Laser operation method and device adaptive to low-temperature scene

Abstract

The invention provides a laser operation method and device adaptive to a low-temperature scene, and the method comprises the steps: stripping residual pumping power under a low-temperature condition through a high-stripping-ratio CPS, and enabling the residual pumping power to be higher than the residual pumping power under a low-temperature condition through the high-stripping-ratio CPS by changing the thickness of a corrosive agent, the corrosion time and the corrosion length. And the packaging length is increased. And calculating the influence of the current application on heat accumulation, determining a threshold current based on a calculation result, and applying the threshold current to the pump source to preheat the pump source. A large amount of cladding light which is not absorbed at a low temperature is stripped through the CPS with a high stripping ratio, a threshold current is provided for the pumping source at the low temperature, the pumping source is pre-heated in advance, and damage to the pumping source caused by thermal shock is prevented.

Description

Technical Field

[0001] This application relates to the field of laser technology, and particularly to a laser and device adapted to low-temperature environments. This application also relates to a computing device and a computer-readable storage medium. Background Technology

[0002] Current solutions for enabling lasers to operate at low temperatures include adding a heating module to the heat dissipation system to heat the pump source at -20°C, thus maintaining its operating temperature at room temperature. Other solutions include using an open liquid nitrogen spray cooling system, which controls the opening of the flow regulating valve and the state of the solenoid valve within the cooling unit to regulate the spray flow and spray on / off state. This ensures that the current temperature of the cold plate, collected by the cold plate temperature sensor, matches the preset target temperature within the controller, ultimately achieving low-temperature operation.

[0003] However, conventional cladding optical strippers (CPS) have insufficient stripping efficiency at low temperatures (typically <19dB). Residual pump light accumulates in the fiber cladding, causing local thermal effects and leading to system instability. Furthermore, when a high-power pump source is directly started at low temperatures, the semiconductor chip is prone to junction cracking due to rapid changes in thermal stress, resulting in chip failure. The failure rate increases by at least 50%, manifested as complete chip failure when a large current is applied. Summary of the Invention

[0004] In view of this, embodiments of this application provide a laser operation method adapted to low-temperature environments to address the technical deficiencies in the prior art. Embodiments of this application also provide a laser operation device adapted to low-temperature environments, a computing device, and a computer-readable storage medium.

[0005] According to a first aspect of the embodiments of this application, a laser operation method adapted to low-temperature scenarios is provided, comprising: Residual pump power at low temperatures is stripped using a high stripping ratio CPS, wherein the high stripping ratio CPS is manufactured by changing the etchant thickness, etching time, etching length, and increasing the encapsulation length. The effect of applied current on heat accumulation is calculated, a threshold current is determined based on the calculation results, and the threshold current is applied to the pump source to preheat the pump source.

[0006] Optionally, the process for determining the preparation parameters of the high stripping ratio CPS includes: Based on the offset coefficient, the effect of temperature change on the center wavelength change of the laser diode is calculated; Based on the change in the center wavelength, the power of the cladding light is determined, and the stripping ratio is determined accordingly. Based on the stripping ratio and the preset stripping ratio, different stripping power formulas were adjusted to correspond to different etching thicknesses, times, and lengths, as follows. Finally, the etchant thickness, etching time, etching length, and encapsulation length were determined. T 腐蚀时间 =R 包层半径 ÷η 腐蚀速率 ; β=P 剥除比 ÷ (T) 腐蚀时间× L 腐蚀长度 ); L 腐蚀长度 =P 剥除比 ÷β÷T 腐蚀时间 ; Where β represents the ratio of the stripping ratio to the unit time and the unit corrosion length, and η 腐蚀速率 T characterizes the corrosion rate determined by the concentration of hydrofluoric acid. 腐蚀时间 Characterizing corrosion time, R 包层半径 Characterizing the cladding radius, P 剥除比 L represents the stripping ratio corresponding to different power levels. 腐蚀长度 Characterizes the corrosion length.

[0007] Optionally, the effect of temperature change on the center wavelength change of the laser diode is calculated based on the offset coefficient, as shown in the following formula: , in, Characterizing the temperature change, Characterizing the change in the center wavelength, The offset coefficient is characterized.

[0008] Optionally, the calculation of the effect of the applied current on heat accumulation includes: The input voltage applied to the pump source and the input current flowing into the pump source are collected; Determine the output power of the pump source; The cumulative heat is obtained by calculating the product of the input voltage and the input current, and subtracting the output power.

