Anisotropic conductive film, conductive connector, and conductive structure therefor

Abstract

The invention provides an anisotropic conductive film and a conductive connector which can realize low resistance, improvement of high-frequency characteristics, high resolution, improvement of contact stability caused by reduction of contact pressure, high current and improvement of durability compared with the prior art. The anisotropic conductive film (110) is provided with: an insulating film (112) comprising an elastic polymer material; and particles (200) which are dispersed in the insulating film (112) and which have magnetic anisotropy such that the easy magnetization direction becomes the thickness direction thereof, and which comprise a substance having topological antiferromagnetic properties. The particles (200) form a plurality of conductive parts (114) which are arranged at intervals in the in-plane direction of the insulating film (100) and are capable of conducting in the thickness direction thereof, and each of the conductive parts (114) is formed of a single particle (or a plurality of particles arranged in the thickness direction). Each of the particles (200) has a south pole region (604) and a north pole region (602) formed at both end portions in a direction along the easy magnetization direction, respectively, and the magnetic flux of the virtual magnetic field is concentrated in the south pole region (604) and the north pole region (602).

Description

TECHNICAL FIELD

[0001] The present application relates to an anisotropic conductive film, a conductive connector, and a conductive structure for them, and more particularly, to an anisotropic conductive film having a structure in which a conduction portion formed by using a substance having a topological antiferromagnetic property is arranged in an insulating film made of an insulating polymer material, and having anisotropic conductivity in the thickness direction; a conductive connector having a structure in which a movable electrode is combined with the anisotropic conductive film; and a conductive structure preferably used as the conduction portion arranged in the anisotropic conductive film and the conductive connector. BACKGROUND

[0002] In the manufacturing process of an integrated circuit (hereinafter referred to as an IC), after a desired circuit is formed on a silicon wafer (hereinafter also referred to simply as a wafer), a wafer test is performed to confirm whether or not the circuit is normally operating. This wafer test is performed using a semiconductor test device. In detail, in the semiconductor test device, a probe provided to a test head is brought into contact with a wafer, and electric signals are transmitted and received between the semiconductor test device connected to the test head and a circuit formed on the wafer, whereby the electrical characteristics of the circuit are checked.

[0003] Generally, several hundreds of ICs are formed on a silicon wafer, and in a wafer test, a whole or a divided test is performed in a state before these ICs are separated. If the IC is a memory such as a RAM or a ROM, the number of electrodes of each IC is several tens to several hundreds, but in the case where the IC is a CPU, a GPU, an MPU, or the like, the number of electrodes of each IC is several hundreds to several ten thousands, and thus when a plurality of ICs are simultaneously tested, it is necessary to connect a probe to several ten thousands or more electrodes at a time.

[0004] As the probe for the above-described semiconductor test device, in recent years, in addition to a metal probe, a probe using an anisotropic conductive film (so-called conductive rubber) has also been adopted. This is because the probe using the anisotropic conductive film is less damaged by deformation of a check electrode than the metal probe, and in addition, is also advantageous in the miniaturization of a check electrode interval. However, the anisotropic conductive film has a problem of fragility accompanying miniaturization, and thus, up to now, has been limited to use as a package probe configured for checking ICs after separation and packaging. That is, the practical use of the anisotropic conductive film in a wafer probe configured for checking ICs before separation has not been realized.

[0005] However, the present applicant has developed an anisotropic conductive film prior to the present application, filed a patent application therefor, and obtained a patent (see Patent Document 1). The anisotropic conductive film disclosed in Patent Document 1 (Japanese Patent No. 5755527) is a sheet-shaped anisotropic conductive film in which conductive particles are dispersed in an elastic insulating polymer material, and has anisotropic conductivity in the thickness direction, and has a structure in which the particle size d10 of 10% of the cumulative distribution of the particle size of the conductive particles is half or less of the particle size d90 of 90% of the cumulative distribution, and the particle size d90 of the conductive particles is 70 to 90% of the average thickness of the elastic insulating polymer material. In this way, in the cumulative distribution of the particle size, the particle size d90 of the conductive particles is 70 to 90%, i.e., approximately 80%, relative to the average thickness of the elastic insulating polymer material, which means the following.

[0006] That is, it means that the electrodes of the electrode substrate of the probe card located on one side of the anisotropic conductive film and the terminals (electrodes) of the circuit on the wafer located on the opposite side of the anisotropic conductive film are electrically connected by each (single) conductive particle of the particle size d90 (large diameter) when the probe card is press-bonded to the wafer, and further means that each (single) conductive particle of the particle size d90 (large diameter) functions as a spacer.

[0007] In addition, since a plurality of the conductive particles of the particle size d10 (small diameter) are arranged in a chain shape in the thickness direction of the anisotropic conductive film to form a conduction path, the anisotropic conductivity in the thickness direction of the anisotropic conductive film is ensured not only by the conduction path formed by the conductive particles of the particle size d90 (large diameter), but also by the conduction path formed by the conductive particles of the particle size d10 (small diameter).

[0008] Therefore, in the anisotropic conductive film of Patent Document 1, the anisotropic conductivity in the thickness direction of the anisotropic conductive film is ensured by the conduction path formed by each (single) conductive particle of the particle size d90 (large diameter) and the conduction path formed by the conductive particles of the particle size d10 (small diameter), and at the same time, excessive deformation of the anisotropic conductive film is prevented by the spacers (see Claim 1, paragraphs 0009 to 0043, Figures 1-4 ).

[0009] Patent Document 2 (Japanese Patent No. 5476221) discloses an anisotropic conductive film having a structure in which conductive particles in which the surface of a base material particle is coated with a nickel conductive layer containing nickel are dispersed in an insulating adhesive resin. The nickel conductive layer is preferably a nickel alloy layer, and more preferably a nickel alloy plating layer. The outer surface of the nickel conductive layer is covered with a coating film containing nickel oxide or nickel hydroxide. When the probe head is crimped to the wafer, the coating film containing nickel oxide or nickel hydroxide that coats the outer surface of the nickel conductive layer is broken, so that modification of the nickel conductive layer caused by corrosive gases in the atmosphere can be suppressed by the coating film, while the coating film is broken at the time of use, and the electrode of the probe head and the terminal (electrode) on the wafer are made to be in conduction via the nickel conductive layer (see Claim 5, paragraphs 0024-0084, Figures 1-3 ).

[0010] Patent Document 3 (Japanese Patent Application Publication No. 2021-064591) discloses an anisotropic conductive film having a structure in which coated particles in which the surface of a conductive particle having a conductive surface is coated with an insulating layer are dispersed in an insulating resin. The insulating layer contains a first material that is non-conductive and a second material that is non-conductive, and the polarities of the Zeta potentials of the first material and the second material measured at 25°C and pH 7 are opposite to each other. The conductive particle is, for example, a structure in which at least a part of the surface of a core material composed of a non-conductive material or a conductive material is covered with a conductive coating film composed of a conductive material. The conditions related to the polarities of the Zeta potentials are to improve the adhesion between the first material and the second material to form a dense insulating layer, and to prevent the insulating layer from peeling off from the conductive particle, so that the insulating reliability of the coated particle can be improved. When the probe head is crimped to the wafer, the insulating layer that coats the surface of the conductive particle is broken, so that the electrode of the probe head and the terminal (electrode) on the wafer can be made to be in conduction via the surface of the conductive particle (see Abstract, Claim 14, paragraphs 0016-0154, Figures 1-2 ).

[0011] Patent Literature 4 (Japanese Patent Application Publication No. 2022-041178) discloses a coated particle in which an electrically conductive particle having a metal film formed on the surface of a core material is coated with an insulating layer. The insulating layer contains a block copolymer having a hydrophobic site and a hydrophilic site, and an inorganic compound is supported on the hydrophilic site of the block copolymer. The inorganic compound supported on the insulating layer can successfully penetrate the electrode, and the electrically conductive particle is easily fixed to the electrode. Therefore, at the time of electrical connection when forming an electronic circuit, the coated particle can exhibit moderate elasticity, and the conductivity with the electrode is improved. In the coated particle, the insulating layer coating the electrically conductive particle is also destroyed to make the electrode of the probe and the terminal (electrode) on the wafer conductive, similar to Patent Literatures 2 and 3 (see Abstract, paragraphs 0014 to 0119, Figures 1-7 ). Prior Art Documents Patent Literature

[0012] Patent Literature 1: Japanese Patent No. 5755527 Patent Literature 2: Japanese Patent No. 5476221 Patent Literature 3: Japanese Patent Application Publication No. 2021-064591 Patent Literature 4: Japanese Patent Application Publication No. 2022-041178 SUMMARY PROBLEMS TO BE SOLVED BY THE INVENTION

[0013] In the anisotropic conductive film of Patent Literature 1, when the electrode of the probe disposed on one side thereof is crimped to the terminal (electrode) of the circuit on the wafer disposed on the opposite side thereof, each (single) electrically conductive particle of the particle size d90 (large diameter) functions as a spacer. Therefore, since excessive pressure is not applied to the anisotropic conductive film, its excessive deformation can be suppressed. Therefore, in the anisotropic conductive film, its durability can be extremely appropriately improved, and further, improved electrical characteristics can be ensured. However, ICs have a tendency to be further miniaturized, highly integrated, and have an increased number of contacts in the future. Therefore, for the existing anisotropic conductive film including the anisotropic conductive film, improvement in high-frequency characteristics based on further reduction in resistance and high resolution for coping with a finer pitch are desired. In addition, in achieving these desires, improvement in contact stability to the electrode (terminal) of the IC, high current with miniaturization and high integration of the IC, and improvement in durability also need to be achieved.

[0014] On the other hand, the anisotropic conductive film of Patent Document 2 obtains electrical conduction via the nickel conductive layer by destroying the coating film containing nickel oxide or nickel hydroxide that coats the outer surface of the nickel conductive layer by applying a high load. The anisotropic conductive film of Patent Document 3 also similarly obtains electrical conduction via the surface of the conductive particles by destroying the insulating layer that coats the surface of the conductive particles by applying a high load. The coated particles of Patent Document 4 also obtain electrical conduction by destroying the insulating layer that coats the conductive particles by applying a high load, and thus are still similar to Patent Documents 2 and 3.

[0015] Therefore, in the anisotropic conductive films of Patent Documents 2 and 3 and the coated particles of Patent Document 4 described above, there is a difficulty in that the contact resistance when the electrode of the probe head is crimped to the terminal (electrode) on the wafer becomes large, and the contact condition also becomes unstable. This means that even if these anisotropic conductive films, coated particles are used, the above-described expectations, that is, the improvement in contact stability to the electrode (terminal) of an IC, the high current property accompanying the miniaturization and high integration of an IC, and the improvement in durability cannot be satisfied.

[0016] The present application was completed in view of such circumstances, and aims to provide an anisotropic conductive film that can reduce the contact resistance (resistance) when an electrode of a probe head is crimped to a terminal (electrode) on a wafer compared to the past, thereby achieving an improvement in high frequency property and high resolution, and can reduce the contact pressure (contact force) when an electrode of a probe head is crimped to a terminal (electrode) on a wafer compared to the past, thereby achieving an improvement in contact stability and its maintenance, a high current property (an increase in allowable current), and an improvement in durability, an electrically conductive connector using the anisotropic conductive film, and an electrically conductive structure suitable for the anisotropic conductive film and the electrically conductive connector.

[0017] Other objects of the present application not explicitly described herein will become apparent from the following description and the accompanying drawings. Means for solving the problem

[0018] (1) The anisotropic conductive film of the present application is characterized by comprising: an insulating film composed of an insulating high molecular material having elasticity; and a plurality of particles having a substantially spherical shape dispersed in the inside of the insulating film, composed of a substance having a topological antiferromagnetic property, the plurality of particles form a plurality of conduction portions that can achieve electrical conduction in the thickness direction of the insulating film, the plurality of conduction portions are arranged at intervals in the inside of the insulating film in the in-plane direction of the insulating film so as not to produce electrical conduction in the in-plane direction of the insulating film, Each of the plurality of particles has magnetic anisotropy, and its easy magnetization direction is oriented toward the thickness direction of the insulating film, Each of the plurality of particles has a south pole region and a north pole region formed at both ends in a direction along the easy magnetization direction, magnetic flux of a virtual magnetic field is concentrated in the south pole region and the north pole region, and each of the plurality of particles has a plurality of spin current passage candidates (magnetic paths) connecting the south pole region and the north pole region, In operation, a voltage is applied between the south pole region and the north pole region along the easy magnetization direction, whereby: (a) the inside of each of the plurality of particles becomes a superconducting state; (b) spin current flows through one of the plurality of spin current passage candidates (magnetic paths) at a portion between the south pole region and the north pole region; (c) current flows at a portion from the outside to the south pole region of the particle and at a portion from the outside to the north pole region of the particle; (d) current-spin current conversion occurs in the south pole region and the north pole region, Thus, the plurality of conduction portions formed by the plurality of particles dispersed in the insulating film realize electrical conduction in the thickness direction of the insulating film.

[0019] As described above, the anisotropic conductive film of the present application has a plurality of conduction portions that realize electrical conduction in the thickness direction of the insulating film, the plurality of conduction portions being formed by a plurality of particles dispersed in the insulating film and being arranged at intervals in the in-plane direction of the insulating film inside the insulating film so as not to cause electrical conduction in the in-plane direction of the insulating film, and thus imparting conductivity only in the thickness direction of the insulating film. Thus, anisotropic conductivity is imparted.

[0020] In addition, each of the plurality of particles is substantially spherical, has magnetic anisotropy, and its easy magnetization direction is oriented toward the thickness direction of the insulating film, and has the south pole region and the north pole region formed at both ends in a direction along the easy magnetization direction. In addition, magnetic flux of a virtual magnetic field is concentrated in the south pole region and the north pole region. Thus, in operation, when a voltage is applied between the south pole region and the north pole region along the easy magnetization direction: (a) the inside of each of the plurality of particles becomes a superconducting state; (b) spin current flows at a portion between the south pole region and the north pole region; (c) current flows at a portion from the outside to the south pole region of the particle and at a portion from the outside to the north pole region of the particle; (d) generating a current-spin current conversion in the south pole region and the north pole region.

