Method for processing hole structure of ceramic substrate, controller, device and ceramic circuit board

Abstract

The application is suitable for the field of laser processing technology, and provides a hole structure processing method of a ceramic substrate, a controller, an equipment and a ceramic circuit board. The hole structure processing method of the ceramic substrate comprises: obtaining a processing parameter of a hole structure; and processing the hole structure with a hole outer contour and a target processing depth at a hole position. The hole structure processing process is multiple layered processing. The processing process of the first layer in the multiple layered processing comprises: using a first laser to perform laser around-cut processing along a processing path matched with the hole outer contour according to a first processing depth, and using a second laser to perform laser scanning processing along a surrounding area of the hole outer contour according to a second processing depth smaller than the first processing depth. After the multiple layered processing, the cumulative value of the first processing depth is greater than or equal to the target processing depth, and the cumulative value of the second processing depth is greater than or equal to the target processing depth. The embodiment of the application can effectively process the hole structure meeting the requirements on the ceramic material layer.

Description

Technical Field

[0001] This application belongs to the field of industrial technology, and in particular relates to a method, controller, equipment and ceramic circuit board for processing hole structures on ceramic substrates. Background Technology

[0002] Circuit boards (PCBs) are packaging substrates used to carry and interconnect different chips and / or electronic components. A PCB consists of a core board and stacked layers on top and bottom surfaces. The copper foil layer in the stacked layers is used to create the signal transmission lines of the PCB, while the insulating layer provides insulation between the upper and lower signal transmission lines. Ceramic substrates, on the other hand, are PCBs containing ceramic material layers within their material layers. They possess excellent heat dissipation performance, high insulation, and good mechanical strength, making them a crucial foundation for supporting high-performance computing hardware, efficient heat dissipation systems, and high-end electronic devices.

[0003] However, because ceramic material layers are typically thick, the holes machined on them are usually quite large. Related technologies for machining large holes on circuit boards include mechanical drilling and laser cutting. However, mechanical drilling cannot machine ceramic materials; laser drilling typically uses a controlled laser beam to cut around the material in a concentric circle or helical trajectory, such as... Figure 1 As shown, this method removes the substrate along the machining path by increasing energy accumulation. However, ceramic material layers are thick and have a high energy damage threshold. Furthermore, laser drilling creates a significant taper morphology on the sidewalls of the hole structure as the drilling depth increases. This method can lead to damage to the bottom material layer of the hole structure (including the bottom and sides of the hole) due to accumulated machining energy, and also results in a large taper on the blind hole sidewalls. Therefore, existing technologies struggle to effectively machine the required hole structure onto ceramic material layers. Summary of the Invention

[0004] This application provides a method, controller, device, and ceramic circuit board for processing hole structures on ceramic substrates, which can effectively process hole structures that meet the requirements on ceramic material layers.

[0005] The first aspect of the embodiment of the application provides a hole structure processing method of a ceramic substrate. The hole structure processing method is applied to processing a hole structure on a ceramic material layer of a ceramic substrate. The hole structure processing method comprises the following steps: obtaining processing parameters of the hole structure, wherein the processing parameters comprise a hole position, a target processing depth and a hole outer contour; and processing the hole structure with the hole outer contour and the target processing depth at the hole position. The hole structure processing process is a plurality of layer-by-layer processing processes, each processing process corresponds to one layer, the plurality of layer-by-layer processing processes comprise a first layer, and the processing process of the first layer comprises the following steps: performing laser circumferential cutting processing on a processing path matched with the hole outer contour according to a first processing depth by using a first laser; and performing laser scanning processing on a surrounding area of the hole outer contour according to a second processing depth by using a second laser, wherein the first processing depth is greater than the second processing depth. After the plurality of layer-by-layer processing processes, the cumulative value of the first processing depth is greater than or equal to the target processing depth, and the cumulative value of the second processing depth is greater than or equal to the target processing depth.

[0006] In some embodiments of the first aspect, the first laser and the second laser are emitted by the same laser, the laser is an ultrashort pulse laser, the spot energy and the peak value of the first laser are greater than the spot energy and the peak value of the second laser, and the spot size of the first laser is smaller than the spot size of the second laser.

[0007] In some embodiments of the first aspect, the spot diameter of the first laser is greater than or equal to 10 microns and smaller than or equal to 40 microns, and the spot diameter of the second laser is greater than or equal to 40 microns and smaller than or equal to 60 microns.

[0008] In some embodiments of the first aspect, the layer-by-layer processing further comprises a second layer other than the first layer, and the processing process of the second layer comprises the following steps: performing laser scanning processing on the surrounding area of the hole outer contour according to a third processing depth by using the second laser, wherein the third processing depth is smaller than or equal to the difference between the cumulative value of the current first processing depth and the cumulative value of the second processing depth.

[0009] In some embodiments of the first aspect, before the hole structure with the hole outer contour and the target processing depth is processed at the hole position, the method further comprises the following steps: planning the number of layers of the plurality of layer-by-layer processing based on the processing parameters and laser processing parameters to obtain a total number of layers N, wherein N is greater than 1; and taking the Nth layer as the second layer.

[0010] In some embodiments of the first aspect, the ceramic material layer is a core plate and / or an insulating layer of the ceramic substrate.

[0011] In some embodiments of the first aspect, the ceramic material layer is a core layer of the ceramic substrate, and the hole structure having the hole outer profile and the target machining depth is machined at the hole position, comprising: if the thickness of the ceramic material layer is greater than a thickness threshold, performing double-sided laser machining on the ceramic material layer at the hole position to obtain the hole structure having the hole outer profile and the target machining depth, each of the laser machining comprises at least one layer-by-layer machining.

