End effector and substrate transfer sequence for vertical clearance limited thick, heavy and / or curved substrates

Abstract

The end effector includes a body including a first body portion connected to a wrist of the robotic arm; a second body portion extending from the first body portion and including a first arm, a second arm, and a slot between the first arm and the second arm; and a plurality of contact pads. The plurality of contact pads includes: N contact pads disposed on the second body portion adjacent to the first body portion, where N is an integer greater than 2; m contact pads disposed at distal ends of the first arm and the second arm, respectively; p contact pads; and Q contact pads, wherein M, P and Q are integers greater than 1. The P number of contact pads and the Q number of contact pads are located on the first arm and the second arm between the N number of contact pads and the M number of contact pads.

Description

[0001] Cross-references to related applications This application claims priority to U.S. Provisional Application No. 63 / 529,498, filed July 28, 2023. The entire contents of the aforementioned application are incorporated herein by reference. Technical Field

[0002] This disclosure relates to substrate handling systems, and in particular to end effectors and substrate transfer sequences for thick, heavy and / or curved substrates. Background Technology

[0003] The background description provided herein is for the purpose of presenting the general context of this disclosure. The work of the currently designated inventors within the scope described in this background section, as well as aspects of the specification that could not be identified as prior art at the time of filing, are neither express nor implied admissions of prior art to this disclosure.

[0004] Substrate processing systems are typically used to process substrates, such as semiconductor wafers. For example, substrate processing systems can be used to deposit thin films on substrates, etch thin films on substrates, clean the surface of substrates, and / or perform other processes. Different types of processing chambers are used, depending on the type of substrate processing to be performed. During deposition, the substrate is transported to the processing chamber, and deposition process gases are supplied to the processing chamber via a gas delivery system. During etching, the substrate is transported to the processing chamber, and etching process gases are supplied to the processing chamber via a gas delivery system. During etching and deposition, plasma can be used to enhance the chemical reactions.

[0005] The design of processing chambers is typically optimized for a given substrate processing and the physical properties of the substrate to be processed. In some substrate processing, the clearance between the top surface of the substrate and the bottom surface of the nozzle, dielectric window, or other chamber structure is minimized to enhance the efficiency of substrate processing. Minimizing these dimensions imposes limitations on the substrate transport sequence, the size of the end effector, the movement of the lifting pin, the height of the edge ring, and so on.

[0006] The dimensions of the processing chamber are typically specified based on substrates within a predetermined or standard range of weight, thickness, and / or curvature. Problems arise when the processing chamber is used to process non-standard substrates that are heavier, thicker, and / or have more pronounced curvature than standard substrates. In other words, non-standard substrates cannot be conveyed to the substrate support without contacting the lifting pins, edge rings, chamber bushing slot openings, or other structures within the processing chamber. Therefore, non-standard substrates must be processed in a different type of processing chamber, increasing costs. Summary of the Invention

[0007] An end effector for a substrate processing system includes: a body comprising: a first body portion configured to be connected to the wrist of a robotic arm; a second body portion extending from the first body portion and including a first arm, a second arm, and a groove located between the first arm and the second arm; and a plurality of contact pads. The plurality of contact pads includes: N contact pads disposed on the second body portion adjacent to the first body portion, where N is an integer greater than 2; M contact pads disposed at the distal ends of the first arm and the second arm, respectively, where M is an integer greater than 1; P contact pads, where P is an integer greater than 1; and Q contact pads, where Q is an integer greater than 1. The P contact pads and the Q contact pads are located on the first arm and the second arm between the N contact pads and the M contact pads.

[0008] Among other features, the body includes (N+M+P+Q) cavities for accommodating the plurality of contact pads. The N, M, P, and Q contact pads are made of an elastomer. The end effector is made of one or more materials comprising alumina (Al2O3), sapphire (Al2O3), silicon carbide (SiC), silicon nitride (SiN), aluminum nitride (AlN), graphite, and molybdenum (Mo). The end effector is made of alumina (Al2O3).

[0009] Among other features, N=3 and the N contact pads are evenly spaced apart from each other on the second body portion.

[0010] Among other features, N=4 and the N contact pads are evenly spaced apart from each other on the second body portion.

[0011] Among other features, the end effector has a thickness ranging from 0.070” to 0.090”. The heights of the N and M contact pads are greater than the heights of the P and Q contact pads.

[0012] Among other features, the heights of the N and M contact pads are in the range of 0.015” to 0.060”. The heights of the P and Q contact pads are in the range of 0.010” to 0.040”. The heights of the N and M contact pads are greater than the heights of the P and Q contact pads.

[0013] Among other features, the P contact pads and the Q contact pads are arranged along a circle having a first radius, and the N contact pads and the M contact pads are arranged along a circle having a second radius, which is larger than the first radius. The third radius of the substrate supported by the end effector is larger than both the first and second radii. The first body portion has a first thickness, and the second body portion has a second thickness that is smaller than the first thickness.

[0014] A substrate delivery system for a substrate processing chamber includes a robotic arm with a wrist. An end effector is connected to the wrist and includes a body, a first arm and a second arm extending from the body, and a plurality of contact pads configured to support a substrate above the body. A lifting pin is configured to extend over the substrate support and retract. The processing chamber includes a chamber port. A controller is configured to execute a first delivery sequence to deliver the substrate onto the substrate support. The first delivery sequence includes: loading the substrate onto the end effector with the robotic arm;, as the lifting pin retracts, moving the substrate and the end effector through the chamber port to a position above the substrate support with the robotic arm; extending the lifting pin; lowering the substrate onto the lifting pin with the end effector; and retracting the end effector through the chamber port with the robotic arm.

[0015] Among other features, the processing chamber further includes a chamber liner containing a chamber liner groove. The controller is configured to: allow the substrate and the end effector to pass through the chamber port and the chamber liner groove to reach a position above the substrate support; and to remove the end effector through the chamber port and the chamber liner groove.

