Electromagnetic wave reflecting device, electromagnetic wave reflecting fence and assembling method of electromagnetic wave reflecting device

Abstract

The present invention improves radio wave propagation of mobile communication in production facilities such as factories and workshops. An electromagnetic wave reflecting device is provided with: a panel having a reflecting surface that reflects an electromagnetic wave of a desired frequency band selected from the frequency bands of 1-170 GHz; and a support body that supports the panel, the support body having a connection portion that is electrically connected to the reflection surface, and the connection portion transmitting a reference potential of a reflection phenomenon in the reflection surface.

Description

[0001] This application is a divisional application of the patent application No. 202080098719.7 (Filing date: September 19, 2022, Invention Name: Electromagnetic wave reflection device, electromagnetic wave reflection fence, and assembling method of electromagnetic wave reflection device). TECHNICAL FIELD

[0002] The present application relates to an electromagnetic wave reflection device, an electromagnetic wave reflection fence, and an assembling method of an electromagnetic wave reflection device. BACKGROUND

[0003] Industrial IoT (Internet of Things) that makes manufacturing processes automatic, introduces a high level of production, process management, and predictive maintenance (Predictive Maintenance) into manufacturing sites is progressing. The "Smart factory" in the industrial IoT connects devices, equipment, management systems, etc. within a factory with the cloud, edge AI (Artificial Intelligence), and makes manufacturing processes efficient. The introduction of mobile communication technology such as 5G, which is high-speed and large-capacity, low-latency, and capable of connecting multiple devices simultaneously, into the communication network of the industrial IoT that handles a large amount of data is expected. In addition to mobility and flexibility that mobile communication technology inherently has, the low-latency characteristics of 5G are also considered suitable for the industrial IoT.

[0004] A joining structure of a light-transmitting electromagnetic wave shielding sheet used in a building such as an intelligent building is proposed (for example, refer to Patent Literature 1).

[0005] Patent Literature 1: Japanese Patent No. 4892207

[0006] The communication environment in a production facility such as a factory or a plant is different from that of public mobile communication. In a production facility, there are various machines and structures that become propagation obstacles for communication waves, making it difficult to achieve high communication quality. SUMMARY

[0007] An object of the present application is to provide a technology that improves the propagation of mobile communication waves in a production facility.

[0008] In one embodiment of the present disclosure, an electromagnetic wave reflection device includes:

[0009] a panel having a reflection surface that reflects an electromagnetic wave of a desired frequency band selected from a frequency band of 1 GHz to 170 GHz; and

[0010] a support body that supports the panel,

[0011] The support has a connection portion electrically connected to the reflection surface, and the connection portion transmits a reference potential of a reflection phenomenon generated at the first reflection surface.

[0012] With the electromagnetic wave reflection device, the radio wave propagation of mobile communication can be improved in a production facility such as a factory or a plant. BRIEF DESCRIPTION OF DRAWINGS

[0013] FIG. 1 is a schematic view of a process production line in a factory to which the present disclosure can be applied.

[0014] FIG. 2 is a plan view of a wireless transmission system using the electromagnetic wave reflection device of the embodiment.

[0015] FIG. 3A is a view for explaining reflection at a reflection angle identical to an incident angle.

[0016] FIG. 3B is a view for explaining reflection at a reflection angle different from an incident angle.

[0017] FIG. 3C is a view for explaining diffusion in multiple directions.

[0018] FIG. 4 is a view for explaining a basic concept of the electromagnetic wave reflection device of the embodiment.

[0019] FIG. 5A is a view for explaining a modification of the electromagnetic wave reflection device.

[0020] FIG. 5B is a view for explaining a modification of the electromagnetic wave reflection device.

[0021] FIG. 5C is a view for explaining a modification of the electromagnetic wave reflection device.

[0022] FIG. 5D is a view for explaining a modification of the electromagnetic wave reflection device.

[0023] FIG. 6A is a structural example of a reflection surface.

[0024] FIG. 6B is another structural example of a reflection surface.

[0025] FIG. 6C is still another structural example of a reflection surface.

[0026] FIG. 6D is still another structural example of a reflection surface.

[0027] FIG. 7is a diagram showing an example of a connection of an electromagnetic wave reflecting device.

[0028] FIG. 8 is a diagram showing an example of a connection of an electromagnetic wave reflecting device.

[0029] FIG. 9A is a diagram showing an example of a connection of an electromagnetic wave reflecting device.

[0030] FIG. 9B is a diagram showing an example of a connection of an electromagnetic wave reflecting device.

[0031] FIG. 10A is a diagram showing an example of a connection of an electromagnetic wave reflecting device.

[0032] FIG. 10B is a diagram showing an example of a connection of an electromagnetic wave reflecting device.

[0033] FIG. 10C is a diagram showing an example of a connection of an electromagnetic wave reflecting device.

[0034] FIG. 10D is a diagram showing an example of a connection of an electromagnetic wave reflecting device.

[0035] FIG. 10E is a diagram showing an example of a connection of an electromagnetic wave reflecting device.

[0036] FIG. 10F is a diagram showing an example of a connection of an electromagnetic wave reflecting device.

[0037] FIG. 10G is a diagram showing an example of a connection of an electromagnetic wave reflecting device.

[0038] FIG. 10H is a diagram showing an example of a connection of an electromagnetic wave reflecting device.

[0039] FIG. 11A is a diagram showing an example of a connection of an electromagnetic wave reflecting device.

[0040] FIG. 11B is a diagram showing an example of a connection of an electromagnetic wave reflecting device.

[0041] FIG. 11C is a diagram showing an example of a connection of an electromagnetic wave reflecting device.

[0042] FIG. 12 is a diagram showing an example of a connection of an electromagnetic wave reflecting device.

[0043] FIG. 13 is a diagram showing an example of a connection of an electromagnetic wave reflecting device.

[0044] FIG. 14 is a diagram showing an example of a connection of an electromagnetic wave reflecting device.

[0045] FIG. 15 is a graph showing the relationship between the width and thickness of the frame and the reflection characteristics at an incident angle of 0°.

[0046] FIG. 16 is a graph showing the relationship between the width and thickness of the frame and the reflection characteristics at an incident angle of 45°.

[0047] FIG. 17 is a graph showing the relationship between the width, thickness, and material of the bridge electrode and the reflection characteristics at an incident angle of 0°.

[0048] FIG. 18 is a graph showing the relationship between the width, thickness, and material of the bridge electrode and the reflection characteristics at an incident angle of 45°.

[0049] FIG. 19 is a graph explaining the evaluation method of the reflection characteristics.

[0050] FIG. 20A is a graph explaining the analysis space of the reflection characteristics.

[0051] FIG. 20B is a graph explaining the analysis space of the reflection characteristics.

[0052] FIG. 21 is a graph of the simulation model used in the examples and comparative examples.

[0053] FIG. 22 is a graph of the simulation model of Example 3.

[0054] FIG. 23 is a graph of the simulation model of Example 4.

[0055] FIG. 24 is a graph of the simulation model of Reference Example 1.

[0056] FIG. 25 is a graph of the simulation model of Reference Example 2.

[0057] FIG. 26 is a graph showing the reflection characteristics corresponding to the presence or absence of connection between the panel.

[0058] FIG. 27 is a graph showing an example of the assembly method of the bridge electrode and the frame.

[0059] FIG. 28 is a graph explaining the size of the Meta Reflector.

[0060] FIG. 29 is a graph showing the study of the area size corresponding to the position relationship with the operating frequency and the transceiver.

[0061] FIG. 30AThis is a diagram illustrating the configuration relationships of a wireless transmission system.

[0062] FIG. 30B This is a diagram illustrating the configuration relationships of a wireless transmission system.

[0063] FIG. 31A This is a graph representing the baseline robustness of reflection mode 1.

[0064] FIG. 31B This is a graph representing the baseline robustness of reflection mode 2.

[0065] FIG. 32 This is a diagram illustrating the quantification method for benchmark robustness.

[0066] FIG. 33A This is a diagram showing the changes in phase jump in reflection mode 1.

[0067] FIG. 33B This is a diagram showing the phase transition change in reflection mode 2. Detailed Implementation

[0068] <Overall System Status>

[0069] FIG. 1 This is a schematic diagram of a production line within a factory that can utilize the methods disclosed herein. A production line is a strip-shaped production site configured as a series of processes, including equipment and machinery used for assembly and production. In Industrial IoT, industrial devices, equipment, and management systems used in the production line are connected to a network, thereby improving production efficiency and ensuring on-site safety.

[0070] Base stations BS1 and BS2 are configured to connect the equipment in the production line to the network. The equipment M1 and M2 used in the production line each have wireless communication units WT1 and WT2, respectively, and are connected to the network by communicating with at least one of the base stations BS1 and BS2.

[0071] To enable wireless connectivity between equipment and the network on the production line, base stations BS1 and BS2 (hereinafter collectively referred to as "BS") provide a rectangular service area with a relatively long horizontal dimension. In the technical specification document (TS22.104) of 3GPP (3rd Generation Partnership Project), the standardization organization for mobile communications, a service area with an aspect ratio of 3 to 5 times the length of a rectangular region in the horizontal plane is shown as a system request. For example, the area size for a use case referred to as "Motion Control" is specified as 50m × 10m × 10m (length × width × height).

[0072] To cover the production line and enable network connectivity for devices M1 and M2 within the service area provided by base stations BS1 and BS2, base stations BS1 and BS2 are positioned at the ends of the long side of the production line, which is effective in terms of coverage. To improve communication quality and coverage, base stations BS1 and BS2 can also coordinate and cooperate. The detailed configuration relationship of the base stations BS relative to the production line will be described later.

[0073] FIG. 2 This is a plan view of a wireless transmission system 1 using the electromagnetic wave reflecting device 10 of the embodiment. The wireless transmission system 1 includes: a process production line 3 equipped with production equipment capable of receiving and transmitting electromagnetic waves; a base station BS for wireless communication with equipment on the process production line 3; and an electromagnetic wave reflecting device 10 disposed along the process production line 3. The electromagnetic wave reflecting device 10 has a reflecting surface 105 for reflecting electromagnetic waves. The surface of the process production line is designated as the XY plane, and the vertical direction perpendicular to the XY plane is designated as the Z direction.

