Grinding wheel, grinding equipment and wafer manufacturing method

Abstract

The invention provides a grinding wheel, grinding equipment and a wafer manufacturing method. The grinding wheel comprises a main body part and a grinding part, the top face of the grinding part is a plane perpendicular to the axis of the main body part, a first grinding face inclining in the direction away from the top face of the grinding part and a second grinding face inclining in the direction close to the top face of the grinding part are formed on the bottom face of the grinding part, one end of the second grinding face is connected with the first grinding face, and the other end of the second grinding face is connected with the main body part. The distance from the end, close to the body part, of the first grinding face to the top face of the grinding part is larger than the distance from the end, close to the body part, of the second grinding face to the top face of the grinding part. The first grinding surface and the reference plane form a first acute angle, the second grinding surface and the reference plane form a second acute angle, the second acute angle is smaller than the first acute angle, and the reference plane is perpendicular to the axis of the main body part. The grinding wheel is used for grinding an original wafer in the wafer manufacturing process so as to remove the edge, and the edge quality of the manufactured wafer can be improved through the application of the grinding wheel.

Description

TECHNICAL FIELD

[0001] The present application belongs to the technical field of semiconductor, and particularly relates to a grinding wheel, a grinding device and a wafer manufacturing method. BACKGROUND

[0002] SOI (Silicon on Insulator) technology realizes the medium isolation of the components in integrated circuits by introducing a buried layer of silicon dioxide between the silicon substrate and the top layer of silicon thin film, completely eliminates the parasitic latch effect of bulk silicon SMOS circuit, and also significantly reduces the parasitic capacitance, improves the integration density and running speed. It has the core advantages of small short channel effect and simple process, and is particularly suitable for low-voltage and low-power circuits, and is one of the mainstream technologies of deep submicron integrated circuits.

[0003] BESOI (Backside Etching) is a technology for preparing SOI material by low-temperature bonding a device wafer with a support wafer and then etching or grinding the device layer from the back. Its core feature is that it can obtain a top layer of silicon thin film with good quality. Grinding the device layer to achieve edge removal is one of the important steps of BESOI technology. However, in the prior art, when the device layer is ground, edge collapse anomalies often occur within 1.5 mm of the edge of the device layer, resulting in defects such as holes and pits in the edge of the device layer. SUMMARY

[0004] The present application aims to provide a grinding wheel, a grinding device and a wafer manufacturing method to solve the above technical problems.

[0005] To achieve the above-mentioned purpose, the present application provides a grinding wheel, comprising: a cylindrical main body part; and a grinding part provided on the outer peripheral surface of the main body part; the top surface of the grinding part is a plane perpendicular to the axis of the main body part, the bottom surface of the grinding part is formed with a first grinding surface inclined towards the direction away from the top surface of the grinding part and a second grinding surface inclined towards the direction close to the top surface of the grinding part and connected at one end with the first grinding surface, the other end of the second grinding surface is connected with the main body part, the distance from the end of the first grinding surface close to the main body part to the top surface of the grinding part is greater than the distance from the end of the second grinding surface close to the main body part to the top surface of the grinding part; the first grinding surface has a first acute angle with a reference plane, the second grinding surface has a second acute angle with the reference plane, the second acute angle is smaller than the first acute angle, and the reference plane is perpendicular to the axis of the main body part.

[0006] Optionally, the angle of the first acute angle is 30°-45°.

[0007] Optionally, the angle of the second acute angle is 5°-15°.

[0008] Optionally, the first grinding surface has a width of 1mm to 1.2mm in projection on the top surface of the grinding portion, and the second grinding surface has a width of 1.8mm to 2mm in projection on the top surface of the grinding portion.

[0009] Optionally, the grinding portion is provided in plurality, and the plurality of grinding portions are arranged in axial direction of the main body portion.

[0010] Optionally, the first grinding surface and the second grinding surface have a mesh number of 800 mesh to 2000 mesh.

[0011] To achieve the above object, the application further provides a grinding device comprising the grinding wheel as described above.

[0012] To achieve the above object, the application further provides a wafer manufacturing method performed based on the grinding wheel as described above, the wafer manufacturing method comprising: providing a wafer original piece comprising a support piece and a device piece original piece which are bonded to each other; placing the wafer original piece at the grinding wheel, and making the device piece original piece face the bottom surface of the grinding portion, and making the first grinding surface and the second grinding surface grind the device piece original piece, so that the device piece original piece is partially ground and forms a notch matching the first grinding surface and the second grinding surface; and performing edge single-side etching on the ground wafer original piece.

