Heater for semiconductor manufacturing and related chamber kit and processing chamber

Abstract

The disclosure relates to a heater for semiconductor fabrication and related chamber kits and processing chambers. In one or more embodiments, a chamber kit suitable for semiconductor manufacturing includes a heater and a liner. The heater includes an arcuate heater body including one or more first portions, one or more second portions, and one or more connector portions. The heater includes a first electrode coupled to the arcuate heater body and a second electrode coupled to the arcuate heater body. The liner includes a ledge sized and shaped to support the arcuate heater body, a first opening sized and shaped to receive at least a portion of the heater therethrough, and a second opening sized and shaped to receive at least a portion of the heater therethrough.

Description

Technical Field

[0001] This disclosure relates to heaters and related chamber kits and processing chambers used in semiconductor manufacturing. Background Technology

[0002] Semiconductor substrates are processed for various applications, including the fabrication of integrated devices and microdevices. One method of processing a substrate involves depositing a material, such as a semiconductor or conductive material, onto the upper surface of the substrate. For example, epitaxy is a deposition process that deposits films of various materials onto the surface of a substrate within a processing chamber. During processing, various parameters can affect the uniformity of the material deposited on the substrate.

[0003] However, operations (such as epitaxial deposition) can be time-consuming, costly, and inefficient, and may have limited capacity and throughput. Furthermore, the hardware can involve relatively large dimensions, requiring a larger footprint in the manufacturing facility. Additionally, the process may involve inhomogeneities, which can affect device performance and / or reduce throughput. For example, gas activation may be limited and / or may involve non-uniform activation, which can lead to limited and / or non-uniform film growth and / or dopant concentration.

[0004] Therefore, improved equipment and methods are needed in semiconductor processing. Summary of the Invention

[0005] This disclosure relates to heaters and related chamber kits and processing chambers used in semiconductor manufacturing.

[0006] In one or more embodiments, a chamber assembly suitable for semiconductor manufacturing includes a heater and a liner. The heater includes a heater body comprising one or more first portions, one or more second portions, and one or more connector portions. The heater includes a first electrode coupled to the heater body and a second electrode coupled to the heater body. The liner includes a wall frame sized and shaped to support the heater body, a first opening sized and shaped to receive at least a portion of the heater therethrough, and a second opening sized and shaped to receive at least a portion of the heater therethrough.

[0007] In one or more embodiments, a chamber assembly suitable for semiconductor manufacturing includes a heater and a liner. The heater includes a heater body comprising a first annular segment, a second annular segment spaced apart from the first annular segment, and a connector portion located between the first and second annular segments. The heater includes a first electrode coupled to the heater body and a second electrode coupled to the heater body. The chamber assembly includes a liner comprising a wall frame sized and shaped to support the heater body.

[0008] In one or more embodiments, a processing chamber suitable for semiconductor manufacturing includes a chamber body comprising an injection side and an emission side. The processing chamber includes a substrate support disposed within a processing volume, and a heater disposed adjacent to the injection side of the chamber body. The heater includes an arc-shaped heater body comprising one or more first portions, one or more second portions, and one or more connector portions. The heater includes a first electrode coupled to the arc-shaped heater body and extending at least partially through the chamber body, and a second electrode coupled to the arc-shaped heater body and extending at least partially through the chamber body. Attached Figure Description

[0009] To gain a more detailed understanding of the features and methods used in this disclosure, a more specific description of the disclosure, which has been briefly outlined above, can be obtained with reference to embodiments, some of which are illustrated in the accompanying drawings. However, it should be noted that the accompanying drawings illustrate only exemplary embodiments and should not be construed as limiting their scope, allowing for other equally effective embodiments.

[0010] Figure 1 This is a schematic side cross-sectional view of a processing chamber according to one or more embodiments.

[0011] Figure 2 According to one or more embodiments Figure 1 The diagram shows a schematic partial top cross-sectional view of the processing chamber.

[0012] Figure 3 According to one or more embodiments Figure 1 and Figure 2 A schematic perspective view of the first heater shown.

[0013] Figure 4 According to one or more embodiments Figure 3 A schematic front view of the first heater is shown.

[0014] Figure 5 According to one or more embodiments Figure 1 A schematic partial top view of the first heater, which shows one or more heaters.

[0015] Figure 6 According to one or more embodiments Figure 5 A schematic front view of the first heater is shown.

[0016] Figure 7 This is a schematic partial top view of a first heater and a second heater according to one or more embodiments.

[0017] Figure 8 According to one or more embodiments Figure 7A schematic front view of the first and second heaters shown.

[0018] Figure 9 This is a schematic partial top view of a first heater and a second heater according to one or more embodiments.

[0019] Figure 10 This is a schematic partial top view of a first heater and a second heater according to one or more embodiments.

[0020] Figure 11 According to one or more embodiments Figure 10 A schematic front view of the first heater is shown.

[0021] Figure 12 This is a schematic partial top view of a first heater according to one or more embodiments.

[0022] Figure 13 For placement according to one or more embodiments in Figure 1 The processing chamber Figure 3 A schematic partial cross-sectional side view of the first heater shown.

[0023] Figure 14 For placement according to one or more embodiments in Figure 1 The processing chamber Figure 3 A schematic partial cross-sectional side view of the first heater shown.

[0024] Figure 15 For placement according to one or more embodiments in Figure 1 The processing chamber Figure 3 A schematic partial cross-sectional side view of the first heater shown.

[0025] Figure 16 This is a schematic block diagram view of a substrate processing method for semiconductor manufacturing according to one or more embodiments.

[0026] Figure 17 This is a schematic perspective view of a heater according to one or more embodiments.

[0027] Figure 18 According to one or more embodiments Figure 17 A schematic front view of the heater shown.

[0028] Figure 19 According to one or more embodiments Figure 17 and Figure 18 A schematic top view of the heater shown.

[0029] Figure 20 This is a schematic perspective top view of a heater according to one or more embodiments.

[0030] Figure 21 This is a schematic perspective top view of a heater according to one or more embodiments.

[0031] For ease of understanding, the same component symbols are used where possible to represent common components in the figures. It is envisioned that components and features of one embodiment may be advantageously incorporated into other embodiments without further detail. Detailed Implementation

[0032] This disclosure relates to heaters and related chamber kits and processing chambers used in semiconductor manufacturing.

[0033] This disclosure envisions terms such as "couples," "coupling," "coupled," and "coupled" as including, but not limited to, joining, embedding, welding, fusion, interlocking, and / or fastening, such as using screws, threaded connections, pins, and / or bolts. This disclosure envisions terms such as "couples," "coupling," "coupled," and "coupled" as including, but not limited to, integral formation. This disclosure envisions terms such as "couples," "coupling," "coupled," and "coupled" as including, but not limited to, direct coupling and / or indirect coupling, such as indirect coupling via components such as links, blocks, and / or frames.