[0009] Optionally, the cumulative heat is obtained by calculating the product of the input voltage and the input current, and subtracting the output power, as shown in the following formula: ; in, Characterizing the accumulated heat, Characterizing the input voltage, Characterizing the input current, The output power is characterized.

[0010] Optionally, determining the threshold current based on the calculation results includes: Based on the combined calculation results of the accumulated heat and the threshold heat, the calculation formula for the accumulated heat is updated. The threshold heat value is determined based on the safe range of heat accumulation. The threshold current is determined based on the threshold heat.

[0011] Optionally, the calculation formula for the accumulated heat is updated by combining the calculation results of the accumulated heat with the threshold heat, as follows: , in, The threshold heat is characterized.

[0012] Optionally, the threshold current is determined based on the threshold heat using the following formula: , in, Characterizing the threshold current, Characterizes the duration of the threshold current.

[0013] According to a second aspect of the embodiments of this application, a laser operating device adapted to low-temperature environments is provided, comprising: The stripping module is configured to strip residual pump power at low temperatures using a high stripping ratio CPS, wherein the high stripping ratio CPS is manufactured by changing the etchant thickness, etching time, etching length, and increasing the package length. The preheating module is configured to calculate the effect of current application on heat accumulation, determine a threshold current based on the calculation results, and apply the threshold current to the pump source to preheat the pump source.

[0014] According to a third aspect of the embodiments of this application, a computing device is provided, comprising: Memory and processor; The memory is used to store computer-executable instructions, and the processor executes the computer-executable instructions to implement the steps of the laser operation method adapted to low-temperature scenarios.

[0015] According to a fourth aspect of the present application, a computer-readable storage medium is provided that stores computer-executable instructions, which, when executed by a processor, implement the steps of the laser operation method adapted to low-temperature scenarios.

[0016] According to a fifth aspect of the present application, a chip is provided that stores a computer program, which, when executed by the chip, implements the steps of the laser operation method adapted to low-temperature scenarios.

[0017] This application provides a laser operation method adapted to low-temperature environments, comprising using a high stripping ratio CPS to strip residual pump power under low-temperature conditions. The high stripping ratio CPS is fabricated by modifying the etchant thickness, etching time, etching length, and increasing the encapsulation length. The method calculates the impact of applied current on heat accumulation, determines a threshold current based on the calculation results, and applies the threshold current to the pump source to preheat the pump source. By using the high stripping ratio CPS to strip away a large amount of unabsorbed cladding light at low temperatures and providing a threshold current to the pump source at low temperatures, the method preheats the pump and prevents damage to the pump source due to thermal shock. Attached Figure Description

[0018] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0019] Figure 1 This is a flowchart illustrating a laser operation method adapted to low-temperature scenarios, provided in one embodiment of this application. Figure 2 This is a YDF absorption and emission spectrum provided in one embodiment of this application; Figure 3 This is a diagram illustrating the scattering effect of cladding light according to an embodiment of this application; Figure 4 This is a schematic diagram of the structure of a laser operating device adapted to low-temperature scenarios, provided in one embodiment of this application; Figure 5 This is a structural block diagram of a computing device provided in one embodiment of this application. Detailed Implementation

[0020] Many specific details are set forth in the following description to provide a full understanding of this application. However, this application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar extensions without departing from the spirit of this application; therefore, this application is not limited to the specific embodiments disclosed below.

[0021] The terminology used in one or more embodiments of this application is for the purpose of describing particular embodiments only and is not intended to limit the scope of one or more embodiments of this application. The singular forms “a,” “the,” and “the” used in one or more embodiments of this application and in the appended claims are also intended to include the plural forms unless the context clearly indicates otherwise. It should also be understood that the term “and / or” used in one or more embodiments of this application refers to and includes any or all possible combinations of one or more associated listed items.

[0022] It should be understood that although the terms first, second, etc., may be used to describe various information in one or more embodiments of this application, such information should not be limited to these terms. These terms are only used to distinguish information of the same type from one another. For example, first may also be referred to as second without departing from the scope of one or more embodiments of this application, and similarly, second may also be referred to as first.

[0023] First, the terminology used in one or more embodiments of the present invention will be explained.

