Laser etching control method and system and electronic equipment

Abstract

The invention discloses a laser etching control method and system and electronic equipment, and relates to the related technical field of laser processing, and the method comprises the steps: adding an etching texture to a control center of the laser etching equipment, and enabling the etching texture to mark microstructure features based on key nodes; a first control block is additionally arranged by introducing curved surface point cloud projection, and a second control block is additionally arranged by optimizing a multi-axis free linkage mode; the etching texture is projected from a two-dimensional plane to a three-dimensional curved surface to execute etching positioning, multi-axis free linkage under cross-scale integration is executed in an idle stroke truncation mode, and a laser etching strategy is determined; and according to the laser etching strategy, driving laser etching equipment to execute automatic laser etching control. The technical problems that in the prior art, etching requirements with special microstructure features are difficult to process accurately, complex three-dimensional curved surface etching cannot be matched efficiently, and consequently laser etching precision is insufficient and efficiency is low are solved, and the technical effect of improving laser etching precision and machining efficiency is achieved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of laser processing, and particularly relates to a laser etching control method and system and electronic equipment. BACKGROUND

[0002] Traditional laser etching methods have many limitations when facing etching tasks with complex microstructure features. On the one hand, for etching texture processing, it is difficult to accurately convert microstructure features based on key nodes into effective etching instructions, resulting in microstructures after etching that cannot meet increasingly stringent precision and performance standards. On the other hand, in terms of laser etching control, existing control modes are difficult to adapt to diversified etching substrate parts. Different substrate materials have different absorption, reflection and heat conduction characteristics of laser. Existing laser etching control methods cannot achieve accurate projection and etching positioning of etching texture from two-dimensional plane to three-dimensional surface. Moreover, they cannot achieve efficient multi-axis free linkage, affecting laser etching precision and efficiency.

[0003] Therefore, in the related art, there are technical problems of being difficult to accurately process etching requirements with special microstructure features, being unable to efficiently match complex three-dimensional surface etching, resulting in insufficient laser etching precision and low efficiency. SUMMARY

[0004] The present application provides a laser etching control method, system and electronic equipment, which solves the technical problems of being difficult to accurately process etching requirements with special microstructure features, being unable to efficiently match complex three-dimensional surface etching, resulting in insufficient laser etching precision and low efficiency in the prior art, and achieves the technical effect of improving laser etching precision and processing efficiency.

[0005] The present application provides a laser etching control method, which comprises: adding an etching texture to a control center of a laser etching device, wherein the etching texture identifies microstructure features based on key nodes; by introducing a curved surface point cloud projection, adding a first control block, by optimizing a multi-axis free linkage mode, adding a second control block, coupling the first control block and the second control block, and embedding them in the control center; determining the substrate material and geometric characteristics of an etching substrate part, taking the geometric characteristics as a constraint, triggering the first control block, projecting the etching texture from a two-dimensional plane to a three-dimensional surface to perform etching positioning, taking the substrate material and microstructure features as a constraint, and performing multi-axis free linkage under cross-scale integration with air travel truncation to determine a laser etching strategy; and driving the laser etching device to perform automatic laser etching control according to the laser etching strategy.

[0006] In a possible implementation, the laser etching control method further performs the following processing: traversing the etching texture to locate etching parameter adjustment positions according to changes in etching requirements; determining microstructure features for each etching parameter adjustment position, wherein the microstructure features are determined according to etching requirements; and mapping the etching parameter adjustment positions and the microstructure features to identify the etching texture.

[0007] In a possible implementation, the laser etching control method further performs the following processing: identifying the geometric characteristics to determine whether to trigger the first control block according to geometric complexity and surface characteristics; if triggered, determining a projection plane, wherein the projection plane is a two-dimensional projection plane based on a preset viewing angle of an etching region, and the projection plane has a position mapping relationship with the etching region; and performing geometric alignment on the etching texture according to the projection plane to determine an etching positioning result.

[0008] In a possible implementation, the laser etching control method further performs the following processing: projecting the etching texture to the projection plane; taking the key nodes as a projection point cloud, performing etching region mapping on the etching texture projected to the projection plane according to the mapping relationship between the projection plane and the etching region, and performing geometric alignment on the projection point cloud to determine the etching positioning result.

[0009] In a possible implementation, the laser etching control method further performs the following processing: determining a laser etching mode, wherein the laser etching mode includes direct etching and modified etching, and the modified etching includes a first modification stage and a second etching stage; determining a plurality of sub-control threads by performing mode decoupling and truncation segmentation according to the laser etching mode, wherein the plurality of sub-control threads have same-level identifiers and precedence order identifiers; determining a plurality of sets of laser parameters for the plurality of sub-control threads according to the microstructure features as requirements and the base material as constraints; and mapping and integrating the plurality of sub-control threads and the plurality of sets of laser parameters as the laser etching strategy.

[0010] In a possible implementation, the laser etching control method further performs the following processing: taking the key nodes as first truncation positions and determining second truncation positions according to trajectory air gaps; and performing truncation segmentation of etching control according to the first truncation positions and the second truncation positions.

[0011] In a possible implementation, the laser etching control method further performs the following processing: based on the laser etching strategy, performing thread control allocation for a control axis of the laser etching device, and driving the control axis to perform etching control under self-driving cooperation; and dynamically tracking an etching process of the control axis, and locating an idle control axis; and based on continuous tracking of the idle control axis and the thread control allocation, performing automatic laser etching control.

[0012] In a possible implementation, the laser etching control method further performs the following processing: based on the laser etching strategy, setting a free threshold for each thread, performing monitoring and control deviation positioning under dynamic tracking based on the free threshold, and determining a rework etching scheme; based on the same-level identifier and the preceding and following bit position identifier, adding a cut-in bit position thread of the rework etching scheme; and adding the cut-in bit position thread and the rework etching scheme into the laser etching strategy.

