Laminated electronic device

Abstract

An electronic device includes a laminate and first to third inductors. The first inductor is connected with the third inductor, but is not connected with the second inductor. The second inductor includes: a first portion extending side by side with a portion of the first inductor; and a second portion connected with the first portion and extending away from the first inductor. The third inductor includes: a third portion extending so as to sandwich the first portion of the second inductor between the third portion and a portion of the first inductor; and a fourth portion connected to the third portion and extending in a manner close to the first inductor.

Description

Technical Field

[0001] This disclosure relates to a stacked electronic device having an inductor formed inside a stack comprising a plurality of stacked dielectric layers and wound around an axis orthogonal to the stacking direction of the plurality of dielectric layers. Background Technology

[0002] One type of electronic device used in communication devices is a bandpass filter with multiple resonators. These resonators are, for example, LC resonators constructed using inductors and capacitors. LC resonators require a higher Q value. Increasing the Q value of the inductor is an effective way to increase the Q value of an LC resonator.

[0003] Furthermore, in recent years, the market has demanded miniaturization and space-saving design of communication equipment, which in turn requires miniaturization of the bandpass filters used in such equipment. As a bandpass filter suitable for miniaturization, a laminated bandpass filter is known, comprising multiple stacked dielectric layers and multiple conductor layers. As an inductor used in a laminated bandpass filter, an inductor consisting of conductor layers and multiple vias is known, wound around an axis orthogonal to the stacking direction of the multiple dielectric layers. Such an inductor structure has a design suitable for increasing the Q value.

[0004] International Publication No. 2018 / 034103 discloses a stacked LC filter using a stacked body, which is formed by stacking multiple dielectric layers. The stacked LC filter includes a ring-shaped inductor formed by connecting via conductors to both ends of a line-shaped conductor pattern.

[0005] Inductors wound on an axis orthogonal to the stacking direction of multiple dielectric layers occupy a significant amount of space within the laminate. Therefore, as the number of such inductors increases, the space available for other components such as capacitors decreases, making it difficult to achieve the desired characteristics.

[0006] The above problems are not limited to filters, but apply to all electronic devices that contain inductors and capacitors. Summary of the Invention

[0007] (a) Technical problems to be solved

[0008] One of the objectives of this disclosure is to provide a stacked electronic device having multiple inductors, which ensures space for configuring components other than the multiple inductors.

[0009] (II) Technical Solution

[0010] A stacked electronic device according to one embodiment of this disclosure includes: a stack body comprising a plurality of stacked dielectric layers; a first inductor, a second inductor, and a third inductor integrated with the stack body. The stack body has: a first surface and a second surface located at opposite ends of the stacking direction of the plurality of dielectric layers; a first side surface, a second side surface, a third side surface, and a fourth side surface connecting the first surface and the second surface. The first side surface and the second side surface face opposite directions. The third side surface and the fourth side surface face opposite directions. The first inductor, the second inductor, and the third inductor are respectively wound around a first axis, a second axis, and a third axis orthogonal to the stacking direction. The first inductor is connected to the third inductor but not to the second inductor. The second inductor includes: a first portion extending side-by-side with a portion of the first inductor; and a second portion connected to the first portion and extending away from the first inductor. The third inductor includes: a third portion extending such that a first portion of the second inductor is sandwiched between it and a portion of the first inductor; and a fourth portion connected to the third portion and extending close to the first inductor.

[0011] (III) Beneficial Effects

[0012] In a stacked electronic device according to one embodiment of this disclosure, the second inductor includes: a first portion extending side-by-side with a portion of the first inductor; and a second portion connected to the first portion and extending away from the first inductor. The third inductor includes: a third portion extending with the first portion of the second inductor sandwiched between itself and a portion of the first inductor; and a fourth portion connected to the third portion and extending close to the first inductor. Thus, according to this disclosure, space can be ensured for configuring components other than the first to third inductors.

[0013] Other objects, features, and advantages of this disclosure will become fully apparent from the following description. Attached Figure Description

[0014] Figure 1 This is a circuit diagram illustrating an example of the circuit structure of a stacked electronic device according to an exemplary embodiment of the present disclosure.

[0015] Figure 2 This is a perspective view showing the appearance of a stacked electronic device according to an exemplary embodiment of the present disclosure.

[0016] Figure 3 This is a perspective view of a stack of stacked electronic devices illustrating an exemplary embodiment of the present disclosure.

[0017] Figures 4A to 4CThis is an explanatory diagram showing the pattern formation surfaces of the first to third dielectric layers in a stack of a multilayer electronic device according to an exemplary embodiment of the present disclosure.

[0018] Figures 5A to 5C This is an explanatory diagram showing the pattern formation surface of the fourth to sixth dielectric layers in a stack of a multilayer electronic device according to an exemplary embodiment of the present disclosure.

[0019] Figures 6A to 6C This is an explanatory diagram showing the pattern formation surface of the seventh to ninth dielectric layers in a stack of a multilayer electronic device according to an exemplary embodiment of the present disclosure.

[0020] Figures 7A to 7C This is an explanatory diagram showing the pattern formation surface of the tenth to twelfth dielectric layers in a stack of a multilayer electronic device according to an exemplary embodiment of the present disclosure.

[0021] Figures 8A to 8C This is an explanatory diagram showing the pattern formation surface of the thirteenth to fifteenth dielectric layers in a stack of a multilayer electronic device according to an exemplary embodiment of the present disclosure.

[0022] Figures 9A to 9C This is an explanatory diagram showing the pattern formation surface of the sixteenth to eighteenth dielectric layers in a stack of a multilayer electronic device according to an exemplary embodiment of the present disclosure.

[0023] Figure 10A This is an explanatory diagram showing the pattern formation surface of the nineteenth dielectric layer in a stack of multilayer electronic devices according to an exemplary embodiment of the present disclosure.

[0024] Figure 10B This is an explanatory diagram showing the pattern formation surfaces of the twentieth and twenty-first dielectric layers in a stack of a multilayer electronic device according to an exemplary embodiment of the present disclosure.

[0025] Figure 10C This is an explanatory diagram showing the pattern formation surface of the twenty-second dielectric layer in a stack of multilayer electronic devices according to an exemplary embodiment of the present disclosure.

[0026] Figures 11A to 11C This is an explanatory diagram showing the pattern formation surface of the twenty-third to twenty-fifth dielectric layers in a stack of a multilayer electronic device according to an exemplary embodiment of the present disclosure.

[0027] Figure 12A as well as Figure 12B This is an explanatory diagram showing the pattern formation surfaces of the twenty-sixth and twenty-seventh dielectric layers in a stack of a multilayer electronic device according to an exemplary embodiment of the present disclosure.

[0028] Figure 13 This is a perspective view showing the interior of a stack of laminated electronic devices in an exemplary embodiment of the present disclosure.

[0029] Figure 14 This is a top view showing a portion of the interior of a stack of multilayer electronic devices in an exemplary embodiment of this disclosure.

[0030] Figure 15 This is a top view showing another portion of the interior of the stack of the stacked electronic device in an exemplary embodiment of the present disclosure. Detailed Implementation

[0031] Hereinafter, exemplary embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. First, referring to... Figure 1 The general structure of a stacked electronic device (hereinafter referred to simply as electronic device) 1 according to an exemplary embodiment of the present disclosure will be described. Figure 1 This is a circuit diagram representing the circuit structure of electronic device 1. Figure 1 In the example shown is a demultiplexer (duplexer). Electronic device 1 includes: a common terminal 2, a first signal terminal 3, a second signal terminal 4, a first circuit 10, and a second circuit 20.

[0032] The first circuit 10 is disposed between the common terminal 2 and the first signal terminal 3 in terms of circuit structure. The second circuit 20 is disposed between the common terminal 2 and the second signal terminal 4 in terms of circuit structure. Furthermore, in this application, the phrase "in terms of circuit structure" refers to the configuration on the circuit diagram, rather than the configuration in the physical structure.

[0033] The first circuit 10 is a filter configured to selectively allow signals with frequencies within a first passband to pass through. The second circuit 20 is a filter configured to selectively allow signals with frequencies within a second passband that are different from the first passband to pass through. Both the first circuit 10 and the second circuit 20 are LC filter circuits comprising at least one inductor and at least one capacitor. In an exemplary embodiment, both the first circuit 10 and the second circuit 20 are bandpass filters. Furthermore, in an exemplary embodiment, the first passband is a frequency band lower than the second passband.

