Silicon photonic chip monitoring method and apparatus, electronic device, and computer-readable storage medium

Abstract

The application relates to the technical field of optical communication, in particular to a silicon optical chip monitoring method and device, electronic equipment and a computer readable storage medium, the method comprising the following steps: acquiring an input monitoring value and an output monitoring value integrated by a silicon optical chip itself, wherein the input monitoring value is an input optical power value collected by an input monitoring photodiode integrated by the silicon optical chip itself, the output monitoring value is an output optical power value collected by an output monitoring photodiode integrated by the silicon optical chip itself, a power ratio parameter is calculated according to the input monitoring value and the output monitoring value, the power ratio parameter is compared with a preset ratio range, when it is detected that the power ratio parameter is not in the preset ratio range, it is determined that the silicon optical chip has an abnormal risk of optical extinction ratio, and a detection result containing the abnormal risk of optical extinction ratio is output, so that the real-time performance of abnormal detection of the optical extinction ratio of the silicon optical chip is improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of optical communication, in particular to a silicon optical chip monitoring method and device, electronic equipment and computer readable storage medium. BACKGROUND

[0002] In the field of optical communication, as the core component of optical module signal transmission, the optical performance stability of a silicon optical chip directly determines the data transmission quality. The OER extinction ratio (Optical Extinction Ratio) is a key indicator for evaluating the performance of the chip, and needs to meet the requirements of the industry's common MSA protocol (Multi-Source Agreement). That is, the OER extinction ratio should not exceed 5.5db when working normally.

[0003] At present, the detection and processing method for the OER extinction ratio of a silicon optical chip in the industry is to collect an optical eye diagram through a DCA device (Digital Communication Analyzer) to realize post-detection. This method cannot capture the abnormal risk of the optical extinction ratio of the silicon optical chip in real time, and often only intervenes after a fault occurs, which easily leads to an increase in the bit error rate of the silicon optical module and signal interruption, and affects the stable operation of high-speed silicon optical products such as 200G and 1.6T. In particular, in the data center scenario, the failure of the silicon optical module will directly cause the interruption of the business link, and the problem of real-time monitoring of the abnormality of the optical extinction ratio of the silicon optical chip needs to be solved.

[0004] The above content is only used to assist in understanding the technical solutions of the present application and does not represent the acknowledgement of the above content as prior art. SUMMARY

[0005] The main purpose of the present application is to provide a silicon optical chip monitoring method, device, electronic equipment and computer readable storage medium, which aims to improve the real-time performance of the abnormal detection of the optical extinction ratio of the silicon optical chip.

[0006] To achieve the above purpose, the present application provides a silicon optical chip monitoring method, which comprises:

[0007] Obtaining an input monitoring value and an output monitoring value integrated by the silicon optical chip itself, wherein the input monitoring value is an input optical power value collected by an input monitoring photodiode integrated by the silicon optical chip itself, and the output monitoring value is an output optical power value collected by an output monitoring photodiode integrated by the silicon optical chip itself;

[0008] According to the input monitoring value and the output monitoring value, a power ratio parameter is calculated;

[0009] The power ratio parameter is compared with a preset ratio range, and when it is detected that the power ratio parameter is not in the preset ratio range, it is determined that the silicon optical chip has an abnormal risk of optical extinction ratio.

[0010] The detection result indicating that the silicon optical chip has an abnormal risk of optical extinction ratio is output.

[0011] In addition, to achieve the above-mentioned purpose, the present application also provides a silicon optical chip monitoring device, which comprises:

[0012] The data acquisition module is configured to acquire input monitoring values and output monitoring values integrated by the silicon optical chip itself, wherein the input monitoring values are input optical power values collected by an input monitoring photodiode integrated by the silicon optical chip itself, and the output monitoring values are output optical power values collected by an output monitoring photodiode integrated by the silicon optical chip itself.

[0013] The data calculation module is configured to calculate a power ratio parameter according to the input monitoring values and the output monitoring values.

[0014] The parameter comparison module is configured to compare the power ratio parameter with a preset ratio range, and when it is detected that the power ratio parameter is not in the preset ratio range, it is determined that the silicon optical chip has an abnormal risk of optical extinction ratio.

[0015] The result output module is configured to output a detection result indicating that the silicon optical chip has an abnormal risk of optical extinction ratio.

[0016] In addition, to achieve the above-mentioned purpose, the present application also provides an electronic device, which comprises a memory, a processor, and a silicon optical chip monitoring program stored in the memory and executable on the processor, and when the silicon optical chip monitoring program is executed by the processor, the steps of the above-mentioned silicon optical chip monitoring method are realized.

[0017] In addition, to achieve the above-mentioned purpose, the present application also provides a computer readable storage medium, which stores a silicon optical chip monitoring program, and when the silicon optical chip monitoring program is executed by the processor, the steps of the above-mentioned silicon optical chip monitoring method are realized.

[0018] This application provides a silicon photonics chip monitoring method. This method acquires the input and output monitoring values ​​integrated within the silicon photonics chip itself. The input monitoring value is the input optical power value collected by the input monitoring photodiode integrated within the silicon photonics chip, and the output monitoring value is the output optical power value collected by the output monitoring photodiode integrated within the silicon photonics chip. This method enables real-time acquisition of optical power data directly from the chip without relying on external testing instruments, ensuring the real-time basis of anomaly detection from the data acquisition source. Based on the input and output monitoring values, a power ratio parameter is calculated, transforming discrete single-point optical power data into data that reflects the chip's optical power transmission matching characteristics in real time. The quantitative indicators provide core data for anomaly detection that is updated in real time and can be directly compared. By comparing the power ratio parameter with a preset ratio range, when the power ratio parameter is detected to be outside the preset ratio range, it is determined that there is a risk of optical extinction ratio anomaly in the silicon photonics chip. This enables dynamic anomaly identification based on real-time quantitative parameters, without manual intervention. It can locate the risk of optical extinction ratio anomaly as soon as the power ratio deviates from the normal range due to chip aging. The output includes the detection result of the presence of optical extinction ratio anomaly risk, ensuring that maintenance personnel or control systems can obtain risk information as soon as possible, thereby improving the real-time performance of anomaly detection of optical extinction ratio in silicon photonics chips. Attached Figure Description

[0019] Figure 1 This is a flowchart illustrating the first embodiment of the silicon photonics chip monitoring method of this application;

[0020] Figure 2 This is a schematic diagram of the optical power values ​​of the silicon photonics MPD input and output involved in this application;

[0021] Figure 3 This is a schematic diagram of the curve showing the change of the maximum optical power point when the ratio value involved in this application remains constant;

[0022] Figure 4 This is a schematic diagram of the silicon photonics chip monitoring device involved in the embodiments of this application;

[0023] Figure 5 This is a schematic diagram of the structure of the electronic device involved in the embodiments of this application.

