Intelligent RF MEMS switch and control method thereof

Abstract

The invention provides an intelligent RF MEMS switch and a control method thereof. The intelligent RF MEMS switch comprises a self-feedback control module and at least one RF MEMS switch. The self-feedback control module judges whether the driving state of the RF MEMS switch is abnormal or not by continuously collecting contact capacitance parameters of the RF MEMS switch at different moments and converting the contact capacitance parameters of the RF MEMS switch at the different moments into contact distance parameters of the RF MEMS switch at the corresponding moments, and the self-feedback control module controls the driving state of the RF MEMS switch to be abnormal under the condition that the driving state of the RF MEMS switch is abnormal. The input voltage of the RF MEMS switch is finely adjusted. According to the application, the stress distribution of the thin film / cantilever beam in the RF MEMS switch in the continuous working process can be optimized, so that the creep process of the thin film / cantilever beam is slowed down, and finally the purposes of improving the reliability and prolonging the service life of the RF MEMS switch are achieved.

Description

Technical Field

[0001] This application relates to the field of microelectronics process technology, and in particular to an intelligent RF (Radio Frequency) MEMS (Micro Electro Mechanical Systems) switch and its control method. Background Technology

[0002] With the continuous development of wireless communication, the demand for miniaturized, low-power, and high-performance radio frequency devices is gradually increasing. As a key electronic component in MEMS switching devices that can control the signal conduction and disconnection, RF MEMS switches are suitable for microwave and millimeter-wave frequency bands. Compared with traditional semiconductor devices, they have huge advantages in insertion loss, isolation, and linearity. Their importance in future mobile communications such as 5G and military fields is increasing.

[0003] During long-term use, RF MEMS switches experience creep in the thin-film / cantilever beam configuration. The degree of creep is closely related to time, temperature, stress, and material type. Since the switching on and off of RF MEMS switches primarily relies on the mechanical reciprocating motion of the thin-film / cantilever beam, the mechanical component failures present a significant challenge to both the reliability and lifespan of RF MEMS switches compared to traditional switches. Currently, research on RF MEMS switches focuses on improving their reliability and lifespan. One technological approach is to research and develop new material systems, finding thin-film / cantilever beam materials with stronger creep resistance to improve switch reliability and lifespan. However, this approach faces new challenges, such as the significant human and financial investment required for the exploration and development of new materials, and the compatibility of new materials with existing RF MEMS switch technologies.

[0004] Therefore, how to provide an intelligent RF MEMS switch and its control method that can improve the reliability and lifespan of the RF MEMS switch without changing the original RF MEMS switch structure, size and material composition has become a key research focus for people in this field. Summary of the Invention

[0005] This application aims to at least partially address one of the technical problems in the related art.

[0006] Therefore, the first objective of this application is to propose an intelligent RF MEMS switch and its control method.

[0007] To achieve the above objectives, a first aspect of this application provides an intelligent RF MEMS switch, comprising a self-feedback control module and a switch module interconnected thereto. The switch module includes at least one RF MEMS switch, and the self-feedback control module includes:

[0008] The data acquisition unit is used to acquire the contact capacitance parameters of the RF MEMS switch at different times;

[0009] A data processing unit is used to convert the contact capacitance parameters of the RF MEMS switch at different times into the contact spacing parameters of the RF MEMS switch at the corresponding time.

[0010] The control unit is used to determine whether the driving state of the RF MEMS switch is abnormal based on the contact spacing parameters of the RF MEMS switch at different times, and to adjust the input voltage of the RF MEMS switch if the driving state of the RF MEMS switch is abnormal.

[0011] Optionally, the contact spacing parameters of the RF MEMS switch include the contact spacing and the change in contact spacing at different times. If the change in contact spacing of the RF MEMS switch exceeds a preset threshold, the control unit determines that the driving state of the RF MEMS switch is abnormal.

[0012] Optionally, the data processing unit is further configured to convert the contact spacing parameters of the RF MEMS switch at different times into the actual driving voltage of the RF MEMS switch at the corresponding time.