[0013] Optionally, when the wafer original piece is placed at the grinding wheel, the wafer original piece is perpendicular to the axis of the main body portion, and an edge portion of the device piece original piece is partially located on a side of the intersection line of the first grinding surface and the second grinding surface close to the main body portion.

[0014] Optionally, when the first grinding surface and the second grinding surface grind the device piece original piece, the grinding wheel rotates at a speed of 8000rpm to 9000rpm, and the wafer original piece rotates at a linear speed of 10mm / s to 25mm / s.

[0015] Compared with the prior art, the grinding wheel, the grinding device and the wafer manufacturing method have the following advantages: the grinding wheel comprises a cylindrical main body and a grinding portion arranged on the outer circumferential surface of the main body; the top surface of the grinding portion is a plane perpendicular to the axis of the main body; the bottom surface of the grinding portion is formed with a first grinding surface inclined away from the top surface of the grinding portion and a second grinding surface inclined toward the top surface of the grinding portion and connected with the first grinding surface at one end, the other end of the second grinding surface being connected with the main body; the distance from the end of the first grinding surface close to the main body to the top surface of the grinding portion is greater than the distance from the end of the second grinding surface close to the main body to the top surface of the grinding portion; the first grinding surface has a first acute angle with a reference plane, the second grinding surface has a second acute angle with the reference plane, the second acute angle is smaller than the first acute angle, and the reference plane is perpendicular to the axis of the main body. The grinding wheel is used for grinding a wafer wafer in the process of manufacturing a wafer to achieve edge removal, and the application of the grinding wheel can increase the thickness of the silicon layer remaining at the edge of the wafer wafer, reduce or even avoid the occurrence of edge collapse, and improve the quality of the manufactured wafer. BRIEF DESCRIPTION OF DRAWINGS

[0016] The accompanying drawings are used to better understand the present application and do not constitute an improper limitation on the present application.

[0017] Figure 1 FIG. 1 is a structural schematic diagram of a grinding wheel according to an embodiment of the present application.

[0018] Figure 2 FIG. 2 is an enlarged schematic diagram of A of the grinding wheel shown in FIG. 1. Figure 1

[0019] Figure 3 FIG. 5 is a flow chart of a wafer manufacturing method according to an embodiment of the present application.

[0020] Figure 4 FIG. 6 is a structural schematic diagram of a wafer wafer used in the wafer manufacturing method according to an embodiment of the present application.

[0021] Figure 5 FIG. 7 is a schematic diagram of a device wafer wafer of a wafer wafer facing a grinding portion in the wafer manufacturing method according to an embodiment of the present application.

[0022] Figure 6 FIG. 8 is a schematic diagram of the first grinding surface and the second grinding surface of the grinding portion grinding a device wafer wafer of a wafer wafer in the wafer manufacturing method according to an embodiment of the present application.

[0023] Figure 7 FIG. 9 is a schematic diagram of a wafer transition wafer in the wafer manufacturing method according to an embodiment of the present application. ​

[0024] Figure 8 This is a schematic diagram of the structure of a wafer manufactured by a wafer manufacturing method according to an embodiment of the present invention.

[0025] Figure 9 This is a schematic diagram of the edge morphology of a wafer produced by a grinding wheel according to an embodiment of the present invention.

[0026] Figure 10 This is a schematic diagram of the edge morphology of a wafer produced by a grinding wheel according to another embodiment of the present invention.

[0027] Figure 11 This is a structural schematic diagram of a comparative grinding wheel provided by the present invention based on a pair of proportions.

[0028] Figure 12 This is a schematic diagram of the edge morphology of a wafer produced by a comparative grinding wheel provided according to a pair of proportions in this invention.

[0029] [The reference numerals are explained as follows]: 100-grinding wheel, 101-reference plane, 110-first main body, 120-first grinding part, 1201-first grinding surface, 1202-second grinding surface, 200-wafer, 300-wafer wafer, 310-support sheet, 320-device wafer, 3201-notch, 400-comparison grinding wheel, 410-second main body, 420-second grinding part, 421-third grinding surface, 422-fourth grinding surface. Detailed Implementation

[0030] The following specific examples illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention. It should be noted that the illustrations provided in this embodiment are only schematic representations of the basic concept of the present invention. Therefore, the drawings only show components related to the present invention and are not drawn according to the actual number, shape, and size of components in the actual implementation. In the actual implementation, the type, quantity, and proportion of each component can be arbitrarily changed, and the component layout may also be more complex.