[0021] As a result of these (a) to (d), an electrical conduction in the thickness direction of the insulating film is achieved by the conduction portions with extremely low resistance.

[0022] In the anisotropic conductive film of the present application, by the above means, an electrical conduction in the thickness direction of the insulating film is achieved by the conduction portions, and thus the resistance of the anisotropic conductive film becomes extremely low. For example, it becomes an extremely low resistance to the same degree as that of generating superconductivity.

[0023] In addition, by achieving such an extremely low resistance, the high frequency characteristics of the anisotropic conductive film can be improved, and its high current can also be achieved.

[0024] Further, since the plurality of conduction portions are formed of a substance having a topological antiferromagnetic property and have a magnetic anisotropy with an easy magnetization direction toward the thickness direction of the insulating film, the arrangement pitch of the plurality of conduction portions can be made fine to the same degree as the particle diameter of the particles. Therefore, a higher resolution than ever before can be achieved, and a fine pitch required for further miniaturization and high integration of future ICs can also be satisfied.

[0025] Further, it is presumed that the spin current flowing inside the plurality of conduction portions is conducted by quantum mechanical tunneling effect without destroying the insulating film such as an oxide film existing on the surface of an electrode, a terminal, or the like as a contact object, and thus the contact object only needs to be pressed to the insulating film with an extremely low pressure, in other words, with a very small contact pressure. Therefore, the contact stability is improved compared to the past.

[0026] Further, as described above, since the contact object only needs to be pressed to the insulating film with an extremely low pressure and contact pressure to achieve electrical conduction of the contact object with the plurality of conduction portions, the displacement amount of the insulating film can be greatly reduced. Therefore, the durability of the anisotropic conductive film is improved.

[0027] (2) In the preferred example of the anisotropic conductive film of the present application, each of the plurality of conduction portions is formed of a single particle, the diameter of the particle is set to be larger than the thickness of the insulating film so that the end portion of the particle protrudes on both sides of the insulating film in a state where the insulating film is not deformed by pressure.

[0028] In this example, by adjusting the strength of the magnetic field applied to impart magnetic anisotropy to the plurality of particles, the level of magnetic anisotropy possessed by the single particle forming each of the plurality of conduction portions can be set to a high level (e.g., the highest level) that does not cause disorder. Thus, there is the advantage that the resistance of the spin current flowing through the conduction portions can be suppressed to be extremely low.

[0029] (3) In another preferred example of the anisotropic conductive film of the present application, each of the plurality of conduction portions is formed by a single cluster composed of a plurality of the particles arranged in the thickness direction of the insulating film, the length of the cluster in the thickness direction of the insulating film is set to be greater than the thickness of the insulating film, so that in a state where the insulating film is not deformed by pressure, the end portions of the particles are exposed on both sides of the insulating film.

[0030] In this example, by minimizing the number of the particles arranged in the in-plane direction of the insulating film inside the cluster, and adjusting the strength of the magnetic field applied to impart magnetic anisotropy to the plurality of particles, the level of magnetic anisotropy possessed by the single cluster forming each of the plurality of conduction portions can be set to a relatively high level (e.g., a level slightly lower than the highest level) that minimizes disorder thereof. Thus, there is the advantage that the current resistance generated between the particles inside the cluster can be suppressed, while the resistance of the spin current flowing through the conduction portions can be suppressed to be extremely low.

[0031] (4) In still another preferred example of the anisotropic conductive film of the present application, the insulating film is in the form of a sheet that is hardly stretchable in the in-plane direction thereof, and has flexibility (deformability) in the thickness direction thereof.

[0032] In this example, when the insulating film is brought into contact with a contact object such as an electrode, a terminal, or the like, the insulating film can easily be elastically deformed in the thickness direction thereof in accordance with the unevenness present in the surface layer of the contact object, thereby absorbing the unevenness. On the other hand, since the insulating film is hardly stretchable in the in-plane direction thereof due to contact with the contact object, there is the advantage that there is no concern that the arrangement positions of the plurality of conduction portions will be shifted to cause conduction failure or the like.

[0033] (5) In still another preferred example of the anisotropic conductive film of the present application, the insulating topological antiferromagnetic substance forming the particles is NiO, i.e., nickel oxide, or MnO, i.e., manganese oxide. In this case, as the source of NiO or MnO, metal Ni or metal Mn refined by the carbonyl method is preferably used. This is because, according to the research by the present inventors and others, in the case of using metal Ni or metal Mn refined by the carbonyl method, the most preferable results are obtained in both the exertion of the current-spin current conversion and the exertion of the function as the second superconductor within the range known at present.

[0034] In addition to NiO and MnO, Cr2O3, Mn3Ge, Mn3Sn, MnS, MnTe, MnF2, FeF2, FeCl2, FeO, CoCl2, CoO, NiCl2, NiO, Cr can also be used. Among these, MnTe (307 K), FeO (298 K), CoO (291 K), Cr (308 K) having a Néel temperature of 0°C or higher are easy to utilize their antiferromagnetism, and are thus preferred.

[0035] (6) In still another preferred example of the anisotropic conductive film of the present application, the particles are substantially spherical particles formed by agglomerating minute particles composed of a substance having a topological antiferromagnetic property, and having a diameter within the range of approximately 0.1 μm to 10 μm, minute projections (unevenness) formed of the minute particles and having a height difference within the range of approximately 10 nm to 100 nm are present on the surface of the substantially spherical particles.

[0036] In this example, the following advantages are obtained: a large number of defects (minute voids, lattice defects, impurities, etc.) that function as paths for magnetic flux and spin current can be contained inside the minute particles composed of the insulating topological antiferromagnetic substance, and a large number of similar defects can also remain in the particles formed by agglomerating the minute particles.

[0037] (7) In still another preferred example of the anisotropic conductive film of the present application, the thickness of the insulating film is smaller than twice the median particle diameter of the particles.

[0038] In this example, since the thickness of the insulating film is smaller than twice the median particle diameter of the particles, inside the insulating film, the individual particles are reliably arranged at intervals in the in-plane direction thereof. Thus, the following advantages are obtained: a film (single-particle film) in which the individual particles are reliably arranged at intervals in a row inside the insulating film can be obtained.

[0039] (8) In still another preferred example of the anisotropic conductive film of the present application, when the insulating thin film is formed, a magnetic field of an intensity in a range from a critical magnetic field Hcl at which the inside of the particles starts to be invaded from the applied magnetic field to a critical magnetic field Hc2 at which the magnetization saturates in the direction of the magnetic field and the direction of the magnetization starts to be disturbed (for example, 10 2±1 Gauss) is applied, whereby the magnetic anisotropy of the particles is imparted.

[0040] In this example, since the excessive aggregation of the particles is suppressed when the insulating thin film is formed, the particles do not flow in the in-plane direction of the insulating thin film. Therefore, the advantage that spin current can be reliably generated in the plurality of conductive portions can be obtained.

[0041] (9) The conductive connector of the present application is a conductive connector for an inspection device that performs transmission and reception of electric signals between an inspection object and the inspection device in a state in which a plurality of terminals of the inspection object are in contact, characterized by comprising: a first anisotropic conductive film formed of the anisotropic conductive film described in any one of the above (1) to (8); a second anisotropic conductive film stacked on the first anisotropic conductive film and formed of the anisotropic conductive film described in any one of the above (1) to (8); and a plurality of movable electrodes disposed between the first anisotropic conductive film and the second anisotropic conductive film and capable of moving in the stacking direction of the second anisotropic conductive film, the plurality of movable electrodes are respectively disposed at positions matching the positions of the plurality of terminals.

[0042] The conductive connector of the present application is configured to comprise a first anisotropic conductive film formed of the anisotropic conductive film described in any one of the above (1) to (8), a second anisotropic conductive film stacked on the first anisotropic conductive film and formed of the anisotropic conductive film described in any one of the above (1) to (8), and a plurality of movable electrodes disposed between the first anisotropic conductive film and the second anisotropic conductive film and capable of moving in the stacking direction of the second anisotropic conductive film. Therefore, in a state in which the inspection object and the inspection device are sandwiched, when a pressure is applied in the stacking direction, each of the plurality of movable electrodes comes into contact with and electrically conducts with one or more of the conductive portions of the first anisotropic conductive film corresponding thereto and comes into contact with and electrically conducts with one or more of the conductive portions of the second anisotropic conductive film corresponding thereto. Therefore, by performing transmission and reception of electric signals between the inspection object and the inspection device, the inspection object can be subjected to a desired inspection by the inspection device.

[0043] Since the first anisotropic conductive film and the second anisotropic conductive film are each formed of the anisotropic conductive film described in any one of the above (1) to (8), the resistance of the first anisotropic conductive film and the second anisotropic conductive film becomes extremely low due to the same reasons as described in the above (1) regarding the anisotropic conductive film. For example, the resistance becomes an extremely low resistance to the same extent as a superconducting phenomenon. The resistance of the conductive connector of the present application is only the resistance of the plurality of movable electrodes added to the extremely low resistance of the first anisotropic conductive film and the second anisotropic conductive film, and thus the resistance of the conductive connector is also suppressed to a degree slightly greater than the total of the resistance of the first anisotropic conductive film and the second anisotropic conductive film.

[0044] In addition, regarding the first anisotropic conductive film and the second anisotropic conductive film, by achieving such an extremely low resistance, the high frequency characteristics of the conductive connector are improved, and high current thereof can also be achieved.

[0045] Further, due to the same reasons as described in the above (1) regarding the anisotropic conductive film, a higher resolution than ever before can be achieved, and a fine pitch required for further miniaturization and high integration of future ICs can also be satisfied.

[0046] Further, due to the same reasons as described in the above (1) regarding the anisotropic conductive film, in a state of being sandwiched between the inspection object and the inspection device, only an extremely low pressure needs to be applied in the stacking direction, in other words, each of the plurality of movable electrodes is brought into conduction with the corresponding one or more of the conductive portions of the first anisotropic conductive film and the corresponding one or more of the conductive portions of the second anisotropic conductive film with an extremely small contact pressure. Therefore, compared to the past, the contact stability is improved.

[0047] Further, as described above, due to the fact that, in a state of being sandwiched between the inspection object and the inspection device, only an extremely low pressure needs to be applied in the stacking direction for each of the plurality of movable electrodes to be brought into conduction with the corresponding one or more of the conductive portions of the first anisotropic conductive film and the corresponding one or more of the conductive portions of the second anisotropic conductive film, the displacement amount of the first anisotropic conductive film and the second anisotropic conductive film can be greatly reduced. Therefore, the durability of the conductive connector is improved.

[0048] (10) In the preferred example of the conductive connector of the present application, each of the plurality of movable electrodes is formed of a rigid material in a substantially circular plate shape, The plurality of movable electrodes are capable of moving between the first anisotropic conductive film and the second anisotropic conductive film without using a holding layer, In a state of being sandwiched between the inspection object and the inspection device, when a pressure is applied in the stacking direction, each of the plurality of movable electrodes is configured to come into contact with and make conduction with the corresponding one or more conductive portions of the first anisotropic conductive film, and come into contact with and make conduction with the corresponding one or more conductive portions of the second anisotropic conductive film.

[0049] In this example, since each of the plurality of movable electrodes is formed of a substantially circular plate-shaped rigid material, and the plurality of movable electrodes are capable of moving between the first anisotropic conductive film and the second anisotropic conductive film without using a holding layer, it has the advantage that the contact and conduction of each of the plurality of movable electrodes with the corresponding one or more conductive portions of the first anisotropic conductive film and the corresponding one or more conductive portions of the second anisotropic conductive film become more reliable.

[0050] (11) In other preferred examples of the conductive connector of the present application, On one side of the first anisotropic conductive film of the plurality of movable electrodes, or on one side of the second anisotropic conductive film of the plurality of movable electrodes, a third anisotropic conductive film is further provided, which is stacked on the first anisotropic conductive film and the second anisotropic conductive film, The third anisotropic conductive film is formed of the anisotropic conductive film described in any one of the above (1) to (8).

[0051] In this example, since the third anisotropic conductive film is further added, it has the advantage that when absorbing the dimensional difference of the interval between the inspection object and the inspection device, compared with the case where only the first anisotropic conductive film and the second anisotropic conductive film are present, the displacement amount of each of the first anisotropic conductive film, the second anisotropic conductive film, and the third anisotropic conductive film can be reduced.

[0052] (12) The conductive structure of the present application is a conductive structure that can be used as a conductive portion of an anisotropic conductive film, characterized in that, contains at least one substantially spherical particle formed of a substance having a topological antiferromagnetic property, The particle has magnetic anisotropy and has a south pole region and a north pole region formed at both ends in a direction along its easy magnetization direction, When a voltage is applied between the south pole region and the north pole region: (a) the surface and interface of the minute particle become a topological superconducting state; (b) a spin current flows at a site between the south pole region and the north pole region; (c) an electric current flows at a site from the outside to the south pole region of the particle and at a site from the outside to the north pole region of the particle; (d) an electric current · spin current conversion is generated at the south pole region and the north pole region, Thereby, electric conduction through the particle is achieved.

[0053] In the conductive structure of the present application, by the above means, electric conduction through the conductive structure is achieved, and thus the resistance of an anisotropic conductive film using the conductive structure becomes very low. For example, it becomes an extremely low resistance to the same degree as generating a superconducting phenomenon.

[0054] In addition, by achieving such an extremely low resistance, the high frequency characteristics of the anisotropic conductive film are improved, and in addition, its high current can also be achieved.

[0055] Further, since the particle is formed of a substance having a topological antiferromagnetic property, it has magnetic anisotropy, and thus by orienting the easy magnetization direction of the particle in the thickness direction of the anisotropic conductive film, the arrangement pitch of a plurality of conduction portions arranged inside the anisotropic conductive film can be refined to the same degree as the particle diameter of the particle. Therefore, a higher resolution than ever before can be achieved, and a fine pitch required for further miniaturization and high integration of future ICs can also be satisfied.

