Power electronic modular power unit

Abstract

The invention provides a power electronic modular power unit, which is provided with a bus capacitor board, a strong-current half-bridge main power board, a bus copper bar, a gate drive board and an auxiliary power supply board, and is characterized in that the strong-current half-bridge main power board is designed by adopting a high-voltage silicon carbide device, so that the voltage grade of the power unit is improved; therefore, the problem that an existing power electronic modular power unit cannot be compatible with energy conversion scenes such as middle-high voltage and high power is solved.

Description

Technical Field

[0001] This application provides a modular power unit for power electronics to solve the problem that existing modular power components for power electronics are incompatible with energy conversion scenarios such as medium- and high-voltage and high-power applications. Background Technology

[0002] With the continuous development of power electronics technology, especially in applications such as electric vehicle charging, new energy grid connection, and flexible DC power transmission, it plays an important role in improving energy conversion efficiency and system intelligence.

[0003] In recent years, modular power components have gradually become an important development direction for the construction of power electronic systems in the industrial field due to their advantages such as flexible structure, easy integration, and easy maintenance. They have significantly reduced the complexity of design and manufacturing and improved the scalability and versatility of systems. However, most current modular power components are implemented using IGBT designs, and the standard voltage of IGBTs is relatively low, making modular power components unsuitable for medium- and high-voltage, high-power energy conversion scenarios. Summary of the Invention

[0004] This application provides a modular power unit based on high-voltage silicon carbide devices to solve the problem that existing modular power components cannot be compatible with energy conversion scenarios such as medium-voltage and high-power applications.

[0005] In a first aspect, this application provides a modular power electronic unit, comprising:

[0006] Bus capacitor board;

[0007] A high-voltage half-bridge main power board is arranged parallel above the bus capacitor board and fixed to the bus capacitor board by a first connecting post, forming a capacitor storage area between the bus capacitor board and the high-voltage half-bridge main power board; wherein, the high-voltage half-bridge main power board includes at least two high-voltage silicon carbide devices to achieve a DC input voltage in the range of 0 to 2.5kV and output a wide-frequency square wave voltage;

[0008] The busbar copper busbar is vertically installed on the side of the busbar capacitor board and the high-voltage half-bridge main power board, and is used to connect the positive and negative terminals between the busbar capacitor board and the high-voltage half-bridge main power board.

[0009] A gate driver board is disposed parallel above the main power board of the high-voltage half-bridge and is fixed to the main power board of the high-voltage half-bridge via a second connecting post.

[0010] An auxiliary power supply board is disposed parallel to the gate driving board above it and is fixed to the gate driving board by a third connecting post.

[0011] Optionally, the bus capacitor board includes a capacitor circuit, a discharge circuit, and a potential connection metal port; the capacitor circuit and the discharge circuit are connected in parallel, then connected to the potential connection metal port, and soldered onto the circuit board of the bus capacitor board.

[0012] Optionally, the capacitor circuit is obtained by integrating multiple thin-film capacitors in a matrix form.

[0013] In one feasible embodiment, the potential connection metal port includes a positive potential connection port and a ground potential connection port, and the two ends of the capacitor circuit are respectively connected to the bus copper bus through the positive potential connection port and the ground potential connection port.

[0014] Optionally, the discharge circuit includes a first discharge resistor and a second discharge resistor connected in series, wherein the common terminal of the first discharge resistor and the second discharge resistor is connected to the neutral terminal of the capacitor circuit, the other end of the first discharge resistor is connected to the positive potential connection port, and the other end of the second discharge resistor is connected to the ground potential connection port.

[0015] Optionally, the high-voltage half-bridge main power board also includes at least two heat sinks, a high-voltage decoupling capacitor, positive and negative interfaces, and a neutral interface;

[0016] The at least two high-voltage silicon carbide devices and the high-voltage decoupling capacitor are located on opposite sides of the circuit board of the high-voltage half-bridge main power board; the at least two high-voltage silicon carbide devices are connected in series and then connected in parallel with the high-voltage decoupling capacitor, and are soldered to the circuit board of the high-voltage half-bridge main power board; the two ends of the high-voltage decoupling capacitor are connected to the bus copper busbar through the positive and negative interfaces.

[0017] The gate driving board is disposed on the side of each of the high voltage silicon carbide devices and is connected to the gate of the corresponding high voltage silicon carbide device.

