Pedestal and monolithic chemical vapor deposition device

Abstract

The invention provides a base and a monolithic chemical vapor deposition device. The base comprises a tray, the upper surface of which is used for bearing a wafer; the induction heating assembly is used for heating the tray in an electromagnetic induction heating mode; the induction heating assembly is composed of a first induction coil located on the outer ring and at least one second induction coil located on the inner ring, and current in the first induction coil and current in the at least one second induction coil are the same in frequency and phase. The projection of the edge of the wafer is located on the innermost coil of the first induction coil. The invention is used for improving the temperature uniformity of the central area and the edge area of the tray, and further improving the uniformity of a film deposited on a wafer.

Description

Technical Field

[0001] This invention relates to the field of semiconductor equipment technology, and in particular to a substrate and a monolithic chemical vapor deposition apparatus. Background Technology

[0002] Metal-organic chemical vapor deposition (MOCVD) is an advanced chemical vapor deposition (CVD) technology primarily used for growing high-quality, high-purity thin films and heterostructures, and is widely used, especially in the fabrication of semiconductor, optoelectronic, and microwave devices. MOCVD technology is particularly suitable for growing refractory, high-purity materials with special structures.

[0003] In an MOCVD apparatus, a heating device typically heats a tray to raise the wafer on the tray to the required growth temperature. At this high temperature, metal atoms react chemically with other chemicals in the reaction chamber (such as nitrogen from ammonia) to form a thin film on the wafer surface. As the reaction proceeds, metal atoms are continuously deposited on the substrate surface, thus forming a uniform and continuous thin film.

[0004] Common heating methods include resistance heating and induction heating. Induction heating is a process that uses the principle of electromagnetic induction to heat conductive materials. It is widely used in the chemical vapor deposition process in semiconductor manufacturing. The basic principle of induction heating is to generate an alternating magnetic field in an induction coil using an alternating current. When a conductive material is placed in this alternating magnetic field, the change in the magnetic field induces currents, or eddy currents, within the material. As these eddy currents flow within the material, the resistance converts electrical energy into heat energy, thus heating the material.

[0005] In MOCVD equipment, induction heating is typically used to heat a tray made of conductive material to provide a suitable growth temperature and environment. By placing an induction coil under the tray and passing an alternating current of a specific frequency through it, an alternating magnetic field can be generated, thereby heating the tray and the wafer on it.

[0006] However, for a single-wafer tray with a circular structure (i.e., a tray containing only one wafer), if an induction coil is used for induction heating, the magnetic field above the center region of the induction coil is weak. Therefore, the heating capacity of the induction coil to the center region of the tray is insufficient, resulting in a lower temperature in the center region of the tray. The uneven temperature of the tray will seriously affect the uniformity of the thin film deposited on the wafer to be processed.

[0007] To address the issue of low temperatures in the center area of ​​the tray, existing technologies typically divide the induction coils beneath the tray into zones and use a multi-zone controlled induction power supply to control the power of the induction coils in multiple zones, thus achieving zoned heating for a monolithic tray structure. For example... Figure 1 As shown, the induction coil includes an inner coil 211 and an outer coil 212. The inner coil 211 includes two turns and is located near the center region of the tray 213; the outer coil 212 includes six turns and is located outside the inner coil 211 and inside the edge of the tray 213. Figure 1 and 2 As shown, by adjusting the power of the inner coil 211 and the outer coil 212, the problem of the low center temperature of the tray can be solved to some extent. However, from Figure 1 and 2 As can be seen, using the multi-zone temperature-controlled induction coil in the existing technology introduces the problem of low wafer edge temperature. Summary of the Invention

[0008] The purpose of this invention is to provide a base and a monolithic chemical vapor deposition apparatus for improving the temperature uniformity of the central and edge regions of the tray, thereby improving the uniformity of the thin film deposited on the wafer.