[0056] Further, it is presumed that the spin current flowing inside the particle is conducted by quantum mechanical tunneling effect, across a potential barrier without damaging an insulating film such as an oxide film existing on the surface of an electrode, terminal, or the like as a contact object, and thus the contact object only needs to be pressed to the anisotropic conductive film with an extremely low pressure, in other words, with a very small contact pressure, to make the contact object conduct with a plurality of the conduction portions. Therefore, compared to the past, the contact stability is improved.

[0057] Further, as described above, the contact object only needs to be pressed to the anisotropic conductive film with an extremely low pressure and contact pressure to make the contact object electrically conduct with a plurality of the conduction portions, and thus the displacement amount of the anisotropic conductive film can be greatly reduced. Therefore, the durability of the anisotropic conductive film is improved.

[0058] (13) In the preferred example of the conductive structure of the present application, the substance having the topological antiferromagnetic property that forms the particle is NiO, i.e., nickel oxide, or MnO, i.e., manganese oxide. In this case, the metal Ni or the metal Mn that is the source of the NiO or the MnO is preferably metal Ni or metal Mn refined by the carbonyl method. This is because, according to the research by the present inventors and others, in the case of using metal Ni or metal Mn refined by the carbonyl method, the most preferable results are obtained in both the exertion of the current-spin current conversion and the exertion of the function as the second superconductor within the range known at present.

[0059] In addition to NiO and MnO, Cr2O3, Mn3Ge, Mn3Sn, MnS, MnTe, MnF2, FeF2, FeCl2, FeO, CoCl2, CoO, NiCl2, NiO, Cr can also be used. Among these, MnTe (307 K), FeO (298 K), CoO (291 K), Cr (308 K) have a Néel temperature of 0°C or higher and are easy to utilize their antiferromagnetic properties, and are therefore preferable.

[0060] (14) In another preferred example of the conductive structure of the present application, the particle is a substantially spherical particle in which minute particles composed of a substance having the topological antiferromagnetic property are condensed and the diameter is in the range of approximately 0.1 μm to 10 μm, minute protrusions formed of the minute particles and having a height difference in the range of approximately 10 nm to 100 nm exist on the surface of the substantially spherical particle.

[0061] In this example, it has the advantage that a large number of defects (minute voids, lattice defects, impurities, etc.) that function as paths for magnetic flux and spin current can be contained inside the minute particles composed of a substance having the topological antiferromagnetic property, and a large number of similar defects can also remain in the particle in which the minute particles are condensed.

[0062] (15) In still another preferred example of the conductive structure of the present application, when an insulating film is formed, the particle is magnetized by applying a magnetic field in the range from the critical magnetic field Hcl at which the inside of the particle is invaded from the applied magnetic field to the critical magnetic field Hc2 at which magnetization saturation is reached in the direction of the magnetic field and the direction of the magnetization begins to become disordered (for example, 10 2±1 Gauss), thereby giving the particle magnetization.

[0063] In this example, since the excessive condensation of the particle is suppressed when the insulating film is formed, there is no concern that the particle will flow in the in-plane direction of the insulating film. Therefore, the advantage that spin current can be reliably generated inside the particle can be obtained. Effects of the Invention

[0064] In the anisotropic conductive film, the conductive connector, and the conductive structure of the present application, the following effects can be achieved: low resistance, improvement in high frequency characteristics, high resolution, improvement in contact stability due to reduction in contact pressure, high current, and improvement in durability. BRIEF DESCRIPTION OF DRAWINGS

[0065] Figure 1 (a) is a schematic cross-sectional view showing a use state of a conductive connector of a first embodiment of the present application, (b) is a schematic exploded explanatory view showing a structure of the conductive connector, and (c) is a conceptual view showing clusters dispersed in an anisotropic conductive film (cluster film) of the conductive connector. Figure 2 (a) of FIG. 1 is a schematic cross-sectional view showing a use state of a conductive connector of a first embodiment of the present application, (b) is a schematic exploded explanatory view showing a structure of the conductive connector, and (c) is a conceptual view showing clusters dispersed in an anisotropic conductive film (cluster film) of the conductive connector. Figure 1 (a) of FIG. 1 is a schematic cross-sectional view showing a use state of a conductive connector of a first embodiment of the present application, (b) is a schematic exploded explanatory view showing a structure of the conductive connector, and (c) is a conceptual view showing clusters dispersed in an anisotropic conductive film (cluster film) of the conductive connector. Figure 3 (a) of FIG. 1 is a schematic cross-sectional view showing a use state of a conductive connector of a first embodiment of the present application, (b) is a schematic exploded explanatory view showing a structure of the conductive connector, and (c) is a conceptual view showing clusters dispersed in an anisotropic conductive film (cluster film) of the conductive connector. Figure 2 (a) of FIG. 1 is a schematic cross-sectional view showing a use state of a conductive connector of a first embodiment of the present application, (b) is a schematic exploded explanatory view showing a structure of the conductive connector, and (c) is a conceptual view showing clusters dispersed in an anisotropic conductive film (cluster film) of the conductive connector. Figure 4 (a) of FIG. 1 is a schematic cross-sectional view showing a use state of a conductive connector of a first embodiment of the present application, (b) is a schematic exploded explanatory view showing a structure of the conductive connector, and (c) is a conceptual view showing clusters dispersed in an anisotropic conductive film (cluster film) of the conductive connector. Figure 1 (a) of FIG. 1 is a schematic cross-sectional view showing a use state of a conductive connector of a first embodiment of the present application, (b) is a schematic exploded explanatory view showing a structure of the conductive connector, and (c) is a conceptual view showing clusters dispersed in an anisotropic conductive film (cluster film) of the conductive connector. Figure 5 (a) of FIG. 1 is a schematic cross-sectional view showing a use state of a conductive connector of a first embodiment of the present application, (b) is a schematic exploded explanatory view showing a structure of the conductive connector, and (c) is a conceptual view showing clusters dispersed in an anisotropic conductive film (cluster film) of the conductive connector. Figure 1 (a) of FIG. 1 is a schematic cross-sectional view showing a use state of a conductive connector of a first embodiment of the present application, (b) is a schematic exploded explanatory view showing a structure of the conductive connector, and (c) is a conceptual view showing clusters dispersed in an anisotropic conductive film (cluster film) of the conductive connector. Figure 6 (a) of FIG. 1 is a schematic cross-sectional view showing a use state of a conductive connector of a first embodiment of the present application, (b) is a schematic exploded explanatory view showing a structure of the conductive connector, and (c) is a conceptual view showing clusters dispersed in an anisotropic conductive film (cluster film) of the conductive connector. Figure 1 (a) of FIG. 1 is a schematic cross-sectional view showing a use state of a conductive connector of a first embodiment of the present application, (b) is a schematic exploded explanatory view showing a structure of the conductive connector, and (c) is a conceptual view showing clusters dispersed in an anisotropic conductive film (cluster film) of the conductive connector. Figure 7 is a schematic explanatory view of a manufacturing process of an anisotropic conductive film (single particle film, cluster film) used for the conductive connector of Figure 1 Figure 8 is a schematic explanatory view of a manufacturing process of an anisotropic conductive film (single particle film, cluster film) used for the conductive connector of Figure 1 Figure 9 is a schematic explanatory view of a process of imparting magnetic anisotropy and quantum effect to particles (and minute particles forming the particles) included in an anisotropic conductive film (single particle film, cluster film) used for the conductive connector of Figure 1 Figure 10 is a schematic explanatory view of a condition in which magnetic anisotropy imparted to particles (and minute particles forming the particles) included in an anisotropic conductive film (single particle film, cluster film) used for the conductive connector of Figure 1 Figure 11 is a schematic explanatory view of a condition in which a spin current path and a current path are formed differently according to a condition of magnetic anisotropy imparted to particles in an anisotropic conductive film (single particle film, cluster film) used for the conductive connector of Figure 1 (a) of FIG. 23 is a schematic explanatory view of a condition in which electrical conduction is achieved through an insulating film possessed by particles included in an anisotropic conductive film (single particle film, cluster film) used for the conductive connector of Figure 12 (b) of FIG. 23 is a schematic explanatory view of a current path and a spin current path formed in the particles. Figure 1 Figure 13 is a schematic explanatory view of a condition in which a high-efficiency spin current is generated by passing a current along magnetic anisotropy of particles included in an anisotropic conductive film (single particle film, cluster film) used for the conductive connector of Figure 1 Figure 14 is a schematic explanatory view of a condition in which a spin current path and a current path are formed differently according to a condition of magnetic anisotropy imparted to particles in an anisotropic conductive film (single particle film, cluster film) used for the conductive connector of Figure 1 ​​​​​​An illustrative diagram of the interior of particles contained in the anisotropic conductive film (single-particle film, cluster film) used in the conductive connector, the south and north polar regions generated in the skyrmion set, and the multiple spin flow path candidates generated between the south and north polar regions. Figure 15 (a) is Figure 1 (a) is a plan view of the anisotropic conductive film (single particle film, cluster film) used in the conductive connector, and (b) is a cross-sectional view of it, schematically showing the spin flow in a portion selected from multiple spin flow path candidates. Figure 16 It indicates that it flows through Figure 1 A diagram illustrating the spin flow of conductive sections of different sizes in anisotropic conductive films (single particle films, cluster films) used in conductive connectors. Figure 17 It means Figure 1 A schematic flowchart of the manufacturing method of anisotropic conductive films (single particle films, cluster films) used in conductive connectors. Figure 18 This indicates that the measurement is performed using the four-terminal measurement method. Figure 1 The circuit structure is illustrated in the diagram below when the resistance of the conductive connector is considered. Figure 19 This is a schematic cross-sectional view showing the structure of the conductive connector according to the second embodiment of the present invention. Detailed Implementation

[0066] The preferred embodiments of the present invention will now be described in detail with reference to the accompanying drawings. Furthermore, the dimensions, materials, and specific numerical values ​​shown in these embodiments are merely examples to facilitate understanding of the present invention and do not limit the invention unless otherwise stated. Additionally, elements with substantially the same function or structure are omitted from repeated descriptions by using the same reference numerals, and elements not directly related to the present invention are omitted from illustration.

[0067] (Structure of the conductive connector 100 according to the first embodiment of the present invention) To facilitate understanding, the conductive connector 100 of the first embodiment of the present invention will be described first, and then the first anisotropic conductive film 110, the second anisotropic conductive film 130, and the movable electrode 120 used in the conductive connector 100 will be described.

[0068] Figure 1 (a) is a schematic diagram illustrating the usage state of the conductive connector 100 according to the first embodiment of the present invention. Figure 1 (b) is an exploded diagram illustrating the structure of the conductive connector 100. Figure 1(c) is a conceptual diagram illustrating the particles 200 and the clusters 210 thereof used for the conductive connector 100.

[0069] In wafer testing in the manufacturing process of ICs, the operation of the circuit 302 constituting the IC formed on the inspection object, i.e., the silicon wafer 300, is confirmed. Figure 1 The conductive connector 100 shown in (a) is used for a probe provided on a test head 400 of a semiconductor testing device (not shown). In performing wafer testing, a plurality of terminals 304 of the circuit 302 on the wafer 300 and a plurality of electrodes 404 corresponding to the terminals 304 of the test head 400 are electrically connected via the conductive connector 100, and in this state, electric signals are transmitted and received between the semiconductor testing device and the circuit 302, thereby checking the electrical characteristics of the circuit 302. The conductive connector 100 of the first embodiment of the present application is used for such a use.

[0070] The conductive connector 100 of the first embodiment of the present application has the following structure. That is, as shown in Figure 1 As shown in (a), from the circuit 302 of the wafer 300 toward the test head 400 of the semiconductor testing device (in Figure 1 In (a), upward), a single particle film (first anisotropic conductive film) 110, a plurality of movable electrodes 120 in a circular plate shape (coin tablet type), and a cluster film (second anisotropic conductive film) 130 are sequentially stacked to constitute a three-layer structure. The plurality of movable electrodes 120 in a circular plate shape are arranged at intervals in one plane in the space between the single particle film 110 and the cluster film 130, and are substantially parallel to the single particle film 110 and the cluster film 130. The single particle film 110 and the cluster film 130 are also substantially parallel to each other.

[0071] Each electrode 404 of the test head 400 is located at a position overlapping the terminal 304 at the corresponding position (i.e., directly below) on the wafer 300. Each movable electrode 120 is located at a position overlapping both the electrode 404 of the test head 400 at the corresponding position (i.e., directly above) and the terminal 304 on the wafer 300 at the corresponding position (i.e., directly below).

[0072] As shown in Figure 1 As shown in (a) and (b), the first anisotropic conductive film 110 has a structure in which the particles 200 in the spaced state are arranged at intervals in the in-plane direction thereof, and only a single particle 200 exists in the thickness direction thereof. Therefore, in the following description, the first anisotropic conductive film 110 is also referred to as a single particle film.

[0073] As shown in Figure 1As shown in (b), the single-particle film (first anisotropic conductive film) 110 has a structure in which multiple particles 200 are dispersed in an insulating film 112 made of an elastic insulating polymer material in a manner that forms a single-particle layer. Inside the insulating film 112, the particles 200 are spaced apart along the in-plane direction of the insulating film 112, but only a single particle 200 exists in the thickness direction of the insulating film 112; in other words, only spaced particles 200 exist. That is, there are no clusters 210 of particles 200 inside the insulating film 112.

[0074] The particles 200 present inside the insulating film 112 are spaced apart in the in-plane direction of the insulating film 112, forming a conductive portion 114 that enables electrical conduction in the thickness direction of the insulating film 112. The spacing between two adjacent particles 200 is set to such a value that even when the single particle film 110 is brought into contact with the terminal 304 on the wafer 300, and electrical conduction is generated in the thickness direction of the insulating film 112 in the conductive portion 114 formed by these particles 200, electrical conduction is not generated between these particles 200 (conductive portion 114) in the in-plane direction of the insulating film 112.

