Electronic component and electronic equipment

Abstract

The invention discloses an electronic component and electronic equipment, and the electronic component is provided with a bonding layer on the outer surface of a device main body, and forms a second region with the bonding layer at the joint of a terminal and the device main body. According to the electronic component disclosed by the invention, the second area is arranged at the joint of the terminal and the device main body, so that the terminal and the device main body can form tight connection, and separation of the joint of the terminal and the device main body caused by long-term work of the electronic component in a high-temperature and high-humidity environment can be effectively avoided; and the situation that the electronic component fails due to the fact that water enters the electronic component is prevented.

Description

Technical Field

[0001] This application relates to the field of electronic components technology, and in particular to an electronic component and an electronic device. Background Technology

[0002] Currently, some electronic devices may operate in high-temperature and high-humidity environments. For example, in tropical regions, mobile phones, computers, electronic instruments, and other electronic devices are often exposed to high temperatures and humidity for extended periods. Prolonged exposure to such environments can cause external moisture to enter components such as resistors and inductors, potentially leading to their failure. Taking resistors as an example, in high-temperature and high-humidity environments, moisture may enter through the resistor's terminals, potentially causing it to malfunction. Summary of the Invention

[0003] This application discloses an electronic component and an electronic device for improving the connection stability between the upper terminal of the electronic component and the main body of the component.

[0004] To achieve the above objectives, in a first aspect, this application discloses an electronic component, comprising: Device body, the device body comprising: bottom surface; The top surface and the bottom surface are disposed opposite each other along the thickness direction of the main body of the device; Two first end faces are disposed opposite to each other along a first direction; Two second end faces are disposed opposite to each other along a second direction; Terminals are disposed on the device body to cover one or more of the bottom surface, the top surface, the first end surface, and the second end surface; A bonding layer is disposed on the device body to cover one or more of the bottom surface, the top surface, the first end surface, and the second end surface; The bonding layer extends toward the terminal, and the bonding layer includes a first region and a second region. The second region is disposed near the connection between the terminal and the device body, and the silver content of the second region is greater than that of the first region. Both the first direction and the second direction intersect with the thickness direction of the device body.

[0005] The electronic component of this application comprises a bonding layer on the outer surface of the component body. This bonding layer extends towards the terminals of the electronic component, creating a second region on the side of the bonding layer adjacent to the terminals. The second region has a higher silver content than the first region, resulting in a denser structure and better stability and moisture protection compared to the first region. Because the second region is located near the connection between the terminals and the component body, the protection at this connection is enhanced. This effectively prevents the connection between the terminals and the component body from separating during prolonged operation in high-temperature and high-humidity environments, preventing water ingress and improving the connection stability between the terminals and the component body.

[0006] As some alternative implementations, the silver content on the side of the second region adjacent to the terminal is greater than the silver content on the side of the second region away from the terminal.

[0007] When setting the silver content of the second region, the silver content on the side adjacent to the terminal is relatively higher. This can make the protection effect of the part of the second region adjacent to the terminal better, and can further improve the protection effect of the second region at the connection between the terminal and the device body, preventing electronic components from failing.

[0008] As some alternative implementations, the porosity of the second region is less than that of the first region.

[0009] Because the silver content in the second region is higher than that in the first region, the second region is also more dense during its formation. Furthermore, the porosity of the second region is lower than that of the first region, making it more stable and providing better protection against moisture. In other words, the relatively lower porosity of the second region ensures a stable connection between the device body and the terminals, preventing moisture from entering the connection point and thus preventing electronic component failure.

[0010] As some optional implementations, the two terminals are respectively disposed on the bottom surface near the first end surface, the bonding layer is located between the two terminals along the first direction, the second region extends along the first direction, the size of the second region is L1, the size of the device body is L2, and the size of the first region is L3, satisfying: 0.01 < L1 / L2 < 0.1; and / or, The condition is satisfied: 0.67 < L3 / L2 < 0.99.

[0011] This application controls the ratio of the extended dimension of the second region to the size of the device body between 0.01 and 0.1. On the one hand, this avoids an excessively small L1 / L2 ratio. If L1 / L2 is less than 0.01, the coverage of the second region at the connection between the terminal and the device body is small, which may make it difficult to effectively seal the gap between the terminal and the device body, affecting the stability of the connection between the terminal and the device body. On the other hand, it avoids an excessively large L1 / L2 ratio. If L1 / L2 is greater than 0.1, that is, the area occupied by the second region on the device body is large, which may affect the overall appearance of the electronic component. Therefore, controlling the ratio of the size of the second region to the size of the device body between 0.01 and 0.1 not only provides a good protective effect at the connection between the terminal and the device body but also maintains a good appearance for the electronic component.

[0012] In addition, when the ratio of the extension dimension of the first region to the dimension of the device body is controlled between 0.67 and 0.99, the first region occupies a large area on the surface of the device body, which can effectively improve the appearance of the device body.

[0013] As some alternative implementations, the extension dimension L1 of the second region satisfies: 5μm≤L1≤500μm.

[0014] This application controls the size of L1 within the range of 5μm-500μm. On the one hand, it avoids L1 being too small. If L1 is smaller than 5μm, the size of the second region at the connection between the terminal and the device body is small, resulting in poor protection against gaps between the terminal and the device body, which is detrimental to improving the connection stability between the terminal and the device body. On the other hand, it avoids L1 being too large. Since the porosity of the second region is relatively small, its appearance is inconsistent with that of the first region. If the size of the second region is large, it may affect the appearance of the electronic component. Therefore, this application controls the size of L1 within the range of 5μm-500μm, which not only ensures the protective effect of the second region against gaps between the terminal and the device body but also ensures the appearance of the electronic component.

[0015] As some alternative implementations, the silver content in the second region is 5%-40%.

