Probe device and manufacturing method thereof

Abstract

A probe device that measures and inspects electrical characteristics of a package substrate by coming into contact with an electrode formed on the surface of a substrate to be measured such as the package substrate, the probe device being characterized by being provided with: a probe device substrate having a flat surface; a plurality of wiring patterns disposed on the flat surface, the plurality of wiring patterns being disposed on the flat surface; and a probe which is formed in a protruding manner at a predetermined position of the wiring pattern.

Description

Technical Field

[0001] The present invention relates to a probe device and a method thereof for manufacturing the same, which are capable of performing electrical measurements and electrical inspections of a substrate by contacting electrodes formed on the surface of the substrate being inspected. Background Technology

[0002] A flip-chip package (semiconductor package) utilizing flip-chip technology has been developed. The flip-chip package includes a semiconductor chip and a package substrate for mounting the semiconductor chip. Multiple electrode pads are formed on the surface of the package substrate. Solder bumps are formed on each electrode pad. The solder bumps serve as connections to the semiconductor chip and are formed, for example, on the metal layer of the electrode pads using plating techniques.

[0003] To measure and inspect the electrical characteristics of such packaged substrates, a probe device equipped with multiple probes is used. In such a probe device, even if there is a deviation in the height of the solder bumps, multiple probes are required to contact the solder bumps simultaneously. As a conventional probe device, there is a known probe device that has a mechanical structure with a spring coil applied in a two-dimensional arrangement to allow the tip of the probe to move forward and backward (extend / retract) (see, for example, Patent Document 1). In this conventional probe device, the electrical characteristics of the substrate being measured are measured using a four-terminal inspection method. As other probes, probes manufactured using MEMS (Micro Electro Mechanical Systems) technology that have multiple cantilever structures arranged in a two-dimensional configuration are known.

[0004] Prior art literature

[0005] Patent documents

[0006] Patent Document 1: Japanese Patent Application Publication No. 2005-315775 Summary of the Invention

[0007] The problem the invention aims to solve

[0008] In recent years, semiconductor chips have become increasingly highly integrated due to advancements in manufacturing processes. Consequently, the number of electrode pads with solder bumps formed on the surface of the packaging substrate used to mount these semiconductor chips has increased, leading to further miniaturization and narrowing of the electrode pads. However, probes with mechanical structures such as spring coils or probes fabricated using MEMS technology are difficult to integrate and configure in a two-dimensional manner opposite to the increasingly miniaturized and narrow-pitched electrode pads on the surface of the packaging substrate.

[0009] The present invention addresses the aforementioned issues and aims to provide a probe device and a method thereof capable of reliable measurement and inspection in the face of miniaturization and narrow pitch.

[0010] Solution for solving the problem

[0011] To address the aforementioned issues, the present invention relates to a probe device, characterized in that it comprises: a probe device substrate having a flat surface; a plurality of wiring patterns disposed on the flat surface; and a probe protrudingly formed at a predetermined position on the wiring patterns.

[0012] As a preferred embodiment, an elastic material layer is preferably sandwiched between the probe device substrate and the wiring pattern.

[0013] As a preferred embodiment, the probe has a recess in the center of its front end face.

[0014] As a preferred embodiment of the above scheme, the probe is preferably formed of a nickel-cobalt alloy.

[0015] As a preferred embodiment of the above-mentioned solution, the probe device substrate is preferably made of glass.

[0016] As a preferred embodiment, the wiring pattern is preferably formed on the elastic material layer, and the probe is disposed on the electrode pad portion of the wiring pattern.

[0017] As a preferred embodiment of the above scheme, the wiring pattern and the probe are preferably made of different materials.

[0018] As a preferred embodiment, the elastic material layer and the wiring pattern extend from the periphery of the probe device substrate to the back surface of the probe device substrate.

[0019] As a preferred embodiment, the elastic material layer and the wiring pattern are preferably folded back towards the back side of the probe device substrate when only the probe device substrate is partially cut off or removed.

[0020] As a preferred embodiment, the entire surface of the probe device substrate is covered by an insulating film, with only the probe protruding through the insulating film.

[0021] As a preferred embodiment, at least a portion of the side of the probe contacts the wiring pattern via one or more curved surfaces.

[0022] As a preferred embodiment, at least a portion of the side of the probe contacts the wiring pattern through two or more planes.

[0023] As described above, it is preferable that the electrode pad portion in the wiring pattern has an opening, the probe is composed of a filling portion and a protrusion, the filling portion tightly fills the opening and is electrically connected to the electrode pad portion, the protrusion protrudes above the electrode pad portion, and the filling portion contacts the wiring pattern through one or more curved surfaces.

[0024] As described above, it is preferable that the electrode pad portion in the wiring pattern has an opening, the probe is composed of a filling portion and a protrusion, the filling portion tightly fills the opening and is electrically connected to the electrode pad portion, the protrusion protrudes above the electrode pad portion, and the filling portion contacts the wiring pattern through two or more planes.

[0025] As a preferred embodiment, the opening diameter of the opening gradually increases toward the probe device substrate side, and the inner wall of the opening is formed into an inverted cone shape.

[0026] As an alternative to the above, the protrusion is preferably composed of a columnar protrusion having a diameter that is longer than the diameter of the opening, such that it at least covers the top of the opening.

[0027] Another aspect of the present invention relates to a method for manufacturing a probe device, characterized by comprising: an elastic material layer forming step, wherein an elastic material layer is formed on the surface of a probe device substrate having a flat surface; a seed layer forming step, wherein a seed layer is formed on the elastic material layer; a wiring pattern forming step, wherein a wiring pattern is patterned on the seed layer; and a probe forming step, wherein the probe is formed on an electrode pad portion in the wiring pattern.

[0028] As a preferred embodiment of the above-mentioned solution, the elastic material layer is preferably formed from polyimide.

