Common metal mask plate and evaporation system

Abstract

The application provides a common metal mask plate and an evaporation system. The common metal mask plate comprises a peripheral area and an opening area, the opening area has a plurality of evaporation openings, the peripheral area and the opening area each are a part around the evaporation openings and respectively comprise a bridge part and a first etching part arranged in sequence close to the evaporation openings, a first surface of the bridge part is protruded from a first surface of the first etching part and is used for being attached to a to-be-evaporated substrate, the first etching part is configured to form a first cavity with the to-be-evaporated substrate, the first cavity is communicated with the evaporation openings, an edge of the peripheral area away from the evaporation openings comprises a second etching part, a welding spot for welding a frame is arranged in the second etching part, the first surface of the first etching part is protruded from the first surface of the second etching part, the second etching part is configured to form a second cavity with the to-be-evaporated substrate, and the second cavity is communicated with an external environment. The application can reduce the attachment area of the common metal mask plate and the to-be-evaporated substrate.

Description

Public metal mask and vapor deposition system Technical Field

[0001] This invention relates to the field of display device manufacturing technology, and more specifically, to a common metal mask and a vapor deposition system. Background Technology

[0002] Semiconductor display devices (such as organic light-emitting diodes) In the manufacturing process of Emitting Diode (OLED), many film structures are formed by vapor deposition using a common metal mask. During vapor deposition, the vapor deposition source is placed on one side of the common metal mask, and the substrate to be vaporized is placed on the other side of the common metal mask. The vapor deposition material evaporated by the vapor deposition source is deposited onto the substrate to be vaporized through openings in the common metal mask.

[0003] However, the side of the common metal mask facing the substrate to be vaporized is a flat plane. During the vaporization process, the substrate to be vaporized and the common metal mask are in contact, which can easily cause the film to stick together. When separating the substrate to be vaporized and the common metal mask, a lot of friction can be generated, which can damage the substrate to be vaporized. Summary of the Invention

[0004] This invention provides a common metal mask and a vapor deposition system to solve the technical problems existing in related technologies, such as the adhesion between the substrate to be vapor deposited and the common metal mask during the vapor deposition process, which easily leads to film sticking.

[0005] In a first aspect, embodiments of this application provide a common metal mask having opposing first and second surfaces, the first surface being oriented toward a substrate to be vapor-deposited; the common metal mask includes: a peripheral region located at an edge and an opening region located inside the peripheral region; the opening region has a plurality of vapor deposition openings; the peripheral region and the opening region having adjacent edges forming a vapor deposition opening located at an end;

[0006] Along a direction parallel to the common metal mask, the peripheral area and the opening area are each located around the vapor deposition opening, and each includes: a bridge portion and a first etching portion arranged sequentially close to the vapor deposition opening. The first surface of the bridge portion protrudes from the first surface of the first etching portion and is used to adhere to the substrate to be vapor deposited. The first etching portion is configured to form a first cavity with the substrate to be vapor deposited, and the first cavity is connected to the vapor deposition opening.

[0007] The periphery of the edge away from the vapor deposition opening includes: a second etching section; solder joints for welding the frame are disposed in the second etching section; a first surface of the first etching section protrudes from the first surface of the second etching section; the second etching section is configured to form a second cavity with the substrate to be vapor deposited, and the second cavity is in communication with the external environment.

[0008] In some embodiments, the peripheral region further includes a transition portion and a first etched portion;

[0009] In the peripheral area, along the direction close to the opening area, the second etched part, the transition part, the first etched part, the bridge part and the first etched part are connected in sequence. The two ends of the first surface of the transition part are flush with the first surface of the second etched part and the first surface of the first etched part, respectively. The second surfaces of the second etched part, the transition part and the first etched part are flush with each other.

[0010] In some embodiments, the opening region includes:

[0011] Multiple first frame strips are spaced along a first direction and extend along a second direction;

[0012] Multiple second frame strips are spaced along a second direction and extend along a first direction; the first and second directions are perpendicular and parallel to a common metal mask plate.

[0013] The two ends of the first frame strip and the two ends of the second frame strip are respectively connected to the peripheral area; the area enclosed by the first frame strip and the second frame strip forms a vapor deposition opening;

[0014] The bridge section includes a first bridge section extending along a second direction and a second bridge section extending along a first direction, respectively disposed in the middle area of ​​the first frame strip and the middle area of ​​the second frame strip.

[0015] In some embodiments, along the first direction, a first etched portion is provided on both sides of the first bridge portion of the first frame strip;

[0016] Along the second direction, the second bridge portion of the second frame strip is provided with a first etched portion on both sides.

[0017] In some embodiments, the centroid of the common metal mask plate is located on the first bridge portion on the first frame strip in the center.

[0018] In some embodiments, the first surface of the transition portion is inclined, and the angle between it and the first surface of the first etched portion is not less than 105 degrees and not more than 155 degrees.

