in the first uniform gas module, then enters the second uniform gas module through the first uniform gas channel, is uniformly distributed again, and then is uniformly distributed again through the micro-adjustment of the gas adjusting cavity, enters the film forming module for epitaxial growth. In this way, the process gas is fully mixed after 2-stage or more than 2-stage mixing, so that the epitaxial growth quality is improved. BRIEF DESCRIPTION OF DRAWINGS

[0027] The accompanying drawings are included to provide a further understanding of the technical scheme of the present application, and constitute a part of the specification, and are used together with the embodiments of the present application to explain the technical scheme of the present application, and do not constitute a limitation on the technical scheme of the present application. The shapes and sizes of the components in the drawings do not reflect the true proportions, and the purpose is only to schematically illustrate the content of the present application.

[0028] Figure 1 It is a perspective view of the epitaxial equipment of an embodiment of the present application;

[0029] Figure 2 It is Figure 1 It is a sectional view of the epitaxial equipment;

[0030] Figure 3 It is a perspective view of the spray assembly of an embodiment of the present application;

[0031] Figure 4 It is Figure 3 It is a top view of the spray assembly;

[0032] Figure 5 for Figure 4 a cross-sectional view taken along line A-A;

[0033] Figure 6 for Figure 5 a partial enlarged view taken along line a;

[0034] Figure 7 for Figure 4 a cross-sectional view taken along line B-B;

[0035] Figure 8 for Figure 3 a bottom view of the spray assembly;

[0036] Figure 9 for Figure 8 a cross-sectional isometric view taken along line C-C;

[0037] Figure 10 for a first gas uniform module of the embodiment of the present application;

[0038] Figure 11 for a second gas uniform module of the embodiment of the present application;

[0039] Figure 12 for Figure 11 a schematic view of another perspective of the second gas uniform module;

[0040] Figure 13 for a cooling module of the embodiment of the present application;

[0041] Figure 14 for Figure 13 a top view of the cooling module;

[0042] Figure 15 for Figure 14 a cross-sectional isometric view taken along line D-D;

[0043] Figure 16 for a bottom view of the cooling module of the embodiment of the present application. DETAILED DESCRIPTION

[0044] The above solutions will be further described in conjunction with specific examples. It should be understood that these examples are used to illustrate the present application and do not limit the scope of the present application. The implementation conditions used in the examples can be further adjusted according to the specific manufacturer's conditions, and the implementation conditions not mentioned are usually the conditions in the conventional experiments.

[0045] The application provides a spraying assembly and a silicon carbide epitaxial device. The spraying assembly comprises a gas inlet module arranged on one side of a gas uniformizing module. The gas inlet module comprises a body, and the body is provided with a first gas uniformizing cavity and a second gas uniformizing cavity arranged oppositely, a plurality of first gas inlets and a plurality of second gas inlets. The first gas inlets and the second gas inlets are arranged alternately, and the first gas inlets are communicated with the first gas uniformizing cavity, and the second gas inlets are communicated with the second gas uniformizing cavity. A plurality of first gas outlet branch pipes are arranged on each first gas inlet, and the first gas outlet branch pipes are communicated with the gas uniformizing module. A plurality of second gas outlet branch pipes are arranged on each second gas inlet, and the second gas outlet branch pipes are communicated with the gas uniformizing module. The gas uniformizing module is configured to have at least one gas adjusting area, the gas adjusting area is connected to a gas supply part through a pipe (a gas adjusting passage), and a plurality of gas outlets are arranged on the side of the gas uniformizing module away from the gas inlet module. The cooling module (which has a gas outlet function) has an axially extending gas outlet passage, and a blocking part is arranged on the side of the cooling module close to the gas uniformizing module. The blocking part and the gas adjusting area combine to form a gas adjusting cavity. The gas outlet passage and the gas outlet are matched one by one, and the gas outlet is partially embedded in the corresponding gas outlet passage and has a gap between the gas outlet passage. The gas adjusting cavity comprises a plurality of gas outlet passages, and the gas adjusting cavity introduces inert gas and flows through the gap. Through the design, the gas introduced into the spraying assembly is uniformly mixed in the corresponding gas uniformizing cavity, then enters the first gas inlet or the second gas inlet communicated with the gas uniformizing cavity, and then enters the gas uniformizing module, such as the first gas uniformizing module, through the first gas outlet branch pipe of the first gas inlet or the second gas outlet branch pipe of the second gas inlet. After being uniformly mixed in the first gas uniformizing module, the gas enters the second gas uniformizing module through the first gas uniformizing passage, and is uniformly mixed again. The uniformly mixed gas is introduced into the film forming module through the micro-adjustment of the gas adjusting cavity for epitaxial growth. In this way, the process gas is fully mixed after two-stage or more than two-stage mixing, and the quality of subsequent epitaxial growth is improved.

