Substrate processing apparatus

Abstract

Disclosed is a substrate processing apparatus including: a first chamber having a first internal pressure; a second chamber connected to the first chamber and having a second internal pressure greater than the first internal pressure; a transfer mechanism in the second chamber and configured to transfer the substrate; and a blower in the second chamber and configured to blow air toward the substrate.

Description

TECHNICAL FIELD

[0001] Embodiments relate to a substrate processing apparatus. More particularly, embodiments relate to a substrate processing apparatus and a method of processing a substrate. BACKGROUND

[0002] With the development of information technology, the importance of a display apparatus as a medium of connection between a user and information has been highlighted. As a result, the use of display apparatuses such as a liquid crystal display apparatus ("LCD"), an organic light emitting display apparatus ("OLED"), and a plasma display apparatus ("PDP") has increased.

[0003] A display apparatus is manufactured by forming various layers on a substrate. Some processes are performed in an atmospheric environment, while other processes are performed in a reduced pressure chamber, i.e., in a vacuum atmosphere. Due to pressure fluctuations during various processes, contamination caused by suspended particles can occur on the substrate. SUMMARY

[0004] The present disclosure provides a substrate processing apparatus with improved yield.

[0005] The present disclosure provides a method of processing a substrate with improved yield.

[0006] A substrate processing apparatus according to an embodiment includes a first chamber having a first internal pressure, a second chamber connected to the first chamber and having a second internal pressure greater than the first internal pressure, a transfer mechanism located in the second chamber and configured to move a substrate in a processing direction, and an air blower located in the second chamber and configured to blow air toward the substrate.

[0007] In an embodiment, in operation, the air can be obliquely blown toward the substrate in a direction between a second direction and a third direction, where the second direction is opposite to the processing direction.

[0008] In an embodiment, in operation, the air can be blown at an angle of about 30 degrees or more and about 50 degrees or less from a virtual normal line of the substrate.

[0009] In an embodiment, an air blowing pressure can be about 0.2 MPa or more and about 0.4 MPa or less.

[0010] In an embodiment, in operation, a downward air flow can be formed in the second chamber.

[0011] In an embodiment, a plurality of holes can be defined in a bottom surface of the second chamber, and in operation, foreign substances can be removed from the substrate by the air, pass through the plurality of holes, and be isolated from an internal space of the second chamber.

[0012] In an embodiment, the air can be clean dry air ("CDA").

[0013] In an embodiment, the substrate processing apparatus can further include a third chamber connected to the second chamber, and the foreign matter detector is located in the third chamber.

[0014] In an embodiment, the foreign matter detector can be a plurality of foreign matter detectors.

[0015] In an embodiment, the first chamber can be a chemical vapor deposition ("CVD") chamber.

[0016] A method of processing a substrate according to an embodiment includes: transferring a substrate from a first chamber having a first internal pressure to a second chamber having a second internal pressure greater than the first internal pressure; moving the substrate in a processing direction in the second chamber; and removing foreign matter from the substrate by blowing air on the substrate.

[0017] In an embodiment, the air can be obliquely blown toward the substrate in a direction between a second direction and a third direction, where the second direction is opposite to the processing direction.

[0018] In an embodiment, the air can be blown at an angle of about 30 degrees or more and about 50 degrees or less from a virtual normal line of the substrate.

[0019] In an embodiment, the air blowing pressure can be about 0.2 MPa or more and about 0.4 MPa or less.

[0020] In an embodiment, a downward air flow can be formed in the second chamber.

[0021] In an embodiment, the foreign matter can be removed from the substrate by the air, can pass through a plurality of holes defined in a bottom surface of the second chamber, and can be isolated from an internal space of the second chamber.

[0022] In an embodiment, the air can be clean dry air ("CDA").

[0023] In an embodiment, the method of processing a substrate can further include: after the foreign matter is removed from the substrate by blowing the air on the substrate, checking whether there is foreign matter remaining on the substrate.

[0024] In an embodiment, a first signal can be generated when the substrate is transported out of the first chamber, blowing the air can be started in response to the first signal, and blowing the air can be stopped after a selected time elapses.

[0025] In an embodiment, a chemical vapor deposition ("CVD") process can be performed in the first chamber.

[0026] The substrate processing apparatus according to embodiments can include a blower provided in a section in which the first internal pressure is changed to the second internal pressure. The blower can remove foreign substances from the substrate by blowing air. Accordingly, the yield can be improved.

[0027] Further, the substrate processing apparatus can blow air obliquely toward the substrate to maximize the effect of removing foreign substances.

[0028] Further, the substrate processing apparatus can maximize the effect of removing foreign substances by optimizing the blowing pressure of air. BRIEF DESCRIPTION OF DRAWINGS

[0029] The above and other exemplary embodiments, advantages, and features of the present disclosure will become more apparent by describing in detail exemplary embodiments thereof with reference to the attached drawings.

[0030] Figure 1 FIG. 1 is a view illustrating a substrate processing line according to embodiments.

[0031] Figure 2 FIG. 2 is a view illustrating an embodiment of a substrate processing apparatus.

[0032] Figure 3 FIG. 3 is a view illustrating an embodiment of a second processing chamber included in the substrate processing apparatus of FIG. 2. Figure 2

[0033] Figure 4 FIG. 4 is a view illustrating a processed object located in the second processing chamber of FIG. 3. Figure 3

[0034] Figure 5 FIG. 5 is a sectional view taken along line I-I' of FIG. 4. Figure 4

[0035] Figure 6 Figure 7 Figure 8 FIGS. 6, 7, 8, and 9 are views illustrating a blower and other features included in the substrate processing apparatus of FIG. 2. Figure 2

[0036] Figure 9 FIG. 10 is a block diagram of an embodiment of a method of processing a substrate.

[0037] Figure 10 Figure 11 Figure 12 Figure 13 FIGS. 11, 12, 13, and 14 are views illustrating a method of processing a substrate according to embodiments. DETAILED DESCRIPTION

[0038] ​​​​​​​​​Hereinafter, embodiments will be described in greater detail with reference to the accompanying drawings. The same reference numbers are used throughout the drawings to refer to the same or like parts, and redundant descriptions will be omitted.