[0016] Among other features, the controller is further configured to execute a second transfer sequence to retrieve the substrate from the substrate support. The second transfer sequence includes: extending the lifting pin to raise the substrate above the substrate support; moving the robotic arm to position the end effector between the substrate support and the substrate; raising the end effector; lowering the lifting pin; and removing the substrate through the chamber port.

[0017] Among other features, the body of the end effector includes: a first body portion configured to connect to the wrist; and a second body portion extending from the first body portion and including a first arm, a second arm, and a groove located between the first arm and the second arm. The plurality of contact pads includes: N contact pads disposed on the second body portion adjacent to the first body portion, where N is an integer greater than 2; M contact pads disposed at the distal ends of the first arm and the second arm, respectively, where M is an integer greater than 1; P contact pads, where P is an integer greater than 1; and Q contact pads, where Q is an integer greater than 1. The P contact pads and the Q contact pads are located on the first arm and the second arm between the N contact pads and the M contact pads.

[0018] Among other features, the body includes (N+M+P+Q) cavities for accommodating the contact pads. The N, M, P, and Q contact pads are made of an elastomer. The end effector is made of one or more materials comprising alumina (Al2O3), sapphire (Al2O3), silicon carbide (SiC), silicon nitride (SiN), aluminum nitride (AlN), graphite, and molybdenum (Mo). The end effector is made of alumina (Al2O3).

[0019] Among other features, N=3 and the N contact pads are evenly spaced apart from each other on the second body portion.

[0020] Among other features, N=4, and the N contact pads are evenly spaced apart from each other on the second body portion. The end effector has a thickness in the range of 0.070” to 0.090”.

[0021] Among other features, the heights of the N and M contact pads are greater than the heights of the P and Q contact pads.

[0022] Among other features, the heights of the N and M contact pads are in the range of 0.015” to 0.060”. The heights of the P and Q contact pads are in the range of 0.010” to 0.040”. The heights of the N and M contact pads are greater than the heights of the P and Q contact pads.

[0023] Among other features, the P contact pads and the Q contact pads are arranged along a circle having a first radius, and the N contact pads and the M contact pads are arranged along a circle having a second radius, which is larger than the first radius. The third radius of the substrate supported by the end effector is larger than both the first and second radii.

[0024] Among other features, the first main body portion has a first thickness, and the second main body portion has a second thickness that is less than the first thickness.

[0025] The further scope of the applicability of this disclosure will become apparent from the detailed description, claims, and drawings. The detailed description and specific examples are for illustrative purposes only and are not intended to limit the scope of this disclosure. Attached Figure Description

[0026] This disclosure will be more fully understood from the detailed description and accompanying drawings, in which: Figure 1A is a functional block diagram of an example of a processing chamber for processing a substrate according to the present disclosure; Figure 1B is a perspective view of the substrate support, the grooved chamber liner, and the chamber port according to the present disclosure. Figure 1C is a perspective view of the substrate support, the grooved chamber liner, the chamber port, and the end effector connected to the wrist of the robotic arm according to the present disclosure. Figure 2 is a simplified cross-sectional view of an example of an end effector conveying a standard substrate with minimal or no bending to a processing chamber; Figures 3A to 3D show examples of various types of bending on non-standard substrates; Figure 4 is a simplified cross-sectional view of an example of an end effector conveying a non-standard substrate into a processing chamber; Figures 5A to 5D illustrate steps of an example substrate transfer sequence for transferring a non-standard substrate to a clearance-constrained processing chamber according to the present disclosure. Figure 6 is a flowchart of an example of a method for conveying a non-standard substrate to a processing chamber according to the present disclosure; Figure 7A is a plan view illustrating an example of an end effector including a contact pad according to the present disclosure; Figure 7B is a side cross-sectional view of an example of a contact pad; and Figures 7C to 7E are plan views illustrating examples of end effectors including contact pads according to this disclosure.

[0027] In the accompanying drawings, reference numerals may be used repeatedly to identify similar and / or identical elements. Detailed Implementation

[0028] Substrate processing systems can be optimized for standard substrates (e.g., silicon substrates) with standard weight, thickness, and / or curvature. The dimensions of the substrate processing system can be specified with relatively tight tolerances for processing standard substrates. Clearance issues may arise when the processing chamber is used for non-standard substrates (e.g., thicker, heavier, and / or more curved than standard substrates). In some examples, the substrate may be approximately 2 to 5 times the standard weight, 1.5 to 3 times the standard thickness, and have a curvature of up to + / -4 mm (e.g., + / -2 mm curvature).

[0029] Due to the increased weight / deformation, non-standard substrates cause increased deflection of the end effector (e.g., 2 to 5 times the standard deflection). This deflection increases the difference between the swept volume and the standard swept volume during robotic arm movement. The swept volume refers to the volume traversed by the end effector, robotic arm wrist, and / or substrate during substrate transfer; the swept volume needs to remain unobstructed to avoid collisions. Existing robotic arm / end effector and / or processing chamber designs may not provide sufficient vertical clearance to allow for the handling of non-standard substrates using existing transfer sequences, robotic arms, end effectors, and / or contact pad arrangements.

[0030] The substrate transfer sequence performed by the robotic arm includes z-axis transfer (or Z-transfer) and single-plane transfer. When using Z-transfer, a lifting pin extends, and the robotic arm / end-effector moves the substrate into the processing chamber above the extended lifting pin. Once the robotic arm / end-effector is correctly positioned in the processing chamber, it moves downwards (e.g., along the z-axis) to transfer the substrate onto the lifting pin. The robotic arm / end-effector then retracts and exits the processing chamber. Z-transfer pickup is the reverse of these steps.

