Method for forming epitaxial structure on substrate and substrate processing apparatus

Abstract

The present disclosure relates to a method for forming an epitaxial structure on a substrate, a substrate processing apparatus, a computer program, and a non-transitory computer readable medium. The method includes providing a substrate in a processing chamber, and forming an epitaxial layer on the substrate by exposing the substrate in the processing chamber to at least one precursor in the presence of an active material.

Description

TECHNICAL FIELD

[0001] The present disclosure relates generally to the field of micro- and nanofabrication. In particular, the present disclosure relates to the field of semiconductor manufacturing technology, such as the manufacturing of integrated circuits. BACKGROUND

[0002] In recent years, due to the increasing demand for higher performance and miniaturization of electronic components, manufacturing methods of advanced semiconductor devices have been widely studied. Epitaxial chemical vapor deposition is essential for manufacturing high-quality semiconductor materials, for example, in the formation of multilayer structures. It is generally accepted that the use of multilayer structures including silicon (Si) and silicon-germanium (SiGe) layers can provide significant advantages in various semiconductor manufacturing workflows. However, some conventional solutions for epitaxial deposition of Si-SiGe multilayer structures can encounter challenges related to, for example, lattice mismatch, defect formation, and / or interface roughness, which can adversely affect device performance. Furthermore, achieving precise control over the composition and thickness of each layer in a multilayer stack remains a significant challenge, particularly at higher growth rates. In view of the above, it can be desirable to develop novel solutions related to epitaxial deposition of Si-SiGe multilayer stacks.

[0003] Any discussion of documents, acts, materials, products, or the like that has been included in this section is solely for the purpose of providing a context for the disclosure. Such discussion should not be taken as an acknowledgement that any or all of this information was known, considered, or altematively, made available, prior to the filing of the present invention. SUMMARY

[0004] The summary is provided to introduce a selection of concepts in a simplified form. These concepts are further described in detail in the detailed description of example embodiments of the disclosure below. The summary is not intended to identify key or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter.

[0005] According to a first aspect, a method for forming an epitaxial structure on a substrate is provided. The method comprises providing a substrate in a process chamber and forming an epitaxial layer on the substrate by exposing the substrate in the process chamber to at least one precursor in the presence of a reactive species.

[0006] According to a second aspect, a substrate processing apparatus is provided. The substrate processing apparatus comprises a process chamber configured to hold a substrate, a precursor source for providing at least one precursor in the process chamber, and a plasma source for providing a reactive species in the process chamber. The substrate processing apparatus comprises a control unit operatively coupled to at least the process chamber, the precursor source, and the plasma source. The control unit is configured to cause the substrate processing apparatus to perform the method according to the first aspect.

[0007] According to a third aspect, a computer program is provided. The computer program is configured to cause a substrate processing apparatus according to the second aspect to perform the method according to the first aspect.

[0008] According to a fourth aspect, a non-transitory computer readable medium is provided. The non-transitory computer readable medium is for, adapted for, and / or configured for storing the computer program according to the third aspect.

[0009] In some embodiments, the process of forming the epitaxial layer includes maintaining a plasma at less than or equal to 0.2 W / cm 2 of plasma power per exposed substrate area to produce the active species.

[0010] In some embodiments, the epitaxial structure is implemented as an epitaxial superlattice.

[0011] In some embodiments, the epitaxial layer includes crystalline silicon.

[0012] In some embodiments, the epitaxial layer has a layer thickness greater than or equal to 1 nm or 3 nm or 5 nm and / or less than or equal to 10 nm or 20 nm or 30 nm or 40 nm or 50 nm.

[0013] In some embodiments, the substrate includes a semiconductor wafer, such as a silicon wafer.

[0014] In some embodiments, the semiconductor wafer has a diameter of about 200 mm, about 300 mm, or about 450 mm.

[0015] In some embodiments, the at least one precursor includes silane.

[0016] In some embodiments, the process of forming the epitaxial layer includes exciting the at least one reactant to form the active species. In some embodiments, the process of exciting the at least one reactant includes exposing the active species to a plasma.

[0017] In some embodiments, the at least one reactant includes hydrogen gas.

[0018] In some embodiments, the active species includes hydrogen radicals and / or hydrogen ions.

[0019] In some embodiments, the process of forming the epitaxial layer includes maintaining a plasma at greater than or equal to 0.01 W / cm 2 or 0.02 W / cm 2 or 0.03 W / cm 2 or 0.04 W / cm 2 or 0.05 W / cm 2 and / or less than or equal to 0.1 W / cm 2 or 0.13 W / cm 2 or 0.15 W / cm2 or 0.17 W / cm 2 In some embodiments, the process of forming the epitaxial layer includes maintaining a plasma power per exposed substrate area of greater than or equal to 0.01 W / cm 2 or 0.02 W / cm 2 or 0.03 W / cm 2 or 0.04 W / cm 2 or 0.05 W / cm 2 and / or less than or equal to 0.1 W / cm 2 or 0.13 W / cm 2 or 0.15 W / cm 2 or 0.17 W / cm 2 or 0.2 W / cm 2 or 0.5 W / cm 2 or 1 W / cm 2 or 2 W / cm 2 to produce the active species.

[0020] In some embodiments, the process of forming the epitaxial layer includes producing the active species in the processing chamber.

[0021] In some embodiments, the process of forming the epitaxial layer includes maintaining a deposition pressure in the processing chamber of greater than or equal to 160 Pa or 200 Pa or 240 Pa or 280 Pa and / or less than or equal to 420 Pa or 460 Pa or 500 Pa.

[0022] In some embodiments, the process of forming the epitaxial layer includes maintaining a deposition temperature in the processing chamber of greater than or equal to 100 °C or 120 °C or 150 °C and / or less than or equal to 180 °C or 190 °C or 200 °C or 250 °C or 300 °C or 400 °C or 500 °C or 600 °C or 700 °C.

[0023] In some embodiments, the method includes pre-cleaning the substrate prior to the process of forming the epitaxial layer.

[0024] In some embodiments, the process of pre-cleaning the substrate includes providing the substrate in a pre-cleaning chamber, and the process of providing the substrate in the processing chamber includes transferring the substrate from the pre-cleaning chamber to the processing chamber under vacuum.

[0025] In some embodiments, the method includes forming a second epitaxial layer on the epitaxial layer by exposing the epitaxial layer in the processing chamber to one or more precursors in the presence of a second active species.

[0026] In some embodiments, the second epitaxial layer includes silicon germanium.

[0027] In some embodiments, the second epitaxial layer has a layer thickness greater than or equal to 1 nm or 3 nm or 5 nm and / or less than or equal to 10 nm or 20 nm or 30 nm or 40 nm or 50 nm.

[0028] In some embodiments, the one or more precursors include silane and germane.

[0029] In some embodiments, the process of forming the second epitaxial layer includes exciting the one or more reactants to form the second active species. In some embodiments, the process of exciting the one or more reactants includes exposing the second active species to a plasma.

[0030] In some embodiments, the one or more reactants include hydrogen gas.

[0031] In some embodiments, the second active species includes hydrogen radicals and / or hydrogen ions.

[0032] In some embodiments, the process of forming the second epitaxial layer includes maintaining a second plasma at a second plasma power greater than or equal to 0.01 W / cm2 2 or 0.02 W / cm2 2 or 0.03 W / cm2 2 or 0.04 W / cm2 2 or 0.05 W / cm2 2 and / or less than or equal to 0.1 W / cm2 2 or 0.13 W / cm2 2 or 0.15 W / cm2 2 or 0.17 W / cm2 2 or 0.2 W / cm2 2 or 0.5 W / cm2 2 or 1 W / cm2 2 or 2 W / cm2 2 per exposed substrate area to produce the second active species.

[0033] In some embodiments, the process of forming the second epitaxial layer includes generating the second active species in a process chamber.

[0034] In some embodiments, the process of forming the second epitaxial layer includes maintaining a second deposition pressure greater than or equal to 160 Pa or 200 Pa or 240 Pa or 280 Pa and / or less than or equal to 420 Pa or 460 Pa or 500 Pa in the process chamber.

[0035] In some embodiments, the process of forming the second epitaxial layer includes maintaining a second deposition temperature greater than or equal to 100 °C or 120 °C or 150 °C and / or less than or equal to 180 °C or 190 °C or 200 °C or 250 °C or 300 °C or 400 °C or 500 °C or 600 °C or 700 °C in the process chamber.

[0036] In some embodiments, the substrate processing apparatus is configured to simultaneously form an epitaxial layer on a substrate and one or more further epitaxial layers on one or more further substrates.

[0037] In some embodiments, the processing chamber comprises a substrate holder configured to hold a semiconductor wafer having a maximum diameter of about 200 mm, about 300 mm, or about 450 mm.

[0038] In some embodiments, the substrate processing apparatus comprises a reactant source for providing one or more reactants in the processing chamber.

[0039] In some embodiments, the substrate processing apparatus comprises a pre-clean chamber coupled with the processing chamber to allow transfer of a substrate from the pre-clean chamber to the processing chamber under vacuum. BRIEF DESCRIPTION OF DRAWINGS

[0040] A more complete understanding of embodiments of the present disclosure can be obtained by reference to the following specific description in connection with the attached drawings, in which:

[0041] Figure 1 A method for forming an epitaxial structure on a substrate is shown;

[0042] Figure 2A 、 Figure 2B 、 Figure 2C and Figure 2D A series of successive stages of a method for forming an epitaxial structure on a substrate are schematically shown;

[0043] Figure 3 A substrate processing apparatus is depicted; and

[0044] Figure 4 Another substrate processing apparatus is shown.

[0045] It is to be understood that the elements in the figures are shown for the purpose of simplicity and clarity and are not necessarily drawn to scale. For example, the dimensions of some of the elements in the figures can be exaggerated relative to other elements to help improve the understanding of the illustrated embodiments of the present disclosure.

