Semiconductor growth equipment equipped with a rotating device

Abstract

This invention relates to a semiconductor growth apparatus equipped with a rotation device, comprising: a substrate carrier with a groove structure in the center of its bottom surface; a rotating shaft; a rotation drive device disposed on the rotating shaft to drive the rotating shaft to rotate; the top of the rotating shaft includes a rotating shaft protrusion and a rotating shaft extension surrounding the bottom of the rotating shaft protrusion; the rotating shaft protrusion is adapted to the groove structure to drive the substrate carrier to rotate under the drive of the rotation drive device; the rotating shaft extension is located below the bottom surface of the substrate carrier and extends radially along the substrate carrier; a shaft heating device disposed within the rotating shaft, including a shaft heating element, the shaft heating element being located within the structure surrounded by the surface of the rotating shaft protrusion and the surface of the rotating shaft extension; and an external power supply device electrically connected to the shaft heating device through the rotating shaft to supply power to the shaft heating element. This invention can improve the surface temperature uniformity of the substrate carrier.

Description

Technical Field

[0001] This invention relates to the field of semiconductor equipment technology, and more particularly to a semiconductor growth apparatus equipped with a rotation device. Background Technology

[0002] In semiconductor manufacturing processes, for example, a semiconductor material layer is grown on the substrate surface using a metal-organic chemical vapor deposition (MOCVD) device. The heating device is located below the base, and the substrate temperature is controlled by heating the base and transferring heat from the base to the substrate it supports.

[0003] In existing technologies, such as Figure 7 As shown, heating device A supplies heat to base B. The rotating shaft C of the rotating device is rotatably connected to base B and absorbs heat from base B. This causes the actual temperature distribution D on the surface of base B to decrease in the central region compared to the ideal temperature distribution E. Furthermore, to ensure the lifespan of shaft C, a corresponding cooling device is usually installed for it, which further exacerbates the heat absorption from base B, resulting in uneven temperature distribution on the base B surface. This is especially pronounced for large bases, where the temperature drop in the central area is particularly significant and covers a large range. Even with adjustments to the heating device, the need to maintain a certain process temperature range limits the extent to which the temperature drop in the central area can be improved.

[0004] Therefore, it is necessary to provide a new semiconductor growth apparatus equipped with a rotation device to solve the aforementioned problems existing in the prior art. Summary of the Invention

[0005] The technical problem to be solved by this application is how to provide a semiconductor growth apparatus equipped with a rotation device that can improve the surface temperature uniformity of the substrate carrier, especially suitable for applications with large-size substrate carriers.

[0006] To address the aforementioned technical problems, according to embodiments of this application, a semiconductor growth apparatus equipped with a rotation device is provided, comprising:

[0007] The substrate carrier has a groove structure in the middle of its bottom surface;

[0008] Shaft;

[0009] A rotary drive device is provided on the rotating shaft to drive the rotating shaft to rotate;

[0010] The top of the rotating shaft includes a rotating shaft protrusion and a rotating shaft extension surrounding the bottom of the rotating shaft protrusion;

[0011] The protruding section of the rotating shaft is adapted to the groove structure so as to drive the substrate carrier to rotate under the drive of the rotary drive device;

[0012] The extended section of the rotating shaft is located below the bottom surface of the substrate carrier and extends radially along the substrate carrier;

[0013] A shaft heating device is disposed inside the rotating shaft and includes a shaft heating element, wherein the shaft heating element is located within the structure enclosed by the surface of the protruding section of the rotating shaft and the surface of the extended section of the rotating shaft.

[0014] An external power supply device is electrically connected to the shaft heating device through the rotating shaft to supply power to the shaft heating element.

[0015] By adopting the above technical solution, the rotating shaft and the groove structure are adapted to each other, enabling the rotating shaft to drive the substrate carrier to rotate. A shaft heating device is set within the structure enclosed by the surface of the protruding section and the extended section of the rotating shaft. At the same time, an external power supply device supplies power to the shaft heating device, so that the shaft heating element in the shaft heating device can heat the middle part of the substrate carrier. Compared with the method of not setting a shaft heating device in the rotating shaft, by setting a shaft heating device in the rotating shaft that can heat the middle part of the substrate carrier, the temperature of the middle part of the substrate carrier is made uniform with the temperature of other parts outside the middle part. This allows the middle part of the substrate carrier to support the substrate, expands the placement area of ​​the substrate carrier, and thus increases the production capacity.

[0016] According to an embodiment of this application, at least a portion of the surface of the rotating shaft protrusion is in contact with the inner wall of the groove structure;

[0017] At least a portion of the top surface of the extended shaft is in contact with a portion of the bottom surface of the substrate carrier, or there is a gap between the extended shaft and the substrate carrier.

[0018] According to an embodiment of this application, there is a gap between the top surface of the rotating shaft protrusion and the bottom wall of the groove structure, a gap between the rotating shaft extension and the substrate carrier, and a portion of the sidewall of the rotating shaft protrusion is attached to a portion of the sidewall of the groove structure.

[0019] According to an embodiment of this application, the rotating shaft includes an outer rotating shaft and an inner rotating shaft that are nested together and have a gap between them;

[0020] The top of the external pivot includes a pivot protrusion and a pivot extension;

[0021] The shaft heating element is located on the exposed surface at the top of the internal rotating shaft;

[0022] The rotary drive device is connected to the external rotating shaft to drive the substrate carrier to rotate. The internal rotating shaft extends and is disposed within the rotary drive device so that it remains stationary during the movement of the external rotating shaft. The external power supply device is electrically connected to the shaft heating device through the internal rotating shaft.

