Substrate processing apparatus

Abstract

A substrate processing apparatus for positioning an edge ring is provided. The substrate processing apparatus includes: an electrostatic chuck having a substrate support surface and a ring support surface having a first through-hole into which a lift pin is inserted; an edge ring supported by the ring support surface; and a cylindrical member inserted into the first through-hole of the electrostatic chuck and having a second through-hole, the cylindrical member having: a first shaft portion inserted into the first through-hole of the electrostatic chuck, a second shaft portion inserted into the second through-hole of the electrostatic chuck, and a third shaft portion inserted into the second through-hole of the electrostatic chuck; the first shaft portion is provided with a first through hole, the first head portion is arranged on the ring supporting surface of the electrostatic chuck when the first shaft portion is inserted into the first through hole of the electrostatic chuck, and the edge ring is provided with a first groove portion which is arranged on the lower surface of the edge ring and is used for arranging the first head portion.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to a substrate processing apparatus. BACKGROUND

[0002] Patent Document 1 discloses a device for processing a substrate, which has a substrate support, an electrostatic chuck provided on the substrate support and including a first portion, a second portion, and a third portion, and a processing assembly surrounding the electrostatic chuck, wherein the processing assembly has a support ring provided on a surface of the third portion of the electrostatic chuck, an edge ring provided on a surface of the second portion of the electrostatic chuck and independently movable with respect to the support ring, and a cover ring provided on the support ring and having a first surface in contact with the support ring.

[0003] [CITED DOCUMENT]

[0004] [Patent Document]

[0005] [Patent Document 1] Japanese Patent Application Laid-Open No. 2019-505088 SUMMARY

[0006] [PROBLEMS TO BE SOLVED BY THE INVENTION]

[0007] In one aspect, the present disclosure provides a substrate processing apparatus that positions an edge ring.

[0008] [TECHNICAL SOLUTION]

[0009] To solve the above problem, according to one aspect, there can be provided a substrate processing apparatus, which has an electrostatic chuck having a substrate support surface and a ring support surface having a first through-hole into which a lift pin is inserted, an edge ring supported by the ring support surface, and a cylindrical member inserted into the first through-hole of the electrostatic chuck and having a second through-hole, wherein the cylindrical member has a first shaft portion inserted into the first through-hole of the electrostatic chuck, and a first head portion that is a portion disposed above the ring support surface of the electrostatic chuck when the first shaft portion is inserted into the first through-hole of the electrostatic chuck, and the edge ring has a first groove portion provided on a lower surface of the edge ring and used to dispose the first head portion.

[0010] [ADVANTAGEOUS EFFECTS]

[0011] According to one aspect, there can be provided a substrate processing apparatus that positions an edge ring. BRIEF DESCRIPTION OF DRAWINGS

[0012] [ Figure 1 ] An example of an explanatory diagram of a configuration example of a plasma processing system.

[0013] [Figure 2 FIG. 1 is a schematic view of a substrate support of a first embodiment of an inductively coupled plasma processing apparatus.

[0014] [ Figure 3 FIG. 2 is a cross-sectional view of the substrate support of the first embodiment.

[0015] [ Figure 4 FIG. 3 is another cross-sectional view of the substrate support of the first embodiment.

[0016] [ Figure 5 FIG. 4 is a plan view of the substrate support.

[0017] [ Figure 6A FIG. 5 is an oblique view of a lower ring of the substrate support.

[0018] [ Figure 6B FIG. 6 is another oblique view of the lower ring of the substrate support.

[0019] [ Figure 6C FIG. 7 is yet another oblique view of the lower ring of the substrate support.

[0020] [ Figure 7A FIG. 8 is a pattern view of the lower ring of the substrate support.

[0021] [ Figure 7B FIG. 9 is another pattern view of the lower ring of the substrate support.

[0022] [ Figure 8A FIG. 10 is an oblique view of an inner ring of the substrate support.

[0023] [ Figure 8B FIG. 11 is another oblique view of the inner ring of the substrate support.

[0024] [ Figure 8C FIG. 12 is yet another oblique view of the inner ring of the substrate support.

[0025] [ Figure 9A FIG. 13 is a pattern view of the inner ring of the substrate support.

[0026] [ Figure 9B FIG. 14 is another pattern view of the inner ring of the substrate support.

[0027] [ Figure 10 FIG. 15 is another cross-sectional view of the substrate support of a second embodiment of the inductively coupled plasma processing apparatus.

[0028] [ Figure 11A FIG. 16 is a plan view of the substrate support.

[0029] [ Figure 11BFIG. 1 is an example of a diagram for explaining a positioning structure of an inner ring.

[0030] [ Figure 11C FIG. 1 is an example of a diagram for explaining a positioning structure of an inner ring.

[0031] [ Figure 11D FIG. 1 is an example of a diagram for explaining a positioning structure of an inner ring.

[0032] [ Figure 12A FIG. 1 is an example of a diagram for explaining a positioning structure of an inner ring.

[0033] [ Figure 12B FIG. 1 is an example of a diagram for explaining a positioning structure of an inner ring. DETAILED DESCRIPTION

[0034] Various example embodiments will now be described in detail with reference to the accompanying drawings. Note that the same or corresponding portions are designated with the same reference numerals, and descriptions thereof will not be repeated.

[0035] Figure 1 is an example of a diagram for explaining a configuration example of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing apparatus (substrate processing apparatus) 1 and a control section 2. The plasma processing system is an example of a substrate processing system, and the plasma processing apparatus 1 is an example of a substrate processing apparatus. The plasma processing apparatus 1 includes a plasma processing chamber 10, a substrate support section 11, and a plasma generating section 12. The plasma processing chamber 10 has a plasma processing space. Further, the plasma processing chamber 10 has at least one gas supply port for supplying at least one processing gas to the plasma processing space and at least one gas exhaust port for exhausting gas from the plasma processing space. The gas supply port is connected to a gas supply section 20 (see Figure 2 ) described later, and the gas exhaust port is connected to an exhaust system 40 (see Figure 2 ) described later. The substrate support section 11 has a substrate support surface that is disposed in the plasma processing space and that supports a substrate.

[0036] The plasma generation section 12 is configured to generate plasma from at least one kind of processing gas supplied into a plasma processing space. The plasma formed in the plasma processing space can be a capacitively coupled plasma (CCP), an inductively coupled plasma (ICP), an electron-cyclotron-resonance plasma (ECR), a helicon wave plasma (HWP), a surface wave plasma (SWP), or the like. In addition, various types of plasma generation sections including an AC (Alternating Current) plasma generation section and a DC (Direct Current) plasma generation section can be used. In one embodiment, an AC signal (AC power) used in the AC plasma generation section has a frequency in a range of 100 kHz to 10 GHz. Thus, the AC signal includes an RF (Radio Frequency) signal and a microwave signal. In one embodiment, the RF signal has a frequency in a range of 100 kHz to 150 MHz.

