Substrate processing apparatus and method

Abstract

The present invention relates to an apparatus and a method for processing a substrate. The apparatus comprises: a lower chamber part; an upper chamber part for opening and closing the upper side of the lower chamber part; a position adjusting part for adjusting the position of the upper chamber part; a lower support part which is installed in the lower chamber part and supports the lower substrate; and an upper support part which is mounted in the upper chamber part, supports the upper substrate facing the lower substrate, and pressurizes the upper substrate and the lower substrate with uniform pressure.

Description

TECHNICAL FIELD

[0001] The present application relates to a substrate processing apparatus and method, and more particularly, to a substrate processing apparatus and method that uniformly transfers pressure to the entire surface of a substrate, thereby preventing poor bonding. BACKGROUND

[0002] In recent years, as semiconductor wafers are becoming thinner, a wafer bonding process that temporarily bonds a substrate is performed in order to prevent the substrate from being deformed or damaged during a process.

[0003] Since the final substrate after all process treatments is very thin, the thickness uniformity of the two substrates bonded together is very important, and thus it is necessary to uniformly provide pressure to the entire surface of the two substrates in a pressurizing step.

[0004] In the past, a motor and a screw or a cylinder have been used to pressurize the central portion of a substrate, resulting in a problem of non-uniform pressure between the center and the edge of the substrate. Therefore, it is necessary to improve it.

[0005] The background art of the present application is disclosed in Korean Patent Laid-open Publication No. 2019-0063342 (published on June 7, 2019, and entitled "Vacuum holding portion protection device of temporary bonding system"). SUMMARY

[0006] TECHNICAL PROBLEM

[0007] The present application has been made to improve the above-described problems, and an object of the present application is to provide a substrate processing apparatus and method that uniformly transfers pressure to the entire surface of a substrate, thereby preventing poor bonding.

[0008] SOLUTION TO THE PROBLEM

[0009] The substrate processing apparatus according to the present application includes a lower chamber portion, an upper chamber portion that opens and closes the upper side of the lower chamber portion, a position adjusting portion that adjusts the position of the upper chamber portion, a lower support portion installed to the lower chamber portion to support a lower substrate, and an upper support portion installed to the upper chamber portion to support an upper substrate facing the lower substrate and to pressurize the upper substrate and the lower substrate.

[0010] The upper support portion can pressurize the upper substrate and the lower substrate by a pressure difference between the inside of a chamber portion constituted by the lower chamber portion and the upper chamber portion and the upper support portion.

[0011] The lower chamber portion may include: a first lower chamber portion; a second lower chamber portion protruding upward from the edge of the first lower chamber portion and surrounding the lower support portion; and a third lower chamber portion connected to at least one of the first lower chamber portion and the second lower chamber portion, converting it to a vacuum or atmospheric pressure state.

[0012] The position adjustment unit may include: a height adjustment unit capable of adjusting the height of the upper chamber; and an alignment adjustment unit connected to the upper support unit to align the upper substrate.

[0013] The upper support portion may include: a first upper deformable portion, built into the upper chamber portion, whose shape deforms vertically due to fluid pressure; a first upper support portion, installed on the first upper deformable portion, supporting the upper substrate and heating the upper substrate; and a first upper adjustment portion, connected to the first upper deformable portion or the first upper support portion, adjusting the height of the first upper support portion.

[0014] It is possible that the first upper deformable part is in the shape of a corrugated pipe.

[0015] It is possible that the diameter of the first upper deformable portion is more than 50% of the diameter of the upper substrate.

[0016] The first upper adjustment part may include: one or more first adjustment rods connected to the first upper deformation part or the first upper support part, passing through the upper chamber part; and a first adjustment movement part to move the first adjustment rods up and down.

[0017] The upper support portion may include: a second upper deformable portion, built into the upper chamber portion, whose shape deforms vertically due to fluid pressure; a second upper support portion, installed on the second upper deformable portion, supporting the upper substrate and heating the upper substrate; and a second upper adjustment portion, connected to the second upper deformable portion, adjusting the pressure to change the vertical length of the second upper deformable portion.

[0018] It is possible that the second upper deformable part is in the shape of a corrugated pipe.

[0019] Alternatively, the diameter of the second upper deformable portion may be 50% or more of the diameter of the upper substrate.

