Composition for photoelectric device, polymer, ink, and photoelectric device

Abstract

The invention relates to the technical field of photoelectric devices, in particular to a composition for a photoelectric device, a polymer, ink and the photoelectric device. The composition for the photoelectric device comprises a main body material, a sulfhydryl compound and a P-type dopant, and the main body material comprises one or more of compounds with the structure shown in the formula (I); the sulfhydryl compound comprises one or more of compounds with structures as shown in a formula (II); the P-type dopant comprises one or more of compounds with a structure as shown in a formula (III). The composition for the photoelectric device provided by the invention can be used for preparing a hole functional material, has excellent solvent resistance, and can effectively improve the hole transmission property, thereby being beneficial to improving the efficiency of the photoelectric device.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of optoelectronic devices, in particular to a composition for optoelectronic devices, a polymer, an ink, and an optoelectronic device. BACKGROUND

[0002] Organic electroluminescent diodes (OLEDs) have been widely studied and applied in display devices. As a current device, when a voltage is applied between an anode and a cathode, holes injected from the anode move to a light-emitting layer through a hole functional layer, and electrons injected from the cathode move to the light-emitting layer through an electron functional layer. The holes and the electrons further recombine in the light-emitting layer to generate an organic electroluminescent phenomenon.

[0003] The layered structure of the organic electroluminescent diode plays an important role in improving the light-emitting efficiency of the device and the service life of the device. At present, the material of the hole functional layer is generally selected from pure organic materials. However, the hole mobility of pure organic materials such as aromatic diamine derivatives or aromatic fused ring diamine derivatives is low, which may further cause the problem of reduced service life of the organic electroluminescent diode. In addition, the current hole functional material has poor solvent resistance, and there is a disadvantage of interlayer mutual solubility in the device preparation process, which may further affect the performance of the device. SUMMARY

[0004] Therefore, the present application provides a composition, a polymer, an ink, and an optoelectronic device. The composition provided by the present application can be used as a hole functional material, which has excellent solvent resistance and can effectively improve the transport properties of holes, thereby improving the service life of the optoelectronic device.

[0005] In a first aspect, the present application provides a composition for an optoelectronic device, comprising a host material, a mercapto compound, and a P-type dopant, wherein the host material comprises one or more compounds having the structure shown in formula (I):

[0006] ;

[0007] wherein, each independently selected from or ; X 11 is selected from NR, O, S, C(=O), S(=O), or S(=O)2; X 12 , X 13 , X 14 , X 15 each independently selected from CRRˊor N; and X 12 , X 13 , X 14 and X 15 at least one of X 21 , X 22, X 23 , X 24 , X 25 and X 26 are each independently selected from CRR' or N; and X 21 , X 22 , X 23 , X 24 , X 25 and X 26 at least one is selected from CRR'; R and R' are each independently selected from hydrogen, halogen, alkyl group having 1 to 6 carbon atoms, alkoxy group having 1 to 6 carbon atoms, or haloalkyl group having 1 to 6 carbon atoms;

[0008] Ar1, Ar2, Ar3 and Ar4 are each independently selected from S1-substituted or unsubstituted aryl group having 6 to 20 carbon atoms, S1 are each independently selected from alkenyl group having 2 to 9 carbon atoms or alkynyl group having 2 to 9 carbon atoms; and at least one of Ar1, Ar2, Ar3 and Ar4 is selected from S1-substituted aryl group having 6 to 20 carbon atoms;

[0009] The mercapto compound includes one or more of the compounds having the structure shown in formula (II): ;

[0010] wherein R 21 is selected from ; R 22 , R 23 and R 24 are each independently selected from H, alkyl group having 1 to 6 carbon atoms, alkoxy group having 1 to 6 carbon atoms, haloalkyl group having 1 to 6 carbon atoms, or wherein A1 is each occurrence independently selected from single bond or alkylene group having 1 to 6 carbon atoms; A2 is each occurrence independently selected from alkylene group having 1 to 6 carbon atoms;

[0011] The P-type dopant includes one or more of the compounds having the structure shown in formula (III): ; R 31 , R 32 , R 33 and R 34 are each independently selected from halogen, , or ; m is any integer from 0 to 10, R 41 , R 42 are each independently selected from H, alkyl group having 1 to 6 carbon atoms, or cyano group.

[0012] In a second aspect of the present application, a polymer is provided, which is obtained by polymerization of the host material, the mercapto compound and the P-type dopant in the composition for optoelectronic devices according to any one of the first aspect of the present application.

[0013] In a third aspect of the present application, an ink is provided, which comprises the host material, the mercapto compound, the P-type dopant, the initiator and the solvent according to any one of the embodiments of the first aspect of the present application.

[0014] The composition for optoelectronic devices provided by the present application has at least the following advantages:

[0015] The composition for optoelectronic devices provided by the present application has at least the following advantages: BRIEF DESCRIPTION OF DRAWINGS

[0016] Figure 1 The structure of the optoelectronic device provided by an example of the present application is shown in the following figure.

[0017] In the figure, the anode layer-10, the hole functional layer-20, the hole injection layer 201, the hole transport layer-202, the light emitting layer-30, the electron functional layer-40, the electron transport layer 401, the electron injection layer-402, the cathode layer-50. DETAILED DESCRIPTION

[0018] The composition for optoelectronic devices, the polymer, the ink, the optoelectronic device of the present application are further fully and clearly described below in combination with specific embodiments. The present application can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present application more thorough and comprehensive.

[0019] In the present application, "substitution" means that a hydrogen atom in a substituent is replaced by a substituent.

[0020] In the present application, "alkyl" refers to a saturated hydrocarbon radical derived from an alkane by removal of a single hydrogen atom. The term includes both straight and branched carbon chains. The phrase "alkyl" as a group containing 1 to 6 carbon atoms, refers to a straight or branched chain alkyl group containing 1 to 10 carbon atoms, which can be, independently for each occurrence, a C1 alkyl, C2 alkyl, C3 alkyl, C4 alkyl, C5 alkyl, or C6 alkyl. Suitable examples include, but are not limited to: methyl (Me, -CH3), ethyl (Et, -CH2CH3), 1 -propyl (n-Pr, n-propyl, -CH2CH2CH3), 2-propyl (i-Pr, i-propyl, -CH(CH3)2), 1 -butyl (n-Bu, n-butyl, -CH2CH2CH2CH3), 2-methyl-1 -propyl (i-Bu, i-butyl, -CH2CH(CH3)2), 2-butyl (s-Bu, s-butyl, -CH(CH3)CH2CH3), 2-methyl-2-propyl (t-Bu, t-butyl, -C(CH3)3), 1-pentyl (n-pentyl, -CH2CH2CH2CH2CH3), 2-pentyl (-CH(CH3)CH2CH2CH3), 3-pentyl (-CH(CH2CH3)2), 2-methyl-2-butyl (-C(CH3)2CH2CH3), 3-methyl-2-butyl (-CH(CH3)CH(CH3)2), 3-methyl-1 -butyl (-CH2CH2CH(CH3)2), 2-methyl-1 -butyl (-CH2CH(CH3)CH2CH3), 1-hexyl (-CH2CH2CH2CH2CH2CH3), 2-hexyl (-CH(CH3)CH2CH2CH2CH3), 3-hexyl (-CH(CH2CH3)(CH2CH2CH3)), 2-methyl-2-pentyl (-C(CH3)2CH2CH2CH3), 3-methyl-2-pentyl (-CH(CH3)CH(CH3)CH2CH3), 4-methyl-2-pentyl (-CH(CH3)CH2CH(CH3)2), 3-methyl-3-pentyl (-C(CH3)(CH2CH3)2), 2-methyl-3-pentyl (-CH(CH2CH3)CH(CH3)2), 2,3-dimethyl-2-butyl (-C(CH3)2CH(CH3)2), and 3,3-dimethyl-2-butyl (-CH(CH3)C(CH3)3).

