Production method of novel oxide heterojunction, novel transistor and transparent device

Abstract

The invention relates to the field of semiconductor manufacturing, in particular to a novel oxide heterojunction production method, a novel transistor and a transparent device. Growing an indium gallium oxide epitaxial layer on the substrate; and growing an aluminum gallium oxide epitaxial layer on the indium gallium oxide epitaxial layer, so that two-dimensional electron gas is formed at the interface of the indium gallium oxide epitaxial layer and the aluminum gallium oxide epitaxial layer, and an indium gallium oxide / aluminum gallium oxide heterojunction is formed. The indium gallium oxide / aluminum gallium oxide heterojunction is used for replacing traditional silicon substrate doping, so that two-dimensional electron gas is prepared at the interface of the heterojunction, high carrier concentration is achieved on the premise that an ionization impurity scattering center is not introduced, the gallium oxide-based conducting layer with high carrier concentration and high mobility is prepared, and the conductivity of the gallium oxide-based conducting layer is improved. The performance of the gallium oxide device is greatly improved, and the application scene of the gallium oxide device is greatly widened.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing, and in particular to a method for producing a novel oxide heterojunction, a novel transistor, and a transparent device. Background Technology

[0002] In current technologies, to meet the low on-resistance requirements of power devices, a high carrier concentration n-type layer must be obtained. This high carrier concentration necessitates increasing the concentration of silicon dopants. However, introducing high concentrations of silicon dopants into... In the crystal lattice; then, each ionized donor impurity becomes a positively charged scattering center; finally, the high density of ionized impurity scattering centers severely restricts the movement of electrons.

[0003] In other words, existing techniques for increasing charge carriers conversely restrict electron movement, leading to a decrease in mobility and partially offsetting the advantages of high electron concentration. More seriously, at low temperatures, lattice vibrational scattering (phonon scattering) weakens, and ionized impurity scattering becomes the dominant scattering mechanism, causing mobility to drop to extremely low levels and drastically deteriorating device performance. This makes high electron concentration and high mobility an inherently contradictory proposition in existing technologies, limiting further improvements in device performance and the range of applications available for these devices.

[0004] Therefore, how to overcome the inherent contradiction between high carrier concentration and high mobility in traditional bulk doping technology has become an urgent problem for those skilled in the art. Summary of the Invention

[0005] The purpose of this invention is to provide a novel method for producing oxide heterojunctions, a novel transistor, and a transparent device, so as to solve the problem that high carrier concentration and high mobility cannot be simultaneously achieved in the prior art.

[0006] To solve the above-mentioned technical problems, the present invention provides a novel method for producing oxide heterojunctions, comprising:

[0007] Prepare the substrate;

[0008] An indium gallium oxide epitaxial layer is grown on the substrate;

[0009] An aluminum gallium oxide epitaxial layer is grown on the indium gallium oxide epitaxial layer, so that a two-dimensional electron gas is formed at the interface between the indium gallium oxide epitaxial layer and the aluminum gallium oxide epitaxial layer, thus forming an indium gallium oxide / aluminum gallium oxide heterojunction.

[0010] Optionally, in the method for producing the novel oxide heterojunction, the growth temperature of the indium gallium oxide epitaxial layer and / or the aluminum gallium oxide epitaxial layer ranges from 600 degrees Celsius to 800 degrees Celsius, including the endpoint values.

[0011] Optionally, in the method for producing the novel oxide heterojunction, the proportion of indium in the indium gallium oxide epitaxial layer ranges from 0.2 to 0.5, including the endpoint value;

[0012] The aluminum content in the aluminum gallium oxide epitaxial layer is not less than 0.6%.

[0013] Optionally, in the method for producing the novel oxide heterojunction, growing an indium gallium oxide epitaxial layer on the substrate includes:

[0014] Indium gallium oxide epitaxial layers are grown on the substrate by molecular beam epitaxy or metal-organic chemical vapor deposition.

[0015] And / or,

[0016] Growing an aluminum gallium oxide epitaxial layer on the indium gallium oxide epitaxial layer includes:

[0017] An aluminum gallium oxide epitaxial layer is grown on the indium gallium oxide epitaxial layer by molecular beam epitaxy or metal-organic chemical vapor deposition.

