Tin antimony oxide target material and preparation method thereof

Abstract

The invention discloses a tin antimony oxide target material and a preparation method thereof, and belongs to the technical field of sputtering target materials. The tin antimony oxide target material contains tin oxide and antimony oxide in a mass ratio of 97: 3 to 99: 1; the preparation method of the tin antimony oxide target material comprises the following steps: drying mixed slurry formed by tin oxide, antimony oxide, a dispersing agent, a binder and water to obtain a dried material; the dried material is sequentially subjected to pre-pressing and cold isostatic pressing, and a green body is obtained; and the green body is subjected to glue discharging and microwave sintering in sequence, and the tin antimony oxide target material is obtained. According to the method, the tin antimony oxide target material which is high in density, low in resistivity and uniform in overall density can be obtained under the conditions of rapid sintering and no sintering aid doping.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of sputtering target material, in particular to a tin antimony oxide target material and a preparation method thereof. BACKGROUND

[0002] In recent years, due to the rapid development of the photovoltaic industry, the semiconductor industry and the flat panel display industry, sputtering target material has a broad market. Currently, the target material commonly used in the photovoltaic industry is mostly an indium oxide-based ceramic target material. However, the reserves of metallic indium are limited and difficult to regenerate. Therefore, there is an urgent need for a ceramic target material that can replace the indium oxide-based ceramic target material.

[0003] Tin oxide is a wide-bandgap metal oxide semiconductor material with a direct bandgap, which has the advantages of high melting point, low deposition temperature and low electron-induced defects. In addition, it has a wide source of raw materials, a simple preparation method and a low price. As a target material, it has been widely used in solar cells, ultraviolet detectors, surface acoustic wave devices, gas sensors, transparent electrodes and other fields.

[0004] Antimony tin oxide target material (ATO target material) produces surface diffusion effect at low temperature and is prone to volatilization during high-temperature holding. It is a relatively difficult material to densify. Without the use of sintering aids, sintering may not shrink. Therefore, it is usually necessary to add a large amount of sintering aids for long-time holding at high temperature to make it dense. However, the addition of a large amount of sintering aids will have a certain adverse effect on the electrical properties and purity of the target material.

[0005] In view of this, the present application is proposed. SUMMARY

[0006] The present application aims to provide a tin antimony oxide target material and a preparation method thereof to solve or improve the above technical problems.

[0007] The present application can be achieved as follows: In a first aspect, the present application provides a tin antimony oxide target material, which contains tin oxide and antimony oxide in a mass ratio of 97:3 to 99:1. The preparation method of the tin antimony oxide target material comprises the following steps: drying a mixed slurry formed by tin oxide, antimony oxide, a dispersing agent, a binder and water to obtain a dry material; pre-pressing and cold isostatic pressing the dry material in sequence to obtain a green body; and de-binding and microwave sintering the green body in sequence to obtain the tin antimony oxide target material.

[0008] In an optional embodiment, the tin antimony oxide target material has at least one of the following characteristics: Characteristic 1: The density of the tin antimony oxide target material is not less than 99.3%. Characteristic 2: The resistivity of the tin antimony oxide target material is not more than 300 mΩ·cm.

[0009] In a second aspect, the present application provides a method for preparing the antimony tin oxide target according to any one of the preceding embodiments, comprising the following steps: drying a mixed slurry formed by tin oxide, antimony oxide, a dispersant, a binder and water to obtain a dried material; pre-pressing and cold isostatic pressing the dried material in sequence to obtain a green body; and de-binding and microwave sintering the green body in sequence to obtain the antimony tin oxide target. In an optional embodiment, the preparation of the mixed slurry comprises: sanding the tin oxide, the antimony oxide, the dispersant and the water to obtain an intermediate slurry; and sanding the intermediate slurry after mixing with the binder to obtain the mixed slurry.

[0010] In an optional embodiment, the solid content of the mixed slurry is 40wt% to 60wt%.

