Substrate processing system and substrate processing apparatus

Abstract

The substrate processing system of the present invention comprises: a vacuum transfer module; a main interface unit having a first surface connected to the vacuum transfer module, a second surface located on the opposite side of the first surface, an upper surface, and a lower surface; and a substrate processing module, the substrate processing module comprising: a replaceable intermediate chamber unit having an upper surface and a lower surface; a replaceable upper chamber unit detachably connected to the upper surface of the replaceable intermediate chamber unit; and a replaceable lower chamber unit detachably connected to a lower surface of the replaceable intermediate chamber unit. The replaceable intermediate chamber unit includes: a chamber side wall structure defining an inner space; a substrate support part disposed in the internal space; and an intermediate interface structure detachably connected to the second surface of the main interface unit, the replaceable upper chamber unit comprising: a chamber upper wall structure defining the internal space and having a gas introduction port for introducing a process gas into the internal space; and an upper interface structure detachably connected to the upper surface of the main interface unit, the replaceable lower chamber unit comprising: a chamber bottom wall structure defining the internal space and having a gas discharge port for discharging gas in the internal space; and a lower interface structure detachably connected to the lower surface of the main interface unit.

Description

Technical Field

[0001] This invention relates to a substrate processing system and a substrate processing apparatus. Background Technology

[0002] Patent document 1 discloses a substrate processing system including a vacuum transport module with multiple processing modules arranged on its side. It also discloses a structure in which an electrical assembly unit is included at the top of the processing module and a power system unit is included at the bottom of the processing module.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2021-034495 Summary of the Invention

[0006] The technical problem that the invention aims to solve

[0007] The technology of this invention allows for appropriate maintenance of the substrate processing module within the substrate processing system.

[0008] Technical solutions for solving technical problems

[0009] One aspect of the present invention is a substrate processing system, comprising: a vacuum transport module; a main interface unit having a first surface connected to the vacuum transport module, a second surface located opposite to the first surface, an upper surface, and a lower surface; and a substrate processing module, the substrate processing module comprising: a replaceable intermediate chamber unit having an upper surface and a lower surface; a replaceable upper chamber unit detachably connected to the upper surface of the replaceable intermediate chamber unit; and a replaceable lower chamber unit detachably connected to the lower surface of the replaceable intermediate chamber unit, the replaceable intermediate chamber unit comprising: a chamber sidewall structure defining an internal space; and a structure disposed within the internal space. The replaceable upper chamber unit includes: a substrate support portion within the internal space; and an intermediate interface structure that can be detachably connected to the second surface of the main interface unit; the replaceable lower chamber unit includes: an upper chamber wall structure that defines the internal space and has a gas inlet for introducing processing gas into the internal space; and an upper interface structure that can be detachably connected to the upper surface of the main interface unit; the replaceable lower chamber unit includes: a lower chamber wall structure that defines the internal space and has a gas outlet for discharging gas from the internal space; and a lower interface structure that can be detachably connected to the lower surface of the main interface unit.

[0010] Invention Effects

[0011] According to the present invention, the substrate processing module can be appropriately maintained in the substrate processing system. Attached Figure Description

[0012] Figure 1 This is a plan view showing the structure of the substrate processing system in the implementation method.

[0013] Figure 2 This is a perspective view showing a portion of the structure of the substrate processing system in the implementation method.

[0014] Figure 3 This is a perspective view showing the structure of each unit in the implementation method.

[0015] Figure 4 This is a three-dimensional diagram showing a state example when the intermediate unit is installed on the main interface unit.

[0016] Figure 5 This is a perspective view showing a state example when the upper and lower units are installed on the main interface unit.

[0017] Figure 6 This is an explanatory diagram showing the structure of the substrate processing module in the first embodiment.

[0018] Figure 7 This is an explanatory diagram showing the structure of each unit in the first embodiment.

[0019] Figure 8 This is an explanatory diagram showing the structure of the substrate processing module in the second embodiment.

[0020] Figure 9 This is an explanatory diagram showing the structure of each unit in the second embodiment.

[0021] Figure 10 This is an explanatory diagram showing the structure of the substrate processing module in the third embodiment.

[0022] Figure 11 This is an explanatory diagram showing the structure of each unit in the third embodiment. Detailed Implementation

[0023] In the manufacturing process of semiconductor devices, various processing steps are performed to depressurize a substrate processing module that houses a semiconductor substrate (hereinafter referred to as "substrate") and to perform prescribed processing on the substrate. Furthermore, these multiple processing steps are performed, for example, using a substrate processing apparatus in which multiple substrate processing modules are arranged around a common transport module.

[0024] As disclosed in Patent Document 1, the substrate processing module includes an internal space for processing the substrate, and numerous components related to a gas supply system, a power supply system, or a control system. These components are maintained as needed, including initial configuration, inspection, cleaning, repair, or replacement.

[0025] However, in the substrate processing system disclosed in Patent Document 1, there are situations where the entire substrate processing module needs to be disassembled and broken down when maintaining it. In this case, the productivity of the entire substrate processing system decreases during periods when the substrate processing module is unusable. Furthermore, when initially installing the substrate processing module into the system, or reinstalling it after maintenance, separate connections are required for piping, cables, etc., related to the aforementioned gas supply system, power system, or control system. Additionally, transporting the entire substrate processing module between the substrate processing system and external sources incurs costs. Moreover, storing and replacing the entire substrate processing module externally also incurs costs. Therefore, there is room for improvement from the perspective of proper maintenance.

[0026] Therefore, the technology of the present invention allows for appropriate maintenance of the substrate processing module within the substrate processing system. Specifically, a substrate processing system comprising multiple units capable of appropriate maintenance is provided.

[0027] Hereinafter, the structure of the substrate processing apparatus of this embodiment will be described with reference to the accompanying drawings. Furthermore, in this specification, elements having substantially the same functional configuration are labeled with the same reference numerals, and repeated descriptions are omitted.

