Ignition device and semiconductor process equipment

Abstract

The invention discloses an ignition device and semiconductor process equipment, and relates to the technical field of semiconductors. The ignition device comprises an ignition cavity, a first gas inlet pipeline and a second gas inlet pipeline, the first gas inlet pipeline and the second gas inlet pipeline are communicated with the ignition cavity, the second gas inlet pipeline is arranged outside the first gas inlet pipeline in a sleeving mode, the first gas inlet pipeline is used for conveying first gas, and the second gas inlet pipeline is used for conveying second gas; the ignition chamber comprises a combustion chamber and a sweeping gas inlet, the sweeping gas inlet, the first gas inlet pipeline and the second gas inlet pipeline are all communicated with the combustion chamber, the inner surface of the combustion chamber is an arc-shaped concave surface, and the arc-shaped concave surface is sunken in the direction away from the central axis of the ignition chamber. According to the scheme, the problem that blowing blind points exist in an existing ignition device can be solved.

Description

TECHNICAL FIELD

[0001] The present application belongs to the technical field of semiconductor, and particularly relates to an ignition device and a semiconductor process equipment. BACKGROUND

[0002] In the field of semiconductor, an oxide film can be formed on a wafer by using an oxidation reaction. According to the gas used in the oxidation reaction, the thermal oxidation method can be divided into dry oxidation, wet oxidation and radical oxidation. Among them, the wet oxidation adopts the way of reacting oxygen, high-temperature water vapor (water) and wafer to generate an oxide film.

[0003] When wet oxidation reaction is needed to generate an oxide film on the surface of the wafer, the gas in the ignition chamber of the ignition device is first discharged by purging, and then high-temperature hydrogen and oxygen are introduced into the ignition chamber. The two meet in the ignition chamber to perform hydrogen-oxygen combustion, thereby generating high-temperature water vapor. At this time, the high-temperature water vapor is introduced into the process chamber to perform wet oxidation reaction (referred to as wet oxygen reaction). However, the current ignition chamber has a purging blind spot during purging, which leads to safety problems during ignition.

[0004] Of course, the ignition device also has the above problems when used to ignite other gases. SUMMARY

[0005] The purpose of the embodiments of the present application is to provide an ignition device and a semiconductor process equipment, which can solve the problem of purging blind spot in the current ignition device.

[0006] In order to solve the above technical problems, the present application is implemented as follows:

[0007] In a first aspect, the embodiments of the present application provide an ignition device, comprising an ignition chamber, and a first gas inlet pipe and a second gas inlet pipe in communication with the ignition chamber, the second gas inlet pipe is sleeved outside the first gas inlet pipe, the first gas inlet pipe is used for conveying a first gas, and the second gas inlet pipe is used for conveying a second gas.

[0008] The ignition chamber comprises a combustion chamber and a purge gas inlet, the purge gas inlet, the first gas inlet pipe and the second gas inlet pipe are in communication with the combustion chamber, the inner surface of the combustion chamber is an arc-shaped concave surface, and the arc-shaped concave surface is recessed in a direction away from the central axis of the ignition chamber.

[0009] In a second aspect, the embodiments of the present application provide a semiconductor process equipment, comprising a semiconductor process chamber and the above-mentioned ignition device, the ignition chamber of the ignition device is in communication with the semiconductor process chamber.

[0010] In the embodiment of the present application, the ignition chamber is provided with a purge gas inlet, the inner surface of the combustion chamber of the ignition chamber is an arc-shaped concave surface, the arc-shaped concave surface is recessed in the direction away from the central axis of the ignition chamber, and when the first gas inlet pipe and the second gas inlet pipe are both closed, the purge gas inlet can introduce purge gas into the ignition chamber to discharge the gas in the ignition chamber. In this scheme, since the inner surface of the combustion chamber is an arc-shaped concave surface, the curvature changes little, which can prevent the occurrence of a purge blind spot, and is beneficial to the complete discharge of the gas in the ignition chamber by the purge gas, thereby improving the safety of the ignition chamber to prevent safety problems in the subsequent ignition process. BRIEF DESCRIPTION OF DRAWINGS

