Heating device for chemical vapor deposition equipment and chemical vapor deposition equipment

Abstract

The invention relates to the field of chemical vapor deposition equipment, and discloses a heating device for chemical vapor deposition equipment and the chemical vapor deposition equipment, the heating device for the chemical vapor deposition equipment comprises a vertical shaft, and a cross beam is fixedly mounted at the bottom end of the vertical shaft. The heating device has the following advantages and effects that flexible switching of three heating modes of a resistance heater, an induction heater and an infrared heater is facilitated, the chemical vapor deposition requirements of semiconductor wafers made of various materials can be met, the multi-temperature-interval processing requirements can be met, the heating requirements of different deposits can be met, and the application range is wide. The two heat insulation boxes can be controlled to rotate in a reciprocating mode in the reaction cavity with the vertical shaft as the center, it is ensured that all areas of the semiconductor wafer are heated evenly, the heating uniformity and comprehensiveness of the semiconductor wafer placed on the conductive bearing frame are improved, the thickness deviation of a film deposited on the semiconductor wafer is effectively reduced, and the yield of the semiconductor wafer is improved. And thus, the quality of chemical vapor deposition treatment on the semiconductor wafer is improved.

Description

Technical Field

[0001] This application relates to the field of chemical vapor deposition equipment technology, and in particular to a heating device for chemical vapor deposition equipment and a chemical vapor deposition equipment. Background Technology

[0002] Chemical vapor deposition (CVD) is a chemical engineering technique that utilizes one or more gaseous compounds or elements containing thin-film elements to chemically react on a substrate surface to form a thin film. CVD is widely used for purifying substances, developing new crystals, and depositing various single-crystal, polycrystalline, or glassy inorganic thin-film materials. These materials can be oxides, sulfides, nitrides, carbides, or binary or multi-element inter-element compounds from groups III-V, II-IV, and IV-VI, and their physical properties can be precisely controlled through the vapor-phase doping deposition process. Currently, chemical vapor deposition (CVD) is a core thin film fabrication process in semiconductors, photovoltaics, and optical devices. Its core requirement is to enable the chemical reaction and deposition of gaseous compounds on the surface of semiconductor wafers through precise temperature control to form high-quality thin films. With the rapid development of semiconductor technology, the materials of semiconductor wafers to be processed are becoming increasingly diverse (such as silicon, silicon carbide, gallium nitride, sapphire, flexible semiconductors, etc.). The thermophysical properties (thermal conductivity, heat resistance temperature, thermal stability) of different materials vary significantly. At the same time, deposition processes are also developing in a diversified manner, covering atmospheric pressure CVD, low pressure CVD, plasma-enhanced CVD, rapid thermochemical vapor deposition, etc. Different processes have fundamentally different requirements for heating temperature, heating rate, cleanliness, and uniformity.

[0003] Chemical vapor deposition (CVD) equipment is an analytical instrument that deposits solid materials on a substrate surface through a gas-phase chemical reaction. A typical CVD system includes a reaction chamber, heating elements, a gas supply system, and sometimes a vacuum system. The reaction chamber is used to heat semiconductor wafers (e.g., steel wafers) for CVD. Currently, traditional CVD equipment often uses a single heating method, which is insufficient to meet all application scenarios. For example, using only a resistance heater, while low-cost and simple in structure, results in a slow heating rate, easily causing thermal damage to low-temperature sensitive materials such as flexible semiconductors, and has poor adaptability to high-cleanliness, rapid heating and cooling processes. Similarly, using only an induction heater, while offering good temperature uniformity and high cleanliness, is only suitable for conductive substrates or requires a special induction target, and cannot be directly adapted to insulating wafers such as sapphire and glass, and the equipment cost is high. Furthermore, using only an infrared heater, while offering fast low-temperature response and no heat transfer loss, lacks high-temperature stability and cannot meet the requirements of high-temperature deposition processes above 800°C (such as silicon carbide and diamond). (For thin film preparation), this singular heating method means that a single chemical vapor deposition (CVD) device can typically only be adapted to one or two types of semiconductor wafers or specific temperature ranges, limiting its applicability and versatility. Users need to purchase multiple dedicated devices to meet different production needs, significantly increasing equipment procurement and maintenance costs. Moreover, the heating devices of traditional CVD devices are mostly fixed installation structures, with a fixed relative position between the heater and the semiconductor wafer placed in the reaction chamber. Especially for large-size wafers (such as wafer-level wafers), the temperature difference between the edge and center of the semiconductor wafer is prone to be too large, resulting in uneven film thickness, poor performance consistency, and reduced quality of CVD processing of semiconductor wafers.

[0004] Therefore, we propose a heating device and a chemical vapor deposition (CVD) apparatus to solve the above problems. Summary of the Invention

[0005] The purpose of this application is to provide a heating device and a chemical vapor deposition (CVD) apparatus, which allows for flexible switching between three heating methods: resistance heater, induction heater, and infrared heater. This allows for adaptability to the CVD requirements of semiconductor wafers made of various materials, compatibility with processing needs across multiple temperature ranges, and fulfillment of heating requirements for different deposition processes. Furthermore, it enables control of two insulated chambers to reciprocate within the reaction chamber around a vertical axis, ensuring uniform heating of all areas of the semiconductor wafer. This improves the uniformity and comprehensiveness of heating the semiconductor wafer placed on the conductive support, effectively reducing the thickness deviation of the deposited thin film on the semiconductor wafer, thereby enhancing the quality of the CVD process on the semiconductor wafer.

[0006] The above-mentioned technical objective of this application is achieved through the following technical solution: a heating device for a chemical vapor deposition equipment, comprising a vertical shaft, a crossbeam fixedly installed at the bottom end of the vertical shaft, two heat insulation boxes fixedly installed at the bottom of the crossbeam, each heat insulation box being equipped with a heating mechanism, the two sets of heating mechanisms being symmetrically distributed, each heating mechanism comprising three U-shaped rods, three inner baffles, three vertical plates, three outer baffles, a resistance heater, an induction heater, an infrared heater, and an adjustment component, the three U-shaped rods being fixedly installed on the bottom inner wall of the heat insulation box and arranged at equal intervals, the three inner baffles being slidably sleeved on the corresponding U-shaped rods, the three vertical plates being fixedly installed at the bottom of the corresponding inner baffles, three through holes arranged at equal intervals being opened on the bottom inner wall of the heat insulation box, the bottom ends of the three vertical plates passing through the corresponding through holes, the three outer baffles being fixedly installed at the bottom ends of the corresponding vertical plates, the resistance heater, the induction heater, and the infrared heater being fixedly installed on one side of the corresponding vertical plate, and a connecting shaft being provided between the two heat insulation boxes.

