Organic light-emitting element and manufacturing method thereof

Abstract

An organic light-emitting device includes a substrate, a first bottom electrode, an organic light-emitting layer structure, a first top electrode, and a second top electrode. The first bottom electrode is on the substrate. The organic light-emitting layer structure is located on the first bottom electrode. The first top electrode and the second top electrode are located on the organic light emitting layer structure. The extension direction of the first top electrode and the second top electrode is substantially perpendicular to the extension direction of the first bottom electrode, and the first top electrode and the second top electrode are separated from each other.

Description

Technical Field

[0001] This disclosure relates to an organic light-emitting element and a method for fabricating the same, particularly to an organic light-emitting element comprising an organic light-emitting diode (OLED) structure and a method for fabricating the same. Background Technology

[0002] Currently, the fine metal mask (FMM) is commonly used for the coating of the light-emitting layer of organic light-emitting elements, or a white light source with a color filter is used in the process. However, the pixel sharpness or resolution produced by the above processes is not good. Summary of the Invention

[0003] In this disclosure, an organic light-emitting element includes a substrate, a first bottom electrode, an organic light-emitting layer structure, a first top electrode, and a second top electrode. The first bottom electrode is located on the substrate. The organic light-emitting layer structure is located on the first bottom electrode. The first top electrode and the second top electrode are located on the organic light-emitting layer structure. The extending directions of the first top electrode and the second top electrode are substantially perpendicular to the extending direction of the first bottom electrode, and the first top electrode and the second top electrode are spaced apart from each other.

[0004] In this disclosure, a method for fabricating an organic light-emitting element includes: providing a substrate; disposing a first bottom electrode on the substrate; forming a blocking strip structure on the substrate, wherein the blocking strip structure includes a first blocking strip and a second blocking strip located on the first blocking strip; forming an organic light-emitting layer structure on the first bottom electrode and the blocking structure; and forming a top electrode material layer above the blocking structure and the substrate, such that the top electrode material layer is cut off by the second blocking strip to form a first top electrode and a second top electrode separated from each other.

[0005] In some embodiments, the organic light-emitting element further includes a pixel defining layer located on a substrate, wherein a first top electrode, a second top electrode, and a partial upper surface of the pixel defining layer define a groove, and the first top electrode and the second top electrode are separated by the groove.

[0006] In some embodiments, the first top electrode extends partially onto the pixel definition layer, and the thickness of the first top electrode gradually decreases toward the second top electrode.

[0007] In some embodiments, the end of the first top electrode extends onto the pixel definition layer and includes an upwardly extending protrusion.

[0008] In some embodiments, the organic light-emitting element further includes a capping layer that covers the first top electrode and the second top electrode and extends partially into the groove.

[0009] In some embodiments, the organic light-emitting element further includes a blocking strip structure located on the substrate, and the first top electrode and the second top electrode are separated by the blocking strip structure.

[0010] In some embodiments, the blocking strip structure further includes a first blocking strip and a second blocking strip. The first blocking strip is located between the first top electrode and the second top electrode, and the second blocking strip is located on the first blocking strip, with the width of the second blocking strip being greater than the width of the first blocking strip.

[0011] In some embodiments, the sidewall of the first blocking strip is recessed relative to the sidewall of the second blocking strip.

[0012] In some embodiments, the sidewall of the first blocking strip includes a concave surface.

[0013] In some embodiments, the organic light-emitting element further includes an electrode material layer located on the upper surface and sidewalls of the blocking strip structure and separated from the first top electrode and the second top electrode.

[0014] In some embodiments, the electrode material layer includes an extension that is located on the sidewall of the blocking strip structure and tapers toward the substrate.

[0015] In some embodiments, the extension directions of the first top electrode and the second top electrode are generally parallel to the extension direction of the blocking strip structure.

[0016] In some embodiments, the organic light-emitting structure includes a first organic light-emitting layer and a second organic light-emitting layer. The first organic light-emitting layer is located between a first bottom electrode and a first top electrode, and the second organic light-emitting layer is located between the first bottom electrode and a second top electrode, wherein the first organic light-emitting layer and the second organic light-emitting layer are separated by a blocking strip structure.

[0017] In some embodiments, the organic light-emitting structure includes a first organic light-emitting layer, a second organic light-emitting layer, and an organic material layer. A first top electrode and a second top electrode are respectively located on the first organic light-emitting layer and the second organic light-emitting layer, and the organic material layer is located on the blocking strip structure and is separated from the first organic light-emitting layer and the second organic light-emitting layer.

[0018] In some embodiments, the organic light-emitting element further includes a pixel definition layer located on the substrate and between the first top electrode and the second top electrode, wherein the blocking strip structure is located on the pixel definition layer.

[0019] In some embodiments, the method of fabricating an organic light-emitting element further includes: forming a pixel definition layer on a substrate and partially covering a first bottom electrode; and forming a blocking strip structure on the pixel definition layer, wherein the top electrode material layer is cut off by the height difference between the second blocking strip and the pixel definition layer.

[0020] In some embodiments, forming the blocking strip structure includes: forming a blocking material layer on a pixel definition layer; forming a second blocking strip on the blocking material layer; and etching the blocking material layer according to a pattern of the second blocking strip to form a first blocking strip, and causing the sidewall of the first blocking strip to be recessed relative to the sidewall of the second blocking strip.

[0021] In some embodiments, the method of fabricating an organic light-emitting element further includes: removing the blocking strip structure to form a groove defined by a first top electrode, a second top electrode, and a local upper surface of a pixel definition layer.

[0022] In some embodiments, the method of fabricating an organic light-emitting element further includes: forming a capping layer over a first top electrode and a second top electrode and extending partially into a groove. Attached Figure Description

[0023] Figure 1 This is a top view illustrating the intermediate products of an organic light-emitting element.

[0024] Figure 2A Here is a cross-sectional view of an organic light-emitting element.

[0025] Figure 2B Here is a cross-sectional view of an organic light-emitting element as an example.

[0026] Figure 2C Here is a cross-sectional view of an organic light-emitting element.