[0011] Figure 1 Structure schematic diagram of the ignition device disclosed in the embodiment of the present application;

[0012] Figure 2 Structure design schematic diagram of the ignition device disclosed in the embodiment of the present application;

[0013] Figure 3 Structure schematic diagram of the ignition device disclosed in the embodiment of the present application in the purge stage, wherein arrow A is the purge gas;

[0014] Figure 4 Structure schematic diagram of the ignition device disclosed in the embodiment of the present application in the wet oxygen reaction starting stage, wherein arrow B is the first gas, and arrow C is the second gas;

[0015] Figure 5 Structure schematic diagram of the ignition device disclosed in the embodiment of the present application in the wet oxygen reaction sufficient stage, wherein arrow B is the first gas, arrow C is the second gas, and arrow D is the firelight;

[0016] Figure 6 Structure schematic diagram of the ignition device disclosed in the embodiment of the present application in the wet oxygen reaction abnormal stage, wherein arrow B is the first gas, arrow C is the second gas, and arrow D is the firelight;

[0017] Figure 7 Structure schematic diagram of the semiconductor process equipment disclosed in the embodiment of the present application.

[0018] BRIEF DESCRIPTION OF DRAWINGS

[0019] 100-ignition chamber, 110-purge gas inlet, 120-gas inlet end, 130-combustion chamber, 131-combustion zone, 132-stable zone, 140-gas outlet end, 150-gas outlet, 160-gas inlet pipe section, 170-gas outlet pipe section, 171-connection flange, 180-gas inlet connection pipe;

[0020] 200-first gas inlet pipe;

[0021] 300 - second intake duct, 310 - first pipe section, 320 - second pipe section;

[0022] 400 - reflective layer;

[0023] 500 - heating element;

[0024] 600 - semiconductor process chamber, 610 - chamber body, 620 - connecting line. DETAILED DESCRIPTION

[0025] The technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, rather than all the embodiments of the present application. Based on the embodiments in the present application, all the other embodiments obtained by those of ordinary skill in the art without creative work fall within the scope of protection of the present application.

[0026] The terms "first", "second", and the like in the specification and claims of the present application are used to distinguish similar objects, and are not used to describe a specific order or sequence. It should be understood that the data used in this way can be exchanged under appropriate circumstances, so that the embodiments of the present application can be implemented in an order other than those illustrated or described herein, and the objects distinguished by "first", "second", etc. are generally a category, and do not limit the number of objects, for example, the first object can be one or more. In addition, "and / or" in the specification and claims indicates at least one of the connected objects, and the character " / ", generally indicates that the front and rear associated objects are in an "or" relationship.

[0027] The ignition device and semiconductor process equipment provided by the embodiments of the present application will be described in detail below with reference to the drawings and specific embodiments and application scenarios.

[0028] As Figures 1 to 6As shown, the embodiment of the present application discloses a kind of ignition device, which comprises ignition chamber 100 and first gas inlet pipe 200 and second gas inlet pipe 300 communicated with ignition chamber 100, optionally, ignition chamber 100 can be made of refractory material, to improve the service life of ignition chamber 100.First gas inlet pipe 200 is used to transport first gas, and second gas inlet pipe 300 is used to transport second gas, so that first gas and second gas both enter ignition chamber 100, and meet and burn in ignition chamber 100. Optionally, one of first gas and second gas can be oxygen, and the other can be hydrogen, of course, it can also be other combustible gas, and the embodiment of the present application does not make specific limitation to this. Second gas inlet pipe 300 is sleeved outside first gas inlet pipe 200, i.e. annular space formed between inner surface of second gas inlet pipe 300 and outer surface of first gas inlet pipe 200 is used to transport second gas. Optionally, second gas inlet pipe 300 comprises first pipe section 310 and second pipe section 320 communicated with each other, first pipe section 310 is sleeved outside first gas inlet pipe 200, and central axis of second pipe section 320 is perpendicular to central axis of first pipe section 310. By using second gas inlet pipe 300 with such structure, second gas inlet pipe 300 can be conveniently connected with second gas source. Optionally, central axis of first pipe section 310 coincides with central axis of first gas inlet pipe 200, so that the distribution of second gas in annular space is more uniform. Optionally, the width of second pipe section 320 can be smaller than the width of first pipe section 310, which can save the material for manufacturing second gas inlet pipe 300.

