Thermal ground plane with variable ionizing fluid flow control from reservoir

Abstract

The invention relates to a thermal ground plane with variable ionizing fluid flow control from a reservoir. A thermal ground plane (TGP) includes: a steam chamber containing an ionizing fluid; a reservoir in fluid connection with the vapor chamber, the reservoir configured to store excess ionized fluid; and an electromagnetic source configured to dynamically direct a variable amount of excess ionized fluid from the reservoir to the steam chamber based on a thermal resistance of the ionized fluid in the steam chamber or a temperature of the TGP at a location proximate to the heat source.

Description

TECHNICAL FIELD

[0001] Various aspects described herein relate generally to a thermal ground plane, and more particularly, to a thermal ground plane having an electromagnetic source configured to dynamically direct a variable amount of excess ionized fluid from a reservoir. BACKGROUND

[0002] The performance of vapor chambers (VCs) and thermal ground planes (TGPs) in phase change cooling systems is affected by the amount of water charged into the system. Higher water amounts increase the maximum heat transfer coefficient (Qmax), which is beneficial for high power applications. However, excessive water amounts increase the thermal resistance of the VC, resulting in higher case temperatures and poorer temperature uniformity. Conversely, lower water amounts decrease Qmax, limiting performance under high power conditions. There is a critical break-even point beyond which the thermal resistance associated with higher water amounts becomes lower than that of lower water amounts. This break-even point is difficult to identify, especially for electronic devices operating over a wide range of input power. SUMMARY

[0003] According to one embodiment of the disclosure, a thermal ground plane (TGP) is provided, comprising: a vapor chamber containing ionized fluid; a reservoir device fluidically connected to the vapor chamber for storing excess ionized fluid; and an electromagnetic source device for dynamically directing a variable amount of excess ionized fluid from the reservoir device to the vapor chamber based on a thermal resistance of the ionized fluid in the vapor chamber or a temperature of the TGP at a location proximate to a heat source.

[0004] According to one embodiment of the disclosure, an electronic device is provided, comprising: the TGP in the above embodiments; and an embedded controller coupled to the TGP for generating a control signal to control the electromagnetic source device based on a thermal resistance of the ionized fluid in the vapor chamber or a temperature of the TGP at a location proximate to the heat source. BRIEF DESCRIPTION OF DRAWINGS

[0005] Figures 1A-1C A schematic block diagram of a thermal ground plane is shown in accordance with various aspects of the disclosure.

[0006] Figure 2 A flowchart showing active control of ionized fluid flow in accordance with various aspects of the disclosure.

[0007] Figure 3 A plot depicting the thermal resistance of a TGP as a function of input power and different amounts of ionized fluid is shown in accordance with various aspects of the disclosure.

[0008] Figure 4 A schematic diagram of a thermal ground plane is shown in accordance with various aspects of the present disclosure.

[0009] Figure 5 A schematic diagram of a thermal ground plane is shown in accordance with various aspects of the present disclosure.

[0010] Figure 6A and Figure 6B A schematic diagram of a thermal ground plane with alternative reservoir placement is shown. DETAILED DESCRIPTION

[0011] The present disclosure relates to a thermal ground plane (TGP) that includes an electromagnetic source that dynamically adjusts the amount of excess ionized fluid drawn from a reservoir into a vapor chamber. By utilizing the electrical properties of the TGP, the system maintains an optimal amount of ionized fluid within the vapor chamber to accommodate different electronic device workloads.

[0012] Figures 1A-1C A schematic block diagram of a thermal ground plane (TGP) 100 (100A, 100B, 100C) is shown in accordance with various aspects of the present disclosure.

[0013] The TGP 100 is divided into two regions: an active region, which includes a vapor chamber 110; and a reservoir region, which has a reservoir 120. The active region is responsible for the evaporation and condensation of ionized fluid, while the reservoir region stores excess ionized fluid and dynamically controls the total amount of ionized fluid present in the active region. The TGP 100 has a variable liquid volume in the active region to enable performance optimization.

