Fluid system, semiconductor processing system including the same, and flow control method

Abstract

A fluid system includes a conduit, a concentration sensor coupled to the conduit, and a processor. The processor is configured to communicate with the concentration sensor and, in response to the instructions recorded on the memory to receive the concentration control selection, further receive a signal indicative of a concentration of a fluid component entrained in a fluid-carrier in the fluid delivered by the conduit, and determine the concentration of the fluid component. When the concentration differs from a predetermined concentration value by more than a predetermined concentration difference, the concentration of the fluid component is controlled based on the concentration control selection by adjusting one of (a) a mass flow rate of the fluid, (b) a pressure of the fluid component-carrier, and (c) a mass flow rate of the fluid and the pressure of the fluid component-carrier. Semiconductor processing systems, flow control methods, and related computer program products are also described.

Description

Technical Field

[0001] This disclosure relates generally to fluid systems, and more specifically to controlling fluid flow in fluid systems. Background Technology

[0002] Fluid systems are typically used to transfer fluids between a fluid source and a fluid destination, such as precursors used in gas-phase reactors to deposit material layers onto a substrate. Flow control devices, such as metering valves, are commonly used. Metering valves typically control fluid inflow by varying the effective flow area through the fluid system, for example, by moving a valve member within a range of motion where the effective flow area can be controlled with sufficient precision to control fluid flow. In some fluid systems, the range within the flow control device is precise and may be too small relative to the flow rate requirements of the fluid destination. In such systems, the fluid system may constrain the fluid destination, for example, by limiting the throughput or velocity of the gas-phase reactor served by the fluid system. While constraining the flow rate through the fluid system according to the precision of the flow control device is generally acceptable within a range that ensures the accuracy of the fluid flow rate through the fluid system, this can increase the ownership cost of the gas-phase reactor.

[0003] Such systems and methods are generally considered suitable for their intended purpose. However, there is still a need in the art for improved fluid systems, semiconductor processing systems, flow control methods, and related computer program products. This disclosure provides solutions to this need. Summary of the Invention

[0004] A fluid system is provided. The fluid system includes a conduit, a concentration sensor coupled to the conduit, and a processor. The processor is configured to communicate with the concentration sensor and, in response to instructions recorded in a memory, to receive a concentration control selection, further receive a signal indicating the concentration of a fluid component in a fluid-carrier carried in a fluid delivered by the conduit, and determine the concentration of the fluid component. When the concentration differs from a predetermined concentration value by more than a predetermined concentration difference, the concentration of the fluid component is controlled based on the concentration control selection by adjusting (a) the mass flow rate of the fluid, (b) the pressure of the fluid component-carrier, and (c) one of the mass flow rate of the fluid and the pressure of the fluid component-carrier.

[0005] In addition to one or more of the features described above, or as an alternative, other examples of fluid systems may include a concentration sensor comprising an acoustic transmitter coupled to a conduit. An acoustic receiver may be acoustically coupled to the transmitter via a conduit. In some embodiments, the fluid system includes an acoustic transmitter coupled to a conduit, and an acoustic receiver coupled to the transmitter via a conduit.

[0006] In addition to one or more of the features described above, or as an alternative, another example of a fluid system may include an illuminator coupled to a conduit. A detector may be optically coupled to the illuminator via a conduit, for example.

[0007] In addition to one or more of the features described above, or as an alternative, other examples of fluid systems may include a liquid container fluidly connected to a concentration sensor, a pressure control device fluidly connected to the liquid container and thus fluidly connected to the concentration sensor, and a mass flow control device fluidly connected to the concentration sensor and thus fluidly connected to the pressure control device via the liquid container.

[0008] In addition to one or more of the features described above, or as an alternative, other examples of fluid systems may include concentration sensors operatively coupled to pressure control devices and mass flow control devices.

[0009] In addition to one or more of the features described above, or alternatively, other examples of the fluid system may include a liquid material layer precursor contained in a liquid container and a carrier source, the carrier source including a carrier fluid fluidly connected to the liquid container via a pressure control device. The liquid material layer precursor may include a silicon-containing material layer precursor, a germanium-containing material layer precursor, or a dopant-containing material layer precursor. The carrier source may include hydrogen (H2), nitrogen (N2), a rare gas, or a mixture of one or more of the aforementioned gases. The carrier source may be further configured to deliver a carrier fluid stream to the liquid container to evaporate the liquid material layer precursor contained in the liquid container.

[0010] In addition to one or more of the features described above, or as an alternative, another example of a fluid system may include a gas-phase reactor with a single-wafer crossflow architecture, which is coupled to a mass flow control device and thereby coupled to a pressure control device via a concentration sensor and a liquid container.

[0011] In addition to one or more of the features described above, or as an alternative, other examples of fluid systems may include wired or wireless links that connect concentration sensors to pressure control devices and mass flow control devices.

[0012] In addition to one or more of the features described above, or alternatively, another example of a fluid system may include a mass flow control device to which the fluid is coupled to a concentration sensor. Instructions recorded in memory may also cause the processor to compare the determined concentration with a predetermined concentration value, and, when the received concentration control selection is (a) the mass flow rate of the fluid, adjust the mass flow rate of the fluid delivered by the conduit when the determined concentration differs from the predetermined concentration value by more than a predetermined concentration difference.

[0013] In addition to one or more of the features described above, or as an alternative, other examples of fluid systems may include regulating the mass flow rate of a fluid by using concentration to determine a mass flow setpoint and transmitting the mass flow setpoint to a mass flow control device.

[0014] In addition to one or more of the features described above, or alternatively, another example of a fluid system may include a pressure control device fluidly coupled to a concentration sensor. Instructions recorded in memory may further instruct the processor to compare the concentration with a predetermined concentration value, and, when the received concentration control selection is (b) the pressure of the fluid component-carrier, to adjust the pressure of the fluid component-carrier when the concentration differs from the predetermined concentration value by more than a predetermined concentration difference.

[0015] In addition to one or more of the features described above, or as an alternative, other examples of fluid systems may include regulating the pressure of a fluid component-carrier by using concentration to determine a pressure setpoint and transmitting the pressure setpoint to a pressure control device.

[0016] In addition to one or more of the features described above, or as an alternative, other examples of a fluid system may include a pressure control device fluidly connected to a concentration sensor and a mass flow device fluidly connected to the pressure control device via the concentration sensor. Instructions recorded in memory further instruct the processor to: compare the concentration with a predetermined concentration value; when the received concentration control selection is (c) the mass flow rate of the fluid and the pressure of the fluid component-carrier, adjust both the mass flow rate of the fluid and the pressure of the fluid component-carrier when the difference between the concentration and the predetermined concentration value is greater than a predetermined concentration difference.

[0017] In addition to one or more of the features described above, or alternatively, other examples of fluid systems may include regulating the mass flow rate of the fluid and the pressure of the fluid composition-carrier, both of which involve using concentration to determine a series mass flow rate setpoint and a series pressure setpoint. The series mass flow rate setpoint may be transmitted to a mass flow control device, and the series pressure control setpoint may be transmitted to a pressure control device.

[0018] In addition to one or more of the features described above, or as an alternative, another example of a fluid system may include a concentration control housing that surrounds the processor and the concentration sensor.

[0019] In addition to one or more of the features described above, or as an alternative, other examples of fluid systems may include a concentration control housing surrounding a concentration sensor and a wired or wireless link connected to the concentration sensor, which connects the concentration sensor to a processor.

[0020] In addition to one or more of the features described above, or as an alternative, other examples of the fluid system may include a concentration control device housing surrounding a concentration sensor. A gas phase reactor may be coupled to a conduit. A system controller, including a processor, may be coupled to the gas phase reactor. A wired or wireless link may couple the processor to the concentration control device housing surrounding the concentration sensor and thereby to the concentration sensor.

[0021] In addition to one or more of the features described above, or as an alternative, other examples of fluid systems may include a wired or wireless link coupled to a concentration sensor. A mass flow control device housing or a pressure control device housing may enclose the processor. The mass flow control device housing or pressure control device housing may couple the processor to the concentration sensor.

[0022] A semiconductor processing system is provided. The semiconductor processing system includes a fluid system as described above, further comprising a liquid container fluidly connected to a conduit and a liquid silicon-containing material layer precursor contained within the liquid container. A gas-phase reactor is connected to the conduit, an exhaust source is connected to the gas-phase reactor and thereby to the fluid system, and a system controller including a processor is operatively connected to the gas-phase reactor.

[0023] A flow control method is provided. The flow control method includes, at a fluid system as described above, receiving at a processor a concentration control selection, receiving at the processor a signal indicating the concentration of a fluid component in a fluid-carrier entrained in a fluid transported by a conduit, and determining the concentration of the fluid component using the processor. When the determined concentration differs from a predetermined concentration value by more than a predetermined concentration difference, based on the concentration control selection, the concentration of the fluid component transported by the conduit is controlled by adjusting (a) the mass flow rate of the fluid, (b) the pressure of the fluid component-carrier, and (c) one of the mass flow rate of the fluid and the pressure of the fluid component-carrier.

