Multi-station chemical vapor deposition metal cementation device and use method

Abstract

The invention relates to the technical field of chemical vapor deposition equipment, and discloses a multi-station chemical vapor deposition metal cementation device which is characterized in that a tool main body is matched with a high-temperature reactor of the chemical vapor deposition equipment, and a plurality of clamping stations are matched through division of a plurality of layers of trays and a fan-shaped area, so that the maximum layout of the clamping stations is realized, and the working efficiency is improved. And the large-scale engineering production requirement is met, turbine blades of different models can be adapted, and good universality is achieved. The gas flow adjusting distributors are matched with the gas guide holes of the clamping stations, so that process gas can be effectively restrained to uniformly flow to the clamping stations, the industrial problems of uniform distribution and accurate distribution of the process gas in the large-volume high-temperature reactor are successfully solved, and uniform coating of aluminide infiltrated layers of blades of the stations is guaranteed. Meanwhile, the tool structure design of the adaptive equipment can adapt to a high-temperature and strong-corrosion process environment, deformation in long-term use is reduced, the requirement of the process for the stability of the device is met, the layout of all parts is reasonable, and rapid and efficient clamping is achieved in an assisting mode.

Description

Technical Field

[0001] This invention belongs to the technical field of chemical vapor deposition equipment, specifically a multi-station chemical vapor deposition metal infiltration device and its usage method. Background Technology

[0002] The CVA440BL-T type chemical vapor deposition equipment is mainly used for depositing Cr, Co, Si, and Ti doped aluminum compound coatings on the complex internal cavities and flow channels of various turbine blades. The process requires the use of Ar, H2, HCl and AlCl3 gases, with a total flow rate of 80-100 L / min, a pressure of 200-500 mbar, and a reaction temperature of 1000-1050℃. The main reaction gas pipe of the equipment is located at the bottom of the tooling, and the high-temperature reactor has a size of φ800mm×1350mm.

[0003] The core challenge in the industry is to evenly distribute and precisely deliver process gas to each station within this large-volume high-temperature reactor, achieving uniform aluminide coating on the blades while simultaneously meeting the requirements of maximizing the number of clamping stations, controllable gas parameters, adaptability to multiple blade models, high-efficiency mass production, and low deformation under high temperature and strong corrosion.

[0004] The existing solution is to develop multi-station CVD metal infiltration tooling with precise airflow distribution function through independent design, independent manufacturing and process testing and verification. This will overcome the problem of uniform gas distribution and meet the comprehensive technical requirements of clamping, versatility, high-efficiency production and corrosion resistance.

[0005] Existing technologies lack dedicated tooling solutions adapted to this equipment, have no similar design experience for reference, and lack mature technologies that can simultaneously meet the comprehensive requirements of precise gas distribution, maximized clamping across multiple workstations, universal compatibility with multiple blade models, rapid clamping for mass production, and low deformation under high temperature and strong corrosion environments. This means that it is impossible to achieve uniform coating on blades directly through existing technologies or by referencing mature solutions. It is necessary to start from scratch with tooling structure design, material selection, process matching, and experimental verification, which not only increases the difficulty of research and development but also poses the risk of insufficient compatibility between design and equipment and processes. Summary of the Invention

[0006] This invention provides a multi-station chemical vapor deposition metal infiltration device that solves the problem of not being able to simultaneously meet the comprehensive requirements of precise gas distribution, maximized clamping at multiple stations, universal compatibility with multiple blade types, rapid clamping for mass production, and low deformation under high temperature and strong corrosion environments.

[0007] To achieve the above objectives, the present invention provides the following technical solution: A multi-station chemical vapor deposition (CVD) metal infiltration apparatus includes a tooling body adapted to the high-temperature reactor of a CVD equipment. The tooling body has at least two layers of trays, each tray being divided into multiple sector areas. Each sector area has multiple clamping stations, and each clamping station has a gas guide hole. A gas flow regulator is installed on the airflow channel between two adjacent trays, and the gas flow regulator constrains the process gas to flow evenly to each clamping station.

