Acoustic device with integrated circuit element and related manufacturing method

Abstract

An acoustic device includes a circuit element, such as an analog circuit component, between a first substrate and a second substrate and coupled to an acoustic resonator to form an acoustic filter within the acoustic device. In some examples, forming the circuit element between the first substrate and the second substrate includes forming a first circuit element in an insulating material on the second substrate prior to coupling the second substrate to a first side of the first substrate. The circuit element disposed between the first substrate and the second substrate may include a capacitor, an inductor, and an electrical interconnect coupled to the acoustic resonator on the first substrate. Additional features may be included in the insulating material. The acoustic device avoids the need for bulky analog components coupled to the acoustic resonator via long interconnects through the package substrate, so that the package size of the acoustic device can be reduced.

Description

Priority application

[0001] This application claims priority to U.S. Patent Application Serial No. 18 / 363,233, filed August 1, 2023, entitled “ACOUSTIC DEVICES WITH INTEGRATEDCIRCUIT ELEMENTS AND RELATED FABRICATION METHODS”, the entire contents of which are incorporated herein by reference. Technical Field

[0002] The technology disclosed herein relates generally to acoustic devices, and more specifically to improving the performance of such devices and reducing their size. Background Technology

[0003] There exists a limited set of frequency bands available for wireless communication. To share these bands among the many wireless devices that may be used within a broadcast area, each type of wireless communication is assigned a specific frequency band. To avoid mutual interference, each device needs to broadcast only within its assigned frequency. Therefore, wireless devices include filters to limit the frequency of the signals they transmit and receive. Acoustic filters are a widely used technique for performing this filtering in small packages. One type of acoustic filter is a surface acoustic wave (SAW) filter, which includes interdigitated electrodes on the surface of a piezoelectric material such as lithium niobate (LN) or lithium tantalate (LT). Acoustic filters can be tuned to operate within a certain frequency range by coupling acoustic resonators in a circuit to analog components such as capacitors and inductors. Acoustic filters and other components are typically mounted on a package substrate and coupled to each other via electrical interconnects extending through or on the package substrate. These long electrical paths through the package between the acoustic resonators and analog components can reduce the efficiency or quality (e.g., Q-factor) of the acoustic filter. The analog components can be made larger to compensate for the loss due to this inefficiency. In addition, larger components lead to an increase in the area of ​​the packaging substrate and the height of the package. Summary of the Invention

[0004] The aspects disclosed in the detailed description include acoustic devices having integrated circuit elements. Related methods for manufacturing acoustic devices having integrated circuit elements are also disclosed. An acoustic device includes an acoustic resonator having electrodes on the surface of a piezoelectric material on a first side of a first substrate and a second cover substrate, the second cover substrate also disposed on the first side of the first substrate. Exemplary acoustic devices include circuit elements, such as analog circuit components, coupled between the first and second substrates and to the acoustic resonator to form an acoustic filter within the acoustic device. In some examples, forming the circuit element between the first and second substrates includes forming the first circuit element in an insulating material on the second substrate before coupling the second substrate to the first side of the first substrate. The circuit element disposed between the first and second substrates may include, for example, a capacitor, an inductor, and an electrical interconnect coupled to the acoustic resonator on the first substrate. In other examples, additional features may be included in the insulating material. In this respect, the acoustic device avoids the need for a bulky analog component coupled to the acoustic resonator via a long interconnect through a package substrate, thereby enabling a reduction in the package size of the acoustic device.

[0005] In this regard, in one exemplary aspect, an apparatus is disclosed. The apparatus includes a first substrate including a first surface comprising a piezoelectric material; a first electrode disposed on the first surface; and a second substrate. The apparatus also includes a first via extending through the second substrate and coupled to the first electrode; and a first circuit element electrically coupled to the first via and disposed between the second substrate and the first surface of the first substrate.

[0006] In another exemplary aspect, a method of manufacturing an apparatus is disclosed. The method includes forming a first substrate including a first surface comprising a piezoelectric material; forming a first electrode on the first surface; and forming a second substrate. The method further includes forming a first via extending through the second substrate and coupled to the first electrode; and forming a first circuit element electrically coupled to the first via and between the second substrate and the first surface of the first substrate.

[0007] In another exemplary aspect, an acoustic filter package is disclosed. The acoustic filter package includes a package substrate and a device. The device includes a first substrate including a first surface comprising a piezoelectric material; a first electrode disposed on the first surface; and a second substrate. The device also includes a first via extending through the second substrate and coupled to the first electrode; a first circuit element electrically coupled to the first via and disposed between the second substrate and the first surface of the first substrate; and a contact coupling the first via to the package substrate. Attached Figure Description

[0008] Figure 1 This is a cross-sectional side view of a first example of an exemplary acoustic filter package, which includes an acoustic device on a package substrate, the acoustic device including a first acoustic resonator on a first substrate, the first acoustic resonator being coupled between a first substrate and a second substrate to circuit elements in an insulating material to form an acoustic filter. Figure 2A This is a cross-sectional side view of a conventional acoustic filter package, which includes an acoustic resonator device coupled to a large analog assembly on the package substrate to form an acoustic filter. Figure 2B yes Figure 2A A top-view cross-section of an acoustic filter package, illustrating multiple resonators in the same air cavity, which are coupled to a large analog assembly to form a single acoustic filter. Figure 3 This is a cross-sectional side view of a second example of an exemplary acoustic filter package, which includes an acoustic device on a package substrate, the acoustic device including, in addition to circuit elements, resonators in two air cavities for two different acoustic filters; Figure 4 This is a cross-sectional top view of an exemplary acoustic device, which includes a resonator in a separate air cavity and circuit elements providing multiple acoustic filters; Figure 5 This is a cross-sectional side view of another example of an acoustic device, which includes circuitry for an acoustic filter and external connections coupled to the acoustic filter through a cylindrical via having a non-conductive core through a cover substrate. Figure 6 It is manufacturing Figure 1 A flowchart of an exemplary method for an acoustic device; Figures 7A to 7H This is a cross-sectional side view of an exemplary acoustic device during the manufacturing stage, the acoustic device including resonators and circuit elements for acoustic filters; Figures 8A to 8H This is a flowchart of a method for manufacturing an acoustic device, which includes circuit elements such as acoustic resonators and acoustic filters. Figures 7A to 7H The manufacturing stages shown are illustrated. Figure 9 This is a block diagram of an exemplary wireless communication device, which includes an acoustic device comprising a first acoustic resonator on a first substrate. The first acoustic resonator is coupled between the first substrate and a second substrate to circuit elements in an insulating material to form an acoustic filter, such as... Figure 1 , Figures 3 to 5 and Figures 7A to 7H As shown and according to, but not limited to Figure 6 and Figures 8A to 8H Any of the exemplary manufacturing processes in the manufacture of such acoustic devices; and Figure 10 This is a block diagram of an exemplary processor-based system that may include acoustic devices, including a first acoustic resonator on a first substrate, the first acoustic resonator being coupled between the first substrate and a second substrate to circuit elements in an insulating material to form an acoustic filter, such as... Figure 1 , Figures 3 to 5 and Figures 7A to 7H As shown and according to, but not limited to Figure 6 and Figures 8A to 8H Any of the exemplary manufacturing processes in the manufacture of such acoustic devices. Detailed Implementation

[0009] Several exemplary aspects of this disclosure are described with reference to the accompanying drawings. The word "exemplary" is used herein to mean "serving as an example, instance, or illustration." Any aspect described herein as "exemplary" is not necessarily to be construed as preferred or advantageous over other aspects.

