A reaction chamber for high hydrogen process and a plasma processing apparatus

Abstract

The application relates to the technical field of wafer processing equipment, in particular to a reaction cavity for a high-hydrogen process and a plasma processing equipment, which comprises a quartz tube, a first coil is arranged outside the quartz tube and is connected with an external radio frequency power source, a Faraday shield cage is arranged outside the quartz tube and between the quartz tube and the first coil, a plurality of slits are formed in the Faraday shield cage and extend along the axial direction, a blocking piece is arranged in the quartz tube, and the structure formed by the orthographic projection of the blocking piece on the circumferential side wall of the Faraday shield cage covers the structure formed by the orthographic projection of the first coil on the circumferential side wall of the Faraday shield cage. The blocking piece arranged in the quartz tube can effectively block the concentrated bombardment of the plasma generated in the high-hydrogen process on the inner wall of the quartz tube, significantly reduces the erosion of the quartz tube and the peeling of the particles, and improves the process yield of the plasma processing equipment and the service life of the equipment.

Description

A reaction chamber and plasma treatment equipment for high-hydrogen processes Technical Field

[0001] This invention relates to the field of wafer processing equipment technology, and more particularly to a reaction chamber and plasma processing equipment for high-hydrogen processes. Background Technology

[0002] In ICP-type plasma resist stripping or etching equipment used in high-hydrogen processes, although the high-frequency electromagnetic field generated by the coil can effectively excite the plasma, the unavoidable capacitive coupling between the coil and the gas in the reaction chamber causes the plasma (especially hydrogen plasma) to bombard the quartz dielectric window, resulting in erosion. Although setting a Faraday shield between the coil and the quartz tube can alleviate this problem to some extent, the intersection of the open area of ​​the slit and the coil will still be subject to concentrated bombardment by hydrogen ions. After long-term use, this will still lead to the quartz tube being eroded and producing particulate matter flakes, which will then contaminate the wafer, affecting the equipment life and process yield. Summary of the Invention

[0003] The purpose of this invention is to provide a reaction chamber and plasma processing equipment for high-hydrogen processes, which reduces the erosion of the quartz tube and the problem of particulate matter shedding by reducing the bombardment of the quartz tube by the plasma.

[0004] To achieve the above objectives, the present invention provides a reaction chamber for a high-hydrogen process, comprising:

[0005] Quartz tube, at least part of the shaft section is made of quartz tube;

[0006] The first coil is arranged around the outside of the quartz tube and connected to an external radio frequency power supply. It is used to generate an alternating magnetic field that can enter the quartz tube and induce an eddy current electric field through the alternating magnetic field to accelerate the collision of free electrons with the process gas to generate plasma.

[0007] A Faraday shielding cage is arranged around the quartz tube and between the quartz tube and the first coil. The Faraday shielding cage has several slits that penetrate its sidewalls and extend axially to allow the alternating magnetic field to enter the quartz tube through the slits.

[0008] A blocking element is disposed inside the quartz tube, and the structure formed by the orthographic projection of the blocking element on the circumferential sidewall of the Faraday shielding cage covers the structure formed by the orthographic projection of the first coil on the circumferential sidewall of the Faraday shielding cage, so as to block the plasma from bombarding the inner wall of the quartz tube.

[0009] Optionally, the blocking element includes a plurality of blocking plates, which are spaced apart along the circumference of the quartz tube, and the structure formed by the orthographic projection of the blocking plates on the circumferential sidewall of the Faraday shielding cage covers the slit.

[0010] Optionally, the baffle plate includes a first sub-baffle plate, a second sub-baffle plate, a docking plate, and a drive assembly;

[0011] The first sub-blocking plate and the second sub-blocking plate are provided with the docking plate, and the axial height of the docking plate is equal to the axial height of the first sub-blocking plate or the second sub-blocking plate;

[0012] The other of the first sub-blocking plate and the second sub-blocking plate is provided with a mounting groove adapted to the docking plate. The circumferential width of the mounting groove is greater than or equal to the circumferential width of the docking plate, and the docking plate is at least partially movably inserted into the mounting groove.

[0013] The driving component is disposed in at least one of the first sub-blocking plate and the second sub-blocking plate to drive the first sub-blocking plate and / or the second sub-blocking plate to move towards each other or away from each other, so as to adjust the circumferential width of the blocking plate by adjusting the circumferential width of the mating plate inserted into the mounting groove.

[0014] Optionally, the driving component includes a permanent magnet block and a second coil;

[0015] The permanent magnet block is disposed in at least one of the first sub-blocking plate and the second sub-blocking plate;

[0016] The outer wall of the quartz tube is provided with a support groove extending circumferentially along the quartz tube.

[0017] The second coil is provided in a plurality of them, and the plurality of second coils are arranged at intervals in the support groove along the extension direction of the support groove. An insulating layer is provided between each second coil and the support groove. There is a potential difference between two adjacent second coils, so that when two adjacent second coils are energized, a traveling wave magnetic field is generated along the circumference of the quartz tube, so as to control the permanent magnet block to drive the first sub-blocking plate and / or the second sub-blocking plate to move towards each other or away from each other in the traveling wave magnetic field.

[0018] Optionally, the drive component may further include a sensor and a processor;

[0019] The sensing end of the sensor is positioned towards the slit to collect information about the circumferential width of the slit;

[0020] The processor is connected to the sensor and a plurality of second coils, and the processor controls the plurality of second coils to be energized according to the circumferential width information of the slit to generate the traveling wave magnetic field.

[0021] Optionally, the drive assembly further includes a connecting rod and a sliding block;

[0022] At least one of the first sub-blocking plate and the second sub-blocking plate has a sliding groove extending circumferentially along one side wall of the quartz tube facing the quartz tube.

[0023] The sliding block is slidably disposed within the sliding groove;

[0024] One end of the connecting rod is connected to the sliding block, and the other end is connected to the quartz tube.

[0025] Optionally, the first coil includes a plurality of annular segments spaced apart along the axial direction of the quartz tube, and a plurality of connecting segments disposed between two adjacent annular segments and used to connect the two adjacent annular segments.