[0029] As described above, it is preferable that during the probe forming process, the probe is electroformed in such a way that it protrudes from the seed layer toward the top of the electrode pad, and a recess is formed in the center of the front end face of the probe.

[0030] As a preferred embodiment of the above scheme, the electrode pad portion and the probe are preferably formed of a nickel-cobalt alloy.

[0031] As described above, it is preferable that in the wiring pattern forming process, the wiring pattern is patterned such that an opening is formed in the center of the electrode pad portion in the wiring pattern; in the probe forming process, the probe is electroformed such that it fills the opening from the seed layer and protrudes upward toward the electrode pad portion; and the pattern is patterned such that the diameter of the portion of the probe protruding upward toward the electrode pad portion is longer than the diameter of the opening.

[0032] Invention Effects

[0033] The probe device and its manufacturing method according to the present invention have the effect of being able to reliably measure and inspect when miniaturization and narrow spacing are achieved. Attached Figure Description

[0034] Figure 1 This is a cross-sectional view showing a simplified structure of the probe device according to the first embodiment of the present invention.

[0035] Figure 2 This is a top view illustrating the state of the probe device of the first embodiment of the present invention during manufacturing.

[0036] Figure 3 This is a cross-sectional view illustrating the state of the probe device according to the first embodiment of the present invention during manufacturing.

[0037] Figure 4 This is a partial cross-sectional perspective view showing the main parts of the probe device according to the first embodiment of the present invention.

[0038] Figure 5 This is a cross-sectional view showing the main parts of the probe device according to the first embodiment of the invention.

[0039] Figure 6 This is a top view illustration of the substrate being measured.

[0040] Figure 7 yes Figure 6 Sectional view VII-VII.

[0041] Figure 8 This is a partial cross-sectional view illustrating the state of performing electrical inspection on a substrate under test using the probe apparatus of the first embodiment of the present invention.

[0042] Figure 9-1 This is a process cross-sectional view showing the elastic material layer formation process in the manufacturing method of the probe device according to the first embodiment of the present invention.

[0043] Figure 9-2 This is a process cross-sectional view showing the seed layer formation step in the manufacturing method of the probe device according to the first embodiment of the present invention.

[0044] Figure 9-3 This is a process cross-sectional view showing the exposure step of the photoresist for forming wiring patterns in the manufacturing method of the probe device according to the first embodiment of the present invention.

[0045] Figure 10-1This is a process cross-sectional view showing the patterning process (after development) of photoresist for forming wiring patterns in the manufacturing method of the probe device according to the first embodiment of the present invention.

[0046] Figure 10-2 This is a process cross-sectional view showing the wiring pattern forming step (first electroforming process) in the manufacturing method of the probe device according to the first embodiment of the present invention.

[0047] Figure 10-3 This is a process cross-sectional view showing the probe forming step (patterning step of photoresist for second electroforming) in the manufacturing method of the probe device according to the first embodiment of the present invention.

[0048] Figure 11-1 This is a process cross-sectional view showing the probe forming step (second electroforming process) in the manufacturing method of the probe device according to the first embodiment of the present invention.

[0049] Figure 11-2 This is a process cross-sectional view showing the probe forming step (photoresist removal step) in the manufacturing method of the probe device according to the first embodiment of the present invention.

[0050] Figure 11-3 This is a process cross-sectional view showing the insulating film formation step in the manufacturing method of the probe device according to the first embodiment of the present invention.

[0051] Figure 12-1 This is a process cross-sectional view showing the state before the folding-back process in the manufacturing method of the probe device according to the first embodiment of the present invention.

[0052] Figure 12-2 This is a process cross-sectional view showing the process of peeling the interface between the glass substrate and the elastic material layer by laser irradiation of the folded portion from the glass substrate side in the manufacturing method of the probe device according to the first embodiment of the present invention.

[0053] Figure 12-3 This is a process cross-sectional view showing the state after the glass substrate of the folded-back portion has been removed in the manufacturing method of the probe device according to the first embodiment of the present invention.

[0054] Figure 13 This is a cross-sectional view illustrating the simplified structure of the probe device according to the second embodiment of the present invention.

[0055] Figure 14 This is a cross-sectional explanatory diagram showing the measurement state of the probe device according to the third embodiment of the present invention.

[0056] Figure 15 This is a partial cross-sectional view illustrating the other bump structures on the substrate being measured.

[0057] Figure 16 This is a partial cross-sectional view illustrating the main parts of the probe device according to the fourth embodiment of the present invention.

[0058] Figure 17-1 This is a process cross-sectional view showing the elastic material layer formation process and the wiring layer formation process in the manufacturing method of the probe device according to the fourth embodiment of the present invention.

[0059] Figure 17-2 This is a process cross-sectional view showing the state after the wire layer formation process in the manufacturing method of the probe device according to the fourth embodiment of the present invention, where the resist has been removed.

[0060] Figure 17-3 This is a process cross-sectional view showing the state in the manufacturing method of the probe device according to the fourth embodiment of the present invention, where a resist is applied to the entire surface after the wiring layer is formed.

[0061] Figure 18-1 This is a cross-sectional view showing the process of back-side exposure of a probe device in the fourth embodiment of the present invention, in which a wiring layer is used as a mask to resist the photoresist.

[0062] Figure 18-2 This is a process cross-sectional view showing the state after developing the photoresist for probe formation in the manufacturing method of the probe device according to the fourth embodiment of the present invention.

[0063] Figure 19-1 This is a process cross-sectional view showing the state in which the probe is formed by electroforming in the manufacturing method of the probe device according to the fourth embodiment of the present invention.

[0064] Figure 19-2 This is a process cross-sectional view showing the process of patterning the wiring layer after forming the probe in the manufacturing method of the probe device according to the fourth embodiment of the present invention.

[0065] Figure 20 This is a process cross-sectional view showing another exposure method for photoresist used in the electroforming process of the probe device in the fourth embodiment of the present invention.