[0014] The TGP 100 includes a vapor chamber 110, a reservoir 120, an electromagnetic source 130, one or more thermistors 150, a valve 160, a membrane valve 170, and a flexible printed circuit (FPC) contact pin 180.

[0015] The vapor chamber 110 houses an ionized fluid selected based on the operating temperature of the TGP 100, which can be ionized water or other suitable ionized fluid. The vapor chamber 110 houses a mixture of liquid and vapor states of the ionized fluid in a sealed environment, and its maximum heat transfer capability is defined as Qmax. The Qmax of the vapor chamber can vary significantly depending on factors such as the location of the heat source, the overall chamber size, and external forces (e.g., gravity).

[0016] The reservoir 120 is fluidically connected to the vapor chamber 110 and is configured to store excess ionized fluid. In an ideal case, the reservoir 120 is positioned at the top of a fan cover 10 within an electronic device, although various aspects of the present disclosure are not limited to this configuration.

[0017] The electromagnetic source 130 is configured to dynamically control the movement of excess ionized fluid from the reservoir 120 to the vapor chamber 110 based on the thermal resistance of the ionized fluid in the vapor chamber 110 and / or the temperature of the TGP 100. The electromagnetic source 130 is positioned proximate to the edge of the reservoir 120. “Proximate” in the context of the electromagnetic source 130 refers to a position that is close enough to a target area within the vapor chamber 110 such that the electromagnetic source 130 can effectively generate a force to control or influence the movement of the ionized fluid. This placement ensures that the strength of the electromagnetic field is sufficient to attract, repel, or direct the ionized fluid without losing control significantly due to distance or external interference.

[0018] The electromagnetic source 130 has one or more electromagnetic posts 132 disposed between the upper layer 102 and the lower layer 104 of the TGP 100. These posts, which can be formed using standard support posts embedded with electromagnets or electromagnetic circuits, help maintain the space between the upper layer 102 and the lower layer 104. The TGP 100 can include a combination of electromagnetic posts 132 and standard support posts 108.

[0019] The electromagnetic source 130 is composed of electromagnetic materials, which are substances that interact with or respond to electromagnetic fields by generating, absorbing, or affecting electric or magnetic forces depending on their magnetic and electric properties. The electromagnetic materials can be any type of electromagnetic material suitable for the intended use described in this disclosure.

[0020] The heat source 140 can include one or more heat-generating devices, such as a processor, a logic unit, a field-programmable gate array (FPGA), a chipset, an integrated circuit (IC), a graphics processor, a graphics card, a battery, a memory, or other similar components.

[0021] One or more thermistors 150 can be embedded in the upper layer 102 or the lower layer 104 of the TGP 100. These thermistors are configured to measure the temperature of the TGP 100 at various points, including points proximate to the heat source 140, the reservoir 120, and the condenser 190 (as shown), among other possible locations. Figure 2 “Proximate” in the context of the thermistors 150 refers to being close to the heat source 140, the reservoir 120, and the condenser 190, among others, such that this proximity ensures accurate and relevant measurements. For example, when the thermistor 150 is placed proximate to the heat source 140 within the vapor chamber 110, it is placed close enough to effectively sense temperature changes or alterations directly influenced by the heat source 140.

[0022] Valve 160 (also referred to as a flow meter) is connected to the outlet of reservoir 120 and is designed to measure and / or control the flow of excess ionized fluid from reservoir 120 to vapor chamber 110, thereby ensuring that fluid can exit the reservoir at that location (but not re-enter). An additional valve 162 can be placed at the inlet of reservoir 120 to allow fluid to enter (but not exit) reservoir 120. Valves 160 and 162 can be, for example, Tesla valves and / or piezoelectric valves, or any other suitable valve.