[0037] The control section 2 processes computer executable commands for causing the plasma processing apparatus 1 to perform various steps described in the present disclosure. The control section 2 can be configured to control each element of the plasma processing apparatus 1 to perform various steps described herein. In one embodiment, part or all of the control section 2 can be included in the plasma processing apparatus 1. The control section 2 can include a processing section 2a1, a storage section 2a2, and a communication interface 2a3. The control section 2 is implemented by, for example, a computer 2a. The processing section 2a1 can be configured to perform various control operations (actions) by reading a program from the storage section 2a2 and executing the read program. The program can be pre-stored in the storage section 2a2 or acquired via a medium when needed. The acquired program is stored in the storage section 2a2 and can be read from the storage section 2a2 and executed by the processing section 2a1. The medium can be various storage media readable by the computer 2a or a communication line connected to the communication interface 2a3. The processing section 2a1 can be a CPU (Central Processing Unit). The storage section 2a2 can include a RAM (Random Access Memory), a ROM (Read Only Memory), an HDD (Hard Disk Drive), an SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 can communicate with the plasma processing apparatus 1 via a communication line such as a LAN (Local Area Network).

[0038] A configuration example of an inductively coupled plasma processing apparatus as an example of the plasma processing apparatus 1 will be described below. Figure 2 is an example of a drawing for describing a configuration example of an inductively coupled plasma processing apparatus.

[0039] The inductively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply section 20, a power source 30, and an exhaust system 40. The plasma processing chamber 10 includes a dielectric window 101. Further, the plasma processing apparatus 1 includes a substrate support section 11, a gas introduction section, and an antenna 14. The substrate support section 11 is disposed in the plasma processing chamber 10. The antenna 14 is disposed on or above the plasma processing chamber 10 (i.e., on or above the dielectric window 101). The plasma processing chamber 10 has the dielectric window 101, a sidewall 102 of the plasma processing chamber 10, and a plasma processing space 10s defined by the substrate support section 11. The plasma processing chamber 10 is grounded.

[0040] The substrate support section 11 includes a main body section 111 and a ring assembly 112. The main body section 111 has a central region 111a for supporting a substrate W and a ring-shaped region 111b for supporting the ring assembly 112. A wafer is an example of the substrate W. The ring-shaped region 111b of the main body section 111 surrounds the central region 111a of the main body section 111 in a plan view. The substrate W is disposed on the central region 111a of the main body section 111, and the ring assembly 112 is disposed on the ring-shaped region 111b of the main body section 111 in a manner surrounding the substrate W on the central region 111a of the main body section 111. Therefore, the central region 111a is also referred to as a substrate support surface for supporting the substrate W, and the ring-shaped region 111b is also referred to as a ring support surface for supporting the ring assembly 112.

[0041] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes an electrically conductive member. The electrically conductive member of the base 1110 can function as a bias electrode. The electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic electrode 1111b disposed in the ceramic member 1111a. The ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has a ring-shaped region 111b. Note that other members, such as a ring-shaped electrostatic chuck and a ring-shaped insulating member, surrounding the electrostatic chuck 1111 can also have the ring-shaped region 111b. In this case, the ring assembly 112 can be disposed on the ring-shaped electrostatic chuck or the ring-shaped insulating member, or on both the electrostatic chuck 1111 and the ring-shaped insulating member. Further, at least one RF / DC electrode coupled to the RF power source 31 and / or the DC power source 32 described later can also be disposed in the ceramic member 1111a. In this case, the at least one RF / DC electrode functions as a bias electrode. Note that the electrically conductive member of the base 1110 and the at least one RF / DC electrode can also function as a plurality of bias electrodes. Further, the electrostatic electrode 1111b can also function as a bias electrode. Thus, the substrate support portion 11 includes at least one bias electrode.

[0042] The ring assembly 112 includes one or more ring-shaped members. In one embodiment, the one or more ring-shaped members include one or more edge rings 1120 (see FIGS. 6A and 6B described later) and at least one cover ring 1123 (see FIGS. 7A and 7B described later). The edge ring 1120 is formed of an electrically conductive material or an insulating material, and the cover ring 1123 is formed of an insulating material. Figure 3 Figure 3 The edge ring 1120 is formed of an electrically conductive material or an insulating material, and the cover ring 1123 is formed of an insulating material.

[0043] Further, the substrate support portion 11 can include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate W to a target temperature. The temperature adjustment module can include a heater, a heat transfer medium, a flow path 1110a, or a combination thereof. A heat transfer fluid such as a brine or a gas flows through the flow path 1110a. In one embodiment, the flow path 1110a is formed in the base 1110, and one or more heaters are disposed in the ceramic member 1111a of the electrostatic chuck 1111. Further, the substrate support portion 11 can include a heat transfer gas supply portion configured to supply a heat transfer gas into a gap between a back surface of the substrate W and the central region 111a.

[0044] ​The gas introduction section is configured to introduce at least one kind of processing gas from the gas supply section 20 into the plasma processing space 10s. In one embodiment, the gas introduction section includes a central gas injector (CGI) 13. The central gas injector 13 is disposed above the substrate support section 11 and is mounted on a central opening portion formed in the dielectric window 101. The central gas injector 13 has at least one gas supply port 13a, at least one gas flow path 13b, and at least one gas introduction port 13c. The processing gas supplied to the gas supply port 13a is introduced into the plasma processing space 10s from the gas introduction port 13c via the gas flow path 13b. Note that the gas introduction section can also include one or more side gas injectors (SGI) mounted on one or more opening portions formed in the side wall 102, which can be present in addition to or instead of the central gas injector 13.

[0045] The gas supply section 20 can include at least one gas source (gas source) 21 and at least one flow controller 22. In one embodiment, the gas supply section 20 is configured to supply at least one kind of processing gas from the gas source 21 corresponding thereto to the gas introduction section via the flow controller 22 corresponding thereto. Each flow controller 22 can include, for example, a mass flow controller or a pressure-controlled flow controller. In addition, the gas supply section 20 can also include at least one flow modulation device for modulating or pulsing the flow of at least one kind of processing gas.

[0046] The power supply 30 includes an RF power source 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power source 31 is configured to supply at least one RF signal (RF power) to at least one bias electrode and the antenna 14. Thereby, a plasma can be formed from at least one kind of processing gas supplied to the plasma processing space 10s. Therefore, the RF power source 31 can function as at least a part of the plasma generation section 12. Furthermore, by supplying a bias RF signal to at least one bias electrode, a bias potential can be generated on the substrate W, and thereby ions in the formed plasma can be attracted into the substrate W.

[0047] In one embodiment, the RF power source 31 includes a first RF generating section 31a and a second RF generating section 31b. The first RF generating section 31a is configured to be coupled to the antenna 14 via at least one impedance matching circuit and to generate a source RF signal (source RF power) for generating plasma. In one embodiment, the source RF signal has a frequency in a range of 10 MHz to 150 MHz. In one embodiment, the first RF generating section 31a can also be configured to generate a plurality of source RF signals having different frequencies. The generated one or more source RF signals are supplied to the antenna 14.