[0016] This application controls the silver content in the second region to be between 5% and 40%. On one hand, it avoids the silver content in the second region falling below 5%, as this could affect the density and stability of the second region at the gap between the terminal and the device body, potentially causing protective failure. On the other hand, it avoids the silver content in the second region exceeding 40%, as this could cause some plating to extend into the second region during terminal electroplating, affecting the appearance of the electronic component. Therefore, controlling the silver content in the second region to 5%-40% not only ensures the protective effect of the second region but also prevents plating creep during terminal electroplating.

[0017] As some alternative implementations, the silver content in the second region is α, and the silver content in the first region is β, satisfying: 2 < α / β < 20.

[0018] This application controls the ratio of silver content in the second region to silver content in the first region to be between 2 and 20. This means the silver content in the first region is relatively low. Maintaining a low silver content in the first region is crucial; if the silver content is high, the first region might form an electrical connection with the substrate during the connection of electronic components, potentially causing a short circuit. Therefore, controlling the silver content in the first region in this application prevents short circuits during electrical connections.

[0019] As some alternative implementations, the material in the second region may also include at least a variety of oxides and / or phosphides formed from bismuth, cobalt, cadmium, carbon, oxygen, calcium, zinc, phosphorus, and copper.

[0020] This application forms a second region by combining a bonding layer containing elements such as bismuth, cobalt, cadmium, carbon, oxygen, calcium, zinc, phosphorus, copper, and silver with some terminals. When electronic components are in a high-temperature and high-humidity environment, this gives the electronic components better resistance to high temperature and high humidity, which is beneficial to meeting the industrial-grade standard humidity and heat load requirements of 85°C and 85% humidity or higher.

[0021] As some alternative implementations, the silver content in the second region is α, and the phosphorus content in the second region is γ, satisfying: 20% < α / γ < 80%; and / or, The bismuth content in the second region is δ, satisfying: 0.5% < α / δ < 5%; and / or, The zinc content in the second region is θ, which satisfies: 10% < α / θ < 80%. This application controls the ratios of phosphorus, bismuth, and zinc to silver in the second region within a specific range. Controlling the silver-to-phosphorus ratio ensures good surface insulation and a dense, compact enclosure of the device body, meeting product performance standards. Controlling the silver-to-bismuth ratio in the second region helps lower its melting point, resulting in better density after solidification without significantly impacting performance. Furthermore, the zinc component in the second region is identical to the main component of the device body, promoting better bonding between the second region and the device body and improving the reliability of the electronic component.

[0022] Secondly, this application also discloses an electronic device, comprising: Electronic components as described in the first aspect.

[0023] In the electronic device disclosed in this application, a bonding layer is formed on the outer surface of the electronic component's body, and a second region with a high silver content is formed at the connection between the terminal and the component body. This allows for a tight connection between the terminal and the component body, enhancing the protective effect of the bonding layer on the terminal. It effectively prevents the connection between the terminal and the component body from separating due to prolonged operation in high-temperature and high-humidity environments, preventing water ingress and improving the connection stability between the terminal and the component body. Furthermore, when the electronic component is connected to the substrate, the connection stability between the electronic component and the substrate remains stable even in high-temperature and high-humidity environments, and the electronic component itself exhibits good stability, preventing failure in such environments. In other words, the electronic device also benefits from stable operation in high-temperature and high-humidity environments.

[0024] Compared with the prior art, the beneficial effects of this application are as follows: The electronic component of this application comprises a bonding layer on the outer surface of the component body. This bonding layer extends towards the terminals of the electronic component, creating a second region on the side of the bonding layer adjacent to the terminals. The second region has a higher silver content than the first region, resulting in a lower melting point. During low-temperature melting, silver from the terminals more easily penetrates into the second region. After melting and solidification, the second region exhibits higher density, leading to better stability and moisture protection compared to the first region. Because the second region is located near the connection between the terminals and the component body, the protection at this connection is enhanced. This effectively prevents separation of the connection between the terminals and the component body during prolonged operation in high-temperature and high-humidity environments, preventing water ingress and improving the connection stability between the terminals and the component body. Attached Figure Description

[0025] To more clearly illustrate the technical solutions in the embodiments of this application, the drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0026] Figure 1 This is a microscopic schematic diagram of an existing electronic component; Figure 2 This is a schematic diagram of the structure of an electronic component disclosed in an embodiment of this application; Figure 3 This is another structural schematic diagram of the electronic component disclosed in the embodiments of this application; Figure 4 This is another structural schematic diagram of the electronic component disclosed in the embodiments of this application; Figure 5 This is a microscopic schematic diagram of the electronic components disclosed in the embodiments of this application; Figure 6 This is an internal schematic diagram of an electronic component disclosed in an embodiment of this application; Figure 7 This is another internal schematic diagram of the electronic components disclosed in the embodiments of this application; Figure 8 This is yet another internal schematic diagram of the electronic component disclosed in the embodiments of this application; Figure 9 This is a schematic diagram of the structure of the electronic device disclosed in the embodiments of this application; Figure 10 This is a flowchart of the method for fabricating electronic components disclosed in the embodiments of this application. Explanation of reference numerals in the attached figures: 100. Electronic components; 1. Component body; 1a. Bottom surface; 1b. Top surface; 1c. First end surface; 1d. Second end surface; 2. Terminal; 3. Bonding layer; 31. First region; 32. Second region; 200. Electronic equipment; 201. Equipment body; 202. Substrate. Detailed Implementation

[0027] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0028] In this application, the terms "upper," "lower," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. These terms are primarily for the purpose of better describing this application and its embodiments, and are not intended to limit the indicated device, element, or component to having a specific orientation, or to be constructed and operated in a specific orientation.