[0075] like Figure 1 As shown in (b), the upper and lower ends of each particle 200 (i.e., each conductive portion 114) are exposed on the upper and lower surfaces of the insulating film 112, respectively. Therefore, the upper ends of each particle 200, i.e., each conductive portion 114, are always in contact with the movable electrode 120 located at its corresponding position (i.e., directly above). On the other hand, the lower ends of each particle 200, i.e., each conductive portion 114, can contact the terminals 304 on the wafer 300 located at its corresponding position (i.e., directly below). Moreover, after the lower ends of each conductive portion 114 are in contact with the terminals 304 on the wafer 300 located at its corresponding position (directly below), when a voltage is applied across the conductive portion 114 (the particle 200), the quantum effect of the particle 200 is exerted, and the flow of electron spin (spin flow) flows through the conductive portion 114 (the particle 200) in the vertical direction (the thickness direction of the insulating film 112). As a result, electrical conduction is achieved between the movable electrode 120 located at the corresponding position (i.e., directly above) of the conductive part 114 (the particle 200) and the terminal 304 located at the corresponding position (i.e., directly below) of the conductive part 114 (the particle 200). Furthermore, details regarding the quantum effects possessed by the particle 200 will be explained later.

[0076] The second anisotropic conductive film 130 differs from the first anisotropic conductive film 110 in that it has a plurality of (in) aggregates condensed in its thickness direction. Figure 1agglomerates of the particles 200, i.e., the structure in which the clusters 210 of the particles 200 are arranged at intervals in the in-plane direction thereof, and only a single cluster 210 exists in the thickness direction thereof. Therefore, in the following description, the second anisotropic conductive film 130 is also referred to as a cluster film.

[0077] As shown in (b) of FIG. 1, the cluster film 130 has a structure in which a plurality of particles 200 identical to those used for the single particle film 110 are dispersed in an insulating film 132 composed of an elastic insulating polymer material. Inside the insulating film 132, the particles 200 are arranged at intervals in the in-plane direction of the insulating film 132. This is similar to the single particle film 110. However, a plurality of (here, two) of the particles 200 arranged inside the insulating film 132 are agglomerated in the thickness direction of the insulating film 132 to form clusters 210 of the particles 200, and the clusters 210 of the particles 200 are arranged at intervals in the in-plane direction of the insulating film 132. This is different from the single particle film 110. Figure 1

[0078] Further, only the clusters 210 of the particles 200 exist inside the cluster film 130. That is, no particles 200 in the state of being arranged at intervals as in the single particle film 110 exist inside the insulating film 132. Therefore, it can be said that inside the insulating film 132, the clusters 210 of the plurality of particles 200 are arranged at intervals in the in-plane direction of the insulating film 132.

[0079] The clusters 210 of the particles 200 existing inside the insulating film 132 are arranged at intervals in the in-plane direction of the insulating film 132 to form conductive portions 134 capable of achieving electrical conduction in the thickness direction of the insulating film 132. The interval between the two adjacent clusters 210 is set to a value such that even in a state in which the cluster film 130 is brought into contact with the electrode 404 of the probe card 400 and electrical conduction in the thickness direction of the insulating film 132 is generated in the conductive portions 134 formed by the clusters 210, electrical conduction in the in-plane direction of the insulating film 132 does not occur between the clusters 210 (the conductive portions 134).

[0080] As shown in (b) of FIG. 1, the cluster film 130 has a structure in which a plurality of particles 200 identical to those used for the single particle film 110 are dispersed in an insulating film 132 composed of an elastic insulating polymer material. Inside the insulating film 132, the particles 200 are arranged at intervals in the in-plane direction of the insulating film 132. This is similar to the single particle film 110. However, a plurality of (here, two) of the particles 200 arranged inside the insulating film 132 are agglomerated in the thickness direction of the insulating film 132 to form clusters 210 of the particles 200, and the clusters 210 of the particles 200 are arranged at intervals in the in-plane direction of the insulating film 132. This is different from the single particle film 110. Figure 1 ​exposed on the upper surface and the lower surface of the insulating thin film 132. Thus, the lower end of each cluster 210, i.e., each conduction portion 134, is always in contact with the movable electrode 120 present at the corresponding position (i.e., directly below) thereof. On the other hand, the upper end of each cluster 210, i.e., each conduction portion 134, can be in contact with the electrode 404 of the probe head 400 present at the corresponding position (i.e., directly above) thereof. Moreover, after the upper end of each conduction portion 134 is brought into contact with the electrode 404 of the probe head 400 present at the corresponding position (directly above) thereof, when a voltage is applied across the conduction portion 134 (the cluster 210), the quantum effect possessed by the particles 200 contained in the cluster 210 is exhibited, and the flow of electron spin (spin current) flows through the conduction portion 134 (the cluster 210) in the up-and-down direction (the thickness direction of the insulating thin film 132). As a result, the movable electrode 120 present at the corresponding position (i.e., directly below) of the conduction portion 134 (the cluster 210) is electrically connected to the electrode 404 present at the corresponding position (i.e., directly above) of the conduction portion 134 (the cluster 210). This is similar to the single particle film 110. Furthermore, the details of the quantum effect possessed by the particles 200 contained in the cluster 210 will be described later.

[0081] The clusters 210 of the particles 200 can be easily formed when forming the cluster film 130 by applying a magnetic field in the thickness direction of the cluster film 130 (the insulating thin film 132). This is because, by the applied magnetic field, the particles 200 can be condensed into a columnar shape in the direction of the magnetic field, i.e., the thickness direction of the cluster film 130 (the insulating thin film 132).

[0082] Furthermore, when the applied magnetic field is too strong, more particles 200 than the desired number are condensed in the interior of the insulating thin film 132 during the film formation process (before solidification), resulting in the formation of a block rather than a column. Moreover, when a large number of particles 200 form a block, the possibility of electrical conduction in the in-plane direction of the cluster film 130 becomes high. Therefore, when forming the cluster film 130, it is preferable to apply a magnetic field (e.g., 10 2±1 Gauss) in a range from the critical magnetic field Hcl at which the applied magnetic field starts to intrude into the particles 200 present in the interior of the cluster film 130 to the critical magnetic field Hc2 at which the magnetization is saturated in the direction of the magnetic field and the direction of the magnetization starts to be disordered.

[0083] Furthermore, in the case where the cluster film 130 is formed by the above-described method, the cluster film 130 can be formed by applying a magnetic field in the thickness direction of the insulating thin film 132. Figure 1In the conductive connector 100 shown in (a) and (b), a single particle film (first anisotropic conductive film) 110 and a cluster film (second anisotropic conductive film) 130, in other words, two pieces of the anisotropic conductive film of the present application, are used, but the present application is not limited thereto. Three or more pieces of the anisotropic conductive film of the present application can also be used. In the past, a method of absorbing a dimensional difference between the terminal 304 of the circuit 302 on the wafer 300 and the electrode 404 of the probe card 400 of the semiconductor testing device by laminating a plurality of pieces of the anisotropic conductive film has been adopted, but in this case, when three or more pieces of the anisotropic conductive film of the present application are used, compared with the conductive connector 100 of the first embodiment using two pieces of the anisotropic conductive film of the present application, it has an advantage that the displacement amount of the anisotropic conductive film of each layer can be further reduced. Thereby, the contact pressure generated between the anisotropic conductive film of each layer and the terminal 304 and the electrode 404 can be reduced, and the durability of the conductive connector 100 can be improved. (The conductive connector using three or more pieces of the anisotropic conductive film of the present application will be described in detail in the second embodiment of the present application described later.)

[0084] From the viewpoints of insulation and durability, the insulating film 112 for the single particle film 110 and the insulating film 132 for the cluster film 130 are each preferably a high molecular material having a crosslinked structure. Specifically, a room temperature vulcanized silicone rubber can be preferably used, but as long as it has insulation and a crosslinked structure, a high molecular material other than a silicone rubber can also be used. For example, as described in Japanese Patent No. 5777477 owned by the present applicant, conjugated diene-based rubbers such as polybutadiene rubber, natural rubber, polyisoprene rubber, styrene-butadiene copolymer rubber, acrylonitrile-butadiene copolymer rubber, and hydrogenated products thereof, block copolymer rubbers such as styrene-butadiene-diene block copolymer rubber, styrene-isoprene block copolymer, and hydrogenated products thereof, chlorobutyl rubber, polyurethane rubber, polyester-based rubber, epichlorohydrin rubber, silicone rubber, ethylene-propylene copolymer rubber, and ethylene-propylene-diene copolymer rubber can be listed.

[0085] Since the single particle film (first anisotropic conductive film) 110 has a structure in which the particles 200 are dispersed in the inside of the insulating thin film 112 made of an insulating elastic polymer material, it has flexibility (changeability) in the thickness direction thereof. That is, when a pressure is applied to an arbitrary portion, the thickness of the portion of the single particle film 110 changes (decreases) according to the pressure, and when the pressure disappears, it returns to the original thickness. However, the single particle film 110 is not stretchable in the in-plane direction thereof (i.e., it is inelastic in the in-plane direction). Therefore, the single particle film 110 can absorb dimensional errors of the interval between the terminals 304 of the wafer 300 and the movable electrodes 120, and thus can reliably come into contact with the terminals 304 and the movable electrodes 120 located on both sides of the single particle film 110.

[0086] The cluster film (second anisotropic conductive film) 130 is also similar to the single particle film 110. That is, since the cluster film 130 has a structure in which the clusters 210 of the particles 200 are dispersed in the inside of the insulating thin film 132 made of an insulating elastic polymer material, it has flexibility (changeability) in the thickness direction thereof, but is not stretchable in the in-plane direction thereof (i.e., it is inelastic in the in-plane direction). Therefore, the cluster film 130 can absorb dimensional errors of the interval between the electrodes 404 of the probe card 400 and the movable electrodes 120, and thus can reliably come into contact with the electrodes 404 and the movable electrodes 120 located on both sides of the cluster film 130.

[0087] Therefore, the single particle film 110 and the cluster film 130 can absorb dimensional errors of the interval between the terminals 304 and the electrodes 404, respectively, and thus can reliably come into contact with the terminals 304, the electrodes 404, and the movable electrodes 120 located on both sides thereof.

[0088] Here, the movable electrodes 120 are in the shape of a circular plate (coin flat type). The plurality of movable electrodes 120 are arranged at positions corresponding to the patterns of the terminals 304 of the wafer 300 and the patterns of the electrodes 404 of the probe card 400, in other words, in the same patterns as these patterns. There is no holding layer for holding these movable electrodes 120, and the plurality of movable electrodes 120 are arranged only in a layer form in the space between the single particle film 110 and the cluster film 130. Therefore, it can be said that the plurality of movable electrodes 120 form a movable electrode layer.

[0089] The movable electrodes 120 can preferably use a metal material having rigidity and desired conductivity. For example, single metals such as nickel (Ni), cobalt (Co), gold (Au), aluminum (Al), alloys thereof, and the like can be exemplified.

[0090] Further, the thickness (height) of each movable electrode 120 must be 25% or less of the total thickness of the laminated single particle film 110 and cluster film 130 (each being an anisotropic conductive film). This is to avoid breakage of the single particle film 110 and cluster film 130 due to excessive pressure, thereby achieving higher durability.

[0091] In addition, the displacement (compression amount) of the cluster film 130 arranged on the side of the probe card 400 is calculated by multiplying the thickness of the cluster film 130 by the compression rate, but the compression rate is preferably 5% or less of the thickness of the cluster film 130. Therefore, for example, when the thickness of the cluster film 130 is 10 μm, the compression amount of the cluster film 130 must be 5% or less of the thickness, i.e., 10 μm x 0.05 = 0.5 μm. That is, the compression amount of the cluster film 130 is preferably 0.5 μm or less. This is a necessary condition for achieving both zero force contact and high reliability. Further, in the case where a plurality of cluster films 130 are arranged on the side of the probe card 400, instead of the thickness of the cluster film 130, the total thickness of the plurality of cluster films 130 can be used.

[0092] The movable electrode 120 can be easily formed by a known method. For example, the method described in Japanese Patent No. 5777477 owned by the present applicant can be used.

[0093] Specifically, for example, first, a through-hole is formed in an insulating sheet (e.g., a polyimide resin), and then a mask layer (e.g., a Cu layer formed by electroless plating) is formed on the inner surface of the through-hole, and then a rigid conductor (e.g., using Ni electroforming plating) is formed on the inner side of the mask layer. Thereafter, a high molecular material (e.g., silicone rubber) mixed with particles (e.g., metal particles having magnetism such as Fe, Co, Ni, alloy particles thereof (particles containing these metals)) before cross-linking and curing is applied in contact with the rigid conductor, and then the high molecular material is cross-linked and cured to become an elastic substance, thereby forming an anisotropic conductive film (which forms the head portion of the movable electrode) joined to the rigid conductor. Then, the mask layer is removed by etching. In this way, the rigid conductor can be made into a movable electrode that is movable with respect to the insulating sheet.

[0094] The anisotropic conductive film that is joined to and integrated with the movable electrode (which is formed of the rigid conductor) forms a flange-like head portion of the movable electrode, but the process of applying the uncrosslinked and uncured polymer material into which the particles are mixed can be omitted without the anisotropic conductive film. In addition, the insulating sheet that supports and guides the movable electrode remains around the movable electrode in a state where the mask layer is removed, but the insulating sheet can be removed by etching or the like. Therefore, in the method described in Japanese Patent No. 5777477, if the process of applying the uncrosslinked and uncured polymer material into which the particles are mixed is omitted and the insulating sheet is removed by etching or the like, a coin flat-type movable electrode 120 having the structures of (a) and (b) shown in FIG. 10 can be obtained. Figure 2

[0095] The reason for using the movable electrode 120 is as follows. That is, the particles 200 composed of NiO as an insulating topological antiferromagnetic substance use metal Ni obtained by carbonyl refining as a raw material thereof. Therefore, there are minute protrusions on the surface of the minute particles of the metal Ni used for the particles 200. Therefore, if the metal Ni refined by the carbonyl method is used, good switching characteristics can be obtained, and excellent non-ohmic contact characteristics are exerted. However, since the minute protrusions are crushed quickly by pressure and impact received during use, there is a difficulty in that the two characteristics are not sustained. On the other hand, the rigid particles (for example, the particles 200) held in the elastic bodies like the insulating films 112 and 132 become "soft low-pressure contact", so the minute protrusions are difficult to be crushed, and thus, there is an advantage that the two characteristics are easily maintained. Moreover, when the rigid particles (the particles 200) indirectly contact the elastic bodies (the insulating films 112 and 132) with the movable electrode 120 interposed therebetween, stress received by the elastic bodies (the insulating films 112 and 132) is significantly reduced. Therefore, the electrical characteristics of the anisotropic conductive film like the single-particle film 110 and the cluster film 130 are improved, and as a result, an anisotropic conductive film having a small thickness and excellent electrical characteristics can be obtained. The movable electrode 120 is used because of such an advantage.

