Ultra-wideband reconfigurable transreflective one-bit array element and antenna

Abstract

The application relates to the technical field of antennas, in particular to an ultra-wideband reconfigurable one-bit trans-reflection array unit and an antenna. The ultra-wideband reconfigurable one-bit trans-reflection array unit comprises a first dielectric layer, a second dielectric layer and a third dielectric layer arranged in a stacking structure in sequence. A first metal polarization grid is arranged on the top of the first dielectric layer. A second metal polarization grid and a feeding structure are arranged on the bottom of the third dielectric layer. A reconfigurable metal resonator is arranged on the top of the second dielectric layer. The reconfigurable metal resonator is connected with a bias line of the feeding structure through a metal column passing through a metalized through hole. A plurality of switching elements are arranged on the reconfigurable metal resonator. The above scheme integrates the transmission and reflection functions on a single trans-reflection array unit, realizes beam scanning in the whole space range, breaks through the limitation that a traditional space-fed array antenna can only work in a half-space scene, and is favorable for improving the application range of the antenna.

Description

Technical Field

[0001] This invention relates to the field of antenna technology, and more specifically, to an ultra-wideband reconfigurable one-bit transparent anti-reflection array element and antenna. Background Technology

[0002] With the rapid development of modern wireless communication technology, the demand for high-gain, low-cost antennas that support radio beam scanning is increasing. These antennas are widely used in key areas such as radar systems, satellite communication networks, and high-precision ground point-to-point links. While traditional phased array antennas can achieve radio beam scanning, they typically require a large number of independent transceiver modules, leading to high system complexity and high cost. Space-fed array antennas, on the other hand, eliminate the need for complex feeding networks, reducing transmission line loss and system complexity. They also offer wider operating bandwidth, lighter weight, and lower manufacturing costs, making them a research hotspot in both academic research and engineering applications.

[0003] However, existing space-fed array antenna designs have some limitations. For example, existing transmission and reflection array designs can usually only achieve good performance in a single operating mode (transmission or reflection), limiting their application to half-space scenarios. Although current reconfigurable transmission and reflection array designs can achieve dynamic switching between transmission and reflection modes, they often struggle to optimize performance in both modes and generally suffer from limited operating bandwidth, failing to meet the demands of modern wireless communication systems for wideband, high-performance antennas. Summary of the Invention

[0004] The purpose of this invention is to provide an ultra-wideband reconfigurable one-bit transparent anti-reflection array element and antenna to solve the above-mentioned technical problems.

[0005] In a first aspect, embodiments of the present invention provide an ultra-wideband reconfigurable one-bit transparent inverting array unit, comprising a first dielectric layer, a second dielectric layer, and a third dielectric layer arranged sequentially in a stacked structure; a first metal polarization gate is disposed on the top of the first dielectric layer; a second metal polarization gate and a feeding structure are disposed at the bottom of the third dielectric layer; a reconfigurable metal resonator is disposed on the top of the second dielectric layer; the reconfigurable metal resonator is connected to the bias line of the feeding structure through a metal pillar passing through the metallized via; and multiple switching elements are disposed on the reconfigurable metal resonator;

[0006] The unit controls the on and off states of the multiple switching elements through the feeding structure, so that the unit operates in transmission mode or reflection mode; wherein, both the transmission mode and the reflection mode support one-bit phase modulation.

[0007] Furthermore, the first metal polarization gate and the second metal polarization gate are orthogonal to selectively control electromagnetic waves with different polarization directions.

[0008] Furthermore, the reconfigurable metal resonator has a symmetrical cross-shaped structure;

[0009] The reconfigurable metal resonator is provided with four switching elements; the four switching elements are respectively arranged at the intersection of the symmetrical cross-shaped structure.

[0010] Furthermore, when two of the switching elements arranged in the first direction of the reconfigurable metal resonator are in the on state, and the other two switching elements arranged in the second direction of the reconfigurable metal resonator are in the off state, the unit operates in the first transmission mode with the first transmission phase; wherein, the first direction and the second direction are the directions of the two intersecting lines of the symmetrical cross structure, respectively.

[0011] Furthermore, when the two switching elements arranged in the first direction of the reconfigurable metal resonator are in the off state, and the other two switching elements arranged in the second direction of the reconfigurable metal resonator are in the on state, the unit operates in the second transmission mode with the second transmission phase; wherein, the first direction and the second direction are the directions of the two intersecting lines of the symmetrical cross structure, respectively.

[0012] Furthermore, when all four switching elements arranged on the reconfigurable metal resonator are in the on state, the unit operates in the first reflection mode with the first reflection phase.

[0013] Furthermore, when all four switching elements arranged on the reconfigurable metal resonator are in the off state, the unit operates in the second reflection mode with the second reflection phase.

[0014] Furthermore, the switching element is a PIN diode; the on and off states of the PIN diode are controlled by the power supply structure.

[0015] Furthermore, the second metal polarization gate is integrated with the feed structure at the bottom of the third dielectric layer.