[0029] Ignition chamber 100 comprises combustion chamber 130 and purge gas inlet 110, optionally, purge gas inlet 110 can be opened at any position of gas inlet end, gas outlet end or the like of ignition chamber 100, and the embodiment of the present application does not make specific limitation to this. Purge gas inlet 110, first gas inlet pipe 200 and second gas inlet pipe 300 are all communicated with ignition chamber 100, and the inner surface of combustion chamber 130 of ignition chamber 100 is arc concave surface, which is concave along the direction away from central axis of ignition chamber 100. In the case that ignition device is in first state, first gas inlet pipe 200 and second gas inlet pipe 300 are both closed, and purge gas inlet 110 is used to introduce purge gas into ignition chamber 100. Specifically, when ignition device is in first state, and purge gas inlet 110 introduces purge gas into ignition chamber 100, the purge gas can drive out the gas previously existing in ignition chamber 100, until ignition chamber 100 is filled with purge gas. Optionally, the purge gas can be first gas or second gas, of course, it can also be other gas, and the embodiment of the present application does not make specific limitation to this.

[0030] In the embodiment of the present application, since the inner surface of the combustion chamber 130 of the ignition chamber 100 is an arc-shaped concave surface with a small variation in curvature, the blowout blind spot can be prevented, and the gas in the ignition chamber 100 can be completely discharged by the purge gas, thereby improving the safety of the ignition chamber 100 to prevent safety problems in the subsequent ignition process. Therefore, the embodiment of the present application can solve the problem of the blowout blind spot of the existing ignition device.

[0031] In an optional embodiment, the ignition chamber 100 has an exhaust end 140 and a gas inlet end 120 arranged opposite to each other, the exhaust end 140 and the gas inlet end 120 are both in communication with the combustion chamber 130, the first gas inlet pipeline 200 and the second gas inlet pipeline 300 are both arranged at the gas inlet end 120, and in the extension direction of the gas inlet end 120 to the exhaust end 140, the flow area of the combustion chamber 130 gradually increases and then gradually decreases to form a flame-like structure. When the first gas and the second gas are contacted and combusted to generate a flame in the ignition chamber 100, the combustion chamber 130 provides space for the flame, and the shape of the combustion chamber 130 is adapted to the shape of the flame, so that the distance between the outer flame of the flame and the inner wall of the combustion chamber 130 is substantially consistent, thereby making the inner wall of the combustion chamber 130 be heated more uniformly, and further improving the service life of the combustion chamber 130. Of course, the curvature radius of the part of the arc-shaped concave surface close to the gas inlet end 120 can also be greater than or equal to the curvature radius of the part of the arc-shaped concave surface away from the gas inlet end 120; the flow area of the combustion chamber 130 in the extension direction of the gas inlet end 120 to the exhaust end 140 can also only gradually decrease, that is, the combustion chamber 130 has a conical structure.

[0032] It should be noted that in the process of manufacturing the ignition chamber 100, the actual flame shape can be selected, and the embodiment of the present application does not make specific limitations.