[0021] In the present application, "alkoxy" refers to a group having the formula -O-alkyl, i.e., an alkyl group as defined above attached to the parent structure through an oxygen atom. Phrases containing this term, e.g., "alkoxy having from 1 to 6 carbon atoms" means that the alkyl portion contains from 1 to 6 carbon atoms, and each occurrence can be, independently of the other, a C1 alkoxy, a C4 alkoxy, a C5 alkoxy, a C6 alkoxy. Suitable examples include, but are not limited to: methoxy (-O-CH3or -OMe), ethoxy (-O-CH2CH3or -OEt), and t-butoxy (-O-C(CH3)3or -OtBu).

[0022] In the present application, "haloalkyl" refers to an alkyl group substituted with one or more halogen (chlorine, fluorine, bromine, or iodine) atoms. Polyhaloalkyl groups have the same or mixed types of halogen atoms. "Perhaloalkyl" refers to an alkyl group in which each hydrogen atom is replaced by a halogen atom. A haloalkyl group in which a particular carbon atom is "perhalo" refers to the replacement of all hydrogen atoms attached to that carbon with halogen atoms. Representative mono-, di-, and trihaloalkyl groups include: chloromethyl, chloroethyl, bromomethyl, bromoethyl, iodomethyl, iodoethyl, chloropropyl, bromopropyl, iodopropyl, 1,1-dichloromethyl, 1,1-dibromomethyl, 1,1-dichloropropyl, 1,2-dibromopropyl, 2,3-dibromopropyl, 1-chloro-2-bromoethyl, 2-chloro-3-bromopropyl, trifluoromethyl, trichloromethyl, and the like.

[0023] In the present application, "aryl" refers to an aromatic hydrocarbon group derived by removing a hydrogen atom from a basic aromatic ring compound, which can be a monocyclic aryl group, or a fused ring aryl group, or a polycyclic aryl group, and for polycyclic rings, at least one is an aromatic ring system. Phrases containing this term, e.g., "aryl having from 6 to 20 carbon atoms" means that the aryl group contains from 6 to 20 carbon atoms, and each occurrence can be, independently of the other, a C6 aryl group, a C 10 aryl group, a C 14 aryl group, a C 18 aryl group, a C 20 aryl group. Suitable examples include, but are not limited to: benzene, biphenyl, naphthalene, anthracene, phenanthrene, chrysene, triphenylene, and derivatives thereof.

[0024] "Alkenyl" refers to a group containing at least one unsaturated site, i.e., a carbon-carbon sp 2A hydrocarbon containing a primary, secondary, tertiary, or cyclic carbon atom of a double bond. Phrases containing this term, for example, "alkenyl having 2 to 9 carbon atoms" means an alkenyl group containing 2 to 9 carbon atoms, each occurrence of which can independently of the other occurrences be a C2 alkenyl group, a C3 alkenyl group, a C4 alkenyl group, a C5 alkenyl group, a C6 alkenyl group, a C7 alkenyl group, a C8 alkenyl group, a C9 alkenyl group. Suitable examples include, but are not limited to: ethenyl (-CH=CH2), allyl (-CH2CH=CH2), cyclopentenyl (-C5H7), and 5-hexenyl (-CH2CH2CH2CH2CH=CH2).

[0025] An "alkynyl" group refers to a hydrocarbon containing a primary, secondary, tertiary, or cyclic carbon atom of a triple bond. Phrases containing this term, for example, "alkynyl having 2 to 9 carbon atoms" means an alkynyl group containing 2 to 9 carbon atoms, each occurrence of which can independently of the other occurrences be a C2 alkynyl group, a C3 alkynyl group, a C4 alkynyl group, a C5 alkynyl group, a C6 alkynyl group, a C7 alkynyl group, a C8 alkynyl group, a C9 alkynyl group. Suitable examples include, but are not limited to: ethynyl (-C≡CH) and propargyl (-CH2C≡CH).

[0026] "Halogen" or "halo" means F, Cl, Br, or I.

[0027] In the present application, "*" represents a connection site or a fused site. In the present application, when a connection site is not specified in a group, it means that an optional connection site in the group is taken as the connection site; in the present application, when a fused site is not specified in a group, it means that an optional fused site in the group is taken as the fused site, preferably two or more sites in the ortho position of the group are taken as the fused site.

[0028] In the present application, when a connection site is not specified in a group, it means that an optional connection site in the group is taken as the connection site.

[0029] In the present application, a single bond to which a substituent is connected runs through the corresponding ring, indicating that the substituent can be connected to an optional position of the ring, for example R in the above formula is connected to any substitutable site of the phenyl ring. R in the above formula is connected to any substitutable site of the phenyl ring.

[0030] An OLED device mainly includes an anode layer, a hole functional layer, a light-emitting layer, an electron functional layer, and a cathode layer in structure. Among them, the preparation method of the functional layer mainly includes vacuum evaporation method and inkjet printing method. The vacuum evaporation method is to heat the organic material to a gaseous state in a vacuum environment, and then condense it on the substrate to form a thin film. This method can accurately control the deposition thickness and uniformity of the material, but this method requires special vacuum equipment, and the production cost is high; and there is a disadvantage that the material is scattered during the deposition process, resulting in low material utilization. The inkjet printing method does not require a vacuum environment, and is lower than the vacuum evaporation method in terms of equipment and consumable cost control.

[0031] When an OLED device is prepared by an inkjet printing method, the hole functional material or the electron functional material is required to have solvent resistance to prevent interlayer miscibility in the inkjet printing process. In order to overcome the interlayer mixing in the spin coating process, currently, heat crosslinking or photochemical crosslinking is performed before applying the second layer to improve the stability of the material and reduce the interlayer mixing. However, the crosslinking temperature is high and the polymer synthesis efficiency is low, which results in limited reduction of interlayer mixing, so that the OLED device prepared has low reproducibility and low efficiency. Therefore, it is necessary to provide a functional material capable of being prepared by an inkjet printing method, which can form a network structure resistant to solvents, thereby effectively avoiding mixing with other functional layers of optoelectronic devices and improving the efficiency of the optoelectronic devices.

