Perovskite film transfer printing method
By depositing gradient stress metal oxide films on the surface of perovskite thin films and applying external force for peeling, combined with hot pressing, a dry non-destructive transfer of perovskite thin films was achieved, solving the problem of damage to perovskite thin films caused by traditional transfer methods and improving device performance.
Patent Information
- Application Number
- CN202511698592.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-11-19
- Publication Date
- 2026-02-06
AI Technical Summary
Traditional wet transfer printing techniques may dissolve perovskite materials, while dry transfer printing techniques such as laser stripping may damage perovskite films and affect device performance.
A metal oxide film layer with gradient stress is deposited on the surface of a perovskite film layer using atomic layer deposition (ALD). The perovskite film is then peeled off from the substrate and transferred to the target substrate by applying external force, and non-destructive transfer is achieved by combining hot pressing.
Dry, non-destructive transfer of perovskite thin films was achieved, improving device performance and avoiding damage caused by traditional transfer methods. Alumina films passivated surface defects, further enhancing device performance.
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Figure CN121487482A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of perovskite device fabrication technology, and in particular to a method for transferring perovskite thin films. Background Technology
[0002] Perovskite solar cells (PSCs), as an emerging photovoltaic technology, have developed rapidly over the past decade, with laboratory efficiencies exceeding 27%, roughly on par with silicon-based solar cells, demonstrating enormous potential for commercial applications. Simultaneously, perovskite light-emitting diodes (PeLEDs) have also made significant progress, with external quantum efficiencies exceeding 20% for red, green, and blue light. Perovskite optoelectronic devices are on the verge of industrial application; therefore, realizing miniaturized device arrays through transfer printing technology is essential.
[0003] Traditional wet transfer printing techniques may dissolve perovskite materials, and unavoidable liquid fluctuations during the transfer process can cause cracks in the perovskite film, affecting the performance of subsequently fabricated devices. Other dry transfer printing techniques, such as laser ablation, also damage the perovskite film due to the high temperature and energy of the laser. Therefore, there is an urgent need to develop a new dry transfer printing technique to achieve non-destructive transfer of perovskite films. Summary of the Invention
[0004] To solve the above problems, the present invention provides a method for transferring perovskite thin films.
[0005] The present invention aims to provide a method for transferring perovskite thin films, which specifically includes the following steps: S1. Prepare a perovskite thin film layer on a silicon wafer substrate; S2. On the surface of the perovskite thin film layer, a first metal oxide thin film layer with a medium tensile stress of 100~500MPa is deposited by atomic layer deposition process. S3. On the surface of the first metal oxide thin film layer, a second metal oxide thin film layer is deposited using an atomic layer deposition process. The tensile stress of the second metal oxide thin film layer is higher than that of the first metal oxide thin film layer. The second metal oxide thin film layer and the first metal oxide thin film layer together constitute a gradient stress thin film structure. S4. An adhesive transfer carrier is attached to the surface of the second metal oxide thin film layer, and an external force is applied to cause the silicon substrate to bend and deform. When the strain energy release rate exceeds the interfacial adhesion force between the perovskite thin film layer and the silicon substrate, the perovskite thin film layer is peeled off from the silicon substrate. S5. Transfer the perovskite thin film layer to the target substrate, perform hot pressing on the stacked structure of the perovskite thin film layer and the target substrate to remove the adhesive transfer carrier and release the residual stress in the gradient stress thin film structure.
[0006] Preferably, the method for preparing the perovskite thin film layer in step S1 is selected from at least one of spin coating, inkjet printing, blade coating, vapor deposition, screen printing, and vapor deposition. The crystal structure of the perovskite thin film is selected from at least one of three-dimensional crystal structure, two-dimensional crystal structure, two-dimensional / three-dimensional hybrid crystal structure, and perovskite quantum dot structure.
[0007] Preferably, before preparing the perovskite thin film layer, a silicon wafer substrate cleaning step is also included: the silicon wafer substrate is ultrasonically cleaned in acetone, ethanol, and deionized water for 10-20 minutes each, dried with nitrogen, dried in an oven at 90-100°C for 1.5-2.5 hours, cooled to room temperature, and then placed in a plasma-ozone generator for 10-20 minutes.