[0033] In another alternative embodiment, the ignition chamber 100 has an exhaust end 140 and an intake end 120 arranged opposite to each other, and both of the exhaust end 140 and the intake end 120 are in communication with the combustion chamber 130. Optionally, the purge gas inlet 110 can be arranged at the exhaust end of the ignition chamber 100, and in this case, an exhaust hole needs to be arranged at the intake end, so that in the case where the ignition device is in the first state, the exhaust hole and the purge gas inlet 110 form an airflow channel, thereby discharging the gas previously existing in the ignition chamber 100 from the exhaust hole, avoiding the backflow of the gas, and thereby improving the purging efficiency. Based on this, in other alternative embodiments, the purge gas inlet 110 is arranged at the intake end 120, and the purge gas inlet 110 is also used to introduce the second gas into the ignition chamber 100; the exhaust end 140 is provided with an exhaust port 150, and the exhaust port 150 is used to discharge the first gas, the second gas and / or the purge gas in the ignition chamber 100. In the case where the ignition device is in the first state, the exhaust port 150 and the purge gas inlet 110 form an airflow channel, thereby discharging the gas previously existing in the ignition chamber 100 from the exhaust port 150. In this process, the exhaust port 150 is used to discharge the mixed gas of the purge gas and the original gas in the ignition chamber 100, until the original gas is completely discharged, so that the entire ignition chamber 100 is filled with the purge gas. This can avoid the need to additionally arrange an exhaust hole at the intake end of the ignition chamber 100, thereby reducing the manufacturing difficulty of the ignition chamber 100, and at the same time, improving the sealing performance of the ignition chamber 100; in the case where the ignition device is in the second state, both the first intake pipeline 200 and the second intake pipeline 300 are opened, and the purge gas inlet 110 is used to introduce the second gas into the ignition chamber 100, and the second gas can be fully combusted with the excess first gas in the ignition chamber 100, thereby avoiding the excess first gas from entering the semiconductor process chamber, and thereby improving the utilization rate of the first gas. In this process, the exhaust port 150 is used to discharge the mixed gas of the gas (such as water vapor) generated by the combustion of the first gas and the second gas in the ignition chamber 100 and the excess second gas, and of course, the mixed gas will inevitably be mixed with a small amount of the first gas.

[0034] In an alternative embodiment, the ignition chamber 100 further comprises an air inlet pipe section 160 coaxially arranged with and communicated with the combustion chamber 130, the air inlet pipe section 160 being the air inlet end 120 described above, and the air inlet pipe section 160 and the combustion chamber 130 can be integrally formed, which not only facilitates installation but also provides better sealing. The combustion chamber 130 is formed with a combustion zone 131 and a stabilization zone 132 in communication, the stabilization zone 132 surrounding the combustion zone 131, i.e. the stabilization zone 132 being located between the inner surface of the combustion chamber 130 and the combustion zone 131, the purge gas inlet 110 being formed in the combustion chamber 130 or the purge gas inlet 110 being formed in the air inlet pipe section 160, at least a portion of the second air inlet pipe 300 extending into the air inlet pipe section 160, an annular passage being formed between the outer surface of the second air inlet pipe 300 and the inner surface of the air inlet pipe section 160, the annular passage facing the stabilization zone 132, and the exhaust end of the first air inlet pipe 200 facing the combustion zone 131. When the ignition device is in the first state, the purge gas inlet 110 introduces purge gas into the ignition chamber 100, and the purge gas can directly flow to the inner surface of the ignition chamber 100, which is conducive to improving the purging efficiency; when the ignition device is in the second state, the second gas introduced into the annular passage through the purge gas inlet 110 flows to the stabilization zone 132, the second gas surrounding the flame, which not only can fully burn with the excess first gas but also forms a stable annular protective gas flow between the flame and the inner surface of the combustion chamber 130 to ensure that the distance between the outer flame of the flame and the inner surface of the combustion chamber 130 is substantially uniform, and the annular protective gas flow has a buffering effect, which can avoid the flame from colliding with the inner surface of the combustion chamber 130 when the flame fluctuates, thereby protecting the combustion chamber 130 to prolong the service life of the combustion chamber 130; in addition, the second gas introduced through the purge gas inlet 110 can be preheated in the annular passage when the ignition chamber 100 has such a structure, so as to reduce the temperature difference between the second gas and the combustion chamber 130, thereby improving the combustion stability of the flame in the combustion chamber 130. Of course, the air inlet pipe section 160 can not be provided in the above embodiment.