[0018] The high-voltage silicon carbide device is connected to the heat sink via a thermally conductive material.

[0019] Optionally, the gate driver board includes a driving circuit, a driving input terminal, and a driving output terminal;

[0020] The drive input terminal is connected to the output terminal of the auxiliary power supply board, and is used to convert the DC voltage output by the auxiliary power supply board into the gate voltage of the high voltage silicon carbide device.

[0021] The drive output terminal is connected to the gate of the high-voltage silicon carbide device and is used to output the gate voltage to drive the high-voltage silicon carbide device to turn on and off.

[0022] Optionally, the drive output terminal includes a drain desaturation detection terminal and a drive circuit output terminal. The drain desaturation detection terminal is connected to the drain of the high-voltage silicon carbide device, and the drive circuit output terminal is connected to the gate of the high-voltage silicon carbide device.

[0023] Optionally, the driving circuit includes a voltage measurement unit, a current measurement unit, a temperature measurement unit, an undervoltage protection unit, an overcurrent protection unit, and an optical fiber signal receiving unit. When an overvoltage, overcurrent, overtemperature, or undervoltage fault is detected, the driving circuit will pull down the gate voltage to shut down the corresponding high-voltage silicon carbide device and output an error signal to the host computer through the optical fiber signal receiving unit.

[0024] Optionally, the auxiliary power supply board is composed of a high-voltage isolated power supply.

[0025] This application brings the following beneficial effects:

[0026] By setting up a power electronic module power unit that includes a bus capacitor board, a high-voltage half-bridge main power board, a bus copper bus, a gate drive board, and an auxiliary power supply board, the high-voltage half-bridge main power board is designed with high-voltage silicon carbide devices, which realizes the improvement of the voltage level of the power unit, thereby solving the problem that the existing power electronic modular power units cannot be compatible with energy conversion scenarios such as medium and high voltage and high power.

[0027] Other features and advantages of this application will be set forth in the following description and will be apparent in part from the description or may be learned by practicing the application. The objectives and other advantages of this application are realized and obtained through the structures particularly pointed out in the description, claims and drawings.

[0028] To make the above-mentioned objectives, features and advantages of this application more apparent and understandable, preferred embodiments are described below in detail with reference to the accompanying drawings. Attached Figure Description

[0029] To more clearly illustrate the specific embodiments of this application or the technical solutions in the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this application. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0030] Figure 1 A schematic diagram of a modular power unit for power electronics provided in an embodiment of this application;

[0031] Figure 2 Another structural schematic diagram of the modular power unit for power electronics provided in this application embodiment;

[0032] Figure 3 This is another structural schematic diagram of the modular power unit for power electronics provided in the embodiments of this application.

[0033] Explanation of reference numerals in the attached figures:

[0034] 110 - Bus capacitor board; 111 - Capacitor circuit; 112 - Discharge circuit; 113 - Circuit board of bus capacitor board;

[0035] 120 - High-voltage half-bridge main power board; 121 - High-voltage silicon carbide devices; 122 - Heat sink; 123 - High-voltage decoupling capacitor; 124 - Circuit board of the high-voltage half-bridge main power board;

[0036] 130 - Busbar copper busbar;

[0037] 140 - Gate driver board;

[0038] 150-Auxiliary power supply board;

[0039] 160 - First connecting post;

[0040] 170 - Second connecting post;

[0041] 180 - Third connecting post. Detailed Implementation

[0042] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0043] The terms “first,” “second,” “third,” “fourth,” etc. (if present) in the specification, claims, and accompanying drawings of this application are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments described herein can be implemented in a sequence other than that illustrated or described herein. Furthermore, the terms “comprising” or “having,” and any variations thereof, are intended to cover a non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0044] For ease of understanding, the structure of the power unit of the power electronic module provided in the embodiments of this application is described below. Please refer to [link / reference]. Figure 1 and 2 One embodiment of the power unit of the power electronic module in this application specifically includes: a bus capacitor board 110, a high-voltage half-bridge main power board 120, a bus copper bus 130, a gate driver board 140, and an auxiliary power supply board 150. The bus copper bus 130 is used to connect the bus capacitor board 110 and the high-voltage half-bridge main power board 120, specifically connecting the high-voltage positive and negative terminals of the bus capacitor board 110 and the high-voltage half-bridge main power board 120.