[0007] A further provision of this application is that: two symmetrically arranged fixing rings are fixedly sleeved on the U-shaped rod, and springs are fixedly installed at the bottom of each fixing ring. The bottom ends of the two springs are fixedly connected to the top of the inner baffle, and the two springs are sleeved on the U-shaped rod.

[0008] A further configuration of this application is as follows: the adjustment assembly includes an adjustment shaft, three cams, a handle, and a locking bolt. The adjustment shaft is rotatably mounted inside the heat insulation box and located above the inner baffle. The three cams are all fixedly sleeved on the adjustment shaft, and the three cams are respectively located above the corresponding inner baffles. The included angle between two adjacent cams is set to 120°. Both ends of the adjustment shaft extend outside the heat insulation box. The handle is fixedly mounted on one end of the adjustment shaft. The locking bolt is threaded onto the handle. Three threaded grooves are provided on the outer wall of the heat insulation box near the handle. The three threaded grooves are distributed in a ring with equal spacing around the adjustment shaft. One end of the locking bolt is threaded into one of the threaded grooves.

[0009] A further feature of this application is that the two ends of the linkage shaft are respectively fixedly connected to the ends of the two adjusting shafts that are close to each other.

[0010] A further feature of this application is that three equally spaced, annularly distributed indicator ridges are fixedly installed on the side of the handle away from the heat insulation box, and the three indicator ridges correspond one-to-one with the orientation of the three cams.

[0011] A further feature of this application is that the inner baffle and the outer baffle have the same shape and size, and the cross-sectional size of the through hole is smaller than that of the inner baffle.

[0012] A further feature of this application is that: each side of the heat insulation box is provided with a mounting hole, and both ends of the adjusting shaft are fixedly fitted with a high-temperature resistant bearing, and the outer rings of the two high-temperature resistant bearings are respectively fixedly connected to the inner wall of the corresponding mounting hole.

[0013] A further configuration of this application is as follows: an L-shaped plate is provided above the crossbeam, and a driving assembly is provided between the L-shaped plate and the crossbeam. The driving assembly includes a horizontal guide rail, a sliding plate, a rack, a gear, a strip frame, a motor, a rotating arm, and a driving pin. The horizontal guide rail is located behind the vertical shaft. The sliding plate is slidably fitted on the top of the horizontal guide rail. The rack is fixedly installed on the front side wall of the sliding plate. The gear is fixedly fitted on the vertical shaft and meshes with the rack. The strip frame is fixedly installed on the right end of the rack. The top and bottom of the strip frame are both open structures. The motor is fixedly installed on the top inner wall of the L-shaped plate. The rotating arm is fixedly installed on the output shaft end of the motor. The driving pin is fixedly installed on the bottom of the rotating arm, and the axis of the driving pin does not coincide with the axis of the output shaft end of the motor. The bottom end of the driving pin slides through the strip frame.

[0014] A further feature of this application is that the inner wall of the strip frame and the outer surface of the drive pin are both smooth surfaces.

[0015] To achieve the above objectives, this application also provides a chemical vapor deposition apparatus, which includes a heating device for a chemical vapor deposition apparatus as described in any of the preceding claims.

[0016] The further configuration of this application is as follows: the chemical vapor deposition apparatus also includes: a deposition apparatus body, a cabinet door, an inlet pipe, an exhaust pipe, a conductive support frame, and a temperature sensor. The deposition apparatus body has a reaction chamber with an open front side. The cabinet door is hinged and rotated on the outer front wall of the deposition apparatus body, sealing the opening of the reaction chamber. The inlet pipe is fixedly installed on the top left side of the deposition apparatus body, and there are at least two inlet pipes. A one-way solenoid valve is fixedly installed on the inlet pipe. The exhaust pipe is fixedly installed on the right side of the deposition apparatus body. A one-way solenoid valve is fixedly installed. The air inlet pipe and exhaust pipe are both connected to the reaction chamber. The conductive support frame is detachably fixedly installed on the bottom inner wall of the reaction chamber. The temperature sensor is fixedly installed on the bottom inner wall of the reaction chamber. The top inner wall of the reaction chamber has a mounting hole. A high-temperature bearing is fixedly sleeved on the vertical shaft. The outer wall of the high-temperature bearing is fixedly connected to the inner wall of the mounting hole. The crossbeam and two heat insulation boxes are located inside the reaction chamber. The L-shaped plate and drive assembly are located above the deposition equipment body. The L-shaped plate and the horizontal guide rail are fixedly connected to the top of the deposition equipment body.

[0017] A further feature of this application is that the conductive support frame is located between the two insulated boxes and below the linkage shaft. The conductive support frame includes a support mesh plate and three legs. The three legs are all fixedly installed on the bottom of the support mesh plate and are evenly distributed. The bottom ends of the three legs are all fixedly connected to the bottom inner wall of the reaction chamber by graphite bolts.

[0018] This application includes at least one of the following beneficial technical effects: 1. This application designs a flexible switching between three heating methods: resistance heater, induction heater, and infrared heater. It can adapt to the chemical vapor deposition needs of various semiconductor wafers, such as silicon, silicon carbide, gallium nitride, sapphire, and flexible semiconductors, which are conductive, insulating, and low-temperature sensitive. This solves the problem of limited material compatibility caused by the single heating method of traditional equipment.

[0019] 2. This application is designed to allow flexible switching between three heating methods: resistance heater, induction heater, and infrared heater. It can meet the low-temperature process of 150-600℃ such as flexible semiconductor thin film deposition and ITO coating, as well as the medium-temperature process of 200-800℃ such as metal thin film and oxide thin film, and can also realize the high-temperature process of 800-2000℃ such as silicon carbide epitaxy and diamond deposition. One device can be compatible with the processing needs of multiple temperature ranges, eliminating the need for users to purchase special equipment separately, and greatly reducing equipment procurement and maintenance costs.

