Wafer cleaning device

Abstract

The invention discloses a wafer cleaning device which comprises a base, the base can be driven to rotate through a driving part, a water spraying part is arranged in the center area of the base, the water spraying part and the base synchronously rotate so that a wafer can be cleaned, at least two sets of supporting assemblies are arranged on the base and sequentially distributed in the radial direction of the base, and the supporting assemblies are arranged on the base. According to the wafer cleaning device, the supporting assemblies are arranged, so that the different sets of supporting assemblies can support wafers of different sizes, the supporting assemblies are in linear contact with the wafers of the corresponding sizes, the contact area between the supporting assemblies and the edges of the wafers is reduced, the cleaning effect on the wafers is improved, the wafers of different sizes are cleaned through the at least two sets of supporting assemblies, and the cleaning efficiency is improved. And the applicability of the wafer cleaning device is improved.

Description

Technical Field

[0001] This application relates to the field of semiconductor processing technology, and more specifically, to a wafer cleaning apparatus. Background Technology

[0002] Silicon carbide, due to its large bandgap, high breakdown electric field, high saturated electron drift velocity, and high thermal conductivity, is widely used as an important semiconductor material in fields such as electronic devices. During the manufacturing process of silicon carbide wafers, the cleaning effect of the silicon carbide wafers affects the quality of the finished wafers. In the existing technology, in order to improve the cleaning quality of silicon carbide wafers, single-wafer cleaning of silicon carbide wafers has gradually been developed. Currently, single wafers are usually cleaned by fixing them with suction cups or clamps. However, this method has poor cleaning effect on the edges of silicon carbide wafers and is not convenient for silicon carbide wafers of different sizes.

[0003] In summary, improving the cleaning effect on silicon carbide wafers and enhancing the applicability of wafer cleaning equipment are problems that urgently need to be solved by those skilled in the art. Summary of the Invention

[0004] In view of this, the purpose of this application is to provide a wafer cleaning apparatus that improves the cleaning effect on silicon carbide wafers and enhances the applicability of the wafer cleaning apparatus.

[0005] To achieve the above objectives, this application provides the following technical solution:

[0006] A wafer cleaning apparatus for cleaning a single wafer includes: a base, wherein the base is tractively connected to a driving member to rotate the base; a water spraying member disposed in the central region of the base and rotating synchronously with the base; and a support assembly disposed on the base, comprising at least two sets of support assemblies arranged radially along the base, wherein different sets of support assemblies support wafers of different sizes, and the support assemblies are in line contact with the wafers of the corresponding sizes.

[0007] In some embodiments, the support assembly includes a 6-inch support assembly and an 8-inch support assembly; the 6-inch support assembly is used to support the 6-inch wafer, the 8-inch support assembly is used to support the 8-inch wafer, the 6-inch support assembly is closer to the water jet component than the 8-inch support assembly, and the support point of the 8-inch support assembly for the wafer is higher than the apex of the 6-inch support assembly.

[0008] In some embodiments, the 6-inch support assembly includes at least four 6-inch support columns, and the number of the 6-inch support columns is even; the at least four 6-inch support columns are symmetrically distributed along the x-axis and y-axis of the base.

[0009] In some embodiments, at least four of the 6-inch support pillars have identical structures; the 6-inch support pillar includes a first small cylinder, a first frustum, and a first large cylinder arranged sequentially from top to bottom, with the axis of the first small cylinder, the axis of the first frustum, and the axis of the first large cylinder being consistent; wherein, the inclined surface of the first frustum is used to support the edge of the wafer.

[0010] In some embodiments, the diameter of the first small cylinder is 0.6 cm, and the diameter of the first large cylinder is 1.8 cm; the longitudinal section of the first frustum is an isosceles trapezoid, the diameter of the upper surface of the first frustum is the same as the diameter of the first small cylinder, the diameter of the lower surface of the first frustum is the same as the diameter of the first large cylinder, and the height of the first frustum is 0.2 cm-0.5 cm.