[0034] A first signal with a frequency within the first passband input to the common terminal 2 selectively passes through the first circuit 10 and is output from the first signal terminal 3. A second signal with a frequency within the second passband input to the common terminal 2 selectively passes through the second circuit 20 and is output from the second signal terminal 4. In this way, the electronic device 1 separates the first signal and the second signal.

[0035] Next, refer to Figure 1An example of the circuit structure of electronic device 1 will be described. Electronic device 1 also includes an inductor L10 with one end connected to a common terminal 2.

[0036] The first circuit 10 includes inductors L11, L12, L13, L14 and capacitors C11, C12, C13, C14, C15, C16, C17, C18, C19.

[0037] One end of inductor L11 is connected to the other end of inductor L10. One end of capacitor C11 is connected to the other end of inductor L11. One end of capacitor C12 is connected to the other end of capacitor C11. One end of capacitor C13 is connected to one end of capacitor C11. The other end of capacitor C13 is connected to the other end of capacitor C12.

[0038] One end of capacitor C14 is connected to one end of capacitor C11. One end of inductor L12 is connected to the junction of capacitors C11 and C12. One end of capacitor C15 is connected to the other end of capacitor C12. The other ends of inductor L12, capacitors C14, and C15 are each connected to ground.

[0039] One end of inductor L13 is connected to the other end of capacitor C12. One end of inductor L14 is connected to the other end of inductor L13. The other end of inductor L14 is connected to the first signal terminal 3. Capacitor C16 is connected in parallel with respect to inductor L13. Capacitor C17 is connected in parallel with respect to inductor L14.

[0040] Capacitor C18 is connected to the junction of inductors L13 and L14. One end of capacitor C19 is connected to the other end of inductor L14. The other ends of capacitors C18 and C19 are each connected to ground.

[0041] The second circuit 20 includes inductors L21, L22, L23, L24, L25, L26 and capacitors C21, C22, C23, C24, C25, C26, C27, C28, C29, C30, C31, C32, C33.

[0042] One end of inductor L21 is connected to one end of capacitor C21. One end of inductor L22 is connected to one end of capacitor C22. One end of inductor L23 is connected to one end of capacitor C23. One end of inductor L24 is connected to one end of capacitor C24. One end of inductor L25 is connected to one end of capacitor C25. The other end of each of inductors L21-L25 and capacitors C21-C25 is connected to ground.

[0043] One end of capacitor C26 is connected to the other end of inductor L10. The other end of capacitor C26, one end of capacitor C27, one end of capacitor C28, and one end of capacitor C31 are connected to one end of inductor L21. The other end of capacitor C27 and one end of capacitor C29 are connected to one end of inductor L22. The other end of capacitor C28, one end of capacitor C30, and one end of capacitor C32 are connected to one end of inductor L23. The other end of capacitor C30 and the other end of capacitor C31 are connected to one end of inductor L24. The other end of capacitor C29, the other end of capacitor C32, and one end of capacitor C33 are connected to one end of inductor L25.

[0044] One end of inductor L26 is connected to the other end of capacitor C33. The other end of inductor L26 is connected to the second signal terminal 4.

[0045] Next, refer to Figure 2 as well as Figure 3 The other structures of electronic device 1 will be described. Figure 2 This is a three-dimensional view showing the appearance of electronic device 1. Figure 3 This is a three-dimensional diagram representing the stacked structure of electronic device 1.

[0046] Electronic device 1 includes a laminate 50. The laminate 50 includes multiple stacked dielectric layers and multiple conductors (multiple conductor layers and multiple vias). Common terminal 2, first signal terminal 3, second signal terminal 4, first circuit 10 and second circuit 20 are integrated with the laminate 50.

[0047] The laminate 50 has: a first surface 50A and a second surface 50B located at both ends of the stacking direction T of the plurality of dielectric layers; and four side surfaces 50C to 50F connecting the first surface 50A and the second surface 50B. Side surfaces 50C and 50D face opposite sides to each other, and side surfaces 50E and 50F also face opposite sides to each other. Side surfaces 50C to 50F may be perpendicular to the first surface 50A and the second surface 50B.

[0048] Here, as Figure 2 and Figure 3 As shown, the X, Y, and Z directions are defined. The X, Y, and Z directions are orthogonal to each other. In an exemplary embodiment, a direction parallel to the stacking direction T is designated as the Z direction. Furthermore, a direction opposite to the X direction is designated as the -X direction, a direction opposite to the Y direction as the -Y direction, and a direction opposite to the Z direction as the -Z direction. Additionally, the statement "when viewed from a specified direction (e.g., the stacking direction T)" means viewing the object from a separate position along the specified direction or a direction parallel to the specified direction.

[0049] like Figure 3As shown, the first surface 50A is located at the end of the laminate 50 in the -Z direction. The first surface 50A is also the bottom surface of the laminate 50. The second surface 50B is located at the end of the laminate 50 in the Z direction. The second surface 50B is also the top surface of the laminate 50. The side surface 50C is located at the end of the laminate 50 in the -X direction. The side surface 50D is located at the end of the laminate 50 in the X direction. The side surface 50E is located at the end of the laminate 50 in the -Y direction. The side surface 50F is located at the end of the laminate 50 in the Y direction.

[0050] like Figure 2 as well as Figure 3 As shown, the electronic device 1 also includes electrodes 111, 112, and 113 disposed on the first surface 50A of the laminate 50. Electrode 111 is positioned closer to side surface 50E than side surface 50F. Electrodes 112 and 113 are positioned closer to side surface 50F than side surface 50E. Furthermore, electrode 112 is disposed near the corner where side surface 50D intersects with side surface 50F, and electrode 113 is disposed near the corner where side surface 50C intersects with side surface 50F. Electrode 111 corresponds to a common terminal 2, electrode 112 corresponds to a first signal terminal 3, and electrode 113 corresponds to a second signal terminal 4. Therefore, the common terminal 2, the first signal terminal 3, and the second signal terminal 4 are disposed on the first surface 50A of the laminate 50.

[0051] The electronic device 1 also includes grounding terminals 114, 115, and 116 disposed on the first surface 50A of the laminate 50. Grounding terminal 114 is disposed between electrode 112 and electrode 113. Grounding terminal 115 is disposed between electrode 111 and side surface 50D. Grounding terminal 116 is disposed between electrode 111 and side surface 50C. Grounding terminals 114, 115, and 116 are respectively connected to grounding components.

[0052] The electronic device 1 further includes a shielding conductor 80, which is made of conductor and integrated relative to the laminate 50. The shielding conductor 80 is disposed on at least one of the four sides 50C to 50F. In an exemplary embodiment, the shielding conductor 80 includes a first conductor portion 80E disposed on a side 50E of the laminate 50 and a second conductor portion 80F disposed on a side 50F of the laminate 50. The first conductor portion 80E covers the entire or substantially the entire side 50E. The second conductor portion 80F covers the entire or substantially the entire side 50F.

[0053] The shielding conductor 80 further includes a conductor portion 80B disposed on a second surface 50B of the laminate 50, a conductor portion 80C disposed on a side surface 50C of the laminate 50, and a conductor portion 80D disposed on a side surface 50D of the laminate 50. The conductor portion 80B covers the entire second surface 50B. The conductor portion 80C covers the entire or substantially the entire side surface 50C. The conductor portion 80D covers the entire or substantially the entire side surface 50D.

[0054] The shielding conductor 80 may also comprise multiple stacked metal layers. In this case, it is preferable that the first conductor portion 80E, the second conductor portion 80F, and the conductor portions 80B, 80C, and 80D are continuous. That is, it is preferable that the first conductor portion 80E and the second conductor portion 80F are both connected to the conductor portions 80B, 80C, and 80D.

[0055] The shielding conductor 80 is electrically connected to the grounding terminals 114, 115, and 116. The laminate 50 includes a plurality of conductors that electrically connect the shielding conductor 80 to the grounding terminals 114, 115, and 116.

[0056] Next, refer to Figures 4A to 12B An example of the plurality of dielectric layers and the plurality of conductors constituting the laminate 50 will be described. In this example, the laminate 50 includes twenty-seven stacked dielectric layers. Hereinafter, these twenty-seven dielectric layers will be referred to as the first layer to the twenty-seventh layer from bottom to top. In addition, the first layer to the twenty-seventh layer will be indicated by reference numerals 51 to 77 in the accompanying drawings.