[0010] The aspects disclosed in the detailed description include acoustic devices having integrated circuit elements. Related methods for manufacturing acoustic devices having integrated circuit elements are also disclosed. An acoustic device includes an acoustic resonator having electrodes on the surface of a piezoelectric material on a first side of a first substrate and a second cover substrate, the second cover substrate also disposed on the first side of the first substrate. Exemplary acoustic devices include circuit elements, such as analog circuit components, coupled between the first and second substrates and to the acoustic resonator to form an acoustic filter within the acoustic device. In some examples, forming the circuit element between the first and second substrates includes forming the first circuit element in an insulating material on the second substrate before coupling the second substrate to the first side of the first substrate. The circuit element disposed between the first and second substrates may include, for example, a capacitor, an inductor, and an electrical interconnect coupled to the acoustic resonator on the first substrate. In other examples, additional features may be included in the insulating material. In this respect, the acoustic device avoids the need for a bulky analog component coupled to the acoustic resonator via a long interconnect through a package substrate, thereby enabling a reduction in the package size of the acoustic device.

[0011] Figure 1 This is a cross-sectional side view of an exemplary acoustic filter package 100, which includes an acoustic device 102 disposed on a package substrate 104. The acoustic device 102 includes an acoustic filter 106 formed between a first base substrate 108 and a second cover substrate 110. The acoustic filter 106 includes a first acoustic resonator 112 coupled to an (analog) circuit element 114, which includes capacitors 116A and 116B, inductors 118A and 118B, and interconnects 120A and 120B. Therefore, in addition to the first acoustic resonator 112, the circuit element 114 is also disposed between the base substrate 108 and the cover substrate 110.

[0012] In this example, the first acoustic resonator 112 is a surface acoustic wave (SAW) resonator formed on a first surface 122 of the substrate 108. The first acoustic resonator 112 includes a first electrode 124A and a second electrode 124B on the first surface 122, which may be interdigitated electrodes. Circuit elements 114, including capacitors 116A and 116B, inductors 118A and 118B, and interconnects 120A and 120B, are disposed within an insulating material 128 between the substrate 108 and the cover substrate 110.

[0013] The first surface 122 includes a piezoelectric material 126, such as lithium niobate (LN), lithium tantalate (LT), or any suitable piezoelectric material. The piezoelectric material 126 may be in a layer on a first side S1 of the substrate 108. In such an example, the substrate 108 includes another material on which the layer of piezoelectric material 126 is formed. In another example, the substrate 108 is a monolithic substrate of LN or LT, such that the first surface 122 of the piezoelectric material 126 is not merely a layer on a substrate of a second material. Forming the substrate 108 may include manufacturing or fabricating the substrate 108, or alternatively, providing a first substrate 108 including the piezoelectric material 126 for assembly.

[0014] An input signal SIG_IN with an oscillating voltage is applied between the first electrode 124A and the second electrode 124B, causing the piezoelectric material 126 to expand and contract to generate acoustic waves in the first surface 122. The acoustic waves have a resonant frequency as part of frequency filtering. An output signal SIG_OUT is generated from the acoustic waves on the piezoelectric material 126. The operation of the SAW resonator is well known to those skilled in the art and will not be described in further detail here.

[0015] To "tune" the output signal SIG_OUT to a desired frequency or frequency range, a first acoustic resonator 112 is coupled in a circuit including circuit elements 114, which include a capacitor 116A, an inductor 118A, and an interconnect 120A. In this example, interconnect 120A couples an acoustic filter 106 to a first vertical interconnect via 130A, which provides a connection to a package substrate 104. The package substrate 104 includes interconnects (not shown) to couple the acoustic device 102 to external circuitry (not shown). The acoustic device 102 also includes a second via 130B, which couples to a second electrode 124B and can be further coupled to the capacitor 116B and / or the inductor 118B via interconnect 120B. As explained in more detail below, circuit element 114 is formed in insulating material 128 during the manufacture of acoustic device 102. Air cavity 132 is formed in insulating material 128 between first electrode 124A and second electrode 124B and cover substrate 110. Therefore, insulating material 128 surrounds first acoustic resonator 112. Air cavity 132 is provided to allow sound waves in piezoelectric material 126 to propagate without external interference. Furthermore, as shown in this example, acoustic device 102 may include electromagnetic interference (EMI) shielding 134. EMI shielding 134 is disposed on cover substrate 110 on the side of air cavity 132 opposite to first electrode 124A and second electrode 124B. EMI shielding is coupled to terminals (not shown) of acoustic device 102, which are configured to be coupled to receive a reference voltage such as ground voltage (GND or V).SS The reference voltage rail of the first acoustic resonator 112 is referenced. The EMI shield 134 provides some protection for the first acoustic resonator 112 against external radiation that may cause noise or signal interference in the output signal SIG_OUT.

[0016] Figure 1 The diagram also shows bumps or solder balls 138A and 138B coupling vias 130A and 130B to package contacts 140A and 140B on package substrate 104. In the example shown here, the acoustic filter package 100 includes device contacts 142A and 142B on cover substrate 110 to couple solder balls 138A and 138B to vias 130A and 130B. Therefore, device contacts 142A and 142B are configured to couple a first electrode 124A and a second electrode 124B to external circuitry. Here, vias 130A and 130B are cylindrical or substantially cylindrical in shape and monolithically formed from a solid conductive metal. In some examples, solder balls 138A and 138B may be directly coupled to vias 130A and 130B without device contacts 142A and 142B. The acoustic filter package 100 can be used in wireless devices.

[0017] Figure 2A This is a cross-sectional side view of a conventional acoustic filter package 200, which includes an acoustic resonator device 202 coupled to analog circuit elements 204A and 204B on a package substrate 206 to form an acoustic filter 208. Although not shown, the package substrate 206 includes interconnects on its surface or in internal layers to couple the acoustic resonator device 202 to the analog circuit elements 204A and 204B. The analog circuit elements 204A and 204B may be capacitors or inductors.

[0018] Acoustic resonator device 202 includes a resonator 210 on a surface 212 of a piezoelectric material 214 on a substrate 216. The resonator 210 includes electrodes 218A and 218B on the surface 212 within a gas cavity 220 formed between the surface 212 and a cover substrate 222. In some examples, the cover substrate 222 may be a glass substrate. Acoustic resonator device 202 includes glass vias (TGVs) 224A and 224B extending through the cover substrate 222 and coupled to the electrodes 218A and 218B, respectively.