[0031] In addition, each of the embodiments described below has one or more technical features, but this does not mean that all technical features in any embodiment must be implemented at the same time, or that only one or more technical features in different embodiments can be implemented separately. In other words, under the premise of being possible, those skilled in the art can selectively implement some or all of the technical features in any embodiment, or selectively implement a combination of some or all of the technical features in multiple embodiments, according to the disclosure of the present application, and according to the design specifications or implementation needs, thereby increasing the flexibility of the implementation of the present application.

[0032] As used in this specification, the singular forms "a," "an" and "the" include plural referents unless the content clearly dictates otherwise. As used in this specification, the term "or" is generally employed in its sense of "and / or" unless the content clearly dictates otherwise, and the terms "mounting," "connected," and "connection" should be construed broadly, for example, as fixedly connected, as detachably connected, or as integrally connected. It can be a mechanical connection or an electrical connection. It can be directly connected or indirectly connected through an intermediate medium. It can be an internal connection of two elements or an interaction relationship between two elements. The relationship terms such as "first", "second", etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between the entities or operations, nor indicate or imply relative importance or implicitly indicate the number of indicated technical features. It should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "axial", "radial", "circumferential", and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and therefore cannot be understood as limiting the present application. The specific meaning of the above terms in the present application can be understood by those skilled in the art according to the specific circumstances.

[0033] The present application aims to provide a grinding wheel for grinding wafer substrates to achieve edge removal and also reduce the occurrence of edge collapse phenomenon, and improve the quality of the manufactured wafers. The wafers include but are not limited to SOI wafers.

[0034] In order to make the objects, advantages and features of the present application more clearly, the present application will be further described in detail below with reference to the accompanying drawings. It should be noted that all the drawings are very simplified and all use non-precise proportions, only for the purpose of conveniently and clearly assisting the description of the embodiments of the present application. The same or similar reference signs in the drawings represent the same or similar parts.

[0035] Figure 1 A structural schematic diagram of a grinding wheel 100 provided by some embodiments of the present application is shown, Figure 2 Figure 1 is an enlarged schematic diagram of A in

[0036] As shown in Figure 1 and Figure 2 , the grinding wheel 100 includes a main body part and a grinding part. For the convenience of description, the main body part of the grinding wheel 100 provided by the embodiments of the present application is referred to as a first main body part 110, and the grinding part of the grinding wheel 100 is referred to as a first grinding part 120. The first main body part 110 is of a cylindrical structure. The first grinding part 120 is arranged on the outer peripheral surface of the first main body part 110. The top surface of the first grinding part 120 is a plane perpendicular to the axis of the first main body part 110, and the bottom surface of the first grinding part 120 is formed with a first grinding surface 1201 inclined toward the direction away from the top surface of the first grinding part 120 and a second grinding surface 1202 inclined toward the direction close to the top surface of the first grinding part 120 and connected at one end with the first grinding surface 1201, the other end of the second grinding surface 1202 being connected with the first main body part 110. The distance from the end of the first grinding surface 1201 close to the first main body part 110 to the top surface of the first grinding part 120 is greater than the distance from the end of the second grinding surface 1202 close to the first main body part 110 to the top surface of the first grinding part 120. The first grinding surface 1201 has a first acute angle a with a reference plane 101, and the second grinding surface 1202 has a second acute angle β with the reference plane 101, the second acute angle β being smaller than the first acute angle a. The reference plane 101 is perpendicular to the axis of the first main body part 110.

[0037] It can be understood that the top surface and the bottom surface of the first grinding part 120 are opposite in the axial direction of the first main body part 110. In Figure 1 and Figure 2 , the upper surface of the first grinding part 120 is the top surface, and the lower surface is the bottom surface.

[0038] The grinding wheel 100 is used in the process of manufacturing a wafer 200 (as shown in Figure 8 , and is used to grind a wafer wafer 300 (as shown in Figure 4 ​The wafer 200 is polished (as shown) to remove edges and effectively reduce edge chipping, thus improving the quality of the resulting wafer 200. In this embodiment of the invention, the wafer 200 may be an SOI wafer. It is readily understood that when the wafer 200 is an SOI wafer, the wafer 300 includes a support sheet 310 and a device wafer 320 bonded together.