[0008] Preferably, the operation of the atomic layer deposition process in step S2 includes: evacuating the reaction chamber of the atomic layer deposition equipment to a preset vacuum level, setting a preset reaction temperature, and introducing an inert gas at a preset flow rate as a carrier gas and a cleaning gas; then, using a metal source precursor and a first oxygen source precursor as raw materials, alternately pulse-introducing the metal source precursor and the first oxygen source precursor into the reaction chamber, and purging with inert gas for a preset time after each pulse; The operation of the atomic layer deposition process in step S3 includes: maintaining the preset vacuum level, preset reaction temperature and inert gas flow rate of the reaction chamber of the atomic layer deposition equipment; using metal source precursor and second oxygen source precursor as raw materials, the second oxygen source precursor is oxygen plasma, and alternately pulse the metal source precursor and the second oxygen source precursor into the reaction chamber, and after each pulse, inert gas is purged for a preset time. In steps S2 and S3, the thickness of the first metal oxide thin film layer and the second metal oxide thin film layer is controlled by adjusting the number of cycles; the tensile stress of the first metal oxide thin film layer and the second metal oxide thin film layer is adjusted by adjusting the pulse time, holding time and purging time.
[0009] Preferably, in steps S2 and S3, the materials of the first metal oxide thin film layer and the second metal oxide thin film layer are selected from at least one of aluminum oxide, titanium dioxide, zinc oxide and tin oxide prepared based on atomic layer deposition; The preset vacuum degree is 0.2~0.3 Torr, and the preset reaction temperature is 40~60℃; The pulse time of the metal source precursor is 0.01~10 seconds, the hold time after the pulse is 1~60 seconds, and the inert gas purging time is 10~200 seconds; the pulse time of the first oxygen source precursor and the second oxygen source precursor is 0.01~10 seconds, the hold time after the pulse is 1~60 seconds, and the inert gas purging time is 110~200 seconds.
[0010] Preferably, the inert gas is high-purity argon, and the preset flow rate is 100~200 cm⁻¹. 3 / min; The first oxygen source precursor is deionized water; The oxygen plasma is generated through inductive coupling excited by a radio frequency coil; The preset vacuum level is 0.25 Torr.
[0011] Preferably, the metal source precursor is trimethylaluminum, and the trimethylaluminum is kept at room temperature during atomic layer deposition; the materials of the first metal oxide thin film layer and the second metal oxide thin film layer are aluminum oxide.
[0012] Preferably, the hot pressing operation in step S5 is performed at a temperature of 30~150℃ and a pressure of 0~50 MPa.
[0013] Preferably, step S1 uses a spin-coating method to prepare the perovskite thin film layer. The specific operations include: preparing a perovskite precursor solution, coating it onto a silicon wafer substrate, spin-coating at a rotation speed of 3000-9000 rpm and an acceleration of 1500-4500 rpm for 30-90 seconds, and then annealing it on a hot plate at 100°C for 15 minutes to obtain the perovskite thin film layer. Preferably, the adhesive transfer carrier is a thermal release adhesive tape; the target substrate is selected from at least one of a flexible polymer substrate, ITO conductive glass, and metal foil.
[0014] Compared with the prior art, the present invention can achieve the following beneficial effects: (1) Dry transfer printing of perovskite films was achieved, avoiding the damage to perovskite films caused by traditional wet transfer printing. (2) Alumina films passivate perovskite film surface defects, which is beneficial to improving the performance of subsequent device fabrication.
[0015] In summary, due to the ionic crystal nature of perovskite materials, conventional wet transfer techniques can damage the prepared perovskite films. This invention proposes a gradient stress-based perovskite film transfer method based on atomic layer deposition, enabling dry transfer of perovskite films. Furthermore, the perovskite film surface contains numerous dangling bonds and defects that act as non-radiative recombination centers, affecting device performance. The alumina film deposited on the perovskite film surface passivates these defects, thereby improving the performance of subsequently fabricated devices. Attached Figure Description
[0016] Figure 1 This is a flowchart of a perovskite thin film transfer method according to an embodiment of the present invention.
[0017] Figure 2 This is a schematic diagram of the gradient stress principle of a perovskite thin film transfer method according to an embodiment of the present invention; in the figure, (a) represents the deposition of a first alumina thin film layer and a second alumina thin film layer with gradient stress on the perovskite thin film layer; (b) when an external tensile stress is applied and the strain energy release rate exceeds the interfacial adhesion force between the perovskite thin film layer and the silicon substrate, the perovskite thin film layer is peeled off from the silicon substrate.