[0020] The second upper adjustment section may include: a second adjustment supply section connected to the second upper deformable section to supply fluid thereto; and a second adjustment discharge section connected to the second upper deformable section to discharge the fluid therein, wherein the second adjustment discharge section is connected to a vacuum pump section that converts the upper chamber section and the lower chamber section into a vacuum state.

[0021] Alternatively, the second upper adjustment part may further include a second upper movement prevention part, which is connected to the second upper support part and extends through the upper chamber part, thereby restricting the movement of the second upper deformable part.

[0022] The substrate processing method of the present invention includes: a substrate loading step, wherein a lower substrate is mounted on a lower support portion and an upper substrate is mounted on an upper support portion; a substrate alignment step, wherein the center or reference mark of the lower substrate and the upper substrate are aligned; a state transition step, wherein the working space of the lower substrate and the upper substrate is converted to a vacuum state; a substrate bonding step, wherein when the working space of the lower substrate and the upper substrate becomes a vacuum state, the upper support portion applies pressure to the upper substrate and the lower substrate through a pressure difference and bonds them together; and a substrate discharge step, wherein the bonded lower substrate and the upper substrate are discharged.

[0023] The substrate alignment step may include: a camera deployment step, in which the camera measures the positions of the lower substrate and the upper substrate; a position adjustment step, in which the position adjustment unit adjusts the position of the upper substrate according to the measurement value of the camera; and a camera return step, in which the camera returns to its original position.

[0024] The state transition step may include: a sealing step, which seals the lower chamber containing the lower support and the upper chamber containing the upper support; and a vacuum step, which discharges the fluid inside the lower chamber and the upper chamber to the outside to convert to a vacuum state.

[0025] The substrate bonding step may include: a first adjustment step, in which the height of the first upper support portion is adjusted by the first upper adjustment portion so that the lower substrate is close to the upper substrate; and a first bonding step, in which the first upper deformation portion expands due to the pressure difference so that the lower substrate and the upper substrate are bonded under uniform compression.

[0026] The substrate bonding step may include: a second adjustment step, in which the height of the second upper support is adjusted when the second upper adjustment part expands the second upper deformation part, thereby bringing the lower substrate closer to the upper substrate; and a second bonding step, in which the second upper deformation part expands due to the pressure difference, thereby bonding the lower substrate and the upper substrate under uniform compression.

[0027] Invention Effects

[0028] In the substrate processing apparatus and method of the present invention, since the shape of the upper support portion is deformed due to the pressure difference with the working space in a vacuum state when the lower support portion is placed on the lower support portion and the upper support portion is mounted on the upper support portion, the pressure distribution between the lower and upper substrates can become uniform when they are in close contact with each other. Attached Figure Description

[0029] Figure 1 This is a schematic diagram illustrating a substrate processing apparatus according to an embodiment of the present invention.

[0030] Figure 2 This is a schematic diagram illustrating the lower chamber portion according to an embodiment of the present invention.

[0031] Figure 3 This is a schematic diagram illustrating the position adjustment unit according to an embodiment of the present invention.

[0032] Figure 4 This is a schematic diagram illustrating the upper support portion according to the first embodiment of the present invention.

[0033] Figure 5 This is a schematic diagram illustrating the upper support portion according to the second embodiment of the present invention.

[0034] Figure 6 This is a flowchart illustrating a substrate processing method according to an embodiment of the present invention.

[0035] Figure 7 This is a schematic diagram illustrating a substrate alignment process according to an embodiment of the present invention.

[0036] Figure 8 This is a diagram schematically illustrating the state transition process involved in one embodiment of the present invention.

[0037] Figure 9 This diagram schematically illustrates the substrate bonding process performed via the upper support portion according to the first embodiment of the present invention.

[0038] Figure 10 This diagram schematically illustrates the substrate bonding process performed via the upper support portion according to the second embodiment of the present invention. Detailed Implementation

[0039] Hereinafter, embodiments of the substrate processing apparatus and method according to the present invention will be described with reference to the accompanying drawings. In this process, for ease of explanation and clarity, the thickness of lines or the size of constituent elements illustrated in the drawings may be exaggerated. Furthermore, the terminology used below is defined in consideration of the function in the present invention and may vary according to the intention or convention of the user. Therefore, these terms should be defined based on the entire contents of this specification.

[0040] Figure 1 This is a schematic diagram illustrating a substrate processing apparatus according to one embodiment of the present invention. (Refer to...) Figure 1 An embodiment of the present invention relates to a substrate processing apparatus 1, which includes a lower chamber portion 10, an upper chamber portion 20, a position adjustment portion 30, a lower support portion 40, and an upper support portion 50.