[0016] Secondly, embodiments of the present invention provide an ultra-wideband reconfigurable one-bit transparent anti-reflection array antenna, comprising a feed source and a beam scanning array, wherein:

[0017] The feed source is spaced apart from the beam scanning array and is used to provide electromagnetic wave energy to the beam scanning array to excite the beam scanning array to perform beam scanning.

[0018] A beam scanning array comprising multiple ultrawideband reconfigurable one-bit transparent inversion array elements provided by a first aspect or any possible implementation of the first aspect, wherein the multiple ultrawideband reconfigurable one-bit transparent inversion array elements are arrayed in the same plane.

[0019] According to the specific embodiments provided in this application, the following technical effects are disclosed:

[0020] On the one hand, the aforementioned ultra-wideband reconfigurable one-bit transparent-reflective array unit and antenna integrate transmission and reflection functions on a single transparent-reflective array unit, realizing beam scanning in the entire space range. This breaks through the limitation of traditional space-fed array antennas that can only work in half-space scenarios, which is conducive to improving the application range of the antenna.

[0021] On the other hand, the design of using a symmetrical cross-shaped reconfigurable metal resonator combined with switching elements enables 1-bit phase modulation to be supported in both transmission and reflection modes, which is beneficial to improving the flexibility and accuracy of beam scanning, and thus improving the electromagnetic performance of the antenna.

[0022] On the other hand, through the integrated design of the feeding structure and the polarization grating, not only is the polarization selectivity of the bottom polarization grating for electromagnetic waves retained, but also the efficient feeding of DC bias voltage is achieved, which improves the compactness and integration of the structure, reduces the system complexity and cost, and supports ultra-wideband operation, meeting the needs of modern wireless communication systems for wideband and high-performance antennas.

[0023] Other features and advantages of the invention will be set forth in the following description, and will be apparent in part from the description, or may be learned by practicing embodiments of the invention. The objects and other advantages of the invention may be realized and obtained by means of the structures particularly pointed out in the written description, claims, and drawings. Attached Figure Description

[0024] To more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings used in the embodiments of the present invention will be briefly introduced below. It should be understood that the following drawings only show some embodiments of the present invention and should not be regarded as a limitation on the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0025] Figure 1 This is a schematic diagram of the structure of an ultrawideband reconfigurable one-bit transparent inversion array unit provided in an embodiment of the present invention;

[0026] Figure 2 This is a schematic diagram of the reconfigurable metal resonator provided in an embodiment of the present invention;

[0027] Figure 3This is a schematic diagram of the structure of a partial bias line and a second metal polarization gate provided in an embodiment of the present invention;

[0028] Figure 4 A schematic diagram of the transmission amplitude and reflection amplitude of an ultrawideband reconfigurable one-bit transparent reflective array unit in states "T0" and "T1" provided in an embodiment of the present invention;

[0029] Figure 5 A schematic diagram of the transmission phase and phase difference of an ultrawideband reconfigurable one-bit transparent inversion array unit in states "T0" and "T1" provided in an embodiment of the present invention.

[0030] Figure 6 A schematic diagram of the reflection amplitude of an ultrawideband reconfigurable one-bit transparent inflection array unit in states "R0" and "R1" provided in an embodiment of the present invention;

[0031] Figure 7 A schematic diagram of the reflection phase and phase difference under states "R0" and "R1" of the ultra-wideband reconfigurable one-bit transparent inflection array cell provided in an embodiment of the present invention;

[0032] Figure 8 This is a schematic diagram of the structure of an ultra-wideband reconfigurable one-bit transparent anti-reflection array antenna provided in an embodiment of the present invention;

[0033] Figure 9 This is a schematic diagram of the top-layer metal polarization grating in an ultra-wideband reconfigurable one-bit transparent anti-reflection array antenna provided in an embodiment of the present invention;

[0034] Figure 10 This is a schematic diagram of the reconfigurable metal resonator in an ultra-wideband reconfigurable one-bit transparent anti-array antenna provided in an embodiment of the present invention;

[0035] Figure 11 This is a schematic diagram of the structure of the bottom polarization grating and bias line in the ultra-wideband reconfigurable one-bit transparent anti-reflection array antenna provided in an embodiment of the present invention;

[0036] Figure 12 A schematic diagram showing the main polarization and cross-polarization results of the scanning beam in the E-plane and H-plane at 3GHz, 4GHz and 5GHz respectively in transmission mode, provided for embodiments of the present invention;

[0037] Figure 13 A schematic diagram of gain and corresponding aperture efficiency in transmission mode provided in an embodiment of the present invention;

[0038] Figure 14 A schematic diagram showing the main polarization and cross-polarization results of the scanning beam on the E-plane and H-plane at 3GHz, 4GHz and 5GHz respectively, provided in the transmission mode of the present invention;

[0039] Figure 15 This is a schematic diagram showing the gain and corresponding aperture efficiency in the reflection mode provided in an embodiment of the present invention.

