OLED packaging structure and packaging process thereof
By introducing a combination of buffer layer and encapsulation layer into the OLED encapsulation structure, the problem of easy failure of the encapsulation structure is solved, the structural strength and reliability of the OLED are enhanced, moisture erosion is prevented, and a better protection effect is achieved.
Patent Information
- Application Number
- CN202310421328.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2023-04-19
- Publication Date
- 2026-02-03
AI Technical Summary
Existing OLED packaging structures are prone to failure in point impact, ball drop, pen drop, and drop tests, resulting in reduced reliability.
The structure employs a combination of a buffer layer and an encapsulation layer. The buffer layer is disposed between or on the outside of the substrate and the encapsulation layer, and includes a first SiNx layer, an organic layer, and a second SiNx layer. It is fabricated using PE-CVD and IJP technologies, and a thin film layer is formed by combining inkjet printing and UV irradiation to enhance structural strength and resist water vapor erosion.
It improves the structural strength and reliability of OLEDs, prevents encapsulation failure, absorbs point impacts and moisture, and protects the substrate from corrosion.
Smart Images
Figure CN121463655A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of OLED production technology, specifically to an OLED packaging structure and its packaging process. Background Technology
[0002] OLED, also known as organic electroluminescent display or organic light-emitting semiconductor, is a current-driven organic light-emitting device. It emits light through the injection and recombination of charge carriers, and the light intensity is proportional to the injected current. In order for OLED to function better, an encapsulation process is required during the production and processing.
[0003] In existing technologies, common encapsulation structures have weak impact resistance and low structural strength. They are prone to encapsulation failure during tests such as ball drop, pen drop, and drop, which leads to a decrease in the reliability of OLEDs. Summary of the Invention
[0004] Technical problems to be solved
[0005] To address the shortcomings of existing technologies, this invention provides an OLED packaging structure that solves the problems of weak impact resistance, low structural strength, and easy packaging failure during ball drop, pen drop, and drop tests, which leads to reduced OLED reliability.
[0006] Technical solution
[0007] To achieve the above objectives, the present invention provides the following technical solution: an OLED encapsulation structure, comprising a substrate and an encapsulation component with a buffer function disposed on the substrate, wherein the encapsulation component includes a buffer layer and an encapsulation layer disposed on the buffer layer, and the encapsulation layer includes a first SiN... x Layer, organic layer and second SiN x The organic layer is disposed in the first SiN layer. x Layer and second SiN x Between layers.
[0008] Furthermore, the buffer layer is disposed between the substrate and the encapsulation layer.
[0009] Furthermore, the buffer layer is disposed on the side of the encapsulation layer away from the substrate.
[0010] This invention also provides a packaging process for an OLED packaging structure, the process flow of which includes: vacuum evaporation—fabrication of the packaging structure, including the following specific steps:
[0011] S1) Vacuum evaporation: First, multiple organic thin films are evaporated in a vacuum environment to improve the quality and lifespan of the device. Then, metal electrodes are evaporated using a low-power-function active metal in a vacuum environment.
[0012] S2) Fabrication of the packaging structure: Fabrication of a buffer layer with good impact resistance and a first SiN layer on the evaporated substrate. x Layer, organic layer and second SiN x A layer encapsulating the layer.
[0013] Furthermore, in S1), the evaporation temperature of the organic material is 170℃~400℃, the ITO substrate temperature is 100℃~150℃, the evaporation rate is 0.1nm~1nm / s, and the vacuum degree of the evaporation chamber is 5×10⁻⁶. -4 pa~3×10 -4 pa.
[0014] Furthermore, in S1), the evaporation heating current of the metal electrode material is 70a to 100a, the ITO substrate temperature is controlled at 80℃, the evaporation rate is 0.5nm to 5nm / s, and the vacuum degree of the evaporation chamber is 7×10⁻⁶. -4 pa~5×10 -4 pa.
[0015] Furthermore, in step S2), an organic buffer layer is printed onto the PDL structure in the OLED anode structure using inkjet printing technology, and a thin film layer is formed by UV irradiation. The first SiN layer is then fabricated on the substrate using PE-CVD. x Layer, then the first SiN x An organic layer is fabricated on top of the first layer using IJP technology, and finally, a second SiN layer is fabricated on the organic layer using PE-CVD. x layer.