[0032] Based on this, in a first aspect of the present application, a composition for an optoelectronic device is provided, comprising a host material, a mercapto compound and a P-type dopant, the host material comprising one or more of the compounds having the structure shown in formula (I):

[0033] ;

[0034] wherein, each independently selected from or ; X 11 is selected from NR, O, S, C(=O), S(=O) or S(=O)2; X 12 , X 13 , X 14 , X 15 each independently selected from CRR' or N; and X 12 , X 13 , X 14 and X 15 at least one of X 21 , X 22 , X 23 , X 24 , X 25 and X 26 each independently selected from CRR' or N; and X 21 , X 22 , X 23 , X 24 , X 25 and X 26 at least one of X R and R' are each independently selected from hydrogen, halogen, alkyl group having 1 to 6 carbon atoms, alkoxy group having 1 to 6 carbon atoms or halogenated alkyl group having 1 to 6 carbon atoms.

[0035] Suitable examples of the "alkyl group having 1 to 6 carbon atoms" in the present application include, but are not limited to, -CH3, -CH2CH3, -CH2CH2CH3, -CH(CH3)2, -CH2CH2CH2CH3, -CH2CH(CH3)2, -CH(CH3)CH2CH3, -C(CH3)3, -CH2CH2CH2CH2CH3, -CH(CH3)CH2CH2CH3, -CH(CH2CH3)2, -C(CH3)2CH2CH3, -CH(CH3)CH(CH3)2, -CH2CH2CH(CH3)2), -CH2CH(CH3)CH2CH3, -CH2CH2CH2CH2CH2CH3, -CH(CH3)CH2CH2CH2CH3, -CH(CH2CH3)(CH2CH2CH3), -C(CH3)2CH2CH2CH3, -CH(CH3)CH(CH3)CH2CH3, -CH(CH3)CH2CH(CH3)2, -C(CH3)(CH2CH3)2, or -CH(CH2CH3)CH(CH3)2.

[0036] Suitable examples of the "alkoxy group having 1 to 6 carbon atoms" in the present application include, but are not limited to, -O-CH3, -O-CH2CH3, or -O-C(CH3)3, or -OtBu.

[0037] Suitable examples of the "halogenated alkyl group having 1 to 6 carbon atoms" in the present application include, but are not limited to, chloromethyl, chloroethyl, bromomethyl, bromoethyl, iodomethyl, iodoethyl, chloropropyl, bromopropyl, iodopropyl, 1,1-dichloromethyl, 1,1-dibromomethyl, 1,1-dichloropropyl, 1,2-dibromopropyl, 2,3-dibromopropyl, 1-chloro-2-bromoethyl, 2-chloro-3-bromopropyl, trifluoromethyl, or trichloromethyl.

[0038] Optionally, each independently is selected from any one of the following groups: , , , , , , , , , , , , , , , , , , or R1is each independently at each occurrence selected from hydrogen, halogen, alkyl of 1 to 6 carbon atoms, alkoxy of 1 to 6 carbon atoms, or haloalkyl of 1 to 6 carbon atoms.

[0039] Further, each independently selected from any one of the following groups: or .

[0040] L1and L2are each independently selected from arylene of 6 to 20 carbon atoms.

[0041] Ar1, Ar2, Ar3, and Ar4are each independently selected from S1-substituted or unsubstituted aryl of 6 to 20 carbon atoms. S1is each independently selected from alkenyl of 2 to 9 carbon atoms or alkynyl of 2 to 9 carbon atoms. And at least one of Ar1, Ar2, Ar3, and Ar4is selected from S1-substituted aryl of 6 to 20 carbon atoms.

[0042] Optionally, L1and L2are each independently selected from , , , or .

[0043] Further, L1and L2are each independently selected from or .

[0044] Ar1, Ar2, Ar3, and Ar4are each independently selected from S1-substituted or unsubstituted aryl of 6 to 20 carbon atoms. S1is each independently selected from alkenyl of 2 to 9 carbon atoms or alkynyl of 2 to 9 carbon atoms. And at least one of Ar1, Ar2, Ar3, and Ar4is selected from S1-substituted aryl of 6 to 20 carbon atoms.

[0045] Suitable examples of “aryl of 6 to 20 carbon atoms” include, but are not limited to, benzene, biphenyl, naphthalene, anthracene, phenanthrene, chrysene, triphenylene, and derivatives thereof.

[0046] Suitable examples of “alkenyl of 2 to 9 carbon atoms” include, but are not limited to, -CH=CH2, -CH2CH=CH2, -C5H7, or -CH2CH2CH2CH2CH=CH2.

[0047] Suitable examples of “alkynyl of 2 to 9 carbon atoms” include, but are not limited to, -C≡CH and propargyl -CH2C≡CH.

[0048] Optionally, Ar1, Ar2, Ar3, and Ar4are each independently selected from , , , , , 、 、 、 、 or . Each S1is independently selected from an alkenyl group having from 2 to 6 carbon atoms or an alkynyl group having from 2 to 6 carbon atoms; and at least one of Ar1, Ar2, Ar3, and Ar4is substituted with S1.

[0049] In one example, the host material comprises 、 、 、 、 、 、 、 、 、 、 、

[0050] 、 、

[0051] 、 、 and . m is any integer from 0 to 4. m is 0, 1, 2, 3, or 4.

[0052] Further, the host material comprises and .

[0053] In one example, the thiol compound comprises one or more of a compound having the structure of Formula (II): .

[0054] wherein R 21 is selected from . R 22 , R 23 , and R 24 are each independently selected from H, an alkyl group having from 1 to 6 carbon atoms, an alkoxy group having from 1 to 6 carbon atoms, a haloalkyl group having from 1 to 6 carbon atoms, or wherein each occurrence of A1is independently selected from a single bond or an alkylene group having from 1 to 6 carbon atoms. Each occurrence of A2is independently selected from an alkylene group having from 1 to 6 carbon atoms.

[0055] Suitable examples of "alkyl having 1 to 6 carbon atoms" in the present application include, but are not limited to, -CH3, -CH2CH3, -CH2CH2CH3, -CH(CH3)2, -CH2CH2CH2CH3, -CH2CH(CH3)2, -CH(CH3)CH2CH3, -C(CH3)3, -CH2CH2CH2CH2CH3, -CH(CH3)CH2CH2CH3, -CH(CH2CH3)2, -C(CH3)2CH2CH3, -CH(CH3)CH(CH3)2, -CH2CH2CH(CH3)2), -CH2CH(CH3)CH2CH3, -CH2CH2CH2CH2CH2CH3, -CH(CH3)CH2CH2CH2CH3, -CH(CH2CH3)(CH2CH2CH3), -C(CH3)2CH2CH2CH3, -CH(CH3)CH(CH3)CH2CH3, -CH(CH3)CH2CH(CH3)2, -C(CH3)(CH2CH3)2, or -CH(CH2CH3)CH(CH3)2.

[0056] Suitable examples of "alkoxy having 1 to 6 carbon atoms" in the present application include, but are not limited to, -O-CH3, -O-CH2CH3, or -O-C(CH3)3, or -OtBu.

