Terahertz non-reciprocal transmission regulator with double quasi bound state effect and method thereof

Abstract

The invention discloses a terahertz non-reciprocal transmission regulator with a double-quasi bound state effect and a method thereof, and belongs to the field of terahertz technologies and devices. The terahertz non-reciprocal transmission device with the double quasi bound state effect is formed by periodically arranging and splicing a plurality of unit structures, and each unit structure is composed of amorphous chalcogenide glass arsenic selenide with unequal rectangular grooves. According to the invention, the nonlinearity of the arsenic selenide material is combined with the asymmetry of the amorphous chalcogenide glass arsenic selenide unit with unequal grooves to generate a double quasi bound state effect, and the first quasi bound state effect and the second quasi bound state effect are utilized to realize the terahertz wave nonreciprocal transmission regulation and control of double frequency points at the same time. The terahertz non-reciprocal transmission device with the double quasi bound state effect designed by the invention is simple in structure, terahertz wave transmission can be regulated and controlled only by changing the incident power of terahertz waves without adding any external bias, and the research of an integratable non-reciprocal device is facilitated.

Description

Technical Field

[0001] This invention relates to the fields of integrated optics and terahertz technology, and in particular to a method for controlling terahertz non-reciprocal transport using a dual-quasi-bound state effect. Background Technology

[0002] Terahertz technology, also known as far-infrared waves, has been recognized as one of the "Top Ten Technologies That Will Change the Future World." Its frequency ranges from 0.1 THz to 10 THz. From an energy radiation perspective, terahertz radiation energy lies between that of electrons and photons; it is referred to as submillimeter waves in the radio field and far-infrared radiation in the optical field. Because the power intensity of terahertz sources and the detection sensitivity of terahertz receivers lag behind those of neighboring microwave and infrared bands, the development of terahertz technology has been somewhat limited, leading to this frequency band being known as the "terahertz gap" for a long time. Since the mid-1980s, with the development of ultrafast laser technology in physics, terahertz sources have become increasingly powerful, and detectors have become increasingly sensitive, enabling the rapid development and widespread application of terahertz technology. Applications of terahertz waves include radar, remote sensing, high-speed data communication and transmission, atmospheric and environmental monitoring, real-time bio-information extraction, and medical diagnosis.

[0003] Terahertz non-reciprocal devices only allow forward terahertz waves to pass through and prohibit reverse terahertz waves from passing through. They are of vital value in protecting terahertz sources, eliminating multipath interference, and suppressing redundant terahertz signals. Non-reciprocal electromagnetic devices are a key technology in modern photonics for controlling optical flow and achieving asymmetric transmission. Breaking Lorentz symmetry has become a means for scientists to achieve non-reciprocal transmission, for example, using magneto-optical materials, time-varying refractive index materials, and nonlinear materials. Among these, traditional non-reciprocal electromagnetic devices based on magneto-optical materials and time-varying refractive index materials rely on external excitation from an applied magnetic field, electric field, optical field, or heat source to achieve non-reciprocal transmission. Non-reciprocal transmission based on nonlinear materials has the characteristics of passive and unbiased operation. Its combination with metasurfaces makes it possible to realize compact and miniaturized non-reciprocal devices in free-space optical paths. However, to generate significant nonlinear effects with traditional materials, it is often necessary to use cavities with high quality factors to enhance the local field strength. Bound states in the continuous domain strongly restrict the local electromagnetic field, providing a favorable platform for realizing nonlinearly induced nonreciprocal transport in traditional materials. They also offer opportunities for miniaturized and integrated nonreciprocal devices for terahertz systems, which is of great significance. Summary of the Invention

[0004] The purpose of this invention is to overcome the shortcomings of existing technologies, such as difficulty in integration and complex structure, and to provide a method for controlling terahertz non-reciprocal transport using a dual-quasi-bound state effect.