[0074] The equipment within process production line 3 includes all production-related equipment such as sensors, actuators, micro-devices, assembly units, manufacturing machinery, and management systems. The equipment used in process production line 3 is not limited to fixed devices or machinery; it can also include equipment that moves freely within the process production line 3.

[0075] Base station BS and devices M1 and M2 with wireless communication capabilities (see reference) FIG. 1 For example, transmitting and receiving radio waves in specific frequency bands within the 1GHz to 170GHz range. The components of the production line and surrounding structures (such as pipes and tubes) are mostly made of metal, which reflects and shields radio waves. Furthermore, high-frequency radio waves, such as those in the millimeter-wave band, have strong linearity and low diffraction, making them difficult to reach. For equipment located in the central part of production line 3, reflections from surrounding equipment and processed metal products create obstacles, deteriorating the communication environment.

[0076] While configuring multiple base stations (BSs) along the long side of production line 3 can maintain communication quality, it hinders efficient use of the workspace and increases equipment costs. In wireless transmission system 1, an electromagnetic wave reflector 10 is configured along the long side of production line 3, and base stations (BSs) are positioned at the ends of the long side of production line 3. The electromagnetic wave reflector 10 reduces the number of base stations (BSs) installed within the production facility, improving the wireless communication environment between the base stations (BSs) and equipment within production line 3.

[0077] The electromagnetic wave reflecting device 10 may also be configured to be approximately parallel to the long axis of the process production line 3, relative to at least a portion of the process production line 3. "Approximately parallel" means that the electromagnetic wave reflecting device 10 does not need to be configured to be strictly parallel to the long axis of the process production line 3. Within the range of efficient radio wave transmission and reception between the base station BS and the equipment within the process production line 3, the electromagnetic wave reflecting device 10 may also be slightly tilted relative to the long axis of the process production line 3.

[0078] The electromagnetic wave reflecting device 10 reflects electromagnetic waves in the frequency band of 1 GHz to 170 GHz using a reflecting surface 105. The reflecting surface 105 is formed by at least one of a conventional reflector 101 that provides normal reflection with an incident angle equal to the reflection angle, and a meta-reflector 102, which is an artificial surface that controls the reflection characteristics of the incident electromagnetic waves. A "meta-reflector" is a type of "metasurface" that controls the transmission and reflection characteristics of the incident electromagnetic waves. In the meta-reflector, multiple scatterers that are sufficiently small compared to the wavelength are arranged to control the reflection phase distribution and amplitude distribution, thereby reflecting electromagnetic waves in a predetermined direction other than the direction of normal reflection. Through the meta-reflector 102, in addition to reflection in directions other than normal reflection, diffusion with a predetermined angular distribution and wavefront formation can also be achieved.

[0079] FIG. 3A-3C This indicates the mode of reflection in the reflecting surface 105 of the electromagnetic wave reflecting device 10. FIG. 3A In the ordinary reflector 101, the electromagnetic wave incident on the ordinary reflector is reflected at the same reflection angle θref as the incident angle θin.

[0080] exist FIG. 3B In this process, electromagnetic waves incident on superreflector 102a are reflected at a reflection angle θref that differs from the incident angle θin. The absolute value of the difference between the reflection angle θref of superreflector 102 and the normal reflection angle can also be called the anomalous angle θabn. As described above, by placing a metal patch or the like, which is sufficiently small in wavelength, on the surface of superreflector 102a, surface impedance is formed, thereby controlling the reflection phase distribution and reflecting the incident electromagnetic waves in the desired direction. Although detailed later, when using electromagnetic wave reflecting device 10 in a longitudinally elongated process production line 3, such as... FIG. 3B In this way, it is expected that the electromagnetic wave will be guided to the wireless communication unit WT of the equipment in the process production line 3 with a reflection angle θref smaller than the incident angle θin of the electromagnetic wave incident from the base station BS.

[0081] The electromagnetic waves reflected by a super reflector may not be plane waves with a single reflection angle. The surface impedance formed on the surface of the super reflector 102b is designed, thereby... FIG. 3CAs shown, the incident electromagnetic wave propagates in multiple directions with multiple different reflection angles θref. As a realization FIG. 3C Methods of reflection include, for example, those described in PHYSICAL REVIEW B 97, “ARBITRARY BEAM CONTROL USING LOSSLESS METASURFACES ENABLED BY ORTHOGONALLYPOLARIZED CUSTOM SURFACE WAVES”. The intensity of the diffused electromagnetic wave can be uniform or it can have a prescribed intensity distribution corresponding to the direction of reflection.

[0082] Multiple electromagnetic wave reflectors 10 can also be configured along the process production line 3. As long as the communication quality between the base station BS and the equipment within the process production line 3 can be guaranteed, the electromagnetic wave reflectors can also be used as safety barriers. Before describing the optimal configuration of the base station BS relative to the process production line 3, the following describes the detailed structure of the electromagnetic wave reflector 10.

[0083] <Structure of Electromagnetic Wave Reflection Device>

[0084] FIG. 4 This diagram illustrates the basic concept of the electromagnetic wave reflecting device 10 according to the embodiment. The electromagnetic wave reflecting device 10 is configured to stand upright on the XY plane where a process production line is located. The height direction of the electromagnetic wave reflecting device 10 is the Z direction. The electromagnetic wave reflecting device 10 includes: a panel 13 having a reflective surface 105 that reflects electromagnetic waves from a desired frequency band selected from the frequency band of 1 GHz to 170 GHz; and a support 11 that supports the panel 13.

[0085] The reflective surface 105 of panel 13 reflects electromagnetic waves in a desired direction. The reflective surface 105 is formed by at least one of a conventional reflector 101 that performs regular reflection and a super reflector 102 that has an artificial surface that controls the reflection characteristics of the incident electromagnetic waves. The conventional reflector 101 may also include a reflective surface formed of an inorganic conductive material or a conductive polymer material.

[0086] The super reflector 102 is not limited in material, surface shape, or manufacturing method, as long as it can reflect the incident electromagnetic wave in a desired direction or diffuse it at a desired angular distribution. Typically, a metasurface can be obtained by forming a metal patch with a sufficiently small wavelength on the surface of a conductor such as a metal through a dielectric layer. The super reflector 102 is positioned at any location on the reflecting surface 105 according to the design of the electromagnetic wave reflection direction.

[0087] The dimensions of panel 13 can be appropriately designed to suit the environment in which it will be used. As an example, panel 13 has a width of 0.5m to 3.0m, a height of 1.0m to 2.5m, and a thickness of 3.0mm to 9.0mm. Considering ease of transport, installation, and assembly in the factory, the dimensions of panel 13 can also be approximately 1.4m × 1.8m × 5.0mm. A portion of panel 13 can also be transparent to visible light.

[0088] Panel 13 is supported by support body 11 in a manner that allows electromagnetic wave reflecting device 10 to stand independently. The mechanical structure of support body 11 can be arbitrary as long as it enables panel 13 to stand stably relative to the mounting surface (e.g., the XY plane). As will be described later, multiple electromagnetic wave reflecting devices 10 can also be connected together for use. The overall height of electromagnetic wave reflecting device 10, including panel 13 and support body 11, is, for example, 1.5m to 2.5m, but it can also be set to a height of about 2.0m from the mounting surface.

[0089] In addition to its mechanical design for allowing the panel 13 to stand independently, the support 11 also has an electrical connection portion 15 that makes the potential surface of the reflection caused by the reflective surface 105 of the panel 13 continuous. When multiple electromagnetic wave reflecting devices 10 are connected together, if the current flowing through the incident electromagnetic wave (referred to as the reflected current) is interrupted between the panels 13 of adjacent electromagnetic wave reflecting devices 10, the energy of the electromagnetic wave to be reflected will be attenuated, and it will radiate in an unwanted direction, thus degrading the communication quality.

[0090] In two adjacent panels, to ensure the continuity of the reflected current, it is preferable that the reference potential for reflection is transmitted at high frequency from one panel to the other by the support 11, and the reference potential is shared at high frequency between the two adjacent panels. Preferably, the continuity of the reflected current is as uniform as possible in the connection area of ​​the support 11. The structure of the reference potential for reflection generated on the reflective surface of the panel by the support can also be called the structure of the "reference" reference potential.

[0091] In the electrical connection portion 15 of the support 11, in order to transmit a reference potential on one panel and share a reference potential on the other panel, it is preferable to design the edges of the panel 13 and suppress the influence of reflection characteristics. The "edge" of the panel 13 refers to the end that connects two opposing main surfaces. The specific structure of the electrical connection portion is shown in [reference needed]. FIG. 7-9B To be continued later.

[0092] FIG. 5A-5D This illustrates a modified example of the electromagnetic wave reflecting device 10. The mounting surface of the electromagnetic wave reflecting device 10 is designated as surface P. FIG. 5AIn the electromagnetic wave reflecting device 10A, the superreflector 102 is configured to be movable. The position of the superreflector 102 in the reflecting surface 105 can be made variable, and any structure can be used as long as interference between the superreflector 102 and the reflecting surface 105 can be suppressed. As an example, the rod 16 holding the superreflector 102 can be mounted so that it can slide in the horizontal direction of the panel 13, and the position of the superreflector 102 can be maintained on the rod 16 so that it can move in the vertical direction.

[0093] The rod 16 can also be made of a non-metallic material with a low dielectric constant that does not impede the reflective characteristics of the ordinary reflector 101 or the super reflector 102. The rod 16 can also be designed to minimize or eliminate optical and mechanical interference at the panel interface. The super reflector 102 can be moved to an optimal position on the panel 13 based on the site environment where the electromagnetic wave reflecting device 10 is configured and its positional relationship with the base station BS. FIG. 4 Similarly, the support 11 has an electrical connection 15 inside.