[0057] Suitable examples of "haloalkyl having 1 to 6 carbon atoms" in the present application include, but are not limited to, chloromethyl, chloroethyl, bromomethyl, bromoethyl, iodomethyl, iodoethyl, chloropropyl, bromopropyl, iodopropyl, 1,1-dichloromethyl, 1,1-dibromomethyl, 1,1-dichloropropyl, 1,2-dibromopropyl, 2,3-dibromopropyl, 1-chloro-2-bromoethyl, 2-chloro-3-bromopropyl, trifluoromethyl, or trichloromethyl.

[0058] Suitable examples of "alkylene having 1 to 6 carbon atoms" in the present application include, but are not limited to, -CH2-, -CH2CH2-, -CH2CH2CH2-, -C(CH3)2-, -CH2CH2CH2CH2-, -CH(CH3)CH2CH2-, -CH2CH2CH2CH2CH2-, -CH(CH3)CH2CH2CH2-, -C(CH3)2CH2CH2-, -CH2CH2C(CH3)2-, -CH2CH(CH3)CH2CH2-, -CH2CH2CH2CH2CH2CH2-, -CH(CH3)CH2CH2CH2CH2-, -CH(CH2CH3)(CH2CH2CH2-, -C(CH3)2CH2CH2CH2-, -CH(CH3)CH(CH3)CH2CH2-, or -CH(CH3)CH2C(CH3)2-.

[0059] It can be appreciated that A1is selected from a single bond, .

[0060] In one example, the thiol compound includes one or more of , wherein each of n1, n2, n3, n4, n5, and n6 is independently selected from any integer between 0 and 4. Each of n1, n2, n3, n4, n5, and n6 is independently selected from 0, 1, 2, 3, or 4.

[0061] In one example, the thiol compound includes one or more of , and .

[0062] wherein the P-type dopant includes one or more of a compound having a structure according to Formula (III): . R 31 , R 32 , R 33 , and R 24 are each independently selected from halogen, , or ; m is any integer between 0 and 10, and R 41 , R 42 are each independently selected from H, an alkyl group having a carbon atom number between 1 and 6, or a cyano group.

[0063] Suitable examples of “halogen” include, but are not limited to, F, Cl, Br, or I.

[0064] In one example, R 31 , R 32 , R 33 , and R 24 are each independently selected from halogen or m is selected from any integer between 0 and 6.

[0065] In one example, R 31 and R 34 are the same.

[0066] In one example, R 32 and R 33 are the same.

[0067] In one example, the P-type dopant includes one or more of , and .

[0068] ​The photoelectric device composition provided by the application comprises a host material, a mercapto compound and a P-type dopant. The unsaturated hydrocarbon group in the host material introduces a crosslinking site, so that the host material can form a network structure with the mercapto compound and the P-type dopant and the like at low temperature. The crosslinked network structure has excellent solvent resistance, and other layered structures can be prepared on the surface of the crosslinked network structure by using an inkjet printing method, so as to reduce the mixing between the hole functional material and other functional layers of the photoelectric device, thereby improving the efficiency of the photoelectric device.

[0069] In addition, the multi-aromatic group-substituted amine group and the heterocyclic group in the host material synergize with each other, so that the HOMO level thereof matches the anode work function, and thus the holes can be effectively transmitted. Meanwhile, the heterocyclic group has certain electron acceptor properties, which can better stabilize the holes, thereby increasing the affinity for the holes; and the heteroatoms in the heterocyclic group can form a conjugated system with adjacent carbon atoms through p orbitals, so as to enhance the electron flowability in the molecule, so that the material is more likely to transmit carriers. Further assisted by the mercapto compound, the mercapto group can act as an electron acceptor, so as to extract electrons from the host material, thereby leaving more holes; and the cyano group contained in the P-type dopant has strong electron-withdrawing property, which is also conducive to the injection of holes.

[0070] In one example, the mass ratio of the host material to the mercapto compound is (5-9):(0.2-5). For example, the mass ratio of the host material to the mercapto compound includes but is not limited to 5:5, 6:1.9, 6:2, 7:1.4, 7:2, 8:1, 8:1.5, 8:2, 9:0.2, 9:0.3, 9:0.5, 9:0.7, 9:0.9, 9:1 or 9:1.2.

[0071] In one example, the mass ratio of the host material to the P-type dopant is (5-9):(0.2-5). For example, the mass ratio of the host material to the P-type dopant includes but is not limited to 5:5, 6:1.9, 6:2, 7:1.4, 7:2, 8:1, 8:1.5, 8:2, 9:0.2, 9:0.3, 9:0.5, 9:0.7, 9:0.9, 9:1 or 9:1.2.

[0072] Limiting the mass ratio of the host material, the mercapto compound and the P-type dopant can regulate the electronic structure and energy level of the polymer formed after crosslinking of the three components, thereby enhancing the hole transport capacity of the polymer. Meanwhile, the polymer formed after crosslinking of the three components has excellent solvent resistance, so as to effectively solve the problem of interlayer mutual solubility, thereby improving the efficiency and service life of the device prepared by the inkjet printing process.

[0073] It is understood that the application does not limit the source of the host material, the mercapto compound and the P-type dopant as long as the structure satisfies the above chemical formula. The host material, the mercapto compound and the P-type dopant mentioned in the application can be prepared or obtained by commercial purchase or methods known in the art.

[0074] In a second aspect of the application, a polymer is provided, which is obtained by polymerization of the host material, the mercapto compound and the P-type dopant in the composition for optoelectronic devices according to any one of the examples of the first aspect of the application.

[0075] In one example, the process parameters for polymerization include that the polymerization temperature is 100-250°C. The composition provided by the application has a relatively low crosslinking temperature and a relatively high polymer synthesis efficiency, thereby effectively reducing the interlayer mixing and improving the efficiency of the optoelectronic device. For example, the polymerization temperature includes but is not limited to 100°C, 110°C, 120°C, 130°C, 140°C, 160°C, 180°C, 200°C, 220°C, 240°C or 250°C.

[0076] In one example, the process parameters for polymerization further include that the polymerization time is 0.1-24h. The polymerization time includes but is not limited to 0.1h, 1h, 5h, 7h, 10h, 15h, 20h or 24h.

[0077] In one example, the process parameters for polymerization further include that the polymerization is performed under light with a wavelength of 300-400nm. For example, the wavelength for the polymerization reaction includes but is not limited to 300nm, 320nm, 340nm, 350nm, 360nm, 380nm or 400nm.

[0078] In one example, the step of polymerizing the host material, the mercapto compound and the P-type dopant to obtain a polymer further includes an initiator.

[0079] For example, the initiator includes one or more of 2-hydroxy-2-methylphenylpropan-1-one, 1-hydroxycyclohexyl phenyl ketone, 2-methyl-2-(4-morpholinyl)-1-(4-(methylthio)phenyl)-1-propanone and 2,4,6-trimethylbenzoyl-diphenylphosphine oxide.

[0080] In a third aspect of the application, an ink is provided, which includes the host material, the mercapto compound, the P-type dopant, the initiator and a solvent according to the first aspect of the application.

[0081] In one example, the mass ratio of the host material to the initiator is (5-9):(0.2-5).