[0009] To achieve the above objectives, the present invention is implemented through the following technical solution:

[0010] A base for a monolithic chemical vapor deposition apparatus, comprising:

[0011] A tray, the upper surface of which is used to support wafers;

[0012] An induction heating component heats the tray via electromagnetic induction heating.

[0013] The induction heating assembly consists of a first induction coil located on the outer ring and at least one second induction coil located on the inner ring, wherein the currents in the first induction coil and the at least one second induction coil are in phase and frequency; the projection of the wafer edge is located on the innermost turn of the first induction coil.

[0014] Optionally, the average current in the first induction coil is greater than the average current in the at least one second induction coil.

[0015] Optionally, in the horizontal direction, the distance between the outermost edge of the first induction coil and the edge of the wafer is greater than 20 mm.

[0016] Optionally, the distance between the outermost coil of the at least one second induction coil and the innermost coil of the first induction coil is not less than 10 mm.

[0017] Optionally, the first induction coil and the at least one second induction coil are connected to an intermediate frequency power supply with the same frequency and phase and multiple output zones.

[0018] Optionally, the upper and lower surfaces of the first induction coil and the at least one second induction coil are located on the same plane, and in the vertical direction, the distance between the upper surface of the first induction coil and the at least one second induction coil and the lower surface of the tray is 5mm-15mm.

[0019] Optionally, the lower surface of the tray has a downwardly extending boss at its center, and the induction heating assembly is arranged coaxially around the boss.

[0020] Optionally, the lower surface of the boss is lower than the lower surface of the at least one second induction coil.

[0021] Optionally, in the vertical direction, the distance between the lower surface of the boss and the lower surface of the at least one second induction coil is 2mm-10mm.

[0022] Optionally, the tray includes a body and a transfer ring, the transfer ring being positioned above the body and used to carry the wafer.

[0023] Optionally, the base further includes a rotating barrel, on which the tray is placed.

[0024] Optionally, the horizontal distance between the outermost edge of the first induction coil and the rotating barrel is 10mm-30mm.

[0025] Optionally, a gas-isolating component is provided between the rotating drum and the induction heating component, which isolates the gas flow between the induction heating component and the reaction chamber of the monolithic chemical vapor deposition apparatus.

[0026] Optionally, the air-sealing assembly includes a lower support plate, an air-sealing cylinder, and an air-sealing plate. The lower support plate is located below the induction heating assembly, the air-sealing plate is located above the induction heating assembly, the air-sealing cylinder is located on the side of the induction heating assembly, and the induction heating assembly is located within the space defined by the lower support plate, the air-sealing cylinder, and the air-sealing plate.

[0027] Optionally, the air-insulating cylinder includes a conductive material.

[0028] Optionally, a heat insulation cylinder is provided between the rotating drum and the induction heating assembly, and the heat insulation cylinder includes a conductive material.

[0029] Optionally, the surfaces of the first induction coil and the at least one second induction coil have a metal plating with an emissivity of not more than 0.3.

[0030] Optionally, the metal plating is at least one of gold, nickel-tin alloy, and high-phosphorus nickel.

[0031] A single-piece chemical vapor deposition apparatus includes a reaction chamber, wherein a base as described in any of the above descriptions is disposed within the reaction chamber, and a gas supply device is disposed opposite to the base.

[0032] Optionally, the monolithic chemical vapor deposition apparatus includes a temperature control feedback system, which adjusts the current in the induction heating component based at least on the measurements of a first temperature sensor and a second temperature sensor, the first and second temperature sensors being used to measure the temperature at the center and edge of the wafer, respectively.