[0027] Figure 2D Here is a cross-sectional view of an organic light-emitting element.

[0028] Figure 2E Here is a cross-sectional view of an organic light-emitting element.

[0029] Figure 3A Here is a cross-sectional view of an organic light-emitting element.

[0030] Figure 3B Here is a cross-sectional view of an organic light-emitting element.

[0031] Figures 4A to 4D The illustration depicts a method for fabricating an organic light-emitting element according to some embodiments.

[0032] Figures 5A to 5C The illustration depicts a method for fabricating an organic light-emitting element according to some embodiments. Detailed Implementation

[0033] Figure 1This is a top view illustrating an intermediate product of an organic light-emitting element 10. The organic light-emitting element 10 may include a light-emitting layer 20 and a capping layer 40 located above the light-emitting layer 20. For the light-emitting layer 20, spacer structures 30 may be designed to provide an array of recesses for accommodating an array of light-emitting pixels. In some embodiments, the spacer structure 30 serves as a pixel-defined layer (PDL). In some embodiments, the spacer structure 30 may include bumps 310. In some embodiments, the bumps 310 define pixel regions. In some embodiments, the spacer structure 30 may include a photosensitizing material.

[0034] like Figure 1 As shown, the organic light-emitting element 10 may further include an electrode 215 (or bottom electrode) and an electrode 216 (or top electrode). In some embodiments, electrode 215 is an anode, and electrode 216 is an anode. In some embodiments, the organic light-emitting element 10 may include a plurality of electrodes 215 and a plurality of electrodes 216, such as electrodes 215a, 215b and electrodes 216a, 216b. In some embodiments, the extension direction DR2 of electrode 215 is generally perpendicular to the extension direction DR1 of electrode 216. The organic light-emitting element 10 may further include a blocking strip structure 710. In some embodiments, the extension direction DR1 of electrode 216 is generally parallel to the extension direction DR1 of blocking strip structure 710. In some embodiments, the extension direction DR2 of electrode 215 is generally perpendicular to the extension direction DR1 of blocking strip structure 710.

[0035] Figure 2A A cross-sectional view of an organic light-emitting element 10A is shown as an example. In some embodiments, Figure 2A For example, along Figure 1 A cross-sectional view of line A-A' in some embodiments. Figure 2A For example, along Figure 1 The diagram shows a cross-sectional view along line A-A', illustrating only the light-emitting area. The spacer structure 30 has several protrusions 310 to define the light-emitting pixel pattern. Recesses are located between two adjacent protrusions 310 and provide space to accommodate the light-emitting pixels. Those skilled in the art will understand from... Figure 2A From the cross-sectional view, protrusion 310 is drawn as a broken section, but from... Figure 1 As can be seen from the top view, they can be connected to each other via other parts of the spacer structure 30.

[0036] like Figure 2AAs shown, in some embodiments, the organic light-emitting element 10 is, for example, a light-emitting element comprising an organic light-emitting diode (OLED) structure. In some embodiments, the organic light-emitting element 10 comprises a plurality of organic light-emitting units (or light-emitting pixels), for example, comprising at least organic light-emitting unit 101 (or first organic light-emitting unit) and organic light-emitting unit 102 (or second organic light-emitting unit). In some embodiments, organic light-emitting units 101 and 102 are located between bumps 310 and above substrate 100. Organic light-emitting units 101 and 102 may emit light of the same wavelength or light of different wavelengths.

[0037] In some embodiments, the organic light-emitting element 10 includes a substrate 100, an electrode 215a (or a first bottom electrode), an electrode 216a (or a first top electrode), an electrode 216b (or a second top electrode), an electrode material layer 2161, an organic light-emitting layer structure 20A, a spacer structure 30 (or a pixel definition layer), and a cover layer 40.

[0038] In some embodiments, substrate 100 may include a transistor array configured to correspond to light-emitting pixels in light-emitting layer 20. Substrate 100 may include a plurality of capacitors. In some embodiments, more than one transistor is configured to form a circuit with a capacitor and a light-emitting pixel. In some embodiments, substrate 100 may include glass.

[0039] In some embodiments, the organic light-emitting layer structure 20A is located on the electrode 215. In some embodiments, the organic light-emitting layer structure 20A includes a light-emitting layer 20 and an organic material layer 2601. In some embodiments, the light-emitting layer 20 includes an organic light-emitting layer 260A (or a first organic light-emitting layer) and an organic light-emitting layer 260B (or a second organic light-emitting layer).

[0040] In some embodiments, electrode 215a is located on substrate 100. In some embodiments, electrode 215a is an anode. In some embodiments, electrode 215a comprises a metallic material, such as Ag, Al, Mg, Au, AlCu alloy, AgMo alloy, etc. In some embodiments, electrode 215a comprises indium tin oxide (ITO), indium zinc oxide (IZO), or other suitable materials. In some embodiments, organic light-emitting layer 260A and organic light-emitting layer 260B are located on electrode 215a.

[0041] In some embodiments, electrodes 216a and 216b are located on organic light-emitting layer structure 20A. In some embodiments, electrode 216a is located on organic light-emitting layer 260A, and electrode 216b is located on organic light-emitting layer 260B. In some embodiments, electrode 216a is in contact with organic light-emitting layer 260A, and electrode 216b is in contact with organic light-emitting layer 260B. In some embodiments, electrodes 216a and 216b may be further located on spacer structure 30 (or pixel definition layer). In some embodiments, electrodes 216a and 216b comprise a metallic material, such as Ag, Al, Mg, Au, AlCu alloy, AgMo alloy, etc. In some embodiments, electrodes 216a and 216b comprise ITO, IZO, or other suitable materials.