[0096] Next, the particles 200 used for the conductive connector 100 of the first embodiment of the present application will be described.

[0097] ​The conductive connector 100 of the first embodiment having the above structure uses particles 200 formed from nickel oxide (NiO), a material with topological antiferromagnetic properties, and thus possesses topological antiferromagnetic properties. However, the material of the particles 200 is metallic nickel (Ni), a material with ferromagnetic properties. Generally, topological antiferromagnetic materials have the special property that their interior is an insulator (no electrical conductivity) but their surface is a conductor (with electrical conductivity), and this property does not change even if the material is repeatedly condensed and broken. Here, "antiferromagnetism" refers to the magnetism of a material whose adjacent spins are aligned in opposite directions and which as a whole has no magnetic moment. Furthermore, antiferromagnetic materials (antiferromagnetic bodies) exhibit this property only at low temperatures below the Nell temperature. This also applies to the particles 200 with topological antiferromagnetic properties. In addition, since the particles 200 are formed from an aggregate of tiny particles 202 (see...), Figure 2 (a) and (b)), therefore this also applies to microparticle 202.

[0098] Particle 200 (and the microparticles 202 forming the particles) are manufactured as follows. Furthermore, the anisotropic conductivity and quantum effects possessed by particle 200 (and microparticles 202) are achieved by, in an insulating polymer material prepared for cross-linking and curing before the formation of a single-particle film (first anisotropic conductive film) 110 or a cluster film (second anisotropic conductive film) 130, […]. Figure 7 The generally spherical particles 200 (which are an aggregate of tiny particles 202) shown in (b) are added together with an adhesive during the process of forming the resulting material into a sheet to form an insulating film 112 or 132. Moreover, the anisotropic conductivity and quantum effects thus exhibited in the particles 200 are fixed (memorized) inside the cross-linked and cured insulating film 112 or 132.

[0099] In the first embodiment, firstly, as Figure 17 and Figure 7 As shown, the raw Ni stone prepared as material (refer to...) Figure 17 Phase 1 Figure 2 Step S1). The Ni raw material contains voids, lattice defects, impurities, etc., and has a low density. Specifically, it is 1.7~3.5 g / cm³. 3 Since the density of pure Ni crystal is 8.9 g / cm³. 3 Therefore, it can be concluded that the density of this Ni rough is quite low. Next, it is refined using the well-known carbonyl process (which involves converting an impure metal into a volatile compound, then thermally decomposing it to revert it back to the metal, thus refining the metal), resulting in a product like... Figure 7The thus obtained fine particles 202 are oxidized during the carbonyl process, and thus contain oxygen (O), and therefore the fine particles 202 are not formed of Ni but of NiO. However, the entirety of the fine particles 202 is not oxidized, and it is presumed that Ni remains directly inside, and the interface and surface layer inside are oxidized to become NiO. Hereinafter, for the sake of simplicity of explanation, the fine particles 202 (of the entirety) are described as NiO.

[0100] The surface of the fine particles 202 thus formed of NiO has fine protrusions (unevenness). In addition, the inside of the fine particles 202 has minute voids, crystal lattice defects, impurities, and the like (omitted from the drawing). These play an important role in the process of imparting and fixing the magnetic anisotropy of the fine particles 202. This will be described later.

[0101] Next, the fine particles 202 thus obtained of metal Ni are fired or sintered at an appropriate temperature in the range of 300 to 1200°C by a publicly known powder metallurgy method, to form an agglomerate (fired body or sintered body) of the fine particles 202.

[0102] Subsequently, the agglomerate of the fine particles 202 thus obtained is crushed by a publicly known grinding method, and then granulated and classified so as to be uniform in particle diameter, to obtain the substantially spherical particles 200 having a diameter (median particle diameter) in the range of substantially 0.1 to 10 μm (refer to Figure 17 Stage 2 of Figure 7 Step S2 of The substantially spherical particles 200 thus obtained are an agglomerate of the fine particles 202 of NiO, and therefore the particles 200 are also formed of NiO.

[0103] In addition, the substantially spherical particles 200 thus obtained are particles before the imparting of the magnetic anisotropy and the presentation of the quantum effect. Thereafter, in the process of performing the antiferromagnetic treatment (to be described later), the particles 200 (and the fine particles 202 that form the particles) are subjected to the imparting of the magnetic anisotropy and the presentation and fixation of the quantum effect (refer to Figure 17 Stage 3 of Figure 2 Steps S3 to S4 of

[0104] Since each particle 200 is formed by agglomerating the fine particles 202, as described above, the fine particles 202 are present in the inside of the particle 200, and the fine particles 202 are present on the surface of the particle 200. Figure 3As shown in (b), protrusions (undulations) 204 caused by microparticles 202 are formed on the surface of each particle 200. Furthermore, each particle 200 contains defects (microvoids, lattice defects, impurities, etc.) caused by microparticles 202. The protrusions (undulations) 204 and the defects of each particle 200 become pathways for magnetic flux and spin current (i.e., magnetic circuits).

[0105] As the material for the approximately spherical particles 200 possessing magnetic anisotropy and quantum effects, any material that acquires topological antiferromagnetic properties through post-processing such as heating and applying a magnetic field can be used. For example, NNiO (nickel oxide) used in the conductive connector 100 of the first embodiment has a Nell temperature of 0°C or higher at 525K, and is therefore particularly preferred. However, MnO (manganese oxide, with a Nell temperature of 116K) can also be preferred.

[0106] In addition, Cr2O3 (chromium oxide), Mn3Ge, Mn3Sn, MnS, MnTe, MnF2, FeF2, FeCl2, FeO, CoCl2, CoO, NiCl2, NiO, and Cr can also be used. Among them, MnTe (307K), FeO (298K), CoO (291K), and Cr (308K), which have a Nair temperature above 0℃, are preferred because they readily utilize their antiferromagnetism.

[0107] Furthermore, besides the carbonyl method used in this first embodiment, methods for generating the approximately spherical particles 200 prior to antiferromagnetic treatment include atomization (where molten metal or alloy flows out of a small hole at the bottom of a crucible to form a fine stream, and high-speed air, nitrogen, argon, water, etc. are sprayed onto it to disperse the molten liquid, and then it is rapidly cooled and solidified to generate powder of the metal or alloy) and electrolysis (where the raw material is electrolyzed, causing the powder of the raw material to be deposited at the cathode). However, according to the experiments of the present inventors, the desired good results can only be obtained when generated by the carbonyl method. Therefore, the approximately spherical particles 200 prior to antiferromagnetic treatment are preferably generated using the carbonyl method.

[0108] Figure 3 (a) is a graph comparing the PRESS-ON (pressure applied) load in the inventors' experiments, using a conductive connector 100 with particles 200 of metallic Ni generated by carbonylation and atomization. Figure 3 (b) is a diagram showing an outline of the measurement probes used in this experiment. Figure 3 (c) is an external view of the measuring apparatus used in this experiment. Figure 3 In (a), the load distribution at the time point when the resistor is cut off by 30Ω is shown, with a sample size (n) of 10.

[0109] From Figure 4 As is clear from (a) of FIG. 10, the PRESS-ON load is greatly reduced in the case of the metal Ni manufactured by the carbonyl method (carbonyl method nickel) as compared with the case of the metal Ni manufactured by the atomization method (atomization method nickel). Specifically, the PRESS-ON load in the case of the carbonyl method nickel is greatly reduced as compared with (1 / 10) in the case of the atomization method nickel, and it is clear that there is a large difference between them. When the PRESS-ON load in the case of the carbonyl method nickel is converted into the PRESS-ON load of an electrode having a diameter of 0.04 mm, it corresponds to 0.013 times the PRESS-ON load of an electrode having a diameter of 0.35 mm, and it is clear that the PRESS-ON load enters the region of mg. This means that, in the conductive connector 100 of the first embodiment using the carbonyl method nickel, the contact pressure (contact force) with the terminal 304 of the wafer 300 can be made very small.

[0110] The present inventors and others believe that the reason why the PRESS-ON load produces such a difference is that the fine particles 202 formed using the carbonyl method nickel have fine protrusions (irregularities) on the surface and have more defects (fine voids, strain, crystal lattice defects, impurities, etc.) in the interior than the fine particles manufactured by methods other than the carbonyl method such as the atomization method and the electrolytic method.

[0111] That is, in the fine particles 202 in which the particles 200 exhibiting the fixed state of the magnetic anisotropy and the quantum effect are formed, the surface and the interface become the topological superconducting state by becoming NiO, and it is presumed that the interior thereof maintains the ferromagnetic state of Ni, and therefore a part of the magnetic flux of the external magnetic field applied to the antiferromagnetic processing intrudes into the surface and the interface of the fine particles 202 in the topological superconducting state. The protrusions (irregularities) and the defects become escape passages of the magnetic flux that intrudes into the surface and the interface of the fine particles 202 in this way, and therefore the magnetic flux cannot move from the positions where the protrusions (irregularities) and the defects are present. As a result, it is presumed that the magnetic flux is pinned in the escape passages thereof, and the fine particles 202 exhibit the magnetic anisotropy.

[0112] Further, due to this magnetic anisotropy, the easy magnetization direction of the fine particles 202 (and the particles 200) rotates in the direction of the magnetic flux and is fixed in that direction, and therefore the easy magnetization direction of the fine particles 202 (and the particles 200) coincides with the direction of the magnetic flux.

[0113] Furthermore, the microparticles 202 (and 200) undergo antiferromagnetic treatment, which, in addition to the aforementioned magnetic anisotropy, also exhibit and fix quantum effects (skymone generation, tunneling magnetoresistance, current-spin-current conversion, etc.). Therefore, it is speculated that through this quantum effect, a spin current with approximately zero spin resistance or a current with very low current resistance flows through the conductive portion 114 of the single-particle film 110 or the conductive portion 134 of the cluster film 130. This is speculated to be the reason for the aforementioned differences in the PRESS-ON load. Further details regarding this quantum effect and its operation will be explained later.

[0114] Subsequently, referring to Figure 8 and Figure 4 The method for forming the single-particle film (first anisotropic conductive film) 110 and the cluster film (second anisotropic conductive film) 130 used in the conductive connector 100 of the first embodiment will be described. At this time, the magnetic anisotropy of the particulate particles 202b (and particles 200a) and the presentation and fixation of the quantum effects will also be described.

[0115] like Figure 17 As shown in (a), firstly, in the insulating polymer material prepared for curing as an insulating film 112 for forming a single-particle film (first anisotropic conductive film) 110, approximately spherical particles 200 with a diameter (median particle size) in the range of approximately 0.1 μm to 10 μm are added together with the binder as a raw material (see reference). Figure 17 (Step S3). Particle 200 and the tiny particle 202 that forms the particle are both particles before the above-mentioned attribution of magnetic anisotropy and the presentation of quantum effects are carried out, and therefore do not possess magnetic anisotropy and quantum effects.

[0116] Next, after evacuating the sheet-like cavity (not shown) inside the mold 500, the raw material is injected into the cavity. The mold 500 is equipped with a magnetic field generating device 520, which allows a magnetic field generated by its coil 522 to be applied to the cavity inside the mold 500 via its yoke 524. Therefore, a magnetic field is generated by the magnetic field generating device 520 and applied to the raw material inside the cavity via the mold 500. At the same time, the raw material inside the cavity is heated to a predetermined heating temperature (e.g., 100°C) by a heating device (not shown). After a predetermined time, both the application of the magnetic field and the heating are stopped, and then the material is left at room temperature for a predetermined time to allow it to crosslink and solidify. In this way, an insulating film 112 (i.e., a single-particle film 110) with particles 200 dispersed inside is obtained.

[0117] By applying the magnetic field and the heating, the particles 200 (and the minute particles 202 forming the particles) in the raw material exhibit the magnetic anisotropy and the quantum effect. Then, by standing at room temperature in a state where the application of the magnetic field and the heating is stopped, the magnetic anisotropy and the quantum effect exhibited by the particles 200 (and the minute particles 202 forming the particles) in the raw material are fixed (refer to steps S4 and S5 of Figure 4 ).

[0118] In addition, by the heating, the particles 200 in the raw material composed of NiO and the minute particles 202 forming the particles are hardly oxidized. This is because the metal Ni of the raw material is mostly oxidized when refined by the carbonyl method, and becomes nickel oxide (NiO). However, it is presumed that not all of the metal Ni changes to nickel oxide (NiO) at this time, and a part of the Ni located inside the minute particles 202 remains as it is, and thus it is considered that there is a part in a ferromagnetic state inside the minute particles 202.

[0119] Further, the strength of the magnetic field and the heating temperature are set in a range in which the particles 200 in the raw material and the minute particles 202 forming the particles exhibit the magnetic anisotropy and the quantum effect as desired.