[0028] <Substrate Processing System>

[0029] The substrate processing system of this embodiment will be described. Figure 1 This is a plan view showing the general structure of the substrate processing system according to this embodiment. In the substrate processing system, the substrate W is subjected to process treatments including, for example, film formation, cleaning, and other plasma treatments, as desired gas treatments.

[0030] like Figure 1 As shown, the substrate processing system includes a substrate processing unit 1 and a control unit 2. The substrate processing unit 1 has an atmospheric unit 10 and a decompression unit 11 integrally connected via loading locking modules 20 and 21. The atmospheric unit 10 includes an atmospheric module for performing desired processing on the substrate W under atmospheric pressure. The decompression unit 11 includes a decompression module for performing desired processing on the substrate W under a decompression atmosphere.

[0031] Loading locking modules 20 and 21 are configured to connect, via gates 22 and 23, to the atmospheric delivery module 30 (described later) of the atmospheric section 10 and the vacuum delivery module 40 (described later) of the depressurization section 11. Loading locking modules 20 and 21 are configured to temporarily hold the substrate W. Furthermore, loading locking modules 20 and 21 are configured to switch their internal pressure between atmospheric and depressurized atmospheres (vacuum).

[0032] The atmospheric section 10 includes an atmospheric transport module 30, which includes a substrate transport mechanism 50 described later, and a loading port 32 for holding a substrate cassette 31 capable of storing multiple substrates W. Additionally, an orientation module (not shown) for adjusting the horizontal orientation of the substrates W and a storage module (not shown) for storing multiple substrates W may be provided adjacent to the atmospheric transport module 30.

[0033] The atmospheric delivery module 30 includes a housing with an internally approximately cuboid shape, the interior of which is maintained at atmospheric pressure. On one side of the long side of the housing constituting the atmospheric delivery module 30, a plurality of (e.g., five) loading ports 32 are arranged side-by-side. On the other side of the long side of the housing constituting the atmospheric delivery module 30, loading locking modules 20 and 21 are arranged side-by-side.

[0034] An atmospheric transport module 30 is provided inside for transporting a substrate W. The substrate transport mechanism 50 includes a transport arm 51 that holds and moves the substrate W, a rotary table 52 that rotatably supports the transport arm 51, and a rotary mounting platform 53 on which the rotary table 52 is mounted. Furthermore, a guide rail 54 extending along the length of the atmospheric transport module 30 is provided inside the atmospheric transport module 30. The rotary mounting platform 53 is mounted on the guide rail 54, and the substrate transport mechanism 50 is configured to move along the guide rail 54.

[0035] The depressurization unit 11 includes a vacuum transport module 40 for transporting a substrate W internally, and a substrate processing module 60 for performing desired processing on the substrate W transported from the vacuum transport module 40. The interiors of the chambers in the vacuum transport module 40 and the substrate processing module 60, described later, are respectively configured to maintain a depressurized atmosphere.

[0036] A vacuum transport module 40 is connected to multiple substrate processing modules 60. The chambers of the substrate processing modules 60 are connected to the vacuum transport module 40 via openings 71 provided in the main interface unit 70. The openings 71 include at least one gate. Details regarding the substrate processing modules 60 and the main interface unit 70 are described later. Additionally, although in Figure 1 The example shown has 6 substrate processing modules 60 connected, but it is not limited to this; fewer or more than 6 substrate processing modules 60 can be connected.

[0037] The vacuum transport module 40 is connected to the loading and locking modules 20 and 21 as described above. In one embodiment, the vacuum transport module 40 is configured to transport the substrate W, which has been transported from the atmosphere 10 to the loading and locking module 20, to a substrate processing module 60. Furthermore, the vacuum transport module is configured to transport the substrate W, which has undergone the desired processing in the substrate processing module 60, to the loading and locking module 21.

[0038] Inside the vacuum transport module 40, a substrate transport mechanism 73 for transporting the substrate W is provided. The substrate transport mechanism 73 includes a transport arm 74 for holding and moving the substrate W, a rotary table 75 supporting the transport arm 74 in a rotatable manner, and a rotary mounting stage 76 on which the rotary table 75 is mounted. Furthermore, inside the vacuum transport module 40, a guide rail 77 extending in the longitudinal direction of the vacuum transport module 40 is provided. The rotary mounting stage 76 is mounted on the guide rail 77, and the substrate transport mechanism 73 is configured to move along the guide rail 77.

[0039] The substrate transport mechanism 73 receives the substrate W held in the loading locking module 20 using the transport arm 74 and transports it to the desired substrate processing module 60. Furthermore, the substrate transport mechanism 73 holds the substrate W, in the substrate processing module 60, where the desired processing has been performed, using the transport arm 74 and transports it to the loading locking module 21.

[0040] Furthermore, the vacuum delivery module 40 is equipped with multiple gas boxes 80, for example, in this embodiment, corresponding to each substrate processing module 60, for supplying gas to the substrate processing module 60. The gas box 80 is one example of a gas box unit. However, the number and arrangement of the gas boxes 80 are not limited to this embodiment. Figure 1 In the example shown, six gas chambers 80 are provided corresponding to the six substrate processing modules 60, but this is not a limitation; fewer or more than six gas chambers 80 may be provided. In one embodiment, the gas chambers 80 are mounted on the frame of the substrate processing module 60, positioned above the vacuum delivery module 40.

[0041] The control unit 2 processes computer-executable instructions that cause the substrate processing apparatus 1 to perform the various processes described herein. The control unit 2 may be configured to control the various elements of the substrate processing apparatus 1 to perform the various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the substrate processing apparatus 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 may be implemented, for example, by a computer 2a. The processing unit 2a1 may be configured to read a program from the storage unit 2a2 and perform various control actions by executing the read program. The program may be pre-stored in the storage unit 2a2 or retrieved via a medium when needed. The retrieved program is stored in the storage unit 2a2 and read and executed by the processing unit 2a1 from the storage unit 2a2. The medium may be various storage media readable by the computer 2a or a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include RAM (Random Access Memory), ROM (Read-Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 can communicate with the substrate processing device 1 via a communication line such as a LAN (Local Area Network).