[0024] The realization of the purpose, functional features and advantages of this application will be further explained in conjunction with the embodiments and with reference to the accompanying drawings. Detailed Implementation

[0025] This application provides a silicon photonics chip monitoring method, referring to... Figure 1 As shown, Figure 1 This is a flowchart illustrating the first embodiment of the silicon photonics chip monitoring method of this application.

[0026] The exemplary embodiments will be described in detail hereinbelow with reference to the drawings. In the following description, the same numbers refer to the same or similar elements unless otherwise represented. The implementations described in the following exemplary embodiments are not meant to represent all implementations consistent with the present application.

[0027] In the field of optical communication, silicon optical chips are the core of optical module signal transmission, and the OER extinction ratio thereof needs to meet the MSA protocol (≤5.5db) to ensure the quality of data transmission. At present, the industry often uses DCA equipment to collect optical eye diagrams to detect the OER extinction ratio. This method is a post-detection method, which cannot capture the OER abnormal risk in real time during the operation of the chip, and often handles the fault after it occurs, which easily leads to the increase of the bit error rate of high-speed silicon optical modules, signal interruption, and even causes the interruption of data center service links, and the problem of real-time monitoring of the abnormality of the optical extinction ratio of the silicon optical chip needs to be solved.

[0028] The present application provides a silicon optical chip monitoring method, device, electronic equipment and computer readable storage medium, which realizes real-time detection of the abnormality of the optical extinction ratio of the silicon optical chip.

[0029] It should be noted that the execution subject of the present embodiment can be a computing service device with data processing, network communication and program running functions, such as a device capable of realizing the above functions, such as an electronic device. The present embodiment and the following embodiments will be described below taking an electronic device as an example.

[0030] The silicon optical chip monitoring method of the present application comprises the following implementation steps S10 to S40.

[0031] Step S10: obtaining input monitoring values and output monitoring values integrated by the silicon optical chip itself, wherein the input monitoring values are input optical power values collected by input monitoring photodiodes integrated by the silicon optical chip itself, and the output monitoring values are output optical power values collected by output monitoring photodiodes integrated by the silicon optical chip itself;

[0032] As an example, the silicon optical chip monitoring method of the present application can be applied to high-speed optical communication transmission scenarios or high-density data interaction scenarios, such as real-time performance monitoring of 200G / 1.6T / 3.2T silicon optical modules, and is suitable for application scenarios with high requirements for the optical extinction ratio stability of silicon optical chips, such as data center internal interconnection, long-distance trunk communication, enterprise-level core network, etc., to ensure that the OER abnormal risk caused by chip aging is identified in time, and to ensure the quality of optical signal transmission and system operation reliability.

[0033] Optionally, the silicon optical PIC (Photonic Integrated Circuit, optical integrated circuit, i.e. silicon optical chip), MPD In (Monitoring Photodiode Input, input monitoring photodiode, integrated in the silicon optical PIC, used to collect the input optical power of the chip), MPD Out (Monitoring Photodiode Output, output monitoring photodiode, integrated in the silicon optical PIC, used to collect the output optical power of the chip), OER (Optical Extinction Ratio, optical extinction ratio, a key indicator for evaluating the performance of the silicon optical chip, which needs to meet the requirements of the MSA protocol (Multi-Source Agreement, multi-source agreement), and the normal working time is usually not more than 5.5db), DCA device (Digital Communication Analyzer, digital communication analyzer, a device in the prior art for offline collection of optical eye diagram to detect OER).

[0034] Optionally, the optical eye diagram of the test TX silicon optical OER extinction ratio shows that when the DCA test OER extinction ratio is about 4db, the performance of the silicon optical chip is good; when the OER extinction ratio exceeds the MSA protocol requirement of 5.5db or even reaches 7db, it indicates that the silicon optical chip has signs of aging.

[0035] Optionally, as shown in Figure 2 , Figure 2 is a schematic diagram of the optical power values of the MPD input and output of the silicon optical chip involved in the present application. The transmission and monitoring architecture of the optical power values of the MPD input and output of the silicon optical chip itself is suitable for high-speed optical communication scenarios. In the system, a single-mode wavelength 1310-1550nm DFB laser is used as a light source, which is transmitted to an isolator through a lens, and then input into the silicon optical chip. The output end of the silicon optical chip is sequentially output through a lens and an FA (fiber amplifier), and then output through an MPO optical port. At the same time, the silicon optical chip integrates MPD In (input monitoring photodiode) and MPD Out (output monitoring photodiode): MPD In collects the input optical power of the chip, and MPD Out monitors the output 2dbm optical power (including the 2dBm power of the silicon optical chip). The data of the two is connected to the MCUAD acquisition module to realize real-time acquisition of optical power and subsequent ratio value calculation, to provide a data basis for abnormal risk monitoring of OER caused by aging of the silicon optical chip, and to support performance monitoring of 200G / 1.6T silicon optical modules.

[0036] Optionally, the embodiment is applied to a high-speed silicon optical module running scenario, and the silicon optical chip itself integrates an input monitoring photodiode (MPD In) and an output monitoring photodiode (MPD Out), wherein the MPD In is used to collect an input optical power value at the input end of the chip, and the MPD Out is used to collect an output optical power value at the output end of the chip.

[0037] Optionally, in this scenario, the prior art needs to collect an optical eye diagram detection optical extinction ratio (OER) offline through a DCA device, and the embodiment directly obtains the input optical power value collected by the MPD In and the output optical power value collected by the MPD Out integrated in the silicon optical chip itself; a power ratio parameter is calculated based on these optical power values, and the parameter includes but is not limited to a ratio of the output optical power value to the input optical power value; the parameter is compared with a preset ratio range, if the parameter is not in the range, it is determined that the chip has an OER abnormal risk; and a detection result containing the risk is output.

[0038] Optionally, the MPD Out can monitor the silicon optical chip output 2dbm optical power in real time, and the MPD In synchronously collects the chip input end optical power data to provide accurate original parameters for ratio value calculation.

[0039] The embodiment has the beneficial effect that the chip optical power data can be obtained in real time without relying on external devices, real-time monitoring of OER abnormalities is realized, and the problem of fault expansion caused by post-detection in the prior art is avoided.

[0040] Optionally, on the basis described above, the input monitoring point and the output monitoring point integrated in the silicon optical chip itself are determined, real-time data collection is performed thereon, collected data of at least two input monitoring points are randomly selected as input optical power values, and collected data of corresponding output monitoring points are selected as output optical power values; a mapping corresponding relationship of the input and output optical power values is established to obtain at least two groups of monitoring value corresponding groups; a chip model parameter is obtained, a matching target ratio calculation algorithm is determined through a preset mapping relationship of the model parameter and the ratio calculation algorithm (including but not limited to a corresponding table of the model and the ratio formula), and the algorithm operation is performed on each monitoring value corresponding group to obtain a power ratio parameter.