[0029] Furthermore, in addition to indicating location or positional relationship, some of the aforementioned terms may also have other meanings. For example, the term "above" may also be used in some cases to indicate a certain dependency or connection relationship. Those skilled in the art can understand the specific meaning of these terms in this application based on the specific circumstances.

[0030] Furthermore, the terms "installation," "setup," "equipped with," and "connection" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral structure; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium, or an internal connection between two devices, components, or parts. Those skilled in the art can understand the specific meaning of these terms in this application based on the specific circumstances.

[0031] Furthermore, the terms "first," "second," etc., are primarily used to distinguish different devices, components, or parts (which may be the same or different in specific type and construction), and are not intended to indicate or imply the relative importance or quantity of the indicated devices, components, or parts. Unless otherwise stated, "a plurality of" means two or more.

[0032] Currently, some electronic devices may be located in high-temperature and high-humidity environments (such as high-temperature and high-humidity workshops or agricultural greenhouses). For example, in tropical regions, mobile phones, computers, electronic instruments, and other electronic devices are often exposed to high-temperature and high-humidity environments for extended periods. Prolonged exposure to such environments can cause external moisture to enter components such as resistors and inductors, potentially leading to their failure. Taking electronic components as an example, in high-temperature and high-humidity environments, moisture may enter through the connection points between the terminals and the component body, potentially causing component failure. Please see [link to relevant documentation]. Figure 1 As shown in the example, as indicated by the arrow, there is a noticeable gap at the connection between the terminal and the device body.

[0033] In response, this application discloses an electronic component, an electronic device, and a method for manufacturing the electronic component. A bonding layer is formed on the surface of the device body, and a second region is formed near the connection between the bonding layer and the terminal and the device body. This protects the connection between the terminal and the device body, improves the connection stability between the terminal and the device body, and prevents moisture from entering the device body from the terminal, which could cause the electronic component to fail.

[0034] The technical solution of this application will be further described below with reference to the embodiments and accompanying drawings.

[0035] Firstly, please see Figure 1 and Figure 2 This application discloses an electronic component 100. When the electronic component 100 is connected to a substrate, the side of the component body 1 adjacent to the substrate is the bottom surface 1a, and the opposite side is the top surface 1b. The direction from the bottom surface 1a to the top surface 1b is the thickness direction of the component body 1. The component body 1 also includes two opposing first end surfaces 1c along a first direction and two opposing second end surfaces 1d along a second direction. Both the first and second directions are orthogonal to the thickness direction of the component body 1.

[0036] like Figure 1 As shown in the example, the first direction can be the length direction of the device body 1, and the second direction can be the width direction of the device body 1. The direction indicated by X is the first direction, the direction indicated by Y is the second direction, and the direction indicated by Z is the thickness direction of the device body 1.

[0037] In some embodiments, the electronic component 100 includes a device body 1, a terminal 2, and a bonding layer 3. The terminal 2 is disposed on the device body 1 to cover one or more of a bottom surface 1a, a top surface 1b, a first end surface 1c, and a second end surface 1d. The bonding layer 3 is disposed on the device body 1 to cover one or more of the bottom surface 1a, top surface 1b, first end surface 1c, and second end surface 1d. The bonding layer 3 extends toward the terminal 2 and includes a first region 31 and a second region 32. The second region 32 is disposed near the connection between the terminal 2 and the device body 1, and the silver content of the second region 32 is greater than the silver content of the first region 31.

[0038] The electronic component 100 of this application has a bonding layer 3 on the outer surface of the component body 1. The bonding layer 3 extends towards the terminal 2 of the electronic component 100, forming a second region 32 on the side of the bonding layer 3 adjacent to the terminal 2. The silver content in the second region 32 is greater than that in the first region 31, resulting in a lower melting point. When the second region 32 melts at low temperatures, the silver from the terminal more easily penetrates into the second region 32. After melting, the crystallized structure of the second region 32 has higher density, leading to better stability and moisture protection compared to the first region 31. Since the second region 32 is located near the connection between the terminal 2 and the component body 1, the protection at the connection point is improved. This effectively prevents the electronic component 100 from separating from the connection point due to prolonged operation in high-temperature and high-humidity environments, preventing water ingress into the electronic component 100 and thus improving the connection stability between the terminal 2 and the component body 1.

[0039] Optionally, the device body 1 can be a cube, cylinder, oblate spheroid, etc., and the material of the device body 1 can be ceramic. To better understand the solution of this application, a cube as the device body 1 will be used as an example for explanation.

[0040] Optionally, there may be two terminals 2, one of which may be a positive terminal and the other a negative terminal. The two terminals 2 may be respectively disposed on the two first end faces 1c or disposed on the two second end faces 1d and partially extend to the bottom surface 1a of the device body 1, so that the terminals 2 can be connected to the substrate.

[0041] It is understood that the terminal 2 may include a “C” type terminal 2, an “L” type terminal 2, and a “I” type terminal 2.

[0042] For example, the "C" type terminal 2 is as follows Figure 2 As shown in the example, the "L"-shaped terminal 2 is fully enclosed at the end of the device body 1. Figure 3 As shown in the example, the terminal 2 is partially disposed at the end of the device body 1 and partially disposed on the bottom surface 1a of the device body 1. Figure 4 As shown in the example, near the end of the device body 1, a "I"-shaped terminal 2 is provided on the bottom surface 1a of the device body 1.

[0043] Since terminal 2 is mainly used to electrically connect the device body 1 to the substrate, terminal 2 is usually made of conductive material. For example, the material in terminal 2 may include silver, tin, etc.

