High-voltage-withstanding large-current low-stray-inductance power semiconductor module

Abstract

The invention relates to a high-voltage-withstanding large-current low-stray-inductance power semiconductor module which comprises a shell which is of a hollow structure with an opening in the upper end. A first terminal assembly, a second terminal assembly, a first substrate and a second substrate are arranged in the shell; the first terminal assembly comprises a first plastic package structure and a first terminal embedded in the first plastic package structure; the second terminal assembly comprises a second plastic package structure and a second terminal embedded in the second plastic package structure. Because the first terminal and the second terminal are wrapped by the plastic package structure, the creepage distance and the electrical gap can be increased, the withstand voltage and the insulation are greatly improved, the withstand voltage can reach 3300V, the insulation can bear 6000V, and the high-voltage and high-current connector is suitable for high-voltage and high-current use scenes. The first terminal assembly and the second terminal assembly are clamped in the shell after being subjected to integral injection molding, the first terminal assembly and the second terminal assembly can be preliminarily positioned and installed, the first fixing part and the first substrate can be conveniently connected, the second fixing part and the first substrate can be conveniently connected, and production and installation are facilitated.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor, in particular to a high-voltage large-current low-stray-inductance power semiconductor module. BACKGROUND

[0002] The use scenarios such as wind energy, high-voltage power transmission, rail transit, photovoltaic energy storage, and special vehicles require higher voltage and current.

[0003] The current power module voltage level is mainly below 2000V, the current output is below 1000A, the insulation withstand voltage is below 3000V, and the stray inductance in the circuit is about 15-20nH. If applied to high-voltage high-current scenarios, there will be problems such as large volume, easy breakdown, high conduction loss, and serious heating.

[0004] It should be noted that the information disclosed in the above background section is only used to strengthen the understanding of the background of the present disclosure, and therefore can include information that does not constitute prior art known to those of ordinary skill in the art. SUMMARY

[0005] In view of the deficiencies of the prior art, the embodiments of the present application disclose a high-voltage large-current low-stray-inductance power semiconductor module.

[0006] The technical scheme adopted by the present application is as follows: The high-voltage large-current low-stray-inductance power semiconductor module comprises an outer shell, which is a hollow structure with an open upper end; a first terminal assembly, a second terminal assembly, a first substrate, and a second substrate are arranged in the outer shell; the first substrate and the second substrate are arranged on the inner bottom of the outer shell, the first substrate is located on the side of the second substrate, and the first substrate is electrically connected to the second substrate; the first terminal assembly comprises a first plastic packaging structure and a first terminal embedded in the first plastic packaging structure; the first plastic packaging structure is clamped in the outer shell and located on the upper end of the second substrate; the first end of the first terminal is exposed on the side of the first plastic packaging structure away from the horizontal axis of the outer shell and extends towards the outside of the outer shell, and the first end is clamped on the upper end of the outer shell; the first fixed part of the first terminal is exposed on the side of the first plastic packaging structure close to the horizontal axis of the outer shell and is electrically connected to the first substrate; the second terminal assembly comprises a second plastic packaging structure and a second terminal embedded in the second plastic packaging structure; the second plastic packaging structure is clamped in the outer shell and clamped into the upper end of the first plastic packaging structure; the second end of the second terminal is exposed on the upper end of the second plastic packaging structure and extends in the opposite direction of the first end, and the second end is clamped on the upper end of the second plastic packaging structure; the second fixed part of the second terminal is exposed on the side of the second plastic packaging structure close to the horizontal axis of the outer shell and is electrically connected to the second substrate through the first plastic packaging structure; wherein the part of the second terminal located in the second plastic packaging structure overlaps the part of the first terminal located in the first plastic packaging structure.

[0007] Further, the first terminal comprises a first end portion, a first connecting portion and a first fixing portion connected in sequence; the first connecting portion is embedded in the first plastic sealing structure which is in the shape of a right angle; the first connecting portion comprises a first portion arranged vertically and a second portion arranged horizontally, the first end of the first portion is connected to the first end portion, the second end of the first portion is connected to the first end of the second portion, and the second end of the second portion is connected to the first end of the first fixing portion; the second terminal comprises a second end portion, a second connecting portion and a second fixing portion connected in sequence; the second connecting portion is embedded in the second plastic sealing structure which is in the shape of a square; the second connecting portion comprises a third portion in the shape of a right angle and a fourth portion in the shape of a right angle, the first end of the third portion is connected to the second end portion, the second end of the third portion is connected to the first end of the fourth portion, and the third portion is located at one end of the fourth portion close to the transverse axis of the shell; the second end of the fourth portion is connected to the first end of the second fixing portion, and the fourth portion overlaps the corresponding portions of the first portion and the second portion; the second plastic sealing structure is provided with a first groove at the upper end of the third portion.