[0019] In some embodiments, the wavy shape of the common metal mask is Wave, the protrusion height of the solder joint is H, and the height difference between the second etched portion and the bridge portion is D, satisfying the following relationship:

[0020] Wave+H <D。

[0021] In some embodiments, the first surface of the bridge portion includes a straight section and an inclined section; the inclined section is located at the edge where the bridge portion connects with the first etched portion; the angle between the inclined section and the straight section is not less than 105 degrees and not greater than 155 degrees.

[0022] In some embodiments, at least one of the following is also included:

[0023] The width of the bridge section shall be no less than 200 micrometers and no more than 250 micrometers;

[0024] The height difference between the first etched portion and the bridge portion shall be no less than 10 micrometers and no more than 25 micrometers;

[0025] The height difference between the second etched portion and the bridge portion of the public metal mask is not less than 40 micrometers and not more than 50 micrometers.

[0026] Secondly, embodiments of this application also provide a vapor deposition system, including any of the common metal mask plates provided in the first aspect above, and a substrate to be vapor deposited;

[0027] The first surface of the bridge portion of the common metal mask plate is bonded to the substrate to be vapor-deposited;

[0028] A first cavity is formed between the first etched portion of the common metal mask and the substrate to be vapor-deposited, and the first cavity is connected to the vapor deposition opening of the common metal mask;

[0029] A second cavity is formed between the second etched section of the public metal mask and the substrate to be vaporized, and the second cavity is connected to the external environment.

[0030] The public metal mask provided in this application has the following technical advantages:

[0031] This application embodiment divides the common metal mask into a peripheral area and an opening area, and designs different structures for the peripheral area and the opening area to reduce the bonding area between the common metal mask and the substrate to be vaporized, thereby reducing the risk of the common metal mask sticking to the substrate and reducing the friction between the common metal mask and the substrate to be vaporized, thus reducing the risk of damage to the substrate to be vaporized.

[0032] Specifically, (1) the first surface of the common metal mask faces the substrate to be vaporized. In this application, the portion of the opening area near the vaporization opening is configured as a bridge portion and a first etching portion arranged sequentially near the vaporization opening. The first surface of the first etching portion is lower, and the first surface of the bridge portion is higher. The bridge portion is in contact with the substrate to be vaporized, which can reduce the contact area between the common metal mask and the substrate to be vaporized, thereby reducing the friction. Moreover, when the bridge portion is in contact with the substrate to be vaporized, there is a gap between the first etching portion and the substrate to be vaporized, forming a first cavity. The first cavity is connected to the first opening, so that the air pressure in the first cavity is approximately the same as the air pressure of the external environment, thereby reducing the difficulty of separating the common metal mask and the substrate to be vaporized, and reducing the friction between the common metal mask and the substrate to be vaporized.

[0033] (2) In this application, the portion of the peripheral area near the vapor deposition opening is configured as a bridge portion and a first etching portion arranged sequentially near the vapor deposition opening. The bridge portion is in contact with the substrate to be vapor-deposited, which can reduce the contact area between the common metal mask and the substrate to be vapor-deposited, thereby reducing friction. Moreover, after the peripheral area is welded to the frame, a raised solder joint is formed, which is formed in the second etching portion. Therefore, the first surface of the second etching portion is lower than the first etching portion, providing longitudinal survival space for the solder joint, avoiding contact between the solder joint and the substrate to be vapor-deposited, and thus avoiding the possibility of friction between the solder joint and the substrate to be vapor-deposited. Furthermore, when the bridge portion is in contact with the substrate to be vapor-deposited, there is a gap between the second etching portion located at the edge of the peripheral area and the substrate to be vapor-deposited, forming a second cavity. The second cavity is connected to the external environment, so that the air pressure in the second cavity is approximately the same as the air pressure in the external environment, thereby reducing the difficulty of separating the common metal mask and the substrate to be vapor-deposited, and reducing the friction between the common metal mask and the substrate to be vapor-deposited.

[0034] (3) The peripheral area near the opening area is set in the same way as the opening area. The first etching part is set near the vapor deposition opening and is relatively thin, while the bridge part is set away from the vapor deposition opening and is relatively thick. The edge of the peripheral area is thinned, which makes the overall structure of the common metal mask more regular and reduces the possibility of warping or deformation of the common metal mask. Attached Figure Description

[0035] To more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings used in the embodiments of the present invention will be briefly introduced below. It should be understood that the following drawings only show some embodiments of the present invention and should not be regarded as a limitation on the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0036] Figure 1 is a structural schematic diagram of a public metal mask provided in an embodiment of this application;

[0037] Figure 2 is a schematic diagram of the structure of the peripheral area of ​​a public metal mask provided in an embodiment of this application;