[0024] CPS: Cladding Power Stripper; YDF: Yb-Doped Double-Clad Fiber; LD: Laser Diode, i.e., semiconductor pump source.

[0025] This application provides a laser operation method adapted to low-temperature environments. This application also relates to a laser operation device adapted to low-temperature environments, a computing device, and a computer-readable storage medium, which will be described in detail in the following embodiments.

[0026] Figure 1 The flowchart illustrates a laser operation method adapted to low-temperature scenarios according to an embodiment of this application, specifically including the following steps: Step S102: Remove residual pump power at low temperature using a high stripping ratio CPS, wherein the high stripping ratio CPS is made by changing the etchant thickness, etching time, etching length, and increasing the encapsulation length. Step S104: Calculate the effect of current application on heat accumulation, determine the threshold current based on the calculation results, and apply the threshold current to the pump source to preheat the pump source.

[0027] Among them, such as Figure 2As shown in the provided YDF absorption and emission spectrum, at a low temperature of -40℃, the center wavelength of the pump source (LD) undergoes a blue shift, causing a mismatch between its emission spectrum and the absorption peak of the ytterbium-doped fiber (YDF). According to Yb... 3+ As can be seen from the absorption and emission spectra, when using a 915nm pump source, the pump wavelength blue-shifts to around 893nm at low temperatures. The absorption efficiency of YDF in the 893nm band will decrease by more than 10%, resulting in a large amount of unabsorbed pump light residue. Specifically, the conventional CPS stripping ratio is about 19dB (98.74%), which can meet the requirements for normal temperature operation, but cannot support a large amount of cladding light stripping for ultra-low temperature operation. This results in a large amount of cladding light remaining at the splice between the end cap and the fiber, causing heat generation and leading to system failure.

[0028] Therefore, a high stripping ratio CPS was developed by modifying the etchant thickness, etching time, etching length, and increasing the package length. This addresses the problem of increased unabsorbed pump light caused by the decreased absorption efficiency of ytterbium-doped fiber (YDF) due to the center wavelength drift of the laser diode (LD) at low temperatures. The high stripping ratio CPS has a stripping ratio >23dB and a stripping area greater than or equal to 15cm to effectively remove residual pump power at low temperatures. Simultaneously, to avoid damage to the semiconductor pump source from current and thermal shock caused by directly starting high power at low temperatures, a software-controlled preheating strategy is adopted. At startup, a threshold current is first output to preheat the pump source chip. The threshold current is determined by the effect of current application on heat accumulation. Once the pump source stabilizes, the power is gradually increased to full power. Based on actual measurements, the entire process takes no more than 500ms. Through these methods—high stripping ratio CPS and intelligent preheating of the pump source—reliable and stable operation of the laser at -40℃ has been successfully achieved.

[0029] Furthermore, in step S102 above, the process for determining the preparation parameters of the high stripping ratio CPS is specifically implemented as follows in this embodiment: Based on the offset coefficient, the effect of temperature change on the center wavelength change of the laser diode is calculated; according to the center wavelength change, the power of the cladding light is determined, thereby determining the stripping ratio; based on the stripping ratio and a preset stripping ratio, different etching thicknesses, times, and lengths are adjusted to correspond to different stripping power formulas as follows, ultimately determining the etchant thickness, etching time, etching length, and encapsulation length. T 腐蚀时间 =R 包层半径 ÷η 腐蚀速率 ; β=P 剥除比 ÷ (T) 腐蚀时间× L 腐蚀长度 ); L 腐蚀长度=P 剥除比 ÷β÷T 腐蚀时间 ; Where β represents the ratio of the stripping ratio to the unit time and the unit corrosion length, and η 腐蚀速率 T characterizes the corrosion rate determined by the concentration of hydrofluoric acid. 腐蚀时间 Characterizing corrosion time, R 包层半径 Characterizing the cladding radius, P 剥除比 L represents the stripping ratio corresponding to different power levels. 腐蚀长度 Characterizes the corrosion length.

[0030] Furthermore, in the above steps, based on the offset coefficient, the effect of temperature change on the center wavelength change of the laser diode is calculated, as shown in the following formula: , in, Characterizing the temperature change, Characterizing the change in the center wavelength, The offset coefficient is characterized.