[0023] According to an embodiment of this application, the groove structure, the external rotating shaft, and the internal rotating shaft are all axisymmetric structures, and their respective central axes coincide with the central axis of the substrate carrier.

[0024] According to an embodiment of this application, it further includes a process chamber, and the rotary drive device includes a fixed base plate and a rotary sealing assembly dynamically sealed on the top of the fixed base plate;

[0025] The rotary sealing assembly is connected to the external rotating shaft and is dynamically sealed within the process chamber;

[0026] The internal rotating shaft extends into the rotary sealing assembly and is fixedly mounted on the fixed base plate.

[0027] According to an embodiment of this application, the shaft heating device further includes a conductor whose two ends are electrically connected to the shaft heating element and the external power supply device, respectively, and the internal rotating shaft is an insulated rotating shaft, with the conductor disposed on the internal rotating shaft.

[0028] According to an embodiment of this application, the shaft heating device further includes an insulating structure and a conductor whose two ends are electrically connected to the shaft heating element and the external power supply device, respectively. The internal rotating shaft is a conductive rotating shaft, and the conductor is disposed on the internal rotating shaft. The shaft heating element and the conductor are electrically insulated from the internal rotating shaft through the insulating structure.

[0029] According to an embodiment of this application, the top of the internal rotating shaft includes:

[0030] The inner rotating shaft protrusion is provided correspondingly to the rotating shaft protrusion section and is spaced apart from each other;

[0031] The inner rotating shaft extension portion is provided correspondingly to the rotating shaft extension section and is spaced apart from each other;

[0032] The shaft heating element is disposed on the surface of the inner rotating shaft protrusion, or on the surface of the inner rotating shaft protrusion and the top surface of the inner rotating shaft extension, with the top surface of the inner rotating shaft extension facing the bottom surface of the substrate carrier.

[0033] According to an embodiment of this application, the inner rotating shaft protrusion has the same outline shape as the rotating shaft protrusion segment, and the inner rotating shaft extension has the same outline shape as the rotating shaft extension segment.

[0034] According to an embodiment of this application, the shaft heating element is further disposed on the side wall of the inner rotating shaft extension portion and / or the bottom surface of the inner rotating shaft extension portion.

[0035] According to an embodiment of this application, the inner rotating shaft protrusion is frustoconical, with its outer side wall inclined to the central axis of the substrate carrier and expanding in a direction away from the top surface of the substrate carrier.

[0036] According to an embodiment of this application, the arrangement density of the shaft heating elements disposed on the top surface of the inner rotating shaft protrusion is: The arrangement density of the shaft heating elements located on the side wall of the inner rotating shaft protrusion is as follows: The arrangement density of the shaft heating elements on the top surface of the extended portion of the inner rotating shaft is set to... ,in, = = ,or > > .

[0037] According to an embodiment of this application, the groove structure is frustoconical, with its inner sidewall inclined to the central axis of the substrate carrier and expanding in a direction away from the top surface of the substrate carrier. The distance between the shaft heating element disposed on the top surface of the inner rotating shaft protrusion and the bottom wall of the groove structure is... The distance between the shaft heating element located on the side wall of the inner rotating shaft protrusion and the inner side wall of the groove structure is... The distance between the shaft heating element located on the top surface of the extended inner shaft and the bottom surface of the substrate carrier is... ,in, = = .

[0038] According to an embodiment of this application, a base heating device is further provided below the bottom surface of the substrate carrier and surrounding the extended section of the rotating shaft. The base heating device includes an inner ring base heating element close to the extended section of the rotating shaft. The distance between the inner ring base heating element and the bottom surface of the substrate carrier is not less than the distance between the shaft heating element provided on the top surface of the inner rotating shaft extension and the bottom surface of the substrate carrier. Attached Figure Description

[0039] Figure 1 This is a schematic diagram of the cooperation method between an external rotating shaft and a groove structure according to an embodiment of the present invention.

[0040] Figure 2 This is a schematic diagram of another way in which the rotating shaft and the groove structure are fitted together according to an embodiment of the present invention.

[0041] Figure 3This is a schematic diagram of another way in which the rotating shaft and the groove structure are fitted together according to an embodiment of the present invention.

[0042] Figure 4 This is a schematic diagram of another way in which the rotating shaft and the groove structure are fitted together according to an embodiment of the present invention.

[0043] Figure 5 This is a schematic diagram of a shaft heating element and the distribution of conductors within the internal rotating shaft, according to an embodiment of the present invention.

[0044] Figure 6 This is a schematic diagram showing the installation position of a rotary drive device according to an embodiment of the present invention.

[0045] Figure 7 This is a top view of the top of a rotating shaft according to an embodiment of the present invention.

[0046] Figure 8 This is a schematic diagram of the cooperation between a substrate carrier and a rotating shaft in a prior art as mentioned in an embodiment of the present invention; wherein A is a heating device; B is a base; C is a rotating shaft; D is the actual temperature distribution on the surface of the base; and E is the ideal temperature distribution on the surface of the base.