[0020] 3. This application is designed to allow flexible switching between three heating methods: resistance heater, induction heater, and infrared heater. It can be matched with various process types such as atmospheric pressure chemical vapor deposition, low pressure chemical vapor deposition, plasma-enhanced chemical vapor deposition, and rapid thermochemical vapor deposition, to meet the heating requirements of different deposition processes and improve the equipment's application scenario coverage.

[0021] 4. This application designs an adjustment component, with three cams on the adjustment component, and the included angle between two adjacent cams is 120°. The three indicator protrusions on the handle are designed to correspond one-to-one with the orientation of the three cams, which can intuitively indicate the currently activated heating mode, making it easy for staff to quickly identify and switch the heater. It can quickly achieve accurate switching between the three types of heaters. With the secure fixing of the locking bolt, it ensures efficient and stable switching of heating modes.

[0022] 5. The drive component designed in this application can control the two heat insulation boxes to reciprocate within the reaction chamber around the vertical axis, ensuring uniform heating of all areas of the semiconductor wafer, improving the uniformity and comprehensiveness of heating the semiconductor wafer placed on the conductive support, effectively reducing the thickness deviation of the deposited thin film on the semiconductor wafer, and thus improving the quality of chemical vapor deposition processing of the semiconductor wafer. Attached Figure Description

[0023] Figure 1This is a three-dimensional structural schematic diagram of the first embodiment of the heating device for a chemical vapor deposition equipment provided in this application; Figure 2 This is a bottom-view perspective view of the first embodiment of the heating device for a chemical vapor deposition apparatus provided in this application; Figure 3 This is a front cross-sectional perspective view of the first embodiment of the heating device for a chemical vapor deposition equipment provided in this application. Figure 4 This is a front view cross-sectional perspective three-dimensional structural diagram of the heat insulation box in the first embodiment of the heating device for chemical vapor deposition equipment provided in this application; Figure 5 This is a three-dimensional structural schematic diagram of two adjusting components and a linkage shaft in the first embodiment of the heating device for a chemical vapor deposition equipment provided in this application; Figure 6 This is a three-dimensional structural schematic diagram of the adjustment component in the first embodiment of the heating device for chemical vapor deposition equipment provided in this application; Figure 7 This is a three-dimensional structural schematic diagram of the second embodiment of the heating device for a chemical vapor deposition apparatus provided in this application; Figure 8 This is a first-view perspective three-dimensional structural diagram of the heating device for chemical vapor deposition equipment in the second embodiment of the present application, showing the removal of the L-shaped plate; Figure 9 This is a second-view perspective three-dimensional structural diagram of the heating device for chemical vapor deposition equipment provided in the second embodiment of the present application, showing the removal of the L-shaped plate; Figure 10 This is a three-dimensional structural schematic diagram of the driving component in the second embodiment of the heating device for chemical vapor deposition equipment provided in this application; Figure 11 This is a three-dimensional structural schematic diagram of the third embodiment of the chemical vapor deposition apparatus provided in this application; Figure 12 This is a front cross-sectional perspective view of the third embodiment of the chemical vapor deposition apparatus provided in this application. Figure 13 This is a three-dimensional structural schematic diagram of the conductive support frame in the third embodiment of the chemical vapor deposition equipment provided in this application.

[0024] In the diagram, 1. Vertical shaft; 2. Horizontal beam; 3. Insulation box; 4. U-shaped rod; 5. Inner baffle; 6. Vertical plate; 7. Through hole; 8. Outer baffle; 9. Resistance heater; 10. Induction heater; 11. Infrared heater; 12. Fixing ring; 13. Spring; 14. Adjustment assembly; 141. Adjustment shaft; 142. Cam; 143. Rotary handle; 144. Locking bolt; 145. Indicating ridge; 15. Linkage shaft; 16. Threaded groove; 17. L-shaped plate; 18. 181. Drive assembly; 182. Horizontal guide rail; 183. Slide plate; 184. Rack; 185. Gear; 186. Strip frame; 187. Motor; 188. Rotating arm; 189. Drive pin; 100. Deposition equipment body; 21. Reaction chamber; 22. Cabinet door; 23. Air inlet pipe; 24. One-way solenoid valve; 25. Exhaust pipe; 26. One-way solenoid valve; 27. Conductive support frame; 281. Support mesh plate; 282. Support leg; 283. Temperature sensor. Detailed Implementation

[0025] The technical solution of this application will be clearly and completely described below with reference to specific embodiments. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the scope of protection of this application. Example 1

[0026] See Figures 1-6 In the first embodiment of this application, a heating device for a chemical vapor deposition apparatus includes: a vertical shaft 1, a crossbeam 2 fixedly installed at the bottom end of the vertical shaft 1, and two heat insulation boxes 3 fixedly installed at the bottom of the crossbeam 2. Each of the two heat insulation boxes 3 is equipped with a heating mechanism, which is symmetrically distributed. Each heating mechanism includes three U-shaped rods 4, three inner baffles 5, three vertical plates 6, three outer baffles 8, a resistance heater 9, an induction heater 10, an infrared heater 11, and an adjustment assembly 14. The three U-shaped rods 4 are all fixedly installed on the bottom inner wall of the heat insulation box 3 and arranged at equal intervals. The three inner baffles 5 are slidably sleeved on... On the corresponding U-shaped rod 4, three vertical plates 6 are fixedly installed at the bottom of the corresponding inner baffle 5. Three through holes 7 are arranged at equal intervals on the bottom inner wall of the heat insulation box 3. The bottom ends of the three vertical plates 6 pass through the corresponding through holes 7. Three outer baffles 8 are fixedly installed at the bottom ends of the corresponding vertical plates 6. The resistance heater 9, the induction heater 10, and the infrared heater 11 are fixedly installed on one side of the corresponding vertical plate 6. The heat insulation box 3, the inner baffle 5, the vertical plates 6, and the outer baffle 8 are all made of the same material, which can all be made of zirconia ceramic material, which has the advantages of ultra-high temperature resistance, low thermal conductivity, good chemical stability, and high structural strength.

[0027] In this embodiment, two symmetrically arranged fixing rings 12 are fixedly sleeved on the U-shaped rod 4. A spring 13 is fixedly installed at the bottom of each of the two fixing rings 12. The bottom ends of the two springs 13 are fixedly connected to the top of the inner baffle 5. The two springs 13 are sleeved on the U-shaped rod 4. By utilizing the elastic force of the springs 13, the inner baffle 5 and the vertical plate 6 and outer baffle 8 below it can be controlled to automatically rise and reset.