[0008] Further, the first plastic sealing structure is provided with a first clamping portion on both sides, the first clamping portion is clamped into the inner wall of both sides of the shell; the second plastic sealing structure is provided with a second clamping portion on both sides, the second clamping portion is clamped into the inner wall of both sides of the shell; the first plastic sealing structure is provided with a second groove on one side close to the transverse axis of the shell, the second groove is used for the second fixing portion to pass through; the power semiconductor module further comprises a cover plate, the cover plate is provided with a third clamping portion on both sides, the third clamping portion is clamped into the inner wall of both sides of the shell, and the cover plate covers the opening between the shell and the second terminal assembly.

[0009] Further, the first substrate has two blocks which are arranged at intervals along the width direction of the shell; the first substrate is provided with a first connecting area and a second connecting area arranged at intervals, the first substrate has two first connecting areas, and the second connecting area is located between the two first connecting areas; the second end of the first fixing portion is connected to one side of the first connecting area close to the transverse axis of the shell; a plurality of first chips are arranged on the first connecting area and are bonded to the second connecting area; the second substrate has two blocks which are bonded to each other and arranged at intervals along the width direction of the shell; the second substrate is provided with a fifth connecting area and a sixth connecting area arranged at intervals; the fifth connecting area is provided with a first opening away from one side of the transverse axis of the shell; the sixth connecting area is located in the first opening; the second connecting area is bonded to the fifth connecting area; a plurality of second chips are arranged on both sides of the fifth connecting area and are bonded to the sixth connecting area; and the second end of the second fixing portion is connected to one side of the sixth connecting area close to the transverse axis of the shell.

[0010] Further, the second connecting area is provided with a second opening at one end away from the lateral axis of the shell, the third connecting area and the fourth connecting area are arranged on the first substrate in the second opening, the gate of the first chip is bonded to the third connecting area, and the power supply of the first chip is bonded to the fourth connecting area; the sixth connecting area is provided with a third opening at one end away from the lateral axis of the shell, the seventh connecting area and the eighth connecting area are arranged on the second substrate in the third opening, the gate of the second chip is bonded to the seventh connecting area, and the power supply of the second chip is bonded to the eighth connecting area.

[0011] Further, the first end of the first signal copper bar passes through the shell and is exposed at the upper end of the shell, the second end of the first signal copper bar is connected to the third connecting areas of the two first substrates; the first end of the second signal copper bar passes through the shell and is exposed at the upper end of the shell, the second end of the second signal copper bar is connected to the fourth connecting areas of the two first substrates; the first end of the third signal copper bar passes through the shell and is exposed at the upper end of the shell, the second end of the third signal copper bar is connected to the seventh connecting areas of the two second substrates; the first end of the fourth signal copper bar passes through the shell and is exposed at the upper end of the shell, the second end of the fourth signal copper bar is connected to the eighth connecting areas of the two second substrates; the first end of the fifth signal copper bar is clamped at the upper end of the shell, and the second end of the fifth signal copper bar is connected to the fourth side surface; the first end of the sixth signal copper bar is clamped at the upper end of the shell, and the second end of the sixth signal copper bar is connected to the second side surface.

[0012] Further, the power semiconductor module further comprises a third terminal, the first end of the third terminal passes through and is clamped at the upper end of the shell, and the second end of the third terminal is connected to one side of the second connecting area away from the lateral axis of the shell; the first end of the seventh signal copper bar passes through the shell and is exposed at the upper end of the shell, and the second end of the seventh signal copper bar is connected to the side surface of the third terminal; the ninth connecting area is further arranged on the second substrate, the ninth connecting area is located at one end of the fifth connecting area away from the lateral axis of the shell and is arranged in isolation from other connecting areas, an ntc temperature sensor is arranged on the ninth connecting area, the first end of the eighth signal copper bar passes through the shell and is exposed at the upper end of the shell, and the second end of the eighth signal copper bar is connected to the ninth connecting area.

[0013] Further, the power semiconductor module further comprises a bottom plate, the bottom plate is screw-connected to the lower end of the shell, the lower end of the first substrate is connected to the bottom plate, and the lower end of the second substrate is connected to the bottom plate.