[0012] In some embodiments of the first aspect, the ceramic substrate comprises a plurality of ceramic material layers stacked continuously, and the hole structure having the hole outer profile and the target machining depth is machined at the hole position, comprising: if there is a spacer layer between different ceramic material layers, performing laser machining on the spacer layer and the ceramic material layer at the hole position based on different laser machining parameters respectively to obtain the hole structure having the hole outer profile and the target machining depth, wherein the laser machining process of the ceramic material layer is a plurality of layer-by-layer machining.

[0013] In some embodiments of the first aspect, the hole diameter of the hole structure is 100 μm to 400 μm; the first machining depth is 30 μm to 50 μm, the second machining depth is greater than the first machining depth, and the depth difference between the second machining depth and the first machining depth is 20 μm to 60 μm.

[0014] In some embodiments of the first aspect, after the hole structure having the hole outer profile and the target machining depth is machined at the hole position, further comprising: performing at least one post-processing of cleaning, hole metallization or filling conductive material on the hole structure to form a conductive path in the hole structure.

[0015] The second aspect of the embodiments of the present application provides a controller, comprising a memory, a processor, and a computer program stored in the memory and executable on the processor; the processor implements the steps of the hole structure machining method of the ceramic substrate when executing the computer program.

[0016] The third aspect of the embodiments of the present application provides a computer readable storage medium, which stores a computer program, and the computer program is executed by a processor to implement the steps of the hole structure machining method of the ceramic substrate.

[0017] The fourth aspect of the embodiments of the present application provides a computer program product, when the computer program is executed, the hole structure machining method of the ceramic substrate is executed.

[0018] In a fifth aspect, the embodiment of the present application provides a laser processing device, comprising: a processing platform configured to carry a ceramic substrate, the ceramic substrate being formed by laminating a ceramic material layer and a non-ceramic material layer; a laser configured to emit a laser beam; an optical processing head configured to guide and focus the laser beam generated by the laser to a hole position on the ceramic substrate; and a controller configured to control the laser, the optical processing head and the processing platform to work cooperatively to implement the hole structure processing method of the ceramic substrate according to any one of the first aspect.

[0019] In some embodiments of the fifth aspect, the laser is an ultra-short pulse laser, and the first laser and the second laser are emitted by the same laser.

[0020] In a sixth aspect, the embodiment of the present application provides a ceramic circuit board, comprising a ceramic substrate formed by laminating a ceramic material layer and a non-ceramic material layer; and a hole structure located in the ceramic material layer, the hole structure being obtained by processing the ceramic substrate according to the method of any one of the first aspect or the laser processing device of any one of the fifth aspect.

[0021] In the embodiments of the present application, since the sidewall taper of the laser processing is proportional to the processing depth, by obtaining the hole position of the hole structure, the target processing depth and the hole outer contour, the hole structure with the hole outer contour and the target processing depth is processed at the hole position, wherein the hole structure processing process is a plurality of layer-by-layer processing, each processing corresponds to a layer, the layers of the plurality of layer-by-layer processing include a first layer, and the processing process of the first layer includes: using a first laser to perform laser around-cut processing along a processing path matched with the hole outer contour according to a first processing depth, and using a second laser to perform laser scanning processing along a surrounding area of the hole outer contour according to a second processing depth, so that the cumulative value of the first processing depth is greater than or equal to the target processing depth, and the cumulative value of the second processing depth is greater than or equal to the target processing depth, the one-time processing to the target processing depth can be divided into a plurality of layer-by-layer processing, the sidewall taper formed during each processing is improved, and in the first layer, the first processing depth is greater than the second processing depth, so that the hole outer contour can provide a lateral chip removal and heat dissipation channel for the removal of the surrounding area material, which helps to reduce heat accumulation and improve the taper, and at the same time, the surrounding area can be processed by a larger size spot, which can improve the processing efficiency and help to process the hole structure meeting the requirements on the ceramic material layer. BRIEF DESCRIPTION OF DRAWINGS

[0022] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed in the embodiments or prior art description will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative labor based on these drawings.

[0023] Figure 1 is a schematic diagram of a hole structure processing method in the related art;

[0024] Figure 2 is a schematic diagram of a hole structure processing method of a ceramic substrate provided by an embodiment of the present application;

[0025] Figure 3 is a schematic diagram of a hole structure provided by an embodiment of the present application;

[0026] Figure 4 is a schematic diagram of multiple-layered laser processing provided by an embodiment of the present application;

[0027] Figure 5 is a schematic diagram of a laser scanning path provided by an embodiment of the present application;

[0028] Figures 6 to 8 is a schematic diagram of different ceramic substrates provided by an embodiment of the present application;

[0029] Figure 9 is a schematic diagram of a controller provided by an embodiment of the present application;

[0030] Figure 10 is a schematic diagram of a laser processing device provided by an embodiment of the present application. DETAILED DESCRIPTION

[0031] In order to make the objects, technical solutions and advantages of the present application clearer, the present application will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and should not be used to limit the present application. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without creative work fall within the scope of the present application.

[0032] It should be understood that when used in the specification and the appended claims of the present application, the term "comprising" indicates the presence of the described features, integers, steps, operations, elements, and / or components, but does not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or sets thereof.

[0033] It should also be understood that the term "and / or" used in the specification and the appended claims of the present application refers to any combination of one or more of the associated listed items and all possible combinations, and includes these combinations.

[0034] References to "one embodiment" or "some embodiments" in this specification mean that one or more embodiments of this application include a specific feature, structure, or characteristic described in connection with that embodiment. Therefore, the phrases "in one embodiment," "in some embodiments," "in other embodiments," "in still other embodiments," etc., appearing in different parts of this specification do not necessarily refer to the same embodiment, but rather mean "one or more, but not all, embodiments," unless otherwise specifically emphasized.