[0042] In some embodiments, the blocking strip structure 710 is located on the substrate 10. In some embodiments, electrodes 216a and 216b are separated by the blocking strip structure 710. In some embodiments, electrodes 216a and 216b are electrically isolated or electrically insulated from each other by the blocking strip structure 710. In some embodiments, the thickness of the blocking strip structure 710 is equal to or greater than 1 μm, for example, 1 μm to 4 μm or 2 μm to 3 μm. In some embodiments, the thickness of the blocking strip structure 710 is greater than the thickness of electrode 216. In some embodiments, the thickness of the blocking strip structure 710 is more than 10 times the thickness of electrode 216, for example, 20 to 30 times. In some embodiments, the blocking strip structure 710 may contain a photosensitive material. In some embodiments, the blocking strip structure 710 may contain an inorganic oxide, such as silicon oxide, silicon nitride, or silicon oxynitride.

[0043] In some embodiments, the blocking strip structure 710 includes blocking strip 710A and blocking strip 710B. In some embodiments, blocking strip 710B (or referred to as the first blocking strip) is located between electrode 216a and electrode 216b, blocking strip 710A (or referred to as the second blocking strip) is located on blocking strip 710B, and the width of blocking strip 710A is greater than the width of blocking strip 710B. In some embodiments, the sidewall 710B1 of blocking strip 710B is recessed relative to the sidewall 710A1 of blocking strip 710A. In some embodiments, the sidewall 710B1 of blocking strip 710B includes a concave curved surface. In some embodiments, blocking strip 710A and blocking strip 710B contain different materials. In some embodiments, blocking strip 710A and blocking strip 710B may contain different photosensitive materials, for example, blocking strip 710A and blocking strip 710B may contain different photoresist materials. In some embodiments, the blocking strips 710A and 710B may contain different inorganic oxides, such as silicon oxide for blocking strip 710A and silicon oxynitride for blocking strip 710B.

[0044] In some embodiments, electrode material layer 2161 is located on the upper surface and sidewalls of the blocking strip structure 710, and is separated from electrodes 216a and 216b. In some embodiments, electrode material layer 2161 is located on the upper surface and sidewall 710A1 of the blocking strip 710A. In some embodiments, electrode material layer 2161 includes an extension located on the sidewall of the blocking strip structure 710 and tapering toward the substrate 100. In some embodiments, the extension of electrode material layer 2161 is located on the sidewall 710A1 of the blocking strip 710A and tapering toward the substrate 100. In some embodiments, electrode material layer 2161 includes two extensions located on two opposite sidewalls 710A1 of the blocking strip 710A, and the extension lengths of the two extensions may be the same or different. For example, the extension length L3 of one extension of electrode material layer 2161 is greater than the extension length L4 of the other extension.

[0045] In some embodiments, organic light-emitting layer 260A is located between electrode 215a and electrode 216a, and organic light-emitting layer 260B is located between electrode 215a and electrode 216b. In some embodiments, organic light-emitting layers 260A and 260B are separated by a blocking strip structure 710. In some embodiments, the thickness of the blocking strip structure 710 is greater than the thickness of organic light-emitting layers 260A and 260B. In some embodiments, the thickness of the blocking strip structure 710 is more than 10 times the thickness of organic light-emitting layers 260A and 260B, for example, 10 to 20 times. In some embodiments, organic light-emitting layers 260A and 260B emit light of the same or different colors. In some embodiments, the emission wavelength of organic light-emitting layer 260A is the same as that of organic light-emitting layer 260B. In some embodiments, the emission wavelength of organic light-emitting layer 260B is greater than that of organic light-emitting layer 260A.

[0046] In some embodiments, organic light-emitting layers 260A and 260B and organic material layer 2601 comprise organic material, which may be disposed in any of the material layers of organic light-emitting layers 260A and 260B and organic material layer 2601, depending on the implementation. In some embodiments, the organic material has an absorption rate of greater than or equal to 50% for a specific wavelength. In some embodiments, the organic material has an absorption rate of greater than or equal to 60% for a specific wavelength. In some embodiments, the organic material has an absorption rate of greater than or equal to 70% for a specific wavelength. In some embodiments, the organic material has an absorption rate of greater than or equal to 80% for a specific wavelength. In some embodiments, the organic material has an absorption rate of greater than or equal to 90% for a specific wavelength. In some embodiments, the organic material has an absorption rate of greater than or equal to 95% for a specific wavelength. In some embodiments, the specific wavelength is not greater than 400 nm. In some embodiments, the specific wavelength is not greater than 350 nm. In some embodiments, the specific wavelength is not greater than 300 nm. In some embodiments, the specific wavelength is not greater than 250 nm. In some embodiments, the specific wavelength is not greater than 200 nm. In some embodiments, the specific wavelength is not greater than 150 nm. In some embodiments, the specific wavelength is no greater than 100 nm.

[0047] like Figure 2A As shown, in some embodiments, organic light-emitting layers 260A and 260B and organic material layer 2601 each comprise multiple material layers, such as a hole injection layer (HIL) 261, a hole transport layer (HTL) 262, an electron blocking layer (EBL) 263, an organic emission layer (EM) 264, an electron transport layer (ETL) 265, and an electron injection layer (EIL) 266. In some embodiments, organic light-emitting unit 101 comprises an electrode 215a (or a first bottom electrode), organic light-emitting layer 260A, and electrode 216a (or a first top electrode). In some embodiments, organic light-emitting unit 102 comprises an electrode 215a (or a first bottom electrode), organic light-emitting layer 260B, and electrode 216b (or a second top electrode).

[0048] In some embodiments, an organic material layer 2601 is located on the blocking strip structure 710. In some embodiments, the organic material layer 2601 comprises an organic material. In some embodiments, an electrode material layer 2161 is located on the blocking strip structure 710. In some embodiments, the organic material layer 2601 is separated from the organic light-emitting layers 260A and 260B. In some embodiments, the material of the organic material layer 2601 is the same as the material of the organic light-emitting layers 260A and 260B.

[0049] In some embodiments, the organic material layer 2601 includes an extension located on the sidewall of the blocking strip structure 710 and tapering toward the substrate 100. In some embodiments, the extension of the organic material layer 2601 is located on the sidewall 710A1 of the blocking strip 710A and tapering toward the substrate 100. In some embodiments, the organic material layer 2601 includes two extensions located on two opposite sidewalls 710A1 of the blocking strip 710A, and the extension lengths of the two extensions may be the same or different. For example, the extension length L1 of one extension of the organic material layer 2601 is greater than the extension length L2 of the other extension.