[0018] Figure 3 The results are efficiency test results of the perovskite solar cell provided according to embodiments of the present invention.
[0019] Figure label: 1. Silicon wafer substrate; 2. Perovskite thin film layer; 3. First alumina thin film layer; 4. Second alumina thin film layer. Detailed Implementation
[0020] In the following description, embodiments of the invention will be described with reference to the accompanying drawings. In the description below, the same modules are denoted by the same reference numerals. Where the same reference numerals are used, their names and functions are also the same. Therefore, their detailed description will not be repeated.
[0021] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and do not constitute a limitation thereof.
[0022] See Figure 1 This invention provides a perovskite thin film transfer method based on a gradient stress strategy using atomic layer deposition. The mechanism of this strategy is as follows: during the atomic layer deposition of inorganic oxide thin films, residual stress is inevitably introduced, and this residual stress can be controlled by adjusting process parameters. This introduces gradient stress into the deposited film; subsequently, an external force is applied to the substrate, causing deformation and introducing additional tensile stress. When the strain energy release rate exceeds the interfacial adhesion between the perovskite thin film and the substrate, the perovskite thin film can be peeled off from the substrate. Specifically, the method includes the following steps: S1. Prepare a perovskite thin film layer on a silicon wafer substrate; Preferably, the preparation is carried out by methods such as spin coating, inkjet printing, doctor blade coating, vapor deposition (thermal vapor deposition, electron beam vapor deposition, etc.), screen printing, and vapor deposition (such as chemical vapor deposition, CVD). When using spin coating, inkjet printing, or blade coating, a perovskite precursor solution is prepared, and the perovskite thin film layer is prepared from the perovskite precursor solution using the corresponding method. In evaporation methods (thermal evaporation, electron beam evaporation, etc.), screen printing methods, and vapor deposition methods (such as chemical vapor deposition, CVD), perovskite-containing raw materials (such as slurry, solid precursor) are used to prepare perovskite thin film layers using the corresponding methods. Preferably, the crystal structure of the perovskite thin film layer is selected from at least one of three-dimensional crystal structure, two-dimensional crystal structure, two-dimensional / three-dimensional mixed crystal structure and perovskite quantum dot structure; Preferably, when preparing a perovskite thin film layer using spin coating, the specific operation includes: preparing a perovskite precursor solution, coating it onto a silicon wafer substrate, spin coating it at a rotation speed of 3000~9000 rpm and an acceleration of 1500~4500 rpm for 30~90 seconds, and then annealing it on a hot plate at 100°C for 15 minutes to obtain a perovskite thin film layer; Preferably, before preparing the perovskite thin film layer, a silicon wafer substrate cleaning step is also included: the silicon wafer substrate is ultrasonically cleaned in acetone, ethanol, and deionized water for 10-20 minutes each, dried with nitrogen, and then dried in an oven at 90-100°C for 1.5-2.5 hours. After cooling to room temperature, it is placed in a plasma-ozone generator for 10-20 minutes. In a specific embodiment, the substrate is ultrasonically cleaned for 15 minutes, dried with nitrogen, and then dried in an oven at 100°C for 2 hours. After cooling to room temperature, it is placed in a plasma-ozone generator for 15 minutes. In a specific embodiment, the preparation process of the perovskite precursor solution includes: weighing 190.8 mg of methylamine iodide and 553.2 mg of lead iodide, dissolving them in a mixed solvent of 700 μL of γ-butyrolactone and 300 μL of dimethyl sulfoxide, stirring on a magnetic stirrer at 70°C for more than 2 hours, and filtering through a 0.22 μm organic filter to obtain the perovskite precursor solution.
