Anodic bonding device and anodic bonding process
By designing a compact anodic bonding device and process, the problem of relative displacement between glass and silicon substrate caused by mechanical vibration was solved, achieving high-quality glass-silicon bonding and improving bonding stability and controllability.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-12-24
- Publication Date
- 2026-03-24
AI Technical Summary
In existing bonding devices, mechanical vibration causes relative displacement between the glass and the silicon substrate, resulting in a lack of rigid connection and affecting bonding quality.
The compact anodic bonding device, including the device frame, multiple vacuum electrodes and components, ensures uniform current distribution. The movement of the upper disk assembly is controlled by a transmission mechanism, and bonding is performed in a vacuum or inert gas environment. Combined with pretreatment and heating processes, the bonding stability and quality are improved.
Reduce external interference, improve the stability and controllability of the bonding process, ensure the stability of the silicon substrate grounding path, and improve bonding quality.
Smart Images
Figure CN121729004A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of electronic device manufacturing technology, specifically to an anode bonding device and an anode bonding process. Background Technology
[0002] Anodic bonding technology was first proposed in 1969. Its core principle is to achieve permanent bonding between glass and semiconductor materials with the assistance of an electric field. This technology was initially used for bonding silicon and glass, and has since been extended to metal-glass, ceramic-glass and other material systems, becoming a key process for microelectronic packaging, MEMS (microelectromechanical systems) and optoelectronic sensor manufacturing.
[0003] The existing technology still has the following drawbacks in its use: In the prior art, bonding devices are prone to problems due to mechanical vibration. Because the components are installed independently and lack rigid connections, mechanical vibration can be transmitted to the bonding chamber through air or structural gaps, causing relative displacement between the glass and the silicon substrate.
[0004] In view of this, we propose an anodic bonding device and an anodic bonding process to solve the existing problems. Summary of the Invention
[0005] The purpose of this invention is to provide an anodic bonding apparatus and an anodic bonding process to solve the problems mentioned in the background art.
[0006] To achieve the above objectives, the present invention provides the following technical solution: an anodic bonding device and an anodic bonding process, comprising a bonding chamber, an outer frame of the bonding chamber, a transmission mechanism at the upper end of the outer frame, an upper plate assembly at the lower end of the transmission mechanism, a lower plate assembly at the lower end of the outer frame, a first vacuum electrode and a second vacuum electrode at the upper end of the outer frame, a first switch connected to the upper end of the first vacuum electrode, a second switch connected downwards to the second vacuum electrode, and a third vacuum electrode at the lower end of the outer frame near the lower plate assembly, the third vacuum electrode being connected to a contact assembly and connected to the lower plate assembly via the contact assembly.
[0007] Preferably, a power supply is provided at the outer frame of the device, the negative terminal of the power supply is connected to the first switch and the second switch, and the positive terminal of the power supply is connected to the third vacuum electrode. Preferably, an opening is provided on one side of the outer frame of the device. S1: Provide a glass substrate and a silicon substrate to be bonded, wherein the glass substrate is borosilicate glass or soda-lime glass containing alkali metal ions, and the surface roughness Ra of the silicon substrate is ≤0.5nm; S2: Pre-processing the glass substrate and silicon substrate, including: A. Chemical cleaning is used to remove surface organic matter and particulate contaminants; B. Etching the natural oxide layer on the surface of the silicon substrate using hydrofluoric acid solution; C. Plasma activation treatment is performed on the bonding interface between the glass substrate and the silicon substrate; S3: Align the pretreated glass substrate with the silicon substrate and place them in the bonding jig, applying a vertical pressure of 10–100 kPa. S4: In a vacuum or inert gas environment, apply a DC voltage of 200–1200V between the glass substrate and the silicon substrate, and heat to the bonding temperature of 300–500℃ at a heating rate of 50–500℃ / min, and hold the bonding time for 1–10 minutes. S5: After bonding is completed, cool to room temperature at a cooling rate of 5–20℃ / min to obtain a glass-silicon composite structure with a bonding strength ≥20MPa.
[0008] Compared with the prior art, the beneficial effects of the present invention are: This invention reduces external interference and improves the stability of the bonding process by using a device frame and multiple components to form a compact structure. Furthermore, the connection between the third vacuum electrode and the lower disk assembly ensures the stability of the silicon substrate grounding path and reduces the impact of contact resistance fluctuations on the bonding current, thereby improving the controllability of bonding quality. Attached Figure Description
[0009] Figure 1 This is a front view structural diagram of the present invention.
[0010] In the figure: 1. Bonding chamber; 2. Device frame; 3. Upper plate assembly; 4. Second vacuum electrode; 5. First switch; 6. First vacuum electrode; 7. Second switch; 8. Transmission mechanism; 9. Opening; 10. Lower plate assembly; 11. Contact assembly; 12. Third vacuum electrode; 13. Power supply. Detailed Implementation
[0011] The technical solution of the present invention will be further described below with reference to the accompanying drawings and specific embodiments.