[0013] Optionally, the self-feedback control module further includes a storage unit, which is connected to the data acquisition unit and the data processing unit respectively, and is used to store data on the contact capacitance parameters of the RF MEMS switch, the contact spacing parameters of the RF MEMS switch, and the actual driving voltage of the RF MEMS switch.

[0014] Optionally, the self-feedback control module further includes a voltage conversion unit, which is connected to the control unit and the RF MEMS switch respectively, for receiving the control signal output by the control unit, and adjusting the input voltage of the RF MEMS switch based on the control signal and the actual driving voltage of the RF MEMS switch.

[0015] Optionally, the self-feedback control module further includes a self-detection unit, which is used to detect whether the RFMEMS switch and the self-feedback control module can start normally.

[0016] Optionally, the RF MEMS switch includes at least one of a series / parallel contact switch and a series / parallel capacitive switch.

[0017] To achieve the above objectives, a second aspect of this application provides a smart RF MEMS switch control method, comprising:

[0018] The RF MEMS switch is connected to the working circuit, and the contact capacitance parameters of the RF MEMS switch at different times before and after operation are collected.

[0019] Based on the equal relationship between the contact capacitance parameter and the contact spacing parameter of the RF MEMS switch at different times, the contact spacing parameter of the RF MEMS switch at the corresponding time is obtained.

[0020] Based on the contact spacing parameters of the RF MEMS switch at different times, it is determined whether the driving state of the RF MEMS switch is abnormal, and when the driving state of the RF MEMS switch is abnormal, the actual driving voltage of the RF MEMS switch is obtained according to the contact spacing parameters of the RF MEMS switch at the corresponding time.

[0021] The input voltage of the RF MEMS switch is adjusted based on the actual driving voltage of the RF MEMS switch.

[0022] Optionally, before the step of collecting the contact capacitance parameters at different times before and after the RF MEMS switch is in operation, the method further includes detecting the initial state of the RF MEMS switch, determining whether the RF MEMS switch is faulty based on the detection results, and replacing the RF MEMS switch when it is confirmed that the RF MEMS switch is faulty.

[0023] Optionally, the contact spacing parameters of the RF MEMS switch include the contact spacing and the change in contact spacing at different times. The step of determining whether the driving state of the RF MEMS switch is abnormal based on the contact spacing parameters of the RF MEMS switch at different times includes:

[0024] Determine whether the change in the contact spacing of the RF MEMS switch at different times exceeds a preset threshold, and confirm that the driving state of the RF MEMS switch is abnormal when the change in the contact spacing of the RF MEMS switch exceeds the preset threshold.

[0025] The intelligent RF MEMS switch and its control method provided in this application have at least the following beneficial effects:

[0026] First, this application can avoid the development and exploration of new thin film / cantilever beam materials in RF MEMS switches, and can optimize based on existing materials, saving a lot of manpower and financial resources.

[0027] Secondly, this application can significantly improve the reliability and lifespan of the switch while keeping the original RF MEMS switch device structure and size unchanged, avoiding the cumbersome design of new structures and sizes.

[0028] Third, this application can monitor the creep of the switching membrane / cantilever beam in real time through a self-feedback control module, and then make corresponding adjustments to the output drive voltage, which is a dynamic optimization process.

[0029] Fourth, the self-feedback control module of this application can be applied to RF MEMS switches of any structure and size made of any material, with great compatibility and applicability. It does not require modification based on existing types of RF MEMS switches, enabling it to be widely used to improve the reliability and lifespan of RF MEMS switches.

[0030] Additional aspects and advantages of this application will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of this application. Attached Figure Description

[0031] The above and / or additional aspects and advantages of this application will become apparent and readily understood from the following description of the embodiments taken in conjunction with the accompanying drawings, wherein:

[0032] Figure 1 This is a structural block diagram of an intelligent RF MEMS switch according to an embodiment of this application.

