Lithium niobate film MEMS traveling wave motor design structure and preparation method

Abstract

The invention provides a lithium niobate film MEMS traveling-wave motor design structure and a preparation method, and relates to the technical field of traveling-wave motors, and the lithium niobate film MEMS traveling-wave motor design structure comprises an upper electrode, a lower electrode, a piezoelectric driving layer and a traveling-wave micro-actuator with displacement amplification tooth structure; the upper electrode is arranged on the piezoelectric driving layer, the lower electrode is arranged under the piezoelectric driving layer, and the traveling wave micro-actuator with the displacement amplification tooth structure is arranged under the lower electrode; the piezoelectric driving layer is made of lithium niobate, the piezoelectric driving layer is divided into a plurality of driving electrode subareas, driving is achieved by applying multi-phase sine excitation signals to the piezoelectric driving layer, and one sine excitation signal is applied to each driving electrode subarea. The lithium niobate film MEMS traveling wave motor is prepared based on an LN-SOI wafer or an LN-SI wafer. The micro-motor has the advantage of improving the reliability and the output performance of the micro-motor.

Description

TECHNICAL FIELD

[0001] The application relates to the technical field of traveling wave motors, in particular to a lithium niobate thin film MEMS traveling wave motor design structure and a preparation method. BACKGROUND

[0002] The MEMS piezoelectric planar traveling wave resonator is a kind of piezoelectric resonator, which is based on a sheet-shaped piezoelectric material with small thickness and is processed through a MEMS process.

[0003] In operation, a fixed phase difference of 90° alternating signal is input to the driving electrode area at different positions on the surface, two columns of planar standing waves with a phase difference of 90° are excited, and a column of planar traveling waves can be formed by superposition. The traveling waves drive the particles on the surface to make elliptical motion, and drive the surface load through friction, thereby outputting torque to the outside, thereby realizing the driving function of the micro motor. Such devices are also called MEMS piezoelectric planar drivers. The traveling waves excited by the piezoelectric planar traveling wave resonator form a periodic distribution of protrusions on the surface, and the protrusions propagate forward in a fixed direction like waves, and drive the load to move in a certain direction through friction. The height of the protrusion is the amplitude of the traveling wave, and the periodic distribution of the protrusion is the mode of the traveling wave. When the piezoelectric planar traveling wave resonator encounters environmental changes or load changes, the mechanical stiffness of the physical structure may change, thereby changing the resonant frequency of the physical structure. If the resonant frequency of the planar traveling wave resonator changes while the frequency of the input driving signal remains unchanged, the amplitude of the excited traveling wave may decrease or the traveling wave mode may be incomplete, thereby reducing the output force, reliability and stability of the driver. At present, the polarization intensity of the piezoelectric film of the mainstream MEMS traveling wave micro motor decays for a long time, and since the sputtering method is used for growth, it can only be limited to a thickness of <5 microns, and the driving voltage and output performance are difficult to improve.

[0004] Therefore, it is urgent to optimize the structure and preparation method of the MEMS traveling wave motor to realize higher piezoelectric response, better resonant stability and stronger output performance, and improve the reliability and output performance of the micro motor. SUMMARY

[0005] The purpose of the present application is to provide a lithium niobate thin film MEMS traveling wave motor design structure and a preparation method, which can improve the reliability and output performance of the micro motor.

[0006] The present application is realized by the following technical solutions: A lithium niobate thin film MEMS traveling wave motor design structure, comprising an upper electrode, a lower electrode, a piezoelectric driving layer and a traveling wave micro actuator with displacement amplification tooth structure. The upper electrode is arranged above the piezoelectric driving layer, the lower electrode is arranged below the piezoelectric driving layer, and the row wave micro-actuator with displacement amplification tooth structure is arranged below the lower electrode. The piezoelectric driving layer is made of lithium niobate, the piezoelectric driving layer is divided into multiple driving electrode partitions, driving is realized by applying a multi-phase sinusoidal excitation signal to the piezoelectric driving layer, and each driving electrode partition is applied with a sinusoidal excitation signal. The lithium niobate thin film MEMS row wave motor is prepared based on an LN-SOI wafer or an LN-SI wafer.