[0034] Figure 1 This is a schematic side cross-sectional view of a processing chamber 100 according to one or more embodiments. The processing chamber 100 is a deposition chamber. In one or more embodiments, the processing chamber 100 is an epitaxial deposition chamber. The processing chamber 100 is used to grow an epitaxial film on a substrate 102. The processing chamber 100 forms a precursor crossflow on the top surface 150 of the substrate 102. Figure 1 The processing status of the processing chamber 100 is shown.

[0035] The processing chamber 100 includes an upper body 156, a lower body 148 disposed below the upper body 156, and a flow module 112 disposed between the upper body 156 and the lower body 148. The upper body 156, the flow module 112, and the lower body 148 form the chamber body. Disposed within the chamber body are a substrate support 106, an upper plate 108 (such as an upper window and / or an upper dome), a lower plate 110 (such as a lower window and / or a lower dome), and one or more heat sources 141, 143. The one or more heat sources 141, 143 include a plurality of upper heat sources 141 and a plurality of lower heat sources 143. In one or more embodiments, the upper heat source 141 includes an upper lamp, and the lower heat source 143 includes a lower lamp. This disclosure contemplates that other heat sources (other than or in lieu of lamps) may be used for the various heat sources described herein. For example, the various heat sources described herein may be resistive heaters, light-emitting diodes (LEDs), and / or lasers.

[0036] A substrate support 106 is disposed between an upper plate 108 and a lower plate 110. The substrate support 106 supports the substrate 102. In one or more embodiments, the substrate support 106 includes a base. This disclosure contemplates other substrate supports (including, for example, a substrate carrier and / or one or more annular segments supporting one or more external regions of the substrate 102). The plurality of upper heat sources 141 are disposed between the upper plate 108 and the cover 154. The plurality of upper heat sources 141 form part of the upper heat source module 155.

[0037] The plurality of lower heat sources 143 are disposed between the lower plate 110 and the base plate 152. The plurality of lower heat sources 143 form part of the lower heat source module 145. The upper plate 108 is formed of an energy-transmitting material (such as quartz). The lower plate 110 is formed of an energy-transmitting material (such as quartz).

[0038] A processing volume 136 and a purification volume 138 are formed between the upper plate 108 and the lower plate 110. The processing volume 136 and the purification volume 138 are portions of the internal volume defined at least partially by the upper plate 108, the lower plate 110, and one or more liners 111, 163. In one or more embodiments, the processing volume 136 is the processing volume. One or more liners 111, 163 are disposed inside the chamber body.

[0039] A substrate support 106 is disposed within the internal volume. The substrate support 106 includes a top surface on which a substrate 102 is disposed. The substrate support 106 is attached to a shaft 118. In one or more embodiments, the substrate support 106 is connected to the shaft 118 via one or more arms 119 connected to the shaft 118. The shaft 118 is connected to a motion assembly 121. The motion assembly 121 includes one or more actuators and / or adjustment devices that provide movement and / or adjustment of the shaft 118 and / or the substrate support 106 within the processing volume 136.

[0040] The substrate support 106 may include lifting pin holes 107 disposed therein. Each lifting pin hole 107 is sized to receive a lifting pin 132 for lifting the substrate 102 from the substrate support 106 before or after a deposition process. When the substrate support 106 is lowered from a processing position to a transfer position, the lifting pin 132 may rest on a lifting pin stop 134. The lifting pin stop 134 may include a plurality of arms 139 attached to a shaft 135.

[0041] The flow module 112 includes one or more gas inlets 114 (e.g., a plurality of gas inlets), one or more purge gas inlets 164 (e.g., a plurality of purge gas inlets), and one or more gas outlets 116. The gas inlets 114 and purge gas inlets 164 are disposed on the side of the flow module 112 opposite to the gas outlets 116. A preheating ring 501 is disposed below the gas inlets 114 and the gas outlets 116. The preheating ring 501 is disposed above the purge gas inlets 164. One or more liners 111, 163 are disposed on the inner surface of the flow module 112 and protect the flow module 112 from reactive gases used during deposition and / or cleaning operations. Several gas inlets 114 and several purge gas inlets 164 are each positioned to allow one or more process gases P1 and one or more purge gases P2 to flow parallel to the top surface 150 of the substrate 102 disposed within the processing volume 136. Several gas inlets 114 are fluidly connected to one or more process gas sources 151 and one or more clean gas sources 153. Several purge gas inlets 164 are fluidly connected to one or more purge gas sources 162. One or more gas outlets 116 are fluidly connected to an exhaust pump 157. The one or more process gases P1 supplied using one or more process gas sources 151 may include one or more reactive gases (such as one or more of silicon (Si), phosphorus (P) and / or germanium (Ge)) and / or one or more carrier gases (such as one or more of nitrogen (N2) and / or hydrogen (H2)). One or more purified gases P2 supplied using one or more purified gas sources 162 may include one or more inert gases (such as argon (Ar), helium (He), and / or nitrogen (N2)). One or more clean gases supplied using one or more clean gas sources 153 may include one or more hydrogen (H) and / or chlorine (Cl). In one or more embodiments, one or more process gases P1 include silicon phosphide (SiP) and / or phosphine (PH3), and one or more clean gases include hydrochloric acid (HCl).

[0042] One or more gas exhaust outlets 116 are further connected to or include an exhaust system 109. The exhaust system 109 is fluidly connected to one or more gas exhaust outlets 116 and an exhaust pump 157. The exhaust system 109 may assist in the controlled deposition of layers on the substrate 102. The exhaust system 109 is located on the opposite side of the processing chamber 100 relative to the flow module 112.

[0043] The processing chamber 100 includes one or more liners 111, 163 (e.g., lower liner 111 and upper liner 163). A flow module 112 (which may be at least a portion of the sidewall of the processing chamber 100) includes one or more gas inlets 114 in fluid communication with the processing volume 136. One or more gas inlets 114 are in fluid communication with one or more flow gaps between the upper liner 163 and the lower liner 111. One or more second gas inlets 175 are in fluid communication with one or more inlet openings 183 of the upper liner 163.

[0044] During a deposition operation (e.g., epitaxial growth operation), one or more process gases P1 flow through one or more gas inlets 114, through one or more gaps, and into a processing volume 136 to flow over a substrate 102.

[0045] This disclosure also envisions that during deposition operations, one or more purge gases P2 can be supplied to and discharged from the purge volume 138 (via one or more purge gas inlets 164). The one or more purge gases P2 flow simultaneously with the flow of one or more process gases P1. The one or more process gases P1 are discharged through the gap between the upper liner 163 and the lower liner 111 and through one or more gas exhaust outlets 116. The one or more purge gases P2 can be discharged through one or more outlet openings and through the same one or more gas exhaust outlets 116 as the one or more process gases P1. This disclosure also envisions that the one or more purge gases P2 can be discharged separately through one or more second gas exhaust outlets separate from the one or more gas exhaust outlets 116.