[0005] To achieve the above objectives, the technical solution of the present invention is as follows: In a first aspect, the present invention provides a dual-quasi-bound-state effect terahertz non-reciprocal transmission modulator, which is composed of a number of amorphous chalcogenide glass arsenide units with unequal rectangular grooves on their surfaces arranged periodically; each amorphous chalcogenide glass arsenide unit is made of arsenic selenide, and a first rectangular groove and a second rectangular groove are formed at two diagonal positions on the top surface of the unit, and the first rectangular groove and the second rectangular groove have the same depth but different cross-sectional sizes; the dual-quasi-bound-state effect terahertz non-reciprocal transmission device uses the contact surface between the top surface of the unit and the air as the first port, and the contact surface between the back surface of the unit and the air as the second port.

[0006] As a preferred embodiment of the first aspect above, the height of the amorphous chalcogenide glass arsenic selenide units is 40μm~50μm and the dielectric constant is 8.18.

[0007] As a preferred embodiment of the first aspect, the first rectangular groove and the second rectangular groove of the amorphous chalcogenide glass arsenide unit are both columnar grooves with a depth of 22μm~25μm and a rectangular cross-section. The cross-sectional width of the first rectangular groove and the cross-sectional width of the second rectangular groove are equal and both are 14μm~16μm. The cross-sectional length of the first rectangular groove is 14μm~16μm, and the cross-sectional length of the second rectangular groove is 18μm~20μm.

[0008] As a preferred embodiment of the first aspect above, the out-of-plane contour of the amorphous chalcogenide glass arsenic selenide unit is square, and the unit period is 70μm~100μm.

[0009] As a preferred embodiment of the first aspect, the first and second rectangular grooves of the amorphous chalcogenide glass arsenide unit are both square prisms with a depth of 22 μm and a square cross-section. The side length of the cross-section of the first rectangular groove is 16 μm, and the side length of the cross-section of the second rectangular groove is 18 μm. The outer contour of the amorphous chalcogenide glass arsenide unit is square, and the unit period is 70 μm.

[0010] As a preferred embodiment of the first aspect above, the amorphous chalcogenide glass arsenide has a third-order nonlinear polarizability of 9.96 × 10⁻⁶. -11 m 2 / V 2 .

[0011] As a preferred embodiment of the first aspect, both the first rectangular groove and the second rectangular groove on the top of the amorphous chalcogenide glass arsenide unit are filled with air.

[0012] In a second aspect, the present invention provides a method for controlling terahertz non-reciprocal transmission using a dual-quasi-bound state effect, which is implemented by a dual-quasi-bound state effect controller for terahertz non-reciprocal transmission as described in any of the schemes in the first aspect above. This control method switches between two control modes, linear and nonlinear, by changing the intensity of the incident terahertz wave. Under linear conditions, terahertz wave transmission can be achieved from the first port to the second port and from the second port to the first port. This device structure does not produce non-reciprocal transmission of terahertz waves. Under nonlinear conditions, at the first quasi-bound state effect frequency, terahertz waves can be transmitted from the second port to the first port, but the first port to the second port isolates the terahertz waves, preventing their transmission. At the second quasi-bound state effect frequency, terahertz waves can be transmitted from the second port to the first port, but the first port to the second port isolates them, preventing their transmission. This achieves the control of non-reciprocal terahertz transmission through the dual quasi-bound state effect.

[0013] As a preferred embodiment of the second aspect above, the frequency of the first quasi-bound state effect is 2.10965 THz.

[0014] As a preferred embodiment of the second aspect, the frequency of the second quasi-bound state effect is 2.48182 THz.

[0015] Compared with the prior art, the beneficial effects of the present invention are as follows: This invention designs a terahertz non-reciprocal transmission device with a dual-quasi-bound-state effect. It utilizes the nonlinearity of arsenic selenide material combined with the asymmetry of amorphous chalcogenide glass arsenic selenide units with unequal grooves to adjust the non-reciprocal transmission intensity of terahertz waves by changing structural parameters, thus achieving control over the non-reciprocal transmission of terahertz waves. The dual-quasi-bound-state effect terahertz non-reciprocal transmission device designed in this invention has a simple structure; it only requires changing the incident power of the terahertz wave without any external bias, thus enabling the control of terahertz wave transmission and facilitating research on integrable non-reciprocal devices. Attached Figure Description