[0040] The numbers in the diagram are as follows:

[0041] 100. Ultra-wideband reconfigurable one-bit transparent anti-reflection array element; 101. First dielectric layer; 102. Second dielectric layer; 103. Third dielectric layer; 104. First metal polarization grating; 105. Second metal polarization grating; 106. Feed structure; 107. Reconfigurable metal resonator; 108. Metal pillar; 109. Switching element; 200. Ultra-wideband reconfigurable one-bit transparent anti-reflection array antenna; 201. Beam scanning array; 202. Feed source. Detailed Implementation

[0042] The embodiments of the technical solution of the present invention will be described in detail below with reference to the accompanying drawings. The following embodiments are only used to more clearly illustrate the technical solution of the present invention, and are therefore only examples, and should not be used to limit the scope of protection of the present invention. Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains; the terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the invention; the terms "comprising" and "having," and any variations thereof, in the specification, claims, and the foregoing description of the drawings are intended to cover non-exclusive inclusion. In the description of the embodiments of the present invention, technical terms such as "first," "second," etc., are only used to distinguish different objects and should not be construed as indicating or implying relative importance or implicitly indicating the number, specific order, or primary or secondary relationship of the indicated technical features. In the description of the embodiments of the present invention, "a plurality of" means two or more, unless otherwise explicitly specified. The reference to "embodiment" herein means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of the present invention. The appearance of this phrase in various places in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0043] With the rapid development of wireless communication technology, the demand for high-gain, low-cost antennas that support radio beam scanning is increasing. Such antennas have been widely used in critical scenarios such as radar systems, satellite communication networks, and high-precision ground point-to-point links. While traditional phased array antennas can achieve radio beam scanning, they typically require a large number of independent transceiver modules, leading to high system complexity and high cost. In contrast, space-fed array antennas have attracted much attention due to their structural advantages. They eliminate the need for complex feeding networks, reducing transmission line losses and system complexity, while also offering wider operating bandwidth, lighter weight, and lower manufacturing costs. Space-fed arrays are becoming a promising solution in academic research and engineering applications, capable of achieving high-gain performance while significantly reducing system costs.

[0044] Space-fed array antennas mainly include three types: transmission arrays, reflection arrays, and reconfigurable transmission-reflection arrays. Existing transmission and reflection array designs can usually only achieve good performance in a single operating mode (transmission or reflection), limiting their application to half-space scenarios. Although current reconfigurable transmission-reflection array designs can achieve dynamic switching between transmission and reflection modes, they often struggle to optimize performance in both modes and generally suffer from limited operating bandwidth.

[0045] In view of this, embodiments of the present invention provide an ultra-wideband reconfigurable one-bit transparent-reflective array element and antenna. By integrating transmission and reflection functions on a single transparent-reflective array element, beam scanning is achieved across the entire space range, overcoming the limitation of traditional space-fed array antennas that can only operate in half-space scenarios, thus improving the application range of the antenna. On the other hand, the design of a symmetrical cross-shaped reconfigurable metal resonator combined with a switching element enables 1-bit phase modulation to be supported in both transmission and reflection modes, which is beneficial to improving the flexibility and accuracy of beam scanning, thereby improving the electromagnetic performance of the antenna. Furthermore, through the integrated design of the feeding structure and polarization grating, not only is the polarization selectivity of the bottom polarization grating for electromagnetic waves retained, but also the efficient feeding of DC bias voltage is achieved, improving the compactness and integration of the structure, reducing system complexity and cost, while supporting ultra-wideband operation, meeting the requirements of modern wireless communication systems for wideband, high-performance antennas.

[0046] Before introducing the aforementioned ultra-wideband reconfigurable one-bit transparent anti-reflection array element and antenna, let's first introduce the application scenarios of its ultra-wideband reconfigurable one-bit transparent anti-reflection array antenna:

[0047] Ultra-wideband reconfigurable one-bit transparent anti-reflection array antennas, with their excellent beam scanning capability, wideband characteristics, and reconfigurability, have broad application prospects in multiple technical fields, including but not limited to:

[0048] (1) Radar System: In modern radar systems, ultra-wideband reconfigurable one-bit transparent-reflective array antennas can improve the efficiency and accuracy of target detection and tracking. It can achieve rapid beam scanning over a wide frequency band, effectively covering a large area, thereby improving the radar's search speed and target positioning accuracy. In addition, its reconfigurability of transparent-reflective modes allows the radar to flexibly switch between different operating modes to meet diverse mission requirements, such as air surveillance, ground target detection, and maritime target tracking.

[0049] (2) Satellite Communication: In the field of satellite communication, the antenna's ultra-wideband characteristics and efficient beam scanning capability make it an ideal choice for achieving high data transmission rates and wide-area coverage. It can flexibly switch between different frequency ranges, adapt to various satellite communication standards, and support the establishment of stable communication links between satellites at different orbital altitudes (such as low Earth orbit, medium Earth orbit, and geostationary orbit). In addition, its reconfigurability can be used to dynamically adjust the beam direction to cope with satellite movement and changes in ground station location, thereby ensuring the continuity and reliability of communication.