[0120] The forming method of the cluster film (second anisotropic conductive film) 130 is the same as the forming method of the single particle film 110 except that the particles 200 in the interval state which become the single particle layer are replaced by the cluster 210 of 2 (or more than 3) particles 200 which are overlapped. Therefore, Figure 4 The film forming method of the insulating film 112 (the forming method of the single particle film 110) shown in (a) and (b) of Figure 4 The film forming method of the insulating film 132 (the forming method of the cluster film 130) shown in (a) and (c) of

[0121] Figure 4 The film forming method of the insulating film 112 (the forming method of the single particle film 110) shown in (a) and (b) of Figure 8 The film forming method of the insulating film 132 (the forming method of the cluster film 130) shown in (a) and (c) of Figure 8 may be carried out by the film forming apparatus shown in (a) of

[0122] Figure 8The film forming apparatus shown in (a) of FIG. 10 is configured so that, in order to form the raw material into a sheet shape, the raw material is caused to flow into a gap formed by an upper support 540 and a lower support 542 disposed opposite each other. The upper support 540 and the lower support 542 are each driven to rotate by a roller 530 and a roller 532, and are caused to move in parallel in the same direction (to the right in FIG. 10). The raw material flowing into the gap is caused to move in parallel in a horizontal plane in a state of being sandwiched by the upper support 540 and the lower support 542, and is formed into a sheet shape therebetween. During this period, a weak magnetic field generated by a coil 522 of a magnetic field generating apparatus 520 is applied to the raw material. In addition, the raw material is heated to a prescribed heating temperature (for example, 1000C) by a heating apparatus not shown. By applying the magnetic field and the heating (antiferromagnetic treatment), the particles 200 within the raw material and the minute particles 202 forming the particles exhibit the magnetic anisotropy and the quantum effect. This is the same as in the film forming apparatus shown in (a) of FIG. 9. Figure 4 The film forming apparatus shown in (a) of FIG. 10 is configured so that, in order to form the raw material into a sheet shape, the raw material is caused to flow into a gap formed by an upper support 540 and a lower support 542 disposed opposite each other. The upper support 540 and the lower support 542 are each driven to rotate by a roller 530 and a roller 532, and are caused to move in parallel in the same direction (to the right in FIG. 10). The raw material flowing into the gap is caused to move in parallel in a horizontal plane in a state of being sandwiched by the upper support 540 and the lower support 542, and is formed into a sheet shape therebetween. During this period, a weak magnetic field generated by a coil 522 of a magnetic field generating apparatus 520 is applied to the raw material. In addition, the raw material is heated to a prescribed heating temperature (for example, 1000C) by a heating apparatus not shown. By applying the magnetic field and the heating (antiferromagnetic treatment), the particles 200 within the raw material and the minute particles 202 forming the particles exhibit the magnetic anisotropy and the quantum effect. This is the same as in the film forming apparatus shown in (a) of FIG. 9. Figure 8 The film forming apparatus shown in (a) of FIG. 10 is configured so that, in order to form the raw material into a sheet shape, the raw material is caused to flow into a gap formed by an upper support 540 and a lower support 542 disposed opposite each other. The upper support 540 and the lower support 542 are each driven to rotate by a roller 530 and a roller 532, and are caused to move in parallel in the same direction (to the right in FIG. 10). The raw material flowing into the gap is caused to move in parallel in a horizontal plane in a state of being sandwiched by the upper support 540 and the lower support 542, and is formed into a sheet shape therebetween. During this period, a weak magnetic field generated by a coil 522 of a magnetic field generating apparatus 520 is applied to the raw material. In addition, the raw material is heated to a prescribed heating temperature (for example, 1000C) by a heating apparatus not shown. By applying the magnetic field and the heating (antiferromagnetic treatment), the particles 200 within the raw material and the minute particles 202 forming the particles exhibit the magnetic anisotropy and the quantum effect. This is the same as in the film forming apparatus shown in (a) of FIG. 9.

[0123] As shown in the right drawing of FIG. 10, by leaving the raw material formed into a sheet shape in a state of being stopped from being applied with the magnetic field and the heating, and by leaving it at room temperature, the raw material formed into a sheet shape is cross-linked and solidified in the state as it is. Thus, the magnetic anisotropy and the quantum effect exhibited by the particles 200 within the raw material and the minute particles 202 forming the particles are fixed. In this way, an insulating thin film 112 or 132 in which the particles 200 are dispersed within the interior (i.e., a single particle film 110 or a cluster film 130) can be obtained. This is the same as in the film forming apparatus shown in (a) of FIG. 9. Figure 4 As shown in the right drawing of FIG. 10, by leaving the raw material formed into a sheet shape in a state of being stopped from being applied with the magnetic field and the heating, and by leaving it at room temperature, the raw material formed into a sheet shape is cross-linked and solidified in the state as it is. Thus, the magnetic anisotropy and the quantum effect exhibited by the particles 200 within the raw material and the minute particles 202 forming the particles are fixed. In this way, an insulating thin film 112 or 132 in which the particles 200 are dispersed within the interior (i.e., a single particle film 110 or a cluster film 130) can be obtained. This is the same as in the film forming apparatus shown in (a) of FIG. 9. Figure 4 The film forming apparatus shown in (a) of FIG. 10 is configured so that, in order to form the raw material into a sheet shape, the raw material is caused to flow into a gap formed by an upper support 540 and a lower support 542 disposed opposite each other. The upper support 540 and the lower support 542 are each driven to rotate by a roller 530 and a roller 532, and are caused to move in parallel in the same direction (to the right in FIG. 10). The raw material flowing into the gap is caused to move in parallel in a horizontal plane in a state of being sandwiched by the upper support 540 and the lower support 542, and is formed into a sheet shape therebetween. During this period, a weak magnetic field generated by a coil 522 of a magnetic field generating apparatus 520 is applied to the raw material. In addition, the raw material is heated to a prescribed heating temperature (for example, 1000C) by a heating apparatus not shown. By applying the magnetic field and the heating (antiferromagnetic treatment), the particles 200 within the raw material and the minute particles 202 forming the particles exhibit the magnetic anisotropy and the quantum effect. This is the same as in the film forming apparatus shown in (a) of FIG. 9.

[0124] By the heating, the particles 200 within the raw material composed of metal Ni and the minute particles 202 forming the particles are not oxidized, similarly to the foregoing. The particles 200 within the raw material having the magnetic anisotropy and the quantum effect and the minute particles 202 forming the particles are formed of nickel oxide (NiO), not metal Ni. However, it is presumed that not all of the metal Ni changes to nickel oxide (NiO), and a portion of the Ni located in the interior of the minute particles 202 remains as it is, and thus it is considered that there is a portion in a ferromagnetic state in the interior of the minute particles 202. This is the same as in the film forming apparatus shown in (a) of FIG. 9. Figure 10 The film forming apparatus shown in (a) of FIG. 10 is configured so that, in order to form the raw material into a sheet shape, the raw material is caused to flow into a gap formed by an upper support 540 and a lower support 542 disposed opposite each other. The upper support 540 and the lower support 542 are each driven to rotate by a roller 530 and a roller 532, and are caused to move in parallel in the same direction (to the right in FIG. 10). The raw material flowing into the gap is caused to move in parallel in a horizontal plane in a state of being sandwiched by the upper support 540 and the lower support 542, and is formed into a sheet shape therebetween. During this period, a weak magnetic field generated by a coil 522 of a magnetic field generating apparatus 520 is applied to the raw material. In addition, the raw material is heated to a prescribed heating temperature (for example, 1000C) by a heating apparatus not shown. By applying the magnetic field and the heating (antiferromagnetic treatment), the particles 200 within the raw material and the minute particles 202 forming the particles exhibit the magnetic anisotropy and the quantum effect. This is the same as in the film forming apparatus shown in (a) of FIG. 9.

[0125] Next, with reference to Figure 11 , Figure 4 , Figure 4(b) and (c) of FIG. 12, the magnetic field applied to the cavity of the mold 500 is described.

[0126] According to the research by the present inventors, the magnetic field is preferably a parallel magnetic field, but the strength thereof is preferably within a range. The preferable range is a range of 10 2 Gauss 3 Gauss. That is, if the lower limit thereof is set to Hcl and the upper limit thereof is set to Hc2, the lower limit Hcl is 10 2 (= 100) Gauss, and the upper limit Hc2 is 10 3 (= 100) Gauss. In Figure 10 In (b) and (c) of FIG. 12, a parallel magnetic field within such a preferable range (i.e., between the lower limit Hcl and the upper limit Hc2) is applied as the magnetic field.

[0127] As Figure 11 clearly shown, it is known that, in order to exhibit and establish the magnetic anisotropy of the particles 200 (and the minute particles 202 forming the particles) in the raw material, it is preferable to set the strength of the magnetic field to the strength of the lower limit Hcl of the preferable range, i.e., 10 2 (= 100) Gauss. In this case, the present inventors believe that, since the magnetic moments (minute magnets) of the granular particles 202b in the raw material are all aligned in the direction of the magnetic flux of the magnetic field, the highest degree of magnetic anisotropy is exhibited in the particles 200 (and the minute particles 202) in the raw material. The strength of the magnetic field is set to the strength of the lower limit Hcl of the preferable range is the single particle film 110 in which only the particles 200 in the spaced state exist inside the insulating film 112.

[0128] Therefore, the strength of the virtual magnetic field generated in the particles 200 (and the minute particles 202) in the raw material becomes the highest level, and as a result, it is believed that the exhibition of the quantum effect (the generation of a SQUID, the tunneling magnetoresistance effect, the current-spin current conversion, and the like) exhibited in the particles 200 (and the minute particles 202) in the raw material is maximized. In this case, as Figure 11 shown in FIG. 13, since the spin current resistance Rs is substantially zero, in the conduction path 114 of the single particle film 110, conduction in which the resistance is substantially zero is achieved.

[0129] When the strength of the magnetic field applied to the particles 200 (and the minute particles 202) in the raw material is set to the upper limit Hc2 of the preferable range, i.e., 10 3(= 1000) Gauss, it is considered that the magnetic anisotropy of the particles 200 (and the minute particles 202 forming the particles) in the raw material becomes disordered. This means that the magnetic moments (minute magnets) possessed by the minute particles 202 are not all aligned in the direction of the magnetic flux of the magnetic field, and part of the magnetic moments (minute magnets) deviate from the direction of the magnetic flux of the magnetic field. As a result, it is considered that the level of the magnetic anisotropy is reduced compared to the case where the strength of the magnetic field is set to the strength of the lower limit Hcl of the preferred range. The case where the strength of the magnetic field is set to the strength of the upper limit Hc2 of the preferred range is the cluster film 130 in which only the particle clusters 210 in the spaced state exist inside the insulating thin film 132.

[0130] Therefore, the strength of the virtual magnetic field generated in the particles 200 (and the minute particles 202) in the raw material is lower than the above-mentioned maximum level. As a result, it is considered that the level of the quantum effect exhibited in the particles 200 (and the minute particles 202) in the raw material is also lower than the above-mentioned maximum level. In this case, as shown in FIG. 6, the spin current resistance Rs is substantially zero, but since the current resistance Re is a finite value exceeding zero, the resistance of the sum of the spin current resistance Rs and the current resistance Re is also a finite value exceeding zero. Therefore, in the conduction path 134 of the cluster film 130, it is possible to achieve a conduction in which the resistance is suppressed to a lower value exceeding zero. Figure 11 As shown in FIG. 7, the spin current resistance Rs is substantially zero, but since the current resistance Re is a finite value exceeding zero, the resistance of the sum of the spin current resistance Rs and the current resistance Re is also a finite value exceeding zero. Therefore, in the conduction path 134 of the cluster film 130, it is possible to achieve a conduction in which the resistance is suppressed to a lower value exceeding zero.

[0131] When the strength of the magnetic field applied to the particles 200 (and the minute particles 202) in the raw material is set to a value higher than the upper limit Hc2 of the preferred range, i.e., 10 3 (= 1000) Gauss, it is considered that the magnetic anisotropy of the particles 200 (and the minute particles 202) in the raw material becomes completely collapsed, and the magnetization of the particles 200 (and the minute particles 202) is saturated. This means that the magnetic moments (minute magnets) possessed by the minute particles 202 are not all aligned in the direction of the magnetic flux of the magnetic field. As a result, it is considered that the level of the magnetic anisotropy is greatly reduced compared to the case where the strength of the magnetic field is set to the strength of the lower limit Hcl of the preferred range, to a level where it can be said that the magnetic anisotropy does not exist. The case where the strength of the magnetic field is set to a value exceeding the upper limit Hc2 of the preferred range is the film (not shown) in which only the particle clusters 210 in the non-spaced state exist inside the insulating thin film.

[0132] Therefore, the strength of the virtual magnetic field generated in the particles 200 (and the minute particles 202) in the raw material is greatly reduced from the above-mentioned maximum level. As a result, it is considered that the level of the quantum effect exhibited in the particles 200 (and the minute particles 202) in the raw material is also greatly lower than the above-mentioned maximum level, to a level where it can be said that the quantum effect does not exist. In this case, as shown in FIG. 8, the spin current resistance Rs is substantially zero, but since the current resistance Re is a finite value exceeding zero, the resistance of the sum of the spin current resistance Rs and the current resistance Re is also a finite value exceeding zero. Therefore, in the conduction path 134 of the cluster film 130, it is possible to achieve a conduction in which the resistance is suppressed to a lower value exceeding zero. Figure 1As shown, the resistance further increases and the electric conduction cannot be suppressed to a low resistance.

[0133] Next, the relationship between the thickness of the insulating films 112 and 132 of the single particle film 110 and the cluster film 130 and the size (diameter) of the particles 200 will be described.