[0024] In addition to one or more of the features described above, or as an alternative, other examples of the method may include: the fluid composition comprising an evaporated liquid silicon-containing material layer precursor, an evaporated liquid germanium-containing material layer precursor, and / or an evaporated liquid dopant-containing material layer precursor.

[0025] In addition to one or more of the features described above, or as an alternative, another example of the method may include: the fluid composition comprising an evaporated liquid material layer precursor. The method may also include conveying the fluid to a gas-phase reactor via a conduit and depositing a material layer onto a substrate supported in the gas-phase reactor using an epitaxial deposition technique with the evaporated liquid material layer precursor.

[0026] A computer program product is provided. The computer program product includes a non-transitory machine-readable medium having a plurality of program modules recorded thereon, the program modules causing the processor, when read by a processor, to: receive a concentration control selection; receive at the processor a signal from a concentration sensor indicating the concentration of a fluid component in a fluid-carrier carried in a fluid delivered by a conduit, the concentration sensor being coupled to the conduit and configured to communicate with the sensor; determine the concentration of the fluid component; and, when the concentration differs from a predetermined concentration value by more than a predetermined concentration difference, control the concentration of the fluid component delivered by the conduit based on the concentration control selection by adjusting (a) the mass flow rate of the fluid, (b) the pressure of the fluid component-carrier, and (c) one of the mass flow rate of the fluid and the pressure of the fluid component-carrier.

[0027] This summary is provided to present the chosen concepts in a simplified form. These concepts are further described in detail in the following exemplary embodiments of this disclosure. This summary is not intended to identify key or essential features of the claimed subject matter, nor is it intended to limit the scope of the claimed subject matter. Attached Figure Description

[0028] These and other features, aspects, and advantages of the invention disclosed herein are described below with reference to the accompanying drawings of certain embodiments, which are intended to illustrate rather than limit the invention.

[0029] Figure 1 The schematic diagram of the semiconductor processing system including a fluid system and a gas phase reactor according to the present disclosure shows a fluid system for controlling the mass flow rate of evaporated liquid fluid components entrained in a fluid component-carrier to the gas phase reactor.

[0030] Figure 2 It is based on the example of this disclosure. Figure 1 A schematic diagram of a gas phase reactor and controller for a semiconductor processing system, showing a gas phase reactor with a single substrate crossflow arrangement;

[0031] Figure 3 It is based on the example of this disclosure. Figure 1 A block diagram of a fluid system is shown, illustrating a liquid container connected to a pressure control device (PCD) via a concentration control device (CCD) to a mass flow control device (MFC).

[0032] Figures 4 to 6 It is based on the example of this disclosure. Figure 3 Schematic diagrams of PCD, MFC, and CCD are shown, illustrating the PCD and MFC CCD communication setpoints using the concentration of fluid components entrained within the fluid component-carrier; and

[0033] Figures 7 to 11This is a block diagram of a flow control method, illustrating the operation of the method according to illustrative and non-restrictive examples.

[0034] It should be understood that the elements in the accompanying drawings are shown for simplicity and clarity and are not necessarily drawn to scale. For example, the relative dimensions of some elements in the drawings may be exaggerated relative to other elements to help improve the understanding of the embodiments illustrated in this disclosure. Detailed Implementation

[0035] Reference will now be made to the accompanying drawings, wherein the same reference numerals identify similar structural features or aspects of the subject matter disclosed herein. For purposes of explanation and illustration, and not limitation, partial views of the fluid system according to this disclosure are provided. Figure 1 As shown in the figure, and generally indicated by reference numeral 100. Figures 2 to 10 Other examples of fluid systems, semiconductor processing systems including fluid systems, and related flow control methods and computer program products or aspects thereof, are provided in accordance with this disclosure, as will be described. The systems and methods of this disclosure can be used to control fluid flow in fluid systems, such as in fluid systems used to deliver evaporated liquid material layer precursors in semiconductor processing systems; however, this disclosure is not limited to any particular type of fluid or semiconductor processing systems in general.

[0036] refer to Figure 1 This illustrates an example of a semiconductor processing system 1000 including a fluid system 100 according to the present disclosure. For example... Figure 1 As shown, the semiconductor processing system 1000 includes a fluid system 100, a gas phase reactor 200, an exhaust source 300, and a system controller 400. The fluid system 100 is connected to the gas phase reactor 200 via a supply conduit 202 and configured to flow fluid 10 (e.g., fluid component 12 entrained in a fluid component carrier 14) to the gas phase reactor 200 using the supply conduit 202. The gas phase reactor 200 is connected to the exhaust source 300 via an exhaust conduit 204 and configured to deposit a material layer 4 onto a substrate 2 supported within the gas phase reactor 200 using the fluid 10. The exhaust source 300 connects the gas phase reactor 200 to an external environment 16 outside the semiconductor processing system 1000 and is configured to, for example, transport residual fluid components and / or reaction products 18 discharged from the gas phase reactor 200 to the external environment 16 via one or more vacuum pumps 302 and emission reduction devices 304 such as a combustion chamber and / or a scrubber. The system controller 400 is operatively associated with the fluid system 100 via a wired or wireless link 206 and can be configured to control the flow of fluid 10 to the gas phase reactor 200, for example, by controlling the concentration of fluid component 12 entrained in the fluid component carrier 14 delivered to the gas phase reactor 200.

[0037] As used herein, the term "substrate" can refer to any one or more underlying materials, including any one or more underlying materials that can be modified or on which devices, circuits, or films can be formed. Substrates can be continuous or discontinuous; rigid or flexible; solid or porous; and combinations thereof. Substrates can be in any form, such as (but not limited to) powder, plate, or workpiece. Plate-type substrates can include wafers of various shapes and sizes, such as 300 mm wafers. Substrates can be formed from semiconductor materials, including, for example, silicon (Si), silicon-germanium (SiGe), silicon oxide (SiO2), gallium arsenide (GaAs), gallium nitride (GaN), and silicon carbide (SiC). Substrates can include patterned or unpatterned materials, such as so-called blanket substrates. As an example, powder-type substrates can have applications for pharmaceutical manufacturing. Porous substrates can include one or more polymers. Examples of workpieces can include medical devices (e.g., stents and syringes), jewelry, tooling devices, components for battery manufacturing (e.g., anodes, cathodes, or separators), or components for photovoltaic cells, etc. Continuous substrates can extend beyond the boundaries of the processing chamber where the deposition process takes place. In some processes, the continuous substrate can move through a processing chamber, allowing the process to continue until the end of the substrate is reached. The continuous substrate can be supplied from a continuous substrate feeding system to allow the continuous substrate to be manufactured and output in any suitable form. Non-limiting examples of continuous substrates may include sheets, nonwoven films, rolls, foils, meshes, flexible materials, bundles of continuous filaments or fibers (e.g., ceramic or polymer fibers). The continuous substrate may also include a carrier or sheet on which one or more discontinuous substrates are mounted.

[0038] refer to Figure 2 This illustration shows an example of a gas-phase reactor 200 according to the present disclosure. In the illustrated example, the gas-phase reactor 200 has a single-substrate crossflow architecture 250 and includes a chamber body 208, an injection flange 210, and an exhaust flange 212. As shown and described herein, the gas-phase reactor 200 also includes an upper heater element array 214, a lower heater element array 216, a lifting and rotating module 218, a separator 220, a substrate support 222, a support member 224, and a shaft member 226. Although shown and described herein, including certain features and having a specific arrangement, it should be understood and recognized that the gas-phase reactor 200 may include additional features and / or omit certain features shown and described herein, and / or have different arrangements (e.g., downflow or multi-substrate architecture) in other examples, and still remain within the scope of this disclosure.

[0039] The chamber body 208 is formed of a transparent material 228 (e.g., a material transparent to electromagnetic materials in the infrared band) and extends between the injection end 230 and the longitudinally opposite discharge end 232 of the chamber body 208. An injection flange 210 abuts the injection end 230 of the chamber body 208 and is connected to the fluid system 100 via a supply conduit 202. Figure 1 (As shown). The exhaust flange 212 is adjacent to the discharge end 232 of the chamber body 208, fluidly connected to the injection flange 210 through the interior 234 of the chamber body 208, and connected to the exhaust source 300 through the exhaust conduit 204. Figure 1 (As shown). In some examples, the transparent material 228 forming the chamber body 208 may include a ceramic material (or be composed of or substantially composed of it), such as fused silica, quartz, and sapphire as non-limiting examples. According to some examples, the chamber body 208 may have one or more external ribs 236. In such an example, the one or more external ribs 236 may extend laterally around the exterior of the chamber body 208. In such an example, the one or more external ribs 236 may further be one of a plurality of external ribs 236, each external rib 236 extending laterally around the exterior of the chamber body 208 and longitudinally spaced apart from each other between the injection end 230 and the discharge end 232 of the chamber body 208. It is contemplated that the injection flange 210 may be shown and described as in U.S. Patent No. 11,053,591 to Ma et al., dated July 6, 2021, the contents of which are incorporated herein by reference in their entirety. It is also envisioned that the exhaust flange 212 may be as shown and described in U.S. Patent No. 10,612,136 to Sreeram et al., dated April 7, 2020, the contents of which are also incorporated herein by reference in their entirety.