[0028] In this embodiment, the adjustment assembly 14 includes an adjustment shaft 141, three cams 142, a handle 143, and a locking bolt 144. The adjustment shaft 141 is rotatably mounted inside the heat insulation box 3 and located above the inner baffle 5. The three cams 142 are all fixedly sleeved on the adjustment shaft 141, and the three cams 142 are respectively located above the corresponding inner baffle 5. The included angle between two adjacent cams 142 is set to 120°. Both ends of the adjustment shaft 141 extend outside the heat insulation box 3. The handle 143 is fixedly mounted on one end of the adjustment shaft 141. The locking bolt 144 is threaded onto the handle 143. The locking bolt 144 is made of graphite bolt, which has the advantages of high temperature resistance and high strength. Three threaded grooves 16 are opened on the outer wall of the heat insulation box 3 near the handle 143. The three threaded grooves 16 are evenly spaced in a ring around the adjustment shaft 141. One end of the locking bolt 144 is threaded into one of the threaded grooves 16. The handle 143 is used to conveniently rotate the adjustment shaft 141 and the three cams 142. 2. By designing the included angle between two adjacent cams 142 to be 120°, the adjusting shaft 141 drives the three cams 142 to rotate simultaneously. During this rotation, the three cams 142 sequentially push the corresponding inner baffle 5 vertically downwards, thereby pushing the resistance heater 9, induction heater 10, and infrared heater 11 out of the heat insulation box 3 in sequence. This achieves the function of adjusting the positions of the resistance heater 9, induction heater 10, and infrared heater 11, facilitating the switching of their use. This satisfies the heating requirements of semiconductor wafers of different materials (silicon, silicon carbide, gallium nitride, sapphire, flexible semiconductors, etc.) for chemical vapor deposition. The locking bolt 144, in conjunction with the threaded connection of the threaded groove 16, securely locks the rotating handle 143, restricting its rotation and ensuring that the adjusted resistance heater 9, induction heater 10, and infrared heater 11 do not shift during use. Figure 4From the perspective of the angle, the cam 142 located on the far right (i.e., near the handle 143) is in a vertical state, and the small end of the cam 142 presses down the inner baffle 5 located on the far right until it is tightly pressed against the bottom inner wall of the heat insulation box 3. At this time, the inner baffle 5 located on the far right seals and blocks the through hole 7 on the far right. The two springs 13 located on the far right are in a state of tension, generating elastic force. The infrared heater 11 is located outside the heat insulation box 3. At the same time, the cam 142 located in the middle and the cam 142 located on the far left (i.e., away from the handle 143) are both in an inclined state. The small end of the cam 142 located in the middle is inclined backward, and the small end of the cam 142 located on the far left is inclined forward. The cam 142 located on the far right is in a vertical state. The angle between the middle cam 142 and the leftmost cam 142 is 120°. The angle between the leftmost cam 142 and the middle cam 142 is also 120°. At the same time, the two springs 13 in the middle and the two springs 13 on the left are in a state of no force or slight stretching at their natural length. The outer baffle 8 in the middle and the outer baffle 8 on the left are both in contact with the bottom surface of the heat insulation box 3. The outer baffle 8 in the middle and the outer baffle 8 on the left respectively seal the through hole 7 in the middle and the through hole 7 on the left, thereby ensuring that when the infrared heater 11 is used, the resistance heater 9 and the induction heater 10 can be sealed inside the heat insulation box 3 and will not be damaged.

[0029] In this embodiment, it should be noted that the resistance heater 9 is based on Joule's law, which states that when current passes through a conductive material with a certain resistance, heat loss occurs due to electron collisions within the material, thus converting electrical energy into heat energy. This heat is transferred to the deposition area through both thermal conduction and thermal radiation, thereby controlling the reaction temperature. It is suitable for medium-low temperature deposition (200-800℃), such as metal thin films (e.g., copper, nickel, chromium), oxide thin films (e.g., SiO2, Al2O3), and nitride thin films (e.g., Si3N4). It is also suitable for high-temperature deposition (800-1800℃), such as carbon-based thin films (e.g., diamond, diamond-like carbon DLC), silicon carbide (SiC) thin films, and aluminum nitride (AlN) thin films. It meets the requirements of atmospheric pressure chemical vapor deposition and low-pressure chemical vapor deposition, and is suitable for mass production scenarios with moderate requirements for heating uniformity and cost sensitivity (e.g., semiconductor packaging, photovoltaic cell coating), as well as scenarios where the deposition substrate is a high-temperature resistant material such as metal, ceramic, or glass.

[0030] The induction heater 10 is based on the laws of electromagnetic induction and the eddy current effect. A high-frequency power supply (typically 10kHz-1MHz) supplies alternating current to the induction coil, generating an alternating magnetic field. This magnetic field penetrates the furnace body, inducing closed eddy currents within the metal or conductive substrate (or a specialized induction target, such as a graphite inductor) placed in the magnetic field. These eddy currents are converted into heat energy due to resistance loss in the conductive material, achieving internal heating without direct contact between the heating element and the substrate. It is suitable for high-temperature deposition (800-2000℃), such as refractory metal thin films (e.g., tungsten, molybdenum, tantalum), nitride superhard thin films (e.g., TiN, CrN), and carbide thin films. It can be used for (such as TiC, WC), single crystal / polycrystalline SiC thin films; it is also suitable for deposition processes with extremely high cleanliness requirements, such as high-purity SiO2 and Si3N4 thin films for semiconductor chips, and high-purity oxide thin films for optical devices; it meets the requirements of plasma-enhanced chemical vapor deposition and hot-wall CVD equipment, and meets the requirements of scenarios with high temperature uniformity requirements (within ±5℃) and strict cleanliness requirements of deposition environment (such as semiconductor wafer manufacturing and high-end optical coating), and meets the requirements of processes where the substrate is a conductive material or an insulating material that can be indirectly heated by an inductor, and requires rapid heating and cooling (heating rate can reach 50-100℃ / min).