[0033] Compared with the prior art, the present invention has the following advantages:

[0034] This invention features a first induction coil with independently adjustable power positioned below the outer edge of the tray to compensate for insufficient temperature in the tray's edge region. Simultaneously, at least one second induction coil is positioned in the center region of the tray. The tray is inductively heated by the multi-zone controlled induction coils, and the power distribution of each coil is individually adjusted to achieve better temperature uniformity. The currents in each induction coil are set to be in phase and frequency, enabling rapid and uniform heating of all areas of the tray. The projection of the wafer edge is positioned on the innermost coil of the first induction coil, allowing the first induction coil to control the temperature of the edge region outside the wafer on the tray. This compensates for heat loss caused by heat radiation from the edge region, increasing the temperature of the edge region and reducing the temperature difference with the center region, thereby contributing to the control of temperature uniformity at the wafer edge. Attached Figure Description

[0035] To more clearly illustrate the technical solution of the present invention, the accompanying drawings used in the description will be briefly introduced below. Obviously, the drawings described below are one embodiment of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort:

[0036] Figure 1 This is a temperature simulation diagram of the tray when using induction heating in existing technology;

[0037] Figure 2 Radial temperature distribution diagrams for trays in existing technologies and this application;

[0038] Figure 3 This is a photograph of a rotating drum in the prior art;

[0039] Figure 4 This is a structural diagram of a monolithic chemical vapor deposition apparatus according to an embodiment of the present invention;

[0040] Figure 5 This is a radial temperature distribution diagram of wafer W when the projection of the edge of wafer W is located at different positions. Detailed Implementation

[0041] The following detailed description, in conjunction with the accompanying drawings and specific embodiments, further illustrates the solution proposed by the present invention. The advantages and features of the present invention will become clearer from the following description. It should be noted that the drawings are in a very simplified form and use non-precise proportions, used only to facilitate and clearly illustrate the embodiments of the present invention. Please refer to the drawings to make the objectives, features, and advantages of the present invention more apparent and understandable. It should be understood that the structures, proportions, sizes, etc., depicted in the accompanying drawings are only for illustrative purposes to aid those skilled in the art and are not intended to limit the implementation conditions of the present invention. Therefore, they have no substantial technical significance. Any modifications to the structure, changes in proportions, or adjustments to the size, without affecting the effects and objectives achieved by the present invention, should still fall within the scope of the technical content disclosed in the present invention.

[0042] This invention provides a base and a monolithic chemical vapor deposition apparatus to improve the temperature uniformity of the central and edge regions of a tray. The base includes a tray and an induction heating assembly. The induction heating assembly includes a first induction coil located on the outer ring and at least one second induction coil located on the inner ring. The currents in all induction coils are in phase and frequency, meaning that the frequency and phase of all induction coils are kept consistent, which avoids mutual interference between different induction coils and thus prevents unstable power output. Furthermore, the power of each induction coil is individually adjustable. The first induction coil and at least one second induction coil are used to perform zoned temperature control on the edge and central regions of the tray, respectively, achieving uniform heating of all areas of the tray. Further, the projection of the edge of the wafer on the tray is located on the innermost coil of the first induction coil, so the first induction coil controls the temperature of the portion of the tray outside the wafer edge, which helps to control the temperature uniformity of the wafer edge.

[0043] Figure 4 A monolithic chemical vapor deposition apparatus is shown, such as Figure 4As shown, the monolithic chemical vapor deposition apparatus includes a reaction chamber 100, within which is a base 110 as provided in this embodiment, and a gas supply device 120 disposed opposite to the base. The gas supply device 120 is responsible for delivering process gas into the reaction chamber 100 and controlling the gas flow rate and pressure. After the process gas is introduced into the reaction chamber 100 via the gas supply device 120, it forms a downward airflow, thereby creating a process flow field around the wafer W. When the wafer W on the base 110 is heated to the temperature required for the deposition process, the process gas performs a thin film deposition reaction on the surface of the wafer W to grow a thin film on the surface of the wafer W. The base 110 can rotate around its central axis to homogenize the airflow formed by the process gas, thereby making the thin film grown on the surface of the wafer W more uniform, and thus ensuring the yield of the wafer W.

[0044] like Figure 4 As shown, the base 110 provided in this embodiment includes a tray 111 and an induction heating component 112, wherein the induction heating component 112 heats the tray 111 by electromagnetic induction heating.