[0042] Figure 2 This is a perspective view schematically illustrating a partial outline of the substrate processing system of this embodiment. The main interface unit 70 includes: a first surface 91 located on the side connected to the vacuum delivery module 40 (positive Y-axis side); a second surface 92 located on the side opposite to the first surface (negative Y-axis side); a third surface 93 located on the upper side (positive Z-axis side) between the first surface 91 and the second surface 92; and a fourth surface 94 located on the lower side (negative Z-axis side) between the first surface 91 and the second surface 92. An opening 71 is provided to extend from the first surface 91 to the second surface 92. A sealing ring 95 is provided on the second surface 92 side of the opening 71.

[0043] The second side 92, the third side 93, and the fourth side 94 each include a guide pin 96. In addition, any one of the second side 92, the third side 93, or the fourth side 94 includes one or more ports 97 or connectors 98.

[0044] like Figure 2 As shown, the substrate processing module 60 of this embodiment can be detachably mounted on the main interface unit 70. Figure 2The main interface unit 70 on the left (positive X-axis direction) is in the state where the substrate processing module 60 is installed, while the main interface unit 70 on the right (negative X-axis direction) is in the state where the substrate processing module 60 has been removed.

[0045] The substrate processing module 60 includes at least a middle unit 101, an upper unit 102, and a lower unit 103. The middle unit 101, upper unit 102, and lower unit 103 are examples of a replaceable middle chamber unit, a replaceable upper chamber unit, and a replaceable lower chamber unit, respectively. The middle unit 101 includes a middle interface structure 111. The middle unit 101 is detachably mounted to the second surface 92 of the main interface unit 70 via the middle interface structure 111. The upper unit 102 includes an upper interface structure 112 and is detachably mounted to the third surface 93 of the main interface unit 70 via the upper interface structure 112. The lower unit 103 includes a lower interface structure 113 and is detachably mounted to the fourth surface 94 of the main interface unit 70 via the lower interface structure 113.

[0046] Figure 3 This is a schematic diagram showing the outline structure of the middle unit 101, upper unit 102, and lower unit 103 in their state after being removed from the main interface unit 70. Additionally, in Figure 3 The diagram only shows the outer surface structure of the housing of the intermediate interface structure 111, the upper interface structure 112, and the lower interface structure 113, omitting the internal structures of these structures and the internal structures of other units. The intermediate unit 101, the upper unit 102, and the lower unit 103 are detachable from each other and can be... Figure 3 The two sides are shown to be separated. The middle unit 101 includes an upper surface 101a and a lower surface 101b. The upper surface 101a can be detached from the upper unit 102, and the lower surface 101b can be detached from the lower unit 103.

[0047] Regarding the intermediate unit 101, the intermediate interface structure 111 has a guide hole 121 at a position corresponding to the guide pin 96 provided on the second surface 92 of the main interface unit 70. Furthermore, a port 122 and a connector 123 are provided at positions corresponding to the port 97 and connector 98 provided on the second surface 92. Additionally, an opening 124 is provided at a position corresponding to the opening 71 on the second surface 92. The opening 124 is configured to extend from the surface of the intermediate interface structure 111 opposite to the second surface 92 (the surface on the positive Y-axis direction) to its opposite surface (the surface on the negative Y-axis direction). A sealing ring 125 is provided at the port 122.

[0048] Similarly, the upper unit 102 and the lower unit 103 are provided with guide holes 121, pipe openings 122 and connectors 123 at positions corresponding to the guide pins 96, pipe openings 97 and connectors 98 provided on the third surface 93 and the fourth surface 94, respectively. A sealing ring 125 is provided at the pipe opening 122.

[0049] In one embodiment, starting from the state where the intermediate unit 101, the upper unit 102 and the lower unit 103 of the substrate processing module 60 are detached from each other, the intermediate unit 101 is first installed onto the main interface unit 70. Figure 4 This is a perspective view showing a state example when the intermediate unit 101 is installed on the main interface unit 70. Figure 4 In this example, the intermediate unit 101 is moved from the negative Y-axis direction to the positive Y-axis direction, so that the guide hole 121 provided in the intermediate interface structure 111 engages with the guide pin 96 provided in the second surface 92 of the main interface unit 70. With the second surface 92 and the surface of the intermediate interface structure 111 opposite to the second surface 92 (the surface on the positive Y-axis direction) in contact, the main interface unit 70 and the intermediate interface structure 111 are fastened together. The fastening method is not particularly limited and can be achieved using known clamps or bolts.

[0050] With the second surface 92 of the main interface unit 70 fastened to the intermediate interface structure 111, the opening 71 of the second surface 92 contacts the opening 124 of the intermediate interface structure 111, and they are connected in a sealed state, isolating them from external air, using a sealing ring 95. The vacuum delivery module 40 communicates with the chamber 200 (described later) through the connected openings 71 and 124. The substrate W is transported between the vacuum delivery module 40 and the chamber 200 via the delivery arm 74, through these openings 71 and 124.

[0051] Furthermore, the port 97 of the second surface 92 contacts the port 122 of the intermediate interface structure 111, and they are connected in a sealed state, isolating them from external air by the sealing ring 125. Additionally, the connector 98 of the second surface 92 contacts and connects to the connector 123 of the intermediate interface structure 111.

[0052] Next, with the second side 92 of the main interface unit 70 and the middle interface structure 111 fastened together, the upper side unit 102 and the lower side unit 103 are installed onto the main interface unit. Figure 5 This is a perspective view showing an example of a state when the upper unit 102 and the lower unit 103 are installed on the main interface unit 70. Figure 5In the example, regarding the upper unit 102, the upper unit 102 is moved from the positive Z-axis direction to the negative Z-axis direction, so that the guide hole 121 provided in the upper interface structure 112 engages with the guide pin 96 provided in the third surface 93 of the main interface unit 70. With the third surface 93 in contact with the surface of the upper interface structure 112 opposite to the third surface 93 (the surface on the negative Z-axis direction), the main interface unit 70 is secured to the upper interface structure 112. Similarly, regarding the lower unit 103, the lower unit 103 is moved from the negative Z-axis direction to the positive Z-axis direction, so that the guide hole 121 provided in the lower interface structure 113 engages with the guide pin 96 provided in the fourth surface 94 of the main interface unit 70. With the fourth surface 94 and the lower interface structure 113 in contact with the surface opposite to the fourth surface 94 (the surface on the positive Z-axis side), the main interface unit 70 and the lower interface structure 113 are fastened together. The fastening method is not particularly limited and can be achieved through known clamping mechanisms or bolts.

