Teaching jig, positioning method, and substrate processing apparatus
By using an optical inspection method with a teaching fixture, the problem of inaccurate substrate positioning in the plasma processing device was solved, achieving precise positioning of the substrate and the center of the electrostatic chuck, and improving the uniformity of the process.
Patent Information
- Application Number
- CN202510656544.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2024-08-19
- Filing Date
- 2025-05-21
- Publication Date
- 2026-03-03
AI Technical Summary
In plasma processing, it is difficult to accurately position the substrate to ensure that the center of the substrate is aligned with the center of the electrostatic chuck, resulting in uneven processing.
A teaching fixture, including a lower ring, support column, upper ring, light-transmitting module and light-receiving module, is used to optically detect the edge position of the substrate and ensure that the substrate is accurately positioned in the center of the electrostatic chuck.
This achieves accurate positioning of the substrate at the center of the electrostatic chuck, ensuring the uniformity and precision of the process.
Smart Images

Figure CN121604774A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to a teaching fixture for positioning a substrate in a plasma-based substrate processing apparatus, a method for positioning a substrate using the teaching fixture, and a substrate processing apparatus including the teaching fixture. Background Technology
[0002] Semiconductor (or display) manufacturing processes are processes used to manufacture semiconductor devices on a substrate (e.g., a wafer), including processes such as exposure, evaporation, etching, ion implantation, and cleaning. To perform these processes, cleanrooms in semiconductor manufacturing plants are equipped with semiconductor manufacturing equipment to perform the processes on the substrates that are fed into the equipment.
[0003] In semiconductor manufacturing, plasma-based processes, such as etching and vapor deposition, are widely used. Plasma processing is performed by placing a substrate in the lower part of a plasma processing space and applying an RF (radio frequency) signal through electrodes located at the upper or lower part, along with a supply of fluid for plasma processing.
[0004] For the processing, the substrate is placed in an electrostatic chuck by a substrate transfer robot. However, for a uniform process to be possible, the center of the substrate must be aligned with the center of the electrostatic chuck. Therefore, accurately determining the transfer position of the substrate to ensure it is precisely centered in the electrostatic chuck is crucial. Summary of the Invention
[0005] The present invention provides a teaching fixture that enables a substrate to be accurately positioned at the center of an electrostatic chuck in a plasma-based substrate processing apparatus, a positioning method using the teaching fixture, and a substrate processing apparatus including the teaching fixture.
[0006] The teaching fixture, used for determining the transfer position of a substrate in a plasma-utilizing substrate processing apparatus according to the present invention, comprises: a lower ring having a shape corresponding to an insulating member formed on the outside of an electrostatic chuck supporting the substrate; a plurality of support pillars extending upward from the lower ring; an upper ring supported by the support pillars and having the same shape as the lower ring; a plurality of light-transmitting modules disposed on the upper ring and configured to irradiate light downward; a plurality of light-receiving modules located below the light-transmitting modules and configured to receive light from the light-transmitting modules; and a plurality of fastening members inserted from the lower ring into fastening holes formed in the insulating member.
[0007] In an embodiment of the present invention, the position of the fastening member in the lower ring may be aligned with the position of the fastening hole formed in the insulating member.
[0008] In an embodiment of the present invention, the positions of the fastening components in the lower ring may be symmetrical about the center point of the electrostatic chuck.
[0009] In an embodiment of the present invention, the fastening component may be fastened by a thread formed in the fastening hole.
[0010] In an embodiment of the present invention, the lower ring and the upper ring may have the same size and shape as the insulating component when viewed from above.
[0011] In an embodiment of the present invention, the light-transmitting module and the light-receiving module may be configured in three units each in the upper ring and the lower ring at 120-degree intervals.
[0012] In an embodiment of the present invention, the light-transmitting module may be configured to illuminate a beam of light emitting a line aligned with the center point of the electrostatic chuck downwards, and the light-receiving module may detect the light-receiving position of a beam of light receiving a line in the beam of light emitted from the light-transmitting module.
[0013] In an embodiment of the present invention, the support column may be disposed in the lower ring in the space between the fastening component and the light-receiving module.