[0046] During the cleaning operation, one or more cleaning gases flow through one or more gas inlets 114, through one or more gaps (between the upper liner 163 and the lower liner 111), and into the treatment volume 136.

[0047] One or more heaters 500a, 500b can be controlled to heat one or more process gases P1 (and / or cleaning gases) to promote bond breaking, thereby depositing them on the substrate 102. As one example, one or more heaters 500a, 500b can heat one or more process gases P1 before and after flowing through the substrate 102. As another example, one or more heaters 500a, 500b can heat one or more process gases P1 in several regions adjacent to the outer annular region of the substrate 102. In one or more embodiments, one or more heaters 500a, 500b include a plurality of heaters 500a, 500b disposed on opposite sides of the processing volume 136. Figure 1(Two are shown in the diagram). This disclosure envisions the use of one or both of heaters 500a and 500b. In addition to or in place of one or more heaters 500a and 500b, one or more heaters 200a and 200b are at least partially covered and / or supported by one or more liners 111 and 163. One or more heaters 200a and 200b can be controlled to heat one or more process gases P1 (and / or cleaning gases). In one or more embodiments, one or more heaters 200a and 200b comprise a plurality of heaters 200a and 200b disposed on opposite sides of the processing volume 136. Figure 1 (Two are shown in the diagram). This disclosure contemplates the use of one or both of heaters 200a and 200b. This disclosure contemplates the use of one or more heaters 500a and 500b in place of preheating ring 501, or the use of one or more heaters 500a and 500b in addition to preheating ring 501. As an example, one or more heaters 500a and 500b and / or (a number of) other heaters may be positioned above or below preheating ring 501. The second lower liner 113 is at least partially supported by lower liner 111, and the second lower liner 113 at least partially covers and / or supports one or more heaters 200a and 200b. In one or more embodiments using lower liner 111 and second lower liner 113, at least a portion of all outer sides of each heater 200a and 200b is covered and isolated from one or more process gases P1 and / or cleaning gases.

[0048] The processing system includes one or more sensor devices 195, 196, 197, 198 (e.g., temperature sensors) configured to measure (e.g., (a number of) parameters) within the processing chamber 100. In one or more embodiments, the one or more temperature sensor devices 195, 196, 197, 198 include a central sensor device 196 and one or more external sensor devices 195, 197, 198. A controller 190 (described below) can control one or more sensor devices 195, 196, 197, 198 and can use at least one of the one or more sensor devices 195, 196, 197, 198 to perform (a number of) methods for analyzing the uniformity of the substrate processing. In one or more embodiments, each of the one or more sensor devices 195, 196, 197, 198 includes a sensor comprising one or more of silicon (Si), carbon (C), gallium (Ga), and / or nitrogen (N). In one or more embodiments, one or more sensor devices 195, 196, 197, 198 each include a silicon sensor, a silicon carbide (SiC) sensor, and / or a gallium nitride (GaN) sensor. In one or more embodiments, each sensor device 195, 196, 197, 198 is a pyrometer and / or an optical sensor, such as an optical pyrometer. This disclosure contemplates the use of sensor devices other than pyrometers, and / or the ability of one or more of sensor devices 195, 196, 197, 198 to measure properties other than temperature (such as metrological properties).

[0049] In one or more embodiments, one or more sensor devices 195, 196, 197, 198 include one or more upper sensor devices 196, 197, 198 disposed above the substrate 102 and adjacent to the cover 154, and one or more lower sensor devices 195 disposed below the substrate 102 and adjacent to the base plate 152. This disclosure envisions at least one of the lower sensor devices 195 being vertically aligned below at least one of the upper sensor devices 196, 197 (such as an external sensor device 197).

[0050] Each sensor device 195, 196, 197, 198 can be a single-wavelength sensor device or a multi-wavelength (such as dual-wavelength) sensor device. In one or more embodiments, the system including process chamber 100 includes any one, any two, or any three of the four icon sensor devices 195, 196, 197, 198. In one or more embodiments, in addition to sensor devices 195, 196, 197, 198, process chamber 100 includes one or more additional sensor devices. In one or more embodiments, process chamber 100 may include sensor devices located at different positions and / or having different orientations than the icon sensor devices 195, 196, 197, 198.

[0051] As shown, controller 190 communicates with processing chamber 100 and is used to control the operation of processes and methods, such as those described herein. Controller 190 is configured to receive data or input as sensor readings from one or more of several sensors, such as sensor devices 195, 196, 197, 198. Sensor devices may include, for example: sensor devices monitoring the growth of several layers on substrate 102; and / or sensor devices monitoring the temperature of substrate 102, one or more heaters 200a, 200b, one or more heaters 500a, 500b, substrate support 106, and / or liners 111, 163. As an example, one or more sensor devices 195, 196, 197, 198 may measure the temperature of one or more heaters 200a, 200b and / or one or more heaters 500a, 500b, and the power supply for one or more heaters 200a, 200b and / or one or more heaters 500a, 500b may be controlled based on the measured temperature (e.g., using feedback control). As described, one or more sensor devices may include, for example, a pyrometer. In one or more embodiments, one or more thermocouples (e.g., proximity thermocouples) are positioned to measure the temperature of one or more heaters 200a, 200b and / or one or more heaters 500a, 500b, and the power supply for one or more heaters 200a, 200b and / or one or more heaters 500a, 500b may be controlled based on the measured temperature (e.g., using feedback control).

[0052] Controller 190 includes a central processing unit (CPU) 193 (e.g., a processor), memory 191 containing instructions, and support circuitry 192 for CPU 193. Controller 190 directly controls various items or controls them via other computers and / or controllers. In one or more embodiments, controller 190 is communicatively coupled to a dedicated controller, and controller 190 acts as a central controller.

[0053] The controller 190 is any form of general-purpose computer processor, and subprocessors thereon or in it, that can be used in an industrial environment to control various substrate processing chambers and devices. The memory 191 or non-transitory computer-readable media is one or more readily available memory types, such as random access memory (RAM), dynamic random access memory (DRAM), static RAM (SRAM), and synchronous dynamic RAM (SDRAM (e.g., DDR1, DDR2, DDR3, DDR3L, LPDDR3, DDR4, LPDDR4 and the like)), read-only memory (ROM), floppy disk, hard disk, flash drive, or any other form of local or remote digital storage. Support circuitry 192 of the controller 190 is coupled to the CPU 193 for supporting the CPU 193. Support circuitry 192 includes cache, power supply, clock circuitry, input / output circuitry systems and subsystems, and the like. Operating parameters (e.g., power supplied to one or more heaters 200a, 200b and / or one or more heaters 500a, 500b, power applied to heat sources 141, 143, cleaning formula and / or treatment formula) and operations are stored as a software utility program in memory 191. This software utility program, when executed or invoked, transforms controller 190 into a purpose-specific controller to control the operation of the various chambers / modules described herein. Controller 190 is configured to perform any of the operations described herein. Instructions stored in memory, when executed, cause one or more of the operations described herein in relation to processing chamber 100 to be performed. Controller 190 and processing chamber 100 are at least part of a system for processing a substrate.