[0011] In an optional embodiment, the purity of the tin oxide and the antimony oxide is ≥ 99.99%.

[0012] In an optional embodiment, the particle size D50 of the tin oxide and the antimony oxide is ≤ 5μm. 50 In an optional embodiment, the particle size D50 of the tin oxide and the antimony oxide is ≤ 5μm.

[0013] In an optional embodiment, the mass of the dispersant is 0.3% to 0.5% of the total mass of the tin oxide and the antimony oxide.

[0014] In an optional embodiment, the dispersant comprises at least one of sodium dodecyl benzene sulfonate, polyethylene glycol, polyacrylic acid and polyvinylpyrrolidone.

[0015] In an optional embodiment, the mass of the binder is 1% to 2% of the total mass of the tin oxide and the antimony oxide.

[0016] In an optional embodiment, the binder comprises polyvinyl alcohol.

[0017] In an optional embodiment, the drying method is spray drying; the inlet air temperature of the spray drying is 180°C to 250°C, and the outlet air temperature is 90°C to 120°C.

[0018] In an optional embodiment, the pre-pressing is under a pressure of 25MPa to 100MPa for 3min to 5min; and / or, the cold isostatic pressing is under a pressure of 200MPa to 300MPa for 15min to 20min.

[0019] In an optional embodiment, the de-binding is under a temperature of 600°C to 700°C for 3h to 6h.

[0020] In an optional embodiment, the de-binding has a temperature increasing rate of 0.5°C / min to 2°C / min.

[0021] In an alternative embodiment, the microwave sintering is performed at 1250-1400℃ for 6-10h.

[0022] In an alternative embodiment, the microwave sintering is performed at 1250-1400℃ for 6-10h.

[0023] The beneficial effects of the present application include: The tin antimony oxide target provided by the present application has high density and low resistivity, and the preparation method does not use any sintering aid, avoiding the adverse effects of the use of sintering aid on the electrical properties and purity of the conventional tin antimony oxide target. By combining the microwave sintering method and using microwave band coupling to generate heat from the inside of the material, the sintering density can be achieved at a lower temperature than the conventional atmospheric sintering method, greatly shortening the sintering time and reducing the energy consumption. BRIEF DESCRIPTION OF DRAWINGS

[0024] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following will briefly introduce the drawings needed to be used in the embodiments. It should be understood that the following drawings only show some embodiments of the present application, and therefore should not be regarded as a limitation on the scope. For those skilled in the art, other related drawings can also be obtained without creative labor.

[0025] Figure 1 The cross-sectional SEM image of the tin antimony oxide target prepared in Example 1 of the present application. DETAILED DESCRIPTION

[0026] In order to make the purpose, technical solutions and advantages of the embodiments of the present application more clear, the technical solutions in the embodiments of the present application will be described clearly and completely. The specific conditions not mentioned in the embodiments are carried out according to the conventional conditions or the conditions recommended by the manufacturer. The reagents or instruments not mentioned by the manufacturer are all conventional products that can be purchased in the market.

[0027] The tin antimony oxide target and the preparation method thereof provided by the present application will be described in detail below.

[0028] The present application provides a preparation method of a tin antimony oxide target, which comprises the following steps: drying a mixed slurry formed by tin oxide, antimony oxide, a dispersing agent, a binder and water to obtain dried material; sequentially pre-pressing and cold isostatic pressing the dried material to obtain a green body; sequentially degassing and microwave sintering the green body to obtain the tin antimony oxide target.

[0029] The preparation method provided by this invention does not use any sintering aids, thus avoiding the adverse effects on the electrical properties and purity of conventional antimony tin oxide targets caused by the use of sintering aids. Furthermore, by combining microwave sintering with microwave band coupling, heat is generated from within the material for heating. This allows for rapid densification at a lower temperature compared to conventional atmospheric pressure sintering (temperature approximately 1450℃~1550℃), significantly shortening sintering time and reducing energy consumption.