[0045] In this embodiment, the high-voltage half-bridge main power board 120 is arranged parallel above the bus capacitor board 110 and is fixed to the bus capacitor board 110 by the first connecting post 160, forming a capacitor accommodating area (that is, the space between the bus capacitor board 110 and the high-voltage half-bridge main power board 120 in the figure) between the bus capacitor board 110 and the high-voltage half-bridge main power board 120.

[0046] The busbar copper busbar 130 is vertically installed on the side of the busbar capacitor board 110 and the high-voltage half-bridge main power board 120, and is used to connect the positive and negative terminals between the busbar capacitor board 110 and the high-voltage half-bridge main power board 120.

[0047] The gate drive board 140 is disposed parallel above the high-voltage half-bridge main power board 120 and is fixed to the high-voltage half-bridge main power board 120 by the second connecting post 170.

[0048] The auxiliary power supply board 150 is disposed parallel above the gate driving board 140 and is fixed to the gate driving board 140 by the third connecting post 180.

[0049] The high-voltage half-bridge main power board 120 includes at least two high-voltage silicon carbide devices 121 to achieve a DC input voltage in the range of 0 to 2.5kV and output a wide-frequency square wave voltage, which is compatible with various high-voltage working scenarios and topologies.

[0050] In practical applications, this high-voltage silicon carbide device is specifically implemented using a 3.3kV silicon carbide device, such as... Figure 2 and 3The diagram shows a structure using two high-voltage silicon carbide devices as an example. The bus capacitor plate 110 serves as the bottom of the power electronic modular power unit. The high-voltage half-bridge main power board 120 is mounted parallel above the bus capacitor plate 110. The bus copper busbar 130 is mounted vertically to the side of the bus capacitor plate 110 and the high-voltage half-bridge main power board 120 (the right side in the diagram). The gate driver board 140 is inserted directly above the high-voltage half-bridge main power board 120 (located to the left of the high-voltage half-bridge main power board 120 in the diagram). The auxiliary power supply board 150 is mounted parallel above the gate driver board 140.

[0051] In one feasible embodiment, the bus capacitor board 110 includes a capacitor circuit 111, a discharge circuit 112, and a potential connection metal port; the capacitor circuit 111 and the discharge circuit 112 are connected in parallel, connected to the potential connection metal port, and soldered onto the circuit board 113 of the bus capacitor board 110.

[0052] Specifically, the capacitor circuit 111 is formed by integrating multiple thin-film capacitors in a matrix; the potential connection metal port includes a positive potential connection port and a ground potential connection port, and the two ends of the capacitor circuit 111 are connected to the bus copper bus 130 through the positive potential connection port and the ground potential connection port, respectively. The discharge circuit 112 includes a first discharge resistor and a second discharge resistor connected in series, wherein the common terminal of the first discharge resistor and the second discharge resistor is connected to the neutral connection terminal of the capacitor circuit 111, the other end of the first discharge resistor is connected to the positive potential connection port, and the other end of the second discharge resistor is connected to the ground potential connection port.

[0053] like Figure 2 As shown, the capacitor circuit 111 consists of six thin-film capacitors, which are fixed in a matrix on the circuit board 113 of the bus capacitor plate 110. The discharge circuit 112 is formed by two resistors connected in series, and each resistor is connected in parallel with three thin-film capacitors. That is, the series-connected discharge circuit 112 is fixed on the side of the thin-film capacitors. The potential connection metal port is fixed on the edge of the bus capacitor plate 110, which are the DC high voltage positive terminal and the DC high voltage negative terminal, respectively, which are connected to the bus copper busbar 130.

[0054] Specifically, the bus capacitor board 110 consists of an integrated bus capacitor Cbus and a bleeder resistor RC. The integrated capacitor is a matrix of thin-film capacitors. The value of Cbus can be selected, but is not limited to, 30 to 1000 μF. In this embodiment, the value of Cbus is 60 μF, and the capacitance of a single thin-film capacitor is 40 μF. The bleeder resistor RC is composed of multiple resistors connected in series. The total value of RC can be selected, ranging from 400 to 1000 kΩ. In this embodiment, there are 5 resistors, and the total resistance of RC is 600 kΩ.