[0026] The baffle plate includes a plurality of baffle blocks arranged at intervals along the axial direction of the quartz tube. The structure formed by the orthographic projection of each baffle block on the circumferential sidewall of the Faraday shielding cage corresponds one-to-one with the structure formed by the orthographic projection of each annular segment and each connecting segment on the circumferential sidewall of the Faraday shielding cage.

[0027] Optionally, a snap-fit ​​portion is provided on the inner wall of the quartz tube, the snap-fit ​​portion being provided along the axial direction of the quartz tube and extending from the top of the quartz tube to the bottom of the quartz tube.

[0028] The blocking block has a snap-fit ​​protrusion on one side wall near the quartz tube. The snap-fit ​​protrusion is movably inserted into the snap-fit ​​part to realize the installation of the blocking block and the quartz tube.

[0029] Optionally, the snap-fit ​​portion is a snap-fit ​​groove recessed from the top end of the inner wall of the quartz tube toward the bottom end face. The snap-fit ​​groove includes a first mounting groove extending circumferentially along the quartz tube and a second mounting groove extending radially along the quartz tube. The second mounting groove is connected to the first mounting groove, and the circumferential width of the second mounting groove is smaller than the circumferential width of the first mounting groove, so as to form a limiting structure to prevent the blocking block from radially disengaging from the quartz tube.

[0030] The snap-fit ​​protrusion includes a protrusion that matches the first mounting groove and a first connecting portion that matches the second mounting groove. One end of the first connecting portion is fixedly disposed on the blocking block, and the other end is connected to the protrusion.

[0031] Optionally, the snap-fit ​​part is a fixing boss fixedly disposed on the inner side wall of the quartz tube, and at least one circumferential side wall of the fixing boss is recessed inward with a limiting groove.

[0032] The snap-fit ​​protrusion includes a second connecting portion connected to the blocking block and a limiting portion inserted into the limiting groove along the axial direction of the quartz tube, so that the blocking block and the quartz tube can be installed when the limiting portion abuts against the side wall of the limiting groove.

[0033] Optionally, the axial height of the snap-fit ​​protrusion is equal to the axial height of the blocking block, so that when two adjacent snap-fit ​​protrusions abut, two adjacent blocking blocks abut.

[0034] Alternatively, the axial height of the snap-fit ​​protrusion may be greater than the axial height of the blocking block, so that when two adjacent snap-fit ​​protrusions abut, there is a gap between the two adjacent blocking blocks.

[0035] Optionally, the blocking member is spaced apart from the quartz tube, and the radial distance between the blocking member and the quartz tube is greater than 0 mm and less than 2 mm.

[0036] Optionally, the circumferential width of the slit is greater than 1 mm and less than 20 mm, and the axial height is greater than 5 cm and less than 30 cm; the circumferential width of the baffle is greater than 1.5 mm and less than 20.5 mm, and the axial height is greater than 2.5 cm and less than 15 cm; the axial height of the first coil is greater than 2 cm and less than 14.5 cm.

[0037] Optionally, the thickness of the baffle plate is greater than 1 mm and less than 10 mm.

[0038] To achieve the above objectives, the present invention also provides a plasma processing apparatus, comprising:

[0039] The aforementioned reaction chamber for high-hydrogen processes;

[0040] A process gas supply system, connected to a quartz tube, supplies process gas, including hydrogen-containing gas, into the quartz tube.

[0041] A vacuum system, connected to the quartz tube, is used to extract gas from the quartz tube and maintain the required vacuum level in the quartz tube;

[0042] The radio frequency power supply is electrically connected to the first coil.

[0043] The beneficial effects of this invention are as follows:

[0044] This invention effectively blocks the concentrated bombardment of the inner wall of the quartz tube by setting a blocking component inside the quartz tube and making its orthogonal projection structure on the Faraday shielding cage completely cover the projection structure of the first coil. This significantly reduces the problems of quartz tube erosion and particulate matter shedding, thereby improving the process yield and service life of the plasma processing equipment. Attached Figure Description

[0045] Figure 1 is a schematic diagram of the structure of the reaction chamber used in the high-hydrogen process according to an embodiment of the present invention;

[0046] Figure 2 is a schematic diagram of the Faraday shielding cage, quartz tube and blocking element in the reaction chamber used in the high hydrogen process according to an embodiment of the present invention;

[0047] Figure 3 is a schematic diagram of the Faraday shielding cage in the reaction chamber used in the high-hydrogen process according to an embodiment of the present invention;

[0048] Figure 4 is a schematic diagram of the snap-fit ​​part and snap-fit ​​protrusion in the reaction chamber used in the high-hydrogen process according to an embodiment of the present invention.

[0049] Figure 5 is a schematic diagram of the structure of the snap-fit ​​part and snap-fit ​​protrusion in the reaction chamber of the high-hydrogen process according to an embodiment of the present invention;

[0050] Figure 6 is a schematic diagram of the structure of the snap-fit ​​protrusion in the reaction chamber of the high-hydrogen process according to an embodiment of the present invention, wherein the axial height of the snap-fit ​​protrusion is equal to the axial height of the blocking block.

[0051] Figure 7 is a schematic diagram of the structure of the snap-fit ​​protrusion in the reaction chamber of the high-hydrogen process according to an embodiment of the present invention, in which the axial height of the snap-fit ​​protrusion is greater than the axial height of the blocking block.

[0052] Figure 8 is a schematic diagram of the structure of the first sub-baffle plate, the second sub-baffle plate, the docking plate and the driving assembly in the reaction chamber of the high-hydrogen process according to an embodiment of the present invention.

