Electron beam information detection method and system and regulation and control method of electron emission device

Abstract

The invention provides an electron beam information detection method and system and a regulation and control method of an electron emission device, and belongs to the technical field of electron beam detection.The method comprises the steps that to-be-detected electron beam pulses are emitted, and the to-be-detected electron beam pulses pass through a preset changing magnetic field; the time scale of the preset variable magnetic field is set to correspond to the pulse width time scale of the to-be-measured electron beam pulse; and detecting the pulse performance of the to-be-detected electron beam pulse passing through the preset variable magnetic field, wherein the pulse performance is used for determining the stability information of the electron beam under the pulse width time scale of the to-be-detected electron beam pulse. Through the electron beam information detection method provided by the invention, the detection resolution range of the electron beam information is expanded, the method is not limited to the application of femtosecond-order time scale any more, and the technical problem that the detection range of a traditional measurement method based on a microwave deflection cavity is narrow is solved.

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of electron beam detection, and particularly relates to an electron beam information detection method, a system and a method for regulating and controlling an electron emission device. BACKGROUND

[0002] Electron probes interact with atomic nuclei in a substance, can reflect different information of the substance, and enable people to understand more complete substance properties. The technology of detecting and analyzing different substances by using electron beams is widely applied in various fields such as physics, chemistry, materials, and life science. Characteristic information of an electron beam itself is an important index in the study of substance processes, and can provide reliable data information for researches such as ultrafast detection and experimental data analysis.

[0003] A traditional method adopts a measurement method based on a microwave deflection cavity, and detects characteristic information of an electron beam by using a terahertz field. However, a typical period of a terahertz electromagnetic wave generated by the terahertz field is in a picosecond order, a linear region is in a hundred femtoseconds order, and a detection resolution range is limited in a femtosecond order, so that only the electron beam in a femtosecond order time scale can be detected, and the detection range is narrow. SUMMARY

[0004] The application aims to provide an electron beam information detection method, a system and a method for regulating and controlling an electron emission device, and aims to solve the technical problem of narrow detection range of a traditional measurement method based on a microwave deflection cavity.

[0005] The application provides an electron beam information detection method, which comprises the following steps:

[0006] An electron beam pulse to be detected is emitted, and the electron beam pulse to be detected passes through a preset variable magnetic field; a time scale of the preset variable magnetic field is set to correspond to a pulse width time scale of the electron beam pulse to be detected;

[0007] A pulse performance of the electron beam pulse to be detected passing through the preset variable magnetic field is detected; and the pulse performance is used to determine stability information of the electron beam in the pulse width time scale of the electron beam pulse to be detected.

[0008] In one embodiment, before the step of emitting the electron beam pulse to be detected, the method comprises the following steps:

[0009] A reference beam spot center position when the electron beam pulse to be detected passes through a zero magnetic field is determined;

[0010] According to the reference beam spot center position, a time difference between emitting the electron beam pulse to be detected and triggering the preset variable magnetic field is adjusted until a measured beam spot center position after the electron beam pulse to be detected passes through the preset variable magnetic field is the same as the reference beam spot center position.

[0011] emitting the electron beam pulse to be measured according to the adjusted time difference.

[0012] In one embodiment, the step of passing the electron beam pulse to be measured through a preset varying magnetic field comprises:

[0013] In a first time period, the preset varying magnetic field is regulated according to a current waveform linearly increasing from a negative steady state value to an overcharge value;

[0014] In a second time period continuous with the first time period, the preset varying magnetic field is regulated according to a current waveform linearly decreasing from the overcharge value to a positive steady state value; the overcharge value is greater than the positive steady state value.

[0015] In one embodiment, before the step of regulating the preset varying magnetic field according to a current waveform linearly increasing from a negative steady state value in a first time period, the method comprises:

[0016] According to a pulse width time scale of the electron beam pulse to be measured, a linear increasing time and a linear decreasing time of the current waveform are determined.

[0017] In one embodiment, the step of determining the linear increasing time and the linear decreasing time of the current waveform according to a pulse width time scale of the electron beam pulse to be measured comprises:

[0018] The sum of the linear increasing time and the linear decreasing time is determined to be 10 times of the pulse width time scale.

[0019] In one embodiment, the step of passing the electron beam pulse to be measured through a preset varying magnetic field further comprises:

[0020] The electron beam pulse to be measured is subjected to magnetic field regulation according to the preset varying magnetic field.

[0021] In one embodiment, the step of determining stability information of the electron beam under a pulse width time scale of the electron beam pulse to be measured according to the pulse manifestation comprises:

[0022] According to beam spot length information in the pulse manifestation and reference beam spot length information, pulse width information of the electron beam pulse to be measured is determined; the reference beam spot length information is beam spot length information detected when the electron beam pulse to be measured passes through a zero magnetic field;

[0023] According to the pulse width information of the electron beam pulse to be measured, size stability of the electron beam under a pulse width time scale of the electron beam pulse to be measured is determined.

[0024] In one embodiment, the step of determining stability information of the electron beam under a pulse width time scale of the electron beam pulse to be measured according to the pulse manifestation further comprises:

[0025] determine time jitter information of the electron beam pulse to be measured according to the position jitter information of the center position of the beam spot in the pulse performance;

[0026] determine position stability of the electron beam in the pulse width time scale of the electron beam pulse to be measured according to the time jitter information of the electron beam pulse to be measured.

[0027] The application provides an electron beam information detection system, comprising:

[0028] a magnetic control module, configured to apply a preset variable magnetic field to a region through which the electron beam pulse to be measured passes; a time scale of the preset variable magnetic field is set to correspond to a pulse width time scale of the electron beam pulse to be measured;

[0029] a detection module, disposed apart from the magnetic control module, configured to detect a pulse performance of the electron beam pulse to be measured passing through the preset variable magnetic field; the pulse performance is used to determine stability information of the electron beam in the pulse width time scale of the electron beam pulse to be measured.

[0030] In an embodiment, the magnetic control module triggers the preset variable magnetic field at a time difference from a time at which an electron emission device emits the electron beam pulse to be measured; the electron emission device is configured to emit the electron beam pulse to be measured; and the time difference is used to determine a reference beam spot center position when the electron beam pulse to be measured passes through a zero magnetic field and a measured beam spot center position after the electron beam passes through the preset variable magnetic field.

[0031] The magnetic control module, the detection module, and the electron emission device are set to be mutually time-synchronized.

[0032] In an embodiment, the magnetic control module comprises a magnetic control power supply and a magnetic field control module, and the magnetic control power supply is connected to the magnetic field control module.

[0033] The magnetic control power supply is configured to send a magnetic field control signal to the magnetic field control module according to a current waveform that linearly increases from a negative steady-state value to an overcharge value in a first time period and a current waveform that linearly decreases from the overcharge value to a positive steady-state value in a second time period continuous with the first time period; and the overcharge value is greater than the positive steady-state value.

[0034] The magnetic field control module is configured to apply the preset variable magnetic field to the region through which the electron beam pulse to be measured passes according to the magnetic field control signal.

[0035] In an embodiment, the magnetic field control module comprises a magnetic core structure and a coil, the coil is disposed around a surface of the magnetic core structure, and the coil is connected to the magnetic control power supply.

[0036] The magnetic core structure is a sheet or a laminated sheet structure.

[0037] In one embodiment, the system further comprises:

[0038] A shell surrounds a vacuum chamber, and the vacuum chamber is externally provided with the magnetic field regulation module; the thickness of the shell ranges from 1 mm to 20 mm;

[0039] In the vacuum chamber, the to-be-tested electron beam pulse passes through the preset variable magnetic field.

[0040] The application provides a regulation method of an electron emission device, comprising:

[0041] An to-be-tested electron beam pulse is emitted by an electron emission device, and the to-be-tested electron beam pulse passes through a preset variable magnetic field; the time scale of the preset variable magnetic field is set to correspond to the pulse width time scale of the to-be-tested electron beam pulse;

[0042] The pulse performance of the to-be-tested electron beam pulse passing through the preset variable magnetic field is detected.

