Composite material, composition, preparation method and photoelectric device

Abstract

The invention belongs to the technical field of display, and relates to a composite material, a composition, a preparation method and a photoelectric device.The composite material comprises magnetic particles, ligands and inorganic nanoparticles, and the inorganic nanoparticles are connected with the magnetic particles through the ligands. When the composite material is used for preparing a thin film, the film forming uniformity can be improved.

Description

Technical Field

[0001] This application relates to the field of display technology, and more specifically, to a composite material, composition and preparation method thereof, and optoelectronic device. Background Technology

[0002] Quantum dot light-emitting diodes (QLEDs) are a new type of display technology that has emerged rapidly in recent years. Quantum dot light-emitting diodes are devices that use colloidal quantum dots as the light-emitting layer. By introducing the quantum dot light-emitting layer between different conductive materials, light of the desired wavelength can be obtained.

[0003] In the existing technology, solution methods are usually used to prepare the various functional layers of optoelectronic devices. However, the uniformity of existing carrier functional layer films is poor and needs further improvement. Summary of the Invention

[0004] To address the aforementioned technical problems, this application provides a composite material, which employs the following technical solution:

[0005] A composite material comprising magnetic particles, ligands, and inorganic nanoparticles, wherein the inorganic nanoparticles are connected to the magnetic particles via the ligands.

[0006] Accordingly, this application provides a composition comprising a solvent and the composite material as described above.

[0007] Accordingly, this application provides a method for preparing a composition, the method comprising the following preparation steps:

[0008] A mixture comprising a first magnetic particle, a ligand, and a first solvent is provided, the mixture undergoing a first reaction to obtain a second magnetic particle, the second magnetic particle comprising the first magnetic particle having the ligand attached to its surface;

[0009] A second solvent and inorganic nanoparticles are provided, and the second magnetic particle, the second solvent and the inorganic nanoparticles are mixed to carry out a second reaction to obtain the composition.

[0010] Accordingly, this application provides a thin film prepared using the composite material described above, or the thin film prepared using the composition described above.

[0011] Accordingly, this application provides a method for preparing a thin film, the method comprising the following preparation steps:

[0012] Provide the composition as described above;

[0013] The composition is deposited to form the thin film in an environment with a magnetic field.

[0014] Accordingly, this application provides an optoelectronic device, which includes a first electrode, a carrier functional layer and a second electrode stacked together.

[0015] The carrier functional layer comprises multiple stacked functional sublayers, and at least one of the functional sublayers is a thin film as described above, or a thin film prepared by the thin film preparation method described above.

[0016] Accordingly, this application provides a display device, which includes the optoelectronic device described above.

[0017] Compared with the prior art, the embodiments of this application have the following advantages: the film prepared by using the composite material of this application can improve the film uniformity. Attached Figure Description

[0018] To more clearly illustrate the solutions in this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this application. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0019] Figure 1 This is a flowchart of the composition preparation method according to an embodiment of this application;

[0020] Figure 2 This is a flowchart of a thin film preparation method according to an embodiment of this application;

[0021] Figure 3 This is a structural diagram of the optoelectronic device according to an embodiment of this application.

[0022] Figure label:

[0023] 1. First electrode; 2. Hole functional layer; 3. Light-emitting layer; 4. Electron functional layer; 5. Second electrode. Detailed Implementation

[0024] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application. Furthermore, it should be understood that the specific embodiments described herein are only for illustration and explanation of this application and are not intended to limit this application.

[0025] In this application, unless otherwise stated, directional terms such as "upper" and "lower" generally refer to the upper and lower positions of the device in its actual use or operating state, specifically the orientation shown in the accompanying drawings; while "inner" and "outer" refer to the outline of the device. Furthermore, in the description of this application, the term "comprising" means "including but not limited to". The terms first, second, third, etc., are used merely as illustrative purposes and do not impose numerical requirements or establish a numerical order.

[0026] In this application, "and / or" describes the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, or B existing alone. A and B can be singular or plural.

[0027] In this application, "at least one" means one or more, and "more than one" means two or more. "At least one," "at least one of the following," or similar expressions refer to any combination of these items, including any combination of single or multiple items. For example, "at least one of a, b, or c," or "at least one of a, b, and c," can both mean: a, b, c, ab (i.e., a and b), ac, bc, or abc, where a, b, and c can be single or multiple.

[0028] Various embodiments of this application may exist in the form of a range; it should be understood that the description in the form of a range is merely for convenience and brevity and should not be construed as a hard limitation on the scope of this application; therefore, it should be considered that the range description has specifically disclosed all possible sub-ranges and single numerical values ​​within that range. For example, it should be considered that the range description from 1 to 6 has specifically disclosed sub-ranges such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., and single numbers within the range, such as 1, 2, 3, 4, 5, and 6, regardless of the range. Furthermore, whenever a numerical range is referred to herein, it means including any referenced number (fraction or integer) within the referred range.

[0029] In existing optoelectronic devices, the uniformity of carrier functional layer film formation is poor and needs further improvement.

[0030] To address the aforementioned issues, this application provides a composite material comprising magnetic particles, ligands, and inorganic nanoparticles, wherein the inorganic nanoparticles are connected to the magnetic particles via the ligands.

[0031] In this embodiment, the composite material includes magnetic particles, ligands, and inorganic nanoparticles. The magnetic particles have good paramagnetism and are magnetized under a magnetic field, moving with changes in the magnetic field. The inorganic nanoparticles are bound to the surface of the magnetic particles through the ligands. During the movement of the magnetic particles in the magnetic field, they can drive the inorganic nanoparticles and the ligands to move together. With the composite material as the solute, a liquid film is prepared from the composite material using a solution method, and an external magnetic field is applied to the liquid film. The solute in the liquid film moves due to the magnetization of the magnetic particles, thereby breaking the concentration gradient distribution of the solute in the liquid film. The solute distribution in the liquid film is more uniform, which can improve the film uniformity and thus improve the performance of optoelectronic devices. Furthermore, the ligands can tightly bridge inorganic nanoparticles to the surface of magnetic particles, and the inorganic nanoparticles on the surface layer are in close contact to form conductive channels, allowing charge carriers to transport freely within these channels. At the same time, since an interfacial barrier is formed between the inorganic nanoparticles and the magnetic particles, this barrier will hinder the transport of charge carriers from the inorganic nanoparticles to the magnetic particles, causing the charge carriers to transport within the inorganic nanoparticles on the surface of the composition. This transport path helps to reduce energy loss and scattering of charge carriers during transport, thereby improving the carrier mobility.

[0032] Furthermore, the ligand has the structure R1-L-R2, where L is a linking group, R1 is bonded to the surface of the magnetic particles, and R2 is bonded to the surface of the inorganic nanoparticles.

[0033] In this embodiment, R1 has a strong affinity for the surface of the magnetic particles and can be tightly bound to the surface of the magnetic particles through coordination bonds, halogen bridge bonds, or ionic bonds; R2 has a strong affinity for the surface of the inorganic nanoparticles and can be tightly bound to the surface of the inorganic nanoparticles through coordination bonds, halogen bridge bonds, or ionic bonds. The magnetic particles, ligands, and inorganic nanoparticles are firmly bonded together. During the rapid movement of the composition under a magnetic field, the inorganic nanoparticles and magnetic particles are not easily detached from the ligands, which can reduce the large aggregates formed due to the phase separation of inorganic nanoparticles and magnetic particles, thereby improving the roughness and uniformity of the film, and increasing the carrier mobility and luminous efficiency of the optoelectronic device.

[0034] In some embodiments, R1 and R2 are each independently selected from at least one of cyano, hydroxy, sulfonic acid, mercapto, phosphate, phosphine, amino, carboxyl, thiocyanate, and halogen atoms. In this embodiment, these groups have strong polarity or strong electronegativity and can form coordinate bonds, halogen bridge bonds, or ionic bonds with metal ions or metal atoms on the surface of inorganic nanoparticles and magnetic particles.