[0046] Next, the spraying assembly and the silicon carbide epitaxial device (hereinafter referred to as the epitaxial device) provided by the application will be described in combination with the drawings.

[0047] As Figure 1 shown is a three-dimensional schematic view of the epitaxial device according to an embodiment of the application, Figure 2 is a cross-sectional schematic view of the epitaxial device according to an embodiment of the application.

[0048] The silicon carbide epitaxial equipment comprises a film forming module 200, a spray assembly 100 is arranged on the top side of the film forming module 200, the spray assembly 100 is connected to a gas supply part (not shown in the figure) through a pipeline, a support assembly 400 is arranged on the bottom side in the film forming module, the support assembly 400 is opposite to the spray assembly 100, the support assembly 400 is used for placing a bearing part, a substrate is placed on the bearing part, a bottom heater (not shown in the figure) is arranged in the support assembly 400. The film forming module 200 is sequentially provided with a heat preservation part 210, a heating part 220 and a graphite cylinder 230 from outside to inside. The substrate can be a silicon substrate, a silicon carbide substrate, a sapphire substrate and a diamond substrate, etc., and the size can be 6 inches, 8 inches or 12 inches. The support assembly 400 is connected to a driving part 300 (for example, the driving shaft of the driving part 300 penetrates into the film forming module 200 to connect the support assembly 400) on the bottom side of the film forming module 200, and the support assembly 400 is driven to rotate based on the driving of the driving part 300. During epitaxial growth, the gas supply part provides process gas (for example, carbon source gas and silicon source gas) to flow to the spray assembly 100, the process gas is fully mixed and uniformly distributed in the spray assembly 100, and then is introduced into the film forming module 200 to grow a single crystal thin film (also referred to as an epitaxial layer) on the surface of the substrate. Sometimes, the process gas also comprises a doping gas, which is connected to the first uniform gas cavity or the second uniform gas cavity through a pipeline and a valve, and the pipeline connected to the carbon source gas and the silicon source gas is also provided with a valve and a valve and a flow meter, and the gas introduced is adjusted or switched through the valve.

[0049] The spray assembly comprises a gas inlet module, a uniform gas module and a cooling module. The cooling module has the function of gas outlet. The uniform gas module comprises a first uniform gas module and a second uniform gas module. During epitaxial growth, the carbon source gas and the silicon source gas are introduced into the gas inlet module respectively, enter the corresponding uniform gas cavities (for example, the carbon source gas enters the first uniform gas cavity, and the silicon source gas enters the second uniform gas cavity), pass through the gas passages communicated with the uniform gas cavities, and enter the first uniform gas module from the gas outlet branch pipes (also referred to as the gas injection holes) of the gas passages. The gas introduced into the first uniform gas module is mixed, the mixed gas passes through the first uniform gas passages at the bottom of the first uniform gas module and enters the second uniform gas module, is mixed and uniformly distributed again in the second uniform gas module, and the gas uniformly distributed again passes through the gas adjusting cavities (i.e. the partition control) to be cooled and then flows out to the film forming module for epitaxial growth. In this way, the process gas is fully mixed after two-stage mixing to improve the epitaxial growth quality. In this embodiment, the total flow area of the gas injection holes of the gas inlet module is greater than the total flow area of the first uniform gas passages of the first uniform gas module, and the total flow area of the first uniform gas passages is greater than the total flow area of the second uniform gas passages of the second uniform gas module.