[0040] The partition 220 is formed of an opaque material 238 (e.g., a material opaque to electromagnetic radiation in the infrared band) and is disposed within the interior 234 of the chamber body 208. The partition 220 further divides the interior 234 of the chamber body 208 into an upper chamber 240 and a lower chamber 242. The partition 220 is envisioned to define a partition aperture 244 passing through it. The partition aperture 244 then fluidly connects the upper chamber 240 of the chamber body 208 to the lower chamber 242 of the chamber body 208, extends around the substrate support 222, and may be substantially circular in shape. In some examples, the opaque material 238 forming the partition 220 may comprise a ceramic material (or be composed of or substantially composed of it). Examples of suitable opaque materials include bulk silicon carbide, bulk pyrolytic carbon with a silicon carbide coating, and bulk graphite with a silicon carbide coating.

[0041] The substrate support 222 is envisioned to be supported within the interior 234 of the chamber body 208 for rotation R about the axis of rotation 246. More specifically, the substrate support 222 is arranged within and supported therein in a partition aperture 244 extending through the partition 220 for rotation R about the axis of rotation 246. The substrate support 222 is envisioned to also be formed of an opaque material (e.g., a material opaque to electromagnetic radiation in the infrared band), and in this respect may include a ceramic material (or be composed of or substantially composed of it), such as silicon carbide. According to some examples, the opaque material 238 may also include a bulk carbonaceous material (or be composed of or substantially composed of it), such as bulk pyrolytic carbon or bulk graphite with a silicon carbide coating. In some examples, the substrate support 222 may be shown and described as in U.S. Patent Application Publication No. 2022 / 0352006A1, filed April 27, 2022, the contents of which are incorporated herein by reference in their entirety.

[0042] Support member 224 is formed of a transparent material (e.g., transparent material 228) and is disposed within the lower chamber 242 of chamber body 208. Support member 224 is further disposed along rotation axis 246 and is rotatably fixed relative to substrate support 222 about rotation axis 246. Shaft member 226 is also contemplated to be formed of a transparent material (e.g., transparent material 228), further disposed along rotation axis 246 and rotatably fixed relative to support member 224 about rotation axis 246, and additionally extends through the lower wall of chamber body 208. Shaft member 226 is further contemplated to operatively connect substrate support 222 to lifting and rotating module 218 via support member 224. Lifting and rotating module 218 may further be configured to rotate substrate support 222 about rotation axis 246. The lifting and rotating module 218 may be further configured, for example, to place and remove a substrate (e.g., substrate 2) onto and from the substrate support 222 using a plurality of lifting pins slidably received in the substrate support 222 and lifting pin actuators operatively associated with the lifting and rotating module 218. Examples of suitable lifting and rotating modules, lifting pins, and lifting pin actuators are those shown and described in U.S. Patent Application Publication No. 2019 / 0051555A1 by Hill et al., the contents of which are incorporated herein by reference in their entirety.

[0043] The upper heater element array 214 is supported above the chamber body 208 and configured to transfer radiant heat into the interior 234 of the chamber body 208, for example by generating electromagnetic radiation in the infrared band and transmitting the electromagnetic radiation through the transparent material 228. In this regard, the upper heater element array 214 is envisioned to include a plurality of filament-type linear lamps, each supported above the chamber body 208. In some examples of this disclosure, the plurality of filament-type linear lamps may extend longitudinally between the injection end 230 and the discharge end 232 of the chamber body 208. Further envisioned, the plurality of filament-type linear lamps are laterally spaced apart from each other between the sidewalls of the chamber body 208. According to some examples of this disclosure, the plurality of filament-type linear lamps may extend laterally above the chamber body 208 and are longitudinally spaced apart from each other between the injection end 230 and the discharge end 232 of the chamber body 208. The lower heater element array 216 is envisioned to be similar to the upper heater element array 214 and additionally supported below the chamber body 208. It is envisioned that the upper heater element array 214 and the lower heater element array 216 can be integrated with the system controller 400 (…). Figure 1 (As shown) Operable correlation to control the heating of substrate 2, for example, during the deposition of material layer 4 onto substrate 2. Operable correlation can be achieved by cooperating with contact temperature sensors (such as thermocouples) and / or non-contact temperature sensors (such as pyrometers supported above or below chamber body 208) on the underside of adjacent substrate support 222.

[0044] For example Figure 2 As shown, the system controller 400 may include a system controller device interface 402, a system controller processor 404, a system controller user interface 406, and a system controller memory 408. The system controller device interface 402 communicatively connects the system controller 400 to the fluid system 100 via a wired or wireless link 206. The system controller processor 404 is operatively connected to the system controller user interface 406 and configured to communicate with the system controller memory 408. The system controller memory 408 includes a non-transitory machine-readable medium having a plurality of system controller program modules 410 containing instructions that, when read by the system controller processor 404, cause the system controller processor 404 to perform certain operations. As will be described, in operation this may be a flow control method 500 (… Figure 7 One or more operations (as shown) and in this respect may be a computer program product 412. Although shown and described herein with certain elements and having a particular arrangement, it should be understood and recognized that system controller 400 (and each controller shown and described herein) may include additional elements and / or omit elements shown and described herein, and may have different arrangements (e.g., distributed architecture), and still remain within the scope of this disclosure.

[0045] refer to Figure 3This illustration shows an example of a fluid system 100 according to the present disclosure. In the illustrated example, the fluid system 100 includes a concentration control device (CCD) 108, a mass flow control (MFC) device 110, a liquid container 112, a pressure control device (PCD) 114, and a carrier source 116. The carrier source 116 is fluidly coupled to the PCD 114 via a carrier source conduit 118, includes a fluid component-carrier 14, and is configured to deliver the fluid component-carrier 14 to the PCD 114 and thereby to the gas phase reactor 200 via the liquid container 112 and the CCD 108. Figure 1 (As shown). In some examples, the carrier source 116 may deliver the fluid component-carrier 14 in a gaseous state to the pressure control device 114, and in this respect, the fluid component-carrier 14 may consist of (or be substantially composed of) a gas. According to some examples, the fluid component-carrier 14 may comprise hydrogen (H2) (or consist of or be substantially composed of it). According to some examples, the fluid component-carrier 14 may comprise an inert fluid (or consist of or be substantially composed of it). Examples of suitable inert fluids include nitrogen (N2) and rare gases such as argon (Ar), krypton (Kr), and helium (He). It is also contemplated that the fluid component-carrier 14 may comprise a mixture containing one or more of the above-described fluid component-carrier fluids, and this is still within the scope of this disclosure.

[0046] Liquid container 112 is configured to form fluid 10 by evaporating liquid fluid component charge 30 contained within liquid container 112. More specifically, liquid container 112 is configured to form fluid 10 by evaporating liquid fluid component charge 30 using a fluid component-carrier 14 stream received from carrier source 116 via PCD 114, and to flow fluid 10 to gas phase reactor 200 via CCD 108 and MFC device 110. Figure 1 (As shown). In this regard, the liquid container 112 is envisioned to include a container body 152, a carrier inlet conduit 154, and a fluid outlet conduit 156. The container body 152 is configured to contain a liquid fluid component 30 within its interior and may be formed of stainless steel (e.g., 316L stainless steel) or a nickel-based alloy (e.g., Hastelloy). The liquid fluid component 30 is envisioned to be disposed within the interior of the container body 152, with the inner surface of the container body 152 and the surface of the liquid fluid component 30 defining a shortage space 32 therebetween. It is also envisioned that the shortage space 32 is occupied by a mixture of the fluid component 12 in a vapor state and the fluid component-carrier 14.

[0047] The carrier inlet conduit 154 is configured to introduce the fluid component-carrier 14 flow into the liquid fluid component charge 30, and in this respect, the carrier inlet conduit 154 fluidly connects the carrier source conduit 118 to the container body 152. In another aspect, it is also envisioned that the carrier inlet conduit 154 may extend through the deficiencies 32 and enter the liquid fluid component charge 30 towards a recess in the container body 152, such that the fluid component-carrier 14 is introduced into the liquid fluid component charge 30 and thereby foams. It is further envisioned that the fluid outlet conduit 156 is configured to convey the fluid component 12 (e.g., evaporated liquid fluid component) entrained in the fluid component-carrier 14 through the CCD 108 and the MFC device 110 to the gas phase reactor 200. Figure 1 (As shown). In this regard, it is envisioned that the fluid outlet conduit 156 is fluidly connected to the shortage space 32, the container body 152 is fluidly connected to the CCD 108 via the fluid supply conduit 158, and then fluidly connected to the gas phase reactor 200 via the supply conduit 202 through the CCD 108 and the MFC device 110. Figure 1 (As shown).