[0039] Figure 1 is a view showing a substrate processing line according to an embodiment.

[0040] Reference Figure 1 , the substrate processing line 1 can include processing systems that can be arranged in a row along a processing direction PD. The substrate processing line 1 can include a first processing system 100, a second processing system 200, a third processing system 300, a fourth processing system 400, and a fifth processing system 500 that process an object OB. The processing direction PD can denote a direction along which the object OB moves to perform a substrate processing process. Each of the processing systems can be referred to as a processing apparatus, a portion of the processing systems can be referred to as a processing apparatus, or portions of two or more processing systems can be referred to as a processing apparatus.

[0041] In an embodiment, the object OB can include a substrate. For example, the substrate can be a mother substrate on which a plurality of cells are defined. A detailed description of the object OB will be given below with reference to Figure 4 and subsequent drawings. In the subsequent description, the object OB changes as the object OB moves through the substrate processing line 1. Thus, for example, when a processing apparatus adds a layer of material to the object OB, the layer of material can be considered to be included in the object OB.

[0042] The first processing system 100 can perform a backplane process. The backplane process can denote a process of forming a transistor (e.g., a transistor TR of Figure 5 ) included in the object OB. The transistor can be configured to turn on / off power of each of a plurality of pixels included in the object OB and to control brightness by supplying and adjusting a current. A detailed description of the backplane process will be given below with reference to Figure 4 and subsequent drawings.

[0043] The second processing system 200 can perform a deposition process. For example, the deposition process can denote a process of forming an organic material layer (e.g., an organic light-emitting layer EL of Figure 5 ). For example, the organic material layer can be configured to receive an electrical signal and emit colored light. A detailed description of the deposition process will be given below with reference to Figure 4 and subsequent drawings.

[0044] The deposition chamber can be plural. Thus, the object OB can be transferred into the second processing system 200 without delay in entering an empty chamber, and the deposition process can be performed.

[0045] The second processing system 200 can have a high vacuum (low pressure) environment, and the first processing system 100 can have a pressure environment (e.g., a chamber pressure) greater than that of the second processing system 200. For example, the chamber pressure environment can be about 760 torr. For example, the vacuum environment can have a pressure environment of about 50 torr or less.

[0046] A preliminary cleaning apparatus can be located between the first processing system 100 and the second processing system 200. The preliminary cleaning apparatus can remove a residual film, foreign matter, etc. on the object OB before performing a deposition process in the second processing system 200. Accordingly, yield can be improved.

[0047] The third processing system 300 can perform a packaging process. The packaging process can mean a process of forming a packaging layer (e.g., a packaging layer TFE) covering an organic material layer included in the object OB. Figure 5 For example, the packaging layer can cover the organic material layer to protect moisture, oxygen, etc. from permeating into the organic material layer. A detailed description of the packaging process will be given below with reference to Figure 4 and subsequent drawings.

[0048] The third processing system 300 can include a first deposition chamber 320, a printing chamber 340, and a second deposition chamber 360.

[0049] In the first deposition chamber 320, a first inorganic packaging layer can be formed on a substrate on which an organic material layer is formed. An organic packaging layer can be formed on the first inorganic packaging layer in the printing chamber 340. A second inorganic packaging layer can be formed on the organic packaging layer in the second deposition chamber 360. The inorganic packaging layer can prevent the permeation of moisture and air. The organic packaging layer can planarize the upper surface of the inorganic packaging layer located thereunder and ensure that the inorganic packaging layer located thereover is well seated when deposited.

[0050] The inorganic packaging layer can be formed by a deposition process in a high vacuum state. The organic packaging layer can be formed by a printing process in a high vacuum state.

[0051] The first deposition chamber 320, the printing chamber 340, and the second deposition chamber 360 can each be plural. Accordingly, the object OB can be transferred into the third processing system 300 without delay in entering an empty chamber, and a process of forming a packaging layer can be performed.

[0052] In an embodiment, the third processing system 300 can include a first chamber having a first internal pressure.

[0053] More specifically, in an embodiment, the first chamber can be a chemical vapor deposition ("CVD") chamber. However, the present disclosure is not limited thereto. For example, the first chamber can perform plasma-enhanced CVD ("PECVD"), low pressure CVD ("LPCVD"), metal organic CVD ("MOCVD"), etc.

[0054] The thin film can be any thin film that can be deposited by a chemical vapor deposition method. For example, the thin film can be a silicon-based thin film, however, the present disclosure is not limited thereto. For example, the first chamber can deposit a thin film on a substrate by various deposition methods, and the thin film can include various materials such as inorganic materials, organic materials, metals, etc.

[0055] An oven process can be performed in the fourth processing system 400. For example, the oven process can represent a process of annealing a substrate. Accordingly, device characteristics of a thin film transistor can be improved.

[0056] In an embodiment, the fourth processing system 400 can be connected to the third processing system 300. In other words, a second chamber included in the fourth processing system 400 can be connected to the first chamber. In an embodiment, a second internal pressure of the second chamber can be greater than the first internal pressure. For example, the second internal pressure can be a chamber pressure (i.e., an atmospheric pressure).

[0057] The fifth processing system 500 can be an inspection apparatus. For example, the inspection apparatus can include a foreign matter inspection apparatus using an optical system (i.e., an automatic optical inspection apparatus). For example, the fifth processing system 500 can perform an inspection process. The inspection process can be a process of inspecting a position, a length, a presence of foreign matter, etc. of a hole, a pattern, etc. in a manufacturing process of a display apparatus.

[0058] In an embodiment, the fifth processing system 500 can be connected to the fourth processing system 400. In other words, a third chamber included in the fifth processing system 500 can be connected to the second chamber. In an embodiment, a foreign matter detector can be located in the third chamber.

[0059] The foreign matter detector can include a stage, an image acquisition part, a controller, an image processor, and an output part.

[0060] The substrate can be seated and supported on the stage. For example, the stage can have a rectangular plate shape. For example, the stage can move upward, downward, leftward, or rightward according to a first control signal from the controller. However, the present disclosure is not limited thereto. For example, the shape and operation of the stage can be changed in various ways.

