Ink and preparation method thereof, photoelectric device and preparation method thereof

Abstract

The invention discloses ink and a preparation method thereof, and a photoelectric device and a preparation method thereof. The preparation method of the ink comprises the following steps: providing a first solution, nanoparticles and a second solvent; wherein the first solution comprises a modifier, a cross-linking agent and a first solvent; mixing the first solution with nanoparticles to obtain a dispersion liquid; collecting dispersoid of the dispersion liquid; and dispersing the dispersoid in a second solvent to obtain the ink. The interface contact quality can be improved, and the performance of the photoelectric device is improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of optoelectronic devices, in particular to an ink, a preparation method thereof, an optoelectronic device and a preparation method thereof. BACKGROUND

[0002] Solution processing technology has unique advantages such as low cost and large-area manufacturing, and is favored in the field of optoelectronic device manufacturing. However, the quality of the nanoparticle film obtained by solution processing method such as inkjet printing technology is poor, which affects the performance of the optoelectronic device. SUMMARY

[0003] Therefore, it is necessary to provide an ink and a preparation method thereof. The ink prepared by the preparation method of the present application can be used to prepare an optoelectronic device, improve the film forming quality of the functional layer film in the optoelectronic device, and improve the interface contact quality between the quantum dot nanoparticle film and the zinc oxide nanoparticle film, reduce the electron quenching, improve the electron injection efficiency, and further improve the performance of the optoelectronic device.

[0004] An embodiment of the present application provides a preparation method of an ink.

[0005] A preparation method of an ink, comprising the following steps:

[0006] providing a first solution, inorganic nanoparticles and a second solvent; wherein the first solution comprises a modifier, a crosslinking agent and a first solvent;

[0007] mixing the first solution and the nanoparticles to obtain a dispersion liquid;

[0008] collecting the dispersed phase of the dispersion liquid;

[0009] and dispersing the dispersed phase in the second solvent to obtain the ink.

[0010] In some embodiments, the step of washing the dispersed phase with a third solvent is further included after collecting the dispersed phase of the dispersion liquid.

[0011] In some embodiments, the number of times of washing the dispersed phase with the third solvent is not less than three.

[0012] In some embodiments, the third solvent comprises a polar solvent and / or a non-polar solvent.

[0013] In some embodiments, the third solvent comprises one or more of methanol, acetone, ethylene glycol, DMF, acetonitrile and chloroform.

[0014] In some embodiments, the step of washing the dispersed phase is further included; preferably, when washing the dispersed phase, the first solvent is used for washing, and the number of times of washing is not less than three.

[0015] In some embodiments, the modifier is added in an amount of 0.1 wt% to 10 wt% of the nanoparticles.

[0016] In some embodiments, the molar ratio of the modifier to the crosslinking agent is controlled to be less than 1:1 in the first solution, and the remaining amount of the modifier is added to the dispersion after obtaining the dispersion, and the dispersed phase of the dispersion is collected.

[0017] In some embodiments, the modifier has a chemical formula of HS-R1-COOH, and / or the modifier has a chemical formula of H2N-R2-NH2; wherein R1 and R2 are each independently selected from C4-C30 hydrocarbylene or hydrocarbyloxy groups that are unsubstituted or substituted with amino, halogen, hydroxyl, carboxyl, ester, acyl, nitro, sulfonic acid, aldehyde, thiol, cyano, hydrocarbyl, or hydrocarbyloxy groups.

[0018] In some embodiments, the crosslinking agent includes one or more of N-hydroxysuccinimide, 2-(7-azabenzotriazol-1-yl)-N,N,N',N'-tetramethyluronium hexafluorophosphate, (4,6-dimethoxy-1,3,5-triazin-2-yl)-4-methylmorpholinium chloride, benzoyl chloride, maleimide, disuccinimidyl ester, ethylene sulfone, N,N'-dicyclohexyl carbodiimide, and N-hydroxybenzotriazole.

[0019] In some embodiments, the nanoparticles include one or more of doped or undoped metal oxides, metal sulfides, carbon-based nanoparticles, silicon-based nanoparticles, quantum dot nanoparticles, perovskite nanoparticles.

[0020] In some embodiments, the first solvent is a polar solvent.

[0021] In some embodiments, the second solvent is a polar solvent.

[0022] In some embodiments, the first solvent includes an alcohol having a number of carbon atoms of 1 to 10.

[0023] In some embodiments, the second solvent includes at least one of a C6 to C40 aliphatic hydrocarbon, a C6 to C30 aromatic hydrocarbon, a nitrogen-containing heterocyclic compound, and a C12 to C22 aromatic ether.

[0024] In some embodiments, the modifier includes one or more of 8-mercaptooctanoic acid, 9-mercaptononanoic acid, 11-mercaptoundecanoic acid, 7-mercaptoheptanoic acid, and 16-mercaptohexadecanoic acid, 1,6-diaminopentane, 1,7-diaminoheptane, 1,5-diaminopentane, and 1,13-tridecanediamine.

[0025] In some embodiments, the nanoparticles comprise one or more of zinc oxide, titanium oxide, silicon dioxide, aluminum oxide, nitrogen-doped zinc oxide, iron-doped titanium oxide, cerium-doped silicon dioxide, cadmium sulfide, zinc sulfide, lead sulfide, molybdenum sulfide, carbon nanotubes, graphene, fullerenes, carbon quantum dots, pure silicon nanoparticles, silicon oxide nanoparticles, borosilicate glass nanoparticles, cadmium selenide quantum dots, cadmium sulfide quantum dots, cadmium telluride quantum dots, indium phosphide quantum dots, methylammonium lead iodide perovskite, formamidinium lead iodide perovskite, inorganic cesium lead halide perovskite.

[0026] In some embodiments, the first solvent is selected from one or more of methanol, butanol, and propanol.

[0027] In some embodiments, the second solvent comprises one or more of toluene, ethylbenzene, o-xylene, m-xylene, p-xylene, o-chlorotoluene, p-chlorotoluene, m-chlorotoluene, o-diethylbenzene, m-diethylbenzene, p-diethylbenzene, o-dichlorobenzene, m-dichlorobenzene, p-dichlorobenzene, mesitylene, mesitylene, trimethylbenzene, tetramethylbenzene, triamylbenzene, pentyltoluene, 1-methylnaphthalene, dihexylbenzene, butylbenzene, sec-butylbenzene, tert-butylbenzene, isobutylbenzene, dibutylbenzene, cumene, p-cymene, p-diisopropylbenzene, pentylbenzene, di-pentylbenzene, dodecylbenzene, tetrahydronaphthalene, cyclohexylbenzene, 1,3,5-trimethylbenzene, 1-chloronaphthalene, 1-tetralone, 3-phenoxytoluene, 1-methoxynaphthalene, dimethylnaphthalene, 3-isopropylbiphenyl, 1,2,4-trimethylbenzene, biphenyl, benzyl benzoate, dibenzyl ether, indene, benzylbenzene, divinylbenzene, indane, or epoxyphenylhexane, n-hexane, cyclohexane, octane, nonane, decane, undecane, dodecane, tridecane, tetradecane, pentadecane, and hexadecane.

[0028] An embodiment of the present application provides an ink.

[0029] An ink prepared by the preparation method described above, wherein the ink comprises at least modified nanoparticles.

[0030] An embodiment of the present application provides a preparation method of an optoelectronic device.

[0031] A preparation method of an optoelectronic device, comprising the following steps:

[0032] providing a substrate;

[0033] preparing a first ink by the preparation method described above;

[0034] disposing the first ink on the substrate, annealing, and forming a light-emitting layer;

[0035] preparing a second ink by the preparation method described above, disposing the second ink on the light-emitting layer, annealing, and forming an electron functional layer; and

[0036] forming an electrode on the electronic functional layer to obtain the optoelectronic device.

[0037] In some embodiments, the method further comprises a step of modifying the light emitting layer with a modifying agent after the step of forming the light emitting layer.

[0038] In some embodiments, the annealing is performed at a temperature of 60-80 °C for at least 10 minutes.

[0039] In some embodiments, the method further comprises a step of forming an interface layer on the light emitting layer after the step of forming the light emitting layer.

[0040] In some embodiments, the material for forming the interface layer on the light emitting layer comprises R3-(NH2) x , x > 2, and R3 is selected from a benzene ring, a benzoid, a biphenyl, a carbozole, an acridine, an indole, a benzopyrrole, or a benzodipyrryl.

[0041] In some embodiments, the first solvent used in the preparation of the second ink has a different polarity than the first solvent used in the preparation of the first ink.

[0042] In some embodiments, the first ink is a quantum dot modified nanoparticle containing ink.

[0043] In some embodiments, the second ink comprises a zinc oxide ink.

[0044] In some embodiments, the light emitting layer is modified with a modifying agent for at least 30 minutes.

[0045] In some embodiments, the material for forming the interface layer comprises one or more of hexaaminobenzene, p-phenylenediamine, m-phenylenediamine, 1,3,5-triaminobenzene, 4,4'-diaminobiphenyl, 1,4-bis(4-aminophenoxy)benzene, 1,3,5-tris(4-aminophenoxy)benzene.