[0014] According to the plasma-based substrate processing apparatus of the present invention, the method for positioning a substrate using a teaching fixture includes: a step of transferring the substrate to the space between the upper ring and the lower ring using a substrate transfer robot while the fastening member of the teaching fixture is engaged with the fastening hole of the insulating member; a step of adjusting the position of the substrate so that the substrate is located at a center position respectively set in the light-receiving module; and a step of storing the position as a transfer position if the position of the substrate is aligned with the center position.
[0015] In one embodiment of the present invention, if the light-receiving position of the received line beam received in each of the light-receiving modules is consistent with the set center position, it is determined that the position of the substrate is aligned with the center position of the electrostatic chuck.
[0016] The plasma-based substrate processing apparatus according to the present invention includes: an electrostatic chuck supporting a substrate from below; an insulating member disposed on the outside of the electrostatic chuck; a teaching fixture mounted above the insulating member and provided for determining the transfer position of the substrate; and a controller electrically connected to the teaching fixture.
[0017] According to the present invention, the teaching jig can be accurately engaged with the electrostatic chuck by means of a fastening member inserted into a fastening hole in an insulating member formed on the outside of the electrostatic chuck, and the substrate can be accurately positioned at the center of the electrostatic chuck by using the teaching jig to perform positioning of the substrate. Attached Figure Description
[0018] Figure 1 The structure of a substrate processing apparatus to which the present invention can be applied is shown.
[0019] Figure 2 A substrate processing apparatus showing the state of removing the edge ring from an insulating component.
[0020] Figure 3 The electrostatic chuck and insulating components are shown as viewed from above.
[0021] Figure 4 This illustrates a substrate processing apparatus with a teaching fixture attached to an insulating component.
[0022] Figure 5 The teaching fixture is shown as viewed from above.
[0023] Figure 6 The teaching fixture is shown as viewed from the side.
[0024] Figure 7 This diagram illustrates a method for detecting the position of a substrate through a light-transmitting module and a light-receiving module.
[0025] Figure 8 This is a flowchart illustrating a method for positioning a substrate using a teaching fixture according to the present invention.
[0026] Figures 9 to 11 This diagram illustrates the process of adjusting the position of the substrate.
[0027] Figure 12 as well as Figure 13 This shows the state where the center of the substrate is aligned with the center of the electrostatic chuck.
[0028] (Explanation of reference numerals in the attached diagram)
[0029] 1: Substrate processing device
[0030] 120: Electrostatic Chuck
[0031] 140: Insulating components
[0032] 200: Teaching clamps
[0033] 210: Lower ring
[0034] 220: Support column
[0035] 230: IUD insertion
[0036] 240: Light-transmitting module
[0037] 250: Light receiving module
[0038] 260: Fastening components
[0039] 300: Controller Detailed Implementation
[0040] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings, so that those skilled in the art to which this invention pertains can readily implement it. The present invention can be implemented in various different ways and is not limited to the embodiments described herein.
[0041] To clearly illustrate the present invention, parts unrelated to the description have been omitted, and the same or similar constituent elements are marked with the same reference numerals throughout the specification.
[0042] Furthermore, in multiple embodiments, the same reference numerals are used to describe only representative embodiments of the constituent elements having the same structure, while in other embodiments only structures different from the representative embodiments are described.
[0043] In the specification as a whole, when a part is described as being "connected (or combined)" with other parts, it includes not only the case of "direct connection (or combination)" but also the case of "indirect connection (or combination)" where other components are placed in between. Furthermore, when a part is described as "including" a constituent element, unless otherwise stated otherwise, it means that other constituent elements may be included, rather than excluding them.
[0044] Unless otherwise defined, all terms used herein, including technical or scientific terms, shall have the same meaning as commonly understood by one of ordinary knowledge in the art to which this invention pertains. Terms such as those defined in commonly used dictionaries shall be interpreted as having the same meaning as in the relevant technical context, and shall not be ideally or excessively interpreted as having a formal meaning unless expressly defined in this application.
[0045] The substrate processing apparatus 1 of this embodiment can be used to perform processes on substrates such as semiconductor wafers or flat panel display panels. In particular, the substrate processing apparatus 1 of this embodiment is an apparatus that performs etching or vapor deposition processes on substrates using plasma.