[0013] The application further provides a laser etching control system, which comprises: an etching texture adding module, configured to add an etching texture to a control center of a laser etching device, wherein the etching texture is identified based on microstructure characteristics of a key node; a control block coupling module, configured to add a first control block by introducing curved surface point cloud projection, add a second control block by optimizing a multi-axis free linkage mode, couple the first control block and the second control block, and embed the coupled control blocks in the control center; a laser etching strategy determining module, configured to determine a base material and geometric characteristics of an etching base part, constrain the laser etching strategy based on the geometric characteristics, trigger the first control block, project the etching texture from a two-dimensional plane to a three-dimensional curved surface to perform etching positioning, constrain the laser etching strategy based on the base material and the microstructure characteristics, and perform multi-axis free linkage under cross-scale integration by cutting off an idle stroke; and a laser etching control module, configured to drive the laser etching device to perform automatic laser etching control based on the laser etching strategy.

[0014] The application further provides an electronic device, which comprises: a memory configured to store executable instructions; and a processor configured to execute the executable instructions stored in the memory to implement a laser etching control method.

[0015] A laser etching control method, system and electronic device are provided to add an etching texture to a control center of a laser etching device, the etching texture identifying a microstructure feature based on a key node; by introducing a curved surface point cloud projection, a first control block is added, and by optimizing a multi-axis free linkage mode, a second control block is added; the etching texture is projected from a two-dimensional plane to a three-dimensional curved surface to perform etching positioning, and a multi-axis free linkage under cross-scale integration is performed by air gap truncation to determine a laser etching strategy; according to the laser etching strategy, the laser etching device is driven to perform automatic laser etching control. The technical problems of being difficult to accurately process etching requirements with special microstructure features, being unable to efficiently match complex three-dimensional curved surface etching, resulting in insufficient laser etching precision and low efficiency are solved, and the technical effects of improving laser etching precision and processing efficiency are achieved. BRIEF DESCRIPTION OF DRAWINGS

[0016] In order to more clearly illustrate the technical solutions of the embodiments of the present disclosure, the drawings of the embodiments of the present disclosure will be briefly introduced below, and a flowchart is used in the present application to illustrate the operations performed by the system according to the embodiments of the present application. It should be understood that the foregoing or the following operations are not necessarily performed in sequence. On the contrary, various steps can be processed in reverse order or simultaneously as needed. At the same time, other operations can also be added to these processes, or one or more steps of operation can be removed from these processes.

[0017] Figure 1 A laser etching control method flowchart is provided for the embodiments of the present application.

[0018] Figure 2 A laser etching control system structure diagram is provided for the embodiments of the present application.

[0019] Figure 3 A structure diagram of an electronic device is provided for the embodiments of the present application Explanation of reference signs: etching texture adding module 10, control block coupling module 20, laser etching strategy determination module 30, laser etching control module 40, input device 401, processor 402, memory 403, output device 404. DETAILED DESCRIPTION

[0020] The above description is only a summary of the technical solutions of the present application, in order to more clearly understand the technical means of the present application, the specific embodiments of the present application can be implemented according to the content of the specification, and in order to make the above and other purposes, features and advantages of the present application more obvious and easy to understand, the following specific embodiments of the present application are described.

[0021] In order to make the purposes, technical solutions and advantages of the present application clearer, the following will further describe the present application in detail with reference to the accompanying drawings, the described embodiments should not be regarded as limitations to the present application, all other embodiments obtained by those skilled in the art without creative work fall within the scope of protection of the present application.

[0022] In the following description, "some embodiments" are referred to, which describe a subset of all possible embodiments, but it can be understood that "some embodiments" can be the same subset or different subsets of all possible embodiments, and can be combined with each other without conflict, the term "first\second" referred to only distinguishes similar objects, and does not represent a specific order for the objects. The terms "include" and "have" and any variations, are intended to cover non-exclusive inclusion, for example, a process, method, system, product or server including a series of steps or units does not have to be limited to those steps or units clearly listed, but can include other steps or modules not clearly listed or inherent to these processes, methods, products or devices. Unless otherwise defined, all technical and scientific terms used herein have the same meaning as understood by those skilled in the art to which the present application belongs. The terms used herein are only for the purpose of describing the embodiments of the present application.

[0023] The embodiments of the present application provide a laser etching control method, as shown in the method comprises: Figure 1 The method comprises: Step S100, adding an etching texture to a control center of a laser etching device, wherein the etching texture identifies microstructure features based on key nodes.

[0024] Preferably, the etching texture refers to a texture expected to be formed on a material surface in laser etching, wherein the etching texture identifies microstructure features based on key nodes, the key nodes are points with special significance in the etching texture, which can be turning points of the shape of the etching texture, points with large curvature change, etc., and the microstructure features describe geometric shapes, sizes, spacings and other characteristics of the etching texture at a microscale, and parameters such as width, height and spacing of the microstructure directly affect the performance and appearance of the material after etching; specifically, the etching texture is identified by the microstructure features of the key nodes, that is, by determining the positions of the key nodes and the corresponding microstructure features, the entire etching texture is accurately described, and thus the detailed information of the etching texture can be more accurately expressed; then the etching texture identified based on the microstructure features of the key nodes is added to the control center, wherein the control center is a core component of the laser etching device, responsible for receiving various instructions and controlling the output motion of the laser, including accurately controlling parameters such as intensity and scanning path of the laser according to the etching texture, so as to etch a texture meeting the requirements on the material surface.