[0019] The acoustic filter 208 includes a resonator 210 coupled in the circuit to analog circuit elements 204A and 204B. In this respect, the package substrate 206 is made larger to allow space for analog circuit elements 204A and 204B in addition to the resonator 210. Because Figure 1The circuit elements 114 in the acoustic filter package 100 are formed inside the acoustic device 102 between the first substrate 108 and the cover substrate 110, so the acoustic filter package 100 does not need to include bulky analog components. Therefore, Figure 1 The area of ​​the packaging substrate 104 in Figure 2 can be smaller than the area of ​​the packaging substrate 206 in Figure 2.

[0020] Acoustic filter 208 includes an electrical path P1 that passes through TGV 224A between electrode 218A and package substrate 206 and through interconnects in / on package substrate 206 between acoustic resonator device 202 and analog circuit element 204A. Similarly, electrical path P2 of acoustic filter 208 extends from between electrodes 218B through TGV 224B to package substrate 206 and through interconnects in / on package substrate 206 to analog circuit element 204B. Electrical paths P1 and P2 are more... Figure 1 The distance within the acoustic filter 106 is much longer. Therefore, even though paths P1 and P2 extend through large copper interconnects designed to have minimal resistance, the length of paths P1 and P2 still introduces losses, reduces efficiency, and results in a low Q factor in the acoustic filter package 200. Furthermore, due to these losses, larger capacitors and / or inductors are required, necessitating a package with dimensions larger than […]. Figure 1 The analog circuit elements 204A and 204B of the circuit element 114 in the instrument. In some examples, the analog circuit elements 204A and 204B may be higher than the acoustic resonator device 202 (e.g., in the Z-axis direction).

[0021] Figure 2B yes Figure 2A A top cross-sectional view of the acoustic filter package 200. This view shows the interior of analog circuit elements 204A and 204B and the air cavity 220 in the acoustic resonator device 202. In this example, besides Figure 2A In addition to electrodes 218A and 218B, the air cavity 220 of the resonator 210 also contains resonators 226A and 226B. However, since resonators 210, 226A, and 226B are all housed in the same air cavity 220 and coupled to analog circuit elements 204A and 204B, they are all part of the same acoustic filter 208. If housed in the same air cavity, resonators with different resonant frequencies or frequency ranges for different filters would interfere with each other. Therefore, since the acoustic resonator device 202 is confined to a single air cavity 220, the acoustic resonator device 202 can provide resonators 210, 226A, and 226B for only one acoustic filter 208.

[0022] Figure 3This is a cross-sectional side view of an exemplary acoustic filter package 300, which includes an acoustic device 302 on a package substrate 304, and the acoustic device 302 includes a circuit element 306 and resonators 308A and 308B in corresponding air cavities 310A and 310B to form two acoustic filters 312A and 312B.

[0023] Acoustic filter package 300 corresponds in many respects to Figure 1 The acoustic filter package 100 in the middle has the above-described features relative to the acoustic filter package 100 in the middle. Figure 1 All the beneficial features described, such as the circuit element 306 between the first base substrate 314 and the second cover substrate 316, avoid the need for externally coupled analog circuit elements that increase package size and reduce circuit efficiency. However, in another exemplary aspect, the acoustic filter package 300 includes two separate air cavities 310A and 310B, each air cavity including one of resonators 308A and 308B. In this respect, with Figure 2A and Figure 2B Unlike conventional acoustic resonator devices 202, which are limited to a single air cavity 228 housing one or more of the resonators 210, 226A, and 226B of a single acoustic filter 208, acoustic device 302 has resonators 308A and 308B disposed in separate air cavities 310A and 310B, and can resonate at different (e.g., first and second) resonant frequencies. In this respect, acoustic device 302 may include two separate acoustic filters 312A and 312B involving different frequency ranges. Acoustic filters 312A and 312B may involve different frequencies or frequency ranges and can work together to provide more frequency options and / or better frequency control than conventional acoustic resonator devices 202 with a single air cavity 228.

[0024] Acoustic device 302 includes a via 318A coupled to a first electrode 320A of resonator 308A and a via 318B coupled to a second electrode 320B of resonator 308B. Resonator 308A also includes a third electrode (not shown) in air cavity 310A, and resonator 308B includes a fourth electrode (not shown) in air cavity 310B. Vias 318A and 318B are also coupled to circuit element 306, which includes capacitors 322A and 322B, inductors 324A and 324B, and interconnects 326A and 326B. Vias 318A and 318B extend through insulating material 328 and through cover substrate 316 to couple to package substrate 304. Similarly, acoustic device 302 includes a via 318C coupled to node 330, which may further couple one or both of resonators 308A and 308B. Via 318C is disposed within wall 332 formed of insulating material 328. Wall 332 provides separation between air cavities 310A and 310B. Via 318C extends from node 330 through wall 332 and through cover substrate 316 to couple to package substrate 304.

[0025] In the acoustic filter package 300, vias 318A-318C can be cylindrical or substantially cylindrical monolithic metal vias, where monolithic means that the same conductive metal or other conductive material extends from the outer surface 334 through the cross section of vias 318A-318C to the core region 336.

[0026] The air chambers 310A and 310B also include EMI shielding elements 338A and 338B to provide protection against noise interference to the acoustic filters 312A and 312B.

[0027] Figure 4 This is a cross-sectional top view of an exemplary acoustic device 400, which includes resonators 402A-402C in separate air cavities 404A-404C for a plurality of acoustic filters 406A-406C. Air cavity 404A includes electrodes 408A and 410A, which are coupled to terminals 412 and 414, respectively, via interconnects 416A and 418A. Interconnects 416A and 418A also couple electrodes 408A and 410A to, for example, capacitor 420A and inductor 422A. Capacitor 420A and inductor 422A are coupled to resonator 402A to control frequencies filtered by acoustic filter 406A, as known in the art. The acoustic device 400 includes circuit elements such as interconnects 416A, 418A, capacitors 420A and inductors 422A. This reduces the overall size of the acoustic filter package by reducing the number of devices disposed on the packaging substrate (not shown), and also improves the quality factor of the acoustic filter 406A.

[0028] Similar to air cavity 404A, air cavities 404B and 404C respectively surround corresponding electrodes 408B, 410B and 408C, 410C. Acoustic filters 406B and 406C respectively include interconnects 416B, 418B and 416C, 418C to couple resonators 402B, 402C to capacitors 420B, 420C and inductors 422C, 422C. Figure 4 In this configuration, each of the acoustic filters 406A-406C is coupled to terminals 412 and 414. Therefore, the acoustic filters 406A-406C can have different resonant frequencies to provide individual filtering control of the signal.