[0053] With the third surface 93 of the main interface unit 70 fastened to the upper unit 102, the port 97 of the third surface 93 contacts the port 122 of the upper interface structure 112, and they are connected in a sealed state, isolating them from external air using the sealing ring 125. Furthermore, the connector 98 of the third surface 93 contacts and connects to the connector 123 of the upper interface structure 112. Similarly, with the fourth surface 94 of the main interface unit 70 fastened to the lower unit 103, the port 97 of the fourth surface 94 contacts the port 122 of the lower interface structure 113, and they are connected in a sealed state, isolating them from external air using the sealing ring 125. Furthermore, the connector 98 of the fourth surface 94 contacts and connects to the connector 123 of the lower interface structure 113.

[0054] For example, the middle unit 101, the upper unit 102, and the lower unit 103 are installed in the main interface unit 70. Figure 2 As shown.

[0055] <Substrate Processing Module>

[0056] (First Implementation)

[0057] Figure 6 This is a diagram illustrating an example of the structure of the substrate processing module 60 in the first embodiment. Figure 6The diagram shows a cross-sectional view of the substrate processing module 60 with the intermediate unit 101, upper unit 102, and lower unit 103 installed in the main interface unit 70. The substrate processing module 60 of this embodiment constitutes a capacitively coupled plasma processing apparatus. The substrate processing module 60 includes a plasma processing chamber 200 (hereinafter referred to as chamber 200), a substrate support 201, and a plasma generation unit. The substrate processing module 60 has a plasma processing space 200s that serves as the internal space of the chamber 200. Furthermore, the chamber 200 has at least one gas supply port for supplying at least one processing gas from a gas chamber 80 to the plasma processing space, and at least one carbon-containing gas outlet for discharging gas from the plasma processing space 200s. The gas supply port is connected to the gas chamber 80, and the gas outlet is connected to the exhaust system 202 described later. The substrate support 201 is disposed within the plasma processing space and has a substrate support surface for supporting a substrate.

[0058] The substrate processing module 60 includes an upper housing 203 located above the chamber 200 and a lower housing 204 located below the chamber 200. In one embodiment, the upper housing 203 may be equipped with various devices, such as an electrical assembly unit, configured to control the substrate processing module 60. Furthermore, in one embodiment, the lower housing 204 is equipped with a power supply 205 that supplies electrical power to the substrate processing module 60.

[0059] The electrical assembly unit of the control substrate processing module 60 included in the upper housing 203 transmits and receives signals to the chamber 200 and the lower housing 204 via signal cable 206. Signal cable 206 connects from the upper housing 203 to the chamber 200 via upper interface structure 112, main interface unit 70, and intermediate interface structure 111. Specifically, connectors 98 in the upper interface structure 112, main interface unit 70, and intermediate interface structure 111 include connectors along the path of signal cable 206. Furthermore, signal cable 206 connects from the upper housing 203 to the chamber 200 via upper interface structure 112, main interface unit 70, and lower interface structure 113. Specifically, connector 123 in the lower interface structure 113 includes connectors along the path of signal cable 206.

[0060] The plasma generation unit is configured to generate plasma from at least one processing gas supplied to the plasma processing space within 200 s. The plasma formed in the plasma processing space can be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), electron-cyclotron-resonance plasma (ECR), helicon wave plasma (HWP), or surface wave plasma (SWP), etc. Furthermore, various types of plasma generation units, including AC (Alternating Current) plasma generation units and DC (Direct Current) plasma generation units, can be used. In one embodiment, the AC signal (AC power) used in the AC plasma generation unit has a frequency in the range of 100 kHz to 10 GHz. Therefore, the AC signal includes RF (Radio Frequency) signals and microwave signals. In one embodiment, the RF signal has a frequency in the range of 100 kHz to 150 MHz.

[0061] The gas tank 80 may include at least one gas source and at least one flow controller. In one embodiment, the gas tank 80 is configured to supply at least one process gas from its respective gas source to the spray head 210 via its respective flow controller. Each flow controller may include, for example, a mass flow controller or a pressure-controlled flow controller. Furthermore, the gas tank 80 may include at least one flow modulation device for modulating or pulsed the flow rate of the at least one process gas.

[0062] Gas is supplied from gas tank 80 to spray head 210 via... Figure 6 The flow path 211 is represented by a medium-thick dotted line. The flow path 211 is configured to run from the gas tank 80 through the main interface unit 70 and the upper interface structure 112. That is, the port 97 in the main interface unit 70 and the port 122 in the upper interface structure 112 include the port of the flow path 211.

[0063] The substrate processing module 60 includes a gas inlet. The gas inlet is configured to introduce at least one processing gas supplied from the gas chamber 80 into the chamber 200. The gas inlet includes a spray head 210. The spray head 210 is disposed above the substrate support portion 201. The substrate support portion 201 is disposed within the chamber 200 and fixed to the bottom wall 200b. The spray head 210 constitutes at least a portion of the upper wall structure of the chamber 200, which serves as the ceiling of the chamber. The plasma processing space 200s is defined by the spray head 210, which serves as the upper wall structure of the chamber, a side wall 200a, which serves as the side wall structure of the chamber, and a bottom wall 200b, which serves as the bottom wall structure of the chamber. The chamber 200 is grounded. The spray head 210 and the substrate support portion 201 are electrically insulated from the housing of the chamber 200.