[0043] According to the pulse performance, the stability information of the electron beam under the pulse width time scale of the to-be-tested electron beam pulse is determined.

[0044] According to the stability information, the control parameters of the electron emission device are regulated.

[0045] Compared with the prior art, the beneficial effects of the embodiments of the application are as follows:

[0046] The preset varying magnetic field can further change the strength and direction of the magnetic field by changing the input current, so as to realize deflection control of the to-be-measured electron beam pulse. The time scale of the preset varying magnetic field is set to correspond to the pulse width time scale of the to-be-measured electron beam pulse, so that the preset varying magnetic field adjusts the magnetic field strength in different time scales such as nanosecond, microsecond and millisecond, so that the to-be-measured electron beam pulse is deflected. When the to-be-measured electron beam pulse passes through the magnetic field region, the electrons at different positions in the longitudinal direction of the to-be-measured electron beam pulse see different magnetic fields, and thus the magnetic field strength they receive is also different. Therefore, the electrons at different positions in the longitudinal direction of the to-be-measured electron beam pulse are deflected to different positions, forming the pulse performance of the to-be-measured electron beam pulse passing through the preset varying magnetic field. The pulse width information of the to-be-measured electron beam pulse is converted into the beam spot size information of the pulse performance. Further, the pulse width information of the to-be-measured electron beam pulse can be obtained through the beam spot size information, and thus the size stability of the to-be-measured electron beam pulse can be known. When the to-be-measured electron beam pulse reaches the region where the magnetic field is applied, the arrival time is different, and the magnetic field received is also different, so that the to-be-measured electron beam pulse is deflected to different positions. According to the jitter information of the center position of the pulse performance of the to-be-measured electron beam pulse, the time jitter information of the to-be-measured electron beam pulse can be obtained, and thus the position stability of the to-be-measured electron beam pulse can be known. Therefore, according to the pulse performance, the stability information of the electron beam in the pulse width time scale of the to-be-measured electron beam pulse can be determined.

[0047] The electronic beam information detection method provided in the present application realizes magnetic field variation in different pulse width time scales through the preset varying magnetic field, so that the magnetic field strength in the magnetic field region is adjusted in different time scales such as nanosecond, microsecond and millisecond, and the magnetic field waveform that can distinguish the electronic beam information in the time scales such as nanosecond, microsecond and millisecond is obtained. Further, the to-be-measured electron beam pulse is deflected under the variation of the magnetic field strength of the preset varying magnetic field, and the pulse performance of the to-be-measured electron beam pulse is formed. Further, according to the pulse performance of the to-be-measured electron beam pulse, the stability information of the to-be-measured electron beam pulse in the time scales such as nanosecond, microsecond and millisecond can be determined. Therefore, the electronic beam information detection method provided in the present application expands the detection resolution range of the electronic beam information, and is no longer limited to the application in the femtosecond time scale, thereby solving the technical problem of narrow detection range of the traditional microwave deflection cavity measurement method. BRIEF DESCRIPTION OF DRAWINGS

[0048] Figure 1 The step flowchart of the electronic beam information detection method provided in the present application is shown in the figure;

[0049] Figure 2 The motion trajectory of the electronic beam in one embodiment provided in the present application is shown in the figure;

[0050] Figure 3 A schematic diagram of a beam spot of an electron beam in an embodiment of the present application in the X direction;

[0051] Figure 4 A schematic diagram of a preset current waveform in an embodiment of the present application;

[0052] Figure 5 A schematic diagram of a magnetic field variation waveform in an embodiment of the present application;

[0053] Figure 6 A schematic diagram of the structure of an electron beam information detection system in an embodiment of the present application;

[0054] Figure 7 A schematic diagram of the specific structure of a magnetic control module and a detection module in an electron beam information detection system in an embodiment of the present application;

[0055] Figure 8 A schematic diagram of the structure of an electron emission device and an electron beam information detection system in an embodiment of the present application;

[0056] Figure 9 A schematic diagram of the steps of a method for regulating an electron emission device in an embodiment of the present application. DETAILED DESCRIPTION

[0057] In order to make the technical problems to be solved by the present application, the technical solutions and beneficial effects clearer, the present application will be further described in detail below with reference to the drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and not intended to limit the present application.

[0058] It should be noted that when an element is referred to as being "fixed to" or "set on" another element, it can be directly on the other element or indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or indirectly connected to the other element.

[0059] It should be understood that the terms "length", "width", "upper", "lower", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only used to facilitate the description of the present application and simplify the description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore should not be understood as limiting the present application.

[0060] In addition, the terms "first", "second", etc. are used only for descriptive purposes and are not to be construed as indicating or implying relative importance or a specific number of the indicated technical features. Therefore, the features defined with "first", "second" can explicitly or implicitly include one or more of the features. In the description of the present application, the meaning of "a plurality of" is two or more, unless otherwise specifically limited.

[0061] See Figure 1 The present application provides an electron beam information detection method, comprising:

[0062] S10, emitting a to-be-detected electron beam pulse 501; the to-be-detected electron beam pulse 501 passes through a preset variable magnetic field 102; a time scale of the preset variable magnetic field 102 is set to correspond to a pulse width time scale of the to-be-detected electron beam pulse 501;

[0063] S20, detecting a pulse performance of the to-be-detected electron beam pulse 501 passing through the preset variable magnetic field 102; the pulse performance is used to determine stability information of the electron beam under the pulse width time scale of the to-be-detected electron beam pulse 501.

[0064] In the embodiment, the to-be-detected electron beam pulse 501 is generated by an electron emission source. The specific type of the electron emission source is not limited in the present application, which can be a hot cathode emission source, a photoelectric emission source, an electron gun, a cathode ray tube, etc. The movement track of the to-be-detected electron beam pulse 501 is regulated by the preset variable magnetic field 102, so that the to-be-detected electron beam pulse 501 is detected after being regulated by the magnetic field. The to-be-detected electron beam pulse 501 obtains corresponding pulse performance after being deflected by the magnetic field.

[0065] The preset variable magnetic field 102 can further change the strength and direction of the magnetic field by changing the input current, so as to realize the deflection control of the to-be-measured electron beam pulse 501. The time scale of the preset variable magnetic field 102 is set to correspond to the pulse width time scale of the to-be-measured electron beam pulse 501, so that the preset variable magnetic field 102 adjusts the magnetic field strength in different time scales such as nanosecond, microsecond and millisecond, so that the to-be-measured electron beam pulse 501 is deflected. When the to-be-measured electron beam pulse 501 passes through the magnetic field region, the electrons at different positions in the longitudinal direction of the to-be-measured electron beam pulse 501 see different magnetic fields, and thus the magnetic field strength they receive is also different. Therefore, the electrons at different positions in the longitudinal direction of the to-be-measured electron beam pulse 501 are deflected to different positions, forming the pulse performance of the to-be-measured electron beam pulse 501 passing through the preset variable magnetic field 102. The pulse width information of the to-be-measured electron beam pulse 501 is converted into the beam spot size information of the pulse performance. Further, through the beam spot size information, the pulse width information of the to-be-measured electron beam pulse 501 can be obtained, and thus the size stability of the to-be-measured electron beam pulse 501 can be known. When the to-be-measured electron beam pulse 501 reaches the region where the magnetic field is applied, the arrival time is different, and the magnetic field received is also different, so that the to-be-measured electron beam pulse 501 is deflected to different positions. According to the jitter information of the center position of the pulse performance of the to-be-measured electron beam pulse 501, the time jitter information of the to-be-measured electron beam pulse 501 can be obtained, and thus the position stability of the to-be-measured electron beam pulse 501 can be known. Therefore, according to the pulse performance, the stability information of the electron beam in the pulse width time scale of the to-be-measured electron beam pulse 501 can be determined.