[0039] The following explanation will take the example of wafer 200 being an SOI wafer.

[0040] The process of wafer manufacturing based on the aforementioned grinding wheel 100 is as follows: Figure 3 As shown, it includes the following steps S1, S2 and S3.

[0041] Step S1 includes: providing the wafer 300.

[0042] Step S2 includes: placing the wafer 300 on the grinding wheel 100, and arranging the device wafer 320 facing the bottom surface of the first grinding section 120 (e.g., Figure 5 As shown), and the first grinding surface 1201 and the second grinding surface 1202 are brought into contact with the original device wafer 320 to grind the original device wafer 320 (as shown). Figure 6 As shown), a portion of the original device wafer 320 is ground away, forming a notch 3201 that matches the first grinding surface 1201 and the second grinding surface 1202 (as shown). Figure 7 (As shown).

[0043] Step S3 includes: performing edge single-sided etching on the wafer 300 that has been ground by the grinding wheel 100 to obtain the wafer 200.

[0044] Depend on Figure 7 As can be seen, in step S2, the notch 3201 is formed by grinding the first grinding surface 1201 and the second grinding surface 1202, which can leave a thicker silicon layer on the edge of the original device wafer 320 after grinding. This can reduce edge chipping during the subsequent single-sided edge etching process and improve the edge quality of the obtained wafer 200.

[0045] In practice, the angle of the first acute angle α is preferably selected within the range of 30° to 45°. The angle of the second acute angle β is preferably selected within the range of 5° to 15°.

[0046] It can be understood that, in the embodiment of the present application, the distance from the first grinding surface 1201 to the axis of the first body part 110 decreases along the direction from the top surface to the bottom surface of the first grinding part 120, and the distance from the second grinding surface 1202 to the axis of the first body part 110 increases along the direction from the top surface to the bottom surface of the first grinding part 120.

[0047] When the first grinding surface 1201 and the second grinding surface 1202 are projected along the axis of the first body part 110 to the top surface of the first grinding part 120, the width of the projection of the first grinding surface 1201 on the top surface of the first grinding part 120 is X1, and the width of the projection of the second grinding surface 1202 on the top surface of the first grinding part 120 is X2. The values of X1 and X2 are determined according to requirements. In a non-limiting example, the width X1 of the projection of the first grinding surface 1201 on the top surface of the first grinding part 120 is 1 mm to 1.2 mm, and the width X2 of the projection of the second grinding surface 1202 on the top surface of the first grinding part 120 is 1.8 mm to 2 mm. In addition, the mesh number of the first grinding surface 1201 and the second grinding surface 1202 can be selected in the range of 800 mesh to 2000 mesh.

[0048] Please refer back to Figure 1 The grinding wheel 100 preferably includes a plurality of the first grinding parts 120, and the plurality of the first grinding parts 120 are arranged at intervals along the axis of the first body part 110. In this way, the grinding wheel 100 can simultaneously grind a plurality of the wafer substrates 300, thereby improving production efficiency.

[0049] In the case where the grinding wheel 100 includes a plurality of the first grinding parts 120, the top surface of one of the first grinding parts 120 and the bottom surface of the other of the first grinding parts 120 are arranged face to face, so that when the grinding wheel 100 simultaneously grinds a plurality of the wafer substrates 300, the adjacent two wafer substrates 300 are isolated. In addition, the minimum distance h1 between the adjacent two first grinding parts 120 should be not less than the thickness of the wafer substrate 300, so as to avoid the support sheet 310 contacting the other of the adjacent two first grinding parts 120 when the wafer substrate 300 is ground by one of the adjacent two first grinding parts 120.

[0050] In the case that the thickness of the support sheet 310 and the device sheet wafer 320 is 774um-777um, the minimum distance h1 between two adjacent first grinding parts 120 can be selected in the range of 1.8mm-3mm. In addition, the minimum size h2 of the first grinding part 120 in the axial direction of the first main body part 110 can be greater than or equal to 2mm.

[0051] The second purpose of the embodiment of the present application is to provide a grinding device, which comprises the grinding wheel 100 as described above.

[0052] The third purpose of the embodiment of the present application is to provide a wafer preparation method for preparing the wafer 200. The flow chart of the wafer preparation method is shown in Figure 3 The wafer preparation method comprises the steps S1, S2 and S3 as described above.