[0014] Further technical solutions are that the first substrate and the second substrate adopt high-voltage ceramic substrates, the shell, the first plastic encapsulation structure, the second plastic encapsulation structure and the cover plate adopt the highest grade CTI plastic; the first terminal assembly is integrally injection molded with the first plastic encapsulation structure, and the second terminal assembly is integrally injection molded with the second plastic encapsulation structure; the first signal copper bar, the second signal copper bar, the third signal copper bar, the fourth signal copper bar, the seventh signal copper bar and the eighth signal copper bar are integrally injection molded with the shell.

[0015] Further technical solutions are that the first chip and the second chip are sic chips, 14 first chips are connected in parallel on the first substrate, and 14 second chips are connected in parallel on the second substrate.

[0016] The beneficial effects of the embodiment of the present application are as follows: (1) The high-voltage large-current low-stray inductance power semiconductor module of the embodiment of the present application can increase the creepage distance and the electrical clearance by taking the first terminal and the second terminal as two separate parts, so that the withstand voltage and the insulation are greatly improved, the withstand voltage can reach 3300V, the insulation can withstand 6000V, and it is suitable for high-voltage and high-current use scenarios. The first terminal assembly and the second terminal assembly are integrally injection molded and then clamped in the shell, which can preliminarily position and install the first terminal assembly and the second terminal assembly, facilitate the connection of the first fixed part and the first substrate and the connection of the second fixed part and the first substrate, and also facilitate production and installation.

[0017] (2) Further, the second terminal assembly is located in the right angle of the first terminal assembly, so that the parts wrapped by the plastic encapsulation structure of the first terminal and the second terminal overlap and the current directions are opposite, the first connection area and the second connection area are adjacent and the current directions are opposite by designing the current path, the fifth connection area and the sixth connection area are adjacent and the current directions are opposite, the magnetic field is cancelled by the proximity effect between the terminals and the connection areas, the stray inductance is reduced, the stray inductance is reduced to 10nH, and at the same time, high-thermal-conductivity bottom plates and high-voltage ceramic substrates are adopted to achieve good heat dissipation and ensure high-power output. Up to 28 sic chips can be connected in parallel on the bridge arm formed by the two substrates, and the outflow capacity can be up to 1500A. BRIEF DESCRIPTION OF DRAWINGS

[0018] Figure 1 It is an exploded view of the high-voltage large-current low-stray inductance power semiconductor module of the present application.

[0019] Figure 2 It is a cross-sectional view of the first terminal assembly and the second terminal assembly in the high-voltage large-current low-stray inductance power semiconductor module of the present application.

[0020] Figure 3It is a schematic view of the top structure of the high-voltage large-current low-stray power semiconductor module of the present application.

[0021] Figure 4 It is a schematic view of the top structure of the high-voltage large-current low-stray power semiconductor module of the present application after removing the cover plate.

[0022] Figure 5 It is a schematic view of the top structure of the high-voltage large-current low-stray power semiconductor module of the present application after removing the cover plate, the first terminal assembly and the second terminal assembly.

[0023] Figure 6 It is an isometric view of the bottom plate, the first substrate and the second substrate of the high-voltage large-current low-stray power semiconductor module of the present application.

[0024] In the figure: 1, housing; 2, first terminal; 21, first end; 22, first connecting part; 221, first part; 222, second part; 23, first fixing part; 24, first plastic package structure; 241, second groove; 242, first buckle; 3, second terminal; 31, second end; 32, second connecting part; 321, third part; 322, fourth part; 33, second fixing part; 34, second plastic package structure; 341, first groove; 342, second buckle; 4, first substrate; 41, first connecting area; 42, second connecting area; 421, second opening; 43, third connecting area; 44, fourth connecting area; 45, first chip; 5, second substrate; 51, fifth connecting area; 511, first opening; 52, sixth connecting area; 521, third opening; 53, seventh connecting area; 54, eighth connecting area; 55, ninth connecting area; 551, NTC temperature sensor; 56, second chip; 6, third terminal; 7, bottom plate; 71, screw; 8, cover plate; 81, third buckle; 91, first signal copper bar; 92, second signal copper bar; 93, third signal copper bar; 94, fourth signal copper bar; 95, fifth signal copper bar; 96, sixth signal copper bar; 97, seventh signal copper bar; 98, eighth signal copper bar. DETAILED DESCRIPTION

[0025] In order to further illustrate the technical means and effects adopted by the present application to achieve the predetermined invention purposes, the specific embodiments, structures, features and effects according to the present application are described in detail below in combination with the drawings and preferred embodiments.