[0023] Thin film valve 170 can optionally be connected to the outlet of reservoir 120 and is designed to regulate the flow rate of excess ionized fluid as it exits reservoir 120.

[0024] TGP 100 can be incorporated into an electronic device and connected to an embedded controller (EC) (not shown) through flexible printed circuit (FPC) contact pins 180. The embedded controller is configured to generate a control signal for electromagnetic source 130 based on the thermal resistance of the ionized fluid in vapor chamber 110 or the temperature of TGP 100 near heat source 140. In example implementations, the electronic device is intended to include a computer, a personal digital assistant (PDA), a notebook or electronic notepad, a cellular phone, a tablet, a network element, a network device, a server, a router, a switch, a gateway, a bridge, a load balancer, a processor, a module, or any other device, component, element, or object that includes a heat source.

[0025] The embedded controller can determine whether the workload from heat source 140 will raise the temperature of one or more heat sources 140 above a predetermined threshold. In some cases, the embedded controller uses a lookup table containing data from previous conditions, parameters, workloads, and thermal responses to help assess the workload of each heat source 140 and whether it will exceed the temperature threshold. In other cases, the embedded controller can utilize other methods to make such a determination. The temperature threshold can be set by the manufacturer, for example, a maximum operating temperature or a value below that maximum operating temperature (e.g., 75% of the maximum operating temperature), depending on the design and user preferences.

[0026] The embedded controller is also configured to generate an additional control signal to manage valve 160, which regulates the release of excess ionized fluid based on the system workload. For higher power workloads, the embedded controller adjusts valve 160 to release a larger amount of excess ionized fluid into vapor chamber 110, thereby achieving a higher Qmax. For lower power workloads, the embedded controller reduces the release of fluid to maintain a consistent temperature across TGP 100.

[0027] A wick structure composed of a porous material allows the ionized fluid to flow within the vapor chamber 110. The wick structure can include sintered powder, metal sintered fiber, mesh, grooved or machined walls of the vapor chamber 110, metal foam, pins, or posts. The wick structure enables the ionized fluid (in its condensed liquid phase) to move by capillary action from cooler regions of the vapor chamber 110 to hotter regions, such as regions near the heat source 140.

[0028] The ionized fluid attracted by the wick is passively moved through the wick structure in the vapor chamber 110, relying on capillary action to draw the ionized fluid from the condenser 190 back to the heat source 140 (the evaporator). This passive movement occurs without the need for external energy input, as the porous wick material enables the ionized fluid to naturally flow from cooler regions of the vapor chamber 110 (near the condenser 190) to hotter regions (near the heat source 140). In contrast, the ionized fluid attracted by the electromagnet is actively moved, which is controlled by the electromagnetic forces generated by the electromagnet 130. These forces actively direct the ionized fluid to specific regions within the vapor chamber 110, allowing for dynamic control of the fluid movement.

[0029] Figure 2 is a flowchart 200 illustrating active control of ionized fluid flow control in accordance with various aspects of the present disclosure.

[0030] The vapor chamber 110 serves as an active region 210 of the TGP 100 in which heat dissipation occurs. In this example, the total ionized fluid volume contained by the vapor chamber 110 is 108 mm 3 , where the initial prime volume is 2.9 mm 3 . The embedded controller optimizes device performance by adjusting the amount of ionized fluid in the active region 210 based on factors such as device power level, thermal resistance of the ionized fluid, and / or temperature of the TGP 100, particularly near the heat source 140.

[0031] The reservoir 120, located in the reservoir region 220, is fluidically connected to the vapor chamber 110. In this example, the reservoir has a storage capacity of 1.6 mm 3 and operates with the thin film valve 170 to allow one-way flow of the ionized fluid. Dynamic control of the reservoir 120 enables the ionized fluid volume in the active region to vary between 1.3 mm 3 and 4.5 mm 3 , maintaining an optimized state of the TGP 100 at different device power levels.