[0038] Figure 3 is a schematic diagram of the opening area of ​​a public metal mask provided in an embodiment of this application;

[0039] Figure 4 is a partially enlarged structural schematic diagram of point A in Figure 1;

[0040] Figure 5 is a structural schematic diagram of the cross section at C-C' in Figure 4;

[0041] Figure 6 is a schematic diagram of one of the structures of a vapor deposition system provided in an embodiment of this application;

[0042] Figure 7 is a magnified view of part B in Figure 1;

[0043] Figure 8 is a structural schematic diagram of the cross section at D-D' in Figure 7;

[0044] Figure 9 is a structural schematic diagram of the cross section at E-E' in Figure 7;

[0045] Figure 10 is one of the structural schematic diagrams of a vapor deposition system provided in an embodiment of this application.

[0046] Figure label:

[0047] 100 - Common metal mask; 11 - Evaporation opening; 12 - First surface; 13 - Second surface; 14 - Bridge; 141 - First bridge; 142 - Second bridge; 15 - First etching section; 16 - Second etching section; 17 - Transition section;

[0048] 110 - Surrounding Area;

[0049] 120 - Opening area; 121 - First frame strip; 122 - Second frame strip;

[0050] 300 - First cavity; 400 - Second cavity; 500 - Substrate to be vapor-deposited;

[0051] X - First direction; Y - Second direction. Detailed Implementation

[0052] The embodiments of this application are described below with reference to the accompanying drawings. It should be understood that the embodiments described below with reference to the accompanying drawings are exemplary descriptions for explaining the technical solutions of the embodiments of this application, and do not constitute a limitation on the technical solutions of the embodiments of this application.

[0053] Those skilled in the art will understand that, unless specifically stated otherwise, the terms "described" and "the" as used herein may also include plural forms. It should be further understood that the term "comprising" as used in this application's specification means the presence of the described features, integers, and / or components, but does not exclude implementations of other features, data, elements, components, and / or combinations thereof supported by this art. It should be understood that when we say an element is "connected to" another element, the element may be directly connected or coupled to the other element, or it may mean that the element and the other element are connected through an intermediate element. The term "and / or" as used herein refers to at least one of the items defined by the term; for example, "A and / or B" can be implemented as "A," or as "B," or as "A and B."

[0054] To make the objectives, technical solutions, and advantages of this application clearer, the embodiments of this application will be described in further detail below with reference to the accompanying drawings.

[0055] The research and development approach of this application includes: Related technologies employ a method of creating grooves on the first surface of a common metal mask to reduce the contact area between the common metal mask and the substrate to be vapor-deposited, thereby reducing friction. However, when the common metal mask and the substrate are bonded together, a closed cavity region is formed between the groove and the substrate. Vapor deposition is generally performed in a vacuum environment, resulting in the closed cavity region between the common metal mask and the substrate also being under vacuum pressure. After vapor deposition is completed and the vacuum environment is removed, the common metal mask and the substrate are in the external environment. A pressure difference exists between the air pressure in the closed cavity region and the air pressure in the external environment, which increases the difficulty of separating the common metal mask and the substrate and increases the risk of damage to the substrate.

[0056] This application provides a common metal mask 100 and a vapor deposition system to solve the above-mentioned technical problems of the prior art.

[0057] This application provides a common metal mask 100. Schematic diagrams of the common metal mask 100 are shown in Figures 1-5 and 7-9. The common metal mask 100 has opposing first surfaces 12 and second surfaces 13. The first surface 12 faces the substrate 500 to be deposited. The common metal mask 100 includes a peripheral region 110 located at the edge and an opening region 120 located inside the peripheral region 110. The opening region 120 has a plurality of evaporation openings 11. The edges of the peripheral region 110 and the opening region 120, which are close to each other, form the evaporation openings 11 located at the ends.

[0058] Along a direction parallel to the common metal mask 100, the peripheral area 110 and the opening area 120 are each located around the vapor deposition opening 11, and each includes: a bridge portion 14 and a first etching portion 15 arranged sequentially close to the vapor deposition opening 11. The first surface 12 of the bridge portion 14 protrudes from the first surface 12 of the first etching portion 15 and is used to adhere to the substrate 500 to be vapor deposited. The first etching portion 15 is configured to form a first cavity 300 between itself and the substrate 500 to be vapor deposited, and the first cavity 300 communicates with the vapor deposition opening 11.

[0059] The periphery 110, away from the edge of the vapor deposition opening 11, includes: a second etched portion 16; solder joints for welding the frame are disposed within the second etched portion 16; a first surface 12 of the first etched portion 15 protrudes from the first surface 12 of the second etched portion 16; the second etched portion 16 is configured to form a second cavity 400 between itself and the substrate 500 to be vapor deposited, and the second cavity 400 is in communication with the external environment.