[0066] Figure 21 This is a partial cross-sectional view illustrating the probe device according to the fifth embodiment of the present invention.

[0067] Figure 22 This is a partial cross-sectional view illustrating the probe device according to the sixth embodiment of the present invention.

[0068] Figure 23 This is a partial cross-sectional view illustrating the probe device according to the seventh embodiment of the present invention.

[0069] Figure 24This is a perspective view showing a modified example of the probe device according to the first embodiment of the present invention.

[0070] Figure 25 The modified example of the probe device according to the first embodiment of the present invention is shown in a perspective view of the electrode pad portion with the probe removed. Detailed Implementation

[0071] Hereinafter, details of the probe device and its manufacturing method according to embodiments of the present invention will be described based on the accompanying drawings. However, it should be noted that the drawings are schematic, and the number of components, dimensions, proportions, shapes, etc., may sometimes differ from reality. Furthermore, the drawings also include portions that differ in dimensional relationships, proportions, and shapes from each other.

[0072] In this embodiment, the substrate to be measured can be any type of substrate, such as a packaging substrate with multiple bumps on its surface or back, a printed wiring substrate, a flexible substrate, a multilayer wiring substrate, an electrode plate for a liquid crystal display or an organic EL display, or a thin film carrier. Furthermore, the probe device of this embodiment can also be used to measure the electrical characteristics of semiconductor devices known as wafers or LSI chips.

[0073] [First Embodiment] (Brief Structure of the Probe Device)

[0074] use Figures 1-8 The structure, measurement method, function, and effects of the probe device 20 according to the first embodiment of the present invention will be described.

[0075] like Figures 1-3 As shown, the probe device 20 of this embodiment includes a glass substrate 1 serving as the probe device substrate, an elastic material layer 2, a seed layer 3, a wiring pattern 4, a probe 5, and an insulating film 17 (see reference). Figure 11-3 It should be noted that... Figure 1 This shows the state of the probe device 20 after completion. Figure 2 and Figure 3 This shows the state after the glass substrate 1 has been unfolded.

[0076] The glass substrate 1 has a rectangular substrate body 1A and a pair of folded-back portions 1B. The outline of the substrate body 1A determines the outline of the probe device 20 when viewed from above. The folded-back portions 1B are elongated rectangular shapes with the same width as the substrate body 1A, and are fixed by overlapping with the back side of both sides of the substrate body 1A.

[0077] As the material for the glass substrate, materials with excellent flatness and durability are preferred, such as tempered glass used in display devices for electronic devices.

[0078] like Figure 1As shown, in the structure consisting of a substrate body 1A and a pair of folded-back portions 1B, the elastic material layer 2 is configured to extend from the lower surface of one folded-back portion 1B through the surface of the substrate body 1A to the lower surface of the other folded-back portion 1B. It should be noted that in this embodiment, the cut surfaces 1c at both ends of the substrate body 1A and the outer cut surfaces 1c of the folded-back portions 1B are arranged coplanarly. It should also be noted that while this embodiment uses a structure consisting of a substrate body 1A and a pair of folded-back portions 1B, any structure that allows the wiring pattern 4 (backside electrode pad portion 4B) to wrap back to the side opposite to the probe 5 in the probe device 20 via the flexible elastic material layer 2 is not required to be the structure described above.

[0079] The elastic material layer 2 is made of polyimide. The thickness of the elastic material layer 2 can be set to, for example, 3.0 to 50.0 μm. In this embodiment, the thickness of the elastic material layer 2 is set to 5 μm. The elastic material layer 2 made of polyimide has cushioning and flexibility. A seed layer 3, for example made of nickel or a nickel alloy, with a thickness of about 50 to 500 nm, is formed on the elastic material layer 2. Methods for forming the seed layer 3 include sputtering, vapor deposition, and electroless plating. Other materials besides polyimide include polyamide, polyester, polyethylene, polyvinyl alcohol, polypropylene, polycarbonate, and polystyrene.

[0080] like Figure 2 As shown, in the rectangular area at the center of the substrate body 1A, multiple probes 5 are arranged to stand upright with a narrow spacing. Figure 4 As shown, each probe 5 is disposed on the electrode pad portion (the circular end in top view) 4A of an independent wiring pattern 4. The height of the probe 5 is set to be less than 50 μm. Furthermore, in this embodiment, the diameter of the probe 5 is 10 μm. Figure 4 As shown, the spacing between the paired probes 5 is set to be less than the height of the probes 5. In this embodiment, the height of the probes 5 is set to 15 μm, and the spacing between the paired probes 5 is set to 15 μm. It should be noted that... Figure 4 The distance (gap size) between the paired probes 5 shown is set to 5 μm. This dimensional setting ensures the strength of the probes 5. Specifically, in this embodiment, an insulating film 17 with a thickness of, for example, 13 μm is formed at least in the area where the probes 5 are located (see reference). Figure 11-3 This increases the strength of the measuring surface side of the probe device 20. By forming such an insulating film 17, the exposed height of the probe 5 is set to 7 μm.

[0081] Furthermore, the seed layer 3 of the substrate is also formed with the same outline as the wiring pattern 4. In this embodiment, the wiring pattern 4 and the probe 5 are formed of a nickel-cobalt (Ni-Co) alloy. In this embodiment, the thickness of the wiring pattern 4 and the electrode pad portion 4A is set to 5 μm. Furthermore, the Vickers hardness of the wiring pattern 4 is set to 250–550 Hv, and the Vickers hardness of the probe 5 is also set to 250–550 Hv. Besides nickel-cobalt alloys, other materials for the wiring pattern include copper (Cu), chromium (Cr), tin (Sn), nickel (Ni), palladium (Pd), and nickel-phosphorus (Ni-P). Regarding the Vickers hardness of each material, copper is known to be 40–85 Hv, chromium 800–1000 Hv, nickel 100–350 Hv, tin 3–60 Hv, palladium 300–500 Hv, and nickel-phosphorus 450–1000 Hv; the appropriate material can be selected based on the required hardness and resistivity. It should be noted that the Vickers hardness of probe 5 is preferably higher than that of wiring pattern 4. Additionally, the resistance of wiring pattern 4 is preferably lower than that of probe 5.