[0032] Figure 2 is shown in FIG. 2, but Figures 1A-1CA condenser 190 (not shown) is fluidly connected between a heat source 140 and a liquid receiver 120. Its function is to condense the ionized fluid in the vapor chamber 110 from a vapor state back to a liquid state.

[0033] Ionized fluid flow control is achieved through active regulation that directs excess ionized fluid from condenser 190 into reservoir 120 (step 201). Once excess ionized fluid enters reservoir 120, valve 162 prevents it from flowing back to condenser 190, thus trapping the fluid in reservoir 120. A diaphragm valve 170 located at the outlet of reservoir 120 regulates the flow rate of excess ionized fluid returning to the active area. Diaphragm valve 170 can control the outflow rate using a pulse width modulation (PWM) control signal from an embedded controller, in conjunction with the electromagnetic force generated by electromagnetic source 130 in this area. Ionized fluid from reservoir 120 is supplied to heat source 140 through a wick in vapor chamber 110 (step 202). The electromagnetic source 130 (which includes electromagnetic columns or circuits 132 / 134) generates a force that draws the ionized fluid from the reservoir 120 to the vapor chamber 110, thereby managing the movement of the ionized fluid to control the fluid level and ensure uniform temperature.

[0034] Heat source 140 (also called evaporator) is the region in which the liquid ionized fluid absorbs heat and transforms into a vapor state. The ionized fluid is drawn through the wick and circulated, thereby evaporating in the process (step 203). Condenser 190 then transforms the ionized fluid back into a liquid, which flows through the wick to repeat the cycle (step 204).

[0035] Thermistors 150, placed near the heat source 140 and other locations, provide real-time data on thermal resistance. The embedded controller uses this data to adjust the amount of ionized fluid in the active area, thereby ensuring efficient thermal management.

[0036] Figure 3 A graph 300 depicting the thermal resistance of a TGP as a function of input power and varying amounts of ionized fluid, according to various aspects of this disclosure, is shown. Applications with heavier workloads (e.g., gaming) require a larger amount of ionized fluid in the steam chamber 110 compared to applications with lighter workloads (e.g., productivity applications). It should be understood that graph 300 is provided for illustrative purposes only and is not intended to be limiting.

[0037] Figure 4 A schematic diagram of the thermal ground plane (TGP) 400 according to various aspects of this disclosure is shown. Figure 4 The reference numbers used are the same as Figures 1A-1C The similarities are, but the differences are: Figure 4 The labels in the code begin with "4" (instead of "1"). For the sake of brevity, the descriptions of these components will not be repeated.

[0038] As in Figures 1A-1C TGP 100, which employs electromagnets embedded within support posts 132, TGP 400 utilizes circuitry to generate electromagnetic forces for controlling the movement of ionized fluid in conjunction with valve 460. Specifically, electromagnetic source 430 includes one or more electromagnetic circuits 434 embedded within the upper and / or lower layers of TGP 400.

[0039] Figure 5 A schematic diagram of thermal ground plane 500 is shown in accordance with various aspects of the present disclosure. Figure 5 Reference numbers used in Figures 1A-1C and Figure 4 are similar, except that Figure 5 those in FIG. 5 begin with a “5”. For the sake of brevity, the description of these elements is not repeated.

[0040] Reservoir 520 is not formed with a loop connection to the condenser. In this configuration, the same volume of excess ionized fluid enters and exits reservoir 520 simultaneously.

[0041] Electromagnetic source 530 includes one or more electromagnetic circuits 534. These one or more electromagnetic circuits 534 are embedded within the upper 502 or lower 504 layers of TGP 500.

[0042] Figure 6A and Figure 6B A schematic diagram of thermal ground plane (TGP) 600 (600A and 600B) is shown, which illustrates alternative placement of reservoirs 620A and 620B.