[0030] In some alternative embodiments, the preparation of the mixed slurry may include: milling tin oxide, antimony oxide, dispersant and water to obtain an intermediate slurry; mixing the intermediate slurry with a binder and then milling again to obtain the mixed slurry.

[0031] The mass ratio of tin oxide to antimony oxide can be from 97:3 to 99:1, such as 97:3, 97.5:2.5, 98:2, 98.5:1.5 or 99:1, or other values ​​within the range of 97:3 to 99:1.

[0032] In this invention, the mass ratio of tin oxide to antimony oxide differs from that of conventional tin oxide antimony target materials. Conventional tin oxide antimony target materials are prepared by mixing tin oxide and antimony oxide in a mass ratio of 95:5. This invention, by increasing the proportion of tin oxide and reducing the content of dopants, can effectively control the carrier concentration and improve the transmittance of subsequent coating processes.

[0033] The mass of the dispersant can be 0.3% to 0.5% of the total amount of tin oxide and antimony oxide, such as 0.3%, 0.35%, 0.4%, 0.45% or 0.5%, or other values ​​within the range of 0.3% to 0.5%.

[0034] The mass of the binder can be 1% to 2% of the total amount of tin oxide and antimony oxide, such as 1%, 1.2%, 1.5%, 1.8% or 2%, or other values ​​within the range of 1% to 2%.

[0035] The solid content of the mixed slurry can be 40wt% to 60wt%, such as 40wt%, 45wt%, 50wt%, 55wt% or 60wt%, or other values ​​within the range of 40wt% to 60wt%.

[0036] In some optional embodiments, the purity of both tin oxide and antimony oxide can be ≥99.99%. The particle size D of tin oxide and antimony oxide... 50 All are ≤5μm.

[0037] The dispersants described above may, by way of example but not by way of limitation, include at least one of sodium dodecylbenzenesulfonate, polyethylene glycol, polyacrylic acid and polyvinylpyrrolidone.

[0038] The adhesive described above may, by way of example but not by way of limitation, include polyvinyl alcohol.

[0039] In some alternative embodiments, the milling speed can be 1600 r / min to 2000 r / min, such as 1600 r / min, 1700 r / min, 1800 r / min, 1900 r / min or 2000 r / min, or other values ​​within the range of 1600 r / min to 2000 r / min.

[0040] The grinding time for tin oxide, antimony oxide, dispersant and water can be 1h to 2h, such as 1h, 1.5h or 2h, while the grinding time for intermediate slurry and binder can be 0.5h to 1h.

[0041] The diameter of the grinding balls used in the sanding process can be 0.2mm to 0.3mm.

[0042] After sand milling, the D of solids in the mixed slurry 50 ≤0.4μm. It should be noted that if the D of the solids in the mixed slurry is reduced after sand milling... 50 Particles larger than 0.4μm may have lower sintering activity, requiring longer holding time during subsequent sintering processes to achieve densification.

[0043] In some optional embodiments, spray drying can be used. The inlet air temperature for spray drying can be 180℃~250℃, such as 180℃, 190℃, 200℃, 210℃, 220℃, 230℃, 240℃, or 250℃, or other values ​​within the range of 180℃~250℃. The outlet air temperature for spray drying can be 90℃~120℃, such as 90℃, 100℃, 110℃, or 120℃, or other values ​​within the range of 90℃~120℃.

[0044] In some alternative implementations, the pre-compression can be maintained at 25MPa~100MPa (e.g., 25MPa, 50MPa, 75MPa or 100MPa) for 3min~5min (e.g., 3min, 4min or 5min).

[0045] Cold isostatic pressing can be performed under pressure of 200MPa~300MPa (e.g., 200MPa, 250MPa or 300MPa) for 15min~20min (e.g., 15min, 18min or 20min).