[0050] (3) Wireless Sensor Networks: In wireless sensor networks, this antenna can be used to build efficient communication networks between sensor nodes. Its ultra-wideband characteristics and low-power design enable it to achieve high-speed data transmission over short distances, making it suitable for applications such as environmental monitoring, smart buildings, and industrial automation. In addition, its reconfigurable beam scanning capability can be used to optimize network topology and dynamically adjust communication links to adapt to changes in the distribution of sensor nodes and dynamic environmental conditions.

[0051] The following section will describe the ultrawideband reconfigurable one-bit transparent inversion array element with reference to the attached diagram:

[0052] Please see Figure 1 This invention provides an ultra-wideband reconfigurable one-bit transparent inverting array unit 100, comprising: a first dielectric layer 101, a second dielectric layer 102, and a third dielectric layer 103 arranged sequentially in a stacked structure; a first metal polarization gate 104 is disposed on the top of the first dielectric layer 101; a second metal polarization gate 105 and a feeding structure 106 are disposed on the bottom of the third dielectric layer 103; a reconfigurable metal resonator 107 is disposed on the top of the second dielectric layer 102; the reconfigurable metal resonator 107 is connected to the bias line of the feeding structure 106 through a metal pillar 108 passing through a metallized via; and a plurality of switching elements 109 are disposed on the reconfigurable metal resonator 107.

[0053] The ultra-wideband reconfigurable one-bit transparent-reflecting array unit 100 controls the on and off states of multiple switching elements 109 through the feeding structure 106, so that the ultra-wideband reconfigurable one-bit transparent-reflecting array unit 100 can operate in transmission mode or reflection mode; wherein, both transmission mode and reflection mode support one-bit phase modulation.

[0054] The main functions of the first dielectric layer 101, the second dielectric layer 102, and the third dielectric layer 103 mentioned above include: support, isolation, and control of electromagnetic waves. The functions of each dielectric layer and possible selections are described below:

[0055] (1) First dielectric layer 101;

[0056] Main functions: The first dielectric layer 101 primarily serves as support and isolation, providing physical support for the first metal polarization gate 104 and isolating the metal polarization gate from the reconfigurable metal resonator 107, ensuring efficient transmission of electromagnetic waves in both transmission and reflection modes. It also controls the phase and polarization characteristics of electromagnetic waves, providing a stable phase control basis for the unit's transmission and reflection modes.

[0057] Possible selections: When selecting materials, those with moderate dielectric constant and low loss are typically chosen, such as polytetrafluoroethylene (PTFE) or Rogers RO4350B. These materials have good electromagnetic and mechanical properties, maintain stable dielectric characteristics over a wide bandwidth, and have low dielectric loss, which helps improve the antenna's radiation efficiency.

[0058] (2) Second dielectric layer 102;

[0059] Main functions: The second dielectric layer 102, located between the first dielectric layer 101 and the third dielectric layer 103, primarily supports the reconfigurable metal resonator 107. The second dielectric layer 102 provides a stable physical foundation for the reconfigurable metal resonator 107 and isolates it from the upper and lower metal structures, preventing electromagnetic coupling interference. Furthermore, the second dielectric layer 102 plays a crucial role in the phase modulation of electromagnetic waves; its thickness and dielectric constant affect the propagation characteristics and resonant frequency of electromagnetic waves within the resonator.

[0060] Possible selections: The selection of the second dielectric layer 102 needs to consider its matching with the metal resonator and its effect on electromagnetic wave modulation. Typically, a material similar to the first dielectric layer 101, such as Rogers RO4350B, is chosen to ensure the electromagnetic compatibility and stability of the entire dielectric structure. Simultaneously, its thickness needs to be precisely controlled according to the antenna's operating frequency band and design requirements to achieve optimal phase modulation.

[0061] (3) Third dielectric layer 103;

[0062] Main functions: The third dielectric layer 103 primarily supports the second metal polarization gate 105 and the feed structure 106, while also forming a complete dielectric substrate structure together with the second dielectric layer 102. The third dielectric layer 103 provides physical support for the feed structure 106 and isolates it from the reconfigurable metal resonator 107, preventing electromagnetic coupling interference. The third dielectric layer 103 also affects the reflection and transmission characteristics of electromagnetic waves; its dielectric constant and thickness influence the distribution and propagation characteristics of electromagnetic waves within the antenna element.

[0063] Possible selections: The selection of the third dielectric layer 103 also needs to consider compatibility with the overall dielectric structure and the effect on electromagnetic wave modulation. Typically, the same material as the first dielectric layer 101 and the second dielectric layer 102 is selected to ensure the integrity and stability of the dielectric structure. Simultaneously, its thickness and dielectric constant need to be optimized according to the design requirements of the feed structure and the antenna's operating frequency band to achieve efficient electromagnetic wave transmission and reflection characteristics.