[0031] When using single-plane transfer, the robotic arm / end-effector coordinates the movement of a lifting pin to place the substrate. In other words, the robotic arm / end-effector moves the substrate into the processing chamber, and the lifting pin is in the retracted position. The lifting pin extends to raise the substrate above the end-effector. Then, the robotic arm / end-effector retracts and exits the processing chamber. Single-plane transfer pickup performs these steps in reverse.

[0032] For single-plane transfer, the robotic arm / end-effector moves into and out of the processing chamber at a single height, with no z-axis movement inside the chamber. This method reduces the total vertical backlash required for the robotic arm / end-effector to perform the transfer. Single-plane transfer trades increased runtime (due to the coordination of the robotic arm and lifting pin movements) for reduced vertical backlash.

[0033] Given the stringent dimensional requirements, the thickness of the end effector is optimized for a standard substrate. End effectors are typically made of stainless steel. The end effector cannot be too thin because the weight of the substrate payload on the end effector would cause deflection. This deflection increases the required vertical clearance. Compared to Z-transfer, this deflection also limits the edge ring height when using single-plane transfer. In other words, when using Z-transfer, if end effector payload deflection occurs and the end effector is above the protruding lifting pin, the deflection will not affect the edge ring height.

[0034] Due to the available vertical clearance dimensions of the processing chamber, transferring non-standard substrates using existing end effector and substrate transfer sequences may be impossible. For example, when using Z-transfer, there may not be sufficient clearance to move the substrate above the lift pin into the processing chamber and past the upper edge of the opening in the chamber liner. When the substrate is on the lift pin, the substrate bending downwards may require moving the end effector even lower, further reducing the clearance between the end effector and the edge ring. It may not be possible to reduce deflection by making the end effector thicker (to counteract payload deflection) without significantly limiting the edge ring height. Using single-plane transfer could reduce the obstruction problem at the upper edge of the chamber liner slot. However, the edge ring height is strictly limited by the lift pin height, and the end effector may contact the substrate support due to deflection caused by the end effector's substrate.

[0035] To mitigate the aforementioned clearance issues, the end effector and substrate transfer sequence according to this disclosure allow the processing chamber (with strict dimensions for standard substrates) to be used for non-standard substrate dimensions that are thicker, heavier, and / or have increased curvature. The substrate transfer sequence according to this disclosure includes a hybrid of Z-transfer and single-plane motion.

[0036] During the mixed substrate transfer, the substrate is moved into the processing chamber with the lifting pin in the retracted position. This allows the substrate to move into the processing chamber at a reduced height, thus allowing the substrate to pass over the upper edge of the chamber bushing groove without the risk of colliding with the protruding lifting pin.

[0037] Height movement can occur at a sufficiently high position so that payload deflection does not limit the edge ring height. Once the end effector is in place, the lifting pin extends, and the robotic arm moves downward, transferring the substrate from the end effector to the lifting pin. The end effector retracts from below the substrate and exits the processing chamber. The lifting pin lowers the substrate onto the substrate support.

[0038] The substrate, which bends downwards when situated on the lifting pin, limits the height of the edge ring. However, this limitation on the edge ring height is less severe than in the case of pure single-plane transfer movement. Additional clearance can be provided by using a material harder than stainless steel to reduce end effector deflection.

[0039] The end effector includes additional contact pads configured to support the substrate under varying bending conditions. Contact pads closer to the center of the end effector support a bowl-shaped substrate, while contact pads closer to the substrate edge support a dome-shaped substrate. Half-pipe and saddle-shaped bends and warped substrates are supported by a combination of radially inner and radially outer contact pads.

[0040] Hybrid transfer sequences avoid or limit the need to increase the height of chamber bushing slots or other openings (e.g., slot valves, chamber bodies) for substrate transfer. When combined with an end effector that allows the substrate to bend upwards off the nominal support plane, the required vertical clearance between the substrate and the edge ring on the lifting pin is minimized. This allows for a wider range of edge ring heights at a given lifting pin height and enables greater tuning of the plasma effects at the substrate edge.

[0041] Referring now to FIG1A, an example of a substrate processing system 10 utilizing an end effector and substrate transfer sequence according to the present disclosure is shown. Although a particular type of substrate processing system is shown for illustrative purposes, other types of substrate processing systems may be used.

[0042] The substrate processing system 10 includes a processing chamber 18. The processing chamber 18 further includes a substrate support (or base) 20 for supporting a substrate 32. The substrate support 20 may include an electrostatic chuck (ESC), a mechanical chuck, or other types of chuck. In some examples, the substrate support 20 includes a base plate 22 (which includes cooling channels 24), a bonding layer 28, and a top plate 26. An edge ring 34 is disposed around the substrate support 20. The top plate 26 may include a resistance heater for heating the substrate and / or a conductor for electrostatically clamping the substrate 32.

[0043] Processing chamber 18 includes a chamber port 37, a chamber door 38, and an actuator 39 for selectively moving the chamber door 38 to open and close the chamber port 37. A chamber liner 33 surrounds the substrate support 20 and includes a groove 35 disposed near and aligned with the chamber port 37 to allow for the transport and removal of the substrate. In some examples, the chamber port 37 of processing chamber 18 is attached to a vacuum transfer module (not shown).

[0044] Process gases are supplied to processing chamber 18, and plasma 40 may be generated within processing chamber 18 during substrate processing (e.g., deposition or etching). If plasma is used, the substrate processing system 10 includes an RF plasma generator 50. In some examples, the RF plasma generator 50 includes an RF source 52, a pulse circuit 54, and a tuning circuit 58. The pulse circuit 54 controls the envelope of the RF signal and changes the duty cycle of the envelope during operation. It should be understood that the pulse circuit 54 and the RF source 52 may be combined or separated.