[0035] In some embodiments, L is selected from single bonds, substituted or unsubstituted C1-C bonds. 12 alkylene or C2-C12 The alkenyl group; when substituted, C1-C 12 alkylene or C2-C 12 One or more hydrogen atoms in the alkenyl group are independently substituted by at least one of a cyano group, hydroxyl group, sulfonic acid group, mercapto group, phosphate group, phosphin group, amino group, carboxyl group, thiocyanate group, and halogen atom, and / or, C2-C 12 alkylene or C3-C 12 One of the -CH2- groups or at least two non-adjacent -CH2- groups is replaced by -O-, -S-, -NH-, -NR3-, Or -C=C- is substituted in a manner that is not directly connected to each other, wherein R3 is a C1-C5 alkyl group that is either unsubstituted or substituted with at least one of a carboxyl, hydroxyl, or amino group.

[0036] In some embodiments, the number of main chain atoms of the ligand is 1 to 12. In this embodiment, the number of main chain atoms of the ligand is less than or equal to 12, the steric hindrance of the ligand is small, which is beneficial to the binding of the ligand to the magnetic particles.

[0037] Furthermore, the ligand is selected from at least one of ethanolamine, citric acid, EDTA, 1,2-diaminocyclohexane (DACH), diethanolamine, triethanolamine, diethylenetriamine, triethylenetetramine, NTA, and glutathione. In this embodiment, the composite material contains the above-mentioned ligands, which can bridge the magnetic particles and inorganic nanoparticles, resulting in a strong bond between the magnetic particles, ligands, and inorganic nanoparticles, which is beneficial to the dispersibility and stability of the magnetic particles and inorganic nanoparticles in the solvent.

[0038] In some embodiments, the magnetic particles are selected from at least one of elemental iron, iron oxides, iron alloys, elemental cobalt, cobalt oxides, cobalt alloys, elemental nickel, nickel oxides, and nickel alloys. Further, the magnetic particles are selected from at least one of Fe3O4, Fe2O3, NiO, CoO, FeCo, FeCr, MnFe2O4, FePt, CoFe2O4, ZnFe2O4, and NiFe2O4. These substances possess superparamagnetism and can be rapidly magnetized under the influence of an external magnetic field, driving the movement of inorganic nanoparticles within the magnetic field.

[0039] In some embodiments, the average particle size of the magnetic particles is 2nm to 50nm; specifically, the average particle size of the magnetic particles is any one or any two of the following: 2nm, 5nm, 10nm, 15nm, 20nm, 25nm, 30nm, 35nm, 40nm, 45nm, 50nm.

[0040] In some embodiments, the inorganic semiconductor material is selected from doped or undoped metal oxides, including one or more of vanadium oxide, molybdenum oxide, tungsten oxide, tantalum oxide, nickel oxide, germanium oxide, zinc oxide, barium oxide, aluminum oxide, nickel oxide, titanium oxide, tin oxide, tantalum oxide, and zirconium oxide. The doping element includes at least one of aluminum, magnesium, lithium, manganese, yttrium, lanthanum, copper, nickel, zirconium, cerium, and gadolinium. The mass percentage of the doping element in the inorganic nanoparticles is 0.01% to 50%. These materials exhibit good electrical conductivity when used to fabricate functional films for optoelectronic devices.

[0041] In some embodiments, the magnetic particles are superparamagnetic, and the inorganic semiconductor material is diamagnetic. The diamagnetic property enables the inorganic semiconductor material to maintain good stability in an external magnetic field environment, making it less susceptible to interference from changes in the magnetic field. This ensures that the inorganic semiconductor material can maintain good electron and / or hole transport performance even in an electromagnetic environment.

[0042] In some embodiments, the average particle size of the inorganic nanoparticles is 1 nm to 25 nm; specifically, the average particle size of the inorganic nanoparticles is any one or any two of 1 nm, 5 nm, 10 nm, 15 nm, 20 nm, 25 nm, etc.

[0043] In some embodiments, the average particle size of the composite material is 5 nm to 100 nm.

[0044] In some optional embodiments of this example, the average particle size of the composite material is within the range of any one or any two of the following: 5nm, 10nm, 20nm, 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, 90nm, 100nm.

[0045] In some embodiments, the mass ratio of the magnetic particles, the ligand, and the inorganic nanoparticles in the composite material is (5–30):(5–20):(50–90). Maintaining the mass percentages of the magnetic particles, ligands, and inorganic nanoparticles within the aforementioned range allows the inorganic nanoparticles to effectively bind to the magnetic particles without oversaturation.

[0046] In some optional embodiments of this example, the magnetic particles constitute a mass fraction of 5%, 10%, 15%, 20%, 25%, 30%, etc., or any two of these ranges; the ligands constitute a mass fraction of 5%, 8%, 11%, 14%, 17%, 20%, etc., or any two of these ranges; and the inorganic nanoparticles constitute a mass fraction of 50%, 55%, 60%, 65%, 70%, 75%, 80%, 85%, 90%, etc., or any two of these ranges.

[0047] In some embodiments, the saturation magnetization of the composite material is 5 emu / g to 200 emu / g. In this embodiment, the composite material can be rapidly magnetized under the action of an external magnetic field, and the composite material particles remain dispersed under the action of the magnetic field, which can improve the distribution uniformity of the composite material.

[0048] In some optional embodiments of this example, the saturation magnetization of the composite material is within the range of any one or any two of the following: 5 emu / g, 30 emu / g, 60 emu / g, 90 emu / g, 120 emu / g, 150 emu / g, 180 emu / g, 200 emu / g.

[0049] This application also provides a composition comprising a solvent and the composite material described above.

[0050] Furthermore, the solvent is selected from at least one of chlorobenzene, water, ethanol, methanol, acetone, isopropanol, toluene, hexane, chloroform, tetrahydrofuran, dimethyl sulfoxide, dimethylformamide, ethyl acetate, cyclohexane, dichloromethane, acetonitrile, diethyl ether, N-methyl-2-pyrrolidone (NMP), propylene glycol, glycerol, carbon tetrachloride, butanol, pentane-xylene, petroleum ether, dichloromethane, isopropyl acetate, 1,4-dioxane, propylene carbonate, ethyl lactate, dimethyl carbonate, phenethyl ether, formamide, isopropanol, diisopropyl ether, methyl ethyl ketone, methyl isobutyl ketone, pyridine, triethylamine, 1,2-dichloroethane, 1,2-dichloropropane, anisole, butyl acetate, cyclopentane, decane, diethyl carbonate, diethylene glycol, diisobutyl ketone, and dipropylene glycol.

[0051] In some embodiments, the solvent comprises 50% to 95% by mass and the composite material comprises 5% to 50% by mass, based on the total weight of the composition being 100%.

[0052] In some optional embodiments of this example, the mass percentage of the solvent is within the range of any one or any two of 50%, 60%, 70%, 80%, 90%, 95%, etc.; the mass percentage of the composite material is within the range of any one or any two of 5%, 10%, 15%, 20%, 25%, 30%, 35%, 40%, 45%, 50%, etc.

[0053] In some embodiments, the composition has a viscosity of 1 cP to 40 cP at 10-30°C and a surface tension of 10 dynes / cm to 50 dynes / cm at 10-30°C. These ranges of dynamic viscosity, surface tension, and pH value enable the composition to possess good flowability and stability, facilitating the preparation of functional films using solution methods (printing, spin coating, etc.).

[0054] In some optional embodiments of this example, the viscosity of the composition at 10-30°C is within the range of any one or any two of 1 cP, 5 cP, 10 cP, 15 cP, 20 cP, 25 cP, 30 cP, 35 cP, 40 cP, etc.; and the surface tension of the composition at 10-30°C is within the range of any one or any two of 10 dynes / cm, 15 dynes / cm, 20 dynes / cm, 30 dynes / cm, 40 dynes / cm, 50 dynes / cm, etc.

[0055] This application also provides a method for preparing the composition, such as... Figure 1 As shown, it includes the following steps:

[0056] S11. A mixture comprising a first magnetic particle, a ligand, and a first solvent is provided, the mixture undergoing a first reaction to obtain a second magnetic particle, the second magnetic particle comprising the first magnetic particle having the ligand attached to its surface.

[0057] Furthermore, in the first reaction, the temperature is 30–120°C, and the reaction time is 1–48 h. Preferably, stirring is used to promote the first reaction. This allows the magnetic particles and ligands to mix uniformly in the solvent, achieving uniform contact between them.

[0058] Furthermore, the mass ratio of the magnetic particles to the ligand in the mixture is 1:(1-20). This mass ratio allows the ligand to effectively bind to the magnetic particles.

[0059] Furthermore, the mixture after the first reaction is centrifuged to remove the supernatant and obtain the precipitate. The precipitate is then washed to obtain the second magnetic particles.