[0057] exist Figures 4A to 12A In the diagram, multiple circles represent multiple through-holes. Multiple through-holes are formed on each of the dielectric layers 51 to 76. Each through-hole is formed by filling the holes with conductive paste. Each of the multiple through-holes is connected to an electrode, terminal, conductor layer, or other through-hole. In the following description, the connection relationships between each of the multiple through-holes and the electrode, terminal, conductor layer, or other through-hole are explained in the case of stacked dielectric layers 51 to 77. Furthermore, in... Figures 4A to 12A In the figure, specific through holes among multiple through holes are marked with reference numerals.

[0058] Figure 4A This indicates the patterned surface of the first dielectric layer 51. Electrodes 111 to 113 and ground terminals 114 to 116 are formed on the patterned surface of the dielectric layer 51.

[0059] exist Figure 4AThe two through holes, marked with reference numerals 51T6 and 51T7 respectively, are connected to the grounding terminal 115. Furthermore, in the following description, the through hole marked with reference numeral 51T6 will be simply referred to as through hole 51T6. Additionally, other through holes marked with reference numerals besides through hole 51T6 will also be described in the same way as through hole 51T6. Figure 4A The two through holes 51T8 shown are connected to the grounding terminal 114. Figure 4A The two through holes 51T9 shown are connected to the grounding terminal 116.

[0060] Figure 4B This indicates the patterning surface of the second dielectric layer 52. Conductor layers 521, 522, 523, 524, and 525 are formed on the patterning surface of the dielectric layer 52. Through-hole 51T6 and... Figure 4B The through-hole 52T6 shown is connected to the conductor layer 524. Through-hole 51T7 and... Figure 4B The through-hole 52T7 shown is connected to the conductor layer 525. Two through-holes 51T8 and two through-holes 51T9 are respectively connected to... Figure 4B The two through holes 52T8 and two through holes 52T9 shown are connected.

[0061] Figure 4C This indicates the patterning surface of the third dielectric layer 53. Conductor layers 531, 532, and 533 are formed on the patterning surface of the dielectric layer 53. Through-hole 52T6 and... Figure 4C The through hole 53T6 is shown for connection. Through hole 52T7, two through holes 52T8, and... Figure 4C The through holes 53T1b, 53T10, and 53T11 shown are connected to the conductor layer 533. The two through holes 52T9 are connected to... Figure 4C The two through holes shown are connected by 53T9.

[0062] Figure 5A This indicates the patterning surface of the fourth dielectric layer 54. Conductor layers 541, 542, 543, 544, and 545 are formed on the patterning surface of the dielectric layer 54. Through-holes 53T1b and 53T11 are also present. Figure 5A The through holes 54T1b and 54T11 shown are connected to the conductor layer 542. Through hole 53T6 is connected to... Figure 5A The through hole 54T6 is shown. The two through holes 53T9 are connected to... Figure 5A The two through holes 54T9 shown are connected. Through hole 53T10 and... Figure 5A The through-hole 54T10 shown is connected to the conductor layer 545.

[0063] Figure 5B This indicates the patterning surface of the fifth dielectric layer 55. Conductor layers 551, 552, 553, 554, and 555 are formed on the patterning surface of the dielectric layer 55. Two through-holes 54T9 are connected to... Figure 5B The two through holes 55T9 shown are connected. Through holes 54T1b, 54T6, 54T10, and 54T11 are respectively connected to... Figure 5B The through holes 55T1b, 55T6, 55T10, and 55T11 shown are connected. Figure 5B The through-hole 55T5a shown is connected to the conductor layer 551.

[0064] Figure 5C This indicates the patterning surface of the sixth dielectric layer 56. Conductor layers 561, 562, 563, and 564 are formed on the patterning surface of the dielectric layer 56. Through-holes 55T1b, 55T5a, 55T6, and 55T11 are respectively connected to... Figure 5C The through holes 56T1b, 56T5a, 56T6, and 56T11 are shown. Two through holes 55T9 and 55T10 are also connected. Figure 5C The through-hole 56T5b shown is connected to the conductor layer 561.

[0065] Figure 6A This indicates the patterning surface of the seventh dielectric layer 57. Conductor layers 571, 572, 573, 574, and 575 are formed on the patterning surface of dielectric layer 57. Through-holes 56T1b, 56T5a, 56T5b, 56T6, and 56T11 are respectively connected to... Figure 6A The through holes 57T1b, 57T5a, 57T5b, 57T6, and 57T11 shown are connected. Figure 6A The through holes 57T2a and 57T4a shown are connected to conductor layers 572 and 571, respectively.

[0066] Figure 6B This indicates the patterning surface of the eighth dielectric layer 58. Conductor layers 581, 582, and 583 are formed on the patterning surface of the dielectric layer 58. Through-holes 57T1b, 57T2a, 57T4a, 57T5a, 57T5b, 57T6, and 57T11 are respectively connected to... Figure 6B The through holes 58T1b, 58T2a, 58T4a, 58T5a, 58T5b, 58T6, and 58T11 shown are connected.

[0067] Figure 6C This indicates the patterning surface of the ninth dielectric layer 59. Conductor layers 591, 592, and 593 are formed on the patterning surface of the dielectric layer 59. Through-holes 58T1b, 58T2a, 58T4a, 58T5a, 58T5b, 58T6, and 58T11 are respectively connected to... Figure 6C The through holes 59T1b, 59T2a, 59T4a, 59T5a, 59T5b, 59T6, and 59T11 shown are connected. Figure 6C The through-hole 59T1a shown is connected to the conductor layer 592.

[0068] Figure 7A This indicates the patterning surface of the tenth dielectric layer 60. Conductor layers 601, 602, 603, 604, and 605 are formed on the patterning surface of the dielectric layer 60. Through-holes 59T1a, 59T2a, 59T4a, and 59T5b are respectively connected to... Figure 7A The through holes 60T1a, 60T2a, 60T4a, and 60T5b are shown. Through holes 59T1b and 59T11 are also shown. Figure 7A The through holes 60T1b and 60T11 shown are connected to the conductor layer 602. Through holes 59T5a and... Figure 7A The through-hole 60T5a shown is connected to the conductor layer 601. Through-hole 59T6 and... Figure 7A The through-hole 60T6 shown is connected to the conductor layer 604. The conductor layer 602 is connected to the second conductor portion 80F of the shielding conductor 80 (see reference). Figure 2 The conductor layer 604 is connected to the first conductor portion 80E of the shielding conductor 80 (see reference). Figure 2 )connect.

[0069] Figure 7B This indicates the patterning surface of the eleventh dielectric layer 61. Conductor layers 611, 612, 613, and 614 are formed on the patterning surface of dielectric layer 61. Through-holes 60T1a, 60T2a, 60T4a, 60T5a, and 60T6 are respectively connected to... Figure 7B The through holes 61T1a, 61T2a, 61T4a, 61T5a, and 61T6 are shown. Through holes 60T1b and 60T11 are also shown. Figure 7B The through-hole 61T1b shown is connected to the conductor layer 613. Figure 7B The through-hole 61T3a shown is connected to the conductor layer 612. Through-hole 60T5b and... Figure 7B The through holes 61T4b and 61T5b shown are connected to the conductor layer 614. The conductor layer 614 is connected to the first conductor portion 80E of the shielding conductor 80 (see reference). Figure 2 )connect.

[0070] Figure 7C This indicates the patterning surface of the twelfth dielectric layer 62. Conductor layers 621 and 622 are formed on the patterning surface of dielectric layer 62. Through-holes 61T1a, 61T1b, 61T2a, 61T3a, 61T4a, 61T4b, 61T5a, 61T5b, and 61T6 are respectively connected to... Figure 7C The through holes 62T1a, 62T1b, 62T2a, 62T3a, 62T4a, 62T4b, 62T5a, 62T5b, and 62T6 shown are connected.

[0071] Figure 8AThis indicates the pattern formation surface of the thirteenth dielectric layer 63. Through-holes 62T1a, 62T1b, 62T2a, 62T3a, 62T4a, 62T4b, 62T5a, 62T5b, and 62T6 are respectively connected to… Figure 8A The through holes 63T1a, 63T1b, 63T2a, 63T3a, 63T4a, 63T4b, 63T5a, 63T5b, and 63T6 shown are connected.