[0046] In some optional embodiments, glue removal can be performed by holding the glue at 600℃~700℃ (e.g., 600℃, 650℃, or 700℃) for 3h~6h (e.g., 3h, 4h, 5h, or 6h). The heating rate during glue removal can be 0.5℃ / min~2℃ / min (e.g., 0.5℃ / min, 1℃ / min, 1.5℃ / min, or 2℃ / min).

[0047] It should be noted that if the degassing temperature is too low or the holding time is too short, it will be difficult to completely remove organic matter and other substances; if the degassing temperature is too high or the holding time is too long, exceeding the actual temperature and time required for degassing, it will result in unnecessary energy consumption. In addition, if the heating rate is too fast during the degassing process, it will cause the colloid to evaporate rapidly, thereby creating a large number of difficult-to-heal pores inside the embryo.

[0048] In some alternative implementations, microwave sintering is performed by holding the sample at a temperature of 1250°C to 1400°C for 6 to 10 hours.

[0049] The microwave sintering temperature can be 1250℃, 1280℃, 1300℃, 1320℃, 1350℃, 1380℃ or 1400℃, or other values ​​within the range of 1250℃ to 1400℃.

[0050] The heating rate during microwave sintering can be 1℃ / min to 5℃ / min, such as 1℃ / min, 2℃ / min, 3℃ / min, 4℃ / min or 5℃ / min.

[0051] If the heating rate of microwave sintering is too slow, the heating time will be longer and the energy consumption will be greater; if the heating rate of microwave sintering is too fast, it may cause cracks in the target material.

[0052] It should be noted that when using atmospheric pressure sintering, in the early stages of heating, tin oxide mass migration is mainly surface diffusion. This method causes the sintering necks of powder particles to form rapidly and coarsen, which is usually not accompanied by volume shrinkage. Premature particle coarsening reduces the driving force for subsequent bulk diffusion and grain boundary diffusion, causing the material to "rigidify" before reaching a higher temperature sufficient to trigger a densification mechanism, thus preventing densification.

[0053] This invention employs microwave sintering instead of atmospheric pressure sintering, effectively improving the non-densification phenomenon caused by surface diffusion at low temperatures and volatilization at high temperatures in tin-antimony oxide targets. Even without doping with sintering aids, the density of the tin-antimony oxide target can reach 99.5% or higher. This method uses a microwave field to alter the material transport path, preferentially promoting effective densification mechanisms such as grain boundary diffusion and volume diffusion, thereby achieving target densification.

[0054] Building upon the above, the microwave sintering method employed in this invention enables rapid, low-temperature sintering of materials, significantly reducing target sintering time and gas consumption, thereby lowering energy consumption and production costs. The material absorbs microwave energy, achieving uniform heating throughout, improving its microstructure, increasing density, and promoting uniform grain growth. In other words, the target material can be fully densified in a shorter sintering time, resulting in a target material with high density, low resistivity, and uniform overall density.

[0055] Accordingly, the present invention also provides a tin-antimony oxide target material, which is prepared by the above-described preparation method.

[0056] In some optional embodiments, the density of the antimony tin oxide target provided by the present invention is not less than 99.3%, for example, it can be 99.35% to 99.85%.

[0057] In some optional embodiments, the resistivity of the antimony tin oxide target provided by the present invention does not exceed 300 mΩ·cm, for example, it can be 87 mΩ·cm to 290 mΩ·cm.

[0058] The features and performance of the present invention will be further described in detail below with reference to embodiments.

[0059] Example 1 This embodiment provides a tin oxide antimony target material (such as...) Figure 1 As shown), its preparation method includes: S1: Tin oxide, antimony oxide, dispersant and water are milled to obtain an intermediate slurry; the intermediate slurry is mixed with the binder and then milled again to obtain a mixed slurry.