[0046] In some embodiments, the thickness of the interface layer is controlled to be between 1 nm and 20 nm.

[0047] In some embodiments, the first ink is deposited on a substrate using an inkjet printing process.

[0048] In some embodiments, the second ink is deposited on the light emitting layer using an inkjet printing process.

[0049] In some embodiments, the thickness of the light emitting layer is controlled to be between 20 nm and 100 nm.

[0050] In some embodiments, the thickness of the electronic functional layer film is controlled to be 20-100 nm.

[0051] An optoelectronic device is provided.

[0052] An optoelectronic device is prepared by the method described above.

[0053] In some embodiments, the optoelectronic device comprises, in sequence, an anode, a hole functional layer, a light-emitting layer, an interface layer, an electronic functional layer, and a cathode.

[0054] In some embodiments, the light-emitting layer is a perovskite quantum dot light-emitting layer, a quantum dot light-emitting layer, or an organic light-emitting layer.

[0055] In some embodiments, the electronic functional layer comprises an electron transport layer and / or an electron injection layer.

[0056] In some embodiments, the hole functional layer comprises a hole injection layer and / or a hole transport layer.

[0057] In some embodiments, the interface layer comprises at least a layer of R3-(NH2) x A structure layer is prepared, wherein x is greater than or equal to 2, and R3 is selected from one or more combinations of an aryl group having 6-60 ring atoms, a heteroaryl group having 5-60 ring atoms, an aryloxy group having 6-60 ring atoms, and a heteroaryloxy group having 5-60 ring atoms, wherein the heteroatoms in the heteroaryl group or the heteroaryloxy group are N, S, O, P, Si, or B, and the number of heteroatoms is 1-1.

[0058] In some embodiments, the interface layer comprises at least a layer of hexaaminobenzene.

[0059] In some embodiments, the material of the anode and / or the cathode comprises one or more of a metal, a carbon material, and a metal oxide, the metal comprises one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb, and Mg, the carbon material comprises one or more of graphite, carbon nanotubes, graphene, and carbon fibers, and the metal oxide comprises a doped or undoped metal oxide, comprises one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO, and AMO, or comprises a composite electrode comprising a doped or undoped transparent metal oxide sandwiched between a metal, the composite electrode comprising one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2, and TiO2 / Al / TiO2.

[0060] In some embodiments, the material of the electron transport layer and / or the electron injection layer comprises inorganic material and / or organic material; the inorganic material is selected from one or more of doped or non-doped zinc oxide, barium oxide, aluminum oxide, nickel oxide, titanium oxide, tin oxide, tantalum oxide, zirconium oxide, nickel oxide, lithium titanium oxide, zinc aluminum oxide, zinc manganese oxide, zinc tin oxide, zinc lithium oxide, indium tin oxide, cadmium sulfide, zinc sulfide, molybdenum sulfide, tungsten sulfide, copper sulfide, zinc stannate, indium phosphide, gallium phosphide, copper indium sulfide, copper gallium sulfide, barium titanate, and the doping elements include one or more of aluminum, magnesium, lithium, manganese, yttrium, lanthanum, copper, nickel, zirconium, cerium, gadolinium; the organic material is selected from one or more of quinoxaline compounds, imidazole compounds, triazine compounds, fluorene-containing compounds, hydroxyquinoline compounds.

[0061] In some embodiments, the material of the hole transport layer and / or the hole injection layer comprises at least one of TFB, CuPc, PVK, Poly-TPD, DNTPD, TCATA, TCCA, CBP, TPD, NPB, NPD, PEDOT:PSS, TAPC, MCC, F4-TCNQ, HATCN, 4,4',4'-tris(N-3-methylphenyl-N phenylamino)triphenylamine, polyaniline, transition metal oxide, transition metal sulfide, transition metal stannate, doped graphene, non-doped graphene, and C60.

[0062] In some embodiments, the perovskite quantum dot comprises a doped or non-doped inorganic perovskite semiconductor or an organic-inorganic hybrid perovskite semiconductor, the inorganic perovskite semiconductor has a general structure of AMX3, wherein A is cesium, M includes one or more of lead, tin, copper, nickel, cadmium, cadmium, manganese, cobalt, iron, chromium, ytterbium, europium, and X is halogen, including one or more of chlorine, bromine, and iodine, the organic-inorganic hybrid perovskite semiconductor has a general structure of BM’X’3, wherein B includes CH3(CH2) n-2 NH3 or [NH3(CH2) n NH3] with n≥2, M’ includes one or more of lead, tin, copper, nickel, cadmium, cadmium, manganese, cobalt, iron, chromium, ytterbium, europium, and X’ is halogen, including one or more of chlorine, bromine, and iodine.

[0063] In some embodiments, the material of the quantum dot light-emitting layer comprises at least one of single-structure quantum dots and core-shell quantum dots, the material of the single-structure quantum dots is selected from at least one of II-VI compounds, IV-VI compounds, III-V compounds and I-III-VI compounds, wherein the II-VI compounds are selected from at least one of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe, the IV-VI compounds are selected from at least one of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe and SnPbSTe, the III-V compounds are selected from at least one of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs or InAlPSb, and the I-III-VI compounds are selected from at least one of CuInS2, CuInSe2 and AgInS2.

[0064] In some embodiments, the material of the organic light-emitting layer comprises at least one of 4,4'-bis(N-carbazole)-1,1'-biphenyl: tris[2-(p-tolyl)pyridine-C2,N) iridium(III), 4,4',4"-tris(carbazole-9-yl)triphenylamine: tris[2-(p-tolyl)pyridine-C2,N) iridium, diaryl anthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, and DBP fluorescent materials, polyacetylene and its derivatives, polyparaphenylene and its derivatives, polythiophene and its derivatives, and polyfluorene and its derivatives.

[0065] The ink prepared by the preparation method of the ink can be used to prepare a photoelectric device, and the performance of the photoelectric device is improved. BRIEF DESCRIPTION OF DRAWINGS

[0066] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed in the embodiment description will be briefly introduced. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative labor.

[0067] In order to more completely understand the present application and its beneficial effects, the following will be described with reference to the drawings. In the following description, the same reference numerals represent the same parts.

[0068] Figure 1 The preparation method of the ink according to an embodiment of the present application is shown in the flowchart.

[0069] Figure 2 The preparation method of the photoelectric device according to an embodiment of the present application is shown in the flowchart.

[0070] Figure 3 The structure of the photoelectric device according to an embodiment of the present application is shown in the schematic diagram.

[0071] BRIEF DESCRIPTION OF DRAWINGS

[0072] 10, photoelectric device; 101, substrate; 102, bottom electrode; 103, hole injection layer; 104, hole transport layer; 105, light-emitting layer; 106, interface layer; 107, electron functional layer; 108, top electrode. DETAILED DESCRIPTION

[0073] In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application. However, the present application can be practiced without the specific details. In other instances, well-known methods have not been described in detail in order not to unnecessarily obscure aspects of the present application. In the description of the present application, if one or more of the same reference numerals are designated throughout the several drawings, it is to be understood that, unless otherwise indicated, such designations are not intended to convey an importance or a relative meaning. It will be further understood that the drawings are not necessarily to scale, with emphasis instead being placed upon the illustrative aspects as described herein. In the description of the present application, if a singular form is used, it is to be understood that the singular form includes one or more of the same unless otherwise indicated. In the description of the present application, if a plural form is used, it is to be understood that the plural form includes two or more of the same unless otherwise indicated.

[0074] In the present application, "optionally", "optional", "option" means that it can or can not exist, that is, it means that it is selected from any one of the two parallel schemes of "yes" or "no". If there are multiple "options" in a technical solution, unless otherwise specified, and there is no contradiction or mutual restriction, each "option" is independent of each other. In the present application, "optionally contains", "optionally includes" and the like are described as "contains or does not contain".

[0075] In the present application, if there is no contrary description, the sum of the parts of each component in the composition can be 100 parts by weight. If not specifically pointed out, the basis of the percentage (including weight percentage) of the present application is the total weight of the composition, and "wt%" in the present application means mass percentage.

[0076] In the present application, if a numerical interval (i.e. a numerical range) is involved, unless otherwise specified, the distribution of the optional values in the numerical interval is considered to be continuous, and includes both numerical endpoints (i.e. the minimum value and the maximum value) of the numerical interval, and every value between the two numerical endpoints. Unless otherwise specified, when the numerical interval only points to the integers in the numerical interval, including the two endpoint integers of the numerical range and every integer between the two endpoints, it is equivalent to directly listing each integer. When multiple numerical ranges are provided to describe a feature or a characteristic, these numerical ranges can be combined. In other words, unless otherwise indicated, the numerical range disclosed in the present application should be understood to include any and all sub-ranges included therein. The "numerical value" in the numerical interval can be any quantitative value, such as a number, a percentage, a ratio, etc. The "numerical interval" is allowed to broadly include quantitative intervals such as percentage intervals, ratio intervals, and value intervals.