[0082] like Figures 1-4 As shown, multiple wiring patterns 4 are independently led out from the electrode pad portions 4A disposed in the central region of the substrate body 1A (seed layer 3) and extended to the surface region of the fold-back portion 1B on both sides of the substrate body 1A. The end of the wiring pattern 4 located on the fold-back portion 1B is the back side electrode pad portion 4B.

[0083] (Probe fixation structure)

[0084] like Figure 5 As shown, a through-circular opening 4C is formed in the center of the electrode pad portion 4A in the wiring pattern 4. The seed layer 3 faces the substrate deep inside the opening 4C. A filling portion 5B for the probe 5 is formed in a tightly penetrating manner within the opening 4C.

[0085] The portion above the filling portion 5B in probe 5 forms a cylindrical protrusion 5A.

[0086] The protrusion 5A is configured to have a diameter that is longer than the diameter of the opening 4C, such that it at least covers the top of the opening 4C.

[0087] The probe 5, penetrating the electrode pad portion 4A described above, is securely fixed to the upper surface of the electrode pad portion 4A, the inner surface of the opening 4C, and the wide bonding surface of the seed layer 3. More specifically, as... Figure 5As shown, the filling portion 5B of probe 5 is joined to the inner peripheral surface (curved surface) 4C1 of the opening 4C of electrode pad portion 4A in wiring pattern 4. Furthermore, the upper surface (flat surface) 4A1 surrounding the upper end of the opening 4C in electrode pad portion 4A is joined to the flange surface (the annular flat area at the lower end) 5A1 of the protrusion 5A in probe 5. In this embodiment, the inner peripheral surface 4C1 of the opening 4C is formed by a continuous curved surface surrounding the entire circumference of the filling portion 5B of probe 5. Additionally, the lower end surface 5B2 of the filling portion 5B of probe 5 is joined to the upper surface of the seed layer 3 within the opening 4C. It should be noted that in this embodiment, the top view of the opening 4C is circular, and the inner peripheral surface 4C1 is formed by a single curved surface; however, the opening 4C could also be formed by multiple curved surfaces.

[0088] Furthermore, as a variation of this embodiment, such as Figure 24 and Figure 25 As shown, the electrode pad portion 4A in wiring pattern 4 can also be a component with a rectangular shape in top view. The opening 4C of the electrode pad portion 4A is also rectangular in top view, and the opening 4C is formed by being surrounded by four planes 4C2. The filling portion 5B of the probe 5 (not shown) filling the opening 4C is formed into a prism shape with four sides that engage with the four planes of the opening 4C. In this modified example, similarly to the embodiment described above, the upper surface around the upper end of the opening 4C in the electrode pad portion 4A and the flange surface (lower annular plane) of the protrusion 5A in the probe 5 (not shown) engage with each other in a plane.

[0089] According to the structure and variations of the above embodiments, at least a portion of the side surface of the probe 5 is joined to the wiring pattern 4 by one or more curved surfaces, or at least a portion of the side surface of the probe 5 is joined to the wiring pattern 4 by two or more flat surfaces. Therefore, it is possible to prevent the probe 5 from falling off or bending from the electrode pad portion 4A. In addition, the probe 5 with such a fixed structure has the following function: when external stress is applied, it disperses the external stress to the upper surface of the electrode pad portion 4A, the inner surface of the opening portion 4C, and the seed layer 3. Especially in this embodiment, when the probe 5 is disposed on the elastic material layer 2 formed of polyimide, the aforementioned external stress can also be dispersed to the elastic material layer 2. When the probe 5 is pressed against the protrusion 15 during measurement, it is possible to prevent the probe 5 from tipping over, falling off, or being damaged.

[0090] (The shape of the probe's front end)

[0091] The front end of the probe 5 is formed by a curved surface 5D with a recess 5C in the center of the front end face.

[0092] In this embodiment, the diameter of the probe 5 is set to approximately 5.0 to 15.0 μm. The radius of curvature of the recess 5C is set to approximately 1.0 μm to 5.0 μm. Furthermore, the radius of curvature of the curved surface of the peripheral shoulder of the recess 5C is set to approximately 0.1 to 3.0 μm.

[0093] (Brief structure of the substrate being measured)

[0094] Next, use Figure 6 and Figure 7 The substrate 11 to be measured using the applicable probe device 20 will now be described. The substrate 11 includes a core substrate 12 with a multilayer structure (not shown), surface pads 13, back pads 14, and bumps 15. Figure 7 As shown, bump 15 is approximately spherical or cylindrical in shape and is formed by solder. It should be noted that the solder has a Vickers hardness of approximately 20 Hv.

[0095] It should be noted that, in this embodiment, it is applicable to Figure 6 and Figure 7 The substrate 11 shown is the one being measured, but as described above, it can also be applied to various substrates such as packaging substrates, printed wiring substrates, flexible substrates, multilayer wiring substrates, electrode plates for liquid crystal displays, organic EL displays, and thin film carriers.

[0096] (Function, effect)

[0097] The function and operation of the probe device 20 in this embodiment will be explained below.

[0098] In the probe device 20 of this embodiment, an elastic material layer 2 made of polyimide is sandwiched between the glass substrate 1 and the probe 5. Therefore, the elastic material layer 2 can absorb the reaction force when the probe 5 contacts the bump 15. Thus, it is possible to prevent the probe 5 from deforming, bending, or falling off in a tilting manner. In this embodiment, by using such a simple structure of sandwiching the elastic material layer 2 between the glass substrate 1 side and the probe 5 side, it is possible to simultaneously achieve miniaturization and narrow pitch of the probe 5 and reduce costs.