[0060] In some optional embodiments of this example, the mass ratio of the magnetic particles to the ligands in the mixture is any one or any two of the following: 1:1, 1:3, 1:6, 1:9, 1:12, 1:15, 1:18, 1:20, etc.

[0061] S12. Provide a second solvent and inorganic nanoparticles, mix the second magnetic particles, the second solvent and the inorganic nanoparticles to carry out a second reaction, and obtain the composition.

[0062] Further, in step S12, the inorganic nanoparticles or inorganic nanoparticle sol solution, the second magnetic particle, and the second solvent are mixed and stirred until the precipitate in the second mixed solution disappears, thus obtaining the composition. At this point, the end of the ligand that is not bound to the first magnetic particle can bind to the inorganic nanoparticle, that is, both ends of the ligand can bind to the inorganic nanoparticle and the first magnetic particle respectively, so that the inorganic nanoparticle is tightly bound to the first magnetic particle through the ligand and forms a composite material. This composition is used to prepare a liquid thin film via a solution method. An external magnetic field is then applied to the liquid thin film, causing the solute in the liquid film to move due to the magnetization of the magnetic particles. This disrupts the concentration gradient distribution of the solute in the liquid film, resulting in a more uniform solute distribution and improved film uniformity, thus enhancing the performance of optoelectronic devices. Furthermore, the ligands can tightly bridge multiple inorganic nanoparticles to the surface of the magnetic particles. The inorganic nanoparticles on the surface layer are in close contact, forming conductive channels that allow charge carriers to transport freely within these channels. Simultaneously, an interfacial barrier is formed between the inorganic nanoparticles and the magnetic particles, hindering the transport of charge carriers from the inorganic nanoparticles to the magnetic particles. This allows the charge carriers to transport within the inorganic nanoparticles on the surface of the composite material. This transport path helps reduce energy loss and scattering of charge carriers during transport, improving carrier mobility.

[0063] Furthermore, in the second reaction, the reaction temperature is 20℃~80℃, and the reaction time is 1h~48h. Preferably, stirring is used to promote the second reaction. Since inorganic nanoparticles have small particle sizes and generally poor stability, excessively high temperatures can easily cause nanoparticle aggregation. Therefore, step S12 appropriately lowers the mixing temperature compared to step S11 to avoid causing aggregation of inorganic nanoparticles.

[0064] The mass ratio of the inorganic nanoparticles to the ligand in the composition is 20:1 to 1:5. This mass ratio allows the inorganic nanoparticles to effectively bind magnetic particles without oversaturation.

[0065] In some optional embodiments of this example, the mass ratio of the inorganic nanoparticles to the ligand in the composition is any one or any two of the following: 20:1, 10:1, 5:1, 2:1, 4:3, 1:1, 1:2, 1:3, 1:4, 1:5, etc.

[0066] In some optional embodiments of this example, the inorganic nanomaterial and the ligand are the same as described above, and the first magnetic particle is the same as the magnetic particle described above, which will not be repeated here.

[0067] The above solution will be further explained below with reference to specific embodiments. The embodiments of the present invention are described in detail below:

[0068] Composition Example 1

[0069] The specific preparation steps of the composition provided in the embodiments of this application are as follows:

[0070] (1) Provide chlorobenzene as a solvent.

[0071] (2) The magnetic particles and ligands are added to the chlorobenzene and stirred at 100°C for 3 hours to obtain a first mixed solution containing precipitate, wherein the mass percentage of magnetic particles and ligands is 3:7, the magnetic particles are γ-Fe2O3 nanocrystals, and the ligands are ethanolamine.

[0072] (3) Obtain the precipitate in the first solution, add chlorobenzene to the precipitate, and disperse it to obtain a second mixed solution containing the precipitate.

[0073] (4) Add the inorganic nanoparticles to the second mixed solution and stir at 80°C for 1 hour to obtain the composition; wherein the mass percentage of inorganic nanoparticles to ligands is 1:1 and the inorganic nanoparticles are molybdenum oxide.

[0074] Composition Example 2

[0075] The only difference between this embodiment and Embodiment 1 is that:

[0076] In step (4), molybdenum oxide is replaced with nickel oxide.

[0077] Composition Example 3

[0078] The only difference between this embodiment and Embodiment 1 is that:

[0079] In step (2), ethanolamine is replaced with citric acid.

[0080] Composition Example 4

[0081] The only difference between this embodiment and Embodiment 1 is that:

[0082] In step (2), γ-Fe2O3 nanocrystals are replaced with MnFe2O4.

[0083] Comparative Example 1

[0084] The only difference between Comparative Example 1 and Example 1 is that:

[0085] In step (2), the mass percentage of magnetic particles to ligands is 0:1.

[0086] Comparative Example 2

[0087] The only difference between Comparative Example 2 and Example 1 is that:

[0088] In step (2), the mass percentage of magnetic particles to ligands is 1:0.

[0089] Comparative Example 3

[0090] The only difference between Comparative Example 3 and Example 1 is that:

[0091] Steps (2) and (3) were not performed;

[0092] The corresponding change in step (4) is: adding inorganic nanoparticles into chlorobenzene solvent.

[0093] Composition Example 5

[0094] (1) Provide chlorobenzene as a solvent.

[0095] (2) The magnetic particles and ligands are added to the chlorobenzene and stirred at 100°C for 6 hours to obtain a first mixed solution containing precipitate, wherein the mass percentage of magnetic particles and ligands is 35:65, the magnetic particles are γ-Fe2O3 nanocrystals, and the ligands are ethanolamine.

[0096] (3) Obtain the precipitate in the first solution, add chlorobenzene to the precipitate, and disperse it to obtain a second mixed solution containing the precipitate.

[0097] (4) Add the inorganic nanoparticles to the second mixed solution and stir at 80°C for 3 hours to obtain the composition; wherein the mass percentage of inorganic nanoparticles to ligands is 3:2 and the inorganic nanoparticles are zinc oxide.

[0098] Composition Example 6

[0099] The only difference between this embodiment and embodiment 5 is that:

[0100] In step (4), zinc oxide is replaced with tin oxide.

[0101] Composition Example 7

[0102] The only difference between this embodiment and embodiment 5 is that:

[0103] In step (2), ethanolamine is replaced with diethylenetriamine.

[0104] Composition Example 8

[0105] The only difference between this embodiment and embodiment 5 is that:

[0106] In step (2), γ-Fe2O3 nanocrystals are replaced with NiFe2O4.

[0107] Comparative Example 4

[0108] The only difference between Comparative Example 4 and Example 5 is:

[0109] In step (2), the mass percentage of magnetic particles to ligands is 0:1.

[0110] Comparative Example 5

[0111] The only difference between Comparative Example 5 and Example 5 is:

[0112] In step (2), the mass percentage of magnetic particles to ligands is 1:0.

[0113] Comparative Example 6

[0114] The only difference between Comparative Example 6 and Example 5 is that:

[0115] Steps (2) and (3) were not performed;

[0116] The corresponding change in step (4) is: adding inorganic nanoparticles into chlorobenzene solvent.

[0117] Analysis of film formation test results:

[0118] A rotational viscometer and a surface tension meter were used to test the viscosity and surface tension of compositions 1-8 and 1-6 at 25°C during film formation. Viscosity is measured in mPa, and surface tension in mN / m. The viscosity and surface tension of each composition example and comparative example during film formation are shown in Table 1.

[0119] Table 1

[0120]

[0121]

[0122] Since the viscosity index of the film is generally in the range of 2.0 mPa to 9.0 mPa and the surface tension index is generally in the range of 25 mN / m to 45 mN / m, it can be seen that the compositions provided in Examples 1-8 and Comparative Examples 1-6 meet the requirements of the film formation process as composite functional layer materials for optoelectronic devices.

[0123] This application also provides a thin film comprising the composite material described above, or the thin film prepared using the composition described above. In this embodiment, the composite material in the film layer can improve the uniformity of solute distribution in the film under the action of a magnetic field, thereby improving the film formation uniformity and thus improving the performance of the optoelectronic device.

[0124] This application also provides a method for preparing a thin film, such as... Figure 2 As shown, it includes the following steps:

[0125] S21. Provide the composition as described above;

[0126] S22. The composition is deposited to form the thin film in an environment with a magnetic field.