[0134] The single particle film 110 has the structure in which the particles 200 in a spaced state are dispersed and arranged to form a single layer in the in-plane direction of the insulating film 112 inside the insulating film 112. To achieve this structure, the thickness of the insulating film 112 is set to be less than twice the median particle diameter of the particles 200. Thus, the particles 200 (and the fine particles 202) in the raw material do not agglomerate in the thickness direction of the insulating film 112 during the film formation of the insulating film 112, and the spaced state is maintained, and as a result, the particles 200 (and the fine particles 202) in the raw material are reliably dispersed and arranged as a single particle layer inside the insulating film 112 as shown in (b) of FIG. 1. Figure 4

[0135] Further, as shown in (b) of FIG. 1, the direction of easy magnetization of the particles 200 (and the fine particles 202) in the raw material aligns with the direction of the magnetic flux of the magnetic field applied during the film formation, that is, aligns with the thickness direction of the insulating film 112, and the desired magnetic anisotropy is exhibited in the particles 200 (and the fine particles 202) in the raw material. Figure 1

[0136] The cluster film 130 has the structure in which the particles 200 dispersed inside the insulating film 132 agglomerate in a row in the thickness direction of the insulating film 132. To achieve this structure, the thickness of the insulating film 132 is set to be twice or more the median particle diameter of the particles 200. Thus, the particles 200 (and the fine particles 202) in the raw material contain two (or three or more) clusters of the particles 200 agglomerated in the thickness direction of the insulating film 132 during the film formation of the insulating film 132, and as with the particles 200 in a spaced state arranged inside the insulating film 112 of the single particle film 110, the particles 200 (and the fine particles 202) in the raw material are reliably dispersed and arranged as a single cluster layer inside the insulating film 132 as shown in (b) of FIG. 2. Figure 4

[0137] Further, as shown in (b) of FIG. 2, the direction of easy magnetization of the particles 200 (and the fine particles 202) in the raw material aligns with the direction of the magnetic flux of the magnetic field applied during the film formation, that is, aligns with the thickness direction of the insulating film 132, and the desired magnetic anisotropy is exhibited in the particles 200 (and the fine particles 202) in the raw material. Figure 2 ​​​As shown in (c), by applying the magnetic field during the film formation process, the magnetic moments (micro-magnets) of the particles 200 (and micro-particles 202) in the raw material are aligned in the direction of the magnetic flux of the magnetic field, that is, in the thickness direction of the insulating film 132, so that the particles 200 (and micro-particles 202) in the raw material exhibit the desired magnetic anisotropy.

[0138] Electron microscope images showing a specific example of the particles 200 actually produced by the inventors are shown below. Figure 2 (c) Figure 5 The diameter of particle 200 in (c) is 2~3μm, and it can be seen that protrusions (undulations) 204 are formed on its surface. The height difference of the protrusions (undulations) 204 is in the range of approximately 10nm~100nm.

[0139] Subsequently, in order to evaluate the performance of the conductive connector 100 according to the first embodiment of the present invention described above, reference is made to... Figure 5 The results of various performance comparison tests on the probe made using the conductive connector 100 and the probes of Comparative Examples 1 and 2 are explained.

[0140] The probe used in Comparative Example 1 in the above tests used metal terminals as conductive connectors. The metal terminals were made of tungsten or phosphor bronze with spring elasticity and formed from metal wires (bent wires) that were given curvature so that they could be easily bent.

[0141] The probe used in Comparative Example 2 in the above tests was a PCR (Positively Conductive Rubber) probe. The PCR was formed by dispersing gold- or silver-plated nickel particles in a sheet of silicone rubber. During the cross-linking and curing of the sheet, the plated nickel particles were subjected to an upper limit Hc2 exceeding the upper limit of the preferred range related to the strength of the aforementioned magnetic field, i.e., exceeding 10. 3 A strong magnetic field of (=1000) Gauss is applied, thereby condensing and magnetizing the PCR. This is to suppress the rise in resistance of the PCR.

[0142] Regarding the results of the above tests Figure 5 In Comparative Example 1, the metal probe exhibited a current resistance characteristic of the metal material used in the probe. In Comparative Example 2's PCR, the current resistance was lower than that of the metal probe in Comparative Example 1. In contrast, the conductive connector 100 of the present invention exhibits almost no current resistance, with a spin current resistance of approximately 0 mΩ. This means that the conductive connector 100 has a low resistance comparable to that of a superconductor; therefore, it is presumed that the conductive connector 100 possesses electrical conductivity utilizing the current-spin current conversion based on the aforementioned quantum effect.

[0143] Regarding contact resistance, it was not measured in Comparative Examples 1 and 2. However, in the conductive connector 100 of the present invention, a resistance of 0 mΩ means that the contact resistance is also 0 mΩ. Even when a high current was applied (continuously energized for 30 seconds), the wiring used for measurement heated up, but no heating was observed in the conductive connector 100.

[0144] Figure 5 The contact force refers to the pressure required to conduct electricity. In Comparative Example 1, it was 10 g / pin for the metal probe; in Comparative Example 2, it was 1-10 g / pin for the PCR; and in the conductive connector 100 of the present invention, it was 1-10 mg / pin. That is, it can be seen that in the conductive connector 100 of the present invention, conductivity can be obtained even when the load (contact force) applied to each pin is extremely low compared to Comparative Examples 1 and 2. This is believed to be because, in the conductive connector 100, spin current conducts through the tunnel barrier. That is, it is speculated that stable contact is achieved by effectively utilizing a stable tunnel barrier (approximately 1-20 nm thick) such as an oxide film on the surface of the contact object.

[0145] about Figure 5 The contact stability (MTBF; mean time between failures) was 10 in Comparative Example 1. 4 (10,000) times or less, in Comparative Example 2 it is 10 4~6 (10,000 to 1,000,000) times or less, while in the conductive connector 100 of the present invention it is 10. 8 (100,000,000) times or more. Furthermore, regarding the maintenance of contact stability, in Comparative Example 1, it is necessary to remove the tunneling barrier that hinders current contact through wiping (scraping the surface to remove oxide films, etc.), washing, and cleaning. In Comparative Example 2, wiping and washing are not required, but cleaning is necessary. In the conductive connector 100 of the present invention, neither wiping and washing nor cleaning is required.

[0146] about Figure 5 In Comparative Example 1, the particle size of the microparticles is approximately 80 μm due to manufacturing limitations. In Comparative Example 2, the particle size is approximately 200 μm due to the limit of particle clustering (aggregation and lateral conductivity) in PCR. In contrast, in the conductive connector 100 of the present invention, if it is a single-particle film 110, the particle size of the microparticles 200 can be miniaturized to approximately 0.1 to 10 μm.

[0147] and, Figure 5The upper limit of the number of pins that can be checked at one time is 10k (10,000) in the metal probe of Comparative Example 1 from the viewpoint of contact stability, whereas 1,000k (10,000,000) terminals can be contacted at the same time in the conductive connector 100 of the present application. It is presumed that this is because the contact force per 1 pin is greatly reduced in the conductive connector 100, thus contributing to stable maintenance of the tunneling effect through non-destructive preservation of the tunnel barrier, and the sheet layer-stacked type is configured to be able to be miniaturized. However, in the conductive connector 100, it is considered that the upper limit of the number of pins varies depending on the MTBF.

[0148] (Operations of the conductive connector 100 of the first embodiment of the present application) Next, the operations of the conductive connector 100 having the above-described structure will be described.

[0149] As described above with reference to the results of the performance comparison test Figure 9 As described above, the resistance and contact resistance of the conductive connector 100 of the first embodiment of the present application are as low as 0 mΩ. The structure and conditions for achieving this will be described below, but it is to be noted that the present inventors' inferences (including matters that are difficult to confirm) are also partially included therein.

[0150] In the conductive connector 100 having the above-described structure, the conduction portions 114 of the single particle film (first anisotropic conductive film) 110 and the conduction portions 134 of the cluster film (second anisotropic conductive film) 130 are formed of the particles 200 (and the minute particles 202 forming the particles). Therefore, the first reason why the resistance and contact resistance are reduced to approximately 0 mΩ is that, due to the magnetic anisotropy and quantum effect possessed by the particles 200 (and the minute particles 202) composed of NiO having topological antiferromagnetic properties, as shown in the right drawing of FIG. 6, each surface and interface of the particles 200 forming the conduction portions 114 and 134 is in a topological superconducting state, and spin current and electric current flow through the surfaces and interfaces, and thus each resistance of the conduction portions 114 and 134 (which is expressed as the sum of the current resistance and the spin current resistance) is zero. Figure 14

[0151] The second reason why the resistance and contact resistance are reduced to approximately 0 mΩ is that, due to the conduction portions 114 of the single particle film (first anisotropic conductive film) 110 and the conduction portions 134 of the cluster film (second anisotropic conductive film) 130 being formed of the particles 200, the magnetic anisotropy and quantum effect possessed by the particles 200 (and the minute particles 202) contribute to the reduction of the resistance and contact resistance, as described above. Figure 13 ​As shown, in each of the inside of the conduction portions 114 and 134: (a) a plurality of spin current passage candidates 606 are formed which link the south pole region 604 and the north pole region 602 at the end of the easy magnetization direction of the particle 200; (b) a tunneling magnetoresistance effect is generated in the south pole region 604 and the north pole region 602 of the particle 200; and (c) a current-spin current conversion is generated in the south pole region 604 and the north pole region 602 of the particle 200. This is because, due to these three items, as shown in Figure 14 As shown, "spin current" flows between the south pole region 604 and the north pole region 602 of the particle 200 composed of NiO as an insulator, and "current" flows in a portion outside the south pole region 604 and the north pole region 602, and in addition, mutual conversion between "current" and "spin current" is also achieved, and thus electrical conduction is achieved in each of the inside of the conduction portions 114 and 134.

[0152] As shown, in each of the inside of the conduction portions 114 and 134: (a) a plurality of spin current passage candidates 606 are formed which link the south pole region 604 and the north pole region 602 at the end of the easy magnetization direction of the particle 200; (b) a tunneling magnetoresistance effect is generated in the south pole region 604 and the north pole region 602 of the particle 200; and (c) a current-spin current conversion is generated in the south pole region 604 and the north pole region 602 of the particle 200. This is because, due to these three items, as shown in Figure 14

[0153] Here, the skyrmion refers to a topological vortex-like magnetic structure of electron spins in a solid (magnetic material). The central spin of the skyrmion is anti-parallel to the outer peripheral spin, and the spins therebetween change direction little by little while aligning in a vortex-like spiral. The diameter of the vortex is several tens to several hundreds of nm. When a skyrmion is generated, the magnetic flux density of the place where it is generated is amplified by several tens of thousands of times, and thus the strength of the magnetic field at the place where it is generated can be made very high. Therefore, it is presumed that the strength of the magnetic field of the skyrmion cluster region becomes very high, and thus the above-described quantum effect is greatly amplified. In addition, since each skyrmion is considered to be a fine magnet, a repulsive force acts between adjacent skyrmions. Therefore, as shown in Figure 12 As shown, the spin current passage candidate 606 composed of skyrmions is generated in a shape in which it is inflated into a spherical shape between the south pole region 604 and the north pole region 602.

[0154] In addition, a skyrmion is generated along the magnetic flux of an external magnetic field which intrudes into the inside of the particle 200 and is pinned to link between the south pole region 604 and the north pole region 602 of the particle 200. Furthermore, by the action of this skyrmion, a conduction path of spin current is formed along the magnetic flux which links the south pole region 604 and the north pole region 602.

[0155] By the above-described "tunneling magnetoresistance effect", as shown in Figure 13 ​The insulating film such as the oxide film of the particle 200 is not broken, and the electric conduction of the respective conduction portions 114 and 134 is achieved.

[0156] In addition, due to the above-described "electric current · spin current conversion", the "spin current" that electrically conducts between the south pole region 604 and the north pole region 602 and the "electric current" that electrically conducts in other regions are converted into each other through the spin current conduction path that connects the south pole region 604 and the north pole region 602 of the particle 200 to each other.

[0157] In this way, as shown in Figure 12 , in each of the conduction portions 114 and 134 formed of the particle 200, the resistance and the contact resistance can be suppressed to be substantially 0 mΩ, and the electric conduction is achieved.

[0158] In the conductive connector 100, as described above, on the respective surfaces and interfaces of the particles 200 that form the conduction portions 114 and 134, in addition to the generation of the topological superconducting state, the conduction portions 114 and 134 are made to have the electric conduction by (a) forming a conduction path of the spin current that connects between the south pole region 604 and the north pole region 602 located at the end portion in the easy magnetization direction of the particle 200, (b) generating the tunneling magnetoresistance effect in the south pole region 604 and the north pole region 602 of the particle 200, and (c) generating the electric current · spin current conversion in the south pole region 604 and the north pole region 602 of the particle 200, and therefore, even if the fine contact portion having a diameter of 40 μm and even if a high current of 3 A is repeatedly flown for 3 times within several tens of seconds, a change in the heat generation state does not occur. It is presumed that this is because the four matters are achieved.

[0159] In addition, as shown in Figure 15 (b) and Figure 11 , the spin current has a feature of "exclusive spin current conduction path switching" that instantaneously finds the spin current conduction path having the lowest spin current resistance from among a plurality of spin current conduction path candidates 606 present between the pair of electrodes and switches the same. According to this feature, it is presumed that in a case where the electric conduction of the conduction portions 114 and 134 is achieved by using the above-described magnetic anisotropy and quantum effect of the particle 200, there is a tendency that the resistance of each of the conduction portions 114 and 134 is suppressed to be lower.

[0160] As a spin flow path candidate 606 used in the "exclusive spin flow path switching," it can be understood as a channel for the magnetic flux of an external magnetic field existing inside the particle 200. The particle 200 is formed by the agglomeration of microparticles 202, thus having numerous interfaces (defects, surfaces) between the microparticles 202, which become spin flow path candidates. Defects (microvoids, strain (lattice defects), impurities) caused by carbonylation existing inside the microparticles 202, gaps between microparticles 202 existing inside the particle 200, and interfaces (surfaces) between particle 200 and microparticles 202 also become spin flow path candidates 606. From these multiple spin flow path candidates 606, one is selected based on the type of applied electrical signal, such as DC or high-frequency signal, to allow spin flow. Furthermore, it goes without saying that from... Figure 16 It can be seen that there are also cases where the current flows together with the spin current in the spin current path candidate 606.

[0161] Figure 16 The relationship between the dimensions (diameter) of the conductive portions 114 and 134 of the anisotropic conductive film (single particle film, cluster film) used in the conductive connector 100 of the first embodiment and the formation status of the spin flow path candidates 606 formed in the conductive portions 114 and 134 is shown.