[0029] In some examples not shown, acoustic filters 406A-406C may be uncoupled (e.g., coupled to terminals 412 and 414) to cooperatively filter the same signal. Conversely, in some examples, additional terminals (not shown) may be present to provide separate signals to be filtered by acoustic filters 406A-406C. It should be understood that the acoustic filter devices disclosed herein are not limited to the examples shown. That is, the number of air cavities, their shapes, relative dimensions, and spatial arrangement illustrated herein are merely examples. The methods for manufacturing the acoustic filter devices disclosed herein enable alternative and / or additional air cavities, resonators, and corresponding filter circuit elements, as referenced below. Figure 6 and Figures 8A to 8H A more detailed description.

[0030] Figure 5 This is a cross-sectional side view of another example of acoustic device 500. Acoustic device 500 corresponds in all aspects to... Figure 3 The acoustic device 302 in the description, except as described below, is therefore not provided separately here. Figure 5 The characteristics and markings are described. As noted above, the vias 318A-318C of acoustic device 302 are monolithic. In contrast, as another example, acoustic device 500 includes vias 502A-502C that are not monolithic. Instead, vias 502A-502C may also be cylindrical or substantially cylindrical, but have a cylindrical layer of conductive metal 504 or other conductive material at the outer surface 506, while the core region 508 includes a non-conductive filler material 510. The filler material 510 may be a dry film material, which may be an epoxy-based photoresist, such as a photosensitive permanent film. Contacts 512A-512C are coupled to vias 502A-502C respectively to provide contact points for bumps or solder balls 514A-514C, for example, which may be used to couple acoustic device 500 to a package substrate (not shown).

[0031] With reference to the description of exemplary manufacturing methods of the acoustic filter device provided below, vias such as vias 502A-502C and other exemplary and beneficial aspects of the acoustic filter device disclosed herein are described in more detail.

[0032] It should be understood that acoustic devices 102, 302, 400 and 500, which have corresponding resonators and circuit elements (such as analog circuit elements), can internally include all the components of an acoustic filter, and therefore can also be referred to as acoustic filter devices.

[0033] Figure 6 It is manufacturing Figure 1 and Figures 3 to 5 A flowchart illustrating an exemplary method 600 of an acoustic filter device is shown below. Method 600 includes forming a first substrate 108, the first substrate including a first surface 122 including a piezoelectric material 126 (box 602). As used herein, "forming a first substrate" is not limited to manufacturing or fabricating the first substrate, and may additionally or alternatively include providing the first substrate for assembly. Method 600 also includes forming a first electrode 124A on the first surface 122 (box 604). The method also includes forming a second substrate 110 (box 606) and forming an insulating material 128 between the second substrate 110 and the first surface 122 of the first substrate 108 (box 608). Method 600 further includes forming a first via 130A that extends through the second substrate 110 and the insulating material 128 and is coupled to a first electrode 124A (box 610); and forming a first circuit element 114 that is electrically coupled to the first via 130A and between the second substrate 110 and a first surface 122 of the first substrate 108 (box 612).

[0034] Figures 7A to 7H This is a cross-sectional side view of an exemplary acoustic device 700, which includes resonators 702A, 702B and circuit elements 704A, 704B for acoustic filters 706A, 706B during manufacturing stages 700A-700H. Figures 8A to 8H The corresponding boxes 802-816 in the flowchart describe the method of manufacturing the acoustic device 700. Figures 7A to 7H Manufacturing stages 700A-700H are described, for example, in the corresponding flowchart block 802. Figure 7A The example shown is manufacturing stage 700A.

[0035] Figure 7A It shows the relationship with Figure 1The cover substrate 708 corresponds to the cover substrate 110 in the SAW filter. The cover substrate 708 may also be referred to as a hybrid integrated passive (HIP) substrate because the material of the cover substrate 708 used in the SAW filter offers several benefits. Firstly, it includes the formation of circuit elements 704A, 704B (e.g., passive circuit elements) on the cover substrate. Secondly, the cover substrate 708 comprises a high thermal conductivity material, such as alumina, high resistivity silicon (HRS), porous silicon (pSi), etc., having a thermal conductivity exceeding thirty (20) watts / meter Kelvin (W / (m⋅K)), and in some cases exceeding thirty (30) watts / meter Kelvin (W / (m⋅K)). The thickness of the cover substrate 708 can range from sixty (60) micrometers to one hundred and twenty-five (125) micrometers. The higher thermal conductivity improves the dissipation of heat generated by acoustic activities in the SAW filter through the thickness of the cover substrate 708. For example, improved thermal conductivity makes SAW filters more suitable for operation in high-power transmission circuits or devices. In some examples, the thermal conductivity of the cover substrate 708 can exceed ten (10) watts per meter Kelvin (W / (m⋅K)). In some examples, the thermal conductivity of the cover substrate 708 can be at least twenty (20) watts per meter Kelvin (W / (m⋅K)). In a third aspect, the cover substrate 708 can be thinned to a greater extent than other previously used cover substrates (such as glass), which allows for a reduction in the height of the acoustic device 700 compared to conventional acoustic resonator devices.

[0036] Frame 802 includes a first metal layer 710, a dielectric layer 712, and a second metal layer 714 formed on a cover substrate 708, such as Figure 7AAs shown. A first metal layer 710 is formed on a cover substrate 708. In this example, a dielectric layer 712 is formed on a portion of the first metal layer 710, and a second metal layer 714 is formed on the dielectric layer 712. Photolithography can be used in this regard. The first metal layer 710 and the second metal layer 714 can be copper (Cu) or another highly conductive metal. The first metal layer 710, the dielectric layer 712, and the second metal layer 714 together form capacitors 716A and 716B. The first electrodes 718A and 718B of capacitors 716A and 716B are formed in the first metal layer 710. In this example, EMI shields 720A and 720B are also formed in the first metal layer 710. EMI shields 720A and 720B correspond to the respective air cavities for resonators 702A and 702B shown below. The second metal layer 714 provides second electrodes 722A and 722B, which are separated from the first electrodes 718A and 718B of capacitors 716A and 716B by the dielectric layer 712. In this respect, capacitors 716A and 716B can be metal-insulator-metal (MIM) capacitors. Therefore, forming the first metal layer 710, the second metal layer 714, and the dielectric layer 712 may also include forming EMI shielding elements 720A and 720B, and capacitors 716A and 716B, on the cover substrate 708.

[0037] An example is an acoustic device 700 in the manufacturing stage 700B. Figure 7B Additional features formed on the cover substrate 708 are shown, as described in corresponding block 804 of reference method 800. Block 804 includes a first layer 724 forming an insulating material 726, and circuit elements 704A, 704B formed on the first layer 724. Circuit elements 704A, 704B are formed of metal and may include inductors 728A and 728B. Inductors 728A and 728B may be formed as two-dimensional (2D) inductors (e.g., planar spiral patterns). The insulating material 726 may be a polymer, such as polyimide.

[0038] Frame 804 also includes a second layer 730 forming an insulating material 726 and a cavity 732A formed in the insulating material 726. Frame 804 may optionally include a cavity 732B forming a cavity 732B and a wall 733 separating cavities 732A and 732B. Forming cavities 732A and 732B includes patterning the second layer 730 to form the wall 733. The first layer 724 is further patterned to form vertical interconnects 734A, 734B, and the first layer 724 and the second layer 730 may also be patterned to couple capacitors 716A, 716B and inductors 728A and 728B to electrodes in resonators 702A and 702B (see [link to relevant documentation]). Figure 7E ).