[0016] Figure 1 This is a schematic diagram of the structure for controlling terahertz non-reciprocal transport by the dual-quasi-bound state effect; Figure 2 The decomposition diagram of the scattering power in Cartesian coordinates at the first quasi-bound state effect frequency of 2.10965 THz, which modulates the terahertz non-reciprocal transport, is shown in (a) and (b) respectively. xy Magnetic field and displacement current distribution in the plane (b); Figure 3The decomposition diagram of the scattering power in Cartesian coordinates at the second quasi-bound state effect frequency of 2.48182 THz, which modulates the terahertz non-reciprocal transport, is shown in (a) and (b) respectively. x - z Magnetic field and displacement current distribution in the plane (b); Figure 4 The relationship between the terahertz wave transmission coefficient and frequency at the first quasi-bound state effect frequency of 2.10965 THz is the function of the quasi-bound state effect frequency. Figure 5 The terahertz wave transmission coefficient is a function of frequency at the second quasi-bound state effect frequency of 2.48182 THz, which is the modulation of terahertz non-reciprocal transmission by the quasi-bound state effect. Figure 6 The dual-quasi-bound-state effect modulates the non-reciprocal transmission of terahertz waves at the first quasi-bound-state effect frequency of 2.10965 THz, with the input terahertz intensity ranging from 0.01 to 2 MW / cm². 2 The relationship between the transmission terahertz spectral functions of the first port 1 and the second port 2 within the range; Figure 7 The quasi-bound state effect modulates the non-reciprocal transport of terahertz waves at the second quasi-bound state effect frequency of 2.48182 THz, with the input terahertz intensity ranging from 0.01 to 7 MW / cm². 2 The relationship between the transmission terahertz spectral functions of the first port 1 and the second port 2 within the range; Figure 8 The method for controlling terahertz non-reciprocal transmission using the dual quasi-bound state effect is the relationship between the transmitted terahertz spectrum and isolation degree at the first quasi-bound state effect and the groove depth. Figure 9 The method for controlling terahertz non-reciprocal transmission using the dual quasi-bound state effect is described. At the second quasi-bound state effect, the transmitted terahertz spectrum and isolation at the first port 1 and the second port 2 are related to the groove depth function. Detailed Implementation

[0017] To make the above-mentioned objects, features, and advantages of the present invention more apparent and understandable, the specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings. Many specific details are set forth in the following description to provide a thorough understanding of the present invention. However, the present invention can be practiced in many other ways different from those described herein, and those skilled in the art can make similar modifications without departing from the spirit of the present invention. Therefore, the present invention is not limited to the specific embodiments disclosed below. Technical features in the various embodiments of the present invention can be combined accordingly without mutual conflict.

[0018] For ease of description, the present invention defines... Figure 1 middle xy The plane represents the extension direction of the amorphous chalcogenide glass arsenide unit. x The direction is the length direction. y The direction is the width direction. z The direction is the altitude direction.

[0019] like Figure 1 As shown, in one embodiment of the present invention, a quasi-bound-state effect is provided for the modulation of terahertz non-reciprocal transmission. This quasi-bound-state effect terahertz non-reciprocal transmission device is composed of several amorphous chalcogenide glass arsenide units with unequal rectangular grooves on their dry surfaces, arranged in a periodic pattern. Each unit has the same structure and is periodically repeated on a plane to form this quasi-bound-state effect terahertz non-reciprocal transmitter. Figure 1 The diagram shows an 8×8 unit structure assembly, but the specific number of unit structures to be assembled needs to be set according to the actual device size and is not a limitation. Each amorphous chalcogenide glass arsenic selenide unit 3 has an equal height and is made of arsenic selenide. A first rectangular groove 4 and a second rectangular groove 5 are formed at two opposite corners on the top surface of the unit. The first rectangular groove 4 and the second rectangular groove 5 need to be formed along the edge of the top surface of the unit, and the depths (in the z-direction) of the first rectangular groove 4 and the second rectangular groove 5 are equal, but their cross-sectional sizes are different. Specifically, the depths (in the z-direction) and widths (in the y-direction) of the first rectangular groove 4 and the second rectangular groove 5 are equal, but their lengths (in the x-direction) are different, thus resulting in different cross-sectional sizes. The terahertz non-reciprocal transmission device with dual quasi-bound state effect uses the contact surface between the top surface of the amorphous chalcogenide glass arsenide unit 3 and the air (i.e., the top surface in the z-direction) as the first port 1, and the contact surface between the back surface of the amorphous chalcogenide glass arsenide unit 3 and the air (i.e., the bottom surface in the z-direction) as the second port 2. Terahertz waves can be input at both ports.