[0035] Existing technologies for fabricating large-size holes on circuit boards include mechanical drilling and laser cutting. However, mechanical drilling cannot process ceramic materials; while laser drilling typically involves controlling the laser beam to cut around the surface in a concentric circle or helical trajectory, such as... Figure 1 As shown, this method removes the substrate along the processing path by increasing energy accumulation on the processing trajectory. However, ceramic material layers are thick and have a high energy damage threshold. Furthermore, the sidewall taper of laser drilling is proportional to the drilling depth. This method can lead to damage to the bottom material layer of the hole structure and cause large sidewall tapers in blind holes. Therefore, existing technologies cannot effectively process the required hole structure on ceramic material layers. In view of this, this application breaks down the laser beam processing to the target processing depth into multiple layered processing steps to improve the sidewall taper formed in each processing step. Simultaneously, during the processing of the first layer, laser cutting is performed on the outer contour of the hole according to the first processing depth, and laser scanning is performed on the enclosing area of ​​the outer contour of the hole according to a second processing depth less than the first processing depth. This allows the outer contour of the hole to provide lateral venting and heat dissipation channels for the removal of material in the enclosing area, which helps to reduce heat accumulation, improve taper, and increase processing efficiency, enabling the processing of the required hole structure on ceramic material layers.

[0036] To illustrate the technical solution of this application, specific embodiments are described below.

[0037] Figure 2 This illustration shows a schematic flowchart of a method for processing hole structures on a ceramic substrate according to an embodiment of this application. This method can be used to process hole structures on a ceramic material layer of a ceramic substrate. The ceramic material layer is a layer made of ceramic material within the ceramic substrate, and can refer to the insulating layer, core plate, etc., of the ceramic substrate. The method for processing hole structures on a ceramic substrate can be applied to a controller. This controller can be installed on a laser processing equipment.

[0038] Specifically, the above-mentioned method for processing the hole structure of the ceramic substrate may include the following steps S201 to S202.

[0039] Step S201: Obtain the machining parameters of the hole structure.

[0040] The processing parameters can include a hole position, a target processing depth, and a hole outer contour, which can be determined based on the hole structure processing requirements of the ceramic substrate. The hole position refers to the position of the hole structure on the ceramic material layer. The target processing depth refers to the maximum depth required when processing the hole structure on the ceramic material layer, which corresponds to the depth of the bottom surface of the hole structure formed by processing. In embodiments of the present application, the hole structure is processed separately from the hole outer contour and the enclosed area of the hole outer contour. Please refer to Figure 3 , Figure 3 The projection view in the depth direction is shown. The hole outer contour is the area defined by the maximum boundary (outer wall) of the hole and the boundary of the enclosed area in the projection view in the depth direction, and the processing of this area can be used to form the side wall body of the hole structure. The enclosed area is the area enclosed by the hole outer contour during processing of the hole structure in the projection view perpendicular to the hole axis.

[0041] In step S202, a hole structure with a hole outer contour and a target processing depth is processed at a hole position.

[0042] In embodiments of the present application, the hole structure processing process is a plurality of layer-by-layer processing, each processing corresponding to a layer. The layers of the plurality of layer-by-layer processing include a first layer, which can be a layer corresponding to a part of the plurality of layer-by-layer processing or a layer corresponding to all of the plurality of layer-by-layer processing.

[0043] The processing process of the first layer includes: using a first laser to perform laser around-cut processing along a processing path matching the hole outer contour according to a first processing depth, and using a second laser to perform laser scanning processing along the enclosed area of the hole outer contour according to a second processing depth, the first processing depth being greater than the second processing depth.

[0044] The first processing depth is not the depth at which the first laser penetrates each layer of processing alone, but also includes the depth difference between the first processing depth and the second processing depth accumulated in the previous layer of processing. The second processing depth is the depth at which the second laser penetrates each layer of processing alone.

[0045] Specifically, according to the target machining depth, the first machining depth and the second machining depth are planned, and the layers are set according to the first machining depth and the second machining depth. For example, the thickness of the ceramic material layer as the core plate is 800 μm, or greater than or equal to 1000 μm. The thickness of the ceramic material layer close to the surface of the ceramic substrate is 500 μm. The thickness of the ceramic material layer close to the core plate is 200 μm. In some embodiments, the diameter of the hole structure is 100 μm to 400 μm, and the target machining depth can be greater than or equal to 200 μm. At this time, the first machining depth can be set to 30 μm to 50 μm, so that the first machining depth is adapted to the thickness of the ceramic material layer and the target machining depth, and the improvement ability of the taper and the heat accumulation and the machining efficiency of the drilling are balanced. The second machining depth can be greater than the first machining depth, and the depth difference between the second machining depth and the first machining depth is 20 μm to 60 μm, which can form a clear opening structure at the position of the second machining depth with the first machining depth, so as to achieve the purpose of effectively removing the drillings during the second laser machining, and avoid that the first laser machining process occupies too much time to reduce the efficiency.

[0046] As shown in Figure 4 In each first layer, the first laser can be used to perform laser circumferential machining along a machining path matching the outer contour of the hole according to the first machining depth, to form a side wall opening with a depth reaching the first machining depth. Then, the enclosed area of the outer contour of the hole is removed by laser scanning, and the bottom surface of the center area after removal reaches a second machining depth less than the first machining depth.

[0047] In this way, since the side wall taper of the laser machining is proportional to the machining depth, the one-time machining to the target machining depth is divided into multiple layered machining, which can reduce the side wall taper formed during each machining. The side wall opening formed by the hole contour is helpful for timely removal of the drillings and heat dissipation of the substrate in the removal process.