[0035] It should be noted that the connection between the combustion chamber 130 and the air inlet pipe section 160 is in the form of a circular arc to serve as a transition, so that the second gas in the annular passage gradually flows to the combustion chamber 130, thereby improving the flow stability of the second gas.

[0036] Optionally, the ignition chamber 100 further comprises an air inlet connecting pipe 180, one end of the air inlet connecting pipe 180 being in communication with the purge gas inlet 110, and the central axis of the air inlet connecting pipe 180 being perpendicular to the central axis of the exhaust pipe section 170.

[0037] In a further optional embodiment, the ignition device further comprises a light-reflecting layer 400 arranged on the surface of the combustion chamber 130, the light-reflecting layer 400 is configured to reflect part of the light to converge to the combustion area 131, so as to realize energy convergence and avoid the first gas and the second gas from jumping during the combustion process, thereby improving the safety of the ignition chamber 100, which is beneficial to prolong the service life of the ignition chamber 100. Of course, the light-reflecting layer 400 can not be arranged, and the inner surface of the combustion chamber 130 can be directly used for energy convergence, but the reflectivity of the inner surface of the combustion chamber 130 is relatively low.

[0038] Optionally, the light-reflecting layer 400 can be arranged on the inner surface of the combustion chamber 130; or in another embodiment, the combustion chamber 130 is a light-transmitting structure, which can be made of silica, and of course can be made of other light-transmitting structures, and the embodiments of the present application do not make specific limitations on this. The light-reflecting layer 400 is arranged around the outer surface of the combustion chamber 130, and the light-reflecting layer 400 extends from one end of the combustion chamber 130 to the other end of the combustion chamber 130, that is, the light-reflecting layer 400 covers the entire outer surface of the combustion chamber 130, so as to improve the light-reflecting efficiency of the light-reflecting layer 400. The light emitted by the flame passes through the combustion chamber 130 and irradiates to the light-reflecting layer 400, and is reflected to the combustion area 131 through the light-reflecting layer 400, so as to realize energy convergence. In this scheme, the light-reflecting layer 400 is arranged around the outer surface of the combustion chamber 130, which not only can save the internal space of the combustion chamber 130, but also facilitates the replacement of the light-reflecting layer 400 after being damaged.

[0039] In yet another optional embodiment, at least part of the first gas inlet pipeline 200 extends into the gas inlet pipeline section 160, and the first distance between the exhaust end of the first gas inlet pipeline 200 and the combustion area 131 is greater than the second distance between the exhaust end of the second gas inlet pipeline 300 and the combustion area 131. At the exhaust port of the first gas inlet pipeline 200, the second gas meets the first gas and burns, at this time, the part of the pipeline of the second gas inlet pipeline 300 extending relative to the first gas inlet pipeline 200 can provide a combustion space, and at the same time, the part of the pipeline can converge the first gas and the second gas, so as to make them burn sufficiently. Of course, the first distance in the above-mentioned embodiment can also be equal to or less than the second distance.

[0040] Optionally, the first gas and the second gas can be heated first, and then introduced into the combustion chamber 130 through the first intake pipe 200 and the second intake pipe 300; or, in other embodiments, the ignition device further includes a heating element 500, which is sleeved on the intake pipe section 160. That is, the first gas and the second gas are heated when they flow through the first intake pipe 200 and the second intake pipe 300 respectively and are about to enter the combustion chamber 130. This can avoid damage to the first intake pipe 200 and the second intake pipe 300 by high-temperature gas, thereby extending their service life.