[0072] Figure 8B This indicates the pattern formation surface of the fourteenth dielectric layer 64. Through-holes 63T1a, 63T1b, 63T2a, 63T3a, 63T4a, 63T4b, 63T5a, 63T5b, and 63T6 are respectively connected to… Figure 8B The through holes 64T1a, 64T1b, 64T2a, 64T3a, 64T4a, 64T4b, 64T5a, 64T5b, and 64T6 shown are connected.

[0073] Figure 8C This indicates the patterned surface of the fifteenth dielectric layer 65. Conductor layers 651 and 652 are formed on the patterned surface of dielectric layer 65. Through-holes 64T1a, 64T2a, 64T3a, 64T4a, 64T4b, 64T5a, 64T5b, and 64T6 are respectively connected to... Figure 8C The through holes 65T1a, 65T2a, 65T3a, 65T4a, 65T4b, 65T5a, 65T5b, and 65T6 are shown. Through hole 64T1b and... Figure 8C The through holes 65T1b and 65T3b shown are connected to the conductor layer 651.

[0074] Figure 9A This indicates the patterning surface of the sixteenth dielectric layer 66. A conductor layer 661 is formed on the patterning surface of the dielectric layer 66. Through-holes 65T1a, 65T1b, 65T2a, 65T3a, 65T3b, 65T4a, 65T4b, 65T5a, and 65T5b are respectively connected to… Figure 9A The through holes 66T1a, 66T1b, 66T2a, 66T3a, 66T3b, 66T4a, 66T4b, 66T5a, and 66T5b shown are connected. Through hole 65T6 is connected to conductor layer 661.

[0075] Figure 9B This indicates the pattern formation surface of the seventeenth dielectric layer 67. Conductor layers 671 and 672 are formed on the pattern formation surface of dielectric layer 67. Through-holes 66T1a, 66T1b, 66T2a, 66T3a, 66T3b, 66T4a, 66T4b, 66T5a, and 66T5b are respectively connected to... Figure 9BThe through holes 67T1a, 67T1b, 67T2a, 67T3a, 67T3b, 67T4a, 67T4b, 67T5a, and 67T5b shown are connected.

[0076] Figure 9C This indicates the patterning surface of the eighteenth dielectric layer 68. Conductor layers 681 and 682 are formed on the patterning surface of dielectric layer 68. Through-holes 67T1a, 67T1b, 67T2a, 67T3a, 67T3b, 67T4a, 67T4b, 67T5a, and 67T5b are respectively connected to... Figure 9C The through holes 68T1a, 68T1b, 68T2a, 68T3a, 68T3b, 68T4a, 68T4b, 68T5a, and 68T5b shown are connected.

[0077] Figure 10A This indicates the patterning surface of the nineteenth dielectric layer 69. Conductor layers 691 and 692 are formed on the patterning surface of dielectric layer 69. Through-holes 68T1a, 68T1b, 68T2a, 68T3a, 68T3b, 68T4a, 68T4b, 68T5a, and 68T5b are respectively connected to... Figure 10A The through holes 69T1a, 69T1b, 69T2a, 69T3a, 69T3b, 69T4a, 69T4b, 69T5a, and 69T5b shown are connected.

[0078] Figure 10B These indicate the patterned surfaces of the twentieth and twenty-first dielectric layers 70 and 71, respectively. Through-holes 69T1a, 69T1b, 69T2a, 69T3a, 69T3b, 69T4a, 69T4b, 69T5a, and 69T5b are connected to through-holes 70T1a, 70T1b, 70T2a, 70T3a, 70T3b, 70T4a, 70T4b, 70T5a, and 70T5b formed in dielectric layer 70, respectively. Furthermore, on dielectric layers 70 and 71, adjacent through-holes with the same reference numerals are interconnected.

[0079] Figure 10C This indicates the pattern formation surface of the twenty-second dielectric layer 72. A conductor layer 721 is formed on the pattern formation surface of the dielectric layer 72. Through-holes 70T1a, 70T1b, 70T2a, 70T3a, 70T3b, 70T4a, 70T4b, 70T5a, and 70T5b formed in the dielectric layer 71 respectively connect to… Figure 10C The through holes 72T1a, 72T1b, 72T2a, 72T3a, 72T3b, 72T4a, 72T4b, 72T5a, and 72T5b shown are connected.

[0080] Figure 11AThis indicates the pattern formation surface of the twenty-third dielectric layer 73. A conductor layer 731 is formed on the pattern formation surface of the dielectric layer 73. Through-holes 72T1a, 72T1b, 72T2a, 72T3a, 72T3b, 72T4a, 72T4b, 72T5a, and 72T5b are respectively connected to… Figure 11A The through holes 73T1a, 73T1b, 73T2a, 73T3a, 73T3b, 73T4a, 73T4b, 73T5a, and 73T5b shown are connected.

[0081] Figure 11B This indicates the patterning surface of the twenty-fourth dielectric layer 74. A conductor layer 741 is formed on the patterning surface of the dielectric layer 74. Through-holes 73T1a, 73T1b, 73T2a, 73T3a, 73T3b, 73T4a, and 73T5a are respectively connected to… Figure 11B The through holes 74T1a, 74T1b, 74T2a, 74T3a, 74T3b, 74T4a, and 74T5a are shown. Through holes 73T4b and 73T5b are connected. Figure 11B The through-holes 74T4b and 74T5b shown are connected to the conductor layer 741. The conductor layer 741 is connected to the first conductor portion 80E of the shielding conductor 80 (see reference). Figure 2 )connect.

[0082] Figure 11C This indicates the patterning surface of the twenty-fifth dielectric layer 75. A conductor layer 751 is formed on the patterning surface of the dielectric layer 75. Through-holes 74T1a, 74T2a, 74T3a, 74T4a, 74T4b, 74T5a, and 74T5b are respectively connected to… Figure 11C The through holes 75T1a, 75T2a, 75T3a, 75T4a, 75T4b, 75T5a, and 75T5b are shown. Through holes 74T1b and 74T3b are also shown. Figure 11C The through holes 75T1b and 75T3b shown are connected to the conductor layer 751. The conductor layer 751 is connected to the second conductor portion 80F of the shielding conductor 80 (see reference). Figure 2 )connect.

[0083] Figure 12A This indicates the patterning surface of the twenty-sixth dielectric layer 76. Conductor layers 761, 762, 763, 764, and 765 are formed on the patterning surface of dielectric layer 76. Conductor layer 764 is connected to conductor layer 762. Figure 12A In the diagram, the boundary between conductor layer 762 and conductor layer 764 is represented by a dotted line.

[0084] Conductor layer 761 has a first end 761a and a second end 761b located at both ends along its long side. Conductor layer 762 has a first end 762a and a second end 762b located at both ends along its long side. Conductor layer 763 has a first end 763a and a second end 763b located at both ends along its long side. Conductor layer 764 has a first end 764a and a second end 764b located at both ends along its long side. Conductor layer 765 has a first end 765a and a second end 765b located at both ends along its long side.

[0085] Compared to the second conductor portion 80F of the shielding conductor 80, the first end 761a of the conductor layer 761, the second end 762b of the conductor layer 762, the first end 763a of the conductor layer 763, the second end 764b of the conductor layer 764, and the second end 765b of the conductor layer 765 are located closer to the first conductor portion 80E of the shielding conductor 80. Figure 12A The second end 761b of conductor layer 761, the first end 762a of conductor layer 762, the second end 763b of conductor layer 763, the first end 764a of conductor layer 764, and the first end 765a of conductor layer 765 are located closer to the second conductor portion 80F of shielding conductor 80 than the first conductor portion 80E of shielding conductor 80. Figure 12A (The upper part of the middle). The second end 762b of conductor layer 762 is connected to the near part of the second end 764b of conductor layer 764.

[0086] Through hole 75T1a and Figure 12A The through-hole 76T1a shown is connected to the portion near the first end 761a of the conductor layer 761. Through-hole 75T1b and... Figure 12A The through-hole 76T1b shown is connected to the portion near the second end 761b of the conductor layer 761. Through-hole 75T2a and... Figure 12A The through-hole 76T2a shown is connected to the portion near the first end 762a of the conductor layer 762. Through-hole 75T3a and... Figure 12A The through-hole 76T3a shown is connected to the portion near the first end 763a of the conductor layer 763. Through-hole 75T3b and... Figure 12A The through-hole 76T3b shown is connected to a portion near the second end 763b of the conductor layer 763. Through-hole 75T4a and... Figure 12A The through-hole 76T4a shown is connected to the portion near the first end 764a of the conductor layer 764. Through-hole 75T4b and... Figure 12A The through-hole 76T4b shown is connected to a portion near the second end 764b of the conductor layer 764. Through-hole 75T5a and... Figure 12AThe through-hole 76T5a shown is connected to a portion near the first end 765a of the conductor layer 765. Through-hole 75T5b and... Figure 12A The through-hole 76T5b shown is connected to the portion near the second end 765b of the conductor layer 765.