[0026] EMBODIMENT The present embodiment discloses a high-voltage large-current low-stray power semiconductor module.

[0027] As Figure 1As shown, the high-voltage high-current low-jam power semiconductor module includes a shell 1, which is a hollow structure with an open upper end. Inside the shell 1, a first terminal assembly, a second terminal assembly, a first substrate 4, and a second substrate 5 are arranged.

[0028] The first substrate 4 and the second substrate 5 are arranged on the inner bottom of the shell 1, the first substrate 4 is located on the side of the second substrate 5, and the first substrate 4 is electrically connected to the second substrate 5.

[0029] The first terminal assembly includes a first plastic package structure 24 and a first terminal 2 embedded in the first plastic package structure 24. The first plastic package structure 24 is clamped in the shell 1 and located at the upper end of the second substrate 5. As an example, the first plastic package structure 24 is provided with a first buckle portion 242 on both sides, which is clamped into the inner wall of the shell 1 on both sides, realizing the preliminary installation and positioning of the first terminal assembly, and facilitating the subsequent welding or sintering connection of the first fixed end.

[0030] As shown in Figure 1 and Figure 2 , the first end 21 of the first terminal 2 is exposed on the side of the first plastic package structure 24 away from the transverse axis of the shell 1 and extends outwardly from the shell 1, and the first end 21 is clamped on the upper end of the shell 1. The first fixed portion 23 of the first terminal 2 is exposed on the side of the first plastic package structure 24 close to the transverse axis of the shell 1 and is electrically connected to the first substrate 4. As an example, the first terminal 2 serves as a DC+ terminal. The first terminal 2 includes a first end 21, a first connecting portion 22, and a first fixed portion 23 connected in sequence. The first connecting portion 22 is embedded in the first plastic package structure 24, and the shape of the first plastic package structure 24 is a right angle type cooperating with the first connecting portion 22. The first connecting portion 22 includes a first portion 221 arranged vertically and a second portion 222 arranged horizontally, the first end of the first portion 221 is connected to the first end 21, the second end of the first portion 221 is connected to the first end of the second portion 222, and the second end of the second portion 222 is connected to the first end of the first fixed portion 23. Specifically, the first end 21, the first connecting portion 22, and the first fixed portion 23 are integrally bent and formed, the first terminal assembly and the first plastic package structure 24 are integrally injection molded, facilitating design and production, while increasing the creepage distance and electrical clearance, greatly improving the voltage resistance and insulation of the first terminal assembly.

[0031] The second terminal assembly includes a second plastic package structure 34 and a second terminal 3 embedded in the second plastic package structure 34. The second plastic package structure 34 is clamped in the shell 1 and clamped into the upper end of the first plastic package structure 24. As an example, the second plastic package structure 34 is provided with a second buckle portion 342 on both sides, which is clamped into the inner wall of the shell 1 on both sides, realizing the preliminary installation and positioning of the second terminal assembly, and facilitating the subsequent welding or sintering connection of the second fixed end.

[0032] The second end portion 31 of the second terminal 3 is exposed on the upper end of the second plastic sealing structure 34 and extends towards the direction opposite to the first end portion 21, and the second end portion 31 is clamped on the upper end of the second plastic sealing structure 34. The second fixed portion 33 of the second terminal 3 is exposed on the side of the second plastic sealing structure 34 close to the lateral axis of the shell 1, and is electrically connected to the second substrate 5 through the first plastic sealing structure 24. The part of the second terminal 3 located in the second plastic sealing structure 34 overlaps the part of the first terminal 2 located in the first plastic sealing structure 24. The second terminal 3 is an example of a DC terminal. The second terminal 3 comprises the second end portion 31, the second connecting portion 32 and the second fixed portion 33 connected in sequence. The second connecting portion 32 is embedded in the second plastic sealing structure 34, and the shape of the second plastic sealing structure 34 is square. The second connecting portion 32 comprises a third portion 321 of right angle and a fourth portion 322 of right angle, the first end of the third portion 321 is connected to the second end portion 31, the second end of the third portion 321 is connected to the first end of the fourth portion 322, and the third portion 321 is located at one end of the fourth portion 322 close to the lateral axis of the shell 1, so that there is enough electrical gap between the third portion 321 and the first portion 221, the creepage distance is increased, and the voltage resistance and insulation performance are improved. The second end of the fourth portion 322 is connected to the first end of the second fixed portion 33, and the fourth portion 322 overlaps the corresponding parts of the first portion 221 and the second portion 222, specifically, the vertical segment of the fourth portion 322 overlaps the corresponding part of the first portion 221, and the horizontal segment of the fourth portion 322 overlaps the corresponding part of the second portion 222, the magnetic field is offset by the proximity effect of the overlapping parts, and the stray inductance is reduced. Correspondingly, the first recess 341 is formed on the upper end of the third portion 321 of the second plastic sealing structure 34, and the electrical gap and the creepage distance are increased. The second recess 241 is formed on the side of the first plastic sealing structure 24 close to the lateral axis of the shell 1 for the second fixed portion 33 to pass through, and the electrical gap and the creepage distance between the first fixed portion 23 and the second fixed portion 33 are increased by the first plastic sealing structure 24. Specifically, the second end portion 31, the second connecting portion 32 and the second fixed portion 33 are integrally bent and formed, the second terminal assembly and the second plastic sealing structure 34 are integrally injection molded, which is convenient for design and production, and the creepage distance and the electrical gap are increased, and the voltage resistance and insulation of the second terminal assembly are greatly improved.