[0127] In this embodiment, the composition is deposited under a magnetic field to form the thin film. The composite material in the composition can be magnetized and move in the magnetic field, improving the uniformity of the composite material distribution in the thin film, thereby improving the performance of the optoelectronic device.

[0128] Furthermore, step S22 specifically includes:

[0129] The composition is formed into a liquid film on a carrier using a solution method;

[0130] The liquid film is dried to obtain the film.

[0131] In this embodiment, the order in which the magnetic field is applied to the liquid film is not limited. The magnetic field can be applied to the liquid film during its formation or during its drying. By applying a magnetic field to the liquid film, the composite material, as a solute in the liquid film, can be magnetized and move within the liquid film, thereby disrupting the concentration gradient distribution of the solute and resulting in a more uniform solute distribution. This improves the uniformity of film formation and ultimately enhances the performance of optoelectronic devices.

[0132] Furthermore, in the step of applying a magnetic field to the liquid film, the magnetic induction intensity of the magnetic field is 0.01T to 100T. In this embodiment, by reasonably setting the magnetic induction intensity of the magnetic field, the magnetization degree of the magnetic particles in the magnetic field can be improved, while ensuring the stability of the composite material's movement in the magnetic field.

[0133] In some optional embodiments of this example, the magnetic induction intensity of the magnetic field is within the range of any one or any two of 0.01T, 10T, 20T, 30T, 40T, 50T, 60T, 70T, 80T, 90T, 100T, etc.

[0134] In one specific embodiment, at least one pair of Helmholtz coils is provided, the liquid film is fixed between the Helmholtz coils, and the current flowing through each pair of Helmholtz coils is controlled to generate a magnetic field acting on the liquid film.

[0135] In one embodiment, the magnetic field is an alternating magnetic field, and the angle between the direction of the alternating magnetic field and the thin film plane is defined as θ, where 0°≤θ<90°. In some optional embodiments of this embodiment, θ is any one or any two of 0°, 10°, 20°, 30°, 40°, 50°, 60°, 70°, 80°, 89°, etc.

[0136] In one embodiment, the magnetic field is an alternating magnetic field with a frequency of 20Hz to 10000Hz. In some optional embodiments of this embodiment, the frequency is any one or any two of 20Hz, 100Hz, 1000Hz, 2000Hz, 4000Hz, 8000Hz, 10000Hz, etc.

[0137] In one embodiment, the magnetic field is an alternating magnetic field, and the waveform of the alternating magnetic field is at least one of a sine wave, a square wave, and a triangular wave.

[0138] In one embodiment, the magnetic field is a rotating magnetic field, and the angle between the rotation axis of the rotating magnetic field and the normal of the thin film is defined as γ, where 0°≤γ<90°. In some optional embodiments of this embodiment, γ is any one or any two of 0°, 10°, 20°, 30°, 40°, 50°, 60°, 70°, 80°, 89°, etc.

[0139] In one embodiment, the magnetic field is a rotating magnetic field, and the synchronous rotation speed of the rotating magnetic field is 100 rpm to 1,000,000 rpm; in some optional embodiments of this embodiment, the synchronous rotation speed is any one or any two of 100 rpm, 1,000 rpm, 10,000 rpm, 20,000 rpm, 40,000 rpm, 60,000 rpm, 80,000 rpm, 1,000,000 rpm, etc.

[0140] Furthermore, in the step of drying the liquid film, the drying temperature is 25℃~170℃ and the drying time is 1min~180min.

[0141] This application also provides an optoelectronic device, such as... Figure 3 As shown, the optoelectronic device includes a first electrode 1, a carrier functional layer, and a second electrode 5 stacked together. The carrier functional layer comprises multiple stacked functional sublayers, and at least one of these sublayers is a thin film as described above, or a thin film prepared using the method described above. In this embodiment, the composite material in the thin film has good uniformity of distribution, which can improve the carrier transport efficiency of the carrier functional layer and the performance of the optoelectronic device.

[0142] Furthermore, the plurality of said functional sublayers include an electronic functional layer 4 and a hole functional layer 2;

[0143] When the electronic functional layer 4 comprises a thin film as described above, or a thin film prepared using the method described above, the inorganic nanoparticles are selected from doped or undoped first metal oxides. The first metal oxide includes one or more of zinc oxide, barium oxide, aluminum oxide, titanium oxide, tin oxide, tantalum oxide, and zirconium oxide. The doped element includes at least one of aluminum, magnesium, lithium, manganese, yttrium, lanthanum, copper, nickel, zirconium, cerium, and gadolinium. The mass percentage of the doped element in the inorganic nanoparticles is 0.01% to 50%. The material of the hole functional layer 2 is selected from TFB, CuPc, PVK, and Po. Ly-TPD, PFB, DNTPD, TCATA, TCCA, CBP, TPD, NPB, NPD, PEDOT:PSS, T·APC, MCC, F4-TCNQ, HATCN, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, polyaniline, transition metal oxides, transition metal sulfides, transition metal tin compounds, doped graphene, undoped graphene, and C60, doped or undoped second metal oxides, wherein the second metal oxide includes one or more of vanadium oxide, molybdenum oxide, tungsten oxide, tantalum oxide, nickel oxide, and germanium oxide, wherein the doped element is at least one of aluminum, magnesium, lithium, manganese, yttrium, lanthanum, copper, nickel, zirconium, cerium, and gadolinium, and the mass percentage of the doped element in the second metal oxide is 0.01% to 50%; and / or

[0144] When the hole functional layer 2 comprises the thin film as described above, or the thin film prepared using the method described above, the inorganic nanoparticles are selected from doped or undoped second metal oxides. The second metal oxide includes one or more of vanadium oxide, molybdenum oxide, tungsten oxide, tantalum oxide, nickel oxide, and germanium oxide. The doped element is one or more of aluminum, magnesium, lithium, manganese, yttrium, lanthanum, copper, nickel, zirconium, cerium, and gadolinium. The mass percentage of the doped element in the inorganic nanoparticles is 0.01% to 50%. The material of the electronic functional layer 4 is selected from at least one of doped or undoped first metal oxides and organic electron transport materials. The doped or undoped first metal oxide is selected from at least one of doped or undoped zinc oxide, barium oxide, aluminum oxide, titanium oxide, tin oxide, tantalum oxide, and zirconium oxide. The doped element is at least one of aluminum, magnesium, lithium, manganese, yttrium, lanthanum, copper, nickel, zirconium, cerium, gadolinium, and tin. The mass percentage of the doped element in the first metal oxide is 0.01% to 50%.

[0145] When the electronic functional layer 4 and the hole functional layer 2 each independently comprise the thin film as described above, or the thin film prepared using the method described above, the inorganic nanoparticles in the electronic functional layer 4 are selected from doped or undoped first metal oxides. The first metal oxide includes one or more of zinc oxide, barium oxide, aluminum oxide, titanium oxide, tin oxide, tantalum oxide, and zirconium oxide. The doped element includes at least one of aluminum, magnesium, lithium, manganese, yttrium, lanthanum, copper, nickel, zirconium, cerium, and gadolinium. The mass percentage of the doped element in the inorganic nanoparticles is 0.01% to 50%. The inorganic nanoparticles in the hole functional layer 2 are selected from doped or undoped second metal oxides. The second metal oxide includes one or more of vanadium oxide, molybdenum oxide, tungsten oxide, tantalum oxide, nickel oxide, and germanium oxide. The doped element is one or more of aluminum, magnesium, lithium, manganese, yttrium, lanthanum, copper, nickel, zirconium, cerium, and gadolinium. The mass percentage of the doped element in the inorganic nanoparticles is 0.01% to 50%.

[0146] In some embodiments, the optoelectronic device further includes a light-emitting layer 3 disposed between the first electrode 1 and the second electrode 5, and an electronic functional layer 4 disposed between the second electrode 5 and the light-emitting layer 3.

[0147] Furthermore, the hole functional layer 2 is disposed between the first electrode 1 and the light-emitting layer 3.

[0148] Furthermore, the thickness of the electronic functional layer 4 is 5nm to 200nm. Specifically, the thickness of the electronic functional layer 4 is within the range of any one or any two of the following: 5nm, 20nm, 40nm, 60nm, 80nm, 100nm, 120nm, 140nm, 160nm, 180nm, and 200nm.