[0061] The image acquisition part can acquire an image by photographing a substrate disposed on the stage. The image acquisition part can irradiate light on the substrate according to a second control signal from the controller, and acquire an image by light reflected from the substrate. For example, light in an ultraviolet band (e.g., light having a wavelength of about 280 nanometers (nm) to about 400 nanometers (nm)) can be irradiated on the substrate. The light can cause light emitting devices included in the substrate to emit light. An image of the substrate can be obtained by light emitted from the light emitting devices.

[0062] The image acquisition part can also move upward, downward, left, or right according to a third control signal from the controller. For example, the movement of the image acquisition part can be synchronized with the movement of the stage. However, the disclosure is not limited thereto.

[0063] The controller can control the operations of the stage and the image acquisition part. For example, the controller can control the movement (e.g., upward, downward, left, or right movement) of the stage and the image acquisition part. Accordingly, the substrate on the stage and the image acquisition part can be aligned. For another example, the controller can control the image acquisition part to emit light. For another example, the controller can control the image acquisition part to acquire an image by light reflected from the substrate.

[0064] The controller can be hardware such as an electronic control unit ("ECU"), a microcontroller unit ("MCU"), software running on hardware, or a combination thereof.

[0065] The image processor can process the acquired image data. For example, the image processor can obtain a brightness characteristic value of each pixel using a difference between each gray value constituting the image data and a surrounding gray value.

[0066] The image processor can be implemented as an image processor that pre-processes image data.

[0067] The image processor can determine whether there is a defect by comparing the acquired image data with a previously stored reference. For example, the image processor can determine whether the substrate is defective (e.g., presence or absence of a foreign matter), etc.

[0068] The output part can receive inspection data for the substrate from the image processor, and display a defect inspection result, an inspection state of the substrate, etc. in real time.

[0069] However, the disclosure is not limited thereto, and some components of the foreign matter detector can be omitted or replaced. In addition, the foreign matter detector can further include other components.

[0070] In an embodiment, the foreign matter detector can be plural. Accordingly, the substrate transferred to the fifth process system 500 can be transferred to an empty foreign matter inspection apparatus without delay, and an inspection process can be performed.

[0071] However, this disclosure is not limited thereto. For example, Figure 1 The substrate processing line 1 may also include various components, or some of the components may be omitted or changed.

[0072] Figure 2 This is a view illustrating an embodiment of the substrate processing equipment.

[0073] Figure 2 The third processing system 300 is only schematically shown. Figure 1 The second sedimentation chamber 360.

[0074] refer to Figure 1 and Figure 2 The object OB can be sequentially moved to the third processing system 300, the fourth processing system 400, and the fifth processing system 500. As described above, the third processing system 300 can have a vacuum environment, and the fourth processing system 400 can have a chamber pressure environment.

[0075] In this implementation, the blower BL can be located in the section where the vacuum environment changes to a chamber pressure environment.

[0076] In the section where the vacuum environment is changed to a chamber pressure environment (i.e., the pressure change section), foreign objects can be suspended and can adhere to the object OB. A blower BL can supply air to the object OB to blow away the foreign objects. The following will refer to... Figure 6 , Figure 7 and Figure 8 Provide a detailed description of the hair dryer (BL).

[0077] Object OB can be transferred to the third processing system 300 via entry IN. For example, the third processing system 300 may include transfer chamber 12, multiple processing chambers (e.g., first processing chamber 14, second processing chamber 16, and third processing chamber 18), and pickup 46.

[0078] Picker 46 can be located in transfer chamber 12. Picker 46 can transport object OB to an empty processing chamber.

[0079] Multiple processing chambers can be connected to the central transfer chamber 12 and can be arranged in a cluster shape.

[0080] Multiple processing chambers may include a first processing chamber 14, a second processing chamber 16, and a third processing chamber 18. For example, if a deposition process is being performed in the first processing chamber 14, an object OB that has entered the inlet IN can be transferred to the empty second processing chamber 16, where the deposition process can be performed.

[0081] The object OB can be transported outside of the third processing system 300 through the outlet OU. The picker 46 can deliver the object OB for which the deposition has been completed to the outlet OU. For example, in the case where the deposition process is first completed in the first processing chamber 14, the object OB in the first processing chamber 14 can be first transported out through the outlet OU.

[0082] However, the present disclosure is not limited thereto. For example, the processing chamber can be one, and the position and shape of the picker 46 can be changed in various ways.

[0083] In an embodiment, the transfer mechanism TR2 can be located in the fourth processing system 400. The transfer mechanism TR2 can transfer the object OB.

[0084] As described above with reference to Figure 1 In an embodiment, the foreign matter detector can be plural. For example, the first inspection device IN1 and the second inspection device IN2 can be located in the fifth processing system 500. The standby zone SZ can be located between the first inspection device IN1 and the second inspection device IN2.

[0085] In an embodiment, the blower BL can be positioned in the fourth processing system 400 adjacent to the fifth processing system 500. More specifically, the blower BL can be positioned in the fourth processing system 400 adjacent to the standby zone SZ of the fifth processing system 500. Accordingly, even if there are plural foreign matter detectors, only one blower BL can be installed.

[0086] In the case of the substrate processing line according to the comparative embodiment, the blower BL is not included. In this case, a defect of the display device due to the foreign matter can be detected in the fifth processing system 500.

[0087] However, in the case of the substrate processing line 1 according to the embodiment, the blower BL can be located in the pressure fluctuation section. The blower BL can remove (by blowing) the foreign matter attached to the object OB due to the pressure fluctuation. Compared to the substrate processing line according to the comparative embodiment, by preventing the occurrence of the defect through the removal of the foreign matter, the yield can be improved.

[0088] Because the size of the particles of the foreign matter is small, the foreign matter can not be detected in the fifth processing system 500. In this case, a defect such as a dark spot can occur by forming an additional layer without detecting the foreign matter.

