Method and system for power control

Abstract

A method of controlling an electrical load associated with an electrical drive system includes receiving the electrical load at a plurality of metal oxide semiconductor field effect transistors (MOSFETs), where the plurality of MOSFETs is composed of a set of high side MOSFETs and a set of low side MOSFETs. A first MOSFET of the set of low voltage side MOSFETs is turned on based on a positive cycle of the electrical load. A first MOSFET of the set of high voltage side MOSFETs and a second MOSFET of the set of low voltage side MOSFETs are switched on and off based on a positive cycle of the electrical load. At least one boost capacitor associated with the plurality of MOSFETs is intermittently clamped.

Description

[0001] Cross-reference to related applications

[0002] This international application claims priority and benefit to U.S. Provisional Application 63 / 517,555, filed August 3, 2023. The disclosure of the aforementioned application is incorporated herein by reference in its entirety. Technical Field

[0003] This disclosure relates to power control within an electric drive system. Background Technology

[0004] The descriptions in this section provide only background information relevant to this disclosure and may not constitute prior art.

[0005] Electric vehicles (including ground vehicles and aircraft) are typically powered by an electric system that supplies power to an electric drive system with an electric motor and one or more power buses for powering additional equipment within the electric vehicle. In some current architectures used in electric systems, the current electric drive system may require custom design for each model, which can lead to slower component development and a non-scalable electric system, limiting opportunities for easy upgrades. Furthermore, the filtering units used in some current architectures can increase the size and weight of the overall system. This disclosure addresses these and other issues related to electric systems. Summary of the Invention

[0006] This section provides a general overview of this disclosure and is not a full disclosure of its entire scope or all its features.

[0007] This disclosure provides a method for controlling electrical loads or power supply associated with an electric drive system or battery charging system, the system including a plurality of power assembly modules configured as intelligent integrated modules (SIMs), the method comprising: providing a digital controller for each SIM—wherein the digital controller is configured to collect local measurements of the associated SIM and send signals to a string or motor digital controller; providing a controller area network transceiver for each SIM, the transceiver being configured to communicate between the SIM digital controller and the string or motor digital controller; and providing a bidirectional DC-DC converter or a unidirectional DC-DC converter for each SIM, the converter being configured to provide regulated DC power to one or more system auxiliary loads. C output voltage; provides a bidirectional DC-AC inverter for each SIM, the inverter being configured to receive a power load or power supply at multiple metal-oxide-semiconductor field-effect transistors (MOSFETs), wherein the multiple MOSFETs consist of a set of high-side MOSFETs and a set of low-side MOSFETs; based on the positive cycle of the power load, turns on the first MOSFET in the set of low-side MOSFETs; based on the positive cycle of the power load, switches on and off the first MOSFET in the set of high-side MOSFETs and the second MOSFET in the set of low-side MOSFETs; and based on the first MOSFET in the set of low-side MOSFETs being turned on and the second MOSFET in the set of high-side MOSFETs being turned off... The first MOSFET and the second MOSFET in the group of low-side MOSFETs are switched on and off, intermittently clamping at least one boost capacitor associated with the plurality of MOSFETs, wherein the intermittent clamping keeps at least one boost capacitor above a low threshold; wherein when the second MOSFET in the group of low-side MOSFETs is off, the first MOSFET in the group of high-side MOSFETs is on, and when the second MOSFET in the group of low-side MOSFETs is on, the first MOSFET in the group of high-side MOSFETs is off; wherein the first MOSFET in the group of low-side MOSFETs is kept on at a low frequency; wherein the group of high-side MOSFETs... The switching of the first MOSFET in ET and the second MOSFET in the group of low-voltage-side MOSFETs is performed at a high frequency; further comprising: intermittently declamping at least one boost capacitor associated with multiple MOSFETs based on the distribution of the power load; further comprising: determining a fault based on the failure of a battery module associated with multiple MOSFETs and at least one boost capacitor, wherein the fault is one or more of the following: battery module failure, high-voltage-side short-circuit fault, low-voltage-side short-circuit fault, high-voltage-side open-circuit fault, low-voltage-side open-circuit fault, and unknown fault; further comprising: balancing the output current distribution based on the parallel connection between one or more DC-to-DC converters of the electric vehicle and an adaptive virtual resistor;And series connection and virtual admittance between one or more DC-to-DC converters based on electric vehicles, while simultaneously balancing output voltage distribution; further comprising: sending one or more signals to a controller area network transceiver, wherein the controller area network transceiver is configured to communicate with a microcontroller, and wherein the microcontroller is connected to a main ground line shared with multiple MOSFETs or an inverter-side ground line associated with multiple MOSFETs.