[0048] Meanwhile, in order to improve the convenience, the first laser and the second laser can be emitted by the same laser, and by adjusting the laser emission power and / or adjusting the control parameters of the optical devices on the laser beam transmission optical path, the laser beams emitted by the same laser can act on the hole position as the first laser or the second laser with different laser machining parameters in different time periods. Since the penetration depth of the laser is positively correlated with the spot energy peak value, the spot energy density and the accumulated applied laser energy of the laser beam, and the opening size of the side wall structure is inversely proportional to the depth position, in order to make the first machining depth have a clear opening at the position of the second machining depth, the spot energy peak value of the first laser can be greater than the spot energy peak value of the second laser. It can be understood that from the perspective of improving the machining efficiency, the spot energy density of the first laser can also be further set to be greater than the spot energy density of the second laser.

[0049] Further, the hole outer contour processing requires a higher spot energy peak due to the need to penetrate a deeper depth and the lack of openings for chip removal during the processing, and for the same focused beam, the spot size is inversely proportional to the spot energy peak, so the spot size of the first laser can be smaller than the spot size of the second laser. After the hole outer contour processing is completed, the spot size can be expanded to scan the substrate in the central area with a larger spot, which can improve the processing efficiency. For example, the spot diameter of the first laser is greater than or equal to 10 microns and less than or equal to 40 microns, and the spot diameter of the second laser is greater than or equal to 40 microns and less than or equal to 60 microns.

[0050] With multiple layer-by-layer processing, the cumulative value of the first processing depth is greater than or equal to the target processing depth, and the cumulative value of the second processing depth is greater than or equal to the target processing depth. At this time, the bottom depth of the hole outer contour and the enclosed area thereof reaches the target processing depth, and a hole structure with a hole outer contour and a target processing depth can be formed on the ceramic material layer. Specifically, when the processed ceramic material layer is exactly the termination layer of the hole structure on the ceramic substrate, the cumulative value of the first processing depth is equal to the target processing depth, and the cumulative value of the second processing depth is equal to the target processing depth. When the termination layer of the hole structure is located below the ceramic material layer, i.e., it is necessary to penetrate the ceramic material layer and further process the material layer located below the ceramic material layer, the cumulative value of the first processing depth can be greater than the target processing depth, and the cumulative value of the second processing depth is greater than the target processing depth.

[0051] In the embodiments of the present application, since the laser processing sidewall taper is proportional to the processing depth, by obtaining the hole position of the hole structure, the target processing depth, and the hole outer contour, a hole structure with a hole outer contour and a target processing depth is processed at the hole position, wherein the hole structure processing process is multiple layer-by-layer processing, each processing corresponds to a layer, and the multiple layer-by-layer processing includes a first layer, and the processing process of the first layer includes: using a first laser to perform laser around-cut processing along a processing path matched with the hole outer contour according to a first processing depth, and using a second laser to perform laser scanning processing along the enclosed area of the hole outer contour according to a second processing depth, so that the cumulative value of the first processing depth is greater than or equal to the target processing depth, and the cumulative value of the second processing depth is greater than or equal to the target processing depth, which can split the one-time processing to the target processing depth into multiple layer-by-layer processing, improve the sidewall taper formed during each processing, and in the first layer, the first processing depth is greater than the second processing depth, so that the hole outer contour can provide a lateral chip removal and heat dissipation channel for the removal of the material in the enclosed area, which helps to reduce heat accumulation and improve the taper, and at the same time, the enclosed area can be processed with a larger spot, which can improve the processing efficiency and help to process the required hole structure on the ceramic material layer.

[0052] It should be noted that the above processing method can be applied to processing a hole structure of a via or a blind via on a ceramic substrate, and the present application does not limit this. For a via, the processing method of the present application can improve the taper of the side wall of the hole structure; for a blind via, the processing method of the present application can further avoid thermal damage to the material layer of the bottom wall of the hole structure by reducing heat accumulation on the basis of improving the taper of the side wall of the hole structure.

[0053] In addition, in the ceramic substrate, the above hole structure can be a single-layer ceramic hole structure which is completely formed in a single ceramic material layer; or a cross-layer heterogeneous hole which has a processing depth across a plurality of stacked interfaces, and the bottom surface of the hole structure can be inside the ceramic material layer of the bottom layer, or can be through the ceramic material layer of the bottom layer and located on the non-ceramic material layer below.

[0054] In some embodiments of the present application, when the processed ceramic material layer is exactly the termination layer of the hole structure on the ceramic substrate, please refer to Figure 4 The above multiple layered processing can further include a second layering in addition to the first layering. The processing of the second layering can include: using a second laser to perform laser scanning processing along the enclosed area of the hole outer contour according to a third processing depth.

[0055] Specifically, the first layering can be processed preferentially. Since the first processing depth of the hole outer contour is always greater than the second processing depth in the processing of the first layering, there is a difference between the accumulated value of the first processing depth and the accumulated value of the second processing depth, which can represent the height of the enclosed area after processing that is higher than the bottom of the hole outer contour. In order to remove the enclosed area after processing that is higher than the bottom of the hole outer contour, the second layering can be processed according to a third processing depth. The third processing depth is less than or equal to the difference between the accumulated value of the first processing depth and the accumulated value of the second processing depth, so that through one or more second layerings, the accumulated value of the first processing depth and the accumulated value of the second processing depth can be equal to the target processing depth, thereby forming a hole structure with the hole outer contour and the target processing depth.

[0056] In some embodiments of the present application, before processing the hole structure with the hole outer contour and the target processing depth at the hole position, the method can further include: based on the processing parameters and the laser processing parameters, planning the number of layers of the multiple layered processing to obtain a total number of layers N, N is greater than 1; and taking the Nth layer as the second layering.