[0094] FIG. 5B This refers to the electromagnetic wave reflecting device 10B. In the electromagnetic wave reflecting device 10B, as a reinforcing member to improve the rigidity of the panel 13, an inclined support 19 may be provided on the side of the panel 13 opposite to the reflecting surface 105. For example, the inclined support 19 may also be erected between the support body 11 that holds both ends of the panel 13.

[0095] exist FIG. 5C In the electromagnetic wave reflecting device 10C, reinforcing beams 21a and 21b are provided above and below the panel 13. The reinforcing beams 21a and 21b can be inserted between the support bodies 11 that support both sides of the panel 13.

[0096] exist FIG. 5D In the electromagnetic wave reflecting device 10D, a diagonal support column 19 is provided between the reinforcing beam 21a or 21b and the support body 11. These reinforcing mechanisms suppress the vibration modes of the panel 13, stabilize electromagnetic wave reflection relative to the factory floor vibration, and achieve lightweighting of large-area panels. FIG. 5B-5D In the case where an electrical connection portion 15 for referencing a reflected reference potential is provided inside the support body 11, the situation is similar to... FIG. 4 same.

[0097] FIG. 5A-5D The variations can be combined with each other. For example, when using FIG. 5A In the case of panel 13 with the same structure, the super reflector 102 can be kept movable on the side of the reflective surface 105, and an inclined support 19 can be provided on the side opposite to the reflective surface 105.

[0098] <Structure of the Reflecting Surface>

[0099] FIG. 6A-6D This section shows a structural example of the reflective surface 105. The reflective surface 105 can have any structure, as long as it reflects electromagnetic waves in the range of 1 GHz to 170 GHz. As an example, the reflective surface 105 can be formed by a combination of a mesh conductor, a conductive film, a transparent resin, and a conductive film that reflects electromagnetic waves in any frequency band selected from the range of 1 GHz to 170 GHz.

[0100] By designing the reflector 105 to reflect radio waves in the desired frequency bands from 1GHz to 170GHz, it can cover the main bandwidths currently used in Japanese mobile communications, namely the 1.5GHz and 2.5GHz bands. In next-generation 5G communication networks, the 4.5GHz and 28GHz bands are planned. Overseas, 5G bands are planned to include 2.5GHz, 3.5GHz, 4.5GHz, 24-28GHz, and 39GHz bands. It can also handle the upper limit of the millimeter-wave band, 52.6GHz, which is the standard frequency for 5G.

[0101] On the other hand, frequencies exceeding 170 GHz are unlikely to be practically utilized for smart factory applications at this stage. In the future, when realizing indoor terahertz-band mobile communication, the reflection band of the reflector 105 can be extended to the terahertz band by applying photonic crystal technology and other methods.

[0102] exist FIG. 6A In this embodiment, panel 13A has a reflective surface 105 of conductor 131. Conductor 131 may not be a homogeneous conductive film, as long as it can reflect at least 30% of electromagnetic waves in the 1GHz to 170GHz frequency range. For example, it may be a mesh or grid formed to reflect electromagnetic waves in the aforementioned frequency band, or it may be an arrangement of holes. The repeating interval forming the aforementioned density may be a uniform period or a non-uniform period. This period or average period is preferably less than 1 / 5 of the wavelength of the aforementioned frequency, more preferably less than 1 / 10.

[0103] The mesh size of wire mesh fences commonly used in factories and warehouses is 3.2cm, 4cm, 5cm, etc., allowing most electromagnetic waves in the 1GHz to 170GHz range to pass through. Even if there is slight reflection of electromagnetic waves by the wire mesh fence in the 1GHz to several GHz range, this can be considered as transmission dominating in these frequency bands, making stable reflection, as expected for improving the communication environment, impossible.

[0104] exist FIG. 6BIn this design, panel 13B is a conventional reflector, having a laminated structure of conductor 131 and dielectric 132 that is transparent relative to the operating frequency. Either surface of conductor 131 serves as a reflective surface 105. When an electromagnetic wave is incident from one side of conductor 131, the interface between conductor 131 and air becomes the reflective surface 105. When an electromagnetic wave is incident from one side of dielectric 132, the interface between conductor 131 and dielectric 132 also becomes the reflective surface 105.

[0105] The dielectric 132 that holds the conductor 131 or covers the surface of the conductor 131 preferably has rigidity capable of withstanding vibration and meets the safety requirements of ISO 014120 (International Organization for Standardization). Since it is used in a factory, it is preferable that it can withstand impacts and provide protection even if it collidees with parts or a portion of the manufacturing equipment, and that it is transparent in the visible light region. As an example, optical plastics, reinforced plastics, and reinforced glass with a specified or higher strength are used. As optical plastics, polycarbonate (PC), polymethyl methacrylate (PMMA), polystyrene (PS), etc., can also be used.

[0106] exist FIG. 6C In the middle, panel 13C has a conductor 131 sandwiched between dielectrics 132 and 133. Depending on the incident direction of the electromagnetic wave, the interface with either dielectric becomes a reflecting surface 105. The required rigidity of dielectrics 132 and 133 is... FIG. 6B The structures are the same.

[0107] exist FIG. 6D In the middle, panel 13D can also be used. FIG. 6B A portion of the laminate has a super reflector 102. The laminate of conductor 131 and dielectric 132 can be used as a conventional reflector 101. Alternatively, the super reflector 102 can be fixed to the surface of the dielectric 132 of the conventional reflector 101 by bonding or the like. The region of the three-layer structure of conductor 131, dielectric 132, and super reflector 102 can become an asymmetric reflection region AS forming a metasurface. The region of the two-layer structure of conductor 131 and dielectric 132 without the super reflector 102 can become a symmetric reflection region SY that provides normal reflection.

[0108] exist FIG. 6D In the example, such as FIG. 4 In this way, the super reflector 102 is integrally mounted into the panel 13D with the ordinary reflector 101, but it can also be used as a structure that can be separated from the ordinary reflector 101. As a separable structure, such as... FIG. 5AIn this way, a super reflector 102 with a variable position can also be used. The position of the super reflector 102 on the panel 13 can be selected according to the site environment, thereby adjusting the position of the asymmetrical reflection area.

[0109] <Connection Structure of Support>

[0110] like FIG. 7 In this way, multiple electromagnetic wave reflecting devices 10 can be connected and arranged on surface P via the support body 11. For example, when electromagnetic wave reflecting device 10-1 and electromagnetic wave reflecting device 10-2 are connected, panel 13-1 and panel 13-2 are connected by the electrical connection portion 15 of the support body 11 so that the reflected potential surface is continuous. As described above, the support body 11 has the mechanical strength to connect the panels 13 and the electrical connection performance to make the reflected reference potential continuous between the panels 13. Hereinafter, an example of the structure of the electrical connection portion 15 is shown.

[0111] FIG. 8 Using electromagnetic wave reflecting device 10 on surface P (reference) FIG. 7 The horizontal sectional view when erected shows an example of the electrical connection 15 of the support 11. The connection 15 is designed to transmit the reference potential of the reflection of one panel to an adjacent panel so that the reference potential of the reflection phenomenon can be shared between adjacent panels 13.

[0112] The support 11 has a frame 111 and an electrical connection 15 disposed on the frame 111, forming a common reflective potential surface between the panels 13. The connection 15 can be of any structure as long as it can stably transmit or share a reflected reference potential between adjacent panels 13-1 and 13-2 (hereinafter, suitably collectively referred to as "panels 13"). The frame 111 can also be of any structure if it has the strength to stably maintain the electrical connection 15. FIG. 8 In the structure, the frame 111 can also be formed of an electrically insulating material.

[0113] exist FIG. 8In this example, the connecting portion 15 has conductive edge sleeves 17-1 and 17-2 (hereinafter, appropriately referred to collectively as "edge sleeve 17") that hold the edges of panel 13, and a bridge electrode 112 that electrically connects edge sleeve 17 to an adjacent panel. The bridge electrode 112 is an example of a conductive bridge erected on the potential surfaces of panel 13-1 and panel 13-2. Edge sleeves 17-1 holding the edges of panel 13-1 and edge sleeves 17-2 are electrically connected by the bridge electrode 112. The bridge electrode 112 makes surface contact with edge sleeves 17-1 and 17-2 to reliably establish the electrical connection. If a reflected current is generated in panel 13-1, the reflected current flows from edge sleeve 17-1 through the bridge electrode 112 to edge sleeve 17-2 and into conductor 131 of panel 13-1. The reflected current flows in a shorter current path, resulting in less parasitic current and good reflection performance.

[0114] From the viewpoint that the reflection in panel 13 is shared between panels 13 and that the panels are connected to each other, the width WFRM of frame 111 is preferably 150 mm or less, more preferably 20 mm or more and 60 mm or less. From the same viewpoint, the thickness of frame 111 is preferably 15 mm or less, more preferably 10 mm or less, and even more preferably in the range of 2 mm or more and 7.5 mm or less.

[0115] From the viewpoint of enabling the shared reflective potential surfaces between panels 13 to be formed with the smallest possible size, the width WBRG of the bridge electrode 112, which serves as a conductive bridge, is preferably 100 mm or less, more preferably 10 mm or more and 50 mm or less. From the same viewpoint, the thickness of the bridge electrode 112 is preferably 20 mm or less, more preferably 10 mm or less, and even more preferably 1 mm or more and 5 mm or less. Regarding the basis for the width and thickness of the frame 111 and the bridge electrode 112, refer to... FIG. 14 and FIG. 14 The accompanying diagrams will be described later.

[0116] The appropriate dimensions of frame 111 and bridge electrode 112 are as shown in the reference. FIG. 19 As will be discussed later, it can be determined using general-purpose three-dimensional electromagnetic field simulation software. For example, the FDTD method, finite element method, and method of moments can be used as solutions for three-dimensional electromagnetic field simulation.

[0117] Alternatively, the corners of the conductive material portions in the connecting portion 15, i.e., the bridge electrode 112, the metal layer 121 described in the modified example below, etc., can be chamfered with a predetermined curvature R, thereby stabilizing the scattering at the edge of the conductor. The radius of curvature R in the chamfered portion is at least R = 1 mm or more, preferably 2 mm or more, more preferably 4 mm or more, and even more preferably 8 mm or more. This will be described later.