[0060] The mass ratio of tin oxide to antimony oxide was 97:3, and the purity of both tin oxide and antimony oxide was 99.99%; the particle size D of tin oxide and antimony oxide was... 50 The thickness is 3 μm. The dispersant (composed of polyvinylpyrrolidone and polyethylene glycol in a mass ratio of 20%:80%) is 0.5% of the total mass of tin oxide and antimony oxide. The binder (polyvinyl alcohol) is 2% of the total mass of tin oxide and antimony oxide; the solid content of the mixed slurry is 50 wt%.

[0061] The milling speed was 1800 r / min. The milling time for tin oxide, antimony oxide, dispersant, and water was 2 hours, and the milling time for the intermediate slurry and binder was 0.5 hours. The diameter of the grinding balls used in the milling process was 0.3 mm. After milling, the D of the solids in the mixed slurry was... 50 It is 0.21 μm.

[0062] S2: Spray dry the mixed slurry and then sieve it to obtain the dried material.

[0063] The inlet air temperature for spray drying is 220℃, and the outlet air temperature is 100℃.

[0064] S3: The dried material is pre-pressed and then cold isostatically pressed to obtain a green body.

[0065] Pre-pressing involves holding the pressure at 50 MPa for 3 minutes. Cold isostatic pressing involves holding the pressure at 270 MPa for 20 minutes.

[0066] S4: The green blank is sequentially debonded and microwave sintered, and then cooled in the furnace to obtain tin-antimony oxide target material.

[0067] The debinding process involves heating to 600℃ at a rate of 1℃ / min and holding at that temperature for 6 hours. The microwave sintering process involves heating to 1400℃ at a rate of 5℃ / min and holding at that temperature for 8 hours.

[0068] Example 2 This embodiment provides a tin-antimony oxide target material, the preparation method of which includes: S1: Tin oxide, antimony oxide, dispersant and water are milled to obtain an intermediate slurry; the intermediate slurry is mixed with the binder and then milled again to obtain a mixed slurry.

[0069] The mass ratio of tin oxide to antimony oxide was 98:2, and the purity of both tin oxide and antimony oxide was 99.99%; the particle size D of tin oxide and antimony oxide was... 50 The thickness is 3 μm. The dispersant (sodium dodecylbenzenesulfonate) accounts for 0.3% of the total mass of tin oxide and antimony oxide. The binder (polyvinyl alcohol) accounts for 1% of the total mass of tin oxide and antimony oxide; the solid content of the mixed slurry is 40 wt%.

[0070] The milling speed was 1600 r / min. The milling time for tin oxide, antimony oxide, dispersant, and water was 2 hours, and the milling time for the intermediate slurry and binder was 1 hour. The diameter of the grinding balls used in the milling process was 0.3 mm. After milling, the D of the solids in the mixed slurry was... 50 It is 0.36μm.

[0071] S2: Spray dry the mixed slurry and then sieve it to obtain the dried material.

[0072] The inlet air temperature for spray drying is 180℃, and the outlet air temperature is 90℃.

[0073] S3: The dried material is pre-pressed and then cold isostatically pressed to obtain a green body.

[0074] Pre-pressing involves holding the pressure at 25 MPa for 3 minutes. Cold isostatic pressing involves holding the pressure at 200 MPa for 20 minutes.

[0075] S4: The green blank is sequentially debonded and microwave sintered, and then cooled in the furnace to obtain tin-antimony oxide target material.

[0076] The debinding process involves heating to 600℃ at a rate of 0.5℃ / min and holding at that temperature for 6 hours. The microwave sintering process involves heating to 1250℃ at a rate of 1℃ / min and holding at that temperature for 10 hours.

[0077] Example 3 This embodiment provides a tin-antimony oxide target material, the preparation method of which includes: S1: Tin oxide, antimony oxide, dispersant and water are milled to obtain an intermediate slurry; the intermediate slurry is mixed with the binder and then milled again to obtain a mixed slurry.