[0064] The spray head 210 has at least one gas supply port 210a, at least one gas diffusion chamber 210b, and a plurality of gas inlets 210c. Processing gas supplied to the gas supply port 210a is introduced into the plasma processing space 200s through the gas diffusion chamber 210b and the plurality of gas inlets 210c. Furthermore, the spray head 210 includes at least one upper electrode. In addition to the spray head 210, the gas inlet may also include one or more side gas injectors (SGIs) installed in one or more openings formed in the sidewall 200a.

[0065] The spray head 210 includes a flow path 212. A heat transfer fluid such as brine or gas flows through the flow path 212. The heat transfer fluid is supplied from a heat transfer fluid supply section (not shown) or discharged from the flow path 212 to the heat transfer fluid supply section. The supply of heat transfer fluid from the heat transfer fluid supply section or the discharge of heat transfer fluid to the heat transfer fluid supply section is achieved via… Figure 6 The flow path 213 is indicated by the thick solid line. The flow path 213 is configured to flow from the heat transfer fluid supply section through the main interface unit 70 and the upper interface structure 112. That is, the port 97 in the main interface unit 70 and the port 122 in the upper interface structure 112 include the port of the flow path 213.

[0066] The substrate support portion 201 includes a main body portion 221 and a ring assembly 222. The main body portion 221 has a central region 221a for supporting a substrate W and an annular region 221b for supporting the ring assembly 222. A wafer is an example of a substrate W. The annular region 221b of the main body portion 221 surrounds the central region 221a of the main body portion 221 when viewed from above. The substrate W is disposed on the central region 221a of the main body portion 221, and the ring assembly 222 is disposed on the annular region 221b of the main body portion 221 in such a way that it surrounds the substrate W on the central region 221a of the main body portion 221. Therefore, the central region 221a is also referred to as a substrate support surface for supporting the substrate W, and the annular region 221b is also referred to as an annular support surface for supporting the ring assembly 222.

[0067] In one embodiment, the main body 221 includes a base and an electrostatic chuck. The base includes a conductive component. The conductive component of the base can function as a lower electrode. The electrostatic chuck is disposed on the base. The electrostatic chuck includes a ceramic component and an electrostatic electrode disposed within the ceramic component. The ceramic component has a central region 221a. In one embodiment, the ceramic component also has an annular region 221b. Additionally, other components surrounding the electrostatic chuck, such as an annular electrostatic chuck or an annular insulating component, may also have an annular region 221b. In this case, the ring assembly 222 may be disposed on the annular electrostatic chuck or the annular insulating component, or on both the electrostatic chuck and the annular insulating component. Furthermore, at least one RF / DC electrode coupled to the RF power supply 231 and / or DC power supply 232 described later may be disposed within the ceramic component. In this case, at least one RF / DC electrode functions as a lower electrode. When a bias RF signal and / or DC signal described later are supplied to at least one RF / DC electrode, the RF / DC electrode is also referred to as a bias electrode. Additionally, the conductive components of the substrate and at least one RF / DC electrode can function as multiple lower electrodes. Furthermore, an electrostatic electrode can function as a lower electrode. Therefore, the substrate support 201 includes at least one lower electrode. In one embodiment, the aforementioned electrical assembly unit includes a chuck power source (not shown), configured to apply a chuck voltage to the electrostatic electrode. In another embodiment, the RF unit described later includes a chuck power source (not shown), configured to apply a chuck voltage to the electrostatic electrode.

[0068] The ring assembly 222 includes one or more annular components. In one embodiment, the one or more annular components include one or more edge rings and at least one cover ring. The edge rings are formed of a conductive or insulating material, and the cover ring is formed of an insulating material.

[0069] Furthermore, the substrate support 201 may include a temperature control module configured to adjust at least one of the electrostatic chuck, ring assembly 222, and substrate W to a target temperature. The temperature control module may include a heater, a heat transfer medium, a flow path 223, or a combination thereof. A heat transfer fluid such as brine or gas flows in the flow path 223. The heat transfer fluid is supplied to or discharged from the flow path 223 to the heat transfer fluid supply section (not shown). The supply of heat transfer fluid to or discharge of heat transfer fluid from the heat transfer fluid supply section is achieved via… Figure 6 The flow path 224 is shown by the thick solid line. In one embodiment, the flow path 223 is formed within the base, and one or more heaters are disposed within the ceramic component of the electrostatic chuck.

[0070] Furthermore, the substrate support portion 201 is configured to supply heat transfer gas to the gap between the back surface of the substrate W and the central region 221a. The heat transfer gas is supplied to, or discharged from, the gap to the heat transfer gas supply portion (not shown). The supply or discharge of heat transfer gas from the heat transfer gas supply portion is via... Figure 6 The thick dashed line indicates the flow path 225. The heat transfer gas includes inactive gases such as helium.

[0071] Flow paths 224 and 225 are configured to flow from the heat transfer fluid supply section and the heat transfer gas supply section through the main interface unit 70 and the lower interface structure 113. That is, the port 97 in the main interface unit 70 and the port 122 in the lower interface structure 113 include the ports of flow paths 224 and 225.

[0072] The power supply 205, as an example of an RF unit in this embodiment, includes an RF power supply 231 coupled to the chamber 200 via at least one impedance matching circuit. The RF power supply 231 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. As a result, at least one processing gas supplied to the plasma processing space 200s forms plasma. Therefore, the RF power supply 231 can function as at least part of the plasma generation unit. Furthermore, by supplying a bias RF signal to at least one lower electrode, a bias potential can be generated on the substrate W, attracting the ionic components in the formed plasma to the substrate W.