[0077] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used in the description herein is for describing particular embodiments only and is not intended to be limiting of the application. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0078] The embodiment of the present application provides a preparation method of ink, to solve at least one of the following technical problems in the prior art: (1) capillary flow effect and / or marangoni effect caused by thermodynamic / kinetic instability when liquid film is converted into solid phase, thereby causing uneven distribution of solute particles, finally leading to uneven film formation, affecting device performance and stability; (2) when the interface contact between the functional layers of the nanoparticle film is poor in the solution processing method, structural defects are caused, further leading to electron quenching at the interface between the functional layers, further reducing the performance and stability of the optoelectronic device. The preparation method of the ink can be used for the preparation of optoelectronic devices.

[0079] For example, referring to Figure 1 as shown, Figure 1 The preparation method of the ink is shown in the flow chart of the embodiment of the present application, and the preparation method of the ink comprises the following steps:

[0080] The preparation method of the ink comprises the following steps:

[0081] The first solution, nanoparticles and the second solvent are provided; wherein the first solution comprises a modifier, a crosslinking agent and a first solvent.

[0082] The first solution is mixed with the nanoparticles to obtain a dispersion liquid.

[0083] The dispersed phase of the dispersion liquid is collected.

[0084] The dispersed phase is dispersed in the second solvent to obtain the ink.

[0085] In some embodiments, the chemical formula of the modifier is HS-R1-COOH, and / or the chemical formula of the modifier is H2N-R2-NH2; wherein R1 and R2 are each independently selected from C4-C30 hydrocarbylene or hydrocarbyloxy which is unsubstituted or substituted with amino, halogen, hydroxyl, carboxyl, ester, acyl, nitro, sulfonic acid, aldehyde, mercapto, cyano, hydrocarbyl, hydrocarbyloxy.

[0086] In some embodiments, the modifying agent includes one or more of 8-mercaptooctanoic acid, 9-mercaptononanoic acid, 11-mercaptoundecanoic acid, 7-mercaptoheptanoic acid, and 16-mercaptohexadecanoic acid. For example, the functionalized modifying agent can bind through the thiol group to the cations that are not coordinated to the nanoparticle surface. For example, the functionalized modifying agent 8-mercaptooctanoic acid, i.e., N-hydroxysuccinimidyl ester, can bind through the thiol group to the cations that are not coordinated to the nanoparticle surface.

[0087] In some embodiments, the modifying agent includes one or more of an aqueous solution of 1,6-diaminopentane, 1,7-diaminoheptane, 1,5-diaminopentane, and 1,13-tridecanediamine. For example, the functionalized modifying agent, e.g., N-hydroxysuccinimidyl ester, attached to the nanoparticle surface through the hydroxyl group will undergo an amide reaction with the amine compound (with its amino group -NH2) to form a stable amide bond (-CONH-) and thereby attach the amine compound to the original carboxyl-containing molecule or surface.

[0088] In some embodiments, the crosslinking agent includes one or more of N-hydroxysuccinimide, 2-(7-azabenzotriazol-l-yl)-N,N,N',N'-tetramethyluronium hexafluorophosphate, (4,6-dimethoxy-l,3,5-triazin-2-yl)-4-methylmorpholinium chloride, benzoyl chloride, maleimide, disuccinimidyl ester, ethylene sulfone, N,N'-dicyclohexyl carbodiimide, and N-hydroxybenzotriazole. For example, the crosslinking agent includes a combination of N,N'-dicyclohexyl carbodiimide and N-hydroxybenzotriazole, where the molar ratio of N,N'-dicyclohexyl carbodiimide to N-hydroxybenzotriazole is 1:1 to 2:1.

[0089] In some embodiments, the nanoparticle includes one or more of a doped or undoped metal oxide, a metal sulfide, a metal nanoparticle, a carbon-based nanoparticle, a silicon-based nanoparticle, a quantum dot nanoparticle, a perovskite nanoparticle, a magnetic nanoparticle.

[0090] In some embodiments, the doped or undoped metal oxide includes one or more of zinc oxide (ZnO), titanium oxide (TiO2), silicon dioxide (SiO2), aluminum oxide (Al2O3), nitrogen-doped zinc oxide (N-ZnO), iron-doped titanium oxide (Fe-TiO2), cerium-doped silicon dioxide (Ce-SiO2).

[0091] In some embodiments, the metal sulfide includes one or more of cadmium sulfide (CdS), zinc sulfide (ZnS), lead sulfide (PbS), molybdenum sulfide (MoS2).

[0092] In some embodiments, the carbon-based nanoparticles include one or more of carbon nanotubes (CNTs), graphene, fullerenes (e.g., C60, C70), carbon quantum dots (CQDs).

[0093] In some embodiments, the silicon-based nanoparticles include one or more of pure silicon nanoparticles (Si NPs), silicon oxide nanoparticles (SiO2 NPs), borosilicate glass nanoparticles (BSG NPs).

[0094] In some embodiments, the quantum dot nanoparticles include one or more of cadmium selenide quantum dots (CdSe QDs), cadmium sulfide quantum dots (CdS QDs), cadmium telluride quantum dots (CdTe QDs), indium phosphide quantum dots (InP QDs).

[0095] In some embodiments, the perovskite nanoparticles include one or more of methylammonium lead iodide perovskite (CH3NH3PbI3), formamidinium lead iodide perovskite (HC(NH2)2PbI3), inorganic cesium lead halide perovskite (CsPbX3, X = Cl, Br, I).

[0096] In some embodiments, the first solvent is a polar solvent.

[0097] In some embodiments, the second solvent is a polar solvent.

[0098] In some embodiments, the second solvent has a polarity less than that of the first solvent.

[0099] In some embodiments, the first solvent includes an alcohol having a carbon atom number of 1-10.

[0100] In some embodiments, the first solvent is selected from one or more of methanol, butanol, and propanol.

[0101] In some embodiments, the second solvent includes at least one of a C6-C40 aliphatic hydrocarbon, a C6-C30 aromatic hydrocarbon, a nitrogen-containing heterocyclic compound, and a C12-C22 aromatic ether.

[0102] In some embodiments, the second solvent is selected from one or more of toluene, ethylbenzene, o-xylene, m-xylene, p-xylene, o-chlorotoluene, p-chlorotoluene, m-chlorotoluene, o-diethylbenzene, m-diethylbenzene, p-diethylbenzene, o-dichlorobenzene, m-dichlorobenzene, p-dichlorobenzene, mesitylene, tetramethylbenzene, triamylbenzene, pentyltoluene, 1-methylnaphthalene, dihexylbenzene, butylbenzene, sec-butylbenzene, t-butylbenzene, isobutylbenzene, dibutylbenzene, cumene, p-cymene, p-diisopropylbenzene, amylbenzene, diamylbenzene, dodecylbenzene, tetrahydronaphthalene, cyclohexylbenzene, 1,3,5-trimethylbenzene, 1-chloronaphthalene, 1-tetralone, 3-phenoxytoluene, 1-methoxynaphthalene, dimethylnaphthalene, 3-isopropylbiphenyl, 1,2,4-trimethylbenzene, biphenyl, benzyl benzoate, dibenzyl ether, indene, benzylbenzene, divinylbenzene, indane, or epoxyphenylisane, n-hexane, cyclohexane, octane, nonane, decane, undecane, dodecane, tridecane, tetradecane, pentadecane, and hexadecane.

[0103] In some embodiments, the method further comprises a step of washing the dispersed phase of the dispersion with a third solvent after collecting the dispersed phase of the dispersion.

[0104] In some embodiments, the step of washing the dispersed phase of the dispersion with a third solvent is performed not less than three times.

[0105] In some embodiments, the third solvent comprises a polar solvent and / or a non-polar solvent.

[0106] In some embodiments, the third solvent comprises one or more of methanol, acetone, ethylene glycol, DMF, acetonitrile, and chloroform.

[0107] In some embodiments, the amount of the modifier added is 0.1wt% to 10wt% of the nanoparticles. Preferably, the amount of the modifier added is 1wt% to 8wt% of the nanoparticles. Further preferably, the amount of the modifier added is 2wt% to 6wt% of the nanoparticles. For example, when the modifier comprises 1,6-diaminopentane (H2N-(CH2)6-NH2), the amount of 1,6-diaminopentane is controlled to be 0.1wt% to 10wt% of the quantum dot ink, the amide bond of 1,6-diaminopentane effectively links the nanoparticles as a "bridge", but excessive bridging of the quantum dots is not conducive to the inkjet printing process of the modified ink, and the formation of a chain or network with a length greater than 1000nm can cause the print head to be blocked in the inkjet printing process, therefore, the amount of the modifier used in the present application is controlled to be within 10wt% of the quantum dot ink, to ensure the formation of a one-dimensional chain structure or a two-dimensional network structure with a length less than 1000nm.

[0108] In some embodiments, the method further comprises the step of: in the first solution, controlling the molar ratio of the modifying agent to the crosslinking agent to be less than 1:1. After obtaining the dispersion, the remaining amount of the modifying agent is added to the dispersion, and the dispersed phase of the dispersion is collected. The remaining amount of the modifying agent is sufficient to achieve the set percentage of the modifying agent relative to the mass of the nanoparticles.