[0053] Explanation of reference numerals in the attached figures:

[0054] 1. Quartz tube; 2. First coil; 3. Faraday shielding cage; 31. Slit; 4. Blocking component; 41. First sub-blocking plate; 42. Second sub-blocking plate; 5. Snap-fit ​​part; 51. First mounting groove; 52. Second mounting groove; 53. Fixing boss; 54. Limiting groove; 6. Snap-fit ​​protrusion; 61. First connecting part; 62. Protrusion; 63. Second connecting part; 64. Limiting part; 7. Connecting plate; 8. Mounting groove; 9. Drive assembly; 91. Permanent magnet; 92. Support groove; 93. Insulating layer; 94. Second coil; 95. Connecting rod; 96. Sliding block; 97. Sliding groove. Detailed Implementation

[0055] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions in the embodiments of this invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this invention. All other embodiments obtained by those skilled in the art based on the embodiments of this invention without inventive effort are within the scope of protection of this invention. Unless otherwise defined, the technical or scientific terms used herein should have the ordinary meaning understood by those skilled in the art. The terms "comprising" and similar expressions used herein mean that the element or object preceding the word covers the element or object listed following the word and its equivalents, but do not exclude other elements or objects.

[0056] To address the problems existing in the prior art, embodiments of the present invention provide a reaction chamber for high-hydrogen processes, as shown in Figures 1, 2 and 3, comprising a quartz tube 1, a first coil 2, a Faraday shielding cage 3 and a blocking element 4.

[0057] In one embodiment, as shown in FIG1, the first coil 2 is arranged around the outside of the quartz tube and connected to an external radio frequency power supply. It is used to generate an alternating magnetic field that can penetrate the quartz tube and induce an eddy current electric field within the alternating magnetic field, thereby accelerating free electrons to collide with process gas to generate plasma. Specifically, the high-frequency alternating magnetic field generated by the first coil 2 under the drive of the radio frequency power supply can penetrate the quartz tube wall and induce a strong eddy current electric field within the quartz tube 1. This electric field can effectively accelerate free electrons, giving them sufficient kinetic energy to collide and ionize with process gas molecules, thereby efficiently and stably exciting and maintaining high-density plasma, providing a uniform and controllable plasma environment for wafer processing.

[0058] In one embodiment, as shown in Figures 1, 2, and 3, the Faraday shielding cage 3 is arranged around the quartz tube and between the quartz tube and the first coil 2. The Faraday shielding cage 3 has several slits 31 extending axially through its sidewalls to allow the alternating magnetic field to enter the quartz tube through the slits 31. In this embodiment, the Faraday shielding cage 3, arranged around the quartz tube and the first coil 2, effectively blocks harmful capacitive coupling between the coil and the plasma through its axially extending slits 31. Specifically, the Faraday shielding cage 3, as a grounded metal shielding layer, effectively suppresses capacitive coupling between the first coil and the plasma caused by the potential difference, thereby reducing the plasma potential and the bombardment energy on the quartz tube 1. Simultaneously, these slits 31 allow the alternating magnetic field generated by the first coil 2 to smoothly penetrate and enter the quartz tube. Thus, while suppressing capacitive coupling, it ensures that the inductive coupling mechanism can still efficiently excite and maintain a uniform, high-density plasma, achieving both effective protection of the quartz tube and consideration of plasma process performance.

[0059] In one embodiment, as shown in Figures 1 and 2, the blocking member 4 is disposed inside the quartz tube, and the structure formed by the orthographic projection of the blocking member 4 on the circumferential sidewall of the Faraday shielding cage 3 covers the structure formed by the orthographic projection of the first coil 2 on the circumferential sidewall of the Faraday shielding cage 3, in order to block the plasma from bombarding the inner wall of the quartz tube. This allows for the direct physical blocking of the bombardment path of the plasma (especially high-energy hydrogen ions) concentrated intruding along the magnetic field slit 31, thereby forming an effective protective barrier between the plasma and the inner wall of the quartz tube. This fundamentally avoids damage and particulate matter contamination to the quartz tube caused by long-term local erosion, significantly improving the stability and lifespan of the equipment under high-hydrogen processes.

[0060] In one embodiment, the blocking member 4 is an integral tubular structure. This embodiment has a complete circumferential protective surface through the integral tubular structure of the blocking member 4, which can provide continuous and gapless comprehensive protection for the inner wall of the quartz tube, thereby preventing plasma from bombarding the quartz tube from any direction. At the same time, the structure has strong integrity and does not require complex assembly, which simplifies the installation process, improves the structural reliability, and avoids the problem of local protection failure that may be caused by the existence of component joints.

[0061] In another embodiment, as shown in Figure 2, the blocking element 4 includes several blocking plates, which are spaced apart circumferentially along the quartz tube. The structure formed by the orthographic projection of the blocking plates onto the circumferential sidewall of the Faraday shield 3 covers the slit 31. This embodiment employs several circumferentially spaced blocking plates. Compared to a one-piece tubular structure, this not only allows for precise coverage of the slit 31 through its projection to effectively block concentrated plasma bombardment of the quartz tube, but also the split design allows each blocking plate to expand or contract independently. The spacing between the blocking plates provides flexible compensation space for their deformation, effectively alleviating thermal stress during deformation and reducing or avoiding the risk of cracking or deformation of the blocking element 4. Simultaneously, the spaced arrangement provides a regular flow channel for the process gas, which is beneficial for maintaining the uniformity and stability of the gas flow field within the quartz tube 1.

[0062] In one embodiment, the blocking plate is an arc-shaped plate; however, in other embodiments, it is not limited to an arc-shaped plate, which will not be elaborated here.

[0063] In the above embodiments, the specific number of the baffles can be equal to and correspond one-to-one with the number of slits 31 opened on the Faraday shield 3, so that the radial projection of each baffle can accurately cover a slit 31. This matching relationship in quantity ensures that no matter which slit 31 area the plasma enters through, there is a corresponding baffle providing directional protection on its path. This achieves high-efficiency protection of the inner wall of the quartz tube with minimal structural coverage area, while avoiding the problem that the integral structure may cause excessive interference to the airflow environment inside the cavity.

[0064] In one embodiment, as shown in FIG1, the first coil 2 includes a plurality of annular segments spaced apart along the axial direction of the quartz tube, and a plurality of connecting segments disposed between adjacent annular segments and used to connect adjacent annular segments; thus, the overall structure of the first coil 2 can be an axially extending spiral or wave-shaped structure. This design can form multiple concentrated and uniformly distributed induction magnetic field regions along the axial direction of the quartz tube, thereby exciting a more uniform and stable plasma in the quartz tube 1, effectively improving the process uniformity of wafer processing.