[0045] Tuning circuit 58 can be directly connected to one or more coils 64. In some examples, a single induction coil is used. In other examples, multiple induction coils are used, each of which includes one or more conductors. Tuning circuit 58 tunes the output of RF source 52 to a desired frequency and / or desired phase, matches the impedance of coil 64, and / or distributes power among coils 64.

[0046] In some examples, an inflation chamber 44 may be arranged between the coil 64 and the dielectric window 42 to control the temperature of the dielectric window 42 using a flow of hot and / or cold gas (e.g., air). The dielectric window 42 is arranged along one side of the processing chamber.

[0047] Gas delivery system 70 can be used to supply process gas mixtures to processing chamber 18. Gas delivery system 70 may include a process gas source, a carrier gas source and / or an inert gas source 72, a gas metering system 74 (e.g., valves and mass flow controllers), and a manifold 76 for mixing the gases. Gas delivery system 80 can be used to deliver gas 82 to charging chamber 44 via valve 81. This gas may include cooling gas (e.g., air) for cooling coil 64 and dielectric window 42.

[0048] Temperature controller 110 can be used to control the heating / cooling of substrate support 20 to a predetermined temperature. For example, temperature controller 110 can be used to control the cooling fluid flow of resistance heaters and / or cooling channels 24 in top plate 26.

[0049] The discharge system 90 includes a valve 92 and a pump 94 to control the pressure within the processing chamber 18 and / or remove reactants from the processing chamber 18 by sweeping or evacuating. The RF bias generator 120 includes one or more RF sources 124, a pulse circuit 128, and a bias matching circuit 132 to selectively provide RF bias to the substrate support 20 when needed.

[0050] A robotic arm 140, including an end effector 142, performs a mixed substrate transfer sequence, as described further below, to transport substrate 32 to processing chamber 18 for processing and to remove substrate 32 from processing chamber 18 after processing. A controller 150 is used to control the etching process. The controller 150 monitors system parameters and controls the delivery, excitation, maintenance, and / or quenching of the plasma (if used), RF bias (if used), substrate temperature, reactant removal, cooling gas supply, pressure, etc. The controller 150 can also be used to control the actuator 39 at chamber port 37 and the robotic arm 140.

[0051] Referring now to Figures 1B and 1C, an example of a processing chamber with a chamber liner (having a chamber bushing groove) is shown. In Figure 1B, the upper surface 200 of the substrate support is surrounded by an edge ring 210. The chamber liner 220 includes spaced-apart openings 222 and a chamber bushing groove 221, the chamber bushing groove 221 including an outer groove region 224, a middle groove region 226, and an inner groove region 227. In some examples, the outer groove region 224 may be narrower in the vertical direction than the middle groove region 226. In some examples, the middle groove region 226 may be narrower in the vertical direction than the inner groove region 227.

[0052] The inner tank region 227 includes a lower edge 228 and an upper edge 229. The inner surface 230 of the processing chamber includes a chamber port 232. As will be further described below, a robotic arm / end effector moves the substrate through the chamber port 232 and the chamber bushing groove 221 into the processing chamber.

[0053] In Figure 1C, the wrist 250 of the robotic arm includes a first mounting fastener 252, which includes one or more fasteners 254 for connecting the first mounting fastener 252 to a second mounting fastener 260. The one or more fasteners 264 connect the second mounting fastener 260 to an end effector 270. The end effector 270 includes one or more contact pads 272 extending above its surface.

[0054] Referring now to Figure 2, the upper edge 310 and lower edge 312 of the chamber bushing groove 316 are shown. The wrist 319 and the end effector 320, including the contact pad 328, support the substrate 334 during Z-transfer. The pin 352 extends before the end effector 320 transports the substrate 334 to a position above the substrate support 348 and the edge ring 344. Because the substrate 334 is a standard substrate, the clearance between the upper edge 310 and the upper edge of the lifting pin 352 is less restricted compared to non-standard substrates.

[0055] The substrate 334 is conveyed onto the substrate support 348, and the substrate 334, end effector 320, or wrist 319 does not contact any component of the processing chamber. A chamber bushing groove 316 defines a narrow opening through which the substrate is conveyed and picked up. Figure 2 shows the dimensions between the lower surface of the end effector 320 and the upper surface of the edge ring 344. A The dimensions between the upper surface of substrate 334 and the upper edge of chamber bushing groove 316 are shown. B The dimensions between the lower surface of substrate 334 and the lower edge of chamber bushing groove 316 are shown. C The dimensions between the lower edge of the wrist 319 and the lower edge of the chamber bushing groove 316 are shown. D When using non-standard substrates, some of these dimensions may have negative values ​​(corresponding to insufficient clearance) (unless the end effector and / or substrate delivery sequence is used as described herein).

[0056] Referring now to Figures 3A to 3D, various examples of substrate bending are shown. In Figure 3A, a substrate 334-1 with an umbrella-shaped bend (e.g., a spherical bend pointing upwards) is shown. In Figure 3B, a substrate 334-2 with a bowl-shaped bend (e.g., a 2mm spherical bend pointing downwards) is shown. Other types of bending include semi-tubular or chip-shaped bends. In Figure 3C, a substrate 334-3 with a semi-tubular bend (e.g., including bends upwards or downwards on one axis) is shown. In Figure 3D, a substrate 334-4 with a chip-shaped bend (e.g., spherical curvature in opposite directions on orthogonal axes) is shown.

[0057] In addition to bending, the substrate weight may be approximately 2 to 5 times the nominal weight of the substrate (e.g., in some examples, the nominal weight is approximately 100g to 150g (e.g., 125g)), and the substrate thickness may be approximately 1.5 to 3 times the nominal thickness of the substrate (e.g., the nominal thickness is in the range of 700μm to 900μm (e.g., 800μm)). The increased weight of the non-standard substrate leads to increased deflection of the end effector, thus requiring a larger vertical clearance to move the non-standard substrate into and out of the processing chamber.