[0064] Optionally, the first metal polarization gate 104 and the second metal polarization gate 105 are orthogonal to selectively control electromagnetic waves with different polarization directions.

[0065] The main functions of the first metal polarization gate 104 and the second metal polarization gate 105 mentioned above include:

[0066] (1) Polarization Selection and Control: The first metal polarization gate 104 is located on top of the first dielectric layer 101, and the second metal polarization gate 105 is located at the bottom of the third dielectric layer 103, and the two are arranged orthogonally to each other. The main function of the first metal polarization gate 104 and the second metal polarization gate 105 is to select and control the polarization direction of the incident electromagnetic wave. Each polarization gate allows polarization components parallel to its gate bar direction to pass through (transmission), while reflecting polarization components perpendicular to its gate bar direction. In this way, the first metal polarization gate 104 and the second metal polarization gate 105 together achieve effective control of the polarization direction of the electromagnetic wave, providing a basis for subsequent phase modulation and beam scanning.

[0067] (2) Electromagnetic wave coupling and transmission: The first metal polarization gate 104 is responsible for effectively coupling the received electromagnetic wave energy into the dielectric layer to achieve efficient transmission of electromagnetic waves inside the antenna. The second metal polarization gate 105 reflects the electromagnetic wave back to the source direction in reflection mode and allows the electromagnetic wave to be transmitted to the other side in transmission mode, thereby realizing beam scanning in the entire space range.

[0068] (3) Integration of feeding and biasing functions: The second metal polarization gate 105 is integrated with the feeding structure and connected to the bias line of the feeding structure through a metallized via. This integrated design not only retains the selective reflection function of the polarization gate for electromagnetic waves in a specific polarization direction, but also realizes the efficient feeding of DC bias voltage, providing the necessary bias conditions for the switching element 109 on the reconfigurable metal resonator 107, thereby realizing the dynamic switching of the antenna in transmission and reflection modes.

[0069] The first metal polarization gate 104 and the second metal polarization gate 105 can be made of highly conductive metal materials, such as copper or aluminum, to ensure low transmission loss and efficient electromagnetic wave reflection and transmission performance. The spacing and width of the polarization gate bars need to be optimized according to the antenna's operating frequency band. The bar spacing is typically less than half the wavelength of the operating frequency band to effectively reflect vertically polarized electromagnetic waves while allowing horizontally polarized electromagnetic waves to transmit. The bar width needs to be adjusted according to the actual electromagnetic wave intensity and coupling requirements to achieve the best electromagnetic wave coupling effect. In addition, the structural design of the second metal polarization gate 105 also needs to consider compatibility with the feed structure to ensure the reasonable layout and connection of the metallized vias.

[0070] Optionally, the reconfigurable metal resonator 107 has a symmetrical cross-shaped structure; four switching elements 109 are provided on the reconfigurable metal resonator 107; the four switching elements 109 are respectively arranged at the intersection of the symmetrical cross-shaped structure.

[0071] The aforementioned reconfigurable metal resonator 107 is the core component of the ultra-wideband reconfigurable one-bit transmissive-reflective array unit 100. Its main function is to achieve one-bit phase modulation of the antenna in both transmission and reflection modes by dynamically adjusting its own electromagnetic characteristics. The reconfigurable metal resonator 107 can rapidly adjust the phase of electromagnetic waves over a wide bandwidth, thereby supporting efficient beam scanning. Specifically, the reconfigurable metal resonator 107 changes the boundary conditions and electromagnetic response characteristics of the resonator by switching the on and off states of the switching element 109, thereby achieving a 180° phase difference in both transmission and reflection modes, meeting the requirement of one-bit phase modulation.

[0072] The reconfigurable metal resonator 107 adopts a symmetrical cross-shaped structure. This structural design not only provides good electromagnetic symmetry but also enables the reconfigurable metal resonator 107 to independently control the phase of the electromagnetic wave in two orthogonal directions. Four switching elements 109 are arranged at the cross-point, and the conduction and cutoff states of the switching elements 109 are controlled by the bias line of the feed structure 106. By using different combinations of the diagonal switching elements, the reconfigurable metal resonator 107 can achieve polarization rotation of the electromagnetic wave in transmission mode and change the phase of the reflected wave in reflection mode, thereby achieving beam directional control.

[0073] The substrate material of the reconfigurable metal resonator 107 is usually a metal material with good conductivity and processing performance, such as copper or aluminum, to ensure low electromagnetic loss and efficient energy transmission.

[0074] Furthermore, the reconfigurable metal resonator 107 can also be connected to the bias line of the feed structure 106 via a metallized via, achieving seamless integration with the feed structure 106. This design not only ensures efficient DC bias voltage feeding but also retains the selective reflection function of the bottom second metal polarization gate 105 for electromagnetic waves in a specific polarization direction. The structural design of the reconfigurable metal resonator 107 fully considers compatibility with the dielectric layer and other metal structures, ensuring that the entire unit has good electromagnetic matching and stable performance over a wide frequency band.

[0075] Optionally, the switching element 109 is a PIN diode; the on and off states of the PIN diode are controlled by the power supply structure.