[0050] In one embodiment, the gas, after being mixed and homogenized by the second gas homogenizing module, flows through the third gas homogenizing module. The gas is then fine-tuned by a gas regulating chamber (i.e., zone control) formed by the coordinated combination of the gas regulating zone in the third gas homogenizing module and the blocking part on the cooling module. The fine-tuned gas is cooled and then flows out into the film-forming module for epitaxial growth. This design ensures that the gas is thoroughly mixed after three stages (or, in other embodiments, a fourth gas homogenizing module) or more, thereby improving the quality of epitaxial growth. In this embodiment, the total flow area of ​​the jet holes in the inlet module (i.e., the sum of the flow areas of the first and second outlet manifolds) is greater than the sum of the flow areas of the first gas homogenizing channel in the first gas homogenizing module, which is greater than the sum of the flow areas of the second gas homogenizing channel in the second gas homogenizing module.

[0051] Next, combine Figures 3-16 This application describes the spray assembly proposed in this application.

[0052] like Figure 3 The figure shown is a perspective view of a spray assembly according to an embodiment of this application.

[0053] The spray assembly 100 includes an air inlet module 110, an air distribution module, and a cooling module 140. The spray assembly 100 is provided with a temperature measuring hole 150, at which a temperature measuring device (not shown) is installed. This temperature measuring device is used to measure the temperature of the substrate. The cooling module 140 also has an air outlet function.

[0054] The intake module 110 is disposed on one side of the air distribution module, and the cooling module 140 is disposed on the side of the air distribution module away from the intake module 110. In this embodiment, the intake module, air distribution module, and cooling module are coaxially arranged.

[0055] The air intake module 110 includes a body 110a, which is disc-shaped. A first air distribution chamber 112 and a second air distribution chamber 114 are disposed on the body 110a. The first air distribution chamber 112 has a first air inlet 111, which is connected to a gas supply unit (not shown) via a pipeline. The second air distribution chamber 114 has a second air inlet 113, which is also connected to the gas supply unit (not shown) via a pipeline. The first air distribution chamber 112 and the second air distribution chamber 114 are arranged opposite to each other. The air intake module 110 also has a temperature measuring hole 150 extending along its axial direction. In this embodiment, the first air inlet 111 and the second air inlet 113 are located on the centerline of the air intake module 110 and are arranged opposite to each other. Preferably, carbon source gas can be introduced through the first air inlet, and silicon source gas can be introduced through the second air inlet. In this embodiment, the introduced carbon source gas and silicon source gas are mixed in the gas homogenization module.

[0056] The first uniform gas cavity 112 and the second uniform gas cavity 114 each have an arc shape (e.g., C-shaped). Preferably, the first uniform gas cavity 112 and the second uniform gas cavity 114 have the same arc shape. Preferably, the first uniform gas cavity 112 and the second uniform gas cavity 114 have the same arc shape as the arc shape (curvature) of the body 110a.

[0057] The body 110a is provided with a plurality of first gas inlets 116 and a plurality of second gas inlets 115. One end of each of the first gas inlets 116 is connected to the first uniform gas cavity 112 (the other end is not connected to the second uniform gas cavity). One end of each of the second gas inlets 115 is connected to the second uniform gas cavity 114 (the other end is not connected to the first uniform gas cavity). The first gas inlets 116 and the second gas inlets 115 are arranged alternately on the body 110a (in the direction perpendicular to the axis of the body 110a). Preferably, the first gas inlets 116 and the second gas inlets 115 are symmetrically arranged. Preferably, the number of first gas inlets 116 is the same as the number of second gas inlets 115.

[0058] Along the axial direction of each first gas inlet 116, a plurality of first gas outlet branch pipes (extending to the first side 110a1 of the body 110a) are arranged radially along the first gas inlet 116. The first gas outlet branch pipes connect the first gas inlet to the uniform gas module. In this embodiment, the first gas outlet branch pipes include first sub-gas outlet branch pipes 1161 and second sub-gas outlet branch pipes 1162. The number of first sub-gas outlet branch pipes 1161 is the same as the number of second sub-gas outlet branch pipes 1162 on the first gas inlet 116, and they are symmetrically arranged along the corresponding first gas inlet 116.