[0046] The illustrations presented herein are not meant to be actual views of any particular material, structure or device, but are merely idealized representation that are employed to describe the embodiments of the present disclosure.

[0047] For clarity and conciseness, consistent reference characters can be used throughout the drawings to designate corresponding, similar, and / or identical elements. DETAILED DESCRIPTION

[0048] While certain embodiments and examples are disclosed herein, one skilled in the art will understand that the application extends beyond the specifically disclosed embodiments and / or uses and obvious modifications and equivalents thereof. Thus, it is intended that the scope of the described application herein include all such modifications and alterations from this disclosure. The description taken with the figures disclose the preferred embodiments and best mode of carrying out the application.

[0049] The particular implementations shown and described are illustrative examples of the application and its best mode and are not intended to otherwise limit the scope of the aspects and implementations in any way. Indeed, for the sake of brevity, conventional manufacturing, connecting, preparing, and other functions of the system can not be described in detail. Furthermore, the connecting lines shown in the various figures are intended to represent exemplary functional relationships and / or physical couplings between the various elements. Many alternative or additional functional relationships or physical connections can be present in a practical system, and / or absent in some embodiments.

[0050] It is to be understood that the configurations and / or approaches described herein are exemplary in nature, and that these specific embodiments or examples are not to be considered in a limiting sense, because numerous variations are possible. The specific routines or methods described herein can represent one or more of any number of processing strategies. As such, various acts illustrated can be performed in the sequence illustrated, in other sequences, or omitted in some embodiments.

[0051] The subject matter of the present disclosure includes all novel and non-obvious combinations and sub-combinations of the various processes, systems and configurations disclosed herein, and other features, functions, acts and / or properties disclosed herein, as well as any and all equivalents thereof.

[0052] Throughout the specification, "epitaxy" can refer to a type of crystal growth or layer formation on a substrate, where the deposited layer mimics or conforms to the crystal structure of the substrate. In some embodiments, epitaxial growth can involve deposition of a semiconductor material, such as silicon, gallium arsenide, or other compound semiconductors. Additionally or alternatively, epitaxy can refer to a process of growing a crystalline layer on a crystalline substrate. In this context, a "layer" can refer to a structure formed on a surface having a certain thickness. A layer can be continuous or discontinuous. A layer can or can not be composed of discrete monolayers or multilayers having certain properties. The boundary between adjacent layers can or can not be clear, and can or can not be established based on the physical, chemical, and / or any other properties, formation process or sequence, and / or function or purpose of the adjacent layers. A layer can or can not include pinholes. A layer can or can not be porous. Thus, an "epitaxial layer" can refer to a layer formed by epitaxy. Additionally or alternatively, an epitaxial layer can refer to a crystalline layer grown on a crystalline substrate, where the epitaxial layer mimics or conforms to the crystal structure of the substrate.

[0053] In this disclosure, a "structure" can refer to an arrangement or organization of material objects or interrelated elements in a system. In some embodiments, a structure can include layers, patterns, and / or configurations of materials that provide particular physical, chemical, and / or electrical properties. Thus, an "epitaxial structure" can refer to a structure that includes one or more epitaxial layers formed on a substrate. Additionally or alternatively, an epitaxial structure can refer to a structure in which epitaxial layers have a crystalline orientation that is aligned with an underlying substrate. In some embodiments, an epitaxial structure can include multiple epitaxial layers of different materials, each layer having a particular thickness, composition, and crystalline orientation. Additionally or alternatively, an epitaxial structure can refer to a semiconductor device or component, such as a transistor, diode, or integrated circuit, that includes one or more epitaxial layers. In some embodiments, an epitaxial structure can include one or more doped regions in which dopants are introduced into epitaxial layers to modify their electrical properties. Additionally or alternatively, an epitaxial structure can include one or more patterned regions in which particular regions of epitaxial layers are selectively etched or deposited to produce desired features or devices. In some embodiments, an epitaxial structure can include one or more interfaces between different epitaxial layers or between an epitaxial layer and a substrate, where the properties of these interfaces can be critical to the performance of the structure.

[0054] In this specification, a "superlattice" can refer to a stacked structure of layers of two or more materials, such as semiconductor materials, for example, a periodic or non-periodic stacked structure with a thickness ranging from a few angstroms (A) to tens of nanometers (nm). Thus, an "epitaxial superlattice" can refer to a superlattice structure in which the individual layers are formed on a substrate using epitaxy. Additionally or alternatively, an epitaxial superlattice can refer to a structure that includes multiple epitaxial layers of different materials arranged in a periodic manner, where each layer has a crystalline orientation that is aligned with the material underneath it. In some embodiments, an epitaxial superlattice can be designed to achieve particular electronic, optical, and / or mechanical properties by carefully controlling the thickness, composition, and / or order of the epitaxial layers.

[0055] In this disclosure, a“process” can refer to a series of one or more steps that result in an end result. Additionally or alternatively, a process can refer to a sequence of steps designed to achieve a particular goal. In some embodiments, a process can be a single-step process or a multi-step process. Additionally or alternatively, a process can be divided into a plurality of sub-processes, where individual sub-processes of such a plurality of sub-processes can or can not share common steps. In some embodiments, a process can involve iterative steps, feedback loops, or conditional steps based on predefined criteria. In this document, a“sub-process” can refer to a subset of steps within a larger process, which can function independently or in conjunction with other sub-processes. Additionally or alternatively, a sub-process can be defined by its particular role or function within the overall process. In some embodiments, a sub-process can be nested within other sub-processes, creating a hierarchical structure of steps. Furthermore, the term“end result” can refer to the final outcome or product achieved by executing a process. Additionally or alternatively, an end result can refer to an intermediate result used as a precursor to a subsequent step or process. In some embodiments, an end result can be quantifiable, such as a measurable change in a physical property, or qualitative, such as an improvement in performance or efficiency. Furthermore, a“step” can refer to an action taken in order to achieve one or more predefined end results. In some embodiments, a step can involve a physical action, a chemical reaction, data processing, or any combination thereof. Additionally or alternatively, a step can be performed manually, automatically, or semi-automatically.

[0056] Throughout the specification, a "chamber" can refer to an enclosed, openable, isolatable, and / or detachable space adapted or configured for holding and / or processing one or more substrates. Further, a "processing chamber" can refer to a chamber adapted or configured for performing one or more chemical (e.g., epitaxial) processes. Additionally or alternatively, a processing chamber can refer to a chamber adapted or configured to facilitate a chemical (e.g., epitaxial) reaction under controlled conditions. Additionally or alternatively, a processing chamber can refer to a chamber comprising one or more inlets and / or outlets for introducing and / or removing one or more substances, including, for example, solid, liquid, and / or gaseous substances. Additionally or alternatively, a processing chamber can refer to a chamber adapted or configured for depositing an epitaxial layer on a substrate by a chemical vapor deposition process. Additionally or alternatively, a processing chamber can refer to a processing chamber adapted or configured to supply at least one precursor to a substrate to form an epitaxial layer. Additionally or alternatively, a processing chamber can refer to a chamber defined by one or more of a physical barrier and / or a gas bearing and / or a gas curtain. Additionally or alternatively, a processing chamber can refer to a chamber configured to be fluidically separated and / or isolated from other processing chambers while the processing chamber is in use. In some embodiments, a processing chamber can comprise one or more gas inlets for introducing at least one precursor, one or more gas outlets for removing reaction byproducts and / or unused portions of the at least one precursor, and / or a substrate holder for positioning a substrate during a deposition process. In some embodiments, a processing chamber can comprise one or more temperature control elements, such as one or more heating elements and / or one or more cooling elements; and / or one or more pressure control elements, such as one or more vacuum pumps and / or pressure sensors. In some embodiments, a processing chamber can comprise one or more gas flow control elements, such as one or more mass flow controllers and / or valves.

[0057] In this specification, the term "substrate" can refer to a substrate material on which epitaxial growth occurs. In some embodiments, a substrate can comprise, consist essentially of, or consist of one or more single-crystalline materials, such as silicon, germanium, sapphire, and / or gallium arsenide. Additionally or alternatively, a substrate can refer to an article that provides mechanical support and / or a crystalline structure for an epitaxial layer. In some embodiments, a substrate can comprise a semiconductor wafer. In some embodiments, a substrate can comprise one or more epitaxial layers, such as a buffer layer.

[0058] In this specification, a "semiconductor wafer" can refer to a slice of one or more semiconductor materials, such as silicon, gallium arsenide, silicon carbide, and / or indium phosphide. In some embodiments, a semiconductor wafer can have a circular or rectangular shape. In some embodiments, a semiconductor wafer can have a thickness in a range from about 275 micrometers (pm) to 925 pm. In some embodiments, smaller or larger thicknesses can also be used, depending on the particular application and technical requirements. In embodiments where a semiconductor wafer has a circular shape, the semiconductor wafer can have any suitable diameter, such as a diameter in a range from 51 mm (2 inches) to 450 mm (17.7 inches). In some embodiments, smaller or larger diameters can also be used, depending on the particular application and technical requirements. In embodiments where a semiconductor wafer has a rectangular shape, the semiconductor wafer can have any suitable lateral dimensions, such as lateral dimensions in a range from 50 mm x 50 mm to 600 mm x 600 mm. In some embodiments, smaller or larger lateral dimensions can also be used, depending on the particular application and technical requirements.