[0066] The electronic beam information detection method provided in the present application realizes the change of the magnetic field in different pulse width time scales through the preset variable magnetic field 102, so that the magnetic field strength in the magnetic field region is adjusted in different time scales such as nanosecond, microsecond and millisecond, and the magnetic field waveform that can distinguish the electronic beam information in the time scales such as nanosecond, microsecond and millisecond is obtained. Further, the to-be-measured electron beam pulse 501 is deflected under the change of the magnetic field strength of the preset variable magnetic field 102, and the pulse performance of the to-be-measured electron beam pulse 501 is detected. Further, according to the pulse performance of the to-be-measured electron beam pulse 501, the stability information of the to-be-measured electron beam pulse 501 in the time scales such as nanosecond, microsecond and millisecond can be determined. Therefore, through the electronic beam information detection method provided in the present application, the detection resolution range of the electronic beam information is expanded, and is no longer limited to the application in the femtosecond time scale, so that the technical problem of the narrow detection range of the traditional microwave deflection cavity measurement method is solved.

[0067] Please refer to Figure 2 In one embodiment, S10, before the step of emitting the to-be-measured electron beam pulse 501, the method further comprises:

[0068] S101, determining a reference beam spot center position of the to-be-tested electron beam pulse 501 passing through a zero magnetic field;

[0069] S102, adjusting a time difference between the emission of the to-be-tested electron beam pulse 501 and the triggering of the preset variable magnetic field 102 according to the reference beam spot center position, until the to-be-tested beam spot center position after the to-be-tested electron beam pulse 501 passes through the preset variable magnetic field 102 is the same as the reference beam spot center position;

[0070] S103, emitting the to-be-tested electron beam pulse 501 according to the adjusted time difference.

[0071] In the embodiment, the head of the to-be-tested electron beam pulse 501 experiences a magnetic field in the opposite direction to the tail. When the to-be-tested electron beam pulse 501 passes through the preset variable magnetic field 102, the head and the tail of the to-be-tested electron beam pulse 501 will be deflected to two opposite directions. If the center of the to-be-tested electron beam pulse 501 experiences a magnetic induction intensity B of zero, no deflection will occur, and the to-be-tested electron beam pulse 501 will move along the first trajectory 502 to hit the center position of the detector in the detection module 20. The center of the to-be-tested electron beam pulse 501 reaches the center of the preset variable magnetic field 102 at different times, the to-be-tested electron beam pulse 501 experiences different magnetic fields, and the center of the to-be-tested electron beam pulse 501 will be deflected to different positions, such as the second trajectory 503 of the to-be-tested electron beam pulse 501 relative to the zero phase delay t as shown. Figure 2 The time length of t is equivalent to the distance between the center positions of the electron beams hitting the screen, i.e., the position information on the detector in the detection module 20 can be converted into time information.

[0072] The zero magnetic field is a case where the magnetic field strength of the preset variable magnetic field 102 is zero, which can also be understood as a case without energizing current. The to-be-tested electron beam pulse 501 hits the detector in the detection module 20 to form a reference beam spot center position in the case of a zero magnetic field, such as the center position of the reference beam spot 221 as shown. Figure 3 The reference beam spot center position is taken as a reference to adjust the time difference between the emission time of the to-be-tested electron beam pulse 501 and the triggering time of the preset variable magnetic field 102, so that the to-be-tested beam spot center position (such as the center position of the to-be-tested beam spot 222 as shown) is the same as the reference beam spot center position. Figure 3The center position of the test beam spot 222 shown is at the same position as the center position of the reference beam spot. The adjusted time difference is the time difference between the emission time of the test electron beam pulse 501 and the trigger time of the preset changing magnetic field 102, which can also be understood as the delay between the emission time of the test electron beam pulse 501 and the trigger time of the preset changing magnetic field 102. Through the method provided in this embodiment, the delay between the emission time of the test electron beam pulse 501 and the trigger time of the preset changing magnetic field 102 can be controlled, so that the center of the emitted test electron beam pulse 501 is located at the position where the magnetic induction intensity of the preset changing magnetic field 102 is zero, which is also the zero phase of the preset changing magnetic field 102, such as... Figure 4 The position corresponding to time t4 is shown.

[0073] Furthermore, by emitting the electron beam pulse 501 to be tested and triggering the preset changing magnetic field 102 according to the adjusted time difference, the center of the multiple electron beam pulses 501 to be tested emitted multiple times can be located at zero phase, so as to more accurately detect the pulse performance of the electron beam pulses 501 to be tested in subsequent steps to determine the stability information of the electron beam.

[0074] Please see Figure 4 In one embodiment, in S10, the step of the electron beam pulse 501 being tested passing through a preset changing magnetic field 102 includes:

[0075] S110, during the first time period, the preset changing magnetic field 102 is adjusted according to the current waveform that increases linearly from the negative steady-state value to the overcharge value;

[0076] S120, in the second time period that is continuous with the first time period, the preset changing magnetic field 102 is adjusted according to the current waveform that decreases linearly from overcharge to positive steady state value; the overcharge value is greater than the positive steady state value.

[0077] In this embodiment, the first time period is Figure 4 The time interval is shown as t1 to t2. The second time interval is... Figure 4 The time interval from t2 to t3 is shown. The first and second time intervals are consecutive. During the first time interval, the current waveform linearly increases from the negative steady-state value -I1 to the overcharge value I2. During the second time interval, the current waveform linearly decreases from the overcharge value I2 to the positive steady-state value +I1. The overcharge value I2 is greater than the positive steady-state value +I1. The positive steady-state value +I1 and the negative steady-state value -I1 are the target current values ​​for current waveform 111, which can be set according to the actual application scenario. Based on the current changes during the first and second time intervals, the waveform is formed as shown below. Figure 4 The current waveform 111 is shown. Based on the current waveform 111, the current flows through a coil 122 (such as...) surrounding the surface of the magnetic core structure 121. Figure 2 As shown, a preset changing magnetic field 102 will be formed, such as...Figure 5 Further, the passing electron beam pulse 501 is subjected to magnetic field regulation according to the preset varying magnetic field 102.

[0078] Through the S110 to S120 provided by the present application, at the first time period from t1 to t2, the current starts to linearly increase from the negative steady-state value -I1, and reaches the overcharge value I2 at t2. The overcharge value I2 is greater than the positive steady-state value I1, and the current waveform 111 has the overcharge characteristic. At the continuous second time period from t2 to t3, the current starts to linearly decrease from the overcharge value I2, and reaches the positive steady-state value +I1 at t3. The overcharge current waveform 111 linearly increases from the negative steady-state value -I1 to the overcharge value I2, and then linearly decreases from the overcharge value I2 to the positive steady-state value +I1, which can generate a reverse eddy current at t2 to t3 to offset the eddy current generated at t1 to t2, and further make the current waveform 111 more similar to the preset varying magnetic field 102, and closer to linear variation. Therefore, through the control of the current waveform 111, the magnetic field can reach a steady state at t3, and the center position of the electron beam pulse 501 to be detected can be set at t4 (that is, the zero phase time of the preset varying magnetic field 102), so that the subsequent step of detecting the pulse performance of the electron beam pulse 501 to be detected can be more accurately implemented to determine the stability information of the electron beam.

[0079] In one embodiment, when the electron beam pulse 501 to be detected is a microsecond-level pulse width, the rising edge of the preset varying magnetic field 102 also needs to be microsecond-level. When the rising edge of the preset varying magnetic field 102 is microsecond-level, the rising edge of the current waveform 111 also needs to have a fast rising edge. However, the fast rising variation of the current waveform 111 will introduce eddy current. The longer the relaxation time of the eddy current, the longer the time for the magnetic field to reach a steady state, and further causing the magnetic field to lag, thereby reducing the rising edge slope of the magnetic field (which can also be understood as the deflection slope), affecting the measurement of the time resolution. Through the method steps of S110 to S120 provided by the present application, the problem of eddy current caused by detecting the microsecond-level pulse width of the electron beam pulse 501 to be detected can be solved.

[0080] In one embodiment, S110, before the step of regulating the preset varying magnetic field 102 according to the current waveform linearly increasing from the negative steady-state value in the first time period, the method further comprises:

[0081] S109, determining the linear increase time and the linear decrease time of the current waveform according to the pulse width time scale of the electron beam pulse 501 to be detected.