[0008] Preferably, the main body of the tooling is made of GH3039 alloy.

[0009] Preferably, the pallet has three layers, each layer is divided into 8 sector areas, each sector area is provided with 3 clamping stations, and the total number of clamping stations of the tooling body is 72.

[0010] Preferably, the gas flow regulating distributor is a throttling block, with the throttling block between the lower tray and the middle tray having a size of φ42mm×35mm and an inner hole of φ14-φ15mm, and the throttling block between the middle tray and the upper tray having a size of φ42mm×35mm and an inner hole of φ24-φ25mm.

[0011] Preferably, the clamping station is a sunken structure with dimensions of 74mm × 40mm, and each clamping station is provided with 3 air guide holes.

[0012] Preferably, the size of the air guide hole is φ8.8-φ9mm.

[0013] Preferably, the process gas includes Ar, H2, HCl and AlCl3, and the total gas flow rate is 80-100 L / min.

[0014] A method of using a multi-station chemical vapor deposition metallization apparatus includes: The metal infiltration device was installed in the high-temperature reactor of a chemical vapor deposition equipment of model CVA440BL-T. The clamping position of the tray inside the tooling body and the gas flow regulating distributor on the main airflow channel between adjacent trays were inspected. The blade is clamped in the clamping station of the tooling body, with the air guide hole on the clamping station facing the surface of the blade to be penetrated. Start the CVD equipment and set the chemical vapor deposition process parameters. The process gas is introduced into the tooling body, and the airflow is constrained by the throttling block between adjacent trays to flow evenly through the air guide holes of each clamping station, so that the process gas can fully react with the blade surface. Keeping the set process parameters unchanged, after the heat preservation deposition reaches the preset time, stop the ventilation and cool down, check the aluminide diffusion layer on the blade surface, and end the work if it meets the standard.

[0015] Preferably, the aluminide diffusion layer includes at least one of aluminized, chromium-based, aluminum-chromium-based, aluminum-silicon-based, aluminum-titanium-based, and platinum-aluminum-based.

[0016] Preferably, the aluminum oxide diffusion layer meets the following requirements: a depth of 20–27 μm, a diffusion layer depth uniformity of ±4 μm, and an aluminum content of 21–26 wt% in the diffusion layer.

[0017] Compared with existing technologies, this invention has the following advantages: This invention provides a multi-station chemical vapor deposition (CVD) metal infiltration device. By adapting the main tooling body to the high-temperature reactor of the CVD equipment, the multi-layered trays and fan-shaped zones combined with multiple clamping stations maximize the layout of the clamping stations, meeting the needs of large-scale engineering production, and also adapting to different turbine blade models, exhibiting good versatility. The gas flow regulating distributor, in conjunction with the gas guide holes of the clamping stations, effectively constrains the uniform flow of process gas to each clamping station, successfully solving the industry problem of uniform distribution and precise delivery of process gas in large-volume high-temperature reactors, ensuring uniform aluminide coating on the blades at each station. Simultaneously, the tooling structure design adapted to the equipment is suitable for high-temperature and highly corrosive process environments, reducing deformation during long-term use, meeting the process requirements for device stability, and the rational layout of each component facilitates rapid and efficient clamping, meeting the needs of actual production applications. Attached Figure Description

[0018] To more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of the present invention and should not be regarded as a limitation on the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0019] Figure 1 This is a schematic diagram of a multi-station chemical vapor deposition metal infiltration device according to an embodiment of the present invention; Figure 2 This is a schematic diagram of the pallet and clamping station arrangement according to an embodiment of the present invention; In the diagram, 1-tray, 2-clamping station, 3-air vent. Detailed Implementation

[0020] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. The components of the embodiments of the present invention described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.

[0021] Therefore, the following detailed description of the embodiments of the invention provided in the accompanying drawings is not intended to limit the scope of the claimed invention, but merely to illustrate selected embodiments of the invention. All other embodiments obtained by those skilled in the art based on the embodiments of the invention without inventive effort are within the scope of protection of the invention.