[0050] In some embodiments, the organic material layer 2601 includes a hole injection layer (HIL) 261, a hole transport layer (HTL) 262, an electron blocking layer (EBL) 263, an organic emission layer (EM) 264, an electron transport layer (ETL) 265, and an electron injection layer (EIL) 266. In some embodiments, each of the hole injection layer (HIL) 261, hole transport layer (HTL) 262, electron blocking layer (EBL) 263, organic emission layer (EM) 264, electron transport layer (ETL) 265, and electron injection layer (EIL) 266 of the organic material layer 2601 includes two extensions located on two opposite sidewalls 710A1 of the blocking strip 710A. In some embodiments, the extension portions of the hole injection layer (HIL) 261, hole transport layer (HTL) 262, electron blocking layer (EBL) 263, organic emission layer (EM) 264, electron transport layer (ETL) 265 and electron injection layer (EIL) 266 of the organic material layer 2601 may have the same or different extension lengths.

[0051] In some embodiments, the spacer structure 30 is located on the substrate 100 and partially covers the electrode 215a. In some embodiments, the spacer structure 30 is located between organic light-emitting layers 260A and 260B. In some embodiments, the spacer structure 30 is located between electrodes 216a and 216b. In some embodiments, the pattern of the spacer structure 30 is designed according to a pixel arrangement. In some embodiments, the spacer structure 30 serves as a pixel defined layer (PDL). In some embodiments, the spacer structure 30 may include bumps 310. In some embodiments, the bumps 310 define pixel regions. In some embodiments, the electrode 215a is partially covered by the bumps 310.

[0052] In some embodiments, the blocking strip structure 710 is located on the spacer structure 30 (or pixel definition layer). In some embodiments, the thickness of the blocking strip structure 710 is 0.2 to 2 times or 0.3 to 1.2 times the thickness of the spacer structure 30 (or pixel definition layer). In some embodiments, the widths of both blocking strips 710A and 710B are smaller than the width of the bump 310. In some embodiments, the thickness of the spacer structure 30 is equal to or greater than 0.5 μm, for example, 0.5 μm to 2 μm or 0.6 μm to 1 μm.

[0053] In some embodiments, a partial surface of the spacer structure 30 (or pixel definition layer), the sidewall 710B1 of the blocking strip 710B, and the end of the electrode 216a define a space S1. In some embodiments, the electrode 216a and the blocking strip 710B are spaced apart from each other through the space S1. In some embodiments, a partial surface of the spacer structure 30 (or pixel definition layer), the sidewall 710B1 of the blocking strip 710B, and the end of the electrode 216b define a space S1. In some embodiments, the electrode 216b and the blocking strip 710B are spaced apart from each other through the space S1. In some embodiments, the electrode 216a and the electrode 216b are spaced apart from each other through the blocking strip 710B and the space S1.

[0054] In some embodiments, the spacer structure 30 (or pixel definition layer) comprises an organic insulating material. In some embodiments, the spacer structure 30 comprises a photosensitive material. In some embodiments, the spacer structure 30 may further comprise quantum dots, which have excellent light absorption performance. In some embodiments, the spacer structure 30 may further comprise a carbon black material, such as carbon black nanoparticles, carbon black-containing conductive fibers, or the like. In some embodiments, the spacer structure 30 may further comprise a blackbody material having an absorption rate of 90%, 95%, 99%, 99.5%, or 99.9% or higher for visible light.

[0055] In some embodiments, the spacer structure 30 has an absorption rate of 50% or greater than or equal to 50% for a specific wavelength. In some embodiments, the spacer structure 30 has an absorption rate of 60% or greater than or equal to 60% for a specific wavelength. In some embodiments, the spacer structure 30 has an absorption rate of 70% or greater than or equal to 70% for a specific wavelength. In some embodiments, the spacer structure 30 has an absorption rate of 80% or greater than or equal to 80% for a specific wavelength. In some embodiments, the spacer structure 30 has an absorption rate of 90% or greater than or equal to 95% for a specific wavelength. In some embodiments, the specific wavelength is not greater than 400 nm. In some embodiments, the specific wavelength is not greater than 350 nm. In some embodiments, the specific wavelength is not greater than 300 nm. In some embodiments, the specific wavelength is not greater than 250 nm. In some embodiments, the specific wavelength is not greater than 200 nm. In some embodiments, the specific wavelength is not greater than 150 nm. In some embodiments, the specific wavelength is not greater than 100 nm.

[0056] In some embodiments, the capping layer 40 includes a capping layer 410 and an encapsulation layer 420. In some embodiments, the capping layer 410 is disposed on the electrodes 216a, 216b and the blocking strip structure 710, and is substantially conformal to the non-planar upper surfaces of the electrodes 216a, 216b and the blocking strip structure 710. In some embodiments, the capping layer 410 is located in or fills the space S1. The capping layer 410 may contain a dielectric material or an inorganic insulating material, such as silicon oxide. In some embodiments, the capping layer 410 may contain a hole transport layer material for extracting light lost inside the organic light-emitting element to increase luminous efficiency. The capping layer 410 may also be referred to as a light extraction layer.

[0057] In some embodiments, the encapsulation layer 420 is disposed on the capping layer 410 and is substantially conformally oriented to the non-planar upper surface of the capping layer 410. The encapsulation layer 420 may comprise an oxide, such as silicon oxide. In some embodiments, the encapsulation layer 420 is substantially conformally oriented to the non-planar upper surface of the capping layer 410 and has a plurality of recesses corresponding to the organic light-emitting layers 260A and 260B. In some embodiments, the encapsulation layer 420 is located in or fills a space S1. In some embodiments, the encapsulation layer 420 further comprises a void G1. In some embodiments, the void G1 is located in the space S1. In some embodiments, electrodes 216a and 216b are separated from each other by the blocking strip 710B and the capping layer 410, encapsulation layer 420, and void G1 in the space S1. The encapsulation layer 420 may comprise a polymeric organic material, such as an epoxy-based material.