[0059] Throughout this specification, a "species" can refer to a chemical substance, such as a chemical compound, a molecular building block of a solid array, or a molecular entity. Additionally or alternatively, a species can refer to one or more structurally distinct atoms, molecules, ions, radicals, or complexes. In this context, an "ion" can refer to an atomic or molecular particle having a net electric charge, and / or a "radical" can refer to an atomic or molecular particle having an unpaired electron. Further, an "active species" can refer to an unstable species formed in a plasma via interaction with a catalytic material at elevated temperatures and / or by other suitable means. Additionally or alternatively, an active species can refer to an ion, radical, and / or molecule excited by a plasma.

[0060] Throughout this specification, a "plasma" can refer to a partially or fully ionized gas comprising ions and electrons, and optionally neutral particles. Additionally or alternatively, a plasma can refer to a state of matter in which a gas is excited up to the point that at least a portion of the atomic electrons are no longer associated with any particular nucleus. In some embodiments, a plasma can be generated using a radio frequency (RF) or microwave power source.

[0061] Accordingly, a“plasma source” can refer to a device or system adapted or configured for generating a plasma. Additionally or alternatively, a plasma source can refer to a device or system adapted or configured for providing a reactive species in a process chamber. In some embodiments, a plasma source can be configured for generating a plasma at least partially via a radio frequency excitation (e.g., via a capacitively coupled radio frequency electromagnetic wave and / or an inductively coupled radio frequency electromagnetic wave). In some such embodiments, a plasma source can be configured to utilize one or more radio frequency excitation frequencies, such as one or more frequencies greater than or equal to 20 kHz or 50 kHz or 100 kHz or 300 kHz or 500 kHz or 1 MHz and / or less than or equal to 50 MHz or 100 MHz or 300 MHz or 500 MHz or 1 GHz, to generate a plasma. In some embodiments, a plasma source can be configured for generating a plasma at least partially via a microwave excitation (e.g., via electron cyclotron resonance). In some embodiments, a plasma source can be configured for generating a plasma at least partially via a surface wave excitation. In some embodiments, a plasma source can be configured for in-situ generation of a reactive species and / or non-in-situ (remote) generation of a reactive species. In such embodiments, a plasma source can be implemented as an in-situ and / or remote plasma source, respectively.

[0062] In the present disclosure, the term“exposed substrate area” can refer to a surface area of one or more substrates arranged inside a process chamber and exposed to a reactive species therein, e.g., during a process of forming an epitaxial layer. Additionally or alternatively, an exposed substrate area can refer to a maximum exposed substrate area of one or more substrates that can be held by a process chamber and can be exposed to a reactive species therein, e.g., during a process of forming an epitaxial layer. Additionally or alternatively, an exposed substrate area can refer to a maximum exposed substrate area of one or more substrates that a process chamber is configured to hold such that the one or more substrates can be exposed to a reactive species therein, e.g., during a process of forming an epitaxial layer. In some embodiments, an exposed substrate area can be measured by neglecting surface areas of microscopic and / or nanoscopic surface features, such as recesses, pores, pillars, holes, etc. In some embodiments, wherein each of the one or more substrates comprises a semiconductor wafer, an exposed substrate area of the one or more substrates can be defined by a lateral dimension, such as a diameter, of the semiconductor wafer and / or a number of wafer faces that can be exposed to a reactive species therein, e.g., during a process of forming an epitaxial layer. In some embodiments, wherein a substrate comprises a semiconductor wafer arranged on a substrate holder that shields wafer faces of the semiconductor wafer from being exposed to a reactive species, an exposed substrate area can be defined only by a lateral dimension, such as a diameter, of unshielded wafer faces of the semiconductor wafer. In the present context, a“wafer face” can refer to a polished face of a semiconductor wafer. Additionally or alternatively, a“wafer face” can refer to a face of a semiconductor wafer adapted or configured for microfabrication, nanofabrication, and / or semiconductor fabrication.

[0063] In this specification, “power” can refer to a rate of energy transfer or conversion. In some embodiments, power can refer to instantaneous power. In some embodiments, power can refer to time-averaged power. In some such embodiments, such time-averaged power can be averaged over a time period of a predetermined duration, such as a duration of 1 microsecond (ps), 10 ps, 50 ps, 100 ps, 500 ps, 1 millisecond (ms), 10 ms, 50 ms, 100 ms, 500 ms, 1 second (s), 2 s, 5 s, or 10 s. In some embodiments, time-averaged power can be averaged over one or more power signal duty cycles and / or over one or more power signal periods. Further, “plasma power” can refer to power applied to a plasma using electromagnetic radiation. Additionally or alternatively, plasma power can refer to power applied to a plasma to sustain the plasma, for example, under steady-state conditions or under quasi-steady-state conditions. Additionally or alternatively, plasma power can refer to power applied to a plasma to sustain the plasma after ignition of the plasma. Additionally or alternatively, plasma power can refer to power delivered by a reactive species to one or more exposed substrates, for example, during a process of forming an epitaxial layer.

[0064] Throughout this specification, “precursor” can refer to a chemical compound that participates in a chemical reaction to produce another compound. In some embodiments, the chemical reaction can occur in the gas phase. Additionally or alternatively, precursor can refer to a compound that is introduced into a processing chamber in gaseous form. Additionally or alternatively, precursor can refer to a compound that forms a desired material on a substrate upon decomposition or reaction. Additionally or alternatively, precursor can refer to a chemical compound that is suitable for or configured for forming an epitaxial layer on a substrate. Additionally or alternatively, precursor can refer to a compound that decomposes or reacts to form an epitaxial layer on a substrate when introduced into a processing chamber. In some embodiments, a precursor can comprise a metal-organic compound, hydride, or halide. In some embodiments, a precursor can be supplied in gaseous form. In some embodiments, a precursor can be volatilized (e.g., evaporated or sublimated) from a liquid or solid form prior to introduction into a processing chamber. In some embodiments, a carrier gas can be used to introduce a precursor into a processing chamber. In some such embodiments, a carrier gas can comprise one or more inert gases, such as nitrogen, helium, neon, and / or argon.

[0065] In the present disclosure, a "precursor source" can refer to an apparatus or system adapted or configured to provide at least one precursor to a processing chamber. Additionally or alternatively, a precursor source can refer to an apparatus or system configured to vaporize one or more liquid and / or solid precursors prior to introduction into a processing chamber. Additionally or alternatively, a precursor source can refer to an apparatus or system comprising one or more precursor delivery lines for delivering at least one precursor from one or more storage containers to a processing chamber. Additionally or alternatively, a precursor source can refer to an apparatus or system adapted or configured to supply a precursor in gaseous form to a processing chamber for forming an epitaxial layer on a substrate. In some embodiments, a precursor source can comprise one or more precursor containers or vessels for storing at least one precursor in liquid, solid, and / or gaseous form. In some embodiments, a precursor source can comprise a carrier gas supply system for introducing a carrier gas with a precursor into a processing chamber. In some embodiments, a precursor source can comprise one or more flow control valves for regulating the flow of one or more precursors into a processing chamber. In some embodiments, a precursor source can comprise one or more sensors, such as temperature sensors and / or pressure sensors, for monitoring conditions within one or more precursor containers or vessels.

[0066] Throughout the specification, "pre-cleaning" can refer to a process of cleaning and / or treating a surface of a substrate prior to forming an epitaxial layer and / or in preparation for forming an epitaxial layer. In this context, "cleaning" can refer to removing unwanted material from a surface, and / or "treating" can refer to applying a process to change a property of a surface. Additionally or alternatively, pre-cleaning can refer to removing oxygen-containing compounds from a surface of a substrate. Additionally or alternatively, pre-cleaning can refer to removing oxides, such as native oxides, from a surface of a substrate. Additionally or alternatively, pre-cleaning can refer to removing contaminants, such as oxygen, carbon, fluorine, etc., disposed on a surface of a substrate. Additionally or alternatively, pre-cleaning can refer to providing a passivated surface for a substrate. Additionally or alternatively, pre-cleaning can refer to providing a hydrophobic surface for a substrate. Additionally or alternatively, pre-cleaning can refer to plasma cleaning, wet chemical cleaning, hydrogen anneal, and / or thermal desorption. In some embodiments, pre-cleaning can comprise using a particular species, such as hydrogen, ammonia, hydrogen fluoride, one or more ionic species, and / or one or more radical species, to achieve a clean and prepared surface of a substrate for epitaxy.

[0067] Throughout this disclosure, a“control unit” can refer to a device or system that possesses at least one designated function related to determining and / or affecting one or more operating conditions, states, and / or parameters related to another device, unit, or component. Additionally or alternatively, a control unit can refer to a device or system that receives one or more input signals from one or more sensors and / or generates one or more output signals to control one or more actuators. Additionally or alternatively, a control unit can refer to a device or system that executes one or more control algorithms to maintain desired processing conditions of a substrate processing device. Additionally or alternatively, a control unit can refer to a device or system adapted or configured for controlling parameters in a substrate processing device, such as temperature, pressure, gas flow, plasma power, etc. Additionally or alternatively, a control unit can refer to a device or system that interfaces with an operator to allow for manual adjustment of processing parameters. In some embodiments, a control unit can be implemented as an electronic device. In some embodiments, a control unit can include hardware and / or software components. In some embodiments, a control unit can include a programmable logic controller (PLC) or a computer-based control system. In some embodiments, a control unit can be integrated with a data acquisition system to monitor and record process data. In some embodiments, a control unit can include safety interlocks to prevent unsafe operating conditions. In some embodiments, a control unit can form a component of a multi-functional control system.

[0068] Further, the phrase“control unit configured to” perform a process can refer to a control unit that is capable of, suitable for, and / or adapted to perform the process. Additionally or alternatively, a control unit configured to perform a process can also refer to any functional described property of the control unit that is performed, at least in part, by one or more hardware logic components. In some embodiments, a control unit can include at least one processor and at least one memory connected to the processor. In some such embodiments, the memory can store program code instructions that, when executed on the processor, prompt the processor to perform processes for which the control unit is configured. In some embodiments, a control unit can include one or more hardware logic components. In some such embodiments, the one or more hardware logic components can include, for example, a field-programmable gate array (FPGA), an application-specific integrated circuit (ASIC), an application-specific standard product (ASSP), a system-on-a-chip (SoC), a complex programmable logic device (CPLD), etc. A control unit can generally function according to any suitable principles and via any suitable circuitry and / or signals recognized in the art.