[0054] The various operations described herein can be performed automatically using the controller 190, or some operations can be performed automatically or manually by the user.

[0055] The controller 190 is configured to control the power supply, deposition, cleaning, rotational position, heating, and airflow through the processing chamber 100 of the one or more heaters 200a, 200b and / or one or more heaters 500a, 500b by providing outputs to the sensor devices 195, 196, 197, 198, one or more heaters 200a, 200b and / or one or more heaters 500a, 500b.

[0056] In one or more embodiments, the power supply to heaters 200a, 200b and / or one or more heaters 500a, 500b comprises alternating current (AC) in the range of 16 Amps to 64 Amps, such as 16 Amps to 32 Amps. In one or more embodiments, the power supply has a voltage of 360 V or lower. During processing, in one or more embodiments, heaters 200a, 200b and / or one or more heaters 500a, 500b are heated to a target heater temperature of 400 degrees Celsius or higher, such as 600 degrees Celsius or higher, for example, in the range of 750 degrees Celsius to 850 degrees Celsius. During processing, in one or more embodiments, substrate 102 is heated to a target temperature of 400 degrees Celsius or higher or 600 degrees Celsius or lower. In one or more embodiments, the target temperature of substrate 102 is in the range of 380 degrees Celsius to 600 degrees Celsius, for example, 400 degrees Celsius to 500 degrees Celsius. In one or more embodiments, the target temperature of substrate 102 is less than 500 degrees Celsius. In one or more embodiments, the target temperature of substrate 102 is 400 degrees Celsius or lower. In one or more embodiments, the target temperature of substrate 102 is less than the target heater temperature.

[0057] Figure 2 According to one or more embodiments Figure 1 The diagram shows a schematic partial top cross-sectional view of the processing chamber 100. For visual clarity, in... Figure 2 The flow module 112 and the preheating ring 501 are schematically shown in the figure, and no pattern filling is performed.

[0058] exist Figure 2 In the image, the preheating ring 501 is displayed as a single annular segment (e.g., a ring including a notch) with ghosting to achieve visual clarity. The following section discusses... Figure 5 and Figure 6 Further description Figure 1 One or more heaters 500a, 500b are shown.

[0059] The first heater 200a is positioned adjacent to the injection side of the treatment volume 136, while the second heater 200b is positioned adjacent to the discharge side of the treatment volume 136.

[0060] Figure 3 According to one or more embodiments Figure 1 and Figure 2 The diagram shows a schematic perspective view of the first heater 200a. The second heater 200b may include one or more aspects, features, operations, and / or properties of the first heater 200a.

[0061] The first heater 200a includes an arc-shaped heater body 201, which includes one or more first portions 202 (a plurality of which are shown), one or more second portions 203 (a plurality of which are shown), and one or more connector portions 204 (a plurality of which are shown). The connector portions 204 connect the first portions 202 to the second portions 203, respectively. The first heater 200a includes a first electrode 206 coupled to the arc-shaped heater body 201 and a second electrode 207 coupled to the arc-shaped heater body 201. (See reference below) Figure 1 The lower liner 111 includes a joist 208, which is sized and shaped to at least partially support and / or cover the arc-shaped heater body 201. For visual clarity, Figure 1 The first electrode 206 and the second electrode 207 of a heater 200b are shown in ghosting. (See previous image) Figure 2 The lower liner 111 includes a first opening 209, sized and shaped to receive at least a portion of the first heater 200a therethrough; and a second opening 210, sized and shaped to receive at least a portion of the first heater 200a therethrough. In one or more embodiments, the first electrode 206 and / or the second electrode 207 have an outer diameter of 20 mm or less. This disclosure contemplates that the heater body described herein can have shapes other than arcuate, such as rectangular (e.g., semi-rectangular), square (e.g., semi-square), zigzag (e.g., serpentine), polygonal (e.g., semi-polygonal), beveled, and / or linear shapes. Other shapes are contemplated.

[0062] See you again Figure 3 The first heater 200a includes a first flange portion 211 coupled to a first electrode 206 and a second flange portion 212 coupled to a second electrode 207. One or more first portions 202 include a plurality of first portions 202 spaced apart from each other by a plurality of first openings 213, and one or more second portions 203 include a plurality of second portions 203 spaced apart from each other by a plurality of second openings 214. The plurality of first openings 213 and the plurality of second openings 214 alternate with each other along the arcuate length of the arcuate heater body 201.

[0063] The first electrode 206 and the second electrode 207 are coupled to a pair of end second portions 203a, 203b of the plurality of second portions 203 via a first flange portion 211 and a second flange portion 212, respectively. The arc-shaped heater body 201 has a body profile BP1 including a plurality of reverse turns in an arcuate plane AP1 extending through at least some of the plurality of first portions 202 and the plurality of second portions 203. During heating by the heaters 200a, 200b, current flows from the first electrode 206 through the arc-shaped heater body 201 and into the second electrode 207, which resistively heats the arc-shaped heater body 201. A voltage can be generated across and / or supplied to the arc-shaped heater body 201.

[0064] In one or more embodiments, the arc-shaped heater body 201, the first electrode 206, and the second electrode 207 are formed of silicon carbide (SiC). In one or more embodiments, the arc-shaped heater body 201, the first electrode 206, and the second electrode 207 include heating components (e.g., metal wires, electrical wires (e.g., metal wires, such as copper wires), metal meshes, and / or metal rods) embedded in opaque quartz (e.g., white quartz, gray quartz, and / or black quartz) or transparent materials (such as transparent quartz). In one or more embodiments, the arc-shaped heater body 201, the first electrode 206, and the second electrode 207 are made of graphite coated with SiC. The heating components may be wound around an inductor within a transparent material. Accordingly, heaters 200a and 200b may be resistive heaters, inductive heaters, and / or radiant heaters.

[0065] Figure 4 According to one or more embodiments Figure 3 A schematic front view of the first heater 200a shown.

[0066] Figure 5 According to one or more embodiments Figure 1 A schematic partial top view of the first heater 500a, one of one or more heaters 500a, 500b, is shown. The first heater 500a includes... Figures 1 to 4 The first heater 200a may include one or more states, features, operations, and / or properties of the first heater 500a. The second heater 500b may include one or more states, features, operations, and / or properties of the first heater 500a.