[0041] The embodiment has the beneficial effect that the accuracy of the power ratio parameter is improved through the multiple monitoring value and model matching algorithm, and the monitoring needs of different models of silicon optical chips are adapted.

[0042] Step S20: a power ratio parameter is calculated according to the input monitoring value and the output monitoring value;

[0043] Optionally, the prior art needs to collect the optical eye diagram detection OER through the DCA device offline, and the embodiment directly obtains the input optical power value (such as a monitoring value of 0.4 dbm) collected by the MPD In integrated in the silicon optical PIC and the output optical power value (such as a monitoring value of 2 dbm) collected by the MPD Out; the collection data of at least two input monitoring points are randomly selected as the input optical power value, and the collection data of the corresponding output monitoring point are selected as the output optical power value; a mapping corresponding relationship of the input and output optical power values is established, and at least two groups of monitoring value corresponding groups are obtained; the model parameters of the silicon optical PIC are obtained, a mapping relationship (including but not limited to a corresponding table of a 200G model corresponding to an "output optical power value / input optical power value" and a 1.6T model corresponding to a special ratio formula) of the preset model parameters and the ratio calculation algorithm is determined, a matched target ratio calculation algorithm is determined, the algorithm operation is performed on each group of monitoring value corresponding groups, and a power ratio parameter (an initial calibration power ratio of a certain model is 0.4, and a normal range includes but is not limited to 0.2-0.6, the range is an example, and different models of different manufacturers can be 0.27 or 0.4-0.8, etc.).

[0044] Optionally, on the basis of the above, the initial calibration power ratio value (factory calibration standard power ratio value) corresponding to the silicon optical PIC model parameter is obtained, and a preset variation threshold (such as 50%, when the variation is greater than the threshold, the silicon optical PIC has an aging failure risk); taking the initial calibration power ratio value as a reference, the variation threshold is floated up and down to form a preset ratio range (such as an initial calibration ratio of 0.4, a threshold of 0.2, and a range of 0.2-0.6, when the power ratio parameter is less than 0.2, it is determined to be abnormal); the actual variation (the absolute value of the difference between the two, such as the current ratio of 0.2, the variation is 0.2) of the power ratio parameter and the initial calibration power ratio value is calculated; if the power ratio parameter exceeds the preset range or the actual variation is greater than the threshold, it is determined that the silicon optical PIC has an OER abnormal risk (such as OER=7.0db); the risk determination conclusion, the power ratio parameter, the actual variation and the model parameter are integrated into the initial detection result, which is classified and labeled according to the preset information labeling rule and the risk level (high / low) is determined, and the result is output through real-time visual display, local data storage or transmission to external control equipment (including but not limited to the three ways); the current optical power values of MPD In and MPD Out are re-collected, the target ratio parameter is calculated by the target ratio calculation algorithm, and the current power ratio parameter of the silicon optical PIC is adjusted to the target value (such as OER=4.5db after adjustment, such as the bit error rate is reduced, such as the CH4 channel bit error rate is reduced from 1.26E-07 to 1.88E-11) by a software algorithm at one time; based on the OER abnormal risk level, it is judged whether the silicon optical PIC after adjustment meets the preset optical performance standard (including OER threshold, bit error rate threshold, different rate products have different test conditions, such as single wave 100G supports 0-70℃, single wave 200G does not support 0℃, transmission distance includes 500 meters, 2km, 10km, etc.), if not, re-collect, the number of times is not more than 3.

[0045] Optionally, as shown in Figure 3 Figure 3 ​A schematic diagram of the change curve of the maximum optical power point when the ratio value involved in the present application remains unchanged, wherein the horizontal axis X is the optical power distribution interval, and the vertical axis Y is the optical power intensity; two curves are included, corresponding to the optical power distribution states before and after the aging of the silicon optical chip respectively: the curve before aging has a higher peak value, representing that the maximum optical power point is at a more optimal level; the curve after aging has a lower peak value and a morphological shift, indicating that the silicon optical chip has performance degradation due to aging, even if the ratio value does not change, the actual output maximum optical power will still decrease; specifically, the aging of the silicon optical chip will cause the internal optical transmission characteristics to deteriorate, even if the power ratio parameter (ratio) is maintained within the initial range, the absolute value distribution of the optical power will also abnormally shift, ultimately affecting the transmission quality of the optical signal, and even causing OER extinction ratio abnormalities, indicating the hidden risks of silicon optical chip aging, and also verifying that relying only on the ratio value to determine the performance has limitations, and comprehensive monitoring needs to be combined with the actual distribution state of the optical power.

[0046] The embodiment does not need to rely on peripheral devices such as DCA, but uses the MPD In and MPD Out integrated in the silicon optical PIC to collect optical power data in real time, and realizes real-time monitoring and parameter calibration of OER abnormalities caused by silicon optical PIC aging through a model matching algorithm and dynamic adjustment logic, which adapts to the monitoring needs of silicon optical chips of different manufacturers and different rates, avoids the problems of module bit error rate increase, signal interruption and data center service link interruption caused by after-detection of the prior art, and directly causes OER extinction ratio abnormalities when the ratio value changes too much. The embodiment can effectively prevent the ratio value change caused by silicon optical chip aging, and thus avoid the problem of OER extinction ratio abnormalities.

[0047] Step S30: comparing the power ratio parameter with the preset ratio range, and determining that the silicon optical chip has an optical extinction ratio abnormal risk when it is detected that the power ratio parameter is not in the preset ratio range;

[0048] Optionally, the initial calibration power ratio (the standard power ratio calibrated by the silicon optical PIC when it leaves the factory), the change threshold (the maximum amplitude of the deviation of the power ratio from the initial calibration value, such as 50%), the preset ratio range (an interval formed by the initial calibration ratio and the upper and lower floating change threshold, such as 0.2-0.6 when the initial 0.4 and the threshold 0.2), and the actual change amount (the absolute value of the difference between the power ratio parameter and the initial calibration ratio).

[0049] Optionally, the input optical power value collected by the MPD In integrated in the silicon optical PIC and the output optical power value collected by the MPD Out are obtained; at least two input monitoring point data are randomly selected as the input optical power value, and corresponding output monitoring point data are selected as the output optical power value; a mapping corresponding relationship between the two is established to obtain at least two groups of monitoring value corresponding groups; the model parameters of the silicon optical PIC are obtained, and a matching target ratio calculation algorithm is determined through a preset mapping relationship between the model parameters and the ratio calculation algorithm (including but not limited to a corresponding table of the model and the ratio formula); the algorithm operation is performed on each monitoring value corresponding group to obtain the power ratio parameter.