[0046] Figure 1A simplified structure of a substrate processing apparatus 1 according to the present invention is shown. The plasma-utilizing substrate processing apparatus 1 according to the present invention includes a cavity 10 forming a plasma processing space PZ for a substrate W, an electrostatic chuck 120 located at the lower part of the cavity 10 and supporting the substrate from below, and an insulating member 140 disposed on the outside of the electrostatic chuck 120. The substrate processing apparatus 1 includes an RF power supply 30 that supplies power for generating plasma in the processing space PZ to a substrate 115 of the electrostatic chuck 120. The substrate processing apparatus 1 includes an impedance matching circuit 31 connected to the RF power supply 30 via an RF cable 33. The substrate processing apparatus 1 includes an edge ring 130 disposed above the insulating member 140. The substrate processing apparatus 1 includes a cluster tool controller 50 for controlling the RF power supply 30.
[0047] The cavity 10 provides a plasma processing space PZ for the substrate W, and components for plasma processing are disposed inside the cavity 10. An upper electrode 35 and a gas supply component are disposed at the upper part of the cavity 10, and an electrostatic chuck 120 is disposed at the lower part of the cavity 10. A plate for separating the upper space containing the upper electrode 35 and the plasma processing space PZ can be disposed at the upper part of the cavity 10. The upper electrode 35 can be grounded. The upper electrode 35 can be a nozzle that dispenses and supplies processing gas to the processing space PZ. Alternatively, a gas supply source 40 can supply processing gas to the upper electrode 35, and the processing gas is supplied to the processing space PZ through the upper electrode 35. Although in Figure 1 Not shown, but a door is formed in the cavity 10 that allows the substrate W to move.
[0048] A substrate support assembly 20 is provided at the lower part of the processing space PZ. The substrate support assembly 20 may include an electrostatic chuck 120, an edge ring 130, and an insulating member 140. The electrostatic chuck 120 is located at the lower part of the cavity 10 and supports the substrate W using electrostatic force. An electrode 112 for using electrostatic force to press the substrate W tightly against the electrostatic chuck 120 can be provided inside the electrostatic chuck 120. The electrostatic chuck 120 can function as a lower electrode for generating plasma. A fastening hole 140H for connecting the insulating member 140 and the edge ring 130 is formed in the insulating member 140. A fastening bolt BT1 passes through the edge ring 130 to engage with the fastening hole 140H in the insulating member 140. The edge ring 130 can be engaged with the insulating member 140 through the fastening bolt BT1.
[0049] The electrostatic chuck 120 includes a ceramic pad 110 on which a substrate W for plasma processing is placed and a heater 114 is built inside, and a base plate 115 supporting the lower part of the ceramic pad 110 and having a cooling flow path 122 formed inside for a fluid to flow for cooling.
[0050] The ceramic pad 110 is a structure that supports the substrate W from below, and electrodes 112 and heaters 114 are formed inside it. The ceramic pad 110 may be made of ceramic material (e.g., quartz).
[0051] The substrate 115 is provided in the shape of a disk made of a metal (e.g., Al). The substrate 115 may consist of a lower region having a certain diameter and an upper region having a smaller diameter than the lower region. A cooling flow path 122 may be formed in the lower region of the substrate 115. The upper region of the substrate 115 may be coupled to a ceramic pad 110. That is, the substrate 115 may have a shape with a protruding lower region. Although not shown, an edge ring 130 for plasma control of the edge portion of the substrate W may be provided above the protruding portion of the substrate 115.
[0052] A coating composed of aluminum oxide (Al2O3) can be formed on the outer surface of the substrate 115. The coating prevents the substrate 115, made of metal (e.g., Al), from being exposed to the external environment, especially plasma. In addition, a bonding layer is formed between the ceramic pad 110 and the substrate 115 to bond the ceramic pad 110 and the substrate 115 together.