[0118] The frame 111 is configured to ensure the strength of the support 11, and is preferably formed of an insulating elastomer, resin, or the like, thereby preventing the shunting of reflected current. Furthermore, the above-mentioned preferred range can also be applied in the variations described below.

[0119] FIG. 9A and FIG. 9B This shows an example of edge processing for panel 13. FIG. 9A In this design, panel 13 serves as a reflective surface 105 and has a conductor 131 sandwiched between dielectrics 132 and 133. Edge sheath 17, as an example, is a conductive rail with an open square or U-shaped cross-section, and may also have a set of outer surfaces 171 and a bottom surface 172 connecting the outer surfaces 171. A conductive adhesive material 18, such as silver paste, may also be pre-coated onto the inner surface of edge sheath 17.

[0120] Conductor 131 may also be folded back at the edge of panel 13 and led out toward the surface of at least one of the dielectric materials. If the edge of panel 13 is inserted into edge sleeve 17, the folded portion 131a of conductor 131 makes surface contact with the inner wall of edge sleeve 17. By leading conductor 131 toward the surface of panel 13 at the folded portion 131a, the contact area between conductor 131 and edge sleeve 17 is increased, thereby stabilizing the electrical connection.

[0121] like FIG. 9B As shown, a notch 134 can also be formed along the edge of panel 13 to reduce the thickness of dielectrics 132 and 133. A structure can also be formed where the thinned edge region through the notch 134 fits into the edge sheath 17. In this structure, the outer surface 171 of the edge sheath is aligned with the surface of panel 13, making panel 13 easier to handle.

[0122] FIG. 10A-10G This shows a modified example of the connecting portion 15 of the support body 11. FIG. 10AIn this design, the support 11A replaces the insulating frame 111, and is formed of a carbon-containing material. The electrical connection portion 15A is formed by the frame 111A, edge sheaths 17-1 and 17-2. CFRP (Carbon Fiber Reinforced Plastics) can be used as the carbon-containing material. By combining carbon fiber with resin, high strength can be achieved by integrally molding the carbon fiber (as a conductor) and the resin (as an insulator) using a continuous drawing molding manufacturing method.

[0123] The CFRP that holds the edge sleeves 17-1 and 17-2 together forms the electrical connection 15A. An electrical connection between the edge sleeves 17-1 and 17-2 can be achieved without using the bridge electrode 112. From a reflective perspective, carbon fiber exhibits superior reflectivity compared to a metal bulk, resulting in excellent reflective properties for the frame 111A itself. To achieve both reflectivity and strength, the carbon fiber content of the CFRP is preferably 50% or more, 60% or more, 70% or more, 80% or more, or 90% or more. Conversely, the resin content of the CFRP is preferably 50% or less, 40% or less, 30% or less, 20% or less, or 10% or less.

[0124] exist FIG. 10B In this structure, the support 11B comprises a frame 111B with a stacked metal layer 121 and a resin layer 122. The metal layer 121 connects the panels 13-1 and 13-2 by covering the edge sleeves 17-1 and 17-2. The metal layer 121 in contact with the edge sleeves 17-1 and 17-2 forms an electrical connection 15B. The resin layer 122 reinforces the panel-to-panel connection of the metal layer 121 from the outside. The reinforcement (i.e., the resin layer 122) can also be achieved using an adhesive. The adhesive can be an acrylic adhesive or an epoxy adhesive. This structure reduces parasitic current. The structure formed by the combination of the metal layer 121 and the resin layer 122 simplifies the design and fabrication of the frame 111B. When viewed in the stacking direction, the metal layer 121 is sandwiched between the resin layer 122, thereby ensuring the strength of the frame 111B.

[0125] FIG. 10C The process will be carried out FIG. 8The edge-treated panels 13 are connected to each other. Since the surface of the panel 13 is aligned with the outer wall of the edge sleeve 17, the panel 13 can be inserted into the frame 111C with the edge sleeve 17 already embedded in the edge of the panel 13. The frame 111C is made of insulating plastic, for example. In the electrical connection portion 15C, the reflected current flows from the edge sleeve 17 through the bridge electrode 112C into the conductor 131 of the adjacent panel with a shorter current path. The bridge electrode 112C can also be formed in a wide manner to make surface contact with the entire outer surface of the edge sleeves 17-1 and 17-2. When electromagnetic waves are reflected using the panel 13-1, as shown by the white arrow, at least a portion of the high-frequency current flows through the bridge electrode 112C to the conductor 131 of the panel 13-2, thus reducing current parasitics.

[0126] FIG. 10D This illustrates a structural example of the connecting portion 15D of the support 11D. The connecting portion 15D has a bridge electrode 114 that electrically connects the edge sheath 17-1 and the edge sheath 17-2. The bridge electrode 114 electrically connects the bottom surfaces 172 of the edge sheath 17-1 and the edge sheath 17-2 to each other. FIG. 10D The structure is advantageous in terms of allowing high-frequency waves to flow from conductor 131-1 to edge sheath 17-1, bridge electrode 114, edge sheath 17-2, and conductor 131-2 via the shortest path.

[0127] exist FIG. 10D In the example, the bridge electrode 114 connects a portion of the bottom surface 172 of the edge sleeve 17-1 and the edge sleeve 17-2. However, the thickness of the bridge electrode 114 can be increased, connecting the bottom surface 172 of the edge sleeve 17-1 and the edge sleeve 17-2 across the entire surface. This thickens the bridge electrode 114, resulting in a more stable electrical and physical connection. The bridge electrode 114 is surrounded by an insulating frame 111D, thereby ensuring the mechanical strength of the electrical connection portion 15D and the reliability of the electrical connection.

[0128] FIG. 10E This section illustrates a structural example of the connecting portion 15E of the support 11E. The connecting portion 15E has an H-shaped horizontal cross-section, connecting a pair of opposing bridge electrodes 112a and 112b via bridge electrodes 114. The bridge electrodes 114 ensure an integral electrical connection between the bottom surfaces 172 of the edge sheath 17-1 and the edge sheath 17-2, thereby achieving both electrical connection stability and mechanical strength. The bridge electrodes 114, 112a, and 112b can also be formed integrally. The frame 111E covering the connecting portion 15E can be formed from an insulating material such as resin, or from CFRP. A curable adhesive can also be used as the resin.

[0129] FIG. 10FThis example illustrates a composite frame 111F made of metal and resin. The frame 111F has a metal connector 141 and a resin reinforcement 142 covering the connector. The connector 141 is easily manufactured by extrusion molding or similar methods, ensuring electrical connection, and the connector itself also possesses a certain degree of strength. The resin reinforcement 142 covers its surroundings, thereby ensuring the strength of the supporting material through both the connector 141 and the resin reinforcement 142. The resin reinforcement 142 can also be an adhesive. The adhesive can be an acrylic adhesive or an epoxy adhesive. This reduces the thickness of the connector 141, thereby suppressing the generation of residual inductance caused by current detours. Furthermore, the ends are rounded to prevent diffraction at the corners.

[0130] FIG. 10G This illustrates a structural example of the connecting portion 15G of the support body 11G. The connecting portion 15G and... FIG. 10E Similarly, a bridge electrode 173 with an H-shaped horizontal cross-section is used. FIG. 10G In this configuration, panels 13-1 and 13-2 are embedded with bridge electrodes 173 without edge sheaths, allowing the folded-back conductors 131 to be directly electrically connected to the bridge electrodes 173. Frame 111G covers the outer surface 173a of the bridge electrodes 173. FIG. 10G In this example, the width WBRG of the bridge electrode is set to be shorter than the width of the frame 111G, and the panels 13-1 and 13-2 are easily fitted together. However, this is not limited to this example; the widths of the frame 111G and the bridge electrode 173 can also be the same. Furthermore, in... FIG. 8 and FIG. 10A-10G In the connection structure, the surface of the bridge electrode can also be coated with an insulating coating.

[0131] FIG. 10H As a reference example, a construction using a conventional frame 1100 formed by aluminum extrusion is shown. In the frame 1100, which has a complex cross-sectional shape, current flows in various directions, generating residual inductance and stray capacitance due to complex current routing paths. Because its response varies complexly with incident electromagnetic waves, it can adversely affect the reference or transmission of the reference potential. From these aspects, the connection portion 15 of the support 11 is preferably made of... FIG. 8 and FIG. 10A-10G The structure shown.

[0132] <Panel Links>

[0133] FIG. 11AThis diagram illustrates the connection between electromagnetic wave reflecting devices 10-1 and 10-2. Edge sleeves 17-1 are provided on both sides of panel 13-1. Edge sleeves 17-2 are provided on both sides of panel 13-2. Panel 13-1 and panel 13-2, pre-fitted with edge sleeves 17-1 and 17-2, are connected by support body 11.

[0134] The support 11 may also include a frame 111 with an electrical connection portion 15 and a guide beam 118 for receiving the frame 111. For example... FIG. 11A As in the structural example, the frame 111 and the guide beam 118 can be formed separately or as a single unit. If the frame 111 receives the panels 13-1 and 13-2 from both sides, the bridge electrode 112 of the connecting part 15 makes surface contact with both the outer surface of the edge sheath 17-1 of the panel 13-1 and the outer surface of the edge sheath 17-1 of the panel 13-2. Thus, an electrical connection is established between the reflecting surface 105-1 of the electromagnetic wave reflecting device 10-1 and the reflecting surface 105-2 of the electromagnetic wave reflecting device 10-2.

[0135] By embedding the frame 111, which connects the panels 13-1 and 13-2, into the guide beam 118, the frame 111 and the guide beam 118 become one, thus forming the support 11.

[0136] FIG. 11B This indicates the state of the electromagnetic wave reflecting device 10 before connection. In each of the electromagnetic wave reflecting devices 10-1 to 10-3, a frame 111 with an electrical connection part 15 is pre-installed on one side edge of the panel 13, and a guide beam 118 is installed on the other side edge. The reflecting surface 105 of the electromagnetic wave reflecting devices 10-1 to 10-3 can also be... FIG. 6A-6D Any structure.