[0069] In some embodiments, the methods, apparatus, and devices described herein can be used in the fields of microfabrication and nanofabrication. In some embodiments, the methods, apparatus, and devices described herein can be used in the fields of microelectromechanical systems, microsystems, photonics, photovoltaics, display devices, and / or semiconductor manufacturing. In some embodiments, the methods, apparatus, and devices described herein can be advantageous for forming epitaxial structures, for example, at least partially via chemical vapor deposition. In some embodiments, they can be applied to the fabrication of silicon-based electronic devices, including memory devices, microprocessors, and sensors. In some embodiments, the methods, apparatus, and devices described herein can be used for the epitaxial deposition of Si-SiGe multilayer structures.

[0070] Figure 1 A method 1 for forming an epitaxial structure on a substrate according to an embodiment is schematically illustrated. Unless otherwise explicitly stated, Figure 1 Method 1 of the embodiments may include or exclude any features disclosed herein, with necessary modifications. Other embodiments may or may not be related to... Figure 1 The embodiments are the same or similar. Figure 1 In the text, dashed lines are used to indicate many optional features of method 1.

[0071] exist Figure 1 In some embodiments, the epitaxial structure can be implemented as an epitaxial superlattice. Therefore, Figure 1 Method 1 of the embodiments can be used as an example of a method for forming an epitaxial superlattice. In other embodiments, the epitaxial structure can be implemented in any suitable form, such as an epitaxial superlattice, an epitaxial bilayer, an epitaxial layer, a semiconductor device (e.g., a transistor, a semiconductor memory device, an integrated circuit, or a solar cell), etc.

[0072] Figure 1 Method 1 of the embodiments includes providing a substrate in a processing chamber 4. In method 1, a single substrate may be provided in the processing chamber. In other embodiments, any suitable number of substrates may be provided in the processing chamber, such as one, two, three, four, etc., or one or more, two or more, three or more, etc., or multiple substrates.

[0073] Figure 1 The substrate in one embodiment may include a semiconductor wafer, such as a silicon wafer. In other embodiments, any suitable type of substrate may be used, such as a semiconductor wafer, such as a silicon wafer, a III-V semiconductor wafer, etc.

[0074] exist Figure 1 In one embodiment, the semiconductor wafer may have a diameter of about 300 millimeters (mm). In other embodiments, the substrate comprises a semiconductor wafer, which may have any suitable lateral dimension, such as a diameter of about 200 mm, about 300 mm, or about 450 mm.

[0075] In Figure 1 In embodiments of the method 1 comprises forming an epitaxial layer 6 on the substrate by exposing the substrate in the process chamber to at least one precursor in the presence of an active species.

[0076] Figure 1 The epitaxial layer of embodiments of the method 1 can comprise crystalline silicon. In other embodiments, the epitaxial layer can be composed of, or consist essentially of, or comprise any suitable material, such as a semiconductor material, such as a Group IV elemental semiconductor, such as silicon and / or germanium; a Group IV compound semiconductor, such as silicon germanium; a Group III-V semiconductor, such as gallium nitride and / or gallium arsenide; a Group II-VI semiconductor, such as cadmium selenide; a Group I-VII semiconductor, such as cuprous chloride; a Group IV-VI semiconductor, such as tin telluride; a Group V-VI semiconductor, such as vanadium oxide; a Group II-V semiconductor, such as cadmium arsenide; a Group I-III-VI2 semiconductor, such as copper indium gallium selenide; and / or an oxide semiconductor; a dielectric material; and / or a conductor material.

[0077] In Figure 1 In embodiments of the method 1, the epitaxial layer can have a layer thickness of about 10 nanometers (nm). In other embodiments, the epitaxial layer can have any suitable layer thickness, such as a layer thickness greater than or equal to 1 nm or 3 nm or 5 nm and / or less than or equal to 10 nm or 20 nm or 30 nm or 40 nm or 50 nm.

[0078] Figure 1At least one precursor in one embodiment may include silane (SiH4). In other embodiments, at least one precursor exposed to the substrate during the formation of the epitaxial layer may consist of or consist substantially of any suitable precursor, or include any suitable precursor, such as silicon-containing precursors, such as hydride, such as silane, linear higher-order silanes (e.g., disilane, propane, butane, pentasilane, hexane, heptane, octane, nonane, decane, etc.). Branched higher silanes (e.g., neopentyl silane, 2-methylsilyl pentasilane, 2,2-dimethylsilyl tetrasilane, 2-methylsilyl trisilane, 2-methylsilyl tetrasilane, 3-methylsilyl pentasilane, 2,2-dimethylsilyl trisilane, 2,3-dimethylsilyl pentasilane, 2,2,3-trimethylsilyl pentasilane, 2,3,4-trimethylsilyl pentasilane, 2,3,4-trimethylsilyl pentasilane, 2,3-dimethylsilyl tetrasilane, 2,2,3,3-tetramethylsilyl tetrasilane, 2- Silyl hexasilane, 3-silyl hexasilane, 3,4-dimethylsilyl hexasilane, 2,3-dimethylsilyl hexasilane, 2,4-dimethylsilyl hexasilane, 4-silyl heptasilane, 2,2-dimethylsilyl pentasilane, 3,3-dimethylsilyl pentasilane, 3,3-dimethylsilyl hexasilane, 2,2-dimethylsilyl hexasilane, 2,3-dimethylsilyl hexasilane, 2-silyl heptasilane, 3-silyl heptasilane, 2,5-dimethylsilyl hexasilane, 2,3,3- Trimethylsilyl pentasilane, etc.); cyclic silanes (e.g., cyclotrisilane, cyclotetrasilane, cyclopentasilane, cyclohexylsilane, cycloheptane, etc., and their silyl-substituted variants); and / or silicon halides, such as monochlorosilane, dichlorosilane, trichlorosilane, 1,2-dichlorodisilane, 1,2,3-trichlorotrisilane, etc.; and / or silicon halides, such as silicon tetrachloride, silicon tetraiodide, silicon tetrabromide, hexachlorodisilane, octachlorotrisilane, etc.; and / or aminosilanes, such as hexa(ethylamino)disilane, bis(diethylamino)disilane, etc. (e.g.) silanes, diisopropylaminosilanes, etc.; and / or silane oxides, such as tetraethoxysilanes; and / or germanium-containing precursors, such as germanium hydrides, such as germanane, digermanane, trigermanane, tetragermanane, pentagermanane, etc., germanium hydrohalides, such as dichlorogermanane and / or trichlorogermanane, germanium halides, such as germanium tetrachloride, germanium tetrabromide and / or hexachlorodigermanane; and / or silicon and germanium-containing precursors, such as silicon-germanium hydrides, such as germanium-based silanes; and / or any of the above at least partially deuterium-substituted variants; and / or any mixtures of the above.

[0079] form Figure 1 The process of the epitaxial layer in the embodiments may include exciting at least one reactant to form an active substance. Specifically, Figure 1 At least one reactant in one of the embodiments may contain hydrogen (H2). Figure 1In some embodiments, hydrogen may be supplied to a processing chamber, wherein the hydrogen is subjected to a high-power radio frequency electromagnetic field to excite hydrogen molecules in the hydrogen. Without necessarily limiting this disclosure to any theoretical or operational mode, in some embodiments, such excitation may result in the formation of excited hydrogen molecules and / or the dissociation of hydrogen molecules to form excited and / or ground-state hydrogen atoms, radicals, and / or ions. In other embodiments, the process of forming the epitaxial layer may or may not include exciting at least one reactant to form an active material. Additionally or alternatively, in some embodiments, the at least one reactant excited to form the active material may consist of or substantially consist of any suitable reactant (e.g., hydrogen, deuterium, helium, neon, and / or argon), or include any suitable reactant (e.g., hydrogen, deuterium, helium, neon, and / or argon). In other embodiments, where the process of forming the epitaxial layer includes exciting at least one reactant to form an active material, the process of forming the epitaxial layer may or may not include supplying at least one reactant to a processing chamber. For example, in some embodiments, at least one reactant can be remotely excited outside the processing chamber to form an active substance, and the formed active substance can be transferred to the processing chamber to form an epitaxial layer.

[0080] exist Figure 1 In some embodiments, the active material may include hydrogen radicals and hydrogen ions. In other embodiments, the active material to which the substrate is exposed to at least one precursor during the formation of the epitaxial layer may consist of or substantially consist of any suitable active material, or include any suitable active material, such as hydrogen-containing, deuterium-containing, helium-containing, neon-containing and / or argon-containing active materials.

[0081] exist Figure 1 In one embodiment, the process of forming the epitaxial layer 6 includes maintaining the plasma 7 at a temperature of less than or equal to 0.2 W / cm². 2 The plasma power is maintained at a sufficiently low level per exposed substrate area to generate active material. In some embodiments, maintaining the plasma at a sufficiently low plasma power to generate active material allows for the formation of high-quality epitaxial layers at reduced temperatures. Alternatively, in some embodiments, maintaining the plasma at a sufficiently low plasma power per exposed substrate area to generate active material can reduce the total energy consumption of the method for forming an epitaxial structure on the substrate. Alternatively, in some embodiments, maintaining the plasma at a sufficiently low plasma power per exposed substrate area to generate active material can promote the formation of epitaxial layers with reduced interlayer diffusion. Alternatively, in some embodiments, maintaining the plasma at a sufficiently low plasma power per exposed substrate area to generate active material allows for the formation of epitaxial layers with reduced surface roughness.