[0011] In some embodiments, there are six 6-inch support columns, two of which are located on the x-axis. The x-axis and y-axis form a first quadrant, a second quadrant, a third quadrant, and a fourth quadrant. Each of the first, second, third, and fourth quadrants includes one 6-inch support column. The closest distance between the 6-inch support column located in each quadrant and the 6-inch support column located on the x-axis is L1, with L1 ranging from 3cm to 4cm. The distance between the 6-inch support columns located in the first and fourth quadrants and those located in the second and third quadrants is L2, with L2 ranging from 11cm to 12cm. The distance between the 6-inch support columns located in the first and second quadrants and those located in the third and fourth quadrants is L3, with L3 ranging from 6.8cm to 8.8cm.

[0012] In some embodiments, the 8-inch support assembly includes at least four 8-inch support columns, and the number of the 8-inch support columns is even; the at least four 8-inch support columns are symmetrically distributed along the x-axis and y-axis of the base.

[0013] In some embodiments, at least four of the 8-inch support columns have identical structures; each 8-inch support column includes a second small cylinder, a second frustum, and a second large cylinder arranged sequentially from top to bottom, wherein the second small cylinder and the second large cylinder are eccentrically arranged, and the longitudinal section of the second frustum is a right-angled trapezoid; the cross-section of the second small cylinder, the cross-section of the right-angled side of the second frustum, and the cross-section of the second large cylinder belong to the same plane; wherein the hypotenuse of the second frustum is used to support the edge of the wafer.

[0014] In some embodiments, the base is a circular structure, and the second small cylinder and the second large cylinder are both internally tangent to the edge of the base.

[0015] In some embodiments, the diameter of the second small cylinder is 0.3 cm, and the diameter of the second large cylinder is 1.3 cm; the diameter of the upper surface of the second frustum is the same as the diameter of the second small cylinder, the diameter of the lower surface of the second frustum is the same as the diameter of the second large cylinder, and the height of the second frustum is 0.2 cm-0.5 cm.

[0016] In some embodiments, there are six 8-inch support columns, two of which are located on the x-axis. The x-axis and y-axis form a first quadrant, a second quadrant, a third quadrant, and a fourth quadrant. Each of the first, second, third, and fourth quadrants includes one of the 8-inch support columns. The closest distance between the 8-inch support column located in each quadrant and the 8-inch support column located on the x-axis is L4, with L4 ranging from 5.7cm to 6.9cm. The distance between the 8-inch support columns located in the first and fourth quadrants and the 8-inch support columns located in the second and third quadrants is L5, with L5 ranging from 13cm to 14cm. The distance between the 8-inch support columns located in the first and second quadrants and the 8-inch support columns located in the third and fourth quadrants is L6, with L6 ranging from 11.6cm to 13.1cm.

[0017] In some embodiments, the water spray component includes four water spray nozzles, which are symmetrically distributed along the x-axis and y-axis of the base; the distance between adjacent water spray nozzles is 2.5cm-4cm.

[0018] In some embodiments, the support assembly is fixedly connected to the base by threaded fasteners.

[0019] The wafer cleaning apparatus provided in this application includes a base that can be rotated by a drive component. A water spray component is provided in the central area of ​​the base and rotates synchronously with the base to facilitate wafer cleaning. At least two sets of support components are provided on the base, and the at least two sets of support components are distributed sequentially along the radial direction of the base so that different sets of support components can support wafers of different sizes. The support components and the wafers of the corresponding sizes are in line contact, reducing the contact area between the support components and the edge of the wafer to improve the cleaning effect. By using at least two sets of support components to clean wafers of different sizes, the applicability of the wafer cleaning apparatus is improved. Attached Figure Description

[0020] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of this application. For those skilled in the art, other drawings can be obtained based on the provided drawings without creative effort.

[0021] Figure 1 This is a schematic diagram of the wafer cleaning apparatus provided in an embodiment of this application;

[0022] Figure 2 This is a schematic diagram of the structure of a 6-inch support column provided in an embodiment of this application;

[0023] Figure 3 This is a structural schematic diagram of an 8-inch support column provided in an embodiment of this application;

[0024] Figure 4 This is a schematic diagram of the wafer cleaning apparatus provided in this application supporting a 6-inch wafer;

[0025] Figure 5 This is a schematic diagram of the wafer cleaning apparatus provided in this application supporting an 8-inch wafer;

[0026] Figure 6 This is a schematic diagram illustrating the effect of cleaning wafer edges in existing technologies;

[0027] Figure 7 This is a schematic diagram illustrating the edge cleaning effect of the wafer cleaning apparatus provided in this application embodiment.