[0076] The main function of the aforementioned switching element 109 is to dynamically control the operating mode of the reconfigurable metal resonator 107 by changing its own on / off state, thereby achieving 1-bit phase modulation of the antenna in both transmission and reflection modes. Specifically, the on / off state of the switching element 109 is controlled by the bias line of the feed structure 106, and the phase modulation of the electromagnetic wave is achieved by changing the boundary conditions and electromagnetic response characteristics of the reconfigurable metal resonator 107.

[0077] The switching element 109 can be a PIN diode, as it features fast switching speed, low insertion loss, and good high-frequency performance, meeting the phase modulation requirements across a wide bandwidth. A PIN diode exhibits low resistance in the on-state, allowing current to flow; and high resistance in the off-state, preventing current flow. This characteristic enables the PIN diode to effectively control the propagation path and phase changes of electromagnetic waves.

[0078] Optionally, the second metal polarization gate 105 is integrated with the feed structure 106 at the bottom of the third dielectric layer 103.

[0079] The aforementioned second metallic polarization gate 105 and feed structure 106 can be integrated at the bottom of the third dielectric layer 103 to form a compact structural module. The main function of the second metallic polarization gate 105 is to select and control the polarization direction of the incident electromagnetic wave, allowing the polarization component parallel to its gate strip direction to be transmitted, while reflecting the polarization component perpendicular to its gate strip direction. Simultaneously, the feed structure 106 provides the necessary DC bias voltage to the switching element 109 on the reconfigurable metallic resonator 107 via a bias line. This integrated design ensures efficient switching and phase modulation of the antenna in transmission and reflection modes.

[0080] Optionally, when two switching elements 109 arranged in the first direction of the reconfigurable metal resonator 107 are in the on state, and the other two switching elements 109 arranged in the second direction of the reconfigurable metal resonator 107 are in the off state, the ultra-wideband reconfigurable one-bit transparent inversion array unit 100 operates in the first transmission mode with the first transmission phase; wherein, the first direction and the second direction are the directions of the two intersecting lines of the symmetrical cross structure, respectively.

[0081] Optionally, when two switching elements 109 arranged in the first direction of the reconfigurable metal resonator 107 are in the off state, and the other two switching elements 109 arranged in the second direction of the reconfigurable metal resonator 107 are in the on state, the ultra-wideband reconfigurable one-bit transparent inversion array unit 100 operates in the second transmission mode with the second transmission phase; wherein, the first direction and the second direction are the directions of the two intersecting lines of the symmetrical cross structure, respectively.

[0082] Optionally, when all four switching elements 109 arranged on the reconfigurable metal resonator 107 are in the on state, the ultra-wideband reconfigurable one-bit transparent reflective array unit 100 operates in the first reflection mode with the first reflection phase.

[0083] Optionally, when all four switching elements 109 arranged on the reconfigurable metal resonator 107 are in the off state, the ultra-wideband reconfigurable one-bit transparent reflective array unit 100 operates in the second reflection mode with the second reflection phase.

[0084] To facilitate understanding of the working principle of the ultra-wideband reconfigurable one-bit transparent inversion array 100, the following provides a specific application method and working principle of the ultra-wideband reconfigurable one-bit transparent inversion array 100 in a certain application scenario:

[0085] like Figure 1 As shown, the ultra-wideband reconfigurable one-bit transparent reflective array 100 consists of three dielectric layers, three metal layers, and interlayer metal pillars. The top of the first dielectric layer 101 is a metal polarization gate structure. The bottom of the third dielectric layer 103 is a metal polarization gate structure and a bias-line-based feed structure 106. The polarization gates at the top and bottom layers are orthogonally positioned, and their operating characteristics are such that they can completely reflect polarization components parallel to their gate bar direction and completely transmit polarization components perpendicular to their gate bar direction. The top of the second dielectric layer 102 is a cross-shaped bidirectional arrowhead-shaped reconfigurable metal resonator 107, as shown... Figure 2As shown, four PIN diodes, labeled PIN1 to PIN4, are integrated on the resonator. The second dielectric layer 102 and the third dielectric layer 103 contain metallized vias, through which five metal pillars 108 connect the reconfigurable metal resonator 107 to the bias line. The voltage across the PIN diodes can be changed via the underlying bias line, thus flexibly controlling the diodes' on / off states. It is worth noting that, as... Figure 3 As shown, the polarization gate and feed structure 106 at the bottom of the third dielectric layer 103 are integrated designs, which integrate part of the polarization gate with the bias line. This design can achieve the feeding of DC bias voltage while retaining the polarization selection characteristics of the bottom polarization gate, thereby improving the integration of the structure.