[0059] Along the axial direction of each second gas inlet 115, a plurality of second gas outlet branch pipes (extending to the first side 110a1 of the body 110a) are arranged radially along the second gas inlet 115. The second gas outlet branch pipes connect the second gas inlet 115 to the uniform gas module. In this embodiment, the second gas outlet branch pipes include third sub-gas outlet branch pipes 1151 and fourth sub-gas outlet branch pipes 1152. The number of third sub-gas outlet branch pipes 1151 is the same as the number of fourth sub-gas outlet branch pipes 1152 on the second gas inlet, and they are symmetrically arranged along the corresponding second gas inlet 115. This design introduces carbon source gas through the first gas inlet, flows into the first gas inlet, and flows out through the first sub-gas outlet branch pipe and / or the second sub-gas outlet branch pipe, introduces silicon source gas through the second gas inlet, and flows into the second gas inlet and flows out through the third sub-gas outlet branch pipe and / or the fourth sub-gas outlet branch pipe, and starts mixing at the outlet. In this embodiment, the introduced carbon source gas and silicon source gas are mixed and uniformly distributed in the spray assembly (unlike the current method of mixing carbon source gas and silicon source gas before entering the spray assembly, and then uniformly distributing them in the spray assembly).

[0060] The gas uniformity module comprises a first gas uniformity module 120 and a second gas uniformity module 130.

[0061] The first gas uniformity module 120 is installed on the second gas uniformity module 130. The bottom of the first gas uniformity module 120 is provided with a plurality of first gas uniformity channels 121 extending along the axis thereof and penetrating through the bottom. One side of the bottom of the first gas uniformity module 120 is provided with at least one first temperature measurement channel 122, which is hollow along the axis and is in communication with the temperature measurement hole 150.

[0062] The second gas uniformity module 130 is in the shape of a cylinder and has a bottom plate 132. One side of the bottom plate 132 is provided with a side wall 131, and the end of the side wall 131 is provided with a step 131a, which is used to install the first gas uniformity module 120. The side of the bottom plate 132 away from the side wall 131 is provided with a gas nozzle 134, and the bottom plate 132 is provided with a plurality of second gas uniformity channels 133 extending along the axis thereof and penetrating through the bottom plate 132 and the gas nozzle 134. The gas nozzle 134 is matched with the second gas uniformity channels 133. The cross section of the gas nozzle 134 along the axis thereof is at least partially in the shape of an eight character or a trumpet. The gas nozzle 134 has an end 134a, and the cross section of the end 134a is in the shape of an eight character or a trumpet. One side of the bottom plate 132 of the second gas uniformity module 130 is provided with at least one second temperature measurement channel 137, which is hollow along the axis and is in communication with the corresponding first temperature measurement channel 122 and the temperature measurement hole 150.

[0063] The bottom plate 132 is provided with a first gas adjustment area and a second gas adjustment area, which are respectively in communication with a gas supply part (which supplies inert gas) through a gas adjustment passage. The first gas adjustment area is provided with a first gas adjustment passage, and the second gas adjustment area is provided with a second gas adjustment passage. The first gas adjustment passage is used to communicate the cooling module with the first gas adjustment area, and the second gas adjustment passage is used to communicate the cooling module with the second gas adjustment area. The first gas adjustment passage comprises a first adjustment flow channel, and the second gas adjustment passage comprises a second adjustment flow channel. In the embodiment, the bottom plate is provided with two gas adjustment areas, i.e. the first gas adjustment area and the second gas adjustment area. In other embodiments, the number of gas adjustment areas is not limited, and there can be three or four gas adjustment areas.

[0064] In an embodiment, the bottom plate 132 is provided with a first adjusting flow channel 135 and a second adjusting flow channel 136. The first adjusting flow channel 135 combines to form a first air adjusting area in the middle of the bottom plate 132. The first adjusting flow channel 135 is connected to the first adjusting flow channel air inlet 131b which is connected to the air source through a pipeline. Preferably, a flow valve is arranged on the pipeline to adjust the flow. The first adjusting flow channel 135 is provided with a plurality of first air outlets 135a which are preferably uniformly distributed along the first adjusting flow channel 135. The second adjusting flow channel 136 combines to form a second air adjusting area outside the first air adjusting area. The second adjusting flow channel is connected to the second adjusting flow channel air inlet 131c which is connected to the air source through a pipeline. Preferably, a flow valve is arranged on the pipeline to adjust the flow. The second adjusting flow channel 136 is provided with a plurality of second air outlets 136a which are preferably uniformly distributed along the second adjusting flow channel 136.