[0028] Explanation of reference numerals in the attached figures:

[0029] 100 - Base;

[0030] 200 - Water spray component, 210 - Water spray nozzle;

[0031] 310 - 6-inch support column, 311 - First small cylinder, 312 - First frustum, 313 - First large cylinder;

[0032] 410 - 8-inch support column, 411 - second small cylinder, 412 - second frustum, 413 - second large cylinder;

[0033] 500-chip. Detailed Implementation

[0034] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0035] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. The terminology used in the following embodiments is for the purpose of describing specific embodiments only and is not intended to be a limitation of this application. As used in the specification and appended claims of this application, the singular expressions "a," "an," "the," "the," "the," and "this" are intended to also include expressions such as "one or more," unless the context clearly indicates otherwise. It should also be understood that in the embodiments of this application, "one or more" refers to one, two, or more; "and / or" describes the relationship between related objects, indicating that three relationships may exist; for example, A and / or B can represent: A alone, A and B simultaneously, or B alone, where A and B can be singular or plural. The character " / " generally indicates that the preceding and following related objects are in an "or" relationship.

[0036] References to "one embodiment" or "some embodiments" as described in this specification mean that one or more embodiments of this application include a specific feature, structure, or characteristic described in connection with that embodiment. Therefore, the phrases "in one embodiment," "in some embodiments," "in other embodiments," "in still other embodiments," etc., appearing in different parts of this specification do not necessarily refer to the same embodiment, but rather mean "one or more, but not all, embodiments," unless otherwise specifically emphasized. The terms "comprising," "including," "having," and variations thereof mean "including but not limited to," unless otherwise specifically emphasized.

[0037] The "multiple" mentioned in the embodiments of this application refers to two or more. It should be noted that in the description of the embodiments of this application, terms such as "first" and "second" are used only for the purpose of distinguishing descriptions and should not be construed as indicating or implying relative importance, nor should they be construed as indicating or implying order.

[0038] like Figure 1As shown in the embodiment of this application, the wafer cleaning apparatus is used to clean a single wafer 500. The cleaning apparatus includes: a base 100, a driving member connected to the base 100, the driving member driving the base 100 to rotate, a water spray member 200 provided in the central area of ​​the base 100, the water spray member 200 rotating synchronously with the base 100 to facilitate cleaning the wafer 500, at least two sets of support components provided on the base 100, the at least two sets of support components being distributed sequentially along the radial direction of the base 100, different sets of support components being used to support wafers 500 of different sizes, and the support components and the corresponding size wafers 500 are in line contact to reduce the contact area between the support components and the edge of the wafer 500, thereby improving the cleaning effect on the wafer 500, and by using at least two sets of support components to clean wafers 500 of at least two sizes, the applicability of the wafer cleaning apparatus is improved.

[0039] Currently, the mainstream sizes of silicon carbide wafers are 6 inches and 8 inches, as well as 4-inch small sizes suitable for specific devices and 12-inch large sizes for cutting-edge technology research. Different sizes of silicon carbide wafers can be supported by different sets of support components, and this application does not limit this.

[0040] Since the mainstream sizes of silicon carbide wafers are 6-inch and 8-inch, this application will use 6-inch support components and 8-inch support components as examples for specific explanation.

[0041] In this application, the support components include a 6-inch support component and an 8-inch support component. The 6-inch support component is used to support a 6-inch wafer 500, and the 8-inch support component is used to support an 8-inch wafer 500. Since the diameter of the 6-inch wafer 500 is smaller than that of the 8-inch wafer 500, the 6-inch support component is located in the inner ring of the base 100 and is closer to the water spray component 200 than the 8-inch support component. As a result, when the 8-inch support component supports the 8-inch wafer 500, the 8-inch wafer 500 will cover the 6-inch support component. Therefore, the support point of the 8-inch support component for the wafer 500 is higher than the apex of the 6-inch support component to avoid interference between the wafer 500 and the support component, thereby ensuring the cleaning operation of wafers 500 of different sizes.