[0050] In another embodiment, on the basis of the above, the initial calibration power ratio corresponding to the model of the silicon optical PIC (such as 0.4) and the preset variation threshold (such as 50%) are obtained; the initial calibration ratio is taken as a reference, and the variation threshold is floated up and down to form a preset ratio range (such as 0.2-0.6); the actual variation of the power ratio parameter and the initial calibration ratio (such as the variation is 0.2 when the current ratio is 0.2) is calculated; if the power ratio parameter is out of the preset range or the actual variation is greater than the threshold, it is determined that the silicon optical PIC has an abnormal risk of OER (such as OER=7.0db); the risk judgment conclusion, the power ratio parameter, the actual variation and the model parameter are integrated into an initial detection result, which is classified and labeled according to a preset information labeling rule and a risk level is determined, and the result is displayed in real time, stored locally or transmitted to an external control device; the current optical power values of the MPD In and the MPD Out are re-collected, the target ratio parameter is calculated using the target ratio calculation algorithm, and the current power ratio parameter of the silicon optical PIC is adjusted to a target value (such as the adjusted OER=4.5db is normal, and the bit error rate is reduced) by a software algorithm at one time; whether the silicon optical PIC after adjustment meets the preset standard of optical performance is judged based on the abnormal risk level of OER, and if not, the collection is re-collected, and the number of times is not more than 3.

[0051] In this embodiment, the optical power data is collected in real time by the MPD In and the MPD Out integrated in the silicon optical PIC, and the OER abnormality caused by the aging of the silicon optical PIC is identified in real time through the model matching algorithm and the dynamic threshold comparison, which is suitable for silicon optical chips of different manufacturers and different rates, and avoids the module failure and service interruption caused by the post-detection of the prior art.

[0052] Step S40: outputting a detection result indicating that the silicon optical chip has an abnormal risk of optical extinction ratio;

[0053] Optionally, the optical extinction ratio abnormal risk (such as the risk of the silicon optical chip exceeding the MSA protocol ≤5.5db standard due to aging), the initial detection result (such as the integrated risk judgment conclusion, the power ratio parameter, the actual change amount, and the basic information set of the model parameter), the preset information labeling rule (including but not limited to the rule of labeling according to "product identification-detection data-risk level"), and the preset output mode (including but not limited to real-time visual display, local data storage, and transmission to external control equipment).

[0054] Optionally, the input optical power value collected by the MPD In integrated in the silicon optical chip and the output optical power value collected by the MPD Out are obtained, the power ratio parameter is calculated, the parameter is compared with the preset ratio range, and if it is not in the range, it is determined that the chip has an optical extinction ratio abnormal risk; the risk judgment conclusion, the power ratio parameter, the actual change amount, and the chip model parameter are integrated into the initial detection result; the initial detection result is labeled according to the preset information labeling rule, the risk level is determined and labeled synchronously, and the labeled detection result is obtained; and the detection result is output through the preset output mode.

[0055] Optionally, the initial detection result includes the conclusion that a certain model chip "has an optical extinction ratio abnormal risk", the power ratio parameter 0.7, the actual change amount 0.3, and the model parameter 200G; according to the preset information labeling rule, the model parameter is labeled as "product identification: 200G silicon optical module", the power ratio parameter and the actual change amount are labeled as "detection data: ratio=0.7, change amount=0.3", and the risk level is labeled as "high risk"; the result is output through real-time visual display, and the current optical power values of MPDIn and MPDOut are re-collected, the target ratio parameter is calculated using the target ratio calculation algorithm, the chip power ratio parameter is adjusted by software algorithm at one time, it is judged whether the adjusted chip meets the optical performance preset standard, and if not, it is re-collected, and the number of times is not more than 3.

[0056] The embodiment realizes real-time risk information acquisition of operation and maintenance personnel or control system, timely intervention of optical extinction ratio abnormality, avoids the problems of module bit error rate increase and service interruption caused by after-detection in the prior art, and adapts to the monitoring needs of silicon optical chips of different manufacturers and different rates.

[0057] The embodiment realizes real-time collection of optical power data from the chip end without relying on external detection instruments, and guarantees the real-time basis of abnormal detection from the data collection source, by acquiring input monitoring values and output monitoring values integrated by the silicon optical chip, wherein the input monitoring values are input optical power values collected by an input monitoring photodiode integrated by the silicon optical chip, and the output monitoring values are output optical power values collected by an output monitoring photodiode integrated by the silicon optical chip; the power ratio parameter is calculated according to the input monitoring values and the output monitoring values, the discrete single-point optical power data is converted into a quantitative index that can reflect the chip optical power transmission matching characteristics in real time, and the real-time updated and directly comparable core data basis is provided for abnormal judgment; the power ratio parameter is compared with the preset ratio range, when it is detected that the power ratio parameter is not in the preset ratio range, it is determined that the silicon optical chip has an optical extinction ratio abnormal risk, the dynamic abnormal recognition based on the real-time quantitative parameter is realized, manual intervention is not needed, and the optical extinction ratio abnormal risk can be located at the first time when the chip aging causes the power ratio to deviate from the normal range; and the detection result containing the optical extinction ratio abnormal risk is output, so that the maintenance personnel or the control system can obtain the risk information at the first time, and the real-time abnormal detection of the optical extinction ratio of the silicon optical chip is realized.

[0058] Further, based on the above content, the second embodiment of the silicon optical chip monitoring method is proposed. In some feasible embodiments, the system includes a target detection model, and the step S10 includes the following implementation steps B201-B202.

[0059] Step B201: determining an input monitoring point and an output monitoring point integrated by the silicon optical chip, wherein the input monitoring point is used to collect parameter data of an input end of the silicon optical chip, and the output monitoring point is used to collect parameter data of an output end of the silicon optical chip.

[0060] Step B202: performing real-time data collection on the input monitoring point and the output monitoring point, randomly selecting collected data of at least two input monitoring points as input monitoring values, and selecting collected data of the output monitoring points corresponding to the input monitoring points as output monitoring values.

[0061] Optionally, the input monitoring point (a functional point integrated in the silicon optical chip and used to collect input end parameter data, corresponding to an MPD In (Monitor Photodiode Input)), the output monitoring point (a functional point integrated in the silicon optical chip and used to collect output end parameter data, corresponding to an MPD Out (Monitor Photodiode Output)), the input monitoring value (parameter data collected from the input monitoring point, including but not limited to an optical power value), and the output monitoring value (parameter data collected from the output monitoring point, including but not limited to an optical power value).