[0058] According to some embodiments disclosed herein, multiple electrodes 216 are separated from each other by a blocking strip structure 710 and intersect perpendicularly with multiple electrodes 215 in multiple light-emitting units (or light-emitting pixels). The height difference provided by the blocking strip structure 710 allows the multiple electrodes 216 to be physically separated, eliminating the need for photolithography etching processes to pattern the electrode material to form multiple separated electrodes 216. This simplifies the manufacturing process of the electrodes 216, enabling individual control of multiple light-emitting units (or light-emitting pixels) to illuminate individually, allowing the organic light-emitting element 10 to display various predetermined light-emitting patterns. For example, when the organic light-emitting element 10 is used in a aiming device, it can be designed according to ballistics to present a multi-point display image.

[0059] Furthermore, according to some embodiments disclosed herein, the height difference provided by the blocking strip structure 710 allows multiple electrodes 216 to be physically separated, thereby reducing or preventing damage to the organic light-emitting layers 260A and 260B below the electrodes 216 from the etching process, thereby improving the reliability and process yield of the organic light-emitting element 10.

[0060] Furthermore, according to some embodiments disclosed herein, the sidewall 710B1 of the blocking strip 710B is recessed relative to the sidewall 710A1 of the blocking strip 710A, making it difficult for the entire electrode material layer to be formed on the recessed sidewall 710B1. Therefore, the blocking strip structure 710 can more effectively disconnect the multiple electrodes 216 from each other.

[0061] Furthermore, according to some embodiments disclosed herein, electrodes 216a and 216b are separated from each other by the blocking strip 710B and the cover layer 410, encapsulation layer 420, and gap G1 in space S1. By separating electrodes 216a and 216b from each other through the multilayer structure of the cover layer 410, encapsulation layer 420, and gap G1 and multiple heterogeneous interfaces, electrodes 216a and 216b can be electrically isolated or electrically insulated from each other more effectively, effectively avoiding possible short circuits.

[0062] Furthermore, according to some embodiments disclosed herein, organic light-emitting layer 260A and organic light-emitting layer 260B are separated by a blocking strip structure 710. This eliminates the need for photolithography etching processes to pattern the organic light-emitting material to form multiple separated organic light-emitting layers. Therefore, the manufacturing process for the organic light-emitting layers can be simplified.

[0063] Figure 2B A cross-sectional view of an organic light-emitting element 10B is shown as an example. In some embodiments, Figure 2B For example Figure 1 A cross-sectional view of the organic light-emitting element 10. In some embodiments, Figure 2B For example, along Figure 1A cross-sectional view of line A-A' in some embodiments. Figure 2B For example, along Figure 1 The cross-sectional view of line A-A' is shown, and only the luminescent area is illustrated. Figure 2B Structure and Figure 2A The structures are similar, but the differences are as follows.

[0064] In some embodiments, electrodes 216a and 216b extend below the blocking strip structure 710. In some embodiments, electrodes 216a and 216b extend below the blocking strip 710A. In some embodiments, electrodes 216a and 216b extend to and contact the concave sidewall 710B1 of the blocking strip 710B.

[0065] According to some embodiments disclosed herein, electrodes 216a and 216b extend to and contact the concave sidewall 710B1 of the blocking strip 710B. The inner curved surface design of the sidewall 710B1 increases the volume of the space S1 below the blocking strip 710A, thus allowing more portions of the structure of electrodes 216a and 216b to be formed therein through vapor deposition. In this way, the inner curved surface design of the sidewall 710B1 of the blocking strip 710B further effectively separates the electrode material layer, and more thoroughly physically separates the multiple electrodes 216. Therefore, it effectively avoids short circuits between adjacent light-emitting units (or light-emitting pixels), preventing single-point lighting failure.

[0066] Figure 2C A cross-sectional view of an organic light-emitting element 10C is shown as an example. In some embodiments, Figure 2C For example Figure 1 A cross-sectional view of the organic light-emitting element 10. In some embodiments, Figure 2C For example, along Figure 1 A cross-sectional view of line A-A' in some embodiments. Figure 2C For example, along Figure 1 The cross-sectional view of line A-A' is shown, and only the luminescent area is illustrated. Figure 2C Structure and Figure 2A The structures are similar, but the differences are as follows.

[0067] In some embodiments, the protrusions 310 of the spacer structure 30 (or pixel definition layer) have grooves 310r1 and 310r2. In some embodiments, the grooves 310r1 and 310r2 are located on both sides of the blocking strip 710B and are respectively connected to the space S1 above it.

[0068] According to some embodiments disclosed herein, the design of the grooves 310r1 and 310r2 and their connection to the space S1 increases the overall volume of the space below the blocking strip 710A, thereby further increasing the step height generated by the blocking strip structure 710. In this way, by further increasing the step height design, the electrode material layer can be broken more effectively, and the multiple electrodes 216 can be physically separated more thoroughly.

[0069] Figure 2D A cross-sectional view of an organic light-emitting element 10D is shown as an example. In some embodiments, Figure 2D For example Figure 1 A cross-sectional view of the organic light-emitting element 10. In some embodiments, Figure 2D For example, along Figure 1 A cross-sectional view of line A-A' in some embodiments. Figure 2D For example, along Figure 1 The cross-sectional view of line A-A' is shown, and only the luminescent area is illustrated. Figure 2D Structure and Figure 2A The structures are similar, but the differences are as follows.

[0070] In some embodiments, electrodes 216a and 216b extend into grooves 310r1 and 310r2 below the blocking strip 710A.

[0071] According to some embodiments disclosed herein, electrodes 216a and 216b further extend into grooves 310r1 and 310r2. Through the design of grooves 310r1 and 310r2 and their connection to space S1, the overall space volume below the blocking strip 710A is increased, thus allowing more portions of the structure of electrodes 216a and 216b to be formed therein through vapor deposition. In this way, the increased overall space volume below the blocking strip 710A further effectively separates the electrode material layer, and more thoroughly physically separates multiple electrodes 216. Therefore, it effectively avoids short circuits between adjacent light-emitting units (or light-emitting pixels), preventing single-point lighting failure.