[0042] It should be noted that, in order to facilitate rotation and reduce the size of the base 100, the base 100 has a circular structure to facilitate the arrangement of support components, and the base 100 can be divided into the following sections: Figure 1 The x-axis and y-axis are shown to facilitate the symmetrical distribution of support columns in the support assembly.

[0043] In this application, the 6-inch support assembly includes at least four 6-inch support pillars 310, and the number of 6-inch support pillars 310 is even. The at least four 6-inch support pillars 310 are symmetrically distributed along the x-axis and y-axis of the base 100, so that the 6-inch support pillars 310 can provide uniform support force to the wafer 500, thereby improving the stability of the wafer 500 during the rotation cleaning process.

[0044] In some embodiments, the number of 6-inch support pillars 310 can be 4, 6, 8, or other numbers that can uniformly support the wafer 500. This application embodiment does not limit this number.

[0045] like Figure 2 As shown, where Figure 2 (a) is a front view of a 6-inch support column 310. Figure 2 (b) is a side view of the 6-inch support column 310. Figure 2 (c) is a top view of the 6-inch support column 310. At least four 6-inch support columns 310 have the same structural dimensions. The 6-inch support column 310 includes a first small cylinder 311, a first frustum 312, and a first large cylinder 313 distributed from top to bottom. The first frustum 312 is used to smoothly transition between the first small cylinder 311 and the first large cylinder 313. The axis of the first small cylinder 311, the axis of the first frustum 312, and the axis of the first large cylinder 313 are consistent. The inclined surface of the first frustum 312 supports the edge of the wafer 500 so that the first frustum 312 forms a line contact with the wafer 500, reducing the contact area between the first frustum 312 and the wafer 500, so as to facilitate the cleaning of the wafer 500 and improve the cleaning effect.

[0046] like Figure 4 As shown, the inclined surfaces of the six 6-inch support pillars 310 all support the 6-inch wafers 500 to achieve line contact with the wafers 500 and improve the cleaning effect.

[0047] like Figure 2 As shown, the diameter of the first small cylinder 311 is 0.6cm, the diameter of the first large cylinder 313 is 1.8cm, and the longitudinal section of the first frustum 312 is an isosceles trapezoidal structure. The diameter of the upper surface of the first frustum 312 is the same as the diameter of the first small cylinder 311, and the diameter of the lower surface of the first frustum 312 is the same as the diameter of the first large cylinder 313. The height of the first frustum 312 is 0.2cm-0.3cm, so that the slope of the first frustum 312 is 0.2-0.3. If the slope is too large, the wafer 500 will slip; if the slope is too small, the cleaning effect on the wafer 500 will be reduced. Therefore, the slope of the first frustum 312 is 0.2-0.3 to ensure stable support for the wafer 500 and the cleaning effect on the wafer 500.

[0048] It should be noted that the diameters of the first small cylinder 311 and the first large cylinder 313 can also be adjusted and selected near the provided parameters, and can be adjusted according to the actual situation. This application embodiment does not limit this.

[0049] like Figure 1 As shown, the 6-inch support assembly in this application includes six 6-inch support pillars 310, two of which are located on the x-axis. The x-axis and y-axis form the first quadrant, the second quadrant, the third quadrant, and the fourth quadrant. Each of the first quadrant, the second quadrant, the third quadrant, and the fourth quadrant includes one 6-inch support pillar 310, so as to achieve uniform and stable support for the wafer 500 through the six 6-inch support pillars 310.

[0050] like Figure 1 As shown, the closest distance between the 6-inch support column 310 located in each quadrant and the 6-inch support column 310 located on the x-axis is L1, with a range of 3cm-4cm; the distance along the x-axis between the 6-inch support column 310 located in the first and fourth quadrants and the 6-inch support column 310 located in the second and third quadrants is L2, with a range of 11cm-12cm; the distance along the y-axis between the 6-inch support column 310 located in the first and second quadrants and the 6-inch support column 310 located in the third and fourth quadrants is L3, with a range of 6.8cm-8.8cm.

[0051] By setting the spacing between the six 6-inch support pillars 310 as described above, the six 6-inch support pillars 310 correspond to the main positioning edge of the 6-inch wafer 500, while ensuring that the adjacent 6-inch support pillars 310 are equally spaced, so as to improve the stability of the wafer 500 during the rotation cleaning process.