[0025] Further, the step S100 further comprises a step S110 of traversing the etching texture to locate etching parameter adjustment positions according to changes in etching requirements; a step S120 of determining microstructure features for each etching parameter adjustment position, wherein the microstructure features are determined according to the etching requirements; and a step S130 of mapping the etching parameter adjustment positions and the microstructure features to identify the etching texture.

[0026] Preferably, the etching texture is traversed in sequence (e.g. from left to right, from top to bottom) to find positions where laser etching parameters (e.g. laser power, scanning speed, pulse frequency, etc.) need to be adjusted according to changes in etching requirements, wherein different regions may have different requirements for light refraction and reflection, and the etching requirements vary at different positions of the etching texture. For example, when etching a pattern with different depth lines, different laser powers are required for different depths, and the positions where the depth changes are the positions where the parameters need to be adjusted. Then, according to the specific etching requirements, the microstructure features corresponding to each etching parameter adjustment position are determined, i.e. the features of the etching texture at a microscale, such as the shape (e.g. circular, square, triangular, etc.), size (e.g. width, height, diameter, etc.), and spacing of the microstructure, which directly affect the performance and function of the etched material. For example, if the etching requirement is to produce a grating with a specific optical diffraction effect, the microstructure shape (e.g. rectangular grating, sinusoidal grating) and size (e.g. grating period, groove depth) of the grating are determined according to the diffraction requirements. Finally, a mapping relationship between the etching parameter adjustment positions and the microstructure features is established, i.e. each etching parameter adjustment position is associated with a microstructure feature. When laser etching is performed, the corresponding microstructure feature parameters are accurately called according to the etching position, and the mapping relationship is used to assign a clear identification to the etching texture, so that the etching texture becomes an operable object with microstructure feature information. The laser etching equipment can use appropriate parameters for etching at different etching parameter adjustment positions, thereby achieving precise and efficient laser etching.

[0027] The step S200 comprises adding a first control block by introducing a curved surface point cloud projection, adding a second control block by optimizing a multi-axis free linkage mode, coupling the first control block and the second control block, and embedding the control block in the control center.

[0028] Preferably, the curved surface point cloud is a set of discrete points of the object surface obtained by three-dimensional scanning or the like, each point carrying accurate three-dimensional coordinate information and capable of accurately restoring the curved surface shape of the object. For laser etching, the object to be processed has a complex curved surface, and it is extremely difficult to directly plan the etching path based on three-dimensional data. Therefore, the curved surface point cloud is projected, i.e., the complex three-dimensional point cloud data is projected onto a two-dimensional plane, greatly reducing the complexity of subsequent data processing and path planning. A first control block is added to process the projected two-dimensional data, including planning the scanning path and parameters of the laser in the two-dimensional plane according to the two-dimensional pattern information, such as determining the starting scanning position, scanning sequence, and speed of the laser.

[0029] Preferably, the laser etching equipment is usually equipped with multiple motion axes, such as X, Y, and Z linear axes and rotating axes, and the multi-axis free linkage aims to coordinate the operation of these multiple axes, so that the laser head can move flexibly in three-dimensional space to meet the etching requirements of different shapes and angles. Specifically, the multi-axis free linkage mode is optimized by improving the control algorithm, such as using more advanced PID control algorithm to optimize the response speed and accuracy of each axis movement, and by optimizing the mechanical structure, such as enhancing the rigidity of the transmission components to reduce the vibration and deviation during movement, improving the coordination and accuracy of the movement between axes, reducing the error and delay in the movement process, thereby improving the quality and efficiency of etching. A second control block is added to manage and regulate the optimized multi-axis free linkage mode, i.e., according to the detailed requirements of the etching task, the movement parameters of each axis are calculated and adjusted in real time, such as when etching a mold with a complex curved surface, when the laser head approaches an area with large curvature change of the curved surface, the second control block rapidly increases the movement speed or adjusts the acceleration of a certain axis, while reducing the speed of other axes, to ensure that the laser head can accurately and smoothly etch along the curved surface shape.

[0030] Preferably, the first control block and the second control block are coupled, that is, information interaction between the first control block and the second control block is established. The two-dimensional scanning path information generated by the first control block is transmitted to the second control block in real time. The second control block calculates the specific motion parameters of each motion axis according to the actual coordinates of the current etching position in the three-dimensional space. At the same time, the second control block feeds back the actual motion state of each axis (such as whether the predetermined position is reached, whether deviation occurs in the motion process, etc.) to the first control block. The first control block adjusts the two-dimensional scanning path according to the feedback information to ensure that the two-dimensional planning and three-dimensional motion control can be seamlessly connected, so that the laser etching process is more accurate and efficient. Finally, the coupled first control block and second control block are embedded and deployed to the control center. The control center can directly call the functions of the first control block and the second control block. After the operator inputs the related parameters of the etching task (such as the three-dimensional model of the workpiece, the etching texture requirements, etc.), the control center can automatically coordinate the work of the first control block and the second control block according to the task requirements, select the appropriate control strategy, and realize the automation and intelligentization of the entire laser etching process.

[0031] In step S300, the base material and geometric characteristics of the etching base part are determined. The etching texture is projected from a two-dimensional plane to a three-dimensional curved surface for etching positioning under the constraint of the geometric characteristics. The multi-axis free linkage under cross-scale integration is performed with the base material and microstructure characteristics as constraints, and the laser etching strategy is determined.

