Method for repairing thin film transistor with same-layer structure of metal layer and ITO (Indium Tin Oxide)

Abstract

The invention provides a method for repairing a thin film transistor with a metal layer and an ITO (Indium Tin Oxide) on the same layer, and the thin film transistor sequentially comprises a glass panel, an M1 metal layer, a first insulating layer, an M2 metal layer, a first ITO film layer, a second insulating layer and a second ITO film layer from bottom to top, the repairing method for the broken M2 metal wire comprises the following steps: performing nano-silver colloid repairing on the broken metal wire generated in the previous M2 metal layer manufacturing process when the first ITO film layer manufacturing process is performed; laser is used for cutting the lap joint part of the nano-silver colloid and the first ITO film layer, so that an isolation space is formed between the nano-silver colloid and the first ITO film layer. According to the invention, in the thin film transistor, when the metal film layer and the ITO film layer are in the same layer, the metal broken line of the previous process is repaired on the ITO film layer of the later process, and the signal abnormity caused by the short circuit problem after repairing is avoided.

Description

Technical Field

[0001] This invention belongs to the technical field of thin-film transistors, specifically referring to a repair method for a thin-film transistor with a metal layer and ITO co-layer structure. Background Technology

[0002] In the fabrication process of thin-film transistors (TFTs), dust issues often lead to errors in pattern definition or defects in the film layer, as dust residue directly affects process precision. Particularly in the metal film layer process, the presence of dust can easily cause metal wire breaks, resulting in abnormal final patterns. These abnormalities directly interfere with transistor performance, ultimately causing product failure.

[0003] Currently, the industry typically uses laser repair equipment to repair such broken lines. The conventional repair method involves bridging the broken line with nano-silver paste, reconnecting the two ends to restore normal signal transmission. However, with continuous updates in panel product design and process optimization, the emergence of new neutral density mask (NDD) machines has challenged traditional broken line repair methods. These new designs optimize the processing technology, reducing three thin-film coating processes while maintaining product performance, thus effectively lowering production costs. However, this new design also presents new technical challenges. In traditional designs, there are usually insulating and planarization layers separating the metal film and the ITO film. The new design places the metal film and ITO film on the same layer. If the traditional nano-silver paste repair method is used, it may cause a short circuit between the silver paste and the ITO in subsequent processes. This abnormal overlap can lead to signal abnormalities between the metal line and the ITO, resulting in functional problems and ultimately product scrap. Summary of the Invention

[0004] The technical problem to be solved by the present invention is to provide a repair method for a thin film transistor with a metal layer and an ITO co-layer structure.

[0005] This invention is implemented as follows: a repair method for a thin-film transistor with a metal layer and ITO in the same layer, wherein the thin-film transistor comprises, from bottom to top: a glass panel, an M1 metal layer, a first insulating layer, an M2 metal layer, a first ITO film layer, a second insulating layer, and a second ITO film layer, wherein the M2 metal layer and the first ITO layer are in the same layer. The repair method for when the M2 metal line breaks during the first ITO film layer fabrication process includes the following steps: Step 10: Repairing the broken metal line caused by the previous M2 metal layer fabrication process with nano-silver paste during the first ITO film layer fabrication process; Step 20: Using a laser to cut the overlapping portion between the nano-silver paste and the first ITO film layer, creating an isolation space between the nano-silver paste and the first ITO film layer. Furthermore, the laser is a DUV laser source.

[0006] The present invention has the following advantages: In the novel thin film structure design, with the metal film layer and the ITO film layer in the same thin film structure, the metal breaks generated in the M2 metal layer thin film process can be repaired during the ITO thin film process without causing signal abnormalities or damage to the underlying film layer, thereby reducing product defects and improving product yield. Attached Figure Description

[0007] The present invention will be further described below with reference to the accompanying drawings and embodiments.

[0008] Figure 1 This is a schematic diagram of the thin-film transistor structure of the present invention; Figure 2 This is a flowchart illustrating the execution process of the method of the present invention. Detailed Implementation

[0009] like Figure 1 The diagram shows the thin-film process structure of the Array novel thin-film transistor design, which, from bottom to top, includes: a glass panel 1, an M1 metal layer 2, a first insulating layer 3, an M2 metal layer 4, a first ITO film layer 5, a second insulating layer 6, and a second ITO film layer 7. The M2 metal layer 4 and the first ITO layer 5 are on the same layer. The target layer for repair is the M2 metal layer 4. If nano-silver paste is sprayed onto the M2 metal line using conventional nano-silver paste repair methods, the silver paste will overlap with the ITO in the next process because the first ITO film layer and the M2 metal layer are designed as a single thin-film structure. This will cause a short circuit between the M2 metal line and the ITO, resulting in abnormal product signals and ultimately product failure and scrapping.

[0010] Therefore, the repair solution of the present invention is as follows: Figure 2 As shown, it can be divided into two steps: Step 10: Repair the broken metal wires produced in the previous M2 metal layer 4 process by using nano silver paste during the first ITO film layer 5 process; Step 20: Use a laser to cut the overlapping part between the nano silver paste and the first ITO film layer 5 to form an isolation space between the nano silver paste and the first ITO film layer 5, wherein the laser is preferably a DUV laser source.

[0011] The repair principle of this invention is to first bridge the broken metal wires in the previous process with nano-silver paste during the first ITO thin film process, and then use a DUV laser light source to cut the short circuit between the silver paste and the ITO body, so that the silver paste and ITO form an isolation space and the energy does not damage the underlying film layer.

[0012] The repair inspection method of the present invention is to perform a panel assembly and lighting test after repair. If the screen lights up normally and there are no other abnormalities, it indicates that the repair is successful and the defect is replaced with a good product.

[0013] This invention enables the design of novel thin film structures in which the metal film layer and the ITO film layer are in the same thin film layer. This allows for the repair of metal wire breaks in the metal film process before the ITO film process without damaging the underlying ITO film layer. This allows defective products to be restored to normal products, thereby recovering product defects and improving product yield.

[0014] While specific embodiments of the present invention have been described above, those skilled in the art should understand that the specific embodiments described are merely illustrative and not intended to limit the scope of the present invention. Equivalent modifications and variations made by those skilled in the art in accordance with the spirit of the present invention should be covered within the scope of protection of the claims of the present invention.

Claims

1. A method for repairing a thin-film transistor with a metal layer and an ITO co-layer structure, wherein the thin-film transistor comprises, from bottom to top: The material comprises a glass panel, an M1 metal layer, a first insulating layer, an M2 metal layer, a first ITO film layer, a second insulating layer, and a second ITO film layer, wherein the M2 metal layer and the first ITO layer are co-layered. The method for repairing a broken M2 metal wire during the first ITO film layer manufacturing process includes the following steps: Step 10: During the first ITO film layer process, repair the broken metal wires caused by the previous M2 metal layer process with nano silver paste. Step 20: Use a laser to cut the overlapping portion of the nano-silver paste and the first ITO film layer, so that an isolation space is formed between the nano-silver paste and the first ITO film layer.

2. The repair method for a thin-film transistor with a metal layer and ITO co-layer structure according to claim 1, characterized in that: The laser is a DUV laser source.

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