[0072] Figure 2E A cross-sectional view of an organic light-emitting element 10 is shown as an example. In some embodiments, Figure 2E For example, along Figure 1 A cross-sectional view of line E-E' in some embodiments. Figure 2E For example, along Figure 1 The cross-sectional view of line E-E' is shown, and only the luminescent area is illustrated.

[0073] In some embodiments, electrodes 215a and 215b are spaced apart from each other through spacer structure 30 (or pixel definition layer). In some embodiments, electrodes 215a and 215b are spaced apart from each other and the blocking strip structure 710 through spacer structure 30 (or pixel definition layer). In some embodiments, electrodes 215a and 215b are spaced apart from blocking strips 710A and 710B.

[0074] Figure 3A A cross-sectional view of an organic light-emitting element 10E is shown as an example. In some embodiments, Figure 3A For example Figure 1 A cross-sectional view of the organic light-emitting element 10. In some embodiments, Figure 3A For example, along Figure 1 A cross-sectional view of line A-A' in some embodiments. Figure 3A For example, along Figure 1 The cross-sectional view of line A-A' is shown, and only the luminescent area is illustrated. Figure 3A Structure and Figure 2A The structures are similar, but the differences are as follows.

[0075] In some embodiments, a recess S2 is defined on a portion of the upper surface of the electrode 216a, the electrode 216b, and the spacer structure 30 (or the pixel definition layer). In some embodiments, the electrode 216a and the electrode 216b are separated by the recess S2. In some embodiments, the electrode 216a extends partially onto the bump 310 (or the pixel definition layer), and the thickness of the electrode 216a gradually decreases toward the electrode 216b. In some embodiments, the electrode 216b extends partially onto the bump 310 (or the pixel definition layer), and the thickness of the electrode 216b gradually decreases toward the electrode 216a.

[0076] In some embodiments, the capping layer 410 covers electrodes 216a and 216b and extends partially into the recess S2. In some embodiments, the encapsulation layer 420 covers electrodes 216a and 216b and extends partially into the recess S2.

[0077] According to some embodiments disclosed herein, multiple electrodes 216 are spaced apart from each other via grooves S2. In this way, there is no blocking strip structure 710 above the bump 310 (or pixel definition layer), and the capping layer 410 and encapsulation layer 420 can be formed on a relatively flat surface. Therefore, the capping layer 410 has fewer stress concentration points, making it less susceptible to damage, and the overall size of the organic light-emitting element 10E can be further reduced.

[0078] Figure 3B A cross-sectional view of an organic light-emitting element 10F is shown as an example. In some embodiments, Figure 3B For example Figure 1A cross-sectional view of the organic light-emitting element 10. In some embodiments, Figure 3B For example, along Figure 1 A cross-sectional view of line A-A' in some embodiments. Figure 3B For example, along Figure 1 The cross-sectional view of line A-A' is shown, and only the luminescent area is illustrated. Figure 3B Structure and Figure 2A The structures are similar, but the differences are as follows.

[0079] In some embodiments, the end of electrode 216 extends onto bump 310 (or pixel definition layer) and includes an upwardly extending protrusion 216p. In some embodiments, the end of organic light-emitting layer 260A extends onto bump 310 (or pixel definition layer) and includes a plurality of upwardly extending protrusions. In some embodiments, the plurality of protrusions of organic light-emitting layer 260A partially overlap in the vertical direction. In some embodiments, capping layer 410 includes protrusion 410p located above protrusion 216p.

[0080] In some embodiments, the hole injection layer (HIL) 261 extends to the bump 310 (or pixel definition layer) and includes an upwardly extending protrusion 261p. In some embodiments, the hole transport layer (HTL) 262 extends to the bump 310 (or pixel definition layer) and includes an upwardly extending protrusion 262p. In some embodiments, the electron blocking layer (EBL) 263 extends to the bump 310 (or pixel definition layer) and includes an upwardly extending protrusion 263p. In some embodiments, the organic emitter layer (EM) 264 extends to the bump 310 (or pixel definition layer) and includes an upwardly extending protrusion 264p. In some embodiments, the electron transport layer (ETL) 265 extends to the bump 310 (or pixel definition layer) and includes an upwardly extending protrusion 265p. In some embodiments, the electron injection layer (EIL) 266 extends to the bump 310 (or pixel definition layer) and includes an upwardly extending protrusion 266p. In some embodiments, the height of the protrusions in each layer is less than the thickness of the layer.

[0081] Figures 4A to 4D A method for fabricating an organic light-emitting element 10A according to some embodiments is illustrated.

[0082] like Figure 4A As shown, in some embodiments, a substrate 100 is provided, on which electrodes 215a are disposed, and a plurality of bumps 310 (or spacer structures 30) are formed on the electrodes 215a. In some embodiments, a plurality of electrodes 215 are disposed on the substrate 100 (see Figure 100). Figure 1The spacer structure 30 is formed on a plurality of electrodes 215. The plurality of electrodes 215 can be fabricated using a photolithography etching process. Next, in some embodiments, a blocking material layer 710B' is formed on the electrodes 215 and the bumps 310 (or pixel definition layer), and a blocking strip 710A is formed on the blocking material layer 710B' using a photolithography etching process. In some embodiments, the blocking strip 710A and the blocking material layer 710B' may contain different photosensitive materials; for example, the blocking strip 710A and the blocking material layer 710B' may contain different photoresist materials.

[0083] like Figure 4B As shown, in some embodiments, the blocking material layer 710B' is etched according to the pattern of the blocking strip 710A to form the blocking strip 710B, and the sidewall 710B1 of the blocking strip 710B is recessed relative to the sidewall 710A1 of the blocking strip 710A. In some embodiments, the blocking material layer 710B' is etched by a wet etching step, such that the sidewall 710B1 of the blocking strip 710B has an undercut structure. In some embodiments, the blocking material layer 710B' is etched by a wet etching step, such that the sidewall 710B1 of the blocking strip 710B has a concave curved surface. Thus, the blocking strip structure 710 is formed.