[0060] In this embodiment, by dividing the common metal mask 100 into a peripheral area 110 and an opening area 120, and designing different structures for the peripheral area 110 and the opening area 120, the bonding area between the common metal mask 100 and the substrate 500 to be vaporized is reduced, thereby reducing the risk of adhesion between the common metal mask 100 and the substrate 500 to be vaporized, and thus reducing the friction between the common metal mask 100 and the substrate 500 to be vaporized, and reducing the risk of damage to the substrate 500 to be vaporized.

[0061] Specifically, (1) As shown in Figures 7-9, the first surface 12 of the common metal mask 100 faces the substrate 500 to be vaporized. In this application, the portion of the opening area 120 near the vaporization opening 11 is set as a bridge portion 14 and a first etching portion 15 that are sequentially close to the vaporization opening 11. The first surface 12 of the first etching portion 15 is lower, and the first surface 12 of the bridge portion 14 is higher. The bridge portion 14 is in contact with the substrate 500 to be vaporized, which can reduce the contact area between the common metal mask 100 and the substrate 500 to be vaporized, thereby reducing the friction. Furthermore, as shown in Figure 10, when the bridge portion 14 contacts and adheres to the substrate 500 to be vaporized, there is a gap between the first etched portion 15 and the substrate 500 to be vaporized, forming a first cavity 300. The first cavity 300 is connected to the first opening, so that the air pressure inside the first cavity 300 is approximately the same as the air pressure of the external environment. This reduces the difficulty of separating the common metal mask 100 from the substrate 500 to be vaporized and reduces the friction between the common metal mask 100 and the substrate 500 to be vaporized.

[0062] (2) As shown in Figures 4-6, in this application, the portion of the peripheral area 110 near the vapor deposition opening 11 is configured as a bridge portion 14 and a first etching portion 15 arranged sequentially near the vapor deposition opening 11. The bridge portion 14 is in contact with the substrate 500 to be vapor-deposited, which can reduce the contact area between the common metal mask plate 100 and the substrate 500 to be vapor-deposited, thereby reducing the friction. Moreover, the peripheral area 110 needs to be welded to the frame. After welding to the frame, a raised solder joint is formed on the first surface 12. The solder joint is formed in the second etching portion 16. Therefore, the first surface 12 of the second etching portion 16 is lower than the first etching portion 15, providing longitudinal survival space for the solder joint, avoiding contact between the solder joint and the substrate 500 to be vapor-deposited, thereby avoiding the possibility of friction between the solder joint and the substrate 500 to be vapor-deposited. Furthermore, as shown in FIG6, when the bridge portion 14 contacts and adheres to the substrate 500 to be vaporized, there is a gap between the second etched portion 16 located at the edge of the peripheral area 110 and the substrate 500 to be vaporized, forming a second cavity 400. The second cavity 400 is connected to the external environment, so that the air pressure inside the second cavity 400 is approximately the same as the air pressure of the external environment. This can reduce the difficulty of separating the common metal mask 100 and the substrate 500 to be vaporized, and reduce the friction between the common metal mask 100 and the substrate 500 to be vaporized.

[0063] (3) The peripheral area 110 near the opening area 120 is set in the same way as the opening area 120. The first etching part 15 is set near the vapor deposition opening 11 and is relatively thin, while the bridge part 14 is set away from the vapor deposition opening 11 and is relatively thick. The edge of the peripheral area 110 is thinner, which makes the overall structure of the common metal mask 100 more regular and reduces the possibility of warping or deformation of the common metal mask 100.

[0064] Optionally, the first surface 12 can be the top surface, and the second surface 13 is the bottom surface opposite to the top surface. During the vapor deposition process, the top surface is the side that is in contact with the substrate 500 to be vapor deposited, and the bottom surface is the side that is away from the substrate 500 to be vapor deposited.

[0065] It should be noted that, in Figure 9, due to space limitations, the size of the vapor deposition opening 11 is omitted using “…”. In fact, along the first direction X, the size of the vapor deposition opening 11 is larger than the size of the second frame 122.

[0066] It should be noted that the common metal mask 100 is a flat base material before manufacturing. The first etched part 15, the second etched part 16, and the transition part 17 (see below) are obtained by etching different thicknesses on the base material. The bridge part 14 can also be obtained by etching a portion of the base material or by grinding the base material.

[0067] It should be noted that, as shown in Figures 2 and 3, the opening region 120 and the peripheral region 110 are partitions of the body of the common metal mask 100. The vapor deposition openings 11 are arranged in an array, and along the first direction X and the second direction Y, the vapor deposition openings are divided into end vapor deposition openings 11 and middle vapor deposition openings 11. The edge of the peripheral region 110 near the opening region 120 is serrated, and the edge of the opening region 120 near the peripheral region 110 is also serrated, so that the serrations of the peripheral region 110 and the opening region 120 align to form the end vapor deposition opening 11. In other words, the vapor deposition opening 11 located at the edge of the opening region 120 is formed by the simultaneous enclosure of the opening region 120 and the body of the peripheral region 110, while the vapor deposition opening 11 located in the middle of the opening region 120 is formed only by the enclosure of the body of the opening region 120 of the common metal mask.