[0007] Preferably, when the lithium niobate thin film MEMS row wave motor is prepared based on an LN-SOI wafer, the row wave micro-actuator with displacement amplification tooth structure comprises top silicon, bottom silicon and silicon oxide; The top silicon is arranged below the lower electrode, and the silicon oxide is arranged below the top silicon. The bottom silicon is arranged below the silicon oxide, and the bottom silicon is a tooth-shaped structure distributed along the circumference of the silicon oxide.

[0008] Preferably, when the lithium niobate thin film MEMS row wave motor is prepared based on an LN-SI wafer, the row wave micro-actuator with displacement amplification tooth structure comprises tooth-shaped silicon. The tooth-shaped silicon is a tooth-shaped structure distributed along the circumference of the lower electrode.

[0009] Preferably, the mode of the row wave micro-actuator with displacement amplification tooth structure is B03 mode, B04 mode, B05 mode or B06 mode.

[0010] Preferably, the method for applying a multi-phase sinusoidal excitation signal is as follows: The piezoelectric driving layer is circular, the piezoelectric driving layer is divided into sectors, is an integer, is the number of phases of the multi-phase sinusoidal excitation signal; The multi-phase sinusoidal excitation signal is sequentially numbered from 1 in phase order, and the sectors are sequentially numbered from 1 along the arrangement of the sectors; the first-phase sinusoidal excitation signal is applied to the sector, the second-phase sinusoidal excitation signal is applied to the sector, the third-phase sinusoidal excitation signal is applied to the sector, and .

[0011] Preferably, the multi-phase sinusoidal excitation signal is a four-phase sinusoidal excitation signal, the four-phase sinusoidal excitation signals have the same amplitude and frequency, and the phases of the first-phase sinusoidal excitation signal to the fourth-phase sinusoidal excitation signal are sequentially different by 90 degrees.

[0012] Preferably, the piezoelectric driving layer is divided into 12 sectors.

[0013] The application also provides a preparation method of a lithium niobate thin film MEMS traveling wave motor, which is used for preparing the design structure of the lithium niobate thin film MEMS traveling wave motor and comprises the following steps: A wafer is prepared, the wafer is an LN-SOI wafer or an LN-SI wafer, and the wafer comprises, from top to bottom, a first electrode layer, a lithium niobate layer, a second electrode layer and a structure layer; After performing photolithography and etching on the top of the wafer, the upper electrode is patterned, and the upper electrode is obtained; Deep silicon etching is performed on the bottom of the wafer to generate the traveling wave micro-actuator with a displacement amplification tooth structure and expose the lower electrode; The laser etching method is used to etch the lithium niobate layer to form a bare core structure release.

[0014] Preferably, when the lithium niobate thin film MEMS traveling wave motor is prepared based on an LN-SOI wafer, the preparation method comprises the following steps: An LN-SOI wafer is prepared, the LN-SOI wafer comprises, from top to bottom, a first electrode layer, a lithium niobate layer, a second electrode layer and a structure layer, and the structure layer comprises, from top to bottom, a top silicon layer, a silicon oxide layer and a bottom silicon layer; The first electrode layer is patterned and etched after photolithography to realize upper electrode patterning; Deep silicon etching is performed on the bottom silicon layer and the silicon oxide layer to form a tooth structure distributed along the periphery of the top silicon layer; Deep silicon etching is performed on the outer circle of the top silicon layer to expose the outer circle of the second electrode layer; The laser etching method is used to etch the lithium niobate layer to form a bare core structure release, the top silicon layer, the bottom silicon layer and the silicon oxide layer form the traveling wave micro-actuator with a displacement amplification tooth structure, the first electrode layer and the second electrode layer form the upper electrode and the lower electrode respectively, and the lithium niobate layer forms the piezoelectric driving layer.

[0015] Preferably, when the lithium niobate thin film MEMS traveling wave motor is prepared based on an LN-SOI wafer, the preparation method comprises the following steps: An LN-SOI wafer is prepared, the LN-SOI wafer comprises, from top to bottom, a first electrode layer, a lithium niobate layer, a second electrode layer and a structure layer, and the structure layer comprises, from top to bottom, a top silicon layer, a silicon oxide layer and a bottom silicon layer; The first electrode layer is patterned and etched after photolithography to realize upper electrode patterning; A deep silicon etching process is performed on the silicon layer to form a tooth-shaped structure distributed along the circumference of the bottom of the second electrode layer, and the part outside the tooth-shaped structure is exposed to the second electrode layer; The lithium niobate layer is etched by a laser etching method to form a bare core structure release, the silicon layer forms a displacement amplification tooth structure of the traveling wave micro-actuator, the first electrode layer and the second electrode layer form the upper electrode and the lower electrode respectively, and the lithium niobate layer forms the piezoelectric driving layer.