[0020] Furthermore, the specific selection and dimensional parameters of each structure of the aforementioned devices can be optimized according to actual performance requirements, with the final device performance meeting the usage needs as the standard. In the embodiments of the present invention, the structural parameters of the terahertz non-reciprocal transmission device with dual quasi-bound state effect are optimized as follows: The height of the amorphous chalcogenide glass arsenic selenide unit 3 is 40μm~50μm, and the dielectric constant of the material arsenic selenide is 8.18.

[0021] The first rectangular groove 4 and the second rectangular groove 5 of the amorphous chalcogenide glass arsenide unit 3 are both columnar grooves with a depth of 22μm~25μm and a rectangular cross-section. However, these two columnar grooves actually have three faces that coincide with the unit surface, so from the outside, they are actually columnar notches located at the two vertices of the cube. The cross-sectional width of the first rectangular groove 4 is... l 1 The cross-sectional width of the second rectangular groove 5 l 1 The cross-sectional length of the first rectangular groove 4 is equal to and all range from 14μm to 16μm. l 1 The cross-sectional length of the second rectangular groove 5 is 14μm~16μm. l 2 The size ranges from 18μm to 20μm.

[0022] The out-of-plane profile of the amorphous chalcogenide glass arsenide unit 3 is square, and the unit period P, i.e., the side length of the square, is 70 μm to 100 μm. The third-order nonlinear polarizability of the amorphous chalcogenide glass arsenide is 9.96 × 10⁻⁶. -11 m 2 / V 2 The first rectangular groove 4 and the second rectangular groove 5 at the top of the amorphous chalcogenide glass arsenide unit 3 are both filled with air.

[0023] Furthermore, this invention also provides a method for controlling terahertz non-reciprocal transport using the dual-quasi-bound state effect, which is based on the above. Figure 1 The dual-quasi-bound state effect shown is achieved by a terahertz non-reciprocal transmission controller. This control method switches between linear and nonlinear control modes by changing the intensity of the incident terahertz wave. Under linear conditions, terahertz wave transmission can be achieved from the first port 1 to the second port 2 and from the second port 2 to the first port 1. This device structure does not produce non-reciprocal transmission of terahertz waves. Under nonlinear conditions, at the first quasi-bound state effect frequency, terahertz waves can be transmitted from the second port 2 to the first port 1, but the first port 1 to the second port 2 isolates the terahertz waves, preventing their transmission. At the second quasi-bound state effect frequency, terahertz waves can be transmitted from the second port 2 to the first port 1, but the first port 1 to the second port 2 isolates the terahertz waves, preventing their transmission. This achieves the dual quasi-bound state effect for controlling the non-reciprocal transmission of terahertz waves.

[0024] The first and second quasi-bound state effect frequencies can be measured based on the actual device. In the embodiments of the present invention, the first quasi-bound state effect frequency is 2.10965 THz, and the second quasi-bound state effect frequency is 2.48182 THz.

[0025] This invention proposes a nonlinear and asymmetric grooved arsenic selenide square structure. By utilizing the nonlinearity of arsenic selenide combined with a high-quality factor metasurface structure, the non-reciprocal propagation function of dual-quasi-bound terahertz waves is realized. This demonstrates excellent performance in realizing the non-reciprocal propagation function of dual-quasi-bound terahertz waves without external bias, which is beneficial to the application and development of integrated devices.