[0068] In some embodiments, as shown in Figures 4 and 5, the peripheral region 110 further includes a transition portion 17 and a first etched portion 15.

[0069] In the peripheral area 110, along the direction close to the opening area 120, the second etched portion 16, the transition portion 17, the first etched portion 15, the bridge portion 14 and the first etched portion 15 are connected in sequence. The two ends of the first surface 12 of the transition portion 17 are flush with the first surface 12 of the second etched portion 16 and the first surface 12 of the first etched portion 15, respectively. The second surfaces 13 of the second etched portion 16, the transition portion 17 and the first etched portion 15 are flush with each other.

[0070] In this embodiment, the transition portion 17 connects the second etching portion 16 and the first etching portion 15. The thickness of the transition portion 17 changes gradually and uniformly to avoid abrupt changes in the thickness between the second etching portion 16 and the first etching portion 15, thereby avoiding stress abrupt changes between the second etching portion 16 and the first etching portion 15 and reducing the possibility of deformation of the common metal mask 100 due to stress abrupt changes.

[0071] In some embodiments, as shown in FIG3 and FIG7-9, the opening area 120 includes a plurality of first frame strips 121 and a plurality of second frame strips 122.

[0072] Multiple first frame strips 121 are spaced apart along the first direction X and extend along the second direction Y.

[0073] Multiple second frame strips 122 are spaced along the second direction Y and extend along the first direction X; the first direction X and the second direction Y are perpendicular and parallel to the common metal mask plate 100.

[0074] Both ends of the first frame strip 121 and both ends of the second frame strip 122 are connected to the peripheral area 110 respectively; the area enclosed by the first frame strip 121 and the second frame strip 122 forms a vapor deposition opening 11.

[0075] The bridge portion 14 includes a first bridge portion 141 extending along the second direction Y and a second bridge portion 142 extending along the first direction X, which are respectively disposed in the middle region of the first frame strip 121 and the middle region of the second frame strip 122.

[0076] In this embodiment, the first frame strip 121 and the second frame strip 122 intersect each other and are arranged longitudinally and transversely. The intersections of the first frame strip 121 and the second frame strip 122 overlap, and the area enclosed by the first frame strip 121 and the second frame strip 122 forms a vapor deposition opening 11. In the first frame strip 121, the first bridge portion 141 is similar to the first frame strip 121, both being strip-shaped and disposed in the middle region of the first frame strip 121. In the second frame strip 122, the second bridge portion 142 is similar to the second frame strip 122, being strip-shaped and disposed in the middle region of the second frame strip 122. Therefore, the first bridge portion 141 and the second bridge portion 142 can play a reinforcing role, reducing the possibility of deformation of the first frame strip 121 and the second frame strip 122.

[0077] Optionally, on a plane parallel to the surface of the common metal mask 100, the first direction X is transverse and the second direction Y is longitudinal.

[0078] In some embodiments, as shown in FIG8, a first etched portion 15 is provided on both sides of the first bridge portion 141 of the first frame strip 121 along the first direction X;

[0079] As shown in Figure 9, along the second direction Y, the second bridge portion 142 of the second frame strip 122 is provided with a first etched portion 15 on both sides.

[0080] In this embodiment, in the first frame strip 121, first etched portions 15 are symmetrically arranged on both sides of the first frame strip 121 near the edges of the vapor deposition opening 11, and a first bridge portion 141 is disposed between the two symmetrical first etched portions 15. In the second frame strip 122, second etched portions 16 are symmetrically arranged on both sides of the second frame strip 122 near the edges of the vapor deposition opening 11, and a second bridge portion 142 is also disposed between the two symmetrical first etched portions 15. The symmetrical structure in this embodiment can also reduce the possibility of deformation of the first frame strip 121 and the second frame strip 122.

[0081] In some embodiments, as shown in FIG7, the centroid of the common metal mask plate 100 is located on the first bridge portion 141 on the first frame strip 121 in the middle, at the intersection of the longitudinal and transverse central axes of FIG7.

[0082] In this embodiment, the centroid of the common metal mask 100 is located on the first bridge portion 141 on the first frame strip 121 in the middle, which also helps to reduce the possibility of warping or deformation of the common metal mask 100.

[0083] In some embodiments, the central axis of the common metal mask 100 extending along the second direction Y is also partially located on the first bridge portion 141 on the first frame strip 121 in the middle, and the second frame strip 122 is symmetrically distributed on both sides of the central axis of the common metal mask 100 extending along the first direction X, which also helps to reduce the possibility of warping or deformation of the common metal mask 100.