[0033] Figure 2 This is a structural block diagram illustrating an intelligent RF MEMS switch control method according to an embodiment of this application.

[0034] 100 Self-feedback control module; 110 Data acquisition unit; 120 Data processing unit; 130 Control unit; 140 Storage unit; 150 Voltage conversion unit; 160 Self-detection unit; 200 Switching module. Detailed Implementation

[0035] The embodiments of this application are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and intended to explain this application, and should not be construed as limiting this application.

[0036] According to a first aspect of this application, a smart RF MEMS switch is provided, such as... Figure 1 As shown, the device includes a self-feedback control module 100 and a switch module 200. The switch module 200 includes at least one RF MEMS switch, and the self-feedback control module 100 is connected to the RF MEMS switch. The self-feedback control module 100 includes a data acquisition unit 110, a data processing unit 120, and a control unit 130. The data acquisition unit 110 is used to acquire the contact capacitance parameters of the RF MEMS switch at different times. The data processing unit 120 is used to convert the contact capacitance parameters of the RF MEMS switch at different times into the contact spacing parameters of the RF MEMS switch at the corresponding times. The control unit 130 is used to determine whether the driving state of the RF MEMS switch is abnormal based on the contact spacing parameters of the RF MEMS switch at different times, and adjusts the input voltage of the RF MEMS switch if the driving state is abnormal.

[0037] Understandably, since the RF MEMS switch's thin film / cantilever beam serves as the core support and drive structure for the switch contacts, it will undergo creep under continuous electrostatic stress and temperature cycling during long-term use. This creep will directly change the initial position, motion characteristics, and electrical performance of the contacts. When turned off, the contacts cannot be completely reset due to creep, causing the contact spacing to be smaller than the initial design turn-off spacing. This makes the initial drive voltage too high for the switch after creep, further aggravating the creep process and creating a vicious cycle.

[0038] Because the data acquisition unit 110 and the data processing unit 120 are connected, the contact capacitance parameters of the RF MEMS switch collected by the data acquisition unit 110 at different times can be transmitted to the data processing unit 120 in real time. This avoids deviations in subsequent contact spacing conversion due to data delays or omissions. Especially for high-frequency operating scenarios (such as 1-10GHz RF systems), real-time transmission can ensure that the capacitance data at each sampling moment (such as 10-100ms interval) can be processed in a timely manner, accurately reflecting the dynamic state of the switch contacts.

[0039] Meanwhile, since the data processing unit 120 is connected to the control unit 130, the contact spacing parameters calculated by the data processing unit 120 based on the conversion relationship between contact capacitance parameters and contact spacing parameters at the corresponding time can be accurately fed back to the control unit 130 in a standardized data format (such as a digital signal). This eliminates the need for additional data conversion steps, reduces signal distortion or errors, and ensures that the contact spacing data parameters acquired by the control unit 130 are consistent with the actual state of the switch. Therefore, based on the comparison results between the contact spacing parameters at different times and the initial contact spacing parameters, the control unit 130 can determine whether the driving state of the RF MEMS switch has become abnormal.

[0040] It should be noted that the abnormal drive state of the RF MEMS switch refers to the fact that the diaphragm / cantilever beam, as the core support and drive structure of the contact, undergoes creep under continuous electrostatic stress and temperature cycling during long-term use. This creep, or slow plastic deformation, directly alters the initial position, motion characteristics, and electrical performance of the contacts. Long-term accumulated creep continuously deteriorates the relationship between the drive voltage and the contact spacing, ultimately causing the RF MEMS switch to be unable to maintain normal on / off states, leading to switch performance failure. For example, when the RF MEMS switch is on, the diaphragm / cantilever beam undergoes irreversible deformation due to long-term electrostatic attraction. When off, the creep prevents complete reset, causing the initial contact spacing (compared to the undriven state) to be smaller than the designed off spacing.