[0099] In addition, since the height deviation between multiple bumps 15 can be absorbed by the elastic material layer 2, the measurement accuracy is high and stable measurement can be performed.

[0100] If the height deviation between multiple bumps 15 is small enough, or if the height deviation of the bumps 15 can be absorbed by the deformation of the bumps 15 when the probe 5 abuts, the elastic material layer 2 may not be provided.

[0101] Figure 8This diagram illustrates the state in which the probe device 20 of this embodiment is connected to the test instrument 6 via wiring 7 to perform electrical measurements on the substrate 11 to be measured. In this embodiment, the front end face of the probe 5 is formed by a curved surface 5D having a recess 5C, therefore, as... Figure 8 As shown, the peripheral shoulder of the recess 5C can easily embed into the bump 15 provided on the surface of the substrate 11 being measured. Therefore, the electrical connection between the plurality of probes 5 and the corresponding bumps 15 becomes good, enabling the electrical measurement to be stabilized.

[0102] Furthermore, since the tip of probe 5 is formed from a curved surface 5D without edges, the generation of solder or other chips can be suppressed. Therefore, it is possible to prevent solder or other chips from adhering to the tip of probe 5, and the cleanliness of probe 5 can be maintained consistently with simple cleaning. Thus, errors or false detections caused by solder or other chips generated in probe device 20 can be suppressed.

[0103] (Manufacturing method of probe device)

[0104] The following uses Figures 9-1 to 12-3 The manufacturing method of the probe device 20 of this embodiment will be described.

[0105] (Elastic material layer formation process)

[0106] First, such as Figure 9-1 As shown, polyimide is coated onto the surface of glass substrate 1 to form an elastic material layer 2 with a film thickness of, for example, 3.0 to 50.0 μm.

[0107] (Seed layer formation process)

[0108] Next, as Figure 9-2 As shown, a seed layer 3 made of nickel alloy with a thickness of approximately 50 to 500 nm is formed on the entire surface of the elastic material layer 2 by electroless plating. Nickel (Ni) can also be electroless plated as the seed layer 3. In addition to electroless plating, sputtering, vapor deposition, and other methods can also be used to form the seed layer 3.

[0109] (Probe forming process)

[0110] Figures 9-3 to 11-2 The probe forming process is shown. For example... Figure 9-3As shown, a positive photoresist 9 is coated onto the seed layer 3 and pre-baked. Then, exposure is performed using a photomask 21 to transfer the mask pattern onto the photoresist 9. It should be noted that in this embodiment, a positive photoresist 9 is used, but a negative photoresist can also be used. It should also be noted that in the above exposure, the photomask 21 may not be used, and the pattern may be dynamically created using direct-line exposure with a DMD (Digital Micromirror Device) or similar device.

[0111] Next, development and rinsing are performed. For example... Figure 10-1 As shown, the exposed portion of the photoresist 9 is removed to form the exposed portion 9B, while the unexposed portion of the photoresist 9 becomes the residual portion 9A. The exposed portion 9B is the pattern used to form the wiring pattern 4. Figure 10-1 A cross-section of the area in which the electrode pads 4A in the plurality of wiring patterns 4 are arranged adjacent to each other in the center of the glass substrate 1 is shown.

[0112] Next, through a first electroforming process, an electrode pad portion 4A is formed on the exposed portion 9B of the aforementioned photoresist 9. It should be noted that... Figure 10-2 A cross-section of the region where the electrode pad portion 4A is formed is shown, but in this process, the wiring pattern 4, including the electrode pad portion 4A, is patterned (film formed). Here, the wiring pattern 4 is grown using the seed layer 3 of the substrate as a seed for film formation. In this embodiment, the film thickness of the wiring pattern 4 is set to, for example, 5.0 μm. Furthermore, in this embodiment, the Ni-Co composition ratio is adjusted so that the Vickers hardness of the wiring pattern 4 formed by the first electroforming process is 250–550 Hv.

[0113] Figure 10-3 The diagram shows the state after the photoresist 9 residue 9A is peeled off following the formation of wiring pattern 4, followed by exposure and development using new photoresist 16, resulting in residue 16A and exposed portion 16B. Here, exposed portion 16B serves as the pattern for forming probe 5. Specifically, it is configured such that, when viewed from above, the opening 4C of electrode pad portion 4A is located at the center of exposed portion 16B. The diameter of exposed portion 16B is set to approximately 5.0 to 15.0 μm. It should be noted that these exposed portions 16B are for forming the pattern of probe 5, therefore, no other areas are formed in the photoresist 16.

[0114] Figure 11-1 The diagram shows the state in which the probe 5 is formed based on a resist pattern formed by photoresist 16 and through a second electroforming process. In this second electroforming process, the upper surface (front end face) of the probe 5, which grows in the exposed portion 16B, is formed by a curved surface 5D having a central recess 5C.

[0115] In this embodiment, the diameter of the probe 5 is, for example, about 5.0 to 15.0 μm. The radius of curvature of the recess 5C is, for example, 1.0 μm to 5.0 μm. Furthermore, the radius of curvature of the curved surface of the shoulder portion of the recess 5C is, for example, 0.1 to 3.0 μm. In addition, in this embodiment, the Ni-Co composition ratio is adjusted so that the Vickers hardness of the probe 5 formed by the second electroforming process is 250 to 550 Hv.

[0116] Figure 11-2 The image shows the state where the residual portion 16A of the aforementioned photoresist 16 has been removed. Thus, a probe 5 is formed in the electrode pad portion 4A, which is connected to the seed layer 3, the opening 4C, and the periphery of the opening 4C in the electrode pad portion 4A. It should be noted that in this process, the seed layer 3 in areas other than the wiring pattern 4 is also simultaneously etched.