[0031] The infrared heater 11 is based on the principle of thermal radiation and light absorption. When the heating element (such as a halogen lamp, infrared tube, or carbon filament lamp) is energized, it generates infrared radiation of a specific wavelength (typically 2-15 μm, corresponding to the mid-infrared band). This infrared light directly irradiates the deposition substrate and reaction area. After the substrate and reactant gas molecules absorb the infrared photon energy, their thermal motion intensifies, resulting in a temperature increase. This is a radiation heating method and requires no intermediate heat transfer medium. Applicable materials: Suitable for rapid deposition at medium to low temperatures (150-800℃), such as polymer films (e.g., polypyrrole, polythiophene), oxide transparent conductive films (e.g., ITO, AZO), metal films (e.g., silver, gold), and low-temperature SiN. x Thin films; also suitable for depositions sensitive to thermal damage to the substrate, such as thin film deposition on flexible substrates (e.g., polyimide PI) and low-temperature coating on glass substrates; meets the requirements of rapid thermochemical vapor deposition, high-frequency heating and cooling (e.g., pulse heating process), and high process flexibility (e.g., laboratory research and development, small-batch customized production); meets the requirements of deposition substrates that are flexible materials, glass or low-temperature sensitive materials, and have high requirements for deposition rate (e.g., photovoltaic thin films, display panel coating).

[0032] By allowing flexible switching between three heating methods—resistance heater 9, induction heater 10, and infrared heater 11—this design comprehensively covers the temperature requirements of semiconductor wafer materials and processes. For example, when performing chemical vapor deposition on conductive wafers (silicon, silicon carbide), induction heater 10 (direct eddy current heating, high cleanliness) or resistance heater 9 (medium-high temperature deposition, low cost) can be used to heat the conductive wafers. When performing chemical vapor deposition on insulating wafers (sapphire, flexible conductors), infrared heater 11 (rapid heating and cooling, avoiding thermal damage) or resistance heater 9 (moderate temperature uniformity) can be used to heat the insulating wafers. For semiconductor wafers requiring chemical vapor deposition, the design can be adapted to various processes. When conducting high-temperature (800-1800℃, such as silicon carbide epitaxy and diamond deposition) chemical vapor deposition on semiconductor wafers, a resistance heater 9 or an induction heater 10 can be used to heat the semiconductor wafer. When conducting low-temperature (150-600℃, such as flexible semiconductor thin film deposition and ITO coating) chemical vapor deposition on semiconductor wafers, an infrared heater 11 or a resistance heater 9 can be used. This solves the problems of limited heating methods and material compatibility of existing chemical vapor deposition equipment, enabling a single chemical vapor deposition equipment to meet the processing needs of multiple materials and multiple temperature ranges, enhancing the applicability of the equipment, and reducing the equipment procurement cost for users. By allowing flexible switching between three heating methods—resistance heater 9, induction heater 10, and infrared heater 11—the system enhances process flexibility and adaptability for R&D or mass production. For example, to meet the core requirements of different deposition processes (LPCVD, APCVD, RTCVD), the heating method can be flexibly switched. When rapid heating and cooling are required (such as pulse deposition or process optimization in the R&D stage), infrared heater 11 can be used, offering a high heating rate and short response time. When high cleanliness and uniformity are required (such as semiconductor wafer mass production or high-purity thin film deposition), induction heater 10 can be selected, offering non-contact heating and no contamination from heating elements. When low-cost, stable mass production is required (such as photovoltaic cell coating or semiconductor packaging), resistance heater 9 can be selected, offering a simple structure, low maintenance costs, and high reliability for continuous operation. This satisfies the dual needs of laboratory R&D and factory mass production, expands the equipment's application scenarios, and enhances its market competitiveness. By designing and flexibly switching between three heating methods—resistance heater 9, induction heater 10, and infrared heater 11—it can optimize thin film deposition quality and adapt to the needs of differentiated performance. The differences in heat transfer characteristics of different heating methods can be used to specifically optimize the quality of the deposited thin film. For example, when high precision is required for the thickness uniformity of the deposited thin film (such as wafer-level deposition), induction heater 10 or resistance heater 9 can be selected; when a high deposition rate is required (such as large-area film deposition), infrared heater 11 can be selected; when low defect density is required (such as semiconductor device core layer deposition), induction heater 10 or resistance heater 9 can be selected. Thus, through precise matching of heating methods, the performance of the deposited thin film can be optimized, solving the problem that a single heating method cannot meet the multi-dimensional quality requirements of deposited thin films.

[0033] In this embodiment, a connecting shaft 15 is provided between the two heat insulation boxes 3. The two ends of the connecting shaft 15 are fixedly connected to the ends of the two adjusting shafts 141 that are close to each other. By designing the connecting shaft 15, it can be ensured that the two adjusting shafts 141 rotate synchronously, so that the same type of heater in the two heat insulation boxes 3 can be moved out of the corresponding heat insulation box 3 for use. For example, the resistance heater 9 in the two heat insulation boxes 3 can be moved out for use at the same time, or the induction heater 10 in the two heat insulation boxes 3 can be moved out for use at the same time, or the infrared heater 11 in the two heat insulation boxes 3 can be moved out for use at the same time.

[0034] In this embodiment, three equally spaced circularly distributed indicator protrusions 145 are fixedly installed on the side of the rotating handle 143 away from the heat insulation box 3. The included angle between two adjacent indicator protrusions 145 is 120°. The three indicator protrusions 145 correspond one-to-one with the orientation of the three cams 142. The design is such that when one of the indicator protrusions 145 rotates with the rotating handle 143 to the bottom and is in a vertical state, one of the cams 142 will be in a vertical state, and the small end of this cam 142 will face downwards, which helps the staff to quickly select the heater to be used.

[0035] In this embodiment, the inner baffle 5 and the outer baffle 8 have the same shape and size, and the cross-sectional size of the through hole 7 is smaller than that of the inner baffle 5, which can ensure that the inner baffle 5 or the outer baffle 8 can completely seal the through hole 7.

[0036] In this embodiment, mounting holes are provided on both sides of the heat insulation box 3, and high-temperature bearings are fixedly sleeved on both ends of the adjusting shaft 141. The outer rings of the two high-temperature bearings are fixedly connected to the inner walls of the corresponding mounting holes. The design of the high-temperature bearings can ensure the smooth and stable rotation of the adjusting shaft 141.