[0041] Therefore, when the control unit 130 determines that the driving state of the RF MEMS switch is abnormal, the control unit 130 is also used to adaptively adjust the input voltage of the RF MEMS switch based on the comparison results of the contact spacing parameters at different times with the contact spacing parameters at the initial time, so as to maintain the actual driving voltage required when the RF MEMS switch is turned on. For example, the control unit 130 can control the reduction of the driving voltage to reduce the suction force, thereby avoiding excessive stress on the membrane / cantilever beam caused by excessive driving voltage, which would further aggravate the creep process of the membrane / cantilever beam.

[0042] After determining that the driving state of the RF MEMS switch is abnormal, the control unit 130 triggers a voltage adjustment mechanism by outputting a control signal to precisely correct the input voltage of the RF MEMS switch until the contact capacitance parameters acquired by the data acquisition unit 110 are processed and the contact spacing parameters return to meet the preset threshold range requirements, thereby achieving closed-loop calibration of the switch driving state.

[0043] Compared to a fixed input voltage, the real-time adjustment of the input voltage by the control unit 130 greatly reduces the stress on the thin film / cantilever beam, slows down the creep process of the thin film / cantilever beam, and thus improves the reliability and lifespan of the RF MEMS switch during long-term operation.

[0044] In some embodiments, the contact spacing parameters of the RF MEMS switch include the contact spacing and the amount of change of the contact spacing at different times, and the control unit 130 determines that the driving state of the RF MEMS switch is abnormal when the amount of change of the contact spacing of the RF MEMS switch exceeds a preset threshold.

[0045] Understandably, the contact spacing parameters of the RF MEMS switch include the contact spacing at different times and the change in contact spacing. The change in contact spacing at different times refers to the change in contact spacing relative to the initial contact spacing. Therefore, the control unit 130 can determine whether the driving state of the RF MEMS switch is abnormal based on whether the change in contact spacing exceeds a preset threshold, and adaptively adjust the input voltage of the RF MEMS switch if the driving state is abnormal.

[0046] In some embodiments, the data processing unit 120 is further configured to convert the contact spacing parameters of the RF MEMS switch at different times into the actual driving voltage of the RF MEMS switch at the corresponding time.

[0047] Understandably, since the data processing unit 120 can also convert the contact spacing parameters of the RF MEMS switch at different times into the actual driving voltage of the RF MEMS switch at the corresponding time, the control unit 130 can adjust the input voltage of the RF MEMS switch according to the actual driving voltage of the RF MEMS switch at the corresponding time when it is determined that the driving state of the RF MEMS switch is abnormal.

[0048] In some embodiments, the self-feedback control module 100 further includes a storage unit 140, which is connected to the data acquisition unit 110 and the data processing unit 120 respectively, and is used to store data on the contact capacitance parameters of the RF MEMS switch, the contact spacing parameters of the RF MEMS switch, and the actual driving voltage of the RF MEMS switch.

[0049] Understandably, since the storage unit 140 is connected to the data acquisition unit 110, the contact capacitance parameters (raw data) acquired in real time by the data acquisition unit 110 can be completely and in real time stored in the storage unit 140. Simultaneously, since the storage unit 140 is also connected to the data processing unit 120, the data processing unit 120 can also obtain the contact capacitance parameters of the RF MEMS switch at any given time through the storage unit 140, and perform corresponding conversions to obtain the contact spacing parameters and the actual driving voltage parameters of the RF MEMS switch at the corresponding time. Furthermore, the data processing unit 120 can further completely and in real time store the contact spacing parameters and the actual driving voltage parameters of the RF MEMS switch in the storage unit 140.

[0050] Furthermore, the control unit 130 is also connected to the storage unit 140, so that the control unit 130 can also obtain the contact spacing parameters of the RF MEMS switch at any time through the storage unit 140, thereby judging whether the driving state of the RF MEMS is abnormal, and if the driving state of the RF MEMS switch is judged to be abnormal, the control unit 130 can adjust the input voltage of the RF MEMS switch according to the actual driving voltage of the RF MEMS switch at the corresponding time stored in the storage unit 140.