[0041] Optionally, the purge gas inlet 110 is connected to the aforementioned annular channel and is located on the side of the heating element 500 away from the combustion chamber 130. When the ignition device is in the second state, the second gas introduced through the purge gas inlet 110 is heated in the annular channel before entering the combustion chamber 130, thereby reducing the temperature difference between the second gas and the combustion chamber 130, and thus improving the combustion stability of the flame. Of course, the purge gas inlet 110 can also be located on the side of the heating element 500 closer to the combustion chamber 130.

[0042] In another optional embodiment, the flow area of ​​the exhaust port 150 can be greater than or equal to the flow area of ​​the intake pipe section 160; or, the flow area of ​​the exhaust port 150 can be smaller than the flow area of ​​the intake pipe section 160. Since at least a portion of the second intake pipe 300 extends into the intake pipe section 160 and is fitted outside the first intake pipe 200, when the flow area of ​​the exhaust port 150 is smaller than the flow area of ​​the intake pipe section 160, this facilitates the arrangement of the first intake pipe 200 and the second intake pipe 300. At the same time, since the flow area of ​​the exhaust port 150 is smaller, the gas pressure in the ignition chamber 100 can be increased, thereby ensuring complete combustion of the first gas and the second gas.

[0043] Optionally, the exhaust port 150 can be directly located in the combustion chamber 130; or, in other embodiments, the ignition chamber 100 further includes an exhaust pipe section 170, which is the exhaust end 140 mentioned above. The intake pipe section 160, the combustion chamber 130, and the exhaust pipe section 170 are connected in sequence. The exhaust pipe section 170 is provided with an exhaust port 150, that is, the end of the exhaust pipe section 170 away from the combustion chamber 130 is the exhaust port 150. This solution facilitates the connection of the ignition device with other structures (such as semiconductor process chambers) by setting the exhaust pipe section 170; and allows the high-temperature water vapor generated in the combustion chamber 130 to be stabilized in the exhaust pipe section 170 before entering the semiconductor process chamber to participate in the process reaction.

[0044] Based on the ignition device disclosed in this application, taking hydrogen as the first gas and oxygen as the second gas as an example, the working principle of the ignition device is as follows:

[0045] Purge phase: Close the first air intake pipe 200 and the second air intake pipe 300, and open the purge gas inlet 110 of the ignition chamber 100 to put the ignition device in the first state. At this time, purge gas is introduced into the ignition chamber 100 through the purge gas inlet 110. The purge gas can be oxygen, thereby venting the existing gas (such as nitrogen) in the ignition chamber 100 and filling the entire ignition chamber 100 with oxygen.

[0046] In the initial stage of the wet oxygen reaction: The purge gas inlet 110 of the ignition chamber 100 remains open, allowing oxygen to be introduced into the ignition chamber 100 at a low flow rate to maintain the oxygen environment in the stable zone 132. The heating element 500 is then activated, raising its temperature above the ignition temperature of hydrogen and oxygen. The first intake pipe 200 and the second intake pipe 300 are then opened, heating the oxygen and hydrogen above their ignition temperature. When the oxygen and hydrogen meet in the combustion chamber 130, combustion occurs, producing an oxyhydrogen flame, thus placing the ignition device in its second state. During this stage, both oxygen and hydrogen flow rates are low, ensuring sufficient reaction between the oxygen in the combustion zone 131 and the excess hydrogen, guaranteeing an ideal mixture of water vapor and oxygen near the exhaust port 150.