[0048] The second RF generating section 31b is configured to be coupled to the at least one bias electrode via at least one impedance matching circuit and to generate a bias RF signal (bias RF power). The bias RF signal can have the same frequency as or a different frequency from the source RF signal. In one embodiment, the bias RF signal has a frequency lower than that of the source RF signal. In one embodiment, the bias RF signal has a frequency in a range of 100 kHz to 60 MHz. In one embodiment, the second RF generating section 31b can also be configured to generate a plurality of bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to the at least one bias electrode. In addition, in each embodiment, at least one of the source RF signal and the bias RF signal can also be pulsed.

[0049] In addition, the power source 30 can also include a DC power source 32 coupled to the plasma processing chamber 10. The DC power source 32 includes a bias DC generating section 32a. In one embodiment, the bias DC generating section 32a is configured to be connected to the at least one bias electrode and to generate a bias DC signal. The generated bias DC signal is applied to the at least one bias electrode.

[0050] In each embodiment, the bias DC signal can be pulsed. In this case, a voltage pulse sequence is applied to the at least one bias electrode. The voltage pulse can have a pulse waveform of a rectangle, a trapezoid, a triangle, or a combination thereof. In one embodiment, a waveform generating section for generating the voltage pulse sequence from the DC signal is connected between the bias DC generating section 32a and the at least one bias electrode. Thus, the bias DC generating section 32a and the waveform generating section constitute a voltage pulse generating section. The voltage pulse can have a positive polarity or a negative polarity. In addition, the voltage pulse sequence can also include one or more positive polarity voltage pulses and one or more negative polarity voltage pulses in one cycle. Note that the bias DC generating section 32a can be provided simultaneously with the RF power source 31 or can replace the second RF generating section 31b.

[0051] The antenna 14 includes one or more coils. In one embodiment, the antenna 14 can include an outer coil and an inner coil arranged coaxially. In this case, the RF power source 31 can be connected to both of the outer coil and the inner coil, or can be connected to either of the outer coil and the inner coil. In the former case, the same RF generating section can be connected to both of the outer coil and the inner coil at the same time, and different RF generating sections can be connected to the outer coil and the inner coil, respectively.

[0052] The exhaust system 40 can be connected to a gas exhaust port 10e provided on the bottom of the plasma processing chamber 10, for example. The exhaust system 40 can include a pressure regulating valve and a vacuum pump. By the pressure regulating valve, the pressure in the plasma processing space 10s can be regulated. The vacuum pump can include a turbo molecular pump, a dry pump, or a combination thereof.

[0053] Next, the substrate support section 11 of the first embodiment will be described in detail. Figures 3-5 The substrate support section 11 of the first embodiment will be described further. Figure 3 is an example of another enlarged sectional view of the substrate support section 11 of the first embodiment. Figure 4 is an example of another enlarged sectional view of the substrate support section 11 of the first embodiment. Figure 5 is a view of the substrate support section 11 as viewed from above. Note that, Figure 3 and Figure 4 are sectional views of the substrate support section 11 taken along the radial direction, the left side of the drawing corresponds to the central side of the substrate support section 11, and the right side of the drawing corresponds to the outer peripheral side of the substrate support section 11. Further, Figure 3 is a sectional view at a position S1 (indicated by a white circle in Figure 5 ) where a positioning structure of an under ring 1122 described later is provided. Further, Figure 4 is a sectional view at a position S2 (indicated by a black circle in Figure 5 ) where a positioning structure of an inner ring 1121 described later is provided.

[0054] As shown in Figure 3 and Figure 4 , the main body section 111 of the substrate support section 11 includes a base 1110 and an electrostatic chuck 1111. The electrostatic chuck 1111 is arranged on the base 1110 via an adhesive layer 1112. The adhesive layer 1112 is arranged between the base 1110 and the electrostatic chuck 1111 to adhere the upper surface of the base 1110 and the lower surface of the electrostatic chuck 1111 together. A sealing member 116 is formed of a material having corrosion resistance, plasma resistance, and heat resistance, and serves to protect the adhesive layer 1112 from the processing gas, plasma, and the like of the plasma processing space 10s.

[0055] Further, asFigure 3 As shown in FIG. 1, the substrate support portion 11 has a height adjustment mechanism 15 for adjusting the height of the inner ring 1121 described later. The height adjustment mechanism 15 has a lift mechanism (not shown) for lifting and lowering a lift pin 115 arranged in a through-hole 1110c of the base 1110. The height adjustment mechanism 15 can lift the inner ring 1121 arranged on the support portion 1122b by lifting the lift pin 115 above the upper surface of the support portion 1122b described later, and can further adjust the height of the inner ring 1121. In addition, the height adjustment mechanism 15 can place (load) the inner ring 1121 on the support portion 1122b by lowering the lift pin 115 below the upper surface of the support portion 1122b.

[0056] When the upper surface of the inner ring 1121 is worn due to plasma processing (e.g., etching processing), the height adjustment mechanism 15 can adjust the height of the upper surface of the inner ring 1121 according to the amount of wear. Thereby, by correcting the height of the sheath on the inner ring 1121, the uniformity of the plasma processing can be ensured. In addition, the frequency of replacement of the inner ring 1121 can be reduced. In addition, the height adjustment mechanism 15 adjusts the height of the inner ring 1121 and corrects the height of the sheath on the inner ring 1121. Thereby, the incident angle of ions to the outer peripheral portion of the substrate W can be adjusted. In addition, the height adjustment mechanism 15 can transfer the inner ring 1121 to a conveyance device (not shown), for example, by lifting and lowering the lift pin 115. Thereby, the inner ring 1121 that has been worn can be transported out of the plasma processing chamber 10. In addition, the height adjustment mechanism 15 can receive a new inner ring 1121 conveyed in by the conveyance device (not shown) and load it on the lower ring 1122, for example, by lifting and lowering the lift pin 115. In this way, the inner ring 1121 can be replaced without exposing the plasma processing chamber 10 to the atmosphere.

[0057] As shown in FIG. 1, the ring assembly 112 has an edge ring 1120, a cover ring 1123, and an insulating ring 1124. Figures 3-5

[0058] The edge ring 1120 has an inner ring (first annular member) 1121 and a lower ring (second annular member) 1122. The inner ring 1121 and the lower ring 1122 are formed of, for example, any of SiC, Si, SiO2, or the like.

[0059] The inner ring 1121 is a circular ring-shaped member arranged on the support portion 1122b of the lower ring 1122 and configured to surround the substrate W arranged on the central region 111a (substrate support surface) of the main body portion 111.

[0060] ​The lower ring 1122 is a circular ring-shaped member, and is disposed on the annular region 111b (ring support surface) of the main body portion 111. The lower ring 1122 has, in order from the radially inner side, an inner peripheral side portion 1122a, a support portion 1122b, an outer peripheral side portion 1122c, and a flange portion (flange) 1122d, the upper surfaces of which are different in height.