[0137] The frame 111 is configured to be embedded in the guide beam 118 disposed in other electromagnetic wave reflecting devices 10. The guide beam 118 is configured to receive the frame 111 disposed in other electromagnetic wave reflecting devices 10. For example, the guide beam 118 of electromagnetic wave reflecting device 10-1 receives the frame 111 of electromagnetic wave reflecting device 10-2. The guide beam 118 of electromagnetic wave reflecting device 10-2 receives the frame 111 of electromagnetic wave reflecting device 10-3. By combining the standard-sized electromagnetic wave reflecting devices 10 into a single unit, the length of the production line can be accommodated. Assembly can be carried out on-site in the factory. The individual electromagnetic wave reflecting devices 10-1 to 10-3 have simple structures and are easy to transport.

[0138] FIG. 11CThis indicates the state of the connected electromagnetic wave reflecting device 10. The frame 111 and the guide beam 118 are integrated to form a support body 11. Multiple electromagnetic wave reflecting devices 10-1, 10-2, and 10-3 can also be connected through the support body 11 to form an electromagnetic wave reflecting fence 100. The electrical connection portion 15 of the frame 111 can suppress the discontinuity of reflected current in the connection portion between the panels 13.

[0139] A base 119 is pre-installed on at least one of the guide beam 118 and the frame 111, thereby allowing the electromagnetic wave reflecting devices 10-1 to 10-3, which are connected thereto, to stand independently on the mounting surface via the base 119 of the support body 11. Alternatively, an edge cover 29 can be installed on the edge of the panel 13 of the electromagnetic wave reflecting device 10-3 located at the far end to protect the edge sheath 17 and the guide beam 118.

[0140] FIG. 12 and FIG. 13 This refers to a mechanism for strengthening the connection when multiple electromagnetic wave reflecting devices 10-1 and 10-2 are connected. FIG. 12 (A) is the front view of the electromagnetic wave reflecting fence 100. FIG. 12 (B) is a side view showing the state of the reinforcing mechanism 125 before it is tightened. FIG. 12 (C) is a side view showing the state after the reinforcing mechanism 125 is tightened. FIG. 13 This is a structural example of strengthening mechanism 125. FIG. 13 The front view of the guide groove 129 and the state of section A and section B are shown. The guide groove 129 is formed on the mounting surface 127a of the cover 127 used by the reinforcing mechanism 125 to be mounted on the panel 13.

[0141] To improve connection strength and electrical connectivity, appropriate methods can be used without degrading reflective properties. FIG. 12 and FIG. 13 The reinforcing mechanism 125 is shown. A hole 126 is formed in the panel 13, through which a pin 128 passes, and a cover 127 is mounted on the side of the panel 13 opposite to the reflective surface. The pin 128 is moved along the guide groove 129 formed on the mounting surface 127a of the cover 127 (transition from section A to section B), thereby allowing the panel 13 to be pressed against the support 11 from both sides. By fastening the reinforcing mechanism 125, the position of the hole 126 formed in the panel 13 is slightly shifted toward the support 11. By the elasticity of the panel 13, the edge of the panel 13 is connected to the connection portion 15 of the support 11 (see reference). FIG. 17 The connection becomes reliable.

[0142] The mechanism for strengthening the connection of multiple electromagnetic wave reflecting devices 10 is not limited to FIG. 12 , FIG. 13The example shown can also utilize appropriate fastener mechanisms, ratchet mechanisms, etc., within the range that does not impede the reflection characteristics of electromagnetic waves. The design of the edge sheath 17 and the connecting portion 15 can also be appropriately adjusted by assuming such a crimping process.

[0143] <Evaluation of the support>

[0144] The dimensions and characteristics of the support 11 are evaluated below. FIG. 14 This is a schematic diagram of a model for evaluating the appropriate dimensions of the frame 111 and the bridge electrode 112. In this model, based on the reflection characteristics when a connection portion 15 is provided to electrically connect the two panels 13, the preferred ranges of the width WFRM and thickness TFRM of the frame, and the width WBRG and thickness TBRG of the bridge electrode are evaluated.

[0145] FIG. 15 This represents the relationship between the width and thickness of the frame and the reflection characteristics when the incident angle of the electromagnetic wave is 0°. The reflection characteristics are represented by the peak intensity ratio on the vertical axis. The peak intensity ratio is expressed as the ratio of the peak intensity of the scattering cross-section with the connecting part 15 to the peak intensity of the scattering cross-section of a panel without the electrical connecting part 15. An incident angle of 0° corresponds to perpendicular incidence onto the connecting part 15.

[0146] like FIG. 19 As shown, the ability to reflect incident electromagnetic waves is evaluated using the radar cross section (RCS), also known as the scattering cross section. The unit of RCS is square meters (sm). By connecting the two panels via the electrical connection 15, the peak intensity of the RCS decreases compared to a single panel. The smaller the decrease, i.e., the higher the ratio of the peak intensity of the RCS with the connection 15 to the peak intensity of the RCS without the connection 15, the better the reflection characteristics.

[0147] In the evaluation, a general-purpose three-dimensional electromagnetic field simulation software was used to reflect a 3.8 GHz plane wave and analyze the scattering cross-section.

[0148] exist FIG. 15 In (A), the frame thickness TFRM is fixed at 1 mm, while the width WFRM is varied within the range of 0~150 mm, and the peak ratio of the scattering cross-section is calculated. FIG. 15In (B), the width WFRM of the frame is fixed at 50 mm, while the thickness TFRM is varied within the range of 0 to 15 mm, and the peak intensity ratio of the scattering cross-section (hereinafter referred to as "peak ratio") is calculated. A peak ratio of 1.0 is the reflection characteristic of a panel without electrical connection 15. For reference, the peak ratio when using an aluminum frame with a thickness of 10 mm and a width of 50 mm is indicated by a dashed line.

[0149] exist FIG. 15 In (A), when the width WFRM of frame 111 is 150mm or less, the peak ratio is 0.85 or more, and when the width WFRM of frame 111 is 60mm or less, the peak ratio is 0.9 or more. Therefore, the width WFRM of frame 111 is preferably 150mm, and more preferably 20mm or more and 60mm or less.

[0150] exist FIG. 15 In (B), when the thickness TFRM of frame 111 is 15 mm or less, a higher peak ratio than that of aluminum frames is observed. When the thickness is 10 mm or less, the peak ratio is 0.9 or more, and the peak ratio becomes the largest when the thickness is 7.5 mm. Therefore, the thickness TFRM of frame 111 is preferably 15 mm or less, more preferably 10 mm or less, and even more preferably 2 mm or more and 7.5 mm or less.

[0151] FIG. 16 This illustrates the relationship between the width and thickness of the frame and its reflection characteristics when the incident angle of the electromagnetic wave is 45°. The simulation conditions, except for the incident angle, are related to... FIG. 15 Same. For reference, the peak ratio is indicated by a dashed line when using an aluminum frame with a thickness of 10mm and a width of 50mm.

[0152] When the angle of incidence is 45°, such as FIG. 16 As shown in (A), when the width of frame 111 is less than 150mm, the peak ratio is greater than 0.85, and when the width of frame 111 is less than 100mm, the peak ratio is greater than 0.9. If compared with... FIG. 15 According to the results of (A), the width WFRM of frame 111 is preferably 150mm, and more preferably 20mm or more and 60mm or less.

[0153] exist FIG. 16 In (B), a higher peak ratio than that of an aluminum frame is shown when the thickness of frame 111 is 12 mm or less. The peak ratio is above 0.9 when the thickness is 10 mm or less, and reaches its maximum at a thickness of 7.5 mm. (The last sentence appears to be incomplete and possibly refers to a different context.) FIG. 15 According to the results of (B), the thickness TFRM of frame 111 is preferably 12 mm or less, more preferably 10 mm or less, and even more preferably 2 mm or more and 7.5 mm or less.

[0154] FIG. 17 This is a graph showing the relationship between the width, thickness, and material of the bridge electrode and its reflection characteristics when the incident angle is 0°. FIG. 18 This is a graph showing the relationship between the width, thickness, and material of the bridge electrode and its reflection characteristics at an incident angle of 45°. FIG. 17 In (A), the peak ratio of the scattering cross-section is calculated while varying the width WFRM of the bridge electrode within the range of 10~100mm. FIG. 17 In (B), the peak ratio of the scattering cross-section is calculated while varying the frame thickness TFRM within the range of 1~50mm. FIG. 18 In (C), the peak ratio of the scattering cross-section is calculated while changing the material of the bridge electrode to aluminum (Al), copper (Cu), and SUS. FIG. 17 In (A) to (C), except for changing the incident angle to 45°, in order to match FIG. 17 Calculate the peak ratio under the same conditions.

[0155] according to FIG. 18 and FIG. 17 As a result, the width WBRG of the bridge electrode 112 is preferably 100 mm or less, more preferably 50 mm or less. The thickness of the bridge electrode is preferably 20 mm or less, more preferably 10 mm or less, and even more preferably 1 mm or more and 5 mm or less. As long as the material of the bridge electrode is a conductor such as Al, Cu, or SUS, the difference in material has almost no impact on the reflection characteristics.

[0156] exist FIG. 18 (B) and FIG. 20A In (B), the peak ratio increases when the thickness of the bridge electrode is particularly 40 mm, which is thought to be because the wavelength of the electromagnetic wave with a frequency of 3.8 GHz is 78.9 mm, and the thickness of the bridge electrode is equivalent to half the wavelength. Therefore, the reflected waves reinforce each other (resonance phenomenon), which increases the scattering cross-section.

[0157] FIG. 20B and FIG. 20A This is a diagram illustrating the analysis space of the reflection characteristics of Examples 1-8 and Reference Examples 1-4 described below. FIG. 20B and FIG. 20B In this design, the thickness direction of the panel is defined as the x-axis, the width direction as the y-axis, and the height direction as the z-axis. The analysis space is represented by (dimension in the x-axis) × (dimension in the y-axis) × (dimension in the z-axis). The analysis space size is 150mm × 500mm × 500mm at frequencies of 2–15 GHz. The analysis space size is 100mm × 200mm × 200mm at a frequency of 28 GHz. The analysis space is reduced at higher frequencies because the wavelength becomes shorter. FIG. 21As shown, the boundary conditions are formed by configuring electromagnetic wave absorbers around the analysis space.