[0082] In the present embodiment, according to the variation of the current in the first time period and the second time period, a current waveform 111 is formed as shown in FIG. 6. Figure 4The current waveform 111 is shown. Based on the current waveform 111, the current flows through a coil 122 (such as...) surrounding the surface of the magnetic core structure 121. Figure 2 As shown, a preset changing magnetic field 102 will be formed, such as... Figure 5 As shown. Furthermore, the magnetic field of the passing electron beam pulse 501 is modulated according to the preset changing magnetic field 102. The magnetic field sensed by the head of the electron beam pulse 501 is opposite in direction and different in intensity from that sensed by the tail. When the electron beam pulse 501 passes through the preset changing magnetic field 102, the head and tail of the electron beam pulse 501 will deflect in two opposite directions. The different magnetic fields sensed by different parts of the electron beam pulse 501 will appear at different positions on the detector in the detection module 20, forming a pattern as shown. Figure 3 The test beam spot 222 is shown. The pulse width and time information of the test electron beam pulse 501 will be converted into the beam spot length information of the test beam spot 222 on the detector in the detection module 20, which can also be understood as... Figure 3 The length information in the X direction is marked in the figure.

[0083] Based on the pulse width timescale of the electron beam pulse 501 to be measured, the corresponding time range of the magnetic induction intensity B of the preset changing magnetic field 102 is set, and consequently, the corresponding time range of the current I of the current waveform 111 is set. The sum of the linear increase time and the linear decrease time of the current waveform is from time t1 to time t3, which is the same as the time range of the magnetic induction intensity B of the preset changing magnetic field 102 from time t1 to time t3. Between time t1 and time t3 of the current waveform, the linear increase time and the linear decrease time of the current waveform are set. The smaller the pulse width timescale of the electron beam pulse 501 to be measured, the shorter the time period from time t1 to time t2 corresponding to the linear increase of the current waveform 111, and the shorter the time period from time t2 to time t3 corresponding to the linear decrease of the current waveform 111. The larger the pulse width timescale of the electron beam pulse 501 under test, the longer the time interval from t1 to t2 corresponding to the linear increase of the current waveform, and the longer the time interval from t2 to t3 corresponding to the linear decrease of the current waveform line 111.

[0084] In one embodiment, S109, the step of determining the linear increase time and linear decrease time of the current waveform based on the pulse width time scale of the electron beam pulse 501 to be measured includes:

[0085] S1091, determine that the sum of the linearly increasing time and the linearly decreasing time is 10 times the pulse width time scale.

[0086] The greater the pulse width time scale of the to-be-measured electron beam pulse 501 to be measured in the embodiment, the greater the interval from the t1 moment to the t3 moment of the rising edge change time range of the preset variable magnetic field 102 magnetic induction strength B required, that is, the greater the interval from the t1 moment to the t3 moment of the current I change time range of the required current waveform 111, that is, the greater the sum of the linear increasing time and the linear decreasing time of the current waveform 111. The sum of the linear increasing time and the linear decreasing time is set to 10 times the pulse width time scale of the to-be-measured electron beam pulse 501, which can also be understood as an order of magnitude larger.

[0087] When the current I of the current waveform 111 is linearly increased from the negative steady-state value to the overcharge value and then linearly decreased from the overcharge value to the positive steady-state value, in the process of current change, the rising edge of the magnetic induction strength B of the preset variable magnetic field 102 has a buffer change at the initial time t1 and the end time t3. It is a nonlinear change process. By setting the sum of the linear increasing time and the linear decreasing time to 10 times the pulse width time scale in the embodiment, the initial time t1 and the end time t3 of the current waveform 111 can be greater than the pulse width time scale, and the pulse width of the to-be-measured electron beam pulse 501 can be located in the middle region between the initial time t1 and the end time t3. Therefore, the deflection force of the to-be-measured electron beam pulse 501 received from the preset variable magnetic field 102 is more linear.

[0088] In one embodiment, in S10, the step of passing the to-be-measured electron beam pulse 501 through the preset variable magnetic field 102 further includes:

[0089] S130, according to the preset variable magnetic field 102, the magnetic field of the to-be-measured electron beam pulse 501 is controlled.

[0090] In the embodiment, when the to-be-measured electron beam pulse 501 passes through the magnetic field of the preset variable magnetic field 102, it will be deflected by the Lorentz force. The size of the magnetic induction strength B of the preset variable magnetic field 102 is used to adjust the deflection intensity of the pulse width region of the to-be-measured electron beam pulse 501, that is, the time resolution of the electron pulse width measurement. By adjusting the current waveform 111, the change of the preset variable magnetic field 102 can be adjusted to measure the pulse width information and / or time jitter information of the to-be-measured electron beam pulse 501 of different time scales.

[0091] In one embodiment, by the electron beam information detection method provided in the present application, the preset variable magnetic field 102 capable of distinguishing the microsecond time scale of the electron beam information is obtained. By adjusting the current waveform 111, the detection of the pulse width information and / or the time jitter information of the microsecond to millisecond time scale of the electron beam can be realized, and the application of the electron probe-based pump detection technology in the microsecond time scale can be improved.

[0092] In one embodiment, in S20, the pulse performance is used to determine the stability information of the electron beam in the pulse width time scale of the to-be-detected electron beam pulse 501, including:

[0093] S210, according to the beam spot length information in the pulse performance and the reference beam spot length information, the pulse width information of the to-be-detected electron beam pulse 501 is determined; the reference beam spot length information is the beam spot length information formed by the to-be-detected electron beam pulse 501 passing through the zero magnetic field;

[0094] S220, according to the pulse width information of the to-be-detected electron beam pulse 501, the size stability of the electron beam in the pulse width time scale of the to-be-detected electron beam pulse 501 is determined.

[0095] In the present embodiment, the pulse performance includes the length information of the beam spot and the center position information of the beam spot. When the coil 122 (as shown in Figure 3 ) arranged around the surface of the magnetic core structure 121 is not energized with the current waveform 111 (which can also be understood as passing through the zero magnetic field), the to-be-detected electron beam pulse 501 will form a reference beam spot 221 as shown in Figure 3 on the detector in the detection module 20. The reference beam spot 221 corresponds to the formation of the reference beam spot length information, which can also be understood as the length information x1 of the reference beam spot 221 in the X direction as shown in Figure 3 .

[0096] When the coil 122 is energized with the current waveform 111, the to-be-detected electron beam pulse 501 will form a to-be-detected beam spot 222 as shown in Figure 3 on the detector in the detection module 20. The to-be-detected beam spot 222 corresponds to the formation of the beam spot length information in the pulse performance, which can also be understood as the length information x2 of the to-be-detected beam spot 222 in the X direction as shown in Figure 3The length information x2 of the to-be-tested beam spot 222 in the X direction is shown. When the moment at which the to-be-tested electron beam pulse 501 arrives at the magnetic field is aligned with the zero phase of the magnetic field, the center position of the reference beam spot 221 arriving at the detector in the detection module 20 is the same as that when the magnetic field is not added, and the to-be-tested electron beam pulse 501 moves along the first trajectory 502. When the delay of the to-be-tested electron beam pulse 501 relative to the zero phase of the magnetic field is adjusted, the to-be-tested electron beam pulse 501 senses different magnetic fields and is deflected to different positions on the detector in the detection module 20, such as moving along the second trajectory 503. The length of the delay of the to-be-tested electron beam pulse 501 relative to the zero phase of the magnetic field has a corresponding relationship with the length of the shift of the center position of the beam spot on the detector in the detection module 20. Further, the time corresponding to each pixel on the detector in the detection module 20 can be obtained according to the corresponding relationship. Thus, the pulse width information of the to-be-tested electron beam pulse 501 corresponding to the to-be-tested beam spot 222 is obtained according to the length information x2, and the length information x1 is the intrinsic size of the electron beam corresponding to the reference beam spot 221.