[0045] The upper surface of the tray 111 is used to support the wafer W. The tray 111 is typically made of a material with good thermal conductivity, such as graphite or silicon carbide. In this embodiment, the tray 111 includes a body 1111 and a transfer ring 1112. The transfer ring 1112 is positioned above the body 1111 and is used to transfer the wafer W. The two are introduced into the output reaction chamber 100 as a whole. In other embodiments, the tray 111 may not include a transfer ring. That is, the body of the tray 111 has a groove for placing the wafer W. The wafer W is introduced into the output reaction chamber 100 alone, or the tray 111 and the wafer W are introduced into the output reaction chamber 100 as a whole.

[0046] The induction heating assembly 112 includes a first induction coil 1121 located on the outer ring and at least one second induction coil 1122 located on the inner ring. The currents in the first induction coil 1121 and the at least one second induction coil 1122 are in phase and frequency. The projection of the edge of the wafer W is located on the innermost turn of the first induction coil 1121 (e.g., ...). Figure 4 (As shown by the dashed line).

[0047] In this embodiment, the tray 111 is divided into an outer edge heating area and at least one inner central heating area. The first induction coil 1121 is used to heat the edge heating area, and the at least one second induction coil 1122 is used to heat the central heating area. The number of central heating areas can be set according to the size of the tray 111 and different process requirements.

[0048] A first induction coil 1121 with independently adjustable power is disposed below the outer edge of the tray 111 to compensate for insufficient temperature in the edge area of ​​the tray 111. It should be noted that in this embodiment, the edge heating area of ​​the tray 111 is temperature-controlled by only one first induction coil 1121. It is understood that if the first induction coil 1121 comprises multiple discontinuous coils, there will be breaks between the coils, resulting in uneven magnetic fields at the breaks, leading to uneven temperature at the edge of the tray 111. Furthermore, multiple coils require numerous solder joints, increasing the risk of water leakage when cooling the coils with water, and potentially causing arcing and coil damage in a vacuum environment. Based on these considerations, the first induction coil 1121 in this embodiment is a continuous one-turn or multi-turn coil.

[0049] In this embodiment, the first induction coil 1121 and the at least one second induction coil 1122 are connected to a multi-zone intermediate frequency power supply with the same frequency and phase. The intermediate frequency power supply can output multiple sets of currents, each with the same frequency and phase, but different current magnitudes. Thus, multiple induction coils can be synchronously controlled by a single intermediate frequency power supply, simplifying the temperature control system.

[0050] By setting the projection of the edge of the wafer W onto the innermost turn of the first induction coil 1121, the first induction coil 1121 controls the temperature of the edge region on the tray 111 located outside the wafer W, compensating for heat loss caused by heat radiation from this edge region, increasing the temperature of the edge region, and reducing the temperature difference with the center region, thereby helping to control the temperature uniformity of the wafer edge. Figure 2 As shown, the base proposed in this invention does not have the problem of low temperature in the wafer edge region compared to the prior art.

[0051] like Figure 5 As shown in (A), when the projection of the edge of the wafer W is set to be located on the innermost turn of the first induction coil 1121, the temperature at the edge of the wafer W is uniform and there is no sudden change; while as Figure 5 As shown in (B) or (C), when the projection of the edge of the wafer W is set to be located inside or outside the innermost coil of the first induction coil 1121, the temperature at the edge of the wafer W will fluctuate significantly, which is not conducive to the thin film growth at the edge of the wafer W.

[0052] It is understandable that, since the edge heating area of ​​the tray 111 radiates more heat outward, the first induction coil 1121 needs to provide more heat to the edge heating area. Therefore, the average current in the first induction coil 1121 is greater than the average current in the at least one second induction coil 1122.

[0053] In this embodiment, in the horizontal direction, the distance between the outermost edge of the first induction coil 1121 and the edge of the wafer W is greater than 20 mm. Therefore, extending the first induction coil 1121 a certain distance outward from the edge of the wafer W allows it to cover a larger area of ​​the edge of the tray 111, which helps to fully heat the edge of the tray 111 and the transfer ring 1112.