[0062] Optionally, determine the input monitoring points and the output monitoring points integrated by the silicon optical chip itself, the input monitoring points are used to collect the optical power data of the chip input end, and the output monitoring points are used to collect the optical power data of the chip output end; real-time data collection is performed on the input monitoring points and the output monitoring points, the collected data of at least two input monitoring points are randomly selected as input monitoring values, and the collected data of the output monitoring points corresponding to the input monitoring points are selected as output monitoring values; a mapping corresponding relationship between the input monitoring values and the output monitoring values is established, and at least two groups of monitoring value corresponding groups are obtained; a chip model parameter is acquired, a matching target ratio calculation algorithm is determined through a preset mapping relationship between the model parameter and the ratio calculation algorithm (including but not limited to an optical power ratio formula corresponding to different models), and the algorithm operation is performed on each monitoring value corresponding group to obtain a power ratio parameter; if the parameter variation is greater than 50% (for example, the initial ratio is 0.4, and the current ratio is 0.2), it is determined that the chip has an optical extinction ratio abnormal risk, such as a scene of silicon light aging CH4 abnormal OER=7.0db.

[0063] In the embodiment, multiple groups of data are collected through the monitoring points integrated in the chip, the accuracy of the power ratio parameter is improved, the monitoring needs of different models of silicon optical chips are adapted, the error problem caused by the existing technology in dependence on an external device to collect a single group of data is avoided, and a more reliable quantitative basis is provided for subsequent abnormal determination.

[0064] Further, based on the above content, in some feasible embodiments, the above step S20 includes the following implementation steps C301-C303.

[0065] Step C301: based on the input monitoring points and the output monitoring points, a mapping corresponding relationship between each group of input monitoring values and output monitoring values is established, and at least two groups of monitoring value corresponding groups are obtained;

[0066] Step C301: a model parameter of the silicon optical chip is acquired, and a target ratio calculation algorithm matched with the model parameter is determined through a preset mapping relationship between the model parameter and the ratio calculation algorithm;

[0067] Step C301: for each monitoring value corresponding group in the at least two groups of monitoring value corresponding groups, numerical operation is performed according to the target ratio calculation algorithm, and a power ratio parameter of the silicon optical chip is obtained.

[0068] Optionally, the monitoring value corresponding group (a mapping relationship set of each group of input monitoring values and output monitoring values), the mapping relationship between the model parameter and the ratio calculation algorithm (including but not limited to an optical power ratio calculation rule corresponding to different silicon optical chip models), and the target ratio calculation algorithm (a power ratio operation rule matched with the silicon optical chip model).

[0069] Optionally, based on the input monitoring points and output monitoring points integrated by the silicon optical chip itself, a mapping corresponding relationship of each group of input monitoring values and output monitoring values is established, at least two groups of monitoring value corresponding groups are obtained; the model parameters of the silicon optical chip are acquired, a matching target ratio calculation algorithm is determined through a preset mapping relationship between the model parameters and the ratio calculation algorithm (such as the operation rule of “output optical power value / input optical power value” corresponding to the 200G model); for each group of monitoring value corresponding groups in the at least two groups of monitoring value corresponding groups, numerical operation is performed according to the target ratio calculation algorithm, and a power ratio parameter of the silicon optical chip is obtained; if the parameter variation is greater than 50% (such as the initial ratio 0.4 and the current ratio 0.2), it is determined that the chip has an optical extinction ratio abnormal risk, such as the scene of silicon light aging CH4 abnormal OER=7.0db.

[0070] The beneficial effects of the embodiment are that by establishing a mapping relationship of multiple groups of monitoring values and a model matching algorithm, the accuracy and adaptability of the power ratio parameter are improved, reliable quantitative basis is provided for aging monitoring of silicon optical chips of different manufacturers and different rates, and the misjudgment problem caused by single group data or general algorithm in the prior art is avoided.

[0071] Further, based on the above content, in some feasible embodiments, the step of step S30 further includes the following implementation steps D401 to D404.

[0072] Step D401: acquiring an initial calibrated power ratio corresponding to the model parameters of the silicon optical chip, and acquiring a preset variation threshold;

[0073] Step D402: taking the initial calibrated power ratio as a reference value, and floating the reference value up and down by the variation threshold to form a preset ratio range;

[0074] Step D403: calculating the actual variation of the power ratio parameter and the initial calibrated power ratio, wherein the actual variation is the absolute value of the difference between the power ratio parameter and the initial calibrated power ratio;

[0075] Step D404: when it is detected that the power ratio parameter is greater than the preset ratio range or the actual variation is greater than the preset variation threshold, it is determined that the silicon optical chip has an optical extinction ratio abnormal risk.

[0076] Optionally, the initial calibrated power ratio (standard power ratio marked by the silicon optical chip at the factory), the variation threshold (the maximum amplitude of the power ratio deviating from the initial calibrated value, such as 50%), the preset ratio range (the interval formed by floating the initial calibrated ratio up and down by the variation threshold, such as the range of 0.2-0.6 when the initial value is 0.4 and the threshold is 0.2), and the actual variation (the absolute value of the difference between the power ratio parameter and the initial calibrated value).

[0077] Optionally, an initial calibration power ratio (such as 0.4) corresponding to the silicon optical chip model parameter is obtained, and a preset variation threshold (such as 50%) is obtained; taking the initial calibration power ratio as a reference value, the reference value is floated up and down by the variation threshold to form a preset ratio range (such as 0.2-0.6); the actual variation (such as 0.2 when the current ratio is 0.2) of the power ratio parameter and the initial calibration power ratio is calculated; when it is detected that the power ratio parameter is greater than the preset ratio range, or the actual variation is greater than the preset variation threshold, it is determined that the silicon optical chip has an optical extinction ratio abnormal risk.

[0078] Optionally, the silicon optical aging may occur in the case that the ratio does not change but the maximum optical power point changes, such as the ratio is 0.25 before adjustment and the ratio is 0.4 after adjustment in a certain scene, the optical power transmission characteristics of the silicon optical chip can be restored.

[0079] The embodiment realizes the quantitative determination of the optical extinction ratio abnormal risk of the silicon optical chip through dynamic threshold comparison, adapts to the aging monitoring needs of different models of chips, avoids the misjudgment problem caused by relying on manual experience judgment in the prior art, and provides accurate basis for subsequent abnormal intervention.

[0080] Further, based on the content of any of the above embodiments, in some feasible embodiments, the above step D401 further includes the following implementation steps E501-E502.

[0081] Step E501: based on the model parameter of the silicon optical chip, a mapping relationship between a preset model parameter and a variation threshold is queried;

[0082] Step E502: if a target preset variation threshold matching the model parameter is queried, the target preset variation threshold is taken as the preset variation threshold.

[0083] Optionally, the model parameter and the variation threshold mapping relationship (including but not limited to a variation threshold comparison table corresponding to different silicon optical chip models), and the target preset variation threshold (the variation threshold matching the silicon optical chip model).