[0097] Further, according to the pulse width information of the reference beam spot 221 and the pulse width information of the to-be-tested beam spot 222, the pulse width information of the to-be-tested electron beam pulse 501 can be obtained

[0098] According to the pulse width information of the to-be-tested electron beam pulse 501, the stability of the pulse width size of the electron beam in the pulse width time scale can be obtained. By comparing the pulse width information between multiple to-be-tested electron beam pulses 501 emitted multiple times, the change between the pulse width information corresponding to the multiple to-be-tested electron beam pulses 501 can be obtained, and further, whether the pulse width information of the to-be-tested electron beam pulse 501 is stable and unchanged in the pulse width time scale of the electron beam can be obtained, and further, the size stability of the electron beam can be determined.

[0099] In one embodiment, in S20, the step of pulse manifestation for determining the stability information of the electron beam in the pulse width time scale of the to-be-tested electron beam pulse 501 further includes:

[0100] S230, determining the time jitter information of the to-be-tested electron beam pulse 501 according to the position jitter information of the center position of the beam spot in the pulse manifestation;

[0101] S240, determining the position stability of the electron beam in the pulse width time scale of the to-be-tested electron beam pulse 501 according to the time jitter information of the to-be-tested electron beam pulse 501.

[0102] In this embodiment, when the to-be-tested electron beam pulse 501 arrives at the deflection cavity formed by the preset variable magnetic field 102, the arrival time of the to-be-tested electron beam pulse 501 is different, the magnetic field sensed is different, and the to-be-tested electron beam pulse 501 is deflected to different positions on the detector in the detection module 20, such as Figure 2The center of the electron beam pulse 501 is shown in the first trajectory 502 and the second trajectory 503. Thus, when the center of the electron beam pulse 501 reaches the zero phase moment of the preset changing magnetic field 102 at different times, the center of the electron beam pulse 501 experiences different magnetic fields, so that the center of the electron beam pulse 501 is deflected to different positions to form the beam spot center position in the pulse manifestation. The position jitter information of the beam spot center position in the pulse manifestation can be understood as the position change information of the beam spot center position. Through the position jitter information of the beam spot center position in the pulse manifestation, the time jitter information can be converted. Through the position jitter information of the beam spot center position between the multiple electron beam pulses 501 emitted multiple times, the time jitter information between each emission of the electron beam pulse 501 can be obtained. Through the measurement of the beam spot center position information of the electron beam pulse 501 of different emissions on the detector in the detection module 20, the time jitter information between the multiple electron beam pulses 501 can be obtained. Thus, according to the time jitter information of the electron beam pulse 501, whether the position of the electron beam is stable in the pulse width time scale of the electron beam pulse 501 can be known.

[0103] Please refer to Figure 6 The present application provides an electron beam information detection system 100. The electron beam information detection system 100 comprises a magnetic control module 10 and a detection module 20. The magnetic control module 10 is used to apply a preset changing magnetic field 102 to the region 101 through which the electron beam pulse 501 passes. The time scale of the preset changing magnetic field 102 is set to correspond to the pulse width time scale of the electron beam pulse 501. The detection module 20 is arranged apart from the magnetic control module 10 and is used to detect the pulse manifestation of the electron beam pulse 501 passing through the preset changing magnetic field 102. The pulse manifestation is used to determine the stability information of the electron beam in the pulse width time scale of the electron beam pulse 501.

[0104] In the embodiment, the to-be-tested electron beam pulse 501 is generated by an electron emission source. The specific type of the electron emission source is not limited in the application, and can be a hot cathode emission source, a photoelectric emission source, an electron gun, a cathode ray tube, etc. The preset varying magnetic field 102 applied by the magnetic control module 10 is used to control the motion trajectory of the to-be-tested electron beam pulse 501, so that the to-be-tested electron beam pulse 501 reaches the detection module 20 after the magnetic field control. The detection module 20 receives the detection signal obtained by the to-be-tested electron beam pulse 501 after the magnetic field deflection, and forms a pulse performance. The magnetic control module 10 can further change the strength and direction of the magnetic field by changing the different input currents, so as to realize the deflection control of the to-be-tested electron beam pulse 501. The magnetic control module 10 can generate rising edges and falling edges of different time scales by regulating the different input currents, so as to adjust the magnetic field strength in the region 101 in the nanosecond scale, the microsecond scale, the millisecond scale, etc., so that the to-be-tested electron beam pulse 501 is deflected. When the to-be-tested electron beam pulse 501 passes through the region 101, the electrons at different positions in the longitudinal direction of the to-be-tested electron beam pulse 501 see different magnetic fields, and thus are subjected to different magnetic field strengths. Therefore, the electrons at different positions in the longitudinal direction of the to-be-tested electron beam pulse 501 are deflected to different positions of the detection module 20. The pulse width information of the to-be-tested electron beam pulse 501 is converted into the beam spot size information displayed in the detection module 20. Further, through the beam spot size information, the pulse width information of the to-be-tested electron beam pulse 501 can be obtained. When each to-be-tested electron beam pulse 501 reaches the region 101 where the magnetic field is applied, the arrival time is different, and the magnetic field received is also different, so that the to-be-tested electron beam pulse 501 is deflected to different positions of the detection module 20. According to the center position information of different to-be-tested electron beams received by the detection module 20, the time jitter information between the plurality of to-be-tested electron beam pulses 501 can be obtained.

[0105] The application provides an electron beam information detection system 100. The magnetic control module 10 can switch different currents to achieve the rising edge and falling edge of the magnetic field change in different time scales, so that the magnetic control module 10 adjusts the magnetic field intensity in the region 101 in different time scales such as nanosecond, microsecond and millisecond, and obtains the magnetic field waveform which can distinguish the electron beam information in the time scales such as nanosecond, microsecond and millisecond. Further, the magnetic control module 10 adjusts the magnetic field intensity in the region 101 in different time scales such as nanosecond, microsecond and millisecond, so that the to-be-measured electron beam pulse 501 is deflected to form the pulse performance of the to-be-measured electron beam pulse 501, which is detected by the detection module 20. According to the pulse performance of the to-be-measured electron beam pulse 501, the pulse width information and / or time jitter information in the time scales such as nanosecond, microsecond and millisecond can be determined, and then the stability information of the electron beam in the pulse width time scale of the to-be-measured electron beam pulse 501 can be determined. Therefore, the detection resolution range of the to-be-measured electron beam pulse 501 is expanded by the electron beam information detection system 100 provided by the application, and is no longer limited to the application in the femtosecond time scale, and the technical problem of the narrow detection range of the traditional microwave deflection cavity measurement method is solved.

[0106] In one embodiment, the magnetic control module 10 triggers the preset variable magnetic field 102 at a time point having a time difference from the time point at which the electron emission device 500 emits the to-be-measured electron beam pulse 501; the electron emission device 500 is configured to emit the to-be-measured electron beam pulse 501; and the time difference is determined according to the reference beam spot center position when the to-be-measured electron beam pulse 501 passes through the zero magnetic field and the to-be-measured beam spot center position after the to-be-measured electron beam pulse 501 passes through the preset variable magnetic field 102.

[0107] The magnetic control module 10, the detection module 20 and the electron emission device 500 are arranged to be time-synchronized with each other.

[0108] In this embodiment, the reference beam spot center position of the to-be-tested electron beam pulse 501 passing through the zero magnetic field is determined. According to the reference beam spot center position, the time difference between the emission of the to-be-tested electron beam pulse 501 and the triggering of the preset variable magnetic field 102 is adjusted until the to-be-tested beam spot center position after the to-be-tested electron beam pulse 501 passes through the preset variable magnetic field 102 is the same as the reference beam spot center position. The to-be-tested electron beam pulse 501 is emitted according to the adjusted time difference. For related description of the time difference, please refer to the related description of S101 to S103. According to the adjusted time difference, the to-be-tested electron beam pulse 501 is emitted and the preset variable magnetic field 102 is triggered, so that the centers of multiple to-be-tested electron beam pulses 501 emitted multiple times are located on the zero phase, that is, the pulse performance of the to-be-tested electron beam pulse 501 can be more accurately detected in the subsequent step to determine the stability information of the electron beam. The emission time of the to-be-tested electron beam pulse 501 emitted by the electron emission device 500, the magnetic control time of the magnetic control module 10 and the detection time of the detection module 20 are kept time synchronized, which can be understood as that the control mode between the electron emission device 500, the magnetic control module 10 and the detection module 20 is synchronous interlocking control, and the relative delay between each other can be adjusted according to the actual application scene, so that the relative delay between each other can be adjusted on the same time reference, and then the modules in the system work cooperatively on the same time reference, ensuring that the node times are consistent.