[0089] However, in the case of the substrate processing line 1 according to the embodiment, the blower BL can be included in the pressure fluctuation section, and the blower BL can remove (by blowing) the foreign matter attached to the object OB, and the defect due to the foreign matter can be prevented. Accordingly, the reliability of the display device can be improved.

[0090] Figure 3 is a view showing a second processing chamber included in a substrate processing line of Figure 1 Figure 4 is a view showing an object located in a second processing chamber of Figure 3

[0091] Figure 2 The first processing chamber 14, the second processing chamber 16, and the third processing chamber 18 of the substrate processing line 10 can have substantially the same or similar components. Accordingly, hereinafter, the following description will focus on the second processing chamber 16.

[0092] Referring to Figure 3 and Figure 4 , the second processing chamber 16 can include a chamber CB, a stage ST, a deposition source SC, and a mask MA.

[0093] The second processing chamber 16 can be used in a manufacturing process of a display device. For example, the second processing chamber 16 can be used in a deposition process during a manufacturing process of a display device to form a thin film on an object OB. The object OB can include a substrate. For example, a thin film can be formed on a substrate by a deposition process using the second processing chamber 16.

[0094] The substrate can denote a mother substrate including a display device being manufactured. The substrate can also include at least one layer included in the display device. For example, the substrate can also include at least one layer included in the display device: an inorganic layer, an organic layer, or a metal layer.

[0095] The chamber CB can provide an inner space in which a deposition process can be performed. For example, the chamber CB can be a reaction chamber including a reaction space therein. Various components that can be used in a deposition process can be located in the chamber CB. In a case where a deposition process is performed, a temperature within the chamber CB can be relatively high. Accordingly, in a case where a deposition process is performed, heat can be applied to the components located in the chamber CB.

[0096] The stage ST can be located in the chamber CB. The stage ST can be parallel to a plane defined by a first direction and a second direction intersecting the first direction. For example, the second direction can be perpendicular to the first direction. The substrate can be located on the stage ST. The stage ST can support and fix the substrate.

[0097] The stage ST can move in the chamber CB. For example, the stage ST can move up and down in response to a load time, an unload time, and a pre-sequence time of a deposition process time of the substrate, etc. In an embodiment, the stage ST can heat and maintain the substrate at a selectable temperature. For example, the stage ST can include or be connected to a heater. In addition, the stage ST can be connected to a power source to function as an electrode.

[0098] ​​The deposition source SC can be located on the stage ST. The deposition source SC can be spaced apart from the stage ST in a third direction that crosses each of the first direction and the second direction. For example, the third direction can be perpendicular to each of the first direction and the second direction. The deposition source SC can supply a deposition material in the chamber CB. Further, the deposition source SC can be connected to a power source and function as an electrode.

[0099] In an embodiment, the deposition source SC can supply a gas in the chamber CB. For example, the gas can include a reactive gas, a cleaning gas, etc. For example, in a case where a plasma is generated between the deposition source SC and the substrate in the chamber CB, the reactive gas can chemically react with energy of the plasma and be deposited on the substrate, and the cleaning gas can chemically react with the energy of the plasma and clean components within the chamber CB.

[0100] The mask MA can be located above the stage ST. For example, the mask MA can be located between the stage ST and the deposition source SC. The deposition material provided from the deposition source SC can pass through the mask MA and be deposited on the substrate. The mask MA can have a pattern, and the deposition material can be deposited on the substrate in a pattern corresponding to the pattern of the mask MA. The mask MA can include a metal. For example, the mask MA can include an alloy of nickel (“Ni”) and iron (“Fe”). For example, the mask MA can include invar. However, the disclosure is not limited thereto.

[0101] The mask MA can be opposite the substrate. For example, the mask MA and the substrate can be respectively parallel to a plane defined by the first direction and the second direction, and the mask MA can be adjacent to the substrate in the third direction.

[0102] In an embodiment, the mask MA can define a plurality of openings OP arranged repeatedly along the first direction and the second direction. Each of the openings OP can penetrate the mask MA in a thickness direction (i.e., in the third direction). The thin film can be formed on the substrate in a pattern corresponding to a pattern of the openings OP. A width of the openings OP can be determined in response to a pattern to be deposited.

[0103] The substrate can define a plurality of cell areas CA on which a thin film is deposited. A pattern of the cell areas CA can correspond to a pattern of the openings OP. The cell areas CA can be repeatedly arranged along the first direction and the second direction. The cell areas CA can respectively correspond to the openings OP. Each of the cell areas CA can correspond to a display device being manufactured.

[0104] In Figure 3 In an embodiment, the mask MA is shown as being spaced apart from the substrate by a selectable distance, however, the disclosure is not limited thereto. For example, the mask MA can be positioned in contact with the substrate.

[0105] Further, in Figure 4In the diagram, the opening OP and the cell region CA are shown as having rectangular shapes in a plan view; however, this disclosure is not limited thereto. For example, the shapes of the opening OP and the cell region CA may vary depending on the shape of the display device being manufactured.

[0106] Figure 1 The substrate processing line 1 may also include various components, or some of the components may be omitted or changed. In the following text, the substrate processing line 1 may also be referred to as substrate processing equipment 1.

[0107] exist Figure 3 In this context, the second processing chamber 16 is described as a horizontal deposition apparatus; however, the second processing chamber 16 can also be a vertical deposition apparatus. In this case, the stage ST, mask MA, and deposition source SC included in the vertical deposition apparatus can be arranged in a direction intersecting the direction of gravity (e.g., a direction parallel to a third direction).

[0108] Figure 4 yes Figure 3 A top view of the object. For example... Figure 4 As shown, the substrate SUB can define a cell region CA that is repeatedly arranged along a first direction and a second direction.

[0109] In an implementation, the substrate SUB can define cell regions CA arranged in i rows and j columns (where i and j are natural numbers greater than 0). For example, the substrate SUB can define j cell regions CA arranged along a first direction in each row and i cell regions CA arranged along a second direction in each column. The substrate SUB can be defined by i times j cell regions CA.

[0110] In an implementation, an inspection region TE may be defined within a substrate SUB. For example, the inspection region TE may be located in an outer portion of the substrate SUB (e.g., an outer portion of the cell region CA). For example, the inspection region TE may have dimensions of approximately 10 millimeters by approximately 12 millimeters. However, this disclosure is not limited thereto.