[0067] The first heater 500a includes an arc-shaped heater body 501, which includes one or more first portions 502 (a single first portion 502 is shown), one or more second portions 503 (a single second portion 503 is shown), one or more third portions 505 (a single third portion 505 is shown), and one or more connector portions 504a, 504b (a plurality of connector portions are shown). The connector portions 504a, 504b connect the first portions 502, second portions 503, and third portions 505 together. The one or more first portions 502 include a first annular segment 511, and the one or more second portions 503 include a second annular segment 512 spaced apart from the first annular segment 511 along a radial direction RD1. The one or more third portions 505 include a third annular segment 513 spaced apart from the second annular segment 512 along a radial direction RD1.

[0068] One or more connector portions 504a, 504b include a first connector portion 504a located between one end of a first annular segment 511 and a first end of a second annular segment 512, and a second connector portion 504b located between a second end of the second annular segment 512 and one end of a third annular segment 513. A flange portion 515 connected to the first annular segment 511 is coupled to a first electrode 206. The arc-shaped heater body 501 has a body profile BP2 including a plurality of reverse turns in a plane PL1 extending through the first annular segment 511, the second annular segment 512, and the third annular segment 513.

[0069] Figure 6 According to one or more embodiments Figure 5 A schematic front view of the first heater 500a is shown.

[0070] Figure 7 This is a schematic partial top view of a first heater 700 and a second heater 750 according to one or more embodiments.

[0071] Figure 8 According to one or more embodiments Figure 7 A schematic front view of the first heater 700 and the second heater 750 shown.

[0072] The first heater 700 and the second heater 750 can be replaced by installation. Figure 1 The first heater 500a is shown. The first heater 700 and the second heater 750 include... Figures 1 to 4 The first heater 200a is shown in one or more forms, characteristic components, operation, and / or properties. Two heaters similar to the first heater 700 and the second heater 750 can be disposed on the discharge side of the processing volume 136, instead of... Figure 1The second heater 500b is shown. This disclosure envisions heaters 700 and 750 having different body profiles. For example, in... Figure 7 The top view and / or shown Figure 8 In the front view shown, heaters 700 and 750 may have Figure 4 Front view and Figure 3 The perspective view shows the main outline BP1.

[0073] The first heater 700 includes a first heater body 701, which includes a first annular segment 702, a second annular segment 703 spaced apart from the first annular segment 702, and a connector portion 704 located between the first annular segment 702 and the second annular segment 703. The first heater 700 includes a first electrode 206 coupled to the first heater body 701 and a second electrode 207 coupled to the first heater body 701. In one or more embodiments, the ledge 208 of the lower liner 111 is sized and shaped to at least partially support and / or cover the first heater body 701 (such as the second annular segment 703 of the first heater body 701). The first annular segment 702 and the second annular segment 703 have an azimuth angle AA1 between their ends, and this azimuth angle AA1 is less than 90 degrees.

[0074] The second heater 750 includes a second heater body 751, which includes a third annular segment 752, a fourth annular segment 753 spaced apart from the third annular segment 752, and a second connector portion 754 located between the third annular segment 752 and the fourth annular segment 753. The second heater 750 includes a third electrode 756 coupled to the second heater body 751 and a fourth electrode 757 coupled to the second heater body 751.

[0075] Figure 9 This is a schematic partial top view of a first heater 900 and a second heater 950 according to one or more embodiments.

[0076] The first heater 900 and the second heater 950 can be replaced by installation. Figure 1 The first heater 500a is shown. The first heater 900 and the second heater 950 include... Figure 7 and Figure 8 The first heater 700 and the second heater 750 are shown in one or more forms, characteristic components, operations, and / or properties. Two heaters similar to the first heater 700 and the second heater 950 can be disposed on the discharge side of the processing volume 136, instead of... Figure 1 The second heater 500b is shown.

[0077] The first heater 900 includes a first heater body 901, which includes a first annular segment 902, a second annular segment 903 spaced apart from the first annular segment 902, and a connector portion 904 located between the first annular segment 902 and the second annular segment 903. The first heater 900 includes a first electrode 206 coupled to the first heater body 901 and a second electrode 207 coupled to the first heater body 901. In one or more embodiments, the ledge 208 of the lower liner 111 is sized and shaped to at least partially support and / or cover the first heater body 901 (such as the second annular segment 903 of the first heater body 901).

[0078] The second heater 950 includes a second heater body 751, which includes a third annular segment 952, a fourth annular segment 953 spaced apart from the third annular segment 952, and a second connector portion 954 located between the third annular segment 952 and the fourth annular segment 953. The second heater 950 includes a third electrode 756 coupled to the second heater body 951 and a fourth electrode 757 coupled to the second heater body 951. This disclosure envisions heaters 900 and 950 having different body profiles. For example, in... Figure 9 In the top view shown, heaters 900 and 950 may have Figure 4 Front view and Figure 3 The main outline BP1 is shown in the perspective view.

[0079] Figure 10 This is a schematic partial top view of a first heater 1000a and a second heater 1000b according to one or more embodiments.

[0080] Figure 11 According to one or more embodiments Figure 10 A schematic front view of the first heater 1000a shown.

[0081] The first heater 1000a and the second heater 1000b can be replaced by alternative installations. Figure 1 The first heater 500a and the second heater 500b are shown. The first heater 1000a and the second heater 1000b include... Figures 1 to 4 The first heater 200a shown may include one or more states, characteristic components, operations, and / or properties. The second heater 1000b may include one or more states, characteristic components, operations, and / or properties of the first heater 1000a. Alternatives are possible. Figure 1 The first heater 500a and the second heater 500b shown are used instead of the first heater 1000a and the second heater 1000b.

[0082] The first heater 1000a includes a first heater body 1001, which includes a first annular segment 1002, a second annular segment 1003 spaced apart from the first annular segment 1002, and a connector portion 1004 located between the first annular segment 1002 and the second annular segment 1003. The first heater 1000a includes a first electrode 206 coupled to the first heater body 1001 and a second electrode 207 coupled to the first heater body 1001. In one or more embodiments, the ledge 208 of the lower liner 111 is sized and shaped to at least partially support and / or cover the first heater body 701 (such as the second annular segment 1003 of the first heater body 1001). The first annular segment 1002 and the second annular segment 1003 have an azimuth angle AA2 between their ends, and the azimuth angle AA2 is in the range of 90 degrees to 180 degrees. This disclosure envisions heaters 1000a and 1000b having different body profiles. For example, in Figure 10 The top view and / or shown Figure 11 In the front view shown, heaters 1000a and 1000b may have Figure 5 The main outline BP2 is shown in the top view.

[0083] Figure 12 This is a schematic partial top view of a first heater 1200a according to one or more embodiments. A second heater 1200b may include one or more aspects, features, operations, and / or properties of the first heater 1200a.

[0084] The first heater 1200a and the second heater 1200b can be replaced by relocation. Figure 1 The first heater 500a and the second heater 500b are shown. The first heater 500a and the second heater 500b include... Figure 10 and Figure 11 The first heater 1000a and the second heater 1000b shown may have one or more states, characteristic components, operations and / or properties.