[0018] Optionally, in the method for producing the novel oxide heterojunction, the growth of the indium gallium oxide epitaxial layer and the aluminum gallium oxide epitaxial layer is monitored by reflection high-energy electron diffraction to obtain an atomically flat interface between the indium gallium oxide epitaxial layer and the aluminum gallium oxide epitaxial layer.

[0019] Optionally, in the method for producing the novel oxide heterojunction, the VI / III ratio during the growth process of the indium gallium oxide epitaxial layer ranges from 500 to 1500, including the endpoint values.

[0020] And / or, the VI / III ratio during the growth process of the aluminum gallium oxide epitaxial layer ranges from 300 to 1000, including endpoint values.

[0021] Optionally, in the method for producing the novel oxide heterojunction, the areal density of the indium gallium oxide / aluminum gallium oxide heterojunction is not less than 2 × 10⁻⁶. 13 cm -2 ;

[0022] And / or, the room temperature mobility of the indium gallium oxide / aluminum gallium oxide heterojunction is not less than 120 cm⁻¹. 2 / V·s.

[0023] Optionally, in the method for producing the novel oxide heterojunction, preparing the substrate includes:

[0024] Prepare the target single-crystal substrate;

[0025] Accordingly, an indium gallium oxide epitaxial layer is grown on the substrate, comprising:

[0026] An indium gallium oxide epitaxial layer is grown on the target single crystal substrate, and the indium gallium oxide epitaxial layer is subjected to in-plane compressive strain.

[0027] A novel transistor, comprising a novel oxide heterojunction produced by any of the above-described methods for producing novel oxide heterojunctions.

[0028] A transparent device, the transparent device comprising a novel oxide heterojunction produced by any of the above-described methods for producing novel oxide heterojunctions.

[0029] The present invention provides a novel method for producing oxide heterojunctions, which involves preparing a substrate; growing an indium gallium oxide (IGaO) epitaxial layer on the substrate; and growing an aluminum gallium oxide (AGaO) epitaxial layer on the IGaO epitaxial layer, thereby forming a two-dimensional electron gas at the interface between the IGaO and AGaO epitaxial layers to create an IGaO / AGaO heterojunction. This invention utilizes the IGaO / AGaO heterojunction to replace traditional silicon substrate doping, thus creating a two-dimensional electron gas at the heterojunction interface. This achieves a high carrier concentration without introducing ionized impurity scattering centers, resulting in a gallium oxide-based conductive layer with both high carrier concentration and high mobility, significantly improving the performance of gallium oxide devices and greatly expanding their application scenarios. The present invention also provides a novel transistor and transparent device with the aforementioned beneficial effects. Attached Figure Description

[0030] To more clearly illustrate the technical solutions of the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0031] Figure 1 A schematic flowchart illustrating a specific embodiment of the production method of the novel oxide heterojunction provided by the present invention;

[0032] Figure 2 A schematic diagram of the process structure of a specific embodiment of the production method of the novel oxide heterojunction provided by the present invention;

[0033] Figure 3 This is a flowchart illustrating a specific embodiment of the production method of the novel oxide heterojunction provided by the present invention.

[0034] Figure label:

[0035] 01-Substrate; 02-Indium gallium oxide epitaxial layer; 03-Aluminum gallium oxide epitaxial layer. Detailed Implementation

[0036] To enable those skilled in the art to better understand the present invention, the invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. Obviously, the described embodiments are merely some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0037] The core of this invention is to provide a novel method for producing oxide heterojunctions, and a flowchart of one specific embodiment is shown below. Figure 1 As shown, this is referred to as Specific Implementation Method One, which includes:

[0038] S101: Prepare substrate 01.

[0039] The substrate 01 can be a gallium oxide substrate 01, but other materials can also be selected as substrate 01. Before the subsequent epitaxial layer growth, the substrate 01 needs to be cleaned and pre-treated in situ. The in-situ pre-treatment may include high-temperature annealing to release internal stress in advance and improve the growth quality of the subsequent epitaxial layer.

[0040] S102: An indium gallium oxide epitaxial layer 02 is grown on the substrate 01.