[0032] Preferably, the base material and geometric characteristics of the etching base part are determined. Different base materials have different absorption, reflection and heat conduction characteristics to laser, such as metal materials (such as aluminum alloy, stainless steel), ceramic materials, and high polymer materials (such as polytetrafluoroethylene), which directly affect the effect of laser etching, including etching speed, etching depth, and surface quality. The geometric characteristics include the shape (such as plane, curved surface, and complex special-shaped structure) and size (length, width, height, and radius of curvature) of the etching base part. The more complex the geometric shape, the more difficult the path planning and control of laser etching. For example, an optical lens with a free curved surface affects the projection and positioning of the laser etching texture. Then, the first control block is triggered under the constraint of the determined etching base material and geometric characteristics. According to the two-dimensional etching texture information and the three-dimensional geometric characteristics (such as the shape and size of the curved surface) of the part, the etching texture is accurately mapped from a two-dimensional plane to a three-dimensional curved surface for etching positioning, that is, the accurate position of each etching in the three-dimensional space is determined.

[0033] Preferably, the laser parameters are selected according to the material properties and the microstructure size and shape features, and the cross-scale integration under multi-axis free linkage is performed with air travel truncation, specifically, the air travel refers to the movement of the laser head from one etching position to the next etching position without etching, and the air travel truncation refers to the optimization of path planning to reduce unnecessary air travel and improve etching efficiency, for example, when etching multiple dispersed small areas, the path is reasonably planned to minimize the movement of the laser head through areas that do not need to be etched, thereby improving etching efficiency. Finally, the cross-scale integration under multi-axis free linkage is performed, wherein the cross-scale integration means that both the etching requirements on the entire part on the macro scale (such as the machining of the overall shape) and the microstructure feature etching on the micro scale (such as the fine structure at the nanometer level) are met; the multi-axis free linkage is the coordinated movement of multiple motion axes (such as X, Y, Z axes and rotation axes, etc.) to enable the laser head to move flexibly in three-dimensional space to meet the etching requirements of different scales, thereby determining the laser etching strategy, including when to start and stop the laser, the movement speed and acceleration of each axis at different stages, etc., to achieve high-quality laser etching machining.

[0034] Further, step S300 further comprises step S310 of identifying the geometric characteristics to determine whether to trigger the first control block according to the geometric complexity and the surface characteristics; step S320 of determining the projection plane if triggered, wherein the projection plane is a two-dimensional projection plane based on the preset viewing angle of the etching area, and the projection plane has a position mapping with the etching area; and step S330 of geometrically aligning the etching texture according to the projection plane to determine the etching positioning result.

[0035] Preferably, the geometric characteristics of the etching base part are comprehensively identified, including its shape, size, surface curvature, whether there is a step structure (such as a part surface with a significant high-low difference), etc. to determine whether to trigger the first control block according to the geometric complexity and the surface characteristics. Specifically, the geometric complexity mainly reflects the case where the etching pattern crosses multiple step structure positions. When the etching pattern needs to be etched on different parts with high-low difference, the height and position difference of different step structures make it difficult for the laser etching equipment to accurately determine the three-dimensional coordinates of each etching point. The surface characteristics include the curvature change of the surface and the extension and stretching condition, etc. If the extension and stretching under the surface cannot guarantee the adaptation of direct mapping (i.e. applying two-dimensional etching texture to three-dimensional surface), it means that the etching texture cannot be simply applied to the surface. Through the analysis of the geometric complexity and the surface characteristics, if the geometric conditions of the etching base part make it difficult to directly position and map, the first control block is triggered for more complex processing.

[0036] Preferably, after determining that the first control block needs to be triggered, a projection plane is determined, wherein the projection plane is a two-dimensional projection plane obtained based on a preset viewing angle of the etching region, the selection of the preset viewing angle depends on the geometric characteristics of the etching region and etching requirements, a position mapping relationship is established between the projection plane and the etching region, indicating that each point on the projection plane corresponds to a specific position on the etching region (three-dimensional curved surface), and information on the two-dimensional projection plane is accurately converted to the three-dimensional etching region through the mapping relationship; then, according to the determined projection plane, the etching texture is geometrically aligned with the projection plane, that is, the etching texture is adjusted and matched according to the geometric rules of the projection plane, for example, the shape, size, etc. of the etching texture is aligned with the coordinate system on the projection plane, so as to conform to the geometric characteristics of the projection plane, and then the position and direction of the etching texture on the projection plane are accurately determined, and in combination with the position mapping relationship between the projection plane and the etching region, the etching texture can be accurately positioned on the three-dimensional etching region, so as to obtain the etching positioning result, ensuring that the laser can accurately etch on the etching region as expected, and realizing precise laser etching.

[0037] Further, step S330 further includes step S331 of projecting the etching texture to the projection plane; and step S332 of taking the key nodes as a projection point cloud, and performing etching region mapping on the etching texture projected to the projection plane according to the mapping between the projection plane and the etching region, to perform geometric alignment with the projection point cloud, and determine the etching positioning result.

[0038] Preferably, the etching texture is projected to the projection plane, that is, the etching texture is converted and displayed on the two-dimensional projection plane from the three-dimensional space through parallel projection or perspective projection, the key points of the etching texture are regarded as point cloud data (i.e. point cloud projection), and then according to the mapping between the projection plane and the etching region, the etching texture projected to the projection plane is corresponded to the actual etching region (three-dimensional curved surface) according to its position and shape on the projection plane, that is, through the mapping between the projection plane and the etching region, the two-dimensional etching texture pattern is restored and converted to the three-dimensional etching region to determine its actual position and range in the three-dimensional space; and then geometric alignment is performed with the projection point cloud, that is, the etching texture mapped to the etching region is compared and matched with the actual etching region in terms of geometric shape and position, the position and direction of the etching texture on the etching region are further adjusted and refined, for example, whether the positions of the key nodes on the etching region are consistent with the expectation is checked, if not, the position of the etching texture is fine-tuned according to the actual situation, the accurate position and direction of the etching texture on the etching region are finally determined as the etching positioning result, which is used to accurately guide the laser etching operation, ensuring that the laser can accurately process the etching region at the predetermined position and direction, so as to realize the expected etching effect.