[0033] As Figure 3 Further, the power semiconductor module further comprises a cover plate 8, the cover plate 8 is provided with third buckling portions 81 on both sides, the third buckling portions 81 are clamped into the inner walls on both sides of the shell 1, the cover plate 8 covers the opening between the shell 1 and the second terminal assembly, which is convenient for preliminarily fixing the cover plate 8 and then injection molding and sealing the power module, and the cover plate 8 can protect the internal devices.

[0034] As Figure 4 and Figure 5As shown, further, the first substrate 4 has two blocks, which are arranged along the width direction of the shell 1. The first substrate 4 is arranged with a first connecting area 41 and a second connecting area 42, the first connecting area 41 has two, the second connecting area 42 is located between the two first connecting areas 41, the first fixed part 23 has four, the second end of the first fixed part 23 is connected to the first connecting area 41 close to the lateral axis of the shell 1, and a plurality of first chips 45 are arranged on the first connecting area 41. The first chip 45 is bonded to the second connecting area 42.

[0035] The second substrate 5 has two blocks, which are bonded between the two blocks of the second substrate 5 and arranged along the width direction of the shell 1. The second substrate 5 is arranged with a fifth connecting area 51 and a sixth connecting area 52, the fifth connecting area 51 has a first opening 511 away from one side of the lateral axis of the shell 1, the sixth connecting area 52 is located in the first opening 511, the second connecting area 42 is bonded to the fifth connecting area 51, a plurality of second chips 56 are arranged on both sides of the fifth connecting area 51, the second chip 56 is bonded to the sixth connecting area 52, and the second fixed part 33 has two, the second end of the second fixed part 33 is connected to the sixth connecting area 52 close to one side of the lateral axis of the shell 1.

[0036] Specifically, the first chip 45 and the second chip 56 are sic chips, which have the advantages of high voltage resistance, high thermal conductivity, low switching loss, small size, etc., and are more suitable for high-voltage high-current scenes. There are 14 chips in parallel on one substrate, and two substrates form one bridge arm, i.e. 28 chips in parallel, which ensures that the outflow capacity can reach up to 1500A.

[0037] As shown in Figure 4 and Figure 5 further, the second connecting area 42 is provided with a second opening 421 away from one end of the lateral axis of the shell 1, and the first substrate 4 is arranged with a third connecting area 43 and a fourth connecting area 44 in the second opening 421, the gate of the first chip 45 is bonded to the third connecting area 43, and the power supply of the first chip 45 is bonded to the fourth connecting area 44.

[0038] The sixth connecting area 52 is provided with a third opening 521 away from one end of the lateral axis of the shell 1, and the second substrate 5 is arranged with a seventh connecting area 53 and an eighth connecting area 54 in the third opening 521, the gate of the second chip 56 is bonded to the seventh connecting area 53, and the power supply of the second chip 56 is bonded to the eighth connecting area 54.