[0041] In the indium gallium oxide epitaxial layer O2, the introduction of indium (In) composition can reduce the effective mass, thereby improving electron mobility. Simultaneously, In... 3+ Indium has a large ionic radius, which can reduce the localization effect of charge carriers and further enhance mobility; gallium (Ga) can provide good lattice matching and stability. The In / Ga ratio needs to be precisely optimized to balance mobility and lattice quality.

[0042] Alternatively, the proportion of indium can be represented in another way, denoteing the indium gallium oxide epitaxial layer O2 as In. x Ga 1-x O, where x represents the proportion of indium in the composition. Preferably, the proportion of indium in the indium gallium oxide epitaxial layer O2 ranges from 0.2 to 0.5, including endpoint values ​​such as any one of 0.20, 0.39, or 0.50. Within the above range, both good electron mobility and good crystal growth quality can be obtained. Of course, adjustments can be made according to actual conditions, which will not be elaborated here.

[0043] S103: An aluminum gallium oxide epitaxial layer 03 is grown on the indium gallium oxide epitaxial layer 02, so that a two-dimensional electron gas is formed at the interface between the indium gallium oxide epitaxial layer 02 and the aluminum gallium oxide epitaxial layer 03, forming an indium gallium oxide / aluminum gallium oxide heterojunction.

[0044] In the aluminum gallium oxide epitaxial layer 03, the introduction of aluminum (Al) significantly increases the bandgap, thereby increasing the conduction band difference and generating stronger spontaneous polarization. The bandgap and polarization together achieve a higher two-dimensional electron gas surface density. Gallium (Ga) can adjust the lattice constant, enabling better lattice matching with the underlying indium gallium oxide epitaxial layer 02 and substrate 01, reducing defects and improving interface quality. The final schematic diagram of the indium gallium oxide / aluminum gallium oxide heterojunction is shown below. Figure 2 As shown, at the interface between the indium gallium oxide epitaxial layer 02 and the aluminum gallium oxide epitaxial layer 03, polarization charges accumulate on the side closer to the aluminum gallium oxide epitaxial layer 03, while the two-dimensional electron gas exists on the side closer to the indium gallium oxide epitaxial layer 02.

[0045] The indium gallium oxide / aluminum gallium oxide heterojunction provided by this invention can be applied to high-performance transistors with high electron mobility. Such transistors can be further used in high-speed radio frequency communication (5G / 6G base stations, satellite communication) and high-efficiency power electronics (electric vehicles, smart grids). Alternatively, it can be used to utilize the transparent properties of the oxide epitaxial layer in transparent flexible electronic devices such as driving backplanes for wearable devices and transparent displays. Or, it can be used to apply the extremely high electron concentration and mobility of the heterojunction itself to quantum effect devices, making it possible to study quantum transport effects at low temperatures.

[0046] This invention achieves both high concentration and high mobility of two-dimensional electron gas at the interface of indium gallium oxide / aluminum gallium oxide heterojunction through ingenious material selection and band structure design, providing a core material platform for the fabrication of next-generation high-performance electronic devices.

[0047] Similarly, to represent the aluminum percentage in a different way, the aluminum gallium oxide epitaxial layer 03 is represented as Al. y Ga 1-y O, where y represents the proportion of aluminum in the composition. Preferably, the proportion of aluminum in the aluminum gallium oxide epitaxial layer O3 is not less than 0.6. A more effective and powerful planning effect and band shift can be achieved within the above range. Of course, adjustments can be made according to actual conditions, which will not be elaborated further here.

[0048] On the one hand, both indium gallium oxide (IGaO) and aluminum gallium oxide (AGaO) are non-centrosymmetric crystal structures with strong fixed electric dipole moments, i.e., spontaneous polarization. The spontaneous polarization intensity of AGaO is much greater than that of IGaO. At the heterojunction interface, this discontinuity in polarization intensity generates a fixed positive polarization charge, attracting electrons to accumulate on the IGaO side. On the other hand, the band gap of AGaO is much larger than that of IGaO, creating a large conduction band difference at the heterojunction interface, resulting in a steep triangular potential well on the IGaO side. The combined effect of these two factors confines the electrons provided by the polarization charge within this triangular potential well, forming a two-dimensional electron gas. This gas formation is dopant-independent, avoiding ionized impurity scattering, which is crucial for achieving high mobility in this invention.