[0085] The first heater 1200a includes a first heater body 1201, which includes a first annular segment 1202, a second annular segment 1203 spaced apart from the first annular segment 1202, and a connector portion 1204 located between the first annular segment 1202 and the second annular segment 1203. The first heater 1200a includes a first electrode 206 coupled to the first heater body 1201 and a second electrode 207 coupled to the first heater body 1201. In one or more embodiments, the ledge 208 of the lower liner 111 is sized and shaped to support the first heater body 901 (such as the second annular segment 1203 of the first heater body 1201).

[0086] Figure 13 For placement according to one or more embodiments in Figure 1 The processing chamber 100 Figure 3 A schematic partial cross-sectional side view of the first heater 200a shown.

[0087] like Figure 13 As shown in the diagram, a first electrode 206 and a second electrode 207 both extend at least partially through a chamber body (such as flow module 112). In one or more embodiments, the first electrode 206 and the second electrode 207 extend through the chamber body and to the outside of the chamber body (which is the atmosphere). A seal 1301 is disposed around each of the first electrode 206 and the second electrode 207 to fluidly isolate the outside of the atmosphere from the vacuum side of the chamber body. In one or more embodiments, the first electrode 206 and the second electrode 207 are made of the same material as the arc heater body 201. In one or more embodiments, the first electrode 206 and the second electrode 207 are formed of SiC. Electrical wiring 1303 is connected to the first electrode 206 and the second electrode 207, respectively. As described above, the first electrode 206 and the second electrode 207 are coupled (e.g., joined) to the arc heater body 201.

[0088] Figure 14 For placement according to one or more embodiments in Figure 1 The processing chamber 100 Figure 3 A schematic partial cross-sectional side view of the first heater 200a shown.

[0089] like Figure 14 As shown with respect to the first electrode 206, a quartz sleeve 1410 is disposed around each of the first electrode 206 and the second electrode 207. In one or more embodiments, the quartz sleeve 1410 is formed of transparent or opaque quartz. In one or more embodiments, an arc-shaped heater body 201 is embedded in the same quartz material as the quartz sleeve 1410. In one or more embodiments, the quartz sleeve 1410 is coupled (e.g., joined) to the arc-shaped heater body 201 and / or the first electrode 206. A seal 1301 may be disposed between a chamber body (e.g., flow module 112) and a shoulder 1415 of the quartz sleeve 1410. The shoulder 1415 may abut against the chamber body.

[0090] Figure 15 For placement according to one or more embodiments in Figure 1 The processing chamber 100 Figure 3 A schematic partial cross-sectional side view of the first heater 200a shown.

[0091] like Figure 15As shown with respect to the first electrode 206, the first electrode 206 and the second electrode 207 are received in corresponding electrical sockets 1505 of the hermetic feedthrough assembly 1510. A seal 1301 may be disposed between the chamber body (e.g., flow module 112) and a shoulder 1515 of the socket housing 1520. The shoulder 1515 may abut against the chamber body.

[0092] Figure 16 This is a schematic block diagram view of a substrate processing method 1600 for semiconductor manufacturing according to one or more embodiments.

[0093] Operation 1601 includes positioning the substrate on a substrate support within the processing volume of the processing chamber. In one or more embodiments, positioning includes moving the substrate support and / or a plurality of lifting pins relative to each other so that the substrate rests on the substrate support.

[0094] Operation 1602 of method 1600 includes heating the substrate to a target temperature. In one or more embodiments, the target temperature is less than 500 degrees Celsius. In one or more embodiments, the target temperature is 400 degrees Celsius or lower.

[0095] Operation 1604 involves causing one or more process gases to flow.

[0096] Operation 1606 includes preheating one or more process gases. The one or more process gases flow through one or more of the heaters described herein, which preheat and preactivate the one or more process gases. The one or more process gases then flow through a substrate to form one or more layers on the substrate.

[0097] Figure 17 This is a schematic perspective view of a heater 1700 according to one or more embodiments. The heater 1700 may include one or more forms, features, operations, and / or properties of a first heater 200a and / or a first heater 500a. The heater 1700 may be used in place of the first heater 200a, the second heater 200b, the first heater 50a, and / or the second heater 50b.

[0098] The heater 1700 includes an arc-shaped heater body 1701, which includes one or more first portions 1702 (a plurality of which are shown), one or more second portions 1703 (a plurality of which are shown), and one or more connector portions 1704 (a plurality of which are shown). The connector portions 1704 connect the first portions 1702 to the second portions 1703, respectively. The heater 1700 includes a first electrode 206 coupled to the arc-shaped heater body 1701 and a second electrode 207 coupled to the arc-shaped heater body 1701.

[0099] The first heater 200a includes a first flange portion 1711 coupled to a first electrode 206 via a first extension 1721, and a second flange portion 1712 coupled to a second electrode 207 via a second extension 1722. One or more first portions 1702 include a plurality of first portions 1702 spaced apart from each other by a plurality of first openings 1713, and one or more second portions 1703 include a plurality of second portions 1703 spaced apart from each other by a plurality of second openings 1714. The plurality of first openings 1713 and the plurality of second openings 1714 alternate with each other along the arcuate length of the arcuate heater body 1701.

[0100] The first flange portion 1711 and the second flange portion 1712 are respectively coupled to a pair of end portions 1723 and 1724 of the arcuate heater body 1701. In one or more embodiments, the end portions 1723 and 1724 have radial widths spanning the first portion 1702, the second portion 1703, and the connector portion 1704, respectively. The arcuate heater body 1701 has a body profile BP3 including a plurality of reverse turns in a plane PL2 (e.g., a horizontal plane, such as an XY plane), the plane PL2 extending through at least some of the plurality of first portions 1702 and the plurality of second portions 1703. In one or more embodiments, the plane PL2 extends through the first portion 1702, the second portion 1703, the connector portion 1704, and the end portions 1723 and 1724. During heating by heater 1700, current flows from the first electrode 206 through the arc-shaped heater body 1701 and into the second electrode 207, which heats the arc-shaped heater body 1701 resistively. Voltage can be generated across the arc-shaped heater body 1701 and / or voltage can be supplied to the arc-shaped heater body 1701.

[0101] In one or more embodiments, the arc-shaped heater body 1701, the first electrode 206, and the second electrode 207 are formed of silicon carbide (SiC). In one or more embodiments, the arc-shaped heater body 1701, the first electrode 206, and the second electrode 207 include heating components (e.g., metal wires, electrical wires (e.g., metal wires, such as copper wires), metal meshes, and / or metal rods) embedded in opaque quartz (e.g., white quartz, gray quartz, and / or black quartz) or transparent materials (such as transparent quartz). In one or more embodiments, the arc-shaped heater body 1701, the first electrode 206, and the second electrode 207 are formed of graphite coated with SiC. The heating components may be wound around an inductor within a transparent material. Accordingly, the heater 1700 may be a resistive heater, an inductive heater, and / or a radiant heater. Figure 18 According to one or more embodiments Figure 17 A schematic front view of the heater 1700 shown.