[0065] The cooling module 140 includes a body 140a which is provided with a plurality of air outlet channels 141 extending along the axial direction and penetrating through the body. The air outlet channels 141 are matched with the air nozzles 134, and the cross section of the air outlet channels 141 is at least partially in the shape of an eight character or a trumpet. After the cooling module 140 is combined with the second air uniformizing module 130, the air nozzles 134 are at least partially embedded in the air outlet channels 141, and there is a gap between the air nozzles 134 and the air outlet channels 141 (for example, the air nozzles 134 are at least partially embedded in the air inlet sections 141a of the air outlet channels 141, and there is a gap between the air nozzles 134 and the air inlet sections 141a). The air outlet channels 141 include air inlet sections 141a and air outlet sections 141b. The mixed gas flows out of the air outlet sections of the air outlet channels and flows to the bottom side of the film forming module. The body 140a of the cooling module 140 is provided with a cooling flow channel 143. Preferably, the cooling flow channel 143 includes a first cooling flow channel 143a and a second cooling flow channel 143b. The first cooling flow channel 143a is provided with a water inlet 143a1 and a water outlet 143a2. The second cooling flow channel 143b is provided with a water inlet 143b1 and a water outlet 143b2.

[0066] One side of the body 140a of the cooling module 140 has a blocking portion 142 which is enclosed in a quadrangle, and after the cooling module 140 is combined with the second uniform gas module 130, the blocking portion 142 is between the first and second conditioning zones, i.e. the orthographic projection of the first conditioning zone on the body of the cooling module is located within the quadrangle enclosed by the blocking portion 142. Through such design, after the cooling module is combined with the second uniform gas module, the blocking portion and the first / second conditioning zone combine to form a conditioning cavity, by adjusting the amount of intake gas (inert gas) of the first and second conditioning zones, and further adjusting the amount of intake gas in the corresponding conditioning cavity, the content / proportion of the process gas in the inner and outer regions of the blocking portion can be adjusted (e.g. the carbon-silicon ratio of the process gas introduced into the inner region of the blocking portion is greater than that of the process gas introduced into the outer region of the blocking portion), at this time, when the spray assembly supplies process gas, it is equivalent to having two independent gas supply regions, and the composition (e.g. carbon-silicon ratio) of the process gas in the corresponding region can be controlled independently. In this way, the process gas supplied by the spray assembly is more uniform, and the epitaxial quality and doping uniformity can be improved during epitaxial growth. In the axial direction of the cooling module 140, the blocking portion 142 does not protrude from the body 140a.

[0067] Process gases (such as carbon source gas and silicon source gas) are introduced into the intake module 110. They begin to mix at the outlet of the first or second outlet manifold of the intake module 110 and are uniformly mixed in the first gas equalization module 120. After being uniformly mixed, they flow from the first gas equalization channel 121 of the first gas equalization module 120 into the second gas equalization module 130. In the second gas equalization module 130, the process gases are mixed again (the gases are uniformly mixed) and flow through the second gas equalization channel 133 of the second gas equalization module 130 and the matching nozzle 134 to the outlet channel 141 of the cooling module 140. There is a gap between the nozzle 134 and the intake section 141a of the outlet channel 141. Inert gas flows through this gap. By controlling the gas pressure P2 and the flow rate, the pressure P4 at the nozzle can be changed, thereby changing the gas flow ratio in this area and achieving the purpose of adjusting the process. In this embodiment, the air supply of the entire spray assembly is divided into two regions (i.e., the area enclosed by the blocking part 142 and the outside, region one M1 and region two M2). The control gas is introduced into the process gas through the first adjusting flow channel air inlet 131b and the second adjusting flow channel air inlet 131c with inert gas of different pressure and flow rate to control the process gas. P1 is the process gas pressure (after gas equalization by the gas equalization module), and P3 is the chamber pressure of the film-forming module (the bottom side of the film-forming module is connected to a vacuum device via a pipe, which is equipped with a butterfly valve. A pressure sensor is installed inside the film-forming module. The information fed back by the pressure sensor is used to control the opening of the butterfly valve to keep the chamber pressure P3 of the film-forming module constant). During the epitaxial growth process, the pressures P1 and P3 remain unchanged. By controlling the gas pressure P2 and flow rate of the gas regulating chamber, the pressure P4 at the nozzle can be changed, which changes the pressure difference between P1 and P4 in region 1 M1 and region 2 M2. This changes the flow rate of the process gas supplied to region 1 M1 and region 2 M2, thereby changing the gas supply ratio of region 1 M1 and region 2 M2 and achieving the purpose of adjusting the process gas.