[0158] FIG. 21 This is a diagram of the simulation model used in the embodiments and reference examples. Panel 13 forms a structure in which conductor 131 is sandwiched between and bonded to two dielectrics 132 and 133. The dielectrics 132 and 133 are made of 2mm thick glass or polycarbonate. The conductor 131 is made of 1mm thick SUS. The total thickness of panel 13 is 5mm. A 10mm gap is provided between the two panels 13. The structure and configuration of panel 13 are common in embodiments 1-8 and reference examples 1-4.

[0159] Example 1

[0160] exist FIG. 21 In the structure, the bridge electrode (denoted as "BRG" in the figure), which serves as the connecting part 15, uses an aluminum plate with a thickness of 1 mm and a width of 50 mm. An FRP frame with a thickness of 5 mm and a width of 50 mm is set on the outside of the aluminum plate. The radius of curvature R at the corner of the frame is 2 mm. The frequency of the incident electromagnetic wave is 3.8 GHz. An analysis space of 150 mm × 500 mm × 500 mm is set. The intensity ratio of the main peak of the scattering cross-section is calculated by varying the incident angle from 0° to 60° in 10° increments. The calculation results are shown in Table 1.

[0161]

[0162] Example 2

[0163] exist FIG. 22 In the structure, the bridge electrode BRG, which serves as the connecting part 15, uses an aluminum plate with a thickness of 1 mm and a width of 50 mm. An FRP frame with a thickness of 7.5 mm and a width of 50 mm is set on the outside of the aluminum plate. The radius of curvature R at the corner of the frame is 2 mm. The frequency of the incident electromagnetic wave is 3.8 GHz. The intensity ratio of the main peak of the scattering cross-section is calculated by varying the incident angle from 0° to 60° in 10° increments. The calculation results are shown in Table 2.

[0164]

[0165] Example 3

[0166] FIG. 23This is a simulation model of Example 3. In Example 3, CFRP, which functions as both a bridge electrode and a frame, connects the panels. The horizontal cross-section of the CFRP is H-shaped, and the gap G between the two panels is filled by the CFRP. The thickness of the CFRP on the main surface of the panel is 2 mm, the width is 50 mm, and the radius of curvature R at the corners is 1 mm. The frequency of the incident electromagnetic wave is 3.8 GHz. The intensity ratio of the main peak of the scattering cross-section is calculated by varying the incident angle from 0° to 60° in 10° increments. The calculation results are shown in Table 3.

[0167]

[0168] Example 4

[0169] FIG. 21 This is a simulation model of Example 4. In Example 4, panels 13 are connected by a double-layer structure of CFRP and FRP. The inner layer 161, which contacts panel 13, is formed of CFRP, and the outer layer 162 is formed of FRP. The inner layer 161 functions as a bridge electrode and is part of the frame. The inner layer 161, formed of CFRP, has a thickness of 1 mm and a width of 50 mm on the main surface of panel 13, and its corners are not chamfered. The outer layer 162 has an FRP thickness of 1 mm, and its corners are chamfered with a radius of curvature R of 1 mm. The frequency of the incident electromagnetic wave is 3.8 GHz. The intensity ratio of the main peak of the scattering cross-section is calculated by varying the incident angle from 0° to 60° in 10° increments. The calculation results are shown in Table 4.

[0170]

[0171] Example 5

[0172] In Example 5, FIG. 21 In the structural model, an aluminum plate with a thickness of 1 mm and a width of 50 mm was used as the bridge electrode, and a polycarbonate frame with a thickness of 7.5 mm and a width of 50 mm was arranged on the outside. The frequency of the incident electromagnetic wave was 3.8 GHz. The intensity ratio of the main peak of the scattering cross-section was calculated by varying the incident angle from 0° to 60° in 10° increments. The calculation results are shown in Table 5.

[0173]

[0174] Example 6

[0175] In Example 6, FIG. 21In the structural model, an aluminum plate with a thickness of 1 mm and a width of 50 mm was used as the bridge electrode, and a polymethyl methacrylate frame with a thickness of 7.5 mm and a width of 50 mm was arranged on the outside. The frequency of the incident electromagnetic wave was 3.8 GHz. The intensity ratio of the main peak of the scattering cross-section was calculated by varying the incident angle from 0° to 60° in 10° increments. The calculation results are shown in Table 5.

[0176]

[0177] Example 7

[0178] In Example 7, FIG. 24 In the structural model, an aluminum plate with a thickness of 1 mm and a width of 50 mm was used as the bridge electrode, and a polystyrene frame with a thickness of 7.5 mm and a width of 50 mm was arranged on the outside. The frequency of the incident electromagnetic wave was 3.8 GHz. The intensity ratio of the main peak of the scattering cross-section was calculated by varying the incident angle from 0° to 60° in 10° increments. The calculation results are shown in Table 7.

[0179]

[0180] <Reference Example 1>

[0181] FIG. 25 The simulation model of Reference Example 1 is shown below. In Reference Example 1, the panel is connected by an aluminum frame. The thickness T of the aluminum frame is 10 mm, and the width W is 50 mm. The frequency of the incident electromagnetic wave is 3.8 GHz. The intensity ratio of the main peak of the scattering cross-section is calculated by varying the incident angle from 0° to 60° in 10° increments. The calculation results are shown in Table 8.

[0182]

[0183] <Reference Example 2>

[0184] FIG. 24 The simulation model for Reference Example 2 is shown below. In Reference Example 2, the panel is connected by a machined aluminum frame. The aluminum frame has a thickness T of 20 mm and a width W of 50 mm, with cutouts in the thickness direction. The frequency of the incident electromagnetic wave is 3.8 GHz. The intensity ratio of the main peak of the scattering cross-section is calculated by varying the incident angle from 0° to 60° in 10° increments. The calculation results are shown in Table 9.

[0185]

[0186] Example 8

[0187] The panel connection structure in Example 8 is the same as in Example 1, with the incident electromagnetic wave frequency set to 28 GHz. The analysis space dimensions are set to 100 mm × 200 mm × 200 mm. A 1 mm thick, 50 mm wide aluminum plate is used as the bridge electrode, and a 5 mm thick, 50 mm wide FRP frame is placed on the outside of the aluminum plate. The radius of curvature R at the corners of the frame is 2 mm. The intensity ratio of the main peak of the scattering cross-section is calculated by varying the incident angle of the 28 GHz electromagnetic wave in 10° increments from 0° to 60°. The calculation results are shown in Table 10.

[0188]

[0189] <Reference Example 3>

[0190] In reference example 3, FIG. 25 In the structure, the thickness T of the aluminum frame is set to 8.5 mm, the width to 50 mm, and the frequency of the incident electromagnetic wave to 28 GHz. The intensity ratio of the main peak of the scattering cross-section is calculated by varying the incident angle in 10° increments from 0° to 60°. The calculation results are shown in Table 11.

[0191]

[0192] <Reference Example 4>

[0193] In reference example 4, using FIG. 20A An aluminum frame with an incident electromagnetic wave frequency of 28 GHz was used. The intensity ratio of the main peak of the scattering cross-section was calculated by varying the incident angle in 10° increments from 0° to 60°. The calculation results are shown in Table 12.

[0194]

[0195] <Reference Example 5>

[0196] In Reference Example 5, the configuration is such that neither a frame with physical support for the panels nor an electrical connection (or bridge electrode) is provided, but rather the two panels are arranged in the same YZ plane with a gap of 10mm in width (see Reference Example 5). FIG. 20A The frequency of the incident electromagnetic wave was set to 3.8 GHz, and the size of the analysis space was set to 150 mm × 500 mm × 500 mm. The intensity ratio of the main peak of the scattering cross-section was calculated by varying the incident angle from 0° to 60° in 10° increments. The calculation results are shown in Table 13.

[0197]

[0198] <Reference Example 6>

[0199] In Reference Example 6, the frame is configured without either physical support panels or electrical connections (or bridge electrodes), and instead, they are arranged within the same YZ plane with a 50mm gap between them (see Reference Example 6). FIG. 26 The frequency of the incident electromagnetic wave was set to 3.8 GHz, and the incident angle was varied in 10° increments from 0° to 60° to calculate the intensity ratio of the main peak of the scattering cross-section. The calculation results are shown in Table 14.

[0200]

[0201] FIG. 26 This diagram illustrates the presence or absence of corresponding reflective properties between the panels and the surrounding surface. The width of the gap between two panels positioned on the same plane is varied to 0mm, 10mm, 30mm, 50mm, 70mm, and 90mm. A gap width of 0mm corresponds to arranging the panels without gaps or using a single, large panel. A gap width of 10mm corresponds to Reference Example 5, and a gap width of 50mm corresponds to Reference Example 6. Example 1 uses an FRP (fiberglass reinforced plastic) frame structure to connect the two panels via bridge electrodes. Reference Example 1 uses an aluminum frame structure.

[0202] according to FIG. 27 As a result, within the range of incident angles of 0° to 50°, if the gap between the panels is 10 mm or more, the reflectivity deteriorates compared to the structure of Example 1. On the other hand, from a strength point of view, it is difficult to arrange the panels without gaps without a connecting structure. When panels are arranged independently and without gaps in a production line, only the lower end of the panel is supported. Not only in terms of independence and strength, the reflectivity also varies due to the deflection of panel 13 and its tilt relative to other panel surfaces. Manufacturing and transporting a large panel is very difficult.

[0203] Using the connection structure of the embodiment, namely the support 11 having the electrical connection portion 15, it is possible to suppress the deterioration of the reflection characteristics and to allow multiple panels to be configured independently.