[0008] This disclosure provides a system for controlling an electrical load associated with an electric vehicle. The system includes: a plurality of electrically connected powertrain modules, wherein each of the electrically connected powertrain modules further includes: a plurality of metal-oxide-semiconductor field-effect transistors (MOSFETs) configured to: receive the electrical load, wherein the plurality of MOSFETs comprises a set of high-side MOSFETs and a set of low-side MOSFETs, and based on a positive cycle of the electrical load, turns on a first MOSFET in the set of low-side MOSFETs, and switches on and off the first MOSFET in the set of high-side MOSFETs and the second MOSFET in the set of low-side MOSFETs based on a positive cycle; at least A boost capacitor configured to intermittently clamp the boost capacitor associated with a plurality of MOSFETs based on the switching on and off of a first MOSFET in a group of low-side MOSFETs and a first MOSFET in a group of high-side MOSFETs and a second MOSFET in a group of low-side MOSFETs, wherein clamping keeps at least one boost capacitor above a lower threshold; and one or more gate drivers configured to turn on the first MOSFET in the group of low-side MOSFETs based on a positive cycle of the power load, and to turn on the first MOSFET in the group of high-side MOSFETs and a second MOSFET in the group of low-side MOSFETs based on a positive cycle. The second MOSFET is switched on and off; wherein, when the second MOSFET in the low-side MOSFET group is off, the first MOSFET in the high-side MOSFET group is on, and when the second MOSFET in the low-side MOSFET group is on, the first MOSFET in the high-side MOSFET group is off; wherein, the first MOSFET in the low-side MOSFET group is kept on at a low frequency; wherein, the switching on and off of the first MOSFET in the high-side MOSFET group and the second MOSFET in the low-side MOSFET group is switched at a high frequency; wherein, at least one boost capacitor is further configured to: based on the distribution of the power load, make... At least one boost capacitor associated with multiple MOSFETs is intermittently declamped; wherein each module in the electrically connected powertrain modules further includes: a battery module configured to: determine a fault based on the failure of the battery module associated with the multiple MOSFETs and at least one boost capacitor, wherein the fault is one or more of the following: battery module fault, high-voltage side short-circuit fault, low-voltage side short-circuit fault, high-voltage side open-circuit fault, low-voltage side open-circuit fault, and unknown fault; wherein each module in the multiple electrically connected powertrain modules further includes: a control structure configured to: balance the output current distribution based on the parallel connection between one or more DC-to-DC converters of the electric vehicle and an adaptive virtual resistor;And series connection and virtual admittance between one or more DC-to-DC converters based on electric vehicles, simultaneously balancing output voltage distribution; wherein each module in the electrically connected powertrain module further includes: a DC-to-DC converter configured to: send one or more signals to a controller area network transceiver, wherein the controller area network transceiver is configured to communicate with a microcontroller, and wherein the microcontroller is connected to a main ground line shared with multiple MOSFETs or an inverter-side ground line associated with multiple MOSFETs.

[0009] This disclosure provides a method for controlling an electrical load associated with an electric vehicle, comprising: receiving an electrical load at a plurality of metal-oxide-semiconductor field-effect transistors (MOSFETs), wherein the plurality of MOSFETs comprises a set of high-side MOSFETs and a set of low-side MOSFETs; turning on a second MOSFET in the set of low-side MOSFETs based on a negative cycle of the electrical load; switching on and off the second MOSFET in the set of high-side MOSFETs and a first MOSFET in the set of low-side MOSFETs based on a negative cycle of the electrical load; and, based on the second MOSFET in the set of low-side MOSFETs being turned on and the second MOSFET in the set of high-side MOSFETs and the first MOSFET in the set of low-side MOSFETs being switched on and off, causing the power load associated with the plurality of MOSFETs to be switched on and off. The method includes: intermittently clamping at least one boost capacitor, wherein the intermittent clamping keeps at least one boost capacitor above a lower threshold; wherein when the first MOSFET in the group of low-voltage side MOSFETs is turned off, the second MOSFET in the group of high-voltage side MOSFETs is turned on, and when the first MOSFET in the group of low-voltage side MOSFETs is turned on, the second MOSFET in the group of high-voltage side MOSFETs is turned off; further comprising: intermittently declamping at least one boost capacitor associated with multiple MOSFETs based on the distribution of the power load; further comprising: determining a fault based on the failure of a battery module associated with multiple MOSFETs and at least one boost capacitor, wherein the fault is one or more of the following: battery module failure, high-voltage side short-circuit fault, low-voltage side short-circuit fault, high-voltage side open-circuit fault, low-voltage side open-circuit fault, and unknown fault.

[0010] Other aspects of the application will become apparent from the description provided herein. It should be understood that the descriptions and specific examples are for illustrative purposes only and are not intended to limit the scope of this disclosure. Attached Figure Description

[0011] To make this disclosure readily understandable, its various forms will now be described by way of example and with reference to the accompanying drawings, wherein:

[0012] Figure 1 is a schematic diagram of a power conversion system according to various embodiments;

[0013] Figure 2 This is a first embodiment of a schematic diagram of components of a power conversion system according to various implementation methods;

[0014] Figure 3 It is a graphical representation of the system reference signal and carrier signal according to various implementations;

[0015] Figure 4 This is a second embodiment of a schematic diagram of components of a power conversion system according to various implementation methods;

[0016] Figure 5 This is a third embodiment of a schematic diagram of components of a power conversion system according to various implementation methods;

[0017] Figure 6 This is yet another embodiment of a schematic diagram of components of a power conversion system according to various implementation methods;

[0018] Figure 7 This is a flowchart illustrating example methods for controlling electricity in an electric vehicle according to various embodiments; and

[0019] Figure 8 This is a flowchart illustrating another example method for controlling electricity in an electric vehicle according to various embodiments.

[0020] The accompanying drawings described herein are for illustrative purposes only and are not intended to limit the scope of this disclosure in any way. Detailed Implementation

[0021] The following description is exemplary only and is not intended to limit the scope, application, or purpose of this disclosure. It should be understood that in all the drawings, corresponding reference numerals denote the same or corresponding parts and features.

[0022] This disclosure provides a means for controlling the electrical power of an electric vehicle. Various systems and methods associated with the electrical control of electric vehicles are illustrated and described in International Application No. PCT / US2023 / 011513, the entire contents of which are incorporated herein by reference. For example, one or more systems and methods described herein provide a way to reduce the size and / or weight of systems (e.g., powertrains) implemented within an electric vehicle while expanding the range in which the electric vehicle can travel. As another example, the one or more systems and methods allow the same electric drive system to be implemented in any type of electric vehicle—e.g., in different types of electric vehicles.

[0023] Referring to Figure 1, a vehicle (not shown), such as an automobile, aircraft, boat, or any other electric vehicle, is equipped with an electric system 100, among other components. The electric system 100 also includes multiple power control modules, which in some examples are configured as intelligent integrated modules (SIMs) 102a-102h. Each of the multiple SIMs 102a-102h includes at least one battery module 104a-104h electrically connected to at least one power assembly module 106a-106h. While the electric system 100 shown in Figure 1 depicts a total of eight electrically connected SIMs 102a-102h, it should be understood that the electric system 100 may include additional or fewer SIMs depending on the needs or expectations of any application.