[0058] Referring now to Figure 4, when processing non-standard substrates, the substrate curvature (plus the end effector deflection) may exceed the available clearance of the edge ring, chamber bushing groove, or other structures (e.g., the dimensions shown above). A , B , C and / or D Due to these stringent dimensions, the weight, thickness, or curvature of non-standard substrates may prevent them from being processed in the processing chamber.

[0059] Referring now to Figures 5A through 5D, a wafer transfer sequence according to the present disclosure is illustrated. In Figure 5A, with the lift pin 352 retracted, the wrist 319 and end effector 320 move the substrate 334' (e.g., a non-standard substrate) through the chamber bushing slot 326 into the processing chamber and above the edge ring 344. In Figures 5B and 5C, when the end effector 320 is above the substrate support 348 (after passing the chamber bushing slot 316), the lift pin 352 extends and the end effector 320 retracts to raise the substrate 344' above the end effector 320. In Figure 5D, the end effector 320 retracts from the processing chamber. The substrate 344' is then lowered onto the substrate support 348 via the lift pin 352. The procedure is reversed when the substrate 344' is picked up.

[0060] To provide context, when the end effector is used with the hybrid delivery sequence of Figures 5A through 5D for a non-standard substrate, the exemplary processing chamber is provided with dimensions.A , B , C and D Example (as shown in Figure 4). Note that Z-transfer or single-plane transfer is not possible for non-standard substrates due to obstruction from the upper and lower edges and / or edge rings of the chamber bushing groove. In some examples, the dimensions... A The root sum squared (RSS) tolerance is in the range of 0.025” to 0.14” (e.g., 0.070”). In some examples, the dimensions... B The RSS tolerance value is in the range of 0.010” to 0.090” (e.g., 0.050”). In some examples, the size... C The RSS tolerance value is in the range of 0.025” to 0.13” (e.g., 0.065”). In some examples, the RSS tolerance value of dimension D is in the range of 0.12” to 0.24” (e.g., 0.181”).

[0061] Referring now to Figure 6, a method 400 for performing a substrate transfer sequence for a non-standard substrate is shown. At 410, the substrate is loaded onto an end effector. At 414, the end effector and substrate pass through the chamber port and chamber bushing slot, with the lifting pin in a retracted position. The height of the end effector allows the substrate to pass over the upper edge of the chamber bushing slot. At 418, the lifting pin moves to an extended position to raise the substrate above the end effector, and at 422, the end effector moves downwards. In some examples, the movements of the lifting pin and the robotic arm overlap in time or occur sequentially.

[0062] At 426, the end effector is removed from the processing chamber through the chamber bushing groove. At 430, the lifting pin retracts to place the substrate on the substrate support, and substrate processing can begin. At 434, the method determines whether the process is complete. If 434 is not complete, the method returns to 434. If 434 is complete, the method continues to 440.

[0063] When processing is complete, at 440, the lifting pin is moved to the extended position to raise the substrate above the substrate support. At 444, the end effector is inserted through the chamber bushing groove and chamber port into the position between the substrate and the substrate support. At 448, the end effector moves upward to lift the substrate away from the lifting pin. At 452, the lifting pin moves to the retracted position. In some examples, the movements of the lifting pin and the robotic arm overlap in time or occur sequentially.

[0064] At 456, the robotic arm / end effector retracts through the chamber bushing slot and chamber port. At 460, the method determines whether another substrate will be processed. If 460 is yes, the method returns to 410. Otherwise, the method terminates.

[0065] Referring now to Figures 7A to 7D, several examples of end effectors with different contact pad patterns are shown to handle standard and non-standard substrates. In Figure 7A, end effector 500 includes a body 510. The beveled edge 514 of end effector 500 transitions downward from a first body portion 515 having a first thickness to a second body portion 517 having a second thickness less than the first thickness. In some examples, end effector 500 includes an elongated slot 512 arranged along the edge of the first body portion to receive a fastener for attaching the end effector to a wrist. In some examples, the difference between the first and second thicknesses is approximately equal to the height of an adjacent contact pad (e.g., contact pad 540 described below).

[0066] Having radius R The substrate 518 is supported on a plurality of contact pads 540, 542, 544, and 548 above the second body portion 517. The second body portion 517 includes a groove 524 extending between the first arm 520 and the second arm 522. In some examples, the groove 524 is bottle-shaped. In some examples, the groove 524 provides clearance for one or more lifting pins during substrate transfer (e.g., allowing the lifting pins to extend when the end effector is inserted into or removed from the processing chamber).

[0067] In some examples, the first body portion 515 is connected to the wrist of the robotic arm. A first arm 520 and a second arm 522 extend from the second body portion 517. The slot 524 includes a first slot portion 525 having a rounded rectangular shape and a second slot portion 527 having a rounded trapezoidal shape. The first slot portion 525 is narrower in a first direction (perpendicular to the longitudinal direction of the end effector) than the second slot portion 527.

[0068] The end effector 500 includes a set of contact pads 540, 542, 544, and 548 arranged in a pattern to support different contact positions on standard and non-standard substrates. N contact pads 540 and M contact pads 548 are located on opposite sides of substrate 518, near the radial outer edge of the substrate, where N is an integer greater than 2 and M is an integer greater than 1. The N contact pads 540 are located adjacent to the inclined plane 514 and radially inward relative to the inclined plane 514. The M contact pads 548 are located near the distal ends of the first arm 520 and the second arm 522. In some examples, the N contact pads 540 and M contact pads 548 are located at approximately the same radial distance from the center point 529 of substrate 518 (when substrate 518 is arranged on end effector 500). r2 Place.