[0082] In one example, the solvent includes one or more of toluene, o-xylene, m-xylene, p-xylene, o-diethylbenzene, m-diethylbenzene, p-diethylbenzene, cyclohexylbenzene, tetralin, cyclohexanone, cyclopentanone, anisole, phenetol, p-methyl anisole, and p-methyl phenetol.

[0083] In one example, the initiator includes one or more of 2-hydroxy-2-methylpropyl phenyl ketone, 1-hydroxycyclohexyl phenyl ketone, 2-methyl-2-(4-morpholinyl)-1-(4-(methylthio)phenyl)-1-propanone, and 2,4,6-trimethylbenzoyl-diphenylphosphine oxide.

[0084] The application also provides a method for preparing a hole injection layer, including the following steps: coating the ink of the third aspect of the application on the surface of a substrate, and performing a polymerization reaction under light with a wavelength of 300 nm to 400 nm and at a temperature of 100°C to 250°C for 0.1 h to 24 h to prepare the hole injection layer.

[0085] It can be understood that the polymerization process parameters herein are the same as the preparation process parameters of the polymer of the second aspect of the application, and thus will not be described again here.

[0086] In the fourth aspect of the application, referring to Figure 1 , a photoelectric device is provided, which includes an anode layer 10, a hole functional layer 20, a light-emitting layer 30, an electron functional layer 40, and a cathode layer 50 arranged in layers. The material of the hole functional layer is obtained by polymerization of the composition of the first aspect of the application, or includes the polymer of the second aspect of the application, or is prepared using the ink of the third aspect of the application.

[0087] In one example, the hole functional layer 20 includes a hole injection layer 201 and a hole transport layer 202, and the hole injection layer 201 is arranged closer to the anode layer 10 than the hole transport layer 202. The material of the hole injection layer 201 is obtained by polymerization of the composition of any one of the first aspect of the application, or is prepared using the ink of the third aspect of the application.

[0088] In one example, the material of the anode layer 10 and the material of the cathode layer 20 are each independently selected from one or more of Al, Au, Ag, Ca, Ba, Mg, MgAg alloy, Cu, Fe, Co, Ni, Mn, Pd, Pt, and ITO.

[0089] In one example, the material of the hole transport layer 202 includes one or more of 2,9-dioctyldimethylsilyl substituted polyacenes, N,N'-diphenyl-N,N'-di(1-naphthyl)-1,1'-biphenyl-4,4'-diamine, 4,4',4''-tris(9H-carbazol-9-yl)-triphenylamine, 4,4'-bis(9H-carbazol-9-yl)biphenyl, N,N'-di(3-methylphenyl)-N,N'-diphenyl-4,4'-biphenyldiamine, and 1,1-bis[4-[N,N'-di(p-tolyl)amino]phenyl]cyclohexane, polyvinylcarbazole, poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine), poly(9,9-dioctylfluorene-co-bis-N,N-phenyl-1,4-phenylenediamine), N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine, N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine, NiO, WO3, MoO3, and CuO;

[0090] In one example, the material of the light-emitting layer 30 includes one or more of 8-hydroxyquinoline aluminum, polystyrene, polyethylene terephthalate, dimethylene blue, triphenylamine derivatives, isoquinoline derivatives, and quantum dot materials; optionally, the quantum dot materials include one or more of II-VI compounds, III-V compounds, IV-VI compounds, and I-III-VI compounds, wherein the II-VI compounds include one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe; the III-V compounds include one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb; the IV-VI compounds include one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe; and the I-III-VI compounds include one or more of CuInS2, CuInSe2, and AgInS2.

[0091] In one example, the electronic functional layer 40 includes an electron injection layer 402 and / or an electron transport layer 401. The electron injection layer 402 is made of one or more of lithium, sodium, potassium, rubidium, cesium, magnesium, calcium, gold, silver, copper, iron, nickel, platinum, palladium, ruthenium, ytterbium, molybdenum trioxide, vanadium pentoxide, tungsten trioxide, cesium fluoride, cesium carbonate, lithium fluoride, lithium carbonate, and lithium 8-hydroxyphosphate. The electron transport layer 401 is made of one or more of 4,7-diphenyl-1,10-phenanthroline, 4,7-diphenyl-1,10-o-phenanthroline, 3-(biphenyl-4-yl)-5-(4-tert-butylphenyl)-4-phenyl-4H-1,2,4-triazole, 1,3,5-tris(1-phenyl-1H-benzimidazol-2-yl)benzene, lithium 8-hydroxyphosphate, and 1,3,5-tricarbazolylstyrene.

[0092] In one example, the electronic functional layer 40 includes an electron injection layer 402 and an electron transport layer 401, with the electron injection layer 402 positioned closer to the cathode layer 50 than the electron transport layer 401.

[0093] The following detailed embodiments illustrate this application in more detail. It should also be understood that the following embodiments are for further explanation only and should not be construed as limiting the scope of protection of this application. Any non-essential improvements and adjustments made by those skilled in the art based on the above description of this application fall within the scope of protection of this application. The specific process parameters, etc., in the following embodiments are merely examples within a suitable range; that is, those skilled in the art can make appropriate selections within the range based on the description herein, and are not necessarily limited to the specific values ​​in the embodiments below.

[0094] [raw material]

[0095] Thiol compound: Pentaerythritol tetrakis(3-mercaptopropionic acid) ester Purchased from: Guangzhou Yuanda New Materials.

[0096] P-type dopant: P1, Purchased from: Dongguan Fu'an Technology Co., Ltd.

[0097] Preparation Example 1 - Preparation of the Main Material

[0098] Preparation Example 1-1

[0099] (1) Synthesis of compound 1

[0100]

[0101] Will (45.5 mmol) and (50 mL) was added to a two-necked round bottom flask. The mixture was stirred under Ar atmosphere, cooled to 0°C, and then hydrazine hydrate (92 mmol) was added dropwise. The reaction was stirred at room temperature overnight, and then precipitated by pouring into distilled water. The precipitate was collected, washed with ethyl acetate and petroleum ether at 50°C, and then dried under vacuum to obtain compound 1 at a yield of 85%.

[0102] (2) Synthesis of compound 2

[0103]

[0104] Compound 1 (5 mmol) and POCI3(50 mL) were added to a two-necked round bottom flask and reacted under Ar atmosphere. The mixture was reacted at 130°C for 8 hours. After cooling to room temperature, the mixture was added to ice water. Sodium hydroxide pellets were added at the same time until the pH of the solution was adjusted to neutral. The water layer was extracted with dichloromethane, and the organic phases were combined, washed with saturated sodium chloride solution, and dried with magnesium sulfate, and the solvent was evaporated under reduced pressure, and then dried in vacuum. Compound 2 was obtained at a yield of 93%.

[0105] (3) Synthesis of compound 3

[0106]

[0107] To a 250 mL flask were added aniline (18 mmol), p-bromostyrene (16 mmol), Pd2(dba)3(0.50 mmol), sodium tert-butoxide (48 mmol), and tris(tert-butyl)phosphine (1 mmol, toluene solution), and 120 mL of anhydrous toluene. The reaction mixture was reacted at 80°C for 8 h under Ar atmosphere. After the reaction was completed, the mixture was washed with water and extracted with ethyl acetate several times. After the combined organic solutions were evaporated under reduced pressure to remove the solvent, they were separated and purified by column chromatography on basic alumina (petroleum ether: ethyl acetate = 70:1) to obtain compound 3 at a yield of 60%.