[0053] RF power supply 30 applies power to the base plate 115 of the electrostatic chuck 120 corresponding to the lower electrode. Such RF power supply 30 can provide for controlling plasma characteristics. RF power supply 30 can provide for adjusting, for example, ion bombardment energy. Figure 1 In the diagram, RF power supply 30 is shown connected to the lower electrode, but RF power supply 30 can be connected to both the upper electrode 35 and the substrate support assembly 20. Alternatively, the upper power supply connected to the upper electrode 35 and the lower power supply connected to the substrate support assembly 20 can be configured separately. Furthermore, the upper power supply can include multiple power supplies, and the lower power supply can include multiple power supplies. When multiple upper power supplies are provided, a matching network electrically connected to the multiple upper power supplies can be provided in the substrate processing apparatus 1. The matching network can match the different magnitudes of frequency power input from each upper and lower power supply to apply to the upper electrode 35 and the substrate support assembly 20. On the other hand, an impedance matching circuit 31 can be provided between the RF power supply 30 and the substrate 115 for impedance matching purposes. An RF cable 33 is provided for electrically connecting the RF power supply 30 and the impedance matching circuit 31. A cluster tool controller 50 can control the output of the RF power supply 30. The cluster tool controller 50 is a control device including one or more processors and memories.
[0054] The upper electrode 35 generates plasma from the gas remaining in the plasma processing space PZ. Here, the plasma processing space PZ refers to the space above the substrate support assembly 20 within the interior space of the cavity 10. The upper electrode 35 can generate plasma using either inductively coupled plasma or capacitively coupled plasma methods. The upper electrode 35 can be grounded. Alternatively, an upper RF power supply can be connected to the upper electrode 35, and an electromagnetic field can be generated from the power supplied by the upper RF power supply. An impedance matching circuit 31 for impedance matching can be configured between the upper electrode 35 and the RF power supply 30.
[0055] The gas supply source 40 uses the etching gas used to process the substrate W as the processing gas supply. Such a gas supply source 40 can supply the upper electrode 35 with a gas containing fluorine (e.g., a gas including SF6 and CF4) as the etching gas.
[0056] As a gas supply unit, the upper electrode 35 can be positioned at the upper part of the cavity 10, facing the substrate support assembly 20 in the vertical direction Z. Such a gas supply unit can be provided with multiple gas injection holes to inject gas into the cavity 10. The gas supply unit can be provided with a diameter larger than that of the substrate support assembly 20 in the horizontal direction X. The gas supply unit can be a nozzle including multiple gas injection holes. Alternatively, the gas supply unit can be a structure having one or more gas supply nozzles.
[0057] The present invention provides a method for determining the transfer position of a substrate W so that the substrate W can be accurately located at the center of an electrostatic chuck 120. Figure 2 This illustrates a substrate processing apparatus in which the edge ring 130 has been removed from the insulating component 140. (Example) Figure 2 As shown, if the fastening bolt BT1 is removed, the edge ring 130 can be separated from the insulating part 140.
[0058] Figure 3 The electrostatic chuck 120 and insulating component 140 are shown as viewed from above. (Reference) Figure 3 An insulating component 140 is provided on the outer side of the ceramic pad 110 of the circular electrostatic chuck 120. For example... Figure 2 As shown, if the fastening bolt BT1 is removed and the edge ring 130 is removed from the insulating part 140, then as Figure 3 As shown, the fastening hole 140H of the insulating component 140 is exposed. (As indicated...) Figure 2As shown, a teaching fixture for positioning the substrate W is provided on the insulating member 140 at the location where the edge ring 130 is removed, using fastening holes 140H. The fastening holes 140H can be arranged at certain intervals in the insulating member 140. (Reference) Figure 3 Fastening holes 140H are formed at the 12 o'clock, 1 o'clock, 2 o'clock, 3 o'clock, 4 o'clock, 5 o'clock, 6 o'clock, 7 o'clock, 8 o'clock, 9 o'clock, 10 o'clock, and 11 o'clock positions, respectively. Unlike the illustration, the insulating component 140 can be integrally formed with the ceramic pad 110, and the fastening holes 140H can be implemented in the ceramic pad 110. (Reference) Figure 3 A door 15 is provided inside the cavity near the electrostatic chuck 120, through which the substrate W can pass.
[0059] Figure 4 The diagram shows a substrate processing apparatus 1 with a teaching fixture 200 attached to an insulating component 140. (Reference) Figure 4 The teaching pendant 200 can be placed above the insulating member 140, and the teaching pendant 200 can be used to teach the transfer position of the substrate W so that the substrate W can be located at the center of the electrostatic chuck 120. In addition, the teaching pendant 200 is electrically connected to the controller 300. The controller 300 can confirm the current position of the substrate W based on the signal provided from the teaching pendant 200. The controller 300 is a device for controlling the overall operation of the substrate processing apparatus 1. The controller 300 may include a processor for controlling the operation of the substrate processing apparatus 1 and a memory for storing control-related information.