[0044] In some embodiments, the bonding layer 3 may be formed only on the surface of the device body 1 where the terminal 2 is located. For example, when the terminal 2 is a "C"-shaped terminal 2, the portion of the "C"-shaped terminal 2 extends to the top surface 1b, bottom surface 1a, and two second end surfaces 1d of the device body 1. The bonding layer 3 may be provided on the top surface 1b, bottom surface 1a, and two second end surfaces 1d of the device body 1. Correspondingly, a second region 32 is also formed on the top surface 1b, bottom surface 1a, and two second end surfaces 1d of the device body 1.

[0045] In other embodiments, the bonding layer 3 can be formed on all surfaces of the device body 1. That is, the bonding layer 3 is provided on all surfaces of the device body 1, and the bonding layer 3 can protect the surface of the device body 1, thereby improving the protective effect of the bonding layer 3 on the device body 1.

[0046] Optionally, the material of the bonding layer 3 may include oxides and / or phosphides formed from various of bismuth, cobalt, cadmium, carbon, oxygen, calcium, zinc, phosphorus, copper, and silver. Specifically, the material of the bonding layer 3 may include bismuth dioxide, cobalt trioxide, zinc oxide, calcium phosphide, etc.

[0047] In some embodiments, the silver content of the second region 32 on the side adjacent to terminal 2 is greater than the silver content of the second region 32 on the side away from terminal 2.

[0048] For example, when setting the silver content of the second region 32, the silver content on the side adjacent to the terminal 2 is relatively high. This can make the protection effect of the part of the second region 32 adjacent to the terminal 2 better, and can further improve the protection effect of the second region 32 at the connection between the terminal 2 and the device body 1, and prevent the electronic component 100 from failing.

[0049] In some embodiments, the bonding layer 3 can be formed on the surface of the device body 1 by immersion or spraying a surface treatment liquid. The surface treatment liquid may include oxides and / or phosphides formed from various elements such as bismuth, cobalt, cadmium, carbon, oxygen, calcium, zinc, phosphorus, copper, and silver. For example, the surface treatment liquid may include bismuth dioxide, cobalt trioxide, calcium phosphide, etc.

[0050] In some embodiments, the porosity of the second region 32 is less than that of the first region 31. It is understood that since the second region 32 is formed through the bonding layer 3, its material composition primarily includes the material of the bonding layer 3. For example, the bonding layer 3 is formed through surface treatment, where bismuth dioxide, cobalt trioxide, zinc oxide, calcium phosphide, etc., generate more pores. Silver is then further incorporated into the bonding layer 3 to form the second region 32. Therefore, if the first region 31 is not treated with silver, the porosity of the second region 32 is less than that of the first region 31.

[0051] like Figure 5 As shown in the example, the porosity of the second region 32 is smaller than that of the first region 31 and there are no obvious pores. The porosity of the second region 32 is close to 0%, which can stably connect the device body 1 and the terminal 2, prevent moisture from entering the connection between the terminal 2 and the device body 1, and prevent the electronic component 100 from failing.

[0052] It is understandable that the porosity of the second region 32 and the first region 31 can be obtained by polishing the second region 32 and the first region 31 with sandpaper of a certain grit, then taking pictures of the second region 32 and the first region 31 with a microscope, and then calculating the porosity of the second region 32 and the first region 31 respectively using a machine vision algorithm.

[0053] In some embodiments, the material of the second region 32 includes silver, and the silver content in the second region 32 may be 5%-40%.

[0054] It is understandable that the main component of terminal 2 includes silver. When terminal 2 extends towards bonding layer 3, some of the silver in terminal 2 flows to bonding layer 3 and bonds with bonding layer 3 to form second region 32. That is to say, the silver content in second region 32 can be controlled by the amount of silver flowing from terminal 2 to second region 32. Of course, the silver in second region 32 can be controlled by additionally coating silver in second region 32.

[0055] For example, the silver content in the second region 32 can be 5%-10%, 10%-15%, 15%-20%, 20%-25%, 25%-30%, 30%-35%, 35%-40%, etc. For instance, the silver content in the second region 32 can be 5%, 7%, 10%, 13%, 15%, 17%, 20%, 23%, 25%, 27%, 30%, 33%, 35%, 37%, 40%, 43%, 45%, 47%, or 50%, etc.

[0056] This application controls the silver content of the second region 32 to be between 5% and 40%. On the one hand, it avoids the silver content in the second region 32 falling below 5%, as this could affect the density of the second region 32 and its stability at the gap between the terminal 2 and the device body 1, potentially causing the second region 32 to fail protectively. On the other hand, it avoids the silver content in the second region 32 exceeding 40%, as this could cause some plating to extend into the second region 32 during electroplating of the terminal 2, affecting the appearance of the electronic component 100. Therefore, controlling the silver content of the second region 32 to 5%-40% not only ensures the protective effect of the second region 32 but also prevents plating creep in the second region 32 during electroplating of the terminal 2.

[0057] In some embodiments, the silver content in the second region 32 is α, and the silver content in the second region 32 is β, satisfying: 2<α / β<20.

[0058] For example, α / β can be 2-5, 5-10, 10-15, 15-20, etc. For instance, α / β can be 3, 5, 8, 10, 13, 15, or 18, etc.

[0059] This application controls the ratio of silver content in the second region 32 to silver content in the first region 31 to be between 2 and 20. This means the silver content in the first region 31 is relatively low. Maintaining a low silver content in the first region 31 is crucial. If the silver content in the first region 31 is high, it may form an electrical connection with the substrate when the electronic component 100 is connected to it, potentially causing a short circuit in the electronic component 100. Therefore, controlling the silver content in the first region 31 in this application can prevent short circuits in the electronic component 100 during electrical connections.

[0060] In some embodiments, the material of the second region 32 further includes at least a variety of oxides and / or phosphides formed from bismuth, cobalt, cadmium, carbon, oxygen, calcium, zinc, phosphorus, and copper.