[0054] The coil turn pitch in the first induction coil 1121 and the second induction coil 1122 is generally not less than 3mm, and the width of one coil turn is generally 8mm-15mm. In this embodiment, the distance between the outermost coil of the at least one second induction coil 1122 and the innermost coil of the first induction coil 1121 is not less than 10mm. If the distance between the outermost coil of the at least one second induction coil 1122 and the innermost coil of the first induction coil 1121 is too small, the magnetic fields of the two adjacent coils with the same frequency and phase will overlap, which will cause the temperature at the edge of the wafer W to be too high.

[0055] The distance between the induction coil and the tray can affect the controlled heating temperature. By adjusting the distance between the coil and the tray 111, the heating rate and the final temperature of the wafer W can be affected. Optionally, in the vertical direction, the distance between the upper surface of the first induction coil 1121 and the at least one second induction coil 1122 and the lower surface of the tray 111 is 5mm-15mm to achieve the desired heating effect. In this embodiment, the upper and lower surfaces of the first induction coil 1121 and the at least one second induction coil 1122 are respectively located in the same plane. However, in other embodiments, the upper and lower surfaces of the first induction coil 1121 and the at least one second induction coil 1122 may not be coplanar.

[0056] By adjusting the power of at least one second induction coil 1122 and the first induction coil 1121, the problem of low wafer edge temperature was solved, and the problem of low tray center temperature could be addressed to some extent. However, compared with... Figure 2 Similar to the existing technology shown, the temperature in the tray area corresponding to the center of the wafer is still slightly lower, meaning that further improvement is needed to enhance the temperature uniformity between the center and edge areas of the tray.

[0057] In this embodiment, the lower surface of the tray 111 is further provided with a downwardly extending boss 1113 at its center, and the induction heating assembly 112 is arranged coaxially around the boss 1113. Figure 4As shown, the second induction coil 1122 surrounds the protrusion 1113, so the magnetic lines of force generated by the second induction coil 1122 can pass through the protrusion 1113, thereby easily inductively heating the protrusion 1113, raising its temperature, and then conducting the heat of the protrusion 1113 upwards, causing the temperature of the central area of ​​the upper part of the tray 111 to rise. Figure 2 As shown, the temperature of the central region of the tray 111 provided by the present invention does not fluctuate significantly. Furthermore, by providing the protrusion 1113, the power of the second induction coil does not need to be set too high, which can also increase the temperature of the central region of the tray 111, compensating for the problem of insufficient temperature in the central region of the tray 111. In this embodiment, the number of the at least one second induction coil 1122 can be one.

[0058] Furthermore, the lower surface of the protrusion 1113 is lower than the lower surface of the at least one second induction coil 1122, thereby generating a stronger eddy current effect on the protrusion 1113, causing the protrusion 1113 to generate more heat, thus increasing the temperature of the central region of the tray 111. Optionally, in the vertical direction, the distance between the lower surface of the protrusion 1113 and the lower surface of the at least one second induction coil 1122 is 2mm-10mm to achieve the best heating effect.

[0059] In this embodiment, the base 110 further includes a rotating barrel 113, the tray 111 is placed on the rotating barrel, and the rotating barrel 113 supports the edge of the tray 111. Figure 4 As shown, the rotating barrel 113 is connected to the rotating shaft 115 via the rotating support disk 114. During the process, the rotating shaft 115 drives the rotating barrel 113 to rotate continuously in order to achieve uniform growth of thin films on the wafer W.

[0060] like Figure 3 As shown, in addition to the problem of low temperature at the tray edge, the existing technology's base also suffers from excessively high temperature in the rotating cylinder near the tray edge, which leads to the formation of a large amount of deposits on the sidewall of the rotating cylinder. Furthermore, excessive temperature difference within the rotating cylinder itself can trigger excessive thermal stress, causing the rotating cylinder to crack.