[0048] In some examples, the liquid container 112 may include one or more probe members for obtaining one or more of the liquid level, temperature, and pressure from within the container body 152. According to some examples, the container body 152 may include a heater and / or a cooler to appropriately control the temperature of the liquid fluid component charge 30 according to the composition of the fluid 10. It is also contemplated that the liquid container 112 may include a refill conduit, for example for in-situ or out-of-situ refilling of the liquid container 112, to restore the liquid fluid component charge 30, for example, using a level measurement acquired by a level sensor included in the probe members. Examples of suitable liquid containers include those shown and described in U.S. Provisional Patent Application No. 63 / 654,595, filed May 31, 2024, by Chitale et al., the contents of which are incorporated herein by reference in their entirety.

[0049] In some examples of this disclosure, the liquid fluid component charge 30 (and thus the fluid component 12 entrained in the fluid component carrier 14) may include a silicon-containing material layer precursor. In this respect, the liquid fluid component charge 30 (and the fluid component 12) may include (or be composed of, or substantially composed of) a silicon-containing liquid precursor. For example, the silicon-containing liquid precursor may include at least one silicon atom and one or more other elements, such as carbon, nitrogen, oxygen, halogens (e.g., F, Cl, Br, and I), phosphorus, and hydrogen. Examples of suitable silicon-containing liquid precursors include, but are not limited to, silanes (e.g., silane (SiH4), disilane (Si2H6), propane (Si3H8), and tetrasilane (Si4H). 10Halogenated silanes (e.g., chlorosilanes (SiH3Cl), dichlorosilanes (SiH2Cl2), trichlorosilanes (SiHCl3), tetrachlorosilanes (SiCl4), bromosilanes (SiH3Br), iodosilanes (SiH3I), diiodosilanes (SiH2I2), hexachlorosilanes (HCDS, Si2Cl6) and octachloropropanes (OCTS, Si3Cl8)), organosilanes (e.g., methylsilanes (SiH3CH3), dimethylsilanes (SiH2(CH3)2), trimethylsilanes (SiH(CH3)3) and tetramethylsilanes (Si(CH3)4)), aminosilanes, oxysilanes and silylphosphides (e.g., trimethylsilylphosphine (P(SiH3)3)).

[0050] According to certain examples of this disclosure, the liquid fluid component charge 30 (and thus the fluid component 12 entrained in the fluid component carrier 14) may include a germanium-containing liquid precursor (or be composed of or substantially composed of it). It is contemplated that the germanium-containing liquid precursor may include at least one germanium atom and one or more other elements, such as carbon, nitrogen, oxygen, halogens (e.g., F, Cl, Br, and I), and hydrogen. Examples of suitable germanium-containing liquid precursors include, but are not limited to, germananes (e.g., germanane (GeH4), digermanane (Ge2H4), and trigermanane (Ge3H8)), halogermananes (e.g., dichlorogermanane (GeH2Cl2), trichlorogermanane (GeHCl3), tetrachlorogermanane (GeCl4), tetrabromogermanane (GeBr4)), germanylsilanes (e.g., silylgermanane (GeH3SiH3)), organogermananes, aminogermananes, and oxygermananes. It is also contemplated that the liquid fluid component charge 30 (and the fluid component 12) may include a dopant-containing precursor (or be composed of or substantially composed of it). Doped precursors may include p-type dopants (e.g., boron (B), aluminum (Al), gallium (Ga), and indium (In)) or n-type dopants (e.g., phosphorus (P), arsenic (As), antimony (Sb), bismuth (Bi), and lithium (Li)). Doped precursors may include n-type doped precursors. Non-limiting examples of suitable arsenic-containing liquid precursors include tert-butylarsine (C4H4H4O7). 11 As).

[0051] refer to Figure 4 This illustrates an example of a PCD114 according to the present disclosure. It is envisioned that the PCD114 is configured to adjust via a carrier source 116 ( Figure 3 (As shown) is transferred to liquid container 112 ( Figure 3 The pressure of the fluid component - carrier 14 (as shown) is used to control the delivery to the gas phase reactor 200. Figure 1The concentration of fluid component 12 (shown) is specified. In this regard, PCD 114 can be fluidly connected to liquid container 112 via carrier supply conduit 120. In the illustrated example, PCD 114 includes PCD housing 122 (having PCD signal port 124, PCD inlet port 126, and PCD outlet port 128), pressure sensor 130, pressure control valve 132, and PCD controller 134. As those skilled in the art will understand from this disclosure, PCD 114 may include additional elements, and / or omit elements shown and described herein, and may have different arrangements in other examples, still within the scope of this disclosure.

[0052] PCD housing 122 houses PCD signal port 124 and encloses pressure sensor 130, pressure control valve 132, and PCD controller 134 therein. PCD inlet port 126 is fixed to PCD housing 122 and connects carrier source conduit 118 to PCD outlet port 128 via pressure sensor 130 and pressure control valve 132. PCD outlet port 128 connects PCD inlet port 126 to carrier supply conduit 120 via pressure sensor 130 and pressure control valve 132, and thus to liquid container 112. Pressure sensor 130 is envisioned to acquire pressure 20 (e.g., pressure measurement) of fluid component 14 during flow between PCD inlet port 126 and PCD outlet port 128. Pressure sensor 130 is configured to communicate with PCD controller 134 via pressure sensor lead 136 and transmit pressure 20 to PCD controller 134 via pressure sensor lead 136. It is also envisioned that pressure control valve 132 is configured to regulate the pressure of fluid component-carrier 14 during flow between PCD inlet port 126 and PCD outlet port 128, fluidly arranged between PCD inlet port 126 and PCD outlet port 128, and operatively associated with PCD controller 134. In this respect, pressure control valve 132 can regulate the pressure of fluid component-carrier 14 delivered to liquid container 112 according to pressure setting 22 received from PCD controller 134 via pressure control valve lead 138.

[0053] Imagine that the PCD controller 134 is configured to control the pressure of the fluid component—carrier 14—supplied by the carrier source 116 to the liquid container 112 based on one of the carrier pressure setpoint 24 and the series carrier pressure setpoint 26, the pressure setpoint being determined by the CCD 108 ( Figure 3 The concentration 28 of fluid component 12 entrained in fluid component-carrier 14 (as shown) was obtained. Figure 6(As shown) to perform calculations, for example in a closed-loop scheme. In this regard, the PCD controller 134 may include a PCD device interface 140, a PCD processor 142, a PCD user interface 144, and a PCD memory 146. The PCD device interface 140 connects the PCD processor 142 to the pressure sensor 130 via a pressure sensor lead 136 and to the pressure control valve 132 via a pressure control valve lead 138. The PCD device interface 140 also connects the PCD processor 142 to the PCD signal port 124 via a PCD signal lead 148, and thereby connects to the CCD 108 via a wired or wireless link 206. Figure 3 As shown), MFC device 110 ( Figure 3 (as shown) and / or system controller 400 ( Figure 4 (As shown). PCD processor 142 is operatively coupled to PCD user interface 144, for example, to receive user input and / or thereby provide user output, and is configured to communicate with PCD memory 146. PCD memory 146 further includes a non-transitory machine-readable medium on which a plurality of PCD program modules 150 are recorded, which, when read by PCD processor 142, cause PCD processor 142 to perform certain operations. A flow control method 500 is included in the operation. Figure 7 The operation of the fluid system 100 (as shown) is controlled, for example, by using one of the carrier pressure setpoint 24 and the series carrier pressure setpoint 26 received by the PCD processor 142 to adjust the pressure of the fluid component - carrier 14 (independently or in conjunction with the adjustment of the mass flow rate of fluid 10) to control the fluid system 100. Figure 1 The fluid component 12 (shown) is transferred Figure 1 The concentration (as shown in the figure).