[0031] Based on this, P represents the stripping ratio corresponding to different powers. 剥除比 For example, 100W corresponds to 15dB, and 500W corresponds to 23dB. The offset coefficient ranges from [0.3, 0.5]. In practical applications, a value of 0.33nm / ℃ is preferred. The temperature change ranges from room temperature (25℃) to -40℃, which is a decrease of 65℃. The calculated change in center wavelength shows a blue shift of 21.45nm, resulting in a wavelength drop to 893.55nm. The absorption decreases by about 10%, corresponding to a power of 200W.

[0032] CPS (Chemical Permeable Petrochemical) preparation is often achieved through chemical etching. The principle involves a chemical reaction between hydrofluoric acid and quartz (SiO2), with the reaction equation being SiO2 + 4 HF = SiF4↑ + 2 H2O. During the reaction, hydrofluoric acid continuously dissolves the quartz coating, gradually roughening the surface of the coating. Figure 3 The provided diagram shows the scattering effect of cladding light. Figure (a) shows that the cladding surface gradually becomes rougher, forming a microscopic uneven structure. The size and distribution of these uneven structures affect the scattering effect of cladding light, which in turn affects the stripping efficiency of cladding light.

[0033] Therefore, based on the above calculation results, the etchant thickness, etching time, etching length, and encapsulation length were adjusted. In actual use cases, it is preferable to increase the etching length to 12cm and the encapsulation length to 15cm. The resulting high stripping ratio CPS achieved a stripping ratio of 25dB (99.68%), an increase of 0.94%, and reduced the power input to the end cap fusion point by about 73%, ensuring the stability of the output optical path at low temperatures.

[0034] Furthermore, in step S104 above, the process of calculating the effect of applied current on heat accumulation is specifically implemented as follows in this embodiment: The input voltage applied to the pump source and the input current flowing into the pump source are collected; the output power of the pump source is determined; the product of the input voltage and the input current is calculated and the output power is subtracted to obtain the accumulated heat.

[0035] Furthermore, in the above steps, the product of the input voltage and the input current is calculated, and the output power is subtracted to obtain the accumulated heat, as shown in the following formula: ; in, Characterizing the accumulated heat, Characterizing the input voltage, Characterizing the input current, The output power is characterized.

[0036] Furthermore, in step S104, the process of determining the threshold current based on the calculation results is specifically implemented as follows in the implemented embodiment: Based on the combined calculation results of the accumulated heat and the threshold heat, the calculation formula for the accumulated heat is updated; the threshold heat is determined according to the safe range of the accumulated heat; and the threshold current is determined according to the threshold heat.

[0037] Furthermore, in the above steps, the calculation formula for the accumulated heat is updated by combining the calculation results of the accumulated heat with the threshold heat, as follows: , in, The threshold heat is characterized.

[0038] Furthermore, in the above steps, the threshold current is determined based on the threshold heat, as follows: , in, Characterizing the threshold current, Characterizes the duration of the threshold current.

[0039] Specifically, since the pump source fails at low temperatures because directly applying a large current at ultra-low temperatures can cause temperature shock and lead to chip failure, the heat accumulation under high current is calculated. After increasing the threshold current, the pump source completes heat accumulation. Specifically, if the input voltage is 50V, the input current is 22A, and the output power is 700W, then the heat accumulation in 500ms is... ; Therefore, within the 500ms period, 250ms is designated as a preheating process to increase the threshold current. During this time, the updated accumulated heat is... .

[0040] If the thermal shock needs to be reduced by at least 37.5%, then the accumulated heat after increasing the threshold current will be 62.5% of that before increasing the threshold current, which is 125J. Therefore, the threshold current should be 2A. That is, by using a threshold current of 2A and preheating for 250ms, the thermal shock can be greatly mitigated, ensuring the reliable operation of the LD at ultra-low temperatures.

[0041] It should be noted that, in addition to adjusting the value of the threshold current, the duration of the threshold current can also be adjusted, that is, the proportion of the preheating time can be adjusted.

[0042] Corresponding to the above method embodiments, this application also provides embodiments of laser operating devices adapted to low-temperature scenarios. Figure 4 A schematic diagram of a laser operating device adapted to low-temperature environments, according to an embodiment of this application, is shown. Figure 4 As shown, the device includes: The stripping module 402 is configured to strip residual pump power at low temperatures using a high stripping ratio CPS, wherein the high stripping ratio CPS is manufactured by changing the etchant thickness, etching time, etching length, and increasing the encapsulation length. The preheating module 404 is configured to calculate the effect of current application on heat accumulation, determine a threshold current based on the calculation results, and apply the threshold current to the pump source to preheat the pump source.