[0039] Figure 7CAn example of manufacturing stage 700C is illustrated, which includes further features formed on the cover substrate 708 in the metal layer 736, as described in block 806C of reference method 800. Block 806 includes interconnects 738A-738C formed to the second metal layer 714, and may also include vertical interconnects 740A and 740B formed to inductors 728A and 728B. The third metal layer 736 includes interconnects 738A-738C and may be disposed parallel to the cover substrate 708. Interconnects 738A and 738B may be electrically coupled to... Figure 7E The resonators 702A and 702B are used in this example.

[0040] Figure 7D The manufacturing stage 700D corresponding to frame 808 in method 800 is illustrated. Frame 808 includes a third layer 742 on which an insulating material 726 is formed on a metal layer 736. The third layer 742 is formed on interconnects 738A-738C and a second layer 730, the second layer including a wall 733 and a region outside air cavities 732A, 732B.

[0041] Figure 7E An illustration shows a fabrication stage 700E corresponding to frame 810 in method 800. Frame 810 includes electrodes 744A, 744B formed on a first surface 748 of a substrate 750. In some examples, frame 810 includes a node 746 formed opposite to wall 733, which may be coupled to one or both of resonators 702A, 702B. A passivation layer 752 may also be formed on the substrate 750. The passivation layer 752 may be, for example, silicon nitride (SiN). Figure 7E As shown, the cover substrate 708 is disposed opposite to the first surface 748 of the base substrate 750. Specifically, as Figure 7F As shown, before coupling the base substrate 750 and the cover substrate 708, the gas cavities 732A and 732B are aligned with the electrodes 744A and 744B.

[0042] Figure 7F An example of an acoustic device 700 in the manufacturing stage 700F is illustrated, corresponding to block 812 in method 800. Block 812 includes coupling a cover substrate 708 to a base substrate 750, which includes disposing an insulating material 726 of the cover substrate 708 on a first surface 748 of the base substrate 750. In this respect, a third layer 742 of the insulating material 726 may be in contact with the passivation layer 752 and portions of the electrodes 744A, 744B. Thus, the third layer 742 of the insulating material 726 is between the circuit elements 704A, 704B and the first surface 748, and air cavities 732A and 732B surround the resonators 702A and 702B.

[0043] Circuit element 704A includes capacitor 716A, inductor 728A, vertical interconnect 734A, and interconnect 738A. Circuit element 704B includes capacitor 716B, inductor 728B, vertical interconnect 734B, and interconnect 738B, and also includes interconnect 738C. In addition to other circuit features that may be formed in insulating material 726, circuit elements 704A and 704B may also include additional capacitors, inductors, and interconnects not shown herein.

[0044] Figure 7G This is an illustration of manufacturing stage 700G corresponding to block 814 of method 800. Block 814 includes forming through-substrate vias (TSuV) voids (“voids”) 754A-754C through the cover substrate 708 and the insulating material 726 (and passivation layer 752). Voids 754A, 754B extend to electrodes 744A and 744B. In this example, TSuV void 754C extends to node 746. The void can be cylindrical or substantially cylindrical.

[0045] Figure 7H This is an illustration of manufacturing stage 700H corresponding to block 816 of method 800. Block 816 includes forming vias 756A-756C in voids 754A-754C. Vias 756A-756C are electrically coupled to interconnects 738A-738C, respectively, thereby providing electrical paths to acoustic resonators 702A, 702B and circuit elements 704A, 704B. Forming vias 756A-756C may include depositing metal 758, which may include vapor deposition or another suitable process, such that the metal 758 first adheres to the sides 760A-760C of voids 754A-754C.

[0046] In corresponding Figure 1 and Figure 3 In this example, the deposition process continues until the voids are filled into its core 762A-762C as a monolithic via of metal 758. In another example, the formation... Figure 5 The vias 502A-502C may include the deposition of metal 758 as described above, but for a short period of time, thereby creating a layer of metal 758 on the sides 760A-760C of the vias 756A-756C, but the cores 762A-762C are hollow. Such hollow cylindrical vias provide a sufficiently low-resistance electrical path to external circuitry. Therefore, to save time and metal 758, the cores 762A-762C may be filled with a non-conductive material, such as the dry film described above.

[0047] Electronic devices including acoustic devices can be provided in or integrated into any processor-based device, the acoustic device including a first acoustic resonator on a first substrate, the first acoustic resonator being coupled between the first substrate and a second substrate to circuit elements in an insulating material to form an acoustic filter, such as... Figure 1 , Figures 3 to 5 and Figures 7A to 7H As shown and according to, but not limited to Figure 6 and Figures 8A to 8H This includes any of the exemplary manufacturing processes used in the manufacture of such acoustic devices and any aspects disclosed herein. Examples, not limited to, include: set-top boxes, entertainment units, navigation devices, communication devices, fixed location data units, mobile location data units, Global Positioning System (GPS) devices, mobile phones, cellular phones, smartphones, Session Initiation Protocol (SIP) phones, tablet computers, phablets, servers, computers, portable computers, mobile computing devices, laptop computers, wearable computing devices (e.g., smartwatches, health or fitness trackers, glasses, etc.), desktop computers, personal digital assistants (PDAs), monitors, computer monitors, televisions, tuners, radios, satellite radios, music players, digital music players, portable music players, digital video players, video players, digital video disc (DVD) players, portable digital video players, automobiles, vehicle components, avionics systems, drones, and multirotor aircraft.

[0048] in this regard, Figure 9 A block diagram illustrating an exemplary wireless communication device 900 including radio frequency (RF) components formed by one or more ICs 902 is shown, wherein any of the ICs 902 may include an acoustic filter including electrodes disposed on a piezoelectric layer on a first side of a first substrate and vias extending through the substrate to couple the electrodes to a second side of the substrate, such as... Figure 1 and Figure 4 The examples in F and, according to, but not limited to, those shown in F, are as follows: Figure 3 and Figure 5 A to Figure 5 Any of the exemplary manufacturing processes in F for manufacturing such an acoustic filter and according to any aspect disclosed herein. As an example, wireless communication device 900 may include or be provided in any of the devices described above. Figure 9As shown, the wireless communication device 900 includes a transceiver 904 and a data processor 906. The data processor 906 may include memory for storing data and program code. The transceiver 904 includes a transmitter 908 and a receiver 910 supporting bidirectional communication. Generally, the wireless communication device 900 may include any number of transmitters 908 and / or receivers 910 for any number of communication systems and frequency bands. All or part of the transceiver 904 may be implemented on one or more analog ICs, RF ICs (RFICs), mixed-signal ICs, etc.