[0117] After that, as Figure 11-3 As shown, at probe 5 and the back side electrode pad portion 4B (refer to...) Figures 1-3 An insulating film 17 is formed in the area other than the probe 5. By forming this insulating film 17, the measuring surface side of the probe device 20 can be protected. That is, the strength of the probe 5 can be improved. In addition, by forming such an insulating film 17, inspection defects caused by contact with the bump 15 can be prevented. It should be noted that the insulating film 17 can be formed by etching back a nitride film, oxide film, SOG (Spin-On-Glass) film, DLC (Diamond Like Carbon) film, etc., obtained by CVD method, so as to expose the probe 5.

[0118] (The glass substrate folding process)

[0119] Figure 12-1 The diagram shows the substrate structure used in the glass substrate folding process of the probe device manufacturing method of this embodiment. It should be noted that the illustration of the insulating film 17 described above is omitted in the description of this folding process.

[0120] like Figure 12-2 As shown, a laser beam LB is irradiated from the side of the glass substrate 1 into the region of the glass substrate 1 that is folded back, so as to peel off the interface between the elastic material layer 2 and the glass substrate 1.

[0121] Next, as Figure 12-3 As shown, the glass substrate 1 in the area where the interface with the elastic material layer 2 is peeled off is cut off. As a result, the folded-back portion 1B, on which the back side electrode pad portion 4B is formed, is connected to the substrate body 1A via the elastic material layer 2 and the like.

[0122] After that, as Figure 3As shown, the folded-back portion 1B is folded back and overlapped onto the back sides of both sides of the substrate body 1A, thereby completing the process. Figure 1 The probe device 20 shown is as shown.

[0123] [Second Implementation]

[0124] Figure 13 The probe device 20A according to the second embodiment of the present invention is shown. In this embodiment, it is configured such that the folded-back portion 1B of the probe device 20 of the first embodiment is removed, and the elastic material layer 2 is folded back and fixed to the back side of the substrate body 1A. Other structures in this embodiment are the same as those in the probe device 20 of the first embodiment.

[0125] [Third Implementation]

[0126] Figure 14 The probe device 20B according to the third embodiment of the present invention is shown. In this embodiment, it is configured such that the fold-back portion 1B of the probe device 20 of the first embodiment described above is divided into two parts, fold-back portions 1E and 1F, and the substrate body 1D, the fold-back portions 1E and 1F are cut at an angle of 45 degrees to each other so that the cut surfaces are joined together. Other structures in this embodiment are the same as those in the probe device 20 of the first embodiment described above.

[0127] [Fourth Implementation]

[0128] Figure 16 This is a partial cross-sectional view illustrating the main parts of the probe device according to the fourth embodiment of the present invention. In this embodiment, the opening 4C of the electrode pad portion 4A is formed such that the opening diameter gradually increases towards the glass substrate 1. Therefore, the cross-section of the inner wall of the opening 4C is an inverted cone shape, and the filling portion 5B of the probe 5 filled in the opening 4C is reliably held in the electrode pad portion 4A. Therefore, the probe 5 is difficult to tilt or fall off.

[0129] The following uses Figures 17-1 to 20 The manufacturing method of the probe device according to the fourth embodiment of the present invention will be described.

[0130] like Figure 17-1 As shown, polyimide is coated onto the surface of a glass substrate 1 to form an elastic material layer 2 with a film thickness of, for example, 3.0 to 50.0 μm. A seed layer 3 made of a nickel alloy with a thickness of, for example, about 50 to 500 nm is then formed on the entire surface of the elastic material layer 2 by chemical plating. Nickel (Ni) can also be chemically plated as the seed layer 3. In addition to chemical plating, sputtering, vapor deposition, etc., can also be used as methods for forming the seed layer 3.

[0131] Then, by using a photoresist prepared in a manner that, for example, makes the exposure sensitivity vary according to the exposure depth of the exposure light, the photoresist 22 is patterned (exposed, developed) to form a frustum shape.

[0132] The photoresist 22 in the truncated cone shape forms a space for forming the filling portion 5B of the probe 5. A first electroforming process is performed while retaining the photoresist 22 in the truncated cone shape to form the wiring layer 4D.

[0133] Next, as Figure 17-2 As shown, the photoresist 22 is stripped to expose the opening 4C of the wiring layer 4D.

[0134] After that, as Figure 17-3 As shown, for example, a positive photoresist 23 is applied and pre-baked.

[0135] Next, as Figure 18-1 As shown, exposure light is applied to the entire surface of the glass substrate 1 (backside exposure). Since the exposure light passes through the opening 4C of the wiring layer 4D, the exposed area is as follows: Figure 18-2 As shown, it is removed through development. Figure 18-2 As shown, the opening 4C is integrated with the opening 23A of the photoresist 23 to form a space for forming the probe 5.

[0136] Figure 19-1 Shown in Figure 18-2 The probe 5 was formed by performing a second electroforming process in the current state. Afterwards, the photoresist 23 was stripped off.

[0137] After that, as Figure 19-2 As shown, the photoresist 24 is repatterned so that the probe 5 is covered by the photoresist 24. Then, the pattern of the photoresist 24 is used as an etching mask to etch and pattern the wiring layer 4D. It should be noted that the etching of the wiring layer 4D can also be performed using either dry etching or wet etching.

[0138] It should be noted that, in this embodiment, as Figure 18-1 The back exposure was performed as shown, but of course it could also be done as shown. Figure 20 Exposure is performed by arranging a photomask 26 on the surface side as shown. In this case, a negative photoresist is used as the photoresist 25. As the photomask 26, a photomask with a light-shielding portion 26A formed to block the area in the photoresist 25 where the probe 5 should be formed is used.

[0139] [Fifth Implementation]

[0140] Figure 21The probe device 30 according to the fifth embodiment of the present invention is shown. The probe device 30 includes a glass substrate 31 serving as a probe device substrate, an elastic material layer 32, a plurality of probes 5, a plurality of through holes 34, and a plurality of back-side electrode pads 36. In this embodiment, the probes 5 also pass through… Figures 9-1 to 11-3 The process shown is used to form it. Alternatively, the through-hole 34 can be formed using a plating technique, such as an in-substrate through-hole embedding technique.