[0069] P contact pads 542 and Q contact pads 544 are located near the center of substrate 518, where P and Q are integers greater than 1. In some examples, the P contact pads 542 and Q contact pads 544 are located at approximately the same radial distance from the center point 529 of substrate 518 (when substrate 518 is on end effector 500). r1 In some examples, the N contact pads 540 are evenly spaced from each other. As used herein, this approximately means a difference of + / - 5%. In the example of Figure 7A, N equals 3, and M, P, and Q equal 2.

[0070] Increasing the number of contact pads on the end effector 500 (e.g., from 4 contact pads (located near the edge of the substrate support) to 9 contact pads as shown in FIG. 7A) improves protection against non-standard substrates. For example, P contact pads 542 and Q contact pads 544 are configured to prevent cup-shaped substrates from contacting the end effector 500. N contact pads 540 and M contact pads 548 are configured to prevent umbrella-shaped substrates from contacting the end effector. While fewer, higher contact pads can be used, using higher contact pads requires reducing the thickness of the edge ring and / or the thickness of the end effector.

[0071] In some examples, the end effector 500 has a thickness ranging from 0.070” to 0.090” (e.g., 0.080”). In some examples, P contact pads 542 and Q contact pads 544 (e.g., radially inner contact pads) have a height ranging from 0.010” to 0.040” (e.g., 0.020”). In some examples, N contact pads 540 and M contact pads 548 (e.g., radially outer contact pads) have a height ranging from 0.015” to 0.060” (e.g., 0.030”). In other words, the outer contact pads are thicker than the inner contact pads in the z-axis direction. In some examples, the height of the inner contact pads above the end effector is in the range of 25% to 100% of the height of the outer contact pads.

[0072] In some examples, the plurality of contact pads 540, 542, 544, and 548 are made of the same material as the end effector 500 and are integrally formed with the end effector 500. In other examples, the contact pads 540, 542, 544, and 548 are made of a different material than the end effector 500. In some examples, the plurality of contact pads 540, 542, 544, and 548 are made of a chemically resistant, durable, and flexible material, such as an elastomer.

[0073] In some examples, contact pads 542 and 544 are located at a radius of r1 On the outer circumference of the reference circle, the reference circle is concentric with the substrate 518 having a diameter when it is loaded, wherein the radius... r1Less than or equal to 35%, 40%, 45%, or 50% of the radius R of substrate 518. In some examples, contact pads 540 and 548 are located at a radius of... r2 On the outer circumference of the reference circle, the reference circle is concentric with the substrate 518 having a diameter when it is loaded, wherein the radius... r2 Greater than or equal to 75%, 80%, 85%, or 90% of the radius of substrate 518.

[0074] Figure 7B shows an example of a contact pad 550. The contact pad 550 includes a head 552 and a stem 553 extending from the head 552. In this example, the head 552 of the contact pad 550 has a circular cross-section in a plan view (side view shown in Figure 7B). The stem 553 includes a cavity 555 extending along the z-axis. The head 552 includes a first flange 554 extending radially outward from one end of the stem 553. A second flange 558 extends radially outward from the opposite end of the stem 553.

[0075] The body 510 of the end effector 500 includes a cavity 570 extending through the end effector 500 in the z-axis direction to removably receive a portion of the contact pad 550. The upper end of the cavity 570 includes a flange 574 extending radially inward from the radially inner surface of the cavity 570 into the cavity 570. During insertion of the contact pad 550 into the cavity 570, force is applied to cause a second flange portion 558 to pass through an opening 571 in the flange 574 into the cavity 570 and reach a position below the flange 574 to hold the contact pad 550 in place during use.

[0076] In some examples, the diameters of the first flange portion 554 and the second flange portion 558 of the contact pad 550 are larger than the diameter of the opening 571 in the flange 574. In some examples, the diameter of the first flange portion 554 is larger than the diameter of the second flange portion 558. The diameter of the first flange portion 554 is larger than the diameter of the cavity portion 570. The diameter of the second flange portion 558 is larger than the diameter of the opening 571 but smaller than the diameter of the cavity 570. The diameter of the rod portion 553 is less than or equal to the diameter of the opening 571.

[0077] In Figure 7C, the end effector 578 includes N=4 contact pads 540. In some examples, the N contact pads 540 are arranged along a radius... r2 The circumferential lines at each point are evenly spaced apart. It should be understood that additional contact pads (N=5 or greater) may be used.

[0078] In Figure 7D, the end effector 580 includes an arcuate contact pad 540A, instead of the N contact pads 540 shown in Figures 7A and 7C. The arcuate contact pad 540A includes an arcuate upper portion 782 as shown in Figure 7D. In some examples, the side section (e.g., transverse to the circumference including the arcuate upper portion) is similar to the cross section shown in Figure 7B.

[0079] I understand. r1 and r2 The value can be relative to R Changes. In Figure 7E, r1’ > r1 Outer pad (radius) r2 The inner pad (radius) is generally positioned near the radial outer edge of the substrate, with a setback distance provided to accommodate potential wafer misalignment during transport and any edge exclusion requirements. r1 The inner pad is positioned to support the bowl-shaped substrate, causing it to bend upwards away from the plane defined by the contact pad. In some examples, the inner pad is positioned at or slightly below the height of the outer pad for optimal support of the flat wafer.

[0080] In some examples, the end effector is made of a material harder than stainless steel. In other examples, the end effector is made of a material selected from the group consisting of alumina (Al₂O₃), sapphire (Al₂O₃), silicon carbide (SiC), silicon nitride (SiN), aluminum nitride (AlN), graphite, and molybdenum. The increased stiffness of the end effector reduces end effector deflection caused by the increased substrate weight (without thickening the end effector). In other examples, a harder material is used instead, or the end effector is thickened in addition to using a harder material.