[0047] During the wet-oxygen reaction stage: the flow rates of oxygen and hydrogen are increased, and the flow rates of oxygen and hydrogen delivered to the combustion zone 131 are also increased accordingly. Since the combustion chamber 130 is a rotating structure, and in conjunction with the reflective layer 400 on the outer surface of the combustion chamber 130, the reflection and concentration of the hydrogen-oxygen flame light can be achieved, converging the light of each segment of the rotating curved surface onto the central axis of the hydrogen-oxygen flame, thereby achieving the re-concentration of combustion energy on the central axis to ensure that the central axis of the combustion zone 131 maintains the highest combustion state and ensures the stability of the hydrogen-oxygen flame combustion. At the same time, all positions inside the combustion chamber 130 are filled with oxygen, and the hydrogen that has not been fully combusted at the exhaust end of the first intake pipe 200 can be fully combusted when it passes through the central axis of the combustion zone 131, thereby preventing deflagration.

[0048] Abnormal stage of wet oxygen reaction: When the hydrogen flow rate fluctuates briefly, i.e. when the flow is interrupted, the hydrogen-oxygen flame will also be interrupted briefly. At this time, there is a delayed combustion effect. The combustion energy can be reflected again to the central axis of the hydrogen-oxygen flame through the reflective layer 400. When the interrupted hydrogen enters the combustion zone 131 again from the exhaust end of the first intake pipe 200, the hydrogen re-entering the combustion zone 131 can burn quickly because the central axis of the hydrogen-oxygen flame is still in a high energy state. In addition, the temperature difference between the hydrogen re-entering the combustion zone 131 and the combustion zone 131 is small, which can avoid sudden deflagration and affect the service life of the ignition chamber 100.

[0049] It should be noted that the ignition device disclosed in this application embodiment may not have a purge gas inlet 110. When the purge gas inlet 110 is not opened, oxygen is only supplied through the second air intake pipe 300. That is, during the purging stage, oxygen is introduced into the ignition chamber 100 through the second air intake pipe 300 for purging. However, when the ignition device is in the second state, the oxygen supplied by the second air intake pipe 300 may fluctuate, which may cause fluctuations in the hydrogen-oxygen flame or incomplete hydrogen combustion and other abnormalities. However, the incomplete hydrogen combustion can be avoided under the reflective and converging effect of the reflective layer 400.

[0050] When hydrogen cannot be supplied or the wet oxygen reaction ends, shut off the heating element 500, the purge gas inlet 110, the first air inlet pipe 200, and the second air inlet pipe 300.

[0051] like Figure 7 As shown, based on the ignition device disclosed in this application, this application embodiment also provides a semiconductor process apparatus, which includes a semiconductor process chamber 600 and the ignition device described in any of the above embodiments, wherein the ignition chamber 100 of the ignition device is connected to the semiconductor process chamber 600.

[0052] Optionally, the semiconductor process chamber 600 includes a connected chamber body 610 and a connecting pipe 620. The connecting pipe 620 is located on one side of the chamber body 610, and the connecting pipe 620 and the chamber body 610 can be an integral structure. The connecting pipe 620 and the exhaust pipe section 170 of the ignition device can be connected through a flange to connect the ignition chamber 100 and the chamber body 610. Optionally, the exhaust pipe section 170 has a connecting flange 171, and the exhaust pipe section 170 is connected to the connecting pipe 620 through the connecting flange 171.

[0053] Optionally, taking hydrogen as the first gas and oxygen as the second gas as an example, hydrogen and oxygen undergo hydrogen-oxygen combustion in the ignition chamber 100 to generate high-temperature water vapor. The mixture formed by the high-temperature water vapor and oxygen enters the chamber body 610 through the connecting pipe 620, and then reacts with the wafer to generate an oxide film.

[0054] The embodiments of this application have been described above with reference to the accompanying drawings. However, this application is not limited to the specific embodiments described above. The specific embodiments described above are merely illustrative and not restrictive. Those skilled in the art can make many other forms under the guidance of this application without departing from the spirit and scope of the claims, and all of these forms are within the protection scope of this application.