[0041] The lower chamber 10 is fixedly mounted on a fixture, and the upper side may be open.

[0042] The upper chamber portion 20 can open and close the upper side of the lower chamber portion 10. As an example, the upper chamber portion 20 may be positioned above the lower chamber portion 10 and may separate from the lower chamber portion 10 as it moves up and down to open the upper side of the lower chamber portion 10, or it may be positioned on the lower chamber portion 10 to cover the upper side of the lower chamber portion 10.

[0043] The position adjustment unit 30 can adjust the position of the upper chamber 20. For example, the position adjustment unit 30 can move the upper chamber 20 up or down or horizontally.

[0044] The lower support portion 40 is installed in the lower chamber portion 10 and is capable of supporting the lower substrate 100. As an example, the lower support portion 40 may be built into the lower chamber portion 10, adsorb the lower substrate 100, and have a heating wire built into it to heat the lower substrate 100.

[0045] The upper support portion 50 is mounted on the upper chamber portion 20, supporting the upper substrate 200 facing the lower substrate 100. It can deform due to the pressure difference caused by the internal vacuum of the lower chamber portion 10 and the upper chamber portion 20, thereby applying uniform pressure to the lower substrate 100 and the upper substrate 200. In other words, the upper support portion 50 can apply pressure to the lower substrate 100 and the upper substrate 200 through the pressure difference between the interior of the chamber portion formed by the lower chamber portion 10 and the upper chamber portion 20 and the upper support portion 50. As an example, the upper support portion 50 may be built into the upper chamber portion 20 and connected to the position adjustment portion 30, adsorbing the upper substrate 200, and having a built-in heating wire to heat the upper substrate 200. The upper support portion 50 is maintained at atmospheric pressure, and expands due to the pressure difference when the surrounding environment becomes a vacuum.

[0046] Figure 2 This is a schematic diagram illustrating the lower chamber portion according to one embodiment of the present invention. (Refer to...) Figure 2 In one embodiment of the present invention, the lower chamber portion 10 may include a first lower chamber portion 11, a second lower chamber portion 12, and a third lower chamber portion 13.

[0047] The first lower chamber portion 11 can be mounted on a fixed object. The second lower chamber portion 12 protrudes upward from the edge of the first lower chamber portion 11 and has an open shape on the upper side, and can surround the lower support portion 40. The third lower chamber portion 13 is connected to at least one of the first lower chamber portion 11 and the second lower chamber portion 12, and can convert the sealed space into a vacuum or atmospheric pressure state. As an example, when the lower chamber portion 10 and the upper chamber portion 20 form a sealed space, the third lower chamber portion 13 can either discharge the air present in the sealed space to the outside or supply outside air to the sealed space.

[0048] Figure 3 This is a schematic diagram illustrating a position adjustment section according to an embodiment of the present invention. (Refer to...) Figure 3 In one embodiment of the present invention, the position adjustment unit 30 may include an up-down adjustment unit 31 and an alignment adjustment unit 32.

[0049] The height adjustment section 31 can adjust the height of the upper chamber section 20. For example, in the height adjustment section 31, a height-moving section 312 mounted on a plurality of upper and lower column sections 311 can move up and down, and the height-moving section 312 is directly connected to the upper chamber section 20, thereby adjusting the height of the upper chamber section 20. Furthermore, the height-moving section 312 is connected to an alignment adjustment section 32 connected to the upper chamber section 20, and the height of the upper chamber section 20 can be adjusted via the alignment adjustment section 32.

[0050] The alignment adjustment part 32 is connected to the upper support part 50 and can align the upper substrate 200. As an example, the alignment adjustment part 32 may be mounted on the vertical moving part 312 or the upper chamber part 20 and directly connected to the upper support part 50, so that the upper support part 50 can move along the three-axis direction to align the misalignment between the lower substrate 100 and the upper substrate 200.

[0051] Figure 4 This is a schematic diagram illustrating the upper support portion according to the first embodiment of the present invention. (Refer to...) Figure 4 The upper support portion 50 in the first embodiment of the present invention may include a first upper deformable portion 51, a first upper supporting portion 52, and a first upper adjusting portion 53.

[0052] The first upper deformable part 51 is built into the upper chamber part 20, and its shape will deform vertically due to the pressure of the fluid. As an example, the upper deformable part 51 may be connected to the alignment adjustment part 32 installed in the upper chamber part 20 and be movable, and expand or contract due to the pressure of the fluid, thereby changing its vertical length.