[0065] In one embodiment, as shown in FIG1, the blocking plate includes a plurality of blocking blocks arranged at intervals along the axial direction of the quartz tube. Preferably, the central axes of the blocking blocks coincide. The structure formed by the orthographic projection of each blocking block on the circumferential sidewall of the Faraday shielding cage 3 corresponds one-to-one with the structure formed by the orthographic projection of each annular segment and each connecting segment on the circumferential sidewall of the Faraday shielding cage 3. It can be understood that when one slit corresponds to 3 annular segments and 2 connecting segments, the number of blocking blocks is 5.

[0066] The configuration of this embodiment enables "point-to-point" localized and precise protection of the alternating magnetic field generation area, ensuring that key parts of the coil where plasma excitation is strongest are shielded by blocking blocks. This effectively protects the quartz tube while minimizing interference with the plasma generation space and magnetic field distribution, thus optimizing the balance between protection effectiveness and process performance.

[0067] In one embodiment, as shown in Figures 4 and 5, a snap-fit ​​portion 5 is provided on the inner wall of the quartz tube 1. The snap-fit ​​portion 5 extends along the axial direction of the quartz tube 1 from the top to the bottom of the quartz tube 1. A snap-fit ​​protrusion 6 is provided on the side wall of the blocking block near the quartz tube. The snap-fit ​​protrusion 6 is movably inserted into the snap-fit ​​portion 5 to realize the installation of the blocking block and the quartz tube 1. This embodiment provides a reliable way to conveniently install and position the blocking block along the axial direction of the quartz tube through the insertion and cooperation of the snap-fit ​​portion 5 and the snap-fit ​​protrusion 6, so that each blocking block can be accurately covered by the corresponding slit 31. At the same time, this movable insertion structure allows the blocking block to have a certain adaptive adjustment space in the radial direction, which not only ensures the installation accuracy, but also effectively absorbs the dimensional changes caused by thermal expansion, prevents damage to the quartz tube 1 or the blocking block due to stress concentration, and improves the stability and service life of the structure.

[0068] In one embodiment, as shown in FIG4, the locking portion includes a first mounting groove 51 extending circumferentially along the quartz tube 1 and a second mounting groove 52 extending radially along the quartz tube 1. The second mounting groove 52 is connected to the first mounting groove 51, and the circumferential width of the second mounting groove 52 is smaller than the circumferential width of the first mounting groove 51, so as to form a limiting structure to prevent the blocking block from radially disengaging from the quartz tube 1. That is, the structure of the cavities of the first mounting groove 51 and the second mounting groove 52 on the radial cross section of the quartz tube 1 is a first T-shaped structure. The locking protrusion 6 includes a protrusion 62 adapted to the first mounting groove 51 and a first connecting portion 61 adapted to the second mounting groove 52. One end of the first connecting portion 61 is fixedly disposed on the blocking block, and the other end is connected to the protrusion 62. That is, the structure of the locking protrusion 6 on the radial cross section of the quartz tube is a second T-shaped structure, and the second T-shaped structure is adapted to the first T-shaped structure.

[0069] This embodiment uses the precise fit between the first T-shaped locking groove and the second T-shaped locking protrusion 6 to form a reliable axial insertion and circumferential limiting structure. This allows the blocking block to be quickly, accurately positioned, and securely installed through a simple axial insertion action. The abutment between the first connecting part 61 and the side wall of the first mounting groove 51 effectively limits the limit displacement of the blocking block in the radial direction toward the center of the reaction chamber. At the same time, this plug-in design avoids applying complex mechanical fastening to the side wall of the quartz tube, ensuring both the convenience of installation and structural strength, while maximizing the structural integrity of the quartz tube and the reliability of its long-term use.

[0070] In one embodiment, as shown in FIG5, the snap-fit ​​part 5 is a fixing boss 53 fixedly disposed on the inner sidewall of the quartz tube, and at least one circumferential sidewall of the fixing boss 53 is recessed inwardly into a limiting groove 54; the snap-fit ​​protrusion 6 includes a second connecting part 63 connected to the blocking block, and a limiting part 64 inserted into the limiting groove 54 along the axial direction of the quartz tube, so that the blocking block and the quartz tube are installed under the contact of the limiting part 64 with the groove sidewall of the limiting groove 54.

[0071] In this embodiment, a fixed boss 53 with a limiting groove 54 pre-fixed to the inner wall of the quartz tube provides a modular and high-precision installation reference for the blocking block. After the limiting part 64 is axially inserted into the limiting groove 54, its contact with the side wall of the groove can effectively limit the displacement of the blocking block in the circumferential and radial directions, ensuring its precise alignment with the slit 31 in the projected position. At the same time, this design transfers the main installation stress point from the quartz tube wall to the independent fixed boss 53, reducing the structural impact on the quartz tube itself and the processing difficulty, and improving the reliability and maintainability of the installation.

[0072] In one embodiment, both the snap-fit ​​portion 5 and the snap-fit ​​protrusion 6 are made of the same material as the quartz tube. This not only ensures a high degree of matching of the thermal expansion coefficients between the components and avoids thermal stress damage caused by temperature differences, but also ensures that the induced magnetic field can pass through and enter the quartz tube 1 without obstruction to efficiently excite plasma, as quartz, as a non-metallic dielectric material, will not shield or cause eddy current loss to the alternating magnetic field generated by the first coil 2. This achieves a balance between structural reliability and optimal electromagnetic performance.

[0073] In one embodiment, the blocking member 4, whether it is an integral tubular structure or several separate blocking plates, can be installed with the quartz tube through the cooperation of the snap-fit ​​part 5 and the snap-fit ​​protrusion 6, which will not be described in detail here.