Claims

1. An ignition device, characterized in that, It includes an ignition chamber (100) and a first air intake pipe (200) and a second air intake pipe (300) connected to the ignition chamber (100). The second air intake pipe (300) is sleeved outside the first air intake pipe (200). The first air intake pipe (200) is used to transport a first gas, and the second air intake pipe (300) is used to transport a second gas. The ignition chamber (100) includes a combustion chamber (130) and a purge gas inlet (110). The purge gas inlet (110), the first intake pipe (200), and the second intake pipe (300) are all connected to the combustion chamber (130). The inner surface of the combustion chamber (130) is an arc-shaped concave surface, which is recessed along a direction away from the central axis of the ignition chamber (100).

2. The ignition device according to claim 1, characterized in that, The ignition chamber (100) has an exhaust end (140) and an intake end (120) arranged opposite to each other. Both the exhaust end (140) and the intake end (120) are connected to the combustion chamber (130). The first intake pipe (200) and the second intake pipe (300) are both arranged at the intake end (120). In the direction of extension from the intake end (120) to the exhaust end (140), the flow area of ​​the combustion chamber (130) first gradually increases and then gradually decreases.

3. The ignition device according to claim 1, characterized in that, The ignition chamber (100) has an exhaust end (140) and an intake end (120) arranged opposite to each other, and both the exhaust end (140) and the intake end (120) are connected to the combustion chamber (130). The purge gas inlet (110) is disposed at the air inlet end (120), and the purge gas inlet (110) is also used to introduce the second gas into the ignition chamber (100); The exhaust end (140) is provided with an exhaust port (150), which is used to discharge the first gas, the second gas and / or the purge gas in the ignition chamber (100).

4. The ignition device according to claim 3, characterized in that, The ignition chamber (100) further includes an intake pipe section (160), which is coaxially arranged and connected to the combustion chamber (130). The combustion chamber (130) forms a combustion zone (131) and a stabilization zone (132) that are connected to each other. The stabilization zone (132) surrounds the combustion zone (131). The purge gas inlet (110) is opened in the intake pipe section (160). At least a portion of the second intake pipe (300) extends into the intake pipe section (160). An annular channel is formed between the outer surface of the second intake pipe (300) and the inner surface of the intake pipe section (160). The annular channel faces the stabilization zone (132). The exhaust end of the first intake pipe (200) faces the combustion zone (131).

5. The ignition device according to claim 4, characterized in that, The ignition device further includes a reflective layer (400) disposed on the surface of the combustion chamber (130). The reflective layer (400) is used to reflect part of the flame light so that the part of the flame light is focused on the combustion zone (131).

6. The ignition device according to claim 5, characterized in that, The combustion chamber (130) has a light-transmitting structure, and the reflective layer (400) is disposed around the outer surface of the combustion chamber (130), extending from one end of the combustion chamber (130) to the other end of the combustion chamber (130).

7. The ignition device according to claim 4, characterized in that, At least a portion of the first intake pipe (200) extends into the intake pipe section (160), the exhaust end of the first intake pipe (200) is at a first distance from the combustion zone (131), the exhaust end of the second intake pipe (300) is at a second distance from the combustion zone (131), and the first distance is greater than the second distance.

8. The ignition device according to claim 4, characterized in that, The ignition device further includes a heating element (500), which is sleeved on the intake pipe section (160). The purge gas inlet (110) is connected to the annular channel and is located on the side of the heating element (500) away from the combustion chamber (130).

9. The ignition device according to claim 4, characterized in that, The flow area of ​​the exhaust port (150) is smaller than the flow area of ​​the intake pipe section (160).

10. The ignition device according to claim 4, characterized in that, The ignition chamber (100) further includes an exhaust pipe section (170), the intake pipe section (160), the combustion chamber (130) and the exhaust pipe section (170) are connected in sequence, and the exhaust pipe section (170) is provided with the exhaust port (150).

11. A semiconductor process apparatus, characterized in that, The device includes a semiconductor process chamber (600) and an ignition device according to any one of claims 1 to 10, wherein the ignition chamber (100) of the ignition device is connected to the semiconductor process chamber (600).

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