[0109] Please refer to Figure 7 In one embodiment, the magnetic control module 10 includes a magnetic control power supply 110 and a magnetic field control module 120, and the magnetic control power supply 110 is connected with the magnetic field control module 120. The magnetic control power supply 110 is configured to send a magnetic field control signal to the magnetic field control module 120 according to a current waveform linearly increasing from a negative steady-state value to an overcharge value in a first time period and a current waveform linearly decreasing from the overcharge value to a positive steady-state value in a second time period continuous with the first time period. The overcharge value is greater than the positive steady-state value. The magnetic field control module 120 is configured to apply a preset variable magnetic field 102 to the region 101 through which the to-be-tested electron beam pulse 501 passes according to the magnetic field control signal.

[0110] In this embodiment, the magnetic control power supply 110 generates a magnetic field by controlling the current of the magnetic field regulation module 120, and then controls the to-be-measured electron beam pulse 501 through the magnetic field. By the magnetic control power supply 110, the size and direction of the current input to the magnetic field regulation module 120 can be adjusted, and the control of the intensity, focusing, deflection and other parameters of the to-be-measured electron beam pulse 501 can be realized. Through the magnetic control power supply 110 and the magnetic field regulation module 120, high-precision control of the transmission trajectory of the to-be-measured electron beam pulse 501 can be realized, and flexible adjustment can be made according to different application scenarios to ensure the stability and accuracy of the to-be-measured electron beam pulse 501 in the transmission process. Therefore, through the magnetic control power supply 110 and the magnetic field regulation module 120, the pulse width and / or time jitter information of the unknown to-be-measured electron beam pulse 501 can be measured.

[0111] In one embodiment, the magnetic field regulation module 120 is a guide iron, also known as a deflection magnet, which can be used to diagnose the pulse width information and / or time jitter information of the to-be-measured electron beam pulse 501.

[0112] In one embodiment, the magnetic field regulation module 120 includes a magnetic core structure 121 and a coil 122, and the coil 122 is arranged around the surface of the magnetic core structure 121, as shown in FIG. 1. Figure 2 The coil 122 is connected with the magnetic control power supply 110. The magnetic core structure 121 is a sheet or laminated structure.

[0113] In this embodiment, the coil 122 is used to generate a magnetic field by passing the current waveform sent by the magnetic control power supply 110. The strength of the magnetic field is proportional to the size of the current, and will change with the change of the current. The magnetic core structure 121 is a metal conductor. According to Faraday's law of electromagnetic induction, when the magnetic core structure 121 is placed in a changing magnetic field or moves in a fixed magnetic field to cut the magnetic lines of force, an induced current will be generated in the magnetic core structure 121. The flow lines of the induced current form a closed loop in the magnetic core structure 121. The magnetic core structure 121 is used to enhance and guide the magnetic field, so that the magnetic field is more concentrated and stable. The strength of the eddy current is related to the materials of the magnetic core structure 121 and the shell 40. The smaller the electrical conductivity and magnetic permeability of the magnetic core structure 121 and the shell 40, the weaker the eddy current. The magnetic core structure 121 uses silicon steel sheets. The thickness d1 of the shell 40 is set to be small to reduce the eddy current.

[0114] The magnetic core structure 121 is a sheet or laminated structure, which can increase the loop resistance of the eddy current, so that the eddy current encounters greater resistance during the flow, thereby limiting the size of the eddy current. Further, the sheet or laminated structure of the magnetic core structure 121 is isolated by an insulating material, which can block the flow of the eddy current between adjacent sheets, so that the eddy current can only be confined in each individual sheet, thereby reducing the strength of the eddy current. Thus, through the design of the magnetic field regulation module 120 in this embodiment, the eddy current generated by the magnetic control module 10 can be reduced, the performance of the electromagnetic device is improved, and the detection accuracy of the electron beam information detection system 100 is improved.

[0115] Please refer to Figure 8 In one embodiment, the electron beam information detection system 100 further comprises a shell 40. The shell 40 encloses a vacuum chamber 410. The vacuum chamber 410 is externally provided with the magnetic field regulation module 120. The thickness of the shell 40 ranges from 1 millimeter to 20 millimeters.

[0116] In the vacuum chamber 410, the to-be-detected electron beam pulse 501 passes through the preset variable magnetic field 102.

[0117] In this embodiment, the shell 40 encloses the vacuum chamber 410, which can ensure that the entire system is in a vacuum range. The shell 40 can be made of glass or metal to ensure that the inside is a vacuum environment. The thickness d1 of the shell 40 ranges from 1 millimeter to 20 millimeters, which can make the thickness of the shell 40 thinner to reduce the eddy current. The magnetic field regulation module 120 is arranged outside the vacuum chamber 410 to apply a magnetic field to regulate the to-be-detected electron beam pulse 501 in the vacuum chamber 410. The emission, magnetic deflection, and detection of the to-be-detected electron beam pulse 501 occur in the vacuum chamber 410, which provides a vacuum environment for the detection process of the to-be-detected electron beam pulse 501, so that there is no external interference in the detection process, and the detection stability is improved.

[0118] In one embodiment, the detection module 20 comprises a signal conversion module 210, a detector 220, and a detection light adjustment module 230. The signal conversion module 210 is arranged between the detector 220 and the magnetic control module 10, and is used to convert the electronic signal generated by the to-be-detected electron beam pulse 501 after the magnetic field applied by the magnetic control module 10 into an optical detection signal. The detection light adjustment module 230 is arranged between the signal conversion module 210 and the detector 220, and is used to adjust the light path and field of view of the optical detection signal so that the optical detection signal reaches the detector 220. The detector 220 is used to detect the optical detection signal and form a pulse representation of the to-be-detected electron beam pulse 501. The pulse representation is used to determine the stability information of the electron beam in the pulse width time scale of the to-be-detected electron beam pulse 501.

[0119] In this embodiment, the signal conversion module 210 includes a phosphor screen or a fluorescent screen, which can convert the electrical signal into an optical signal. The detector 220 includes an imaging plate or a scintillator CCD camera or a direct electron detection camera, etc., which can receive the optical detection signal to form a beam spot, for example Figure 3 The reference beam spot 221 and the to-be-detected beam spot 222. The signal conversion module 210 is arranged between the detector 220 and the magnetic control module 10, which can be understood as the signal conversion module 210 being arranged in the transmission path of the electron signal regulated by the magnetic control module 10. The optical detection signal is detected by the detector 220 to form a beam spot. Through the signal conversion module 210 and the detector 220, the pulse performance of the to-be-detected electron beam pulse 501 can be detected and presented, and thus the stability information of the electron beam in the pulse width time scale of the to-be-detected electron beam pulse 501 can be determined.