[0024] Multiple SIMs 102a-102h are electrically connected to at least one bus. As another example, one group of SIMs 102a-102h may be electrically connected to bus 108a with a first voltage such as 12 V, while another group of SIMs 102a-102h may be electrically connected to another bus 108b with a second voltage such as 48 V, different from the first voltage. It should be understood that each group of SIMs 102a-102h and each bus 108a, 108b is included within the power system 100, and the buses may have different voltages. Figure 1 also depicts AC power being supplied to the motor and / or AC charger. Additionally, each of the two buses 108a, 108b is connected to an auxiliary load of the vehicle. In various examples, the power system 100 is configured to implement single-phase, three-phase, and / or multi-phase applications.

[0025] Each of the multiple SIMs 102a-102h includes a DC-to-AC inverter, a DC-to-DC converter, on-board DC and on-board AC power supplies, a battery management system, and an electric controller. The DC-to-AC inverter is configured to generate AC power from the battery module to an electric motor associated with the power system 100. For example, the electric motor is a motor that provides power to a vehicle. In one embodiment, the DC-to-AC inverter is configured as a three-level inverter, its power electronics consisting of power electronic switches, which may be metal-oxide-semiconductor field-effect transistors (MOSFETs), insulated-gate bipolar transistors (IGBTs), thyristors, or gate-off thyristors (GTOs). The power electronic switches can be operated by a power controller (not shown) to generate the desired drive power output. In one form, the DC-to-AC inverter is configured as a bidirectional inverter, its output terminals interconnected in series and parallel configurations to provide power to the electric motor. It should be readily understood that the DC-to-AC inverter may include additional and / or other components and should not be limited to those described herein. For example, a DC-to-AC inverter may include filters and / or components to isolate the DC-to-AC inverter from a DC-to-DC converter.

[0026] The DC-to-DC converter is configured to generate DC power from the battery modules 104a-104h of each of the multiple SIMs 102a-102h to an auxiliary load. The DC-to-DC converter is configured as an isolated converter having electronic components such as, but not limited to, flyback converters, half-bridge circuits, full-bridge circuits, and / or inductors and capacitors. In one embodiment, the DC-to-DC converter provides a regulated DC output at a 12 V or 48 V level. However, the DC-to-DC converter can be configured in various suitable ways to provide auxiliary power output to one or more buses 108a, 108b, alone or in conjunction with other DC-to-DC converters, and should not be limited to the configuration shown in Figure 1. In one form, the DC-to-DC converter is a bidirectional converter. It should be readily understood that the DC-to-DC converter may include additional and / or other components and should not be limited to those described herein. For example, the DC-to-DC converter may include filters, and / or may not include components that isolate the DC-to-DC converter from the DC-to-AC inverter.

[0027] Both the on-board DC charger and the on-board AC charger are configured to charge the battery modules 104a-104h of each of the multiple SIMs 102a-102h from the grid or any other power source. The battery management system is configured to at least control, monitor, and / or protect the battery modules 104a-104h of each of the multiple SIMs 102a-102h. The electric controller is configured to digitally control each subsystem associated with the power system 100 using local measurements. However, it should be understood that the electric controller is configured to digitally control each subsystem associated with the power system 100 using any measured values.

[0028] like Figure 2 As shown, the inverter described above, disposed within each of the plurality of SIMs 102a-102h, may include a gate driver and a battery assembly 200. The gate driver and battery assembly 200 include at least non-isolated gate drivers 202a and 202b, boost capacitors 204a and 204b, high-side MOSFET groups 206a and 206b, and low-side MOSFET groups 208a and 208b. It should be understood that the gate driver and battery assembly 200 may include additional and / or other components and should not be limited to these components. Figure 2 The circuit configuration shown.

[0029] In some examples, a Hybrid Frequency Switching (HyFS) control scheme or method is implemented to operate the gate driver and battery assembly 200 such that the gate driver and battery assembly 200 can control ultra-high and ultra-low duty cycles associated with auxiliary loads. For example, the HyFS control scheme or method is implemented to operate the gate driver and battery assembly 200 such that the gate driver and battery assembly 200 can handle ultra-high and ultra-low duty cycles associated with auxiliary loads. HyFS specifies that when the gate driver and battery assembly 200 operate in a positive cycle, the first low-side MOSFET 208a is configured to remain active (e.g., on), while the second low-side MOSFET 208b and the first high-side MOSFET 206a are configured to switch on and off at a high frequency. However, it should be understood that the second low-side MOSFET 208b and the first high-side MOSFET 206a are configured to switch on and off at arbitrary frequencies.

[0030] HyFS also specifies that when the gate driver and battery assembly 200 are operating in a negative cycle, the second low-side MOSFET 208a is configured to remain active (e.g., on), while the first low-side MOSFET 208b and the second high-side MOSFET 206a are configured to switch on and off at a high frequency. However, it should be understood that the first low-side MOSFET 208b and the second high-side MOSFET 206a are configured to switch on and off at any frequency.

[0031] In various examples, because the low-side MOSFETs 208a and 208b remain active in each of the positive and negative cycles, the boost capacitors 204a and 204b may deplete any charge stored therein. To mitigate this problem, the gate driver and battery assembly 200 implement multiple charging pulses such that the energy stored within the boost capacitors 204a and 204b remains at least above a lower threshold. For example, as the boost capacitors 204a and 204b are charged to an allowable threshold, they are clamped at the power interval. As an alternative example, when the boost capacitors 204a and 204b are distributing power, they are declamped at the power interval when the power level approaches the lower threshold.