[0149] Furthermore, the thickness of the hole functional layer 2 is 5nm to 200nm. Specifically, the thickness of the hole functional layer 2 is within the range of any one or any two of the following: 5nm, 20nm, 40nm, 60nm, 80nm, 100nm, 120nm, 140nm, 160nm, 180nm, and 200nm.

[0150] Furthermore, the thickness of the first electrode 1 is 10nm to 1000nm. Specifically, the thickness of the first electrode 1 is within the range of any one or any two of the following: 10nm, 100nm, 200nm, 300nm, 400nm, 500nm, 600nm, 700nm, 800nm, 900nm, and 1000nm.

[0151] Furthermore, the thickness of the second electrode 5 is 10nm to 1000nm. Specifically, the thickness of the second electrode 5 is within the range of any one or any two of the following: 10nm, 100nm, 200nm, 300nm, 400nm, 500nm, 600nm, 700nm, 800nm, 900nm, and 1000nm.

[0152] Furthermore, the thickness of the light-emitting layer 3 is 5nm to 200nm. Specifically, the thickness of the light-emitting layer 3 is within the range of any one or any two of the following: 5nm, 20nm, 40nm, 60nm, 80nm, 100nm, 120nm, 140nm, 160nm, 180nm, and 200nm.

[0153] Furthermore, the first electrode 1 and the second electrode 5 are each selected from one or more of the following: metal electrode, silicon-carbon electrode, doped or undoped metal oxide electrode, and composite electrode; wherein, the material of the metal electrode is selected from at least one of Al, Ag, Cu, Mo, Au, Ba, Ca, and Mg; the material of the silicon-carbon electrode is selected from at least one of silicon, graphite, carbon nanotubes, graphene, and carbon fiber; the material of the doped or undoped metal oxide electrode is selected from at least one of I2O, FTO, ATO, AZO, GZO, I2O, MZO, and AMO; and the material of the composite electrode is selected from AZO / Ag / AZO, AZO / Al / AZO, I2O / Ag / I2O, I2O / Al / I2O, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, and TiO2 / Ag / TiO2. iO2 and at least one of TiO2 / Al / TiO2; and / or

[0154] The material of the light-emitting layer 3 includes at least one of organic light-emitting materials, single-structure quantum dots, and core-shell structure quantum dots. The organic light-emitting material is selected from one or more of the following: 4,4'-bis(N-carbazole)-1,1'-biphenyl:tris[2-(p-tolyl)pyridinium(III), 4,4',4”-tris(carbazole-9-yl)triphenylamine:tris[2-(p-tolyl)pyridinium, diaromatic anthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescence materials, TTA materials, TADF materials, thermally activated delayed materials, polymers containing BN covalent bonds, hybrid localized charge transfer excited-state materials, and excitocomplex light-emitting materials. The shell of the core-shell structure quantum dot includes one or more layers.The material of the single-structure quantum dot, the core material of the core-shell quantum dot, and the shell material of the core-shell quantum dot are each selected from at least one of group I-VI compounds, group I-V-VI compounds, group II-IV compounds, and group III-VI compounds, wherein group I Group I-VI compounds include one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe. Group V-VI compounds include one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe; Group II-IV compounds include GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAl One or more of PAs, GaAl PSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb, and at least one of Group III-VI compounds including CuInS2, CuInSe2, and AgInS2.

[0155] This application also provides a display device, which includes the optoelectronic device described above.

[0156] In some implementations, the display device can be any electronic product with display functionality, including but not limited to smartphones, tablets, laptops, digital cameras, digital camcorders, smart wearable devices, smart weighing scales, in-vehicle displays, televisions, or e-book readers. Among these, smart wearable devices can be, for example, smart bracelets, smartwatches, or virtual reality devices.

[0157] The above solution will be further described below with reference to specific embodiments. The preferred embodiments of this application are described in detail below:

[0158] Thin Film Example 1

[0159] This embodiment provides a method for preparing a thin film, including the following steps:

[0160] Step 1: Provide a composition, wherein the composition is the composition in Composition Example 1;

[0161] Step 2: Form a liquid film of the composition on a carrier using a solution method;

[0162] Step 3: Apply a magnetic field to the liquid film. The magnetic field is an alternating magnetic field with an angle of 45° between the direction of the alternating magnetic field and the surface of the liquid film. The magnetic induction intensity of the alternating magnetic field is 1 Tesla and the frequency is 5000 Hz.

[0163] Step 4: Dry the liquid film under a magnetic field at a temperature of 100°C for 10 minutes to obtain the film.

[0164] Thin Film Example 2

[0165] The difference from Thin Film Example 1 is that:

[0166] The composition in step 1 is the same as the composition in composition embodiment 2.

[0167] Thin Film Example 3

[0168] The difference from Thin Film Example 1 is that:

[0169] The composition in step 1 is the same as the composition in composition embodiment 3.

[0170] Thin Film Example 4

[0171] The difference from Thin Film Example 1 is that:

[0172] The composition in step 1 is the same as the composition in composition embodiment 4.

[0173] Thin Film Example 5

[0174] The difference from Thin Film Example 1 is that:

[0175] The composition in step 1 is the same as the composition in composition embodiment 5.

[0176] Thin Film Example 6

[0177] The difference from Thin Film Example 1 is that:

[0178] The composition in step 1 is the same as the composition in composition embodiment 6.

[0179] Thin Film Example 7

[0180] The difference from Thin Film Example 1 is that:

[0181] The composition in step 1 is the same as the composition in composition embodiment 7.

[0182] Thin Film Example 8

[0183] The difference from Thin Film Example 1 is that:

[0184] The composition in step 1 is the same as the composition in composition embodiment 8.

[0185] Thin Film Comparative Example 1

[0186] The difference from Thin Film Example 1 is that:

[0187] The composition in step 1 is the same as the composition in Comparative Example 1.

[0188] Thin Film Comparative Example 2

[0189] The difference from Thin Film Example 1 is that:

[0190] The composition in step 1 is the same as the composition in Comparative Example 2.

[0191] Thin Film Comparative Example 3

[0192] The difference from Thin Film Example 1 is that:

[0193] The composition in step 1 is the same as the composition in Comparative Example 3.

[0194] Thin film comparative example 4

[0195] The difference from Thin Film Example 1 is that:

[0196] The composition in step 1 is the same as the composition in Comparative Example 4.

[0197] Thin film comparative example 5

[0198] The difference from Thin Film Example 1 is that:

[0199] The composition in step 1 is the same as the composition in Comparative Example 5.

[0200] Thin Film Comparative Example 6

[0201] The difference from Thin Film Example 1 is that:

[0202] The composition in step 1 is the same as the composition in Comparative Example 6.

[0203] Experimental testing and analysis: The film uniformity and white light morphology of the films prepared in Thin Film Examples 1 to 8 and Thin Film Comparative Examples 1 to 6 were tested.

[0204] The white light morphology testing method is as follows: Using a BRUKER white light interferometer in VSI measurement mode, with a acquisition speed of 1X and a threshold of 10%, the morphology (height) information of the film surface within the pixel region of the device is acquired. The acquired data is then fitted using View64 Map Imaging Topography software to obtain the white light morphology map. In the white light morphology, light gray areas represent areas within the reference range, dark gray areas represent areas thicker than the reference line, and black areas represent areas thinner than the reference line.

[0205] The film uniformity test method was as follows: the above white light morphology image was processed using Visual64 Map Imaging Topography software. Specifically, the average film height of the entire pixel area was used as a reference value, and the area within ±5nm of this reference value was selected as the ideal area, i.e., the flat area of ​​the film (green). The area of ​​the flat area: the ratio of the area of ​​the entire film area is the film uniformity (U%) value. The larger the value, the better the uniformity and the flatter the film. This processing was all completed using Visual64 Map Imaging Topography software.

[0206] The test results are shown in Table 2.

[0207] Table 2

[0208]

[0209]

[0210]

[0211]

[0212] As shown in Table 2, the white light morphologies in Comparative Examples 1 and 3 all have thicker edges; the white light morphologies in Comparative Examples 2, 4, 5, and 6 also have thicker edges, with thinner sections interspersed in the light gray areas in the middle. This indicates that the film uniformity of Comparative Examples 1 to 6 is poor, and this uneven film formation leads to a decrease in the current efficiency and lifespan of the optoelectronic devices in Comparative Examples 1 to 8. The white light morphologies in Examples 1 to 8 are mostly light gray, with high surface flatness, indicating good film uniformity in Examples 1 to 8. This results in uniform light emission from the optoelectronic devices in Examples 1 to 8, and higher current efficiency and lifespan.