[0061] To reduce the induction heating of the rotating barrel 113 by the induction heating component 112 and avoid the rotating barrel 113 from getting too hot, the horizontal distance between the outermost part of the first induction coil 1121 and the rotating barrel 113 can be set to 10mm-30mm.

[0062] To prevent corrosion of the induction coil by process gases and corrosive cleaning gases (such as Cl2) introduced into the reaction chamber 100, a gas-isolating component 116 is provided between the rotating drum 113 and the induction heating assembly 112. The gas-isolating component 116 isolates the gas flow between the induction heating assembly 112 and the reaction chamber 100. Figure 4 As shown, the air-blocking component 116 is arranged around the induction heating component 112. The air-blocking component includes a lower support plate 1161, an air-blocking cylinder 1162, and an air-blocking plate 1163. The lower support plate 1161 is located below the induction heating component 112, the air-blocking plate 1163 is located above the induction heating component 112, the air-blocking cylinder 1162 is located on the side of the induction heating component 112, and the induction heating component 112 is located within the space defined by the lower support plate 1161, the air-blocking cylinder 1162, and the air-blocking plate 1163. Furthermore, in order to accommodate the protrusion 1113 on the tray 111, the air-blocking plate 1163 has a through hole in its center to allow the protrusion 1113 to pass through. The air-blocking cylinder 1162 includes an inner air-blocking cylinder 1162a and an outer air-blocking cylinder 1162b. The inner air-blocking cylinder 1162a fits the inner circumference of the air-blocking plate 1163, and the outer air-blocking cylinder 1162b fits the outer circumference of the air-blocking plate 1163. With the addition of the lower support plate 1161, an air-blocking assembly 116 with an annular space is formed. The coil of the induction heating assembly 112 is arranged in the annular space.

[0063] In one embodiment, a heat insulation cylinder may be provided between the rotating barrel 113 and the induction heating assembly 112. Figure 4 (Not shown in the image) A heat insulation cylinder (comprising a conductive material) is used to suppress induction heating of the rotating barrel 113 by the coil, thereby reducing the temperature of the rotating barrel 113. The heat insulation cylinder may be made of graphite. The gas-proof cylinder 1162 may be made of ceramic or quartz.

[0064] In other embodiments, the air-insulating cylinder 1162 may be directly made of a conductive material, which can suppress the induction heating of the rotating barrel 113 by the coil and reduce the temperature of the rotating barrel 113. For example, the air-insulating cylinder 1162 may be made of graphite. In this case, it is not necessary to set a heat insulation cylinder between the rotating barrel 113 and the induction heating assembly 112, thereby simplifying the structure of the base 110.

[0065] In this embodiment, the surfaces of the first induction coil 1121 and the at least one second induction coil 1122 have a metal plating with an emissivity of no more than 0.3 to reduce the heat absorbed by the coils near the tray 111 from the radiant radiation of the tray 111. The metal plating can also improve the corrosion resistance of the coils and extend their service life. The metal plating can be at least one of gold, nickel-tin alloy, and high-phosphorus nickel.

[0066] Furthermore, the monolithic chemical vapor deposition apparatus provided in this embodiment also includes a temperature control feedback system. This system adjusts the current in the induction heating component 112 based on measurements from a first temperature sensor and a second temperature sensor, respectively, to measure the temperature at the center and edge of the wafer W. Thus, the temperature of the central and edge regions of the tray 111 is monitored using the first and second temperature sensors, and the power distribution of different coils is individually adjusted by the temperature control feedback system to achieve multi-zone temperature control of the tray 111, resulting in better temperature distribution uniformity between the central and edge regions of the tray 111.

[0067] It should be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0068] Although the present invention has been described in detail through the preferred embodiments above, it should be understood that the above description should not be considered as a limitation of the present invention. Various modifications and substitutions to the present invention will be apparent to those skilled in the art after reading the above description. Therefore, the scope of protection of the present invention should be defined by the appended claims.