[0061] The inner peripheral side portion 1122a is a portion disposed on the lower side of the substrate W supported by the central region 111a of the main body portion 111. The upper surface of the inner peripheral side portion 1122a is formed at a position slightly lower than the substrate support surface (central region 111a) of the electrostatic chuck 1111 or at the same height as the substrate support surface.

[0062] The support portion 1122b is provided on the outer periphery of the inner peripheral side portion 1122a, and the inner ring 1121 is disposed on the support portion 1122b. The upper surface of the support portion 1122b is formed at a position lower than the upper surface of the inner peripheral side portion 1122a.

[0063] The outer peripheral side portion 1122c is provided on the outer periphery of the support portion 1122b. The upper surface of the outer peripheral side portion 1122c is formed at a position higher than the upper surfaces of the inner peripheral side portion 1122a and the support portion 1122b. Further, the upper surface of the outer peripheral side portion 1122c is formed at the same height as the upper surface of the cover ring 1123.

[0064] The flange portion 1122d is provided on the outer periphery of the outer peripheral side portion 1122c. The upper surface of the flange portion 1122d is formed at a position lower than the upper surface of the outer peripheral side portion 1122c. The inner periphery of the cover ring 1123 is disposed on the flange portion 1122d. Accordingly, the flange portion 1122d of the lower ring 1122 is suppressed by the cover ring 1123, and upward movement of the lower ring 1122 can be prevented.

[0065] A gap is provided in the radial direction between the outer peripheral wall (cylindrical surface) of the inner peripheral side portion 1122a of the lower ring 1122 and the inner peripheral wall (cylindrical surface) of the inner ring 1121. Further, a gap is provided in the radial direction between the outer peripheral wall (cylindrical surface) of the inner ring 1121 and the inner peripheral wall (cylindrical surface) of the outer peripheral side portion 1122c of the lower ring 1122. Accordingly, when the inner ring 1121 is moved up and down, the inner ring 1121 and the lower ring 1122 can be prevented from rubbing against each other. Further, even in the case where a temperature difference between the inner ring 1121 and the lower ring 1122 causes a difference in thermal expansion therebetween, the inner ring 1121 and the lower ring 1122 can be prevented from abutting against each other, which can cause damage to the inner ring 1121 and / or the lower ring 1122.

[0066] The cover ring 1123 is a circular ring-shaped member, and is disposed so as to surround the edge ring 1120 (lower ring 1122). The cover ring 1123 is formed of an insulating material such as SiO2.

[0067] The insulating ring 1124 is a circular ring-shaped member and is configured to surround the main body portion 111 (the base 1110 and the electrostatic chuck 1111). The insulating ring 1124 can be formed of an insulating material such as SiO2. The insulating ring 1124 supports the cover ring 1123.

[0068] <Positioning structure of the lower ring 1122>

[0069] Next, the structure of the through hole (1111c, 113a, 1122f) for insertion of the lift pin 115 and the positioning structure of the lower ring 1122 with respect to the electrostatic chuck 1111 will be described with reference to Figure 3 in conjunction with Figures 6A-6C and Figures 7A-7B Figures 6A-6C is an example of an oblique view for describing the positioning structure of the lower ring 1122. Specifically, Figure 6A is an example of an oblique view of the lower ring 1122 as viewed from the lower surface side. Figure 6B is an example of an oblique view of the cover 113. Figure 6C is an example of an oblique view of the electrostatic chuck 1111 as viewed from the upper surface side.

[0070] As shown in Figure 3 and Figure 6C , the electrostatic chuck 1111 has a through hole (first through hole) 1111c for insertion of the lift pin 115. The through hole 1111c penetrates from the upper surface to the lower surface of the electrostatic chuck 1111. Note that the through hole 1111c communicates with the through hole 1110c of the base 1110.

[0071] As shown in Figure 3 , a cap (cylindrical member) 113 having a through hole (second through hole) 113a is disposed in the through hole 1111c. The cap 113 is formed of any one of sapphire, Al2O3, SiC, or the like. Further, from the viewpoint of preventing abnormal discharge in the through hole 113a (the through hole 1111c), the cap 113 is preferably formed of an insulating material. Furthermore, the cap 113 is preferably formed of a material having corrosion resistance, plasma resistance, and heat resistance.

[0072] As shown in Figure 6B ​As shown, the cover 113 is a cylindrical component with a through hole 113a extending from the upper surface to the lower surface of the cover 113. This through hole 113a allows the lifting pin 115 to be inserted. Furthermore, the cover 113 has an upper head (first head) 113b and a lower shaft portion (first shaft portion) 113c. The shaft portion 113c is circular in plan view (in other words, a view taken from above, and more specifically, a view taken from a direction perpendicular to the annular support surface of the substrate support portion 11). The shaft portion 113c is the portion into which the through hole 1111c of the electrostatic chuck 1111 is inserted. The head 113b, in plan view, is circular with a diameter larger than that of the shaft portion 113c. When the shaft portion 113c is inserted into the through hole 1111c of the electrostatic chuck 1111, the head portion 113b is positioned on the annular support surface (annular region 111b) of the electrostatic chuck 1111.

[0073] like Figure 3 and Figure 6A As shown, the lower ring 1122 has a countersunk groove (first groove or first countersunk groove) 1122e and a through hole (third through hole) 1122f communicating with the countersunk groove 1122e. The countersunk groove 1122e is formed on the lower surface of the lower ring 1122. When the lower ring 1122 is placed on the ring support surface (annular region 111b) of the electrostatic chuck 1111, the head 113b of the cover 113 is disposed in the countersunk groove 1122e. The through hole 1122f communicates with the countersunk groove 1122e and extends from the lower surface of the support portion 1122b of the lower ring 1122 to the upper surface.

[0074] like Figure 3 As shown, the shaft portion 113c of the cover 113 is inserted into the through hole 1111c of the electrostatic chuck 1111, and the head 113b of the cover 113 is disposed in a countersunk groove 1122e formed on the lower surface of the lower ring 1122, thereby connecting the through hole 113a of the cover 113 and the through hole 1122f of the lower ring 1122. The lifting pin 115 passes through the through hole 113a of the cover 113 and the through hole 1122f of the lower ring 1122, and abuts against the lower surface of the inner ring 1121. On the lower surface of the inner ring 1121, a cutout portion 1121a is formed at the position where it abuts against the lifting pin 115. The cutout portion 1121a is formed as an elongated hole, the longitudinal direction of which is aligned with the radial direction of the electrostatic chuck 1111. Furthermore, the inner circumferential side of the cutout portion 1121a extends to the inner circumferential wall of the inner ring 1121.