[0074] In one embodiment, as shown in FIG6, the axial height of the snap-fit ​​protrusion 6 is equal to the axial height of the blocking block, so that when two adjacent snap-fit ​​protrusions 6 abut, the two adjacent blocking blocks abut. In this embodiment, when the axial height of the snap-fit ​​protrusion 6 is equal to the axial height of the blocking block, the adjacent blocking blocks can achieve tight end face abutment through their snap-fit ​​protrusions 6 after installation, thereby forming a continuous and uninterrupted protective barrier (e.g., a blocking plate or an integrated tubular structure) in the axial direction of the quartz tube, ensuring that plasma does not invade from the joint between adjacent blocking blocks; at the same time, this dual cooperation structure of "block abutment and protrusion abutment" greatly enhances the overall rigidity and stability of the entire blocking component 4 in the axial direction, effectively preventing minor displacement or vibration that may occur under plasma impact or airflow disturbance.

[0075] In another embodiment, as shown in FIG7, the axial height of the snap-fit ​​protrusion 6 is greater than the axial height of the blocking block, so that when two adjacent snap-fit ​​protrusions 6 abut, there is a gap between the two adjacent blocking blocks. In this embodiment, when the axial height of the snap-fit ​​protrusion 6 is greater than the axial height of the blocking block, the adjacent blocking blocks can achieve tight abutment through their snap-fit ​​protrusions 6 after installation, while forming a preset axial gap between the two adjacent blocking blocks. This gap provides the necessary deformation compensation space for the blocking blocks to expand due to heat, effectively avoiding stress concentration caused by the obstruction of thermal expansion. At the same time, the small airflow channel formed by the gap helps to balance the local air pressure and temperature distribution in the reaction chamber, thereby improving the thermal adaptability of the system while ensuring structural stability.

[0076] In one embodiment, as shown in FIG8, the barrier plate includes a first sub-barrier plate 41, a second sub-barrier plate 42, a docking plate 7, and a drive assembly 9.

[0077] In one embodiment, as shown in FIG8, either the first sub-blocking plate 41 or the second sub-blocking plate 42 is provided with the docking plate 7. This means that the docking plate 7 can be disposed on either the first sub-blocking plate 41 or the second sub-blocking plate 42. The axial height of the docking plate 7 is equal to the axial height of either the first sub-blocking plate 41 or the second sub-blocking plate 42.

[0078] In one embodiment, as shown in FIG8, the other of the first sub-blocking plate 41 and the second sub-blocking plate 42 is provided with a mounting groove 8 adapted to the docking plate. This means that when the docking plate 7 is disposed on the first sub-blocking plate 41, the mounting groove 8 is disposed on the second sub-blocking plate 42, and vice versa. The circumferential width of the mounting groove 8 is greater than or equal to the circumferential width of the docking plate 7, and the docking plate 7 is at least partially movably inserted into the mounting groove 8.

[0079] The two embodiments described above, by designing the axial height of the docking plate 7 to be consistent with the axial height of the first and second sub-blocking plates and movably inserting it into the mounting groove 8, constitute a covering structure that can dynamically adjust the circumferential width and axial height of the blocking plate. This allows the blocking plate to precisely control the depth of the docking plate 7 extending into the mounting groove 8 according to the actual circumferential width of the slit 31 of the Faraday shielding cage 3, thereby adjusting the circumferential width of the blocking plate in real time to adapt to the changes in the width of the slit 31 caused by thermal expansion. This ensures that the blocking plate's coverage of the slit 31 is always effective, achieving continuous and precise protection against plasma bombardment and improving the stability and reliability of the equipment under variable temperature conditions.

[0080] Meanwhile, the dynamically adjustable circumferential width of the baffle plate enhances the adaptability and versatility of the reaction chamber, enabling precise adjustment of the overall circumferential width of the baffle plate via the drive component 9. This allows for accurate matching of the actual size and distribution differences of the slits 31 on different models of Faraday shielding cages 3. This adaptive characteristic not only ensures that the baffle plate can achieve complete and effective coverage of the slit 31 projection in various equipment specifications, fundamentally solving the problem of protection failure caused by component tolerances or model changes, but also significantly enhances the platform application potential of the reaction chamber structure and the convenience of equipment maintenance.

[0081] In another embodiment, the difference from the above embodiment is that no drive component is provided. The circumferential movement of the first sub-blocking plate and the second sub-blocking plate can be adjusted manually or with the aid of mechanical tools.

[0082] In one embodiment, as shown in FIG8, the driving component 9 is disposed on at least one of the first sub-blocking plate 41 and the second sub-blocking plate 42 to drive the first sub-blocking plate and / or the second sub-blocking plate to move towards each other or away from each other, so as to adjust the circumferential width of the blocking plate by adjusting the circumferential width of the mating plate inserted into the mounting groove. It can be understood that, in one specific embodiment, the number of driving components 9 is set to one, which can be disposed on the first sub-blocking plate 41 or the second sub-blocking plate 42; in another specific embodiment, the number of driving components 9 is set to two, which can be disposed on the first sub-blocking plate 41 and the second sub-blocking plate 42 respectively. This embodiment precisely controls the circumferential movement of the first sub-blocking plate 41 through the drive component 9, which can dynamically adjust the depth of the docking plate 7 extending into the mounting groove 8, thereby changing the overall circumferential width of the blocking plate in real time. This allows it to adaptively compensate for the width change of the slit 31 of the Faraday shielding cage 3 caused by thermal expansion, ensuring that the projection coverage of the blocking plate on the slit 31 remains effective. This fundamentally solves the problem of protection failure caused by thermal deformation of the fixed blocking structure, and significantly improves the reliability and process stability of the equipment under variable temperature conditions.

[0083] In one embodiment, as shown in FIG8, the driving component 9 includes a permanent magnet block 91 and a second coil 94; the permanent magnet block 91 is disposed in at least one of the first sub-blocking plate 41 and the second sub-blocking plate 42, specifically adapted to the number of the aforementioned driving components 9, which will not be described in detail here; the outer wall of the quartz tube is provided with a support groove 92 extending circumferentially along the quartz tube 1; a plurality of second coils 94 are provided, and the plurality of second coils 94 are arranged at intervals in the support groove 92 along the extension direction of the support groove 92, and an insulating layer 93 is provided between each second coil 94 and the support groove 92, and there is a potential difference between two adjacent second coils 94, so that when two adjacent second coils 94 are energized, a traveling wave magnetic field (the traveling wave magnetic field covers the permanent magnet block 91) is generated along the circumferential direction of the quartz tube 1, so as to control the permanent magnet block 91 to drive the first sub-blocking plate 41 and / or the second sub-blocking plate 42 to move towards each other or away from each other in the traveling wave magnetic field.