[0054] In some examples, the PCD processor 142 can be connected via the PCD signal port 124, for example, from the CCD 108 ( Figure 3 As shown), MFC device 110 ( Figure 3 (as shown) or system controller 400 ( Figure 1 (As shown) Receive carrier pressure setpoint 24 and series carrier pressure setpoint 26. Imagine that PCD processor 142 uses pressure sensor 130 to acquire pressure 20 of fluid component-carrier 14, and PCD processor 142 compares pressure 20 with one of the received carrier pressure setpoint 24 and series carrier pressure setpoint 26. When the difference between pressure 20 and one of the carrier pressure setpoints 24 and 26 is less than a predetermined pressure difference, PCD processor 142 may not adjust the pressure of fluid component-carrier 14 supplied to liquid container 112. Figure 3(As shown), and another pressure measurement is acquired and compared with one of the received carrier pressure setpoint 24 and the series carrier pressure setpoint 26. When the pressure 20 differs from one of the carrier pressure setpoint 24 and the series carrier pressure setpoint 26 by more than a predetermined pressure difference, the PCD processor 142 may use the pressure control valve 132 to adjust the pressure of the fluid component - carrier 14, and another pressure measurement is acquired and compared with one of the received carrier pressure setpoint 24 and the series carrier pressure setpoint 26. In some examples of this disclosure, the PCD 114 may include an electronic pressure controller, such as the 640B series electronic pressure controller available from MKS Instruments, Andover, Massachusetts.

[0055] refer to Figure 5 An example of an MFC device 110 according to this disclosure is shown. The MFC device 110 is envisioned to be configured to control the delivery of fluids from the fluid system 100 to the gas phase reactor 200. Figure 1 The mass flow rate of fluid 10 (as shown) (e.g., the total mass flow rate of both fluid component 12 and the fluid component carrying fluid component 12 - carrier 14), and in this respect, MFC device 110 ( Figure 3 (As shown) is connected to the supply conduit 202 via the fluid supply conduit 158. In this regard, the MFC device 110 is envisioned to include an MFC housing 194, a mass flow sensor 103, a metering valve 105, and an MFC device controller 107. The MFC housing 194 has an MFC signal port 196, an MFC inlet port 198, and an MFC outlet port 101. The MFC housing 194 houses the MFC signal port 196, which connects the MFC device controller 107 to a wired or wireless link 206. The MFC housing 194 further encloses the mass flow sensor 103, the metering valve 105, and the MFC device controller 107 within it. As those skilled in the art will understand from this disclosure, the MFC device 110 may include additional elements, and / or omit elements shown and described herein, and may have different arrangements in other examples, still within the scope of this disclosure.

[0056] MFC inlet port 198 and MFC outlet port 101 are fixed relative to MFC housing 194. MFC inlet port 198 connects MFC device 110 to CCD 108 via fluid supply conduit 158 ​​and thereby to liquid container 112. Figure 3(As shown). MFC outlet port 101 is connected to supply conduit 202 and thus to gas phase reactor 200, and MFC inlet port 198 is connected to supply conduit 202 via metering valve 105 and mass flow sensor 103. In this regard, it is envisioned that metering valve 105 and mass flow sensor 103 are fluidly connected in series within MFC housing 194, for example along MFC conduit 133. Metering valve 105 connects mass flow sensor 103 to MFC inlet port 198 and may be arranged along MFC conduit 133. Mass flow sensor 103 can in turn connect metering valve 105 to MFC outlet port 101 and may also be arranged along MFC conduit 133 to deliver fluid 10, such as fluid component 12 entrained in fluid component-carrier 14 ( Figure 1 (As shown).

[0057] Mass flow sensor 103 is configured to acquire data from fluid system 100 ( Figure 1 (As shown) is conveyed to the gas phase reactor 200 ( Figure 1 The mass flow rate 34 of fluid 10 (as shown) is measured (e.g., mass flow rate measurement). In this regard, it is envisioned that mass flow sensor 103 is connected to MFC device controller 107 via mass flow meter lead 109 and configured to transmit the thus acquired mass flow rate 34 to MFC device controller 107. It is also envisioned that metering valve 105 is configured to regulate the mass flow rate of fluid 10 delivered from fluid system 100 to gas phase reactor 200, for example using a valve component such as a diaphragm, and is operatively associated with MFC device controller 107. This operative association can be transmitted via metering valve setting 36 by MFC device controller 107 and from MFC device controller 107 via metering valve lead 123 to metering valve 105, which in turn operatively associates MFC device controller 107 with metering valve 105.

[0058] Imagine MFC device 110 configured to control fluid system 100 ( Figure 1 (As shown) is conveyed to the gas phase reactor 200 ( Figure 1 The fluid 10 shown is, for example, fluid component 12 entrained in the fluid component carrier 14. Figure 1The mass flow rate is shown. It is also envisioned that the MFC device 110 is configured to control the mass flow rate of the fluid 10 based on one of a mass flow setpoint 38 and a series mass flow setpoint 40, which is received by the MFC device controller 107 via a wired or wireless link 206 through the MFC signal port 196, for example in a closed-loop configuration. In this regard, it is envisioned that the MFC device controller 107 is connected to the MFC signal port 196 via an MFC device signal lead 135 and includes an MFC device interface 111, an MFC device processor 113, an MFC device user interface 115, and an MFC device memory 117.

[0059] The MFC device interface 111 connects the MFC device processor 113 to the MFC signal port 196 via the MFC device signal lead 135, and is thereby connected to the CCD 108 via a wired or wireless link 206. Figure 3 As shown), MFC device 110 ( Figure 3 (as shown) and / or system controller 400 ( Figure 3 (As shown). The MFC device interface 111 further connects the MFC device processor 113 to the metering valve 105 and the mass flow sensor 103 via the metering valve lead 123 and the mass flow meter lead 109, respectively. The MFC device processor 113 is operatively connected to the MFC device user interface 115, for example, to receive user input and / or thereby provide user output, and is configured to communicate with the MFC device memory 117. The MFC device memory 117 further includes a non-transitory machine-readable medium having a plurality of MFC device program modules 119 recorded thereon, the program modules 119 containing instructions that, when read by the MFC device processor 113, cause the MFC device processor 113 to perform certain operations. These operations include flow control method 500 ( Figure 7 The operation of the fluid system 100 (as shown) is controlled by adjusting the mass flow rate of the fluid 10 using the metering valve 105 (either independently or in conjunction with the adjustment of the pressure of the fluid component-carrier 14) by using one of the mass flow setpoint 38 and the series mass flow setpoint 40 received by the MFC device processor 113. Figure 1 (As shown) is conveyed to the gas phase reactor 200 ( Figure 1 Fluid composition 12 (as shown) Figure 1 The concentration (as shown in the figure).

[0060] In some examples, the MFC device processor 113 can be connected via MFC signal port 196, for example, from CCD 108 ( Figure 3 As shown), PCD114 ( Figure 3 (as shown) or system controller 400 ( Figure 1(As shown) Receives one of the mass flow rate setpoint 38 and the series pressure setpoint 58. Imagine that the MFC device processor 113 further obtains the mass flow rate 34 of the fluid 10 from the mass flow sensor 103, and the MFC device processor 113 compares the mass flow rate 34 with one of the mass flow rate setpoint 38 and the series mass flow rate setpoint 40. When the mass flow rate 34 differs from one of the mass flow rate setpoints 38 and 40 by less than a predetermined mass flow rate difference, the MFC device processor 113 can, without using the metering valve 105, measure the flow rate to the gas phase reactor 200 (…). Figure 1 The mass flow rate of fluid 10 (as shown) is adjusted, and mass flow rate monitoring can then continue by acquiring another mass flow rate measurement and making another comparison. When the mass flow rate 34 differs from one of the mass flow rate setpoints 38 and 40 in series by a predetermined mass flow rate difference, the MFC device processor 113 may adjust the mass flow rate of fluid 10 using metering valve 105. Mass flow rate monitoring can then continue by acquiring further mass flow rate measurements and making further comparisons. In some examples, the MFC device 110 may include a GF100 series MFC device available from Brooks Instruments LLC, Hatfield, Pennsylvania.

[0061] refer to Figure 6 The image shows a CCD 108. The CCD 108 is configured to acquire entrained fluid in the fluid system 100. Figure 1 (As shown) is conveyed to the gas phase reactor 200 ( Figure 1 The concentration of fluid component 12 in carrier 14 is shown. In this regard, it is envisioned that CCD 108 can measure the concentration of fluid component 12 in liquid container 112. Figure 3 As shown) and thus PCD114 ( Figure 3 (as shown) and carrier source 116 ( Figure 3 (As shown) fluid connection to MFC device 110 ( Figure 3 (As shown). In the illustrated example, CCD 108 includes a CCD housing 162 having a CCD signal port 164, a CCD inlet port 166, a CCD outlet port 168, and a CCD conduit 102. As shown and described herein, CCD 108 also includes a concentration sensor 137 and a CCD controller 170, the concentration sensor 137 including a transmitter 104 and a receiver 106. Although shown and described herein including certain elements and having a particular arrangement, it should be understood and recognized that CCD 108 may include additional elements, and / or omit elements shown and described herein, as well as have different arrangements in other examples, and still remain within the scope of this disclosure.