[0022] It should be noted that similar labels and letters in the following figures indicate similar items. Therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures.

[0023] In the description of this invention, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing the invention and for simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance. In the description of this invention, it should be noted that unless otherwise explicitly specified and limited, the terms "installed," "connected," "linked," and "set up" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal communication between two components.

[0024] To enable those skilled in the art to better understand the technical solution of the present invention, the present invention will be further described in detail below with reference to the accompanying drawings.

[0025] like Figure 1 As shown, the present invention provides a multi-station chemical vapor deposition metal infiltration device, including a tooling body adapted to the high-temperature reactor of chemical vapor deposition equipment. The tooling body is provided with at least two layers of trays 1, each layer of tray 1 is divided into multiple fan-shaped areas, and each fan-shaped area is provided with multiple clamping stations 2. The clamping stations 2 are provided with gas guide holes 3. A gas flow regulating distributor is provided on the airflow channel between two adjacent layers of trays. The gas flow regulating distributor constrains the process gas to flow evenly to each clamping station.

[0026] By adapting the main body of the tooling to the high-temperature reactor of the chemical vapor deposition equipment, the multi-layered trays and fan-shaped zones, combined with multiple clamping stations, maximize the layout of clamping stations to meet the needs of large-scale engineering production, while also being adaptable to different types of turbine blades, demonstrating good versatility. The gas flow regulating distributor, in conjunction with the gas guide holes at the clamping stations, effectively ensures the uniform flow of process gas to each clamping station, successfully solving the industry challenge of uniform distribution and precise delivery of process gas in large-volume high-temperature reactors, ensuring uniform aluminide diffusion coating on the blades at each station. Simultaneously, the tooling structure design adapts to the high-temperature and highly corrosive process environment, reducing deformation during long-term use and meeting the process requirements for equipment stability. Furthermore, the rational layout of each component facilitates rapid and efficient clamping, perfectly aligning with actual production application needs.

[0027] Detailed settings: Considering the highly corrosive gases HCl and AlCl3, and the service temperature of 1000–1050℃, based on years of experience in vapor phase metal infiltration, GH3039 material was selected, with the following specific parameters: GH3039 is a single-phase austenitic solid solution strengthened alloy with good oxidation resistance at 1000℃, stable microstructure after long-term use, and good weldability. Its linear expansion coefficient at 800℃ is only 1047 (J / kg·K), and it costs 260 yuan / kg. It does not deform under high temperature and strong corrosion environment for a long time, making it the preferred material for manufacturing chemical vapor deposition aluminizing tooling.

[0028] Tooling dimensions and workstations: The chemical vapor deposition (CVD) equipment (model CVA440 BL-T) features a high-temperature reactor with dimensions of φ800mm × 1350mm. Considering the effective area of ​​the equipment (φ750mm × 1000mm) and maximizing blade size and the number of workstations (loading capacity), a three-tiered tray design is implemented. Each tray is divided into eight sector areas, with three clamping stations in each sector, totaling 72 workstations. Details are as follows... Figure 2 As shown.

[0029] Gas flow regulating distributor: The basic parameters of the chemical vapor deposition aluminizing process are as follows: temperature 1000–1050℃, reactor pressure 200–500 mbar, and gas flow rate (Ar, H2, HCl, and AlCl3) reaching 80–100 L / min. In the initial stage of the process experiment, waste blades were placed on three trays for chemical vapor deposition aluminizing. Dissection of the samples from the upper, middle, and lower layers revealed aluminized layer depth of 36–40 μm, 20–30 μm, and 5–10 μm, respectively, showing significant differences. To eliminate these differences in aluminized layer depth at different stations, process parameters, including the mass of the aluminizing agent, gas type and flow rate, and the pressure inside the high-temperature reactor, were adjusted in an attempt to reduce the variation in aluminized layer depth. However, precise control of the airflow channels and flow rates within the tooling could not be achieved. To address this, by simulating the airflow path of this type of tooling, a "gas flow regulating distributor" was added to the main airflow channel between the lower and middle layers of the tooling, as well as between the middle and upper layers of the trays. This forced the process gas to flow evenly to the three layers of trays and 72 workstations, achieving precise control over the penetration depth and composition.