[0073] In one embodiment, the RF power supply 231 includes a first RF generation unit 231a and a second RF generation unit 231b. The first RF generation unit 231a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit, and is configured to generate a generation source RF signal (generation source RF power) for plasma generation. The generation source RF signal is transmitted via... Figure 6The coaxial cable 233, indicated by the bold dashed line, is supplied. In one embodiment, the source RF signal has a frequency in the range of 10MHz to 150MHz. In one embodiment, the first RF generation unit 231a may be configured to generate multiple source RF signals with different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0074] The second RF generation unit 231b is coupled to at least one lower electrode via at least one impedance matching circuit and is configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generation unit 231b may be configured to generate multiple bias RF signals with different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. Furthermore, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0075] Furthermore, the power supply 205 may include a DC power supply 232 coupled to the chamber 200. The DC power supply 232 includes a first DC generating unit 232a and a second DC generating unit 232b. In one embodiment, the first DC generating unit 232a is connected to at least one lower electrode and configured to generate a first DC signal. The generated first DC signal is applied to at least one lower electrode. In another embodiment, the second DC generating unit 232b is connected to at least one upper electrode and configured to generate a second DC signal. The generated second DC signal is applied to at least one upper electrode.

[0076] In various embodiments, the first DC signal and the second DC signal can be pulsed. In this case, a voltage pulse sequence is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses can have rectangular, trapezoidal, triangular, or combinations thereof pulse waveforms. In one embodiment, a waveform generation unit for generating the voltage pulse sequence from the DC signal is connected between the first DC generation unit 232a and at least one lower electrode. Therefore, the first DC generation unit 232a and the waveform generation unit constitute a voltage pulse generation unit. When the second DC generation unit 232b and the waveform generation unit constitute a voltage pulse generation unit, the voltage pulse generation unit is connected to at least one upper electrode. The voltage pulses can have positive or negative polarity. Furthermore, the voltage pulse sequence can include one or more positive voltage pulses and one or more negative voltage pulses within one cycle. Additionally, the first DC generation unit 232a and the second DC generation unit 232b can be provided in addition to the RF power supply 231, or the first DC generation unit 232a can be provided in place of the second RF generation unit 231b.

[0077] The exhaust system 202 can be connected to, for example, a gas outlet 200e located at the bottom of the chamber 200. The exhaust system 202 is an example of the exhaust unit of this embodiment and constitutes at least a portion of the exhaust pipeline of this embodiment. The exhaust system 202 may include a pressure regulating valve and a vacuum pump. The pressure regulating valve allows for adjustment of the pressure within the plasma processing space 200s. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0078] <Middle unit 101, upper unit 102 and lower unit 103>

[0079] The structure of the intermediate unit 101, upper unit 102, and lower unit 103 in the substrate processing module 60 of the first embodiment will be described below. As described above, the substrate processing module 60 includes at least the intermediate unit 101, upper unit 102, and lower unit 103, which can be detachably mounted to the main interface unit 70. Furthermore, the intermediate unit 101, upper unit 102, and lower unit 103 are detachably mounted to each other.

[0080] Figure 7 This is a diagram illustrating a structural example of the intermediate unit 101, upper unit 102, and lower unit 103 in the substrate processing module 60 of the first embodiment. Figure 7 In the middle, the substrate processing module 60 is removed from the main interface unit 70, and the middle unit 101, the upper unit 102 and the lower unit 103 are separated.

[0081] The intermediate unit 101 includes a chamber sidewall 200a and a substrate support 201. The upper unit 102 includes an upper housing 203 and a spray head 210. That is, in this embodiment, the electrical unit included in the upper housing 203 is included in the upper unit 102. The lower unit 103 includes a gas outlet 200e, an exhaust system 202, and a lower housing 204. That is, in this embodiment, the RF unit included in the lower housing 204 is included in the lower unit 103.

[0082] A sealing ring 241 is provided on the outer peripheral upper surface of the chamber sidewall 200a in the intermediate unit 101. When the intermediate unit 101 and the upper unit 102 are fastened, the chamber sidewall 200a contacts the spray head 210, and they are connected in a state where they are sealed from external air by the sealing ring 241. Furthermore, a sealing ring 242 is provided on the outer peripheral upper surface of the housing of the lower unit 103, at a corresponding position on the lower surface of the chamber sidewall 200a. When the intermediate unit 101 and the lower unit 103 are fastened, the chamber sidewall 200a contacts the housing of the lower unit 103, and they are connected in a state where they are sealed from external air by the sealing ring 242.

[0083] In the lower unit 103, a sealing ring 242 is provided at a position corresponding to the lower surface of the chamber sidewall 200a. When the middle unit 101 and the lower unit 103 are fastened, the chamber sidewall 200a contacts the housing of the lower unit 103, and they are connected in a sealed state that isolates them from the outside air by means of the sealing ring 242.

[0084] Flow paths 224 and 225 are respectively provided with ports 243 on the lower surface of the intermediate unit 101 and the upper surface of the lower side unit 103. When the intermediate unit 101 and the lower side unit 103 are separated, they are separated at their respective ports 243. A sealing ring is provided at the port 243 on the upper surface of the lower side unit 103. When the intermediate unit 101 and the lower side unit 103 are fastened, the lower surface of the intermediate unit 101 contacts the upper surface of the lower side unit 103, and the ports 243 of the flow paths 224 and 225 are connected in a sealed state, isolating them from the outside air by the sealing ring.

[0085] The coaxial cable 233 has connectors 244 on the lower surface of the intermediate unit 101 and the upper surface of the lower side unit 103. When the intermediate unit 101 and the lower side unit 103 are separated, they are separated at the connectors 244. When the intermediate unit 101 and the lower side unit 103 are fastened, the lower surface of the intermediate unit 101 contacts the upper surface of the lower side unit 103, and the coaxial cable 233 is connected at the connectors 244.

[0086] (Second Implementation)

[0087] The structure of the intermediate unit 101, upper unit 102 and lower unit 103 in the substrate processing module 60 of the second embodiment will be described below. Figure 8 and Figure 9 This is a diagram illustrating a structural example of the intermediate unit 101, upper unit 102, and lower unit 103 in the substrate processing module 60 of the second embodiment. Figure 8 This shows the state in which the units of the substrate processing module 60 are secured and installed on the main interface unit 70. Furthermore, Figure 9 The diagram shows the substrate processing module 60 being removed from the main interface unit 70, and the middle unit 101, upper unit 102, and lower unit 103 being separated.