[0039] Further, step S300 further comprises step S340 of determining a laser etching mode, wherein the laser etching mode comprises direct etching and modified etching, and the modified etching comprises a first modification stage and a second etching stage; step S350 of determining a plurality of sub-control threads by performing mode decoupling and truncation segmentation according to the laser etching mode, wherein the plurality of sub-control threads have same-level identifiers and precedence bit identifiers; step S360 of determining a plurality of sets of laser parameters for the plurality of sub-control threads with the microstructure features as requirements and the substrate material as constraints; and step S370 of mapping and integrating the plurality of sub-control threads and the plurality of sets of laser parameters as the laser etching strategy.

[0040] Preferably, the laser etching mode comprises direct etching and modified etching, the direct etching refers to directly using laser to etch the substrate material to remove the material to form the required microstructure or pattern, and the modified etching comprises a first modification stage and a second etching stage, in the first modification stage, laser processes the substrate material but does not directly remove the material, but changes the surface properties or microstructure of the material, for example, changes the atomic structure of the material surface or changes the chemical properties of the material surface by laser irradiation, and in the second etching stage, etching operation is performed again to achieve better etching effect.

[0041] Preferably, mode decoupling is performed according to the laser etching mode, that is, the laser etching mode (direct etching or modified etching) is decomposed into different components, and then truncation segmentation is performed, that is, the entire etching process is segmented into a plurality of sub-processes according to certain rules (such as time, space or operation type), and a plurality of sub-control threads are determined, wherein each sub-control thread has same-level identifiers and precedence bit identifiers, the same-level identifiers indicate that the sub-control threads are logically at the same level, and the precedence bit identifiers clearly indicate the execution order in the etching process, for example, in the modified etching, the sub-control thread of the first modification stage is executed before the sub-control thread of the second etching stage, but still belongs to the same level of operation.

[0042] Preferably, different microstructure features (such as shape, size, pitch, etc. of the microstructure) have different requirements for laser parameters, the power, pulse frequency, scanning speed, etc. of the laser are adjusted according to the microstructure features to realize specific microstructure and ensure the etching precision; the substrate material is taken as a constraint, including limiting the laser parameters according to the properties of the substrate material, and then determining a suitable set of laser parameters for each sub-control thread according to the specific task of each sub-control thread, at the same time, the laser etching equipment usually has multiple control axes (such as X, Y, Z axes and rotation axes, etc.), and the multiple control axes are freely distributed in actual operation, the overall etching requirement is truncated into a plurality of sub-control threads, and the positioning track (i.e. the movement path of the laser in the etching area) of each sub-control thread and the corresponding laser parameters are determined.

[0043] Preferably, according to the order of the sub-control threads, a control thread is first allocated to each axis, allowing the axes to be autonomously controlled under the respective control thread while achieving synchronous driving, i.e., each axis moves according to the instructions of the respective control thread, but remains coordinated to ensure that the laser can etch according to the predetermined trajectory. Due to the adaptability of the truncation, the end time of each thread control is different, i.e., different sub-control threads may contain different operation complexity and etching tasks, and the execution time is different. Once there is an idle axis (i.e., an axis has completed the task of the current control thread and is in an idle state), it is immediately allocated a thread again to continue the etching operation. In this way, the entire etching operation is completed. Finally, the determined multiple sub-control threads and the corresponding multiple sets of laser parameters are mapped and integrated, i.e., each sub-control thread is associated with the corresponding laser parameters to form a laser etching strategy, which describes the execution order of each sub-control thread, the corresponding laser parameters, and the movement mode of each control axis during the entire etching process, ensuring that the etching task can be completed efficiently and accurately.

[0044] Further, step S350 further comprises step S351 of taking the key node as a first truncation position to determine a second truncation position based on the trajectory air gap; and step S352 of performing truncation segmentation of etching control based on the first truncation position and the second truncation position.

[0045] Preferably, the key node is taken as the first truncation position to divide the entire etching process according to the geometric features of the pattern, which helps to more accurately control the etching process; the second truncation position is determined based on the trajectory air gap, i.e., a suitable position in the trajectory air gap is selected as a truncation point for truncation segmentation, which better optimizes the movement path and etching sequence of the laser, avoids unnecessary air gap movement, and improves etching efficiency; then the first truncation position and the second truncation position are integrated to perform truncation segmentation of etching control, i.e., the entire etching process is divided into multiple sub-tasks according to these truncation positions, each sub-process has a clear start and end position, as well as corresponding etching control parameters and movement trajectories. Through truncation segmentation, the process of laser etching is more finely controlled, and the parameters (such as power, frequency, etc.) and movement modes (such as scanning speed, path, etc.) of the laser are adjusted according to the characteristics and requirements of different sub-processes to achieve more accurate and efficient etching effect.

[0046] Step S400 drives the laser etching device to perform automatic laser etching control according to the laser etching strategy.

[0047] Preferably, the laser etching strategy includes laser etching mode (direct etching or modified etching, etc.), arrangement of sub-control threads (including the order of each sub-control thread, execution sequence, etc.), multiple sets of laser parameters (such as laser power, pulse frequency, scanning speed, etc.), and the movement mode of the control axis, etc. According to the laser parameters determined in the etching strategy, the laser etching equipment is driven, that is, the parameters of the laser generator are automatically adjusted to meet the needs of different etching stages and microstructure characteristics; then, according to the requirements of each sub-control thread for the control axis in the etching strategy, the multiple axes of the laser etching equipment are driven to move cooperatively, for example, according to the pre-planned etching path, the X-axis and Y-axis are controlled to move the laser head on the plane, and the height of the Z-axis is adjusted as needed to adapt to the etching surface of different heights; at the same time, each sub-control thread is executed in turn according to the order of the sub-control thread and the synchronization requirements, and the completion of each sub-control thread and the running state of the equipment are monitored in real time during the execution process. If a sub-control thread is completed, the next sub-control thread is started immediately according to the strategy arrangement to ensure the continuity and smoothness of the etching process; also, through various sensors (such as position sensors, power sensors, etc.), relevant information in the etching process is monitored and fed back in real time, such as the actual position of the laser head, the actual output value of the laser power, etc. Compared with the expected value in the etching strategy, if a deviation is found, it will be automatically adjusted. Finally, a microstructure pattern that meets the design requirements is formed on the etched base part, realizing automatic laser etching control and improving etching precision and efficiency.