[0057] Specifically, the target processing depth in the processing parameters determines the total processing range in the depth direction, and the laser processing parameters determine the processing capacity of a single processing. Based on the processing parameters and the laser processing parameters, the number of layers of the multiple layered processing can be planned to obtain a total number of layers N of the multiple layered processing. At this time, the first N-1 layers can be taken as the first layering, and the Nth layer can be taken as the second layering, that is, please refer toFigure 4 In the first N-1 layers, the first laser is used to perform laser trepanning machining along a machining path matching the outer contour of the hole at a first machining depth, and the second laser is used to perform laser scanning machining along the enclosed area of the outer contour of the hole at a second machining depth. In the last time, the second laser is used to remove the remaining enclosed area by performing laser scanning machining along the enclosed area of the outer contour of the hole at a third machining depth, thereby forming a hole structure with the outer contour of the hole and the target machining depth.

[0058] In some embodiments of the present application, the number of layers planning of the multiple times of layered machining based on the machining parameters and the laser machining parameters can include: determining a single-layer machining depth based on the laser machining parameters, and determining the total number of layers N of the multiple times of layered laser machining according to the target machining depth and the single-layer machining depth.

[0059] The single-layer machining depth is the maximum depth that each layer can reach, which can be determined by the laser machining parameters and the taper requirement. Specifically, the smaller the allowed hole wall taper is, the shallower the maximum depth allowed for each layer to machine. For each layer, a unified single-layer machining depth can be used to reduce the impact of reconfiguring the laser parameters on the machining efficiency. Alternatively, a corresponding single-layer machining depth can be used for each layer, and the single-layer machining depths corresponding to different layers can be the same or different, so that the machining depth of each layer can be variable, thereby improving the machining flexibility. According to the target machining depth and the single-layer machining depth, the total number of layers N of the multiple times of layered laser machining can be determined, so that the cumulative value of the first machining depth of all layers is greater than or equal to the target machining depth, and the cumulative value of the second machining depth of all layers is greater than or equal to the target machining depth.

[0060] In some embodiments of the present application, the laser trepanning machining along the machining path matching the outer contour of the hole at the first machining depth using the first laser can include: obtaining a trepanning path, and scanning the ceramic material layer along the trepanning path at the first machining depth to form the outer contour of the hole on the ceramic material layer.

[0061] Specifically, taking a circular hole structure as an example, taking the center of the hole structure as the center, the trepanning path can be generated based on the outer diameter and the inner diameter of the outer contour of the hole, so that the trepanning path can remove the material within the outer contour of the hole in the horizontal plane and remove the material of the first machining depth in the depth direction to form a side wall opening.

[0062] Correspondingly, the laser scanning machining along the enclosed area of the outer contour of the hole at the second machining depth using the second laser can include: obtaining a laser scanning path, and scanning the enclosed area of the outer contour of the hole along the laser scanning path at the second machining depth.

[0063] Wherein, please refer to Figure 5The laser scanning path is a parallel line scanning path or a grid line scanning path, which can guarantee the coverage in the horizontal plane and the material removal degree of the enclosed area.

[0064] In some embodiments of the present application, when the ceramic material layer is a core board of the ceramic substrate, the hole structure can be a through hole. When the ceramic material layer is an insulating layer of the ceramic substrate, the hole structure can be a blind hole.

[0065] Specifically, for the case where the ceramic material layer is a core board of the ceramic substrate, processing the hole structure having the hole outer contour and the target machining depth at the hole position can include: if the thickness of the ceramic material layer is greater than a thickness threshold, performing double-sided laser processing on the ceramic material layer at the hole position to obtain the hole structure having the hole outer contour and the target machining depth, each side laser processing including at least one layering processing.

[0066] Correspondingly, if the thickness of the ceramic material layer is less than or equal to the thickness threshold, single laser processing is performed on the ceramic material layer at the hole position to obtain the hole structure having the hole outer contour and the target machining depth.

[0067] Specifically, as shown in Figure 6 As the ceramic material layer is a core board, it is covered by the upper and lower layering structures (i.e. the spacing layers between the core board and the surface of the ceramic substrate, which can include copper foil layers and insulating layers), during the processing, the layering structure can be processed first, and then the ceramic material layer can be processed. Since the ceramic material layer as a core board is usually thick, a thickness threshold can be set, for example, 1000 μm. If the thickness of the ceramic material layer as a core board is greater than the thickness threshold, in order to reduce heat accumulation, processing can be performed along the upper and lower surfaces of the ceramic material layer to form a through hole through the ceramic material layer. If the thickness of the ceramic material layer as a core board is less than or equal to the thickness threshold, processing can be performed along one surface of the ceramic material layer to form a through hole through the ceramic material layer. The processing of the ceramic material layer can be realized by the aforementioned multiple layering laser processing.

[0068] Since the ceramic substrate includes a plurality of ceramic material layers stacked continuously, for the case where the ceramic material layer is an insulating layer of the ceramic substrate and the hole structure is a cross-layer hole structure spanning multiple ceramic material layers, processing the hole structure having the hole outer contour and the target machining depth at the hole position can include: if there are spacing layers between different layers of the ceramic material layer, laser processing the spacing layers and the ceramic material layers at the hole position based on different laser processing parameters to obtain the hole structure having the hole outer contour and the target machining depth, wherein the laser processing of the ceramic material layer is multiple layering processing.

[0069] More specifically, the laser processing parameters can be determined according to the number of layers of the cross-layer hole structure. For example, when the number of layers is less than a number threshold, a set of laser processing parameters can be used for the spacer layer and the ceramic material layer. When the number of layers is greater than or equal to the number threshold, different laser processing parameters can be used for the spacer layer and the ceramic material layer. As shown in FIG. 16A, when the ceramic material layer is close to the surface of the ceramic substrate, the number of layers is less than the number threshold, and a set of laser processing parameters can be used for the spacer layer and the ceramic material layer to laser process the spacer layer and the ceramic material layer to form a blind hole in the ceramic material layer and penetrate the spacer layer. Figure 7 As shown in FIG. 16B, when the ceramic material layer is close to the core plate, the number of layers is greater than or equal to the number threshold, and different laser processing parameters can be set for the spacer layer and the ceramic material layer. The spacer layer and the ceramic material layer are laser processed according to the laser processing parameters to form a blind hole in the ceramic material layer and penetrate the spacer layer. For example, the laser processing parameters can be flexibly selected in combination with processing efficiency, processing topography requirements, etc. For example, a slightly lower laser peak power can be switched when processing the copper foil layer.