[0016] Furthermore, in step S2), a first SiN layer is first fabricated on the substrate using the PE-CVD method. x Layer, then the first SiN x An organic layer is fabricated on top of the first layer using IJP technology, and finally, a second SiN layer is fabricated on the organic layer using PE-CVD. x The first layer is then printed with an organic buffer layer onto the second SiN layer using inkjet printing technology. x On the layer, a thin film layer is formed by UV irradiation.
[0017] Furthermore, before S1), there are also cleaning and processing steps for the ITO glass: cleaning the ITO glass with an ultrasonic cleaner, drying it in an infrared drying oven, and then performing surface activation treatment on the dried ITO glass.
[0018] Furthermore, the cleaning of the ITO glass is performed by cleaning for 5 minutes, stopping for 5 minutes, and repeating this process 3 times.
[0019] Beneficial effects
[0020] The present invention has the following beneficial effects:
[0021] (1) In this OLED encapsulation structure, the first SiN layer is fabricated on the substrate using the PE-CVD method through an encapsulation layer and a buffer layer. x Layer, then the first SiN x An organic layer is fabricated on top of the first layer using IJP technology, and finally, a second SiN layer is fabricated on the organic layer using PE-CVD. x The encapsulation layer can encapsulate the substrate, isolating it from air and water, thus protecting the substrate. The buffer layer is made of organic material, which can absorb point impacts and also has the function of absorbing moisture, thus protecting the substrate and preventing encapsulation failure, which would lead to a decrease in the reliability of OLEDs.
[0022] (2) The OLED encapsulation structure can indirectly absorb point impacts by placing a buffer layer between the encapsulation layer and the substrate. When the encapsulation layer is subjected to a point impact, the buffer layer can play an indirect buffering role. Only when the encapsulation layer falls off will the buffer layer be exposed. At this time, the buffer layer can directly protect the substrate and effectively absorb moisture to prevent the substrate from being corroded.
[0023] (3) The OLED encapsulation structure sets the buffer layer on the outermost side of the encapsulation layer. When there is an impact, the buffer layer is the first to be affected and can play a direct buffering role. It prioritizes the protection of the encapsulation layer and prevents the encapsulation layer from being damaged and falling off in advance. It can directly absorb external moisture and prevent the internal structure from being disturbed.
[0024] Of course, any product implementing this invention does not necessarily need to achieve all of the advantages described above at the same time. Attached Figure Description
[0025] Figure 1 This is a schematic diagram of the first embodiment of the packaging structure of the present invention;
[0026] Figure 2 This is a schematic diagram of the second embodiment of the packaging structure of the present invention;
[0027] Figure 3 This is a schematic diagram of the packaging process of the first embodiment of the present invention;
[0028] Figure 4 This is a schematic diagram of the packaging process in the second embodiment of the present invention.
[0029] In the figure, 1 is the substrate; 2 is the buffer layer; 3 is the encapsulation layer; and 301 is the first SiN. x Layer; 302, organic layer; 303, second SiN x layer. Detailed Implementation
[0030] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.
[0031] In the description of this invention, it should be understood that the terms "opening", "upper", "lower", "thickness", "top", "middle", "length", "inner", "around", etc., which indicate orientation or positional relationship, are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the components or elements referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as limiting this invention.
[0032] Please see Figures 1-4 This invention provides a technical solution: an OLED encapsulation structure, including a substrate 1 and an encapsulation component with a buffer function disposed on the substrate 1. The encapsulation component includes a buffer layer 2 and an encapsulation layer 3 disposed on the buffer layer 2. The encapsulation layer 3 includes a first SiN... x Layer 301, organic layer 302, and second SiN x Layer 303, the organic layer 302 is disposed in the first SiN x Layer 301 and the second SiN x Between floor 303.
[0033] Specifically, the buffer layer 2 is disposed between the substrate 1 and the encapsulation layer 3.
[0034] In this embodiment, after the substrate 1 is fabricated, the PDL in the anode structure of the substrate 1 is used as a barrier, and the buffer layer 2 is printed by inkjet printing. Then, the encapsulation layer 3 is fabricated. The buffer layer 2 is placed between the substrate 1 and the encapsulation layer 3, which can directly protect the substrate 1. In subsequent tests such as ball drop, pen drop, and drop test, it can play an indirect buffering role. Even if the encapsulation layer 3 is damaged, the buffer layer 2 will still provide a certain degree of protection for the substrate 1. The material of this layer can be a material similar to Futaba, which has the effect of absorbing point impacts and also has the function of absorbing moisture.
[0035] Specifically, the buffer layer 2 is disposed on the side of the encapsulation layer 3 away from the substrate 1.