[0084] Specifically, when a plurality of second coils 94, arranged circumferentially within the support groove 92 along the quartz tube 1, are energized with alternating current of sequentially changing phase, the potential difference between adjacent second coils 94 generates a traveling wave magnetic field propagating circumferentially within the support groove 92. The permanent magnet block 91, fixed to the first sub-blocking plate 41 and / or the second sub-blocking plate 42, is subjected to the Lorentz force of this traveling wave magnetic field, the direction of which is determined by the direction of the traveling wave magnetic field. By controlling the current phase sequence of the second coils 94, the propagation direction of the traveling wave magnetic field can be changed, thereby driving the permanent magnet block 91 to move the connected first or second sub-blocking plate in a circumferential motion towards each other (reducing the overall axial width of the blocking plate) or away from each other (increasing the axial width), thus achieving adjustment of the axial width of the blocking plate.

[0085] In one embodiment, the driving component 9 can also be separately disposed on the second sub-blocking plate 42 to drive the second sub-blocking plate 42 to move toward or away from the first sub-blocking plate 41; at the same time, the first sub-blocking plate 41 and the second sub-blocking plate 42 can also be provided with the driving component 9 at the same time to realize bidirectional active adjustment, thereby further improving the flexibility, accuracy and response speed of the circumferential width adjustment of the blocking plate, and ensuring that it can quickly and accurately adapt to the thermal deformation of the slit 31 of the Faraday shielding cage 3 under different process conditions.

[0086] In other embodiments, the axial width of the blocking block can also be adjusted. For example, the blocking block includes a first sub-block, a second sub-block, a docking plate 7, and a driving component 9. The driving component 9 is connected to at least one of the first and second sub-blocks to drive the first and / or second sub-blocks to move in opposite directions or in opposite directions, thereby adjusting the circumferential width of the blocking block. The specific setting method and principle are the same as those for adjusting the circumferential width of the blocking plate, and will not be repeated here.

[0087] In one embodiment, as shown in FIG8, the driving component 9 further includes a sensor and a processor; the sensing end of the sensor faces the slit 31 to collect the circumferential width information of the slit 31; the processor is communicatively or electrically connected to the sensor and several second coils 94. After receiving the width signal of the slit 31 collected by the sensor, the processor controls the energization of several second coils 94 to generate the traveling wave magnetic field. This embodiment monitors the actual width change of the slit 31 in real time through the sensor and feeds the width signal back to the processor. The processor then precisely controls the energization state of each second coil 94 to generate an appropriate traveling wave magnetic field, thereby realizing closed-loop and dynamic adjustment of the width of the baffle plate. This ensures that its projection can always accurately cover the slit 31, which changes due to thermal expansion and contraction, fundamentally solving the problem of protection failure caused by thermal deformation of fixed structures, and improving the system's adaptability and protection reliability under different process temperatures.

[0088] In one embodiment, the sensor can be a laser displacement sensor, a capacitive displacement sensor, or an optical vision sensor. Its sensing end is precisely aligned with the slit 31 on the Faraday shield cage 3 to monitor the actual width change of the slit 31 under heat load in real time and non-contact, and transmit the collected width signal to the processor to provide accurate feedback data for the dynamic width adjustment of the baffle plate, thereby forming a closed-loop control system.

[0089] Specifically, taking a laser displacement sensor as an example, its working principle is as follows: the laser displacement sensor projects a laser beam onto the edge of the slit 31 on the Faraday shield cage 3 through a emitting lens. When the width of the slit 31 changes due to thermal load, its edge position will be displaced accordingly. The reflected laser beam is focused onto the photosensitive element through a receiving lens. By calculating the position offset of the laser spot on the detector, the actual width change of the slit 31 can be accurately calculated. This width signal is transmitted to the processor in real time. The processor dynamically adjusts the driving signal of the driving component 9 accordingly to control the adaptive adjustment of the axial width of the barrier plate.

[0090] In one embodiment, as shown in FIG8, the drive assembly 9 further includes a connecting rod 95 and a sliding block 96; at least one of the first sub-blocking plate 41 and the second sub-blocking plate 42 has a sliding groove 97 extending circumferentially along one side wall facing the quartz tube 1; the sliding block 96 is slidably disposed in the sliding groove 97; one end of the connecting rod 95 is connected to the sliding block 96, and the other end is connected to the quartz tube 1. This embodiment, through the cooperation of connecting rod 95, sliding block 96 and sliding groove 97, provides precise guidance and stable mechanical support for the circumferential movement of the first sub-blocking plate 41. The circumferential extension of sliding groove 97 ensures that the blocking plate can only move smoothly along a predetermined trajectory, effectively preventing it from deflecting or getting stuck during the adjustment process. At the same time, connecting rod 95 connects sliding block 96 to the outer wall of quartz tube, reliably transmitting the force generated by drive component 9 to the blocking plate, and using quartz tube as a stable force-bearing foundation, thereby achieving precise and controllable adjustment of the circumferential width of the blocking plate, while ensuring the long-term operational reliability and structural stability of the entire adjustment mechanism in the plasma environment.

[0091] In specific configurations, the combined structure of the connecting rod 95, sliding block 96, and sliding groove 97 can be configured as one set or two sets. When configured as one set, it can be connected to the second sub-blocking plate 42 or the first sub-blocking plate 41. When configured as two sets, it is connected to the second sub-blocking plate 42 and the first sub-blocking plate 41 respectively. This embodiment, by flexibly configuring the combined structure of the connecting rod 95, sliding block 96, and sliding groove 97 on the second sub-blocking plate 42 or simultaneously on the second sub-blocking plate 42 and the first sub-blocking plate 41, can provide a more balanced guiding and supporting force for the circumferential width adjustment of the blocking plate, avoiding deflection or jamming that may be caused by unilateral drive. Thus, when achieving bidirectional or symmetrical adjustment, it further improves the stability of the blocking plate movement, the rigidity of the overall structure, and the adaptive accuracy and reliability under different thermal deformation conditions.