[0068] The above embodiments are only for illustrating the technical concept and features of this application, and are intended to enable those skilled in the art to understand the content of this application and implement it accordingly. They should not be used to limit the scope of protection of this application. All equivalent changes or modifications made in accordance with the spirit and essence of this application should be included within the scope of protection of this application.

Claims

1. A spray assembly, characterized in that, include: An air intake module, configured on one side of an air equalization module, includes a body, on which a first air equalization chamber and a second air equalization chamber are arranged opposite to each other, a plurality of first air intake channels and a plurality of second air intake channels are arranged alternately, and the first air intake channel is connected to the first air equalization chamber, and the second air intake channel is connected to the second air equalization chamber. Each first air intake is provided with multiple first air outlet manifolds, which connect the first air intake to the air distribution module. Each second air intake is provided with multiple second air outlet manifolds, which connect the second air intake to the air distribution module. The gas equalization module is configured to have at least one gas regulating zone, which is connected to the gas supply unit via a pipeline, and has multiple gas outlets on the side away from the air inlet module; and The cooling module has an axially extending air outlet channel and a blocking part near the air distribution module. The blocking part surrounds part of the air outlet channel. The blocking part and the air regulating zone combine to form an air regulating chamber. The air outlet channel and the air outlet end are matched one by one. The air outlet end is partially embedded in the corresponding air outlet channel and has a gap between it and the air outlet channel. The gap is used for the gas introduced through the air regulating chamber.

2. The spray assembly as described in claim 1, characterized in that, The gas equalization module includes a first gas equalization module and a second gas equalization module. The bottom of the first air distribution module has multiple first air distribution channels arranged along its axial direction. The second gas equalization module is cylindrical and has a bottom plate. One side of the bottom plate has a side wall, and the end of the side wall has a step. The first gas equalization module is installed on the step. The bottom plate has a plurality of second gas equalization channels extending upward along its axis and penetrating the bottom plate. A plurality of hollow air outlets are arranged on the side of the bottom plate away from the first gas equalization module. The air outlets are air nozzles, and the air nozzles are matched and correspond to the second gas equalization channels. The orthographic projection of the first air distribution channel onto the base plate of the second air distribution module does not coincide with the second air distribution channel.

3. The spray assembly as described in claim 2, characterized in that, The sum of the flow area of ​​the first exhaust manifold and the flow area of ​​the second exhaust manifold is greater than the sum of the flow areas of the first uniform air passage.

4. The spray assembly as described in claim 2, characterized in that, The base plate is provided with a first gas regulating zone and a second gas regulating zone. The first gas regulating zone has a first gas regulating passage, and the second gas regulating zone has a second gas regulating passage.

5. The spray assembly as described in claim 4, characterized in that, The first air regulating passage has multiple first air outlets, and the second air regulating passage has multiple second air outlets.

6. The spray assembly as described in claim 4, characterized in that, The first gas regulating zone is located inside the second gas regulating zone.

7. The spray assembly as described in claim 2, characterized in that, The cross-section of the nozzle along its axial direction is at least partially figure-eight shaped or trumpet shaped.

8. The spray assembly as described in claim 1, characterized in that, The first exhaust manifold includes a first sub-exhaust manifold and / or a second sub-exhaust manifold. The number of first sub-exhaust manifolds matched with each first intake duct is the same as the number of second sub-exhaust manifolds, and they are symmetrically arranged along the axis of the corresponding first intake duct. The second exhaust manifold includes a third sub-exhaust manifold and / or a fourth sub-exhaust manifold. The number of third sub-exhaust manifolds matched with each second intake is the same as the number of fourth sub-exhaust manifolds, and they are symmetrically arranged along the corresponding second intake.

9. The spray assembly as claimed in claim 1, characterized in that, The first gas distribution chamber is provided with a first air inlet, which is connected to the gas supply unit via a pipeline; The second gas equalization chamber is provided with a second air inlet, which is connected to the gas supply unit via a pipeline, and the first gas equalization chamber and the second gas equalization chamber have the same curvature.

10. A silicon carbide epitaxial device, characterized in that, It includes a film-forming module, and the top side of the film-forming module is provided with a spraying assembly as described in any one of claims 1-9.

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