[0109] In the present application, the crosslinking agent is used to link the amine compound to the original molecule or surface containing carboxyl. The modifying agent and the crosslinking agent are set in a molar ratio of less than 1:1 to achieve complete esterification of the carboxyl group (-COOH) of the modifying agent and NHS to generate N-hydroxysuccinimide ester. The esterification reaction can be represented as: R1-COOH + NHS → R1-COO-NHS + H2O, and the result of the esterification reaction is to form a reactive intermediate. In the present application, commercial ink such as quantum dot ink or zinc oxide ink is added to the first solution containing the modifying agent, such as 8-mercaptooctanoic acid (HS-(CH2)7-COOH), and the crosslinking agent, such as N-hydroxysuccinimide (NHS), to achieve the combination of 8-mercaptooctanoic acid through the mercapto head to the nanoparticles instead of the carboxyl group, because N-hydroxysuccinimide can combine with the carboxyl group of 8-mercaptooctanoic acid to form a reactive intermediate, which can prevent the carboxyl group of 8-mercaptooctanoic acid from combining with the nanoparticles and facilitate the combination of the amine compound at its carboxyl group. The subsequent intermediate will then undergo amidation with the modifying agent, such as 1,6-diaminopentane (H2N-(CH2)6-NH2), to generate a stable amide bond, i.e., the carboxyl group on 8-mercaptooctanoic acid is broken from N-hydroxysuccinimide and combined with the amine group on the modifying agent. This step effectively links the nanoparticles through the amide bond as a "bridge". See the following reaction formula, where the nanoparticles are taken as an example of quantum dots (QD), and the amidation reaction generates a stable amide bond, which can effectively increase the motion resistance of the solute in the solution, reduce the influence of thermodynamic / kinetic effects on the distribution of solute molecules, and thus improve the uniformity of the functional thin film.

[0110] R1-COOH + NHS → R1-COO-NHS + H2O

[0111] R1-COO-NHS + QD → NHS-OOC-R1-QD-R1-COO-NHS

[0112] NHS-OOC-R1-QD-R1-COO-NHS + H2N-R2-NH2 → [QD-R1-CONH-R2-NHOC-R1-QD] n

[0113] In some embodiments, the first solution is mixed with the nanoparticles while continuously stirring for not less than 30 minutes.

[0114] In some embodiments, the dispersion is washed.

[0115] In some embodiments, the dispersion is washed with the first solvent, and the washing is performed for no less than 3 times.

[0116] In some embodiments, the total mass concentration of the modifier and the crosslinking agent in the first solution is 0.01 g / mL to 1 g / mL.

[0117] In some embodiments, when the dispersion is dispersed in the second solvent, the mass concentration of the dispersion is controlled to be 0.01 g / mL to 10 g / mL.

[0118] An embodiment of the present application provides an ink.

[0119] An ink is prepared by using the preparation method.

[0120] In some embodiments, the ink comprises at least modified nanoparticles.

[0121] In some embodiments, the ink comprises at least quantum dot ink, conductive ink, and the conductive ink comprises zinc oxide ink.

[0122] An embodiment of the present application provides a preparation method of an optoelectronic device.

[0123] It should be noted that, in the present application, unless otherwise specified, each reaction step can be performed in the order described herein or can not be performed in the order described herein. For example, each reaction step can comprise other steps, and the order of the reaction steps can be appropriately changed. This can be determined by a person skilled in the art according to common knowledge and experience. Preferably, the reaction method in the present application is performed in sequence.

[0124] A preparation method of an optoelectronic device, referring to Figure 2 as shown in the figure, Figure 2 A flow chart of the preparation method of the optoelectronic device of an embodiment of the present application, comprising the following steps:

[0125] A substrate is provided.

[0126] A first ink is prepared by using the preparation method.

[0127] The first ink is arranged on the substrate, annealed, and a light-emitting layer is formed.

[0128] A second ink is prepared by using the preparation method, and the second ink is arranged on the light-emitting layer, annealed, and an electron functional layer is formed.

[0129] An electrode is prepared on the electron functional layer, and an optoelectronic device is obtained.

[0130] In some embodiments, after the light-emitting layer is formed, a step of forming an interface layer on the light-emitting layer is further included.

[0131] In some embodiments, the material for forming the interface layer on the light-emitting layer includes R3-(NH2) x , x≥2, R3is selected from benzene ring, acene, biphenyl, carazole, acridine, indole, benzopyrrole or benzodipyrryl;

[0132] In some embodiments, the material for forming the interface layer includes one or more of hexaaminobenzene, p-phenylenediamine, m-phenylenediamine, 1,3,5-triaminobenzene, 4,4'-diaminobiphenyl, 1,4-bis(4-aminophenoxy)benzene, 1,3,5-tris(4-aminophenoxy)benzene.

[0133] In some embodiments, the material for forming the interface layer includes hexaaminobenzene. The interface layer functions as follows: through the binding of the amine group on the surface of the interface layer and the carboxyl group of the modifier on the surface of the quantum dot layer, the quantum dot layer and the zinc oxide layer form a close interface contact, reducing the electron quenching caused by structural defects. Through the conjugated structure of the interface layer, such as hexaaminobenzene, the electron cloud delocalization is effectively promoted, further improving the efficiency of the zinc oxide electron injection into the quantum dot.

[0134] In some embodiments, the thickness of the interface layer is controlled to be 1-20 nm.

[0135] In some embodiments, when the first ink is disposed on the substrate, an inkjet printing process is used.

[0136] In some embodiments, when the second ink is disposed on the light-emitting layer, an inkjet printing process is used.

[0137] It should be noted that when inkjet printing is used, the nozzle is selected: a nozzle suitable for the size of the nanoparticles is selected to ensure that the size and position of the droplets can be accurately controlled, and printing parameters such as droplet spacing, scanning speed, etc. are set. The above-mentioned inkjet printing can use the printing process in conventional technology, and the inkjet printing is only required to control the thickness of the thin film layer.

[0138] In some embodiments, the thickness of the light-emitting layer is controlled to be 20-100 nm.

[0139] In some embodiments, the thickness of the electron functional layer thin film is controlled to be 20-100 nm.

[0140] In some embodiments, the first ink is an ink containing quantum dot modified nanoparticles.

[0141] In some embodiments, the second ink includes a zinc oxide ink.

[0142] In some embodiments, the step of modifying the light-emitting layer with a modifier is included before fabricating the electronic functional layer on the light-emitting layer.

[0143] In some embodiments, when modifying the light-emitting layer with a modifier, the following steps are included: impregnating the light-emitting layer with the modifier for at least 30 minutes. In this application, immersing the light-emitting layer in a modifier such as an aqueous solution of 1,6-diaminopentane after processing can further functionalize the surface of the light-emitting layer, such as a quantum dot film, by connecting unconnected quantum dots in series, which can effectively improve the structural stability of the quantum dot film, thereby improving the operating life of optoelectronic devices.

[0144] In some embodiments, the drying process involves baking at a temperature of 60°C to 80°C for at least 10 minutes.

[0145] In some embodiments, the polarity of the first solvent used to prepare the quantum dot ink is different from the polarity of the first solvent used to prepare the first ink.

[0146] One embodiment of this application provides an optoelectronic device.

[0147] An optoelectronic device is prepared using the above-described preparation method.

[0148] In some of these embodiments, see Figure 3 As shown, Figure 3 This is a schematic diagram of the structure of an optoelectronic device 100 according to an embodiment of the present invention. The optoelectronic device includes an anode, a hole functional layer, a light-emitting layer 105, an interface layer 106, an electronic functional layer 107, and a cathode, which are stacked sequentially.

[0149] In some embodiments, the light-emitting layer 105 is a perovskite quantum dot light-emitting layer, a quantum dot light-emitting layer, or an organic light-emitting layer.

[0150] In some embodiments, the perovskite quantum dots include doped or undoped inorganic perovskite semiconductors or organic-inorganic hybrid perovskite semiconductors. The general structural formula of the inorganic perovskite semiconductor is AMX3, where A is cesium, M includes one or more of lead, tin, copper, nickel, cadmium, manganese, cobalt, iron, chromium, ytterbium, and europium, and X is a halogen, including one or more of chlorine, bromine, and iodine. The general structural formula of the organic-inorganic hybrid perovskite semiconductor is BM'X'3, where B includes CH3(CH2). n-2 NH3 or [NH3(CH2)] n [NH3], where n≥2, M' includes one or more of lead, tin, copper, nickel, cadmium, manganese, cobalt, iron, chromium, ytterbium, and europium, and X' is a halogen, including one or more of chlorine, bromine, and iodine.

[0151] In some embodiments, the material of the quantum dot light-emitting layer comprises at least one of single-structure quantum dots and core-shell structure quantum dots, and the material of the single-structure quantum dots is selected from at least one of II-VI compounds, IV-VI compounds, III-V compounds and I-III-VI compounds, wherein the II-VI compounds are selected from at least one of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe, the IV-VI compounds are selected from at least one of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe and SnPbSTe, the III-V compounds are selected from at least one of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs or InAlPSb, and the I-III-VI compounds are selected from at least one of CuInS2, CuInSe2 and AgInS2.