[0088] The substrate processing module 60 of the second embodiment differs from that of the first embodiment in the structure of the intermediate unit 101 and the lower unit 103. The intermediate unit 101 includes a chamber sidewall 200a, a gas outlet 200e, and a substrate support portion 201. The lower unit 103 includes an exhaust system 202 and a lower housing 204. The structure of the upper unit 102 is the same as that of the first embodiment.

[0089] In the intermediate unit 101 of the second embodiment, flow paths 224 and 225 are configured to flow from the heat transfer fluid supply unit and the heat transfer gas supply unit through the main interface unit 70 and the intermediate interface structure 111. That is, the port 97 in the main interface unit 70 and the port 122 in the intermediate interface structure 111 include the ports of flow paths 224 and 225.

[0090] (Third Implementation)

[0091] The structure of the intermediate unit 101, upper unit 102 and lower unit 103 in the substrate processing module 60 of the third embodiment will be described below. Figure 10 and Figure 11 This is a diagram illustrating a structural example of the intermediate unit 101, upper unit 102, and lower unit 103 in the substrate processing module 60 of the third embodiment. Figure 10 This shows the state in which the units of the substrate processing module 60 are secured and installed on the main interface unit 70. Furthermore, Figure 11 The diagram shows the substrate processing module 60 being removed from the main interface unit 70, and the middle unit 101, upper unit 102, and lower unit 103 being separated.

[0092] The intermediate unit 101 of the third embodiment includes a chamber sidewall 200a and a substrate support 201. The upper unit 102 includes a spray head 210. The lower unit 103 includes a gas outlet 200e and an exhaust system 202. In one embodiment, the upper housing 203, which includes the electrical assembly unit, is mounted on the rack of the substrate processing module 60, positioned above the upper unit 102. Furthermore, the lower housing, which includes the RF unit, is mounted on the rack of the substrate processing module 60, positioned below the lower unit 103.

[0093] In the third embodiment, the coaxial cable 233 connects from the upper housing 203 to the upper electrode via the main interface unit 70 and the upper interface structure 112. That is, the connector 98 in the main interface unit 70 and the connector 123 in the upper interface structure 112 include connectors for the coaxial cable 233. Furthermore, the coaxial cable 233 connects from the lower housing 204 to the lower electrode via the main interface unit 70 and the lower interface structure 113. That is, the connector 98 in the main interface unit 70 and the connector 123 in the lower interface structure 113 include connectors for the coaxial cable 233.

[0094] The structure of flow path 224 and flow path 225 connecting the intermediate unit 101 and the lower unit 103 is the same as in the first embodiment.

[0095] (Maintenance Method)

[0096] The substrate processing module 60 of the various embodiments described above allows for the removal of only any unit of the components containing the substrate processing module 60 that requires maintenance, and the installation of a new unit. Furthermore, in this specification, maintenance includes the initial installation of the substrate processing module 60 into the substrate processing system, as well as procedures such as inspection, cleaning, repair, or replacement.

[0097] As an example, let's illustrate a situation where the intermediate unit 101 in the substrate processing module 60 requires maintenance. First, the upper unit 102 and the lower unit 103 are removed from the main interface unit 70. The removed upper unit 102 and lower unit 103 can be held by a desired trolley or crane, etc. Next, the intermediate unit 101 is removed from the main interface unit 70. Next, the removed intermediate unit 101 is transported from the substrate processing system to the outside. Next, another intermediate unit 101 of the same type, which has already undergone maintenance, is transported from the outside to the substrate processing system. Next, this other intermediate unit 101 is installed into the main interface unit 70. Next, the removed upper unit 102 and lower unit 103 are installed into the main interface unit 70. Afterward, the removed intermediate unit 101 can be maintained.

[0098] The same applies to situations where the upper unit 102 or the lower unit 103 requires maintenance.

[0099] According to the maintenance method described above, only one unit of the component containing the substrate processing module 60 that requires maintenance can be removed, and another unit of the same type that has already been maintained can be installed, thereby replacing the unit. This allows for simple and quick maintenance of the substrate processing module 60, reducing the time the substrate processing module 60 is unusable and suppressing a decrease in the overall productivity of the substrate processing system.

[0100] Furthermore, according to the substrate processing module 60 of various embodiments, multiple resource supply lines are configured to pass through the main interface unit 70 and each interface structure. Specifically, as described above, the main interface unit 70 is connected to the multiple resource supply lines. Furthermore, the upper interface structure 112 is configured to supply at least one first resource from at least one of the multiple resource supply lines to the upper wall structure of the chamber via the main interface unit. Furthermore, the lower interface structure is configured to supply at least one second resource from at least one of the multiple resource supply lines to the lower wall structure of the chamber via the main interface unit.

[0101] Furthermore, the various resource supply pipelines in different embodiments include the aforementioned flow path 211 for supplying processing gas from the gas tank 80, flow paths 212, 224, and 225 for temperature regulation of heat transfer fluid or supply of heat transfer gas, a coaxial cable 233 for supplying RF signals to the upper or lower electrode, and a signal cable 206 for supplying control signals. In other words, the resources from the multiple resource supply pipelines include at least one selected from electrical power including RF signals and control signals, air, gas, water, and refrigerant for device driving. In this invention, the term "resource supply pipeline" indicates that the pipeline may include not only structures for supplying resources, but also structures for discharging gases, heat transfer fluids, etc., and outputting signals.

[0102] Therefore, when installing or removing the substrate processing module 60 from the main interface unit 70 during maintenance, the disassembly and reassembly of various flow paths and cables are concentrated on the disassembly and reassembly of the main interface unit 70. As a result, work efficiency is improved during replacement, maintenance is made more labor-saving and automated, and maintenance can be performed quickly.

[0103] The embodiments disclosed herein should be considered illustrative rather than restrictive in all respects. The above embodiments may be omitted, substituted, or modified in various forms without departing from the scope and spirit of the claims. For example, the constituent elements of the above embodiments can be arbitrarily combined. From such arbitrary combinations, the functions and effects of each constituent element related to the combination can be naturally obtained, and other functions and effects that are obvious to those skilled in the art according to the description herein can also be obtained.