[0082] Specifically, forming Figure 1The process of epitaxial layer 6 in the embodiment may include maintaining plasma 7 at about 0.15 watts per square centimeter (W / cm²). 2 or approximately 0.05 W / cm 2 The plasma power per exposed substrate area. In other embodiments, the process of forming the epitaxial layer may include maintaining the plasma at any suitable plasma power per exposed substrate area, for example, greater than or equal to 0.01 W / cm². 2 Or 0.02W / cm 2 Or 0.03W / cm 2 Or 0.04W / cm 2 Or 0.05W / cm 2 and / or less than or equal to 0.1 W / cm 2 Or 0.13W / cm 2 Or 0.15W / cm 2 Or 0.17W / cm 2 Or 0.2W / cm 2 Or 0.5W / cm 2 Or 1W / cm 2 Or 2W / cm 2 The plasma power is used to generate active materials.

[0083] exist Figure 1 In one embodiment, the process of forming the epitaxial layer 6 may include maintaining the plasma 7 at a plasma power of about 100 W or about 40 W. In other embodiments, the process of forming the epitaxial layer may include maintaining the plasma at any suitable plasma power, such as greater than or equal to 5 W or 10 W or 15 W or 20 W and / or less than or equal to 40 W or 50 W or 60 W or 70 W or 80 W or 90 W or 100 W or 110 W or 120 W or 130 W or 140 W or 150 W or 200 W or 300 W or 400 W or 500 W or 600 W or 700 W or 1000 W or 1500 W.

[0084] exist Figure 1In embodiments, the process of forming the epitaxial layer 6 can include generating the reactive species 9 in the processing chamber. In other embodiments, the process of forming the epitaxial layer can include generating the reactive species in any suitable manner and / or at any suitable location. For example, in some embodiments, the process of forming the epitaxial layer can include generating the reactive species in the processing chamber and / or outside of the processing chamber. In some embodiments, the process of forming the epitaxial layer can include generating the reactive species using an in-situ plasma source and / or a remote plasma source. In embodiments in which the process of forming the epitaxial layer includes generating the reactive species in the processing chamber and / or using an in-situ plasma source, the reactive species can be generated using any suitable technique or apparatus, such as a radio frequency plasma source, such as a capacitively coupled plasma source and / or an inductively coupled plasma source; a microwave plasma source, such as an electron cyclotron resonance plasma source; a surface wave plasma source, etc. In embodiments in which the process of forming the epitaxial layer includes generating the reactive species outside of the processing chamber and / or using a remote plasma source, the reactive species can be generated using any suitable technique or apparatus, such as a radio frequency plasma source, such as a capacitively coupled plasma source and / or an inductively coupled plasma source; a microwave plasma source, such as an electron cyclotron resonance plasma source; a surface wave plasma source, etc.

[0085] forming Figure 1 In embodiments, the process of forming the epitaxial layer 6 can include maintaining a deposition pressure 10 of about 200 Pascals (Pa) or 300 Pa in the processing chamber. In some embodiments, maintaining a suitable deposition pressure during the process of forming the epitaxial layer can enable adjusting a distribution of the reactive species near the substrate. Additionally or alternatively, in some embodiments, maintaining a suitable deposition pressure during the process of forming the epitaxial layer can increase a growth rate of the epitaxial layer. Additionally or alternatively, in some embodiments, maintaining a suitable deposition pressure during the process of forming the epitaxial layer can increase a crystallinity of the epitaxial layer. Additionally or alternatively, in some embodiments, maintaining a suitable deposition pressure during the process of forming the epitaxial layer can reduce etching while forming the epitaxial layer. In other embodiments, the process of forming the epitaxial layer can include maintaining any suitable deposition pressure in the processing chamber, such as a deposition pressure greater than or equal to 160 Pa or 200 Pa or 240 Pa or 280 Pa and / or less than or equal to 420 Pa or 460 Pa or 500 Pa.

[0086] In Figure 1In embodiments of the method 1, the process of forming the epitaxial layer 6 can include maintaining a deposition temperature 11 of about 200 degrees Celsius (°C), 350 °C, or 500 °C. In some embodiments, maintaining a suitable deposition temperature can increase a growth rate of the epitaxial layer. Additionally or alternatively, in some embodiments, maintaining a suitable deposition temperature can increase a crystallinity of the epitaxial layer. Additionally or alternatively, in some embodiments, maintaining a suitable deposition temperature can facilitate forming an epitaxial layer with reduced interlayer diffusion. Additionally or alternatively, in some embodiments, maintaining a sufficiently low deposition temperature can reduce a total energy consumption of the method for forming an epitaxial structure on a substrate. In other embodiments, the process of forming the epitaxial layer can include maintaining any suitable deposition temperature, such as a deposition temperature greater than or equal to 100 °C or 120 °C or 150 °C and / or less than or equal to 180 °C or 190 °C or 200 °C or 250 °C or 300 °C or 400 °C or 500 °C or 600 °C or 700 °C.

[0087] Figure 1 The method 1 of embodiments of the method 1 can include pre-cleaning the substrate 2 prior to the process of forming the epitaxial layer 6. In other embodiments, a method for forming an epitaxial structure on a substrate can or can not include pre-cleaning the substrate prior to the process of forming the epitaxial layer.

[0088] In Figure 1 In embodiments of the method 1, the process of pre-cleaning the substrate 2 can include providing the substrate in a pre-cleaning chamber 3, and the process of providing the substrate in the processing chamber 4 can include transferring the substrate 5 from the pre-cleaning chamber to the processing chamber under vacuum. In some embodiments, pre-cleaning the substrate in a pre-cleaning chamber separate from the processing chamber can enable separate optimization of the pre-cleaning chamber for pre-cleaning the substrate and the processing chamber for forming the epitaxial layer. In other embodiments, wherein a method for forming an epitaxial structure on a substrate includes pre-cleaning the substrate prior to the process of forming the epitaxial layer, the process of pre-cleaning the substrate can or can not include providing the substrate in a pre-cleaning chamber, and / or the process of providing the substrate in the processing chamber can or can not include transferring the substrate from the pre-cleaning chamber to the processing chamber, such as under vacuum or under an inert gas (e.g., argon, helium, and / or nitrogen) environment. In some embodiments, the processes of pre-cleaning the substrate and forming the epitaxial layer can be performed at least partially in the same processing chamber.

[0089] In Figure 1 In embodiments of the method 1, the process of forming the epitaxial layer 6 can include maintaining a deposition temperature 11 of about 200 degrees Celsius (°C), 350 °C, or 500 °C. In some embodiments, maintaining a suitable deposition temperature can increase a growth rate of the epitaxial layer. Additionally or alternatively, in some embodiments, maintaining a suitable deposition temperature can increase a crystallinity of the epitaxial layer. Additionally or alternatively, in some embodiments, maintaining a suitable deposition temperature can facilitate forming an epitaxial layer with reduced interlayer diffusion. Additionally or alternatively, in some embodiments, maintaining a sufficiently low deposition temperature can reduce a total energy consumption of the method for forming an epitaxial structure on a substrate. In other embodiments, the process of forming the epitaxial layer can include maintaining any suitable deposition temperature, such as a deposition temperature greater than or equal to 100 °C or 120 °C or 150 °C and / or less than or equal to 180 °C or 190 °C or 200 °C or 250 °C or 300 °C or 400 °C or 500 °C or 600 °C or 700 °C.

[0090] Figure 1 The second epitaxial layer in one embodiment may include, for example, silicon germanium. In other embodiments, the second epitaxial layer may be composed of or substantially composed of any suitable material, or include any suitable material, such as semiconductor materials, such as group IV element semiconductors, such as silicon and / or germanium; group IV compound semiconductors, such as silicon germanium; group III-V semiconductors, such as gallium nitride and / or gallium arsenide; group II-VI semiconductors, such as cadmium selenide; group I-VII semiconductors, such as cuprous chloride; group IV-VI semiconductors, such as tin telluride; group V-VI semiconductors, such as vanadium oxide; group II-V semiconductors, such as cadmium arsenide; group I-III-Vl2 semiconductors, such as copper indium gallium selenide; and / or oxide semiconductors; dielectric materials; and / or conductor materials.

[0091] exist Figure 1 In one embodiment, the second epitaxial layer may have a layer thickness of about 10 nm. In other embodiments, the second epitaxial layer may have any suitable layer thickness, such as greater than or equal to 1 nm, 3 nm, or 5 nm and / or less than or equal to 10 nm, 20 nm, 30 nm, 40 nm, or 50 nm.