[0070] As shown in FIG. 16A, when the ceramic material layer is close to the surface of the ceramic substrate, the number of layers is less than the number threshold, and a set of laser processing parameters can be used for the spacer layer and the ceramic material layer to laser process the spacer layer and the ceramic material layer to form a blind hole in the ceramic material layer and penetrate the spacer layer. Figure 8 As shown in FIG. 16B, when the ceramic material layer is close to the core plate, the number of layers is greater than or equal to the number threshold, and different laser processing parameters can be set for the spacer layer and the ceramic material layer. The spacer layer and the ceramic material layer are laser processed according to the laser processing parameters to form a blind hole in the ceramic material layer and penetrate the spacer layer. For example, the laser processing parameters can be flexibly selected in combination with processing efficiency, processing topography requirements, etc. For example, a slightly lower laser peak power can be switched when processing the copper foil layer.

[0071] As shown in FIG. 16B, when the ceramic material layer is close to the core plate, the number of layers is greater than or equal to the number threshold, and different laser processing parameters can be set for the spacer layer and the ceramic material layer. The spacer layer and the ceramic material layer are laser processed according to the laser processing parameters to form a blind hole in the ceramic material layer and penetrate the spacer layer. For example, the laser processing parameters can be flexibly selected in combination with processing efficiency, processing topography requirements, etc. For example, a slightly lower laser peak power can be switched when processing the copper foil layer. Figures 6 to 8 As shown in FIG. 16C, the core plate of the ceramic substrate can specifically include an insulating layer in the center of the ceramic circuit board (the insulating layer can be the aforementioned ceramic material layer, or an insulating layer made of a non-ceramic material) and copper foil layers stacked on both sides of the insulating layer. In some embodiments, a polymer material layer can be further provided between the copper foil layer and the insulating layer of the core plate to improve ductility. The core plate can be stacked with an increased layer structure on both sides, and the increased layer structure on each side includes a signal layer and an insulating layer. Figures 6 to 8 The number, position and order of each layer in the ceramic substrate are only examples, and the present application is not limited thereto.

[0072] In some embodiments of the present application, after the hole structure with a hole outer contour and a target processing depth is processed at the hole position, at least one post-processing of cleaning, hole metallization or filling with conductive material can be further included to form a conductive path in the hole structure.

[0073] It should be noted that the hole structure described above can be a circular hole, and can also be a hole structure of other shapes, as long as corresponding processing parameter adjustments are made based on the technical solutions of the present application.

[0074] It should be noted that for the above-mentioned method embodiments, in order to simply describe, they are all expressed as a combination of a series of actions, but those skilled in the art should know that the present application is not limited by the order of the described actions, because based on the present application, certain steps can be performed in other orders.

[0075] As shown in Figure 9 Fig. 4 is a schematic diagram of a controller according to an embodiment of the present application. Specifically, the controller 40 can include a processor 400, a memory 401, and a computer program 402 stored in the memory 401 and capable of running on the processor 400, such as a ceramic substrate hole structure processing program. The processor 400 implements the steps in the above various embodiments of the ceramic substrate hole structure processing method when executing the computer program 402, such as Figure 2 Steps S201-S202 shown in Fig. 2.

[0076] The computer program can be divided into one or more modules / units, which are stored in the memory 401 and executed by the processor 400 to complete the present application. The one or more modules / units can be a series of computer program instruction segments capable of completing a specific function, which are used to describe the execution process of the computer program in the controller.

[0077] The controller can include, but is not limited to, the processor 400, the memory 401. Those skilled in the art can understand that Figure 9 is merely an example of the controller and does not constitute a limitation on the controller, and can include more or fewer components than shown, or combine certain components, or different components, such as the controller can also include input / output devices, network access devices, buses, etc.

[0078] The processor 400 can be a central processing unit (CPU), and can also be other general-purpose processors, digital signal processors (DSP), application specific integrated circuits (ASIC), ready programmable gate arrays or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc. The general-purpose processor can be a microprocessor or the processor can also be any conventional processor.

[0079] The memory 401 can be an internal storage unit of the controller, such as a hard disk or a memory of the controller. The memory 401 can also be an external storage device of the controller, such as a plug-in hard disk, a Smart Media Card (SMC), a Secure Digital (SD) card, a Flash Card, etc. equipped on the controller. Further, the memory 401 can also include both the internal storage unit and the external storage device of the controller. The memory 401 is used to store the computer program and other programs and data required by the controller. The memory 401 can also be used to temporarily store data that has been output or will be output.

[0080] It should be noted that, for the convenience and brevity of description, the structure of the controller can also refer to the specific description of the structure in the method embodiment, which will not be repeated here.

[0081] Specifically, Figure 10 A laser processing device is shown, comprising:

[0082] A processing platform 10 for carrying a ceramic substrate formed by laminating a ceramic material layer and a non-ceramic material layer;

[0083] A laser 20 for emitting a laser beam;

[0084] An optical processing head 30 for guiding and focusing the laser beam generated by the laser to a hole position on the ceramic substrate;

[0085] A controller 40 for controlling the laser 20, the optical processing head 30 and the processing platform 10 to work cooperatively to realize the hole structure processing method of the ceramic substrate as described above.