[0047] Figure label:

[0048] 100. Substrate carrier; 101. Groove structure; 200. Rotary drive device; 210. Fixed base plate; 220. Rotary sealing assembly; 221. Rotary sleeve; 222. Drive mechanism; 223. Sealing sleeve; 300. External rotating shaft; 310. Rotary shaft protrusion section; 311. Top wall of protrusion section; 312. Side wall of protrusion section; 320. Rotary shaft extension section; 400. Internal rotating shaft; 410. Protrusion part of internal rotating shaft; 420. Extension part of internal rotating shaft; 500. Shaft heating device; 510. Shaft heating element; 520. Conductor; 600. Base heating device; 700. Rotary shaft; 800. Bottom wall of process chamber. Detailed Implementation

[0049] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention. Unless otherwise defined, the technical or scientific terms used herein should have the ordinary meaning understood by those skilled in the art. The terms "comprising" and similar expressions used herein mean that the element or object preceding the word covers the element or object listed after the word and its equivalents, but does not exclude other elements or objects.

[0050] The following is combined with Figures 1-8 The specific embodiments of the present invention will be further described in detail below.

[0051] Embodiments of the present invention provide a semiconductor growth apparatus equipped with a rotating device. The semiconductor apparatus includes, but is not limited to, a chemical vapor deposition (CVD) apparatus, and may also be a physical vapor deposition (PVD) apparatus. The chemical vapor deposition apparatus may be a plasma-enhanced chemical vapor deposition (PECVD) apparatus, a metal-organic chemical vapor deposition (MOCVD) apparatus, etc. This embodiment uses an MOCVD apparatus as an example for illustration. It should be understood that this apparatus is merely exemplary, and the present invention is not limited to this type of apparatus.

[0052] The semiconductor growth apparatus of this embodiment includes a substrate carrier 100 with a groove structure 101 on its bottom surface; a rotary drive device 200 is rotatably mounted on a rotating shaft 700 to drive the rotating shaft to rotate; the top of the rotating shaft 700 includes a rotating shaft protrusion 310 and a rotating shaft extension 320 surrounding the bottom of the rotating shaft protrusion 310; the rotating shaft protrusion 310 is adapted to the groove structure 101 to drive the substrate carrier 100 to rotate under the drive of the rotary drive device 200; the rotating shaft extension 320 is located below the bottom surface of the substrate carrier 100 and extends radially along the substrate carrier 100; a shaft heating device 500 is disposed inside the rotating shaft and includes a shaft heating element 510, which is located within the structure surrounded by the surface of the rotating shaft protrusion 310 and the surface of the rotating shaft extension 320; and an external power supply device is electrically connected to the shaft heating device 500 through the rotating shaft to supply power to the shaft heating element 510.

[0053] In some embodiments, reference is made to Figure 1 and Figure 6 The substrate carrier 100 is used to support the substrate, and the groove structure 101 is set in the middle of the bottom surface of the substrate carrier 100. The rotating shaft 700 is connected to the substrate carrier 100, and the rotation drive device 200 can drive the rotating shaft 700 to rotate, thereby driving the substrate carrier 100 to rotate; that is, the rotation drive device 200 is started, and the substrate carrier 100 is driven to rotate through the rotating shaft 700.

[0054] In some embodiments, the shaft extension 320 is disposed around the bottom of the shaft protrusion 310, and the shaft extension 320 is connected to the shaft protrusion 310. The connection method can be bonding, welding, or integral molding, etc. In this embodiment, no limitation is made, with the primary focus on the synchronous movement of the shaft extension 320 and the shaft protrusion 310. In some specific embodiments, such as... Figure 1 and Figure 7 As shown, the extended section 320 of the rotating shaft is arranged in a ring around the protruding section 310 of the rotating shaft.

[0055] In order for the rotating shaft 700 to drive the substrate carrier 100 to rotate, a rotating shaft protrusion 310 is adapted to the groove structure 101, so that when the rotary drive device 200 drives the rotating shaft 700 to rotate, it can drive the substrate carrier 100 to rotate. After the rotating shaft protrusion 310 is adapted to the groove structure 101, the rotating shaft extension 320 provided around the bottom of the rotating shaft protrusion 310 is located below the bottom surface of the substrate carrier 100, and extends from the inside to the outside along the radial direction of the substrate carrier 100, covering at least a portion of the bottom of the middle part of the substrate carrier 100.

[0056] In the prior art, referring to Figure 8 The heat absorption effect of the rotating shaft C on the bearing surface (i.e., the surface used to support the substrate) of the base B (substrate carrier 100) will also affect the distribution of heat in the surrounding area, especially when the radial dimension of the base B is larger and / or the axial dimension is thicker. Figure 8 The greater the downward indentation in the center of the actual temperature distribution diagram D shown, the more pronounced the indentation becomes. In this case, even if the heating power of heating device A is increased, the improvement in the temperature drop in the center of the bearing surface of base B is limited due to the lag in heat conduction and the influence of the environment where base B is located (such as the influence of process gas flow field on temperature disturbance). At the same time, it also raises the temperature of the surrounding surfaces, which is not conducive to maintaining the normal process temperature range of the bearing surface.

[0057] To address the aforementioned issues, on one hand, this embodiment of the application provides a shaft heating device 500 within the rotating shaft 700 to independently provide heat to the center of the corresponding substrate carrier 100 bearing surface. On the other hand, by extending the rotating shaft extension 320 at the top of the external rotating shaft 300 radially along the substrate carrier 100, the rotating shaft extension 320 can compensate for heat to the corresponding area on the substrate carrier 100 after being heated. This helps to minimize the temperature difference between the center and the edge of the bearing surface, improve temperature uniformity, and does not negatively affect the maintenance of the normal process temperature range of the bearing surface.