[0104] Furthermore, the effects described in this specification are ultimately illustrative or exemplary, and not restrictive. That is to say, the technology of this invention, in addition to, or instead of, the effects described herein, can achieve other effects that are obvious to those skilled in the art.

[0105] Explanation of reference numerals in the attached figures

[0106] 1. Substrate processing device

[0107] 40 Vacuum Conveying Module

[0108] 60 Substrate Processing Module

[0109] 70 Main Interface Unit

[0110] 91 First Page

[0111] 92 Second page

[0112] 93 Third page

[0113] 94 Page 4

[0114] 101 Intermediate Unit

[0115] 101a upper surface

[0116] 101b lower surface

[0117] 102 Upper unit

[0118] 103 Lower unit

[0119] 111 Intermediate Interface Structure

[0120] 112 Upper Interface Structure

[0121] 113 Lower Interface Structure

[0122] 200 chambers

[0123] 200a sidewall

[0124] 200b bottom wall

[0125] 200e Gas Exhaust Port

[0126] 200s plasma processing space

[0127] 210 Sprayer head.

Claims

1. A substrate processing system, comprising: Comprising: a vacuum transfer module; a main interface unit having a first face connected with the vacuum transfer module, a second face located on an opposite side of the first face, an upper surface, and a lower surface; and a substrate processing module, the substrate processing module comprising: a replaceable intermediate chamber unit having an upper surface and a lower surface; a replaceable upper side chamber unit removably connectable with the upper surface of the replaceable intermediate chamber unit; and a replaceable lower side chamber unit removably connectable with the lower surface of the replaceable intermediate chamber unit, the replaceable intermediate chamber unit comprising: a chamber side wall structure defining an internal space; a substrate support portion disposed within the internal space; and an intermediate interface structure removably connectable with the second face of the main interface unit, the replaceable upper side chamber unit comprising: a chamber upper wall structure defining the internal space, having a gas introduction port for introducing a processing gas into the internal space; and an upper side interface structure removably connectable with the upper surface of the main interface unit, the replaceable lower side chamber unit comprising: a chamber bottom wall structure defining the internal space, having a gas exhaust port for exhausting a gas within the internal space; and a lower side interface structure removably connectable with the lower surface of the main interface unit.

2. The substrate processing system according to claim 1, wherein: the main interface unit is connected with a plurality of resource supply lines, the upper side interface structure is configured to supply at least one first resource from at least one of the plurality of resource supply lines to the chamber upper wall structure via the main interface unit, the lower side interface structure is configured to supply at least one second resource from at least one of the plurality of resource supply lines to the chamber bottom wall structure via the main interface unit.

3. The substrate processing system according to claim 2, wherein: the at least one first resource and the at least one second resource include at least one selected from the group consisting of electric power, air, a gas, water, and a refrigerant.

4. The substrate processing system according to claim 3, wherein: the gas includes a non-reactive gas.

5. The substrate processing system according to claim 3, wherein: the main interface unit is connectable with an exhaust line, the upper side interface structure is configured to exhaust a gas within the internal space from the chamber upper wall structure to the exhaust line via the main interface unit.

6. The substrate processing system according to claim 3, wherein: the main interface unit is connectable with an exhaust line, the lower side interface structure is configured to exhaust a gas within the internal space from the chamber bottom wall structure to the exhaust line via the main interface unit.

7. The substrate processing system according to claim 3, wherein: the substrate processing module includes an exhaust unit configured to exhaust a gas within the internal space via the chamber bottom wall structure.

8. The substrate processing system according to any one of claims 1 to 7, wherein: the substrate processing module includes a gas box unit, the processing gas is supplied from the gas box unit into the internal space via the main interface unit and the gas inlet port of the chamber upper wall structure.

9. The substrate processing system according to claim 8, wherein: the gas box unit is installed to a rack of the substrate processing module in a manner of being disposed above the vacuum transport module.

10. The substrate processing system according to any one of claims 1 to 7, wherein: the substrate processing module includes an electric equipment unit configured to control the substrate processing module.

11. The substrate processing system according to claim 10, wherein: the electric equipment unit is included in the replaceable upper chamber unit.

12. The substrate processing system according to claim 10, wherein: the electric equipment unit is installed to a rack of the substrate processing module in a manner of being disposed above the replaceable upper chamber unit.

13. The substrate processing system according to claim 10, wherein: the substrate support section includes an electrostatic chuck, the electric equipment unit includes a chuck power supply configured to apply a chuck voltage to the electrostatic chuck.

14. The substrate processing system according to any one of claims 1 to 7, wherein: the substrate processing module includes an RF unit configured to electrically connect with at least one of the chamber upper wall structure and the chamber bottom wall structure and to generate RF electric power.

15. The substrate processing system according to claim 14, wherein: the RF unit is included in the replaceable lower chamber unit.

16. The substrate processing system according to claim 14, wherein: the RF unit is installed to a rack of the substrate processing module in a manner of being disposed below the replaceable lower chamber unit.

17. The substrate processing system according to claim 14, wherein: the RF unit includes a voltage pulse generator configured to generate a voltage pulse.

18. The substrate processing system according to claim 14, wherein: the substrate support section includes an electrostatic chuck, the RF unit includes a chuck power supply configured to apply a chuck voltage to the electrostatic chuck.

19. A substrate processing apparatus, characterized by, including: a replaceable intermediate chamber unit having a substrate processing space; a replaceable upper chamber unit removably connectable above the substrate processing space; a replaceable lower chamber unit removably connectable below the substrate processing space; and an interface unit connectable with a plurality of resource supply lines, ​ The interface unit is configured to supply at least one first resource from at least one of the plurality of resource supply lines to the replaceable upper chamber unit via the interface unit and is configured to supply at least one second resource from at least one of the plurality of resource supply lines to the replaceable lower chamber unit via the interface unit.

20. The substrate processing apparatus of claim 19, wherein: The at least one first resource and the at least one second resource comprise at least one selected from the group consisting of electrical power, air, gas, water, and refrigerant.

Images