[0037] In this embodiment, with the above structure, when using the heating device and chemical vapor deposition equipment for chemical vapor deposition equipment provided in this application, first unscrew the locking bolts 144 on the two handles 143 out of the corresponding threaded grooves 16, thereby releasing the fixation of the two handles 143. Hold one of the handles 143 to drive the adjusting shaft 141 fixedly connected to it to rotate, and the linkage shaft 15 synchronously drives the adjusting shaft 141 of the other heat insulation box 3 to rotate, so as to ensure that the heaters in the two heat insulation boxes 3 switch synchronously. During the rotation of the adjusting shaft 141, since the three cams 142 on the same adjusting shaft 141 are distributed at a 120° angle, they will push the corresponding inner baffle 5 vertically downward in sequence when rotating. The two compression springs 13 on the inner baffle 5 that are pushed downward are stretched and deformed to generate elastic force to store energy. The downward moving inner baffle 5 will drive the vertical plate 6 at its bottom and the heater installed on the vertical plate 6 to gradually pass through the through hole 7 and extend out of the heat insulation box 3. When the target heaters required by the resistance heater 9, induction heater 10 and infrared heater 11 are fully extended out of the heat insulation box 3, the indicator protrusion 145 on the handle 143 is aligned with the cam 142 corresponding to the heater (both are vertically downward). Then, the two locking bolts 144 are tightened into the corresponding thread grooves 16 to lock the handle 143 and the adjusting shaft 141, preventing the heater that has been adjusted to the correct position from shifting. At the same time, the inner baffle 5 on the top of the heater outside the heat insulation box 3 is sealed to block the corresponding through hole 7, and the two outer baffles 8 at the bottom of the two heaters inside the heat insulation box 3 are sealed to block their respective through holes 7, so that the two heaters that are not pulled out of the heat insulation box 3 can be sealed and protected. Furthermore, by rotating the handle 143 120°, the same type of heater in the two heat insulation boxes 3 can be brought out for use. For example, the resistance heater 9 in the two heat insulation boxes 3 can be brought out for use at the same time, or the induction heater 10 in the two heat insulation boxes 3 can be brought out for use at the same time, or the infrared heater 11 in the two heat insulation boxes 3 can be brought out for use at the same time. The operation is simple and convenient, and the semiconductor wafer can be heated. Moreover, the three types of heaters can be switched as needed to meet the requirements of different semiconductor wafer materials, temperatures, and processes. Example 2

[0038] Based on the heating device for a chemical vapor deposition apparatus provided in the first embodiment of this application, the second embodiment of this application proposes another heating device for a chemical vapor deposition apparatus. The second embodiment is merely a preferred embodiment of the first embodiment, and the implementation of the second embodiment will not affect the separate implementation of the first embodiment.

[0039] The second embodiment of this application will be further described below with reference to the accompanying drawings and embodiments.

[0040] See Figures 7-10 In the heating device and chemical vapor deposition equipment: an L-shaped plate 17 is provided above the crossbeam 2, and a drive assembly 18 is provided between the L-shaped plate 17 and the crossbeam 2. The drive assembly 18 includes a horizontal guide rail 181, a sliding plate 182, a rack 183, a gear 184, a strip frame 185, a motor 186, a rotating arm 187, and a drive pin 188. The horizontal guide rail 181 is located behind the vertical shaft 1. The sliding plate 182 is slidably sleeved on the top of the horizontal guide rail 181, and the rack 183 is fixedly installed on... On the front side wall of the slide plate 182, a gear 184 is fixedly sleeved on the vertical shaft 1, and the gear 184 meshes with the rack 183. A strip frame 185 is fixedly installed on the right end of the rack 183, and the top and bottom of the strip frame 185 are open structures. A motor 186 is fixedly installed on the top inner wall of the L-shaped plate 17. A rotating arm 187 is fixedly installed on the output shaft end of the motor 186. A drive pin 188 is fixedly installed on the bottom of the rotating arm 187, and the axis of the drive pin 188 is not aligned with the axis of the output shaft end of the motor 186. The bottom end of the drive pin 188 slides through the strip frame 185. The motor 186 is a low-speed motor used to control the rotation of the rotating arm 187, causing the drive pin 188 to rotate around the output shaft of the motor 186. With the sliding connection between the slide plate 182 and the horizontal guide rail 181, the rotational motion of the drive pin 188 can drive the strip frame 185 and the rack 183 to reciprocate horizontally. Furthermore, by utilizing the meshing transmission action of the rack 183 and the gear 184, the reciprocating rotation of the vertical shaft 1 can be controlled. The vertical axis 1 drives the horizontal beam 2 and the two heat insulation boxes 3 to reciprocate within the reaction chamber 20, ensuring uniform heating of all areas of the semiconductor wafer. This improves the uniformity and comprehensiveness of heating the semiconductor wafer placed on the conductive support frame 26, effectively reducing the thickness deviation of the deposited thin film on the semiconductor wafer. It is especially suitable for scenarios with high uniformity requirements, such as wafer-level deposition. The inner sidewall of the strip frame 185 and the outer surface of the drive pin 188 are both smooth, ensuring the smoothness of the drive pin 188 in pushing the strip frame 185 to reciprocate.

[0041] In this embodiment, with the above structure, the heating device and chemical vapor deposition equipment provided in this application, when one of the three heaters (resistance heater 9, induction heater 10, and infrared heater 11) is moved out of the heat insulation box 3, during the heating of the semiconductor wafer, the motor 186 is controlled to run. The motor 186 drives the rotating arm 187 to rotate, so that the drive pin 188 rotates around the output shaft of the motor 186. The drive pin 188 pushes the strip frame 185 to drive the rack 183 to move horizontally back and forth along the horizontal guide rail 181. The rack 183 meshes with the gear 184 on the vertical shaft 1, driving the vertical shaft 1, the horizontal beam 2, and the two heat insulation boxes to rotate back and forth in the reaction chamber 20. This ensures that the semiconductor wafer is heated evenly and uniformly, and that all areas of the semiconductor wafer are heated evenly. This improves the uniformity and comprehensiveness of the heating of the semiconductor wafer and effectively reduces the thickness deviation of the deposited thin film on the semiconductor wafer. Example 3

[0042] Based on the heating device for a chemical vapor deposition apparatus provided in the first and second embodiments of this application, the third embodiment of this application proposes a chemical vapor deposition apparatus. The third embodiment is merely a preferred embodiment of the first or second embodiment, and its implementation will not affect the individual implementation of the first or second embodiment.