[0061] For example, the bonding layer 3 is formed on the surface of the device body 1 by immersion or spraying a surface treatment liquid. The surface treatment liquid may include oxides and / or phosphides formed from various elements such as bismuth, cobalt, cadmium, carbon, oxygen, calcium, zinc, phosphorus, copper, and silver. For example, when the bonding layer 3 is bonded to a portion of the terminal 2, elements such as bismuth, cobalt, cadmium, carbon, oxygen, calcium, zinc, phosphorus, copper, and silver in the bonding layer 3 may also partially bond with the terminal 2 to form a second region 32. For example, the surface treatment liquid may include bismuth dioxide, cobalt trioxide, calcium phosphide, etc.

[0062] This application, by setting a bonding layer 3 containing elements such as bismuth, cobalt, cadmium, carbon, oxygen, calcium, zinc, phosphorus, copper, and silver, and forming a second region 32 by additionally doping with silver, enables the electronic component 100 to have better resistance to high temperature and high humidity when it is in a high temperature and high humidity environment. This is beneficial to meeting the industrial standard humidity and heat load requirements of the electronic component 100 at 85°C and 85% humidity, or even higher humidity and heat load requirements.

[0063] In some embodiments, the silver content in the second region 32 is α, and the phosphorus content in the second region of the second region 32 is γ, satisfying: 20% < α / γ < 80%.

[0064] For example, α / γ can be 20%-40%, 40%-60%, 60%-80%, etc. α / γ can also be 25%, 40%, 50%, 60%, 70%, or 75%, etc.

[0065] In the second region 32, this application controls the ratio of silver to phosphorus content to ensure good insulation of the surface of the device body 1 and that the device body 1 is tightly encapsulated to meet product performance standards.

[0066] In some embodiments, the bismuth content in the second region 32 is δ, satisfying: 0.5% < α / δ < 5%.

[0067] For example, α / δ can be 0.5%-1.5%, 1.5%-2.5%, 2.5%-3.5%, 3.5%-5%, etc. For instance, α / δ can be 1%, 1.5%, 2%, 2.5%, 3%, 3.5%, 4%, or 4.5%, etc.

[0068] In the second region 32, this application controls the ratio of silver to bismuth, which helps to lower the melting point of the second region 32, resulting in better density after melting and solidification, without significantly affecting performance.

[0069] In some embodiments, the zinc content in the second region 32 is θ, satisfying: 10% < α / θ < 80%.

[0070] For example, α / θ can be 10%-20%, 20%-30%, 30%-40%, 40%-50%, 50%-60%, 60%-70%, 70%-80%, etc. Alternatively, α / θ can be 15%, 20%, 25%, 30%, 35%, 40%, 45%, 50%, 55%, 60%, 65%, 70%, or 75%, etc.

[0071] In this application, the zinc composition of the second region 32 is the same as that of the main component of the device body 1, which helps the second region 32 to bond better with the device body 1 and improves the reliability of the electronic component 100 product.

[0072] Please see Figures 6 to 8 In some embodiments, the two ends 2 are respectively disposed on the side of the bottom surface 1a adjacent to the first end surface 1c, the bonding layer 3 is located between the two ends 2 along the first direction, the second region 32 extends along the first direction, the size of the second region 32 is L1 along the first direction, the size of the device body 1 is L2, and the condition is satisfied that: 0.01 < L1 / L2 < 0.1.

[0073] For example, L1 / L2 can be 0.01-0.04, 0.04-0.06, 0.06-0.08, 0.08-0.1, etc. For instance, L1 / L2 can be 0.02, 0.03, 0.04, 0.05, 0.06, 0.07, 0.08, or 0.09, etc.

[0074] This application controls the ratio of the extended dimension of the second region 32 to the dimension of the device body 1 between 0.01 and 0.1. On the one hand, this avoids an excessively small L1 / L2 ratio. If L1 / L2 is less than 0.01, the coverage of the second region 32 at the connection between the terminal 2 and the device body 1 will be small, potentially making it difficult to effectively seal the gap between the terminal 2 and the device body 1, thus affecting the stability of the connection between the terminal 2 and the device body 1. On the other hand, it avoids an excessively large L1 / L2 ratio. If L1 / L2 is greater than 0.1, that is, the area occupied by the second region 32 on the device body 1 will be large, potentially affecting the overall appearance of the electronic component 100. Therefore, controlling the ratio of the size of the second region 32 to the size of the device body 1 between 0.01 and 0.1 not only provides better protection at the connection between the terminal 2 and the device body 1 but also maintains a good appearance for the electronic component 100.

[0075] For example, such as Figure 6 As shown in the example, when terminal 2 is a "C" type terminal 2, the second region 32 extends along the first direction. That is, the second region 32 extends along the first direction on the bottom surface 1a, thereby forming a certain area of ​​the second region 32.

[0076] In some embodiments, the extension dimension L1 of the second region 32 satisfies: 5μm≤L1≤500μm.

[0077] For example, L1 can be 5μm-50μm, 50μm-100μm, 100μm-150μm, 150μm-200μm, 200μm-250μm, 250μm-300μm, 300μm-350μm, 350μm-400μm, 400μm-450μm, 450μm-500μm, etc. For example, L1 can be 5μm, 25μm, 50μm, 75μm, 100μm, 125μm, 150μm, 175μm, 200μm, 225μm, 250μm, 275μm, 300μm, 325μm, 350μm, 375μm, 400μm, 425μm, 450μm, 475μm or 500μm, etc.