[0016] The technical scheme of the present application has at least the following advantages and beneficial effects: The present application adopts single crystal LN lithium niobate and SOI or SI wafer bonding to form a piezoelectric thin film wafer, and designs a MEMS traveling wave motor with LN as a core piezoelectric driving layer, which has the performance advantages of stable piezoelectric performance and large voltage and torque compared with a PZT thin film traveling wave motor; The present application does not have the problem of polarization direction decay over time, avoids the driving performance decline caused by polarization degradation, can maintain stable piezoelectric response in long-term operation, and thus improves the reliability and service life of the traveling wave motor; The present application proposes a wafer-level etching process based on laser scribing, which can realize high-precision and low-damage processing of the lithium niobate thin film structure, and improves the process controllability and device consistency; The MEMS traveling wave motor based on LN-SOI / SI designed in the present application is reasonable in design and simple in structure, can maintain stable resonant frequency and output characteristics under different environmental and load conditions, has complete traveling wave mode and high amplitude, and thus realizes long-term stable driving performance output, significantly improves the reliability and applicability of the device. BRIEF DESCRIPTION OF DRAWINGS

[0017] Figure 1 A structure schematic diagram of a lithium niobate thin film MEMS traveling wave motor prepared based on an LN-SOI wafer for the present application embodiment 1 is provided; Figure 2 A structure schematic diagram of a lithium niobate thin film MEMS traveling wave motor prepared based on an LN-SI wafer for the present application embodiment 1 is provided; Figure 3 A schematic diagram of an application case of a multiphase sinusoidal excitation signal for the present application embodiment 1 is provided; Figure 4 A preparation process schematic diagram of a lithium niobate thin film MEMS traveling wave motor prepared based on an LN-SOI wafer for the present application embodiment 2 is provided; Figure 5 A preparation process schematic diagram of a lithium niobate thin film MEMS traveling wave motor prepared based on an LN-SI wafer for the present application embodiment 2 is provided. DETAILED DESCRIPTION

[0018] In order to make the purposes, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are some but not all of the embodiments of the present application. The components of the embodiments of the present application described and shown in the drawings herein can be arranged and designed in various different configurations.

[0019] Embodiment 1 The embodiment provides a lithium niobate thin film MEMS traveling wave motor design structure, referring to Figures 1-2 , comprising an upper electrode, a lower electrode, a piezoelectric driving layer and a traveling wave micro-actuator belt displacement amplification tooth structure; The upper electrode is arranged above the piezoelectric driving layer, the lower electrode is arranged below the piezoelectric driving layer, and the traveling wave micro-actuator belt displacement amplification tooth structure is arranged below the lower electrode; The material of the piezoelectric driving layer is lithium niobate, the piezoelectric driving layer is divided into a plurality of driving electrode partitions, driving is realized by applying a multi-phase sinusoidal excitation signal to the piezoelectric driving layer, and each driving electrode partition is respectively applied with a sinusoidal excitation signal; The lithium niobate thin film MEMS traveling wave motor is prepared based on an LN-SOI wafer or based on an LN-SI wafer.

[0020] The embodiment adopts lithium niobate (LN) as the piezoelectric driving layer material, which has higher piezoelectric performance stability and lower dielectric loss, can maintain excellent driving response and energy conversion efficiency under high-frequency conditions, and thus improves the output performance of the traveling wave motor. In addition, the upper electrode and the lower electrode above and below the piezoelectric driving layer can form a vertical electric field distribution, which can fully excite the piezoelectric effect of the lithium niobate crystal, realize stable and high-amplitude vibration output, and thus enhance the driving force of the micro-actuator. The traveling wave micro-actuator belt displacement amplification tooth structure can make the vibration energy of the traveling wave motor be better output, and improve the micro-driving efficiency of the system.

[0021] On the one hand, as shown in Figure 1 , when the lithium niobate thin film MEMS traveling wave motor is prepared based on an LN-SOI wafer, the traveling wave micro-actuator belt displacement amplification tooth structure comprises top silicon, bottom silicon and silicon oxide; The top silicon is arranged below the lower electrode, and the silicon oxide is arranged below the top silicon; The bottom silicon is arranged below the silicon oxide, and the bottom silicon is a tooth-like structure distributed along the circumference of the silicon oxide.