[0213] Optoelectronic device example 1:

[0214] This application provides a method for fabricating an optoelectronic device, the method of which is as follows:

[0215] Step 1: Provide an anode. The anode material is ITO, and the anode thickness is 50 nm.

[0216] Step 2: Prepare a liquid film on the anode using a solution method. The composition used to prepare the liquid film is the same as the composition in Example 1.

[0217] Step 3: Apply an external magnetic field to the liquid film and dry the liquid film under the external magnetic field to obtain a hole functional layer. The thickness of the hole functional layer is 26 nm, the magnetic induction intensity of the magnetic field is 1 Tesla, the drying temperature is 100 °C, and the drying time is 10 min.

[0218] Step 4: Form a light-emitting layer on the hole functional layer using inkjet printing. The material of the light-emitting layer is CdS / ZnSe quantum dots, and the thickness of the light-emitting layer is 40nm.

[0219] Step 5: An electronic functional layer is formed on the light-emitting layer by inkjet printing. The material of the electronic functional layer is ZnO, and the thickness of the electronic functional layer is 25nm.

[0220] Step 6: A cathode is formed on the electronic functional layer by vapor deposition to obtain an optoelectronic device. The cathode is made of Ag material and has a thickness of 110 nm.

[0221] Optoelectronic device Example 2

[0222] The difference from the optoelectronic device embodiment 1 is that:

[0223] The composition used in step 2 to prepare the liquid film is the same composition used in composition embodiment 2.

[0224] Optoelectronic device Example 3

[0225] The difference from the optoelectronic device embodiment 1 is that:

[0226] The composition used in step 2 to prepare the liquid film is the same as the composition in composition embodiment 3.

[0227] Optoelectronic device Example 4

[0228] The difference from the optoelectronic device embodiment 1 is that:

[0229] The composition used in step 2 to prepare the liquid film is the same as the composition in composition embodiment 4.

[0230] Optoelectronic device Example 5

[0231] This application provides a method for fabricating an optoelectronic device, the method of which is as follows:

[0232] Step 1: Provide an anode. The anode material is ITO, and the anode thickness is 50 nm.

[0233] Step 2: Prepare a hole functional layer on the first electrode using a solution method. The material of the hole functional layer is TFB, and the thickness of the hole functional layer is 26 nm.

[0234] Step 3: Form a light-emitting layer on the hole functional layer by inkjet printing. The material of the light-emitting layer is CdS / ZnSe quantum dots, and the thickness of the light-emitting layer is 40nm.

[0235] Step 4: Prepare a liquid film on the light-emitting layer using a solution method. The composition used to prepare the liquid film is the composition in Composition Example 5.

[0236] Step 5: Apply an external magnetic field to the liquid film and dry the liquid film under the external magnetic field to obtain an electronic functional layer. The thickness of the electronic functional layer is 25 nm, the magnetic induction intensity of the magnetic field is 0.8 Tesla, the drying temperature is 120 °C, and the drying time is 15 min.

[0237] Step 6: A cathode is formed on the electronic functional layer by vapor deposition to obtain an optoelectronic device. The cathode is made of Ag material and has a thickness of 110 nm.

[0238] Optoelectronic device Example 6

[0239] The difference from the optoelectronic device embodiment 5 is that:

[0240] The composition used in step 2 to prepare the liquid film is the same as the composition in composition embodiment 6.

[0241] Optoelectronic device Example 7

[0242] The difference from the optoelectronic device embodiment 5 is that:

[0243] The composition used in step 2 to prepare the liquid film is the same as the composition in composition embodiment 7.

[0244] Optoelectronic device Example 8

[0245] The difference from the optoelectronic device embodiment 5 is that:

[0246] The composition used in step 2 to prepare the liquid film is the same as the composition in composition embodiment 8.

[0247] Comparative Example 1 of Optoelectronic Devices

[0248] The difference from the optoelectronic device embodiment 1 is that:

[0249] The composition used in step 2 to prepare the liquid film is the same as the composition in Comparative Example 1.

[0250] Comparative Example 2 of Optoelectronic Devices

[0251] The difference from the optoelectronic device embodiment 1 is that:

[0252] The composition used in step 2 to prepare the liquid film is the same as the composition in Comparative Example 2.

[0253] Comparative Example 3 of Optoelectronic Devices

[0254] The difference from the optoelectronic device embodiment 1 is that:

[0255] The composition used in step 2 to prepare the liquid film is the same as the composition in Comparative Example 3.

[0256] Comparative Example 4 of Optoelectronic Devices

[0257] The difference from the optoelectronic device embodiment 5 is that:

[0258] The composition used in step 2 to prepare the liquid film is the same as the composition in Comparative Example 4.

[0259] Comparative Example 5 of Optoelectronic Devices

[0260] The difference from the optoelectronic device embodiment 5 is that:

[0261] The composition used in step 2 to prepare the liquid film is the same as the composition in Comparative Example 5.

[0262] Comparative Example 6 of Optoelectronic Devices

[0263] The difference from the optoelectronic device embodiment 5 is that:

[0264] The composition used in step 2 to prepare the liquid film is the same as the composition in Comparative Example 6.

[0265] Experimental testing and analysis: Current efficiency and lifespan were tested on the optoelectronic devices prepared in Examples 1 to 8 and Comparative Examples 1 to 6.

[0266] The method for testing current efficiency is as follows: The luminous area is set to 2mm × 2mm = 4mm. 2 The brightness values ​​of the optoelectronic device are intermittently collected within the driving voltage range of 0V to 8V. The initial voltage value for collecting the brightness is 0.5V, and the brightness value is collected every 0.2V. The current efficiency of the optoelectronic device under the current collection condition is obtained by dividing the brightness value collected each time by the corresponding current density.

[0267] The lifespan test method is as follows: Under constant current (2mA) drive, a 128-channel QLED lifespan test system is used to perform electroluminescence lifespan analysis on each optoelectronic device, record the time (T95,h) required for each optoelectronic device to decay from maximum brightness to 95%, and calculate the time (T95@1000nit,h) required for each optoelectronic device to decay from 100% brightness to 95% brightness at 1000nit using the decay fitting formula.

[0268] The test results are shown in Table 3.

[0269] Table 3

[0270]

[0271]

[0272] As shown in Table 3, the carrier functional layers prepared by using compositions containing magnetic particles, ligands, and inorganic nanoparticles in Examples 1 to 8 of this application exhibit improved film uniformity and enhanced device current efficiency and lifespan. Specifically, the magnetic particles, moving in a magnetic field, can drive the inorganic nanoparticles and ligands to move together. Using the composition as a solute, preparing a liquid film from the composition via a solution method and applying an external magnetic field to the liquid film can improve film uniformity, thereby enhancing the performance of the optoelectronic device. Furthermore, the ligands can tightly bridge the inorganic nanoparticles to the surface of the magnetic particles, and the close contact between the inorganic nanoparticles on the surface layer forms conductive channels, which can improve carrier mobility, thereby increasing the device's current efficiency and lifespan.

[0273] Obviously, the embodiments described above are only some embodiments of this application, not all embodiments. The accompanying drawings show preferred embodiments of this application, but do not limit the patent scope of this application. This application can be implemented in many different forms; rather, the purpose of providing these embodiments is to provide a more thorough and comprehensive understanding of the disclosure of this application. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing specific embodiments, or make equivalent substitutions for some of the technical features. Any equivalent structures made using the content of this application's specification and drawings, directly or indirectly applied to other related technical fields, are similarly within the scope of patent protection of this application.

Claims

1. A composite material, characterized by, The composite material comprises magnetic particles, ligands and inorganic nanoparticles, wherein the inorganic nanoparticles are connected to the magnetic particles through the ligands.