[0060] Figure 5 The teaching fixture 200 is shown as viewed from above. Figure 6 The teaching jig 200 is shown as viewed from the side. In the plasma-based substrate processing apparatus 1, the teaching jig 200 for determining the transfer position of the substrate W includes a lower ring 210 having a shape corresponding to an insulating member 140 formed on the outside of an electrostatic chuck 120 supporting the substrate W; a plurality of support posts 220 extending upward (in the Z direction) from the lower ring 210; an upper ring 230 supported by the support posts 220 and having the same shape as the lower ring 210; a plurality of light-transmitting modules 240 disposed on the upper ring 230 and configured to irradiate light downward; a plurality of light-receiving modules 250 located below the light-transmitting modules 240 and configured to receive light from the light-transmitting modules 240; and a plurality of fastening members 260 inserted from the lower ring 210 into fastening holes 140H formed in the insulating member 140.
[0061] According to this embodiment, the fastening member 260 of the teaching gripper 200 is engaged with the fastening hole 140H of the insulating member 140, and the teaching gripper 200 can be accurately positioned on the outside of the electrostatic chuck 120. With the teaching gripper 200 engaged with the insulating member 140, the substrate transfer robot TR (see reference) can then operate the device. Figure 10The substrate W enters the internal space of the teaching fixture 200. The edge position of the substrate W is specified by the light-transmitting module 240 and the light-receiving module 250 of the teaching fixture 200. If the substrate W is aligned with the center position of the electrostatic chuck 120, the aligned position can be determined as the transfer position of the substrate W.
[0062] The lower ring 210 may have the same shape (size and pattern) as the upper part of the insulating member 140. The fastening member 260 in the lower ring 210 is positioned aligned with the fastening hole 140H formed in the insulating member 140. For example... Figure 5 As shown, a fastening member 260 may be provided on the insulating member 140 at a position aligned with a fastening hole 140H formed at a certain interval. The fastening member 260 may be a bolt fixed to the lower ring 210.
[0063] The fastening components 260 in the lower ring 210 are positioned symmetrically with respect to the center point CP of the electrostatic chuck 120. (Reference) Figure 5 In the lower ring 210, four fastening members 260 are arranged symmetrically at points 1, 5, 7, and 11, symmetrically from the center point CP of the electrostatic chuck 120. By arranging the fastening members 260 in symmetrical positions in the lower ring 210, the teaching jig 200 can be stably fixed to the insulating member 140. The fastening members 260 can be fastened by threads formed in the fastening holes 140H formed in the insulating member 140. That is, the fastening bolts BT1 used for engaging the edge ring 130 can be removed, and the teaching jig 200 can be engaged with the insulating member 140 via the fastening members 260.
[0064] The support column 220 is a structure that extends upward from multiple points on the lower ring 210. For example... Figure 5 As shown, the support post 220 can be positioned within the insulating component 140 at the locations of the fastening holes 140H, specifically at the 3, 4, 8, and 9 o'clock positions. The support post 220 can also be positioned within the lower ring 210 in the space between the light-receiving module 250 and the fastening component 260. (Reference) Figure 6 The lower ring 210 and upper ring 230 of the support column 220 can be fixedly connected at a certain interval.
[0065] When viewed from above, the lower ring 210 and the upper ring 230 may have the same size and shape as the insulating member 140. The lower ring 210 and the upper ring 230, having the same shape as the insulating member 140, are disposed with respect to the support post 220. When viewed from above, the lower ring 210 and the upper ring 230 overlap each other.