[0075] Figures 7A-7B This is an example of a schematic diagram illustrating the positioning structure of the lower ring 1122. Specifically, Figure 7A It is a schematic diagram of the shape of the countersunk groove 1122e of the lower ring 1122 and the shape of the head 113b of the cover 113 disposed in the countersunk groove 1122e in a plan view.Figure 7B is a pattern diagram of the shape of the through-hole 1111c of the electrostatic chuck 1111 in plan view and the shape of the shaft portion 113c of the cover 113 disposed in the through-hole 1111c.

[0076] As shown in Figure 7B , the shape (outer peripheral shape) of the shaft portion 113c of the cover 113 is circular. Also, the shape (inner peripheral shape) of the through-hole 1111c of the electrostatic chuck 1111 is circular. In addition, the inner diameter of the shape of the through-hole 1111c is formed to be only slightly larger than the outer diameter of the shape of the shaft portion 113c, so that the shaft portion 113c can be inserted into the through-hole 1111c. By inserting the shaft portion 113c of the cover 113 into the through-hole 1111c of the electrostatic chuck 1111, the shaft of the through-hole 1111c and the shaft of the cover 113 can be aligned (coincide or align). That is, the cover 113 can be positioned with respect to the electrostatic chuck 1111.

[0077] As shown in Figure 7A , the shape (outer peripheral shape) of the head portion 113b of the cover 113 is circular. The shape (inner peripheral shape) of the countersunk groove portion 1122e of the lower ring 1122 has a long hole shape (slot hole shape) with the radial direction of the electrostatic chuck 1111 as the longitudinal direction. Also, the lateral width of the countersunk groove portion 1122e is formed to be slightly larger than the outer diameter of the shape of the head portion 113b, so that the head portion 113b can be disposed in the countersunk groove portion 1122e.

[0078] Also, as shown in Figure 5 , the positioning structure of the lower ring 1122 including the through-hole 1111c, the cover 113, and the countersunk groove portion 1122e is provided at three places equidistantly in the circumferential direction. Among the positioning structures of the three lower rings 1122 provided at the positions S1, the outer peripheral surface of the head portion 113b of the cover 113 is in contact with the inner peripheral surface of the countersunk groove portion 1122e of the lower ring 1122. For this reason, the lower ring 1122 can be positioned at three points with respect to the electrostatic chuck 1111. Therefore, the position of the lower ring 1122 (edge ring 1120) with respect to the main body portion 111 having the electrostatic chuck 1111 can be adjusted. That is, the center of the circular main body portion 111 in plan view and the center of the circular ring-shaped lower ring 1122 in plan view are adjusted so as to coincide with each other.

[0079] In addition, by configuring the shape of the countersunk groove portion 1122e as a long hole shape with the same longitudinal direction as the radial direction of the electrostatic chuck 1111, the difference in thermal expansion between the electrostatic chuck 1111 and the lower ring 1122 can also be addressed.

[0080] <Positioning structure of inner ring 1121>

[0081] Next, referring to Figure 4 , in conjunction with Figures 8A-8C , and Figures 9A-9BThe positioning structure of the inner ring 1121 with respect to the lower ring 1122 will be described. Figures 8A-8C is an example of an oblique view for describing the positioning structure of the inner ring 1121. Specifically, Figure 8A is an example of an oblique view of the inner ring 1121 as viewed from the lower surface side. Figure 8B is an example of an oblique view of the lower ring 1122 as viewed from the lower surface side. Figure 8C is an example of an oblique view of the guide pin 114.

[0082] As shown in Figure 4 and Figure 8A , the lower surface of the inner ring 1121 has a groove portion (2nd groove portion) 1121b.

[0083] As shown in Figure 4 and Figure 8B , the lower ring 1122 has a countersunk groove portion (2nd countersunk groove portion) 1122g and a through-hole (4th through-hole) 1122h that communicates with the countersunk groove portion 1122g. The countersunk groove portion 1122g is formed in the lower surface of the lower ring 1122. The head portion 114a of the guide pin 114 is disposed in the countersunk groove portion 1122g. The through-hole 1122h communicates with the countersunk groove portion 1122g and penetrates from the lower surface to the upper surface of the support portion 1122b of the lower ring 1122.

[0084] As shown in Figure 4 , the guide pin 114 is disposed in the groove portion 1121b of the inner ring 1121 from the countersunk groove portion 1122g and the through-hole 1122h of the lower ring 1122. The guide pin 114 is formed of any one of sapphire, Al2O3, SiC, or the like. In addition, from the viewpoint of preventing abnormal discharge, the guide pin 114 is preferably formed of an insulating material. In addition, the guide pin 114 is preferably formed of a material having corrosion resistance, plasma resistance, and heat resistance.

[0085] As shown in Figure 8C , the guide pin 114 is a shaft-like member and has a lower head portion (2nd head portion) 114a and an upper shaft portion (2nd shaft portion) 114b. The shaft portion 114b has a circular shape in a plan view. The shaft portion 114b is a portion that is inserted into the through-hole 1122h of the lower ring 1122 and inserted into the groove portion 1121b of the inner ring 1121. The head portion 114a has a circular shape in a plan view, and the diameter of the outer shape is larger than that of the shaft portion 114b. The head portion 114a is a portion that is disposed in the countersunk groove portion 1122g of the lower ring 1122.

[0086] Figures 9A-9B is an example of a mode diagram for describing the positioning structure of the inner ring 1121. Specifically, Figure 9Ais a pattern diagram of the shape of the groove portion 1121b of the inner ring 1121 in a plan view and the shape of the shaft portion 114b of the guide pin 114 arranged in the groove portion 1121b. Figure 9B is a pattern diagram of the shape of the countersunk groove portion 1122g of the lower ring 1122 in a plan view and the shape of the head portion 114a of the guide pin 114 arranged in the countersunk groove portion 1122g.

[0087] As shown in Figure 9B , the shape (outer peripheral shape) of the head portion 114a of the guide pin 114 is circular. Further, the shape (inner peripheral shape) of the countersunk groove portion 1122g of the lower ring 1122 is also circular. In addition, the inner diameter of the shape of the countersunk groove portion 1122g is formed to be slightly larger than the outer diameter of the shape of the head portion 114a so that the head portion 114a of the guide pin 114 can be inserted. By inserting the head portion 114a of the guide pin 114 in the countersunk groove portion 1122g of the lower ring 1122, the axis of the countersunk groove portion 1122g and the axis of the guide pin 114 can be aligned. That is, the guide pin 114 can be positioned with respect to the lower ring 1122.

[0088] As shown in Figure 9A , the shape (outer peripheral shape) of the shaft portion 114b of the guide pin 114 is circular. The shape (inner peripheral shape) of the groove portion 1121b of the inner ring 1121 has a long hole shape (slot hole shape) with the radial direction of the electrostatic chuck 1111 as the longitudinal direction. Further, the lateral width of the groove portion 1121b is formed to be slightly larger than the outer diameter of the shape of the shaft portion 114b so that the shaft portion 114b can be arranged in the groove portion 1121b.