[0108] (4) Synthesis of compound 4

[0109]

[0110] Compound 2 (2.5 mmol), compound 3 (5.5 mmol), palladium acetate (0.5 mmol), sodium tert-butoxide (10 mmol) and tri (tert-butyl) phosphine (1.5 mmol, toluene solution) were dissolved in anhydrous toluene (40 mL), and the mixture was added to a double-necked flask. The mixture was reacted at 90°C for 24 hours under Ar atmosphere. After cooling to room temperature, the reaction mixture was washed with water, then extracted with dichloromethane, and dried with anhydrous magnesium sulfate. The solvent was removed by evaporation under reduced pressure, and the residue was purified by basic alumina column chromatography, eluted with petroleum ether / ethyl acetate (20:1) to obtain the target compound 4 with a yield of 43% as a light yellow solid.

[0111] The characterization results of compound 4 are as follows: 1 H NMR (400 MHz, CDCl3) δ 7.72-7.63 (m, 2H), 7.51(t,2H), 7.28-7.10 (m, 12H), 7.05-6.93 (m, 10H), 6.57 (dd, 2H), 5.61 (d, 2H),5.13 (d, 2H)。

[0112] Example 1

[0113] The device structure is: IZO / HIL (35 nm) / HTL (40 nm) / EML (45 nm) / ETL (25 nm) / EIL (1 nm) / Ag (100 nm).

[0114] The HIL is a hole injection layer, which is cross-linked and polymerized from the host material compound 4, the mercapto compound pentaerythritol tetra(3-mercaptopropionate) and the P-type dopant P1 in a mass ratio of 90:5:3, the HTL layer material is a Poly-TFB thin film (CAS: 223569-31-1, purchased from Lumtec. Corp; 5 mg / mL toluene solution), the EML is a light-emitting layer, and the materials are Alq3 and BD01, wherein the mass ratio of Alq3 and BD01 is 7:3; the ETL is an electron transport layer, and the materials are LiQ (8-hydroxy lithium phosphate) and ET1, wherein the mass ratio of LiQ and ET1 is 8:2, the EIL is an electron injection layer, and the material is Yb, and Ag is a cathode material.

[0115] The preparation steps of the OLED device are as follows:

[0116] 1. Pre-treatment of indium zinc oxide (IZO) coated glass (specification: thickness of 75 nm, sheet resistance of 10 Ω m -2 , surface size of 30 mm x 30 mm)

[0117] The ITO glass substrate is cleaned by using a cleaning machine in sequence, each cleaning step for 120 s, and the stains and dust on the surface of the ITO glass substrate are thoroughly cleaned. The ITO glass substrate is placed in a hot table at 230°C for baking for 30 minutes. Then the ITO glass substrate is placed in an electric heating drying oven for 24 hours and then dried for standby. Then the dried ITO glass substrate is subjected to UV exposure and O2 plasma treatment for 15 minutes to reduce the surface work function.

[0118] 2. The ITO glass substrate after pretreatment is used as an anode of a device. Then, in a nitrogen glove box, the host material compound 4, the mercapto compound tetra(3-mercaptopropionic acid) pentaerythritol ester, the P-type dopant P1, and the initiator 2-hydroxy-2-methylphenylpropane-1-ketone are filled into an ink cartridge of an inkjet printer at a mass ratio of 90:5:3:2, 9 picoliters of ink of the HIL layer is injected into each pixel light-emitting point, and VD is performed for 3 minutes (the vacuum degree is 1 x 10 -4 mPa) to form a 35 nm-thick HIL layer, and irradiation is initiated at 360 nm and heating is performed at 140°C for 30 minutes.

[0119] Then, the hole transport layer material (concentration 30 mg / ml) dissolved in a mixed solution of xylene and cyclohexylbenzene is filtered and filled into an ink cartridge of an inkjet printer, 12 picoliters of ink of the HTL layer is injected into each pixel light-emitting point, and VD is performed for 7 minutes (the vacuum degree is 1 x 10 -4 mPa) to form a 40 nm-thick HTL layer, and annealing is performed at 230°C for 30 minutes. Then, the light-emitting layer material (concentration 20 mg / ml) dissolved in a mixed solution of xylene and cyclohexylbenzene is prepared into ink and filled into an ink cartridge of an inkjet printer, and 10 picoliters of ink of the EML layer is injected into each pixel point of the above-mentioned HTL layer, and VD is performed for 5 minutes (the vacuum degree is 1 x 10 -4 mPa) to form an EML layer, and annealing is performed at 140°C for 20 minutes, and the thickness is 35 nm. Then, the substrate is transferred into a vacuum evaporation chamber (the vacuum degree is 5 x 10 -7 Pa), and vacuum evaporation is performed. 25 nm of ETL material is evaporated onto the EML layer, then 1 nm of Yb is evaporated onto the surface of the ETL layer to form an EIL layer, and finally, 100 nm of Ag is evaporated onto the EIL to form an anode. Finally, UV curing is performed for packaging, and heating and baking are performed for 20 minutes.

[0120] Example 2

[0121] Example 2 was prepared in a similar manner to Example 1, except that the HIL layer was prepared by cross-linking and polymerization of the host material Compound 4, the mercapto compound tetra(3-mercaptopropionic acid) pentaerythritol ester, and the P-type dopant PI in a mass ratio of 80:10:8. The specific preparation steps of the HIL layer were as follows: the pretreated ITO glass substrate was used as the anode of the device, and then the host material Compound 4, the mercapto compound tetra(3-mercaptopropionic acid) pentaerythritol ester, the P-type dopant PI, and the initiator 2-hydroxy-2-methylphenylpropane-1-one were filled into an ink cartridge of an inkjet printer in a mass ratio of 80:10:8:2, 9 picoliters of HIL layer ink was filled into each pixel light-emitting point, and VD 3 min (the vacuum degree was 1 x 10 -4 mPa) was performed to form a 35-nm-thick HIL layer, and photopolymerization was initiated under 360-nm light irradiation, and heating was performed at 140 °C for 30 min.

[0122] Example 3

[0123] Example 3 was prepared in a similar manner to Example 1, except that the HIL layer was prepared by cross-linking and polymerization of the host material Compound 4, the mercapto compound tetra(3-mercaptopropionic acid) pentaerythritol ester, and the P-type dopant PI in a mass ratio of 70:14:14. The specific preparation steps of the HIL layer were as follows:

[0124] The pretreated ITO glass substrate was used as the anode of the device, and then the host material Compound 4, the mercapto compound tetra(3-mercaptopropionic acid) pentaerythritol ester, the P-type dopant PI, and the initiator 2-hydroxy-2-methylphenylpropane-1-one were filled into an ink cartridge of an inkjet printer in a mass ratio of 70:14:14:2, 9 picoliters of HIL layer ink was filled into each pixel light-emitting point, and VD 3 min (the vacuum degree was 1 x 10 -4 mPa) was performed to form a 35-nm-thick HIL layer, and photopolymerization was initiated under 360-nm light irradiation, and heating was performed at 140 °C for 30 min.