[0081] The foregoing description is merely illustrative in nature and is in no way intended to limit this disclosure, its application, or its use. The broad teachings of this disclosure can be implemented in various forms. Therefore, while this disclosure includes specific examples, its true scope should not be so limited, as other modifications will become apparent upon examination of the drawings, specification, and appended claims. It should be understood that one or more steps in the method may be performed in different orders (or simultaneously) without altering the principles of this disclosure. Furthermore, while each embodiment is described above as having certain features, any one or more of those features described relative to any embodiment of this disclosure may be implemented in and / or combined with features of any other embodiment, even if such combination is not explicitly described. In other words, the described embodiments are not mutually exclusive, and substitution of one or more embodiments for each other remains within the scope of this disclosure.

[0082] Various terms are used to describe spatial and functional relationships between elements (e.g., between modules, between circuit elements, between semiconductor layers, etc.), including “connection,” “joint,” “coupled,” “adjacent,” “next to,” “on top of,” “above,” “below,” and “set.” Unless the relationship between the first and second elements is explicitly described as “direct,” the relationship described in the above disclosure can be a direct relationship, where no other intermediate element exists between the first and second elements, but it can also be an indirect relationship, where one or more intermediate elements exist between the first and second elements (spatially or functionally). As used herein, the phrase “at least one of A, B, and C” should be interpreted as meaning the use of a non-exclusive logical OR (A or B or C) logic and should not be interpreted as meaning “at least one of A, at least one of B, and at least one of C.”

[0083] In some implementations, the controller is part of a system, which may be part of the examples described above. Such a system may include semiconductor processing equipment, which includes one or more processing tools, one or more chambers, one or more platforms for processing, and / or specific processing components (wafer pedestals, gas flow systems, etc.). These systems may be integrated with electronics for controlling their operation before, during, and after the processing of semiconductor wafers or substrates. The electronics may be referred to as a “controller”, which can control various components or sub-components of one or more systems. Depending on the processing requirements and / or system type, the controller may be programmed to control any process disclosed herein, including the delivery of processing gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, position and operation settings, wafer transfer tools and other transfer tools, and / or loading locks that are connected to or docked with a specific system.

[0084] In a broad sense, a controller can be defined as an electronic device having various integrated circuits, logic, memory, and / or software for receiving instructions, issuing instructions, controlling operations, enabling cleaning operations, enabling endpoint measurements, etc. Integrated circuits can include chips in the form of firmware storing program instructions, digital signal processors (DSPs), chips defined as application-specific integrated circuits (ASICs), and / or one or more microprocessors or microcontrollers that execute program instructions (e.g., software). Program instructions can be instructions sent to the controller in the form of various individual settings (or program files), which define operating parameters for performing a specific process on or for a semiconductor wafer or system. In some embodiments, operating parameters can be part of a recipe defined by a process engineer to complete one or more processing steps during the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or wafer dies.

[0085] In some implementations, the controller may be part of or coupled to a computer integrated with, coupled to, or otherwise networked to the system, or a combination thereof. For example, the controller may be in the “cloud” or be all or part of a fab host system, allowing remote access to wafer processing. The computer may enable remote access to the system to monitor the current progress of manufacturing operations, examine the history of past manufacturing operations, examine trends or performance criteria of multiple manufacturing operations, change parameters of the current process, set processing steps to follow the current process, or start a new process. In some examples, a remote computer (e.g., a server) may provide process recipes to the system via a network (which may include a local network or the Internet). The remote computer may include a user interface that enables input or programming of parameters and / or settings, which are then sent from the remote computer to the system. In some examples, the controller receives instructions in the form of data specifying parameters for each processing step to be performed during one or more operations. It should be understood that the parameters may be specific to the type of process to be performed and the type of tool, to which the controller is configured to interface with or control the tool. Therefore, as described above, a controller can be distributed, for example, by comprising one or more discrete controllers networked together and operating toward a common purpose (such as the process and control described herein). An example of a distributed controller for such a purpose is one or more integrated circuits on-site communicating with one or more integrated circuits remotely (e.g., at the platform level or as part of a remote computer), which together control the process on-site.

[0086] Exemplary systems may include, but are not limited to, plasma etching chambers or modules, deposition chambers or modules, rotary rinsing chambers or modules, metal plating chambers or modules, cleaning chambers or modules, chamfering edge etching chambers or modules, physical vapor deposition (PVD) chambers or modules, chemical vapor deposition (CVD) chambers or modules, atomic layer deposition (ALD) chambers or modules, atomic layer etching (ALE) chambers or modules, ion implantation chambers or modules, track chambers or modules, and any other semiconductor processing systems that may be associated with or used for the manufacture and / or preparation of semiconductor wafers.

[0087] As described above, depending on one or more processing steps to be performed by the tool, the controller may communicate with one or more other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout the plant, a host computer, another controller, or tools used in the transport of materials to and from the tool location and / or loading port in the semiconductor manufacturing plant.

Claims

1. An end effector for a substrate processing system, comprising: a body comprising: a first body portion configured to be connected to a wrist portion of a robot arm; a second body portion extending from the first body portion and comprising a first arm, a second arm, and a slot between the first arm and the second arm; and a plurality of contact pads comprising: N contact pads arranged on the second body portion proximate to the first body portion, where N is an integer greater than 2; M contact pads arranged respectively at distal ends of the first arm and the second arm, where M is an integer greater than 1; P contact pads, where P is an integer greater than 1; and Q contact pads, where Q is an integer greater than 1, where the P contact pads and the Q contact pads are on the first arm and the second arm between the N contact pads and the M contact pads.

2. The end effector of claim 1, wherein the body comprises (N+M+P+Q) cavities for housing the plurality of contact pads.

3. The end effector of claim 1, wherein the N contact pads, the M contact pads, the P contact pads, and the Q contact pads are made of an elastomer.