[0049] The transmitter 908 or receiver 910 can be implemented using a superheterodyne or direct conversion architecture. In a superheterodyne architecture, the signal undergoes multi-stage frequency conversion between RF and baseband, for example, from RF to intermediate frequency (IF) in one stage, and then from IF to baseband in another stage. In a direct conversion architecture, the signal is converted between RF and baseband in a single stage. Superheterodyne and direct conversion architectures can use different circuit blocks and / or have different requirements. Figure 9 In the wireless communication device 900, the transmitter 908 and receiver 910 are implemented using a direct frequency conversion architecture.

[0050] In the transmission path, data processor 906 processes the data to be transmitted and provides I and Q analog output signals to transmitter 908. In the exemplary wireless communication device 900, data processor 906 includes digital-to-analog converters (DACs) 912(1), 912(2) to convert digital signals generated by data processor 906 into I and Q analog output signals (e.g., I and Q output currents) for further processing.

[0051] Within transmitter 908, low-pass filters 914(1) and 914(2) filter the I and Q analog output signals, respectively, to remove unwanted signals caused by the previous digital-to-analog conversion. Amplifiers (AMPs) 916(1) and 916(2) amplify the signals from low-pass filters 914(1) and 914(2), respectively, and provide I and Q baseband signals. Upconverter 918 upconverts the I and Q baseband signals using mixers 920(1) and 920(2) from the transmit (TX) local oscillator (LO) signal generator 922 to provide upconverted signal 924. Filter 926 filters the upconverted signal 924 to remove unwanted signals caused by upconversion and noise in the receive band. Power amplifier (PA) 928 amplifies the upconverted signal 924 from filter 926 to obtain the desired output power level and provide the transmit RF signal. The RF signal is routed through the duplexer or switch 930 and transmitted via the antenna 932.

[0052] In the receiving path, antenna 932 receives the signal transmitted by the base station and provides the received RF signal, which is routed through duplexer or switch 930 and provided to low-noise amplifier (LNA) 934. Duplexer or switch 930 is designed to operate using a specific receive (RX) to TX duplexer frequency separation, such that the RX signal is isolated from the TX signal. The received RF signal is amplified by LNA 934 and filtered by filter 936 to obtain the desired RF input signal. Downconversion mixers 938(1) and 938(2) mix the output of filter 936 with the I and Q RX LO signals (i.e., LO_I and LO_Q) from RX LO signal generator 940 to generate I and Q baseband signals. The I and Q baseband signals are amplified by AMPs 942(1) and 942(2) and further filtered by low-pass filters 944(1) and 944(2) to obtain I and Q analog input signals, which are provided to data processor 906. In this example, data processor 906 includes analog-to-digital converters (ADCs) 946(1) and 946(2) to convert the analog input signals into digital signals to be further processed by data processor 906.

[0053] exist Figure 9 In the wireless communication device 900, a TX LO signal generator 922 generates I and Q TX LO signals for up-conversion, while an RX LO signal generator 940 generates I and Q RX LO signals for down-conversion. Each LO signal is a periodic signal with a specific base frequency. A TX phase-locked loop (PLL) circuit 948 receives timing information from a data processor 906 and generates control signals for adjusting the frequency and / or phase of the TX LO signals from the TX LO signal generator 922. Similarly, an RXILL circuit 950 receives timing information from a data processor 906 and generates control signals for adjusting the frequency and / or phase of the RX LO signals from the RX LO signal generator 940.

[0054] Figure 10 A block diagram illustrating an example of a processor-based system 1000 employing an integrated circuit includes an acoustic filter comprising electrodes disposed on a piezoelectric layer on a first side of a first substrate and vias extending through the substrate to couple the electrodes to a second side of the substrate, such as... Figure 1 and Figure 4 The examples in F and, according to, but not limited to, those shown in F, are as follows: Figure 3 and Figure 5 A to Figure 5Any of the exemplary manufacturing processes in F for manufacturing such an acoustic filter. In this example, the processor-based system 1000 includes one or more central processing units (CPUs) 1002, which may also be referred to as CPUs or processor cores, each CPU or processor core including one or more processors 1004. The CPU 1002 may have a cache memory 1006 coupled to the processor 1004 for fast access to temporarily stored data. The CPU 1002 is coupled to a system bus 1008 and may interactively couple to master and slave devices included in the processor-based system 1000. As is well known, the CPU 1002 communicates with these other devices by exchanging address, control, and data information on the system bus 1008. For example, the CPU 1002 may communicate a bus transaction request to a memory controller 1010, which is an example of a slave device. Although in Figure 10 Not illustrated, but multiple system buses 1008 may be provided, each of which constitutes a different structure.

[0055] Other master and slave devices can be connected to system bus 1008. For example... Figure 10 As illustrated, these devices may include a memory system 1012 (which includes a memory controller 1010 and one or more memory arrays 1014), one or more input devices 1016, one or more output devices 1018, one or more network interface devices 1020, and one or more display controllers 1022. Input devices 1016 may include any type of input device, including but not limited to input keys, switches, voice processors, etc. Output devices 1018 may include any type of output device, including but not limited to audio, video, other visual indicators, etc. Network interface devices 1020 may be any device configured to allow data exchange to and from network 1024. Network 1024 may be any type of network, including but not limited to wired or wireless networks, private or public networks, local area networks (LANs), wireless local area networks (WLANs), wide area networks (WANs), and Bluetooth. ™ Networks and the Internet. The network interface device 1020 can be configured to support any type of communication protocol desired.

[0056] CPU 1002 can also be configured to access display controller 1022 via system bus 1008 to control information transmitted to one or more displays 1026. Display controller 1022 transmits information to be displayed to displays 1026 via one or more video processors 1028, which process the information to be displayed into a format suitable for displays 1026. Displays 1026 may include any type of display, including but not limited to cathode ray tube (CRT), liquid crystal display (LCD), plasma display, or light-emitting diode (LED) displays.

[0057] Those skilled in the art will further understand that the various exemplary logic blocks, modules, circuits, and algorithms described in connection with the aspects disclosed herein can be implemented as electronic hardware, instructions stored in memory, or in another computer-readable medium, wherein any such instructions are executed by a processor or other processing device or a combination of both. As an example, the devices and components described herein can be used in any circuit, hardware component, integrated circuit (IC), or IC chip. The memory disclosed herein can be of any type and size and can be configured to store any desired information. To clearly illustrate this interchangeability, the functionality of the various exemplary components, blocks, modules, circuits, and steps has been generally described above. How such functionality is implemented depends on the specific application, design choices, and / or design constraints imposed on the overall system. Those skilled in the art can implement the described functionality in different ways for each specific application, but such specific implementation decisions should not be construed as departing from the scope of this disclosure.

[0058] The various exemplary logic blocks, modules, and circuits described in conjunction with the aspects disclosed herein may be implemented or executed using a processor, digital signal processor (DSP), application-specific integrated circuit (ASIC), field-programmable gate array (FPGA) or other programmable logic device, discrete gate or transistor logic unit, discrete hardware component, or any combination thereof, designed to perform the functions described herein. The processor may be a microprocessor, but in alternative embodiments, it may be any conventional processor, controller, microcontroller, or state machine. The processor may also be implemented as a combination of computing devices (e.g., a combination of a DSP and a microprocessor, multiple microprocessors, one or more microprocessors cooperating with a DSP core, or any other such configuration).