[0111] Figure 5 It is along Figure 4 A sectional view taken from line I-I'.

[0112] Figure 4 The substrate SUB can be used to form multiple display devices and can be cut into individual display devices (cutting process). For example, Figure 5 It is an illustrative representation of the use Figure 1 A cross-sectional view of a display device manufactured by substrate processing equipment 1.

[0113] refer to Figure 4 and Figure 5In the cell region CA and the inspection region TE, the display device may include a base substrate BSUB, a buffer layer BFR, a transistor TR, a gate insulating layer GI, an interlayer insulating layer ILD, a via insulating layer VIA, a light-emitting device LE, a pixel defining layer PDL, and a packaging layer TFE. For example, the cell region CA may be the area used to form the individual display devices, and the inspection region TE may be the area used to check for abnormalities during the process. The inspection region TE may be omitted.

[0114] The transistor TR may include an active pattern ACT, a gate electrode GE, a first electrode SD1, and a second electrode SD2. The light-emitting device LE may include a lower electrode PE, a light-emitting layer EL, and a upper electrode CE. As described above, the transistor can be fabricated using a backplane process.

[0115] The base substrate BSUB can include transparent or opaque materials. For example, the base substrate BSUB can include plastic, glass, quartz, etc. For example, the base substrate BSUB can include polyimide. These can be used alone or in combination with each other.

[0116] A buffer layer (BFR) can be deposited on the base substrate (BSUB). The BFR prevents metal atoms, impurities, etc., from diffusing into the transistor (TR). Furthermore, in cases where the surface of the base substrate (BSUB) is uneven, the BFR can improve the surface flatness of the BSUB. The BFR can comprise inorganic materials, such as silicon oxide (SiO2). x ), silicon nitride ("SiN") x ), silicon oxynitride ("SiO2") x N y These can be used individually or in combination with each other.

[0117] An active pattern ACT can be disposed on the buffer layer BFR. The active pattern ACT can include a source region, a drain region, and a channel region between the source and drain regions. The active pattern ACT can include silicon semiconductor materials or oxide semiconductor materials. Examples of silicon semiconductor materials include amorphous silicon, polycrystalline silicon, etc. Examples of oxide semiconductor materials include indium gallium zinc oxide (“IGZO”), indium tin zinc oxide (“ITZO”), etc. These can be used individually or in combination with each other. The active pattern ACT can serve as a path through which current can pass under the influence of a voltage applied to the gate electrode GE.

[0118] The gate insulating layer GI can be disposed on and cover the active pattern ACT. The gate insulating layer GI can include inorganic materials such as silicon oxide, silicon nitride, and silicon oxynitride. These can be used individually or in combination. The gate insulating layer GI can insulate between the gate electrode GE and the active pattern ACT.

[0119] The gate electrode GE can be disposed on the gate insulating layer GI, and the gate electrode GE can overlap with the channel region of the active pattern ACT in a planar view. The gate electrode GE can include metals, alloys, conductive metal nitrides, conductive metal oxides, transparent conductive materials, etc. These can be used individually or in combination with each other. For example, the gate electrode GE can be controlled so that current flows or does not flow in the active pattern ACT.

[0120] The interlayer insulating layer (ILD) can be disposed on the gate electrode GE and can cover the gate electrode GE. The ILD can include inorganic materials such as silicon oxide, silicon nitride, and silicon oxynitride. These can be used individually or in combination with each other.

[0121] The first electrode SD1 and the second electrode SD2 can be disposed on the interlayer insulating layer (ILD). The first electrode SD1 can be connected to the source region of the active pattern ACT through a first contact hole penetrating the gate insulating layer (GI) and the interlayer insulating layer (ILD). Similarly, the second electrode SD2 can be connected to the drain region of the active pattern ACT through a second contact hole penetrating the gate insulating layer (GI) and the interlayer insulating layer (ILD). For example, each of the first electrode SD1 and the second electrode SD2 can include a metal, an alloy, a conductive metal nitride, a conductive metal oxide, a transparent conductive material, etc. These can be used individually or in combination with each other.

[0122] Therefore, the transistor TR, including the active pattern ACT, the gate electrode GE, the first electrode SD1, and the second electrode SD2, can be disposed on the base substrate BSUB.

[0123] The via insulating layer (VIA) can be disposed on the interlayer insulating layer (ILD) and can cover the first electrode SD1 and the second electrode SD2. The via insulating layer (VIA) can include organic materials such as phenolic resin, acrylic resin, polyimide resin, polyamide resin, silicone resin, epoxy resin, etc. These can be used alone or in combination with each other.

[0124] The lower electrode PE can be disposed on the via insulating layer VIA. The lower electrode PE can be connected to the second electrode SD2 through contact holes penetrating the via insulating layer VIA. The lower electrode PE can include metals, alloys, conductive metal nitrides, conductive metal oxides, transparent conductive materials, etc. These can be used alone or in combination with each other. For example, the lower electrode PE can be used as an anode.

[0125] The pixel defining layer (PDL) can be disposed on the via insulating layer (VIA) and can cover at least a portion of the lower electrode (PE). An opening can be defined in the pixel defining layer (PDL) to expose at least a portion of the upper surface of the lower electrode (PE). The pixel defining layer (PDL) can include inorganic or organic materials. For example, the pixel defining layer (PDL) can include organic materials such as epoxy resin, silicone resin, etc. In another embodiment, the pixel defining layer (PDL) can include an inorganic or organic material comprising a black light-blocking material.

[0126] The light-emitting layer (EL) can be disposed on the lower electrode (PE). The EL can be disposed on the lower electrode (PE) exposed by the pixel-defining layer (PDL). The EL can include organic materials. For example, an organic EL can include organic materials that emit red, green, and blue light. However, this disclosure is not limited thereto.

[0127] The upper electrode CE can be disposed on the light-emitting layer EL, and the upper electrode CE can be a plate-shaped electrode. The upper electrode CE can include metals, alloys, conductive metal nitrides, conductive metal oxides, transparent conductive materials, etc. These can be used individually or in combination with each other. For example, in an embodiment, the upper electrode CE can operate as a cathode.