[0141] Probe 5, for example, can be used with Figure 6 The bumps 15 of the substrate 11 being measured are arranged in a narrow-pitch configuration, corresponding to the spacing between them. Through-holes 34 penetrate the glass substrate 31, connecting the wiring pattern 33 formed on the surface side of the glass substrate 31 to the wiring pattern 35 on the back side. The back-side electrode pads 36 are connected to the back-side wiring pattern 35. It should be noted that the back-side electrode pads 36 are distributed in a region larger than the arrangement area of ​​the probes 5, with a spacing larger than the pitch of the probes 5.

[0142] like Figure 21 As shown, in this embodiment, the lead tool 40 is connected to the back-side electrode pad portion 36 of the probe device 30 for measurement. The lead tool 40 has a plurality of contact pins 42 protruding from the surface of a tool substrate 41 made of a rectangular insulator of the same size as the glass substrate 31 of the probe device 30, at a spacing corresponding to the back-side electrode pad portion 36 of the probe device 30. The spacing between these contact pins 42 is set to be equal to the spacing between the back-side electrode pad portions 36 of the probe device 30 and longer than the spacing between the probes 5. Figure 21 As shown, the pin tool 40 is connected to the tester 43. The tester 43 can perform known open-circuit and short-circuit tests on the substrate being tested. It should be noted that in this embodiment, a glass substrate 31 is used as the probe device substrate, but a silicon substrate or other insulating substrates can also be used.

[0143] In this embodiment, the relationship between the probe 5, the wiring pattern 33, and the elastic material layer 32 is the same as that of the probe device 20 in the first embodiment described above. In this embodiment, unlike the probe device 20 in the first embodiment, it is not necessary to cut the glass substrate 31 and bend it towards the back side, thus improving the ease and reliability of processing.

[0144] [Sixth Implementation Method]

[0145] Figure 22The sixth embodiment of the probe device 30A of the present invention is shown. The probe device 30A includes a glass substrate 31 serving as a probe device substrate, a resin-based substrate 37 arranged to surround the glass substrate 31, an elastic material layer 32, a plurality of probes 5, a plurality of through holes 34 formed in the resin-based substrate 37, and a plurality of back-side electrode pads 36. In this embodiment, the probes 5 also pass through… Figures 9-1 to 11-3 It is formed through the process shown.

[0146] In this embodiment, the wiring pattern 33 connecting the probes 5 and the back-side wiring pattern 35 connecting the back-side electrode pad portion 36 are connected through a plurality of through holes 34. The probes 5 are arranged with a narrow pitch. The back-side electrode pad portion 36 is distributed in a region larger than the arrangement area of ​​the probes 5 with a pitch larger than the pitch of the probes 5. Other structures in this embodiment are the same as those in the probe device 30 of the fifth embodiment described above. In addition, the relationship between the probes 5, wiring pattern 33 and elastic material layer 32 in this embodiment is the same as that in the probe device 20 of the first embodiment described above. It should be noted that in this embodiment, a glass substrate 31 is used as the probe device substrate, but a silicon substrate or other insulating substrates may also be used.

[0147] In this embodiment, since the through hole 34 is formed in the resin substrate 37, it has the advantage that it can be manufactured more simply than forming the through hole 34 in the glass substrate 31.

[0148] Especially when tempered glass is used as the material of the glass substrate 31, the formation of the through hole 34 becomes difficult, so this embodiment is effective.

[0149] [Seventh Implementation]

[0150] Figure 23 This invention illustrates a probe device 50 according to a seventh embodiment. The probe device 50 includes a multilayer printed circuit board 51 with multiple wiring layers and vias formed internally, an elastic material layer 32, multiple probes 5, and a back-side electrode pad portion 36. In this embodiment, the probes 5 also pass through… Figures 9-1 to 11-3 The process is as shown. In this embodiment, the laminated printed wiring board 51 can be made of various materials, such as glass epoxy board or glass nonwoven substrate.

[0151] In this embodiment, the multilayer printed wiring board 51 is used as the substrate of the probe device. Therefore, by simply staggering the positions of the vias in the multilayer printed wiring board, a wiring structure that increases the spacing between the back-side electrode pads 36 relative to the probes 5 disposed in narrow areas can be easily fabricated. Furthermore, since complex wiring can be fabricated within the multilayer printed wiring board 51, the pattern structure of the wiring pattern 33 and the back-side wiring pattern 35 can be simplified. In this probe device 50, the spacing of the back-side wiring pattern 35 can also be increased, thus enabling reliable connection of the lead tool 40.

[0152] (Other implementation methods)

[0153] The embodiments of the present invention have been described above, but it should not be considered that the discussion and drawings, which constitute a part of the disclosure of the embodiments, limit the present invention. Those skilled in the art will be able to recognize various alternative embodiments, examples, and techniques based on this disclosure.

[0154] For example, in the various embodiments described above, such as Figure 6 and Figure 7 As shown, a substrate 11 with spherical bumps 15 was used for testing, but as... Figure 15 As shown, the substrate 11A to be measured can also be used, which has a cylindrical (rectangular cross-section) bump 15A. In such other embodiments, the effect of reliably performing measurements is also achieved.

[0155] The selection of the negative or positive type of photoresist in each of the above embodiments can be appropriately changed in accordance with the structure of the glass substrate 1 side.

[0156] In the above embodiments, the structure is configured such that the entire surface of the probe device substrate is covered by elastic material layers 2 and 32. However, it can also be configured such that a first insulating film, for example composed of an oxide film, a nitride film, SOG, or DLC, is formed in the area where the probe 5 is located, and a second insulating film, for example composed of resin, is formed on its outer side. In this case, it is preferable that the hardness of the first insulating film is greater than that of the second insulating film.