[0087] Figure 12B This indicates the patterning surface of the twenty-seventh dielectric layer 77. Conductor layers 771, 772, 773, 774, and 775 are formed on the patterning surface of dielectric layer 77. Conductor layer 774 is connected to conductor layer 772. Figure 12B In the diagram, the boundary between conductor layer 772 and conductor layer 774 is represented by a dotted line.

[0088] Conductor layer 771 has a first end 771a and a second end 771b located at both ends along its long side. Conductor layer 772 has a first end 772a and a second end 772b located at both ends along its long side. Conductor layer 773 has a first end 773a and a second end 773b located at both ends along its long side. Conductor layer 774 has a first end 774a and a second end 774b located at both ends along its long side. Conductor layer 775 has a first end 775a and a second end 775b located at both ends along its long side.

[0089] Compared to the second conductor portion 80F of the shielding conductor 80, the first end 771a of the conductor layer 771, the second end 772b of the conductor layer 772, the first end 773a of the conductor layer 773, the second end 774b of the conductor layer 774, and the second end 775b of the conductor layer 775 are located closer to the first conductor portion 80E of the shielding conductor 80. Figure 12B The second end 771b of conductor layer 771, the first end 772a of conductor layer 772, the second end 773b of conductor layer 773, the first end 774a of conductor layer 774, and the first end 775a of conductor layer 775 are located closer to the second conductor portion 80F of shielding conductor 80 than the first conductor portion 80E of shielding conductor 80. Figure 12B (Position located on the upper side of the middle). The second end 772b of conductor layer 772 is connected to the vicinity of the second end 774b of conductor layer 774.

[0090] Through-hole 76T1a is connected to the vicinity of the first end 771a of conductor layer 771. Through-hole 76T1b is connected to the vicinity of the second end 771b of conductor layer 771. Through-hole 76T2a is connected to the vicinity of the first end 772a of conductor layer 772. Through-hole 76T3a is connected to the vicinity of the first end 773a of conductor layer 773. Through-hole 76T3b is connected to the vicinity of the second end 773b of conductor layer 773. Through-hole 76T4a is connected to the vicinity of the first end 774a of conductor layer 774. Through-hole 76T4b is connected to the vicinity of the second end 774b of conductor layer 774. Through-hole 76T5a is connected to the vicinity of the first end 775a of conductor layer 775. Through-hole 76T5b is connected to the vicinity of the second end 775b of conductor layer 775.

[0091] Figure 3 The stack 50 shown is constructed by stacking the first to twenty-seventh dielectric layers 51 to 77 in such a manner that the pattern-forming surface of the first dielectric layer 51 becomes the first surface 50A of the stack 50, and the surface of the twenty-seventh dielectric layer 77 opposite to the pattern-forming surface becomes the second surface 50B of the stack 50.

[0092] Figure 13 This refers to the interior of the laminate 50, which consists of the first to the twenty-seventh dielectric layers 51 to 77. For example... Figure 13 As shown, inside the laminate 50, there are laminated... Figures 4A to 12B The diagram shows multiple conductor layers and multiple vias.

[0093] Below, on Figure 1 The circuit components of the electronic device 1 shown are similar to Figures 4A to 12B The correspondence of the internal components of the stack 50 shown will be explained. The conductor layer 652 constitutes at least a portion of the inductor L10.

[0094] Next, the first circuit 10 will be described. Conductor layers 721 and 731 and the vias connecting these conductor layers constitute at least a portion of inductor L11. Conductor layers 661, 671, 681, and 691 and the plurality of vias connecting these conductor layers constitute at least a portion of inductor L12. Conductor layers 672, 682, and 692 and the plurality of vias connecting these conductor layers constitute at least a portion of inductor L13. Conductor layers 611 and 621 and the vias connecting these conductor layers constitute at least a portion of inductor L14.

[0095] Conductor layers 563 and 573 and the dielectric layer 56 between these conductor layers constitute at least a portion of capacitor C11. Conductor layers 573 and 583 and the dielectric layer 57 between these conductor layers constitute at least a portion of capacitor C12. Conductor layers 583 and 593 and the dielectric layer 58 between these conductor layers constitute at least a portion of capacitor C13. Conductor layers 533 and 544 and the dielectric layer 53 between these conductor layers constitute at least a portion of capacitor C14.

[0096] Conductor layers 543 and 553 and the dielectric layer 54 between these conductor layers constitute at least a portion of capacitor C15. Conductor layers 532 and 543 and the dielectric layer 53 between these conductor layers constitute at least a portion of capacitor C16. Conductor layers 523 and 532 and the dielectric layer 52 between these conductor layers constitute at least a portion of capacitor C17. Conductor layers 532 and 533 constitute at least a portion of capacitor C18. Conductor layers 553 and 562 and the dielectric layer 55 between these conductor layers constitute at least a portion of capacitor C19.

[0097] Next, the constituent elements of the second circuit 20 will be described. These include conductor layers 592, 761, and 771, and vias 53T1b, 54T1b, 55T1b, 56T1b, 57T1b, 58T1b, 59T1a, 59T1b, 60T1a, 60T1b, 61T1a, 61T1b, 62T1a, 62T1b, 63T1a, 63T1b, 64T1a, 64T1b, 65T1a, and 65T1b. b, 66T1a, 66T1b, 67T1a, 67T1b, 68T1a, 68T1b, 69T1a, 69T1b, 70T1a, 70T1b, 72T1a, 72T1b, 73T1a, 73T1b, 74T1a, 74T1b, 75T1a, 75T1b, 76T1a, and 76T1b constitute at least a portion of inductor L21.

[0098] Conductor layers 762 and 772 and vias 57T2a, 58T2a, 59T2a, 60T2a, 61T4b, 61T2a, 62T4b, 62T2a, 63T4b, 63T2a, 64T4b, 64T2a, 65T4b, 65T2a, 66T4b, 66T2a, 67T4b, 67T2a, 68T4b, 68T2a, 69T4b, 69T2a, 70T4b, 70T2a, 72T4b, 72T2a, 73T4b, 73T2a, 74T4b, 74T2a, 75T4b, 75T2a, 76T4b, 76T2a constitute at least a portion of inductor L22.

[0099] Conductor layers 763 and 773 and vias 61T3a, 62T3a, 63T3a, 64T3a, 65T3a, 65T3b, 66T3a, 66T3b, 67T3a, 67T3b, 68T3a, 68T3b, 69T3a, 69T3b, 70T3a, 70T3b, 72T3a, 72T3b, 73T3a, 73T3b, 74T3a, 74T3b, 75T3a, 75T3b, 76T3a, 76T3b constitute at least a portion of inductor L23.

[0100] Conductor layers 764 and 774 and vias 57T4a, 58T4a, 59T4a, 60T4a, 61T4a, 61T4b, 62T4a, 62T4b, 63T4a, 63T4b, 64T4a, 64T4b, 65T4a, 65T4b, 66T4a, 66T4b, 67T4a, 67T4b, 68T4a, 68T4b, 69T4a, 69T4b, 70T4a, 70T4b, 72T4a, 72T4b, 73T4a, 73T4b, 74T4a, 74T4b, 75T4a, 75T4b, 76T4a, 76T4b constitute at least a portion of inductor L24.

[0101] Conductor layers 765, 775 and vias 55T5a, 56T5a, 56T5b, 57T5a, 57T5b, 58T5a, 58T5b, 59T5a, 59T5b, 60T5a, 60T5b, 61T5a, 61T5b, 62T5a, 62T5b, 63T5a, 63T5b, 64T5a, 64T5b, 65T5a, 65T 5b, 66T5a, 66T5b, 67T5a, 67T5b, 68T5a, 68T5b, 69T5a, 69T5b, 70T5a, 70T5b, 72T5a, 72T5b, 73T5a, 73T5b, 74T5a, 74T5b, 75T5a, 75T5b, 76T5a, and 76T5b constitute at least a portion of inductor L25.

[0102] Conductor layer 522 constitutes at least a portion of inductor L26.