[0053] The wafer wafer 300 is manufactured by using the prior art. In an optional example, the support sheet 310 and the device sheet wafer 320 are first bonded after thermal oxidation, and then the wafer wafer 300 is obtained by thermal strengthening treatment. The temperature of the thermal strengthening treatment is 900℃-1250℃, the time is 1h-3h, and the atmosphere during the thermal strengthening is a mixed atmosphere of oxygen and inert gas, or a mixed atmosphere of hydrogen and inert gas, and the inert gas includes but is not limited to at least one of argon and helium.

[0054] In addition, the off-orientation of the support sheet 310 and the device sheet wafer 320 can be selected in the range of 0.1°-0.6°, preferably in the range of 0.2°-0.4°. The thickness of the support sheet 310 is selected in the range of 773um-777um, and the total thickness variation (TTV) thereof is less than 0.4um. The thickness of the device sheet wafer 320 is selected in the range of 773um-777um, and the total thickness variation thereof is less than 0.4um.

[0055] When the device sheet wafer 320 is ground by using the grinding wheel 100, the wafer wafer 300 is perpendicular to the axis of the first main body part 110, and the edge portion of the device sheet wafer 320 is partially located on the side close to the first main body part 110 of the intersection line of the first grinding surface 1201 and the second grinding surface 1202. In addition, during the grinding process, the grinding wheel 100 rotates at a speed of 8000rpm-9000rpm, and also moves in the direction of the device sheet wafer 320 pointing to the support sheet 310, and the wafer wafer 300 rotates at a linear speed of 10mm / s-25mm / s.

[0056] The step S3 can be performed by using the commercially available Spin-D solution according to the prior art, which is not described herein.

[0057] The effects of the grinding wheel 100 and wafer manufacturing method provided by the present invention will be explained next through several embodiments and comparative examples.

[0058] In Embodiment 1, the wafer 200 is manufactured using the aforementioned grinding wheel 100 and the wafer manufacturing method. The wafer 200 is an SOI wafer. The first acute angle α is 45°, the second acute angle β is 20°, the minimum distance between two adjacent first grinding sections 120 is 1.8 mm, and the mesh size of the first grinding surface 1201 and the second grinding surface 1202 is 800 mesh. During grinding, the grinding wheel 100 rotates at 9000 rpm, and the wafer 300 rotates at a linear velocity of 25 mm / s.

[0059] The edge morphology of the wafer 200 obtained in this embodiment is as follows: Figure 9 As shown. By Figure 9 As can be seen, the edge of the wafer 200 has a small number of holes and depressions.

[0060] In Example 2, the grinding wheel 100 and the wafer 200 described in the aforementioned wafer manufacturing method are also used, and the wafer 200 is an SOI wafer. The only difference between this example and Example 1 is that the angle of the second acute angle β is 15°.

[0061] The edge morphology of the wafer 200 prepared in this embodiment is as follows: Figure 10 As shown. By Figure 10 As can be seen, the edges of the wafer 200 are flat, with almost no holes or depressions.

[0062] In Comparative Example 1, the following is used: Figure 11 The wafer 200, which is an SOI wafer, is prepared using a comparative grinding wheel 400.

[0063] refer to Figure 11The contrast grinding wheel 400 includes a second body part 410 and a second grinding part 420. The second body part 410 is a cylindrical structure, and the second grinding part 420 is arranged on the outer circumferential surface of the second body part 410. The top surface of the second grinding part 420 is a plane perpendicular to the axis of the second body part 410, and the bottom surface of the second grinding part 420 is partially inclined away from the top surface of the second grinding part 420 and formed into a third grinding surface 421. The bottom surface of the second grinding part 420 is also partially formed into a fourth grinding surface 422 which is perpendicular to the axis of the second body part 410 and has one end connected to the third grinding surface 421, and the other end connected to the second body part 410. The third grinding surface 421 and the fourth grinding surface 422 form a third acute angle γ, and the angle of the third acute angle γ is 45°. The mesh number of the third grinding surface 421 and the fourth grinding surface 422 is 800 mesh.

[0064] The process of manufacturing the wafer 200 by using the contrast grinding wheel 400 includes steps S10, S20 and S30.

[0065] The step S10 includes providing the wafer blank 300.

[0066] The step S20 includes arranging the wafer blank 300 at the contrast grinding wheel 400, and making the device wafer blank 320 face the second grinding part 420, and at least making the third grinding surface 421 grind the device wafer blank 320.