[0036] In this embodiment, after the substrate 1 is vapor-deposited, the first SiN is sequentially fabricated using PE-CVD and IJP technology. x Layer 301, organic layer 302, and second SiN x Layer 303 directly encapsulates substrate 1, and then outside the encapsulation layer 3, i.e., the second SiN... x By fabricating a buffer layer 2 on layer 303, the buffer layer 2 can play a direct buffering role, thereby protecting the encapsulation layer 3 and preventing the substrate 1 from being exposed.
[0037] A packaging process for an OLED packaging structure
[0038] Example 1
[0039] Step 1: Clean and process the ITO glass using an ultrasonic cleaner, following the methods of detergent cleaning, ethanol cleaning, acetone cleaning, and pure water treatment. The cleaning process involves cleaning for 5 minutes, stopping for 5 minutes, and repeating this cycle 3 times. After cleaning, the glass is dried in a drying oven. Finally, a surface activation treatment is performed to increase the oxygen content of the ITO surface layer and improve the work function of the ITO surface.
[0040] Step 2: First, in a vacuum of 5×10 -4 pa~3×10 -4 In the vacuum evaporation chamber of PA, organic thin films are vacuum deposited. ITO glass is placed on a heatable rotating bracket, and a metal mask is placed below it to control the deposition pattern. The organic material is evaporated between 170°C and 400°C, so that the temperature of the ITO substrate is controlled between 100°C and 150°C, and the growth rate is controlled between approximately 0.1nm and 1nm / s, that is, between 1 crystal oscillator point and 10 crystal oscillator points / second.
[0041] After the organic thin film evaporation is completed, vacuum evaporation of the metal electrode is performed at a vacuum level of 7 × 10⁻⁶. -4 pa~5×10 -4 The evaporation process is carried out in the vacuum evaporation chamber of PA. During the evaporation process, the evaporation heating current is controlled between 70A and 100A. During this process, the temperature of the ITO substrate is controlled at 80℃, and the evaporation rate is between 0.5nm and 5nm / s, that is, between 5 crystal oscillators and 50 crystal oscillators / second.
[0042] Step 3: The organic buffer layer 2 is printed onto the substrate 1 by inkjet printing, or it can be coated onto the substrate 1 by dispensing. Afterwards, it is irradiated with ultraviolet light to form a thin film. Subsequently, the substrate 1 after vapor deposition is encapsulated in an anhydrous and oxygen-free environment with an inert gas atmosphere. The first SiN layer is then fabricated on the substrate 1 using the PE-CVD method. xLayer 301, then the first SiN x An organic layer 302 is fabricated on layer 301 using IJP technology, and finally, a second SiN layer is fabricated on organic layer 302 using PE-CVD. x Layer 303, complete the encapsulation.
[0043] Example 2
[0044] Step 1: Clean and process the ITO glass using an ultrasonic cleaner, following the methods of detergent cleaning, ethanol cleaning, acetone cleaning, and pure water treatment. The cleaning process involves cleaning for 5 minutes, stopping for 5 minutes, and repeating this cycle 3 times. After cleaning, the glass is dried in a drying oven. Finally, a surface activation treatment is performed to increase the oxygen content of the ITO surface layer and improve the work function of the ITO surface.
[0045] Step 2: First, in a vacuum of 5×10 -4 pa~3×10 -4 In the vacuum evaporation chamber of PA, organic thin films are vacuum deposited. ITO glass is placed on a heatable rotating bracket, and a metal mask is placed below it to control the deposition pattern. The organic material is evaporated between 170°C and 400°C, so that the temperature of the ITO substrate is controlled between 100°C and 150°C, and the growth rate is controlled between approximately 0.1nm and 1nm / s, that is, between 1 crystal oscillator point and 10 crystal oscillator points / second.
[0046] After the organic thin film evaporation is completed, vacuum evaporation of the metal electrode is performed at a vacuum level of 7 × 10⁻⁶. -4 pa~5×10 -4 The evaporation process is carried out in the vacuum evaporation chamber of PA. During the evaporation process, the evaporation heating current is controlled between 70A and 100A. During this process, the temperature of the ITO substrate is controlled at 80℃, and the evaporation rate is between 0.5nm and 5nm / s, that is, between 5 crystal oscillators and 50 crystal oscillators / second.