[0058] Reference Figure 1 and Figure 5A shaft heating device 500 is provided inside the rotating shaft 700. The shaft heating device 500 includes a shaft heating element 510. The shaft heating element 510 is located within the structure enclosed by the surface of the rotating shaft protrusion 310 and the surface of the rotating shaft extension 320. It is used to heat the substrate carrier 100. That is, the shaft heating element 510 located on the surface of the rotating shaft protrusion 310 can heat the part of the substrate carrier 100 corresponding to the rotating shaft protrusion 310, and the shaft heating element 510 located within the structure enclosed by the surface of the rotating shaft extension 320 can heat the part of the substrate carrier 100 corresponding to the surface of the rotating shaft extension 320.

[0059] In some embodiments, the shaft heating element 510 is a resistance wire, coiled on the protruding section 310 and the extended section 320 of the shaft. The selection of the resistance wire and the winding density can be flexibly adjusted according to the heating requirements. The specific arrangement method is a conventional technique in the art.

[0060] The semiconductor growth equipment also includes an external power supply device, which is electrically connected to the shaft heating device 500 via the rotating shaft 700, thereby supplying power to the shaft heating element 510 so that the shaft heating element 510 can heat the corresponding substrate carrier 100 region.

[0061] Reference Figure 1 , Figure 2 , Figure 3 and Figure 4 At least a portion of the surface of the rotating shaft protrusion 310 is abutted against the inner wall of the groove structure 101 so that the rotating shaft 700 drives the substrate carrier 100 to rotate under the drive of the rotation drive device 200. In some specific embodiments, this abutment refers to a tight fit.

[0062] In some embodiments, at least a portion of the sidewall of the rotating shaft protrusion 310 is abutted against at least a portion of the sidewall of the groove structure 101, and the top surface of the rotating shaft protrusion 310, i.e., the top wall 311 of the protrusion, is abutted against the bottom wall of the groove structure 101 so that the rotating shaft 700 drives the substrate carrier 100 to rotate under the drive of the rotary drive device 200. The abutment between the sidewalls of the rotating shaft protrusion 310 and the groove structure 101 achieves radial positioning and can effectively transmit torque through mutual friction, ensuring rotational stability. The abutment between the top wall 311 of the protrusion of the rotating shaft protrusion 310 and the bottom wall of the groove structure 101 enables the rotating shaft protrusion 310 to support the substrate carrier 100. This concave-convex fit is suitable for applications with relatively low rotational speeds and / or heavy loads on the substrate carrier 100.

[0063] Considering the need for better rotational stability for high-speed rotation control, and the fact that both the substrate carrier 100 and the rotating shaft 700 will undergo thermal expansion at high temperatures, in some embodiments, at least a portion of the sidewall of the rotating shaft protrusion 310 is in contact with at least a portion of the sidewall of the groove structure 101, and the top wall 311 of the protrusion is spaced from the bottom wall of the groove structure 101, thereby reserving space for thermal expansion and avoiding damage to the substrate carrier 100 and / or the rotating shaft 700 due to thermal expansion at high temperatures. Furthermore, there is a gap between the rotating shaft extension 320 and the substrate carrier 100.

[0064] Furthermore, the partial sidewall of the rotating shaft protrusion 310, which is part of the sidewall of the groove structure 101, namely the partial sidewall of the protrusion 312, not only provides space for thermal expansion but also ensures convenient assembly and disassembly between the substrate carrier 100 and the rotating shaft 700. In some embodiments, the rotating shaft 700 includes an outer rotating shaft 300 and an inner rotating shaft 400 that are nested together and spaced apart; wherein the outer rotating shaft 300 is nested within the inner rotating shaft 400, so that the inner rotating shaft 400 is placed inside the outer rotating shaft 300, and there is a gap between the inner wall of the outer rotating shaft 300 and the outer wall of the inner rotating shaft 400, so that the rotation of the outer rotating shaft 300 is not interfered with by the inner rotating shaft 400.

[0065] In some embodiments, the top of the outer rotating shaft 300 includes a rotating shaft protrusion 310 and a rotating shaft extension 320, that is, the rotating shaft protrusion 310 and the rotating shaft extension 320 are both part of the top of the outer rotating shaft 300, so as to cooperate with the groove structure 101 to make the substrate carrier 100 move under the drive of the rotary drive device 200.

[0066] In some embodiments, the shaft heating element 510 is disposed on the exposed surface of the top of the inner rotating shaft 400; specifically, there is a gap between the top surface of the inner rotating shaft 400 and the inner wall of the top of the outer rotating shaft 300. The shaft heating element 510 is disposed on the exposed surface of the top of the inner rotating shaft 400 to heat the substrate carrier 100, wherein the outer rotating shaft 300 is adapted to the groove structure 101 to rotate the substrate carrier 100 under the drive of the rotary drive device 200, and the inner rotating shaft 400 is used to mount the shaft heating element 510.

[0067] In some embodiments, there is a gap between the surface of the shaft heating element 510 located on top of the inner rotating shaft 400 and the outer rotating shaft 300 to prevent the shaft heating element 510 from being squeezed and deformed, thus affecting the heating zone control effect. The heating control of the inner rotating shaft 400 and the rotation control of the outer rotating shaft 300 are independent of each other, which can avoid the problem of the wires connecting the shaft heating element 510 getting tangled due to the rotation of the shaft heating element 510 with the substrate carrier 100.