[0125] Example 4

[0126] Example 4 was prepared in a similar manner to Example 1, except that the HIL layer was prepared by cross-linking and polymerization of the host material Compound 4, the mercapto compound tetra(3-mercaptopropionic acid) pentaerythritol ester, and the P-type dopant PI in a mass ratio of 60:19:19. The specific preparation steps of the HIL layer were as follows:

[0127] The pretreated ITO glass substrate was used as the anode of the device, and then the host material compound 4, the mercapto compound tetra(3-mercaptopropionic acid) pentaerythritol ester, the P-type dopant P1, and the initiator 2-hydroxy-2-methylphenylpropane-1-ketone were filled into an ink cartridge of an inkjet printer in a mass ratio of 60:19:19:2, 9 picoliters of HIL layer ink was filled into each pixel light-emitting point, and VD 3 min (vacuum degree 1 x 10 -4 mPa) was performed to form a 35-nm-thick HIL layer, and 360-nm light irradiation was performed to initiate, and heating was performed at 140 °C for 30 min.

[0128] Comparative Example 1

[0129] The preparation method of Comparative Example 1 was similar to that of Example 1, and the main difference was that the HIL layer in Comparative Example 1 contained a host material PEDOT / PSS (commercially available from Merck, Germany, model number: 4083). The specific preparation steps of the HIL layer were as follows:

[0130] The pretreated ITO glass substrate was used as the anode of the device, and then the host material PEDOT / PSS was filled into an ink cartridge of an inkjet printer in a mass ratio of 60:19:19:2, 9 picoliters of HIL layer ink was filled into each pixel light-emitting point, and VD 3 min (vacuum degree 1 x 10 -4 mPa) was performed to form a 35-nm-thick HIL layer, and 360-nm light irradiation was performed to initiate, and heating was performed at 140 °C for 30 min.

[0131] Comparative Example 2

[0132] The preparation method of Comparative Example 2 was similar to that of Example 1, and the main difference was that the HIL layer in Comparative Example 2 was prepared by cross-linking and polymerization of the host material compound 4, the mercapto compound tetra(3-mercaptopropionic acid) pentaerythritol ester, and the P-type dopant P1 in a mass ratio of 90:8:0. The specific preparation steps of the HIL layer were as follows:

[0133] The pretreated ITO glass substrate was used as the anode of the device, and then the host material compound 4, the mercapto compound tetra(3-mercaptopropionic acid) pentaerythritol ester, the P-type dopant P1, and the initiator 2-hydroxy-2-methylphenylpropane-1-ketone were filled into an ink cartridge of an inkjet printer in a mass ratio of 60:19:19:2, 9 picoliters of HIL layer ink was filled into each pixel light-emitting point, and VD 3 min (vacuum degree 1 x 10 -4 mPa) was performed to form a 35-nm-thick HIL layer, and 360-nm light irradiation was performed to initiate, and heating was performed at 140 °C for 30 min.

[0134] Comparative Example 3

[0135] Comparative Example 3 was prepared in a similar manner to Example 1, with the main difference being that in the preparation of the HIL layer of Comparative Example 2, the hole injection layer was crosslinked and polymerized from the host compound Compound 4, the mercapto compound pentaerythritol tetra(3-mercaptopropionate), and the P-type dopant P1 in a mass ratio of 90:0:8. The specific preparation steps of the HIL layer were as follows:

[0136] The pretreated ITO glass substrate was used as the anode of the device, and then the host compound Compound 4, the mercapto compound pentaerythritol tetra(3-mercaptopropionate), the P-type dopant P1, and the initiator 2-hydroxy-2-methylphenylpropane-1-ketone were filled into an ink cartridge of an inkjet printer in a mass ratio of 90:0:8:2, 9 picoliters of HIL layer ink was filled into each pixel light-emitting point, and VD 3 min (vacuum degree of 1 x 10 -4 mPa) was performed to form a 35 nm thick HIL layer, and the light was initiated at 360 nm and heated at 140°C for 30 minutes.

[0137] The current-voltage (J-V) characteristics of each OLED device were characterized by a characterization device, and the lifetime (LT90@1000nits) and the relative value of external quantum efficiency (EQE) were recorded, and the results are shown in Table 1 below. Among them, the lifetime LT90@1000nits refers to the time for the luminance of the device to decrease from the initial luminance of 1000 nits to 95% of the initial luminance under a constant current. Here, the relative value of EQE is calculated relative to the OLED of Comparative Example 1, i.e., the EQE of the OLED of Comparative Example 1 is 100%.

[0138] Table 1

[0139]

[0140] Each technical feature of the above-described embodiments can be combined arbitrarily, and to make the description concise, not all possible combinations of the technical features in the above-described embodiments are described, however, as long as the combinations of the technical features do not exist contradictory, they should be considered as the scope of the present disclosure.

[0141] The above-described embodiments only express several implementation manners of the present application, facilitate specific and detailed understanding of the technical solutions of the present application, but should not be understood as a limitation on the protection scope of the patent. It should be noted that for ordinary skilled persons in the art, on the premise of not departing from the concept of the present application, a number of modifications and improvements can be made, which are all within the protection scope of the present application. It should be understood that the technical solutions obtained by the skilled person in the art through logical analysis, reasoning or limited experiments on the basis of the technical solutions provided by the present application are all within the protection scope of the appended claims of the present application. Therefore, the protection scope of the patent of the present application should be subject to the contents of the appended claims, and the description can be used to explain the contents of the claims.

Claims

1. A composition for an optoelectronic device, characterized in that, It includes a host material, a thiol compound, and a p-type dopant, wherein the host material comprises one or more compounds having the structure shown in formula (I): ； in, Each independently selected or ;X 11 Selected from NR, O, S, C(=O), S(=O) or S(=O)2; X 12 X 13 X 14 X 15 Each is independently selected from CRRˊ or N; and X 12 X 13 X 14 and X 15 At least one of them is selected from CRRˊ;X 21 X 22 X 23 X 24 X 25 and X 26 Each is independently selected from CRRˊ or N; and X 21 X 22 X 23 X 24 X 25 and X 26 At least one of them is selected from CRRˊ; R and Rˊ are each independently selected from hydrogen, halogen, alkyl with 1 to 6 carbon atoms, alkoxy with 1 to 6 carbon atoms, or haloalkyl with 1 to 6 carbon atoms; L1 and L2 are each independently selected from arylene groups having 6 to 20 carbon atoms; Ar1, Ar2, Ar3 and Ar4 are each independently selected from aryl groups with 6 to 20 carbon atoms that are substituted or unsubstituted with S1, and S1 is each independently selected from alkenyl or alkynyl groups with 2 to 9 carbon atoms; and at least one of Ar1, Ar2, Ar3 and Ar4 is selected from aryl groups with 6 to 20 carbon atoms that are substituted with S1. The thiol compound includes one or more compounds having the structure shown in formula (II): ; Among them, R 21 Selected from ;R 22 R 23 and R 24 Each is independently selected from H, alkyl groups having 1 to 6 carbon atoms, alkoxy groups having 1 to 6 carbon atoms, haloalkyl groups having 1 to 6 carbon atoms, or... Each time A1 appears, it is independently selected from a single bond or an alkylene group having 1 to 6 carbon atoms; each time A2 appears, it is independently selected from an alkylene group having 1 to 6 carbon atoms. The P-type dopant includes one or more compounds having the structure shown in formula (III): ;R 31 R 32 R 33 and R 34 Each is independently selected from halogens, , or m is any integer from 0 to 10, R 41 R 42 Each is independently selected from H, alkyl or cyano groups having 1 to 6 carbon atoms.