[0053] The first upper support portion 52 is mounted on the first upper deformable portion 51, supports the upper substrate 200, and is capable of heating the upper substrate 200. As an example, the first upper support portion 52 may be coupled to the lower end of the first upper deformable portion 51 to adsorb the upper substrate 200, thereby fixing the upper substrate 200. The first upper support portion 52 is provided with a heating wire, which is capable of heating the upper substrate 200, the object to be joined.

[0054] The first upper adjustment part 53 is connected to either the first upper deformable part 51 or the first upper support part 52, and can adjust the height of the first upper support part 52. For example, the first upper adjustment part 53 can be connected to the first upper support part 52, and the first upper support part 52 can be lowered or raised by a motor drive. The length of the first upper deformable part 51 can be adjusted according to the change in height of the first upper support part 52. Furthermore, the first upper adjustment part 53 can be connected to the first upper deformable part 51 to adjust the height of both the first upper deformable part 51 and the first upper support part 52.

[0055] More specifically, the first upper deformable portion 51 may be in the shape of a corrugated tube. The vertical length of the first upper deformable portion 51 may vary as the corrugations fold or unfold. The first upper deformable portion 51 may be manufactured from a metallic material or an elastic material.

[0056] The diameter 'a' of the first upper deformable portion 51 can be at least 50% of the diameter 'b' of the upper substrate 200. More specifically, the first upper deformable portion 51 can be designed to be larger than the diameter 'b' of the upper substrate 200 to uniformly compress the upper substrate 200. In this case, the diameter 'c' of the first upper support portion 52 can be designed to be equal to or greater than the diameter 'a' of the first upper deformable portion 51. If the upper substrate 200 is rectangular, the diameter 'a' of the first upper deformable portion 51 can be at least 50% of the diagonal length of the upper substrate 200.

[0057] The first upper adjustment part 53 may include a first adjustment lever part 55 and a first adjustment moving part 56.

[0058] One or more first adjusting rod portions 55 are connected to the first upper deformable portion 51 or the first upper support portion 52, and can pass through the upper chamber portion 20. As an example, multiple first adjusting rod portions 55 may be spaced equally apart from each other and pass through the upper chamber portion 20 and the position adjusting portion 30. When the first adjusting rod portion 55 passes through the hole formed in the upper chamber portion 20, its left and right movement is restricted, thereby suppressing the movement of the upper deformable portion 51.

[0059] The first adjusting movable part 56 enables the first adjusting rod part 55 to move up and down. As an example, the first adjusting movable part 56 may include a first movable connecting part 561 connected to a plurality of first adjusting rod parts 55, a first movable shaft part 562 extending upward from the first movable connecting part 561, and a first movable motor part 563 threadedly engaged with the first movable shaft part 562 and driven by a motor to move the first movable shaft part 562 up and down. The first movable motor part 563 can be fixedly mounted on a separate fixture.

[0060] On the other hand, a bellows corresponding to the upper deformable part 51 is installed in the lower chamber part 10 to support the lower support part 40, and its length can be changed, thereby providing pressure to the lower substrate 100 and the upper substrate 200.

[0061] Figure 5 This is a schematic diagram illustrating the upper support portion according to the second embodiment of the present invention. (Refer to...) Figure 5 The upper support portion 50 in the second embodiment of the present invention may include a second upper deformable portion 61, a second upper supporting portion 62, and a second upper adjusting portion 63.

[0062] The second upper deformable part 61 is built into the upper chamber part 20, and its shape will deform vertically due to the pressure of the fluid. As an example, the upper deformable part 61 may be connected to the alignment adjustment part 32 installed in the upper chamber part 20 and be movable, and may expand or contract due to the fluid, thereby changing its vertical length.

[0063] The second upper support portion 62 is mounted on the second upper deformable portion 61, supports the upper substrate 200, and is capable of heating the upper substrate 200. As an example, the second upper support portion 62 may be coupled to the lower end of the second upper deformable portion 61 to adsorb the upper substrate 200, thereby fixing the upper substrate 200. The second upper support portion 62 is provided with a heating wire, which is capable of heating the upper substrate 200, the object to be joined.

[0064] The second upper adjustment part 63 is connected to the second upper deformable part 61 and can adjust the fluid volume of the second upper deformable part 61, thereby changing the vertical length of the second upper deformable part 61. As an example, when the vertical length of the second upper adjustment part 63 changes, the height of the second upper support part 62 can be adjusted.