[0086] When one diagonal diode is on while the other diagonal diode is off, the reconfigurable metal resonator 107 operates in a repolarization transmission mode. By reversing the conduction states of the four diodes, an equivalent 90° geometric rotation can be achieved. Using the geometric phase, 1-bit transmission phase modulation can be achieved. These two states are denoted as "T0" and "T1" in the transmission mode, respectively. When all four diodes are simultaneously on or off, the reconfigurable metal resonator operates in a copolarization reflection mode. These two states are equivalent to changes in the structural resonance size, thus allowing 1-bit reflection phase modulation using the resonant phase. These two states are denoted as "R0" and "R1" in the reflection mode, respectively. Table 1 summarizes the specific operating states of each PIN diode under the four conditions:

[0087] Table 1. Operating status of PIN diodes in T0, T1, R0, and R1 modes.

[0088]

[0089] To evaluate the performance of the aforementioned ultrawideband reconfigurable one-bit transparent anti-array element 100 under four defined states, full-wave electromagnetic simulations were performed using CST Microwave Studio software. The simulation model employed periodic boundary conditions in the x and y directions and open boundary conditions in the -z and +z directions. Figure 4 and Figure 5 As shown, the cells in states "T0" and "T1" can efficiently convert incident x-polarized waves into y-polarized transmitted waves. This polarization conversion is achieved within an ultra-wide bandwidth of 2.5-5.5 GHz (relative bandwidth: 75.5%), with an insertion loss of less than -1 dB and a co-polarization reflection coefficient of less than -10 dB. Since the "T0" and "T1" states are essentially 90° rotations of the structure, geometric phase theory indicates an inherent phase difference of 180° between them within the transmission frequency band.

[0090] like Figure 6 and Figure 7 As shown, the cells in states "R0" and "R1" can reflect incident x-polarized waves in a co-polarized manner. Within the ultra-wideband, the co-polarized reflection amplitudes in both states "R0" and "R1" are greater than -1 dB, indicating that x-polarized incident waves in both modes are almost totally reflected within the operating frequency band. It is worth noting that... Figure 6 and Figure 7 It can be obtained that: within the entire ultra-wideband of 2.5-5.5GHz (relative bandwidth: 75%), the phase difference of co-polarized reflection in the "R0" and "R1" states is always maintained within the range of 180°±20°.

[0091] Please see Figures 8 to 11 Based on the same inventive concept, this invention also provides an ultra-wideband reconfigurable one-bit transparent anti-reflective array antenna 200, including a feed source 202 and a beam scanning array 201, wherein:

[0092] The feed source 202 is spaced apart from the beam scanning array 201 and is used to provide electromagnetic wave energy to the beam scanning array 201 to excite the beam scanning array 201 to perform beam scanning.

[0093] The beam scanning array 201 includes multiple ultra-wideband reconfigurable one-bit transparent inversion array elements 100 provided in this embodiment of the invention, and the multiple ultra-wideband reconfigurable one-bit transparent inversion array elements 100 are arrayed on the same plane. Specifically:

[0094] The aforementioned feed 202 can be a linearly polarized horn antenna, which, when combined with the beam scanning array 201, forms an ultra-wideband reconfigurable transflective array antenna.

[0095] In CST Microwave Studio, a time-domain solver was used to perform full-wave electromagnetic simulation on the proposed array antenna model. To ensure the accuracy of the results, the ultra-wideband of 2.5 to 5.5 GHz was divided into three sub-bands during the simulation: 2.5-3.5 GHz, 3.5-4.5 GHz, and 4.5-5.5 GHz.

[0096] In the operation mode of the transmission array, the array unit supports two switchable states: "T0" and "T1". Figure 12The beam scanning characteristics of the array antenna in the E-plane and H-plane at the center frequencies of the three sub-bands (3 GHz, 4 GHz, and 5 GHz) are demonstrated (transmission gain has been normalized). Results show that the array antenna can achieve beam scanning from 0° to 45° in both the E-plane and H-plane, and the simulated main beam direction closely matches the preset scanning angle. With increasing scanning angle, the main lobe width increases slightly compared to 0°, and the gain decreases slightly, but the maximum attenuation is controlled within 5 dBi. The cross-polarization amplitude mostly remains below -15 dB, and isolation of over 10 dB can be achieved in the beam scanning direction.

[0097] Figure 13 The results of segmented simulations of radiation gain and corresponding aperture efficiency at a 0° beam scanning angle in the 2.5-5.5 GHz band are presented. The maximum gain of 20.9 dBi is achieved at 5.2 GHz, and the maximum aperture efficiency of 21.2% is achieved at 3.1 GHz, showing good performance in both gain and aperture efficiency.

[0098] In the working mode of the reflective array, the array unit supports two switchable states: "R0" and "R1". Figure 14 The beam scanning characteristics of the array antenna in the E-plane and H-plane at three center frequencies of 3 GHz, 4 GHz, and 5 GHz (transmission gain has been normalized) are shown. As can be observed from the figures, the array antenna can achieve reflected beam scanning from 0° to 45° in both the E-plane and H-plane, and the simulated main beam direction closely matches the preset scanning angle. With increasing scanning angle, the main lobe width increases slightly compared to 0°, and the gain decreases slightly, but the maximum attenuation is controlled within 5 dBi. The cross-polarization amplitude mostly remains below -30 dB, and the maximum isolation exceeds -40 dB.