[0092] Figure 1One or more precursors of embodiments of the application can include silane and germane (GeH4). In other embodiments, one or more precursors to which the substrate is exposed during the process of forming the second epitaxial layer can consist of, or consist essentially of, or include any suitable precursor, for example, a silicon-containing precursor, such as a hydridosilane, for example, silane, linear higher silanes (e.g., disilane, trisilane, tetrasilane, pentasilane, hexasilane, heptasilane, octasilane, nonasilane, decasilane, etc.). branched higher silanes (e.g., neopentasilane, 2-silylpentasilane, 2,2-disilyltetrasilane, 2-silyltrisilane, 2-silyltetrasilane, 3-silylpentasilane, 2,2-disilyltrisilane, 2,3-disilylpentasilane, 2,2,3-trisilylpentasilane, 2,3,4-trisilylpentasilane, 2,3-disilyltetrasilane, 2,2,3,3-tetrasilyltetrasilane, 2-silylhexasilane, 3-silylhexasilane, 3,4-disilylhexasilane, 2,3-disilylhexasilane, 2,4-disilylhexasilane, 4-silylheptasilane, 2,2-disilylpentasilane, 3,3-disilylpentasilane, 3,3-disilylhexasilane, 2,2-disilylhexasilane, 2,3-disilylhexasilane, 2-silylheptasilane, 3-silylheptasilane, 2,5-disilylhexasilane, 2,3,3-trisilylpentasilane, etc.), cyclic silanes (e.g., cyclotrisilane, cyclotetrasilane, cyclopentasilane, cyclohexasilane, cycloheptasilane, etc., and silyl-substituted variants thereof); and / or hydridosilanes, for example, monochlorosilane, dichlorosilane, trichlorosilane, 1,2-dichlorodisilane, 1,2,3-trichlorotrisilane, etc.; and / or halosilanes, for example, silicon tetrachloride, silicon tetraiodide, silicon tetrabromide, hexachlorodisilane, octachlorotrisilane, etc.; and / or aminosilanes, for example, hexa(ethylamido)disilane, bis(diethylamido)silane, diisopropylaminosilane, etc.; and / or oxysilanes, for example, tetraethoxysilane; and / or germanium-containing precursors, for example, germane hydride, for example, germane, digermane, trigermane, tetragermane, pentagermane, etc., germanium hydride, for example, dichlorogermane and / or trichlorogermane, germanium halide, for example, germanium tetrachloride, germanium tetrabromide, and / or hexachlorodigermane; and / or silicon- and germanium-containing precursors, for example, silylgermane; and / or any at least partially deuterium-substituted variants of any of the above; and / or mixtures of any of the above.

[0093] forming Figure 1 The process of forming the second epitaxial layer of embodiments of the application can include exciting one or more reactants to form a second active species. In particular, Figure 1One or more reactants in one embodiment may include hydrogen. In other embodiments, the process of forming the second epitaxial layer may or may not include exciting one or more reactants to form the second active material. Additionally or alternatively, in some embodiments, the one or more reactants excited to form the second active material may consist of or substantially consist of any suitable reactants (e.g., hydrogen, deuterium, helium, neon, and / or argon), or include any suitable reactants (e.g., hydrogen, deuterium, helium, neon, and / or argon). In other embodiments, where the process of forming the epitaxial layer includes exciting one or more reactants to form the second active material, the process of forming the second epitaxial layer may or may not include supplying one or more reactants into a processing chamber. For example, in some embodiments, one or more reactants may be excited remotely outside the processing chamber to form the second active material, and the formed second active material may be transferred to the processing chamber to form the second epitaxial layer.

[0094] exist Figure 1 In some embodiments, the second active material may include hydrogen radicals and hydrogen ions. In other embodiments, the second active material in which the substrate is exposed to one or more precursors in its presence during the formation of the second epitaxial layer may consist of or substantially consist of any suitable active material, or include any suitable active material, such as hydrogen-containing, deuterium-containing, helium-containing, neon-containing and / or argon-containing active materials.

[0095] form Figure 1 The process of the second epitaxial layer 12 in the embodiment may include maintaining the second plasma at about 0.05 W / cm². 2 0.07W / cm 2 0.1W / cm 2 0.12W / cm 2 Or 0.15W / cm 2 The second plasma power is applied per exposed substrate area to generate a second active material. In other embodiments, the process of forming the second epitaxial layer may include maintaining the second plasma at any suitable plasma power per exposed substrate area, for example, greater than or equal to 0.01 W / cm². 2 Or 0.02W / cm 2 Or 0.03W / cm 2 Or 0.04W / cm 2 Or 0.05W / cm 2 and / or less than or equal to 0.1 W / cm 2 Or 0.13W / cm 2 Or 0.15W / cm 2 Or 0.17W / cm 2 Or 0.2W / cm 2 Or 0.5W / cm 2 Or 1W / cm2 Or 2W / cm 2 The plasma power per exposed substrate area is used to generate active material.

[0096] exist Figure 1 In some embodiments, the process of forming the second epitaxial layer 12 may include generating a second active material 15 in a processing chamber. In other embodiments, the process of forming the second epitaxial layer may include generating the second active material in any suitable manner and / or at any suitable location. For example, in some embodiments, the process of forming the second epitaxial layer may include generating the second active material in and / or outside the processing chamber. In some embodiments, the process of forming the second epitaxial layer may include generating the second active material using an in-situ plasma source and / or a remote plasma source. In embodiments where the process of forming the second epitaxial layer includes generating the second active material in and / or using an in-situ plasma source in a processing chamber, any suitable technology or apparatus may be used to generate the active material, such as a radio frequency plasma source, such as a capacitively coupled plasma source and / or an inductively coupled plasma source; a microwave plasma source, such as an electron cyclotron resonance plasma source; a surface wave plasma source, etc. In an embodiment, the process of forming the second epitaxial layer includes generating a second active material outside the processing chamber and / or using a remote plasma source. The active material can be generated using any suitable technology or device, such as a radio frequency plasma source, such as a capacitively coupled plasma source and / or an inductively coupled plasma source; a microwave plasma source, such as an electron cyclotron resonance plasma source; a surface wave plasma source, etc.

[0097] form Figure 2A The process of forming the second epitaxial layer 12 in the embodiments may include maintaining a second deposition pressure 16 of about 200 Pa, 250 Pa, or 300 Pa in the processing chamber. In some embodiments, maintaining a suitable second deposition pressure during the process of forming the second epitaxial layer can enable the adjustment of the distribution of active material near the substrate. Alternatively, in some embodiments, maintaining a suitable second deposition pressure during the process of forming the second epitaxial layer can increase the growth rate of the second epitaxial layer. Alternatively, in some embodiments, maintaining a suitable second deposition pressure during the process of forming the second epitaxial layer can increase the crystallinity of the second epitaxial layer. Alternatively, in some embodiments, maintaining a suitable second deposition pressure during the process of forming the second epitaxial layer can reduce etching during the formation of the second epitaxial layer. In other embodiments, the process of forming the second epitaxial layer may include maintaining any suitable second deposition pressure in the processing chamber, such as a second deposition pressure greater than or equal to 160 Pa, 200 Pa, 240 Pa, or 280 Pa and / or less than or equal to 420 Pa, 460 Pa, or 500 Pa.

[0098] exist Figure 2BIn embodiments, the process of forming the second epitaxial layer 12 can include maintaining a second deposition temperature 17 of about 200 °C, 350 °C, or 500 °C. In some embodiments, maintaining a suitable second deposition temperature can increase the growth rate of the second epitaxial layer. Additionally or alternatively, in some embodiments, maintaining a suitable second deposition temperature can increase the crystallinity of the second epitaxial layer. Additionally or alternatively, in some embodiments, maintaining a suitable second deposition temperature can facilitate forming a second epitaxial layer with reduced interlayer diffusion. Additionally or alternatively, in some embodiments, maintaining a second deposition temperature that is sufficiently low can reduce the overall energy consumption of the method for forming an epitaxial structure on a substrate. In other embodiments, the process of forming the second epitaxial layer can include maintaining any suitable second deposition temperature, such as a second deposition temperature that is greater than or equal to 100 °C or 120 °C or 150 °C and / or less than or equal to 180 °C or 190 °C or 200 °C or 250 °C or 300 °C or 400 °C or 500 °C or 600 °C or 700 °C.

[0099] Figure 2C 、 Figure 2D 、 Figures 2A-2D and Figures 2A-2D illustrates a series of successive stages of a method for forming an epitaxial structure on a substrate according to embodiments. Unless explicitly stated otherwise, Figure 2A the method for forming an epitaxial structure on a substrate of embodiments can include or not include any of the features disclosed within this specification, mutatis mutandis. Other embodiments can be the same as or similar to Figure 2A embodiments.

[0100] Figure 2B illustrates a substrate 18 having an exposed face 19 exposed to at least one precursor 20 in the presence of a reactive species 21 in a process chamber to form an epitaxial layer 22 on the substrate 18. In Figure 2B , the at least one precursor 20 is schematically depicted as a set of intersecting circles, while the reactive species 21 is schematically depicted as a set of white dots. Figure 2C depicts the epitaxial layer 22 on the substrate 18, and illustrates the epitaxial layer 22 exposed to one or more precursors 23 in the presence of a second reactive species 24 in a process chamber to form a second epitaxial layer 25 on the epitaxial layer 22. In Figure 2D , the one or more precursors 23 is schematically depicted as a set of plus signs, while the second reactive species 24 is schematically depicted as a set of dots. Figures 2A-2D illustrates the substrate 18, the epitaxial layer 22 covering the substrate 18, and the second epitaxial layer 25 covering the epitaxial layer 22. Finally, Figure 3An epitaxial structure 26, and more particularly an epitaxial superlattice, is depicted, which can be formed, for example, by a process that forms epitaxial layers periodically (e.g., alternately) or aperiodically and / or forms second epitaxial layers. In this case, the substrate 18 and any previously formed layers can effectively serve as a substrate upon which new epitaxial layers are formed. Additionally or alternatively, previously formed and exposed epitaxial layers can effectively serve as epitaxial layers upon which new second epitaxial layers can be formed. In Figure 3 In embodiments of the substrate processing apparatus 27 of the system 10, the substrate 18 has one exposed face 19. In other embodiments, each substrate disposed in the processing chamber can independently have any suitable number of exposed faces, such as one or two.