[0043] The third embodiment of this application will be further described below with reference to the accompanying drawings and embodiments.

[0044] See Figures 11-13 The chemical vapor deposition apparatus provided in this application includes: a heating device for a chemical vapor deposition apparatus as described in any of the above embodiments.

[0045] In this embodiment, the chemical vapor deposition apparatus further includes: a deposition apparatus body 19, a cabinet door 21, an air inlet pipe 22, an exhaust pipe 24, a conductive support frame 26, and a temperature sensor 27. The deposition apparatus body 19 has a reaction chamber 20 with an open front side. The cabinet door 21 is hinged and rotated on the outer front wall of the deposition apparatus body 19, sealing the opening of the reaction chamber 20. The air inlet pipe 22 is fixedly installed on the top left side of the deposition apparatus body 19. There are at least two air inlet pipes 22, and a one-way solenoid valve is fixedly installed on each air inlet pipe 22. The inlet pipe 22 is designed to deliver the required gaseous compound into the reaction chamber 20 for chemical vapor deposition of semiconductor wafers. The end of the inlet pipe 22 furthest from the deposition equipment body 19 is fixedly connected to the outlet of the gaseous compound storage tank. The exhaust pipe 24 is fixedly installed on the right side of the deposition equipment body 19. A one-way solenoid valve 25 is fixedly installed on the exhaust pipe 24. The exhaust pipe 24 is designed to discharge excess gaseous compound from the reaction chamber 20. The end of the exhaust pipe 24 furthest from the deposition equipment body 19 is connected to a gaseous compound recovery tank or a recovery... The air inlet of the processing equipment is fixedly connected to facilitate the collection or recovery of residual gaseous compounds. Both the air inlet pipe 22 and the exhaust pipe 24 are connected to the reaction chamber 20. A conductive support frame 26 is detachably and fixedly installed on the bottom inner wall of the reaction chamber 20. The conductive support frame 26 is designed to support the semiconductor wafer to be chemically vapor-deposited, facilitating comprehensive heating and chemical vapor deposition of the semiconductor wafer. A temperature sensor 27 is fixedly installed on the bottom inner wall of the reaction chamber 20. The temperature sensor 27 is used for real-time monitoring of the temperature inside the reaction chamber 20. The top inner wall is provided with a second mounting hole. A second high-temperature bearing is fixedly sleeved on the vertical shaft 1. The outer wall of the second high-temperature bearing is fixedly connected to the inner wall of the second mounting hole. The crossbeam 2 and the two heat insulation boxes 3 are located inside the reaction chamber 20. The L-shaped plate 17 and the drive assembly 18 are located above the deposition equipment body 19. The L-shaped plate 17 and the horizontal guide rail 181 are fixedly connected to the top of the deposition equipment body 19. It should be noted that both the first and second high-temperature bearings can be commercially available graphite bearings with a temperature range of 1000-2000℃ and a long service life.

[0046] In this embodiment, the conductive support frame 26 is located between the two heat insulation boxes 3 and below the linkage shaft 15. The conductive support frame 26 includes a support mesh plate 261 and three support legs 262. The three support legs 262 are all fixedly installed on the bottom of the support mesh plate 261 and are evenly distributed. The bottom ends of the three support legs 262 are fixedly connected to the bottom inner wall of the reaction chamber 20 by graphite bolts. The support mesh plate 261 and the support legs 262 are both made of aluminum nitride ceramic material. A nickel-chromium alloy or titanium-tungsten alloy conductive layer can be coated on the surface of the support mesh plate 261. The surface of the support mesh plate 261 has a circular array of holes with a diameter of 3-5mm, which can simultaneously accommodate the heating methods of resistance heater 9, induction heater 10 and infrared heater 11. It is suitable for semiconductor wafers of various materials such as silicon, silicon carbide, gallium nitride, sapphire and flexible semiconductors. The three support legs 262 are fixed by graphite bolts to facilitate the disassembly and replacement of the entire conductive support frame 26.

[0047] In this embodiment, it should be noted that a controller is also installed on the outer wall of the deposition equipment body 19. The controller is equipped with a display screen and multiple control buttons. The resistance heater 9, induction heater 10, infrared heater 11, motor 186, one-way solenoid valve 23, one-way solenoid valve 25 and temperature sensor 27 are all electrically connected to the controller. The multiple control buttons can control the power supply and operation of the resistance heater 9, induction heater 10, infrared heater 11, motor 186, one-way solenoid valve 23, one-way solenoid valve 25 and temperature sensor 27 respectively. The temperature value monitored by the temperature sensor 27 can be displayed on the display screen for easy viewing by the staff.

[0048] In this embodiment, the vertical shaft 1 is a hollow shaft, the horizontal beam 2 has an internal hollow structure, the bottom end of the vertical shaft 1 is connected to the inside of the horizontal beam 2, and the top of both heat insulation boxes 3 are provided with wire holes that are connected to the inside of the horizontal beam 2, so as to facilitate the wiring of the resistance heater 9, the induction heater 10, and the infrared heater 11.

[0049] In this embodiment, with the above structure, the chemical vapor deposition equipment provided in this application, when in use, places the semiconductor wafer to be processed on the carrier mesh plate 261 of the conductive carrier 26, adjusts the required heater according to Embodiment 1, closes the cabinet door 21, and can use the heating device for chemical vapor deposition equipment to uniformly and comprehensively heat the semiconductor wafer. At the same time, by opening the one-way solenoid valve 23, the required gaseous compound can be delivered into the reaction chamber 20 through the air inlet pipe 22, which can be used to perform epitaxial reaction or thin film deposition on the semiconductor wafer. The remaining gas after the reaction can be discharged to the outside of the deposition equipment body 19 through the exhaust pipe 24 by opening the one-way solenoid valve 25.