[0086] In some embodiments of the present application, the laser 20 described above can be an ultra-short pulse laser (such as including nanosecond laser, picosecond laser, femtosecond laser, etc.), and the laser 20 emits an ultra-short pulse laser beam to realize the hole structure processing method of the ceramic substrate as described above. The first laser and the second laser described above can be emitted by the same laser 20. The laser 20 capable of providing appropriate laser pulse wavelength and pulse frequency parameters can be selected according to the processing requirements, and the power, spot size, pulse number, etc. of the laser beam emitted by the laser 20 can be set according to the processing requirements. Preferably, the laser 20 is an ultrafast laser capable of generating ultrafast laser (including picosecond laser, femtosecond laser, etc.).

[0087] It can be understood that the laser emitting the ultra-short pulse laser beam includes a femtosecond laser and a nanosecond laser. The femtosecond laser emits a femtosecond laser beam with a pulse width less than or equal to a picosecond order. The nanosecond laser emits a nanosecond laser beam with a pulse width of a nanosecond order. For the ceramic material layer, the pulse duration of the femtosecond laser and the nanosecond laser is extremely short, which can have a high peak power and a wide spectral bandwidth, so that the laser energy is concentrated in a very small time and space range, and multi-photon absorption and / or avalanche ionization is induced at the machining position of the hole structure, the molecular chain of the material is broken, the material is vaporized, smaller particles are formed, and rapid removal of the material is achieved. In addition, the interaction between the ultra-short pulse laser and the base material is mainly cold machining, which can further reduce the thermal influence on the surrounding structure during the machining process, and is beneficial to obtain a better machining cross-sectional morphology. Furthermore, when the hole structure to be machined needs to simultaneously penetrate the ceramic material layer and the copper foil layer which are continuously stacked, the ultra-short pulse laser can directly act on the copper foil layer, and there is no need for additional brown or blackening process pretreatment of the copper, so that the hole structure machining of the continuously penetrating multi-layer continuously stacked ceramic material layer can be realized.

[0088] A beam control system can be provided between the laser 20 and the optical machining head 30. The beam control system can be used for controlling and transmitting the laser beam, and can include but is not limited to a galvanometer and an acousto-optic deflector.

[0089] In some embodiments of the present application, the machining device can further include a vision system, which can be used for positioning the hole structure machining position of the ceramic substrate.

[0090] The embodiments of the present application also provide a ceramic circuit board, which can include:

[0091] The ceramic substrate is formed by stacking a ceramic material layer and a non-ceramic material layer;

[0092] The hole structure is located in the ceramic material layer, and is obtained by machining the ceramic substrate according to the cross-layer hole machining method described above or the machining device described above. Figure 2 Figure 10 The hole structure is located in the ceramic material layer, and is obtained by machining the ceramic substrate according to the cross-layer hole machining method described above or the machining device described above.

[0093] ​Those skilled in the art can clearly understand that, for the convenience and brevity of description, only the above-mentioned division of each functional unit and module is exemplified, and in actual application, the above-mentioned functions can be completed by different functional units and modules based on needs, that is, the internal structure of the device is divided into different functional units or modules to complete all or part of the functions described above. Each functional unit and module in the embodiment can be integrated in one processing unit, or each unit can be physically present separately, or two or more units can be integrated in one unit. The above-mentioned integrated unit can be realized in the form of hardware or software. In addition, the specific names of each functional unit and module are only for the convenience of mutual distinction, and do not limit the protection scope of the present application. The specific working process of the units and modules in the above system can refer to the corresponding process in the foregoing method embodiments, which will not be described here.

[0094] In the above embodiments, the description of each embodiment has its own emphasis, and the parts not described or recorded in detail in a certain embodiment can be referred to the related description of other embodiments.

[0095] Those of ordinary skill in the art can realize that the units and algorithm steps of each example described in combination with the embodiments disclosed herein can be realized in electronic hardware or a combination of computer software and electronic hardware. Whether the functions are executed in hardware or software depends on the specific application and design constraints of the technical solution. Professional technicians can use different methods to implement the described functions for each specific application, but such implementation should not be considered beyond the scope of the present application.

[0096] In the embodiments provided in the present application, it should be understood that the disclosed devices / controllers / systems and methods can be implemented in other ways. For example, the device / controller / system embodiments described above are only schematic, for example, the division of the modules or units is only a logical function division, and actual implementation can have another division manner, for example, a plurality of units or components can be combined or integrated into another system, or some features can be ignored or not executed. In addition, the coupling or direct coupling or communication connection between the shown or discussed each other can be indirect coupling or communication connection through some interface, device or unit, which can be electrical, mechanical or other forms.

[0097] The units described as separate components can or can not be physically separated, and the components shown as units can or can not be physical units, that is, they can be located in one place, or can be distributed on a plurality of network units. Some or all of the units can be selected based on actual needs to achieve the purpose of the embodiment.

[0098] In addition, each of the function units in each of the embodiments of the present application can be integrated in one processing unit, or each unit can be physically present separately, or two or more units can be integrated in one unit. The integrated unit can be realized in the form of hardware or in the form of a software function unit.

[0099] The integrated module / unit, if realized in the form of a software function unit and sold or used as an independent product, can be stored in a computer readable storage medium. Based on such understanding, all or part of the processes in the above-mentioned embodiment methods can also be implemented by a computer program instructing related hardware to complete, and the computer program can be stored in a computer readable storage medium. When the processor executes the computer program, the steps of each method embodiment described above can be implemented. The computer program includes computer program code, which can be in the form of source code, object code, executable file, or some intermediate form. The computer readable medium can include any entity or device capable of carrying the computer program code, recording medium, U disk, mobile hard disk, magnetic disk, optical disk, computer memory, read-only memory (ROM), random access memory (RAM), electrical carrier signal, telecommunication signal, and software distribution medium, etc. It should be noted that the content included in the computer readable medium can be appropriately increased or decreased based on the requirements of legislation and patent practice in the jurisdiction, for example, in some jurisdictions, based on legislation and patent practice, the computer readable medium does not include electrical carrier signals and telecommunication signals.