[0068] Since the selection, height, and arrangement (e.g., coil density distribution) of the axial heating element 510 at the top of the inner rotating shaft 400 are related to the contour shape of its surface and the distance between its surface and the groove structure 101, and the heat transfer from the outer rotating shaft 300 to the corresponding area of ​​the substrate carrier 100 is also related to its contour shape, the inner rotating shaft protrusion 410 and the rotating shaft protrusion section 310 are set to have the same contour shape, and the inner rotating shaft extension 420 and the rotating shaft extension section 320 are set to have the same contour shape, thereby improving the universality of the rotating shaft 700. For different substrate carriers 100 with the same groove structure 101, if the heating requirements are different, it is only necessary to consider changing the arrangement of the axial heating element 510 on its surface.

[0069] In some embodiments, the inner rotating shaft protrusion 410 is frustoconical, with its outer side wall inclined to the central axis of the substrate carrier 100 and expanding in a direction away from the top surface of the substrate carrier 100. That is, the shape of the inner rotating shaft protrusion 410 is the same as the shape of the rotating shaft protrusion segment 310, both being frustoconical, and the outer side wall of the inner rotating shaft protrusion 410 is inclined to the central axis of the substrate carrier 100 and expands in a direction away from the top surface of the substrate carrier 100.

[0070] In some specific embodiments, the frustum shape is a truncated cone shape.

[0071] In some embodiments, to prevent the inner rotating shaft 400 from interfering with the rotation of the outer rotating shaft 300, a rotary drive device 200 is provided to connect to the outer rotating shaft 300 to drive the substrate carrier 100 to rotate. The inner rotating shaft 400 extends and is disposed within the rotary drive device 200 so that it remains stationary during the movement of the outer rotating shaft 300. This allows the outer rotating shaft 300 to move independently relative to the inner rotating shaft 400 without interference from it, thereby avoiding the problem of wire winding of the connecting wires of the shaft heating element 510 caused by the rotation of the shaft heating element 510 with the substrate carrier 100. An external power supply device is electrically connected to the shaft heating device 500 through the inner rotating shaft 400. Specifically, the external power supply device is connected to the shaft heating device 500 through wires to supply power to the shaft heating element 510, as described in detail later.

[0072] In some embodiments, the top of the inner rotating shaft 400 includes an inner rotating shaft protrusion 410 and an inner rotating shaft extension 420. The inner rotating shaft extension 420 is disposed around the bottom of the inner rotating shaft protrusion 410. Its arrangement can be by bonding, welding, or integral molding, etc., without limitation, as long as there is no relative movement between the inner rotating shaft protrusion 410 and the inner rotating shaft extension 420. The inner rotating shaft protrusion 410 is correspondingly disposed to the rotating shaft protrusion 310 and has a gap between them, so that the inner rotating shaft protrusion 410 will not interfere with the rotating shaft protrusion 310 during the rotation of the outer rotating shaft 300; the inner rotating shaft extension 420 is correspondingly disposed to the rotating shaft extension 320 and has a gap between them, so that the inner rotating shaft extension 420 will not interfere with the rotating shaft extension 320 during the rotation of the outer rotating shaft 300.

[0073] In some embodiments, the shaft heating element 510 is disposed on the surface of the inner rotating shaft protrusion 410, or on the surface of the inner rotating shaft protrusion 410 and the top surface of the inner rotating shaft extension 420, with the top surface of the inner rotating shaft extension 420 facing the bottom surface of the substrate carrier 100.

[0074] In some embodiments, depending on the heating process requirements and the configuration of the base heating device 600, the shaft heating element 510 may be provided only on the surface of the inner rotating shaft protrusion 410, that is, the shaft heating element 510 may be provided on the top wall and side wall of the inner rotating shaft protrusion 410.

[0075] In some specific embodiments, the shaft heating element 510 is disposed on the surface of the inner rotating shaft protrusion 410, the top surface of the inner rotating shaft extension 420, and the sidewall of the inner rotating shaft extension 420.

[0076] In some specific embodiments, the shaft heating element 510 is disposed on the surface of the inner shaft protrusion 410, the top surface of the inner shaft extension 420, and the bottom surface of the inner shaft extension 420 to further enhance the heat compensation capability.

[0077] In some specific embodiments, the shaft heating element 510 is disposed on the surface of the inner rotating shaft protrusion 410, the top surface of the inner rotating shaft extension 420, the side wall of the inner rotating shaft extension 420, and the bottom surface of the inner rotating shaft extension 420 to further enhance the heat compensation capability.

[0078] In applications where heating is provided solely by the base heating device 600 and the temperature drop in the middle of the top surface of the substrate carrier 100 is low, in some embodiments, the arrangement density of the shaft heating elements 510 located on the top surface of the inner rotating shaft protrusion 410 is as follows: The arrangement density of the shaft heating elements 510 located on the side wall of the inner rotating shaft protrusion 410 is as follows: The arrangement density of the shaft heating elements 510 located on the top surface of the inner rotating shaft extension 420 is as follows: ,in, = = By reasonably adjusting the heating power of the heating elements 510 in each zone and the heating power of the base heating device 600, the top surface of the substrate carrier 100 can achieve temperature uniformity that meets the process temperature range, simplifying the adjustment of temperature control.