[0084] like Figure 4C As shown, in some embodiments, an organic light-emitting layer structure 20A and an electrode material layer 2161 are formed on the spacer structure 30, the electrode 215a and the blocking strip structure 710.

[0085] In some embodiments, an electrode material layer is formed over the blocking strip structure 710 and the substrate 100, and the electrode material layer is cut off by the blocking structure 70 to form electrodes 216a and 216b that are separated from each other. In some embodiments, an entire electrode material layer is formed on the spacer structure 30, the electrode 215a and the blocking strip structure 710 by evaporation, and the entire electrode material layer is cut off by the blocking strip structure 710 to form electrodes 216a and 216b that are separated from each other and an electrode material layer 2161 remaining on the blocking strip structure 710.

[0086] In some embodiments, an organic light-emitting material layer is formed over the blocking strip structure 710 and the substrate 100, and the organic light-emitting material layer is cut off by the blocking structure 70 to form organic light-emitting layers 260A and 260B that are separated from each other. In some embodiments, an organic light-emitting material layer is formed over the entire surface of the spacer structure 30, the electrode 215a, and the blocking strip structure 710 by evaporation, and the organic light-emitting material layer is cut off by the blocking strip structure 710 to form organic light-emitting layers 260A and 260B that are separated from each other, as well as an organic material layer 2601 remaining on the blocking strip structure 710. Thus, organic light-emitting units 101 and 102 are formed.

[0087] In some embodiments, a hole injection layer (HIL) 261 is formed on the surfaces of the spacer structure 30, the electrode 215a, and the blocking strip structure 710; a hole transport layer (HTL) 262 is formed on the hole injection layer (HIL) 261; an electron blocking layer (EBL) 263 is formed on the hole transport layer (HTL) 262; an organic emission layer (EM) 264 is formed on the electron blocking layer (EBL) 263; an electron transport layer (ETL) 265 is formed on the organic emission layer (EM) 264; and an electron injection layer (EIL) 266 is formed on the electron transport layer (ETL) 265. In some embodiments, the hole injection layer (HIL) 261, the hole transport layer (HTL) 262, the electron blocking layer (EBL) 263, the organic emission layer (EM) 264, the electron transport layer (ETL) 265, and the electron injection layer (EIL) 266 are formed by evaporation.

[0088] like Figure 4D As shown, in some embodiments, a capping layer 410 is provided on electrodes 216a and 216b. In some embodiments, the capping layer 410 is formed by evaporation. Next, in some embodiments, an encapsulation layer 420 is provided on the capping layer 410. In some embodiments, the capping layer 410 is formed by evaporation. Thus, a layer is formed as shown... Figure 2A The organic light-emitting element 10A is shown.

[0089] Figures 5A to 5C A method for fabricating an organic light-emitting element 10E according to some embodiments is illustrated.

[0090] like Figure 5A As shown, in some embodiments, the following is performed: Figures 4A to 4C The steps shown are to form as follows Figure 4C The structure shown.

[0091] like Figure 5BAs shown, in some embodiments, the blocking strip structure 710 is removed to form a groove S2 defined by the electrode 216a, electrode 216b, and the partial upper surface of the bump 310 (or pixel definition layer). In some embodiments, the blocking strip structure 710 is removed via a lift-off process.

[0092] like Figure 5C As shown, in some embodiments, a capping layer 410 is provided on electrodes 216a and 216b. In some embodiments, the capping layer 410 is formed by evaporation. In some embodiments, the capping layer 410 is formed above electrodes 216a and 216b and extends partially into the groove S2. Next, in some embodiments, an encapsulation layer 420 is provided on the capping layer 410. In some embodiments, the capping layer 410 is formed by evaporation. Thus, a layer is formed as shown. Figure 3A The organic light-emitting element 10E is shown.

[0093] According to some embodiments disclosed herein, removing the blocking strip structure 710 can significantly reduce the surface height difference of the overall structure, improve the surface uniformity of the overall structure, and allow the cover layer 410 and the encapsulation layer 420 to be formed on a relatively flat surface. Therefore, the cover layer 410 has fewer stress concentration points, making it less susceptible to damage, and the overall size of the organic light-emitting element 10E can be further reduced.

[0094] In some embodiments, referencing Figure 5A , Figure 5B and Figure 3B Electrodes 216a and 216b are formed as a contact blocking strip structure 710. When the blocking strip structure 710 is removed, electrodes 216a and 216b are stretched to form protrusions 216p. In some embodiments, reference is also made to... Figure 5A , Figure 5B and Figure 3B Organic light-emitting layers 260A and 260B are formed as a contact blocking strip structure 710. When the blocking strip structure 710 is removed, organic light-emitting layers 260A and 260B are stretched, forming multiple protrusions. Next, a cover layer 410 and an encapsulation layer 420 can be provided to form a structure as follows: Figure 3B The organic light-emitting element 10F is shown.

[0095] The foregoing outlines some features of the embodiments, thus enabling those skilled in the art to better understand various aspects of this disclosure. Those skilled in the art should understand that this disclosure can be readily used as a basis for designing or modifying other processes and structures to achieve the same purpose and / or the same advantages as the embodiments described in this application. Those skilled in the art should also understand that this equivalent architecture does not depart from the spirit and scope of this disclosure, and that various changes, substitutions, and replacements can be made without departing from the spirit and scope of this disclosure.