[0204] FIG. 10G This illustrates an example of a method for assembling the bridge electrode and the frame. The bridge electrode and frame can be assembled using methods such as insert molding, full-surface bonding, partial bonding, and threaded fastening to form a support. Using insert molding, the frame 111 and the bridge electrode 112 can be integrally formed. As long as the reflected potential surface is continuous between adjacent panels 13, the bridge electrode 112 can be provided on at least one of the two opposing inner walls of the frame 111, which has an H-shaped horizontal cross-section.

[0205] Alternatively, the entire bridge electrode can be bonded to the frame. In use... FIG. 10GIn the case of a bridge electrode 173 with an H-shaped horizontal cross-section, it is also possible to place the electrode on the outer surface 173a of the bridge electrode 173 (refer to...). FIG. 10A-10G The adhesive 174 is applied to the entire surface of the frame 111 and adhered to the first part 111a and the second part 111b of the frame 111. When the bridge electrode 112 is disposed only on one inner wall of the frame, the bridge electrode 112 can also be joined between the first part 111c of the frame with a horizontal cross-section of T and the second part 111b of the frame with a horizontal cross-section of I using the adhesive 174.

[0206] Alternatively, the bridge electrode can be partially bonded to the frame. When using a bridge electrode 173 with an H-shaped horizontal cross-section, multiple through holes 175 can be provided along the height direction of the bridge electrode 173, and adhesive 174 can be filled into the through holes 175 to partially bond the bridge electrode 173 to the first part 111a and the second part 111b of the frame 111.

[0207] Alternatively, the first portion 111a and the second portion 111b of the frame can be threaded together using conductive screws 138. The screws 138 hold the panels between the first portion 111a and the second portion 111b of the frame, and also ensure continuity of the reflected potential surface between adjacent panels. In this case, it is preferable to irradiate electromagnetic waves onto the surface without screws.

[0208] Regardless of the method used, it is possible to manufacture a device with an electrical connection portion 15 (see reference). FIG. 28 Support 11.

[0209] <Application to Process Production Lines>

[0210] FIG. 29 This diagram illustrates the dimensions of the superreflector 102. The transmitter is designated "Tx", and the receiver is designated "Rx". The transmitter Tx is, for example, a base station BS. The receiver Rx is, for example, equipment within the production line 3. The distance from the transmitter Tx to the surface 102S of the superreflector 102 is designated d1, and the distance from the surface 102S of the superreflector 102 to the receiver Rx is designated d2.

[0211] Assuming use in a production line, the total distance D between d1 and d2 is taken as an example as 40m (D = d1 + d2 = 40m). The standard length of the production line is 80m. Assume that base stations (BSs) are placed at both ends of the production line along its length, and that the two base stations provide a standard rectangular service area, denoted as D = 40m.

[0212] The radius R of the first Fresnel zone when the radio wave emitted from transmitter Tx and reflected by super-reflector 102 arrives at receiver Rx in phase is defined by equation (1).

[0213] [Formula 1]

[0214]

[0215] Here, λ represents the wavelength used.

[0216] FIG. 5B-5D Let R be a specific example of the radius of the first Fresnel zone derived from equation (1). At an operating frequency of 28 GHz, d1 is 30 m, and d2 is 10 m, the radius R of the first Fresnel zone is 0.283 m. At the same frequency, when d1 is 35 m and d2 is 5 m, the radius R is 0.216 m.

[0217] At an operating frequency of 3.8 GHz, with d1 = 30 m and d2 = 10 m, the radius R of the first Fresnel zone is 0.770 m. At the same frequency, when d1 = 35 m and d2 = 5 m, the radius R is 0.588 m.

[0218] For equipment M configured in the production line, it is preferable to receive the reflected wave from the electromagnetic wave reflecting device 10 in phase with the direct wave from the base station BS, thereby improving the reception strength. When applying the electromagnetic wave reflecting device 10 using the superreflector 102 to the production line, considering the first Fresnel zone where in-phase reception is possible, in the 28 GHz band, the minimum size of a superreflector 102 preferably has a side length of at least 0.5 m. In the 3.8 GHz band, the minimum size of a superreflector 102 preferably has a side length of approximately 1 m. FIG. 30A As shown, when multiple super reflectors 102 are used in a panel 13, it is also preferable that the size of each super reflector 102 at least covers the first Fresnel zone.

[0219] Since the radius R of the first Fresnel zone does not depend on the relationship between the incident angle and the reflection angle, the same calculation also applies to the ordinary reflector 101. In order to keep the radio waves incident on the ordinary reflector 101 in phase and guide them toward the receiver Rx through normal reflection, the size of the ordinary reflector 101 is preferably a side length of 50 cm or more.

[0220] When the super reflector 102 is used in a process production line covered by a service area with a large aspect ratio, the oblique incidence becomes deeper in either the incident angle or the reflection angle. The following section examines the configuration relationship between the process production line 3, the base station BS, and the electromagnetic wave reflecting device 10.

[0221] <Configuration Relationships of Wireless Transmission Systems>

[0222] Reference FIG. 30B , FIG. 31A , FIG. 31B andFIG. 1 The configuration relationships of wireless transmission system 1 are explained below. (Refer to...) FIG. 2 and FIG. 30A As described, the wireless transmission system 1 includes: a base station BS that transmits and receives radio waves in the frequency band of 1 GHz to 170 GHz; a production line 3 equipped with production equipment for transmitting and receiving the aforementioned radio waves; and an electromagnetic wave reflecting device 10 disposed along at least a portion of the aforementioned production line. The electromagnetic wave reflecting device 10 has a reflecting surface 105 for reflecting radio waves in the aforementioned frequency band.

[0223] As detailed below, the base station BS is preferably located on the side of the process production line 3 closer to the extension line L horizontally parallel to the reflector surface 105. For example, the base station BS can be configured at both ends along the long side of the process production line 3. The production equipment within the process production line 3 can communicate with the base station BS directly or via the electromagnetic wave reflector 10 in the aforementioned frequency band.

[0224] FIG. 30B This indicates mode 1 of reflection in the wireless transmission system 1. In mode 1, as shown by the solid arrow, the base station BS and the production line 3 are positioned such that the radio waves emitted from the base station BS are incident at a deeper angle relative to the perpendicular of the reflecting surface 105 of the electromagnetic wave reflecting device 10 and reflected at a shallower angle. That is, in mode 1, the radio waves are incident at an angle of 45 degrees or more and reflected at a reflection angle smaller than that in normal reflection.

[0225] To ensure that radio waves from the base station BS are incident on the reflecting surface 105 at a deeper angle, the base station BS is preferably located on the side of the process production line 3 closer to the extension line L of the electromagnetic wave reflecting device 10, and at the end of the long side of the process production line 3. This allows the radio waves to be incident on the reflecting surface 105 at a deeper angle, thereby enabling the transmission of radio waves to the center of the process production line 3 or its vicinity.

[0226] FIG. 31A This represents reflection mode 2. In mode 2, the base station BS and the production line 3 are positioned such that the radio wave emitted from the base station BS is incident at a shallow angle relative to the perpendicular of the reflecting surface 105 and is reflected at an angle deeper than the angle of incidence. That is, in mode 2, the radio wave is incident at an angle of incidence of less than 45 degrees and is reflected in a manner where the reflection angle is greater than the reflection angle in a normal reflection.

[0227] In Mode 2, the base station BS is located on the side of the process production line 3, which is closer to the extension line L of the reflective surface 105 of the electromagnetic wave reflecting device 10, but closer to the center of the end of the process production line 3 in the long side direction. As explained below, in Mode 2, the effect of the deviation relative to the oblique incidence angle becomes greater.

[0228] FIG. 31B Indicates the baseline robustness of mode 1. FIG. 31A This indicates the baseline robustness of Mode 2. Baseline robustness refers to the stability of the reflection angle when the incident angle changes by 1 degree. Higher baseline robustness occurs when the change in reflection angle relative to the incident angle of 1 degree is relatively small.

[0229] exist FIG. 3B In Mode 1, the anomalous angle θabn is varied to seven different values: 20°, 25°, 30°, 35°, 40°, 45°, and 50°, to estimate the variation of the reflection angle relative to the incident angle. The variations in the reflection angle under the seven anomalous angles θabn are almost identical and overlap, thus appearing as a thicker line in the diagram.

[0230] For reference FIG. 17 As explained, in asymmetric reflection where radio waves are reflected at a different angle than the angle of incidence, the anomalous angle θabn is the difference between the reflection angle of normal reflection and the reflection angle of asymmetric reflection. Varying the anomalous angle θabn within the range of 20° to 50° is equivalent to controlling the reflection direction of asymmetric reflection within a 30-degree angular range.

[0231] Within the range of incident angles of 50° to 75° (deeper incident angles), the variation of the reflection angle relative to a 1-degree change in the incident angle is less than 1 degree, and it remains almost constant regardless of the incident angle. This indicates that at deeper incident angles, the controllability of reflection in asymmetric reflection is higher. It can be easily inferred that this represents a small variation in the reflection angle. FIG. 31B The tendency of (A) is also maintained when the angle of incidence exceeds 75° and reaches around 90°.

[0232] exist FIG. 31A In Mode 2, the anomalous angle θabn is varied to seven values: 20°, 25°, 30°, 35°, 40°, 45°, and 50°, to estimate the variation of the reflection angle relative to the incident angle. Within the incident angle range of 15° to 40° (for shallower reflections), the variation of the reflection angle relative to a 1-degree change in the incident angle varies with the incident angle and exhibits significant deviations due to different anomalous angles θabn.

[0233] When the anomalous angle θabn is small, i.e., the difference between the reflection angle and the normal reflection angle is small, the dependence of the reflection angle variation on the incident angle is relatively small. However, if the anomalous angle θabn is increased, i.e., if the reflection direction of the superreflector 102 is increased, the variation of the reflection angle relative to a 1-degree change in the incident angle becomes very large, and the amount of variation also varies greatly depending on the incident angle. Within the shallow range of incident angles of 15° to 40°, the controllability of reflection in asymmetric reflection is poor.