[0079] In applications where heating is provided solely by the base heating device 600, and the temperature drop in the middle of the top surface of the substrate carrier 100 is significant, in some embodiments, when... > > At this time, the shaft heating element 510 located on the top surface of the inner rotating shaft protrusion 410 has the highest arrangement density. Since this area is closer to the center of the top surface of the substrate carrier 100, the temperature drop is the greatest. Therefore, the high-density arrangement of shaft heating elements 510 can quickly transfer a large amount of heat to the temperature drop area corresponding to the top surface of the substrate carrier 100, thereby rapidly raising the temperature in that area. The temperature drop on the sidewall of the inner rotating shaft protrusion 410 and the top surface of the inner rotating shaft extension 420 corresponds to the next lower temperature drop, and the arrangement density of shaft heating elements 510 in these areas also decreases accordingly. This avoids abrupt temperature changes between the top surface of the inner rotating shaft protrusion 410 and the top surface of the inner rotating shaft extension 420, making the temperature distribution of the entire base smoother.

[0080] In some embodiments, the groove structure 101 is frustoconical, with its inner sidewall inclined to the central axis of the substrate carrier 100 and expanding in a direction away from the top surface of the substrate carrier 100. Further, the distance between the shaft heating element 510 located on the top surface of the inner rotating shaft protrusion 410 and the bottom wall of the groove structure 101 is... The distance between the shaft heating element 510 located on the side wall of the inner rotating shaft protrusion 410 and the inner side wall of the groove structure 101 is... The distance between the shaft heating element 510 located on the top surface of the inner rotating shaft extension 420 and the bottom surface of the substrate carrier 100 is... ,in, = = To ensure that the distance between each shaft heating element 510 and the heated surface of the substrate carrier 100 is equal, it is beneficial to improve the universality of the rotating shaft 700.

[0081] In some embodiments, the groove structure 101, the outer rotating shaft 300, and the inner rotating shaft 400 are all axisymmetric structures, with their respective central axes coinciding with the central axis of the substrate carrier 100. Specifically, the groove structure 101, the outer rotating shaft 300, and the inner rotating shaft 400 are all axisymmetric structures, and the central axes of the groove structure 101, the inner rotating shaft 400, and the outer rotating shaft 300 coincide with each other; that is, the groove structure 101, the inner rotating shaft 400, and the outer rotating shaft 300 are coaxially arranged to enhance the stability of the rotating shaft driving the substrate carrier 100 to rotate, and at the same time to improve the temperature uniformity of the heating element 510 at the top of the inner rotating shaft 400 on the substrate carrier 100.

[0082] In some embodiments, the semiconductor growth apparatus further includes a process chamber, and the rotary drive device 200 includes a fixed base plate 210 and a rotary sealing assembly 220 dynamically sealed on the top of the fixed base plate 210; the rotary sealing assembly 220 is connected to an external rotating shaft 300 and dynamically sealed in the process chamber; the internal rotating shaft 400 extends into the rotary sealing assembly 220 and is fixedly disposed on the fixed base plate 210.

[0083] In some specific embodiments, the substrate carrier 100, the rotating shaft protrusion 310, and the rotating shaft extension 320 are all located inside the process chamber; the rotary drive device 200 includes a fixed base plate 210 and a rotary sealing assembly 220 dynamically sealed on the top of the fixed base plate 210; wherein, the rotary sealing assembly 220 is also dynamically sealed on the bottom wall 800 of the process chamber, and the rotary sealing assembly 220 is connected to the external rotating shaft 300. The rotary sealing assembly 220 can drive the external rotating shaft 300 to rotate, and while the rotary sealing assembly 220 drives the external rotating shaft 300 to rotate, the fixed base plate 210 and the process chamber remain stationary; that is, the rotary sealing assembly 220 can drive the external rotating shaft 300 to rotate relative to the process chamber and the fixed base plate 210. Specifically, the rotary sealing assembly 220 includes a cylindrical drive cylinder and a drive motor for rotating the drive cylinder. The drive motor drives the drive cylinder to rotate the external rotating shaft 300 relative to the process chamber and the fixed base plate 210. The transmission method between the drive motor and the drive cylinder is well known to those skilled in the art and will not be described in detail here. More specifically, the internal rotating shaft 400 extends into the drive cylinder and is fixedly mounted on the fixed base plate 210, with a gap between the internal rotating shaft 400 and the inner wall of the drive cylinder. The fixing method between the internal rotating shaft 400 and the fixed base plate 210 can be adhesive, snap-fit, or bolted, etc., without limitation, with the main consideration being that the internal rotating shaft 400 will not rotate on the fixed base plate 210, thereby preventing the internal rotating shaft 400 from interfering with the rotation of the external rotating shaft 300.

[0084] In some embodiments, reference is made to Figure 6The rotary sealing assembly 220 includes a rotary sleeve 221, a drive mechanism 222, and a sealing sleeve 223. The rotary sleeve 221 is hollow, with one end connected to an external rotating shaft 300 to drive the external rotating shaft 300 to rotate. The drive mechanism 222 is connected to the side wall of the rotary sleeve 221 to provide driving force. An internal rotating shaft 400 passes through the rotary sleeve 221 and connects to a fixed base plate 210. The sealing sleeve 223 is located on the bottom wall 800 of the process chamber, and is fitted onto the rotary sleeve 221 in a dynamic sealing manner to strengthen the dynamic sealing relationship between the rotary sleeve 221 and the bottom wall 800 of the process chamber.