[0089] Further, as shown in Figure 5 , the positioning structure of the inner ring 1121 including the guide pin 114, the countersunk groove portion 1122g and the through hole 1122h of the lower ring 1122, and the groove portion 1121b of the inner ring 1121 is provided at three places equidistantly in the circumferential direction. Among the three positioning structures of the inner ring 1121 provided at the position S2, the outer peripheral surface of the shaft portion 114b of the guide pin 114 is in contact with the inner peripheral surface of the groove portion 1121b of the inner ring 1121. Accordingly, the inner ring 1121 can be positioned at three points with respect to the lower ring 1122. Further, the position of the inner ring 1121 with respect to the main body portion 111 having the electrostatic chuck 1111 can also be adjusted via the positioned lower ring 1122. That is, the center of the circular ring-shaped lower ring 1122 in a plan view and the center of the circular ring-shaped inner ring 1121 in a plan view are adjusted to be coincident. Further, the center of the circular main body portion 111 in a plan view and the center of the circular ring-shaped inner ring 1121 in a plan view are also adjusted to be coincident.

[0090] Furthermore, by configuring the groove 1121b into an elongated hole shape with the same longitudinal direction as the radial direction of the electrostatic chuck 1111, the thermal expansion difference between the inner ring 1121 and the lower ring 1122 can also be accommodated.

[0091] As described above, the substrate support portion 11 according to the first embodiment can prevent the edge rings 1120 (inner ring 1121 and lower ring 1122) from becoming misaligned (positional deviation) due to thermal expansion caused by heat input during substrate processing. Furthermore, by preventing the edge rings 1120 from becoming misaligned, the stability of the substrate processing process can be improved.

[0092] Furthermore, if a potential difference exists between the inner ring 1121 and the lower ring 1122, which are lifted by the lifting pin 115, contact between the inner ring 1121 and the lower ring 1122 may cause abnormal discharge. According to the substrate support portion 11 of the first embodiment, abnormal discharge can also be prevented by suppressing misalignment of the edge ring 1120.

[0093] Next, combined Figures 10-11D The substrate support portion 11 of the second embodiment will be further described.

[0094] It should be noted that the positioning structure of the lower ring 1122 in the substrate support portion 11 of the second embodiment has the same positioning structure as the lower ring 1122 in the substrate support portion 11 of the first embodiment (see...). Figure 3 Similar to the structure shown in Figures 6 and 7. Furthermore, the positioning structure of the inner ring 1121 of the substrate support portion 11 in the second embodiment differs from that in the first embodiment. Therefore, the positioning structure of the inner ring 1121 of the substrate support portion 11 in the second embodiment will be described below, and descriptions that are repeated in the first embodiment will be omitted.

[0095] Figure 10 This is another example of an enlarged cross-sectional view of the substrate support portion 11 in the second embodiment. Figures 11A-11D This is an example diagram used to illustrate the positioning structure of the inner ring 1121. It should be noted that... Figure 10 This is a cross-sectional view obtained by cutting the substrate support portion 11 radially. The left side of the figure corresponds to the central side of the substrate support portion 11, and the right side of the figure corresponds to the outer periphery of the substrate support portion 11. Figure 10 Position S2 is where the positioning structure with inner ring 1121 is located. Figure 5 A cross-sectional view at the location indicated by the black circle in the image. Specifically, Figure 11A This is a cross-sectional view obtained by cutting the inner ring 1121 and the lower ring 1122 radially. Figure 11B This diagram is obtained by observing the lower ring 1122 from above. Figure 11CThis is an oblique view obtained by observing the lower ring 1122 from above. Figure 11D This is an oblique view obtained by observing the inner ring 1121 from the lower surface side.

[0096] like Figure 10 As shown, a protrusion (first protrusion) 1122i is formed on the upper surface of the support portion 1122b of the lower ring 1122. Furthermore, a groove (third groove) 1121c is formed on the lower surface of the inner ring 1121. The lower surface of the inner ring 1121 abuts against the upper surface of the support portion 1122b of the lower ring 1122. The protrusion 1122i is disposed within the groove 1121c.

[0097] like Figures 11A-11C As shown, the protrusion 1122i has a spherical shape.

[0098] like Figure 11A As shown, when viewed radially, the cross-section of the groove 1121c is arc-shaped. The radius of curvature of the arc shape of the groove 1121c is formed to be larger than the radius of curvature of the spherical surface of the protrusion 1122i. Furthermore, as... Figures 11B-11D As shown, the groove 1121c is formed as an elongated hole, the longitudinal direction of which is the radial direction of the electrostatic chuck 1111.

[0099] Here, in the positioning structure of the inner ring 1121 at position S2, the protrusion 1122i of the lower ring 1122 contacts the groove 1121c of the inner ring 1121 at one point. Figure 11A An example of contact point P1 is shown. Furthermore, as... Figure 5 As shown, the positioning structure of the inner ring 1121, including the protrusion 1122i and the groove 1121c, is provided at three equal intervals along the circumference. Accordingly, the inner ring 1121 can be positioned at three points relative to the lower ring 1122. Furthermore, the position of the inner ring 1121 relative to the main body 111 with the electrostatic chuck 1111 can be adjusted via the positioned lower ring 1122. That is, the center of the annular lower ring 1122 in the plan view and the center of the annular inner ring 1121 in the plan view are aligned. In addition, the center of the circular main body 111 in the plan view and the center of the annular inner ring 1121 in the plan view are also aligned.

[0100] Furthermore, by configuring the groove 1121c into an elongated hole shape with the radial direction of the electrostatic chuck 1111 as the longitudinal direction, the thermal expansion difference between the inner ring 1121 and the lower ring 1122 can also be accommodated.

[0101] As described above, the substrate support portion 11 according to the second embodiment can prevent the edge rings 1120 (inner ring 1121 and lower ring 1122) from misaligning due to thermal expansion caused by heat input during substrate processing. Furthermore, by suppressing misalignment of the edge rings 1120, the stability of the substrate processing process can be improved.

[0102] Further, in a case where there is a potential difference between the inner ring 1121 lifted by the lift pin 115 and the lower ring 1122, abnormal discharge can occur due to the contact of the inner ring 1121 with the lower ring 1122. According to the substrate support portion 11 of the second embodiment, by suppressing the misalignment of the edge ring 1120, abnormal discharge can also be prevented from occurring.

[0103] In addition, when the inner ring 1121 lifted by the lift pin 115 is lowered and placed on the support portion 1122b of the lower ring 1122, the protrusions 1122i of the lower ring 1122 enter the grooves 1121c of the inner ring 1121, and the protrusions 1122i and the grooves 1121c abut, whereby the adjustment of the center position can be performed. Therefore, even in a case where the inner ring 1121 lifted by the lift pin 115 is misaligned due to thermal expansion or the like, by lowering and placing the inner ring 1121 on the support portion 1122b of the lower ring 1122, the center position can be adjusted.

[0104] Further, the protrusions 1122i and the grooves 1121c are configured to contact each other at a single contact point P1. For this reason, the lower surface of the inner ring 1121 and the upper surface of the support portion 1122b of the lower ring 1122 can be brought into contact with each other.