[0032] See Figure 3 The diagram illustrates a schematic 300, which includes a reference signal 302 and multiple carrier signals 304a-304d. The reference signal 302 is shown as a sinusoidal waveform, representing the positive or negative state of the duty cycle entering each of the multiple SIMs. The rising trajectory of the reference signal 302 corresponds to the positive period. The peak 306 of the reference signal 302 represents the duty cycle at 100% load. The falling trajectory of the reference signal 302 corresponds to the negative period. The trough 308 of the reference period 302 represents the duty cycle at 0% load. It should be understood that the gate driver and battery assembly 200 can handle... Figure 3 Any load associated with any range (i.e., 0%-100%) within the duty cycle indicated in the figure.

[0033] Carrier signals 304a-304d are shown as triangular waveforms representing the clamping / unclamping of boost capacitors 204a and 204b. For example, carrier signals 304a-304d show that when the triangular waveform is on an upward trajectory, boost capacitors 204a and 204b are in a clamped state; while when the triangular waveform is on a downward trajectory, boost capacitors 204a and 204b are in an unclamped state. It should be understood that the charge range associated with boost capacitors 204a and 204b is limited to a lower threshold. It should be further understood that said lower threshold can vary based on a specific boost capacitor 204a and 204b associated with a specific SIM among the plurality of SIMs 102a-102h.

[0034] Several measures have been implemented to protect the integrity of each of the multiple SIMs 102a-102h and their associated battery modules 104a-104h. A specific set of measures implemented to protect the integrity of each of the multiple SIMs 102a-102h and their associated battery modules 104a-104h will now be described. However, it should be understood that the specific set of measures implemented below to protect the integrity of each of the multiple SIMs 102a-102h and their associated battery modules 104a-104h is not an exhaustive list. For example, the high-voltage side MOSFETs 206a, 206b and the low-voltage side MOSFETs 208a, 208b are configured to switch between on and / or off to mitigate potential faults within any of the multiple SIMs 102a-102h. As another example, the high-voltage side group MOSFETs 206a, 206b and the low-voltage side group MOSFETs 208a, 208b can be configured to switch between on and / or off to signal a specific fault in any one of the multiple SIMs 102a-102h.

[0035] like Figure 4 As shown, in addition to the high-side group MOSFETs 206a and 206b and the low-side group MOSFETs 208a and 208b, each of the plurality of SIMs 102a-102h may include an additional protection MOSFET 400, which may serve as a backup MOSFET and / or a safety sensing MOSFET. However, it should be understood that the additional protection MOSFET 400 may operate in any reasonable manner in association with the circuitry of the plurality of SIMs 102a-102h as shown in Figures 1, 2, and / or 4.

[0036] For example, it can be determined whether a battery module is faulty. If a battery module is determined to be faulty, the affected battery module is isolated. In some examples, the high-side MOSFETs 206a, 206b and the low-side MOSFETs 208a, 208b indicate a battery module fault in one of three ways: 1)

[0038] 2)

[0040] 3)

[0042]

[0043] As another example, a high-voltage side short-circuit fault may be detected. In the event of a high-voltage side short-circuit fault, the affected SIMs in multiple SIMs 102a-102h will be bypassed. In some examples, the high-voltage side MOSFETs 206a, 206b and the low-voltage side MOSFETs 204a, 204b indicate the high-voltage side short-circuit fault in one of two ways: 1)

[0045] 2)

[0047]

[0048] As another example, a low-side short-circuit fault may be detected. In the event of a low-side short-circuit fault, the affected SIMs in multiple SIMs 102a-102h will be bypassed. In some examples, the high-side MOSFETs 206a, 206b and the low-side MOSFETs 204a, 204b indicate a high-side short-circuit fault in one of two ways: 1)

[0050] 2)

[0052]

[0053] For example, a high-voltage side open-circuit fault may be detected. In the event of a high-voltage side open-circuit fault, the affected SIMs among multiple SIMs 102a-102h will be bypassed. In some examples, the high-voltage side MOSFETs 206a, 206b and the low-voltage side MOSFETs 204a, 204b indicate a high-voltage side short-circuit fault in one of two ways: 1)

[0055] 2)

[0057]

[0058] For example, a low-side open-circuit fault might be detected. In the event of a low-side open-circuit fault, the affected SIMs in multiple SIMs 102a-102h will be bypassed. In some examples, the high-side MOSFETs 206a, 206b and the low-side MOSFETs 204a, 204b indicate a high-side short-circuit fault in one of two ways: 1)

[0060] 2)

[0062]

[0063] For example, if an unknown fault is determined to exist on either the high-voltage side or the low-voltage side of the circuit, the affected SIMs in multiple SIMs 102a-102h are also bypassed. In some examples, the high-voltage side MOSFETs 206a, 206b and the low-voltage side MOSFETs 204a, 204b indicate a high-voltage side short-circuit fault in the following manner:

[0064]

[0065] Figure 5 The diagram illustrates a control structure 500 associated with each of the multiple SIMs. Control structure 500 allows the output power of the DC-to-DC converters of each of the multiple SIMs 102a-102h to ultimately power the vehicle's electric motor, based on any demand and / or application of the power system 100. It should be understood that at any given time, the output power of the DC-to-DC converters of each of the multiple SIMs 102a-102h is distributed within the power system 100 to ultimately power the vehicle's electric motor.

[0066] In various examples, control structure 500 is configured based on adaptive droop control theory as follows: Figure 5 As shown, and used in the power supply for DC-DC converters connected to DC microgrids, to allow DC-DC converters to be connected with parallel or series outputs.

[0067] In one embodiment, when the DC-DC converters are connected in parallel, an adaptive virtual resistor is used to ensure balanced output current distribution. As a result, the output power of the DC-DC converters is also balanced. In another embodiment, when the DC-DC converters are connected in series, an adaptive virtual resistor is used to ensure balanced output voltage distribution. As a result, the output power of the DC-DC converters is also balanced. It should be understood that current distribution and voltage distribution balancing can be achieved simultaneously. It should be understood that the control structure 500 can utilize a string controller to coordinate power management among different SIMs in the multiple SIMs 102a-102h. It should also be understood that the control structure 500 can operate in a communication-free manner by using the DC bus current and DC bus voltage as reference signals for the DC-DC converters of each SIM in the multiple SIMs 102a-102h.