[0043] In an optional embodiment, the stripping module 402 is further configured to: Based on the offset coefficient, the effect of temperature change on the center wavelength change of the laser diode is calculated; according to the center wavelength change, the power of the cladding light is determined, thereby determining the stripping ratio; based on the stripping ratio and a preset stripping ratio, different etching thicknesses, times, and lengths are adjusted to correspond to different stripping power formulas as follows, ultimately determining the etchant thickness, etching time, etching length, and encapsulation length. T 腐蚀时间 =R 包层半径 ÷η 腐蚀速率 ; β=P 剥除比 ÷ (T) 腐蚀时间× L 腐蚀长度 ); L 腐蚀长度 =P 剥除比 ÷β÷T 腐蚀时间 ; Where β represents the ratio of the stripping ratio to the unit time and the unit corrosion length, and η 腐蚀速率 T characterizes the corrosion rate determined by the concentration of hydrofluoric acid. 腐蚀时间 Characterizing corrosion time, R 包层半径 Characterizing the cladding radius, P 剥除比 L represents the stripping ratio corresponding to different power levels. 腐蚀长度 Characterizes the corrosion length.

[0044] In an optional embodiment, the stripping module 402 is further configured to: Based on the offset coefficient, the effect of temperature change on the center wavelength change of the laser diode is calculated using the following formula: ,in, Characterizing the temperature change, Characterizing the change in the center wavelength, The offset coefficient is characterized.

[0045] In an optional embodiment, the preheating module 404 is further configured to: The input voltage applied to the pump source and the input current flowing into the pump source are collected; the output power of the pump source is determined; the product of the input voltage and the input current is calculated and the output power is subtracted to obtain the accumulated heat.

[0046] In an optional embodiment, the preheating module 404 is further configured to: The cumulative heat is obtained by calculating the product of the input voltage and the input current, and subtracting the output power, as shown in the following formula: ;in, Characterizing the accumulated heat, Characterizing the input voltage, Characterizing the input current, The output power is characterized.

[0047] In an optional embodiment, the preheating module 404 is further configured to: Based on the combined calculation results of the accumulated heat and the threshold heat, the calculation formula for the accumulated heat is updated; the threshold heat is determined according to the safe range of the accumulated heat; and the threshold current is determined according to the threshold heat.

[0048] In an optional embodiment, the preheating module 404 is further configured to: Based on the combined calculation results of the accumulated heat and the threshold heat, the calculation formula for the accumulated heat is updated as follows: ,in, The threshold heat is characterized.

[0049] In an optional embodiment, the preheating module 404 is further configured to: The threshold current is determined based on the threshold heat, as follows: ,in, Characterizing the threshold current, Characterizes the duration of the threshold current.

[0050] This application provides a laser operating device adapted to low-temperature environments, comprising a high stripping ratio CPS (Cyclic Photoelectric System) to strip residual pump power under low-temperature conditions. The high stripping ratio CPS is fabricated by modifying the etchant thickness, etching time, etching length, and increasing the encapsulation length. The device calculates the effect of applied current on heat accumulation, determines a threshold current based on the calculation results, and applies this threshold current to the pump source to preheat it. The high stripping ratio CPS removes a large amount of unabsorbed cladding light at low temperatures and provides a threshold current to the pump source at low temperatures, preheating the pump and preventing damage to the pump source due to thermal shock.

[0051] The above is a schematic scheme of a laser operating device adapted to low-temperature scenarios according to this embodiment. It should be noted that the technical solution of this laser operating device adapted to low-temperature scenarios and the technical solution of the laser operating method adapted to low-temperature scenarios described above belong to the same concept. Details not described in detail in the technical solution of the laser operating device adapted to low-temperature scenarios can be found in the description of the technical solution of the laser operating method adapted to low-temperature scenarios described above. Furthermore, the components in the device embodiment should be understood as functional modules necessary to implement each step of the program flow or each step of the method; these functional modules are not actual functional divisions or separations. The device claims defined by such a set of functional modules should be understood as a functional module architecture that primarily implements the solution through the computer program described in the specification, and not as a physical device that primarily implements the solution through hardware.