[0039] As shown in Figure 3 and Figure 6As shown, further, the first end of the first signal copper busbar 91 passes through the outer casing 1 and protrudes from the upper end of the outer casing 1, and the second end of the first signal copper busbar 91 is connected to the third connection area 43 of the two first substrates 4. The first end of the second signal copper busbar 92 passes through the outer casing 1 and protrudes from the upper end of the outer casing 1, and the second end of the second signal copper busbar 92 is connected to the fourth connection area 44 of the two first substrates 4. The first end of the third signal copper busbar 93 passes through the outer casing 1 and protrudes from the upper end of the outer casing 1, and the second end of the third signal copper busbar 93 is connected to the seventh connection area 53 of the two second substrates 5. The first end of the fourth signal copper busbar 94 passes through the outer casing 1 and protrudes from the upper end of the outer casing 1, and the second end of the fourth signal copper busbar 94 is connected to the eighth connection area 54 of the two second substrates 5. The first end of the fifth signal copper busbar 95 is snapped onto the upper end of the outer casing 1, and the second end of the fifth signal copper busbar 95 is connected to the side of the fourth part 322. The first end of the sixth signal copper busbar 96 is snapped onto the upper end of the outer casing 1, and the second end of the sixth signal copper busbar 96 is connected to the side of the second part 222.

[0040] like Figure 3 and Figure 6 As shown, the power semiconductor module further includes a third terminal 6, which serves as an AC terminal. The first end of the third terminal 6 passes through and is secured to the upper end of the housing 1, while the second end connects to the side of the second connection area 42 away from the lateral axis of the housing 1. The first end of the seventh signal copper busbar 97 passes through the housing 1 and protrudes from the upper end of the housing 1, while the second end of the seventh signal copper busbar 97 is connected to the side of the third terminal 6.

[0041] like Figure 3 , Figure 5 and Figure 6 As shown, a ninth connection area 55 is further provided on the second substrate 5. The ninth connection area 55 is located at the end of the fifth connection area 51 away from the transverse axis of the outer casing 1 and is spaced apart from the other connection areas. An NTC temperature sensor 551 is provided on the ninth connection area 55. The first end of the eighth signal copper busbar 98 passes through the outer casing 1 and is exposed at the upper end of the outer casing 1. The second end of the eighth signal copper busbar 98 is connected to the ninth connection area 55.

[0042] like Figure 1 As shown, the power semiconductor module further includes a base plate 7, which is connected to the lower end of the housing 1 by screws 71. The lower end of the first substrate 4 is connected to the base plate 7, and the lower end of the second substrate 5 is connected to the base plate 7. For example, the base plate 7 uses a high thermal conductivity material to reduce thermal resistance, and the first substrate 4 and the second substrate 5 use high-pressure-resistant ceramic substrates to achieve good heat dissipation and ensure high power output.

[0043] In this embodiment, the shell 1, the first plastic sealing structure 24, the second plastic sealing structure 34 and the cover plate 8 are made of the highest grade CTI plastic, such as polyphenylene sulfide, polycarbonate, polyether sulfone, etc., to ensure the creepage distance and insulation performance of the power module. The first signal copper bar 91, the second signal copper bar 92, the third signal copper bar 93, the fourth signal copper bar 94, the seventh signal copper bar 97 and the eighth signal copper bar 98 are integrally injection molded with the shell 1, improving the voltage resistance and insulation performance.

[0044] In this embodiment, the current path is the first terminal 2→the first connecting area 41→the first chip 45→the second connecting area 42→the fifth connecting area 51→the second chip 56→the sixth connecting area 52→the second terminal 3. Among them, the first terminal 2 and the second terminal 3 are adjacent and the current directions are opposite, the first connecting area 41 and the second connecting area 42 are adjacent and the current directions are opposite, and the fifth connecting area 51 and the sixth connecting area 52 are adjacent and the current directions are opposite.

[0045] In this embodiment, by taking the first terminal 2 and the second terminal 3 as two separate parts, since the first terminal 2 and the second terminal 3 are wrapped by the plastic sealing structure, the creepage distance and the electrical clearance can be increased, so that the voltage resistance and insulation are greatly improved, the voltage resistance can reach 3300V, and the insulation can withstand 6000V, which is suitable for high-voltage and high-current use scenarios. The first terminal assembly and the second terminal assembly are integrally injection molded and clamped in the shell 1, which can preliminarily position and install the first terminal assembly and the second terminal assembly, facilitate the connection of the first fixed part 23 and the first substrate 4 and the connection of the second fixed part 33 and the first substrate 4, and also facilitate production and installation.