Claims

1. A susceptor for use in a single wafer chemical vapor deposition apparatus, characterized by, The base comprises: a tray, the upper surface of which is used to carry a wafer; an induction heating assembly, which heats the tray by electromagnetic induction heating; the induction heating assembly is composed of a first induction coil located at the outer ring and at least one second induction coil located at the inner ring, the currents in the first induction coil and the at least one second induction coil are the same frequency and in phase; the projection of the wafer edge is located on the innermost turn of the first induction coil.

2. The susceptor of claim 1, wherein, The average current in the first induction coil is greater than the average current in the at least one second induction coil.

3. The susceptor of claim 1, wherein, In the horizontal direction, the distance between the outermost side of the first induction coil and the wafer edge is greater than 20mm.

4. The susceptor of claim 1, wherein, The distance between the outermost turn of the at least one second induction coil and the innermost turn of the first induction coil is not less than 10mm.

5. The susceptor of claim 1, wherein, The first induction coil and the at least one second induction coil are connected to a multi-zone output intermediate frequency power supply of the same frequency and phase.

6. The susceptor of claim 1, wherein, The upper and lower surfaces of the first induction coil and the at least one second induction coil are located in the same plane, and in the vertical direction, the distance between the upper surface of the first induction coil and the at least one second induction coil and the lower surface of the tray is 5mm-15mm.

7. The susceptor of claim 1, wherein The lower surface of the tray is provided with a downwardly extending boss, and the induction heating assembly is coaxially arranged around the boss.

8. The susceptor of claim 7, wherein, The lower surface of the boss is lower than the lower surface of the at least one second induction coil.

9. The susceptor of claim 8, wherein, In the vertical direction, the distance between the lower surface of the boss and the lower surface of the at least one second induction coil is 2mm-10mm.

10. The susceptor of claim 1, wherein, The tray comprises a body and a transmission ring, the transmission ring is arranged above the body, and the transmission ring is used to carry a wafer.

11. The susceptor of claim 1, wherein The base further comprises a rotating barrel, and the tray is arranged on the rotating barrel.

12. The susceptor of claim 11, wherein, The horizontal distance between the outermost side of the first induction coil and the rotating barrel is 10mm-30mm.

13. The susceptor of claim 12, wherein, An air isolation assembly is arranged between the rotating barrel and the induction heating assembly, and the air isolation assembly isolates the gas flow between the induction heating assembly and the reaction chamber of the single-wafer chemical vapor deposition device.

14. The susceptor of claim 13, wherein, The air isolation assembly comprises a lower supporting plate, an air isolation cylinder and an air isolation disc, the lower supporting plate is located below the induction heating assembly, the air isolation disc is located above the induction heating assembly, the air isolation cylinder is located at the side of the induction heating assembly, and the induction heating assembly is located in the space defined by the lower supporting plate, the air isolation cylinder and the air isolation disc.

15. The susceptor of claim 14, wherein, The air isolation cylinder comprises a conductive material.

16. The susceptor of claim 12, wherein A heat insulation cylinder is arranged between the rotating barrel and the induction heating assembly, and the heat insulation cylinder comprises a conductive material.

17. The susceptor of claim 1, wherein The surface of the first induction coil and the at least one second induction coil has a metal plating layer with an emissivity not greater than 0.

3.

18. The susceptor of claim 17, wherein, The metal plating layer is at least one of gold, nickel-tin alloy and high-phosphorus nickel.

19. A single wafer chemical vapor deposition apparatus characterized by comprising: The base comprises: a reaction chamber, the reaction chamber is provided with a base as claimed in any one of claims 1-18, and a gas supply device is arranged opposite to the base.

20. The single wafer chemical vapor deposition apparatus of claim 19, wherein the substrate is a semiconductor wafer. The single wafer chemical vapor deposition apparatus includes a temperature control feedback system that adjusts the current in the induction heating assembly based on measurements from a first temperature sensor and a second temperature sensor, the first temperature sensor and the second temperature sensor being configured to measure the temperature at the center and the edge of the wafer, respectively.

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