[0043] Newer TGP designs employ thin vapor chambers produced through printed circuit board (PCB) manufacturing processes. Electromagnetic sources 130, 230, 430, 530, and thermistors 150 can be integrated into the PCB to dynamically control ionized fluid flow. With this PCB capability, TGP 600 provides flexibility in Z-height adjustment, enabling it to adapt to spaces that require thermal solutions.

[0044] For example, in Figure 6A reservoir 620A is positioned below fan shroud upper portion 690A, while in Figure 6B reservoir 620B is positioned above fan shroud upper portion 690B. The collapsibility of TGP 600 allows for flexible positioning of reservoir 620. Because reservoir 620 does not act as a primary heat transfer path, but rather as a buffer area for ionized fluid, its placement can be adjusted as needed.

[0045] The techniques of the present disclosure can also be described in the following examples.

[0046] Example 1. A thermal ground plane (TGP) comprising: a vapor chamber containing an ionized fluid; a reservoir fluidically connected to the vapor chamber, the reservoir configured to store excess ionized fluid; and an electromagnetic source configured to dynamically direct a variable amount of excess ionized fluid from the reservoir to the vapor chamber based on a thermal resistance of the ionized fluid in the vapor chamber or a temperature of the TGP at a location proximate to a heat source.

[0047] Example 2. The TGP of example 1, wherein the electromagnetic source is positioned proximate to an edge of the reservoir.

[0048] Example 3. The TGP of any one or more of examples 1-2, wherein the electromagnetic source comprises one or more electromagnetic columns disposed between an upper layer and a lower layer of the TGP.

[0049] Example 4. The TGP of any one or more of examples 1-3, wherein the electromagnetic source comprises one or more electromagnetic circuits.

[0050] Example 5. The TGP of example 4, wherein the one or more electromagnetic circuits are embedded within a support column disposed between an upper layer and a lower layer of the TGP.

[0051] Example 6. The TGP of example 4, wherein the one or more electromagnetic circuits are embedded within the upper layer or the lower layer of the TGP.

[0052] Example 7. The TGP of any one or more of examples 1-6, further comprising: one or more thermistors embedded in the upper layer or the lower layer of the TGP, the one or more thermistors configured to sense one or more temperatures of the TGP at respective locations.

[0053] Example 8. The TGP of example 7, wherein the thermistors are positioned proximate to the heat source and proximate to the reservoir.

[0054] Example 9. The TGP of example 7, further comprising: a condenser fluidically connected between the heat source and the reservoir, the condenser configured to condense the ionized fluid in the vapor chamber from a vapor state to a liquid state, wherein the thermistors are positioned proximate to the heat source, proximate to the reservoir, and proximate to the condenser.

[0055] Example 10. The TGP of any one or more of examples 1-9, further comprising: a valve coupled to an outlet of the reservoir, the valve configured to control a flow of the excess ionized fluid from the reservoir to the vapor chamber.

[0056] Example 11. The TGP of any one or more of examples 1-10, further comprising: a condenser fluidically connected between the heat source and the reservoir, the condenser configured to condense the ionized fluid in the vapor chamber from a vapor state to a liquid state.

[0057] Example 12. The TGP of any one or more of examples 1-10, wherein the reservoir is not formed with a loop connection to the condenser such that the same volume of excess ionized fluid enters and exits the reservoir simultaneously.

[0058] Example 13. The TGP of any one or more of examples 1-12, wherein the ionized fluid is ionized water.

[0059] Example 14. The TGP of any one or more of examples 1-13, further comprising: a flow meter configured to measure a flow rate of the excess ionized fluid exiting the reservoir.

[0060] Example 15. An electronic device comprising: the TGP of any one or more of examples 1-14; and an embedded controller coupled to the TGP, the embedded controller configured to generate a control signal to control the electromagnetic source based on a thermal resistance of the ionized fluid in the vapor chamber or a temperature of the TGP at a location proximate to a heat source.