[0012] Example 1: As Figure 1As shown, the present invention proposes an anodic bonding device and anodic bonding process, including a bonding chamber to reduce the contamination of the bonding interface by metal ion migration at high temperatures. An outer frame is provided outside the bonding chamber to prevent burns to operators. A transmission mechanism is provided at the upper end of the outer frame to control the downward movement of the upper plate assembly. The upper plate assembly is located at the lower end of the transmission mechanism, and a lower plate assembly is located at the lower end of the outer frame. A first vacuum electrode and a second vacuum electrode are provided at the upper end of the outer frame. A first switch is connected to the upper end of the first vacuum electrode, and a second switch is connected downwards to the second vacuum electrode. The first vacuum electrode is connected to the first switch via a copper busbar, and the second vacuum electrode is connected to the second switch via the same copper busbar. A third vacuum electrode is provided at the lower end of the device frame near the lower plate assembly. The third vacuum electrode is connected to the lower plate assembly via a contact component to ensure uniform current distribution. The third vacuum electrode is connected to the contact component and is also connected to the lower plate assembly via the contact component.
[0013] Preferably, a power supply is provided at the outer frame of the device. The negative terminal of the power supply is connected to the first switch and the second switch, the positive terminal of the power supply is connected to the third vacuum electrode, the negative terminal of the power supply is connected to the first switch and the second switch through a copper busbar, and the positive terminal of the power supply is connected to the third vacuum electrode.
[0014] Preferably, an opening is provided on one side of the outer frame of the device to facilitate the inward conveying of materials, and the opening is provided with a quartz glass observation window to facilitate real-time observation of the bonding process.
[0015] S1: Provide a glass substrate and a silicon substrate to be bonded, wherein the glass substrate is borosilicate glass or soda-lime glass containing alkali metal ions, and the surface roughness Ra of the silicon substrate is ≤0.5nm; S2: Pre-processing the glass substrate and silicon substrate, including: A. Chemical cleaning is used to remove surface organic matter and particulate contaminants; B. Etching the natural oxide layer on the surface of the silicon substrate using hydrofluoric acid solution; C. Plasma activation treatment is performed on the bonding interface between the glass substrate and the silicon substrate; S3: Align the pretreated glass substrate with the silicon substrate and place them in the bonding jig, applying a vertical pressure of 10–100 kPa. S4: In a vacuum or inert gas environment, apply a DC voltage of 200–1200V between the glass substrate and the silicon substrate, and heat to the bonding temperature of 300–500℃ at a heating rate of 50–500℃ / min, and hold the bonding time for 1–10 minutes. S5: After bonding is completed, cool to room temperature at a cooling rate of 5–20℃ / min to obtain a glass-silicon composite structure with a bonding strength ≥20MPa.
[0016] The above specific embodiments are merely several preferred embodiments of the present invention. Based on the technical solutions of the present invention and the relevant teachings of the above embodiments, those skilled in the art can make various alternative improvements and combinations to the above specific embodiments.
Claims
1. An anodic bonding apparatus, comprising a bonding chamber (1), characterized in that: The bonding chamber (1) is provided with a device frame (2) outside. A transmission mechanism (8) is provided at the upper end of the device frame (2). An upper plate assembly (3) is provided at the lower end of the transmission mechanism (8). A lower plate assembly (10) is provided at the lower end of the device frame (2). A first vacuum electrode (6) and a second vacuum electrode (4) are provided at the upper end of the device frame (2). A first switch (5) is connected to the upper end of the first vacuum electrode (6). A second switch (7) is connected to the lower end of the second vacuum electrode (4). A third vacuum electrode (12) is provided at the lower end of the device frame on the side close to the lower plate assembly (10). The third vacuum electrode (12) is connected to a contact assembly (11), and the third vacuum electrode (12) is connected to the lower plate assembly (10) through the contact assembly (11).
2. The anodic bonding device according to claim 1, characterized in that: A power supply (13) is provided at the outer frame (2) of the device. The negative terminal of the power supply (13) is connected to the first switch (5) and the second switch (7), and the positive terminal of the power supply (13) is connected to the third vacuum electrode (12).
3. The anodic bonding apparatus according to claim 1, characterized in that: An opening (9) is provided on one side of the outer frame (2) of the device.
4. An anodic bonding process according to any one of claims 1-3, characterized in that: S1: Provide a glass substrate and a silicon substrate to be bonded, wherein the glass substrate is borosilicate glass or soda-lime glass containing alkali metal ions, and the surface roughness Ra of the silicon substrate is ≤0.5nm; S2: Pre-processing the glass substrate and silicon substrate, including: A. Chemical cleaning is used to remove surface organic matter and particulate contaminants; B. Etching the natural oxide layer on the surface of the silicon substrate using hydrofluoric acid solution; C. Plasma activation treatment is performed on the bonding interface between the glass substrate and the silicon substrate; S3: Align the pretreated glass substrate with the silicon substrate and place them in the bonding jig, applying a vertical pressure of 10–100 kPa. S4: In a vacuum or inert gas environment, apply a DC voltage of 200–1200V between the glass substrate and the silicon substrate, and heat to the bonding temperature of 300–500℃ at a heating rate of 50–500℃ / min, and hold the bonding time for 1–10 minutes. S5: After bonding is completed, cool to room temperature at a cooling rate of 5–20℃ / min to obtain a glass-silicon composite structure with a bonding strength ≥20MPa.