[0092] In one embodiment, the end of the connecting rod 95 away from the sliding block 96 can be connected to both the quartz tube 1 and the snap-fit ​​protrusion 6, which will not be described in detail here.

[0093] In one embodiment, the blocking member 4 is spaced apart from the quartz tube, and the radial distance between the blocking member 4 and the quartz tube is greater than 0 mm and less than 2 mm. This embodiment maintains a small radial gap between the blocking member 4 and the quartz tube, which provides necessary deformation buffer space for the blocking member 4 due to thermal expansion, effectively preventing compressive stress on the quartz tube or deformation caused by hindered thermal expansion. Furthermore, by controlling this gap to a sufficiently small range, the possibility of plasma flowing around the gap and eroding the inner wall of the quartz tube is minimized, thus maintaining excellent protective effects while ensuring structural thermal stability.

[0094] In one embodiment, the circumferential width of the slit 31 is greater than 1 mm and less than 20 mm, and the axial height is greater than 5 cm and less than 30 cm; the circumferential width of the baffle plate is greater than 1.5 mm and less than 20.5 mm, and the axial height is greater than 2.5 cm and less than 15 cm; the axial height of the first coil 2 is greater than 2 cm and less than 14.5 cm. This embodiment ensures that the key dimensions (such as circumferential width and axial height) of the slit 31, the baffle plate, and the first coil 2 are within a mutually matching range, thus ensuring that the baffle plate can fully cover the slit 31 in projection to effectively block plasma bombardment. At the same time, its axial height is slightly smaller than that of the slit 31 but larger than that of the first coil 2, which ensures comprehensive protection and avoids excessive shielding of the alternating magnetic field. Therefore, while achieving reliable protection of the quartz tube, it maximizes the plasma excitation efficiency and process uniformity.

[0095] In one embodiment, the thickness of the baffle plate is greater than 1 mm and less than 10 mm. This embodiment limits the thickness of the baffle plate to a reasonable range of greater than 1 mm and less than 10 mm, ensuring that the baffle plate has sufficient structural strength and rigidity to effectively resist the long-term impact of plasma without easily deforming or being damaged. It also avoids excessive heat capacity, slow heating, or unnecessary obstruction of airflow in the reaction chamber due to excessive thickness. Thus, it ensures reliable protection while taking into account the rapid response of the process and the stability of the flow field in the chamber.

[0096] In one embodiment, the plasma processing equipment includes a reaction chamber for high-hydrogen processes, a process gas supply system, a vacuum system, and a radio frequency (RF) power supply. The process gas supply system is connected to a quartz tube 1 to supply process gas, including hydrogen-containing gas, into the quartz tube 1. The vacuum system is connected to the quartz tube 1 to extract gas from the quartz tube 1 and maintain the required vacuum level. The RF power supply is electrically connected to a first coil 2. This embodiment integrates the reaction chamber, which includes core structures such as a blocking element 4, with the process gas supply system, vacuum system, and RF power supply into a complete plasma processing equipment. This allows the equipment to not only efficiently generate plasma using hydrogen-containing gas in high-hydrogen processes but also maintain a stable reaction environment through the vacuum system. Furthermore, the RF power supply, in conjunction with the first coil 2, excites an alternating magnetic field. Simultaneously, the blocking element 4 within the reaction chamber fundamentally blocks hydrogen ions from bombarding the quartz tube. This achieves a unified system-level approach of efficient plasma processing and long-term protection of key components, significantly improving the overall process yield and operational reliability of the equipment when processing hydrogen-containing gases.

[0097] In one embodiment, the plasma processing equipment can be specifically configured as a deposition equipment, etching equipment, or photoresist removal equipment suitable for high-hydrogen processes. By integrating a reaction chamber containing core structures such as the blocking element 4, the equipment can not only efficiently excite uniform and stable plasma to complete processes such as deposition, etching, or photoresist removal on the wafer surface when processing hydrogen-containing process gases, but also effectively block the concentrated bombardment of hydrogen ions on the inner wall of the quartz tube, thereby significantly improving the long-term operational stability and process yield of the equipment in harsh high-hydrogen process environments.

[0098] While embodiments of the present invention have been described in detail above, it will be apparent to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations fall within the scope and spirit of the present invention. Furthermore, the present invention described herein may have other embodiments and can be implemented or carried out in various ways.

Claims

1. A reaction chamber for high-hydrogen processes, characterized in that, include: A quartz tube is located in the processing chamber; a first coil is arranged around the outside of the quartz tube and connected to an external radio frequency power supply to generate an alternating magnetic field that can enter the quartz tube and induce an eddy current electric field through the alternating magnetic field to accelerate the free electrons to collide with the process gas to generate plasma. A Faraday shielding cage is arranged around the quartz tube and between the quartz tube and the first coil. The Faraday shielding cage has several slits that penetrate its sidewalls and extend axially to allow the alternating magnetic field to enter the quartz tube through the slits. A blocking member is arranged inside the quartz tube, and the structure formed by the orthographic projection of the blocking member on the circumferential sidewall of the Faraday shielding cage covers the structure formed by the orthographic projection of the first coil on the circumferential sidewall of the Faraday shielding cage, so as to block the plasma from bombarding the inner wall of the quartz tube.

2. The reaction chamber for high-hydrogen processes according to claim 1, characterized in that, The blocking element includes a plurality of blocking plates, which are spaced apart along the circumference of the quartz tube. The structure formed by the orthographic projection of the blocking plates onto the circumferential sidewall of the Faraday shielding cage covers the slit.