[0152] In some embodiments, the material of the organic light-emitting layer comprises at least one of 4,4'-bis(N-carbazole)-1,1'-biphenyl: tris[2-(p-tolyl)pyridine-C2,N) iridium(III), 4,4',4"-tris(carbazole-9-yl) triphenylamine: tris[2-(p-tolyl)pyridine-C2,N) iridium, diaryl anthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, and DBP fluorescent materials, polyacetylene and its derivatives, polybenzene and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives.

[0153] In some embodiments, the electronic functional layer 107 comprises an electron transport layer and / or an electron injection layer.

[0154] In some embodiments, the material of the electron transport layer and / or the electron injection layer comprises inorganic material and / or organic material; the inorganic material is selected from one or more of doped or non-doped zinc oxide, barium oxide, aluminum oxide, nickel oxide, titanium oxide, tin oxide, tantalum oxide, zirconium oxide, nickel oxide, lithium titanium oxide, zinc aluminum oxide, zinc manganese oxide, zinc tin oxide, zinc lithium oxide, indium tin oxide, cadmium sulfide, zinc sulfide, molybdenum sulfide, tungsten sulfide, copper sulfide, zinc stannate, indium phosphide, gallium phosphide, copper indium sulfide, copper gallium sulfide, barium titanate, and the doping elements include one or more of aluminum, magnesium, lithium, manganese, yttrium, lanthanum, copper, nickel, zirconium, cerium, gadolinium; the organic material is selected from one or more of quinoxaline compounds, imidazole compounds, triazine compounds, fluorene-containing compounds, hydroxyquinoline compounds.

[0155] In some embodiments, the hole functional layer comprises a hole injection layer 103 and / or a hole transport layer 104.

[0156] In some embodiments, the material of the hole transport layer 103 and / or the hole injection layer 104 comprises at least one of TFB, CuPc, PVK, Poly-TPD, DNTPD, TCATA, TCCA, CBP, TPD, NPB, NPD, PEDOT:PSS, TAPC, MCC, F4-TCNQ, HATCN, 4,4',4'-tris(N-3-methylphenyl-N phenyl amino) triphenylamine, polyaniline, transition metal oxide, transition metal sulfide, transition metal stannate, doped graphene, non-doped graphene, and C60.

[0157] In some embodiments, the hole functional layer comprises a hole injection layer 103 and a hole transport layer 104.

[0158] In some embodiments, the interface layer comprises at least R3-(NH2) xThe prepared structure layer, wherein x≥2, R3 is selected from the group consisting of one or more combinations of aryl with ring atoms number of 6 to 60, heteroaryl with ring atoms number of 5 to 60, aryloxy with ring atoms number of 6 to 60, and heteroaryloxy with ring atoms number of 5 to 60, wherein the heteroatoms in the heteroaryl or heteroaryloxy are N, S, O, P, Si, B, and the number of heteroatoms is 1-1.

[0159] In some embodiments, the interface layer comprises at least a structure layer prepared from R3-(NH2) x The prepared structure layer, wherein x≥2, R3 is selected from the group consisting of benzene ring, acenaphthene, biphenyl, carazole, acridine, indole, benzopyrrole, or benzodipyrryl.

[0160] In some embodiments, the interface layer 106 comprises at least a structure layer prepared from hexaaminobenzene. It is understood that in other embodiments, the interface layer 106 can also be a structure layer prepared from other materials. For example, the interface layer 106 can comprise a structure layer prepared from one or more of hexaaminobenzene, p-phenylenediamine, m-phenylenediamine, 1,3,5-triaminobenzene, 4,4'-diaminobiphenyl, 1,4-bis(4-aminophenoxy)benzene, 1,3,5-tris(4-aminophenoxy)benzene. In the optoelectronic device 100, the amine groups on the surface of the interface layer 106 bind to the carboxyl groups of the modifier on the surface of the quantum dot film of the light-emitting layer, so that the quantum dot film and the functional layer film such as the zinc oxide film form a close interface contact, reduce the electron quenching caused by structural defects, effectively promote the delocalization of electron cloud, and further improve the efficiency of the functional layer film in injecting electrons into the quantum dots.

[0161] In some embodiments, the material of the anode and / or the cathode comprises one or more of a metal, a carbon material, and a metal oxide, the metal comprises one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb, and Mg, the carbon material comprises one or more of graphite, carbon nanotube, graphene, and carbon fiber, and the metal oxide comprises one or more of a doped or undoped metal oxide, one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO, and AMO, or a composite electrode comprising a metal sandwiched between doped or undoped transparent metal oxides, one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2, and TiO2 / Al / TiO2.

[0162] Embodiment 1

[0163] The present embodiment provides a method for preparing an ink.

[0164] The preparation method of the ink of the present embodiment comprises the following steps:

[0165] (1) Preparation of modified quantum dot ink: 141.02 g of modifier 8-mercapto octanoic acid and 114 g of crosslinking agent N-hydroxysuccinimide were mixed in 25500 mL of the first solvent toluene to prepare the first solution, i.e. the molar ratio of the modifier 8-mercapto octanoic acid to the crosslinking agent N-hydroxysuccinimide was set to 0.8:1.

[0166] The first solution was added to 1762.8 g of cadmium sulfide quantum dot nanoparticles and stirred for 30 min to form a first dispersion.

[0167] 35.26 g of an aqueous solution containing the crosslinking agent 1,6-diaminopentane was added to the first dispersion, and stirring was continued for 3 h to form a first suspension, i.e. the total mass of the modifier in the present embodiment was controlled to be 10 wt% of the mass of the quantum dot nanoparticles.

[0168] The first suspension was centrifuged to collect the first dispersion.

[0169] The third solvent acetone and toluene were used to repeatedly wash and precipitate the first dispersion for 3 times, and the obtained 15191.4 g of the first dispersion was dispersed in 15.9 L of the second solvent n-octane to obtain the modified quantum dot ink. In the present embodiment, the total mass of the modifier was controlled to be 10 wt% of the mass of the quantum dot nanoparticles.

[0170] (2) Preparation of modified zinc oxide ink: 141.02 g of modifier 8-mercapto octanoic acid and 114 g of crosslinking agent N-hydroxysuccinimide were mixed in 25500 mL of the first solvent ethanol to prepare the first solution, i.e. the molar ratio of the modifier 8-mercapto octanoic acid to the crosslinking agent N-hydroxysuccinimide was set to 0.8:1.

[0171] The first solution was added to 1762.8 g of zinc oxide nanoparticles and stirred for 30 min to form a second dispersion.

[0172] 35.26 g of an aqueous solution containing the crosslinking agent 1,6-diaminopentane was added to the second dispersion, and stirring was continued for 3 h to form a second suspension. I.e. the total mass of the modifier in the present embodiment was controlled to be 10 wt% of the mass of the zinc oxide nanoparticles.

[0173] The second suspension was centrifuged to collect the second dispersion 1692.3 g.

[0174] After the second dispersant is washed and precipitated for 3 times by using the third solvent of acetone and ethanol, the obtained 1692.3 g of the second dispersant is dispersed in 16.9 L of the second polar solvent of ethanol to obtain the modified zinc oxide ink. In this embodiment, the total mass of the modifier is controlled to be 10 wt% of the mass of the zinc oxide nanoparticles.

[0175] Embodiment 2

[0176] The embodiment provides a preparation method of an ink.

[0177] The preparation method of the ink of the embodiment is basically the same as the preparation method of the embodiment 1, and the difference lies in that,

[0178] In the embodiment 2, when the modified quantum dot ink is prepared, the molar ratio of 8-mercaptooctanoic acid to N-hydroxysuccinimide is controlled to be 0.5:1 when the first solution is prepared.

[0179] Embodiment 3

[0180] The embodiment provides a preparation method of an ink.

[0181] The preparation method of the ink of the embodiment is basically the same as the preparation method of the embodiment 1, and the difference lies in that,

[0182] In the embodiment 3, when the modified zinc oxide ink is prepared, the molar ratio of 8-mercaptooctanoic acid to N-hydroxysuccinimide is controlled to be 0.5:1 when the first solution is prepared.

[0183] Embodiment 4

[0184] The embodiment provides a preparation method of an ink.

[0185] The preparation method of the ink of the embodiment is basically the same as the preparation method of the embodiment 1, and the difference lies in that,

[0186] In the embodiment 4, when the modified zinc oxide ink is prepared, the mass ratio of 1,6-diaminopentane to the zinc oxide ink is 5 wt%.

[0187] Embodiment 5

[0188] The embodiment provides an optoelectronic device 100 and a preparation method thereof.

[0189] Referring to Figure 3 As shown in FIG. 1, the optoelectronic device 100 is a quantum dot light emitting diode of a normal type structure, such as Figure 1As shown, the optoelectronic device 100 comprises a substrate 101, a bottom electrode 102, a hole functional layer, a light-emitting layer 105, an interface layer 106, an electron functional layer 107 and a top electrode 108 which are sequentially stacked. The bottom electrode 102 is an anode, and the top electrode 108 is a cathode. The hole functional layer 102 comprises a hole injection layer 103 and a hole transport layer 104 which are sequentially stacked. The hole injection layer 103 is closer to the bottom electrode 102 than the hole transport layer 104. The light-emitting area of the optoelectronic device 100 is 3.14 mm 2 In this embodiment, the light-emitting layer 105 is a quantum dot film prepared from modified quantum dot ink; and the electron functional layer 107 is a functional layer film prepared from modified zinc oxide ink.