[0103] Conductor layers 561 and 564 constitute at least a portion of capacitor C21. Conductor layers 533 and 552 and the dielectric layers 53 and 54 between these conductor layers constitute at least a portion of capacitor C22. Conductor layers 561 and 575 and the dielectric layer 56 between these conductor layers constitute at least a portion of capacitor C23. Conductor layers 561 and 571 and the dielectric layer 56 between these conductor layers constitute at least a portion of capacitor C24. Conductor layers 551 and 561 and the dielectric layer 55 between these conductor layers constitute at least a portion of capacitor C25.

[0104] Conductor layers 555, 564, 574, 582 and the dielectric layers 55, 56, 57 between these conductor layers constitute at least a portion of capacitor C26. Conductor layers 572, 582 and the dielectric layer 57 between these conductor layers constitute at least a portion of capacitor C27. Conductor layers 575, 582 and the dielectric layer 57 between these conductor layers constitute at least a portion of capacitor C28. Conductor layers 541, 552 and the dielectric layer 54 between these conductor layers constitute at least a portion of capacitor C29.

[0105] Conductor layers 571, 581 and the dielectric layer 57 between these conductor layers constitute at least a portion of capacitor C30. Conductor layers 571, 582 and the dielectric layer 57 between these conductor layers constitute at least a portion of capacitor C31. Conductor layers 581, 591 and the dielectric layer 58 between these conductor layers constitute at least a portion of capacitor C32. Conductor layers 531, 541 and the dielectric layer 53 between these conductor layers constitute at least a portion of capacitor C33.

[0106] Next, refer to Figures 1 to 15 The structural features of the electronic device 1 in the exemplary embodiment will be described. First, the structure of the inductors L21 to L25 of the second circuit 20 will be described in detail. Figure 14 This is a top view showing a portion of the interior of electronic device 1. Figure 15 This is a top view showing another part of the interior of electronic device 1. Figure 14 as well as Figure 15 A portion of each of inductors L21 to L25 is shown in the figure.

[0107] Inductors L21, L22, L23, and L24 correspond to the "first inductor," "second inductor," "third inductor," and "fourth inductor" in this disclosure, respectively. Grounding terminals 114 and 115 correspond to the "first grounding terminal" in this disclosure. Grounding terminal 116 corresponds to the "second grounding terminal" in this disclosure.

[0108] Inductors L21 through L25 are all inductors wound on an axis extending in a direction orthogonal to the stacking direction T. Here, the columnar structure formed by connecting multiple through-holes in series is called a columnar conductor. The columnar conductor extends in a direction parallel to the stacking direction T. Inductors L21 through L25 each contain at least one conductor layer and at least one columnar conductor.

[0109] Inductor L21 includes columnar conductors T1a and T1b extending along the stacking direction T, a conductor layer 761 connecting columnar conductors T1a and T1b, and a conductor layer 592 connected to columnar conductor T1a. The columnar conductor T1a is connected to a portion near a first end 761a of conductor layer 761. The columnar conductor T1b is connected to a portion near a second end 761b of conductor layer 761. Conductor layer 592 is connected to the end of columnar conductor T1a opposite to the side of conductor layer 761.

[0110] The columnar conductor T1a is formed by connecting the through holes 59T1a, 60T1a, 61T1a, 62T1a, 63T1a, 64T1a, 65T1a, 66T1a, 67T1a, 68T1a, 69T1a, 70T1a, 72T1a, 73T1a, 74T1a, and 75T1a in series. The columnar conductor T1b is constructed by connecting the through holes 53T1b, 54T1b, 55T1b, 56T1b, 57T1b, 58T1b, 59T1b, 60T1b, 61T1b, 62T1b, 63T1b, 64T1b, 65T1b, 66T1b, 67T1b, 68T1b, 69T1b, 70T1b, 72T1b, 73T1b, 74T1b, and 75T1b in series.

[0111] The columnar conductor T1b is connected to the second conductor portion 80F of the shielding conductor 80 via conductor layers 602 and 751. In addition, the columnar conductor T1b is connected to the grounding terminal 114 via conductor layer 533 and through hole 52T8, and is connected to the grounding terminal 115 via conductor layer 533, through hole 52T7, conductor layer 525 and through hole 51T7.

[0112] Inductor L21 is wound around an axis A1 orthogonal to the stacking direction T to form an opening surrounded by conductor layers 592 and 761 and columnar conductors T1a and T1b. Figure 14 as well as Figure 15 For convenience, axis A1 is depicted as an axis extending in a direction parallel to the X direction, but axis A1 can also be tilted relative to the direction parallel to the X direction.

[0113] Inductor L21 also includes a conductor layer 771 and through-holes 76T1a and 76T1b that electrically connect conductor layer 761 to conductor layer 771.

[0114] Inductor L22 includes a columnar conductor T2a extending along the stacking direction T and a conductor layer 762 connected to the columnar conductor T2a. The columnar conductor T2a is connected to a portion near the first end 762a of the conductor layer 762.

[0115] The columnar conductor T2a is formed by connecting the through holes 57T2a, 58T2a, 59T2a, 60T2a, 61T2a, 62T2a, 63T2a, 64T2a, 65T2a, 66T2a, 67T2a, 68T2a, 69T2a, 70T2a, 72T2a, 73T2a, 74T2a, and 75T2a in series.

[0116] The second end 762b of conductor layer 762 is connected to conductor layer 764. A columnar conductor T4b is connected to conductor layer 764. The columnar conductor T4b is constructed by connecting vias 61T4b, 62T4b, 63T4b, 64T4b, 65T4b, 66T4b, 67T4b, 68T4b, 69T4b, 70T4b, 72T4b, 73T4b, 74T4b, and 75T4b in series. The columnar conductor T4b essentially constitutes part of inductor L22. The connection relationship between the columnar conductor T4b and the first conductor portion 80E of shielding conductor 80, and the connection relationship between the columnar conductor T4b and grounding terminal 116, will be explained later.

[0117] Inductor L22 is wound around an axis A2 orthogonal to the stacking direction T to form an opening surrounded by conductor layer 762 and columnar conductors T2a and T4b. Figure 14 as well as Figure 15 For convenience, axis A2 is described as an axis extending in a direction parallel to the X direction, but axis A2 can also be tilted relative to the direction parallel to the X direction.

[0118] Inductor L22 also includes conductor layer 772 and via 76T2a electrically connecting conductor layer 762 to conductor layer 772.

[0119] Inductor L23 includes columnar conductors T3a and T3b extending along the stacking direction T, and a conductor layer 763 connecting columnar conductors T3a and T3b. The columnar conductor T3a is connected to a portion near a first end 763a of conductor layer 763. The columnar conductor T3b is connected to a portion near a second end 763b of conductor layer 763.

[0120] The columnar conductor T3a is formed by connecting through holes 61T3a, 62T3a, 63T3a, 64T3a, 65T3a, 66T3a, 67T3a, 68T3a, 69T3a, 70T3a, 72T3a, 73T3a, 74T3a, and 75T3a in series. The columnar conductor T3b is formed by connecting through holes 65T3b, 66T3b, 67T3b, 68T3b, 69T3b, 70T3b, 72T3b, 73T3b, 74T3b, and 75T3b in series.

[0121] The columnar conductor T3b is connected to the second conductor portion 80F of the shielding conductor 80 via the conductor layer 751. Additionally, the columnar conductor T3b is connected to the grounding terminal 114 via the conductor layer 651, a portion of the columnar conductor T1b, the conductor layer 533, and through holes 52T8 and 51T8, and is also connected to the grounding terminal 115 via the conductor layer 651, a portion of the columnar conductor T1b, the conductor layer 533, the through hole 52T7, the conductor layer 525, and the through hole 51T7.

[0122] Inductor L23 is wound around axis A3, which is orthogonal to the stacking direction T, to form an opening surrounded by conductor layer 763 and columnar conductors T3a and T3b. Figure 14 as well as Figure 15 For convenience, axis A3 is described as an axis extending in a direction parallel to the X direction, but axis A3 can also be tilted relative to the direction parallel to the X direction.

[0123] Inductor L23 also includes conductor layer 773 and through-holes 76T3a and 76T3b that electrically connect conductor layer 763 to conductor layer 773.

[0124] Inductor L24 includes columnar conductors T4a and T4b extending along the stacking direction T, and a conductor layer 764 connecting columnar conductors T4a and T4b. Columnar conductor T4a is connected to a portion near a first end 764a of conductor layer 764. Columnar conductor T4b is connected to a portion near a second end 764b of conductor layer 764.