[0059] The aspects disclosed herein can be embodied in hardware and instructions stored in the hardware, and can reside in, for example, random access memory (RAM), flash memory, read-only memory (ROM), electrically programmable ROM (EPROM), electrically erasable programmable ROM (EEPROM), registers, hard disks, removable disks, CD-ROMs, or any other form of computer-readable medium known in the art. An exemplary storage medium is coupled to a processor such that the processor can read information from and write information to the storage medium. Alternatively, the storage medium may be integral with the processor. The processor and storage medium may reside in an ASIC. The ASIC may reside in a remote station. Alternatively, the processor and storage medium may reside as discrete components in a remote station, base station, or server.

[0060] It should also be noted that the operational steps described in any of the exemplary aspects of this document are described for the purpose of providing examples and discussion. The described operations may be performed in many different orders other than the order illustrated. Furthermore, the operations described in a single operational step may actually be performed in multiple different steps. Additionally, one or more operational steps discussed in the exemplary aspects may be combined. It will be understood that, as will be apparent to those skilled in the art, many different modifications may be made to the operational steps illustrated in the flowcharts. Those skilled in the art will also understand that various techniques and methods can be used to represent information and signals. For example, data, instructions, commands, information, signals, bits, symbols, and chips that may be mentioned throughout the above description may be represented by voltage, current, electromagnetic waves, magnetic fields or magnetic particles, light fields or optical particles, or any combination thereof.

[0061] The prior description of this disclosure is provided to enable any person skilled in the art to make or use this disclosure. Various modifications to this disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of this disclosure. Therefore, this disclosure is not intended to be limited to the examples and designs described herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

[0062] Specific implementation examples are described in the following numbered clauses: 1. An apparatus, said apparatus comprising: A first substrate, the first substrate including a first surface, the first surface including a piezoelectric material; A first electrode is disposed on the first surface; Second substrate; A first via, the first via extending through the second substrate and coupled to the first electrode; and A first circuit element is electrically coupled to the first via and disposed between the second substrate and the first surface of the first substrate.

[0063] 2. The device according to Clause 1, wherein the first circuit element includes a capacitor.

[0064] 3. The device according to Clause 1 or Clause 2, wherein the first circuit element includes an inductor.

[0065] 4. The device according to any one of Clauses 1 to 3, wherein the first circuit element comprises an interconnect extending parallel to the first surface.

[0066] 5. The device according to any one of Clauses 1 to 4, the device further comprising an insulating material disposed between the second substrate and the first surface of the first substrate, wherein the insulating material is disposed between the first circuit element and the first surface.

[0067] 6. The device according to Clause 5, wherein the insulating material is further disposed between the first circuit element and the second substrate of the first surface.

[0068] 7. The device according to any one of Clauses 1 to 6, the device further comprising a first gas cavity between the first electrode and the second substrate.

[0069] 8. The device according to any one of Clauses 1 to 7, wherein the first electrode is disposed in the first air cavity surrounded by the insulating material.

[0070] 9. The device according to Clause 5 or Clause 6, wherein the insulating material comprises a polymer.

[0071] 10. The device according to any one of Clauses 7 to 9, the device further comprising a metal layer between the first gas cavity and the second substrate.

[0072] 11. The device according to Clause 10, wherein the metal layer is coupled to a terminal configured to be coupled to a reference voltage.

[0073] 12. The device according to any one of Clauses 7 to 11, wherein the device further comprises: A second electrode, wherein the second electrode is disposed on the first surface; and The second gas cavity is separated from the first gas cavity between the second electrode and the second substrate.

[0074] 13. The device according to any one of Clauses 7 to 12, wherein the device further comprises: A third electrode, wherein the third electrode is located in the first gas cavity; and The fourth electrode is located in the second gas chamber. in: The first electrode and the third electrode each include a first resonator having a first resonant frequency; and The second electrode and the fourth electrode include a second resonator having a second resonant frequency.

[0075] 14. The device according to Clause 12 or Clause 13, the device further comprising at least a third air chamber.

[0076] 15. The device according to any one of Clauses 12 to 14, wherein the device further comprises: The wall, comprising the insulating material disposed between the first air cavity and the second air cavity; and The second via passes through the second substrate and through the wall and is coupled to the second electrode.

[0077] 16. The device according to any one of Clauses 1 to 15, wherein the second substrate comprises a material with a thermal conductivity greater than twenty (20) watts / meter Kelvin (W / (m⋅K)).

[0078] 17. The device according to any one of Clauses 1 to 16, wherein the second substrate comprises a material with a thermal conductivity greater than thirty (30) watts / meter Kelvin (W / (m⋅K)).

[0079] 18. The device according to any one of Clauses 1 to 17, wherein the thickness of the second substrate is in the range of sixty (60) micrometers to one hundred and twenty-five (125) micrometers.

[0080] 19. The device according to any one of Clauses 1 to 18, wherein the first via comprises a monolithic metal via.

[0081] 20. The device according to any one of Clauses 1 to 18, wherein the first via comprises a cylindrical layer and a core, the cylindrical layer comprising a first metal and the core comprising a second material.

[0082] 21. The device according to any one of Clauses 1 to 20, the device further comprising a contact on the second substrate, the contact being coupled to the first via and configured to couple the first electrode to an external circuit.

[0083] 22. The apparatus according to any one of Clauses 1 to 21, wherein the second substrate comprises one of high resistivity silicon (HRS), porous silicon (pSi), and alumina.

[0084] 23. The device according to any one of Clauses 1 to 22, the device further comprising a filter including a surface acoustic wave (SAW) resonator including a first electrode coupled to the first circuit element, wherein the first circuit element includes at least one of a metal-insulator-metal (MIM) capacitor and an inductor.

[0085] 24. The device according to any one of Clauses 1 to 23, wherein the device is integrated into a device selected from the group consisting of: set-top boxes; entertainment units; navigation devices; communication devices; fixed location data units; mobile location data units; global positioning system (GPS) devices; mobile phones; cellular phones; smartphones; session initiation protocol (SIP) phones; tablet computers; tablet phones; servers; computers; portable computers; mobile computing devices; wearable computing devices; desktop computers; personal digital assistants (PDAs); monitors; computer monitors; televisions; tuners; radios; satellite radios; music players; digital music players; portable music players; digital video players; video players; digital video disc (DVD) players; portable digital video players; automobiles; vehicle components; avionics systems; unmanned aerial vehicles; and multirotor aircraft.

[0086] 25. A method of manufacturing equipment, the method comprising: A first substrate is formed, the first substrate including a first surface, the first surface including a piezoelectric material; A first electrode is formed on the first surface; Forming a second substrate; A first via is formed, the first via extending through the second substrate and coupled to the first electrode; and A first circuit element is formed, the first circuit element being electrically coupled to the first via and between the second substrate and the first surface of the first substrate.