[0062] The CCD housing 162 houses the CCD signal port 164 and encloses the CCD conduit 102, concentration sensor 137, and CCD controller 170 therein. The CCD inlet port 166 is fixed to the CCD housing 162 and the fluid source conduit 160 is connected to the CCD conduit 102, through which the CCD 108 is fluidly connected to the liquid container 112. Figure 3 As shown). It is envisioned that the CCD outlet port 168 is also fixed to the CCD housing 162, and the CCD outlet port 168 further connects the fluid supply conduit 158 ​​to the CCD conduit 102, thereby fluidly connecting the CCD 108 to the MFC device 110 (as shown). Figure 3 (As shown). It is also envisioned that the CCD conduit 102 fluidly connects the CCD inlet port 166 to the CCD outlet port 168, and the concentration sensor 137 is further connected to the CCD conduit 102 for thereby conveying the fluid 10 delivered by the CCD conduit 102. In this regard, it is envisioned that the transmitter 104 is acoustically or optically connected to the CCD conduit 102 and communicatively connected to the CCD controller 170 via transmitter lead 178. In some examples of this disclosure, similarly acoustically or optically, the receiver 106 may also be connected to the CCD conduit 102 and thereby connected to the transmitter 104 via the fluid 10 delivered by the CCD conduit 102. It is envisioned that the receiver 106 is communicatively connected to the CCD controller 170 via receiver lead 176.

[0063] In some examples, the concentration sensor 137 may be an acoustic concentration sensor. In such examples, the transmitter 104 may include a transmitter piezoelectric unit 125 and the receiver 106 may include a receiver piezoelectric unit 127 configured to transmit signal 46 to the CCD controller 170. Examples of suitable acoustic concentration sensors include Piezocon. ® A gas concentration sensor, available from Veeco Instruments, Plainview, New York. According to some examples, concentration sensor 137 may be an optical concentration sensor. In such an example, transmitter 104 may include illuminator 129, and receiver 106 may include illumination detector 131, configured to transmit signal 46 to CCD controller 170. Examples of suitable optical concentration sensors include the T-Series Advanced Infrared Gas Analyzer, also available from MKS Instruments. As those skilled in the art will understand from this disclosure, other types of concentration sensors may be employed in CCD 108, such as concentration sensors that employ neither acoustic nor optical sensing technologies, and are still within the scope of this disclosure.

[0064] The CCD controller 170 is communicatively connected to the CCD signal port 164 via the CCD signal lead 180, and thereby connected to a wired or wireless link 206. The CCD controller 170 may be further operatively connected to the concentration sensor 137. In this regard, it is envisioned that the CCD controller 170 may be operatively connected to the transmitter 104 to transmit a signal 46 to the fluid 10 conveyed by the CCD conduit 102, and configured to communicate with the receiver 106 to receive from the receiver 106 the signal 46 modulated by the fluid component 12 conveyed by the fluid 10. In another aspect, the CCD controller 170 may be configured to determine the concentration of the fluid component 12 entrained in the fluid component-carrier 14 included in the fluid 10 conveyed by the CCD conduit 102. The CCD controller 170 may also be operatively connected to the PCD 114 (…). Figure 3 (as shown) and MFC device 110 ( Figure 3 (As shown), the concentration of fluid component 12 is controlled by concentration control selection 44 received by CCD controller 170.

[0065] In the example shown, the CCD controller 170 includes a CCD device interface 182, a CCD processor 184, a CCD user interface 186, and a CCD memory 188. The CCD device interface 182 communicatively connects the CCD processor 184 to a concentration sensor 137, for example, via transmitter lead 178 to a transmitter 104 and via receiver lead 176 to a receiver 106. The CCD device interface 182 also communicatively connects the CCD processor 184 to a wired or wireless link 206 via CCD signal lead 180 and CCD signal port 164, and thereby connects to a system controller 400. Figure 1 As shown), PCD114 ( Figure 3 (as shown) and MFC device 110 ( Figure 3 One or more of the following (shown). The CCD processor 184 may also be operatively coupled to the CCD user interface 186, for example, to receive user input and / or provide user output, and is configured to communicate with the CCD memory 188. The CCD memory 188 further includes a non-transitory machine-readable medium having a plurality of CCD program modules 190 recorded thereon, which contain instructions that cause the CCD processor 184 to perform certain operations when read by the CCD processor 184. As will be described, in operation is a flow control method 500 (… Figure 7 The operation of the CCD controller 170 is shown herein. Although it is shown and described herein including certain elements and having a particular arrangement, it should be understood and recognized that the CCD controller 170 may include additional elements and / or omit elements shown and described herein, or have a different arrangement (e.g., a distributed computing architecture), and is still within the scope of this disclosure.

[0066] In some examples, instructions recorded on the CCD memory 188 can cause the CCD processor 184 to receive signal 46 and determine the concentration 28 of fluid component 12 in the fluid component-carrier 14 included in the fluid 10 transported by the CCD conduit 102. According to some examples, the instructions on the CCD memory 188 can also cause the CCD processor to receive signal 46 from the system controller 400, for example, via wired or wireless link 206. Figure 1 (As shown) Receive concentration control selection 44. In some examples, it is envisioned that when the concentration control selection 44 received by the CCD processor 184 is (a) the mass flow rate of the fluid to adjust the mass flow rate of the fluid 10 delivered by the CCD conduit 102, the instruction recorded on the CCD memory 188 may cause the CCD processor 184 to determine the mass flow rate setpoint 38. Figure 5 (as shown) and transmits the mass flow setpoint 38 to the MFC device 110. It is also envisioned, according to some examples, that when the concentration control selection 44 received by the CCD processor 184 is (b) the pressure of the fluid component-carrier, instructions recorded on the CCD memory 188 can cause the CCD processor 184 to determine the pressure setpoint 24 (as shown). Figure 4 As shown), and transmits the pressure setpoint 24 to PCD114 (as shown). Figure 3 (As shown) to adjust the pressure of the fluid component-carrier. It is also envisioned that when the concentration control selection 44 received by CCD 108 is (c) both the mass flow rate of the fluid and the pressure of the fluid component-carrier, the instruction recorded on CCD memory 188 can cause controller 184 to determine the series mass flow setpoint 40 (as shown). Figure 4 (as shown) and series pressure setpoint 26 ( Figure 5 (As shown) Both are used to regulate the mass flow rate of fluid 10 and the pressure of fluid component-carrier 14. Figure 1 (As shown). For example, the aforementioned setpoint can be retrieved from a lookup table recorded in one or more of a plurality of CCD program modules 190 recorded on CCD memory 188, the lookup table having a concentration-setpoint association specific to each concentration control selection (a)-(c). It is also envisioned that instructions recorded on CCD memory 188 can cause CCD processor 184 to transfer concentration 28 to another processor, such as system controller processor 404. Figure 2 (as shown), and other processors determine and transmit the above setpoint to MFC device 110 and PCD 114 according to concentration control selection 44, and are still within the scope of this disclosure.

[0067] refer to Figures 7 to 11 This illustrates a flow control method 500 according to an example of this disclosure. Figure 7 As shown, the flow control method 500 includes delivering fluid through a conduit, for example through a CCD conduit 102 ( Figure 6(As shown) Transport fluid 10 ( Figure 1 As shown in box 502, concentration control selection can be received at the user interface, for example, in the system controller user interface 406. Figure 2 The concentration control selection at the location shown is 44. Figure 6 (as shown), and a signal received from a concentration sensor indicating the concentration of the fluid component carried in the fluid-carrier, for example from concentration sensor 137 ( Figure 6 The received signal 46 (shown) Figure 6 As shown in boxes 504 and 506. It is conceivable that signals can be used to determine the concentration of fluid components entrained in the fluid—the fluid components within the carrier, such as fluid component 12 (…). Figure 1 The concentration of the fluid component is controlled by: (a) adjusting the mass flow rate of the fluid, (b) adjusting the pressure of the fluid component, and (c) adjusting the mass flow rate of the fluid and the pressure of the fluid-carrier component according to the concentration selected and determined based on the received concentration control; as shown in box 510. In this regard, it is envisioned that the concentration obtained using the signal can be compared with a predetermined concentration value, and when the concentration differs from the predetermined concentration value by more than a predetermined concentration difference selected according to the received concentration control, the concentration of the fluid component entrained in the fluid component-carrier can be controlled by adjusting either (or both) the mass flow rate of the fluid and the pressure of the fluid component-carrier.