[0125] The columnar conductor T4a is formed by connecting the through holes 57T4a, 58T4a, 59T4a, 60T4a, 61T4a, 62T4a, 63T4a, 64T4a, 65T4a, 66T4a, 67T4a, 68T4a, 69T4a, 70T4a, 72T4a, 73T4a, 74T4a, and 75T4a in series.

[0126] The columnar conductor T4b is connected to the first conductor portion 80E of the shielding conductor 80 via conductor layers 614 and 741. Additionally, the columnar conductor T4b is connected to the grounding terminal 116 via conductor layer 614, a portion of the columnar conductor T5b, conductor layer 561, and through-holes 55T9, 54T9, 53T9, 52T9, and 51T9. Furthermore, the structure of the columnar conductor T5b will be described later.

[0127] Inductor L24 is wound around an axis A4 orthogonal to the stacking direction T to form an opening surrounded by conductor layer 764 and columnar conductors T4a and T4b. Figure 14 as well as Figure 15For convenience, axis A4 is described as an axis extending in a direction parallel to the X direction, but axis A4 can also be tilted relative to the direction parallel to the X direction.

[0128] Inductor L24 also includes conductor layer 774 and vias 76T4a and 76T4b that electrically connect conductor layer 764 to conductor layer 774.

[0129] Inductor L25 includes columnar conductors T5a and T5b extending along the stacking direction T, and a conductor layer 765 connecting the columnar conductors T5a and T5b. The columnar conductor T5a is connected to a portion near a first end 765a of the conductor layer 765. The columnar conductor T5b is connected to a portion near a second end 765b of the conductor layer 765.

[0130] The columnar conductor T5a is formed by connecting the through holes 55T5a, 56T5a, 57T5a, 58T5a, 59T5a, 60T5a, 61T5a, 62T5a, 63T5a, 64T5a, 65T5a, 66T5a, 67T5a, 68T5a, 69T5a, 70T5a, 72T5a, 73T5a, 74T5a, and 75T5a in series. The columnar conductor T5b is formed by connecting the through holes 56T5b, 57T5b, 58T5b, 59T5b, 60T5b, 61T5b, 62T5b, 63T5b, 64T5b, 65T5b, 66T5b, 67T5b, 68T5b, 69T5b, 70T5b, 72T5b, 73T5b, 74T5b, and 75T5b in series.

[0131] The columnar conductor T5b is connected to the first conductor portion 80E of the shielding conductor 80 via conductor layers 614 and 741. In addition, the columnar conductor T5b is connected to the grounding terminal 116 via conductor layer 561 and through holes 55T9, 54T9, 53T9, 52T9, and 51T9.

[0132] Inductor L25 is wound around an axis A5 orthogonal to the stacking direction T to form an opening surrounded by conductor layer 765 and columnar conductors T5a and T5b. Figure 14 as well as Figure 15 For convenience, axis A5 is described as an axis extending in a direction parallel to the X direction, but axis A5 can also be tilted relative to the direction parallel to the X direction.

[0133] Inductor L25 also includes conductor layer 775 and through-holes 76T5a and 76T5b that electrically connect conductor layer 765 to conductor layer 775.

[0134] Next, the characteristics of inductors L21 to L23 will be described. Inductor L21 is connected to inductor L23 in the laminate 50 via conductor layers 651 and 751. However, inductor L21 is not connected to inductor L22 in the laminate 50.

[0135] Inductor L22 includes: a first portion L22A extending side-by-side with a portion of inductor L21; and a second portion L22B connected to the first portion L22A and extending away from inductor L21. Additionally, as Figure 14 As shown, the conductor layer 762 of inductor L22 includes: a first portion 762A extending side-by-side with a portion of conductor layer 761 of inductor L21; and a second portion 762B connected to the first portion 762A and extending away from conductor layer 761. Additionally, as... Figure 15 As shown, the conductor layer 772 of inductor L22 includes: a first portion 772A extending side-by-side with a portion of conductor layer 771 of inductor L21; and a second portion 772B connected to the first portion 772A and extending away from conductor layer 771. The first portion L22A of inductor L22 includes first portions 762A and 772A. The second portion L22B of inductor L22 includes second portions 762B and 772B.

[0136] Inductors L21 and L22, and the first portion L22A (first portions 762A, 772A) of inductors L22, extend in a direction parallel to the Y direction. The second portion L22B (second portions 762B, 772B) of inductor L22 extends close to the cylindrical conductor T4b of inductor L24 and is connected to inductor L24 (conductor layers 764, 774).

[0137] Inductor L23 includes: a third portion L23A extending such that a first portion L22A of inductor L22 is sandwiched between it and a portion of inductor L21; and a fourth portion L23B connected to the third portion L23A and extending close to inductor L21. Additionally, as Figure 14 As shown, the conductor layer 763 of inductor L23 includes: a third portion 763A that extends such that a first portion 762A of conductor layer 762 of inductor L22 is sandwiched between it and a portion of conductor layer 761 of inductor L21; and a fourth portion 763B that is connected to the third portion 763A and extends close to conductor layer 761. Additionally, as... Figure 15As shown, the conductor layer 773 of inductor L23 includes: a third portion 773A that extends such that a first portion 772A of conductor layer 772 of inductor L22 is sandwiched between it and a portion of conductor layer 771 of inductor L21; and a fourth portion 773B that is connected to the third portion 773A and extends close to conductor layer 771. The third portion L23A of inductor L23 includes third portions 763A and 773A. The fourth portion L23B of inductor L23 includes fourth portions 763B and 773B.

[0138] The fourth portion L23B (fourth portions 763B, 773B) of inductor L23 extends close to the cylindrical conductor T1b of inductor L21. The cylindrical conductor T3b of inductor L23 is connected to the fourth portion L23B. The cylindrical conductor T3b is connected to the cylindrical conductor T1b via conductor layers 651, 751. The dimension of the cylindrical conductor T3b in the stacking direction T is smaller than the dimension of the cylindrical conductor T1b in the stacking direction T.

[0139] Inductors L21 and L23 are connected to ground terminal 114. Inductor L22 is connected to ground terminal 116. Compared to side 50E, ground terminal 114 is located closer to side 50F. Compared to side 50F, ground terminal 116 is located closer to side 50E.

[0140] The second end 761b of conductor layer 761 of inductor L21, the second end 771b of conductor layer 771 of inductor L21, the second end 762b of conductor layer 762 of inductor L22, the second end 772b of conductor layer 772 of inductor L22, the second end 763b of conductor layer 763 of inductor L23, and the second end 773b of conductor layer 773 of inductor L23 are connected to a grounding element. Compared to side 50E, the second ends 761b, 763b, 771b, and 773b are positioned closer to side 50F. Compared to side 50F, the second ends 762b and 772b are positioned closer to side 50E.

[0141] The direction of the current flowing through conductor layers 761 and 771 of inductor L21 (towards the grounding element) is from side 50E to side 50F. The direction of the current flowing through conductor layers 762 and 772 of inductor L22 is from side 50F to side 50E. The direction of the current flowing through conductor layers 763 and 773 of inductor L23 is from side 50E to side 50F. That is, the direction of the current flowing through conductor layers 762 and 772 is opposite to that of conductor layers 761, 763, 771, and 773. In an exemplary embodiment, inductors L21 to L23 are configured such that the direction of the current flowing through the conductor layers of two adjacent inductors spaced apart is opposite.

[0142] Viewed from the stacking direction T, the second portion L22B (second portions 762B, 772B) of inductor L22 is disposed between the first end 763a of conductor layer 763 of inductor L23 and the first end 773a of conductor layer 773 of inductor L23 and side surface 50E. Viewed from the stacking direction T, the fourth portion L23B (fourth portions 763B, 773B) of inductor L23 is disposed between the first end 762a of conductor layer 762 of inductor L22 and the first end 772a of conductor layer 772 of inductor L22 and side surface 50F.

[0143] Next, the features of inductors L24 and L25 will be described. Inductor L24 is positioned between itself and inductor L21, sandwiching inductors L22 and L23. Inductor L25 is positioned between itself and inductors L22 and L23, sandwiching inductor L24. Furthermore, inductor L25 is positioned between inductor L24 and side surface 50C. Inductors L24 and L25 extend in a direction parallel to the Y-direction.

[0144] Inductor L24 is connected to inductor L22. However, inductor L24 is not connected to inductors L21 or L23.