[0102] Figure 19 According to one or more embodiments Figure 17 and Figure 18 A schematic top view of the heater 1700 shown.

[0103] Connector portion 1704 extends radially along the radial direction RD2. First portion 1702 and second portion 1703 extend azimuthally relative to the radial direction RD2.

[0104] Connector portions 504a and 504b connect the first portion 502, the second portion 503, and the third portion 505 together, respectively. One or more first portions 502 include a first annular segment 511, and one or more second portions 503 include a second annular segment 512 spaced apart from the first annular segment 511 in the radial direction RD1. One or more third portions 505 include a third annular segment 513 spaced apart from the second annular segment 512 in the radial direction RD1.

[0105] The arc-shaped heater body 1701 has an azimuth angle AA2 between its two ends (such as the outer ends of the end portions 1723, 1724), and the azimuth angle AA3 is in the range of 90 degrees to 180 degrees. In one or more embodiments, the azimuth angle AA3 is greater than 90 degrees (such as greater than 120 degrees) and less than 180 degrees.

[0106] Figure 20 This is a schematic perspective top view of a heater 2000 according to one or more embodiments. The heater 2000 may include one or more forms, features, operations, and / or properties of a first heater 200a and / or a first heater 500a. The heater 2000 may be used in place of the first heater 200a, the second heater 200b, the first heater 50a, and / or the second heater 50b.

[0107] Heater 2000 and Figures 17 to 19 The heater 1700 shown is similar and includes one or more of its features, components, properties, and / or operation. The corresponding first portion 1702, the corresponding second portion 1703, the corresponding first opening 1713, and the corresponding second opening 1714 are grouped into a plurality of groups 2001–2003 (three groups are shown). The first group 2001 and the third group 2003 include a pair of terminal first portions 1702a and 1702b, and the second group 2002 includes a pair of terminal second portions 1703a and 1703b.

[0108] The arc-shaped heater body 2010 of heater 2000 has a body profile BP4 that includes a plurality of reverse angles in a plane PL2 (e.g., a horizontal plane, such as an XY plane), the plane PL2 extending through at least some of the plurality of first portions 1702 and the plurality of second portions 1703. The reverse angles are grouped into a plurality of groups 2001 to 2003. The body profile BP4 includes arcuate portions along an azimuth angle between groups 2001 to 2003. The arc-shaped heater body 2010 includes solid portions 2004 and 2005 (e.g., arcuate solid portions) along an azimuth angle between groups 2001 and 2003 of portions 1702 and 1703. The solid portions 2004 and 2005 may have, for example, a solid cross-section (such as a solid rectangular cross-section). The first opening 1713 and the second opening 1714 may be omitted from the solid portions 2004 and 2005. In one or more embodiments, the first group 2001 and the third group 2033 are aligned with the outer heating region, and the second group 2002 is aligned with the inner heating region. In one or more embodiments, the solid portions 2004 and 2005 are aligned with the intermediate heating region between the inner and outer heating regions. The heating regions may correspond to the processing regions of the substrate being processed. In one or more embodiments, groups 2001-2003 relate to heating regions heated to a higher temperature than the heating regions of the solid portions 2004 and 2005. For example, gases involving higher activation temperatures may flow through the regions of groups 2001-2003, and gases involving lower activation temperatures may flow through the regions of solid portions 2004 and 2005. This disclosure contemplates using a smaller number of reverse rotations for lower activation temperatures and a larger number of reverse rotations for higher activation temperatures.

[0109] This disclosure envisions multiple gases involving multiple activation temperatures flowing into corresponding heating zones (e.g., see...). Figure 21 ). Figure 20 Three sets 2001–2003 corresponding to three higher temperature heating zones are shown, and two solid portions 2004 and 2005 corresponding to two lower temperature heating zones. This disclosure envisions the use of different (e.g., higher or lower) numbers of sets and higher temperature heating zones, and / or the use of different (e.g., higher or lower) numbers of solid portions and lower temperature heating zones.

[0110] Figure 21 This is a schematic perspective top view of a heater 2100 according to one or more embodiments. The heater 2100 may include one or more forms, features, operations, and / or properties of a first heater 200a and / or a first heater 500a. The heater 2100 may be used in place of the first heater 200a, the second heater 200b, the first heater 50a, and / or the second heater 50b.

[0111] Heater 2100 and Figure 20 The heater 2000 shown is similar and includes one or more of its features, components, properties, and / or operation. The corresponding first portion 1702, the corresponding second portion 1703, the corresponding first opening 1713, and the corresponding second opening 1714 are grouped into a plurality of groups 2101–2107 (seven groups are shown). The seven groups 2101–2107 each include a terminal first portion 1702a and a terminal second portion 1703a.

[0112] The arc-shaped heater body 2110 of heater 2100 has a body profile BP5, which includes a plurality of reverse angles in plane PL2. The reverse angles are grouped into groups 2101 to 2107. The body profile BP5 includes an arcuate portion along an azimuth angle between groups 2101 to 2107. The arc-shaped heater body 2110 includes solid portions 2111 to 2116 (e.g., arcuate solid portions) along an azimuth angle between groups 2101 to 2107 in portions 1702 and 1703. The solid portions 2111 to 2116 may have, for example, a solid cross-section (such as a solid rectangular cross-section). In one or more embodiments, the first group 2101 and the seventh group 2107 are aligned with the outer heating region, and the fourth group 2104 is aligned with the inner heating region. In one or more embodiments, the first solid portion 2111 and the sixth solid portion 2116 are aligned with the outer heating region, and the third solid portion 2113 and the fourth solid portion 2114 are aligned with the inner heating region. In one or more embodiments, the second solid portion 2112 and the fifth solid portion 2115 are aligned with the intermediate heating region. Groups and / or solid portions (such as...) Figure 21 The second group (2102) and the third group (2103) shown may partially overlap with multiple heating zones. Two or more process gases PG1 and PG2, involving two or more activation temperatures, flow in the heating zones respectively.

[0113] Figure 22 For placement according to one or more embodiments in Figure 1 The processing chamber 100 Figure 3 A schematic partial cross-sectional side view of the first heater 200a shown. Figure 22 The implementation scheme shown is the same as Figure 13 The illustrated implementations are similar and include one or more of their states, features, operations and / or properties. Figure 22 A metal-SiC hybrid electrode is shown.