[0190] The materials and thicknesses of the various layers in the optoelectronic device 10 are as follows:

[0191] The material of the bottom electrode 102 comprises ITO (indium tin oxide), and the thickness of the bottom electrode 102 is 70 nm.

[0192] The material of the hole injection layer 103 comprises PEDOT:PSS (poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid)), and the thickness of the hole injection layer 103 is 100 nm.

[0193] The material of the hole transport layer 104 comprises a polymer optoelectronic material TFB, and the thickness of the hole transport layer 104 is 39 nm.

[0194] The preparation material of the quantum dot film is modified quantum dot ink obtained by modifying quantum dots with a core-shell structure using the preparation method of Embodiment 1. The material of the core of the quantum dots with a core-shell structure is CdSe, and the material of the shell of the quantum dots is ZnS. The modified quantum dot ink contains modified quantum dot nanoparticles, and the thickness of the quantum dot film is 30 nm.

[0195] The preparation material of the interface layer 106 is hexamino benzene. The thickness of the interface layer 106 is 5 nm.

[0196] The preparation material of the functional layer film is modified zinc oxide ink obtained by modifying ZnO particles using the preparation method of Embodiment 1. The average particle size of the ZnO particles is 5 nm. The modified zinc oxide ink contains modified zinc oxide nanoparticles. The thickness of the functional layer film is 35 nm.

[0197] The material of the top electrode 108 comprises Ag, and the thickness of the top electrode 108 is 35 nm.

[0198] The preparation method of the optoelectronic device in this embodiment comprises the following steps:

[0199] S1.1 Provide a substrate 101, sputter ITO on one side of the substrate 101 to obtain an ITO layer as a bottom electrode 102 for the anode, wipe the surface of the ITO layer with a small amount of soapy water using a cotton swab to remove visible impurities, and then sequentially ultrasonically clean the substrate including ITO with deionized water for 15 min, acetone for 15 min, ethanol for 15 min, and isopropanol for 15 min, and after drying, perform ultraviolet-ozone surface treatment for 20 min to obtain a substrate 101 containing the bottom electrode 102.

[0200] S1.2 Under normal temperature and pressure air environment, spin-coat PEDOT:PSS aqueous solution on the side of bottom electrode 102 away from substrate 101, and then place it in a constant temperature heat treatment at 150℃ for 20 min to obtain hole injection layer 103.

[0201] S1.3 Under normal temperature and pressure nitrogen atmosphere, spin-coat TFB solution on the side of hole injection layer 103 away from bottom electrode 102. The solvent of TFB solution is chlorobenzene and the concentration of TFB in TFB solution is 7.5 mg / mL. Then place it in a nitrogen atmosphere at 150℃ for constant temperature heat treatment for 30 min to obtain hole transport layer 104.

[0202] S1.4 Under normal temperature and pressure nitrogen atmosphere, spin-coat modified quantum dot ink on the side of hole transport layer 104 away from hole injection layer 103, control the concentration of quantum dots in modified quantum dot ink to be 20 mg / mL, and then place it under nitrogen atmosphere at 100℃ for constant temperature heat treatment for 10 min to obtain quantum dot film as light-emitting layer 105.

[0203] S1.6 Under normal temperature and pressure nitrogen atmosphere, spin-coat a hexaaminobenzene solution on the side of the quantum dot film away from the hole transport layer 104, and then place it under nitrogen atmosphere at 100℃ for constant temperature heat treatment for 30 min to obtain the interface layer 106.

[0204] S1.6 Under a nitrogen atmosphere at room temperature and pressure, a modified zinc oxide ink is spin-coated on the side of the interface layer 106 away from the quantum dot film. The concentration of nano ZnO in the modified zinc oxide ink is 30 mg / mL. Then, it is placed under a nitrogen atmosphere at 80°C for 30 min to obtain a functional layer film as the electronic functional layer 107.

[0205] S1.7. Place the laminated structure obtained after completing step S1.6 in a vacuum with a vacuum level not exceeding 3 × 10⁻⁶. -4 In the vapor deposition chamber of Pa, Ag is thermally vapor-deposited on the side of the functional layer thin film away from the light-emitting layer 105 using a mask to obtain the top electrode 108 as the cathode. Then, it is encapsulated with acrylic resin to obtain the optoelectronic device 100. See the structural diagram of the optoelectronic device 100. Figure 3 As shown.

[0206] Example 6

[0207] The present example provides a method for preparing an optoelectronic device.

[0208] The method for preparing an optoelectronic device of the present example is basically the same as the method for preparing an optoelectronic device of Example 5, except that in Example 6, the modified quantum dot ink prepared in Example 2 is used to prepare a quantum dot film on the substrate.

[0209] Example 7

[0210] The present example provides a method for preparing an optoelectronic device.

[0211] The method for preparing an optoelectronic device of the present example is basically the same as the method for preparing an optoelectronic device of Example 5, except that in Example 7, the modified zinc oxide ink prepared in Example 3 is used to prepare a zinc oxide film on the hexaaminobenzene interface layer.

[0212] Example 8

[0213] The present example provides a method for preparing an optoelectronic device.

[0214] The method for preparing an optoelectronic device of the present example is basically the same as the method for preparing an optoelectronic device of Example 5, except that in Example 8, the modified zinc oxide ink prepared in Example 4 is used to prepare a zinc oxide film on the hexaaminobenzene interface layer.

[0215] Comparative Example 1

[0216] The present comparative example provides a method for preparing an ink.

[0217] The method for preparing an ink of the present comparative example is basically the same as the method for preparing an ink of Example 1, except that in Comparative Example 1, when preparing the modified quantum dot ink, the molar ratio of 8-mercaptooctanoic acid to N-hydroxysuccinimide in the first solvent is controlled to be 1.2:1, and the step of adding an aqueous solution containing the crosslinking agent 1,6-diaminopentane to the first dispersion liquid is omitted.

[0218] Comparative Example 2

[0219] The present comparative example provides a method for preparing an ink.

[0220] The method for preparing an ink of the present comparative example is basically the same as the method for preparing an ink of Example 1, except that in Comparative Example 2, when preparing the modified zinc oxide ink, the molar ratio of 8-mercaptooctanoic acid to N-hydroxysuccinimide is 1.2:1, and the step of adding an aqueous solution containing the crosslinking agent 1,6-diaminopentane to the second dispersion liquid is omitted.

[0221] Comparative Example 3

[0222] The present comparative example provides a preparation method of an ink.

[0223] The preparation method of the ink of the present comparative example is basically the same as the preparation method of Example 1, except that in Comparative Example 3, the molar ratio of 8-mercaptooctanoic acid to N-hydroxysuccinimide is 1.2:1 when preparing the modified quantum dot ink, and the molar ratio of 8-mercaptooctanoic acid to N-hydroxysuccinimide is 1.2:1 when preparing the modified zinc oxide ink, and the steps of adding the aqueous solution containing the crosslinking agent 1,6-diaminopentane into the first dispersion liquid and adding the aqueous solution containing the crosslinking agent 1,6-diaminopentane into the second dispersion liquid are omitted.

[0224] Comparative Example 4

[0225] The present comparative example provides a preparation method of an ink.

[0226] The preparation method of the ink of the present comparative example is basically the same as the preparation method of Example 1, except that in Comparative Example 4, the mass of the zinc oxide nanoparticles added when preparing the modified zinc oxide ink is 1469 g, i.e., the mass ratio of 1,6-diaminopentane to the zinc oxide ink is controlled to be 12 wt%.

[0227] Comparative Example 5

[0228] The present comparative example provides a preparation method of an optoelectronic device.

[0229] The preparation method of the optoelectronic device of the present comparative example is basically the same as the preparation method of Example 5, except that in Comparative Example 5, the modified quantum dot ink prepared by Comparative Example 1 is used to prepare a quantum dot film on the substrate.

[0230] Comparative Example 6

[0231] The present comparative example provides a preparation method of an optoelectronic device.

[0232] The preparation method of the optoelectronic device of the present comparative example is basically the same as the preparation method of Example 5, except that in Comparative Example 6, the modified quantum dot ink prepared by Comparative Example 2 is used to prepare a quantum dot film on the substrate.

[0233] Comparative Example 7

[0234] The present comparative example provides a preparation method of an optoelectronic device.

[0235] The preparation method of the optoelectronic device of the present comparative example is basically the same as the preparation method of Example 5, except that in Comparative Example 7, the modified zinc oxide ink prepared by Comparative Example 3 is used to prepare a zinc oxide film on the hexamino benzene interface layer.

[0236] Comparative Example 8

[0237] The present comparative example provides a preparation method of a photoelectric device.

[0238] The preparation method of the photoelectric device of the present comparative example is basically the same as the preparation method of Example 5, except that in Comparative Example 8, the modified zinc oxide ink prepared in Comparative Example 4 is used to prepare a zinc oxide film on the hexaaminobenzene interface layer.