[0047] Step 3: The vapor-deposited substrate 1 is encapsulated in an anhydrous and oxygen-free environment with an inert gas atmosphere, and the first SiN layer is fabricated on substrate 1 using the PE-CVD method. x Layer 301, then the first SiN x An organic layer 302 is fabricated on layer 301 using IJP technology, and finally, a second SiN layer is fabricated on organic layer 302 using PE-CVD. x Layer 303: The organic buffer layer 2 is printed onto the substrate 1 by inkjet printing, or the buffer layer 2 can be coated onto the substrate 1 by dispensing. After ultraviolet irradiation, a thin film layer is formed to complete the encapsulation.
[0048] It should be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article, or apparatus.
[0049] The preferred embodiments of the present invention disclosed above are merely illustrative of the invention. These preferred embodiments do not exhaustively describe all details, nor do they limit the invention to the specific implementations described. Clearly, many modifications and variations can be made based on the content of this specification. This specification selects and specifically describes these embodiments to better explain the principles and practical applications of the invention, thereby enabling those skilled in the art to better understand and utilize the invention. The invention is limited only by the claims and their full scope and equivalents.
Claims
1. An OLED encapsulation structure, comprising a substrate (1) and an encapsulation component with a buffer function disposed on the substrate (1), characterized in that: The encapsulation component includes a buffer layer (2) and an encapsulation layer (3) disposed on the buffer layer (2), the encapsulation layer (3) including a first SiN x Layer (301), organic layer (302) and second SiN x Layer (303), the organic layer (302) is disposed in the first SiN x Layer (301) and second SiN x Between layers (303).
2. The OLED packaging structure according to claim 1, characterized in that: The buffer layer (2) is disposed between the substrate (1) and the encapsulation layer (3).
3. The OLED packaging structure according to claim 1, characterized in that: The buffer layer (2) is disposed on the side of the encapsulation layer (3) away from the substrate (1).
4. A packaging process for an OLED packaging structure, the process flow including: Vacuum evaporation deposition—fabrication of encapsulation structures, characterized by the following specific steps: S1) Vacuum evaporation: First, multiple organic thin films are evaporated in a vacuum environment to improve the quality and lifespan of the device. Then, metal electrodes are evaporated using a low-power-function active metal in a vacuum environment. S2) Fabrication of the packaging structure: A buffer layer (2) with good impact resistance and a first SiN layer are fabricated on the vapor-deposited substrate (1). x Layer (301), organic layer (302) and second SiN x Encapsulation layer (3) of layer (303).
5. The packaging process for an OLED packaging structure according to claim 4, characterized in that: In S1), the evaporation temperature of the organic material is 170℃~400℃, the ITO substrate temperature is 100℃~150℃, the evaporation rate is 0.1nm~1nm / s, and the vacuum degree of the evaporation chamber is 5×10⁻⁶. -4 pa~3×10 -4 pa.
6. The packaging process for an OLED packaging structure according to claim 4, characterized in that: In S1), the evaporation heating current of the metal electrode material is 70a to 100a, the ITO substrate temperature is controlled at 80℃, the evaporation rate is 0.5nm to 5nm / s, and the vacuum degree of the evaporation chamber is 7×10⁻⁶. -4 pa~5×10 -4 pa.
7. The packaging process for an OLED packaging structure according to claim 4, characterized in that: In step S2), the organic buffer layer (2) is printed onto the PDL structure in the OLED anode structure using inkjet printing technology, and a thin film layer is formed by UV irradiation. The first SiN is then fabricated on the substrate (1) using PE-CVD. x Layer (301), then the first SiN x An organic layer (302) is fabricated on the organic layer (301) using IJP technology, and finally a second SiN is fabricated on the organic layer (302) using PE-CVD. x Layer (303).
8. The packaging process for an OLED packaging structure according to claim 4, characterized in that: In step S2), a first SiN substrate is first fabricated on the substrate (1) using the PE-CVD method. x Layer (301), then the first SiN x An organic layer (302) is fabricated on the organic layer (301) using IJP technology, and finally a second SiN is fabricated on the organic layer (302) using PE-CVD. x Layer (303), and then the organic buffer layer (2) is printed on the second SiN by inkjet printing technology. x A thin film layer is formed on the layer (303) by UV irradiation.
9. The packaging process for an OLED packaging structure according to claim 4, characterized in that: Before step S1), the process includes cleaning and processing steps for the ITO glass: cleaning the ITO glass using an ultrasonic cleaner, drying it in an infrared drying oven, and then performing surface activation treatment on the dried ITO glass.
10. The packaging process for an OLED packaging structure according to claim 9, characterized in that: The cleaning of the ITO glass is performed by cleaning for 5 minutes, stopping for 5 minutes, and repeating this process 3 times.