[0051] It should be noted that the core function of the above-mentioned connection design of storage unit 140 is to build a "data traceability chain" for the entire life cycle of RF MEMS switch, which not only avoids the loss of original acquired data due to real-time processing, but also ensures that the processed data corresponds one-to-one with the original data, providing complete data support for subsequent analysis.

[0052] In some embodiments, the self-feedback control module 100 further includes a voltage conversion unit 150, which is connected to the control unit 130 and the RF MEMS switch respectively, for receiving the control signal output by the control unit 130, and adjusting the input voltage of the RF MEMS switch based on the control signal and the actual drive voltage of the RF MEMS switch.

[0053] It is understandable that, since the voltage conversion unit 150 is connected to the control unit 130 and the RF MEMS switch respectively, when the control unit 130 determines that the driving state of the RF MEMS switch is abnormal, it can output a corresponding control signal to the voltage conversion unit 150 according to the actual driving voltage of the RF MEMS switch at the corresponding moment. This allows the voltage conversion unit 150 to adjust the input voltage of the RF MEMS switch based on the received control signal, thereby achieving precise correction of the input voltage of the RF MEMS switch. This slows down the creep rate of the thin film / cantilever beam inside the RF MEMS switch, ultimately improving the reliability and lifespan of the RF MEMS switch.

[0054] In some embodiments, the self-feedback control module 100 further includes a self-detection unit 160, which is used to detect whether the RF MEMS switch and the self-feedback control module 100 can start normally.

[0055] Understandably, since the self-testing unit 160 can detect whether the RF MEMS switch and the self-feedback control module 100 can start normally, the initial faults of the core components can be detected in advance before the device is put into operation.

[0056] Specifically, on the one hand, for RF MEMS switches, the self-testing unit 160 can collect the initial contact capacitance parameters to determine whether the corresponding contact spacing is within the standard range, such as whether the initial contact spacing during conduction meets the design value and whether the initial contact spacing during turn-off has no risk of sticking, etc., to quickly identify whether the switch has factory defects, transportation damage or oxidation failure after long-term storage, and prevent the failure of the switch from causing RF signal attenuation, isolation deterioration, or even affecting the normal operation of the entire RF link after it is connected to the working circuit.

[0057] On the other hand, for the self-feedback control module 100, the self-detection unit 160 can perform start-up verification on the signal acquisition capability of the data acquisition unit 110, such as whether it can normally acquire the contact capacitance parameters, the parameter conversion function of the data processing unit 120, such as whether it can accurately convert the contact capacitance parameters into contact spacing parameters, and the command output status of the control unit 130, so as to avoid the risk of failure of a certain unit of the module leading to the inability to monitor the status or incorrect voltage adjustment, thus forming an operational risk of the working circuit.

[0058] In some embodiments, the RF MEMS switch includes at least one of a series / parallel contact switch and a series / parallel capacitive switch.

[0059] It is understandable that series / parallel contact switches achieve conduction through physical contact of their internal metal contacts, while series / parallel capacitive switches rely on gap capacitance to couple or isolate signals. Since RF MEMS switches encompass multiple compatible designs of both series / parallel contact and series / parallel capacitive types, the core objective is to enable the self-feedback control module 100 to adapt to the performance requirements of different RF scenarios. Through the data conversion between capacitance, gap, and voltage in the self-feedback control module 100, precise control of the RF MEMS switch is achieved, ultimately broadening the application boundaries of the device and ensuring control reliability in different scenarios.

[0060] According to a second aspect of this application, an intelligent feedback control method for RF MEMS switches is provided, such as... Figure 2 As shown, it includes the following steps:

[0061] S1, connect the RF MEMS switch to the working circuit and collect the contact capacitance parameters at different times before and after the RF MEMS switch is working;

[0062] S2, Based on the equal relationship between the contact capacitance parameter and the contact spacing parameter of the RF MEMS switch at different times, obtain the contact spacing parameter of the RF MEMS switch at the corresponding time.