[0048] Further, step S500 further includes step S510, based on the laser etching strategy execution thread control allocation, driving the control axis to perform etching control under self-driving cooperation, with the same level identifier and the order of the bit identifier as constraints; step S520, dynamically tracking the etching process of the control axis and positioning the idle control axis; step S530, performing automatic laser etching control based on continuous tracking of the idle control axis and thread control allocation.

[0049] Preferably, according to the laser etching strategy, different sub-control threads are allocated to each control axis of the laser etching equipment according to the same level identifier and the precedence order identifier, and each control axis will execute the corresponding operation according to the allocated sub-control thread. For example, for the X-axis, Y-axis and Z-axis, according to the precedence order identifier, in the first stage, the X-axis and Y-axis can be allocated sub-control threads for controlling the laser head to move to the starting etching position on the plane, and the Z-axis can be allocated sub-control threads for adjusting the height of the laser head to adapt to the surface of the workpiece. Then, the control axes are driven to execute etching control under self-driving cooperation, that is, multiple control axes are driven to work cooperatively to ensure the smooth progress of the laser etching process. Through the sensor, the working state and position information of each control axis during the laser etching process are obtained in real time, the etching process is dynamically tracked, it is determined whether the control axis reaches the predetermined position, and it is determined whether the progress of the control axis executing the sub-control thread meets the expectation, including determining which control axis has completed the task of the currently allocated sub-control thread and is in an idle state, and positioning it as an idle control axis. Finally, the located idle control axis is continuously tracked and monitored, and according to the laser etching strategy and the current etching progress, a new sub-thread is allocated to the idle control axis. Through continuous tracking of the idle control axis and re-allocating tasks, each control axis of the laser etching equipment is always in a high-efficiency utilization state, continuously and stably executes the etching task, so as to realize the automation and high efficiency of the entire laser etching process.

[0050] Further, step S500 further includes step S540 of setting a free threshold for each thread according to the laser etching strategy; step S550 of monitoring and control deviation positioning under dynamic tracking with the free threshold as a constraint to determine a rework etching scheme; step S560 of adding a cut-in order thread of the rework etching scheme according to the same level identifier and the precedence order identifier; and step S570 of adding the cut-in order thread and the rework etching scheme into the laser etching strategy.

[0051] Preferably, different sub-control threads perform different tasks in laser etching. For example, some are responsible for positioning and moving the laser head, while others are responsible for adjusting the laser power output. The operations contained in each thread have different ways and degrees of influence on the etching results. A free threshold is set for each thread. The free threshold is the allowable fluctuation range set for each sub-control thread in the laser etching strategy to define the acceptable deviation range of the etching situation. Then, the free threshold is used as a constraint for dynamic tracking and deviation positioning. That is, the position information of each control axis, the actual parameters of the laser (such as power, frequency, etc.), and the relevant data of the etching area (such as etching depth, surface roughness, etc.) are monitored and acquired in real time. These are compared with the free threshold set for each sub-control thread. If the actual running data exceeds the free threshold range, the sub-control thread in which the deviation occurred and the specific deviation content are accurately located. Based on the result of the control deviation positioning, a corresponding rework etching plan is formulated to compensate for the processing defects. If the laser power is too high and the etching is too deep, the rework etching plan reduces the laser power and adjusts the etching time or number of scans to ensure the continuity of the entire etching process and the quality of the final etching effect.

[0052] Preferably, based on the requirements of the resuming etching scheme and combining the existing peer and priority identifiers, the specific position in the entire etching process at which the resuming etching scheme should be executed is determined. For example, the original etching strategy is to perform large-area coarse etching first, followed by fine etching. If defects are found during the coarse etching process that need to be compensated, the entry point of the resuming etching scheme may be set after the coarse etching stage and before the fine etching stage, based on the priority identifier. At the same time, peer identifiers are considered to ensure that the resuming etching scheme is coordinated with etching operations at the same logical level. Finally, the resuming etching scheme with the determined entry point is added to the laser etching strategy, that is, the original laser etching strategy is updated and improved, so that the laser etching equipment can accurately perform the corresponding compensation operation at the appropriate time and etching stage according to the updated laser etching strategy, thereby improving the quality and stability of laser etching.

[0053] In the above text, refer to Figure 1 A laser etching control method according to an embodiment of the present invention has been described in detail. Next, reference will be made to... Figure 2 A laser etching control system according to an embodiment of the present invention is described.

[0054] A laser etching control system according to an embodiment of the present invention addresses the technical problems in the prior art, namely, the difficulty in accurately processing etching requirements with special microstructural features and the inability to efficiently match the etching of complex three-dimensional curved surfaces, resulting in insufficient laser etching accuracy and low efficiency. This system achieves the technical effect of improving laser etching accuracy and processing efficiency. Figure 2As shown, a laser etching control system includes: an etching texture adding module 10, a control block coupling module 20, a laser etching strategy determining module 30, and a laser etching control module 40.