[0061] Example 16. The electronic device of example 15, further comprising: a valve coupled to an outlet of the reservoir, the valve configured to control a flow of the excess ionized fluid from the reservoir to the vapor chamber, wherein the embedded controller is further configured to generate an additional control signal to control the valve.

[0062] Example 17. The electronic device of any one or more of examples 15-16, further comprising: a fan shroud, wherein the reservoir is positioned above the fan shroud.

[0063] Example 18. The electronic device of any one or more of examples 15-16, further comprising: a fan shroud, wherein the reservoir is positioned below the fan shroud.

[0064] Example 19. A thermal ground plane (TGP) comprising: a vapor chamber device containing an ionized fluid; a reservoir device fluidically connected to the vapor chamber device for storing excess ionized fluid; and an electromagnetic source device for dynamically directing a variable amount of excess ionized fluid from the reservoir device to the vapor chamber device based on a thermal resistance of the ionized fluid in the vapor chamber device or a temperature of the TGP at a location proximate to a heat source.

[0065] Example 20. The TGP of example 19, wherein the electromagnetic source device is positioned proximate to an edge of the reservoir device.

[0066] Example 21. The TGP of any one or more of examples 19-20, wherein the electromagnetic source device comprises one or more electromagnetic posts disposed between an upper layer and a lower layer of the TGP.

[0067] Example 22. The TGP of any one or more of examples 19-21, wherein the electromagnetic source device comprises one or more electromagnetic circuits.

[0068] Example 23. The TGP of example 22, wherein the one or more electromagnetic circuits are embedded within support posts disposed between the upper and lower layers of the TGP.

[0069] Example 24. The TGP of example 22, wherein the one or more electromagnetic circuits are embedded within the upper or lower layer of the TGP.

[0070] Example 25. The TGP of any one or more of examples 19-24, further comprising: one or more thermistor devices embedded in the upper or lower layer of the TGP for sensing one or more temperatures of the TGP at respective locations.

[0071] Example 26. The TGP of example 25, wherein the thermistor devices are positioned proximate to the heat source and proximate to the reservoir device.

[0072] Example 27. The TGP of example 25, further comprising: a condenser device fluidically connected between the heat source and the reservoir device for condensing ionized fluid in the vapor chamber device from a vapor state to a liquid state, wherein the thermistor devices are positioned proximate to the heat source, proximate to the reservoir device, and proximate to the condenser.

[0073] Example 28. The TGP of any one or more of examples 19-27, further comprising: a valve device coupled to an outlet of the reservoir device for controlling flow of excess ionized fluid from the reservoir device to the vapor chamber device.

[0074] Example 29. The TGP of any one or more of examples 19-28, further comprising: a condenser device fluidically connected between the heat source and the reservoir device for condensing ionized fluid in the vapor chamber device from a vapor state to a liquid state.

[0075] Example 30. The TGP of any one or more of examples 19-28, wherein the reservoir device is not formed in a loop connection with the condenser device such that the same volume of excess ionized fluid enters and exits the reservoir device at the same time.

[0076] Example 31. The TGP of any one or more of examples 19-30, wherein the ionized fluid is ionized water.

[0077] Example 32. The TGP of any one or more of examples 19-31, further comprising: a flow meter device for measuring a flow rate of the excess ionized fluid exiting the reservoir device.

[0078] Example 33. An electronic device comprising: the TGP of any one or more of examples 19-32; and an embedded controller device coupled to the TGP to generate a control signal to control the electromagnetic source device based on a thermal resistance of the ionized fluid in the vapor chamber device or a temperature of the TGP at a location proximate to the heat source.

[0079] Example 34. The electronic device of example 33, further comprising: a valve device coupled to an outlet of the reservoir device to control a flow of excess ionized fluid from the reservoir device to the vapor chamber device, wherein the embedded controller device is further to generate an additional control signal to control the valve device.

[0080] Example 35. The electronic device of any one or more of examples 33-34, further comprising: a fan shroud, wherein the reservoir device is positioned above the fan shroud.