[0065] More specifically, the second upper deformable portion 61 may be in the shape of a corrugated tube. The vertical length of the second upper deformable portion 61 may vary as the corrugations fold or unfold. The second upper deformable portion 61 may be manufactured from a metallic material or an elastic material.

[0066] The diameter 'a' of the second upper deformable portion 61 can be at least 50% of the diameter 'b' of the upper substrate 200. More specifically, the second upper deformable portion 61 can be designed to be larger than the diameter 'b' of the upper substrate 200 to uniformly compress the upper substrate 200. In this case, the diameter 'c' of the second upper support portion 62 can be designed to be equal to or greater than the diameter 'a' of the second upper deformable portion 61. If the upper substrate 200 is rectangular, the diameter 'a' of the second upper deformable portion 61 can be at least 50% of the diagonal length of the upper substrate 200.

[0067] The second upper adjustment section 63 may include a second adjustment supply section 65 and a second adjustment discharge section 66.

[0068] The second regulating supply unit 65 is connected to the second upper deformable part 61 and is capable of supplying fluid to it. As an example, the second regulating supply unit 65 may include a supply pipe 651 that passes through the upper chamber part 20 and is connected to the second upper deformable part 61, and a supply fluid part 652 that is connected to the supply pipe 651 and generates and provides fluid.

[0069] The second regulating discharge section 66 is connected to the second upper deformable section 61 and is capable of discharging fluid therein. As an example, the second regulating discharge section 66 may include a discharge pipe section 661 that passes through the upper chamber section 20 and is connected to the second upper deformable section 61, and a discharge fluid section 662 formed in the discharge pipe section 661 and adjusting the internal pressure of the second upper deformable section 61 by controlling the amount of fluid discharged.

[0070] On the other hand, the second regulating discharge section 66 can be connected to a vacuum pump section 90 that converts the lower chamber section 10 and the upper chamber section 20 into a vacuum state. For example, the vacuum pump section 90 can be connected to the third lower chamber section 13, thereby converting the sealed space into a vacuum state. Furthermore, the vacuum pump section 90 is connected to the discharge pipe section 661, enabling the discharge of fluid from the second upper deformable section 61.

[0071] The second upper adjustment portion 63 according to the second embodiment of the present invention may further include a second upper movement prevention portion 67. The second upper movement prevention portion 67 is connected to the second upper support portion 62 and penetrates the upper chamber portion 20, thereby restricting the movement of the second upper deformable portion 61. That is, a plurality of second upper movement prevention portions 67 are connected to the second upper deformable portion 61 or the second upper support portion 62 and can penetrate the upper chamber portion 20. As an example, a plurality of second upper movement prevention portions 67 may be spaced equally apart from each other and penetrate the upper chamber portion 20 and the position adjustment portion 30.

[0072] The second upper movement prevention part 67 passes through the hole formed in the upper chamber part 20 and comes into close contact with the hole in the upper chamber part 20, thereby restricting left and right movement and suppressing the movement of the upper deformable part 61. The second upper movement prevention part 67 spans the position adjustment part 30, and its own length can change. Therefore, when the second upper deformable part 61 expands, the second upper support part 62 can descend.

[0073] Figure 6 This is a flowchart illustrating a substrate processing method according to an embodiment of the present invention. (Refer to...) Figure 6 The substrate processing method according to one embodiment of the present invention will be described below.

[0074] In the substrate insertion step S10, the lower substrate 100 is mounted on the lower support portion 40, and the upper substrate 200 is mounted on the upper support portion 50, which is capable of deformation due to pressure difference. As an example, the lower support portion 40 may be mounted on the lower chamber portion 10, and the upper support portion 50 may be mounted on the upper chamber portion 20 positioned above the lower chamber portion 10. The height of the upper chamber portion 20 is adjusted by the position adjustment portion 30, thereby opening and closing the lower chamber portion 10. In the substrate insertion process, with the upper chamber portion 20 rising and the lower chamber portion 10 in an open state, the transfer robot can supply the lower substrate 100 and the upper substrate 200 to the lower support portion 40 and the upper support portion 50, respectively. The lower support portion 40 and the upper support portion 50 can respectively hold the lower substrate 100 and the upper substrate 200.