[0101] Figure 3 A substrate processing apparatus 27 according to embodiments is schematically illustrated. Unless explicitly stated otherwise, the substrate processing apparatus 27 of embodiments of the system 10 can include or exclude any features disclosed within this specification, mutatis mutandis. Other embodiments can be the same as or similar to embodiments of the system 10. Figure 3 The substrate processing apparatus 27 of embodiments of the system 10 can include or exclude any features disclosed within this specification, mutatis mutandis. Other embodiments can be the same as or similar to embodiments of the system 10. Figure 3

[0102] In embodiments of the system 10, the substrate processing apparatus 27 includes a processing chamber 28 configured to hold the substrate 18. Figure 3 In embodiments of the system 10, the processing chamber 28 includes a substrate holder 29, such as a temperature-controlled susceptor, for holding the substrate 18. In other embodiments, in which the processing chamber is configured to hold a substrate, the processing chamber can include or exclude a susceptor. For example, in some embodiments, the processing chamber can include a boat for holding one or more substrates. Figure 3

[0103] Figure 3 The substrate holder 29 of embodiments of the system 10 is configured to hold a semiconductor wafer having a maximum diameter d max In other embodiments, in which the processing chamber includes a substrate holder, the substrate holder can be configured to hold any suitable substrate, such as one or more rectangular wafers, which can or can not have dimensions of about 510 mm by 515 mm; or one or more circular wafers, which can or can not have a maximum diameter of about 200 mm, about 300 mm, or about 450 mm.

[0104] Figure 3 ​​The substrate processing apparatus 27 of embodiments comprises a precursor source 30 for providing at least one precursor 20 in the processing chamber 28. The processing chamber 28 comprises a showerhead injector 31 and the precursor source 30 is configured to supply the at least one precursor 20 into the processing chamber 28 via the showerhead injector 31. In other embodiments, the processing chamber can comprise or not comprise a showerhead injector and / or the precursor source can be configured or not configured to supply the at least one precursor into the processing chamber, e.g. a showerhead injector. For example, in some embodiments, the precursor source can be configured to supply the at least one precursor into the processing chamber in a so-called cross-flow configuration, wherein the at least one precursor is directed to flow along the extent of the substrate via one or more precursor inlets and / or one or more precursor outlets.

[0105] In Figure 3 In embodiments of the substrate processing apparatus 27, the substrate processing apparatus 27 comprises a plasma source 32 for providing the reactive species 21 in the processing chamber 28. As indicated in Fig. 2 using dashed arrows, the plasma source 32 is electrically coupled to the substrate holder 29 and the showerhead injector 31 for applying a radio frequency power therebetween for generating the reactive species 21 in the processing chamber 28. In other embodiments, the plasma source can be electrically coupled or not electrically coupled to the substrate holder and / or the showerhead injector for providing the reactive species in the processing chamber. For example, in some embodiments, the plasma source can be configured for generating the reactive species outside the processing chamber and transferring the reactive species into the processing chamber. Further, in some embodiments, the plasma source can be configured to generate the reactive species using one or more plasma formation techniques which do not require applying a radio frequency power between the substrate holder and the showerhead injector.

[0106] Figure 3 The substrate processing apparatus 27 of embodiments further comprises a control unit 35. As indicated in Fig. 2 using dashed arrows, the control unit 35 is operably coupled to the processing chamber 28, the precursor source 30 and the plasma source 32. The control unit 35 is configured to cause the substrate processing apparatus 27 to perform the method according to the first aspect described above.

[0107] As indicated in Fig. 2 using dashed arrows, Figure 3The substrate processing apparatus 27 of embodiments can further include a reactant source 33 for providing one or more reactants, such as hydrogen, deuterium, argon, helium, or any mixture thereof, in the processing chamber 28. The reactant source 33 can be configured to supply the one or more reactants into the processing chamber 28 via the showerhead injector 31. The control unit 35 can be further operably coupled to the reactant source 33 and configured to cause the plasma source 32 to generate the active species 21 while the reactant source 33 supplies the one or more reactants into the processing chamber 28. In other embodiments, the substrate processing apparatus can include or not include a reactant source. For example, in some embodiments, the active species can be formed via excitation and / or dissociation of at least one precursor, such as when subjected to a high-power radio frequency electromagnetic field.

[0108] Figure 3 The substrate processing apparatus 27 of embodiments includes an exhaust pump 34 fluidly coupled to the processing chamber 28 for evacuating the processing chamber 28. The control unit 35 can be further operably coupled to the exhaust pump 34 and configured to purge the processing chamber 28 by operating the exhaust pump 34 and optionally a reactant source and / or a separate purge or cleaning gas source, which is not depicted in FIG. 2 for improved clarity.

[0109] In Figure 3In one embodiment, the substrate processing apparatus 27 is configured to simultaneously form an epitaxial layer on a substrate and one or more additional epitaxial layers on one or more additional substrates 37. The substrate processing apparatus 27 includes one or more additional processing chambers 36 configured to hold one or more additional substrates 37, a precursor source 30 configured to provide at least one precursor 20 in one or more additional processing chambers 36, a plasma source 32 configured to provide an active material 21 in one or more additional processing chambers 36, and a control unit 35 further operatively coupled to one or more additional processing chambers 36 to enable the substrate processing apparatus 27 to also perform the method according to the first aspect described above using one or more additional processing chambers 36. A reactant source 33 may be configured to also provide one or more reactants in one or more additional processing chambers 36, and / or an exhaust pump 34 may be fluidly coupled to one or more additional processing chambers 36 for venting one or more additional processing chambers 36. In other embodiments, where the substrate processing apparatus is configured to simultaneously form an epitaxial layer on a substrate and one or more additional epitaxial layers on one or more additional substrates, the substrate processing apparatus may or may not include one or more additional processing chambers. For example, in some embodiments, the substrate processing apparatus may include a processing chamber configured to hold a substrate and one or more additional substrates, thereby enabling simultaneous processing of the substrate and one or more additional substrates in a batch process within the processing chamber. In other embodiments, the substrate processing apparatus is configured to simultaneously form an epitaxial layer on the substrate and one or more additional epitaxial layers on one or more additional substrates, and includes a processing chamber and one or more additional processing chambers, at least a portion of which may or may not use the same precursor source, plasma source, control unit, reactant source, and / or exhaust pump.

[0110] exist Figure 3 In this embodiment, processing chamber 28 and one or more additional processing chambers 36 are held together by a common frame 38. Therefore, Figure 4 The substrate processing apparatus 27 of the embodiment may be referred to as a multi-chamber substrate processing module. Typically, when the substrate processing apparatus includes two or four processing chambers held together by a common frame, the substrate processing apparatus may be referred to as a dual-chamber or quad-chamber substrate processing module, respectively. Figure 4 In embodiments where the substrate processing apparatus 27 includes a total of two processing chambers held by a common frame, the substrate processing apparatus 27 can be implemented as a dual-chamber substrate processing module. In other embodiments, the substrate processing apparatus may or may not be implemented as a multi-chamber (e.g., dual-chamber or quad-chamber) substrate processing module. For example, in some embodiments, the substrate processing apparatus may include one or more processing chambers held by separate frames.

[0111] Figure 4 A substrate processing apparatus 27 according to another embodiment is schematically shown. Unless otherwise explicitly stated,Figure 4 The substrate processing apparatus 27 of the embodiments may include or exclude any features disclosed herein, with necessary modifications. Other embodiments may be with or without these features. Figure 4 The embodiments are the same or similar.

[0112] Figure 4 The substrate processing apparatus 27 of one embodiment includes a processing chamber 28 configured to hold a substrate 18, a precursor source 30 for providing at least one precursor in the processing chamber 28, and a plasma source 32 for providing an active material in the processing chamber 28. The substrate processing apparatus 27 also includes a control unit 35 operatively coupled to at least the processing chamber 28, the precursor source 30, and the plasma source 32. The control unit 35 is configured to cause the substrate processing apparatus 27 to perform the method according to the first aspect discussed above.

[0113] In some embodiments, the control unit may be configured to cause the substrate processing apparatus to perform the method according to the first aspect by running a computer program. In some embodiments, the computer program may include instructions that, when executed by a processor, cause the substrate processing apparatus to perform the method according to the first aspect. In some embodiments, the computer program may be written in a high-level programming language compatible with the control unit of the substrate processing apparatus, may be modular, and / or may consist of multiple software components, such as a user interface module, a processing control module, and / or a data logging module. Typically, the user interface module may provide a graphical user interface (GUI) and / or allow an operator to input processing parameters, monitor real-time data, and / or adjust process settings as needed. Alternatively or additionally, the process control module may manage the timing and / or sequence of precursor and active material delivery to ensure suitable conditions for epitaxial layer formation. Alternatively or additionally, the data logging module may log processing parameters, system status, and / or any anomalies for future analysis and quality control. In some embodiments, the computer program may include one or more algorithms to dynamically adjust the flow rate of a particular precursor and / or the power of one or more plasma sources based on real-time feedback from one or more sensors arranged in one or more processing chambers. In some embodiments, the computer program can execute predefined recipes for different types of epitaxial layers, which can increase consistency and / or repeatability across multiple runs. In some embodiments, the computer program can be designed to be compatible with various types of substrate processing equipment, thereby facilitating integration into existing substrate processing equipment. For example, in some embodiments, the computer program can support multiple communication standards (e.g., Ethernet and / or RS-232) for seamless interaction with other devices and control systems. In some embodiments, the computer program can be updated remotely, which allows for the addition of new features and improvements without significant substrate processing equipment downtime.

[0114] In some embodiments, a computer program configured to cause a substrate processing apparatus according to the second aspect to perform the method according to the first aspect can be stored on a computer readable medium, e.g. a non-transitory computer readable medium. In some embodiments, the non-transitory computer readable medium can retain stored data without continuous power supply. Examples of non-transitory computer readable media can include, but are not necessarily limited to, hard drives, solid-state drives (SSDs), optical discs (CDs, DVDs, and Blu-ray discs), flash devices (USB drives and memory cards), and magnetic tapes.