[0026] The above-mentioned biquasi-bound state effect for controlling terahertz non-reciprocal transport will be applied to a specific example to demonstrate its technical effectiveness.

[0027] Example In this embodiment, the shapes of the components for the dual-quasi-bound state effect terahertz non-reciprocal transfer control are as described above; see details below. Figure 1 Further details will not be elaborated here. The specific parameters of each component in this example are as follows: The height of each amorphous chalcogenide glass arsenic selenide unit 3 is 40 μm, and the dielectric constant of the arsenic selenide material is 8.18. Both the first rectangular groove 4 and the second rectangular groove 5 are columnar grooves with a depth of 22 μm and a rectangular cross-section. The cross-sectional width of the first rectangular groove 4 is... l 1 The cross-sectional width of the second rectangular groove 5 l 1 The cross-sectional length of the first rectangular groove 4 is equal to and 16 μm. l 1 The cross-sectional length of the second rectangular groove 5 is 16 μm. l 2 The unit diameter is 18 μm. The out-of-plane profile of the amorphous chalcogenide glass arsenic selenide unit 3 is square, and the unit period P is 70 μm. The third-order nonlinear polarizability of the arsenic selenide material in the amorphous chalcogenide glass arsenic selenide unit 3 is 9.96 × 10⁻⁶. -11 m 2 / V 2Both the first rectangular groove 4 and the second rectangular groove 5 are filled with air.

[0028] This embodiment simulates the aforementioned terahertz non-reciprocal transmission device based on the dual-quasi-bound state effect to demonstrate its technical effectiveness. Theoretically, the nonlinear response of a material alters the refractive index of the structure, leading to a frequency shift. Due to the asymmetry in the excitation direction of the rectangular grooved arsenic selenide square structure with the same width but unequal length, different nonlinear shifts occur for terahertz waves originating from opposite directions, thus achieving non-reciprocal transmission of terahertz waves.

[0029] Figure 2 The diagram shows the multipole scattering power decomposition (a) and magnetic field and displacement current distribution (b) in Cartesian coordinates at the first quasi-bound state effect frequency of 2.10965 THz, which modulates terahertz non-reciprocal transport. Figure 2 In the multi-level scattering power decomposition diagram (a), it is clearly observed that the scattering power of the magnetic dipole (MD) for terahertz waves is greater than that of the electric dipole (ED), toroidal dipole (TD), electric quadrupole (EQ), and magnetic quadrupole (MQ). The scattering power of the magnetic dipole (MD) is dominant, indicating that the first quasi-bound state of this terahertz non-reciprocal device is mainly induced by the magnetic dipole (MD). Figure 2 In the magnetic field and displacement current distribution diagram in (b), it can be observed that the displacement current density forms a clockwise circulation with the beginning and end connected.

[0030] Figure 3 The diagram shows the multipole scattering power decomposition (a) and magnetic field and displacement current distribution (b) in Cartesian coordinates at the second quasi-bound state effect frequency of 2.48182 THz, which modulates terahertz non-reciprocal transport. Figure 3 In the multi-level scattering power decomposition diagram (a), it is clearly observed that the scattering power of the magnetic dipole (ED) for terahertz waves is greater than that of the magnetic dipole (MD), toroidal dipole (TD), electric quadrupole (EQ), and magnetic quadrupole (MQ). The scattering power of the electric dipole (ED) is dominant, indicating that the first quasi-bound state of this terahertz non-reciprocal device is mainly induced by the electric dipole (ED). Figure 3 In the magnetic field and displacement current distribution diagram in (b), it can be observed that the displacement current density forms a clockwise circulation in the -x direction and a counterclockwise circulation in the +x direction.

[0031] In addition, this embodiment excites each port (the first port 1 is denoted as port1, and the second port 2 is denoted as port2) under both nonlinear and linear conditions. The dual-quasi-bound state effect modulates the terahertz non-reciprocal transmission at the first quasi-bound state effect frequency of 2.10965 THz. The functional relationship between the terahertz wave transmission coefficient and the frequency is as follows: Figure 4 As shown, the dual-quasi-bound state effect modulates the terahertz non-reciprocal transmission at the second quasi-bound state effect frequency of 2.48182 THz. The functional relationship between the terahertz wave transmission coefficient and frequency is as follows: Figure 5 As shown.