[0128] On the other hand, auxiliary layers can be further formed above and below the organic light-emitting layer (EL). The auxiliary layer can be a layer that improves the luminous efficiency of the organic EL. For example, the auxiliary layer may include an electron injection layer, an electron transport layer, a hole injection layer, and a hole transport layer. For example, when holes injected from the lower electrode (PE) and electrons injected from the upper electrode (CE) recombine in the EL, colored light can be emitted.

[0129] Therefore, the light-emitting device LE, comprising the lower electrode PE, the light-emitting layer EL, and the upper electrode CE, can be disposed on the base substrate BSUB. The light-emitting device LE can be electrically connected to the transistor TR.

[0130] The encapsulation layer TFE can be disposed on the upper electrode CE. The encapsulation layer TFE can protect the light-emitting device LE from external oxygen, moisture, etc. In other words, in an embodiment, the light-emitting device LE can be disposed between the base substrate BSUB and the encapsulation layer TFE, and the light-emitting device LE can be protected from external oxygen, moisture, etc. by the encapsulation layer TFE.

[0131] In this embodiment, the encapsulation layer TFE may include at least one inorganic layer and at least one organic layer. For example, the encapsulation layer TFE may have a structure in which inorganic and organic layers are stacked alternately.

[0132] The encapsulation layer TFE may include a first encapsulation layer (e.g., a first inorganic encapsulation layer IL1), a second encapsulation layer (e.g., an organic encapsulation layer OL disposed on the first inorganic encapsulation layer IL1) and a third encapsulation layer (e.g., a second inorganic encapsulation layer IL2 disposed on the organic encapsulation layer OL).

[0133] The first inorganic encapsulation layer IL1 and the second inorganic encapsulation layer IL2 may include inorganic materials such as silicon oxide, silicon nitride, and silicon oxynitride. These can be used individually or in combination with each other.

[0134] The organic encapsulation layer OL can include organic materials such as acrylic resin, polyimide resin, epoxy resin, etc. These can be used alone or in combination with each other. The organic encapsulation layer OL can fill defects in the first inorganic layer or can be formed to planarize the upper surface. Furthermore, as the moisture permeation path (e.g., the path through which air, moisture, etc., permeate into the organic light-emitting layer EL) becomes longer, the light-emitting properties of the organic light-emitting layer EL can be better preserved.

[0135] In the implementation, the first inorganic encapsulation layer IL1, the organic encapsulation layer OL, and the second inorganic encapsulation layer IL2 can be achieved by using components including... Figure 1 The substrate is formed by the third processing system 300 in the substrate processing equipment 1.

[0136] As described above, an inorganic encapsulation layer (e.g., a first inorganic encapsulation layer IL1) can be formed on an organic light-emitting layer EL, and an organic encapsulation layer OL can be formed on an inorganic encapsulation layer; however, this disclosure is not limited thereto. For example, an organic encapsulation layer OL can be formed on an organic light-emitting layer EL.

[0137] When the substrate SUB on which the upper electrode CE is formed passes through includes Figure 1 When the third processing system 300 in the substrate processing equipment 1 is used, the first inorganic encapsulation layer IL1, the organic encapsulation layer OL, and the second inorganic encapsulation layer IL2 can be formed sequentially.

[0138] Figure 6 , Figure 7 and Figure 8 It is shown that it includes Figure 2 A view of the blower and other features in the substrate processing equipment.

[0139] refer to Figure 6 and Figure 7 To maximize the removal of foreign matter FO from the substrate GL, the air blowing angle and air blowing pressure (i.e., air pressure) provided by the blower BL can be adjusted. Here, the substrate GL can correspond to... Figure 2 , Figure 3 and Figure 4 The object OB.

[0140] In this implementation, the air can be clean, dry air (“CDA”). For example, because Figure 1 The fourth processing system 400 is in a pressurized environment, so the air may include clean, dry air to prevent the risk of asphyxiation. However, this disclosure is not limited thereto. For example, the air may be various gases such as nitrogen.

[0141] In one embodiment, air can be blown obliquely toward the substrate (i.e., substrate GL) in the opposite direction to its direction of travel (i.e., processing direction PD). In another embodiment, air can be blown at an angle of about 30 degrees or greater and about 50 degrees or less to the virtual normal SL of the substrate GL.

[0142] When the substrate GL moves to the right, air can be blown obliquely (to the left) toward the substrate GL at an angle between the second direction DR2 and the third direction DR3. The second direction DR2 can be perpendicular to the virtual normal SL of the substrate GL and can be opposite to the direction in which the substrate GL moves (i.e., the direction in which the substrate GL moves via the transfer mechanism TR2). The third direction DR3 can be parallel to the virtual normal SL of the substrate GL and can be in the direction of gravity.

[0143] The air blowing angle AN can be defined as the angle from the virtual normal SL of the substrate GL to the air blown between the second direction DR2 and the third direction DR3. For example, when air is provided along the second direction DR2, the air blowing angle AN can be defined as approximately 90 degrees, and when air is provided along the third direction DR3, the air blowing angle AN can be defined as approximately 0 degrees.

[0144] If the air blowing angle AN is less than about 30 degrees or greater than about 50 degrees, the uniformity of the velocity supplied to the entire surface of the substrate GL may be reduced. For example, excessive air may be supplied to some areas of the substrate GL, while insufficient air may be supplied to other areas. Therefore, the effectiveness of removing foreign matter FO may be reduced.

[0145] The air blowing angle AN can be approximately 40 degrees. In this case, by uniformly supplying air to the entire surface of the substrate GL, the effectiveness of removing foreign matter FO can be improved.

[0146] However, this disclosure is not limited thereto. For example, depending on other process conditions, air can be blown at an angle ranging from about 0 degrees to about 90 degrees with respect to the virtual normal SL of the substrate GL.

[0147] In an implementation, the air blowing pressure may be about 0.2 MPa or greater and about 0.4 MPa or less.