[0052] It should be noted that the main positioning edge of a silicon carbide wafer is a straight cut edge that is artificially ground from its circular edge, which can provide a physical and directional reference for the wafer during the manufacturing process.

[0053] In this application, the 8-inch support assembly includes at least four 8-inch support pillars 410, and the number of 8-inch support pillars 410 is even. The at least four 8-inch support pillars 410 are symmetrically distributed along the x-axis and y-axis of the base 100, so that the 8-inch support pillars 410 can provide uniform support force to the wafer 500, thereby improving the stability of the wafer 500 during the rotation cleaning process.

[0054] In some embodiments, the number of 8-inch support pillars 410 can be 4, 6, 8, etc., to provide uniform support for the wafer 500. This application embodiment does not limit this.

[0055] like Figure 3 As shown, where Figure 3 (a) is a front view of an 8-inch support column 410. Figure 3 (b) is a side view of the 8-inch support column 410. Figure 3 (c) is a top view of the 8-inch support pillar 410. At least four 8-inch support pillars 410 have the same structural dimensions. The 8-inch support pillar 410 includes a second small cylinder 411, a second frustum 412, and a second large cylinder 413 distributed from top to bottom. The second small cylinder 411 and the second large cylinder 413 are eccentrically arranged, and the longitudinal section of the second frustum 412 is a right-angled trapezoidal structure, so that the cross-section of the second small cylinder 411, the cross-section of the right-angled side of the second frustum 412, and the cross-section of the second large cylinder 413 belong to the same plane. This allows the second small cylinder 411 to be located at the edge of the second large cylinder 413 and to support the edge of the wafer 500 through the inclined side of the second frustum 412. This allows the second frustum 412 to form a line contact with the wafer 500, reducing the contact area between the two, which facilitates cleaning of the wafer 500 and improves the cleaning effect.

[0056] like Figure 1 As shown, the base 100 has a circular structure. In the 8-inch support assembly, the second small cylinder 411 and the second large cylinder 413 of all the 8-inch support columns 410 are tangent to the edge of the base 100. As the size of the wafer 500 increases, the centrifugal force it experiences during rotation also increases. By setting the second small cylinder 411 at the edge of the second large cylinder 413, and ensuring that both the second small cylinder 411 and the second large cylinder 413 are tangent to the edge of the base 100, the overall size of the base 100 can be reduced as much as possible. This further improves the stability of the support for the wafer 500 during the cleaning process, thereby ensuring the quality of the wafer 500.

[0057] like Figure 3 As shown, the diameter of the second small cylinder 411 is 0.3 cm, the diameter of the second large cylinder 413 is 1.3 cm, the upper surface diameter of the second frustum 412 is the same as the diameter of the second small cylinder 411, the lower surface diameter of the second frustum 412 is the same as the diameter of the second large cylinder 413, and the height of the second frustum 412 is 0.2 cm-0.5 cm, so that the slope of the second frustum 412 is 0.2-0.5. In this embodiment, the slope of the second frustum 412 is preferably 0.2-0.3. If the slope is too large, the wafer 500 will slip; if the slope is too small, the cleaning effect on the wafer 500 will be reduced. Therefore, the slope of the second frustum 412 is 0.2-0.3 to ensure stable support for the wafer 500 and the cleaning effect on the wafer 500.

[0058] It should be noted that the diameters of the second small cylinder 411 and the second large cylinder 413 can also be adjusted and selected near the provided parameters, and can be adjusted according to the actual situation. This application embodiment does not limit this.

[0059] like Figure 1 As shown, the 8-inch support assembly in this application includes six 8-inch support pillars 410, two of which are located on the x-axis. The x-axis and y-axis form the first quadrant, the second quadrant, the third quadrant, and the fourth quadrant. Each of the first quadrant, the second quadrant, the third quadrant, and the fourth quadrant includes one 8-inch support pillar 410, so as to achieve uniform and stable support for the wafer 500 through the six 8-inch support pillars 410.