[0050] The heating device and chemical vapor deposition equipment provided in this application facilitate flexible switching between three heating methods: resistance heater 9, induction heater 10, and infrared heater 11. They can adapt to the chemical vapor deposition requirements of semiconductor wafers of various materials, are compatible with processing requirements in multiple temperature ranges, and meet the heating requirements of different deposition processes. Furthermore, they can control the two heat-insulated boxes 3 to reciprocate within the reaction chamber 20 around the vertical axis 1, ensuring uniform heating of all areas of the semiconductor wafer, improving the uniformity and comprehensiveness of heating the semiconductor wafer placed on the conductive support 26, effectively reducing the thickness deviation of the deposited film on the semiconductor wafer, and thus improving the quality of chemical vapor deposition processing of the semiconductor wafer.

[0051] The heating device and chemical vapor deposition (CVD) apparatus provided in this application have been described in detail above. Specific embodiments have been used to illustrate the principles and implementation methods of this application. These embodiments are merely illustrative and are intended to help understand the method and core concepts of this application. It should be noted that those skilled in the art can make various improvements and modifications to this application without departing from its principles, and these improvements and modifications also fall within the scope of protection of the claims of this application.

Claims

1. A heating device for a chemical vapor deposition apparatus, characterized in that, The structure includes a vertical shaft (1), with a horizontal beam (2) fixedly installed at the bottom end of the vertical shaft (1). Two heat insulation boxes (3) are fixedly installed at the bottom of the horizontal beam (2). Each of the two heat insulation boxes (3) is equipped with a heating mechanism. The two sets of heating mechanisms are symmetrically distributed. The heating mechanism includes three U-shaped rods (4), three inner baffles (5), three vertical plates (6), three outer baffles (8), a resistance heater (9), an induction heater (10), an infrared heater (11), and an adjustment component (14). The three U-shaped rods (4) are all fixedly installed on the bottom inner wall of the heat insulation box (3) and are arranged at equal intervals. The inner baffles (5) are slidably mounted on the corresponding U-shaped rods (4). The three vertical plates (6) are fixedly installed at the bottom of the corresponding inner baffles (5). The bottom inner wall of the heat insulation box (3) is provided with three through holes (7) arranged at equal intervals. The bottom ends of the three vertical plates (6) pass through the corresponding through holes (7). The three outer baffles (8) are fixedly installed at the bottom ends of the corresponding vertical plates (6). The resistance heater (9), the induction heater (10) and the infrared heater (11) are fixedly installed on one side of the corresponding vertical plate (6). A connecting shaft (15) is provided between the two heat insulation boxes (3).

2. The heating device for a chemical vapor deposition apparatus according to claim 1, characterized in that: Two symmetrically arranged fixing rings (12) are fixedly sleeved on the U-shaped rod (4). A spring (13) is fixedly installed at the bottom of each of the two fixing rings (12). The bottom ends of the two springs (13) are fixedly connected to the top of the inner baffle (5). The two springs (13) are sleeved on the U-shaped rod (4).

3. The heating device for a chemical vapor deposition apparatus according to claim 2, characterized in that: The adjustment assembly (14) includes an adjustment shaft (141), three cams (142), a handle (143), and a locking bolt (144). The adjustment shaft (141) is rotatably mounted inside the heat insulation box (3) and located above the inner baffle (5). The three cams (142) are all fixedly sleeved on the adjustment shaft (141). The three cams (142) are respectively located above the corresponding inner baffle (5), and the included angle between two adjacent cams (142) is set to 120°. Both ends of the shaft (141) extend outside the heat insulation box (3). The rotating handle (143) is fixedly installed on one end of the adjusting shaft (141). The locking bolt (144) is threaded on the rotating handle (143). Three threaded grooves (16) are provided on the outer wall of the heat insulation box (3) near the rotating handle (143). The three threaded grooves (16) are distributed in a ring with equal spacing around the adjusting shaft (141). One end of the locking bolt (144) is threaded in one of the threaded grooves (16).

4. The heating device for a chemical vapor deposition apparatus according to claim 3, characterized in that: The two ends of the linkage shaft (15) are respectively fixedly connected to the ends of the two adjusting shafts (141) that are close to each other.

5. The heating device for a chemical vapor deposition apparatus according to claim 3, characterized in that: Three equally spaced ring-shaped indicator ridges (145) are fixedly installed on the side of the handle (143) away from the heat insulation box (3). The three indicator ridges (145) correspond one-to-one with the orientation of the three cams (142).

6. The heating device for a chemical vapor deposition apparatus according to claim 1, characterized in that: The inner baffle (5) and the outer baffle (8) have the same shape and size, and the cross-sectional size of the through hole (7) is smaller than that of the inner baffle (5).

7. The heating device for a chemical vapor deposition apparatus according to claim 3, characterized in that: The heat insulation box (3) has mounting holes on both sides, and high-temperature bearings are fixedly fitted on both ends of the adjusting shaft (141). The outer rings of the two high-temperature bearings are fixedly connected to the inner walls of the corresponding mounting holes.

8. The heating device for a chemical vapor deposition apparatus according to claim 1, characterized in that: An L-shaped plate (17) is provided above the crossbeam (2), and a drive assembly (18) is provided between the L-shaped plate (17) and the crossbeam (2). The drive assembly (18) includes a horizontal guide rail (181), a sliding plate (182), a rack (183), a gear (184), a strip frame (185), a motor (186), a rotating arm (187), and a drive pin (188). The horizontal guide rail (181) is located behind the vertical shaft (1). The sliding plate (182) is slidably sleeved on the top of the horizontal guide rail (181). The rack (183) is fixedly installed on the front side wall of the sliding plate (182), and the gear (184) is fixedly sleeved on the top of the sliding plate (182). On the vertical shaft (1), the gear (184) meshes with the rack (183), the strip frame (185) is fixedly installed on the right end of the rack (183), the top and bottom of the strip frame (185) are open structures, the motor (186) is fixedly installed on the top inner wall of the L-shaped plate (17), the rotating arm (187) is fixedly installed on the output shaft end of the motor (186), the drive pin (188) is fixedly installed on the bottom of the rotating arm (187), and the axis of the drive pin (188) does not coincide with the axis of the output shaft end of the motor (186), and the bottom end of the drive pin (188) slides through the strip frame (185).

9. The heating device for a chemical vapor deposition apparatus according to claim 8, characterized in that: The inner wall of the strip frame (185) and the outer surface of the drive pin (188) are both smooth surfaces.

10. A chemical vapor deposition apparatus, characterized in that, include: Heating apparatus for a chemical vapor deposition apparatus as claimed in any one of claims 1 to 9.

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