[0063] S3. Based on the contact spacing parameters of the RF MEMS switch at different times, determine whether the driving state of the RF MEMS switch is abnormal, and when the driving state of the RF MEMS switch is abnormal, obtain the actual driving voltage of the RF MEMS switch according to the contact spacing parameters of the RF MEMS switch at the corresponding time.

[0064] S4, adjust the input voltage of the RF MEMS switch based on the actual drive voltage of the RF MEMS switch.

[0065] Understandably, since the diaphragm / cantilever beam of the RF MEMS switch serves as the core support and drive structure for the switch contacts, it will undergo creep under continuous electrostatic stress and temperature cycling during long-term use. This creep will directly change the initial position, motion characteristics, and electrical performance of the contacts. When turned off, the creep cannot completely reset the contacts, causing the contact spacing to be smaller than the designed turn-off spacing. This makes the initial drive voltage too high for the switch after creep, and the creep of the diaphragm / cantilever beam will be aggravated under greater stress, ultimately leading to the failure of the RF MEMS switch.

[0066] To optimize the stress distribution of the thin-film / cantilever beam during continuous operation, thereby mitigating its creep process and ultimately improving the reliability and lifespan of the RF MEMS switch, this application first collects the contact capacitance parameters of the RF MEMS switch at different times before and after operation. This obtains both the initial reference state of the RF MEMS switch and captures the dynamic changes during operation, providing benchmark and comparison data for subsequent anomaly detection. Then, based on the equivalence between the contact capacitance parameters and the contact spacing parameters, the contact spacing parameters of the RF MEMS switch at corresponding times are obtained. This allows the contact capacitance parameters to be converted into contact spacing parameters that intuitively reflect the switch state, thereby enabling quantitative monitoring of the RF MEMS switch's drive state and significantly improving the accuracy of subsequent RF MEMS switch drive state judgment. Next, based on the comparison results of the contact spacing parameters at different times with the initial contact spacing parameters, it is possible to determine whether the RF MEMS switch's drive state is abnormal, achieving accurate identification of drive state anomalies. Simultaneously, by combining the contact spacing parameters with the actual drive voltage, a targeted adjustment is provided for subsequent adjustments, avoiding blind voltage adjustment. Finally, the input voltage of the RF MEMS switch is adjusted based on the actual driving voltage obtained, ensuring that the adjustment direction and magnitude are precisely matched to the cause of the abnormality, and finally the RF MEMS switch is brought back to the normal driving state.

[0067] In some embodiments, before collecting the contact capacitance parameters at different times before and after the RF MEMS switch is in operation, step S1 further includes detecting the initial state of the RF MEMS switch, determining whether the RF MEMS switch is faulty based on the detection results, and replacing the RF MEMS switch when it is confirmed that the RF MEMS switch is faulty.

[0068] In some embodiments, in the step of connecting the RF MEMS switch to the working circuit, a plurality of RF MEMS switches are exposed, and the RF MEMS switches include at least one of series / parallel contact switches and series / parallel capacitive switches.

[0069] It should be noted that the foregoing explanation of the intelligent RF MEMS switch embodiment also applies to the intelligent feedback control method of the RF MEMS switch in this embodiment, and will not be repeated here.

[0070] In summary, this application provides an intelligent RF MEMS switch and its control method, including a self-feedback control module and at least one RF MEMS switch. The self-feedback control module continuously collects the contact capacitance parameters of the RF MEMS switch at different times and converts these parameters into corresponding contact spacing parameters to determine if the RF MEMS switch's driving state is abnormal. If an abnormality occurs, the module adjusts the input voltage of the RF MEMS switch. This application can optimize the stress distribution of the thin film / cantilever beam within the RF MEMS switch during continuous operation, thereby mitigating its creep process and ultimately improving the reliability and lifespan of the RF MEMS switch.

[0071] In the foregoing descriptions of the embodiments, the terms "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example, which are included in at least one embodiment or example of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0072] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.