[0046] At the same time, the second terminal assembly is located in the right angle of the first terminal assembly, so that the parts of the first terminal 2 and the second terminal 3 wrapped by the plastic sealing structure overlap and the current directions are opposite. By designing the current path, the first connecting area 41 and the second connecting area 42 are adjacent and the current directions are opposite, and the fifth connecting area 51 and the sixth connecting area 52 are adjacent and the current directions are opposite. The magnetic field is cancelled by the proximity effect between the terminals and the connecting areas, the stray inductance is reduced, the stray inductance is reduced to 10nH, and at the same time, a high-thermal-conductivity bottom plate and a high-voltage-resistance ceramic substrate are also used to achieve good heat dissipation and ensure high-power output. Up to 28 sic chips can be connected in parallel on the bridge arm formed by the two substrates, and the maximum current output can reach 1500A.

[0047] The above merely describes the preferred embodiments of the present application, and is not intended to limit the present application in any form. Although the present application has been disclosed with the preferred embodiments as above, it is not intended to limit the present application. Any person skilled in the art can make some changes or modifications to the above disclosed technical content to obtain equivalent embodiments with equivalent changes, as long as the changes or modifications do not deviate from the technical solution of the present application. Any modification, change, equivalent change and modification of the above embodiments made according to the technical essence of the present application still belong to the scope of the technical solution of the present application.

Claims

1. A high-voltage, high-current, low-stray-inductance power semiconductor module, characterized in that: The device includes a housing, which is a hollow structure with an opening at the top; a first terminal assembly, a second terminal assembly, a first substrate, and a second substrate are disposed inside the housing. The first substrate and the second substrate are disposed on the bottom inner side of the housing, the first substrate is located on the side of the second substrate, and the first substrate and the second substrate are electrically connected. The first terminal assembly includes a first molding structure and a first terminal embedded in the first molding structure; the first molding structure is snapped into the housing and located at the upper end of the second substrate; the first end of the first terminal is exposed on the side of the first molding structure away from the lateral axis of the housing and extends toward the outside of the housing, and the first end is snapped into the upper end of the housing; the first fixing part of the first terminal is exposed on the side of the first molding structure near the lateral axis of the housing and is electrically connected to the first substrate. The second terminal assembly includes a second molding compound and a second terminal embedded within the second molding compound; the second molding compound is snapped into the housing and into the upper end of the first molding compound; the second end of the second terminal protrudes from the upper end of the second molding compound and extends in the opposite direction to the first end, and the second end is snapped into the upper end of the second molding compound; the second fixing portion of the second terminal protrudes from the side of the second molding compound near the transverse axis of the housing and passes through the first molding compound to be electrically connected to the second substrate; wherein, the portion of the second terminal located within the second molding compound overlaps with the portion of the first terminal located within the first molding compound.

2. The high-voltage, high-current, low-stray-inductance power semiconductor module according to claim 1, characterized in that: The first terminal includes a first end portion, a first connecting portion, and a first fixing portion connected in sequence; the first connecting portion is embedded in a first plastic encapsulation structure, the first plastic encapsulation structure is right-angled and cooperates with the first connecting portion; the first connecting portion includes a vertically arranged first portion and a horizontally arranged second portion, the first end of the first portion is connected to the first end portion, the second end of the first portion is connected to the first end of the second portion, and the second end of the second portion is connected to the first end of the first fixing portion; The second terminal includes a second end portion, a second connecting portion, and a second fixing portion connected in sequence; the second connecting portion is embedded in a second plastic encapsulation structure, the second plastic encapsulation structure being square in shape; the second connecting portion includes a right-angled third portion and a right-angled fourth portion, the first end of the third portion being connected to the second end portion, the second end of the third portion being connected to the first end of the fourth portion, and the third portion being located at the end of the fourth portion near the transverse axis of the outer shell; the second end of the fourth portion being connected to the first end of the second fixing portion, the fourth portion overlapping the corresponding portions of the first and second portions; the second plastic encapsulation structure has a first groove at the upper end of the third portion.

3. The high-voltage, high-current, low-stray-inductance power semiconductor module according to claim 1, characterized in that: The first molding structure has a first fastening part on both sides, which is snapped into the inner wall of the outer casing on both sides; the second molding structure has a second fastening part on both sides, which is snapped into the inner wall of the outer casing on both sides; the first molding structure has a second groove on the side near the transverse axis of the outer casing for the second fixing part to pass through; the power semiconductor module also includes a cover plate, the cover plate has a third fastening part on both sides, which is snapped into the inner wall of the outer casing on both sides, and the cover plate covers the opening between the outer casing and the second terminal assembly.