2. The composite material of claim 1, wherein, The structure of the ligand is R1-L-R2, L is a linking group, R1 is combined with the surface of the magnetic particles, and R2 is combined with the surface of the inorganic nanoparticles; R1 and R2 are independently selected from at least one of cyanide, hydroxyl, sulfonic acid, sulfhydryl, phosphoric acid group, phosphine group, amino group, carboxyl group, thiocyanate group and halogen atom; L is selected from a single bond, substituted or unsubstituted C1-C 12 alkylene or C2-C 12 alkenylene; when substituted, one or more hydrogen atoms of the C1-C 12 alkylene or C2-C 12 alkenylene are independently of each other substituted by at least one of a cyano group, a hydroxyl group, a sulfonic acid group, a mercapto group, a phosphoric acid group, a phosphine group, an amino group, a carboxyl group, a thiocyanato group and a halogen atom, and / or one -CH2- or at least two non-adjacent -CH2- of the C2-C 12 alkylene or C3-C 12 alkenylene are substituted by -O-, -S-, -NH-, -NR3-, or -C=C- in a manner that they are not directly connected to each other, wherein R3is C1-C5alkyl unsubstituted or substituted by at least one of a carboxyl group, a hydroxyl group, an amino group; and / or The magnetic particles are selected from at least one of iron single substance, iron oxide, iron alloy, cobalt single substance, cobalt oxide, cobalt alloy, nickel single substance, nickel oxide, nickel alloy; and / or The inorganic nanoparticles are selected from inorganic semiconductor materials; and / or The average particle size of the magnetic particles is 2nm-50nm; and / or The average particle size of the inorganic nanoparticles is 1nm-25nm; and / or The average particle size of the composite material is 5nm-100nm; and / or In the composite material, the mass ratio between the magnetic particles, the ligands and the inorganic nanoparticles is (5-30):(5-20):(50-90); and / or The saturation magnetization of the composite material is 5emu / g-200emu / g.

3. The composite material of claim 2, wherein, The magnetic particles are selected from at least one of Fe3O4, Fe2O3, NiO, CoO, FeCo, FeCr, MnFe2O4, FePt, CoFe2O4, ZnFe2O4, NiFe2O4; and / or The inorganic semiconductor material is selected from doped or non-doped metal oxides, the metal oxides include one or more of vanadium oxide, molybdenum oxide, tungsten oxide, tantalum oxide, nickel oxide, germanium oxide, zinc oxide, barium oxide, aluminum oxide, titanium oxide, tin oxide, tantalum oxide, zirconium oxide, the doping elements include at least one of aluminum, magnesium, lithium, manganese, yttrium, lanthanum, copper, nickel, zirconium, cerium, gadolinium, and the mass percentage of the doping elements in the inorganic nanoparticles is 0.01%-50%; and / or The ligands are selected from at least one of ethanolamine, citric acid, EDTA, 1,2-diaminocyclohexane, diethanolamine, triethanolamine, diethylenetriamine, triethylenetetramine, nitrilotriacetic acid, glutathione; and / or The magnetic particles have superparamagnetism, and the inorganic semiconductor material has diamagnetism.

4. A composition, characterized in that it comprises a solvent and the composite material according to any one of claims 1 to 3.

5. The composition according to claim 4, characterized in that the mass percentage of the solvent is 50%-95% and the mass percentage of the composite material is 5%-50% based on 100% of the total weight of the composition, and / or The viscosity of the composition at 10-30℃ is 1cP-40cP, and / or The surface tension of the composition at 10-30℃ is 10dynes / cm-50dynes / cm, and / or The surface tension of the composition at 10-30℃ is 10dynes / cm-50dynes / cm, and / or The solvent is selected from at least one of chlorobenzene, water, ethanol, methanol, acetone, isopropanol, toluene, hexane, chloroform, tetrahydrofuran, dimethyl sulfoxide, dimethyl formamide, ethyl acetate, cyclohexane, dichloromethane, acetonitrile, diethyl ether, N-methyl-2-pyrrolidone (NMP), propylene glycol, glycerol, carbon tetrachloride, butanol, pentane xylene, petroleum ether, dichloromethane, isopropyl acetate, 1,4-dioxane, propylene carbonate, ethyl lactate, dimethyl carbonate, phenetole, formamide, isopropanol, diisopropyl ether, methyl ethyl ketone, methyl isobutyl ketone, pyridine, triethylamine, 1,2-dichloroethane, 1,2-dichloropropane, benzyl acetate, butyl acetate, cyclopentane, decane, diethyl carbonate, diethylene glycol, diisobutyl ketone, dipropylene glycol.

6. A method of preparing a composition, characterized by, The method comprises the following steps: providing a mixture comprising a first magnetic particle, a ligand and a first solvent, the mixture is subjected to a first reaction to obtain a second magnetic particle, the second magnetic particle comprises the first magnetic particle with the ligand connected to the surface of the first magnetic particle; providing a second solvent and an inorganic nanoparticle, mixing the second magnetic particle, the second solvent and the inorganic nanoparticle to be subjected to a second reaction to obtain the composition.

7. The method of preparing a composition according to claim 6, wherein In the first reaction, the first reaction temperature is 30-120℃, the first reaction time is 1h-48h, and / or the mass ratio of the first magnetic particle to the ligand in the mixture is 1:(1-20); and / or In the second reaction, the second reaction temperature is 20-80℃, and / or the second reaction time is 1h-48h, and / or the mass ratio of the inorganic nanoparticle to the ligand in the composition is (20:1)-(1:5); and / or The structure of the ligand is R1-L-R2, L is a linking group, R1 is combined with the surface of the magnetic particle, and R2 is combined with the surface of the inorganic nanoparticle; R1 and R2 are independently selected from at least one of a cyano group, a hydroxyl group, a sulfonic acid group, a mercapto group, a phosphoric acid group, a phosphine group, an amino group, a carboxyl group, a thiocyanate group and a halogen atom; L is selected from a single bond, substituted or unsubstituted C1-C 12 alkylene or C2-C 12 alkenylene; when substituted, one or more hydrogen atoms of the C1-C 12 alkylene or C2-C 12 alkenylene are independently of each other substituted by at least one of a cyano group, a hydroxyl group, a sulfonic acid group, a mercapto group, a phosphoric acid group, a phosphine group, an amino group, a carboxyl group, a thiocyanato group and a halogen atom, and / or one -CH2- or at least two non-adjacent -CH2- of the C2-C 12 alkylene or C3-C 12 alkenylene are substituted by -O-, -S-, -NH-, -NR3-, or -C=C- in a manner that they are not directly connected to each other, wherein R3is C1-C5alkyl which is unsubstituted or substituted by at least one of a carboxyl group, a hydroxyl group, an amino group; and / or The magnetic particle is selected from at least one of iron single element, iron oxide, iron alloy, cobalt single element, cobalt oxide, cobalt alloy, nickel single element, nickel oxide, nickel alloy; and / or The inorganic nanoparticle is selected from an inorganic semiconductor material; and / or The average particle size of the magnetic particle is 2-50nm; and / or The average particle size of the inorganic nanoparticle is 1-25nm; and / or The magnetic particle is selected from at least one of Fe3O4, Fe2O3, NiO, CoO, FeCo, FeCr, MnFe2O4, FePt, CoFe2O4, ZnFe2O4, NiFe2O4; and / or the inorganic nanoparticles are selected from doped or non-doped metal oxides, the metal oxides include one or more of vanadium oxide, molybdenum oxide, tungsten oxide, tantalum oxide, nickel oxide, germanium oxide, zinc oxide, barium oxide, aluminum oxide, titanium oxide, tin oxide, tantalum oxide, zirconium oxide, the doping elements include at least one of aluminum, magnesium, lithium, manganese, yttrium, lanthanum, copper, nickel, zirconium, cerium, gadolinium, the mass percentage of the doping elements in the inorganic nanoparticles is 0.01% to 50%; and / or the ligand is selected from at least one of ethanolamine, citric acid, EDTA, 1,2-diaminocyclohexane, diethanolamine, triethanolamine, diethylenetriamine, triethylenetetramine, nitrilotriacetic acid, glutathione; and / or the first solvent and the second solvent are independently selected from at least one of chlorobenzene, water, ethanol, methanol, acetone, isopropanol, toluene, hexane, chloroform, tetrahydrofuran, dimethyl sulfoxide, dimethyl formamide, ethyl acetate, cyclohexane, dichloromethane, acetonitrile, diethyl ether, N-methyl-2-pyrrolidone (NMP), propylene glycol, glycerol, carbon tetrachloride, butanol, pentane xylene, petroleum ether, dichloromethane, isopropyl acetate, 1,4-dioxane, propylene carbonate, ethyl lactate, dimethyl carbonate, phenetole, formamide, isopropanol, diisopropyl ether, methyl ethyl ketone, methyl isobutyl ketone, pyridine, triethylamine, 1,2-dichloroethane, 1,2-dichloropropane, benzyl acetate, butyl acetate, cyclopentane, decane, diethyl carbonate, diethylene glycol, diisobutyl ketone, dipropylene glycol.