[0087] 26. The method according to clause 25, the method further comprising forming an insulating material between the second substrate and the first surface of the first substrate, wherein: Forming the first circuit element further includes forming the first circuit element on the second substrate; and Forming the insulating material also includes forming the insulating material on the first circuit element.

[0088] 27. The method according to clause 26, wherein forming the insulating material and the first circuit element further comprises: A first portion of the insulating material is formed on the second substrate; The first circuit element is formed on the first portion of the insulating material; and A second portion of the insulating material is formed on the first circuit element.

[0089] 28. The method described pursuant to Clause 25 or Clause 26, further comprising: A second substrate comprising the insulating material and the first circuit element is disposed on a first substrate including the first electrode. The formation of the first via also includes: Forming a void that penetrates the second substrate and the insulating material to reach the first electrode; and Metal is formed in the void.

[0090] 29. An acoustic filter package, the acoustic filter package comprising: Packaging substrate; and The device includes: A first substrate, the first substrate including a first surface, the first surface including a piezoelectric material; A first electrode is disposed on the first surface; Second substrate; A first via extends through the second substrate and is coupled to the first electrode; A first circuit element, electrically coupled to the first via and disposed between the second substrate and the first surface of the first substrate; and A contact element that couples the first via to the packaging substrate.

[0091] 30. The acoustic filter package according to Clause 29, wherein the first circuit element comprises one of a capacitor and an inductor.

Claims

1. An apparatus, comprising: a first substrate comprising a first surface comprising a piezoelectric material; a first electrode disposed on the first surface; a second substrate; a first via extending through the second substrate and coupled to the first electrode; and a first circuit element electrically coupled to the first via and disposed between the second substrate and the first surface of the first substrate.

2. The apparatus of claim 1, wherein the first circuit element comprises a capacitor.

3. The apparatus of claim 1, wherein the first circuit element comprises an inductor.

4. The apparatus of claim 1, wherein the first circuit element comprises an interconnect extending parallel to the first surface.

5. The apparatus of claim 1, further comprising an insulating material disposed between the second substrate and the first surface of the first substrate, wherein the insulating material is disposed between the first circuit element and the first surface.

6. The apparatus of claim 5, wherein the insulating material is further disposed between the first circuit element and the second substrate of the first surface.

7. The apparatus of claim 1, further comprising a first air cavity between the first electrode and the second substrate.

8. The apparatus of claim 7, wherein the first electrode is disposed in the first air cavity surrounded by the insulating material.

9. The apparatus of claim 5, wherein the insulating material comprises a polymer.

10. The apparatus of claim 7, further comprising a metal layer between the first air cavity and the second substrate.

11. The apparatus of claim 10, wherein the metal layer is coupled to a terminal configured to be coupled to a reference voltage.

12. The apparatus of claim 7, further comprising: a second electrode disposed on the first surface; and a second air cavity separate from the first air cavity between the second electrode and the second substrate.

13. The apparatus of claim 12, further comprising: a third electrode in the first air cavity; and a fourth electrode in the second air cavity, wherein: the first electrode and the third electrode comprise a first resonator having a first resonant frequency; and the second electrode and the fourth electrode comprise a second resonator having a second resonant frequency.

14. The apparatus of claim 12, further comprising at least a third air cavity.

15. The apparatus of claim 12, further comprising: a wall comprising the insulating material disposed between the first air cavity and the second air cavity; and a second via disposed through the second substrate and through the wall and coupled to the second electrode. ​ ​ ​ ​ 16. The apparatus of claim 1, wherein the second substrate comprises a material having a thermal conductivity greater than twenty (20) Watts per meter Kelvin (W / (m·K)).

17. The apparatus of claim 1, wherein the second substrate comprises a material having a thermal conductivity greater than thirty (30) Watts per meter Kelvin (W / (m·K)).

18. The apparatus of claim 1, wherein the second substrate has a thickness in a range of sixty (60) microns to one hundred twenty-five (125) microns.

19. The apparatus of claim 1, wherein the first via comprises a monolithic metal via.

20. The apparatus of claim 1, wherein the first via comprises a cylindrical layer comprising a first metal and a core comprising a second material.

21. The apparatus of claim 1, further comprising a contact on the second substrate, the contact coupled to the first via and configured to couple the first via to an external circuit.

22. The apparatus of claim 1, wherein the second substrate comprises one of high resistivity silicon (HRS), porous silicon (pSi), and aluminum oxide.

23. The apparatus of claim 1, further comprising a filter comprising a surface acoustic wave (SAW) resonator comprising the first electrode coupled to the first circuit element, wherein the first circuit element comprises at least one of a metal-insulator-metal (MIM) capacitor and an inductor.

24. The apparatus of claim 1 integrated into a device selected from a group consisting of: a set top box; an entertainment unit; a navigation device; a communications device; a fixed location data unit; a mobile location data unit; a global positioning system (GPS) device; a mobile phone; a cellular phone; a smartphone; a session initiation protocol (SIP) phone; a tablet; a phablet; a server; a computer; a portable computer; a mobile computing device; a wearable computer; a desktop computer; a personal digital assistant (PDA); a monitor; a computer monitor; a television; a tuner; a radio; a satellite radio; a music player; a digital music player; a portable music player; a digital video player; a video player; a digital video disc (DVD) player; a portable digital video player; an automobile; a transportation component; avionics systems; a drone; and a multicopter.

25. A method of manufacturing an apparatus, the method comprising: forming a first substrate comprising a first surface, the first surface comprising a piezoelectric material; forming a first electrode on the first surface; forming a second substrate; forming a first via extending through the second substrate and coupled to the first electrode; and forming a first circuit element electrically coupled to the first via and between the second substrate and the first surface of the first substrate.

26. The method of claim 25, further comprising forming an insulating material between the second substrate and the first surface of the first substrate, wherein: forming the first circuit element further comprises forming the first circuit element on the second substrate; and forming the insulating material further comprises forming the insulating material on the first circuit element.

27. The method of claim 26, wherein forming the insulating material and the first circuit element further comprises: forming a first portion of the insulating material on the second substrate; forming the first circuit element on the first portion of the insulating material; and forming a second portion of the insulating material on the first circuit element.

28. The method of claim 25, further comprising: disposing the second substrate comprising the insulating material and the first circuit element on the first substrate comprising the first electrode, wherein forming the first via further comprises: forming an interstice through the second substrate and the insulating material to the first electrode; and forming a metal in the interstice.

29. An acoustic filter package, comprising: a package substrate; and a device, the device comprising: a first substrate comprising a first surface, the first surface comprising a piezoelectric material; a first electrode disposed on the first surface; a second substrate; a first via extending through the second substrate and coupled to the first electrode; a first circuit element electrically coupled to the first via and disposed between the second substrate and the first surface of the first substrate; and a contact coupling the first via to the package substrate.

30. The acoustic filter package of claim 29, wherein the first circuit element comprises one of a capacitor and an inductor. ​ ​

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