[0022] On the other hand, as shown in Figure 2 , when the lithium niobate thin film MEMS traveling wave motor is prepared based on an LN-SI wafer, the traveling wave micro-actuator belt displacement amplification tooth structure comprises tooth-like silicon. The toothed silicon is a toothed structure distributed circumferentially along the lower electrode.

[0023] Preferably, the mode of the traveling wave micro-actuator with displacement amplification tooth structure is B03 mode, B04 mode, B05 mode, or B06 mode.

[0024] Based on the above technical solution, the method for applying the multiphase sinusoidal excitation signal is as follows: The piezoelectric driving layer is annular, and the piezoelectric driving layer is divided into... Each sector, It is an integer. The number of phases of the multiphase sinusoidal excitation signal; The multiphase sinusoidal excitation signals are numbered sequentially from 1 according to phase order, and the sectors are numbered sequentially from 1 along the sector arrangement. For the first The first phase sinusoidal excitation signal is applied to the sector, which is the first... The sector is given a second-phase sinusoidal excitation signal, which is the first... The sector is given a third-phase sinusoidal excitation signal, which is the first... A fourth-phase sinusoidal excitation signal is applied to the sector. .

[0025] Specifically, the multiphase sinusoidal excitation signal is a four-phase sinusoidal excitation signal, with the same amplitude and frequency, and the phases of the four phases differing by 90 degrees from the first to the fourth phase. As a preferred embodiment, the piezoelectric drive layer is divided into 12 sectors.

[0026] In other words, based on the four-phase sinusoidal excitation signal and 12 sectors, the distribution of the sinusoidal excitation signal can be found in [reference needed]. Figure 3 The phase angle of the first phase sinusoidal excitation signal is 0° (corresponding to sin 0° in the figure), the phase angle of the second phase sinusoidal excitation signal is 90° (corresponding to cos 90° in the figure), the phase angle of the third phase sinusoidal excitation signal is 180° (corresponding to -sin180° in the figure), and the phase angle of the fourth phase sinusoidal excitation signal is 270° (corresponding to -cos 270° in the figure). According to the above allocation method, the first phase sinusoidal excitation signal is applied to the first, fifth, and ninth sectors; the second phase sinusoidal excitation signal is applied to the second, sixth, and tenth sectors; the third phase sinusoidal excitation signal is applied to the third, seventh, and eleventh sectors; and the fourth phase sinusoidal excitation signal is applied to the fourth, eighth, and twelfth sectors.

[0027] The principle behind applying the sinusoidal excitation signal is that two standing waves of the same frequency and amplitude form a fixed phase difference in space. The surface particles are excited by the superposition of the out-of-plane perpendicular vibrations of the two standing waves, resulting in elliptical motion. This creates in-plane displacement, which in turn generates sliding friction with the rotor, thus creating a driving effect. ; In the formula, This represents the displacement response of the stator. The response amplitude of the standing wave excitation, Let be the displacement distribution function perpendicular to the mid-surface along the radial direction. Let be the displacement distribution function along the circumferential direction. is the frequency of the standing wave response.

[0028] Example 2 This embodiment provides a method for fabricating a lithium niobate thin-film MEMS traveling-wave motor, used to fabricate the aforementioned lithium niobate thin-film MEMS traveling-wave motor design structure, including the following steps: Prepare a wafer, which is an LN-SOI wafer or an LN-SI wafer. From top to bottom, the wafer consists of a first electrode layer, a lithium niobate layer, a second electrode layer, and a structural layer. Patterning is performed on the top of the wafer, followed by etching to pattern the top electrode and obtain the top electrode. A deep silicon etching process is performed on the bottom of the wafer to generate the traveling wave micro actuator with displacement amplification teeth structure and expose the lower electrode; The lithium niobate layer was etched using laser etching to form a bare core structure for release.

[0029] A MEMS traveling wave motor is designed using a single-crystal lithium niobate (LN) wafer bonded to SOI or SI wafers to form a piezoelectric thin film wafer. LN serves as the core piezoelectric driving layer. Addressing the challenge of dry or wet etching of thick LN films using MEMS processes, a laser scribing wafer-level etching process is proposed. Generally, thick LN wafers can be patterned using precision machining, but this method suffers from low precision and high manufacturing costs. The method described in this embodiment offers high precision and cost savings, providing excellent cost-effectiveness.