[0084] In some embodiments, as shown in FIG5, the first surface 12 of the transition portion 17 is inclined, and the angle α between it and the first surface 12 of the first etched portion 15 is not less than 105 degrees and not greater than 155 degrees.

[0085] In this embodiment, the first surface 12 of the first etched portion 15 and the first surface 12 of the second etched portion 16 have a discontinuity, and the first surface 12 of the transition portion 17 is inclined to transitionally connect the first surface 12 of the first etched portion 15 and the first surface 12 of the second etched portion 16 at both ends, so that the stress of the common metal mask plate 100 is uniformly transitioned, and deformation caused by stress abrupt change is prevented.

[0086] Furthermore, the angle α between the first surface 12 of the transition portion 17 and the first surface 12 of the first etched portion 15 is not less than 105 degrees and not greater than 155 degrees, so that the junction of the transition portion 17 and the first etched portion 15 is obtuse, thereby reducing the possibility that the sharp point formed at the junction of the transition portion 17 and the first etched portion 15 may damage the vapor-deposited substrate 500.

[0087] In some embodiments, the wavy value of the common metal mask 100 is Wave, the protrusion height of the solder joint is H, and the height difference between the second etched portion 16 and the bridge portion 14 is D, satisfying the relationship (1):

[0088] Wave+H <D (1)

[0089] In this embodiment, the waviness value is defined as the visible wave-like undulations exhibited by the common metal mask 100 due to uneven internal stress. It is a direct manifestation of the external macroscopic morphology caused by uneven internal stress. The quantification method is usually the ratio of wave height to wavelength per unit length. The smaller the ratio, the lower the degree of undulation and the milder the waviness. In short, the waviness value can characterize the height of the undulations of the common metal mask 100. The waviness value can be measured or calculated by methods commonly used in the art, and will not be elaborated here. Since the relationship (1) is satisfied, the solder joint at the highest point of the undulation of the common metal mask 100 will not be higher than the first surface 12 of the bridge portion 14, which can ensure that the solder joint on the second etching portion 16 will never protrude from the bridge portion 14 and thus damage the substrate 500 to be vapor-deposited.

[0090] In some embodiments, as shown in FIG8, the first surface 12 of the bridge portion 14 includes a straight section and an inclined section; the inclined section is located at the edge where the bridge portion 14 connects with the first etched portion 15; the angle β between the inclined section and the straight section is not less than 105 degrees and not greater than 155 degrees.

[0091] In this embodiment, there is a discontinuity between the straight section of the bridge portion 14 and the first surface 12 of the first etched portion 15, and the inclined section of the bridge portion 14 is inclined to transition between the straight sections at both ends and the first surface 12 of the first etched portion 15, so that the stress of the common metal mask plate 100 is uniformly transitioned, preventing deformation due to stress abrupt changes.

[0092] Furthermore, the angle β between the inclined section and the straight section of the bridge portion 14 is not less than 105 degrees and not greater than 155 degrees, so that the junction of the straight section and the inclined section of the bridge portion 14 is an obtuse angle, thereby reducing the possibility of the sharp point formed at the junction of the straight section and the inclined section causing damage to the substrate 500 to be vapor-deposited.

[0093] Considering that the bridge portion 14 is too narrow, the bonding effect between the common metal mask 100 and the substrate 500 to be deposited is poor, making them prone to displacement and deformation. Conversely, if the bridge portion 14 is too wide, friction is excessive. Therefore, in some embodiments, the width of the bridge portion 14 is not less than 200 micrometers and not more than 250 micrometers. This minimizes the contact area between the common metal mask 100 and the substrate 500 while ensuring good bonding, thus reducing friction.

[0094] Considering that a large height difference between the first etched portion 15 and the bridge portion 14 would make the common metal mask 100 more prone to deformation, and a small height difference between the first etched portion 15 and the bridge portion 14 would easily cause friction between the first etched portion 15 and the substrate 500 to be deposited even with slight undulations, some embodiments specify that the height difference between the first etched portion 15 and the bridge portion 14 is not less than 10 micrometers and not more than 25 micrometers. This appropriate height difference ensures sufficient spacing between the first etched portion 15 and the substrate 500 to be deposited, while maintaining the strength of the common metal mask 100, thus offsetting the height variations of the common metal mask 100.

[0095] In some embodiments, the height difference between the second etched portion 16 and the bridge portion 14 of the common metal mask 100 is not less than 40 micrometers and not more than 50 micrometers. Within this range, it is advantageous to have sufficient space on the second etched portion 16 to form raised solder joints, and it can also prevent the risk of insufficient strength due to the second etched portion 16 being too thin.

[0096] Based on the same inventive concept, as shown in Figures 6 and 10, embodiments of this application also provide a vapor deposition system, including a common metal mask 100 as provided in any of the above embodiments, and a substrate 500 to be vapor deposited.