[0075] In the substrate alignment step S20, after the substrate is inserted, the lower substrate 100 is aligned with the center or reference mark of the upper substrate 200. As an example, the position adjustment unit 30 may move the upper support unit 50 along a three-axis direction to align the lower substrate 100 with the center or reference mark of the upper substrate 200.

[0076] In state transition step S30, after substrate alignment is completed, the bonding space between the lower substrate 100 and the upper substrate 200 is converted to a vacuum state. For example, when the upper chamber 20 is lowered by the position adjustment section 30 to close the upper side of the lower chamber 10, the air present inside the lower chamber 10 and the upper chamber 20 is expelled to the outside, thereby making the bonding space formed by the lower chamber 10 and the upper chamber 20 a vacuum state. This prevents poor bonding due to foreign objects.

[0077] In the substrate bonding step S40, when the working space used for bonding is converted to a vacuum state, the upper support portion 50 can apply pressure to the upper substrate 200 and the lower substrate 100 with uniform pressure through a pressure difference and bond them together. For example, when the vertical length of the upper support portion 50 extends, causing the upper substrate 200 to descend, the upper substrate 200 and the lower substrate 100 may come into close contact. At this time, an adhesive is applied between the lower substrate 100 and the upper substrate 200, and the lower support portion 40 and the upper support portion 50 heat the lower substrate 100 and the upper substrate 200, thereby enabling the adhesive to cure.

[0078] In the substrate ejection step S50, the joined lower substrate 100 and upper substrate 200 are ejected. For example, when the pressure applied to the upper support 50 ceases after a set time, external air is supplied between the lower chamber 10 and the upper chamber 20 to release the vacuum in the joining space, and the upper chamber 20 is raised by the position adjustment unit 30, thereby opening the upper side of the lower chamber 10. At this time, the adhesion between the upper support 50 and the upper substrate 200 is released, and the joined lower substrate 100 and upper substrate 200 can be placed on the lower support 40. Then, the transfer robot can move the lower substrate 100 and upper substrate 200 placed on the lower support 40.

[0079] Figure 7 This is a schematic diagram illustrating a substrate alignment process according to an embodiment of the present invention. (Refer to...) Figure 7 The substrate alignment process is described below.

[0080] In the camera insertion step S21, the camera unit 70 measures the positions of the lower substrate 100 and the upper substrate 200. For example, the camera unit 70 may be inserted into the space between the lower chamber 10 and the upper chamber 20 to measure the positions of the lower substrate 100 and the upper substrate 200. Such a camera unit 70 can measure the positions by observing the outer boundaries of the lower substrate 100 and the upper substrate 200, or it can measure the positions by using reference marks formed on the lower substrate 100 and the upper substrate 200, respectively.

[0081] In the position adjustment step S22, the position adjustment unit 30 adjusts the position of the upper substrate 200 based on the measurement values ​​of the camera unit 70. For example, while the camera unit 70 is measuring the outer boundary or reference mark of the lower substrate 100, the alignment adjustment unit 32 aligns the upper substrate 200 so that the reference mark of the upper substrate 200 can be measured. Furthermore, the camera unit 70 can observe the outer boundaries or reference marks of the lower substrate 100 and the upper substrate 200 to calculate the center-to-center deviation between the two substrates, and then align them.

[0082] In the camera return step S23, the camera unit 70 returns to its original position (S23). For example, after the upper substrate 200 is aligned, the camera unit 70 disengages from the lower chamber 10 and the upper chamber 20 and returns to its original position.

[0083] Figure 8 This is a schematic diagram illustrating the state transition process involved in one embodiment of the present invention. (Refer to...) Figure 8 The state transition process is explained as follows.

[0084] In sealing step S31, the lower chamber 10, which has a built-in lower support portion 40, and the upper chamber 20, which has a built-in upper support portion 50, are sealed. As an example, the upper chamber 20 may be lowered by the up-down adjustment portion 31 to cover the upper opening area of ​​the lower chamber 10.

[0085] In vacuum step S32, the fluid inside the lower chamber 10 and the upper chamber 20 is discharged to the outside to convert to a vacuum state. As an example, after the lower chamber 10 and the upper chamber 20 are sealed, the air present inside the lower chamber 10 and the upper chamber 20 can be discharged to the outside through the third lower chamber 13.

[0086] Figure 9 This diagram schematically illustrates the substrate bonding process performed via the upper support portion according to the first embodiment of the present invention. (Refer to...) Figure 9 The substrate bonding process is described below.