[0162] according to Figure 9 Through the aforementioned feature of "exclusive spin current conduction path switching," the spin current flowing through the voltage-driven circuit instantly and automatically switches to a conduction path with the lowest spin current resistance (approximately 0 Ω). Therefore, based on the conductive connector 100 with this feature, it is obviously easy to further miniaturize the connector 100.

[0163] The specific dimensions of each part of the conductive connector 100 having the above structure are determined in a manner that matches the configuration of the terminals 304 on the wafer 300 and the electrodes 404 of the test head 400.

[0164] Furthermore, in the second type of superconductor, the vortex-like structure formed when a magnetic field intrudes is called a "superconducting vortex line," but it has recently been clarified that this "superconducting vortex line" coexists with the topological spin structure, or "skyrmions," that appears in magnetic materials. That is, as... Figure 14 As shown, when the interface between the surface layer and the interior of the microparticle 202 is in a topological superconducting state, skyrmions are observed in both the superconducting surface layer and the interface, i.e., both coexist. This indicates that the above description of the operation of the conductive connector 100 is scientifically valid.

[0165] In addition, such as Figure 19As shown, since the skyrmions are generated in the south pole region 604 and the north pole region 602 of the particle 200, the density of the spin current path candidate 606 is also concentrated in these two regions 604, 602. Therefore, it is presumed that the density of the spin current path candidate 606 in the south pole region 604 and the north pole region 602 is 10 6 (100,000) times the density of the spin current path candidate 606 near the center core of the particle 200. This is because it is understood that the area of the cross section near the center core of the particle 200 is 10 6 (100,000) times the area of each of the south pole region 604 and the north pole region 602. In this way, in each of the south pole region 604 and the north pole region 602, there is a considerably high density of the spin current path candidate 606, and, moreover, the protrusions (bumps and depressions) 204 that contribute to the generation of the spin current path candidate 606 exist on the surface of the substantially spherical particle 200, and therefore, it is presumed that the selection efficiency of the spin current path candidate 606 at the time of energization is improved, and the MTBF at the time of repeated contact is also maximized (MTBF≥10 8 ).

[0166] (Conductive connector 100A of the second embodiment of the present application) Figure 19 is a schematic cross-sectional view that shows the structure of the conductive connector 100A of the second embodiment of the present application.

[0167] As shown in ​ , the conductive connector 100A is configured using four sheets of the anisotropic conductive film used in the conductive connector 100 of the above-described first embodiment. That is, the single particle film 110 is disposed in the lowermost layer (first layer), the layer of the movable electrode 210 is disposed thereon as the second layer, and further, the cluster film 130 is disposed thereon as the third layer. The structure up to this point is the same as the conductive connector 100 of the above-described first embodiment.

[0168] The layer of the movable electrode 210 is disposed on the cluster film 130 as the third layer as the fourth layer, the cluster film 130 is disposed thereon as the fifth layer, the layer of the movable electrode 210 is disposed thereon as the sixth layer, and the cluster film 130 is disposed thereon as the seventh layer.

[0169] In the conductive connector 100A of the second embodiment, since four sheets of the anisotropic conductive film 110 and 130 are used in total, compared to the conductive connector 100 of the first embodiment in which two sheets of the anisotropic conductive film are used in total, it has the advantage that the displacement amount of the anisotropic conductive film of each layer can be further reduced. Thereby, the contact pressure generated between the anisotropic conductive film of each layer and the terminal 304 and the electrode 404 can be reduced, and the durability of the conductive connector 100 can be improved.

[0170] Further, a structure in which an insulating layer is provided on the surface layer of the conductive particles in the anisotropic conductive film has been proposed in the past. For example, in the above-described Patent Document 2 (Japanese Patent No. 5476221), a structure in which a nickel conductive layer is provided on the surface layer of a base material particle (resin) and a nickel oxide or nickel hydroxide film is provided on the outer surface thereof is described. In addition, in the above-described Patent Document 3 (Japanese Patent Application Publication No. 2021-064591), Patent Document 4 (Japanese Patent Application Publication No. 2022-041178), a coated particle in which a conductive particle is coated with an insulating layer is proposed.

[0171] However, in these documents, it is assumed that a high load is applied to the anisotropic conductive film to break the oxide film, thereby connecting the conductive layers to each other to make them conductive (i.e., to achieve electronic conduction). In such a conventional conduction method, stable spin current-current conversion cannot be induced. If the conductive layers are not configured to be in contact with each other at a low load, efficient spin current-current conversion and coexistence of topological superconducting states cannot be achieved as in the present application. Nevertheless, in the conventional structure, the plurality of electrodes cannot be made to conduct simultaneously without applying a high load, and thus no problem occurs in the method of breaking the oxide film.

[0172] In contrast, in the structure of the conductive connector 100 and 100A of the present application, the single particle film 110 and the cluster film 130 have flexibility in the thickness direction, and the cluster film 130 has softness in the thickness direction, and thus can absorb the fine irregularities of the terminals 304 of the wafer 300 and the electrodes 404 of the probe head 400. In addition, since the movable electrode 120 (coin flat type) does not have a support film (holding film), movement in the thickness direction of the movable electrode 120 is not hindered. Thus, contact stability at a low load is improved. Moreover, at a low load, the particles 200 having topological antiferromagnetic properties are in contact with the circuit 302 of the wafer 300 and the electrodes 404 of the probe head 400 at a very small area, and thus further miniaturization of the probe for semiconductor testing devices can be promoted.

[0173] (Variants) Finally, possible variants of the above-described first and second embodiments will be described.

[0174] In the first and second embodiments described above, the particle 200 composed of an insulating topological antiferromagnetic substance is manufactured using NiO obtained by oxidizing metallic Ni obtained by the carbonyl method, and as the NiO, it can be single-crystal NiO, or it can be a polycrystal of Ni and NiOx. In addition, manganese (Mn) can be used instead of Ni. In this case, similarly to the case of using NiO, the particle 200 can be manufactured using MnO obtained by oxidizing metallic Mn obtained by the carbonyl method. As the MnO, there are various kinds of MnO having different oxidation numbers, and any one of them can be used. As the MnO, it can be single-crystal MnO, or it can be a polycrystal of Mn and MnOx.

[0175] In addition to NiO and MnO, Cr2O3, Mn3Ge, Mn3Sn, MnS, MnTe, MnF2, FeF2, FeCl2, FeO, CoCl2, CoO, NiCl2, NiO, Cr can be used.

[0176] The preferred embodiments of the present application have been described above with reference to the accompanying drawings, but the present application is of course not limited to them. It will be apparent to those skilled in the art that various modifications or corrections can be made within the scope of the claims, and it will be understood that these modifications or corrections also belong to the technical scope of the present application. Industrial applicability

[0177] The present application can be applied to a case where a plurality of (for example, several hundreds to several tens of thousands) electrodes of an inspection object are electrically connected (for example, a wafer-probe of a semiconductor test device for wafer testing). Explanation of reference numerals

[0178] 100, 100A: electrically conductive connector; 110: single particle film; 112: insulating film; 114: conduction portion; 120: movable electrode; 130: cluster film; 132: insulating film; 134: conduction portion; 200: particle; 202: fine particle; 204: protrusion (unevenness) of the surface of the particle; 300: wafer; 302: circuit; 304: terminal; 400: test head; 404: electrode; 500: mold; 520: magnetic field generating device; 522: coil; 530, 532: roller; 540: upper support; 542: lower support; 602: north pole region of the particle; 604: south pole region of the particle; 606: spin flow passage candidate.

Claims

1. An anisotropic conductive film, characterized in that, include: Insulating films are composed of elastic insulating polymer materials; as well as Multiple roughly spherical particles, dispersed within the insulating film, are composed of a material exhibiting topological antiferromagnetic properties. The plurality of particles form a plurality of conductive portions capable of achieving electrical conduction in the thickness direction of the insulating film. These conductive portions are spaced apart within the insulating film in the in-plane direction to prevent electrical conduction in the in-plane direction of the insulating film from occurring. Each of the plurality of particles exhibits magnetic anisotropy, and its easy magnetization direction is oriented towards the thickness direction of the insulating film. Each of the plurality of particles has a south pole region and a north pole region formed at two ends along the easy magnetization direction, respectively, the magnetic flux of the virtual magnetic field is concentrated in the south pole region and the north pole region, and each of the plurality of particles has a plurality of spin flow path candidates connecting the south pole region and the north pole region. During operation, a voltage is applied between the Antarctic region and the Arctic region along the easy magnetization direction, thereby: (a) The interior of each of the plurality of said particles becomes superconducting; (b) In the region between the Antarctic region and the Arctic region, the spin flow passes through one of the plurality of spin flow path candidates; (c) Current flows from the outside to the south pole region of the particle and from the outside to the north pole region of the particle; (d) Inducing current-spin conversion in the Antarctic and Arctic regions, Thus, electrical conduction in the thickness direction of the insulating film is achieved through the conductive portion.

2. The anisotropic conductive film according to claim 1, characterized in that, Each of the plurality of conductive sections is formed by a single particle. The diameter of the particle is set to be greater than the thickness of the insulating film, such that the ends of the particle protrude from both sides of the insulating film when the insulating film is not deformed by pressure.

3. The anisotropic conductive film according to claim 1, characterized in that, Each of the plurality of conductive portions is formed by a single cluster, the single cluster being composed of a plurality of particles arranged in the thickness direction of the insulating film. The length of the cluster in the thickness direction of the insulating film is set to be greater than the thickness of the insulating film, such that the ends of the particles are exposed on both sides of the insulating film when the insulating film is not deformed by pressure.

4. The anisotropic conductive film according to claim 1, characterized in that, The insulating film is a sheet that is almost non-stretchable in its in-plane direction and flexible in its thickness direction.

5. The anisotropic conductive film according to any one of claims 1 to 4, characterized in that, The insulating topological antiferromagnetic material that forms the particles is NiO, i.e., nickel oxide, or MnO, i.e., manganese oxide.

6. The anisotropic conductive film according to claim 1, characterized in that, The particles are approximately spherical particles formed by the aggregation of tiny particles composed of substances with topological antiferromagnetic properties, with diameters ranging from approximately 0.1 μm to 10 μm. On the surface of the generally spherical particles, there are tiny protrusions formed by the tiny particles, with a height difference in the range of approximately 10 nm to 100 nm.

7. The anisotropic conductive film according to claim 1, characterized in that, The thickness of the insulating film is less than twice the median particle size.

8. The anisotropic conductive film according to claim 1, characterized in that, When forming the insulating film, the particles are given magnetic anisotropy by applying a magnetic field of strength ranging from a critical magnetic field Hc1 that penetrates into the interior of the particles from the applied magnetic field to a critical magnetic field Hc2 where the magnetization saturates in the direction of the magnetic field and the magnetization direction begins to become disordered.

9. A conductive connector for an inspection device, wherein the connector transmits and receives electrical signals between the object being inspected and an inspection device while in contact with multiple terminals of the object being inspected, characterized in that, have: The first anisotropic conductive film is formed from the anisotropic conductive film according to any one of claims 1 to 8; The second anisotropic conductive film is stacked on top of the first anisotropic conductive film and is formed by the anisotropic conductive film according to any one of claims 1 to 8. as well as Multiple movable electrodes are disposed between the first anisotropic conductive film and the second anisotropic conductive film, and are movable in the stacking direction of the second anisotropic conductive film. The plurality of movable electrodes are respectively positioned to match the positions of the plurality of terminals.

10. The conductive connector according to claim 9, characterized in that, Each of the plurality of movable electrodes is formed of a rigid material in the shape of a generally circular plate. The plurality of movable electrodes are capable of moving between the first anisotropic conductive film and the second anisotropic conductive film without using a retaining layer. When the object to be inspected is sandwiched between the inspection device and the inspection apparatus, and pressure is applied in the stacking direction, each of the plurality of movable electrodes is configured to contact and communicate with one or more of the corresponding conductive portions of the first anisotropic conductive film, and to contact and communicate with one or more of the corresponding conductive portions of the second anisotropic conductive film.

11. The conductive connector according to claim 9 or 10, characterized in that, A third anisotropic conductive film is further provided on one side of the first anisotropic conductive film of the plurality of movable electrodes, or on one side of the second anisotropic conductive film of the plurality of movable electrodes, the third anisotropic conductive film being stacked on the first anisotropic conductive film and the second anisotropic conductive film. The third anisotropic conductive film is formed from the anisotropic conductive film according to any one of claims 1 to 8.

12. A conductive structure that can be used as a conductive portion of an anisotropic conductive film, characterized in that, It contains at least one generally spherical particle formed of a substance with topological antiferromagnetic properties. The particle exhibits magnetic anisotropy and has a south pole region and a north pole region formed at both ends along its easy magnetization direction. When a voltage is applied between the Antarctic region and the Arctic region: (a) The surface and interface of the microparticles become topologically superconducting; (b) Spin flow flows in the region between the Antarctic and the Arctic regions; (c) Current flows from the outside to the south pole region of the particle and from the outside to the north pole region of the particle; (d) Inducing current-spin conversion in the Antarctic and Arctic regions, Thus, electrical conduction is achieved through the particles.

13. The conductive structure according to claim 12, characterized in that, The substance that forms the particles and has the aforementioned topological antiferromagnetic properties is NiO, i.e., nickel oxide, or MnO, i.e., manganese oxide.

14. The conductive structure according to claim 12 or 13, characterized in that, The particles are formed by condensing tiny particles of a substance possessing the aforementioned topological antiferromagnetic properties into a roughly spherical shape. The diameter of the particles is in the range of 0.1 μm to 10 μm. On the surface of the particles, there are tiny protrusions formed by the tiny particles, with a height difference in the range of approximately 10 nm to 100 nm.

15. The conductive structure according to claim 14, characterized in that, When forming an insulating film, magnetic anisotropy is imparted to the particles by applying a magnetic field of a range in intensity from a critical magnetic field Hc1 that penetrates into the interior of the particles from the direction of the applied magnetic field to a critical magnetic field Hc2 where magnetization saturates and the direction of magnetization begins to become disordered.

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