[0030] Through multiple batches of process tests, the appropriate dimensions of the gas flow regulating distributor for the φ750mm×1000mm tooling were determined. Specifically, a φ42mm (φ14mm inner hole)×35mm throttling block was placed between the lower and middle layers, and a φ42mm (φ24mm inner hole)×35mm throttling block was placed between the middle and upper layers. This allows for the realization of complex cooling cavities with an aluminate depth of ±4 micrometers and uniform and controllable diffusion layer depth.

[0031] Tooling versatility Chemical vapor deposition (CVD) metallization processes involve aluminide diffusion layers doped with cobalt, silicon, and chromium, including six types: aluminized (Al), chromium (Cr), aluminum-chromium (AlCr), aluminum-silicon (AlSi), aluminum-titanium (AlTi), and platinum-aluminum (PtAl). Each diffusion layer process involves multiple blade types, and the tenon tooth dimensions of each blade type vary significantly. If a tooling is designed and manufactured for each process of each blade type, the estimated number of tooling sets required is approximately 36 sets (each set costing approximately 400,000 RMB). This presents significant challenges for on-site storage and management, and is also prohibitively expensive. Therefore, a universal tooling solution is needed to minimize the amount of tooling required on-site.

[0032] Based on the design requirements of multi-station and versatility, the airflow field was simulated, and the tray was divided into 8 sector blocks, with 3 stations fabricated for each sector block. A sunken station, rectangular in shape (74mm × 40mm), was adopted, with 3 air guide holes (φ8.8mm) on each station to constrain the airflow path and achieve even airflow distribution. Simultaneously, specialized fixtures matching the blade profile (74mm × 40mm) were designed and manufactured to accommodate the different blade tenon shapes, enabling rapid and efficient clamping and achieving versatility for multi-station tooling. Currently, this type of tooling meets the needs of rapid and efficient clamping and mass production of different blades.

[0033] Application Effects of Multi-Station Chemical Vapor Deposition Metal Infiltration Unit The appearance of the device (tooling) is as follows: Figure 1 As shown.

[0034] Based on the φ800mm×1350mm high-temperature reactor of the chemical vapor deposition (CVD) equipment (model CVA440 BL-T), the device manufactures a φ750mm×1000mm tooling, namely a three-layer pallet, with 8 sector areas on each pallet and 3 clamping stations in each sector area, for a total of 72 stations, maximizing the number of stations (loading capacity).

[0035] Detection results of chemical vapor deposition aluminizing The "Multi-station Chemical Vapor Deposition Metallization Device with Precise Airflow Distribution" of this model was used to perform chemical vapor deposition aluminizing on a certain type of gas turbine turbine blade. The results of the aluminized layer depth and microstructure detection on the turbine blade at 72 stations on three trays (upper, middle and lower) are shown in the table below.

[0036] Table 1. Detection results of aluminizing depth of a turbine blade using chemical vapor deposition.

[0037] According to the test results in the table above, the depth of the aluminized layer at different positions of the upper, middle and lower trays is 20-27 μm (23±4 μm), the uniformity of the aluminized layer is ±4 μm, and the aluminum content in the aluminized layer is 21-26% (wt).

[0038] The foregoing has shown and described the basic principles, main features, and advantages of the present invention. It will be apparent to those skilled in the art that the invention is not limited to the details of the exemplary embodiments described above, and that the invention can be implemented in other specific forms without departing from its spirit or essential characteristics. Therefore, the embodiments should be considered illustrative and non-limiting in all respects, and the scope of the invention is defined by the appended claims rather than the foregoing description. Thus, all variations falling within the meaning and scope of equivalents of the claims are intended to be included within the scope of the invention. No reference numerals in the claims should be construed as limiting the scope of the claims.