[0052] Figure 5 A structural block diagram of a computing device 500 according to an embodiment of this application is shown. The components of the computing device 500 include, but are not limited to, a memory 510 and a processor 520. The processor 520 is connected to the memory 510 via a bus 530, and a database 550 is used to store data.

[0053] The computing device 500 also includes an access device 540, which enables the computing device 500 to communicate via one or more networks 560. Examples of these networks include a Public Switched Telephone Network (PSTN), a Local Area Network (LAN), a Wide Area Network (WAN), a Personal Area Network (PAN), or a combination of communication networks such as the Internet. The access device 540 may include one or more of any type of wired or wireless network interface (e.g., a Network Interface Card (NIC)), such as an IEEE 802.11 Wireless Local Area Network (WLAN) interface, a Wi-MAX interface, an Ethernet interface, a Universal Serial Bus (USB) interface, a cellular network interface, a Bluetooth interface, a Near Field Communication (NFC) interface, and so on.

[0054] In one embodiment of this application, the aforementioned components of the computing device 500 and Figure 5 Other components, not shown, can also be connected to each other, for example, via a bus. It should be understood that... Figure 5 The block diagram of the computing device shown is for illustrative purposes only and is not intended to limit the scope of this application. Those skilled in the art can add or replace other components as needed.

[0055] The computing device 500 can be any type of stationary or mobile computing device, including mobile computers or mobile computing devices (e.g., tablet computers, personal digital assistants, laptop computers, notebook computers, netbooks, etc.), mobile phones (e.g., smartphones), wearable computing devices (e.g., smartwatches, smart glasses, etc.) or other types of mobile devices, or stationary computing devices such as desktop computers or PCs. The computing device 500 can also be a mobile or stationary server.

[0056] The processor 520 is used to execute computer-executable instructions for determining the threshold current in the laser operation method adapted to low-temperature scenarios.

[0057] The above is a schematic representation of a computing device according to this embodiment. It should be noted that the technical solution of this computing device and the technical solution of the laser operation method adapted to low-temperature scenarios described above belong to the same concept. Details not described in detail in the technical solution of the computing device can be found in the description of the technical solution of the laser operation method adapted to low-temperature scenarios described above.

[0058] An embodiment of this application also provides a computer-readable storage medium storing computer instructions that, when executed by a processor, are used to determine the threshold current in the laser operation method adapted to low-temperature scenarios.

[0059] The above is an illustrative scheme of a computer-readable storage medium according to this embodiment. It should be noted that the technical solution of this storage medium belongs to the same concept as the technical solution of the laser operation method adapted to low-temperature scenarios described above. For details not described in detail in the technical solution of the storage medium, please refer to the description of the technical solution of the laser operation method adapted to low-temperature scenarios described above.

[0060] An embodiment of this application also provides a chip that stores a computer program, which, when executed by the chip, implements the step of determining the threshold current in the laser operation method adapted to low-temperature scenarios.

[0061] The foregoing has described specific embodiments of this application. Other embodiments are within the scope of the appended claims. In some cases, the actions or steps recited in the claims may be performed in a different order than that shown in the embodiments and may still achieve the desired results. Furthermore, the processes depicted in the drawings do not necessarily require the specific or sequential order shown to achieve the desired results. In some embodiments, multitasking and parallel processing are also possible or may be advantageous.

[0062] The computer instructions include computer program code, which may be in the form of source code, object code, executable file, or certain intermediate forms. The computer-readable medium may include any entity or device capable of carrying the computer program code, recording media, USB flash drives, portable hard drives, magnetic disks, optical disks, computer memory, read-only memory (ROM), random access memory (RAM), electrical carrier signals, telecommunication signals, and software distribution media, etc. It should be noted that the content included in the computer-readable medium may be appropriately added to or subtracted according to the requirements of legislation and patent practice in the jurisdiction. For example, in some jurisdictions, according to legislation and patent practice, computer-readable media may not include electrical carrier signals and telecommunication signals.

[0063] It should be noted that, for the sake of simplicity, the foregoing method embodiments are all described as a series of actions. However, those skilled in the art should understand that this application is not limited to the described order of actions, as some steps may be performed in other orders or simultaneously according to this application. Furthermore, those skilled in the art should also understand that the embodiments described in the specification are preferred embodiments, and the actions and modules involved are not necessarily essential to this application.

[0064] In the above embodiments, the descriptions of each embodiment have different focuses. For parts not described in detail in a certain embodiment, please refer to the relevant descriptions of other embodiments.