[0067] The step S30 includes performing edge single-face etching on the wafer blank 300 processed by the step S20.

[0068] The morphology of the edge of the wafer 200 manufactured by the present comparative example is shown in FIG. 2B. Figure 12 As shown in FIG. 2B, it can be seen that the edge of the wafer 200 manufactured by the present comparative example has a large number of holes and recesses. Figure 12

[0069] Comparing the wafer 200 manufactured by the present comparative example with the wafer 200 manufactured by the present example, it can be seen that the edge of the wafer 200 manufactured by the present example has a smaller degree of edge collapse than the edge of the wafer 200 manufactured by the present comparative example, and thus the quality of the edge of the wafer 200 manufactured by the present example is better than the quality of the edge of the wafer 200 manufactured by the present comparative example. Figure 9 Figure 11 Figure 12 It can be seen that the edges of the wafers 200 in the present example and the present comparative example both have edge collapse, but the degree of edge collapse in the present example is smaller than that in the present comparative example, and thus the quality of the edge of the wafer 200 manufactured by the present example is better than the quality of the edge of the wafer 200 manufactured by the present comparative example. The edge of the wafer 200 manufactured by the present example has almost no edge collapse.

[0070] ​​​While the application has been disclosed in connection with the preferred embodiments provided herein, it should be understood that many modifications, substitutions, and changes can be made by those skilled in the art without departing from the spirit or scope of the application. Accordingly, it is intended that all such alterations and variations be considered as within the spirit and scope of the application as defined by the following claims, if any, and their equivalents.

Claims

1. A grinding wheel characterized by, The grinding wheel comprises: a cylindrical body portion; and a grinding portion provided on an outer circumferential surface of the body portion; a top surface of the grinding portion is a plane perpendicular to an axis of the body portion, a bottom surface of the grinding portion is formed with a first grinding surface inclined toward a direction away from the top surface of the grinding portion and a second grinding surface inclined toward a direction close to the top surface of the grinding portion and connected with the first grinding surface at one end, the other end of the second grinding surface is connected with the body portion, a distance from an end of the first grinding surface close to the body portion to the top surface of the grinding portion is greater than a distance from an end of the second grinding surface close to the body portion to the top surface of the grinding portion; the first grinding surface has a first acute angle with a reference plane, the second grinding surface has a second acute angle with the reference plane, the second acute angle is smaller than the first acute angle, and the reference plane is perpendicular to the axis of the body portion.

2. The grinding wheel of claim 1, wherein The first acute angle is 30°-45°.

3. The grinding wheel of claim 2, wherein The second acute angle is 5°-15°.

4. The grinding wheel of claim 1, wherein A projection of the first grinding surface on the top surface of the grinding portion has a width of 1mm-1.2mm, and a projection of the second grinding surface on the top surface of the grinding portion has a width of 1.8mm-2mm.

5. The grinding wheel of claim 1, wherein The grinding portion is in a plurality, and the plurality of grinding portions are arranged along an axial direction of the body portion.

6. The grinding wheel of claim 1, wherein The first grinding surface and the second grinding surface have a mesh number of 800-2000.

7. A grinding apparatus characterized by comprising: The grinding wheel comprises the grinding wheel as claimed in any one of claims 1-5.

8. A wafer manufacturing method performed based on the grinding wheel according to any one of claims 1 to 5, characterized by, The wafer manufacturing method comprises: providing a wafer original piece comprising a support piece and a device piece original piece bonded with each other; placing the wafer original piece at the grinding wheel, and making the device piece original piece face the bottom surface of the grinding portion, and making the first grinding surface and the second grinding surface grind the device piece original piece to make the device piece original piece partially ground and form a notch matched with the first grinding surface and the second grinding surface; and performing edge single-side etching on the ground wafer original piece.

9. The wafer manufacturing method according to claim 8, wherein When the wafer original piece is placed at the grinding wheel, the wafer original piece is perpendicular to the axis of the body portion, and an edge portion of the device piece original piece is partially located on a side of an intersection line of the first grinding surface and the second grinding surface close to the body portion.

10. The wafer manufacturing method according to claim 8, wherein When the first grinding surface and the second grinding surface grind the device piece original piece, the grinding wheel rotates at a speed of 8000-9000rpm, and the wafer original piece rotates at a linear speed of 10-25mm / s.

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