[0023] S2. A first metal oxide thin film layer is deposited on the surface of the perovskite thin film layer using an atomic layer deposition process. The first metal oxide thin film layer has a medium tensile stress. The operation of the atomic layer deposition process includes: evacuating the reaction chamber of the atomic layer deposition equipment to a preset vacuum level, setting a preset reaction temperature, and introducing an inert gas at a preset flow rate as a carrier gas and purging gas; then, using a metal source precursor and a first oxygen source precursor as raw materials, alternately pulse-feeding the metal source precursor and the first oxygen source precursor into the reaction chamber, and purging with inert gas for a preset time after each pulse; controlling the thickness of the first metal oxide thin film by adjusting the number of cycles; and adjusting the tensile stress of the first metal oxide thin film to a moderate level by adjusting the pulse time, holding time, and purging time. Preferably, the first oxygen source precursor is deionized water; the metal source precursor is trimethylaluminum, and the trimethylaluminum is kept at room temperature during atomic layer deposition. Preferably, in the gradient stress thin film structure, the tensile stress of the first metal oxide thin film layer is 100~500MPa.
[0024] S3. On the surface of the first metal oxide thin film layer, a second metal oxide thin film layer is deposited using an atomic layer deposition process. The second metal oxide thin film layer has high tensile stress, and the second metal oxide thin film layer and the first metal oxide thin film layer together form a gradient stress thin film structure. The operation of the atomic layer deposition process includes: maintaining the preset vacuum level, preset reaction temperature, and inert gas flow rate in the reaction chamber of the atomic layer deposition equipment; using a metal source precursor and a second oxygen source precursor as raw materials, the second oxygen source precursor being oxygen plasma (generated by inductive coupling through an RF coil), alternately pulse-feeding the metal source precursor and the second oxygen source precursor into the reaction chamber, and purging with inert gas for a preset time after each pulse; controlling the thickness of the second metal oxide thin film by adjusting the number of cycles; and regulating the tensile stress of the second metal oxide thin film to a high level by adjusting the pulse time, holding time, purging time, and RF power. Preferably, in steps S2 and S3: the first metal oxide and the second metal oxide are selected from at least one of aluminum oxide, titanium dioxide, zinc oxide and tin oxide prepared based on atomic layer deposition; The preset vacuum level is 0.2~0.3 Torr, and the preset reaction temperature is 40~60℃; the inert gas is high-purity argon, and the preset flow rate of high-purity argon is 100~200 cm. 3 / min; The pulse time of the metal source precursor is 0.01~10 seconds, the holding time after the pulse is 1~60 seconds, and the inert gas purging time after holding is 10~200 seconds; the pulse time of the first oxygen source precursor and the second oxygen source precursor is 0.01~10 seconds, the holding time after the pulse is 1~60 seconds, and the inert gas purging time after holding is 110~200 seconds. Specifically, the preset vacuum level is 0.25 Torr.
[0025] S4. Perovskite film transfer: An adhesive transfer carrier is pasted on the surface of the second metal oxide film layer, and an external force is applied to the silicon substrate to cause the silicon substrate to bend and deform, so as to further increase the tensile stress of the gradient stress film structure; when the total strain energy release rate of the gradient stress film structure and the perovskite film layer exceeds the interfacial adhesion force between the perovskite film layer and the silicon substrate, the perovskite film layer is peeled off from the silicon substrate along with the gradient stress film structure. Specifically, the adhesive transfer carrier is a thermal release adhesive tape.
[0026] S5. Removal of adhesive transfer carrier: The perovskite film layer is transferred to the target substrate, and the stacked structure of the perovskite film layer and the target substrate is hot-pressed to achieve a firm bond between the perovskite film layer and the target substrate, and to remove the adhesive transfer carrier, while releasing the residual stress in the gradient stress film structure. Preferably, the temperature for hot pressing is 30~150℃ and the pressure is 0~50 MPa; Specifically, the target substrate is selected from at least one of flexible polymer substrate, ITO conductive glass, and metal foil.
[0027] The transfer method of the present invention can be used to prepare perovskite solar cells; in addition, its applications include, but are not limited to, solar cells, electroluminescent diodes, X-ray detectors, etc.