[0148] When the air blowing pressure is less than about 0.2 MPa, the stagnant airflow becomes stuck at the bottom of the transfer mechanism TR2, making it difficult to form a downward airflow DF. Furthermore, air may not be supplied to one end of the substrate GL. Therefore, the effectiveness of foreign matter removal FO may be reduced.

[0149] On the other hand, when the air blowing pressure exceeds approximately 0.4 MPa, eddies may be generated at the bottom of the transfer mechanism TR2, thereby increasing the flight distance of the foreign matter FO. The dispersed foreign matter FO may re-adhere to the substrate GL and cause contamination. Therefore, the effectiveness of foreign matter FO removal may be reduced.

[0150] The air blowing pressure can be approximately 0.25 MPa. Under these conditions, there will be no stagnant airflow or eddies at the bottom, and the foreign matter FO will be removed by the downward airflow DF, thereby improving the effectiveness of foreign matter FO removal.

[0151] As described above, the blower BL can be located in the pressure fluctuation range. In an embodiment, in a substrate processing apparatus (e.g., Figure 1 The substrate processing equipment 1) includes multiple inspection devices (e.g., Figure 2 In the case of the first inspection device IN1 and the second inspection device IN2, the blower BL can be located at the entrance IN of the waiting area SZ, and the substrate GL waits in the waiting area SZ before being input to multiple inspection devices. The substrate GL can be transferred from the fourth processing system 400 to the fifth processing system 500 through the entrance IN. Because the blower BL is located at the entrance IN, even if there are multiple inspection devices, only one blower BL can be installed.

[0152] In one embodiment, a downward airflow DF can be formed in the second chamber. In another embodiment, a plurality of holes TH can be defined on the bottom surface CBS of the second chamber, and foreign matter (i.e., foreign matter FO) that is removed from the substrate (i.e., substrate GL) by air and passes through the plurality of holes TH can be isolated from the interior space S1 of the second chamber.

[0153] Based on the bottom surface CBS of the second chamber, the foreign object isolation space S2 can be positioned on the third direction DR3, and the internal space S1 of the second chamber can be positioned in the opposite direction to the third direction DR3. The internal space S1 and the foreign object isolation space S2 can be spatially separated from each other.

[0154] A negative pressure can be applied to the second chamber. Therefore, the foreign matter FO trapped in the foreign matter isolation space S2 can not return to the inner space S1 of the second chamber. Thus, contamination of the substrate GL due to the dispersion of the foreign matter FO can be prevented.

[0155] refer to Figure 8The blower BL can have a shape that defines multiple holes HO in the bottom surface BS. The diameter, number, spacing, etc. of the multiple holes HO can be changed in various ways.

[0156] Each of the multiple orifices HO of the blower BL can also include a flow rate controller. Therefore, the air delivery pressure supplied from each of the multiple orifices HO can be controlled individually.

[0157] As an application of the substrate processing equipment according to the implementation method (e.g., Figure 1 As a result of the substrate processing equipment 1), the kill ratio of substrates GL identified as defective was reduced by approximately 15%. The yield can be improved by blowing out and removing foreign matter by the blower BL, and the reliability of the display device can be further improved by performing subsequent processes after removing foreign matter.

[0158] Figure 9 This is a block diagram illustrating an implementation method for processing a substrate. Figure 10 , Figure 11 , Figure 12 and Figure 13 This is a view illustrating a method for processing a substrate according to an embodiment.

[0159] In the following text, references above will be omitted or simplified. Figure 1 , Figure 2 , Figure 3 , Figure 4 , Figure 5 , Figure 6 , Figure 7 and Figure 8 Any repeated detailed description of components identical or similar to those of the substrate processing equipment 1 described herein.

[0160] refer to Figure 1 , Figure 2 , Figure 3 , Figure 4 , Figure 5 , Figure 6 , Figure 7 , Figure 8 and Figure 9 The method 2 for processing a substrate according to the embodiment may include: processing the substrate (e.g., ...) Figure 2 , Figure 3 and Figure 4 Object OB Figure 6 and Figure 7The substrate (GL) is transferred from a first chamber having a first internal pressure (e.g., a first chamber included in a third processing system 300) to a second chamber having a second internal pressure greater than the first internal pressure (e.g., a second chamber included in a fourth processing system 400) (S100); the substrate is moved in the processing direction PD in the second chamber (S200); foreign matter (e.g., foreign matter FO) is removed from the substrate by blowing air onto the substrate (S300); and the substrate is transferred out of the second chamber (S400). The method 2 for processing the substrate may further include: after transferring the substrate out of the second chamber, checking the substrate for the presence of foreign matter.

[0161] refer to Figure 9 and Figure 10 The substrate GL can be transferred from a first chamber with a first internal pressure (e.g., the first chamber included in the third processing system 300) to a second chamber with a second internal pressure (e.g., the second chamber included in the fourth processing system 400) (S100).

[0162] As described above, the second internal pressure can be greater than the first internal pressure. For example, the first internal pressure can be a vacuum, and the second internal pressure can be a chamber pressure. Therefore, foreign matter can adhere to the substrate GL.

[0163] In this embodiment, a chemical vapor deposition process can be performed in the first chamber. Therefore, an encapsulation layer (encapsulation process) can be formed within the substrate GL.

[0164] After the packaging process is completed, the substrate GL can be transported out from the third processing system 300. The transported substrate GL can be transferred to the fourth processing system 400, where a baking process can be performed.

[0165] As described above, after forming the transistor TR, preliminary cleaning can be performed before inputting into the third processing system 300 to form the light-emitting device LE. Through preliminary cleaning, foreign matter on the substrate GL can be initially removed before forming the light-emitting device LE.

[0166] In the substrate processing method according to the comparative embodiment, no secondary cleaning is performed when the substrate is transferred from the third processing system 300 to the fourth processing system 400 (i.e., in the pressure fluctuation section). When the vacuum environment changes to a chamber pressure environment, foreign matter or the like may adhere to the substrate GL, causing contamination. If subsequent processes are performed without removing the foreign matter, a subsequent layer may form on the foreign matter. Foreign matter buried in the subsequent layer may manifest as defects such as dark spots on the display device. Therefore, the reliability of the display device may be reduced.