[0068] In some examples, the fluid component may be an evaporated liquid material layer precursor, as shown in box 512. According to some examples, a conduit may deliver the fluid to a gas-phase reactor, such as gas-phase reactor 200. Figure 1 As shown in box 514. It is also envisioned that the material layer can be deposited onto a substrate supported within the gas-phase reactor, such as material layer 4 (…). Figure 1 As shown) deposited onto substrate 2 ( Figure 1 The material layer can be deposited using epitaxial deposition techniques, as shown in boxes 516 and 518. According to some embodiments, the evaporated material layer precursor may include (or consist of, or substantially consist of) an evaporated liquid silicon-containing material layer precursor, also as shown in box 512. According to some embodiments, the evaporated material layer precursor may include (or consist of, or substantially consist of) an evaporated liquid germanium-containing material layer precursor, as further shown in box 512. It is also contemplated that the evaporated material layer precursor may include (or consist of, or substantially consist of) an evaporated liquid doped material layer precursor, as additionally shown in box 512. As those skilled in the art will understand in light of this disclosure, the flow control method can be used with other types of fluids and remains within the scope of this disclosure.

[0069] like Figure 8As shown, receiving the 504 signal may include using acoustic or optical techniques, employing a transmitter and receiver included in the concentration sensor (e.g., transmitter 104). Figure 6 (as shown) and receiver 106 ( Figure 6 The signal is acquired as shown in brackets 520 and 532. Acoustively acquiring the concentration of the fluid component may include using a transmitter to acoustically transmit the signal through a conduit into the fluid transported by the conduit, as shown in box 522. The acoustic signal may be acoustically modulated within the conduit by the fluid transported by the fluid, as shown in box 524, and subsequently received by a receiver from the fluid through the conduit, as shown in box 526. The acoustic signal may then be electrically communicated from the receiver to a processor, such as CCD processor 184. Figure 6 As shown in box 526, the processor can also use the signal to determine the concentration of the fluid component. In some examples, the signal can be acoustically transmitted by a transmitter piezoelectric unit, as shown in box 528, and acoustically received by a receiver piezoelectric unit, as shown in box 530. It is also envisioned that the signal can be acoustically transmitted and received by a common piezoelectric unit, as shown in both boxes 528 and 530.

[0070] Optically acquiring the concentration of a fluid component may include using a transmitter to optically transmit a signal through a conduit into the fluid being transported by the conduit, as shown in box 534. The optical signal may be optically modulated within the conduit by the fluid being transported by the fluid, as shown in box 536, and the modulated optical signal may then be optically received from the fluid by a receiver through the conduit, as shown in box 538. The signal may then be electrically communicated from the receiver to a processor, also as shown in box 538, and the processor may use the signal to determine the concentration. In some examples, an illuminator disposed within the transmitter may be used to transmit the light signal, as shown in box 540. According to some examples, the signal may be received by an illumination photodetector (e.g., a photodetector) disposed within the receiver, as shown in box 542.

[0071] like Figure 9 As shown, the concentration of the fluid component 510 can be controlled locally or remotely relative to the concentration control device, as shown in box 544. In some examples, the adjustment of either (or both) of the fluid's mass flow rate and the fluid component-carrier pressure can be achieved locally by determining either (or both) the fluid's mass flow rate setting and the fluid component-carrier pressure using a CCD processor, and then transmitting this information to the mass flow control device and / or pressure control device (e.g., MFC device 110). Figure 3 (as shown) and / or PCD114 ( Figure 3As shown in box 546. According to some examples, the adjustment of either (or both) of the mass flow rate of the fluid and the pressure of the fluid component-carrier can be achieved remotely using the concentration of the fluid component relative to a concentration control device determined by a CCD processor, as shown in box 548. In this respect, the concentration can be controlled via a wired or wireless link (e.g., wired or wireless link 206). Figure 1 As shown), the CCD processor is connected to a remote processor, such as the system controller processor 404, for communication. Figure 4 As shown in box 548, the remote processor can then use the CCD processor to determine either (or both) the mass flow rate setpoint and the pressure of the fluid component-carrier, and the remote processor further transmits the mass flow rate setpoint and pressure setpoint to the mass flow control device and / or pressure control device, as further shown in box 548.

[0072] The concentration of the fluid component transported by the conduit 510 can vary depending on the concentration control selection. For example, when the concentration control selection is (a) adjusting the mass flow rate of the fluid, such as the mass flow rate setpoint 38 ( Figure 4 When (as shown), concentration can be used to determine the mass flow rate setpoint, as shown in boxes 550 and 552. The calculated mass flow rate setpoint can be transmitted to the MFC device, as shown in box 554, and the concentration of the fluid component delivered by the conduit can be continuously monitored using the mass flow rate setpoint until another acquired concentration indicates that the mass flow rate setpoint needs further adjustment, as shown in arrows 556 and box 506. Alternatively, concentration can be used to determine the pressure control setpoint, such as pressure setpoint 62 (as shown). Figure 5 As shown in arrows 558, boxes 560 and 562. The pressure setpoint can be transmitted to a pressure controller, as shown in box 564, and the pressure of the fluid component-carrier can be continuously monitored using the pressure setpoint, for example, using a closed-loop control scheme, as shown in arrows 566 and box 506. It is noteworthy that when the received concentration control selection is (a) adjusting the mass flow rate of the fluid, the pressure control setpoint for controlling the pressure of the fluid component-carrier can remain unchanged, as shown in box 550, and when the received concentration control selection is (b) adjusting the pressure of the fluid component-carrier, the mass flow rate setpoint for controlling the mass flow rate of the fluid can remain unchanged, as further shown in box 560. As those skilled in the art will understand from this disclosure, this enables the use of a concentration controller with a single hardware configuration for fluid systems that deliver fluids and comply with concentration control schemes requiring either fluid mass flow rate control or fluid component-carrier pressure control, thereby simplifying the arrangement of the fluid system and / or the semiconductor processing system employing such a fluid system.

[0073] Imagine that when the concentration control selection (c) is received to adjust the mass flow rate of the fluid and the pressure of the fluid component-carrier, the series mass flow rate setpoint and the series pressure setpoint are determined, for example, the series mass flow rate setpoint 56. Figure 6 (as shown) and series pressure setpoint 58 (also Figure 6 As shown in arrows 568, boxes 570, and 572. The series mass flow setpoint can be transmitted to the MFC device, as shown in box 574. The series pressure setpoint can be transmitted to the pressure control device, as shown in box 576, and the series mass flow setpoint is used to continue monitoring the mass flow rate of the fluid and the pressure of the fluid component-carrier, while the series pressure setpoint continues to monitor the pressure, for example, using a closed-loop control scheme, as shown in arrows 568 and box 506. In some examples, the series mass flow setpoint and series pressure setpoint can be transmitted to the MFC device and the pressure control device substantially simultaneously, as shown in bracket 580. According to some examples, the series mass flow rate setpoint is determined when a concentration control selection (c) is received to adjust both the mass flow rate of the fluid and the pressure of the fluid component-carrier, rather than when a concentration control selection (a) is received to adjust the mass flow rate of the fluid, and the series pressure setpoint is determined when a concentration control selection (c) is received to adjust both the mass flow rate of the fluid and the pressure of the fluid component-carrier, rather than when a concentration control selection (b) is received to adjust the pressure of the fluid component-carrier, as shown in boxes 576 and 578. As those skilled in the art will understand from this disclosure, adjusting both the mass flow rate of the fluid and the pressure of the fluid component-carrier can limit the range of mass flow rate variations made by the MFC device. As those skilled in the art will also understand from this disclosure, adjusting both the mass flow rate of the fluid and the pressure of the fluid component-carrier can also limit the cost of the fluid system, for example, by enabling the use of MFC devices with a relatively narrow mass flow rate control range, wherein the mass flow rate is linear with respect to the range of movement of valve members included in the metering valve within the MFC device.

[0074] like Figure 10 As shown, this illustrates controlling the mass flow rate of a fluid component transported by a conduit 510 using a closed-loop control scheme, employing either a mass flow setpoint or a series mass flow setpoint. As shown in box 582, it is envisioned that the mass flow setpoint and the series mass flow setpoint are fluidly connected to the conduit via an MFC device (e.g., MFC device 110). Figure 3As shown in box 584, the MFC device can also acquire the mass flow rate of the fluid transported by the conduit, for example, using a mass flow meter included in the MFC device located downstream of the fluid in the conduit. The acquired mass flow rate can be compared with one of a mass flow setpoint and a series mass flow setpoint, and no action is taken when the mass flow rate of the fluid differs from one of the mass flow setpoints and the series mass flow setpoints by less than a predetermined mass flow rate difference, as shown in box 588. When the mass flow rate of the fluid differs from one of the mass flow setpoints and the series mass flow setpoints by more than a predetermined mass flow rate difference, the mass flow rate of the fluid can be adjusted, as shown in box 592, for example, using a metering valve included in the MFC device. It is envisioned that the monitoring of the mass flow rate can then continue at any event by acquiring another mass flow rate and comparing the subsequently acquired mass flow rate with one of the mass flow setpoints and the series mass flow setpoints, as shown in arrows 590 and 594.