[0028] Example 1 This embodiment uses MAPbI3 perovskite prepared by spin coating as an example to briefly describe the basic content of the invention. A MAPbI3 precursor solution is spin-coated onto a silicon wafer substrate. The resulting film is placed on a carrier disk and transferred to an atomic layer deposition chamber. The first step uses deionized water and trimethylaluminum (TMA) as precursors to deposit an alumina film with moderate tensile stress. The second step uses oxygen plasma and TMA as precursors to deposit an alumina film with high tensile stress. The third step involves attaching a thermally released adhesive tape as a transfer carrier to the alumina film. The fourth step involves applying external force to the silicon wafer substrate to bend it outwards, further increasing the tensile stress. When the strain energy release rate exceeds the interfacial adhesion force between the perovskite film and the substrate, the perovskite film can be peeled off from the substrate. The fifth step uses a hot-pressing method to achieve firm contact between the perovskite film and the target substrate, and then removes the thermally released adhesive tape.
[0029] See Figures 1-2 A method for transferring perovskite thin films is provided, which specifically includes the following steps: S0. Prepare a perovskite (MAPbI3 as an example) precursor solution: Weigh 190.8 mg of methylamine iodide (MAI) and 553.2 mg of lead iodide (PbI2) and dissolve them in 700 μL of γ-butyrolactone (GBL) and 300 μL of dimethyl sulfoxide (DMSO); place the resulting solution on a magnetic stirrer at 70°C and stir for more than 2 hours, then filter using a 0.22 μm organic filter to obtain the perovskite precursor solution.
[0030] S1. Preparation of perovskite thin film layer 2; including: S11. Cleaning silicon substrate 1: Place silicon substrate 1 in acetone, ethanol and deionized water for ultrasonic cleaning for 15 minutes respectively. After cleaning, blow the silicon substrate 1 dry with nitrogen and place it in an oven at 100°C for 2 hours. After it cools to room temperature, place it in a plasma-ozone generator for 15 minutes to enhance the hydrophilicity of its surface. S12. Preparation of perovskite thin film layer 2: The perovskite thin film layer 2 is prepared by spin coating. Specifically, 60 μL of perovskite precursor solution is uniformly coated onto silicon wafer substrate 1. The spin coater speed is 3000~9000 rpm, the spin coating time is 30~90 seconds, and the acceleration is 1500~4500 rpm. After spin coating, it is placed on a hot plate at 100℃ for annealing for 15 minutes to obtain perovskite thin film layer 2. The perovskite thin film layer 2 is transferred to the reaction chamber of the atomic layer deposition equipment using a tray for subsequent deposition processes.
[0031] S2. Preparation of the first alumina film layer 3 (medium tensile stress alumina film): Deionized water and trimethylaluminum (TMA) were used as precursors to deposit a medium tensile stress alumina film. The specific preparation process of the alumina film is as follows: S21. Evacuate the reaction chamber of the atomic layer deposition equipment to a vacuum of 0.25 Torr, set the temperature to 40~60℃, and use a flow rate of 100~200 cm⁻¹. 3 High-purity argon gas at a rate of / min was used as both carrier gas and cleaning gas; S22. Keep the TMA at room temperature, use argon as the carrier gas, pulse the TMA into the reaction chamber for 0.01~10 seconds, hold for 1~60 seconds, and then purge with argon as the cleaning gas for 10~200 seconds. S23. Using argon as the carrier gas, pulse deionized water into the reaction chamber for 0.01 to 10 seconds, hold for 1 to 60 seconds, and then purge with argon as the cleaning gas for 110 to 200 seconds. S24. The above steps constitute one cycle. The thickness of the first alumina film layer 3 can be adjusted by changing the number of cycles. At the same time, the tensile stress of the alumina film can be controlled by changing the pulse time, holding time and purging time of TMA and H2O (e.g., extending the TMA pulse time can increase the adsorption amount, and shortening the purging time may introduce residual stress). This can achieve a medium tensile stress level (usually controlled within the range of 100~500 MPa by a film stress tester).
[0032] The reaction mechanism of this step: The formation of alumina depends on the alternating chemical adsorption and reaction of TMA and H2O: (1) When TMA (aluminum source) is pulsed into the chamber, its molecules will chemically adsorb onto the hydroxyl groups (-OH) on the substrate surface through Al atoms, forming a single layer of aluminum-based adsorption layer and releasing methane (CH4) gas; (2) After argon gas is purged to remove unadsorbed TMA and byproduct CH4, H2O (oxygen source) is pulsed. H2O molecules will react with the aluminum-based groups adsorbed on the surface to generate Al-O bonds (forming the basic unit of Al2O3) and release hydrogen (H2); (3) Argon gas is purged again to remove unreacted H2O and byproduct H2, completing one ALD cycle. Each cycle generates a single-atom-thick layer of Al2O3 on the substrate surface, and the total thickness of the film is precisely controlled by the number of cycles.