4. The high-voltage, high-current, low-stray-inductance power semiconductor module according to claim 2, characterized in that: The first substrate has two pieces, which are spaced apart along the width direction of the shell; a first connection area and a second connection area are spaced apart on the first substrate, there are two first connection areas, and the second connection area is located between the two first connection areas. The second end of the first fixing part is connected to the first connection area near the transverse axis of the shell. A plurality of first chips are disposed on the first connection area, and the first chips are bonded to the second connection area. The second substrate comprises two pieces, which are bonded together and spaced apart along the width direction of the outer shell. A fifth connection area and a sixth connection area are spaced apart on the second substrate. The fifth connection area has a first opening on the side away from the lateral axis of the outer shell. The sixth connection area is located in the first opening. The second connection area is bonded to the fifth connection area. A plurality of second chips are disposed on both sides of the fifth connection area. The second chips are bonded to the sixth connection area. The second end of the second fixing part is connected to the side of the sixth connection area near the lateral axis of the outer shell.

5. The high-voltage, high-current, low-stray-inductance power semiconductor module according to claim 4, characterized in that: The second connection area has a second opening at one end away from the lateral axis of the outer shell. The first substrate has a third connection area and a fourth connection area disposed at intervals within the second opening. The gate of the first chip is bonded to the third connection area, and the power supply of the first chip is bonded to the fourth connection area. The sixth connection area has a third opening at one end away from the lateral axis of the outer shell. The second substrate has a seventh connection area and an eighth connection area disposed at intervals within the third opening. The gate of the second chip is bonded to the seventh connection area, and the power supply of the second chip is bonded to the eighth connection area.

6. The high-voltage, high-current, low-stray-inductance power semiconductor module according to claim 5, characterized in that: The first signal copper busbar has its first end passing through the housing and protruding from the upper part of the housing. The second end of the first signal copper busbar connects to the third connection area of ​​the two first substrates. The first end of the second signal copper busbar passes through the housing and protrudes from the upper part of the housing. The second end of the second signal copper busbar connects to the fourth connection area of ​​the two first substrates. The first end of the third signal copper busbar passes through the housing and protrudes from the upper part of the housing. The second end of the third signal copper busbar connects to the seventh connection area of ​​the two second substrates. The first end of the fourth signal copper busbar passes through the housing and protrudes from the upper part of the housing. The second end of the fourth signal copper busbar connects to the eighth connection area of ​​the two second substrates. The first end of the fifth signal copper busbar is snapped into the upper part of the housing. The second end of the fifth signal copper busbar is connected to the fourth side. The first end of the sixth signal copper busbar is snapped into the upper part of the housing. The second end of the sixth signal copper busbar is connected to the second side.

7. The high-voltage, high-current, low-stray-inductance power semiconductor module according to claim 6, characterized in that: The power semiconductor module further includes a third terminal, the first end of which passes through and is secured to the upper end of the housing, and the second end of which is connected to the side of the second connection area away from the lateral axis of the housing; the first end of the seventh signal copper bus passes through the housing and protrudes from the upper end of the housing, and the second end of the seventh signal copper bus is connected to the side of the third terminal; a ninth connection area is also provided on the second substrate, the ninth connection area is located at the end of the fifth connection area away from the lateral axis of the housing, and is spaced apart from other connection areas, an NTC temperature sensor is provided on the ninth connection area, the first end of the eighth signal copper bus passes through the housing and protrudes from the upper end of the housing, and the second end of the eighth signal copper bus is connected to the ninth connection area.

8. The high-voltage, high-current, low-stray-inductance power semiconductor module according to claim 1, characterized in that: The power semiconductor module also includes a base plate, which is connected to the lower end of the housing by screws. The lower end of the first substrate is connected to the base plate, and the lower end of the second substrate is connected to the base plate.

9. The high-voltage, high-current, low-stray-inductance power semiconductor module according to claim 7, characterized in that: The first substrate and the second substrate are made of high-pressure resistant ceramic substrates, and the outer shell, the first molding structure, the second molding structure and the cover plate are made of the highest grade CTI plastic; the first terminal assembly is integrally injection molded with the first molding structure, and the second terminal assembly is integrally injection molded with the second molding structure; the first signal copper busbar, the second signal copper busbar, the third signal copper busbar, the fourth signal copper busbar, the seventh signal copper busbar and the eighth signal copper busbar are integrally injection molded with the outer shell.

10. The high-voltage, high-current, low-stray-inductance power semiconductor module according to claim 4, characterized in that: The first chip and the second chip are SIC chips. 14 first chips are connected in parallel on the first substrate, and 14 second chips are connected in parallel on the second substrate.

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