[0075] like Figure 11 As shown, this illustrates controlling the mass flow rate of the fluid component transported by the conduit 510 using a closed-loop control scheme, employing either a pressure setpoint or a series pressure setpoint. As shown in box 596, one of the pressure setpoint and the series pressure setpoint can be received by a pressure control device, such as pressure control device 114. Figure 3 As shown in box 598, the pressure control device can also acquire the pressure of the fluid component-carrier, for example, using a pressure sensor included in the pressure control and in flow communication with the fluid component-carrier used for evaporating the liquid fluid component and transporting the evaporated liquid fluid component to the conduit. It is envisioned that the acquired pressure can be compared with one of a pressure setpoint and a series pressure setpoint, as shown in boxes 501 and 503, and that no action is taken when the pressure of the fluid component-carrier differs from one of the pressure setpoint and the series pressure setpoint by less than a predetermined pressure difference, as shown by arrow 505. It is also envisioned that the pressure of the fluid component-carrier can be adjusted, wherein the acquired pressure differs from one of the pressure setpoint and the series pressure setpoint by more than a predetermined pressure difference, as shown by arrows 507 and 509. Pressure monitoring can then continue, as shown by arrow 511.

[0076] Although this disclosure has been provided in the context of certain embodiments and examples, those skilled in the art will understand that this disclosure extends beyond the specifically described embodiments to other alternative embodiments and / or uses of embodiments, as well as their obvious modifications and equivalents. Furthermore, while several variations of embodiments of this disclosure have been shown and described in detail, other modifications within the scope of this disclosure will be apparent to those skilled in the art. Various combinations or sub-combinations of specific features and aspects of the embodiments are also contemplated and still fall within the scope of this disclosure. It should be understood that various features and aspects of the disclosed embodiments can be combined or substituted with each other to form variations of embodiments of this disclosure. Therefore, it is intended that the scope of this disclosure should not be limited to the specific embodiments described above.

[0077] The headings provided herein (if any) are for convenience only and do not necessarily affect the scope or meaning of the apparatus and methods disclosed herein.

Claims

1. A fluid system comprising: a conduit; a concentration sensor coupled to the conduit; and a processor disposed in communication with the concentration sensor and responsive to instructions recorded on a memory to: receive a concentration control selection; receive a signal indicative of a concentration of a fluid constituent entrained in a fluid constituent-carrier being transported by the conduit; determine the concentration of the fluid constituent; and based on the concentration control selection, control the concentration of the fluid constituent by adjusting one of (a) a mass flow rate of the fluid, (b) a pressure of the fluid constituent-carrier, and (c) the mass flow rate of the fluid and the pressure of the fluid constituent-carrier when the determined concentration differs from a predetermined concentration value by more than a predetermined concentration difference. the concentration sensor comprises:

2. The fluid system of claim 1, wherein, an acoustic emitter coupled to the conduit, and an acoustic receiver coupled to the emitter by the conduit. the concentration sensor comprises:

3. The fluid system of claim 1, wherein, an illuminator coupled to the conduit; and a detector coupled to the illuminator by the conduit.

4. The fluid system of claim 1, further comprising: a liquid container fluidically coupled to the concentration sensor; a pressure control device fluidically coupled to the liquid container and thereby fluidically coupled to the concentration sensor; and a mass flow control device fluidically coupled to the concentration sensor and thereby fluidically coupled to the pressure control device through the liquid container. the concentration sensor is operably coupled to the pressure control device and the mass flow control device.

5. The fluid system of claim 4, wherein, 6. The fluid system of claim 4, further comprising: a liquid material layer precursor contained in the liquid container; a carrier source comprising a carrier fluid, the carrier source fluidically coupled to the liquid container through the pressure control device; wherein the liquid material layer precursor comprises a silicon-containing material layer precursor, a germanium-containing material layer precursor, or a dopant-containing material layer precursor; and wherein the carrier source is configured to deliver a flow of the carrier fluid to the liquid container to vaporize the liquid material layer precursor contained in the liquid container.

7. The fluid system of claim 4, further comprising a vapor phase reactor having a single wafer cross flow architecture coupled to the mass flow control device and thereby coupled to the pressure control device through the concentration sensor and the liquid container.

8. The fluid system of claim 4, further comprising a wired or wireless link communicatively coupling the concentration sensor to the pressure control device and the mass flow control device. the instructions recorded on the memory further cause the processor to:

9. The fluid system of claim 1, further comprising a mass flow control device fluidly coupled to the concentration sensor, and wherein, compare the concentration to a predetermined concentration value; and when the received concentration control selection is (a) the mass flow rate of the fluid, adjust the mass flow rate of the fluid being transported by the conduit when the determined concentration differs from a predetermined concentration value by more than a predetermined concentration difference. adjusting the mass flow rate of the fluid comprises:

10. The fluid system of claim 9, wherein, determining a mass flow set point using the concentration; and delivering the mass flow set point to the mass flow control device. the instructions further cause the processor to:

11. The fluid system of claim 1, further comprising a pressure control device fluidly coupled to the concentration sensor, and wherein, compare the concentration to a predetermined concentration value; and ​ when the received concentration control selection is (b) pressure of the fluid constituent-carrier, adjusting the pressure of the fluid constituent-carrier when the concentration differs from a predetermined concentration value by more than a predetermined concentration difference.

12. The fluid system of claim 11, wherein, adjusting the pressure of the fluid constituent-carrier includes: using the concentration to determine a pressure setpoint; and communicating the pressure setpoint to the pressure control device.

13. The fluid system of claim 1, further comprising: a pressure control device fluidically coupled to the concentration sensor; a mass flow device fluidically coupled to the pressure control device through the concentration sensor; and wherein the instructions recorded on the memory further cause the processor to: compare the concentration to a predetermined concentration value; and when the received concentration control selection is (c) both mass flow rate of the fluid and pressure of the fluid constituent-carrier, adjusting both the mass flow rate of the fluid and the pressure of the fluid constituent-carrier when the concentration differs from a predetermined concentration value by more than a predetermined concentration difference.

14. The fluid system of claim 13, wherein, adjusting both the mass flow rate of the fluid and the pressure of the fluid constituent-carrier includes: using the concentration to determine a series mass flow setpoint and a series pressure setpoint; and communicating the series mass flow setpoint to the mass flow device and the series pressure control setpoint to the pressure control device.

15. The fluid system of claim 1, further comprising: a concentration control device housing that encloses the concentration sensor; and a wired or wireless link coupled to the concentration sensor that couples the concentration sensor to the processor.

16. A semiconductor processing system, comprising: the fluid system of claim 1, further comprising: a liquid container fluidically coupled to the conduit; and a layer of liquid silicon-containing material precursor in a liquid state contained within the liquid container; a gas phase reactor coupled to the conduit; an exhaust source coupled to the gas phase reactor and thereby coupled to the fluid system; and a system controller operably coupled to the gas phase reactor, wherein the system controller includes a processor.

17. A method of flow control, comprising: at a fluid system, the fluid system including a conduit, a concentration sensor coupled to the conduit, and a processor disposed in communication with the concentration sensor and responsive to instructions recorded on a memory, receiving, at the processor, a concentration control selection; receiving, at the processor, a signal indicative of a concentration of a fluid constituent entrained in a fluid-carrier entrained in a fluid being transported by the conduit; determining, using the processor, the concentration of the fluid constituent; and controlling, based on the concentration control selection, the concentration of the fluid constituent being transported by the conduit by adjusting one of (a) a mass flow rate of the fluid, (b) a pressure of the fluid constituent-carrier, and (c) both the mass flow rate of the fluid and the pressure of the fluid constituent-carrier when the determined concentration differs from a predetermined concentration value by more than a predetermined concentration difference.

18. The flow control method of claim 17, wherein, the fluid constituent includes an evaporated liquid silicon-containing material layer precursor, an evaporated liquid germanium-containing material layer precursor, and / or an evaporated liquid dopant-containing material layer precursor.

19. The flow control method of claim 17, wherein, the fluid constituent includes an evaporated liquid material layer precursor; the method further comprising: communicating, using the conduit, a fluid to a gas phase reactor; and By using epitaxial deposition techniques, layers of material are deposited onto substrates supported in a gas phase reactor using evaporated liquid material layer precursors.

20. A computer program product, comprising: a non-transitory machine-readable medium having stored thereon a plurality of program modules, the program modules being readable by a processor to cause the processor to: receive a concentration control selection; receive, at the processor, a signal from a concentration sensor indicative of a concentration of a fluid constituent in a fluid-carrier entrained in a fluid being transported by a conduit, the concentration sensor being coupled to the conduit and disposed in communication with the sensor; determine the concentration of the fluid constituent; and control the concentration of the fluid constituent being transported by the conduit by adjusting one of (a) a mass flow rate of the fluid, (b) a pressure of the fluid constituent-carrier, and (c) the mass flow rate of the fluid and the pressure of the fluid constituent-carrier based on the concentration control selection when the concentration differs from a predetermined concentration value by more than a predetermined concentration difference.

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