[0030] On the one hand, when the lithium niobate thin-film MEMS traveling wave motor is fabricated based on an LN-SOI wafer, refer to... Figure 4 The preparation method includes the following steps: Prepare an LN-SOI wafer, wherein the LN-SOI wafer comprises, from top to bottom, a first electrode layer, a lithium niobate layer, a second electrode layer and a structural layer, and the structural layer comprises, from top to bottom, a top silicon layer, a silicon oxide layer and a bottom silicon layer; Patterning of the first electrode layer is achieved by photolithography followed by etching, thus realizing the patterning of the upper electrode. Deep silicon etching is performed on the bottom silicon layer and silicon oxide layer to form a tooth-like structure distributed circumferentially along the bottom of the top silicon layer; A deep silicon etching process is performed on the outer ring of the top silicon layer to expose the outer ring of the second electrode layer; The process involves laser scribing, specifically laser etching of the lithium niobate layer to form a bare core structure. The top silicon layer, bottom silicon layer, and silicon oxide layer form the traveling wave micro-actuator with displacement amplification teeth. The first electrode layer and the second electrode layer form the upper electrode and the lower electrode, respectively. The lithium niobate layer forms the piezoelectric drive layer.

[0031] On the other hand, when the lithium niobate thin-film MEMS traveling wave motor is fabricated based on an LN-SI wafer, see [reference needed]. Figure 5 The preparation method includes the following steps: Prepare an LN-SI wafer, wherein the LN-SI wafer consists of a first electrode layer, a lithium niobate layer, a second electrode layer, and a structural layer from top to bottom, and the structural layer is a silicon layer; Patterning of the first electrode layer is achieved by photolithography followed by etching, thus realizing the patterning of the upper electrode. A deep silicon etching process is performed on the silicon layer to form a tooth-like structure distributed circumferentially along the bottom of the second electrode layer, with the portion outside the tooth-like structure exposing the second electrode layer. The process involves laser scribing, etching the lithium niobate layer to form a bare core structure, releasing the silicon layer to form the traveling wave micro-actuator with displacement amplification teeth, forming the upper and lower electrodes respectively with the first and second electrode layers, and forming the piezoelectric drive layer with the lithium niobate layer.

[0032] The above are merely preferred embodiments of the present invention and are not intended to limit the present invention. Various modifications and variations can be made to the present invention by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.

Claims

1. A lithium niobate thin-film MEMS traveling wave motor design structure, characterized in that, It includes an upper electrode, a lower electrode, a piezoelectric drive layer, and a traveling wave micro-actuator with displacement amplification teeth; The upper electrode is positioned above the piezoelectric driving layer, the lower electrode is positioned below the piezoelectric driving layer, and the traveling wave micro actuator with displacement amplification tooth structure is positioned below the lower electrode. The piezoelectric driving layer is made of lithium niobate. The piezoelectric driving layer is divided into multiple driving electrode partitions. Driving is achieved by applying a multiphase sinusoidal excitation signal to the piezoelectric driving layer, and each driving electrode partition is applied with a sinusoidal excitation signal. The lithium niobate thin-film MEMS traveling wave motor is fabricated based on LN-SOI wafers or LN-SI wafers.

2. The lithium niobate thin-film MEMS traveling wave motor design structure according to claim 1, characterized in that, When the lithium niobate thin film MEMS traveling wave motor is fabricated based on LN-SOI wafer, the traveling wave micro actuator with displacement amplification tooth structure includes top silicon, bottom silicon and silicon oxide. The top silicon is disposed below the bottom electrode, and the silicon oxide is disposed below the top silicon; The substrate silicon is disposed below the silicon oxide, and the substrate silicon has a toothed structure distributed circumferentially along the silicon oxide.

3. The lithium niobate thin-film MEMS traveling wave motor design structure according to claim 1, characterized in that, When the lithium niobate thin film MEMS traveling wave motor is fabricated based on LN-SI wafer, the traveling wave micro actuator with displacement amplification tooth structure includes toothed silicon. The toothed silicon is a toothed structure distributed circumferentially along the lower electrode.

4. The lithium niobate thin-film MEMS traveling wave motor design structure according to claim 1, characterized in that, The traveling wave micro-actuator with displacement amplification tooth structure has modes B03, B04, B05, or B06.