[0055] In one feasible embodiment, the high-voltage half-bridge main power board 120 further includes at least two heat sinks 122, a high-voltage decoupling capacitor 123, positive and negative interfaces, and a neutral interface;

[0056] The at least two high-voltage silicon carbide devices 121 and the high-voltage decoupling capacitor 123 are disposed on opposite side regions of the circuit board 124 of the high-voltage half-bridge main power board 120 (e.g., Figure 2 (located near the right side of the circuit); the at least two high-voltage silicon carbide devices 121 are connected in series and then connected in parallel with the high-voltage decoupling capacitor 123, and are soldered onto the circuit board 124 of the high-voltage half-bridge main power board 120; the two ends of the high-voltage decoupling capacitor 123 are connected to the bus copper busbar 130 through the positive and negative interfaces.

[0057] The gate driving board 140 is disposed on each of the high voltage silicon carbide devices 121 and is connected to the gate of the corresponding high voltage silicon carbide device 121.

[0058] The high-voltage silicon carbide device 121 is connected to the heat sink 122 through a thermally conductive material. The heat sink 122 is in close contact with the high-voltage silicon carbide device 121 through thermally conductive silicone grease to ensure efficient heat dissipation. The gate driver board 140 communicates with the control unit through an optical fiber interface to achieve precise control.

[0059] like Figure 1 As shown, the high-voltage half-bridge main power board 120 consists of SiC MOSFETs S1 and S2, a heat sink 122, and a decoupling capacitor Ccoupling 123. S1 and S2 are high-voltage silicon carbide MOSFETs, and the decoupling capacitor Ccoupling 123 can be a thin-film capacitor. The Ccoupling value can be selected from, but is not limited to, 100nF to 1μF. In this embodiment, the Ccoupling value is 100nF, and the neutral point output voltage frequency can reach a wide range of 0 to 100kHz. The bus copper busbar 130 connects the DC high voltage positive terminal of the bus capacitor board 110 to the DC high voltage positive terminal of the high-voltage half-bridge main power board 120, and connects the DC high voltage negative terminal of the bus capacitor board 110 to the DC high voltage negative terminal of the high-voltage half-bridge main power board 120.

[0060] In one possible embodiment, the gate driver board 140 includes a driving circuit, a driving input terminal, and a driving output terminal;

[0061] The drive input terminal is connected to the output terminal of the auxiliary power supply board 150, and is used to convert the DC voltage output by the auxiliary power supply board 150 into the gate voltage of the high voltage silicon carbide device 121.

[0062] The drive output terminal is connected to the gate of the high-voltage silicon carbide device 121 and is used to output the gate voltage to drive the high-voltage silicon carbide device 121 to turn on and off.

[0063] It should be noted that the drive output terminal includes a drain desaturation detection terminal and a drive circuit output terminal. The drain desaturation detection terminal is connected to the drain of the high-voltage silicon carbide device 121, and the drive circuit output terminal is connected to the gate of the high-voltage silicon carbide device 121.

[0064] The driving circuit includes a voltage measurement unit, a current measurement unit, a temperature measurement unit, an undervoltage protection unit, an overcurrent protection unit, and an optical fiber signal receiving unit. When an overvoltage, overcurrent, overtemperature, or undervoltage fault is detected, the driving circuit will pull down the gate voltage to shut down the corresponding high-voltage silicon carbide device 121, and output an error signal to the host computer through the optical fiber signal receiving unit.

[0065] In practical applications, the input terminal of the drive circuit of the gate driver board 140 is connected to the output terminal of the auxiliary power supply board 150. The output terminal includes a drain desaturation detection pin and a drive circuit output pin. The drive circuit converts the input DC voltage into the gate voltage required to drive the high-voltage silicon carbide device 121 to turn on and off, wherein the turn-on voltage is 18V and the turn-off voltage is... - 4V.

[0066] In this embodiment, the auxiliary power supply board 150 is composed of a high-voltage isolated power supply. The high-voltage isolated power supply receives a 5V DC input voltage and outputs a 5V isolated DC voltage, featuring a 20kV isolation voltage, strong insulation capability, and a 3pF low coupling capacitance.

[0067] The modular power unit based on 3.3kV silicon carbide devices breaks through the voltage level bottleneck of existing commercial power units, realizing a wide range of DC voltage input and output from 0 to 2.5kV and a wide frequency square wave voltage output from 0 to 100kHz.