[0105] Note that, as for the grooves 1121c formed in the inner ring 1121, as shown in Figure 11A , a configuration in which the cross section thereof is circular arc-shaped when viewed in the radial direction is described as an example, but is not limited thereto. Figures 12A-12B is another example for describing the positioning structure of the inner ring 1121.

[0106] As shown in Figure 12A , the cross section of the groove 1121c can also be a configuration in which it is inverted V-shaped when viewed in the radial direction. Further, the protrusions 1122i and the grooves 1121c are configured to contact each other at a single contact point P2. For this reason, the lower surface of the inner ring 1121 and the upper surface of the support portion 1122b of the lower ring 1122 can be brought into contact with each other.

[0107] As shown in Figure 12B , the cross section of the groove 1121c is inverted V-shaped when viewed in the radial direction, and the protrusions 1122i and the grooves 1121c are configured to contact each other at two contact points P31, P32. That is, the three protrusions 1122i formed in the lower ring 1122 and the three grooves 1121c formed in the inner ring 1121 contact each other at a total of six contact points. For this reason, a kinematic coupling can be configured, and thus the positioning accuracy of the inner ring 1121 with respect to the lower ring 1122 can be further improved.

[0108] It should be noted that, although not shown in the figure, the groove 1121c can also be configured such that its cross-section is arc-shaped when viewed radially, with the protrusions 1122i and the groove 1121c contacting each other at two contact points. That is, the three protrusions 1122i formed on the lower ring 1122 and the three grooves 1121c formed on the inner ring 1121 contact each other at a total of six contact points. Accordingly, motion coupling can be formed, thereby further improving the positioning accuracy of the inner ring 1121 relative to the lower ring 1122.

[0109] <Positioning structure of cover ring 1123>

[0110] In addition, such as Figure 10 As shown, the substrate support portion 11 of the second embodiment has a positioning structure for positioning the cover ring 1123 relative to the lower ring 1122. The positioning structure of the cover ring 1123 includes a groove (fourth groove) 1122j provided on the upper surface of the flange portion 1122d of the lower ring 1122 and a protrusion (second protrusion) 1123a provided on the lower surface of the inner circumferential side of the cover ring 1123 (the portion disposed above the flange portion 1122d). The protrusion 1123a, similar to the protrusion 1122i, has a spherical shape. The groove 1122j, similar to the groove 1121c, is an elongated hole, and its cross-section is arc-shaped or inverted V-shaped when viewed radially along the electrostatic chuck 1111, and its longitudinal direction is consistent with the radial direction of the electrostatic chuck 1111. It should be noted that it can also be configured as follows: a protrusion is provided on the upper surface of the flange portion 1122d of the lower ring 1122, and a groove is provided on the lower surface of the inner circumferential side of the cover ring 1123.

[0111] also, Figure 10 The positioning structure of the cover ring 1123 shown can also be applied to Figure 3 The substrate support portion 11 of the first embodiment shown in the figure.

[0112] The embodiments disclosed above include, for example, the following aspects.

[0113] (Postscript 1)

[0114] A substrate processing apparatus comprising:

[0115] An electrostatic chuck has a substrate support surface and a ring support surface, wherein the ring support surface has a first through hole for inserting a lifting pin;

[0116] The edge ring is supported by the ring support surface; and

[0117] A cylindrical component is inserted into the first through hole of the electrostatic chuck and has a second through hole.

[0118] The cylindrical component has

[0119] a first shaft portion inserted into the first through-hole of the electrostatic chuck; and

[0120] a first head portion, when the first shaft portion is inserted into the first through-hole of the electrostatic chuck, the first head portion is a portion disposed above the ring support surface of the electrostatic chuck,

[0121] the edge ring has a first groove portion provided to a lower surface of the edge ring and used to dispose the first head portion.

[0122] (Note 2)

[0123] The substrate processing apparatus according to Note 1, wherein the first groove portion is an elongated hole having a radial direction of the electrostatic chuck as a longitudinal direction.

[0124] (Note 3)

[0125] The substrate processing apparatus according to Note 1 or Note 2, wherein a diameter of the first head portion is larger than a diameter of the first shaft portion.

[0126] (Note 4)

[0127] The substrate processing apparatus according to any one of Notes 1 to 3, wherein the first through-hole of the electrostatic chuck, the cylindrical member inserted into the first through-hole, and the first groove portion of the edge ring are respectively provided three in a circumferential direction.

[0128] (Note 5)

[0129] The substrate processing apparatus according to any one of Notes 1 to 4, wherein

[0130] the edge ring has

[0131] a lower ring supported by the ring support surface; and

[0132] an inner ring disposed above the lower ring,

[0133] the lower ring has

[0134] a first countersunk groove portion as the first groove portion; and

[0135] a third through-hole communicating with the first countersunk groove portion, penetrating from a lower surface to an upper surface of the lower ring, and communicating with the second through-hole of the cylindrical member to be able to insert the lift pin.

[0136] (Note 6)

[0137] The substrate processing apparatus according to Note 5, further comprising:

[0138] a guide pin having a second shaft portion and a second head portion having a diameter larger than a diameter of the second shaft portion,

[0139] wherein the lower ring has

[0140] a second counterbore groove portion provided at a lower surface of the lower ring for positioning the second head portion; and

[0141] a fourth through-hole communicating with the second counterbore groove portion and penetrating from the lower surface to the upper surface of the lower ring for inserting the second shaft portion,

[0142] the inner ring has a second groove portion provided at a lower surface of the inner ring for positioning the second shaft portion protruding from the lower ring.

[0143] (Paragraph 7)

[0144] The substrate processing apparatus according to Paragraph 6, wherein the second groove portion is an elongated hole having a longitudinal direction in a radial direction of the electrostatic chuck.

[0145] (Paragraph 8)

[0146] The substrate processing apparatus according to Paragraph 6 or Paragraph 7, wherein the guide pin, the second counterbore groove portion and the fourth through-hole of the lower ring, and the second groove portion of the inner ring are each provided three in a circumferential direction.

[0147] (Paragraph 9)

[0148] The substrate processing apparatus according to Paragraph 5, wherein

[0149] the lower ring has a convex portion,

[0150] the inner ring has a third groove portion provided at a lower surface of the inner ring for positioning the convex portion of the lower ring.

[0151] (Paragraph 10)

[0152] The substrate processing apparatus according to Paragraph 9, wherein

[0153] the convex portion has a spherical surface shape,

[0154] the third groove portion is an elongated hole having a circular arc shape in a cross section when viewed in a radial direction of the electrostatic chuck, and has a longitudinal direction in the radial direction of the electrostatic chuck.

[0155] (Paragraph 11)

[0156] The substrate processing apparatus according to Paragraph 9, wherein

[0157] the convex portion has a spherical surface shape,

[0158] The third groove is a long hole having a reverse V-shaped cross section when viewed in the radial direction of the electrostatic chuck, and has a longitudinal direction in the radial direction of the electrostatic chuck.