[0120] The detection light adjustment module 230 is arranged between the signal conversion module 210 and the detector 220, which can be understood as the detection light adjustment module 230 being arranged in the transmission path of the optical detection signal formed after being converted by the signal conversion module 210, for adjusting the light path and field of view of the optical detection signal, so that the optical detection signal can accurately reach the detector 220. The detection light adjustment module 230 includes a light path guiding module 231 and a field of view adjustment module 232. The light path guiding module 231 includes at least one mirror. The mirror changes the propagation direction of the optical detection signal, and a virtual image of the same size can be formed. The mirror can be a plane mirror or a spherical mirror. The field of view adjustment module 232 includes at least one lens, which can focus or / and collimate the optical detection signal. The light path guiding module 231 is arranged between the signal conversion module 210 and the field of view adjustment module 232. The field of view adjustment module 232 is arranged between the light path guiding module 231 and the detector 220. The light path guiding module 231 guides the light path of the optical detection signal formed after being converted by the signal conversion module 210, so as to reach the detector 220. The field of view adjustment module 232 focuses or / and collimates the optical detection signal guided by the light path guiding module 231, so that the optical detection signal with a large field of view is converted into an optical detection signal with a small field of view, and is projected onto the sensing chip of the detector 220. Moreover, the light path of the optical detection signal is adjusted by the detection light adjustment module 230, so that the positions of the elements in the detection module 20 are more compact, the volume of the electron beam information detection system 100 is further reduced, and the electron beam information detection system 100 is more convenient to carry.

[0121] Please refer to Figure 9 The application provides a method for regulating and controlling an electron emission device, which comprises the following steps:

[0122] S310, emitting, by the electron emission device 500, a to-be-tested electron beam pulse 501 passing through the preset variable magnetic field 102; a time scale of the preset variable magnetic field 102 is set to correspond to a pulse width time scale of the to-be-tested electron beam pulse 501;

[0123] S320, detecting a pulse performance of the to-be-tested electron beam pulse 501 passing through the preset variable magnetic field 102; the pulse performance is used to determine stability information of the electron beam in the pulse width time scale of the to-be-tested electron beam pulse 501;

[0124] S330, according to the stability information, regulating control parameters of the electron emission device 500.

[0125] In the embodiment, the related description of steps S310 and S320 can refer to the related description in steps S10 and S20. The stability information of the electron beam in the pulse width time scale of the to-be-tested electron beam pulse 501 includes position stability and size stability. The position stability reflects time jitter information of the to-be-tested electron beam pulse 501. The size stability reflects pulse width information of the to-be-tested electron beam pulse 501.

[0126] According to the pulse width information of the to-be-tested electron beam pulse 501, the stability of the pulse width size of the electron beam in the pulse width time scale can be obtained. By comparing the pulse width information between multiple to-be-tested electron beam pulses 501 emitted for multiple times, the change between the corresponding pulse width information of the multiple to-be-tested electron beam pulses 501 can be obtained, and then whether the pulse width information of the to-be-tested electron beam pulse 501 in the pulse width time scale is stable or not can be obtained, and then the size stability of the electron beam can be determined. Further, according to the size stability of the electron beam as a reference, the control parameters of the electron emission device 500 emitting the to-be-tested electron beam pulse 501 are regulated, so as to improve the stability of the electron emission device 500.

[0127] By measuring the beam spot center position information of the to-be-tested electron beam pulse 501 in different shots on the detector in the detection module 20, the time jitter information between the multiple to-be-tested electron beam pulses 501 can be obtained. Therefore, according to the time jitter information of the to-be-tested electron beam pulse 501, whether the position of the electron beam in the pulse width time scale of the to-be-tested electron beam pulse 501 is stable or not can be obtained, and then the position stability of the electron beam can be determined. Further, according to the position stability of the electron beam as a reference, the control parameters of the electron emission device 500 emitting the to-be-tested electron beam pulse 501 are regulated, so as to improve the stability of the electron emission device 500.

[0128] In one embodiment, the electron emission device 500 includes an electron emitter 510, a grid 520, and a power supply 530. The grid 520 is arranged at the periphery of the electron emitter 510, and the grid 520 regulates the electron beam emitted by the electron emitter 510. The power supply 530 is configured to provide a voltage signal, which can be a high-voltage power supply. The electron emitter 510 includes a hot cathode or a cold cathode. The hot cathode includes a spiral filament or a flat cathode. The cold cathode includes a photocell, a voltage stabilizer, a neon tube, etc. Electrons on the surface of the electron emitter 510 are driven by an electric field and overcome the surface potential energy barrier to be emitted from the electron emitter 510. The grid 520 is arranged at the periphery of the electron emitter 510, and can also be understood as being arranged in the transmission path of the electron beam. When the potential of the grid 520 is lower than the potential of the cathode, a potential difference is formed. When the potential difference between the grid 520 and the cathode is lower than a threshold value, the electron beam cannot pass through the grid 520. When the potential of the grid 520 is increased relative to the cathode, so that the potential difference between the grid 520 and the cathode breaks through the threshold value, the electron beam can pass through the grid 520. The cathode voltage remains unchanged, and the potential of the grid 520 is changed to control the on-off of the electron beam, thereby switching the electron beam emitted by the electron emitter 510, controlling the emission and suppression of the electron source, and realizing the regulation of the to-be-measured electron beam pulse 501 emitted by the electron emitter 510 in different pulse width dimensions and different delay dimensions. The power supply 530 is connected to the electron emitter 510 and the grid 520, respectively, and is configured to provide a voltage signal to the electron emitter 510 and the grid 520.

[0129] Under the driving of the voltage signal output by the power supply 530, the potential of the grid 520 is changed to control the on-off of the electron beam to form a single to-be-measured electron beam pulse 501. By controlling the switching speed of the grid 520 through the voltage signal output by the power supply 530, the to-be-measured electron beam pulse 501 with different time scales of pulse width can be obtained. The pulse width τ of the to-be-measured electron beam pulse 501 can reach different time scales such as microsecond or nanosecond. The delay between the to-be-measured electron beam pulses 501 obtained multiple times can be realized by controlling the switching delay of the grid 520 through the voltage signal output by the power supply 530.

[0130] Therefore, by the regulation method of the electron emission device provided in the present application, the switching speed of the grid 520 of the electron emission device 500 is adjusted according to the size stability of the electron beam, so that the pulse width of the to-be-measured electron beam pulse 501 emitted is more stable and reliable. By the regulation method of the electron emission device provided in the present application, the switching delay of the grid 520 of the electron emission device 500 is adjusted according to the position stability of the electron beam, so that the time jitter of the to-be-measured electron beam pulse 501 emitted is smaller, and is more stable and reliable.

[0131] Those skilled in the art can clearly understand that, for the convenience and brevity of description, only the above-mentioned division of each functional unit and module is exemplified, and in actual application, the above-mentioned functions can be completed by different functional units and modules according to needs, that is, the internal structure of the device is divided into different functional units or modules to complete all or part of the functions described above. Each functional unit and module in the embodiment can be integrated in one processing unit, or each unit can be physically present separately, or two or more units can be integrated in one unit. The above-mentioned integrated unit can be realized in the form of hardware or software. In addition, the specific names of each functional unit and module are only for easy distinction, and do not limit the protection scope of the present application. The specific working process of the units and modules in the above system can refer to the corresponding process in the foregoing method embodiments, which will not be repeated here.

[0132] In the above embodiments, the description of each embodiment has its own emphasis, and the parts not described or recorded in detail in a certain embodiment can be referred to the related description of other embodiments.

[0133] Those of ordinary skill in the art can realize that the units and algorithm steps of each example described in combination with the embodiments disclosed herein can be realized in electronic hardware or a combination of computer software and electronic hardware. Whether the functions are performed in hardware or software depends on the specific application and design constraints of the technical solution. A person skilled in the art can use different methods to implement the described functions for each specific application, but such implementation should not be considered beyond the scope of the present application.

[0134] In the embodiments provided in the present application, it should be understood that the disclosed apparatus / terminal device and method can be implemented in other ways. For example, the apparatus / terminal device embodiments described above are only schematic, and the division of the modules or units is only a logical function division, and there can be another division in actual implementation. For example, a plurality of units or components can be combined or integrated into another system, or some features can be ignored or not executed. In addition, the coupling or direct coupling or communication connection between the units shown or discussed can be indirect coupling or communication connection through some interface, device or unit, and can be electrical, mechanical or other forms.

[0135] The units described as separate components can or can not be physically separated, and the components shown as units can or can not be physical units, that is, they can be located in one place, or can be distributed on a plurality of network units. Part or all of the units can be selected according to actual needs to achieve the purpose of the embodiment.