[0068] Figure 6 Embodiment 600 is illustrated, in which the DC-DC converter outputs from each of the plurality of SIMs 102a-102h are enabled to power one or more integrated circuit chips on the control side and inverter side of the respective SIM. For example, isolated DC-DC converters provide one or more signals to isolated controller area network transceivers. The controller area network transceivers then communicate with a microcontroller connected to the main ground or inverter-side ground.

[0069] Figure 7 This is a flowchart illustrating an example method 700 for controlling an electrical load or power supply. For example, example method 700 is a method for controlling an electrical load or power supply associated with an electric vehicle. In step 702, the electrical load or power supply is received at a plurality of metal-oxide-semiconductor field-effect transistors (MOSFETs). For example, the plurality of MOSFETs consists of a set of high-side MOSFETs and a set of low-side MOSFETs. As another example, a plurality of electrically connected powertrain modules are configured as a SIM, wherein the SIM consists of a plurality of MOSFETs.

[0070] In step 704, the first MOSFET in the group of low-voltage-side MOSFETs is turned on. For example, the first MOSFET in the group of low-voltage-side MOSFETs is turned on based on a positive cycle of the power load or power supply. As another example, the first MOSFET in the group of low-voltage-side MOSFETs remains on at low frequencies and / or during positive cycles, while the second MOSFET in the group of high-voltage-side MOSFETs remains off during positive cycles.

[0071] In step 706, the first MOSFET in the high-voltage side MOSFET group and the second MOSFET in the low-voltage side MOSFET group are switched on and off. For example, the first MOSFET in the high-voltage side MOSFET group and the second MOSFET in the low-voltage side MOSFET group are switched on and off based on a positive cycle. As another example, when the second MOSFET in the low-voltage side MOSFET group is off, the first MOSFET in the high-voltage side MOSFET group is on, and when the second MOSFET in the low-voltage side MOSFET group is on, the first MOSFET in the high-voltage side MOSFET group is off. As yet another example, the first MOSFET in the high-voltage side MOSFET group and the second MOSFET in the low-voltage side MOSFET group are switched on and off at a high frequency.

[0072] In step 708, at least one boost capacitor is intermittently clamped. For example, at least one boost capacitor is associated with multiple MOSFETs. As another example, intermittent clamping keeps at least one boost capacitor above a threshold (e.g., a lower threshold). As yet another example, at least one boost capacitor is intermittently clamped based on the on / off state of the first MOSFET in the group of low-side MOSFETs and the on / off state of the first MOSFET in the group of high-side MOSFETs and the second MOSFET in the group of low-side MOSFETs. As yet another example, at least one boost capacitor associated with multiple MOSFETs is intermittently declamped based on the distribution of power load or power supply.

[0073] In one or more embodiments, one or more gate drivers are configured to turn on a first MOSFET in the group of low-side MOSFETs. For example, one or more gate drivers turn on the first MOSFET in the group of low-side MOSFETs based on a positive cycle of power load or power supply. In another one or more embodiments, one or more gate drivers are also configured to switch the first MOSFET in the group of high-side MOSFETs and the second MOSFET in the group of low-side MOSFETs on and off. For example, one or more gate drivers switch the first MOSFET in the group of high-side MOSFETs and the second MOSFET in the group of low-side MOSFETs on and off based on a positive cycle.

[0074] In one embodiment, the fault is determined based on the failure of a battery module associated with multiple MOSFETs and at least one boost capacitor. For example, the fault may be one or more of the following: battery module failure, high-voltage side short-circuit fault, low-voltage side short-circuit fault, high-voltage side open-circuit fault, low-voltage side open-circuit fault, unknown fault, or a combination thereof.

[0075] In another embodiment, the distribution of output current is balanced based on the parallel connection and adaptive virtual resistance between one or more DC-DC converters of the electric vehicle. Simultaneously, the distribution of output voltage is balanced based on the series connection and virtual admittance between one or more DC-DC converters of the electric vehicle. It should be understood that the series connection and virtual admittance between one or more DC-DC converters of the electric vehicle ensure that the output voltage distribution is balanced simultaneously.

[0076] In another embodiment, one or more signals are sent to a controller area network (CLAN) transceiver. For example, the CLAN transceiver is configured to communicate with a microcontroller. As another example, the microcontroller is connected to a main ground line shared with multiple MOSFETs or an inverter-side ground line associated with multiple MOSFETs.

[0077] In yet another embodiment, during a positive power cycle, the switching on and off of the first MOSFET in the high-voltage side MOSFET group and the second MOSFET in the low-voltage side MOSFET group are performed at a higher frequency than the switching frequency of the first MOSFET in the low-voltage side MOSFET group and the second MOSFET in the high-voltage side MOSFET group.

[0078] Figure 8 This is a flowchart illustrating an example method 800 for controlling an electrical load or power supply. For example, example method 800 is a method for controlling an electrical load or power supply associated with an electric vehicle. In step 802, the electrical load or power supply is received via a plurality of metal-oxide-semiconductor field-effect transistors (MOSFETs). For example, the plurality of MOSFETs consists of a set of high-side MOSFETs and a set of low-side MOSFETs. As another example, multiple electrically connected powertrain modules are configured as a SIM, wherein the SIM consists of a plurality of MOSFETs.

[0079] In step 804, the second MOSFET in the group of low-side MOSFETs is turned on. For example, the second MOSFET in the group of low-side MOSFETs is turned on based on the negative cycle of the power load or power supply. As another example, the second MOSFET in the group of low-side MOSFETs remains on at low frequencies and / or remains on during the negative cycle, while the first MOSFET in the group of high-side MOSFETs remains off.