[0078] This application controls the size of L1 within the range of 5μm-500μm. On the one hand, it avoids L1 being too small. If L1 is smaller than 5μm, the size of the second region 32 at the connection between the terminal 2 and the device body 1 will be small, resulting in poor protection against the gap between the terminal 2 and the device body 1, which is detrimental to improving the connection stability between the terminal 2 and the device body 1. On the other hand, it avoids L1 being too large. If L1 is larger than 500μm, the porosity of the second region 32 will be relatively small, resulting in an inconsistent appearance with the first region 31. When the size of the second region 32 is large, it may affect the appearance of the electronic component 100. Therefore, this application controls the size of L1 within the range of 5μm-500μm, which not only ensures the protective effect of the second region 32 against the gap between the terminal 2 and the device body 1, but also ensures the appearance of the electronic component 100.

[0079] In some examples, when the size L2 of the device body 1 is 1 mm, the extension size L1 of the second region 32 can be 20 μm. When the size L2 of the device body 1 is 3.2 mm, the extension size of the second region 32 can be 100 μm. When the size L2 of the device body 1 is 8 mm, the extension size of the second region 32 can be 150 μm. For example, when L1 is 20 μm, that is, the size of L1 can be formed by the second region 32 extending 20 μm along the first direction from the connection between the terminal 2 and the device body 1 towards the side away from the terminal 2. Of course, when 20 μm is the minimum measurable size of L1, the second region 32 can continue to extend in the direction away from the terminal 2, that is, the actual size L1 of the second region 32 can be greater than 20 μm.

[0080] It is understandable that at the connection between terminal 2 and device body 1, the edge of terminal 2 can be arc-shaped or straight, and the edge of the second region 32 can also be arc-shaped corresponding to the edge of terminal 2. The straight-line distance from the edge of terminal 2 to the edge of the second region 32 is equal everywhere. For example, when measuring the size of L1, the measurement can be taken from the arc apex of the edge of terminal 2 to the arc apex of the edge of the second region 32.

[0081] In some embodiments, the size of the first region 31 is L3, satisfying: 0.67 < L3 / L2 < 0.99.

[0082] For example, L3 / L2 can be 0.67-0.75, 0.75-0.85, 0.85-0.99, etc. For instance, L3 / L2 can be 0.7, 0.75, 0.8, 0.85, 0.9, or 0.95, etc.

[0083] This application controls the ratio of the extension dimension of the first region 31 to the dimension of the device body 1 to 0.67 < L3 / L2 < 0.99, ensuring that the appearance of the ceramic body meets the standard during electroplating while reducing the risk of short circuit during welding.

[0084] Secondly, please see Figure 9 This application also discloses an electronic device 200, including the electronic components 100 disclosed in the first aspect. The electronic device 200 also includes a device body 201 and a substrate 202 disposed within the device body 201, with the electronic components 100 disposed on the substrate 202.

[0085] In the electronic device 200 disclosed in this application, the electronic component 100 has a bonding layer 3 on the outer surface of the device body 1, and the terminal 2 and the bonding layer 3 form a second region 32 at the connection between the terminal 2 and the device body 1. This allows the terminal 2 to form a tight connection with the device body 1, effectively preventing the connection between the terminal 2 and the device body 1 from separating due to long-term operation in high-temperature and high-humidity environments, preventing water ingress into the electronic component 100, and improving the connection stability between the terminal 2 and the device body 1. Furthermore, when the electronic component 100 is connected to the substrate, the connection stability between the electronic component 100 and the substrate 202 can still be maintained in high-temperature and high-humidity environments, and the electronic component 100 itself has good stability, avoiding failure in high-temperature and high-humidity environments. In other words, the electronic device 200 also benefits from stable operation in high-temperature and high-humidity environments.

[0086] For example, electronic devices may include mobile phones, computers, tablets, smartwatches, headphones, etc., and this application does not specifically limit them.

[0087] Thirdly, please see Figure 10 This application also discloses a method for fabricating an electronic component, which is the electronic component disclosed in the first aspect. The fabrication method includes: S100, Terminals are provided on the surface of the device body.

[0088] S200. The device body is surface treated to form a bonding layer on the surface of the device body. The bonding layer on the side adjacent to the terminal is treated to form a second region, and the remaining untreated part of the bonding layer is constructed as a first region, wherein the silver content of the second region is greater than the silver content of the first region.

[0089] S300, sintering the device body with the bonding layer formed.

[0090] In the method for fabricating electronic components disclosed in this application, a bonding layer is formed on the outer surface of the component body through surface treatment. A second region is formed on the side of the bonding layer adjacent to the terminal, and the silver content in the second region is greater than that in the first region of the bonding layer. The silver in the second region can be formed by preparing a surface treatment solution with a higher silver content, or by performing surface treatment followed by additional treatment to allow more silver to penetrate. Thus, the second region has higher density during molding, effectively preventing the connection between the terminal and the component body from separating due to long-term operation in high-temperature and high-humidity environments, preventing water ingress into the electronic component, and improving the connection stability between the terminal and the component body.

[0091] It should be noted that the bonding layer is formed on the surface of the device body after the terminals are set. That is, the terminals are set first, and then the bonding layer is formed on the surface of the device body. This allows for the bonding layer to be formed on the surface of existing electronic components. In other words, the electronic component can be manufactured normally according to existing processes without changing the existing manufacturing flow. After production, the bonding layer can be formed on the surface of the electronic component through surface treatment. Therefore, the new electronic component proposed in this application does not affect the production of existing electronic components, requires minimal process modification, and is beneficial to the molding and production of the electronic component disclosed in this application.

[0092] Alternatively, when performing surface treatment on the device body, the device body can be immersed in a surface treatment solution. This allows a bonding layer to be uniformly formed on the surface of the device body.

[0093] It should be noted that if immersion treatment is used, since the terminal is located on the surface of the device body, no bonding layer will form on the surface of the terminal after immersion. To avoid the formation of a bonding layer on the terminal, a surface treatment solution with poor adhesion to the terminal can be used, or surface treatment can be performed only on the surface of the device body without the terminal.