[0032] Under linear conditions, the terahertz wave transmission spectra obtained from port 1 and port 2 are indistinguishable, and this structure cannot achieve non-reciprocal transmission. Under nonlinear conditions, at the first quasi-bound state effect frequency of 2.10965 THz, terahertz waves can be transmitted from the second port to the first port, while isolation is created between the first and second ports to prevent terahertz wave transmission, thus achieving the control of terahertz non-reciprocal transmission through the dual quasi-bound state effect. At the second quasi-bound state effect frequency of 2.48182 THz, terahertz waves can be transmitted from the second port to the first port, while isolation is created between the first and second ports to prevent terahertz wave transmission, thus achieving the control of terahertz non-reciprocal transmission through the dual quasi-bound state effect. By adjusting the intensity of the incident terahertz wave, the strongest non-reciprocal response of the terahertz wave obtained at the resonant frequency from both ports is achieved, thus reaching the best terahertz wave non-reciprocal transmission effect.

[0033] In this embodiment, the dual-quasi-bound-state effect terahertz non-reciprocal transmitter modulates the terahertz non-reciprocal transmission at the first quasi-bound-state effect frequency of 2.10965 THz, with the input terahertz wave intensity ranging from 0.01 to 2 MW / cm². 2 The relationship between the transmission terahertz spectral functions of the first port 1 and the second port 2 of the range is as follows: Figure 6 As shown, the dual quasi-bound state effect modulates the non-reciprocal terahertz transport at the second quasi-bound state effect frequency of 2.48182 THz, with the input terahertz wave intensity ranging from 0.01 to 7 MW / cm². 2 The relationship between the transmission terahertz spectral functions of the first port 1 and the second port 2 of the range is as follows: Figure 7 As shown. The dual-quasi-bound state effect for controlling terahertz non-reciprocal transmission, at the first quasi-bound state effect, the transmitted terahertz spectrum and isolation at the first port 1 and the second port 2 are related to the groove depth function as follows: Figure 8 As shown in (a), (b), (c), and (d), the maximum non-reciprocal transmission isolation of this device is 64.8 dB. The dual-quasi-bound state effect for modulating terahertz non-reciprocal transmission, at the second quasi-bound state effect location, shows the transmission terahertz spectrum and isolation at the first port 1 and the second port 2 as a function of the groove depth, as follows: Figure 9 As shown in (a), (b), (c) and (d), the maximum non-reciprocal transfer isolation of this device is 12.2 dB.

[0034] The dual-quasi-bound-state effect of this embodiment for terahertz non-reciprocal transmission modulator combines the nonlinearity of arsenic selenide material with the asymmetry of the amorphous chalcogenide glass arsenic selenide unit with unequal grooves to generate a dual-quasi-bound-state effect. The first and second quasi-bound-state effects are used to achieve non-reciprocal transmission modulation of terahertz waves at dual frequencies. At the first quasi-bound-state effect frequency of 2.10965 THz, the maximum non-reciprocal transmission isolation of the device is 64.8 dB. At the second quasi-bound-state effect frequency of 2.48182 THz, the maximum non-reciprocal transmission isolation of the device is 12.2 dB. The device requires no external bias conditions and has the advantages of compact structure and high isolation.

[0035] The embodiments described above are merely preferred embodiments of the present invention and are not intended to limit the invention. Those skilled in the art can make various changes and modifications without departing from the spirit and scope of the invention. Therefore, all technical solutions obtained through equivalent substitution or transformation fall within the protection scope of the present invention.