[0080] In step 806, the second MOSFET in the high-voltage side MOSFET group and the first MOSFET in the low-voltage side MOSFET group are switched on and off alternately. For example, based on a negative cycle, the second MOSFET in the high-voltage side MOSFET group and the first MOSFET in the low-voltage side MOSFET group are switched on and off alternately. As another example, when the first MOSFET in the low-voltage side MOSFET group is off, the second MOSFET in the high-voltage side MOSFET group is on, and when the first MOSFET in the low-voltage side MOSFET group is on, the second MOSFET in the high-voltage side MOSFET group is off. As yet another example, during the negative cycle, the switching on and off of the second MOSFET in the high-voltage side MOSFET group and the first MOSFET in the low-voltage side MOSFET group is at a higher frequency than the switching frequency of the second MOSFET in the low-voltage side MOSFET group and the first MOSFET in the high-voltage side MOSFET group.

[0081] In step 808, at least one boost capacitor is intermittently clamped. For example, at least one boost capacitor is associated with multiple MOSFETs. As another example, intermittent clamping keeps at least one boost capacitor above a threshold (e.g., a lower threshold). As yet another example, at least one boost capacitor is intermittently clamped based on the switching on and off of a second MOSFET in the group of low-side MOSFETs and the switching on and off of a second MOSFET in the group of high-side MOSFETs and a first MOSFET in the group of low-side MOSFETs. As yet another example, at least one boost capacitor associated with multiple MOSFETs is intermittently declamped based on the distribution of power load or power supply.

[0082] In one or more embodiments, one or more gate drivers are configured to turn on a second MOSFET in the group of low-side MOSFETs. For example, one or more gate drivers turn on the second MOSFET in the group of low-side MOSFETs based on a negative cycle of the power load or power supply. In another one or more embodiments, one or more gate drivers are also configured to switch the second MOSFET in the group of high-side MOSFETs and the first MOSFET in the group of low-side MOSFETs on and off. For example, one or more gate drivers switch the second MOSFET in the group of high-side MOSFETs and the first MOSFET in the group of low-side MOSFETs on and off based on a negative cycle of the power load or power supply.

[0083] In one embodiment, the fault is determined based on the failure of the battery module associated with multiple MOSFETs and at least one boost capacitor. For example, the fault can be one or more of the following: battery module failure, high-voltage side short-circuit fault, low-voltage side short-circuit fault, high-voltage side open-circuit fault, low-voltage side open-circuit fault, unknown fault, or a combination thereof.

[0084] In yet another embodiment, one or more protection measures may be implemented to protect the battery module and / or the SIM. For example, based on a fault, either the high-side MOSFET or the low-side MOSFET may be turned on. As another example, an additional switch connected between the two MOSFET branches associated with the high-side MOSFET or the low-side MOSFET may be turned on. As yet another example, during a fault, a series of MOSFETs associated with the high-side MOSFET or the low-side MOSFET connected between the battery module and the SIM may be disconnected.

[0085] In another embodiment, the distribution of output current is balanced based on the parallel connection and adaptive virtual resistance between one or more DC-DC converters of the electric vehicle. The distribution of output voltage is simultaneously balanced based on the series connection and virtual admittance between one or more DC-DC converters of the electric vehicle.

[0086] In an additional embodiment, one or more signals are sent to a controller area network (CLAN) transceiver. For example, the CLAN transceiver is configured to communicate with a microcontroller. As another example, the microcontroller is connected to a main ground line shared with multiple MOSFETs or an inverter-side ground line associated with multiple MOSFETs.

[0087] Unless otherwise expressly stated herein, all numerical values ​​representing mechanical / thermal properties, percentages of composition, dimensions and / or tolerances or other characteristics should be understood as “approximately” or “roughly” in describing the scope of this disclosure. Such modifications are desirable for various reasons, including industrial practice, materials, manufacturing and assembly tolerances, and testing capabilities.

[0088] As used herein, the phrases A, B, and C at least one should be interpreted as using the logic of non-exclusive OR (A or B or C) and should not be interpreted as "at least one of A, at least one of B, and at least one of C".

[0089] In this application, the terms "controller" and / or "module" may refer to, constitute, or include: application-specific integrated circuits (ASICs); digital, analog, or mixed-signal analog / digital discrete circuits; digital, analog, or mixed-signal analog / digital integrated circuits; combinational logic circuits; field-programmable gate arrays (FPGAs); processor circuitry (shared, dedicated, or grouped) that executes code; memory circuitry (shared, dedicated, or grouped) that stores code executed by the processor circuitry; other suitable hardware components that provide the said functionality (e.g., an operational amplifier circuit integrator as part of a thermal flux data module); or combinations of some or all of the above as in a system-on-a-chip.

[0090] The term memory is a subset of the term computer-readable medium. As used herein, the term computer-readable medium does not contain transient electrical or electromagnetic signals propagating through a medium (e.g., on a carrier wave); therefore, the term computer-readable medium can be considered tangible and non-transient. Non-limiting examples of non-transient tangible computer-readable media are non-volatile memory circuits (e.g., flash memory circuits, erasable programmable read-only memory circuits, or mask read-only circuits), volatile memory circuits (e.g., static random access memory circuits or dynamic random access memory circuits), magnetic storage media (e.g., analog or digital magnetic tape or hard disk drives), and optical storage media (e.g., CDs, DVDs, or Blu-ray discs).

[0091] The apparatus and methods described in this application can be implemented, partially or entirely, by a special-purpose computer created by configuring a general-purpose computer to perform one or more specific functions embodied in a computer program. The aforementioned function blocks, flowchart components, and other elements serve as software specifications that can be translated into a computer program through the routine work of a skilled technician or programmer.

[0092] The descriptions in this disclosure are exemplary in nature only, and therefore any changes that do not depart from the substance of this disclosure are considered to be within the scope of this disclosure. Such changes should not be regarded as a departure from the spirit and scope of this disclosure.