8. A film, characterized by, The thin film comprises the composite material according to any one of claims 1 to 3, or the thin film is prepared by using the composition according to any one of claims 4 to 5.

9. A method of producing a film, characterized by, Comprising the following steps: providing the composition according to any one of claims 4 to 5; depositing the composition to form the thin film in an environment with a magnetic field.

10. The method of claim 9, wherein the film is prepared by a method comprising: The magnetic induction intensity of the magnetic field is 0.01 to 100 T; and / or The magnetic field is an alternating magnetic field, the angle between the direction of the alternating magnetic field and the plane of the thin film is defined as θ, 0°≤θ<90°, and / or, the frequency of the alternating magnetic field is 20 Hz to 10000 Hz, and / or, the waveform of the alternating magnetic field is at least one of sine wave, square wave and triangular wave; and / or The magnetic field is a rotating magnetic field, the angle between the rotating axis of the rotating magnetic field and the normal of the thin film is defined as γ, 0°≤γ<90°, and / or, the synchronous rotating speed of the rotating magnetic field is 100 rpm to 1000000 rpm; and / or The step of depositing the composition to form the thin film specifically comprises: depositing the composition to form a liquid film, and drying the liquid film to obtain the thin film; optionally, the drying temperature is 25°C to 170°C, and / or, the drying time is 1 min to 180 min.

11. An optoelectronic device, characterized in that comprising a first electrode, a carrier functional layer and a second electrode arranged in a stack; The carrier functional layer comprises a plurality of functional sub-layers stacked together, at least one of the functional sub-layers is the thin film according to claim 8 or the thin film prepared by the method according to any one of claims 9-10.

12. The optoelectronic device of claim 11, wherein, The plurality of functional sub-layers comprises an electron functional layer and a hole functional layer; When the electron functional layer comprises the thin film according to claim 8 or the thin film prepared by the method according to any one of claims 9-10, the inorganic nanoparticles are selected from doped or undoped first metal oxides, the first metal oxides comprise one or more of zinc oxide, barium oxide, aluminum oxide, titanium oxide, tin oxide, tantalum oxide, zirconium oxide, the doping elements comprise at least one of aluminum, magnesium, lithium, manganese, yttrium, lanthanum, copper, nickel, zirconium, cerium, gadolinium, and the mass percentage of the doping elements in the inorganic nanoparticles is 0.01%-50%; the material of the hole functional layer is selected from at least one of TFB, CuPc, PVK, Poly-TPD, PFB, DNTPD, TCATA, TCCA, CBP, TPD, NPB, NPD, PEDOT:PSS, T·APC, MCC, F4-TCNQ, HATCN, 4,4',4'-tris(N-3-methylphenyl-N phenyl amino) triphenylamine, polyaniline, transition metal oxide, transition metal sulfide, transition metal tin, doped graphene, undoped graphene, C60, doped or undoped second metal oxides, the second metal oxides comprise one or more of vanadium oxide, molybdenum oxide, tungsten oxide, tantalum oxide, nickel oxide, germanium oxide, the doping elements comprise one or more of at least one of aluminum, magnesium, lithium, manganese, yttrium, lanthanum, copper, nickel, zirconium, cerium, gadolinium, and the mass percentage of the doping elements in the second metal oxides is 0.01%-50%; and / or When the hole functional layer comprises the thin film as claimed in claim 8, or the thin film prepared by the preparation method of any one of claims 9 to 10, the inorganic nanoparticles are selected from doped or undoped second metal oxides, the second metal oxides comprising one or more of vanadium oxide, molybdenum oxide, tungsten oxide, tantalum oxide, nickel oxide, germanium oxide, wherein the doping element is at least one of aluminum, magnesium, lithium, manganese, yttrium, lanthanum, copper, nickel, zirconium, cerium, gadolinium, and the mass percentage of the doping element in the inorganic nanoparticles is 0.01% to 50%; the material of the electron functional layer is selected from at least one of doped or undoped first metal oxides, organic electron transport materials; the doped or undoped first metal oxides are selected from at least one of doped or undoped zinc oxide, barium oxide, aluminum oxide, titanium oxide, tin oxide, tantalum oxide, zirconium oxide, the doping element is at least one of aluminum, magnesium, lithium, manganese, yttrium, lanthanum, copper, nickel, zirconium, cerium, gadolinium, and the mass percentage of the doping element in the first metal oxides is 0.01% to 50%; and / or When the electron functional layer and the hole functional layer each independently comprise the thin film as claimed in claim 8, or the thin film prepared by the preparation method of any one of claims 9 to 10, the inorganic nanoparticles in the electron functional layer are selected from doped or undoped first metal oxides, the first metal oxides comprising one or more of zinc oxide, barium oxide, aluminum oxide, titanium oxide, tin oxide, tantalum oxide, zirconium oxide, the doping element is at least one of aluminum, magnesium, lithium, manganese, yttrium, lanthanum, copper, nickel, zirconium, cerium, gadolinium, and the mass percentage of the doping element in the inorganic nanoparticles is 0.01% to 50%, the inorganic nanoparticles in the hole functional layer are selected from doped or undoped second metal oxides, the second metal oxides comprising one or more of vanadium oxide, molybdenum oxide, tungsten oxide, tantalum oxide, nickel oxide, germanium oxide, wherein the doping element is one or more of aluminum, magnesium, lithium, manganese, yttrium, lanthanum, copper, nickel, zirconium, cerium, gadolinium, and the mass percentage of the doping element in the inorganic nanoparticles is 0.01% to 50%.

13. The optoelectronic device of claim 12, wherein, The optoelectronic device further comprises a light-emitting layer, the light-emitting layer being disposed between the first electrode and the second electrode; The electron functional layer is disposed between the second electrode and the light-emitting layer; and / or The hole functional layer is disposed between the first electrode and the light-emitting layer; and / or The thickness of the electron functional layer is 5 nm to 200 nm; and / or The thickness of the hole functional layer is 5 nm to 200 nm; and / or The first electrode and the second electrode are each selected from one or more of a metal electrode, a silicon-carbon electrode, a doped or undoped metal oxide electrode, and a composite electrode; wherein the material of the metal electrode is selected from at least one of Al, Ag, Cu, Mo, Au, Ba, Ca, and Mg; the material of the silicon-carbon electrode is selected from at least one of silicon, graphite, carbon nanotube, graphene, and carbon fiber; the material of the doped or undoped metal oxide electrode is selected from at least one of ITO, FTO, ATO, AZO, GZO, IZO, MZO, and AMO; the material of the composite electrode is selected from at least one of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2, and TiO2 / Al / TiO2; and / or The material of the light-emitting layer includes at least one of an organic light-emitting material, a single-structure quantum dot, and a core-shell structure quantum dot, the organic light-emitting material is selected from one or more of 4,4'-bis(N-carbazole)-1,1'-biphenyl: tris[2-(p-tolyl)pyridine complex of iridium (III), 4,4',4"-tris(carbazole-9-yl)triphenylamine: tris[2-(p-tolyl)pyridine complex of iridium, a diaryl anthracene derivative, a stilbene aromatic derivative, a pyrene derivative, a fluorene derivative, a TBPe fluorescent material, a TTPX fluorescent material, a TBRb fluorescent material, a DBP fluorescent material, a delayed fluorescent material, a TTA material, a TADF material, a thermally activated delayed material, a polymer containing a covalently bonded B-N, a hybrid local charge transfer excited state material, and an exciplex light-emitting material; and the shell of the core-shell structure quantum dot includes one or more layers.The material of the single-structure quantum dot, the core material of the core-shell structure quantum dot and the shell material of the core-shell structure quantum dot are respectively selected from at least one of II-VI compounds, IV-VI compounds, III-V compounds and I-III-VI compounds, wherein the II-VI compounds include one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe, the IV-VI compounds include one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe and SnPbSTe, the III-V compounds include one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb, and the I-III-VI compounds include at least one of CuInS2, CuInSe2 and AgInS2.

14. A display device comprising: The display device comprises the optoelectronic device of any one of claims 11 to 13.

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