[0068] In summary, the modular power unit based on high-voltage silicon carbide devices proposed in this application achieves an increase in the voltage level of the power unit by utilizing novel high-voltage silicon carbide devices. Due to the use of these novel high-voltage silicon carbide power devices, this application can efficiently convert a wide voltage range of DC voltage (0–2.5kV) into a wide voltage range and wide frequency square wave voltage, covering voltage levels applicable to various fields such as new energy power generation and grid-connected energy storage, thus having a wide range of applications.

[0069] Furthermore, the high-voltage half-bridge main power board adopts a half-bridge topology, with each part designed compactly and with reasonable mechanical coordination. It can be adapted to cascaded topology systems such as MMC and CHB with high voltage, high power and multi-level, enabling system construction with strong topology adaptability.

[0070] Furthermore, the bus capacitor board utilizes an integrated film capacitor solution, avoiding the use of bulky electrolytic capacitors, achieving maximum power density and minimum equivalent parasitic inductance at the same voltage level. Simultaneously, the bus capacitor PCB employs a multi-layer design, allowing currents in the same branch to flow in opposite directions across different layers. This reduces the magnetic field strength of currents in the same branch from a magnetic field perspective, significantly lowering the PCB's parasitic inductance. The integrated film capacitor solution and optimized PCB design substantially reduce the overall parasitic inductance of the bus capacitor board, effectively mitigating voltage overshoot during the fast switching process of high-voltage SiC devices.

[0071] Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the specific working process of the device described above can be referred to the corresponding process in the foregoing method embodiments, and will not be repeated here.

[0072] Furthermore, in the description of the embodiments of this application, unless otherwise expressly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0073] In the description of this application, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0074] Finally, it should be noted that the above embodiments are merely specific implementations of this application, used to illustrate the technical solutions of this application, and not to limit them. The protection scope of this application is not limited thereto. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that any person skilled in the art can still modify or easily conceive of changes to the technical solutions described in the foregoing embodiments, or make equivalent substitutions for some of the technical features, within the technical scope disclosed in this application. Such modifications, changes, or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this application, and should all be covered within the protection scope of this application. Therefore, the protection scope of this application should be determined by the protection scope of the claims.

Claims

1. A power electronic modular power unit, characterized by, The application relates to a power supply device for a high-voltage half-bridge main power supply plate. The application relates to a power supply device for a high-voltage half-bridge main power supply plate. The application relates to a power supply device for a high-voltage half-bridge main power supply plate. The application relates to a power supply device for a high-voltage half-bridge main power supply plate. The application relates to a power supply device for a high-voltage half-bridge main power supply plate. The application relates to a power supply device for a high-voltage half-bridge main power supply plate.

2. The power electronics modular power unit of claim 1, wherein, The application relates to a power supply device for a high-voltage half-bridge main power supply plate.

3. The power electronics modular power unit of claim 2, wherein, The application relates to a power supply device for a high-voltage half-bridge main power supply plate.

4. The power electronics modular power unit of claim 2, wherein, The application relates to a power supply device for a high-voltage half-bridge main power supply plate.

5. The power electronics modular power unit of claim 4, wherein, The application relates to a power supply device for a high-voltage half-bridge main power supply plate.

6. The power electronics modular power unit of claim 1, wherein, The application relates to a power supply device for a high-voltage half-bridge main power supply plate. The application relates to a power supply device for a high-voltage half-bridge main power supply plate. The application relates to a power supply device for a high-voltage half-bridge main power supply plate. The application relates to a power supply device for a high-voltage half-bridge main power supply plate.

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9. The power electronics modular power unit of claim 7, wherein, The drive circuit comprises a voltage measurement unit, a current measurement unit, a temperature measurement unit, an under-voltage protection unit, an over-current protection unit and an optical fiber signal receiving unit, so that when over-voltage, over-current, over-temperature or under-voltage faults are detected, the drive circuit pulls down the gate voltage to close the corresponding high-voltage silicon carbide device and outputs an error signal to the upper computer through the optical fiber signal receiving unit.

10. The power electronics modular power unit of claim 1, wherein, The auxiliary power supply board is composed of a high-voltage isolation power supply.

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