Claims

1. A method comprising: Based on the positive cycle of the power load, the first MOSFET in a set of low-side MOSFETs associated with one or more SIMs is turned on, where SIM refers to a smart integrated module and MOSFET refers to a metal-oxide-semiconductor field-effect transistor. Based on the positive cycle of the power load, the first MOSFET in a group of high-voltage side MOSFETs associated with the one or more SIMs and the second MOSFET in the group of low-voltage side MOSFETs are switched on and off; and At least one boost capacitor associated with each of the high-voltage side MOSFET and the low-voltage side MOSFET is intermittently clamped to keep the at least one boost capacitor above a voltage threshold, wherein the intermittent clamping is based on the first MOSFET in the group of low-voltage side MOSFETs being turned on and the first MOSFET in the group of high-voltage side MOSFETs and the second MOSFET in the group of low-voltage side MOSFETs being switched on and off.

2. The method according to claim 1, wherein, When the second MOSFET in the low-voltage side MOSFET group is turned off, the first MOSFET in the high-voltage side MOSFET group is turned on, and when the second MOSFET in the low-voltage side MOSFET group is turned on, the first MOSFET in the high-voltage side MOSFET group is turned off.

3. The method according to claim 1, wherein, During the positive cycle of the electric drive system associated with multiple powertrain modules, a first MOSFET in the group of low-voltage side MOSFETs remains on, and a second MOSFET in the group of high-voltage side MOSFETs remains off, wherein the multiple powertrain modules are configured as SIM.

4. The method according to claim 1, further comprising: Based on the distribution of the electrical load, the at least one boost capacitor is intermittently declamped.

5. The method according to claim 1, wherein, During the positive power cycle, the switching on and off of the first MOSFET in the group of low-voltage side MOSFETs and the second MOSFET in the group of high-voltage side MOSFETs is at a higher frequency than the switching frequency of the first MOSFET in the group of low-voltage side MOSFETs and the second MOSFET in the group of high-voltage side MOSFETs.

6. The method of claim 1, further comprising: Based on the negative cycle of the power load, the second MOSFET in the group of low-voltage side MOSFETs is turned on; Based on the negative cycle of the power load, the second MOSFET in the group of high-voltage side MOSFETs and the first MOSFET in the group of low-voltage side MOSFETs are switched on and off. as well as The at least one boost capacitor is intermittently clamped to keep the at least one boost capacitor above the voltage threshold, wherein the intermittent clamping is based on the switching on and off of the second MOSFET in the group of low-voltage side MOSFETs and the switching on and off of the second MOSFET in the group of high-voltage side MOSFETs and the first MOSFET in the group of low-voltage side MOSFETs.

7. The method according to claim 6, wherein, When the first MOSFET in the low-voltage side MOSFET group is turned off, the second MOSFET in the high-voltage side MOSFET group is turned on, and when the first MOSFET in the low-voltage side MOSFET group is turned on, the second MOSFET in the high-voltage side MOSFET group is turned off.

8. The method according to claim 6, wherein, During the negative cycle, the second MOSFET in the low-side MOSFET group remains on, while the first MOSFET in the high-side MOSFET group remains off.

9. The method of claim 6, further comprising: Based on the power supply distribution, the at least one boost capacitor is intermittently declamped.

10. The method according to claim 6, wherein, During the negative power cycle, the switching on and off of the second MOSFET in the group of low-voltage side MOSFETs and the first MOSFET in the group of high-voltage side MOSFETs is at a higher frequency than the switching frequency of the second MOSFET in the group of low-voltage side MOSFETs and the first MOSFET in the group of high-voltage side MOSFETs.

11. The method of claim 1, further comprising: Errors are determined based on faults in the battery module associated with each of the high-voltage side MOSFET and the low-voltage side MOSFET, wherein the error is one or more of the following: battery module error, high-voltage side short circuit error, low-voltage side short circuit error, high-voltage side open circuit error, low-voltage side open circuit error, or a combination thereof.

12. The method of claim 1, further comprising: Based on the parallel connection between one or more DC-to-DC converters using adaptive virtual resistance and SIM, the output current distribution associated with the battery charging system is balanced, wherein the battery charging system includes multiple powertrain modules configured as SIM; and Based on virtual admittance and the series connection between one or more DC-to-DC converters of the SIM, while balancing the output voltage distribution associated with the SIM.

13. The method of claim 12, further comprising: Send one or more signals to an isolated controller area network (SIM) transceiver, wherein the isolated SIM transceiver is configured to communicate with a microcontroller, wherein the microcontroller is associated with each of the SIMs, and wherein the SIM microcontroller is connected to a main ground line shared with each of the high-side MOSFETs and the low-side MOSFETs, or connected to an inverter-side ground line associated with each of the high-side MOSFETs and the low-side MOSFETs, while another ground line of the isolated SIM is connected to the output ground line of the SIM's DC-DC converter and to the common ground line of the string digital controller or motor digital controller.

14. A system comprising: Multiple electrically connected powertrain modules, the modules being configured as SIMs, wherein SIM refers to a smart integration module, and each SIM further includes: Multiple MOSFETs, wherein MOSFET refers to a metal-oxide-semiconductor field-effect transistor, are configured as follows: The device receives a power load, wherein the plurality of MOSFETs consists of a set of high-voltage-side MOSFETs and a set of low-voltage-side MOSFETs. Based on the positive cycle of the power load, the first MOSFET in the group of low-voltage side MOSFETs is turned on; and Based on the positive cycle of the power load, the first MOSFET in the group of high-voltage side MOSFETs and the second MOSFET in the group of low-voltage side MOSFETs are switched on and off. At least one boost capacitor is configured as follows: At least one boost capacitor associated with the plurality of MOSFETs is intermittently clamped to keep the at least one boost capacitor above a voltage threshold, wherein the intermittent clamping is based on the first MOSFET in the group of low-side MOSFETs being turned on and the first MOSFET in the group of high-side MOSFETs and the second MOSFET in the group of low-side MOSFETs being switched on and off. One or more gate drivers are configured to: The first MOSFET in the group of low-voltage side MOSFETs is turned on based on the positive cycle of the power load; and The first MOSFET in the high-voltage side MOSFET group and the second MOSFET in the low-voltage side MOSFET group are switched on and off based on the positive cycle.