Claims

1. An intelligent RF MEMS switch, characterized by The self-feedback control module and the switch module are connected to each other, the switch module comprises at least one RF MEMS switch, and the self-feedback control module comprises: a data acquisition unit configured to acquire contact capacitance parameters of the RF MEMS switch at different time points; a data processing unit configured to convert the contact capacitance parameters of the RF MEMS switch at different time points into contact spacing parameters of the RF MEMS switch at corresponding time points; a control unit configured to determine whether the driving state of the RF MEMS switch is abnormal according to the contact spacing parameters of the RF MEMS switch at different time points, and adjust the input voltage of the RF MEMS switch if the driving state of the RF MEMS switch is abnormal.

2. The smart RF MEMS switch of claim 1, wherein, The contact spacing parameters of the RF MEMS switch comprise contact spacing and a contact spacing change amount of the RF MEMS switch at different time points, and the control unit determines that the driving state of the RF MEMS switch is abnormal if the contact spacing change amount of the RF MEMS switch exceeds a preset threshold.

3. The smart RF MEMS switch of claim 1, wherein, The data processing unit is further configured to convert the contact spacing parameters of the RF MEMS switch at different time points into actual driving voltages of the RF MEMS switch at corresponding time points.

4. The smart RF MEMS switch of claim 3, wherein, The self-feedback control module further comprises a storage unit connected to the data acquisition unit and the data processing unit, respectively, and configured to store data of the contact capacitance parameters of the RF MEMS switch, the contact spacing parameters of the RF MEMS switch, and the actual driving voltages of the RF MEMS switch.

5. The smart RF MEMS switch of claim 3, wherein, The self-feedback control module further comprises a voltage conversion unit connected to the control unit and the RF MEMS switch, respectively, and configured to receive a control signal output by the control unit, and adjust the input voltage of the RF MEMS switch based on the control signal and the actual driving voltage of the RF MEMS switch.

6. The smart RF MEMS switch of claim 1, wherein, The self-feedback control module further comprises a self-detection unit configured to detect whether the RF MEMS switch and the self-feedback control module can be normally started.

7. The smart RF MEMS switch of claim 1, wherein, The RF MEMS switch comprises at least one of a series / parallel contact switch and a series / parallel capacitive switch.

8. A method of controlling an intelligent RF MEMS switch, characterized by, comprising: connecting the RF MEMS switch to a working circuit, and acquiring contact capacitance parameters of the RF MEMS switch at different time points before and after the RF MEMS switch works; obtaining contact spacing parameters of the RF MEMS switch at corresponding time points based on an equivalent relationship between the contact capacitance parameters and the contact spacing parameters of the RF MEMS switch at different time points; and determining whether the driving state of the RF MEMS switch is abnormal based on the contact spacing parameters of the RF MEMS switch at different time points, and when the driving state of the RF MEMS switch is abnormal, obtaining the actual driving voltage of the RF MEMS switch according to the contact spacing parameters of the RF MEMS switch at the corresponding time point; adjusting the input voltage of the RF MEMS switch based on the actual driving voltage of the RF MEMS switch.

9. The smart RF MEMS switch control method of claim 8, wherein, The method further comprises, before the step of collecting the contact capacitance parameters of the RF MEMS switch at different time points before and after the operation of the RF MEMS switch, detecting the initial state of the RF MEMS switch, determining whether the RF MEMS switch is invalid based on the detection result, and replacing the RF MEMS switch when it is determined that the RF MEMS switch is invalid.

10. The smart RF MEMS switch control method of claim 8, wherein, The contact spacing parameters of the RF MEMS switch include the contact spacing and the contact spacing change amount of the RF MEMS switch at different time points, and the step of determining whether the driving state of the RF MEMS switch is abnormal based on the contact spacing parameters of the RF MEMS switch at different time points comprises: determining whether the contact spacing change amount of the RF MEMS switch at different time points exceeds a preset threshold, and determining that the driving state of the RF MEMS switch is abnormal when the contact spacing change amount of the RF MEMS switch exceeds the preset threshold.

Images