[0084] Optionally, if a target preset variation threshold matching the model parameter is queried, the threshold is taken as the preset variation threshold; taking the initial calibration power ratio corresponding to the silicon optical chip model as a reference, the variation threshold is floated up and down to form a preset ratio range; the actual variation of the power ratio parameter and the initial calibration power ratio is calculated, and if the actual variation is greater than the threshold, it is determined that the silicon optical chip has an optical extinction ratio abnormal risk.

[0085] The embodiment realizes accurate determination of aging risks of silicon optical chips of different manufacturers and different rates through a model-matched change threshold, avoids misjudgment or missed judgment caused by the use of a general threshold in the prior art, and improves the adaptability and accuracy of aging monitoring.

[0086] Further, based on the content of any of the above embodiments, in some feasible embodiments, in the silicon optical chip monitoring method, step S40 further includes the following implementation steps F501 to F503.

[0087] Step F501: integrate the determination conclusion of the silicon optical chip existing optical extinction ratio abnormal risk, the power ratio parameter, the actual change amount, and the model parameter into an initial detection result;

[0088] Step F502: classify and label the information in the initial detection result according to a preset information labeling rule, and determine and label the optical extinction ratio abnormal risk level of the silicon optical chip synchronously in the labeling process to obtain a classified and labeled detection result;

[0089] Step F503: output the classified and labeled detection result through a preset output mode, wherein the preset output mode includes at least one of real-time visual display, local data storage, or transmission to an external control device.

[0090] Optionally, the initial detection result (an information set integrating the optical extinction ratio abnormal risk determination conclusion, the power ratio parameter, the actual change amount, and the model parameter), the preset information labeling rule (including but not limited to a rule of classifying and labeling according to “risk level-data parameter-product model”), and the preset output mode (including but not limited to a mode of real-time visual display, local data storage, or transmission to an external control device).

[0091] Optionally, the determination conclusion of the silicon optical chip existing optical extinction ratio abnormal risk, the power ratio parameter (such as 0.7), the actual change amount (such as 0.3), and the model parameter (such as 200G) are integrated into an initial detection result; the information in the initial detection result is classified and labeled according to a preset information labeling rule, and the optical extinction ratio abnormal risk level (such as high risk) of the silicon optical chip is determined and labeled synchronously to obtain a classified and labeled detection result; and the detection result is output through a preset output mode (such as real-time visual display).

[0092] The embodiment realizes intuitive presentation of the optical extinction ratio abnormal risk through structured information integration and multi-channel output, facilitates timely intervention by operation and maintenance personnel or a control system, avoids fault handling lag caused by scattered information in the prior art, and adapts to the monitoring needs of silicon optical chips of different manufacturers and different rates.

[0093] Further, based on the content of any of the above embodiments, in some possible embodiments, the silicon optical chip monitoring method further comprises the following steps J601-J605 after step S40.

[0094] Step J601: based on the input monitoring point and the output monitoring point and the determined optical extinction ratio abnormal risk, re-acquire the current input monitoring value of the input monitoring point and the current output monitoring value of the output monitoring point, and calculate the target ratio parameter of the current input monitoring value and the current output monitoring value by a target ratio calculation algorithm.

[0095] Step J602: obtain the optical performance preset standard corresponding to the model parameter, adjust the power ratio parameter of the silicon optical chip to the target power ratio parameter, and obtain the silicon optical chip after the power ratio parameter adjustment.

[0096] Step J603: based on the optical extinction ratio abnormal risk level, determine the target abnormal risk level of the adjusted silicon optical chip, and judge whether the adjusted silicon optical chip meets the optical performance preset standard based on the target abnormal risk level.

[0097] Step J604: if the optical performance preset standard is met, the result of the silicon optical chip power ratio parameter adjustment being completed and the optical performance meeting the standard is obtained.

[0098] Step J605: if the optical performance preset standard is not met, re-acquire the current data of the input monitoring point and the output monitoring point until the result of the silicon optical chip power ratio parameter adjustment being completed and the optical performance meeting the standard is obtained.

[0099] Optionally, the target ratio calculation algorithm (including but not limited to the division operation algorithm of the input monitoring value and the output monitoring value), the optical performance preset standard (including but not limited to the power ratio qualified range corresponding to different silicon optical chip models), the target power ratio parameter (the power ratio parameter to be reached after adjustment), and the target abnormal risk level (the risk level determined based on the state of the adjusted silicon optical chip).

[0100] Optionally, based on the input monitoring point and the output monitoring point and the determined optical extinction ratio abnormal risk, re-acquire the current input monitoring value and the current output monitoring value, calculate the target ratio parameter by a target ratio calculation algorithm, obtain the optical performance preset standard corresponding to the model parameter (such as the power ratio range of 0.2-0.6 corresponding to the 200G model), adjust the power ratio parameter of the silicon optical chip to the target power ratio parameter, and obtain the adjusted silicon optical chip. Based on the optical extinction ratio abnormal risk level, determine the updated target abnormal risk level, and judge whether the adjusted silicon optical chip meets the optical performance preset standard. If it meets, the result of the adjustment being completed and the optical performance meeting the standard is obtained. If it does not meet, re-acquire the data until it meets the standard.

[0101] Optionally, after optimization of the ratio, the BER error rate of the link transmission is significantly reduced, and specific data includes but is not limited to: CH1 before optimization SER 3.58E-10, after optimization 5.23E-13; CH2 before optimization SER 3.19E-07, after optimization 1.88E-11; CH3 before optimization SER 5.97E-09, after optimization 3.76E-11; CH4 before optimization SER 1.26E-07, after optimization 1.88E-11.

[0102] The embodiment realizes accurate recovery of the optical performance of the silicon optical chip through closed-loop adjustment and standard achievement determination, avoids the performance instability problem caused by no verification after adjustment in the prior art, and adapts to the performance repair needs of silicon optical chips of different manufacturers and different rates after aging.

[0103] In addition, the application also provides a silicon optical chip monitoring device, please refer to Figure 4 , Figure 4 is a structural schematic diagram of a silicon optical chip monitoring device involved in the embodiment scheme of the application. The silicon optical chip monitoring device provided by the application comprises:

[0104] The data acquisition module H01 is configured to acquire an input monitoring value and an output monitoring value integrated by the silicon optical chip, wherein the input monitoring value is an input optical power value collected by an input monitoring photodiode integrated by the silicon optical chip, and the output monitoring value is an output optical power value collected by an output monitoring photodiode integrated by the silicon optical chip.

[0105] The data calculation module H02 is configured to calculate a power ratio parameter according to the input monitoring value and the output monitoring value.

[0106] The parameter comparison module H03 is configured to compare the power ratio parameter with a preset ratio range, and determine that the silicon optical chip has an abnormal risk of optical extinction ratio when it is detected that the power ratio parameter is not in the preset ratio range.