[0157] Explanation of reference numerals in the attached figures

[0158] 1. Glass substrate (probe device substrate)

[0159] 1A substrate main body

[0160] 1B Turnback Section

[0161] 1c cut surface

[0162] 1D substrate body

[0163] 1E, 1F Turnback Section

[0164] 2. Elastic material layer

[0165] 3 Seed Layer

[0166] 4 Wiring pattern

[0167] 4A Electrode Pad Section

[0168] 4A1 upper surface

[0169] 4B Backside Electrode Pad Section

[0170] 4C Opening

[0171] 4C1 inner circumferential surface

[0172] 4C2 plane

[0173] 4D wiring layer

[0174] 5 probes

[0175] 5A protrusion

[0176] 5A1 flange surface

[0177] 5B Filling Section

[0178] 5B1 outer periphery

[0179] 5B2 Lower end face

[0180] 5C concave part

[0181] 5D curved surface

[0182] 6. Testing Instrument

[0183] 7. Wiring

[0184] 9. Photoresist

[0185] 9A Residual Section

[0186] 9B Exposed area

[0187] 11, 11A Substrate under test

[0188] 12-core substrate

[0189] 13 Surface pad area

[0190] 14 Backside solder pads

[0191] 15, 15A bumps

[0192] 16 Photoresist

[0193] 16A Residual Section

[0194] 16B Exposed Part

[0195] 17 Insulating film

[0196] 20, 20A, 20B probe devices

[0197] 21 Photomask

[0198] 22, 23, 24, 25 Photoresist

[0199] 23A Opening

[0200] 26 Photomasks

[0201] 26A Light-shielding section

[0202] 30, 30A probe device

[0203] 31 Glass substrate

[0204] 32 Elastic material layer

[0205] 33 Wiring Pattern

[0206] 34 through holes

[0207] 35. Backside wiring pattern

[0208] 36 Backside electrode pads

[0209] 37 Resin-based substrates

[0210] 40-pin tool

[0211] 41 Tool substrate

[0212] 42 Contact pins

[0213] 43 Tester

[0214] 50 probe devices

[0215] 51-layer printed circuit board

Claims

1. A probe device, characterized in that, have: A probe device substrate having a flat surface; Multiple wiring patterns, the multiple wiring patterns being disposed on the flat surface; and A probe, which is formed protrudingly at a designated position in the wiring pattern.

2. The probe device according to claim 1, wherein, An elastic material layer is sandwiched between the probe device substrate and the wiring pattern.

3. The probe device according to claim 1, wherein, The probe has a recess at the center of its front end face.

4. The probe device according to claim 1, wherein, The probe is made of a nickel-cobalt alloy.

5. The probe device according to claim 1, wherein, The probe device substrate is made of glass.

6. The probe device according to claim 2, wherein, The wiring pattern is formed on the elastic material layer, and the probe is disposed on the electrode pad portion of the wiring pattern.

7. The probe device according to claim 6, wherein, The wiring pattern and the probe are made of different materials.

8. The probe device according to claim 6, wherein, The elastic material layer and the wiring pattern extend from the periphery of the probe device substrate to the back side of the probe device substrate.

9. The probe device according to claim 8, wherein, The elastic material layer and the wiring pattern are folded back towards the back side of the probe device substrate when only the probe device substrate is partially cut off or removed.

10. The probe device according to claim 1, wherein, The entire surface of the probe device substrate is covered by an insulating film, with only the probe protruding through the insulating film.

11. The probe device according to claim 6, wherein, At least a portion of the side of the probe contacts the wiring pattern through one or more curved surfaces.

12. The probe device according to claim 6, wherein, At least a portion of the side of the probe contacts the wiring pattern through two or more planes.

13. The probe device according to claim 11, wherein, An opening is formed in the electrode pad portion of the wiring pattern. The probe consists of a filling portion and a protrusion. The filling portion tightly fills the opening and is electrically connected to the electrode pad portion. The protrusion protrudes above the electrode pad portion. The filling portion contacts the wiring pattern through one or more curved surfaces.

14. The probe device according to claim 12, wherein, An opening is formed in the electrode pad portion of the wiring pattern. The probe consists of a filling portion and a protrusion. The filling portion tightly fills the opening and is electrically connected to the electrode pad portion. The protrusion protrudes above the electrode pad portion. The filling portion contacts the wiring pattern through two or more planes.

15. The probe device according to claim 13 or 14, wherein, The opening diameter of the opening gradually increases toward the probe device substrate, and the inner wall of the opening is formed into an inverted cone shape.

16. The probe device according to claim 13 or 14, wherein, The protrusion is composed of a columnar protrusion having a diameter larger than that of the opening, such that it at least covers the top of the opening.

17. A method for manufacturing a probe device, characterized in that, have: The elastic material layer formation process involves forming an elastic material layer on the surface of a probe device substrate with a flat surface. The seed layer formation process involves forming a seed layer on top of the elastic material layer. The wiring pattern forming process involves patterning the wiring pattern on the seed layer; as well as The probe forming process forms the probe on the electrode pad portion in the wiring pattern.

18. The method for manufacturing the probe device according to claim 17, wherein, The elastic material layer is formed from polyimide.

19. The method for manufacturing the probe device according to claim 17, wherein, In the probe forming process, electroforming is performed in a manner that causes the probe to protrude from the seed layer toward the top of the electrode pad. A recess is formed in the center of the front end face of the probe.

20. The method for manufacturing the probe device according to claim 17, wherein, The electrode pads and the probe are formed of a nickel-cobalt alloy.

21. The method for manufacturing the probe device according to claim 17, wherein, In the wiring pattern forming process, the wiring pattern is patterned such that an opening is formed in the center of the electrode pad portion in the wiring pattern. In the probe forming process, electroforming is performed such that the probe fills the opening from the seed layer and protrudes upward toward the electrode pad portion, and the probe is patterned such that the diameter of the portion protruding upward toward the electrode pad portion is longer than the diameter of the opening portion.

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