[0087] In the first adjustment step S51, the first upper adjustment part 53 adjusts the height of the first upper support part 52 so that the lower substrate 100 approaches or contacts the upper substrate 200. That is, when power is applied to the first adjustment movement part 56, the first adjustment rod part 55 descends, thereby bringing the upper substrate 200, which is mounted on the first upper support part 52 connected to the first adjustment rod part 55, into contact with the lower substrate 100. At this time, the first adjustment movement part 56 can be controlled by a pressure sensor provided on the lower support part 40 to determine the height of the upper substrate 200.

[0088] In the first bonding step S52, the first upper deformable portion 51 expands due to the pressure difference, and the lower substrate 100 and the upper substrate 200 are uniformly compressed and joined together. For example, before or after the lower substrate 100 contacts the upper substrate 200, when the internal working spaces of the lower chamber portion 10 and the upper chamber portion 20 are converted to a vacuum state, the upper deformable portion 51 expands due to the pressure difference between the working space and the upper deformable portion 51. This allows the lower substrate 100 and the upper substrate 200 to come into close contact, thereby achieving bonding. At this time, the threaded engagement portion of the first adjusting moving portion 56 loosens due to the expansion force of the first upper deformable portion 51, allowing the first upper support portion 52 to descend.

[0089] Figure 10 This diagram schematically illustrates the substrate bonding process performed via the upper support portion according to the second embodiment of the present invention. (Refer to...) Figure 10 The substrate bonding process is described below.

[0090] In the second adjustment step S61, the second upper adjustment unit 63 adjusts the height of the second upper support unit 62 so that the lower substrate 100 approaches or contacts the upper substrate 200. That is, when the second adjustment supply unit 65 supplies fluid to the second upper deformable part 61, the second upper deformable part 61 expands, extending its length in the vertical direction. As a result, the second upper support unit 62 mounted on the second upper deformable part 61 descends, causing the upper substrate 200 to contact the lower substrate 100. At this time, the second adjustment supply unit 65 can be controlled by a pressure sensor provided on the lower support part 40 to determine the height of the upper substrate 200. When the lower substrate 100 contacts the upper substrate 200, the fluid supply through the second adjustment supply unit 65 can be stopped.

[0091] In the second bonding step S62, the second upper deformable portion 61 expands due to the pressure difference, and the lower substrate 100 and the upper substrate 200 are uniformly compressed and joined together. For example, before or after the lower substrate 100 contacts the upper substrate 200, when the internal working spaces of the lower chamber portion 10 and the upper chamber portion 20 are converted to a vacuum state, the upper deformable portion 61 expands due to the pressure difference between the working space and the upper deformable portion 61. This allows the lower substrate 100 and the upper substrate 200 to come into close contact, thereby achieving bonding.

[0092] In a substrate processing apparatus and method according to an embodiment of the present invention, since the shape of the upper support portion 50 is deformed due to the pressure difference with the working space in a vacuum state when the lower support portion 40 is provided with the lower substrate 100 and the upper support portion 50 is provided with the upper substrate 200, the pressure distribution between the lower substrate 100 and the upper substrate 200 can become uniform when they are in close contact.

[0093] The invention has been described with reference to the embodiments illustrated in the accompanying drawings. However, it should be understood that these are merely examples, and those skilled in the art can make various modifications or equivalent embodiments based on the above description. Therefore, the true scope of protection of the invention should be defined according to the appended claims.

Claims

1. A substrate processing apparatus, characterized in that, include: lower chamber part; The upper chamber section opens and closes the upper side of the lower chamber section; Position adjustment unit, for adjusting the position of the upper chamber; A lower support portion is mounted on the lower chamber portion and supports the lower substrate; and An upper support portion is installed in the upper chamber portion and supports the upper substrate facing the lower substrate, and applies pressure to the upper substrate and the lower substrate.

2. The substrate processing apparatus according to claim 1, characterized in that, The upper support portion applies pressure to the upper substrate and the lower substrate through the pressure difference between the interior of the chamber portion formed by the lower chamber portion and the upper chamber portion and the upper support portion.

3. The substrate processing apparatus according to claim 1, characterized in that, The lower chamber includes: First lower chamber section; The second lower chamber portion protrudes upward from the edge of the first lower chamber portion and surrounds the lower support portion; and The third lower chamber is connected to at least one of the first lower chamber and the second lower chamber to convert it to a vacuum or atmospheric pressure state.