15. The system according to claim 14, wherein, When the second MOSFET in the low-voltage side MOSFET group is turned off, the first MOSFET in the high-voltage side MOSFET group is turned on, and when the second MOSFET in the low-voltage side MOSFET group is turned on, the first MOSFET in the high-voltage side MOSFET group is turned off.

16. The system according to claim 14, wherein, During the positive cycle of the electric drive system associated with the SIM, the first MOSFET in the group of low-side MOSFETs remains on, while the second MOSFET in the group of high-side MOSFETs remains off.

17. The system according to claim 14, wherein, The at least one boost capacitor is further configured to: Based on the distribution of the electrical load, the at least one boost capacitor is intermittently declamped.

18. The system according to claim 14, wherein, During the positive power cycle, the switching on and off of the first MOSFET in the group of low-voltage side MOSFETs and the second MOSFET in the group of high-voltage side MOSFETs is at a higher frequency than the switching frequency of the first MOSFET in the group of low-voltage side MOSFETs and the second MOSFET in the group of high-voltage side MOSFETs.

19. A system comprising: Multiple electrically connected powertrain modules, the modules being configured as SIMs, wherein SIM refers to a smart integration module, and each SIM further includes: Multiple MOSFETs, wherein MOSFET refers to a metal-oxide-semiconductor field-effect transistor, are configured as follows: Receives a power load, wherein the plurality of MOSFETs consists of a set of high-voltage side MOSFETs and a set of low-voltage side MOSFETs; Based on the negative cycle of the power load, the second MOSFET in the group of low-voltage side MOSFETs is turned on; Based on the negative cycle of the power load, the second MOSFET in the group of high-voltage side MOSFETs and the first MOSFET in the group of low-voltage side MOSFETs are switched on and off alternately; and At least one boost capacitor is intermittently clamped to maintain the at least one boost capacitor above a voltage threshold, wherein the intermittent clamping is based on the second MOSFET in the group of low-side MOSFETs being turned on, and the second MOSFET in the group of high-side MOSFETs and the first MOSFET in the group of low-side MOSFETs being switched on and off; and One or more gate drivers are configured to: The second MOSFET in the low-voltage side MOSFET group is turned on based on the negative cycle of the power load, and The second MOSFET in the high-voltage side MOSFET group and the first MOSFET in the low-voltage side MOSFET group are switched on and off based on the negative cycle.

20. The system according to claim 19, wherein, When the first MOSFET in the low-voltage side MOSFET group is turned off, the second MOSFET in the high-voltage side MOSFET group is turned on, and when the first MOSFET in the low-voltage side MOSFET group is turned on, the second MOSFET in the high-voltage side MOSFET group is turned off.

21. The system according to claim 19, wherein, During the negative cycle of the electric drive system associated with the SIM, the second MOSFET in the group of low-side MOSFETs remains on, while the first MOSFET in the group of high-side MOSFETs remains off.

22. The system according to claim 19, wherein, The at least one boost capacitor is further configured to: Based on the distribution of the electrical load, at least one boost capacitor associated with the plurality of MOSFETs is intermittently declamped.

23. The system according to claim 19, wherein, During the negative power cycle, the switching on and off of the second MOSFET in the group of low-voltage side MOSFETs and the first MOSFET in the group of high-voltage side MOSFETs is at a higher frequency than the switching frequency of the second MOSFET in the group of low-voltage side MOSFETs and the first MOSFET in the group of high-voltage side MOSFETs.

24. The system according to claim 19, wherein, Each of the plurality of electrically connected powertrain modules is electrically connected to one or more battery modules, the battery modules being configured to: The fault is determined based on the failure of the battery module associated with the plurality of MOSFETs and the at least one boost capacitor, wherein the fault is one or more of the following: battery module failure, high-voltage side short circuit failure, low-voltage side short circuit failure, high-voltage side open circuit failure, low-voltage side open circuit failure, high-voltage side and low-voltage side short circuit failure, or a combination thereof.

25. The system according to claim 24, wherein, The battery module and the SIM are configured to prevent malfunctions as follows: Based on the aforementioned fault, either the high-voltage side MOSFET or the low-voltage side MOSFET is switched on. Turn on an additional switch connected between two MOSFET branches associated with the high-voltage side MOSFET or the low-voltage side MOSFET; or During the fault, a series of MOSFETs associated with the high-voltage side MOSFET or the low-voltage side MOSFET connected between the battery module and the SIM are disconnected.

26. The system according to claim 19, wherein, Each of the plurality of electrically connected powertrain modules further includes: Control structure, the control structure being configured as follows: Based on the parallel connection of adaptive virtual resistors between one or more DC-to-DC converters in the electric drive system, the output current distribution associated with the electric drive system associated with the SIM is balanced; and Based on the series connection and virtual admittance between one or more DC-to-DC converters of the electric drive system, the output voltage distribution associated with the electric drive system is simultaneously balanced.

27. The system according to claim 19, wherein, Each of the plurality of electrically connected powertrain modules further includes: A DC-to-DC converter, wherein the DC-to-DC converter is configured to: The output ground of the DC-DC converter is connected to the secondary ground of an isolated Controller Area Network (CLAN) transceiver, wherein the isolated CLAN transceiver is configured to communicate with a microcontroller, and wherein the microcontroller is connected to the primary ground of the isolated CLAN transceiver shared with the plurality of MOSFETs or to the inverter-side ground associated with the plurality of MOSFETs.

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