[0049] In a preferred embodiment, the growth temperature of the indium gallium oxide epitaxial layer 02 and / or the aluminum gallium oxide epitaxial layer 03 is in the range of 600 degrees Celsius to 800 degrees Celsius, including endpoint values ​​such as 600.0 degrees Celsius, 688.4 degrees Celsius, or 800.0 degrees Celsius. This temperature range is a preferred range obtained after extensive theoretical calculations and practical verification. Within this range, the crystal quality of the indium gallium oxide epitaxial layer 02 and the aluminum gallium oxide epitaxial layer 03 is significantly improved, and heteroepitaxial growth is promoted. Of course, adjustments can be made according to actual conditions, and this invention does not limit this.

[0050] In a preferred embodiment, an indium gallium oxide epitaxial layer 02 is grown on the substrate 01, comprising:

[0051] An indium gallium oxide epitaxial layer 02 is grown on the substrate 01 by molecular beam epitaxy or metal-organic chemical vapor deposition.

[0052] Further, an aluminum gallium oxide epitaxial layer 03 is grown on the indium gallium oxide epitaxial layer 02, comprising:

[0053] An aluminum gallium oxide epitaxial layer 03 is grown on the indium gallium oxide epitaxial layer 02 by molecular beam epitaxy or metal-organic chemical vapor deposition.

[0054] In other words, both the indium gallium oxide epitaxial layer 02 and the aluminum gallium oxide epitaxial layer 03 can be grown by molecular beam epitaxy (MBE) or metal-organic chemical vapor deposition (MOCVD). MBE offers greater controllability and higher precision, resulting in a smoother interface of the heterojunction and higher product yield. MOCVD is lower in cost, more suitable for mass production, and more versatile. The appropriate production technology can be selected according to actual needs, or other methods can be used to grow the epitaxial layer. This invention does not limit the choice of these methods.

[0055] Furthermore, the growth of the indium gallium oxide epitaxial layer 02 and the aluminum gallium oxide epitaxial layer 03 is monitored by reflection high-energy electron diffraction to obtain an atomically flat interface between the indium gallium oxide epitaxial layer 02 and the aluminum gallium oxide epitaxial layer 03.

[0056] During the growth of the indium gallium oxide epitaxial layer 02 and the aluminum gallium oxide epitaxial layer 03, the growth mode and surface quality of the epitaxial layer are monitored throughout the process using the reflected high-energy electron diffraction method, ensuring an atomically flat interface and significantly reducing ionized impurity scattering and interface roughness scattering, thereby guaranteeing high room temperature mobility.

[0057] Furthermore, the VI / III ratio during the growth process of the indium gallium oxide epitaxial layer O2 ranges from 500 to 1500, including endpoint values ​​such as any one of 500.0, 1243.1, or 1500.0;

[0058] And / or, the VI / III ratio during the growth of the aluminum gallium oxide epitaxial layer 03 ranges from 300 to 1000, including endpoint values ​​such as any one of 300.0, 588.7 or 1000.0.

[0059] The VI / III ratio refers to the molar flow rate of the group VI element precursor (usually an oxygen source) to the group III metal-organic source in the reaction chamber. By optimizing the VI / III ratio, the oxygen partial pressure during the epitaxial layer growth process can be precisely controlled, which can significantly suppress oxygen vacancy defects, reduce scattering centers, and ensure sufficient carrier supply. This suppresses scattering, improves mobility, and ensures carrier concentration.

[0060] Specifically, the areal density of the indium gallium oxide / aluminum gallium oxide heterojunction is not less than 2 × 10⁻⁶. 13 cm -2 ;

[0061] And / or, the room temperature mobility of the indium gallium oxide / aluminum gallium oxide heterojunction is not less than 120 cm⁻¹. 2 / V·s.

[0062] Within the aforementioned areal density and room temperature mobility range, the indium gallium oxide / aluminum gallium oxide heterojunction possesses sufficient carrier concentration and mobility to meet the requirements of power devices for low on-resistance. Of course, adjustments can be made according to actual needs, which are not limited herein.