[0033] S3. Preparation of the second alumina thin film layer 4 (high tensile stress alumina thin film): Using deionized water and trimethylaluminum (TMA) as precursors, a high tensile stress alumina thin film was deposited. Oxygen plasma was generated through inductive coupling excited by a radio frequency coil. The specific preparation process of the alumina thin film is as follows: S31. Evacuate the reaction chamber of the atomic layer deposition equipment to a vacuum of 0.25 Torr, set the temperature to 40~60℃, and use a flow rate of 100~200 cm⁻¹. 3 High-purity argon gas at a rate of / min was used as both carrier gas and cleaning gas; S32. Keep the TMA at room temperature, use argon as the carrier gas, pulse the TMA into the reaction chamber for 0.01~10 seconds, hold for 1~60 seconds, and then purge with argon as the cleaning gas for 10~200 seconds. S33. Using argon as a carrier gas, oxygen is pulsed into the reaction chamber. Oxygen plasma is generated by inductive coupling excited by a radio frequency coil. The pulse duration is 0.01~10 seconds, and it is maintained for 1~60 seconds. Then, argon is used as a cleaning gas to purge for 110~200 seconds. S34. The above steps constitute one cycle. The thickness of the second alumina film layer 4 can be adjusted by changing the number of cycles. At the same time, the tensile stress of the alumina film can be changed by changing the pulse, hold, purge time and radio frequency power.
[0034] S4. Perovskite film transfer: A thermal release adhesive tape is pasted on the second alumina film layer 4 as a transfer carrier, and an external force is applied to the silicon substrate 1 to make it bend outward; the tensile stress is further increased, and when the strain energy release rate exceeds the interfacial adhesion force between the perovskite film layer 2 and the silicon substrate 1, the perovskite film layer 2 is peeled off from the silicon substrate 1. S5. Remove the pyrolytic tape: Transfer the transferred perovskite film layer 2 to the target substrate and perform a hot pressing operation on a hot plate to remove the pyrolytic tape. The hot pressing temperature is 30~150℃ and the pressure is 0~50 MPa, and the residual stress in the alumina film is released.
[0035] Application Example: Based on the above transfer method, an inverted perovskite solar cell was fabricated with an efficiency of 25.23%. The results are as follows... Figure 3 As shown.
[0036] It should be understood that the various forms of processes shown above can be used to reorder, add, or delete steps. For example, the steps described in this invention disclosure can be executed in parallel, sequentially, or in different orders, as long as the desired result of the technical solution disclosed in this invention can be achieved, and this is not limited herein.
[0037] The specific embodiments described above do not constitute a limitation on the scope of protection of this invention. Those skilled in the art should understand that various modifications, combinations, sub-combinations, and substitutions can be made according to design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this invention should be included within the scope of protection of this invention.
Claims
1. A method of perovskite thin film transfer printing, characterized by: Specifically comprising the following steps: S1. Preparing a perovskite thin film layer on a silicon wafer substrate; S2. Depositing a first metal oxide thin film layer with a medium tensile stress of 100-500 MPa on the surface of the perovskite thin film layer by using an atomic layer deposition process; S3. Depositing a second metal oxide thin film layer on the surface of the first metal oxide thin film layer by using an atomic layer deposition process, the tensile stress of the second metal oxide thin film layer being higher than that of the first metal oxide thin film layer; the second metal oxide thin film layer and the first metal oxide thin film layer together form a gradient stress thin film structure; S4. Adhering a viscous transfer carrier to the surface of the second metal oxide thin film layer, and applying an external force to cause the silicon wafer substrate to be bent and deformed; when the strain energy release rate exceeds the interfacial adhesion between the perovskite thin film layer and the silicon wafer substrate, the perovskite thin film layer is peeled off from the silicon wafer substrate; S5. Transferring the peroviskite thin film layer to a target substrate, and performing a hot pressing operation on the stacked structure of the peroviskite thin film layer and the target substrate to remove the viscous transfer carrier and release the residual stress in the gradient stress thin film structure.