[0055] The etching texture adding module 10 is configured to add an etching texture to a control center of a laser etching device, wherein the etching texture identifies microstructure features based on key nodes; the control block coupling module 20 is configured to add a first control block by introducing curved surface point cloud projection, add a second control block by optimizing a multi-axis free linkage mode, couple the first control block and the second control block, and embed the coupled control blocks in the control center; the laser etching strategy determining module 30 is configured to determine a base material and geometric characteristics of an etching base part, trigger the first control block based on the geometric characteristics as a constraint, project the etching texture from a two-dimensional plane to a three-dimensional curved surface to perform etching positioning, perform multi-axis free linkage under cross-scale integration by cutting off an idle stroke based on the base material and the microstructure features as constraints, and determine a laser etching strategy; and the laser etching control module 40 is configured to drive the laser etching device to perform automatic laser etching control according to the laser etching strategy.

[0056] Next, a specific configuration of the etching texture adding module 10 will be described in detail. The etching texture adding module 10 further includes: traversing the etching texture to locate etching parameter adjustment positions according to changes in etching requirements; determining microstructure features for each etching parameter adjustment position, wherein the microstructure features are determined based on etching requirements; and mapping the etching parameter adjustment positions and the microstructure features to identify the etching texture.

[0057] Next, a specific configuration of the laser etching strategy determining module 30 will be described in detail. The laser etching strategy determining module 30 further includes: identifying the geometric characteristics to determine whether to trigger the first control block based on geometric complexity and curved surface characteristics; if triggered, determining a projection plane, wherein the projection plane is a two-dimensional projection plane based on a preset viewing angle of an etching region, and the projection plane and the etching region have a position mapping relationship; and performing geometric alignment on the etching texture based on the projection plane to determine an etching positioning result.

[0058] Next, a specific configuration of the laser etching strategy determining module 30 will be described in detail. The laser etching strategy determining module 30 further includes: projecting the etching texture to the projection plane; taking the key nodes as a projection point cloud, performing etching region mapping on the etching texture projected to the projection plane based on the mapping relationship between the projection plane and the etching region, and performing geometric alignment on the projection point cloud to determine the etching positioning result.

[0059] Next, the specific configuration of the laser etching strategy determination module 30 will be described in detail. The laser etching strategy determination module 30 further comprises: determining a laser etching mode, wherein the laser etching mode comprises direct etching and modified etching, and the modified etching comprises a first modified stage and a second etching stage; determining a plurality of sub-control threads by performing mode decoupling and truncation segmentation according to the laser etching mode, wherein the plurality of sub-control threads have a same level identifier and a chronological position identifier; determining a plurality of sets of laser parameters for the plurality of sub-control threads with the microstructure features as a requirement and the substrate material as a constraint; and mapping and integrating the plurality of sub-control threads and the plurality of sets of laser parameters as the laser etching strategy.

[0060] Next, the specific configuration of the laser etching strategy determination module 30 will be described in detail. The laser etching strategy determination module 30 further comprises: taking the key node as a first truncation position and determining a second truncation position based on a track air gap; and performing truncation segmentation of etching control according to the first truncation position and the second truncation position.

[0061] Next, the specific configuration of the laser etching control module 40 will be described in detail. The laser etching control module 40 further comprises: performing thread control allocation based on the laser etching strategy for a control axis of the laser etching equipment, driving the control axis to perform etching control under self-driving cooperation, with the same level identifier and the chronological position identifier as constraints; dynamically tracking the etching process of the control axis and locating an idle control axis; and performing automatic laser etching control based on continuous tracking and thread control allocation of the idle control axis.

[0062] Next, the specific configuration of the laser etching control module 40 will be described in detail. The laser etching control module 40 further comprises: setting a free threshold for each thread of the laser etching strategy; performing monitoring and control deviation positioning under dynamic tracking with the free threshold as a constraint, and determining a rework etching scheme; adding a cut-in position thread of the rework etching scheme according to the same level identifier and the chronological position identifier; and adding the rework etching scheme into the laser etching strategy with the cut-in position thread.

[0063] The laser etching control system provided in the embodiments of the present application can perform the laser etching control method provided in any of the embodiments of the present application, and has the corresponding functional modules and beneficial effects of the execution method.

[0064] Figure 3 is a structural schematic diagram of an electronic device provided by the embodiments of the present application, and shows a block diagram of an exemplary electronic device suitable for implementing the embodiments of the present application. Figure 3The electronic device shown is merely an example and should not impose any limitation on the function and use range of the embodiments of the present application. The electronic device is in the form of a general computing device, and its components can include, but are not limited to, an input device 401, a processor 402, a memory 403, and an output device 404. The processor 402 can be one or more; the memory 403 can include a computer readable medium and at least one program product having a set of (at least one) program modules configured to perform the functions of the embodiments of the present application.

[0065] The memory 403 shown in the embodiments of the present application can employ any combination of one or more computer readable media; the computer readable storage media can be, but is not limited to, an infrared ray, a semiconductor system, a device, or a component, or a combination of any of the above, for storing software programs, computer executable programs, and modules, such as program instructions / modules corresponding to the laser etching control method in the embodiments of the present application. The processor 402 performs various function applications and data processing of the computer device by running the software programs, instructions, and modules stored in the memory 403, i.e., implements the above-mentioned laser etching control method.

[0066] Although the present application makes various references to certain modules in the system according to the embodiments of the present application, however, any number of different modules can be used and run on the user terminal and / or the server, and the various units and modules included are only divided according to the functional logic, but are not limited to the above division, as long as the corresponding functions can be implemented; in addition, the specific names of the functional units are only for easy mutual differentiation, and do not limit the protection scope of the present application.

[0067] The above specific embodiments do not constitute a limitation on the protection scope of the present application. Those skilled in the art should understand that various modifications, combinations, and substitutions can be made according to design requirements and other factors. Any modification, equivalent substitution, and improvement made within the spirit and principles of the present application should be included in the protection scope of the present application.