[0136] In addition, each of the function units in each of the embodiments of the present application can be integrated in one processing unit, or each unit can be physically present separately, or two or more units can be integrated in one unit. The integrated unit can be realized in the form of hardware or in the form of a software function unit.

[0137] The integrated module / unit, if realized in the form of a software function unit and sold or used as an independent product, can be stored in a computer-readable storage medium. Based on this understanding, all or part of the processes in the above-mentioned embodiment methods can also be implemented by a computer program instructing related hardware to complete, and the computer program can be stored in a computer-readable storage medium. When the processor executes the computer program, the steps of each method embodiment described above can be implemented. The computer program includes computer program code, which can be in the form of source code, object code, executable files, or some intermediate forms, etc. The computer-readable medium can include any entity or device capable of carrying the computer program code, recording medium, U disk, mobile hard disk, magnetic disk, optical disk, computer memory, read-only memory (ROM), random access memory (RAM), electrical carrier signal, telecommunication signal, and software distribution medium, etc. It should be noted that the content included in the computer-readable medium can be appropriately increased or decreased according to the requirements of legislation and patent practice in the jurisdiction, for example, in some jurisdictions, according to legislation and patent practice, the computer-readable medium does not include electrical carrier signals and telecommunication signals.

[0138] The above-described embodiments are only used to illustrate the technical solutions of the present application, rather than limit them; although the present application has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that they can still modify the technical solutions recorded in the foregoing embodiments, or make equivalent replacements for some technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present application, and should be included in the protection scope of the present application.

Claims

1. An electron beam information detecting method characterized by comprising: The method comprises: emitting a to-be-tested electron beam pulse, the to-be-tested electron beam pulse passing through a preset variable magnetic field; a time scale of the preset variable magnetic field is set to correspond to a pulse width time scale of the to-be-tested electron beam pulse; detecting a pulse performance of the to-be-tested electron beam pulse passing through the preset variable magnetic field; the pulse performance is used to determine stability information of the electron beam under the pulse width time scale of the to-be-tested electron beam pulse.

2. The electron beam information detecting method according to claim 1, wherein Before the step of emitting the to-be-tested electron beam pulse, the method comprises: determining a reference beam spot center position when the to-be-tested electron beam pulse passes through a zero magnetic field; adjusting a time difference between emitting the to-be-tested electron beam pulse and triggering the preset variable magnetic field according to the reference beam spot center position until a to-be-tested beam spot center position after the to-be-tested electron beam pulse passes through the preset variable magnetic field is the same as the reference beam spot center position; emitting the to-be-tested electron beam pulse according to the adjusted time difference.

3. The electron beam information detecting method according to claim 1, wherein The step of the to-be-tested electron beam pulse passing through the preset variable magnetic field comprises: in a first time period, regulating the preset variable magnetic field according to a current waveform that linearly increases from a negative steady-state value to an overcharge value; in a second time period continuous with the first time period, regulating the preset variable magnetic field according to a current waveform that linearly decreases from the overcharge value to a positive steady-state value; the overcharge value is greater than the positive steady-state value.

4. The electron beam information detecting method according to claim 3, wherein Before the step of regulating the preset variable magnetic field according to the current waveform that linearly increases from the negative steady-state value in the first time period, the method comprises: determining a linear increase time and a linear decrease time of the current waveform according to the pulse width time scale of the to-be-tested electron beam pulse.

5. The electron beam information detecting method according to claim 4, wherein The step of determining the linear increase time and the linear decrease time of the current waveform according to the pulse width time scale of the to-be-tested electron beam pulse comprises: determining that a sum of the linear increase time and the linear decrease time is 10 times of the pulse width time scale.

6. The electron beam information detecting method according to claim 3, wherein The step of the to-be-tested electron beam pulse passing through the preset variable magnetic field further comprises: performing magnetic field regulation on the to-be-tested electron beam pulse according to the preset variable magnetic field.

7. The electron beam information detecting method according to claim 1, wherein The step of the pulse performance being used to determine the stability information of the electron beam under the pulse width time scale of the to-be-tested electron beam pulse comprises: determining pulse width information of the to-be-tested electron beam pulse according to beam spot length information in the pulse performance and reference beam spot length information; the reference beam spot length information is beam spot length information detected when the to-be-tested electron beam pulse passes through a zero magnetic field; determining size stability of the electron beam under the pulse width time scale of the to-be-tested electron beam pulse according to the pulse width information of the to-be-tested electron beam pulse.

8. The electron beam information detecting method according to claim 1, wherein The step of the pulse performance being used to determine the stability information of the electron beam under the pulse width time scale of the to-be-tested electron beam pulse further comprises: determining time jitter information of the to-be-tested electron beam pulse according to position jitter information of a beam spot center position in the pulse performance; determining position stability of the electron beam under the pulse width time scale of the to-be-tested electron beam pulse according to the time jitter information of the to-be-tested electron beam pulse.

9. An electron beam information detection system, characterized by comprising: The method comprises: A magnetic control module (10) is configured to apply a preset varying magnetic field to a region (101) through which an electron beam pulse to be measured passes; a time scale of the preset varying magnetic field is set to correspond to a pulse width time scale of the electron beam pulse to be measured; A detection module (20) is arranged apart from the magnetic control module (10) and is configured to detect a pulse performance of the electron beam pulse to be measured passing through the preset varying magnetic field; The pulse performance is used to determine stability information of the electron beam at the pulse width time scale of the electron beam pulse to be measured.

10. The electron beam information detection system of claim 9, wherein, The magnetic control module (10) triggers the preset varying magnetic field at a time difference from a time at which an electron emission device (500) emits the electron beam pulse to be measured; The time difference is used to determine, according to a reference beam spot center position when the electron beam pulse to be measured passes through a zero magnetic field and a measured beam spot center position after the electron beam to be measured passes through the preset varying magnetic field; The magnetic control module (10), the detection module (20) and the electron emission device (500) are arranged to be mutually time-synchronized.

11. The electron beam information detection system of claim 9, wherein, The magnetic control module (10) comprises a magnetic control power supply (110) and a magnetic field control module (120), and the magnetic control power supply (110) is connected to the magnetic field control module (120); The magnetic control power supply (110) is configured to send a magnetic field control signal to the magnetic field control module (120) according to a current waveform that linearly increases from a negative steady-state value to an overcharge value in a first time period and according to a current waveform that linearly decreases from the overcharge value to a positive steady-state value in a second time period continuous with the first time period; and the overcharge value is greater than the positive steady-state value. The magnetic field control module (120) is configured to apply the preset varying magnetic field to the region (101) through which the electron beam pulse to be measured passes according to the magnetic field control signal.

12. The electron beam information detection system of claim 11, wherein, The magnetic field control module (120) comprises a magnetic core structure (121) and a coil (122), and the coil (122) is arranged around a surface of the magnetic core structure (121); and the coil (122) is connected to the magnetic control power supply (110). The magnetic core structure (121) is a sheet-like or laminated structure.

13. The electron beam information detection system of claim 11, wherein, The system further comprises: A shell (40) that encloses a vacuum chamber (410), and an exterior of the vacuum chamber (410) is provided with the magnetic field control module (120); a thickness of the shell (40) ranges from 1 mm to 20 mm; In the vacuum chamber (410), the electron beam pulse to be measured passes through the preset varying magnetic field.

14. A method of regulating an electron emission device, characterized by, The system comprises: An electron emission device (500) is configured to emit an electron beam pulse to be measured, and the electron beam pulse to be measured passes through a preset varying magnetic field; A time scale of the preset varying magnetic field is set to correspond to a pulse width time scale of the electron beam pulse to be measured; A detection module (20) is arranged apart from the magnetic control module (10) and is configured to detect a pulse performance of the electron beam pulse to be measured passing through the preset varying magnetic field; According to the pulse performance, stability information of the electron beam at the pulse width time scale of the electron beam pulse to be measured is determined; According to the stability information, a control parameter of the electron emission device (500) is regulated.

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