[0145] The cylindrical conductor T5b of inductor L25 is connected to the cylindrical conductor T4b of inductor L24 via conductor layers 614 and 741.

[0146] Inductors L24 and L25 are connected to ground terminal 116. Compared to ground conductors 114 and 115, the cylindrical conductor T4b of inductor L24 and the cylindrical conductor T5b of inductor L25 are positioned closer to ground terminal 116.

[0147] The second end 764b of conductor layer 764 of inductor L24, the second end 774b of conductor layer 774 of inductor L24, the second end 765b of conductor layer 765 of inductor L25, and the second end 775b of conductor layer 775 of inductor L25 are connected to a grounding element. Compared to side 50F, the second ends 764b, 765b, 774b, and 775b are positioned closer to side 50E.

[0148] The direction of the current flowing through conductor layers 764 and 774 of inductor L24 (towards the grounding element) is from side 50F to side 50E. The direction of the current flowing through conductor layers 764 and 774 is opposite to that of conductor layers 763 and 773 of inductor L23. The direction of the current flowing through conductor layers 765 and 775 of inductor L25 is from side 50F to side 50E.

[0149] Next, other structural features will be described. Electronic device 1 also includes a columnar conductor formed by connecting vias 53T11, 54T11, 55T11, 56T11, 57T11, 58T11, 59T11, and 60T11 in series. This columnar conductor is connected to the columnar conductor T1b of inductor L21 via conductor layers 533, 542, 602, and 613.

[0150] Next, the function and effects of the electronic device 1 according to the exemplary embodiment will be explained. In the exemplary embodiment, the fourth portion L23B of inductor L23 extends close to inductor L21, and inductor L21 and inductor L23 are interconnected. Therefore, according to the exemplary embodiment, at least a portion of one of inductors L21 and L23 can be omitted, resulting in the ability to arrange components other than inductors L21 and L23 in the omitted space. In particular, in the exemplary embodiment, the columnar conductor T3b of inductor L23 is connected to the columnar conductor T1b of inductor L21, and the size of the columnar conductor T3b in the stacking direction T is smaller than the size of the columnar conductor T1b in the stacking direction T. Therefore, according to the exemplary embodiment, space for arranging components other than inductors L21 and L23 can be ensured in the area overlapping with the columnar conductor T3b when viewed from the stacking direction T.

[0151] Additionally, in an exemplary embodiment, the second portion L22B of inductor L22 extends away from inductor L21, and inductors L22 and L24 are interconnected. Specifically, in an exemplary embodiment, the cylindrical conductor T4b of inductor L24 substantially constitutes part of inductor L22. Thus, according to the exemplary embodiment, one cylindrical conductor can be omitted, resulting in sufficient space for configuring components other than inductors L22 and L24.

[0152] Furthermore, this disclosure is not limited to the exemplary embodiments described above, and various modifications are possible. This disclosure is not limited to... Figure 1 The electronic device with the circuit structure shown can be applied to electronic devices with various circuit structures, provided it meets the requirements of the claims. For example, the stacked electronic device disclosed herein is not limited to a stacked demultiplexer, but can also be a stacked filter device.

[0153] As described above, a stacked electronic device according to one embodiment of the present disclosure includes: a stack body comprising a plurality of stacked dielectric layers; a first inductor, a second inductor, and a third inductor integrated with the stack body. The stack body has: a first surface and a second surface located at opposite ends of the stacking direction of the plurality of dielectric layers; a first side surface, a second side surface, a third side surface, and a fourth side surface connecting the first surface and the second surface. The first side surface and the second side surface face opposite directions. The third side surface and the fourth side surface face opposite directions. The first inductor, the second inductor, and the third inductor are respectively wound around a first axis, a second axis, and a third axis orthogonal to the stacking direction. The first inductor is connected to the third inductor but not to the second inductor. The second inductor includes: a first portion extending side-by-side with a portion of the first inductor; and a second portion connected to the first portion and extending away from the first inductor. The third inductor includes: a third portion extending such that a first portion of the second inductor is sandwiched between it and a portion of the first inductor; and a fourth portion connected to the third portion and extending close to the first inductor.

[0154] The stacked electronic device according to one embodiment of this disclosure may further include a first ground terminal and a second ground terminal respectively disposed on a first surface. A first inductor and a third inductor may be connected to the first ground terminal. A second inductor may be connected to the second ground terminal.

[0155] Furthermore, in a stacked electronic device according to one embodiment of this disclosure, the first ground terminal can be positioned closer to the first side than the second side. Similarly, the second ground terminal can be positioned closer to the second side than the first side. The stacked electronic device according to one embodiment of this disclosure may also include other inductors connected to the first ground terminal or the second ground terminal.

[0156] Furthermore, in a stacked electronic device according to one embodiment of this disclosure, the first inductor, the second inductor, and the third inductor may each include a conductor layer extending in a direction orthogonal to the stacking direction. The conductor layer may have a first end and a second end connected to a grounding element. Compared to the second side surface, the second end of the conductor layer of the first inductor and the second end of the conductor layer of the third inductor may be positioned closer to the first side surface. Compared to the first side surface, the second end of the conductor layer of the second inductor may be positioned closer to the second side surface. A second portion of the second inductor may be positioned between the first end and the second side surface of the conductor layer of the third inductor. A fourth portion of the third inductor may be positioned between the first end and the first side surface of the conductor layer of the second inductor.

[0157] Furthermore, one embodiment of the stacked electronic device disclosed herein may also include a fourth inductor integrated with the stack. The fourth inductor may be wound on a fourth axis orthogonal to the stacking direction and configured to sandwich a second inductor and a third inductor between it and a first inductor. The fourth inductor may be connected to the second inductor but not to the first and third inductors.

[0158] Based on the foregoing description, it can be seen that various methods and variations of this disclosure can be implemented. Therefore, within the scope equivalent to the claims, this disclosure can also be implemented in ways other than the exemplary embodiments described above.

Claims

1. A stacked electronic device, characterized in that, have: A laminate comprising multiple stacked dielectric layers; The first inductor, the second inductor, and the third inductor are integrated with the laminate. The laminate has: a first surface and a second surface located at both ends of the stacking direction of the plurality of dielectric layers; a first side surface, a second side surface, a third side surface, and a fourth side surface connecting the first surface and the second surface. The first side and the second side face opposite directions. The third side and the fourth side face opposite directions. The first inductor, the second inductor, and the third inductor are respectively wound around a first axis, a second axis, and a third axis orthogonal to the stacking direction. The first inductor is connected to the third inductor, but not to the second inductor. The second inductor includes: a first portion extending side-by-side with a portion of the first inductor; and a second portion connected to the first portion and extending away from the first inductor. The third inductor includes: a third portion extending such that it sandwiches the first portion of the second inductor between itself and the portion of the first inductor; and a fourth portion connected to the third portion and extending close to the first inductor.

2. The stacked electronic device according to claim 1, characterized in that, It also includes a first grounding terminal and a second grounding terminal respectively disposed on the first surface. The first inductor and the third inductor are connected to the first ground terminal. The second inductor is connected to the second ground terminal.

3. The stacked electronic device according to claim 2, characterized in that, Compared to the second side, the first grounding terminal is positioned closer to the first side. Compared to the first side, the second grounding terminal is positioned closer to the second side.

4. The stacked electronic device according to claim 2, characterized in that, It also includes other inductors that are connected to the first grounding terminal or the second grounding terminal.

5. The stacked electronic device according to claim 1, characterized in that, The first inductor, the second inductor, and the third inductor each include a conductor layer extending in a direction orthogonal to the stacking direction. The conductor layer has a first end and a second end connected to a grounding element. Compared to the second side, the second end of the conductor layer of the first inductor and the second end of the conductor layer of the third inductor are positioned closer to the first side. Compared to the first side, the second end of the conductor layer of the second inductor is positioned closer to the second side.

6. The stacked electronic device according to claim 5, characterized in that, The second portion of the second inductor is disposed between the first end and the second side of the conductor layer of the third inductor. The fourth portion of the third inductor is disposed between the first end and the first side of the conductor layer of the second inductor.

7. The stacked electronic device according to claim 1, characterized in that, It also features a fourth inductor integrated with the laminate. The fourth inductor is wound around a fourth axis orthogonal to the stacking direction and is configured to sandwich the second inductor and the third inductor between itself and the first inductor.

8. The stacked electronic device according to claim 7, characterized in that, The fourth inductor is connected to the second inductor, but not to the first inductor or the third inductor.

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