[0060] like Figure 1 As shown, the closest distance between the 8-inch support column 310 located in each quadrant and the 8-inch support column 310 located on the x-axis is L4, with L4 ranging from 5.7cm to 6.9cm; the distance along the x-axis between the 8-inch support column 410 located in the first and fourth quadrants and the 8-inch support column 410 located in the second and third quadrants is L5, with L5 ranging from 13cm to 14cm; the distance along the y-axis between the 8-inch support column 410 located in the first and second quadrants and the 8-inch support column 410 located in the third and fourth quadrants is L6, with L6 ranging from 11.6cm to 13.1cm.

[0061] By setting the spacing between the six 8-inch support pillars 410 as described above, the six 8-inch support pillars 410 correspond to the main positioning edge of the 8-inch wafer 500, while ensuring that the adjacent 8-inch support pillars 410 are equally spaced, so as to improve the stability of the wafer 500 during the rotation cleaning process.

[0062] like Figure 1 As shown, the water spray component 200 includes four water spray nozzles 210, and the four water spray nozzles 210 are symmetrically distributed along the x-axis and y-axis of the base 100. The distance between adjacent water spray nozzles 210 is 2.5cm-4cm, so that the direction of the cleaning liquid being thrown out during rotation is more uniform, thereby further improving the cleaning effect on the wafer 500.

[0063] It should be noted that in this application, each support column in the support assembly can be fixedly connected to the base 100 by threaded fasteners to improve the stability of the connection between the support assembly and the base 100.

[0064] The wafer cleaning apparatus provided in this application embodiment uses a base 100 to drive the water spray component 200 to rotate and clean a single wafer 500. It uses 6-inch and 8-inch support components to support both 6-inch and 8-inch wafers 500, enabling cleaning of both sizes and improving the applicability of the wafer cleaning apparatus. Furthermore, the 6-inch support column 310 and 8-inch support column 410 support the wafer 500 with inclined surfaces, achieving linear support for the wafer 500. This reduces the contact area between the support components and the edge of the wafer 500, improving the cleaning effect.

[0065] contrast Figure 6 and Figure 7 , Figure 6 This is a schematic diagram of the wafer 500 after cleaning in the prior art. It can be seen that there are obvious residual stains on the edges of the wafer 500. Figure 7 The wafer 500 cleaned by the wafer cleaning apparatus provided in this application embodiment has no obvious residual stains, which significantly improves the cleaning effect of the wafer 500.

[0066] The above description of the embodiments enables those skilled in the art to make or use this application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of this application. Therefore, this application is not to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A wafer cleaning apparatus for cleaning a single wafer (500), characterized in that, include: A base (100) is connected to a driving member so that the driving member drives the base (100) to rotate; A water spray component (200) is disposed in the central area of ​​the base (100), and the water spray component (200) rotates synchronously with the base (100); A support assembly is disposed on the base (100). There are at least two sets of support assemblies, which are distributed in sequence along the radial direction of the base (100). The support assemblies of different sets are used to support wafers (500) of different sizes, and there is line contact between the support assembly and the wafer (500) of the corresponding size.

2. The wafer cleaning apparatus according to claim 1, characterized in that, The support components include 6-inch support components and 8-inch support components; The 6-inch support assembly is used to support the 6-inch wafer (500), and the 8-inch support assembly is used to support the 8-inch wafer (500). The 6-inch support assembly is closer to the water spray component (200) than the 8-inch support assembly, and the support point of the 8-inch support assembly on the wafer (500) is higher than the apex of the 6-inch support assembly.

3. The wafer cleaning apparatus according to claim 2, characterized in that, The 6-inch support assembly includes at least four 6-inch support columns (310), and the number of the 6-inch support columns (310) is even. At least four of the 6-inch support columns (310) are symmetrically distributed along the x-axis and y-axis of the base (100).

4. The wafer cleaning apparatus according to claim 3, characterized in that, At least four of the aforementioned 6-inch support columns (310) have identical structures; The 6-inch support column (310) includes a first small cylinder (311), a first frustum (312), and a first large cylinder (313) arranged sequentially from top to bottom. The axis of the first small cylinder (311), the axis of the first frustum (312), and the axis of the first large cylinder (313) are consistent. The inclined surface of the first frustum (312) is used to support the edge of the wafer (500).