4. The end effector of claim 1, wherein the end effector is made of one or more materials comprising aluminum oxide (AI2O3), sapphire (AI2O3), silicon carbide (SiC), silicon nitride (SiN), aluminum nitride (AIN), graphite, and molybdenum (Mo).

5. The end effector of claim 1, wherein the end effector is made of aluminum oxide (AI2O3).

6. The end effector of claim 1, wherein N=3 and wherein the N contact pads are uniformly spaced from each other on the second body portion.

7. The end effector of claim 1, wherein N=4 and wherein the N contact pads are uniformly spaced from each other on the second body portion.

8. The end effector of claim 1, wherein the end effector has a thickness in a range of 0.070” to 0.090”.

9. The end effector of claim 1, wherein a height of the N contact pads and the M contact pads is greater than a height of the P contact pads and the Q contact pads.

10. The end effector of claim 1, wherein: a height of the N contact pads and the M contact pads is in a range of 0.015” to 0.060”; and a height of the P contact pads and the Q contact pads is in a range of 0.010” to 0.040”; and the height of the N contact pads and the M contact pads is greater than the height of the P contact pads and the Q contact pads.

11. The end effector of claim 1, wherein the P contact pads and the Q contact pads are arranged along a circle having a first radius, and the N contact pads and the M contact pads are arranged along a circle having a second radius, the second radius being greater than the first radius.

12. The end effector of claim 11, wherein a third radius of a substrate supported by the end effector is greater than the first radius and the second radius.

13. The end effector of claim 1, wherein the first body portion has a first thickness and the second body portion has a second thickness that is less than the first thickness.

14. A substrate handling system for a substrate processing chamber, comprising: a robot arm including a wrist portion; an end effector connected to the wrist portion and including a body, a first arm and a second arm extending from the body, and a plurality of contact pads configured to support a substrate above the body; a substrate support; a lift pin configured to extend over the substrate support and retract; a processing chamber including a chamber port; and a controller configured to perform a first transfer sequence to transport the substrate onto the substrate support, wherein the first transfer sequence includes: causing the robot arm to load the substrate onto the end effector; causing the robot arm to pass the substrate and the end effector through the chamber port to a position above the substrate support while the lift pin is retracted; causing the lift pin to extend; causing the end effector to lower the substrate onto the lift pin; and causing the robot arm to retract the end effector through the chamber port.

15. The substrate handling system of claim 14, wherein: the processing chamber further includes a chamber liner including a chamber liner slot, the controller is configured to: cause the substrate and the end effector to pass through the chamber port and the chamber liner slot to the position above the substrate support; and remove the end effector through the chamber port and the chamber liner slot.

16. The substrate handling system of claim 14, wherein the controller is further configured to perform a second transfer sequence to retrieve the substrate from the substrate support, wherein the second transfer sequence includes: causing the lift pin to extend to raise the substrate above the substrate support; causing the robot arm to move the end effector between the substrate support and the substrate; causing the robot arm to raise the end effector; causing the lift pin to lower; and causing the robot arm to remove the substrate through the chamber port.

17. The substrate handling system of claim 16, wherein the body of the end effector includes: a first body portion configured to connect to the wrist portion; and a second body portion extending from the first body portion and including the first arm, the second arm, and a slot between the first arm and the second arm; and wherein the plurality of contact pads includes: N contact pads arranged on the second body portion proximate the first body portion, where N is an integer greater than 2; M contact pads arranged respectively at distal ends of the first arm and the second arm, where M is an integer greater than 1; P contact pads, where P is an integer greater than 1; and Q contact pads, where Q is an integer greater than 1. ​ wherein the P number of contact pads and the Q number of contact pads are located on the first arm and the second arm between the N number of contact pads and the M number of contact pads.

18. The substrate handling system of claim 17, wherein the body includes (N+M+P+Q) number of cavities for accommodating the contact pads.

19. The substrate handling system of claim 17, wherein the N number of contact pads, the M number of contact pads, the P number of contact pads, and the Q number of contact pads are made of an elastomer.

20. The substrate handling system of claim 17, wherein the end effector is made of one or more materials including aluminum oxide (AI2O3), sapphire (AI2O3), silicon carbide (SiC), silicon nitride (SiN), aluminum nitride (AIN), graphite, and molybdenum (Mo).

21. The substrate handling system of claim 17, wherein the end effector is made of aluminum oxide (AI2O3).

22. The substrate handling system of claim 17, wherein N = 3 and wherein the N number of contact pads are evenly spaced from each other on the second body portion.

23. The substrate handling system of claim 17, wherein N = 4 and wherein the N number of contact pads are evenly spaced from each other on the second body portion.

24. The substrate handling system of claim 17, wherein the end effector has a thickness in a range of 0.070” to 0.090”.

25. The substrate handling system of claim 17, wherein a height of the N number of contact pads and the M number of contact pads is greater than a height of the P number of contact pads and the Q number of contact pads.

26. The substrate handling system of claim 17, wherein: a height of the N number of contact pads and the M number of contact pads is in a range of 0.015” to 0.060”; and a height of the P number of contact pads and the Q number of contact pads is in a range of 0.010” to 0.040”; and the height of the N number of contact pads and the M number of contact pads is greater than the height of the P number of contact pads and the Q number of contact pads.

27. The substrate handling system of claim 17, wherein the P number of contact pads and the Q number of contact pads are arranged along a circle having a first radius, and the N number of contact pads and the M number of contact pads are arranged along a circle having a second radius, the second radius being greater than the first radius.

28. The substrate handling system of claim 27, wherein a third radius of a substrate supported by the end effector is greater than the first radius and the second radius.

29. The substrate handling system of claim 17, wherein the first body portion has a first thickness, and the second body portion has a second thickness that is less than the first thickness.

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