[0107] The result output module H04 is configured to output a detection result indicating that the silicon optical chip has an abnormal risk of optical extinction ratio.

[0108] The silicon optical chip monitoring device provided by the application adopts the silicon optical chip monitoring method in the above embodiment, and can solve the problem that the abnormality of the optical extinction ratio of the silicon optical chip cannot be monitored in real time. Compared with the prior art, the beneficial effects of the silicon optical chip monitoring system provided by the application are the same as those of the silicon optical chip monitoring method provided by the above embodiment, and other technical features in the silicon optical chip monitoring system are the same as those disclosed in the previous embodiment method, which will not be repeated here.

[0109] In addition, the application also provides an electronic device. Please refer to Figure 5 ,Figure 5 FIG. 1 is a structural schematic diagram of an electronic device according to an embodiment of the present application.

[0110] The present application provides an electronic device, comprising: at least one processor; a memory in communication connection with the at least one processor; wherein the memory stores instructions executable by the at least one processor, and the instructions are executed by the at least one processor to enable the at least one processor to perform the silicon optical chip monitoring method in the embodiment one.

[0111] Reference will be made to the following Figure 5 , Figure 5 FIG. 1 is a structural schematic diagram of an electronic device according to an embodiment of the present application, which shows a structural schematic diagram of an electronic device suitable for implementing the embodiments of the present application. Figure 5 The electronic device shown is merely an example and should not impose any limitation on the functions and use range of the embodiments of the present application.

[0112] As Figure 5 shown, the electronic device can include a processing device 1001 (for example, a central processor, a graphics processor, etc.), which can perform various appropriate actions and processes according to programs stored in a read-only memory (ROM) 1002 or loaded from a storage device 1003 into a random access memory (RAM) 1004. In the RAM 1004, various programs and data required for the operation of the electronic device are also stored. The processing device 1001, the ROM 1002, and the RAM 1004 are connected to each other through a bus 1005. An input / output (I / O) interface 1006 is also connected to the bus. Generally, the following devices can be connected to the I / O interface 1006: input devices 1007 including, for example, a touch screen, a touchpad, a keyboard, a mouse, an image sensor, a microphone, an accelerometer, a gyroscope, etc.; output devices 1008 including, for example, a liquid crystal display (LCD), a speaker, a vibrator, etc.; the storage device 1003 including, for example, a magnetic tape, a hard disk, etc.; and a communication device 1009. The communication device 1009 can allow the electronic device to communicate with other devices wirelessly or by wire to exchange data. Although the electronic device with various devices is shown in the figure, it should be understood that it is not required to implement or have all the devices shown. More or fewer devices can be alternatively implemented or provided.

[0113] In particular, according to the embodiments of the present application, the process described above with reference to the flowchart can be implemented as a computer software program. For example, the embodiments of the present application include a computer program product comprising a computer program carried on a computer readable medium, the computer program containing program code for executing the method shown in the flowchart. In such embodiments, the computer program can be downloaded and installed from a network through a communication device, or installed from the storage device 1003, or installed from the ROM 1002. When the computer program is executed by the processing device 1001, the above-mentioned functions defined in the method of the embodiments of the present application are executed.

[0114] The electronic device provided by the present application adopts the silicon optical chip monitoring method in the above-mentioned embodiments, and can solve the problem that the abnormality of the optical extinction ratio of the silicon optical chip cannot be monitored in real time. Compared with the prior art, the electronic device provided by the present application has the same beneficial effects as the silicon optical chip monitoring method provided by the above-mentioned embodiments, and the other technical features of the electronic device are the same as the features disclosed in the above-mentioned embodiment method, which will not be repeated here.

[0115] In addition, the present application provides a computer readable storage medium. The computer readable storage medium stores a silicon optical chip monitoring program. When the silicon optical chip monitoring program is executed by a processor, the steps of the above-mentioned silicon optical chip monitoring method are implemented.

[0116] It should be noted that in this paper, the term "include", "contain" or any other variant thereof is intended to cover non-exclusive inclusion, so that the process, method, article or system including a series of elements not only includes those elements, but also includes other elements not explicitly listed, or includes elements inherent to such process, method, article or system. Without more limitations, the element defined by the statement "including a" does not exclude the existence of other identical elements in the process, method, article or system including the element.

[0117] The above-mentioned serial numbers of the embodiments of the present application are only for description, not representing the advantages and disadvantages of the embodiments.

[0118] Those skilled in the art can clearly understand the above-mentioned embodiment method can be realized by means of software and the necessary general hardware platform, of course, can also be through hardware, but in many cases the former is a better embodiment. Based on such understanding, the technical solutions of the present application essentially or say the part of the prior art contribution can be embodied in the form of software products, the computer software product is stored in a computer readable storage medium (such as ROM / RAM, magnetic disk, optical disc) as described above, including a number of instructions to make a device (may be a mobile phone, computer, server, or network equipment, etc.) executes the method described in various embodiments of the present application.

[0119] The above is only the preferred embodiment of the present application, not therefore limit the patent scope of the present application, any equivalent structure or equivalent process transformation using the contents of the present application specification and drawings, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of the present application.

Claims

1. A method for monitoring silicon photonic chips, characterized in that, include: The input monitoring value and output monitoring value integrated by the silicon photonics chip itself are obtained. The input monitoring value is the input optical power value collected by the input monitoring photodiode integrated by the silicon photonics chip itself, and the output monitoring value is the output optical power value collected by the output monitoring photodiode integrated by the silicon photonics chip itself. The output monitoring photodiode monitors the 2dBm optical power output by the silicon photonics chip in real time. Based on the input monitoring points and output monitoring points, establish a mapping relationship between each group of input monitoring values ​​and output monitoring values ​​to obtain at least two groups of monitoring values; Obtain the model parameters of the silicon photonics chip, and determine the target ratio calculation algorithm that matches the model parameters by using the preset mapping relationship between the model parameters and the ratio calculation algorithm. For each of the at least two sets of monitoring values, numerical calculations are performed according to the target ratio calculation algorithm to obtain the power ratio parameter of the silicon photonics chip; The power ratio parameter is compared with a preset ratio range. If the power ratio parameter is not within the preset ratio range, it is determined that the silicon photonics chip has an optical extinction ratio abnormality risk. The initial detection result is formed by integrating the judgment that the silicon photonics chip has an abnormal optical extinction ratio, the power ratio parameter, the actual change, and the model parameter. According to the preset information labeling rules, the information in the initial detection results is classified and labeled. During the labeling process, the optical extinction ratio abnormality risk level of the silicon photonic chip is determined and labeled simultaneously to obtain the classified and labeled detection results. The detection results after classification and labeling are output through a preset output method, wherein the preset output method includes at least one of real-time visualization display, local data storage, or transmission to an external control device; Based on the input monitoring point and the output monitoring point, and the determined risk of optical extinction ratio anomaly, the current input monitoring value of the input monitoring point and the current output monitoring value of the output monitoring point are re-acquired, and the target ratio parameter of the current input monitoring value and the current output monitoring value is calculated by the target ratio calculation algorithm; Obtain the optical performance preset standard corresponding to the model parameter, adjust the power ratio parameter of the silicon photonic chip to the target power ratio parameter, and obtain the silicon photonic chip with the power ratio parameter adjusted; Based on the optical extinction ratio anomaly risk level, the target anomaly risk level of the adjusted silicon photonics chip is determined, and based on the target anomaly risk level, it is determined whether the adjusted silicon photonics chip meets the preset optical performance standard. If the optical performance preset standard is met, the result is that the silicon photonic chip power ratio parameter adjustment is complete and the optical performance meets the standard. If the optical performance does not meet the preset standard, the current data of the input monitoring point and the output monitoring point will be collected again until the silicon photonic chip power ratio parameter is adjusted and the optical performance meets the standard, and the number of times the data is collected again shall not exceed 3.