[0078] The mass ratio of tin oxide to antimony oxide is 99:1, and the purity of both tin oxide and antimony oxide is 99.99%. The particle size D of tin oxide and antimony oxide is... 50 The thickness is 3 μm. The dispersant (polyacrylic acid) accounts for 0.4% of the total mass of tin oxide and antimony oxide. The binder (polyvinyl alcohol) accounts for 1.5% of the total mass of tin oxide and antimony oxide; the solid content of the mixed slurry is 60 wt%.

[0079] The milling speed was 2000 r / min. The milling time for tin oxide, antimony oxide, dispersant, and water was 1 hour, and the milling time for the intermediate slurry and binder was 0.5 hours. The diameter of the grinding balls used in the milling process was 0.3 mm. After milling, the D of the solids in the mixed slurry was... 50 It is 0.21 μm.

[0080] S2: Spray dry the mixed slurry and then sieve it to obtain the dried material.

[0081] The inlet air temperature for spray drying is 250℃, and the outlet air temperature is 120℃.

[0082] S3: The dried material is pre-pressed and then cold isostatically pressed to obtain a green body.

[0083] Pre-pressing involves holding the pressure at 100 MPa for 5 minutes. Cold isostatic pressing involves holding the pressure at 300 MPa for 5 minutes.

[0084] S4: The green blank is sequentially debonded and microwave sintered, and then cooled in the furnace to obtain tin-antimony oxide target material.

[0085] The debinding process involves heating to 700℃ at a rate of 2℃ / min and holding at that temperature for 3 hours. The microwave sintering process involves heating to 1400℃ at a rate of 5℃ / min and holding at that temperature for 6 hours.

[0086] Comparative Example 1 The difference between this comparative example and Example 1 is that in S4, microwave sintering is replaced with atmospheric pressure sintering, the sintering temperature is 1450℃, and the heating rate and holding time during the sintering process remain unchanged.

[0087] Comparative Example 2 The difference between this comparative example and Example 1 is that in S4, microwave sintering is replaced with atmospheric pressure sintering, the sintering temperature is 1550℃, and the heating rate and holding time during the sintering process remain unchanged.

[0088] Comparative Example 3 The difference between this comparative example and Example 2 is that in S4, microwave sintering is replaced with atmospheric pressure sintering, the sintering temperature is 1400℃, and the heating rate and holding time during the sintering process remain unchanged.

[0089] Comparative Example 4 The difference between this comparative example and Example 2 is that in S4, microwave sintering is replaced with atmospheric pressure sintering, the sintering temperature is 1400℃, the holding time is 10h, and the heating rate during the sintering process remains unchanged.

[0090] Comparative Example 5 The difference between this comparative example and Example 1 is that in S1, the mass ratio of tin oxide to antimony oxide is 95:5.

[0091] Comparative Example 6 The difference between this comparative example and Example 1 is that in S4, the glue removal rate is 10℃ / min.

[0092] Test case The performance of the antimony tin oxide targets prepared in Examples 1-3 and Comparative Examples 1-6 was compared, and the results are shown in Table 1.

[0093] The relative density was tested in accordance with GB / T1423-1996, and the resistivity was tested in accordance with GB / T1551-2021.

[0094] Table 1 Test Results

[0095] As can be seen from Table 1, the tin oxide antimony target prepared in the embodiments of the present invention has both high relative density and low resistivity.

[0096] As can be seen from the comparison between Comparative Examples 1-3 and Example 1, when the sintering method is changed to atmospheric pressure sintering, even under high temperature sintering conditions of 1400℃~1550℃, the resistivity of the prepared tin oxide antimony target material is significantly higher than that of Example 1, and the relative density is also significantly lower.

[0097] As can be seen from the comparison between Comparative Example 4 and Example 1, when the sintering method is changed to atmospheric pressure sintering, even if the holding time is extended at the same temperature, it is difficult to obtain tin-antimony oxide target material with both high relative density and low resistivity.

[0098] As can be seen from the comparison between Comparative Example 5 and Example 1, it is difficult to obtain a tin-antimony oxide target material with both high relative density and low resistivity when the mass ratio of tin oxide to antimony oxide is not set properly.