5. The lithium niobate thin-film MEMS traveling wave motor design structure according to claim 1, characterized in that, The method for applying the multiphase sinusoidal excitation signal is as follows: The piezoelectric driving layer is annular, and the piezoelectric driving layer is divided into... Each sector, It is an integer. The number of phases of the multiphase sinusoidal excitation signal; The multiphase sinusoidal excitation signals are numbered sequentially from 1 according to phase order, and the sectors are numbered sequentially from 1 along the sector arrangement. For the first The first phase sinusoidal excitation signal is applied to the sector, which is the first... The sector is given a second-phase sinusoidal excitation signal, which is the first... The sector is given a third-phase sinusoidal excitation signal, which is the first... A fourth-phase sinusoidal excitation signal is applied to the sector. .

6. The lithium niobate thin-film MEMS traveling wave motor design structure according to claim 5, characterized in that, The multiphase sinusoidal excitation signal is a four-phase sinusoidal excitation signal. The amplitude and frequency of the four-phase sinusoidal excitation signals are the same, and the phases of the first-phase sinusoidal excitation signal to the fourth-phase sinusoidal excitation signal are successively 90 degrees apart.

7. The lithium niobate thin-film MEMS traveling wave motor design structure according to claim 6, characterized in that, The piezoelectric drive layer is divided into 12 sectors.

8. A method for fabricating a lithium niobate thin-film MEMS traveling-wave motor, used to fabricate a lithium niobate thin-film MEMS traveling-wave motor design structure as described in any one of claims 1 to 7, characterized in that, Includes the following steps: Prepare a wafer, which is an LN-SOI wafer or an LN-SI wafer. From top to bottom, the wafer consists of a first electrode layer, a lithium niobate layer, a second electrode layer, and a structural layer. Patterning is performed on the top of the wafer, followed by etching to pattern the top electrode and obtain the top electrode. A deep silicon etching process is performed on the bottom of the wafer to generate the traveling wave micro actuator with displacement amplification teeth structure and expose the lower electrode; The lithium niobate layer was etched using laser etching to form a bare core structure for release.

9. The method for fabricating a lithium niobate thin-film MEMS traveling wave motor according to claim 8, characterized in that, When the lithium niobate thin-film MEMS traveling wave motor is fabricated based on an LN-SOI wafer, the fabrication method includes the following steps: Prepare an LN-SOI wafer, wherein the LN-SOI wafer comprises, from top to bottom, a first electrode layer, a lithium niobate layer, a second electrode layer and a structural layer, and the structural layer comprises, from top to bottom, a top silicon layer, a silicon oxide layer and a bottom silicon layer; Patterning of the first electrode layer is achieved by photolithography followed by etching, thus realizing the patterning of the upper electrode. Deep silicon etching is performed on the bottom silicon layer and silicon oxide layer to form a tooth-like structure distributed circumferentially along the bottom of the top silicon layer; A deep silicon etching process is performed on the outer ring of the top silicon layer to expose the outer ring of the second electrode layer; The lithium niobate layer is etched using laser etching to form a bare core structure. The top silicon layer, bottom silicon layer, and silicon oxide layer form the traveling wave micro actuator with displacement amplification tooth structure. The first electrode layer and the second electrode layer form the upper electrode and the lower electrode, respectively. The lithium niobate layer forms the piezoelectric drive layer.

10. A method for fabricating a lithium niobate thin-film MEMS traveling wave motor according to claim 8, characterized in that, When the lithium niobate thin-film MEMS traveling wave motor is fabricated based on an LN-SI wafer, the fabrication method includes the following steps: Prepare an LN-SI wafer, wherein the LN-SI wafer consists of a first electrode layer, a lithium niobate layer, a second electrode layer, and a structural layer from top to bottom, and the structural layer is a silicon layer; Patterning of the first electrode layer is achieved by photolithography followed by etching, thus realizing the patterning of the upper electrode. A deep silicon etching process is performed on the silicon layer to form a tooth-like structure distributed circumferentially along the bottom of the second electrode layer, with the portion outside the tooth-like structure exposing the second electrode layer. The lithium niobate layer is etched using laser etching to form a bare core structure. The silicon layer forms the traveling wave micro-actuator with displacement amplification teeth structure. The first electrode layer and the second electrode layer form the upper electrode and the lower electrode, respectively. The lithium niobate layer forms the piezoelectric drive layer.

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