[0159] (Paragraph 12)

[0160] The substrate processing apparatus according to any one of Paragraphs 10 to 11, wherein the convex portion and the third groove contact each other at one point.

[0161] (Paragraph 13)

[0162] The substrate processing apparatus according to any one of Paragraphs 10 to 11, wherein the convex portion and the third groove contact each other at two points.

[0163] (Paragraph 14)

[0164] The substrate processing apparatus according to any one of Paragraphs 9 to 13, wherein three of the convex portions and the third grooves are respectively provided in the circumferential direction.

[0165] (Paragraph 15)

[0166] The substrate processing apparatus according to any one of Paragraphs 9 to 14, further comprising:

[0167] a cover ring surrounding the edge ring,

[0168] wherein either one of the lower ring and the cover ring has a second convex portion,

[0169] the other of the lower ring and the cover ring has a fourth groove for configuring the second convex portion.

[0170] The above describes embodiments of the plasma processing system and the like, but the present disclosure is not limited to the above-described embodiments and the like, and various modifications and improvements can be made within the scope of the gist of the present disclosure recited in the claims.

[0171] Note that this application claims priority from Japanese Patent Application No. 2023-123714 filed on July 28, 2023, and the content of this Japanese Patent Application is incorporated herein in its entirety.

[0172] [Explanation of Reference Signs]

[0173] W substrate

[0174] 1 plasma processing apparatus

[0175] 2 control unit

[0176] 11 substrate support portion

[0177] 15 height adjustment mechanism

[0178] 111 main body

[0179] 111a central region

[0180] 111b annular region

[0181] 112 ring assembly

[0182] 113 cap (cylindrical member)

[0183] 113a through-hole (second through-hole)

[0184] 113b head (first head)

[0185] 113c shaft (first shaft)

[0186] 114 guide pin

[0187] 114a head (second head)

[0188] 114b shaft (second shaft)

[0189] 115 lift pin

[0190] 1110 base

[0191] 1111 electrostatic chuck

[0192] 1111c through-hole (first through-hole)

[0193] 1120 edge ring

[0194] 1121 inner ring (first annular member)

[0195] 1121a cutout portion

[0196] 1121b groove portion (second groove portion)

[0197] 1121c groove portion (third groove portion)

[0198] 1122 lower ring (second annular member)

[0199] 1122a inner circumferential side portion

[0200] 1122b support portion

[0201] 1122c outer circumferential side portion

[0202] 1122d flange portion

[0203] 1122e counterbore groove portion (first groove portion or first counterbore groove portion)

[0204] 1122f through-hole (third through-hole)

[0205] 1122g Head recess (2nd head recess)

[0206] 1122h Through-hole (4th through-hole)

[0207] 1122i Protrusion (1st protrusion)

[0208] 1122j Groove (4th groove)

[0209] 1123 Cover ring

[0210] 1123a Protrusion (2nd protrusion)

[0211] 1124 Insulating ring

Claims

1. A substrate processing apparatus comprising: An electrostatic chuck has a substrate support surface and a ring support surface, wherein the ring support surface has a first through hole for inserting a lifting pin; The edge ring is supported by the ring support surface; and A cylindrical component is inserted into the first through hole of the electrostatic chuck and has a second through hole. in, The cylindrical component has The first shaft portion is inserted into the first through hole of the electrostatic chuck; and The first head, when the first shaft portion is inserted into the first through hole of the electrostatic chuck, is a portion disposed above the annular support surface of the electrostatic chuck. The edge ring has a first groove disposed on the lower surface of the edge ring and used to form the first head.

2. The substrate processing apparatus as claimed in claim 1, wherein, The first groove is an elongated hole with the radial direction of the electrostatic chuck as its longitudinal direction.

3. The substrate processing apparatus as claimed in claim 1, wherein, The diameter of the first head is larger than the diameter of the first shaft.

4. The substrate processing apparatus as claimed in claim 1, wherein, The electrostatic chuck has three circumferentially arranged first through holes, three cylindrical components inserted into the first through holes, and three circumferentially arranged first grooves of the edge ring.

5. The substrate processing apparatus as claimed in claim 1, wherein, The edge ring has The lower ring is supported by the ring support surface; and The inner ring is positioned above the lower ring. The lower ring has The first countersunk groove portion serves as the first trench portion; and The third through hole communicates with the first countersunk groove, extends from the lower surface of the lower ring to the upper surface of the lower ring, and communicates with the second through hole of the cylindrical component in such a way that the lifting pin can be inserted.

6. The substrate processing apparatus as claimed in claim 5, further comprising: The guide pin has a second shaft portion and a second head with a diameter larger than that of the second shaft portion. The lower ring has The second countersunk groove is disposed on the lower surface of the lower ring and is used to set the second head; and The fourth through hole communicates with the second countersunk groove and extends from the lower surface of the lower ring to the upper surface of the lower ring, for inserting the second shaft portion. The inner ring has a second groove disposed on the lower surface of the inner ring and used to provide the second shaft portion protruding from the lower ring.

7. The substrate processing apparatus as claimed in claim 6, wherein, The second groove is an elongated hole with the radial direction of the electrostatic chuck as its longitudinal direction.

8. The substrate processing apparatus as claimed in claim 6, wherein, The guide pin, the second countersunk groove of the lower ring and the fourth through hole, and the second groove of the inner ring are each provided in three circumferential directions.

9. The substrate processing apparatus as claimed in claim 5, wherein, The lower ring has a first protrusion. The inner ring has a third groove disposed on the lower surface of the inner ring and used to provide the first protrusion of the lower ring.

10. The substrate processing apparatus as claimed in claim 9, wherein, The first protrusion has a spherical shape. The third groove is an elongated hole. When viewed radially along the electrostatic chuck, the cross-section of the elongated hole has an arc shape, and the longitudinal direction of the elongated hole is the radial direction of the electrostatic chuck.

11. The substrate processing apparatus as claimed in claim 9, wherein, The first protrusion has a spherical shape. The third groove is an elongated hole. When viewed radially along the electrostatic chuck, the cross-section of the elongated hole has an inverted V-shape, and the longitudinal direction of the elongated hole is the radial direction of the electrostatic chuck.

12. The substrate processing apparatus as claimed in claim 10 or claim 11, wherein, The first protrusion and the third groove are in contact with each other at a point.

13. The substrate processing apparatus as claimed in claim 10 or claim 11, wherein, The first protrusion and the third groove are in contact with each other at two points.

14. The substrate processing apparatus as claimed in claim 9, wherein, The first protrusion and the third groove are respectively provided in three circumferential directions.

15. The substrate processing apparatus as claimed in claim 9, further comprising: Cover ring, surrounding the edge ring, in, Either the lower ring or the cover ring has a second protrusion. The other of the lower ring and the cover ring has a fourth groove for providing the second protrusion.

Images