[0039] Furthermore, it should be understood that although this specification describes embodiments, not every embodiment contains only one independent technical solution. This narrative style is merely for clarity. Those skilled in the art should consider the specification as a whole, and the technical solutions in each embodiment can be appropriately combined to form other embodiments that can be understood by those skilled in the art. The above content is only for illustrating the technical concept of the present invention and should not be construed as limiting the scope of protection of the present invention. Any modifications made based on the technical concept proposed in this invention shall fall within the scope of protection of the claims of this invention.

Claims

1. A multi-station chemical vapor deposition (CVD) metal infiltration apparatus, characterized in that, The tooling body includes a tooling main body adapted to the high-temperature reactor of chemical vapor deposition equipment. The tooling main body is provided with at least two layers of trays (1). Each layer of trays (1) is divided into multiple fan-shaped areas. Each fan-shaped area is provided with multiple clamping stations (2). Each clamping station (2) is provided with a gas guide hole (3). A gas flow regulating distributor is provided on the airflow channel between two adjacent layers of trays. The gas flow regulating distributor constrains the process gas to flow evenly to each clamping station.

2. The multi-station chemical vapor deposition metallization apparatus according to claim 1, characterized in that, The main body of the tooling is made of GH3039 alloy.

3. The multi-station chemical vapor deposition metal infiltration apparatus according to claim 1, characterized in that, The pallet has three layers, each layer is divided into 8 sector areas, and each sector area is equipped with 3 clamping stations, for a total of 72 clamping stations for the main body of the tooling.

4. A multi-station chemical vapor deposition metal infiltration apparatus according to claim 3, characterized in that, The gas flow regulating distributor is a throttling block. The throttling block between the lower tray and the middle tray has a size of φ42mm×35mm and an inner hole of φ14-φ15mm. The throttling block between the middle tray and the upper tray has a size of φ42mm×35mm and an inner hole of φ24-φ25mm.

5. A multi-station chemical vapor deposition metallization apparatus according to claim 1, characterized in that, The clamping station is a sunken structure with dimensions of 74mm × 40mm, and each clamping station is equipped with 3 air guide holes.

6. A multi-station chemical vapor deposition metal infiltration apparatus according to claim 1, characterized in that, The size of the air guide hole is φ8.8-φ9mm.

7. A multi-station chemical vapor deposition metal infiltration apparatus according to claim 1, characterized in that, The process gases include Ar, H2, HCl and AlCl3, and the total gas flow rate is 80-100 L / min.

8. A method of using a multi-station chemical vapor deposition metallization apparatus, characterized in that, A multi-station chemical vapor deposition metallization apparatus according to any one of claims 1-7, comprising: The metal infiltration device is installed in the high-temperature reactor of a chemical vapor deposition equipment of model CVA440BL-T. The clamping station (2) of the tray (1) in the main body of the tooling and the gas flow regulating distributor on the main airflow channel between adjacent trays are inspected. The blade is clamped in the clamping station (2) of the tooling body, and the air guide hole on the clamping station faces the surface of the blade to be penetrated. Start the CVD equipment and set the chemical vapor deposition process parameters. The process gas is introduced into the tooling body, and the airflow is constrained by the throttling block between adjacent trays to flow evenly through the air guide holes of each clamping station, so that the process gas can fully react with the blade surface. Keeping the set process parameters unchanged, after the heat preservation deposition reaches the preset time, stop the ventilation and cool down, check the aluminide diffusion layer on the blade surface, and end the work if it meets the standard.

9. The method of using a multi-station chemical vapor deposition metallization apparatus according to claim 8, characterized in that, The aluminide diffusion layer includes at least one of aluminized, chromium-based, aluminum-chromium, aluminum-silicon, aluminum-titanium, and platinum-aluminum.

10. The method of using a multi-station chemical vapor deposition metallization apparatus according to claim 8, characterized in that, The required standards for the aluminide diffusion layer are: a depth of 20–27 μm, a diffusion layer depth uniformity of ±4 μm, and an aluminum content of 21–26 wt% in the diffusion layer.

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