2. The perovskite thin film transfer method of claim 1, wherein: The preparation method of the peroviskite thin film layer in the step S1 is selected from at least one of spin coating, inkjet printing, doctor blade coating, evaporation, screen printing, and vapor deposition; The crystal structure of the peroviskite thin film layer is selected from at least one of three-dimensional crystal structure, two-dimensional crystal structure, two-dimensional / three-dimensional mixed crystal structure, and peroviskite quantum dot structure.
3. The method of claim 1, wherein: Before preparing the peroviskite thin film layer, a silicon wafer substrate cleaning step is further included: sequentially placing the silicon wafer substrate in acetone, ethanol, and deionized water for ultrasonic cleaning for 10-20 minutes, drying with nitrogen, and then drying in an oven at 90-100°C for 1.5-2.5 hours, and then cooling to room temperature and placing in a plasma-ozone generator for treatment for 10-20 minutes.
4. The perovskite thin film transfer method of claim 1, wherein: The operation of the atomic layer deposition process in the step S2 includes: pumping the reaction chamber of the atomic layer deposition equipment to a preset vacuum degree, setting a preset reaction temperature, and introducing an inert gas as a carrier gas and a cleaning gas at a preset flow rate; then using a metal source precursor and a first oxygen source precursor as raw materials, alternately pulsing the metal source precursor and the first oxygen source precursor into the reaction chamber, and introducing the inert gas to purge for a preset time after each pulse; The operation of the atomic layer deposition process in the step S3 includes: maintaining the preset vacuum degree, the preset reaction temperature, and the inert gas flow rate of the reaction chamber of the atomic layer deposition equipment; using a metal source precursor and a second oxygen source precursor as raw materials, the second oxygen source precursor being an oxygen plasma, alternately pulsing the metal source precursor and the second oxygen source precursor into the reaction chamber, and introducing the inert gas to purge for a preset time after each pulse; In the steps S2 and S3, the thicknesses of the first metal oxide thin film layer and the second metal oxide thin film layer are controlled by adjusting the cycle number; the tensile stresses of the first metal oxide thin film layer and the second metal oxide thin film layer are regulated by adjusting the pulse time, the holding time, and the purge time.
5. The perovskite thin film transfer method of claim 4, wherein: In the steps S2 and S3, the materials of the first metal oxide thin film layer and the second metal oxide thin film layer are selected from at least one of aluminum oxide, titanium dioxide, zinc oxide, and tin oxide prepared based on atomic layer deposition. The preset vacuum degree is 0.2-0.3 Torr, and the preset reaction temperature is 40-60 DEG C. The pulse time of the metal source precursor is 0.01-10 seconds, the holding time after the pulse is 1-60 seconds, and the inert gas purging time is 10-200 seconds; the pulse time of the first and second oxygen source precursors is 0.01-10 seconds, the holding time after the pulse is 1-60 seconds, and the inert gas purging time is 110-200 seconds.
6. The perovskite thin film transfer method of claim 5, wherein: The inert gas is high-purity argon, and the preset flow rate is 100-200 cm 3 / min. The first oxygen source precursor is deionized water. The oxygen plasma is inductively coupled by a radio frequency coil. The preset vacuum degree is 0.25 Torr.
7. The perovskite thin film transfer method of claim 4, wherein: The metal source precursor is trimethylaluminum, and the trimethylaluminum maintains room temperature during the atomic layer deposition process; the material of the first and second metal oxide thin film layers is aluminum oxide.
8. The perovskite thin film transfer method of claim 1, wherein: The temperature of the hot pressing operation in the step S5 is 30-150 DEG C, and the pressure is 0-50 MPa.
9. The perovskite thin film transfer method of claim 1, wherein: The step S1 adopts a spin coating method to prepare the perovskite thin film layer, and the specific operation includes: configuring a perovskite precursor solution, coating on a silicon wafer substrate, spin coating at a speed of 3000-9000 rpm, an acceleration of 1500-4500 rpm / s, and a time of 30-90 seconds, and then annealing on a hot plate at 100 DEG C for 15 minutes to obtain a perovskite thin film layer.
10. The perovskite thin film transfer method of claim 1, wherein: The adhesive transfer carrier is a heat-releasing adhesive tape; and the target substrate is selected from at least one of a flexible polymer substrate, ITO conductive glass, and a metal foil.