[0115] In ​ In embodiments where the substrate processing apparatus 27 comprises a pre-clean chamber 39 coupled with the process chamber 28 to allow for transfer of the substrate 18 from the pre-clean chamber 39 to the process chamber 28 under vacuum, the substrate processing apparatus 27 further comprises a substrate transfer chamber 44 provided with a back-end substrate transfer robot 45 connected to the process chamber 28 and the pre-clean chamber 39. While transferring the substrate 18 from the pre-clean chamber 39 to the process chamber 28 via the substrate transfer chamber 44, the substrate processing apparatus 27 is configured to maintain a vacuum in the substrate transfer chamber 44, whereby the substrate 18 can be transferred from the pre-clean chamber 39 to the process chamber 28 under vacuum. In other embodiments, the substrate processing apparatus can comprise or not comprise a substrate transfer chamber connected to the process chamber and / or the pre-clean chamber. In other embodiments, where the substrate processing apparatus comprises a pre-clean chamber coupled with the process chamber to allow for transfer of the substrate from the pre-clean chamber to the process chamber, e.g. under vacuum or under an inert gas (e.g. argon, helium and / or nitrogen) environment, the substrate can be transferred from the pre-clean chamber to the process chamber directly or indirectly, e.g. via a substrate transfer chamber or the like.

[0116] In ​ In embodiments where the substrate processing apparatus 27 comprises a pre-clean chamber 39 coupled with the process chamber 28 to allow for transfer of the substrate 18 from the pre-clean chamber 39 to the process chamber 28 under vacuum, the substrate processing apparatus 27 further comprises a substrate transfer chamber 44 provided with a back-end substrate transfer robot 45 connected to the process chamber 28 and the pre-clean chamber 39. While transferring the substrate 18 from the pre-clean chamber 39 to the process chamber 28 via the substrate transfer chamber 44, the substrate processing apparatus 27 is configured to maintain a vacuum in the substrate transfer chamber 44, whereby the substrate 18 can be transferred from the pre-clean chamber 39 to the process chamber 28 under vacuum. In other embodiments, the substrate processing apparatus can comprise or not comprise a substrate transfer chamber connected to the process chamber and / or the pre-clean chamber. In other embodiments, where the substrate processing apparatus comprises a pre-clean chamber coupled with the process chamber to allow for transfer of the substrate from the pre-clean chamber to the process chamber, e.g. under vacuum or under an inert gas (e.g. argon, helium and / or nitrogen) environment, the substrate can be transferred from the pre-clean chamber to the process chamber directly or indirectly, e.g. via a substrate transfer chamber or the like.

[0117] The example embodiments of the present disclosure described above do not limit the scope of the present invention, as the embodiments are merely examples of embodiments of the present invention, which are defined by the appended claims and their legal equivalents. Any equivalent embodiments are intended to fall within the scope of the present invention. Indeed, various modifications such as, for example, the substitution of equivalent means for those shown and described, can become apparent to those skilled in the art from the foregoing description. Such modifications and embodiments are also intended to fall within the scope of the appended claims.

Claims

1. A method for forming an epitaxial structure on a substrate, the method comprising: - Provide the substrate in the processing chamber, and - An epitaxial layer is formed on a substrate by exposing a substrate in a processing chamber to at least one precursor in the presence of an active substance; The process of forming the epitaxial layer includes maintaining the plasma at a temperature of less than or equal to 0.2 W / cm². 2 The plasma power per exposed substrate area is used to generate active material.

2. The method according to the preceding claim, wherein, The epitaxial structure is realized as an epitaxial superlattice.

3. The method according to any one of the preceding claims, wherein, The epitaxial layer comprises crystalline silicon.

4. The method according to any one of the preceding claims, wherein, The epitaxial layer has a thickness greater than or equal to 1 nm, 3 nm, or 5 nm and / or less than or equal to 10 nm, 20 nm, 30 nm, 40 nm, or 50 nm.

5. The method according to any one of the preceding claims, wherein, The substrate includes a semiconductor wafer, such as a silicon wafer.

6. The method according to claim 5, wherein, The semiconductor wafer has a diameter of approximately 200 mm, approximately 300 mm, or approximately 450 mm.

7. The method according to any one of the preceding claims, wherein, The at least one precursor includes silane.

8. The method according to any one of the preceding claims, wherein, The process of forming an epitaxial layer includes exciting at least one reactant to form the active substance.

9. The method according to any one of the preceding claims, wherein, The at least one reactant includes hydrogen gas.

10. The method according to any one of the preceding claims, wherein, The active substances include hydrogen free radicals and / or hydrogen ions.

11. The method according to any one of the preceding claims, wherein, The process of forming the epitaxial layer involves maintaining the plasma at a temperature greater than or equal to 0.01 W / cm². 2 Or 0.02W / cm 2 Or 0.03W / cm 2 Or 0.04W / cm 2 Or 0.05W / cm 2 and / or less than or equal to 0.1 W / cm 2 Or 0.13W / cm 2 Or 0.15W / cm 2 Or 0.17W / cm 2 The plasma power is used to generate the active material per exposed substrate area.

12. The method according to any one of the preceding claims, wherein, The process of forming the epitaxial layer includes generating the active material in the processing chamber.

13. The method according to any one of the preceding claims, wherein, The process of forming the epitaxial layer includes maintaining a deposition pressure greater than or equal to 160 Pa, 200 Pa, 240 Pa, or 280 Pa and / or less than or equal to 420 Pa, 460 Pa, or 500 Pa in the processing chamber.

14. The method according to any one of the preceding claims, wherein, The process of forming the epitaxial layer includes maintaining a deposition temperature of 100°C or 120°C or 150°C and / or 180°C or 190°C or 200°C or 250°C or 300°C or 400°C or 500°C or 600°C or 700°C in the processing chamber.

15. The method according to any one of the preceding claims, wherein, The method includes pre-cleaning the substrate before the process of forming the epitaxial layer.

16. The method according to claim 15, wherein, The process of pre-cleaning the substrate includes providing the substrate in a pre-cleaning chamber, and the process of providing the substrate in a processing chamber includes transferring the substrate from the pre-cleaning chamber to the processing chamber under vacuum.

17. The method according to any one of the preceding claims, wherein, The method includes forming a second epitaxial layer on the epitaxial layer by exposing the epitaxial layer in the processing chamber to one or more precursors in the presence of a second active substance.

18. The method according to claim 17, wherein, The second epitaxial layer comprises silicon germanium.

19. The method according to claim 17 or 18, wherein, The second epitaxial layer has a layer thickness greater than or equal to 1 nm or 3 nm or 5 nm and / or less than or equal to 10 nm or 20 nm or 30 nm or 40 nm or 50 nm.

20. The method according to any one of claims 17 to 19, wherein, The one or more precursors include silane and germanane.

21. The method according to any one of claims 17 to 20, wherein, The process of forming the second epitaxial layer includes exciting one or more reactants to form the second active substance.

22. The method according to any one of claims 17 to 21, wherein, One or more reactants include hydrogen.

23. The method according to any one of claims 17 to 22, wherein, The second active substance includes hydrogen free radicals and / or hydrogen ions.

24. The method according to any one of claims 17 to 23, wherein, The process of forming the second epitaxial layer includes maintaining the second plasma at a temperature greater than or equal to 0.01 W / cm². 2 Or 0.02W / cm 2 Or 0.03W / cm 2 Or 0.04W / cm 2 Or 0.05W / cm 2 and / or less than or equal to 0.1 W / cm 2 Or 0.13W / cm 2 Or 0.15W / cm 2 Or 0.17W / cm 2 Or 0.2W / cm 2 Or 0.5W / cm 2 Or 1W / cm 2 Or 2W / cm 2 The second plasma power is used to generate the second active material per exposed substrate area.

25. The method according to claim 17 or 24, wherein, The process of forming the second epitaxial layer includes generating the second active substance in the processing chamber.

26. The method according to any one of claims 17 to 25, wherein, The process of forming the second epitaxial layer includes maintaining a second deposition pressure greater than or equal to 160 Pa, 200 Pa, 240 Pa, or 280 Pa and / or less than or equal to 420 Pa, 460 Pa, or 500 Pa in the processing chamber.

27. The method according to any one of claims 17 to 26, wherein, The process of forming the second epitaxial layer includes maintaining a second deposition temperature in the processing chamber at a temperature greater than or equal to 100°C, 120°C, or 150°C and / or less than or equal to 180°C, 190°C, 200°C, 250°C, 300°C, 400°C, 500°C, 600°C, or 700°C.

28. A substrate processing apparatus, comprising: - Processing chamber, configured to hold the substrate, - A precursor source for providing at least one precursor in a processing chamber, and - A plasma source used to supply active material in the processing chamber. The substrate processing apparatus includes a control unit operatively coupled to at least a processing chamber, a precursor source, and a plasma source, the control unit being configured to cause the substrate processing apparatus to perform the method according to any one of claims 1 to 27.

29. The substrate processing apparatus according to claim 28, wherein, The substrate processing apparatus is configured to simultaneously form an epitaxial layer on the substrate and one or more additional epitaxial layers on one or more additional substrates.

30. The substrate processing apparatus according to claim 28 or 29, wherein, The processing chamber includes a substrate holder configured to hold a semiconductor wafer having a maximum diameter of about 200 mm, about 300 mm, or about 450 mm.

31. The substrate processing apparatus according to any one of claims 28 to 30, wherein, The substrate processing apparatus includes a reactant source for providing one or more reactants in the processing chamber.

32. The substrate processing apparatus according to any one of claims 28 to 31, wherein, The substrate processing apparatus includes a pre-cleaning chamber coupled to the processing chamber to allow the substrate to be transferred from the pre-cleaning chamber to the processing chamber under vacuum.

33. A computer program configured to cause a substrate processing apparatus according to any one of claims 28 to 32 to perform the method according to any one of claims 1 to 27.

34. A non-transitory computer-readable medium storing a computer program according to claim 33.

Images