[0099] As can be seen from the comparison between Comparative Example 6 and Example 1, an excessively fast desizing rate will reduce the relative density of the antimony tin oxide target and increase its resistivity.

[0100] In summary, the preparation method provided by this invention does not use any sintering aids, thus avoiding the adverse effects on the electrical properties and purity of conventional antimony tin oxide targets caused by the use of sintering aids. Furthermore, by combining microwave sintering with microwave coupling to generate heat from within the material, densification can be achieved rapidly at a lower temperature compared to conventional atmospheric pressure sintering, significantly shortening sintering time and reducing energy consumption.

[0101] The above description is merely a preferred embodiment of the present invention and is not intended to limit the invention. Various modifications and variations can be made to the present invention by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.

Claims

1. A tin-antimony oxide target material, characterized in that, The tin oxide antimony target contains tin oxide and antimony oxide in a mass ratio of 97:3 to 99:1; The preparation method of the tin oxide antimony target material includes the following steps: drying a mixed slurry formed by tin oxide, antimony oxide, dispersant, binder and water to obtain a dried material; pre-pressing and cold isostatic pressing of the dried material to obtain a green blank; and debinding and microwave sintering of the green blank to obtain the tin oxide antimony target material.

2. The tin-antimony oxide target material according to claim 1, characterized in that, The antimony tin oxide target material has at least one of the following characteristics: Feature 1: The density of the tin-antimony oxide target material is not less than 99.3%; Feature 2: The resistivity of the tin oxide antimony target does not exceed 300 mΩ·cm.

3. A method for preparing the tin-antimony oxide target material as described in claim 1 or 2, characterized in that, include: A mixed slurry formed by tin oxide, antimony oxide, dispersant, binder and water is dried to obtain a dried material; The dried material is subjected to pre-pressing and cold isostatic pressing in sequence to obtain a green blank; the green blank is then subjected to debinding and microwave sintering in sequence to obtain the tin-antimony oxide target material.

4. The preparation method according to claim 3, characterized in that, The preparation of the mixed slurry includes: milling the tin oxide, the antimony oxide, the dispersant, and water to obtain an intermediate slurry; mixing the intermediate slurry with the binder and then milling again to obtain the mixed slurry; Preferably, the solid content of the mixed slurry is 40wt%~60wt%.

5. The preparation method according to claim 3, characterized in that, The purity of both the tin oxide and the antimony oxide is ≥99.99%; And / or, the particle size D of the tin oxide and the antimony oxide 50 All are ≤5μm.

6. The preparation method according to claim 3, characterized in that, The mass of the dispersant is 0.3% to 0.5% of the total amount of tin oxide and antimony oxide; Preferably, the dispersant comprises at least one of sodium dodecylbenzenesulfonate, polyethylene glycol, polyacrylic acid, and polyvinylpyrrolidone.

7. The preparation method according to claim 3, characterized in that, The mass of the binder is 1% to 2% of the total amount of the tin oxide and the antimony oxide; Preferably, the adhesive comprises polyvinyl alcohol.

8. The preparation method according to any one of claims 3 to 7, characterized in that, The drying method is spray drying; the inlet air temperature for spray drying is 180℃~250℃, and the outlet air temperature is 90℃~120℃.

9. The preparation method according to any one of claims 3 to 7, characterized in that, Pre-compression involves holding the pressure at 25MPa~100MPa for 3min~5min; And / or, cold isostatic pressing is performed under pressure of 200MPa~300MPa for 15min~20min.

10. The preparation method according to any one of claims 3 to 7, characterized in that, The glue removal process involves maintaining the temperature at 600℃~700℃ for 3h~6h. And / or, microwave sintering is performed by holding at 1250℃~1400℃ for 6h~10h; Preferably, the heating rate for glue removal is 0.5℃ / min to 2℃ / min; Preferably, the heating rate of microwave sintering is 1℃ / min to 5℃ / min.

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