[0063] The present invention provides a novel method for producing oxide heterojunctions. This method involves preparing a substrate 01; growing an indium gallium oxide (IGaO) epitaxial layer 02 on the substrate 01; and growing an aluminum gallium oxide (AGaO) epitaxial layer 03 on the IGaO epitaxial layer 02. A two-dimensional electron gas is formed at the interface between the IGaO epitaxial layer 02 and the AGaO epitaxial layer 03, thus forming an IGaO / AGaO heterojunction. This invention utilizes the IGaO / AGaO heterojunction to replace traditional silicon substrate doping, thereby creating a two-dimensional electron gas at the heterojunction interface. This achieves a high carrier concentration without introducing ionized impurity scattering centers, resulting in a gallium oxide-based conductive layer with both high carrier concentration and high mobility. This significantly improves the performance of gallium oxide devices and greatly expands their application scenarios.

[0064] Based on Specific Implementation Method 1, the growth method of the indium gallium oxide epitaxial layer O2 is further specified to obtain Specific Implementation Method 2, the corresponding flowchart of which is shown below. Figure 3 As shown, it includes:

[0065] S201: Prepare the target single crystal substrate 01.

[0066] S202: An indium gallium oxide epitaxial layer 02 is grown on the target single crystal substrate 01, and the indium gallium oxide epitaxial layer 02 is subjected to in-plane compressive strain.

[0067] S203: An aluminum gallium oxide epitaxial layer 03 is grown on the indium gallium oxide epitaxial layer 02, so that a two-dimensional electron gas is formed at the interface between the indium gallium oxide epitaxial layer 02 and the aluminum gallium oxide epitaxial layer 03, forming an indium gallium oxide / aluminum gallium oxide heterojunction.

[0068] The difference between this specific embodiment and the above specific embodiment is that the indium gallium oxide epitaxial layer 02 in this specific embodiment is an epitaxial layer grown under in-plane compressive strain conditions. The remaining steps are the same as those in the above specific embodiment, and will not be described in detail here.

[0069] In this preferred embodiment, by growing on a specific single-crystal substrate 01 (i.e., the target single-crystal substrate 01), the indium gallium oxide epitaxial layer 02 is subjected to in-plane compressive strain. This strain can further induce piezoelectric polarization, which, combined with the spontaneous polarization of the aluminum gallium oxide epitaxial layer 03, enhances the discontinuity of the total polarization intensity, thereby further increasing the two-dimensional electron gas concentration.

[0070] This invention also provides a novel transistor, comprising a novel oxide heterojunction produced by any of the above-described methods for producing novel oxide heterojunctions. The method for producing the novel oxide heterojunction provided by this invention involves preparing a substrate 01; growing an indium gallium oxide (IGaO) epitaxial layer 02 on the substrate 01; and growing an aluminum gallium oxide (AGaO) epitaxial layer 03 on the IGaO epitaxial layer 02, thereby forming a two-dimensional electron gas at the interface between the IGaO epitaxial layer 02 and the AGaO epitaxial layer 03, thus forming an IGaO / AGaO heterojunction. This invention utilizes an IGaO / AGaO heterojunction to replace traditional silicon substrate doping, thereby preparing a two-dimensional electron gas at the interface of the heterojunction. This achieves a high carrier concentration without introducing ionized impurity scattering centers, producing a gallium oxide-based conductive layer with both high carrier concentration and high mobility, significantly improving the performance of gallium oxide devices and greatly expanding their application scenarios.

[0071] This invention also provides a transparent device, comprising a novel oxide heterojunction produced by any of the above-described methods for producing novel oxide heterojunctions. The method for producing the novel oxide heterojunction provided by this invention involves preparing a substrate 01; growing an indium gallium oxide (IGaO) epitaxial layer 02 on the substrate 01; and growing an aluminum gallium oxide (AGaO) epitaxial layer 03 on the IGaO epitaxial layer 02, thereby forming a two-dimensional electron gas at the interface between the IGaO epitaxial layer 02 and the AGaO epitaxial layer 03, thus forming an IGaO / AGaO heterojunction. This invention utilizes an IGaO / AGaO heterojunction to replace traditional silicon substrate doping, thereby preparing a two-dimensional electron gas at the interface of the heterojunction. This achieves a high carrier concentration without introducing ionized impurity scattering centers, producing a gallium oxide-based conductive layer with both high carrier concentration and high mobility, significantly improving the performance of gallium oxide devices and greatly expanding their application scenarios.