Claims

1. A terahertz non-reciprocal transmission controller based on the dual-quasi-bound state effect, characterized in that, It is composed of a number of amorphous chalcogenide glass arsenide selenide units (3) with unequal rectangular grooves on their surfaces arranged in a periodic manner; each amorphous chalcogenide glass arsenide selenide unit (3) is made of arsenic selenide, and a first rectangular groove (4) and a second rectangular groove (5) are provided at two opposite corners on the top surface of the unit, and the first rectangular groove (4) and the second rectangular groove (5) have the same depth but different cross-sectional sizes; the dual quasi-bound state effect of the terahertz non-reciprocal transmission device takes the contact surface between the top surface of the unit and the air as the first port (1) and the contact surface between the back surface of the unit and the air as the second port (2).

2. The terahertz non-reciprocal transmission controller based on the dual-quasi-bound state effect according to claim 1, characterized in that, The height of the amorphous chalcogenide glass arsenic selenide unit (3) is 40μm~50μm and the dielectric constant is 8.

18.

3. The terahertz non-reciprocal transmission controller based on the dual-quasi-bound state effect according to claim 1, characterized in that, The first rectangular groove (4) and the second rectangular groove (5) of the amorphous chalcogenide glass arsenic selenide unit (3) are both columnar grooves with a depth of 22μm~25μm and a rectangular cross-section. The cross-sectional width of the first rectangular groove (4) and the cross-sectional width of the second rectangular groove (5) are equal and both are 14μm~16μm. The cross-sectional length of the first rectangular groove (4) is 14μm~16μm and the cross-sectional length of the second rectangular groove (5) is 18μm~20μm.

4. A terahertz non-reciprocal transmission controller based on a dual-quasi-bound state effect according to claim 1, characterized in that, The outer contour of the amorphous sulfide glass arsenic selenide unit (3) is square, and the unit period is 70μm~100μm.

5. A terahertz non-reciprocal transmission controller based on a dual-quasi-bound state effect according to claim 3, characterized in that, The first rectangular groove (4) and the second rectangular groove (5) of the amorphous chalcogenide glass arsenide unit (3) are both square prisms with a depth of 22 μm and a square cross-section. The side length of the cross-section of the first rectangular groove (4) is 16 μm and the side length of the cross-section of the second rectangular groove (5) is 18 μm. The outer contour of the amorphous chalcogenide glass arsenide unit (3) is square and the unit period is 70 μm.

6. A terahertz non-reciprocal transmission controller based on a dual-quasi-bound state effect according to claim 1, characterized in that, The third-order nonlinear polarizability of the amorphous chalcogenide glass arsenide is 9.96 × 10⁻⁶. -11 m 2 / V 2 .

7. A terahertz non-reciprocal transmission controller based on a dual-quasi-bound state effect according to claim 1, characterized in that, The first rectangular groove (4) and the second rectangular groove (5) on the top of the amorphous chalcogenide glass arsenic selenide unit (3) are both filled with air.

8. A method for controlling terahertz non-reciprocal transport using the dual-quasi-bound state effect, characterized in that, The terahertz non-reciprocal transmission controller is achieved by the dual-quasi-bound state effect as described in claim 1. This control method switches between linear and nonlinear control modes by changing the intensity of the incident terahertz wave. Under linear conditions, terahertz wave transmission can be achieved from the first port (1) to the second port (2) and from the second port (2) to the first port (1). This device structure does not produce non-reciprocal transmission of terahertz waves. Under nonlinear conditions, at the first quasi-bound state effect frequency, terahertz waves can be transmitted from the second port (2) to the first port (1), but the terahertz waves are isolated from the first port (1) to the second port (2), preventing them from being transmitted. At the second quasi-bound state effect frequency, terahertz waves can be transmitted from the second port (2) to the first port (1), but the terahertz waves are isolated from the first port (1) to the second port (2), preventing them from being transmitted. Thus, the dual quasi-bound state effect is used to control the non-reciprocal transmission of terahertz waves.

9. The method for controlling terahertz non-reciprocal transport using the dual-quasi-bound state effect as described in claim 8, characterized in that, The frequency of the first quasi-bound state effect is 2.10965 THz.

10. The method for controlling terahertz non-reciprocal transport using the dual-quasi-bound state effect as described in claim 8, characterized in that, The frequency of the second quasi-bound state effect is 2.48182 THz.

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