2. The silicon photonics chip monitoring method as described in claim 1, characterized in that, The steps for obtaining the input and output monitoring values ​​integrated within the silicon photonics chip itself include: The input monitoring point and output monitoring point integrated into the silicon photonics chip are determined, wherein the input monitoring point is used to collect parameter data at the input end of the silicon photonics chip, and the output monitoring point is used to collect parameter data at the output end of the silicon photonics chip; Real-time data collection is performed on the input monitoring point and the output monitoring point respectively. Data collected from at least two input monitoring points are randomly selected as the input monitoring value, and data collected from the output monitoring point corresponding to the input monitoring point is selected as the output monitoring value.

3. The silicon photonics chip monitoring method as described in claim 2, characterized in that, The step of comparing the power ratio parameter with a preset ratio range, and determining that the silicon photonics chip has a risk of abnormal optical extinction ratio when the power ratio parameter is detected to be outside the preset ratio range, includes: Obtain the initial calibration power ratio corresponding to the model parameters of the silicon photonics chip, and obtain the preset change threshold. Using the initial calibration power ratio as a reference value, the reference value is floated upward and downward by the change threshold to form the preset ratio range; Calculate the actual change between the power ratio parameter and the initial calibration power ratio, wherein the actual change is the absolute value of the difference between the power ratio parameter and the initial calibration power ratio; When the power ratio parameter is detected to be greater than the preset ratio range, or the actual change is greater than the preset change threshold, it is determined that the silicon photonics chip has an abnormal optical extinction ratio risk.

4. The silicon photonics chip monitoring method as described in claim 3, characterized in that, The step of obtaining the preset change threshold includes: Based on the model parameters of the silicon photonics chip, query the mapping relationship between the preset model parameters and the change threshold; If a target preset change threshold that matches the model parameter is found, then the target preset change threshold is used as the preset change threshold.

5. A silicon photonics chip monitoring device, characterized in that, The silicon photonics chip monitoring device includes: The data acquisition module is used to acquire the input monitoring value and output monitoring value integrated by the silicon photonics chip itself. The input monitoring value is the input optical power value collected by the input monitoring photodiode integrated by the silicon photonics chip itself, and the output monitoring value is the output optical power value collected by the output monitoring photodiode integrated by the silicon photonics chip itself. The output monitoring photodiode monitors the 2dBm optical power output by the silicon photonics chip in real time. The data calculation module is used to calculate the power ratio parameter based on the input monitoring value and the output monitoring value. Specifically, the data calculation module is used to establish a mapping relationship between each group of input monitoring values ​​and output monitoring values ​​based on the input monitoring point and the output monitoring point, so as to obtain at least two monitoring value corresponding groups. Obtain the model parameters of the silicon photonics chip, and determine the target ratio calculation algorithm that matches the model parameters by using the preset mapping relationship between the model parameters and the ratio calculation algorithm. For each of the at least two sets of monitoring values, numerical calculations are performed according to the target ratio calculation algorithm to obtain the power ratio parameter of the silicon photonics chip; The parameter comparison module is used to compare the power ratio parameter with a preset ratio range, and when the power ratio parameter is detected to be outside the preset ratio range, it is determined that the silicon photonics chip has an optical extinction ratio abnormality risk. The result output module is used to output the detection result characterizing the risk of optical extinction ratio anomaly in the silicon photonics chip. Specifically, the result output module is used to integrate the judgment conclusion of the risk of optical extinction ratio anomaly in the silicon photonics chip, the power ratio parameter, the actual change amount, and the model parameter into an initial detection result; classify and label the information in the initial detection result according to the preset information labeling rules, and simultaneously determine and label the risk level of optical extinction ratio anomaly in the silicon photonics chip during the labeling process to obtain the classified and labeled detection result; and output the classified and labeled detection result through a preset output method, wherein the preset output method includes at least one of real-time visualization display, local data storage, or transmission to an external control device. The silicon photonics chip monitoring device further includes: based on the input monitoring point, the output monitoring point, and the determined optical extinction ratio anomaly risk, re-collecting the current input monitoring value of the input monitoring point and the current output monitoring value of the output monitoring point; calculating the target ratio parameter of the current input monitoring value and the current output monitoring value through the target ratio calculation algorithm; obtaining the optical performance preset standard corresponding to the model parameter; adjusting the power ratio parameter of the silicon photonics chip to the target power ratio parameter to obtain the silicon photonics chip with adjusted power ratio parameter; determining the target anomaly risk level of the adjusted silicon photonics chip based on the optical extinction ratio anomaly risk level, and judging whether the adjusted silicon photonics chip meets the optical performance preset standard based on the target anomaly risk level; if it meets the optical performance preset standard, obtaining the result that the silicon photonics chip power ratio parameter adjustment is completed and the optical performance meets the standard; if it does not meet the optical performance preset standard, re-collecting the current data of the input monitoring point and the output monitoring point until obtaining the result that the silicon photonics chip power ratio parameter adjustment is completed and the optical performance meets the standard, and the number of re-collections does not exceed 3 times.

6. An electronic device, characterized in that, The electronic device includes a processor, a memory, and a silicon photonics chip monitoring program stored in the memory that can be executed by the processor, wherein when the silicon photonics chip monitoring program is executed by the processor, it implements the steps of the silicon photonics chip monitoring method as described in any one of claims 1 to 4.

7. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores a silicon photonics chip monitoring program, wherein when the silicon photonics chip monitoring program is executed by a processor, it implements the steps of the silicon photonics chip monitoring method as described in any one of claims 1 to 4.

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