[0085] In some embodiments, the shaft heating device 500 further includes a conductor 520 electrically connecting the shaft heating element 510 and an external power supply device at both ends. The internal rotating shaft 400 is an insulated rotating shaft, and the conductor 520 is disposed on the internal rotating shaft 400. The conductor 520 can be a wire or other conductive structure; no specific limitation is made here. Its primary purpose is to electrically connect the shaft heating element 510 and the external power supply device, allowing the external power supply device to supply power to the shaft heating element 510 through the conductor 520. Simultaneously, to facilitate the external power supply device's power supply to the shaft heating element 510, the internal rotating shaft 400 is set to be an insulated rotating shaft, such as an internal rotating shaft 400 made of ceramic or other insulating materials. No limitation is made here, as long as it does not affect the external power supply device's power supply to the shaft heating element 510. More specifically, the conductor 520 is disposed in the inner rotating shaft 400, which can be disposed inside the inner rotating shaft 400 or on the surface of the inner rotating shaft 400. It is worth noting that when the conductor 520 is disposed on the surface of the inner rotating shaft 400, it is necessary to maintain an appropriate distance between the conductor 520 and the inner wall of the outer rotating shaft 300 so that the outer rotating shaft 300 does not interfere with the power supply of the external power supply device to the shaft heating element 510; or an insulating structure is provided between the conductor 520 and the inner wall of the outer rotating shaft 300 so that the outer rotating shaft 300 does not interfere with the power supply of the external power supply device to the shaft heating element 510.

[0086] In some embodiments, the shaft heating device 500 further includes an insulating structure and conductors 520 electrically connected at both ends to the shaft heating element 510 and the external power supply device. The inner shaft 400 is a conductive shaft, and the conductors 520 are disposed within the inner shaft 400. The shaft heating element 510 and the conductors 520 are electrically insulated from the inner shaft 400 by the insulating structure. Specifically, in addition to the case where the inner shaft 400 is an insulated shaft as described above, the inner shaft 400 can also be a conductive shaft, such as an inner shaft 400 made of molybdenum or other conductive materials. When the inner shaft 400 is a conductive shaft, the shaft heating device 500 further includes an insulating structure and conductors 520 electrically connected at both ends to the shaft heating element 510 and the external power supply device. The shaft heating element 510 and the conductors 520 are electrically insulated from the inner shaft 400 by the insulating structure. Furthermore, the conductors 520 can be disposed inside the inner shaft 400 or on the surface of the outer shaft 300. More specifically, when the conductor 520 is disposed inside the inner rotating shaft 400, the insulating structure can be an insulating tube, which covers the conductor 520, preventing contact between the conductor 520 and the inner rotating shaft 400, thus ensuring that the inner rotating shaft 400 does not interfere with the power supply of the external power supply device to the shaft heating element 510; when the conductor 520 is disposed on the surface of the inner rotating shaft 400, the insulating structure can be an insulating tube or an insulating block; when the insulating structure is an insulating tube, it covers the conductor 520, preventing contact between the conductor 520 and the inner rotating shaft 400. There will be no contact, so that the internal rotating shaft 400 will not interfere with the power supply of the external power supply device to the shaft heating element 510; when the insulation structure is an insulating block (e.g., a ceramic bracket), the insulating block is placed between the internal rotating shaft 400 and the conductor 520 so that the two will not come into contact. At the same time, it is necessary to ensure that there is an appropriate gap between the conductor 520 and the inner wall of the external rotating shaft 300, or an insulating block is also placed between the conductor 520 and the inner wall of the external rotating shaft 300 so that the external rotating shaft 300 will not interfere with the power supply of the external power supply device to the shaft heating element 510.

[0087] In some embodiments, the semiconductor growth apparatus further includes a base heating device 600 disposed below the bottom surface of the substrate carrier 100 and surrounding the shaft extension 320. The base heating device 600 and the shaft heating device 500 cooperate to heat the substrate carrier 100. Specifically, the base heating device 600 includes an inner ring base heating element close to the shaft extension 320. The distance between the inner ring base heating element and the bottom surface of the substrate carrier 100 is not less than the distance between the shaft heating element 510 disposed on the top surface of the inner shaft extension 420 and the bottom surface of the substrate carrier 100. This allows the shaft heating element 510 disposed on the top surface of the inner shaft extension 420 to play a better heat-gathering role. Moreover, since the shaft heating element 510 on the top surface of the inner shaft extension 420 is embedded in the shaft extension 320, the heat capacity of this part is large, which is also conducive to heat gathering. Specifically, by setting up a shaft heating device 500, the temperature of the area corresponding to the junction of the rotating shaft 700 and the substrate carrier 100 is highly uniform with other areas, thereby enabling the middle part of the substrate carrier 100 to support the substrate and thus expand production capacity.

[0088] While embodiments of the present invention have been described in detail above, it will be apparent to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations fall within the scope and spirit of the invention as set forth in the claims. Furthermore, the invention described herein may have other embodiments and can be implemented or carried out in various ways.