[0099] Figure 15 The simulation results for the radiation gain and corresponding aperture efficiency in the 2.5-5.5 GHz frequency band are presented. The simulation data show that the maximum gain of 20.4 dBi is achieved at 5.2 GHz, and the maximum aperture efficiency of 21.6% is achieved at 4.3 GHz, demonstrating that the reflective array mode has excellent gain and aperture efficiency performance.

[0100] The ultra-wideband reconfigurable one-bit transflective array antenna 200 provided in this embodiment of the invention supports beam scanning in both polarization-reversed transmission and co-polarization reflection modes. Furthermore, the ultra-wideband reconfigurable one-bit transflective array element 100 exhibits ultra-wideband performance in both modes, achieving a consistent relative bandwidth of 75% and demonstrating excellent electromagnetic performance. The integrated design of the feed structure 106 and the polarization grating enhances the overall structural compactness. This reconfigurable transflective array can achieve a maximum beam scanning of 45° in both transmission and reflection modes over an ultra-wideband frequency range, with maximum aperture efficiencies of 21.2% and 21.6%, respectively. Compared to other existing designs, the proposed one-bit reconfigurable transflective array exhibits superior bandwidth performance in both modes and has a simpler structure. With its excellent electromagnetic performance, reconfigurability, and full-space beam scanning capability, this ultra-wideband reconfigurable transflective array shows great potential in future radar systems and integrated communication and sensing applications.

[0101] It is understood that the modules / units / components in the various embodiments of the present invention can be integrated together to form an independent part, or each module can exist independently, or two or more modules can be integrated to form an independent part.

[0102] The above description is merely an embodiment of the present invention and is not intended to limit the scope of protection of the present invention. For those skilled in the art, the present invention can have various modifications and variations. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.

Claims

1. A superwideband reconfigurable one-bit transparent inversion array unit, characterized in that, The device includes a first dielectric layer, a second dielectric layer, and a third dielectric layer arranged in a stacked structure. A first metal polarization gate is disposed on the top of the first dielectric layer. A second metal polarization gate and a feeding structure are disposed at the bottom of the third dielectric layer. A reconfigurable metal resonator is disposed on the top of the second dielectric layer. The reconfigurable metal resonator is connected to the bias line of the feeding structure through a metal pillar passing through a metallized via. Multiple switching elements are disposed on the reconfigurable metal resonator. The unit controls the on and off states of the multiple switching elements through the feeding structure, so that the unit operates in transmission mode or reflection mode; wherein, both the transmission mode and the reflection mode support one-bit phase modulation; The reconfigurable metal resonator has a symmetrical cross-shaped structure; four switching elements are provided on the reconfigurable metal resonator; the four switching elements are respectively arranged at the intersection of the symmetrical cross-shaped structure; When two switching elements arranged in the first direction of the reconfigurable metal resonator are in the on state, and the other two switching elements arranged in the second direction of the reconfigurable metal resonator are in the off state, the unit operates in the first transmission mode with the first transmission phase; wherein, the first direction and the second direction are the directions of the two intersecting lines of the symmetrical cross structure, respectively. When the two switching elements arranged in the first direction of the reconfigurable metal resonator are in the off state, and the other two switching elements arranged in the second direction of the reconfigurable metal resonator are in the on state, the unit operates in the second transmission mode with the second transmission phase; wherein, the first direction and the second direction are the directions of the two intersecting lines of the symmetrical cross structure, respectively. When all four switching elements arranged on the reconfigurable metal resonator are in the on state, the unit operates in the first reflection mode with the first reflection phase. When all four switching elements arranged on the reconfigurable metal resonator are in the off state, the unit operates in the second reflection mode with the second reflection phase.

2. The ultra-wideband reconfigurable one-bit transparent inversion array unit according to claim 1, characterized in that, The first metal polarization gate and the second metal polarization gate are orthogonal to selectively control electromagnetic waves with different polarization directions.

3. The ultra-wideband reconfigurable one-bit transparent inversion array unit according to claim 1, characterized in that, The switching element is a PIN diode; the on and off states of the PIN diode are controlled by the power supply structure.

4. The ultra-wideband reconfigurable one-bit transparent inversion array element according to any one of claims 1 to 2, characterized in that, The second metal polarization gate is integrated with the feed structure at the bottom of the third dielectric layer.

5. An ultra-wideband reconfigurable one-bit transparent anti-reflective array antenna, characterized in that, Includes a feed source and a beam scanning array, wherein: The feed source is spaced apart from the beam scanning array and is used to provide electromagnetic wave energy to the beam scanning array to excite the beam scanning array to perform beam scanning. The beam scanning array includes a plurality of ultra-wideband reconfigurable one-bit transparent inversion array elements as described in any one of claims 1 to 4, wherein the plurality of ultra-wideband reconfigurable one-bit transparent inversion array elements are arranged in an array on the same plane.

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