[0081] Example 36. The electronic device of any one or more of examples 33-34, further comprising: a fan shroud, wherein the reservoir device is positioned below the fan shroud.

[0082] While the foregoing has been described in conjunction with the exemplary aspects, it will be understood that the term "exemplary" is used herein to mean "serving as an example, instance, or illustration," and not "preferred" or "advantageous over other examples." The detailed description includes specific details for the purpose of providing an understanding of the described techniques. These techniques, however, can be practiced without these specific details. The description is not meant to be taken in a limiting sense.

[0083] While specific aspects have been shown and described in detail to illustrate the application, it will be understood by those skilled in the art that various changes can be made and equivalents employed without departing from the scope of the application. The application is not limited to the specific details shown herein.

Claims

1. A thermal ground plane (TGP), comprising: The steam chamber contains ionized fluid; A liquid storage device, fluidly connected to the vapor chamber, for storing excess ionized fluid; as well as An electromagnetic source device is used to dynamically guide a variable amount of excess ionized fluid from the reservoir device to the steam chamber based on the thermal resistance of the ionized fluid in the steam chamber or the temperature of the TGP near the heat source.

2. The TGP according to claim 1, wherein, The electromagnetic source device is positioned near the edge of the liquid reservoir device.

3. The TGP according to claim 1, wherein, The electromagnetic source device includes one or more electromagnetic columns disposed between the upper and lower layers of the TGP.

4. The TGP according to claim 1, wherein, The electromagnetic source device includes one or more electromagnetic circuits.

5. The TGP according to claim 4, wherein, The one or more electromagnetic circuits are embedded in the support column disposed between the upper and lower layers of the TGP.

6. The TGP according to claim 4, wherein, The one or more electromagnetic circuits are embedded in the upper or lower layer of the TGP.

7. The TGP according to claim 1, further comprising: One or more thermistors are embedded in the upper or lower layer of the TGP to sense one or more temperatures of the TGP at corresponding locations.

8. The TGP according to claim 7, wherein, The thermistor is positioned close to the heat source and close to the liquid reservoir device.

9. The TGP according to claim 7, further comprising: A condenser, fluidly connected between the heat source and the liquid storage device, is used to condense the ionized fluid in the vapor chamber from a vapor state to a liquid state. The thermistor is positioned near the heat source, near the liquid storage device, and near the condenser.

10. The TGP according to claim 1, further comprising: A valve, coupled to the outlet of the reservoir device, is used to control the flow of the excess ionized fluid from the reservoir device to the vapor chamber.

11. The TGP according to claim 1, further comprising: A condenser, fluidly connected between the heat source and the liquid storage device, is used to condense the ionized fluid in the vapor chamber from a vapor state to a liquid state.

12. The TGP according to claim 1, wherein, The liquid reservoir device is not connected to the condenser in a loop, so that an equal volume of excess ionized fluid enters and leaves the liquid reservoir device simultaneously.

13. The TGP according to claim 1, wherein, The ionized fluid is ionized water.

14. The TGP according to any one of claims 1 to 13, further comprising: A flow meter for measuring the flow rate of excess ionized fluid leaving the reservoir device.

15. An electronic device comprising: The TGP according to claim 1; as well as An embedded controller, coupled to the TGP, is used to generate control signals to control the electromagnetic source device based on the thermal resistance of the ionized fluid in the steam chamber or the temperature of the TGP near the heat source.

16. The electronic device of claim 15, further comprising: A valve, coupled to the outlet of the reservoir device, is used to control the flow of the excess ionized fluid from the reservoir device to the vapor chamber. The embedded controller is also used to generate additional control signals to control the valve.

17. The electronic device according to claim 15, further comprising: Fan cover, The liquid reservoir device is positioned above the fan cover.

18. The electronic device according to any one of claims 15 to 17, further comprising: Fan cover, The liquid storage device is located below the fan cover.

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