[0234] according to FIG. 31B and FIG. 30BWhen configuring the base station BS in the production line 3, from the viewpoint of suppressing the variation of the reflection angle related to the incident angle, it is preferable to configure the base station BS at a position where the incident angle to the reflecting surface 105 of the electromagnetic wave reflecting device 10 is 50° or more. Therefore, with FIG. 30A Compared to the configuration shown, the preferred option is to become FIG. 32 Configuration relationship.

[0235] FIG. 31A This is a diagram illustrating the quantification method for benchmark robustness. FIG. 31B and FIG. 31A The baseline robustness is estimated through the following steps. Using an incident angle θi and a reflection angle θr as input, the phase jump Φ(x) is calculated using the function f of the phase jump distribution. Here, x is the position in the x-direction on the reflecting surface. The phase jump refers to the amount of phase applied to the reflected wave to make it reflect at the desired angle. The phase jump distribution dΦ / dx is expressed as:

[0236] sinθr-sinθi=(λ / 2π)(dΦ / dx).

[0237] Here, λ is the wavelength used. If the surface impedance ZS and wave impedance η described in non-patent literature, PHYSICAL REVIEW B 94.075142 (2016), VS Asadchy, et al., “PERFECT CONTROL OF REFLECTION AND REFRACTION USINGSPATIALLY DISPERSIVE METASURFACES” are used, the function f of the phase jump distribution Φ(x) is expressed by the following formula.

[0238] [Equation 2]

[0239]

[0240] arg() is a function representing the angle of deflection on a complex number. The surface impedance Zs(x) is expressed by the following formula.

[0241] [Formula 3]

[0242]

[0243] Next, the incident angle is changed by 1 degree. The changed incident angle and reflection angle' are used as inputs. The phase jump Φ'(x) is calculated according to the phase jump distribution function f.

[0244] Find the smallest reflection angle Φ'(x) - Φ(x), and consider it as the variation of the reflection angle relative to the incident angle. FIG. 31B and FIG. 33AIt is a graph plotted by using the change in the calculated reflection angle as a function of the incident angle.

[0245] FIG. 33A This represents the phase jump change in Mode 1. The horizontal axis represents position (m), and the vertical axis represents phase (degrees). FIG. 33B In the Deep-in Shallow-out, the reflection angle θr is fixed at 30 degrees, and the incident angle θi is set to 68.5°, 70°, and 71.5°. At deeper angles of incidence, even when the incident angle is varied within a 3° range, the distribution of the phase jump does not change significantly.

[0246] FIG. 33B This represents the phase jump change in Mode 2. The horizontal axis represents position (m), and the vertical axis represents phase (degrees). FIG. 33A In the Shallow-in Deep-out method, the reflection angle θr is fixed at 60 degrees, and the incident angle θi is set to 18.5°, 20°, and 21.5°. In shallower incident angles, if... FIG. 33A Similarly, if the incident angle is varied within a range of 3°, the distribution of the phase jump will be significantly shifted depending on the incident angle.

[0247] according to FIG. 33B and FIG. 30A It can also be seen that the portion of the phase jump of the electromagnetic wave incident on the electromagnetic wave reflecting device 10 becomes uniform. FIG. 30B configuration ratio FIG. 30B More preferably. In FIG. 30A In the configuration, the base station BS is positioned such that radio waves from the base station BS are incident on the reflecting surface 105 of the electromagnetic wave reflecting device 10 at an incident angle of more than 50 degrees.

[0248] The present invention has been described above based on specific structural examples, but various modifications and substitutions can be made without departing from the scope of the invention. The superreflector 102 can also employ any structure as long as the reflection characteristics, such as the reflection phase, can be controlled; any periodic structure with frequency selectivity or wavelength selectivity can be appropriately designed. In some or all of the above structural examples, the surface of the bridge electrode can also be coated with an insulating coating.

[0249] Electromagnetic wave reflecting device 10 can, as FIG. 2 As shown, it can be arranged on one side along the long side of process production line 3, or as shown in the figure. FIG. 11AThey are arranged on both sides of the process production line 3. If the process production line 3 is curved like an L, electromagnetic wave reflecting devices 10 can be installed in various areas forming a rectangular region, or they can be installed on any main production line. In either case, the base station BS is positioned so that electromagnetic waves enter the electromagnetic wave reflection device 10 at a relatively deep angle of incidence relative to the reflecting surface 105 of the electromagnetic wave reflecting device 10.

[0250] The equipment within process production line 3 does not need to receive only reflected waves from electromagnetic wave reflecting device 10; it can also directly receive radio waves emitted from base station BS. In this case, reception diversity can also be achieved through in-phase reception. When base stations BS are configured on both sides of the long side of process production line 3, cooperative base stations can also be used.

[0251] Each electromagnetic wave reflecting device 10 can also be like FIG. 5A The panel 13 is transported with the frame 111 mounted on one side of its opposite edge and the guide beam 118 mounted on the other. In this case, on-site component installation can be omitted, thus simplifying assembly. Alternatively, it can be transported with only the frame 111 mounted on the panel 13, and assembled on-site using the guide beam 118. Furthermore, as... ​ In that way, the metasurface on the panel 13 can also be positioned at the installation site of the electromagnetic wave reflecting device 10.

[0252] The electromagnetic wave reflection device and wireless transmission system implemented in this way contribute to the realization of smart factories.

[0253] This application is based on and claims priority to Japanese Patent Application No. 2020-064577, filed on March 31, 2020, and Japanese Patent Application No. 2020-173308, filed on October 14, 2020, and includes the entire contents of the aforementioned patent applications.

[0254] Explanation of reference numerals in the attached figures

[0255] 1… Wireless transmission system; 3… Process production line; 10, 10A~10G, 10-1, 10-2… Electromagnetic wave reflection device; 11… Support body; 13, 13-1, 13-2… Panel; 15, 15A~15E… Connecting part; 16… Rod; 17, 17-1, 17-2… Edge sheath; 19… Inclined support column; 100… Electromagnetic wave reflection fence; 101… Ordinary reflector; 102… Super reflector; 105… Reflecting surface; 111, 111A~111G… Frame; 112, 112A, 112a, 112b, 114, 173… Bridge electrode; 118… Guide beam; 125… Reinforcing mechanism; 131… Conductor; 132, 133… Dielectric; BS, BS1, BS2… Base station; WT, WT1, WT2… Wireless communication unit; SY… Symmetrical reflection area; AS… Asymmetrical reflection area.

Claims

1. An electromagnetic wave reflecting device, characterized in that, have: Multiple panels, each panel having a reflective surface, the reflective surface reflecting radio waves in a desired frequency band selected from the 1 GHz to 170 GHz frequency band; and A support body, which connects to and supports the plurality of panels, The support has: A frame that connects to and supports the plurality of panels; and A connecting part is disposed on the frame to electrically connect the reflective surfaces of the plurality of panels.

2. The electromagnetic wave reflecting device according to claim 1, characterized in that, The connecting portion has a conductive material portion that electrically connects the reflective surfaces of the plurality of panels.

3. The electromagnetic wave reflecting device according to claim 1, characterized in that, The reflective surface of the panel is the surface of a conductor. The connecting portion electrically connects the conductors of the plurality of panels.

4. The electromagnetic wave reflecting device according to claim 1, characterized in that, The connecting portion has: A conductive edge sheath that holds the edges of each of the adjacent plurality of panels; and A bridge electrode that provides an electrical connection to the conductive edge sheath that holds the edges of the adjacent plurality of panels.

5. The electromagnetic wave reflecting device according to claim 1, characterized in that, The connecting portion has a conductive edge sleeve that holds the edges of each of the adjacent plurality of panels. The frame is made of conductors and electrically connected to conductive edge sheaths that hold the edges of the adjacent plurality of panels.

6. The electromagnetic wave reflecting device according to claim 1, characterized in that, The reflecting surface has a symmetrical reflecting region that reflects the incident radio wave at the same angle as the angle of incidence, and an asymmetrical reflecting region that reflects the incident radio wave at a different angle than the angle of incidence.

7. The electromagnetic wave reflecting device according to claim 6, characterized in that, The asymmetric reflection region includes a diffusion region that reflects the incident radio waves at a predetermined angle.

8. The electromagnetic wave reflecting device according to claim 6, characterized in that, The area of ​​the asymmetric reflection region at least covers the first Fresnel zone determined by the frequency of the radio wave.

9. The electromagnetic wave reflecting device according to claim 6, characterized in that, The asymmetric reflective area is mounted on a movable component that can move on the surface of the panel.

10. The electromagnetic wave reflecting device according to claim 1, characterized in that, The reflective surface has a mesh, grid, or hole arrangement of a density formed to reflect electromagnetic waves of the frequency band, wherein the average period of the mesh, grid, or hole arrangement of the density is less than 1 / 5 of the free space wavelength of the frequency band.

11. The electromagnetic wave reflecting device according to claim 1, characterized in that, At least a portion of the panel is transparent relative to visible light.

12. The electromagnetic wave reflecting device according to claim 1, characterized in that, The support has a base that allows the panel to stand upright relative to the mounting surface.

13. An electromagnetic wave reflecting fence, characterized in that, The electromagnetic wave reflecting device according to any one of claims 1 to 12 is formed by connecting the support body.

14. The electromagnetic wave reflecting fence according to claim 13, characterized in that, It further includes a reinforcing mechanism that strengthens the electrical connection of the connecting portion between adjacent electromagnetic wave reflecting devices.

15. A method for assembling an electromagnetic wave reflecting device, characterized in that, The first panel and the second panel are mechanically connected by a support structure. The first panel has a first reflective surface that reflects radio waves from a desired frequency band selected from the 1 GHz to 170 GHz frequency range, and the second panel has a second reflective surface that reflects radio waves from the same frequency band. The first reflective surface and the second reflective surface are electrically connected by an electrical connection portion provided in the support.

16. The assembly method of the electromagnetic wave reflecting device according to claim 15, characterized in that, At least one of the first panel and the second panel has a metasurface on the first reflective surface or the second reflective surface that controls the reflection characteristics. At the installation site of the electromagnetic wave reflection device, the metasurface on the panel is positioned.

Images