2. The composition for optoelectronic devices according to claim 1, characterized in that, The main material has one or more of the following characteristics: (1) The above Each is independently selected from any of the following groups: , , , , , , , , , , , , , , , , , , or Each time R1 appears, it is independently selected from hydrogen, halogen, alkyl with 1 to 6 carbon atoms, alkoxy with 1 to 6 carbon atoms, or haloalkyl with 1 to 6 carbon atoms. (2) L1 and L2 are each independently selected , , , or ; Ar1, Ar2, Ar3, and Ar4 are each independently selected from... , , , , , , , , , or S1 is independently selected from alkenyl or alkynyl groups having 2 to 6 carbon atoms; and at least one of Ar1, Ar2, Ar3 and Ar4 is substituted by S1.

3. The composition for optoelectronic devices according to claim 1, characterized in that, The thiol compound includes and One or more of the following; wherein n1, n2, n3, n4, n5 and n6 are each independently selected from any integer from 0 to 4; And / or, the R 31 R 32 R 33 and R 24 Each is independently selected from halogen or m is selected from any integer from 0 to 6.

4. The composition for optoelectronic devices according to any one of claims 1 to 3, characterized in that, The main material includes , , , , , , , , , , 、 、 , , and One or more of the following; m is any integer from 0 to 4; and / or, The thiol compound includes , and One or more of the following; and / or, The P-type dopant includes , and One or more of the following; And / or, the mass ratio of the host material to the thiol compound is (5~9):(0.2~5); and / or, The mass ratio of the host material to the P-type dopant is (5~9):(0.2~5).

5. A polymer, characterized in that, The polymer is obtained by polymerization of the host material, the thiol compound, and the p-type dopant in the composition for optoelectronic devices according to any one of claims 1 to 4.

6. An ink, characterized in that, It includes the host material, thiol compound, p-type dopant, initiator, and solvent as described in any one of claims 1 to 4.

7. The ink according to claim 6, characterized in that, The solvent includes one or more of toluene, o-xylene, m-xylene, p-xylene, o-diethylbenzene, m-diethylbenzene, p-diethylbenzene, cyclohexylbenzene, tetrahydronaphthalene, cyclohexanone, cyclopentanone, anisole, phenethyl ether, p-methyl anisole, and p-methyl phenethyl ether; and / or, The initiator includes one or more of 2-hydroxy-2-methylphenylpropane-1-one, 1-hydroxycyclohexylphenyl ketone, 2-methyl-2-(4-morpholino)-1-(4-(methylthio)phenyl)-1-propanone, and 2,4,6-trimethylbenzoyl-diphenylphosphine oxide.

8. An optoelectronic device, characterized in that, It includes an anode layer, a hole-functional layer, a light-emitting layer, an electron-functional layer, and a cathode layer stacked together. The material of the hole-functional layer is obtained by polymerization of the optoelectronic device composition according to any one of claims 1 to 4, or the polymer according to claim 5, or prepared using the ink according to claim 6 or 7.

9. The optoelectronic device according to claim 8, characterized in that, The hole functional layer includes a hole injection layer and a hole transport layer. The hole injection layer is disposed closer to the anode layer than the hole transport layer. The material of the hole injection layer is obtained by polymerization of the optoelectronic device composition according to any one of claims 1 to 4, or by preparation using the ink according to claim 6 or 7.

10. The optoelectronic device according to claim 9, characterized in that, The materials of the anode layer and the cathode layer are each independently selected from one or more of Al, Au, Ag, Ca, Ba, Mg, Mg / Ag alloy, Cu, Fe, Co, Ni, Mn, Pd, Pt and ITO; And / or, the hole transport layer material comprises 2,9-dioctyldimethylsilylated polyaromatic hydrocarbon, N,N'-diphenyl-N,N'-di(1-naphthyl)-1,1'-biphenyl-4,4'-diamine, 4,4',4''-tris(carbazole-9-yl)triphenylamine, 4,4'-di(9-carbazole)biphenyl, N,N'-di(3-methylphenyl)-N,N'-diphenyl-4,4'-biphenyldiamine, and 1,1-bis[4-[N,N'-di(p-tolyl)amino]phenyl]cyclohexane. One or more of the following: alkylene, polyvinylcarbazole, poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine), poly(9,9-dioctylfluorene-co-bis-N,N-phenyl-1,4-phenylenediamine), N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine, N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine, NiO, WO3, MoO3, and CuO; And / or, the material of the light-emitting layer includes one or more of aluminum 8-hydroxyquinoline, polystyrene, polyethylene glycol propylene terephthalate, dimethylene blue, triphenylamine derivatives, isoquinoline derivatives, and quantum dot materials; optionally, the quantum dot material includes one or more of group II-VI compounds, group III-V compounds, group IV-VI compounds, and group I-III-VI compounds, wherein the group II-VI compounds include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, and Cd One or more of the following compounds: STe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe; the III-V compounds include GaN, GaP, GaAs, and GaS. b. AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs ,InNSb,InPAs,InPSb,GaAlNP,GaAlNAs,GaAlNSb,GaAlPAs,GaAlPSb,GaInNP,GaInNAs,GaInNSb,GaInPAs,GaInPSb,InAlNP,In One or more of AlNAs, InAlNSb, InAlPAs, and InAlPSb, wherein the IV-VI group compounds include one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe, and wherein the I-III-VI group compounds include one or more of CuInS2, CuInSe2, and AgInS2; And / or, the electronic functional layer includes an electron injection layer and / or an electron transport layer, wherein the electron injection layer is made of one or more of lithium, sodium, potassium, rubidium, cesium, magnesium, calcium, gold, silver, copper, iron, nickel, platinum, palladium, ruthenium, ytterbium, molybdenum trioxide, vanadium pentoxide, tungsten trioxide, cesium fluoride, cesium carbonate, lithium fluoride, lithium carbonate, and lithium 8-hydroxyphosphate; and the electron transport layer is made of one or more of 4,7-diphenyl-1,10-phenanthroline, 4,7-diphenyl-1,10-o-phenanthroline, 3-(biphenyl-4-yl)-5-(4-tert-butylphenyl)-4-phenyl-4H-1,2,4-triazole, 1,3,5-tris(1-phenyl-1H-benzimidazol-2-yl)benzene, lithium 8-hydroxyphosphate, and 1,3,5-tricarbazolylstyrene.

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