[0066] The light-transmitting module 240 and the light-receiving module 250 are provided for detecting the edge position of the substrate W. The light-transmitting module 240 and the light-receiving module 250 can be arranged as a group to detect the position of an object. Three light-transmitting modules 240 and three light-receiving modules 250 can be arranged at 120-degree intervals in the upper ring 230 and the lower ring 210, respectively. The three light-transmitting modules 240 are arranged at 120-degree intervals in the upper ring 230, and the three light-receiving modules 250 are arranged at 120-degree intervals in the lower ring 210. Figure 5 As shown, a light-transmitting module 240 and a light-receiving module 250 are respectively arranged at the 2 o'clock, 6 o'clock, and 10 o'clock positions. When viewed from above, the light-transmitting module 240 and the light-receiving module 250 are arranged overlapping each other. (Reference) Figure 6 Alternatively, a light-transmitting module 240 can be provided in the upper ring 230 to irradiate laser light downwards, and a light-receiving module 250 can be provided in the lower ring 210 to receive the laser light irradiated from the light-transmitting module 240. The scope of this invention is not limited to such... Figure 6 The case shown is that the light-transmitting module 240 is set above and the light-receiving module 250 is set below. Conversely, the light-transmitting module 240 can be located in the lower ring 210 and the light-receiving module 250 can be located in the upper ring 230.
[0067] Figure 7 This diagram illustrates a method for detecting the position of the substrate W through the light-transmitting module 240 and the light-receiving module 250. (See diagram for example.) Figure 7 As shown in (a), the light-transmitting module 240 is configured to illuminate the emitted line beam L1, aligned with the center point CP of the electrostatic chuck 120, downwards. The light-receiving module 250 detects the light-receiving position of the received line beam L2 within the emitted line beam L1, which is received in the light-receiving module 250. Multiple laser sources capable of emitting lasers in the light-transmitting module 240 can be arranged in a row. Multiple photodetectors capable of receiving lasers in the light-receiving module 250 can be arranged in a row. The emitted line beam L1 illuminated by the light-transmitting module 240 can extend in a direction aligned with the center point of the electrostatic chuck 120. Furthermore, the received line beam L2 detected by the light-receiving module 250 can also extend in a direction aligned with the center point of the electrostatic chuck 120.
[0068] refer to Figure 7 (b) A light-receiving signal is generated based on the intensity of light received in the light-receiving module 250. The light-receiving signal indicates the light intensity at the location of each light-receiving module 250. The light-receiving signals detected by the light-receiving modules 250 are provided to the controller 300. The controller 300 can detect the position of the substrate W based on the light-receiving signals measured in each light-receiving module 250. Figure 7 As shown in (b), the detection point of the substrate W corresponding to the center position of the electrostatic chuck 120 of each light-receiving module 250 can be preset.
[0069] Figure 8 This is a flowchart illustrating a method for positioning a substrate W using a teaching gripper 200 according to the present invention. The method for positioning the substrate W according to the present invention can be performed in the initial steps of setting up the substrate processing apparatus 1 or after intermediate maintenance. The method for positioning the substrate W is for use by a substrate transfer robot TR (see reference 120) that places the substrate W in the electrostatic chuck 120. Figure 10 The transfer position of substrate W is determined and executed. If the transfer position of substrate W is determined, the transfer position can be set to the same position for substrate W to be processed subsequently. In this invention, substrate W can be not only a substrate for which actual process processing is performed, but also a clamp-type substrate with the same shape as a substrate. The substrate W positioning method of this invention can be implemented by controller 300.
[0070] The method for positioning the substrate W according to the present invention may include: with the fastening member 260 of the teaching fixture 200 engaged with the fastening hole 140H of the insulating member 140, using the substrate transfer robot TR (refer to...) Figure 10 The steps are as follows: S810, which involves moving the substrate W into the space between the upper ring 230 and the lower ring 210; S820, which involves adjusting the position of the substrate W so that the substrate W is located at the center position set in the light receiving module 250; and S830, which involves storing the aligned position as the transfer position if the position of the substrate W is aligned with the center position.
[0071] In step S810, with the fastening member 260 of the teaching fixture 200 engaged with the fastening hole 140H of the insulating member 140, the substrate transfer robot TR (refer to...) is used... Figure 10 The substrate W is moved to the space between the upper ring 230 and the lower ring 210. (As shown) Figure 4 As shown, if the teaching fixture 200 is mounted on the insulating component 140, the substrate transfer robot TR (refer to...) Figure 10 The substrate W is moved into the space between the upper ring 230 and the lower ring 210.
[0072] Figures 9 to 11 This diagram illustrates the process of adjusting the position of the substrate. (Reference) Figure 9 as well as Figure 10 The substrate W, supported by the substrate transfer robot TR, enters the space between the upper ring 230 and the lower ring 210. At this time, as... Figure 9 As shown, the position of the substrate W may be misaligned with the center of the electrostatic chuck 120.