[0065] The preferred embodiments disclosed above are merely illustrative of this application. The optional embodiments do not exhaustively describe all details, nor do they limit the invention to the specific implementations described. Clearly, many modifications and variations can be made based on the content of this application. These embodiments are selected and specifically described in this application to better explain the principles and practical applications of this application, thereby enabling those skilled in the art to better understand and utilize this application. This application is limited only by the claims and their full scope and equivalents.

Claims

1. A laser operation method adapted to low-temperature environments, characterized in that, include: Residual pump power at low temperatures is stripped using a high stripping ratio CPS, wherein the high stripping ratio CPS is manufactured by changing the etchant thickness, etching time, etching length, and increasing the package length. The effect of applied current on heat accumulation is calculated, a threshold current is determined based on the calculation results, and the threshold current is applied to the pump source to preheat the pump source.

2. The laser operation method adapted to low-temperature scenarios according to claim 1, characterized in that, The process for determining the preparation parameters of the high stripping ratio CPS includes: Based on the offset coefficient, the effect of temperature change on the center wavelength change of the laser diode is calculated; Based on the change in the center wavelength, the power of the cladding light is determined, and the stripping ratio is determined accordingly. Based on the stripping ratio and the preset stripping ratio, different stripping power formulas were adjusted to correspond to different etching thicknesses, times, and lengths, as follows. Finally, the etchant thickness, etching time, etching length, and encapsulation length were determined. T 腐蚀时间 =R 包层半径 ÷η 腐蚀速率 ; β=P 剥除比 ÷(T 腐蚀时间× L 腐蚀长度 ); L 腐蚀长度 =P 剥除比 ÷β÷T 腐蚀时间 ; Where β represents the ratio of the stripping ratio to the unit time and the unit corrosion length, and η 腐蚀速率 T characterizes the corrosion rate determined by the concentration of hydrofluoric acid. 腐蚀时间 Characterizing corrosion time, R 包层半径 Characterizing the cladding radius, P 剥除比 L represents the stripping ratio corresponding to different power levels. 腐蚀长度 Characterizes the corrosion length.

3. The laser operation method adapted to low-temperature scenarios according to claim 2, characterized in that, The effect of temperature change on the center wavelength change of the laser diode is calculated based on the offset coefficient, as shown in the following formula: ， in, Characterizing the temperature change, Characterizing the change in the center wavelength, The offset coefficient is characterized.

4. The laser operation method adapted to low-temperature scenarios according to claim 1, characterized in that, The calculated effect of the applied current on heat accumulation includes: The input voltage applied to the pump source and the input current flowing into the pump source are collected; Determine the output power of the pump source; The cumulative heat is obtained by calculating the product of the input voltage and the input current, and subtracting the output power.

5. The laser operation method adapted to low-temperature scenarios according to claim 4, characterized in that, The cumulative heat is obtained by calculating the product of the input voltage and the input current, and subtracting the output power, as shown in the following formula: ; in, Characterizing the accumulated heat, Characterizing the input voltage, Characterizing the input current, The output power is characterized.

6. The laser operation method adapted to low-temperature scenarios according to claim 5, characterized in that, The determination of the threshold current based on the calculation results includes: Based on the combined calculation results of the accumulated heat and the threshold heat, the calculation formula for the accumulated heat is updated. The threshold heat value is determined based on the safe range of heat accumulation. The threshold current is determined based on the threshold heat.

7. The laser operation method adapted to low-temperature scenarios according to claim 6, characterized in that, The calculation results of the accumulated heat are combined with the threshold heat, and the calculation formula for the accumulated heat is updated as follows: ， in, The threshold heat is characterized.

8. The laser operation method adapted to low-temperature scenarios according to claim 7, characterized in that, The threshold current is determined based on the threshold heat, as follows: ， in, Characterizing the threshold current, Characterizes the duration of the threshold current.

9. A laser operating device adapted to low-temperature environments, characterized in that, include: The stripping module is configured to strip residual pump power at low temperatures using a high stripping ratio CPS, wherein the high stripping ratio CPS is manufactured by changing the etchant thickness, etching time, etching length, and increasing the package length. The preheating module is configured to calculate the effect of current application on heat accumulation, determine a threshold current based on the calculation results, and apply the threshold current to the pump source to preheat the pump source.

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