Claims

1. A semiconductor growth apparatus equipped with a rotation device, characterized in that, include: The substrate carrier has a groove structure in the middle of its bottom surface; A rotating shaft includes an outer rotating shaft and an inner rotating shaft that are nested together and spaced apart from each other; A rotary drive device is disposed on the rotating shaft to drive the rotating shaft to rotate; the rotary drive device is connected to the external rotating shaft to drive the substrate carrier to rotate; the internal rotating shaft extends and is disposed within the rotary drive device so as to remain stationary during the movement of the external rotating shaft; The top of the external rotating shaft includes a rotating shaft protrusion and a rotating shaft extension surrounding the bottom of the rotating shaft protrusion; The top of the inner rotating shaft includes an inner rotating shaft protrusion and an inner rotating shaft extension. The inner rotating shaft protrusion is correspondingly arranged with respect to the rotating shaft protrusion and there is a gap between them. The inner rotating shaft extension is correspondingly arranged with respect to the rotating shaft extension and there is a gap between them. The protruding section of the rotating shaft is adapted to the groove structure so as to drive the substrate carrier to rotate under the drive of the rotary drive device; The extended section of the rotating shaft is located below the bottom surface of the substrate carrier and extends radially along the substrate carrier; A shaft heating device is disposed inside the rotating shaft, including a shaft heating element located within the structure enclosed by the surface of the protruding section of the rotating shaft and the surface of the extended section of the rotating shaft; the shaft heating element is disposed on the surface of the protruding portion of the inner rotating shaft and the top surface of the extended portion of the inner rotating shaft, with the top surface of the extended portion of the inner rotating shaft facing the bottom surface of the substrate carrier; An external power supply device is electrically connected to the shaft heating device via the rotating shaft to supply power to the shaft heating element; the external power supply device is electrically connected to the shaft heating device via the internal rotating shaft. A base heating device is disposed below the bottom surface of the substrate carrier and surrounds the extended section of the rotating shaft. The base heating device includes an inner ring base heating element close to the extended section of the rotating shaft.

2. The semiconductor growth apparatus according to claim 1, characterized in that, At least a portion of the surface of the rotating shaft protrusion is in contact with the inner wall of the groove structure; At least a portion of the top surface of the extended shaft is in contact with a portion of the bottom surface of the substrate carrier, or there is a gap between the extended shaft and the substrate carrier.

3. The semiconductor growth apparatus according to claim 2, characterized in that, There is a gap between the top surface of the rotating shaft protrusion and the bottom wall of the groove structure, and there is a gap between the extended section of the rotating shaft and the substrate carrier. Part of the sidewall of the rotating shaft protrusion is attached to part of the sidewall of the groove structure.

4. The semiconductor growth apparatus according to claim 1, characterized in that, The groove structure, the external rotating shaft, and the internal rotating shaft are all axisymmetric structures, and their respective central axes coincide with the central axis of the substrate carrier.

5. The semiconductor growth apparatus according to claim 1, characterized in that, It also includes a process chamber, and the rotary drive device includes a fixed base plate and a rotary sealing assembly with a dynamic seal disposed on the top of the fixed base plate; The rotary sealing assembly is connected to the external rotating shaft and is dynamically sealed within the process chamber; The internal rotating shaft extends into the rotary sealing assembly and is fixedly mounted on the fixed base plate.

6. The semiconductor growth apparatus according to claim 1, characterized in that, The shaft heating device also includes a conductor whose two ends are electrically connected to the shaft heating element and the external power supply device, respectively. The internal rotating shaft is an insulated rotating shaft, and the conductor is located on the internal rotating shaft.

7. The semiconductor growth apparatus according to claim 1, characterized in that, The shaft heating device further includes an insulating structure and a conductor whose two ends are electrically connected to the shaft heating element and the external power supply device, respectively. The internal rotating shaft is a conductive rotating shaft, and the conductor is disposed on the internal rotating shaft. The shaft heating element and the conductor are electrically insulated from the internal rotating shaft through the insulating structure.

8. The semiconductor growth apparatus according to claim 1, characterized in that, The inner rotating shaft protrusion has the same outline shape as the rotating shaft protrusion section, and the inner rotating shaft extension has the same outline shape as the rotating shaft extension section.

9. The semiconductor growth apparatus according to claim 1, characterized in that, The shaft heating element is also disposed on the side wall of the inner rotating shaft extension and / or the bottom surface of the inner rotating shaft extension.

10. The semiconductor growth apparatus according to claim 1, characterized in that, The inner rotating shaft protrusion is frustoconical, with its outer wall inclined to the central axis of the substrate carrier and expanding in a direction away from the top surface of the substrate carrier.

11. The semiconductor growth apparatus according to claim 10, characterized in that, The arrangement density of the shaft heating elements on the top surface of the inner rotating shaft protrusion is set as follows: The arrangement density of the shaft heating elements located on the side wall of the inner rotating shaft protrusion is as follows: The arrangement density of the shaft heating elements on the top surface of the extended portion of the inner rotating shaft is set to... ,in, = = ,or > > .

12. The semiconductor growth apparatus according to claim 10, characterized in that, The groove structure is frustoconical, with its inner wall inclined to the central axis of the substrate carrier and expanding in a direction away from the top surface of the substrate carrier. The distance between the shaft heating element located on the top surface of the inner rotating shaft protrusion and the bottom wall of the groove structure is... The distance between the shaft heating element located on the side wall of the inner rotating shaft protrusion and the inner side wall of the groove structure is... The distance between the shaft heating element located on the top surface of the extended inner shaft and the bottom surface of the substrate carrier is... ,in, = = .

13. The semiconductor growth apparatus according to claim 1, characterized in that, The distance between the inner ring base heating element and the bottom surface of the substrate carrier is not less than the distance between the shaft heating element provided on the top surface of the inner rotating shaft extension and the bottom surface of the substrate carrier.

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