[0114] This disclosure envisions that the seal 1301 may be omitted. A metal wire 2203 is connected to the first electrode 206 and the second electrode 207. The metal wire 2203 is formed of a metallic material (such as copper and / or aluminum), the first electrode 206 and the second electrode 207 are formed of SiC, and the first flange portion 211 and the second flange portion 212 are also formed of SiC. Various metallic materials are envisioned for the metal wire 2203. In one or more embodiments, the metallic material has a coefficient of thermal expansion that differs from the coefficient of thermal expansion of SiC for the first electrode 206 and the second electrode 207 by 50% or less. In one or more embodiments, the first electrode 206 and the second electrode 207 are bonded to the arc-shaped heater body 201, and the electrical wiring 2203 is soldered to the first electrode 206 and the second electrode 207.

[0115] The benefits of this disclosure include reliable gas activation; adjustable gas activation; modularity in chamber applications; more uniform gas activation; temperature uniformity (e.g., temperature uniformity in the outer regions of the substrate); reduced gas consumption and waste; increased growth rate; and more uniform film growth and / or dopant concentration. Benefits also include enhanced heater ductility; enhanced heater thermal shock resistance; and increased heater heating rate (e.g., 4–5 degrees Celsius or higher).

[0116] Further benefits include enhanced device performance; efficient processing; and increased throughput. As an example, when the target substrate temperature is below 500 degrees Celsius, such as in the range of 380 to 500 degrees Celsius, gas activation is advantageous. For instance, when the substrate temperature is approximately 400 degrees Celsius, gases can be activated on the substrate to approximately 500 degrees Celsius or higher.

[0117] It is conceivable that one or more of the states disclosed herein can be combined. As an example, one or more of the following states, features, components, operations, and / or properties may be combined: processing chamber 100; controller 190; one or more sensor devices 195, 196, 197, 198; (a number) heaters 200a, 200b; preheating ring 501; (a number) heaters 500a, 500b; (a number) heaters 700, 750; (a number) heaters 900, 950; (a number) heaters 1000a, 1000b; (a number) heaters 1200a, 1200b; seal 1301; quartz sleeve 1410; hermetic feedthrough assembly 1510; (a number) heaters 1700, (a number) heaters 2000, and / or (a number) heaters 2100. Furthermore, it is conceivable that one or more states disclosed herein may include some or all of the benefits described above.

[0118] This disclosure envisions that in any heater arrangement herein, electrodes 206 and 207 can be positioned in the same plane (e.g., at the same height), for example, as shown below. Figure 3 , Figure 4 and Figure 18 As shown, or they can be placed in different planes (e.g., top plane and bottom plane), for example, as Figure 8 and Figure 11 As shown.

[0119] While the foregoing describes embodiments of this disclosure, other and additional embodiments of this disclosure may be designed without departing from its basic scope, and the scope of which is determined by the following claims.

Claims

1. A chamber kit suitable for semiconductor manufacturing, comprising: a heater, comprising: a heater body comprising one or more first portions, one or more second portions, and one or more connector portions, a first electrode coupled to the heater body, and a second electrode coupled to the heater body; and a liner, comprising: a ledge sized and shaped to support the heater body, a first opening sized and shaped to receive at least a portion of the heater therethrough, and a second opening sized and shaped to receive at least a portion of the heater therethrough.

2. The chamber kit of claim 1, wherein the one or more first portions comprise a plurality of first portions spaced apart from one another by a plurality of first openings, and the one or more second portions comprise a plurality of second portions spaced apart from one another by a plurality of second openings.

3. The chamber kit of claim 2, wherein the first openings and the second openings alternate with one another along a length of the heater body, the first portions and the second portions are grouped into a plurality of groups, and the heater body further comprises one or more solid portions along an azimuthal direction between the groups.

4. The chamber kit of claim 2, wherein the first electrode and the second electrode are coupled to first and second flange portions of the heater, respectively.

5. The chamber kit of claim 2, wherein the heater body has a body profile comprising a plurality of reverse corners in a plane extending through at least some of the first portions and the second portions.

6. The chamber kit of claim 1, wherein the one or more first portions comprise a first annular segment, and the one or more second portions comprise a second annular segment spaced apart from the first annular segment along a radial direction.

7. The chamber kit of claim 6, wherein the heater body further comprises a third annular segment spaced apart from the second annular segment along the radial direction.

8. The chamber kit of claim 7, wherein the one or more connector portions comprise: a first connector portion between an end of the first annular segment and a first end of the second annular segment, and a second connector portion between a second end of the second annular segment and an end of the third annular segment.

9. The chamber kit of claim 7, wherein the heater body has a body profile comprising a plurality of reverse corners in a plane extending through the first annular segment, the second annular segment, and the third annular segment.

10. The chamber kit of claim 1, wherein the heater body, the first electrode, and the second electrode are formed of silicon carbide (SiC).

11. The chamber kit of claim 1, wherein the heater body is formed of opaque quartz, and the first electrode and the second electrode each comprise a heating element embedded in the opaque quartz.

12. A chamber kit suitable for semiconductor manufacturing, comprising: a heater, comprising: a heater body comprising a first annular segment, a second annular segment spaced apart from the first annular segment, and a connector portion between the first annular segment and the second annular segment, a first electrode coupled to the heater body, and a second electrode coupled to the heater body; and an inner liner comprising a ledge sized and shaped to support the heater body.

13. The chamber kit of claim 12, wherein the first annular segment and the second annular segment have an azimuthal angle between two ends, and the azimuthal angle is less than 90 degrees.

14. The chamber kit of claim 12, wherein the first annular segment and the second annular segment have an azimuthal angle between two ends, and the azimuthal angle is in a range of 90 degrees to 180 degrees.

15. The chamber kit of claim 12, further comprising a second heater, the second heater comprising: a second heater body comprising a third annular segment, a fourth annular segment spaced apart from the third annular segment, and a second connector portion between the third annular segment and the fourth annular segment; a third electrode coupled to the second heater body; and a fourth electrode coupled to the second heater body.

16. A process chamber suitable for semiconductor manufacturing, comprising: a chamber body comprising an injection side and a discharge side; a substrate support disposed in a process volume; and a heater disposed adjacent to the injection side of the chamber body, the heater comprising: an arcuate heater body comprising one or more first portions, one or more second portions, and one or more connector portions, a first electrode coupled to the arcuate heater body and extending at least partially through the chamber body, and a second electrode coupled to the arcuate heater body and extending at least partially through the chamber body.

17. The process chamber of claim 16, further comprising a seal disposed around each of the first electrode and the second electrode.

18. The process chamber of claim 16, further comprising a quartz sleeve disposed around each of the first electrode and the second electrode, respectively.

19. The process chamber of claim 16, wherein the first electrode and the second electrode are received in respective electrical sockets of a gas-tight feedthrough assembly.

20. The process chamber of claim 16, further comprising a second heater disposed adjacent to the discharge side of the chamber body, the second heater comprising: a second arcuate heater body comprising one or more third portions, one or more fourth portions, and one or more second connector portions; a third electrode coupled to the arcuate heater body; and a fourth electrode coupled to the arcuate heater body.

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