[0094] Optionally, when immersing the device body for surface treatment, the temperature of the surface treatment solution can be controlled at 50℃-60℃.

[0095] For example, the temperature of the surface treatment solution can be 50℃-52℃, 52℃-54℃, 54℃-56℃, 56℃-58℃, 58℃-60℃, etc. For instance, the temperature of the surface treatment solution can be 50℃, 51℃, 52℃, 53℃, 54℃, 55℃, 56℃, 57℃, 58℃, 59℃, or 60℃, etc.

[0096] For example, the surface treatment liquid may include oxides and / or phosphides formed from various elements such as bismuth, cobalt, cadmium, carbon, oxygen, calcium, zinc, phosphorus, copper, and silver. For instance, the surface treatment liquid may include bismuth dioxide, cobalt trioxide, calcium phosphide, etc.

[0097] This application controls the temperature of the surface treatment solution at 50℃-60℃, which ensures that when the device body is immersed in the surface treatment solution, elements such as bismuth, cobalt, cadmium, carbon, oxygen, calcium, zinc, phosphorus, copper, and silver in the surface treatment solution can effectively and uniformly adhere to the surface of the device body to form a bonding layer, thereby improving the stability of the bonding layer on the surface of the device body.

[0098] In some embodiments, sintering the device body on which the bonding layer is formed includes: S301. Heat the device body to a first preset temperature and keep it at that temperature for a first preset time so that the bonding layer forms a second region.

[0099] In setting the second region, when the device body is heated to the first preset temperature, the bonding layer melts. Then, when the device body is kept at the first preset temperature for a first preset duration, silver can easily penetrate into the molten bonding layer, thereby increasing the silver content in the bonding layer. This is beneficial for the formation of the second region, and the density of the second region can be improved when it crystallizes after melting.

[0100] Optionally, the first preset temperature can be 800℃-850℃.

[0101] For example, the first preset temperature may be 800℃-810℃, 810℃-820℃, 820℃-830℃, 830℃-840℃, 840℃-850℃, etc. For instance, the first preset temperature may be 800℃, 805℃, 810℃, 815℃, 820℃, 825℃, 830℃, 835℃, 840℃, 845℃, or 850℃, etc.

[0102] This application controls the first preset temperature at 800℃-850℃, which is beneficial for melting the second zone and adding silver to it.

[0103] Optionally, the first preset duration can be 25-30 minutes.

[0104] For example, the first preset duration can be 25 min, 26 min, 27 min, 28 min, 29 min, or 30 min, etc. This application controls the first preset duration within 25 min-30 min. On the one hand, this avoids an excessively short heat preservation time, preventing some terminals from extending effectively and resulting in a small extension size of the second region formed with the bonding layer. On the other hand, it avoids an excessively long heat preservation time, as this would cause some terminals to extend excessively into the bonding layer, resulting in an excessively large extension size of the second region, excessively obscuring the surface of the device body and affecting the appearance of the electronic component. Therefore, this application controls the first preset duration within 25 min-30 min, thereby effectively controlling the extension size of the second region, ensuring the protective effect of the second region while preventing the second region from affecting the appearance of the electronic component.

[0105] In some embodiments, the preparation method disclosed in this application further includes: S401. The device body at the first preset temperature is cooled down to the second preset temperature, and then cooled down to the third preset temperature, where the third preset temperature is lower than the second preset temperature.

[0106] It is understandable that when the third preset temperature is lower than the second preset temperature, the process of cooling the device body from the first preset temperature to the second preset temperature and then to the third preset temperature is a gradual cooling process.

[0107] In other words, this application gradually cools down the sintered electronic components so that the second region can solidify, thereby improving the density of the second region and reducing the porosity of the second region.

[0108] Optionally, the second preset temperature can be 730℃-770℃.

[0109] For example, the second preset temperature can be 730℃-740℃, 740℃-750℃, 750℃-760℃, 760℃-770℃, etc. For instance, the second preset temperature can be 730℃, 735℃, 740℃, 745℃, 750℃, 755℃, 760℃, 765℃, or 770℃, etc.

[0110] Optionally, the third preset temperature can be 430℃-470℃.

[0111] For example, the third preset temperature can be 430℃-440℃, 440℃-450℃, 450℃-460℃, 460℃-470℃, etc. For instance, the third preset temperature can be 430℃, 435℃, 440℃, 445℃, 450℃, 455℃, 460℃, 465℃, or 470℃, etc.

[0112] In some embodiments, after cooling the device body at a first preset temperature to a second preset temperature and then to a third preset temperature, the method further includes: S402. Reheat the device body to the first preset temperature and maintain the temperature for the second preset time.

[0113] S403. Cool the main body of the device to a fourth preset temperature, which is lower than the second preset temperature and higher than the third preset temperature.

[0114] It is understandable that when the device body is heated back to the first preset temperature and then cooled down to the fourth preset temperature, the fourth preset temperature is lower than the second preset temperature. Therefore, the process of cooling down from the first preset temperature to the fourth preset temperature is a relatively fast cooling process.

[0115] In this way, after the device body is reheated and then rapidly cooled, the remelted second region can be quickly solidified, further improving the density of the second region. This enhances the protective effect of the second region on the gaps at the connection between the terminal and the device body, and improves the connection stability between the terminal and the device body.

[0116] Optionally, the second preset duration can be 25-30 minutes.

[0117] For example, the second preset time can be 25 min, 26 min, 27 min, 28 min, 29 min, or 30 min, etc. This application controls the second preset time to 25 min-30 min, which helps to ensure that the second region is fully remelted, so that the second region can be uniformly solidified during subsequent rapid cooling to improve density.

[0118] Optionally, the fourth preset temperature can be 480℃-520℃.