[0073] In this case, such as Figure 11As shown in (a), the light-transmitting module 240 illuminates the emitted line beam L1 downwards. A portion of the emitted line beam L1 is blocked by the substrate W, while the remainder illuminates the light-receiving module 250. The light-receiving module 250 can generate a light-receiving module 250 by detecting the received line beam L2. Figure 11 The light signal shown in (b) is as follows. At this time, if the substrate W is not aligned with the center of the electrostatic chuck 120, then... Figure 11 As shown in (b), the position of the substrate W detected by the light signal is not the same as the center position.
[0074] The controller 300 can use the light-receiving signals generated by each of the multiple light-receiving modules 250 to confirm the current position (center point coordinates) of the substrate W. The controller 300 can specify the center point position of the substrate W by measuring the three edge positions of the substrate W by the multiple light-receiving modules 250. The controller 300 can adjust the position of the substrate W so that the measured center point position of the substrate W is consistent with the center point CP of the electrostatic chuck 120. The controller 300 can control the substrate transfer robot TR to make the center point position of the substrate W consistent with the center point CP of the electrostatic chuck 120.
[0075] Figure 12 as well as Figure 13 This shows the state where the substrate W is aligned with the center of the electrostatic chuck 120. For example... Figure 12 As shown, the center of the substrate W can coincide with the center point CP of the electrostatic chuck 120. In this case, as Figure 13 (a) and Figure 13 As shown in (b), a light-receiving signal is generated by identifying the position of the received line beam L2 detected in the light-receiving module 250 within the emitted line beam L1 irradiated from the light-transmitting module 240. If the light-receiving signal shows a rapidly changing portion, indicating that the edge position of the substrate W is aligned with the center position, it is determined that the substrate W is aligned with the center position of the electrostatic chuck 120. If the light-receiving position of the received line beam L2 received in each light-receiving module 250 is consistent with the set center position, it is determined that the position of the substrate W is aligned with the center position of the electrostatic chuck 120. When the edge position of the substrate W detected in all three light-receiving modules 250 is consistent with the center position, the controller 300 determines that the current position of the substrate W is aligned with the center position of the electrostatic chuck 120. At this time, the controller 300 can store the current position of the substrate W as the transfer position of the substrate W. Later, the controller 300 can control the substrate transfer robot TR to transfer other substrates to the stored transfer positions.
[0076] This embodiment and the accompanying drawings are merely illustrative of a portion of the technical concept included in this invention. It is obvious that variations and specific embodiments that can be readily derived by those skilled in the art within the scope of the technical concept included in the specification and drawings of this invention are all included within the scope of the claims of this invention.
[0077] Therefore, the concept of the present invention should not be limited to the illustrated embodiments, not only to the appended claims, but also to any equivalent or modified versions thereof.
Claims
1. A teaching fixture for determining the transfer position of a substrate in a plasma-utilizing substrate processing apparatus, wherein, The teaching fixture includes: The lower ring has a shape corresponding to the insulating member formed on the outside of the electrostatic chuck supporting the substrate; Multiple support columns extend upward from the lower ring; The upper ring is supported by the support column and has the same shape as the lower ring; Multiple light-transmitting modules are disposed on the upper ring and configured to irradiate light downwards; Multiple light-receiving modules are located below the light-transmitting module and configured to receive light from the light-transmitting module; and Multiple fastening components are inserted from the lower ring into fastening holes formed in the insulating component.
2. The teaching fixture according to claim 1, wherein, The position of the fastening component in the lower ring is aligned with the position of the fastening hole formed in the insulating component.
3. The teaching fixture according to claim 1, wherein, The fastening components are positioned symmetrically with respect to the center point of the electrostatic chuck in the lower ring.
4. The teaching fixture according to claim 1, wherein, The fastening component is fastened by the thread formed in the fastening hole.
5. The teaching fixture according to claim 1, wherein, When viewed from above, the lower ring and the upper ring have the same size and shape as the insulating component.
6. The teaching fixture according to claim 1, wherein, The light-transmitting module and the light-receiving module are each arranged in three units at 120-degree intervals in the upper ring and the lower ring, respectively.