[0097] The first surface 12 of the bridge portion 14 of the common metal mask plate 100 is bonded to the substrate 500 to be vapor-deposited.

[0098] A first cavity 300 is formed between the first etched portion 15 of the common metal mask 100 and the substrate 500 to be vaporized, and the first cavity 300 is connected to the vaporization opening 11 of the common metal mask 100.

[0099] A second cavity 400 is formed between the second etched portion 16 of the public metal mask 100 and the substrate 500 to be vaporized, and the second cavity 400 is in communication with the external environment.

[0100] In this embodiment, the common metal mask 100 and the substrate 500 to be deposited provided in any of the aforementioned embodiments are used. The specific structure and effects are similar to those in the aforementioned embodiments, and will not be repeated here. Moreover, in this embodiment, when the bridge portion 14 contacts and adheres to the substrate 500 to be deposited, there is a gap between the first etched portion 15 and the substrate 500 to be deposited, forming a first cavity 300. The first cavity 300 is connected to the first opening, so that the air pressure inside the first cavity 300 is approximately the same as the air pressure of the external environment. This reduces the difficulty of separating the common metal mask 100 and the substrate 500 to be deposited, and reduces the friction between the common metal mask 100 and the substrate 500 to be deposited.

[0101] Furthermore, when the bridge portion 14 contacts and adheres to the substrate 500 to be vaporized, there is a gap between the second etched portion 16 located at the edge of the peripheral area 110 and the substrate 500 to be vaporized, forming a second cavity 400. The second cavity 400 is connected to the external environment, so that the air pressure inside the second cavity 400 is approximately the same as the air pressure of the external environment. This reduces the difficulty of separating the common metal mask 100 from the substrate 500 to be vaporized and reduces the friction between the common metal mask 100 and the substrate 500 to be vaporized.

[0102] It should be noted that the external environment refers to the environment in which the public metal mask 100 and the substrate 500 to be vaporized are bonded, which may be a vacuum environment or a non-vacuum environment.

[0103] In some embodiments, the side of the substrate 500 to be vapor-deposited facing the common metal mask 100 has a circuit. The orthographic projection range of the circuit on the substrate 500 onto the common metal mask 100 does not overlap with the bridge portion 14. That is, the position of the bridge portion 14 on the common metal mask 100 avoids the position of the circuit on the substrate 500 to be vapor-deposited, which can prevent the bridge portion 14 from damaging the circuit on the substrate 500 to be vapor-deposited.

[0104] By applying the embodiments of this application, at least the following beneficial effects can be achieved:

[0105] (1) By dividing the common metal mask 100 into a peripheral area 110 and an opening area 120, and designing different structures for the peripheral area 110 and the opening area 120, the bonding area between the common metal mask 100 and the substrate 500 to be vaporized is reduced, thereby reducing the risk of the common metal mask 100 sticking to the substrate 500 to be vaporized, and thus reducing the friction between the common metal mask 100 and the substrate 500 to be vaporized, thereby reducing the risk of damage to the substrate 500 to be vaporized.

[0106] (2) The transition portion 17 connects the second etching portion 16 and the first etching portion 15. The thickness of the transition portion 17 changes gradually and uniformly to avoid abrupt changes in the thickness between the second etching portion 16 and the first etching portion 15, thereby avoiding stress abrupt changes between the second etching portion 16 and the first etching portion 15, and reducing the possibility of deformation of the common metal mask 100 due to stress abrupt changes.

[0107] (3) The first frame strip 121 and the second frame strip 122 intersect each other and are arranged in a longitudinal and transverse manner. The intersection of the first frame strip 121 and the second frame strip 122 coincides, and the area enclosed by the first frame strip 121 and the second frame strip 122 forms a vapor deposition opening 11. In the first frame strip 121, the first bridge portion 141 is similar to the first frame strip 121, both being strip-shaped and disposed in the middle area of ​​the first frame strip 121. In the second frame strip 122, the second bridge portion 142 is similar to the second frame strip 122, being strip-shaped and disposed in the middle area of ​​the second frame strip 122. Therefore, the first bridge portion 141 and the second bridge portion 142 can play a reinforcing role and can reduce the possibility of deformation of the first frame strip 121 and the second frame strip 122.

[0108] (4) The centroid of the common metal mask plate 100 is located on the first bridge portion 141 on the first frame strip 121 in the middle, which also helps to reduce the possibility of warping or deformation of the common metal mask plate 100.

[0109] (5) The first surface 12 of the first etched portion 15 and the first surface 12 of the second etched portion 16 have a discontinuity, and the first surface 12 of the transition portion 17 is inclined to transitionally connect the first surface 12 of the first etched portion 15 and the first surface 12 of the second etched portion 16 at both ends, so that the stress of the common metal mask plate 100 is uniformly transitioned to prevent deformation due to stress abrupt change.