[0119] For example, the fourth preset temperature can be 480℃-490℃, 490℃-500℃, 500℃-510℃, 510℃-520℃, etc. The fourth preset temperature can be 480℃, 485℃, 490℃, 495℃, 500℃, 505℃, 510℃, 515℃, or 520℃, etc. When the device body is cooled from the first preset temperature to the fourth preset temperature, the device body undergoes rapid cooling, which enables effective curing of the second region and improves the density of the second region.

[0120] In some embodiments, the device body is heated to a first preset temperature and held at that temperature for a first preset time to allow the bonding layer to form a second region. The method includes: S3011. The device body is heated in a stepped manner so that the device body is gradually heated to the first preset temperature.

[0121] It is understandable that the device body is heated in a stepped manner, that is, with a first preset temperature as the target temperature, multiple temperature points are set within the target temperature range, and then the temperature of the device body is gradually increased. For example, the device body can be heated to 250℃-300℃ first, then to 600-650℃, and finally to 800℃-850℃.

[0122] In this way, the second region can be effectively melted during the gradual heating process, which is conducive to the penetration of silver into the second region.

[0123] To facilitate understanding of the solutions in this application, relevant embodiments are provided below for illustration.

[0124] On the one hand, this application controls the silver content in the second region, as shown in Table 1:

[0125] Table 1 Please refer to Table 1 above. In the relevant data table, the humidity load 1 is 60℃ temperature, 95% humidity, and a load of 1000h. The humidity load 2 is 60℃ temperature, 95% humidity, and a load of 2000h. The humidity load 3 is 85℃ temperature, 85% humidity, and a load of 1000h. The humidity load 4 is 85℃ temperature, 85% humidity, and a load of 2000h.

[0126] Taking the comparative example, under a humid heat load (60℃ temperature, 95% humidity, load for 2000h), the failure rate is 206 / 2000pcs, meaning that out of 2000 electronic components, 206 have failed.

[0127] Thus, as shown in Table 1, when the silver content in the second region is below 5%, the failure rate of electronic components increases significantly under relatively high humid heat loads, especially when the humid heat load is 85%. However, in the embodiments of this application, when the silver content in the second region is controlled between 5% and 40%, the failure rate is significantly reduced compared to the comparative example.

[0128] In other words, by controlling the silver content in the second region, this application can effectively improve the protective effect of the second region on electronic components and enhance the stability of electronic components.

[0129] On the other hand, this application controls the extension dimensions of the second region, as shown in Table 2:

[0130] Table 2 Please refer to Table 2 above. Analysis of Table 2 shows that when the extension size of the second region is less than 5 μm, the failure rate of electronic components increases significantly under relatively high humidity and heat loads, especially when the humidity and heat load is 85%. In the embodiments of this application, when the extension size of the second region is controlled between 5 μm and 500 μm, the failure rate is significantly reduced compared to the comparative example.

[0131] In other words, by controlling the extension size of the second region, this application can effectively improve the protection effect of the second region on electronic components and enhance the stability of electronic components.

[0132] The electronic components and electronic devices disclosed in the embodiments of this application have been described in detail above. Specific examples have been used to illustrate the principles and implementation methods of this application. The description of the above embodiments is only for the purpose of helping to understand the electronic components and electronic devices of this application and their core ideas. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of this application. Therefore, the content of this specification should not be construed as a limitation of this application.

Claims

1. An electronic component, characterized in that, include: Device body, the device body includes: bottom surface; The top surface and the bottom surface are disposed opposite each other along the thickness direction of the main body of the device; Two first end faces are disposed opposite to each other along a first direction; Two second end faces are disposed opposite to each other along a second direction; Terminals are disposed on the device body to cover one or more of the bottom surface, the top surface, the first end surface, and the second end surface; A bonding layer is disposed on the device body to cover one or more of the bottom surface, the top surface, the first end surface, and the second end surface; The bonding layer extends toward the terminal, and the bonding layer includes a first region and a second region. The second region is disposed near the connection between the terminal and the device body, and the silver content of the second region is greater than that of the first region. Both the first direction and the second direction intersect with the thickness direction of the device body.

2. The electronic component according to claim 1, characterized in that, The silver content of the second region on the side adjacent to the terminal is greater than the silver content of the second region on the side farther from the terminal.

3. The electronic component according to claim 1, characterized in that, The porosity of the second region is less than that of the first region.

4. The electronic component according to claim 1, characterized in that, The two terminals are respectively disposed on the bottom surface near the first end surface. The bonding layer is located between the two terminals along the first direction. The second region extends along the first direction. Along the first direction, the size of the second region is L1, the size of the device body is L2, and the size of the first region is L3, satisfying: 0.01 < L1 / L2 < 0.1; and / or, The condition is satisfied: 0.67 < L3 / L2 < 0.

99.

5. The electronic component according to claim 4, characterized in that, The size L1 of the second region satisfies: 5μm≤L1≤500μm.

6. The electronic component according to any one of claims 1-5, characterized in that, The silver content in the second region is 5%-40%.

7. The electronic component according to claim 6, characterized in that, The silver content in the second region is α, and the silver content in the first region is β, satisfying: 2 < α / β < 20.

8. The electronic component according to claim 7, characterized in that, The material in the second region also includes at least oxides and / or phosphides formed from a variety of bismuth, cobalt, cadmium, carbon, oxygen, calcium, zinc, phosphorus, and copper.

9. The electronic component according to claim 8, characterized in that, The silver content in the second region is α, and the phosphorus content in the second region is γ, satisfying: 20% < α / γ < 80%; and / or, The bismuth content in the second region is δ, satisfying: 0.5% < α / δ < 5%; and / or, The zinc content in the second region is θ, which satisfies: 10% < α / θ < 80%.

10. An electronic device, characterized in that, include: The electronic component as described in any one of claims 1-9.

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