4. The substrate processing apparatus according to claim 1, characterized in that, The position adjustment unit includes: The height adjustment section is capable of adjusting the height of the upper chamber; and The alignment adjustment part is connected to the upper support part to align the upper substrate.

5. The substrate processing apparatus according to claim 1, characterized in that, The upper support portion includes: The first upper deformable part is built into the upper chamber part, and the shape of the first upper deformable part is deformed vertically due to the pressure of the fluid. A first upper support portion is mounted on the first upper deformable portion, supports the upper substrate, and heats the upper substrate; and The first upper adjustment part is connected to the first upper deformation part or the first upper support part, and adjusts the height of the first upper support part.

6. The substrate processing apparatus according to claim 5, characterized in that, The first upper deformable part is in the shape of a bellows.

7. The substrate processing apparatus according to claim 6, characterized in that, The diameter of the first upper deformable portion is more than 50% of the diameter of the upper substrate.

8. The substrate processing apparatus according to claim 5, characterized in that, The first upper adjustment section includes: One or more first adjusting rod portions are connected to the first upper deformable portion or the first upper support portion and penetrate the upper chamber portion; and The first adjusting moving part causes the first adjusting rod to move up and down.

9. The substrate processing apparatus according to claim 1, characterized in that, The upper support portion includes: The second upper deformable part is built into the upper chamber part, and the shape of the second upper deformable part deforms vertically due to the pressure of the fluid. The second upper support portion is mounted on the second upper deformable portion, supports the upper substrate, and heats the upper substrate; and The second upper adjustment part is connected to the second upper deformation part, and the pressure is adjusted to change the vertical length of the second upper deformation part.

10. The substrate processing apparatus according to claim 9, characterized in that, The second upper deformable part is in the shape of a bellows.

11. The substrate processing apparatus according to claim 10, characterized in that, The diameter of the second upper deformable portion is more than 50% of the diameter of the upper substrate.

12. The substrate processing apparatus according to claim 9, characterized in that, The second upper adjustment section includes: A second regulating supply unit is connected to the second upper deformable part and supplies fluid to the second upper deformable part; and The second regulating discharge section is connected to the second upper deformable section and discharges the fluid in the second upper deformable section. The second regulating discharge section is connected to a vacuum pump section that converts the upper chamber section and the lower chamber section into a vacuum state.

13. The substrate processing apparatus according to claim 9, characterized in that, The second upper adjustment section also includes: The second upper movement prevention part is connected to the second upper support part and passes through the upper cavity part, thereby restricting the movement of the second upper deformable part.

14. A substrate processing method, characterized in that, include: In the substrate insertion step, the lower substrate is mounted on the lower support portion, and the upper substrate is mounted on the upper support portion. The substrate alignment step aligns the center or reference mark of the lower substrate with that of the upper substrate; The state transition step converts the working space of the lower substrate and the upper substrate into a vacuum state; In the substrate bonding step, when the working space between the lower substrate and the upper substrate becomes a vacuum state, the upper support portion applies pressure to the upper substrate and the lower substrate through a pressure difference and bonds them together. as well as The substrate discharge step discharges the joined lower substrate and upper substrate.

15. The substrate processing method according to claim 14, characterized in that, The substrate alignment step includes: In the camera deployment step, the camera unit measures the positions of the lower substrate and the upper substrate; The position adjustment step involves the position adjustment unit adjusting the position of the upper substrate based on the measurement values ​​from the camera unit; and In the camera return step, the camera unit returns to its original position.

16. The substrate processing method according to claim 14, characterized in that, The state transition steps include: The sealing step involves sealing the lower chamber containing the lower support and the upper chamber containing the upper support; and The vacuum step involves discharging the fluid inside the lower and upper chambers to the outside to create a vacuum state.

17. The substrate processing method according to claim 14, characterized in that, The substrate bonding step includes: The first adjustment step involves adjusting the height of the first upper support portion using the first upper adjustment portion, so that the lower substrate is close to the upper substrate; and In the first bonding step, the first upper deformable part expands due to the pressure difference, causing the lower substrate and the upper substrate to bond under uniform compression.

18. The substrate processing method according to claim 14, characterized in that, The substrate bonding step includes: In the second adjustment step, when the second upper adjusting part expands the second upper deformable part, the height of the second upper supporting part is adjusted, thereby bringing the lower substrate closer to the upper substrate; and In the second bonding step, the second upper deformable part expands due to the pressure difference, causing the lower substrate and the upper substrate to bond under uniform compression.

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