Detection method and detection system for semiconductor process

By introducing isotope labels of known concentrations into the sample and optimizing SIMS parameters, the matrix effect problem in SIMS quantitative analysis was solved, achieving highly accurate and repeatable dopant detection and ensuring reliable determination of target element concentrations.

CN121253641APending Publication Date: 2026-01-02OUYIM SEMICON EQUIP TECH (JINGJIANG) CO LTD
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Patent Information

Application Number
CN202511138000.2
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-08-14
Publication Date
2026-01-02

AI Technical Summary

Technical Problem

In existing technologies, SIMS is easily affected by the matrix effect during quantitative analysis, resulting in different signal responses of the same dopant in different matrices. The calibration process is complex and prone to measurement errors.

Method used

By introducing a known concentration of isotope labeling to the target element into the sample, the relative signal intensities of the natural isotope and the doped isotope are simultaneously detected using SIMS, a response curve is constructed, and the internal calibration and parameter optimization are achieved by combining the correspondence between the signal ratio and the standard curve with an ion beam parameter optimization strategy.

Benefits of technology

It improves the accuracy and repeatability of quantitative analysis, and can accurately determine whether the signal response in different matrices belongs to the same type of dopant, ensuring the reliable determination of the target element concentration.

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Abstract

The invention relates to the technical field of semiconductor process detection, and discloses a semiconductor process detection method and system, and the method comprises the steps: carrying out the pretreatment of a semiconductor wafer, enabling the surface of the semiconductor wafer to be free of residual pollutants, and employing a chemical cleaning and drying technology to maintain the completeness of a crystal; the method comprises the following steps: selecting a plurality of isotopes which have the same chemical property as a measured target element but have obvious natural abundance difference as standard samples, and uniformly doping an isotope solution with known concentration into the plurality of standard samples; according to the method, target element isotope labels with known concentrations are introduced into a sample, then the SIMS is used for detecting the relative signal intensity of natural isotopes and doped isotopes at the same time, so that internal correction is achieved, the ionization efficiency difference caused by different matrixes is counteracted, and due to the fact that the chemical behaviors of different isotopes in the same matrix are basically consistent, the ionization efficiency is greatly improved. The matrix effect can be greatly reduced, so that the accuracy and repeatability of quantitative analysis are improved.
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