[0110] Furthermore, the angle between the first surface 12 of the transition portion 17 and the first surface 12 of the first etched portion 15 is not less than 105 degrees and not more than 155 degrees, so that the junction of the transition portion 17 and the first etched portion 15 is obtuse, thereby reducing the possibility that the sharp point formed at the junction of the transition portion 17 and the first etched portion 15 may damage the vapor-deposited substrate 500.

[0111] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A public metal mask, characterized in that, It has a first surface and a second surface opposite to each other, the first surface being oriented toward the substrate to be vapor-deposited; The common metal mask includes: a peripheral area located at the edge and an opening area located inside the peripheral area; the opening area has multiple vapor deposition openings; the edges of the peripheral area and the opening area that are close to each other form the vapor deposition opening located at the end; along a direction parallel to the common metal mask, the portions of the peripheral area and the opening area located around the vapor deposition opening respectively include: a bridge portion and a first etched portion disposed sequentially close to the vapor deposition opening, the first surface of the bridge portion protruding from the first surface of the first etched portion for bonding with the substrate to be vapor-deposited; the first etched portion is configured to form a first cavity between itself and the substrate to be vapor-deposited, the first cavity communicating with the vapor deposition opening; the edge of the peripheral area away from the vapor deposition opening includes: a second etched portion; solder joints for welding frames are disposed within the second etched portion; the first surface of the first etched portion protruding from the first surface of the second etched portion; the second etched portion is configured to form a second cavity between itself and the substrate to be vapor-deposited, the second cavity communicating with the external environment.

2. The public metal mask plate according to claim 1, characterized in that, The peripheral area further includes a transition portion and the first etched portion; in the peripheral area, along the direction close to the opening area, the second etched portion, the transition portion, the first etched portion, the bridge portion and the first etched portion are connected in sequence, the two ends of the first surface of the transition portion are flush with the first surface of the second etched portion and the first surface of the first etched portion respectively, and the second surfaces of the second etched portion, the transition portion and the first etched portion are flush with each other.

3. The public metal mask plate according to claim 1, characterized in that, The opening area includes: a plurality of first frame strips, spaced apart along a first direction and extending along a second direction; a plurality of second frame strips, spaced apart along the second direction and extending along the first direction; the first direction and the second direction are perpendicular and parallel to the common metal mask; the two ends of the first frame strips and the two ends of the second frame strips are respectively connected to the peripheral area; the area enclosed by the first frame strips and the second frame strips forms the vapor deposition opening; the bridge portion includes: a first bridge portion extending along the second direction and a second bridge portion extending along the first direction, respectively disposed in the middle area of ​​the first frame strip and the middle area of ​​the second frame strip.

4. The public metal mask plate according to claim 3, characterized in that, Along the first direction, the first etched portion is provided on both sides of the first bridge portion of the first frame strip; along the second direction, the first etched portion is provided on both sides of the second bridge portion of the second frame strip.

5. The public metal mask plate according to claim 3, characterized in that, The centroid of the common metal mask plate is located on the first bridge portion of the first frame strip in the middle.

6. The public metal mask plate according to claim 2, characterized in that, The first surface of the transition portion is inclined, and the angle between it and the first surface of the first etched portion is not less than 105 degrees and not greater than 155 degrees.

7. The public metal mask plate according to claim 2, characterized in that, The wavy shape of the common metal mask is Wave, which is the ratio of wave height to wavelength per unit length; the protrusion height of the solder joint is H, and the height difference between the second etched portion and the bridge portion is D, satisfying the relationship: Wave + H <D。 8. The public metal mask plate according to claim 1, characterized in that, The first surface of the bridge portion includes a straight section and an inclined section; the inclined section is located at the edge where the bridge portion connects with the first etched portion; the angle between the inclined section and the straight section is not less than 105 degrees and not greater than 155 degrees.

9. The public metal mask plate according to claim 1, characterized in that, It also includes at least one of the following: the width of the bridge portion is not less than 200 micrometers and not more than 250 micrometers; the height difference between the first etched portion and the bridge portion is not less than 10 micrometers and not more than 25 micrometers; the height difference between the second etched portion of the common metal mask and the bridge portion is not less than 40 micrometers and not more than 50 micrometers.

10. A vapor deposition system, characterized in that, The invention includes a common metal mask as described in any one of claims 1-9, and a substrate to be vapor-deposited; a first surface of the bridge portion of the common metal mask is attached to the substrate to be vapor-deposited; a first cavity is formed between a first etched portion of the common metal mask and the substrate to be vapor-deposited, the first cavity communicating with the vapor deposition opening of the common metal mask; a second cavity is formed between a second etched portion of the common metal mask and the substrate to be vapor-deposited, the second cavity communicating with the external environment.

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