[0100] The above-described embodiments are only used to illustrate the technical solutions of the present application, rather than limit them; although the present application has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that they can still modify the technical solutions recorded in the foregoing embodiments, or make equivalent replacements for some technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present application, and should be included in the protection scope of the present application.

Claims

1. A method for processing hole structures on a ceramic substrate, characterized in that, The method for processing the hole structure of the ceramic substrate is applied to processing hole structures on the ceramic material layer of the ceramic substrate. The method for processing the hole structure of the ceramic substrate includes: Obtain the machining parameters of the hole structure, including the hole position, target machining depth, and hole outer contour; A hole structure with the outer contour of the hole and the target machining depth is machined at the hole location; wherein the hole structure machining process is a multi-layer machining process, each machining corresponding to a layer, the multi-layer machining includes a first layer, and the machining process of the first layer includes: using a first laser to perform laser cutting along a machining path matching the outer contour of the hole at a first machining depth, and using a second laser to perform laser scanning machining along the enclosed area of ​​the outer contour of the hole at a second machining depth, wherein the first machining depth is greater than the second machining depth; after the multi-layer machining, the cumulative value of the first machining depth is greater than or equal to the target machining depth, and the cumulative value of the second machining depth is greater than or equal to the target machining depth.

2. The method for processing the hole structure of a ceramic substrate as described in claim 1, characterized in that, The first laser and the second laser are emitted by the same laser, which is an ultrashort pulse laser. The peak energy of the first laser is greater than that of the second laser, and the spot size of the first laser is smaller than that of the second laser.

3. The method for processing the hole structure of a ceramic substrate as described in claim 2, characterized in that, The diameter of the first laser spot is greater than or equal to 10 micrometers and less than or equal to 40 micrometers, and the diameter of the second laser spot is greater than or equal to 40 micrometers and less than or equal to 60 micrometers.

4. The method for processing the hole structure of a ceramic substrate as described in claim 1, characterized in that, The multi-layered processing also includes a second layer other than the first layer, and the processing of the second layer includes: A second laser is used to perform laser scanning processing along the enclosed area of ​​the outer contour of the hole at a third processing depth, wherein the third processing depth is less than or equal to the difference between the cumulative value of the current first processing depth and the cumulative value of the second processing depth.

5. The method for processing the hole structure of a ceramic substrate as described in claim 4, characterized in that, Before machining the hole structure having the outer contour of the hole and the target machining depth at the hole location, the process further includes: Based on the processing parameters and laser processing parameters, the number of layers for the multiple layered processing is planned to obtain the total number of layers N, where N is greater than 1; The Nth layer is used as the second layer.

6. The method for processing the hole structure of a ceramic substrate as described in any one of claims 1 to 5, characterized in that, The ceramic material layer is the core plate and / or insulating layer of the ceramic substrate.

7. The method for processing the hole structure of a ceramic substrate as described in claim 6, characterized in that, The ceramic material layer is the core plate of a ceramic substrate, and the machining of the hole structure having the outer contour of the hole and the target machining depth at the hole location includes: If the thickness of the ceramic material layer is greater than the thickness threshold, then double-sided laser processing is performed on the ceramic material layer at the hole location to obtain a hole structure with the outer contour of the hole and the target processing depth. Each side laser processing includes at least one layer processing.

8. The method for processing the hole structure of a ceramic substrate as described in claim 6, characterized in that, The ceramic substrate comprises multiple layers of continuously stacked ceramic material, and the machining of a hole structure having the outer contour of the hole and the target machining depth at the hole location includes: If there is a spacer layer between different ceramic material layers, then laser processing is performed on the spacer layer and the ceramic material layer respectively based on different laser processing parameters at the hole location to obtain a hole structure with the outer contour of the hole and the target processing depth, wherein the laser processing process of the ceramic material layer is the multiple layer processing.

9. The method for processing the hole structure of a ceramic substrate as described in any one of claims 1 to 5, characterized in that, The diameter of the pore structure is 100 μm to 400 μm; The first processing depth is 30 μm to 50 μm. The second processing depth is greater than the first processing depth, and the depth difference between the second processing depth and the first processing depth is 20 μm to 60 μm.

10. The method for processing the hole structure of a ceramic substrate as described in any one of claims 1 to 5, characterized in that, After machining a hole structure having the outer contour of the hole and the target machining depth at the hole location, the process further includes: The pore structure is subjected to at least one of the following post-treatments: cleaning, pore metallization, or filling with a conductive material, to form a conductive path in the pore structure.

11. A controller comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, characterized in that, When the processor executes the computer program, it implements the steps of the hole structure processing method for the ceramic substrate as described in any one of claims 1 to 10.

12. A laser processing device, characterized in that, include: A processing platform for supporting a ceramic substrate, the ceramic substrate being formed by stacking ceramic material layers and non-ceramic material layers; A laser, used to emit a laser beam; An optical processing head is used to guide and focus the laser beam generated by the laser onto a hole in the ceramic substrate. A controller is used to control the laser, the optical processing head and the processing platform to work together to realize the hole structure processing method of ceramic substrate as described in any one of claims 1 to 10.

13. The laser processing equipment as described in claim 12, characterized in that, The laser is an ultrashort pulse laser, and the first laser and the second laser are emitted by the same laser.

14. A ceramic circuit board, characterized in that, include: A ceramic substrate is formed by stacking layers of ceramic material and non-ceramic material. A hole structure is located in the ceramic material layer, and the hole structure is obtained by the hole structure processing method of the ceramic substrate according to any one of claims 1 to 10 or by processing the ceramic substrate using the laser processing equipment according to any one of claims 12 to 13.

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