[0072] The various embodiments in this specification are described in a progressive manner, with each embodiment focusing on its differences from other embodiments. Similar or identical parts between embodiments can be referred to interchangeably. For the apparatus disclosed in the embodiments, since it corresponds to the method disclosed in the embodiments, the description is relatively simple; relevant parts can be referred to in the method section.

[0073] It should be noted that, in this specification, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0074] The above provides a detailed description of the production method of the novel oxide heterojunction, the novel transistor, and the transparent device provided by this invention. Specific examples have been used to illustrate the principles and implementation methods of this invention. The descriptions of the above embodiments are merely for the purpose of helping to understand the method and core ideas of this invention. It should be noted that those skilled in the art can make various improvements and modifications to this invention without departing from its principles, and these improvements and modifications also fall within the protection scope of this invention.

Claims

1. A method for producing a novel oxide heterojunction, characterized in that, include: Prepare the substrate; An indium gallium oxide epitaxial layer is grown on the substrate; An aluminum gallium oxide epitaxial layer is grown on the indium gallium oxide epitaxial layer, so that a two-dimensional electron gas is formed at the interface between the indium gallium oxide epitaxial layer and the aluminum gallium oxide epitaxial layer, thus forming an indium gallium oxide / aluminum gallium oxide heterojunction.

2. The method for producing the novel oxide heterojunction as described in claim 1, characterized in that, The growth temperature range of the indium gallium oxide epitaxial layer and / or the aluminum gallium oxide epitaxial layer is 600 degrees Celsius to 800 degrees Celsius, including the endpoint values.

3. The method for producing the novel oxide heterojunction as described in claim 1, characterized in that, The proportion of indium in the indium gallium oxide epitaxial layer ranges from 0.2 to 0.5, including the endpoint values; The aluminum content in the aluminum gallium oxide epitaxial layer is not less than 0.6%.

4. The method for producing the novel oxide heterojunction as described in claim 1, characterized in that, Growing an indium gallium oxide epitaxial layer on the substrate includes: Indium gallium oxide epitaxial layers are grown on the substrate by molecular beam epitaxy or metal-organic chemical vapor deposition. And / or, Growing an aluminum gallium oxide epitaxial layer on the indium gallium oxide epitaxial layer includes: An aluminum gallium oxide epitaxial layer is grown on the indium gallium oxide epitaxial layer by molecular beam epitaxy or metal-organic chemical vapor deposition.

5. The method for producing the novel oxide heterojunction as described in claim 1, characterized in that, The growth of the indium gallium oxide epitaxial layer and the aluminum gallium oxide epitaxial layer was monitored by reflection high-energy electron diffraction to obtain an atomically flat interface between the indium gallium oxide epitaxial layer and the aluminum gallium oxide epitaxial layer.

6. The method for producing the novel oxide heterojunction as described in claim 1, characterized in that, The VI / III ratio during the growth process of the indium gallium oxide epitaxial layer ranges from 500 to 1500, including the endpoint values; And / or, the VI / III ratio during the growth process of the aluminum gallium oxide epitaxial layer ranges from 300 to 1000, including endpoint values.

7. The method for producing the novel oxide heterojunction as described in claim 1, characterized in that, The areal density of the indium gallium oxide / aluminum gallium oxide heterojunction is not less than 2×10⁻⁶. 13 cm -2 ; And / or, the room temperature mobility of the indium gallium oxide / aluminum gallium oxide heterojunction is not less than 120 cm⁻¹. 2 / V·s.

8. The method for producing the novel oxide heterojunction as described in any one of claims 1 to 7, characterized in that, Preparing the substrate includes: Prepare the target single-crystal substrate; Accordingly, an indium gallium oxide epitaxial layer is grown on the substrate, comprising: An indium gallium oxide epitaxial layer is grown on the target single crystal substrate, and the indium gallium oxide epitaxial layer is subjected to in-plane compressive strain.

9. A novel transistor, characterized in that, The novel transistor includes a novel oxide heterojunction produced by the method for producing a novel oxide heterojunction as described in any one of claims 1 to 8.

10. A transparent device, characterized in that, The transparent device includes a novel oxide heterojunction produced by the production method of the novel oxide heterojunction as described in any one of claims 1 to 8.

Images