Claims

1. A method of controlling laser etching, characterized by, The method comprises: adding an etching texture to a control center of a laser etching device, wherein the etching texture identifies microstructure features based on key nodes; by introducing a curved surface point cloud projection, adding a first control block, by optimizing a multi-axis free linkage mode, adding a second control block, coupling the first control block and the second control block, and embedding in the control center; determining the base material and geometric characteristics of the etching base part, taking the geometric characteristics as constraints, triggering the first control block, projecting the etching texture from a two-dimensional plane to a three-dimensional curved surface to perform etching positioning, taking the base material and microstructure features as constraints, and performing multi-axis free linkage under cross-scale integration with air travel truncation to determine a laser etching strategy; driving the laser etching device to perform automatic laser etching control according to the laser etching strategy.

2. The method of claim 1, wherein the laser beam is focused on the surface of the workpiece to form a laser beam spot having a diameter of 0.1 to 100 μm. The etching texture identifies microstructure features based on key nodes, comprising: traversing the etching texture to locate etching parameter adjustment positions according to changes in etching requirements; determining microstructure features for each etching parameter adjustment position, wherein the microstructure features are determined based on etching requirements; mapping the etching parameter adjustment positions and the microstructure features to identify the etching texture.

3. The method of claim 1, wherein the laser beam is focused on the surface of the workpiece to form a laser beam spot having a diameter of 0.1 to 100 μm. Taking the geometric characteristics as constraints, triggering the first control block, projecting the etching texture from a two-dimensional plane to a three-dimensional curved surface to perform etching positioning, comprising: identifying the geometric characteristics to determine whether to trigger the first control block based on geometric complexity and curved surface characteristics; if triggered, determining a projection plane, wherein the projection plane is a two-dimensional projection plane based on a preset viewing angle of the etching area, and the projection plane and the etching area have a position mapping; geometrically aligning the etching texture according to the projection plane to determine etching positioning results.

4. The method of claim 3, wherein the laser beam is focused on the surface of the workpiece to form a laser beam spot having a diameter of 0.1 to 10 μm. Geometrically aligning the etching texture according to the projection plane, comprising: projecting the etching texture onto the projection plane; taking the key nodes as projection point clouds, performing etching area mapping on the etching texture projected onto the projection plane according to the mapping between the projection plane and the etching area, and geometrically aligning the projection point clouds to determine the etching positioning results.

5. The method of claim 1, wherein the laser beam is focused on the surface of the workpiece to form a laser beam spot having a diameter of 0.1 to 100 μm. Taking the base material and microstructure features as constraints, performing multi-axis free linkage under cross-scale integration with air travel truncation, comprising: determining a laser etching mode, wherein the laser etching mode includes direct etching and modified etching, and the modified etching includes a first modification stage and a second etching stage; determining a plurality of sub-control threads by performing mode decoupling and truncation segmentation according to the laser etching mode, wherein the plurality of sub-control threads have same-level identification and sequential position identification; determining a plurality of sets of laser parameters for the plurality of sub-control threads based on the microstructure features as requirements and the base material as constraints; mapping and integrating the plurality of sub-control threads and the plurality of sets of laser parameters as the laser etching strategy.

6. A method of controlling laser ablation as claimed in claim 5, wherein, Performing truncation segmentation, comprising: taking the key nodes as first truncation positions and determining second truncation positions based on trajectory air travel; According to the first cutting position and the second cutting position, a cutting segmentation of etching control is performed.

7. The method of claim 5, wherein the laser beam is focused on the surface of the workpiece to a spot size of about 0.1 to 10 microns. Driving the laser etching equipment to perform automatic laser etching control, including: With the same level identifier and the precedence bit position identifier as constraints, for the control axis of the laser etching equipment, thread control allocation is performed based on the laser etching strategy, and the control axis is driven to perform etching control under self-driving cooperation; Dynamically tracking the etching process of the control axis, and positioning the idle control axis; Based on the continuous tracking of the idle control axis and the thread control allocation, the automatic laser etching control is performed.

8. The method of claim 7, wherein the laser beam is focused on the surface of the workpiece to a spot size of less than 100 microns. After performing the automatic laser etching control, including: For the laser etching strategy, a free threshold is set thread by thread; With the free threshold as a constraint, monitoring and control deviation positioning under dynamic tracking are performed to determine a rework etching scheme; According to the same level identifier and the precedence bit position identifier, an entry bit position thread of the rework etching scheme is added; The entry bit position thread is added to the laser etching strategy as the rework etching scheme.

9. A laser engraving control system, characterized by, The system is used to implement the laser etching control method of any one of claims 1-8, and the system includes: An etching texture adding module is used to add etching texture to the control center of the laser etching equipment, wherein the etching texture identifier is based on the microstructure characteristics of the key node; A control block coupling module is used to add a first control block by introducing a curved surface point cloud projection, add a second control block by optimizing a multi-axis free linkage mode, couple the first control block and the second control block, and embed the first control block and the second control block in the control center; A laser etching strategy determination module is used to determine the base material and geometric characteristics of the etching base part, to constrain the geometric characteristics, trigger the first control block, project the etching texture from a two-dimensional plane to a three-dimensional curved surface to perform etching positioning, to constrain the base material and microstructure characteristics, and perform multi-axis free linkage under cross-scale integration by empty path cutting to determine the laser etching strategy; A laser etching control module is used to drive the laser etching equipment to perform automatic laser etching control according to the laser etching strategy.

10. An electronic device, comprising: The electronic device includes: A memory is used to store executable instructions; A processor is used to execute the executable instructions stored in the memory, and implement the laser etching control method of any one of claims 1-8.

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