[0239] Comparative Example 9

[0240] The present comparative example provides a preparation method of a photoelectric device.

[0241] The preparation method of the photoelectric device of the present comparative example is basically the same as the preparation method of Example 5, except that in Comparative Example 9, the modified zinc oxide ink prepared in Comparative Example 4 is used to prepare a zinc oxide film on the hexaaminobenzene interface layer. The conventional unmodified quantum dot ink and zinc oxide ink are used to prepare quantum dot film and zinc oxide film, respectively.

[0242] The photoelectric devices prepared in Examples 5-8 and Comparative Examples 5-9 are tested for performance, and the performance test results are shown in Table 1.

[0243] The test method for current efficiency is as follows: the light-emitting area is set to 2 mm x 2 mm = 4 mm 2 , the luminance value of the photoelectric device is intermittently collected in the range of 0 V to 8 V driving voltage, the initial collection voltage value is 0.5 V, and the luminance value is collected every 0.2 V, and the current efficiency of the photoelectric device under the collection condition is obtained by dividing the luminance value by the corresponding current density. Here, the current efficiency of the photoelectric device at 1000 nit luminous intensity is recorded. The test method for service life is as follows: under the driving of constant current (2 mA), the electroluminescent life analysis of each photoelectric device is carried out using a 128-channel QLED life test system, the time required for each photoelectric device to decay from maximum brightness to 95% (T95, h) is recorded, and the time required for the brightness of each photoelectric device to decay from 100% to 95% at 1000 nit luminance (T95@1000 nit, h) is calculated by decay fitting formula.

[0244] The calculation formula is as follows:

[0245] wherein T95 L is the life at low luminance, T95 H is the measured life at high luminance, L H is the highest luminance of the device, L L is 1000 nit, and A is the acceleration factor, and the value of A is 1.7.

[0246] The film uniformity test method was as follows: the above white light morphology image was processed using Vision64 Map Imaging Topography software. Specifically, the average film height of the entire pixel area was used as a reference value, and the area within ±5nm of this reference value was selected as the ideal area, i.e., the flat area of ​​the film (green). The flat area area: the ratio of the area of ​​the entire film area is the film uniformity (U%) value. The larger the value, the better the uniformity and the flatter the film. This processing was all completed using Vision64 Map Imaging Topography software.

[0247] Table 1

[0248]

[0249] In Table 1, V on (V) represents the turn-on voltage of the optoelectronic device, typically the voltage at which the luminance of the optoelectronic device is 1 cd / cm². 2 Voltage at time, V on The lower the value, the higher the efficiency of carrier injection into the light-emitting layer from the electrode / or charge functional layer in the optoelectronic device.

[0250] As shown in Table 1, the molar ratio of 8-mercaptooctanoic acid to crosslinking agent N-hydroxysuccinimide (NHS) is less than 1:1 in order to promote the deprotonation of the carboxyl groups of all the modifiers. If the molar ratio of the modifier to the crosslinking agent in the first solution is greater than 1:1 (see Comparative Examples 5, 6, and 7), some of the modifiers will fail to be deprotonated, which will affect the performance of the optoelectronic device.

[0251] In Comparative Example 8, the modified zinc oxide ink prepared in Comparative Example 4 was used to prepare a zinc oxide film on the hexaaminobenzene interface layer. Because 1,6-diaminopentane acts as a "bridge" for tandem nanoparticles, a significant deviation in the mass percentage of 1,6-diaminopentane severely affects the degree of particle tandem connection. When the mass percentage of the modifier 1,6-diaminopentane is too low, the particle tandem connection is insufficient, and the effect is comparable to the untreated state. When the mass percentage of the modifier 1,6-diaminopentane is too high, severe agglomeration occurs between particles due to excessive bonding, making it impossible to fabricate devices or resulting in devices with poor performance.

[0252] In Comparative Example 9, quantum dot films and zinc oxide films were prepared using conventional unmodified quantum dot ink and zinc oxide ink, respectively. The current efficiency, device lifetime, and film uniformity of the optoelectronic devices were all inferior to those in Examples 5-8.

[0253] In summary, the ink prepared by the preparation method of the ink can be used to prepare a photoelectric device, improve the film forming quality of a functional layer film in the photoelectric device, and improve the interface contact quality between a quantum dot nanoparticle film and a zinc oxide nanoparticle film, reduce electron quenching, improve electron injection efficiency, and further improve the performance of the photoelectric device.

[0254] In the above embodiments, the description of each embodiment has its own focus, and the parts not described in detail in a certain embodiment can be referred to the relevant description of other embodiments.

[0255] Each technical feature of the above-described embodiments can be combined arbitrarily, and in order to make the description simple, each technical feature in the above-described embodiments is not described in all possible combinations, however, as long as the combination of the technical features does not exist contradictory, it should be considered as the scope of the present application.

[0256] The above-described embodiments only express several embodiments of the present application, and the description is more specific and detailed, but it should not be understood as a limitation on the scope of the patent of the present application. It should be pointed out that for ordinary skilled in the art, without departing from the concept of the present application, a number of modifications and improvements can be made, which are within the scope of protection of the present application. Therefore, the protection scope of the patent of the present application should be subject to the appended claims.

Claims

1. A method for preparing an ink, characterized by, The method comprises the following steps: providing a first solution, nanoparticles, and a second solvent; wherein the first solution comprises a modifier, a crosslinking agent, and a first solvent; mixing the first solution with the nanoparticles to obtain a dispersion liquid; collecting the dispersed phase of the dispersion liquid; and dispersing the dispersed phase in the second solvent to obtain the ink.

2. The method of producing ink according to claim 1, characterized by, After collecting the dispersed phase of the dispersion liquid, a step of washing the dispersed phase with a third solvent is further included.

3. The method of producing ink according to claim 2, characterized by, The number of times of washing the dispersed phase with the third solvent is not less than three; and / or The third solvent comprises a polar solvent and / or a non-polar solvent; and / or The third solvent comprises one or more of methanol, acetone, ethylene glycol, DMF, acetonitrile, and chloroform.

4. The method of producing an ink according to claim 1, characterized by, A step of washing the dispersed phase is further included; preferably, when washing the dispersed phase, the first solvent is used for washing, and the number of times of washing is not less than three; and / or The amount of the modifier added is 0.1wt%-10wt% of the nanoparticles; and / or In the first solution, the molar ratio of the modifier to the crosslinking agent is controlled to be less than 1:1, and the remaining amount of the modifier is added to the dispersion liquid after obtaining the dispersion liquid, and the dispersed phase of the dispersion liquid is collected again.

5. The method of producing an ink according to any one of claims 1 to 4, characterized by, The chemical formula of the modifier is HS-R1-COOH, and / or the chemical formula of the modifier is H2N-R2-NH2; wherein R1 and R2 are each independently selected from C4-C30 hydrocarbylene or hydrocarbyloxy which is unsubstituted or substituted by amino, halogen, hydroxyl, carboxyl, ester, acyl, nitro, sulfonic acid, aldehyde, mercapto, cyano, hydrocarbyl, or hydrocarbyloxy; and / or The crosslinking agent comprises one or more of N-hydroxysuccinimide, 2-(7-azabenzotriazol-1-yl)-N,N,N',N'-tetramethyluronium hexafluorophosphate, (4,6-dimethoxy-1,3,5-triazin-2-yl)-4-methylmorpholinium chloride, benzoyl chloride, maleimide, disuccinimidyl ester, ethylene sulfone, N,N'-dicyclohexyl carbodiimide, and N-hydroxybenzotriazole; and / or The nanoparticles comprise one or more of doped or undoped metal oxides, metal sulfides, carbon-based nanoparticles, silicon-based nanoparticles, quantum dot nanoparticles, and perovskite nanoparticles.

6. The method for producing an ink according to any one of claims 1 to 4, characterized by, The first solvent is a polar solvent; and / or The second solvent is a polar solvent; and / or The first solvent comprises an alcohol containing 1-10 carbon atoms; and / or The second solvent comprises at least one of C6-C40 aliphatic hydrocarbons, C6-C30 aromatic hydrocarbons, nitrogen-containing heterocyclic compounds, and C12-C22 aromatic ethers.