[0096] Symbol Explanation

[0097] 10 Organic light-emitting elements

[0098] 10A Organic Light Emitting Device

[0099] 10B Organic Light Emitting Device

[0100] 10C Organic Light Emitting Device

[0101] 10D Organic Light Emitting Device

[0102] 10E Organic Light Emitting Device

[0103] 10F organic light-emitting element

[0104] 20 Organic light-emitting layer

[0105] 30 Spacer Structure

[0106] 40 Covering layer

[0107] 100 substrates

[0108] 101 Organic Light Emitting Unit

[0109] 102 Organic Light Emitting Units

[0110] 215 electrode

[0111] 215a electrode

[0112] 215b electrode

[0113] 216 electrode

[0114] 216a electrode

[0115] 216b electrode

[0116] 2161 Electrode Material Layer

[0117] 260A Organic Light Emitting Layer

[0118] 260B Organic Light Emitting Layer

[0119] 2601 Organic Material Layer

[0120] 261 Hole Injection Layer

[0121] 262 Hole Transport Layer

[0122] 263 Electron blocking layer

[0123] 264 Organic Emitting Layer

[0124] 265 Electron Transport Layer

[0125] 266 Electron Injection Layer

[0126] 310 bump

[0127] 310r1 Groove

[0128] 310r2 groove

[0129] 410 cap layer

[0130] 420 encapsulation layer

[0131] 710 Blocking Strip Structure

[0132] 710A Blocking Strip

[0133] 710B Blocking Strip

[0134] 710B' Barrier Material Layer

[0135] A-A' line

[0136] E-E' line

[0137] DR1 extension direction

[0138] DR2 extension direction

[0139] S1 Space

[0140] S2 groove

[0141] G1 gap.

Claims

1. An organic light-emitting element, comprising: substrate; A first bottom electrode is located on the substrate; An organic light-emitting layer structure is located on the first bottom electrode; as well as A first top electrode and a second top electrode are located on the organic light-emitting layer structure, wherein the extension directions of the first top electrode and the second top electrode are substantially perpendicular to the extension direction of the first bottom electrode, and the first top electrode and the second top electrode are separated from each other.

2. The organic light-emitting element as claimed in claim 1, further comprising: A pixel definition layer is located on the substrate, wherein the first top electrode, the second top electrode, and a portion of the upper surface of the pixel definition layer define a groove, and the first top electrode and the second top electrode are separated by the groove.

3. The organic light-emitting element of claim 2, wherein the first top electrode extends partially onto the pixel definition layer, and the thickness of the first top electrode gradually decreases toward the second top electrode.

4. The organic light-emitting element of claim 2, wherein the end of the first top electrode extends onto the pixel definition layer and includes an upwardly extending protrusion.

5. The organic light-emitting element as claimed in claim 2, further comprising: A capping layer that covers the first top electrode and the second top electrode and extends partially into the groove.

6. The organic light-emitting element as claimed in claim 1, further comprising: A blocking strip structure is located on the substrate, and the first top electrode and the second top electrode are separated by the blocking strip structure.

7. The organic light-emitting element of claim 6, wherein the blocking strip structure comprises: A first blocking strip is located between the first top electrode and the second top electrode; as well as A second blocking strip is located on top of the first blocking strip, and the width of the second blocking strip is greater than the width of the first blocking strip.

8. The organic light-emitting element of claim 7, wherein the sidewall of the first blocking strip is recessed relative to the sidewall of the second blocking strip.

9. The organic light-emitting element of claim 7, wherein the sidewall of the first blocking strip includes a concave surface.

10. The organic light-emitting element of claim 6, further comprising: An electrode material layer is located on the upper surface and sidewalls of the blocking strip structure and is separated from the first top electrode and the second top electrode.

11. The organic light-emitting element of claim 10, wherein the electrode material layer includes an extension located on the sidewall of the blocking strip structure and tapering toward the substrate.

12. The organic light-emitting element of claim 6, wherein the extension directions of the first top electrode and the second top electrode are substantially parallel to the extension direction of the blocking strip structure.

13. The organic light-emitting element of claim 6, wherein the organic light-emitting layer structure comprises: A first organic light-emitting layer is located between the first bottom electrode and the first top electrode; as well as A second organic light-emitting layer is located between the first bottom electrode and the second top electrode, wherein the first organic light-emitting layer and the second organic light-emitting layer are separated by the blocking strip structure.

14. The organic light-emitting element of claim 6, wherein the organic light-emitting layer structure comprises: A first organic light-emitting layer and a second organic light-emitting layer, wherein the first top electrode and the second top electrode are respectively located on the first organic light-emitting layer and the second organic light-emitting layer; as well as An organic material layer is located on the blocking strip structure and is separated from the first organic light-emitting layer and the second organic light-emitting layer.

15. The organic light-emitting element of claim 6, further comprising: A pixel definition layer is located on the substrate and between the first top electrode and the second top electrode, wherein the blocking strip structure is located on the pixel definition layer.

16. A method for fabricating an organic light-emitting element, comprising: Provide substrate; A first bottom electrode is disposed on the substrate; An obstruction strip structure is formed on the substrate, wherein the obstruction strip structure includes a first obstruction strip and a second obstruction strip located on the first obstruction strip; An organic light-emitting layer structure is formed on the first bottom electrode and the blocking structure; and A top electrode material layer is formed above the blocking structure and the substrate, and the top electrode material layer is cut off by the second blocking strip to form a first top electrode and a second top electrode that are separated from each other.

17. The manufacturing method as described in claim 16, further comprising: A pixel definition layer is formed on the substrate and partially covers the first bottom electrode; as well as The blocking strip structure is formed on the pixel definition layer, wherein the top electrode material layer is cut off through the height difference between the second blocking strip and the pixel definition layer.

18. The manufacturing method of claim 17, wherein forming the blocking strip structure comprises: A blocking material layer is formed on the pixel definition layer; The second blocking strip is formed on the blocking material layer; as well as The blocking material layer is etched according to the pattern of the second blocking strip to form the first blocking strip, and the sidewall of the first blocking strip is recessed relative to the sidewall of the second blocking strip.

19. The manufacturing method as described in claim 17, further comprising: Remove the blocking strip structure to form a groove defined by the first top electrode, the second top electrode, and a local upper surface of the pixel definition layer.

20. The manufacturing method as described in claim 19, further comprising: A capping layer is formed over the first and second top electrodes and extends partially into the groove.

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