5. The wafer cleaning apparatus according to claim 4, characterized in that, The diameter of the first small cylinder (311) is 0.6 cm, and the diameter of the first large cylinder (313) is 1.8 cm; The longitudinal section of the first frustum (312) is an isosceles trapezoid. The diameter of the upper surface of the first frustum (312) is the same as the diameter of the first small cylinder (311). The diameter of the lower surface of the first frustum (312) is the same as the diameter of the first large cylinder (313). The height of the first frustum (312) is 0.2cm-0.5cm.

6. The wafer cleaning apparatus according to claim 3, characterized in that, There are six 6-inch support columns (310), two of which are located on the x-axis. The x-axis and y-axis form the first quadrant, the second quadrant, the third quadrant, and the fourth quadrant. Each of the first quadrant, the second quadrant, the third quadrant, and the fourth quadrant includes one of the 6-inch support columns (310). The closest distance between the 6-inch support column (310) located in each quadrant and the 6-inch support column (310) located on the x-axis is L1, and the range of L1 is 3cm-4cm. The distance between the 6-inch support column (310) located in the first quadrant and the fourth quadrant and the 6-inch support column (310) located in the second quadrant and the third quadrant is L2, and the range of L2 is 11cm-12cm. The distance between the 6-inch support column (310) located in the first and second quadrants and the 6-inch support column (310) located in the third and fourth quadrants is L3, and the range of L3 is 6.8cm-8.8cm.

7. The wafer cleaning apparatus according to claim 2, characterized in that, The 8-inch support assembly includes at least four 8-inch support columns (410), and the number of the 8-inch support columns (410) is even. At least four of the 8-inch support columns (410) are symmetrically distributed along the x-axis and y-axis of the base (100).

8. The wafer cleaning apparatus according to claim 7, characterized in that, At least four of the aforementioned 8-inch support columns (410) have identical structures; The 8-inch support column (410) includes a second small cylinder (411), a second frustum (412), and a second large cylinder (413) arranged sequentially from top to bottom. The second small cylinder (411) and the second large cylinder (413) are eccentrically arranged, and the longitudinal section of the second frustum (412) is a right trapezoid. The cross-section of the second small cylinder (411), the cross-section of the right-angled side of the second frustum (412), and the cross-section of the second large cylinder (413) belong to the same plane; The inclined side of the second frustum (412) is used to support the edge of the wafer (500).

9. The wafer cleaning apparatus according to claim 8, characterized in that, The base (100) has a circular structure, and the second small cylinder (411) and the second large cylinder (413) are both internally tangent to the edge of the base (100).

10. The wafer cleaning apparatus according to claim 8, characterized in that, The diameter of the second small cylinder (411) is 0.3 cm, and the diameter of the second large cylinder (413) is 1.3 cm; The upper surface diameter of the second frustum (412) is the same as the diameter of the second small cylinder (411), the lower surface diameter of the second frustum (412) is the same as the diameter of the second large cylinder (413), and the height of the second frustum (412) is 0.2cm-0.5cm.

11. The wafer cleaning apparatus according to claim 7, characterized in that, There are six 8-inch support columns (410), two of which are located on the x-axis. The x-axis and y-axis form the first quadrant, the second quadrant, the third quadrant, and the fourth quadrant. Each of the first quadrant, the second quadrant, the third quadrant, and the fourth quadrant includes one of the 8-inch support columns (410). The closest distance between the 8-inch support column (410) located in each quadrant and the 8-inch support column (410) located on the x-axis is L4, and the range of L4 is 5.7cm-6.9cm. The distance between the 8-inch support column (410) located in the first quadrant and the fourth quadrant and the 8-inch support column (410) located in the second quadrant and the third quadrant is L5, and the range of L5 is 13cm-14cm. The distance between the 8-inch support column (410) located in the first and second quadrants and the 8-inch support column (410) located in the third and fourth quadrants is L6, and the range of L6 is 11.6cm-13.1cm.

12. The wafer cleaning apparatus according to claim 1, characterized in that, The water spray component (200) includes four water spray nozzles (210), which are symmetrically distributed along the x-axis and y-axis of the base (100); The distance between adjacent water nozzles (210) is 2.5cm-4cm.

13. The wafer cleaning apparatus according to claim 1, characterized in that, The support assembly is fixedly connected to the base (100) by threaded fasteners.

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