7. The method of producing an ink according to any one of claims 1 to 4, characterized by, The modifier comprises one or more of 8-mercaptooctanoic acid, 9-mercaptononanoic acid, 11-mercaptoundecanoic acid, 7-mercaptoheptanoic acid, 16-mercaptohexadecanoic acid, 1,6-diaminopentane, 1,7-diaminoheptane, 1,5-diaminopentane, and 1,13-tridecanediamine; and / or The nanoparticles include one or more of zinc oxide, titanium oxide, silicon dioxide, aluminum oxide, nitrogen-doped zinc oxide, iron-doped titanium oxide, cerium-doped silicon dioxide, cadmium sulfide, zinc sulfide, lead sulfide, molybdenum sulfide, carbon nanotubes, graphene, fullerene, carbon quantum dots, pure silicon nanoparticles, silicon oxide nanoparticles, borosilicate glass nanoparticles, cadmium selenide quantum dots, cadmium sulfide quantum dots, cadmium telluride quantum dots, indium phosphide quantum dots, methylamine lead iodine perovskite, formamidinium lead iodine perovskite, inorganic cesium lead halide perovskite; and or the first solvent is selected from one or more of methanol, butanol, and propanol; and or The second solvent includes one or more of toluene, ethylbenzene, o-xylene, m-xylene, p-xylene, o-chlorotoluene, p-chlorotoluene, m-chlorotoluene, o-diethylbenzene, m-diethylbenzene, p-diethylbenzene, o-dichlorobenzene, m-dichlorobenzene, p-dichlorobenzene, mesitylene, mesitylene, tetramethylbenzene, triamylbenzene, pentyltoluene, 1-methylnaphthalene, dihexylbenzene, butylbenzene, sec-butylbenzene, tert-butylbenzene, isobutylbenzene, dibutylbenzene, isopropylbenzene, p-methylisopropylbenzene, p-diisopropylbenzene, pentylbenzene, di-pentylbenzene, dodecylbenzene, tetrahydronaphthalene, cyclohexylbenzene, 1,3,5-trimethylbenzene, 1-chloronaphthalene, 1-tetrahydronaphthalenone, 3-phenoxytoluene, 1-methoxynaphthalene, dimethylnaphthalene, 3-isopropylbiphenyl, 1,2,4-trimethylbenzene, biphenyl, benzyl benzoate, dibenzyl ether, indene, benzylbenzene, divinylbenzene, indane, or epoxyphenyl, n-hexane, cyclohexane, octane, nonane, decane, undecane, dodecane, tridecane, tetradecane, pentadecane, and hexadecane.

8. Ink, characterized in that The ink is prepared by the preparation method of any one of claims 1-7.

9. A method of fabricating an optoelectronic device, characterized by, The method comprises the following steps: providing a substrate; preparing a first ink by the preparation method of any one of claims 1-7; disposing the first ink on the substrate, annealing to form a light-emitting layer; preparing a second ink by the preparation method of any one of claims 1-7, disposing the second ink on the light-emitting layer, annealing to form an electronic functional layer; and preparing an electrode on the electronic functional layer to obtain the optoelectronic device.

10. The method of producing an optoelectronic device according to claim 9, wherein The preparation method of the optoelectronic device further satisfies at least one of the following conditions: (1) after the light-emitting layer is formed, a step of modifying the light-emitting layer with a modifier is further included; (2) during the annealing process, baking at a temperature of 60-80°C for at least 10 min; (3) after the light-emitting layer is formed, a step of preparing an interface layer on the light-emitting layer is further included; (4) The preparation material for preparing the interface layer on the light-emitting layer comprises R3-(NH2) x , x > 2, R3 is selected from benzene ring, acene, biphenyl, carazole, acridine, indole, benzopyrrole or benzodipyrryl; (5) the polarity of the first solvent used in preparing the second ink is different from that of the first solvent used in preparing the first ink; (6) the first ink is an ink containing quantum dot modified nanoparticles; (7) the second ink includes zinc oxide ink.

11. The method of fabricating an optoelectronic device according to claim 10, wherein, The preparation method of the optoelectronic device further satisfies at least one of the following conditions: (1) when the light-emitting layer is modified with a modifier, the light-emitting layer is immersed in the modifier for at least 30 min; (2) the preparation material of the interface layer comprises one or more of hexaaminobenzene, p-phenylenediamine, m-phenylenediamine, 1,3,5-triaminobenzene, 4,4'-diaminobiphenyl, 1,4-bis(4-aminophenoxy)benzene, and 1,3,5-tris(4-aminophenoxy)benzene; (3) the thickness of the interface layer is controlled to be 1 nm to 20 nm.

12. The method of producing an optoelectronic device according to claim 10 or 11, characterized in that, The preparation method of the photoelectric device further satisfies at least one of the following conditions: (1) when the first ink is disposed on the substrate, an inkjet printing process is adopted; (2) when the second ink is disposed on the light-emitting layer, an inkjet printing process is adopted; (3) the thickness of the light-emitting layer is controlled to be 20 nm to 100 nm; (4) the thickness of the electron functional layer film is controlled to be 20 nm to 100 nm.

13. An optoelectronic device, characterized in that The photoelectric device is prepared by the preparation method according to any one of claims 9 to 12.

14. The optoelectronic device of claim 13, wherein, The photoelectric device comprises an anode, a hole functional layer, a light-emitting layer, an interface layer, an electron functional layer, and a cathode which are sequentially stacked.

15. The optoelectronic device of claim 14, wherein, The photoelectric device further satisfies at least one of the following conditions: (1) the light-emitting layer is a perovskite quantum dot light-emitting layer, a quantum dot light-emitting layer, or an organic light-emitting layer; Preferably, the perovskite quantum dots comprise doped or non-doped inorganic perovskite semiconductors, or organic-inorganic hybrid perovskite semiconductors, the inorganic perovskite semiconductors having a general structure of AMX3, wherein A is cesium, M comprises one or more of lead, tin, copper, nickel, cadmium, cadmium, manganese, cobalt, iron, chromium, ytterbium, europium, and X is halogen, comprising one or more of chlorine, bromine, iodine, and the organic-inorganic hybrid perovskite semiconductors having a general structure of BM’X’3, wherein B comprises CH3(CH2) n-2 NH3or [NH3(CH2) n NH3] with n > 2, M’ comprises one or more of lead, tin, copper, nickel, cadmium, cadmium, manganese, cobalt, iron, chromium, ytterbium, europium, and X’ is halogen, comprising one or more of chlorine, bromine, iodine; and / or The material of the quantum dot light-emitting layer comprises at least one of single-structure quantum dots and core-shell structure quantum dots, and the material of the single-structure quantum dots is selected from at least one of II-VI compounds, IV-VI compounds, III-V compounds and I-III-VI compounds, wherein the II-VI compounds are selected from at least one of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe, the IV-VI compounds are selected from at least one of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe and SnPbSTe, the III-V compounds are selected from at least one of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs or InAlPSb, and the I-III-VI compounds are selected from at least one of CuInS2, CuInSe2 and AgInS2; and / or The material of the organic light-emitting layer comprises at least one of 4,4'-bis(N-carbazole)-1,1'-biphenyl: tris[2-(p-tolyl)pyridine-C2,N) iridium(III), 4,4',4"-tris(carbazole-9-yl) triphenylamine: tris[2-(p-tolyl)pyridine-C2,N) iridium, diaromatic anthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, and DBP fluorescent materials, polyacetylene and its derivatives, poly-p-phenylene and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives; (2) The electronic functional layer comprises an electron transport layer and / or an electron injection layer; Preferably, the material of the electron transport layer and / or the electron injection layer comprises inorganic material and / or organic material; the inorganic material is selected from one or more of doped or non-doped zinc oxide, barium oxide, aluminum oxide, nickel oxide, titanium oxide, tin oxide, tantalum oxide, zirconium oxide, nickel oxide, lithium titanium oxide, zinc aluminum oxide, zinc manganese oxide, zinc tin oxide, zinc lithium oxide, indium tin oxide, cadmium sulfide, zinc sulfide, molybdenum sulfide, tungsten sulfide, copper sulfide, zinc stannate, indium phosphide, gallium phosphide, copper indium sulfide, copper gallium sulfide, barium titanate, and the doping elements include one or more of aluminum, magnesium, lithium, manganese, yttrium, lanthanum, copper, nickel, zirconium, cerium, gadolinium; the organic material is selected from one or more of quinoxaline compounds, imidazole compounds, triazine compounds, fluorene-containing compounds, hydroxyquinoline compounds; (3) The hole functional layer comprises a hole injection layer and / or a hole transport layer; Preferably, the material of the hole transport layer and / or the hole injection layer comprises at least one of TFB, CuPc, PVK, Poly-TPD, DNTPD, TCATA, TCCA, CBP, TPD, NPB, NPD, PEDOT:PSS, TAPC, MCC, F4-TCNQ, HATCN, 4,4',4'-tris(N-3-methylphenyl-N phenyl amino) triphenylamine, polyaniline, transition metal oxide, transition metal sulfide, transition metal stannate, doped graphene, non-doped graphene, and C60. (4) the interface layer comprises at least R3-(NH2) x The prepared structure layer, wherein x≥2, R3is selected from one or a combination of the following: aryl with ring atom number of 6-60, heteroaryl with ring atom number of 5-60, aryloxy with ring atom number of 6-60, and heteroaryloxy with ring atom number of 5-60, wherein the heteroatom in the heteroaryl or heteroaryloxy is N, S, O, P, Si, B, and the number of heteroatoms is 1-10; (5) the material of the anode and / or the cathode comprises one or more of metal, carbon material and metal oxide, the metal comprises one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb and Mg; the carbon material comprises one or more of graphite, carbon nanotube, graphene and carbon fiber; the metal oxide comprises doped or undoped metal oxide, comprises one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO and AMO, or comprises a composite electrode with metal sandwiched between doped or undoped transparent metal oxide, comprises one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2 and TiO2 / Al / TiO2.

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