7. The teaching fixture according to claim 1, wherein, The light-transmitting module is configured to project a beam of light, aligned with the center point of the electrostatic chuck, downwards. The light-receiving module detects the light-receiving position of the received line beam in the emitted line beam.
8. The teaching fixture according to claim 1, wherein, The support column is disposed in the lower ring in the space between the fastening component and the light-receiving module.
9. A method for positioning a substrate, comprising using a teaching fixture in a plasma-based substrate processing apparatus, wherein, The teaching fixture includes: The lower ring has a shape corresponding to the insulating member formed on the outside of the electrostatic chuck supporting the substrate; Multiple support columns extend upward from the lower ring; The upper ring is supported by the support column and has the same shape as the lower ring; Multiple light-transmitting modules are disposed on the upper ring and configured to irradiate light downwards; Multiple light-receiving modules are located below the light-transmitting module and configured to receive light from the light-transmitting module; and Multiple fastening components are inserted from the lower ring into fastening holes formed in the insulating component. The method for positioning the substrate includes: With the fastening component of the teaching fixture engaged in the fastening hole of the insulating component, the step of using a substrate transfer robot to transfer the substrate into the space between the upper ring and the lower ring; The steps of adjusting the position of the substrate to place the substrate at the center position respectively set in the light-receiving module; and If the position of the substrate is aligned with the center position, then the position is stored as the transfer position.
10. The positioning method according to claim 9, wherein, The fastening component is fastened by the thread formed in the fastening hole.
11. The positioning method according to claim 9, wherein, The light-transmitting module and the light-receiving module are each arranged in three units at 120-degree intervals in the upper ring and the lower ring, respectively.
12. The positioning method according to claim 9, wherein, The light-transmitting module is configured to project a beam of light, aligned with the center point of the electrostatic chuck, downwards. The light-receiving module detects the light-receiving position of the received line beam in the emitted line beam.
13. The positioning method according to claim 12, wherein, If the light-receiving position of the received line beam in each of the light-receiving modules is consistent with the set center position, it is determined that the position of the substrate is aligned with the center position of the electrostatic chuck.
14. A substrate processing apparatus utilizing plasma, wherein, The substrate processing apparatus includes: An electrostatic chuck supports the substrate from below. An insulating component is disposed on the outside of the electrostatic chuck; A teaching fixture, mounted above the insulating member and provided for determining the transfer position of the substrate; and The controller is electrically connected to the teaching fixture. The teaching fixture includes: The lower ring has a shape corresponding to the insulating component; Multiple support columns extend upward from the lower ring; The upper ring is supported by the support column and has the same shape as the lower ring; Multiple light-transmitting modules are disposed on the upper ring and configured to irradiate light downwards; Multiple light-receiving modules are located below the light-transmitting module and configured to receive light from the light-transmitting module; and The fastening component is inserted from the lower ring into a fastening hole formed in the insulating component. The controller is configured to perform the following steps: With the fastening component of the teaching fixture engaged in the fastening hole of the electrostatic chuck, the substrate is transferred to the space between the upper ring and the lower ring using a substrate transfer robot. The steps of adjusting the position of the substrate to place the substrate at the center position respectively set in the light-receiving module; and If the position of the substrate is aligned with the center position, then the position is stored as the transfer position.
15. The substrate processing apparatus according to claim 14, wherein, The position of the fastening component in the lower ring is aligned with the position of the fastening hole formed in the insulating component.
16. The substrate processing apparatus according to claim 14, wherein, The fastening components are positioned symmetrically with respect to the center point of the electrostatic chuck in the lower ring.
17. The substrate processing apparatus according to claim 14, wherein, The fastening component is fastened by the thread formed in the fastening hole.
18. The substrate processing apparatus according to claim 14, wherein, When viewed from above, the lower ring and the upper ring have the same size and shape as the insulating component.
19. The substrate processing apparatus according to claim 14, wherein, The light-transmitting module and the light-receiving module are each arranged in three units at 120-degree intervals in the upper ring and the lower ring, respectively.
20. The substrate processing apparatus according to claim 14, wherein, The light-transmitting module is configured to project a beam of light, aligned with the center point of the electrostatic chuck, downwards. The light-receiving module detects the light-receiving position of the received line beam in the emitted line beam.