3. The reaction chamber for high-hydrogen processes according to claim 2, characterized in that, The baffle plate includes a first sub-baffle plate, a second sub-baffle plate, a docking plate, and a driving assembly; either the first sub-baffle plate or the second sub-baffle plate is provided with the docking plate, the axial height of the docking plate being equal to the axial height of either the first or second sub-baffle plate; the other of the first and second sub-baffle plates is provided with a mounting groove adapted to the docking plate, the circumferential width of the mounting groove being greater than or equal to the circumferential width of the docking plate, and the docking plate being at least partially movably inserted into the mounting groove; the driving assembly is provided in at least one of the first and second sub-baffle plates to drive the first and / or second sub-baffle plates to move towards each other or away from each other, so as to adjust the circumferential width of the baffle plate by adjusting the circumferential width of the docking plate inserted into the mounting groove.

4. The reaction chamber for high-hydrogen processes according to claim 3, characterized in that, The driving assembly includes a permanent magnet block and a second coil; the permanent magnet block is disposed in at least one of the first sub-blocking plate and the second sub-blocking plate; the outer wall of the quartz tube is provided with a support groove extending circumferentially along the quartz tube; a plurality of second coils are provided, and the plurality of second coils are arranged at intervals in the support groove along the extension direction of the support groove, and an insulating layer is provided between each second coil and the support groove, and there is a potential difference between two adjacent second coils, so that when two adjacent second coils are energized, a traveling wave magnetic field is generated along the circumferential direction of the quartz tube, so as to control the permanent magnet block to drive the first sub-blocking plate and / or the second sub-blocking plate to move towards each other or away from each other in the traveling wave magnetic field.

5. The reaction chamber for high-hydrogen processes according to claim 4, characterized in that, The driving assembly further includes a sensor and a processor; the sensing end of the sensor is positioned towards the slit to collect the circumferential width information of the slit; the processor is connected to the sensor and a plurality of second coils, and the processor controls the plurality of second coils to be energized according to the circumferential width information of the slit to generate the traveling wave magnetic field.

6. The reaction chamber for high-hydrogen processes according to claim 4, characterized in that, The drive assembly further includes a connecting rod and a sliding block; at least one of the first sub-blocking plate and the second sub-blocking plate has a sliding groove extending circumferentially along one side wall facing the quartz tube; the sliding block is slidably disposed in the sliding groove; one end of the connecting rod is connected to the sliding block and the other end is connected to the quartz tube.

7. The reaction chamber for high-hydrogen processes according to claim 2, characterized in that, The first coil includes a plurality of annular segments spaced apart along the axial direction of the quartz tube, and a plurality of connecting segments disposed between adjacent annular segments and used to connect adjacent annular segments; the baffle plate includes a plurality of baffle blocks spaced apart along the axial direction of the quartz tube, and the structure formed by the orthographic projection of each baffle block on the circumferential sidewall of the Faraday shielding cage corresponds one-to-one with the structure formed by the orthographic projection of each annular segment and each connecting segment on the circumferential sidewall of the Faraday shielding cage.

8. The reaction chamber for high-hydrogen processes according to claim 7, characterized in that, The inner wall of the quartz tube is provided with a snap-fit ​​part, which extends along the axial direction of the quartz tube from the top to the bottom of the quartz tube; the side wall of the blocking block near the quartz tube is provided with a snap-fit ​​protrusion, which is movably inserted into the snap-fit ​​part to realize the installation of the blocking block and the quartz tube.

9. The reaction chamber for high-hydrogen processes according to claim 8, characterized in that, The snap-fit ​​portion is a snap-fit ​​groove recessed from the top end of the inner wall of the quartz tube towards the bottom end. The snap-fit ​​groove includes a first mounting groove extending circumferentially along the quartz tube and a second mounting groove extending radially along the quartz tube. The second mounting groove is connected to the first mounting groove, and the circumferential width of the second mounting groove is smaller than the circumferential width of the first mounting groove, so as to form a limiting structure to prevent the blocking block from radially disengaging from the quartz tube. The snap-fit ​​protrusion includes a protrusion adapted to the first mounting groove and a first connecting portion adapted to the second mounting groove. One end of the first connecting portion is fixedly disposed on the blocking block, and the other end is connected to the protrusion.

10. The reaction chamber for high-hydrogen processes according to claim 8, characterized in that, The snap-fit ​​part is a fixed boss fixedly disposed on the inner side wall of the quartz tube, and at least one circumferential side wall of the fixed boss is recessed inward with a limiting groove; the snap-fit ​​protrusion includes a second connecting part connected to the blocking block, and a limiting part inserted into the limiting groove along the axial direction of the quartz tube, so as to realize the installation of the blocking block and the quartz tube by the limiting part abutting against the groove side wall of the limiting groove.

11. The reaction chamber for high-hydrogen processes according to claim 8, characterized in that, The axial height of the latching protrusion is equal to the axial height of the blocking block, so that when two adjacent latching protrusions abut, two adjacent blocking blocks abut; or the axial height of the latching protrusion is greater than the axial height of the blocking block, so that when two adjacent latching protrusions abut, there is a gap between two adjacent blocking blocks.

12. The reaction chamber for high-hydrogen processes according to claim 1, characterized in that, The blocking member is spaced apart from the quartz tube, and the radial distance between the blocking member and the quartz tube is greater than 0 mm and less than 2 mm.

13. The reaction chamber for high-hydrogen processes according to claim 2, characterized in that, The slit has a circumferential width greater than 1 mm and less than 20 mm, and an axial height greater than 5 cm and less than 30 cm; the baffle has a circumferential width greater than 1.5 mm and less than 20.5 mm, and an axial height greater than 2.5 cm and less than 15 cm; the first coil has an axial height greater than 2 cm and less than 14.5 cm.

14. The reaction chamber for high-hydrogen processes according to claim 2, characterized in that, The thickness of the baffle plate is greater than 1 mm and less than 10 mm.

15. A plasma processing device, characterized in that, include: The reaction chamber for a high-hydrogen process as described in any one of claims 1 to 14; a process gas supply system, connected to a quartz tube, for supplying process gas, the process gas including hydrogen-containing gas, into the quartz tube; a vacuum system, connected to the quartz tube, for extracting gas from the quartz tube and maintaining the required vacuum level in the quartz tube; and a radio frequency power supply, electrically connected to a first coil.

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