[0167] However, in method 2 where the substrate is processed, foreign matter can be removed using a blower BL. Therefore, the aforementioned contamination can be prevented. Furthermore, the reliability of the display device can be improved.

[0168] refer to Figure 9 , Figure 10 and Figure 11 The substrate can be transferred in the processing direction (e.g., the first direction DR1) in the second chamber (e.g., the second chamber included in the fourth processing system 400) (S200).

[0169] The substrate GL can be moved in the second chamber via the transfer mechanism TR2. During this process, air can be blown from the blower BL just before the substrate GL is transferred to the second chamber, and air can be continuously blown from the blower BL as the substrate GL moves through the second chamber. However, this disclosure is not limited to this. For example, air can be blown from the blower BL immediately after the substrate GL is transferred.

[0170] refer to Figure 7 , Figure 9 and Figure 12 It can remove foreign objects (e.g., foreign object FO) on the substrate GL (S300).

[0171] In one embodiment, foreign matter FO can be removed by blowing air onto the substrate GL. In another embodiment, air can be blown at an angle towards the substrate GL in a direction opposite to the processing direction PD. In yet another embodiment, air can be blown at an angle of approximately 30 degrees or greater and approximately 50 degrees or less to the virtual normal SL of the substrate GL. Furthermore, in another embodiment, air can be blown at a pressure of approximately 0.2 MPa or greater and approximately 0.4 MPa or less. Therefore, foreign matter FO on the substrate GL can be effectively removed. However, this disclosure is not limited thereto. The air blowing angle, air blowing pressure, etc., can be varied in various ways.

[0172] In this embodiment, the air may be clean, dry air (“CDA”). However, this disclosure is not limited thereto. The type of air can be changed in various ways.

[0173] In this embodiment, a downward airflow DF can be formed in the second chamber. In this embodiment, foreign matter FO removed from the substrate GL by air can pass through multiple holes TH defined on the bottom surface CBS of the second chamber and can be isolated from the internal space S1 of the second chamber. Therefore, contamination of the substrate GL due to the re-dispersion of foreign matter FO can be prevented.

[0174] In one implementation, a first signal SI1 may be generated when the substrate GL is transported out of the third processing system 300 (e.g., a first chamber included in the third processing system 300). In response to the first signal SI1, air may be blown from the blower BL.

[0175] In this embodiment, as the substrate GL passes from the fourth processing system 400 through the inlet IN to the fifth processing system 500, air can be continuously blown onto the substrate GL. Therefore, the adhesion of foreign matter due to the movement of the substrate GL can be prevented.

[0176] In one implementation, air blowing can be stopped after an optional period of time. In another implementation, air can be blown until the substrate GL is transported from the fourth processing system 400 and completely transferred to the fifth processing system 500. For example, air blowing can be stopped after approximately 7 seconds while the substrate GL is waiting in the fourth processing system 400 for approximately 3 seconds. However, this disclosure is exemplary, and the air blowing time can be varied in various ways. Furthermore, as another example, when the substrate GL is transported from the fourth processing system 400, the air can generate a second signal S12. In response to the second signal S12, air blowing from the blower BL can be stopped.

[0177] refer to Figure 9 and Figure 13 The substrate GL can be transported out from the fourth processing system 400 (S400).

[0178] As described above, after the substrate GL is positioned in the waiting area SZ in the fifth processing system 500, the substrate GL can be transferred to an empty inspection device (e.g., Figure 2 (either of the first inspection device IN1 and the second inspection device IN2). The inspection device can be used to check whether there are foreign objects on the substrate GL.

[0179] By using a blower BL to initially remove foreign matter from the substrate GL before it enters the inspection apparatus, the defect rate of the substrate GL in the inspection apparatus can be further reduced (i.e., defects caused by foreign matter can be reduced and the yield can be improved). Furthermore, by using the blower BL to remove foreign matter from the substrate GL, defects caused by foreign matter can be prevented (i.e., the reliability of the display device can be further improved).

[0180] The object OB produced by the substrate processing line 1 according to the embodiment can be applied to computers, laptops, cellular phones, smartphones, smart tablets, PMPs, PDAs, MP3 players, etc.

[0181] Although a display device and a method of manufacturing the same according to embodiments have been described with reference to the accompanying drawings, the embodiments shown are examples and can be modified and altered by those skilled in the art without departing from the spirit of the technology described in the appended claims.

Claims

1. Substrate processing equipment, including: The first chamber has the first internal pressure; A second chamber, connected to the first chamber and having a second internal pressure greater than the first internal pressure; A transfer mechanism, located in the second chamber and configured to move the substrate in the processing direction; as well as A blower, located in the second chamber, is configured to blow air onto the substrate.

2. The substrate processing equipment according to claim 1, wherein, During operation, air is blown obliquely toward the substrate in a direction between a second direction and a third direction, wherein the second direction is opposite to the processing direction.

3. The substrate processing equipment according to claim 2, wherein, During operation, the air is blown at an angle of 30 degrees or greater and 50 degrees or less to the virtual normal of the substrate.

4. The substrate processing equipment according to claim 1, wherein, The air blowing pressure is 0.2 MPa or greater and 0.4 MPa or less.

5. The substrate processing equipment according to claim 1, wherein, During operation, a downward airflow is formed in the second chamber.

6. The substrate processing apparatus according to claim 1, wherein, A plurality of holes are defined in the bottom surface of the second chamber, and During operation, foreign matter is removed from the substrate by the air, passes through the plurality of holes, and is isolated from the interior space of the second chamber.

7. The substrate processing equipment according to claim 1, wherein, The air is clean and dry.

8. The substrate processing equipment according to claim 1, wherein, The substrate processing equipment also includes: The third chamber is connected to the second chamber, and the foreign object detector is located inside the third chamber.

9. The substrate processing apparatus according to claim 8, wherein, The foreign object detector is a plurality of foreign object detectors.

10. The substrate processing apparatus according to claim 1, wherein, The first chamber is a chemical vapor deposition chamber.

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